PREVIO 6 Y 7 DISPO

UNIVERSIDAD NACIONAL MAYOR DE SAN MARCOS Universidad del Perú, decana de américa.

ACUL!AD DE IN"ENIERIA ELEC!RONICA, ELEC!RICA Y !ELECOMUNICACIONES.

•

Nombres y Apellidos:

Matricula:

Quispe Reyes Nelson.

14190245

Curso:

Tema:

Dispositivos Electrónicos.

Transistores PNP y NPN.

Informe:

Fechas:

PREV!

Numero:

Nota:

Realización:

Entrea:

1"# $e $e%rero ero #2 #2014

25#$e% $e%rero#2015

01

!rupo:

"rofesor:

&rupo'" # Viernes 11a.(.''2p.(.

n). *u+s Paretto Q.

FIEE UNMSM

PREVIO DEL E#PERIMEN!O N$ %& !A'LA ( Para) P*+%- Re+%- Rc+*/ - R *+0& - R (+((1  2 3n 4ransis45r PNP 'D*6. Por ,ato ya -ue el transistor PNP D1"/ est eco ,e silici5 entonces su

V'E7ac4iva8+ %.&v , V'E73m9ral8+ %.0v, V'E7c5r4e8+ %.%v 2 :+&%. Rb=

R1 × R2

V =

R 1+ R 2

Rb=

56 K × 22 K

V =

( 56 + 22) K

Rb=15.79487 kΩ

R2 × V CC R1 + R2 × (−12) ( 56 + 22) K

22 K

V =−3.38461 v

3a%e(os

allan,o %

I b=

V −V BE I b= Rb + ( β + 1 ) ℜ

−3.384 + 0.6 15.79487 × 10 + ( 60 + 1 ) 330 3

I9+;<<.0*(%=*>

Ic = I b × β

3e sa%e -ue Ic =−77.512041 µ A × 60

Ic+;

Ta(%i6n se sa%e V e =ℜ × Ic

Ve +;

FIEE UNMSM

V e =330 × (− 4.649703 m )

V ce=V CC −( R e + R C ) I C V ce =−12−( 330 + 1000 )(− 4.649703 m A ) VCE +;

!A'LA  Para) P*+%- Re+%- Rc+*/ - R *+&6 - R (+((1  2 3n 4ransis45r PNP 'D*6. Rb=

R1 × R2

V =

R 1+ R 2

Rb=

68 K × 22 K

V =

( 68 +22) K

Rb=16.6222 kΩ

R2 × V CC R1 + R2 × (−12) ( 68 + 22) K

22 K

V =−2.93333 v

3a%e(os allan,o %

I b=

V −V BE I b= Rb + ( β + 1 ) ℜ

−2.933 v + 0.6 16.6222 × 10 + ( 60 + 1 ) 330 3

I9+;

Ic = I b × β

3e sa%e -ue Ic =−63.488223 µA × 60

Ic+;

FIEE UNMSM

V e =ℜ × Ic

Ta(%i6n se sa%e

V e =330 × (−3.809293 m A )

Ve +;

V ce=V CC −( R e + R C ) I C V ce =−12−( 330 + 1000 )(−3.809293 m A )

VCE +;

!A'LA 0 PARA) P*+*%%1- Re+%- R c+*/ - R*+&6 - R (+((1  2 3n

4ransis45r PNP 'D*6. 3a%e(os Rb=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

V =

2

( 68 + 100 ) K × 22 K ( 68+ 100 + 22) K

Rb=19.452631 kΩ

allan,o %

I b=

V =

R2 ×V CC R1 + P1+ R 2

(−12 ) ( 68 + 100 +22) k 22 k ×

V =−1.3894736 v

V −V BE I b= Rb + ( β + 1 ) ℜ

−1.3894736 + 0.6 19.452631 × 10 + ( 60 + 1 ) 330 3

I9+;*?.?==?0

Ic = I b × β

3e sa%e -ue

Ic+;

FIEE UNMSM

Ic =−19.94495 µ A × 60

V ce=V CC −( R e + R C ) I C

Ta(%i6n se sa%e

V ce =−12−( 330 + 1000 )(−1.19669 m A )

VCE +;

PARA) P*+*%%1- Re+%- R c+*/ - R*+&6 - R (+((1  2 3n

4ransis45r PNP 'D*6.

( R + P )× R Rb= R + P + R Rb=

1

1

1

1

2

V =

2

( 68 + 250 ) K × 22 K ( 68+ 250 + 22 ) K

Rb= 20.57647059 k Ω

V =

R2 ×V CC

3a%e(os

R1 + P1+ R 2

×(−12 ) ( 68 + 250 + 22) K 22 K

V =−0.7764705 v

allan,o % V −V BE I b= Rb + ( β + 1 ) ℜ

−0.7764705 + 0.6 20.57647058 × 10 + ( 60+ 1 ) 330 3

I9+;

FIEE UNMSM

Ic = I b × β

3e sa%e -ue Ic =−43.64098 µ × 60

Ic+;


Ta(%i6n se sa%e

V ce =−12−( 330 + 1000 )(− 0.2618459 m A )

VCE +;

Para) P*+0%%1- Re+% - R c+*/ - R*+&6 - R(+((1  2 3n 4ransis45r PNP 'D*6. 3a%e(os

Rb=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

2

( 68 + 500 ) K × 22 K ( 68+ 500 + 22) K

Rb= 21.17966101 k Ω

allan,o % I b=

I b=

V −V BE ( corte ) Rb + ( β + 1 ) ℜ

−0.44745762 −0.0 21.17966101 × 10 + ( 60 + 1 ) 330 3

V = V =

R2 ×V CC R1 + P1+ R 2

(−12 ) ( 68 + 500 +22) K 22 K ×

V =−0.44745762 v

FIEE UNMSM

I9+;

Ic = I b × β

3e sa%e -ue Ic =−10.83179 μ A × 60

Ic+;


Ta(%i6n se sa%e

V ce =−12−( 330 + 1000 )(− 0.649907 m A )

VCE +;

Para) P*+*M - Re+% - R c+*/ - R*+&6 - R(+((1  2 3n 4ransis45r PNP 'D*6.

Rb=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

2

( 68 +1000 ) K × 22 K ( 68 + 1000 + 22) K

Rb= 21.5559633 k Ω

allan,o %

I b=

V =

V −V BE ( corte ) Rb + ( β + 1 ) ℜ

V =

R2 ×V CC R1 + P1+ R 2

(−12 ) ( 68 + 1000 + 22) K 22 K ×

V =−0.2422018 v

FIEE UNMSM

I b=

−0.2422018 + 0.0 21.5559633 × 10 + ( 60 + 1 ) 330 3

I9+;

Ic = I b × β

3e sa%e -ue Ic =−20.203487 µ × 60

Ic+

Ta(%i6n se sa%e

V ce =V CC −( R e + R C ) I C

V ce=−12−( 330 + 1000 )(−0.3486 m A )

VCE +;

INORME PREVIO DEL E#PERIMEN!O N$ %< TABLA 2

PARA) P*+% - Re+((% - R c+*/ - R *+0&/ - R(+((1  2 3n 4ransis45r NPN C6(6. Por ,ato ya -ue el transistor NPN 7/2/ est eco ,e silici5 entonces su

V'E+ %.&v, V'E73m9ral8+ %.0v, V'E7c5r4e8+ %.%v 2 :+*(%. Sabemos:

FIEE UNMSM

Rb=

R1 × R2

V =

R 1+ R 2

Rb=

56 K × 22 K

V =

( 56 + 22) K

Rb=15.794871 k Ω

allan,o %

I b=

R2 × V CC R1 + R2 × ( 12 ) (56 + 22 ) K

22 K

V =3.384615 v

V −V BE I b= Rb + ( β + 1 ) ℜ

−0.6 +( 120 + 1 ) 220

3.384615 3

15.794871 × 10

I9+ &0.&0*6&0>

3e sa%e -ue

Ic = I b × β

Ic = 65.651865 µ × 120

Ic+

Ta(%i6n se sa%e V e =ℜ × Ic V e =220 ×( 7.878223 m )

Ve +

V ce =V CC −( R e + R C ) I C V ce=12−( 220 + 1000 )( 7.878223 m)

VCE +

FIEE UNMSM

TABLA 3

PARA) P*+% - Re+((% - R c+*/ - R *+&6/ - R(+((1  2 3n 4ransis45r NPN C6(6. Rb=

R1 × R2

V =

R 1+ R 2

Rb=

68 K × 22 K

V =

( 68 + 22) K

Rb=16.62222 K Ω

R2 × V CC R1 + R2 × ( 12 ) ( 68 + 22 ) K

22 K

V =2.9333333 v

Sabemos:

allan,o %

I b=

V −V BE I b= Rb + ( β + 1 ) ℜ

2.93333 v − 0.6 3

16.62222 × 10

+ ( 120 + 1 ) 220 I9+

Ic = I b × β

3e sa%e -ue Ic =53.959608 µ × 120

Ic+

Ta(%i6n se sa%e V e =ℜ × Ic V e =220 ×( 6.475152 mA )

Ve +

FIEE UNMSM

V ce =V CC −( R e + R C ) I C V ce=12−( 220 + 1000 )( 6.475152 mA )

VCE +

TABLA 5

PARA) P*+*%%/ - R e+((% - R c+*/ - R *+&6/ - R(+((1  2 3n 4ransis45r NPN C6(6.

( R + P )× R R b= R + P + R Rb=

1

1

1

1

2

V =

2

( 68 + 100 ) K × 22 K ( 68+ 100 + 22) K

Rb=19.452631 k Ω

V =

R2 ×V CC

3a%e(os

R1 + P1+ R 2

( ) ( 68 + 100 +22) k 22 k × 12

V =1.3894736 v

V −V BE I b= R b + ( β + 1 ) ℜ

allan,o %

−0.6 + ( 120 + 1 ) 220

1.3894736 19.452631

I9+

3e sa%e -ue

Ic = I b × β

Ic = 17.135414 µ× 220

Ic+

Ta(%i6n se sa%e

V ce =V CC −( R e + R C ) I C

3

× 10

FIEE UNMSM

V ce =12−( 220 + 1000 )( 3.769791 m A )

VCE +

PARA) P*+(0%/ - R e+((% - R c+*/ - R *+&6/ - R(+((1  2 3n 4ransis45r NPN C6(6.

Rb=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

2

( 68 + 250 ) K × 22 K ( 68+ 250 + 22 ) K

Rb= 20.57647059 k Ω

allan,o %

3e sa%e -ue

V = V =

R2 ×V CC R1 + P1+ R 2

( ) ( 68 + 250 + 22) K 22 K × 12

V =0.7764705 v

V −V BE I b= Rb + ( β + 1 ) ℜ

0.7764705 − 0.6 20.57647058 × 10

I9+ .<?%&*

Ic =3.739061 µ × 220

Ic+

Ta(%i6n se sa%e

Sabemos:


V ce =12−( 220 + 1000 )( 0.8225934 m A )

VCE +

3

+ (120 + 1 ) 220

Ic = I b × β

FIEE UNMSM

PARA) P*+*%%/ - Re+((% - Rc+*/ - R*+&6/ - R(+((1  2 3n 4ransis45r NPN C6(6.

Rb=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

V =

2

( 68 + 500 ) K × 22 K ( 68+ 500 + 22) K

V =

( ) ( 68 + 500 + 22) K 22 K × 12

V − V BE I b= R b + ( β + 1 ) ℜ

allan,o %

R1 + P1+ R 2

V =0.44745762 v

Rb= 21.179661 k Ω

I b=

Sabemos

R2 ×V CC

0.44745762− 0.0 3

21.179661 × 10

+ ( 120 + 1 ) 220 I9+

Ic= I b × β

3e sa%e -ue Ic =9.361104 µ A × 220

Ic+

Ta(%i6n se sa%e


V ce =12−( 220 + 1000 )(−0.702082 m A )

VCE + ?.=6<=
FIEE UNMSM

PARA) P*+*M - Re+((% - Rc+*/ - R*+&6/ - R(+((1  2 3n 4ransis45r NPN C6(6. Sabemos:

R b=

Rb=

( R + P ) × R R + P + R 1

1

1

1

2

V =

2

( 68 + 1000 ) K × 22 K ( 68 + 1000 + 22) K

Rb= 21.555963 k Ω

allan,o %

V =

R2 ×V CC R1 + P1+ R 2

( ) ( 68 + 1000 + 22) K 22 K × 12

V =0.2422018 v

V − V BE I b= R b + ( β + 1 ) ℜ

0.2422018 − 0.0 21.555963 × 10

I9+

Ic = I b × β

3e sa%e -ue Ic =5.027403 µ A × 220

Ic+

Ta(%i6n se sa%e


V ce =12−( 220 + 1000 )(−1.63391 m A )

VCE + *%.&0%&=

3

+ (120 + 1 ) 220

FIEE UNMSM

PREVIO 6 Y 7 DISPO

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