DMT 121/3 – Electronic Devices
Laboratory Module
EXPERIMENT 6 VOLTAGE DIVIDER BIASING 1. OBJECTIVE 1.1 1.2
To analyze the voltage-divider voltage-divider bias circuit. To construct the dc load line.
2. INTRODUCTION The advantage of using voltage divider bias is that the base current is made small compared to the currents c urrents through the two base (“voltage divider”) resistors. With this property, transistor beta changes will no longer affect the base voltage and the collector current. 2.1
Quiescent dc base voltage R 2
VB
2.2
R 1
=
V E R E
=
IE for large
)
(6.3)
VCC - ICRC
(6.4)
Q u i e s c e n t d c c o l l ec ec t o r t o e m i t t er er v o l t a g e
VCC – I – IC( RC + RE)
=
VC – V – VE
(6.5)
Dc load line V CC
IC(sat)
VCE(off) 2.7
( IC
Quiescent collector voltage
VCE
2.6
(6.2)
Q u i e s c e n t d c c o l l e c t o r ( e m i t t er er ) c u r r e n t
VC 2.5
(6.1)
VB - VBE
IC
2.4
Q u i e s c e n t d c e m i t t er er v o l t ag ag e
VE 2.3
V CC
R 2
R C
=
R E
(saturation)
VCC (cutoff)
(6.6)
(6.7)
IIn n general, make : R 1
|| R 2
R E
(6.8)
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DMT 121/3 – Electronic Devices
Laboratory Module
3. COMPONENT AND EQUIPMENT 3.1 3.2 3.3 3.4 3.5
Resistors (1 kΩ (2), 4.7 kΩ, 10 kΩ) 10 kΩ potentiometer 2N3904 NPN silicon transistors DC power supply (0-15V) Multimeter
4. PROCEDURE 4.1 Determination of VB, VE, VC and VCE: 4.1.1 Construct the voltage divider bias circuit shown in Figure 6.1. + 15 V
RC
R1
1 kΩ
10 kΩ
V C V B
2N3940
V E R2
R E
4.7 kΩ
1 kΩ
Figure 6.1: Schematic diagram of circuit 4.1.2
4.1.3
Calculate the expected values of the quiescent dc base voltage (VB), emitter voltage (VE), collector voltage (V C), and collector emitter voltage (VCE) using typical value for the base-emitter voltage of a silicon transistor (0.7 V). Record these values in Table 6.1.
4.2 Measuring of VB, VC, VE,VCE and IC using Multimeter: 4.2.1 At this point, wire the circuit shown in the schematic diagram in Figure 6.1. 4.2.2 Apply power to the breadboard. (NOTE: The pin diagram for the 2N3904 is given in Figure 6.2)
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DMT 121/3 – Electronic Devices
Laboratory Module
Figure 6.2: 2N3904 pin diagram 4.2.3 4.2.4
Take your multimeter and measure VB, VC, VE and VCE. Record your results in Table 6.1 and make comparison between these measured values with the expected voltages determined before. (NOTE: Your results should agree within 10%)
4.2.5 4.2.6
Now measure the quiescent collector current and compare this value with the expected value (Equation 6.3). Record this value in Table 6.1.
4.3 Determination of DC Load Line: 4.3.1 Calculate the saturation and cutoff points on the dc load line for this circuit using Equation 6.6 & 6.7. 4.3.2 Record these values in Table 6.2. 4.3.3 Then, plot the dc load line using the calculated values of I C(sat) and VCE(off) as the endpoints of the load line. 4.3.4 On the same graph, plot the Q point based on the measured values of I C and VCE. (NOTE: You should find that the measured Q point lies essentially on the dc load line) 4.4 Measuring voltage and current in ‘cutoff’ condition: 4.4.1 By using the same transistor, disconnect power from the breadboard. 4.4.2 Replace resistors R1 and R2 with a 10 kΩ potentiometer as shown in Figure 6.3.
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DMT 121/3 – Electronic Devices
Laboratory Module
+ 15 V
RC
1 kΩ V C
10 kΩ
2N3940
V E R E
1 kΩ
Figure 6.3: Schematic diagram from Step 5 4.4.3 4.4.4 4.4.5 4.4.6 4.4.7
Now, connect the power to the breadboard. Connect a multimeter between the transistor‟s collector and emitter terminals. Then, slowly vary the 10 kΩ potentiometer until V CE as read by the multimeter reaches a maximum value, V CE(OFF). Then measure the corresponding collector current, I C(OFF). Record both values in Table 6.2.
4.5 Measuring voltage and current in ‘saturation’ condition: 4.5.1 Carefully vary the resistance of the 10 kΩ potentiometer until the collector current reaches a maximum value while continuing to measure the transistor‟s collector current (I C). (NOTE: This is the collector saturation current I C(sat).) 4.5.2 4.5.3
Now measure the corresponding collector emitter voltage V CE(sat). Record the values for both IC(sat) and VCE(sat) in Table 6.2.
(NOTE: At saturation, VCE(sat) is ideally zero while at cutoff, I C(off) is zero.) 4.5.4
Now, plot the values for IC and VCE at cutoff and saturation on the graph constructed in Step 3.
4.6 Measuring IC and VCE over the „ active region’ of the dc load line: 4.6.1 Now, vary the potentiometer so that you are able to measure about five combinations of IC and VCE. 4.6.2 Record all values in Table 6.2. 4.6.3 Then plot these values on the graph.
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DMT 121/3 – Electronic Devices
Laboratory Module
DMT 121/3 – ELECTRONIC DEVICES ASSESSMENT FORM
NAME: __________________________________________ MATRIX NO: __________________ COURSE: _____________________________________ EXPERIMENT NO: _______________
RESULTS: Table 6.1: DC Values Parameter
Measured Values
Expected
Transisto r 1
Value
VB VC VE VCE IC
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DMT 121/3 – Electronic Devices
Laboratory Module
Table 6.2: DC load line Expected Values
Measured Values
Condition I C
V CE
Cutoff (Step 5)
Saturation (Step 6)
Active Region (Step 7)
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I C
V CE
DMT 121/3 – Electronic Devices
Laboratory Module
CALCULATION
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DMT 121/3 – Electronic Devices
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DISCUSSION R C
+ 12 V
R1 Emitter Base
Gnd
R2
Collector
R E
Figure 6.4 A pnp transistor is used with voltage divider bias in the circuit shown above. Calculate the dc parameters listed in below ( R1 10k , R2 56k , RC 2.7k , R E 1.5k ). 1.
V B
2.
V E
3. I E 4. V C 5. V CE
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DMT 121/3 – Electronic Devices
Laboratory Module
CONCLUSION
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