datashet automotriz

SANKEN ELECTRIC CO.,LTD.

CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. • Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. • The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • Anti radioactive ray design is not considered for the products listed herein. • This publication shall not be reproduced in whole or in part without prior written approval from Sanken. • Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.

Contents Examples of Use of Typical Products by Application

.............. 2

1 ICs 1-1. Regulator ICs ................................................................................ 7

Application Note

Dropper Type Regulator ICs

......................................................... 8

Dropper Type System Regulator ICs Switching Type Regulator ICs

...................................... 16

................................................... 22

1-2. Power Switch ICs High-side Power Switch ICs

...................................................... 24

Low-side Switch ICs

...................................................... 50

1-3. Motor Driver ICs Stepper-motor Driver ICs DC Motor Driver ICs 1-4. HID Lamp Driver ICs 1-5. Custom ICs

............................................................ 56

...................................................................... 60 ..................................................................... 64

....................................................................................... 76

2 Discretes 2-1. Transistors 2-1-1. Transistors

............................................................................ 80

2-1-2. Transistor Arrays

............................................................... 96

2-2. MOS FETs 2-2-1. MOS FETs

......................................................................... 108

2-2-2. MOS FET Arrays

............................................................. 117

2-3. Thyristors 2-3-1. Reverse Conducting Thyristors

.............................. 125

2-4. Diodes 2-4-1. Alternator Diodes

........................................................... 127

2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes

................................ 128

..................................................... 129

2-4-4. General-purpose Diodes

............................................ 130

3 LEDs 3-1. Uni-Color LED Lamps

................................................................ 134

3-2. Bi-Color LED Lamps

.................................................................. 137

3-3. Surface Mount LEDs

.................................................................. 138

3-4. Infrared LEDs .................................................................................. 140 3-5. Ultraviolet LEDs

............................................................................ 141

3-6. Multi-chip Modules

.................................................................... 142

Part Number Index in Alphanumeric Order

......................................... 147

1

Examples of Use of Typical Products by Application Throttle System Motor Driver ICs (p.60 and after) •DC Control IC and full bridge power stage in a single package. Surface-mounting type series are also available.

SI-5300 / SPF7301

Driver Transistor Arrays (p.99) •Motor H-bridge of NPN x 2 and PNP x 2 in a single package. With integrated back emf. clamp diode.

Alternators

SLA8004

driver power transistors (p.68 and after) •Motor With integrated back emf. clamp diode.

(p.127) •Diodes Solder and press fit type as well as Zener type is available.

2SA1568 / 2SC4065

SG-9 / SG-10 / SG-14

ICs •Regulator Custom-made (contact our sales reps.)

Fuel Injectors transistors (p.84 and after) •Injector Transistors and MOS FETs are available in discretes and arrays in various packages.

2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103

Headlamps lamp driver ICs (p.64 and after) •HID High-voltage controller IC and 4-circuit power stage in a single package. Direct drive from CPU.

SLA2402M / SLA2403M / SMA2409M

for HID lamp ignition (p.125 and after) •Thyristors Best suited to C-discharge SW element on high-voltage primary side of an igniter. Integrates a reverse direction diode. High di/dt resistance

TFC561D / TFC562D

FET arrays for driving HID lamps (p.122) •MOS 4 circuits of N-ch MOS FETs of 450V/7A in a single package. SMA5113

stepper-motor driver ICs for AFS (p.58 and after) •2-ph Low output saturation voltage, integrated recovery diode, surface-mount.

SPF7211

2

Ignition System diodes for ignition (p.128) •High-voltage Withstand voltage range: 0.5 to 15kV SHV-01JN / SHV-05J / SHV-06JN

•2SD2141 / MN638S ICs •Ignition Custom-made (contact our sales reps.) Ignition transistors (p.89 and after)

Room Lamp

•Multi-chip LED modules (p.142) Car Navigation and Audio Power Steering

•Various LEDs (p.133)

driver MOS FETs (p.108 and after) •Motor Various packages integrating low ON resistors, bidirectional Zener diodes, etc.

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851

Tail Lamps LED •Power Custom-made (contact our sales reps.)

O2 sensor heater driver MOS FETs (p.115) •Heater Low ON resistor and integral gate protection diode.

FKV460S

Transmission

ABS and VDC

solenoid drivers (high-side power switch ICs) (p.26 and after) •AT Integral diagnostic function, surface-mount, 2- and 3-circuit types and other

driver MOS FETs (p.108 and after) •Solenoid/motor Various packages from discretes to arrays.

diverse models.

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M AT linear solenoid driver (high-side power switch ICs) (p.46 and after)

•Integral current detection resistor, current monitor output, surface-mount and

2SK3710 / FKV660S / SLA5027 / SDK08

driver ICs (p.54) •Solenoid/motor Surface-mount 4-circuit type with output voltage monitor. SPF5012

2-circuit types are also available.

SPF5017 / SPF5018 3

4

1 ICs 1-1. Regulator ICs Application Note

1-3. Motor Driver ICs

..............................................

Dropper Type Regulator ICs

....................

7 8

Stepper-motor Driver ICs SLA4708M (50V, 1.5A)

.........................

56

...................................

56 58

SI-3001S (5V/1A, With Output ON/OFF Control) ... 8

SPF7211 (40V, 0.8A)

.....................................

SI-3003S (5V/0.8A, 3-terminal) ....................... 10

DC Motor Driver ICs

....................................

60

SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12

SI-5300 (40V, 5A)

.....................................

60

SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14

SPF7301 (36V, 7A)

.....................................

62

Dropper Type System Regulator ICs

..

16

SI-3322S (5V, Surface-mount) ........................ 16

1-4. HID Lamp Driver ICs

SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18

SLA2402M (500V, 15A) .................................. 64

SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20

SLA2403M (500V, 7A) .................................... 68

...............

22

............................................

22

Switching Type Regulator ICs SI-3201S (5V/3A)

SMA2409M (500V, 7A) ................................... 72

1-5. Custom ICs

.....................................

76

1-2. Power Switch ICs High-side Power Switch ICs

...................

24

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24 SI-5151S (With Diagnostic Function) .............. 26 SI-5152S (With Diagnostic Function) .............. 28 SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30 SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32 SI-5155S (With Diagnostic Function) .............. 34 SLA2501M (With Diagnostic Function, 3-circuits) 36 SLA2502M (With Diagnostic Function, 4-circuits) 38 SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40 SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42 SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44 SPF5017 (Surface-mount 2-circuit, current monitor output function) 46 SPF5018 (Surface-mount, current monitor output function) 48 Low-side Switch ICs

...................................

50

..........

50

SPF5002A (Surface-mount 4-circuits)

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52 SPF5012 (Surface-mount 4-circuits with Output Monitor) 54

5

6

Application Note for Regulator ICs ■ Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation.

■ Power Dissipation (PD) 1. Dropper Type PD = IO • [VIN (mean) - VO] V PD = VO • I O ( 100 - 1) - VF • IO (1 - O ) VIN Efficiency depends on input/output conditions. Refer to the efficiency characteristics.

VIN : Input voltage

■ Setting DC Input Voltage Observe the following precautions when setting the DC input voltage: • VIN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. • V IN (max) must not exceed the DC input voltage of the electrical characteristics.

■ Screw Torque Screw torque should be between 0.588 to 0.686 [N • m] (6.0 to 7.0 [kgf • cm]).

■ Recommended silicone grease

2. Switching Type

VO : Output voltage

generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments.

: Efficiency

Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.

VF : Diode forward voltage

IO : Output current

■ Heatsink Design The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation P D (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is

Type

Suppliers

G746

Shin-Etsu Chemical Co., Ltd.

YG6260

GE Toshiba Silicones Co., Ltd.

SC102

Dow Corning Toray Silicone Co., Ltd.

■ Others This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage.

7

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

External Dimensions (unit: mm)

Features ● Output current of 1.0A ● 5-terminal type ● Voltage accuracy of ±2% ● Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A ● Built-in overcurrent, overvoltage and thermal protection circuits ● Withstands external electromagnetic noises ● TO220 equivalent full-mold package

3.2 ±0.2

4.2 ±0.2 2.8 ±0.2

a

(2.0) 0.95±0.15

(Ta = 25ºC)

Ratings

Unit

+0.2

Conditions

DC Input Voltage

VIN

35

V

Output Control Terminal Voltage

VC

VIN

V

Output Current

IO

1 1.0 *

A

PD1

18

W

With infinite heatsink

PD2

1.5

W

Stand-alone without heatsink

0.85 – 0.1

(8.0)

Symbol

(4.6)

Absolute Maximum Ratings

5.0 ±0.6

2.6 ±0.1

b

Parameter

(17.9)

16.9±0.3

4.0±0.2

7.9±0.2

0.5

10.0±0.2

+0.2 –0.1

0.45 P1.7±0.7• 4=6.8±0.7

3.9 ±0.7

Power Dissipation 1

Junction Temperature

Tj

– 40 to +125

ºC

Operating Temperature

TOP

– 40 to +100

ºC

Storage Temperature

Tstg

– 40 to +125

ºC

Junction to Case Thermal Resistance

j-c

5.5

ºC/W

Junction to Ambient-Air Thermal Resistance

j-a

66.7

ºC/W

(4.3)

8.2 ±0.7

2

3

4

1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN

5

a: Part No. b: Lot No.

(Forming No. 1101)


Equivalent Circuit Diagram Tr1

5

3 VO

VIN R1

Electrical Characteristics Symbol VIN

Input Voltage

VO

Output Voltage

min

typ

R3

a

6 *2 4.90

max 30 *1

5.00

Unit

Conditions e d

V

5.10

V

VIN =12 to 16V, IO = 0.4A

0.5

V

IO 0.4A IO 1.0A

VDIF 1.0

V

Line Regulation

∆VO LINE

30

mV

IO =0.4A, VIN = 6 to 16V

Load Regulation

∆VO LOAD

100

mV

IO = 0 to 0.4A

Output Voltage Temperature Coefficient

∆VO /∆T

±0.5

mV/ºC dB

f =100 to 120Hz

mA

IO = 0A

RREJ

54

Iq

3

Overcurrent Protection Starting Current

I S1

3 1.2 *

Output ON

VC, IH

2.0 *

Output OFF

VC, IL

0.8

V

Output ON

I C, IH

20

µA

VC = 2.7V

Output OFF

I C, IL

– 0.3

mA

VC = 0.4V

Vc Terminal

R2

1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection

e : Drive circuit f : Error amplifier g : Reference voltage

Standard Circuit Diagram D1

A

4

V

5

Control Voltage

Control Current

VIN

3

SI-3001S

OPEN

2

DC input +

Notes: *1. Since PD (max) = ( VIN – VO) • IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta -PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to –5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible.

8

R4

g

c

Vc (on/off)

IO =5mA, Ta = –10 to +100ºC

Quiescent Circuit Current

10

f

b

2

Dropout Voltage

Ripple Rejection

4 VO sense

( Tj= 25ºC, VIN =14V unless otherwise specified)

Ratings Parameter

MIC

C1

C2

4 1

+

CO

DC output

VO

Co : Output capacitor (47 to 100µF, 50V) C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. Protection diode. Required as protection against reverse D1 : biasing between input and output. (Recommended diode: Sanken EU2Z.)

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Electrical Characteristics ■ Io vs VDIF Characteristicsc

■ Line Regulation

■ Load Regulation 5.1

5.1

0.3

0.2

Output voltage VO (V)

IO = 0 (A) 0.4 (A) 1.0 (A)

0.4 Output voltage VO (V)

Dropout voltage VDIF (V)

0.5

5.0

V IN = 30 ( V) 12 to 16 ( V) 5.5 ( V) 5.0

0.1 4.9 0

0

0.5

0

1.0

4.9

0

5

10

Output current IO (A)

15

20

25

0

30

0

0.5

■ Output Voltage Temperature Characteristics

■ Rise Characteristics

5.1

1.0


Input voltage VIN (V)

■ Quiescent Circuit Current 15

7

Io = 0 (A)

16(V)

VIN = 30(V)

5.0 14(V) 5.5(V)

VIN — IOUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A)

4.9 0

--50

0

50

100

Load resistance

5 4 3

12 (Ω)

2

0

150

0

2

4

6

8

0

10

0

2

4

6

6

Io = 0 (A) VIN = 6 (V)

I o = 0 (A) VIN = 14 (V) 5

5

2 1

ON

10 (V) Output voltage VO (V)


3

30 (V)

4 3

5.5 (V) 20 (V)

2 14 (V)

0

0 0

1

2

4

3

0

5

0.5

1.0

Output ON/OFF control voltage VC (V)

1.5

2.0

2.5

3.0

■ Ta —PD Characteristics 20

6

Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.


Power Dissipation PD (W)

5 4 3 2

3 2

0 0 125

130

135

140

145

150

155

Ambient temperature Ta (ºC)


■ Overvoltage Protection Characteristics

4

1

1

OFF

10

■ Thermal Protection Characteristics

6

4

8


■ Overcurrent Protection Characteristics

5 Output voltage VO (V)

5


■ ON/OFF Control Characteristics 6

10

5 (Ω)

1



Quiescent current lq (mA)

12(V)



6

Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

15 200•200•2mm (2.3ºC/W)

10 100•100•2mm (5.2ºC/W) 75•75•2mm (7.6ºC/W)

5

1 Without heatsink

0 10

20

30

40


50

0 --30 –20

0

20

40

60

80

100

Operating temperature Ta (ºC)

9

Dropper Type Regulator ICs [3-terminal] SI-3003S

Features


● 3-terminal IC regulator with 0.8A output current ● Voltage accuracy of ±2% ● Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent full-mold package

4.2 ±0.2 3.2 ±0.2

2.8 ±0.2

16.9 ±0.3

7.9 ±0.2 4±0.2 0.5

10 ±0.2

Output current

b

(Ta =25ºC)

Symbol

Ratings

Unit

VIN

35

V

0.8 *

IO

2

2.6 ±0.15

Conditions 0.94 ±0.15

(13.5)

Parameter DC input voltage

2 max

a


A

PD1

22

W


PD2

1.8

W


Tj

–40 to +150

ºC

Operating temperature

TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

+0.2

0.85 –0.1

Power Dissipation

Junction to case thermal resistance

j-c

5.5

ºC/W

Junction to ambient-air thermal resistance

j-a

66.7

ºC/W

Electrical Characteristics Parameter

Symbol

Ratings

Input voltage

VIN

6*2

Output voltage

VO

4.90

Dropout voltage

VO LINE

Load regulation

VO LOAD

Ripple rejection

RREJ

Overcurrent protection starting current


30 * 1

V

5.00

5.10

V

Equivalent Circuit Diagram

Conditions

VIN

VO 5

1

0.5

V

IO 0.5A

1.0

V

IO 0.8A

30

mV

VIN =8 to 16V

100

mV

IO =0 to 0.5A

dB

f=100 to 120Hz

mA

IO =0A

OCP

VDIF

Line regulation

Quiescent circuit current

max

54 3

Iq IS1

0.9 *

3

10

Terminal connections 1. VIN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. VO (Forming No. 1115)

1 2 3 4 5

Unit

typ

0.45 –0.1

(root dimensions)

(Tj=25ºC, VIN =14V, IO =0.5A unless otherwise specified)

min

+0.2

4•P1.7 ±0.15 = 6.8 ±0.15

DRIVE

Junction temperature

TSD

DET ERR REF

3 GND

A

Notes: *1. Since P D (max) = (VIN – VO) • IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta —P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to –5%.

Standard Circuit Diagram D1 *2

1 DC input + *1

VIN

C1

C2

N.C

2

SI-3003S 3

5 4

N.C +

CO

DC output

VO

Co : Output capacitor (47 to 100µF, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33µF). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

10

Dropper Type Regulator ICs [3-terminal] SI-3003S

Electrical Characteristics ■ Io vs VDIF Characteristics

■ Line Regulation

■ Load Regulation 5.1

5.1

0.5

0.3

0.2

5.0 IO =0A =0.2A =0.5A =0.8A

4.9

IO=0.5, 0.8A =0.2A =0A

VIN =35V =25V =14V =6V

4.9

0

0 0

0.2

0.4

0.6

0

0.8

5

10

15

20

25

30

0

35

■ Output Voltage Temperature Characteristics

Ground current lg (mA)


200

4 3 2

50

100

0

2

4

6

8

0

10




6

5

5

VIN =6V 14V

1

4 3 2

0 0.5

1.0

1.5


25

30

35

With silicone grease Heatsink: aluminum

20 200 • 200 • 2mm (2.3ºC/W) 15 100 • 100 • 2mm (5.2ºC/W) 10 75 • 75 • 2mm (7.6ºC/W) 5 Without heatsink

25V

0

20


1

35V

15

25



3

10

■ Ta —PD Characteristics

VIN =6V IO=5mA

4

5



6

2

IO=0.8A =0.5A =0.2A =0A

100

0

0

150

150

50

1

0

0.8

250 IO =0A =0.5A =0.8A

5

4.9 –50

0.6

■ Circuit Current

6

VIN / IO: 30V / 0A 14V / 0.5A 6V / 0.8A

0.4



5.1

5.0

0.2




5.0

0.1

0




Dropout voltage VDIF (V)

0.4

2.0

2.5

0 120

140

160

180

200


0 –40

0

40

80

100


Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

11

Dropper Type Regulator ICs [2-output] SI-3101S


Features ● Single input dual output _{● Main output can be externally turned ON/OFF (with ignition switch, etc.) ● Low standby current ( 0.8mA) ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent 5-terminal full-mold package

3.2 ±0.2

4.2 ±0.2 2.8 ±0.2

16.9 ±0.3

4.0 ±0.2

7.9 ±0.2

0.5

10.0 ±0.2

2.6 ±0.1

5.0 ±0.6

(2.0)

b

0.95 ±0.15

(Ta=25ºC)

Ratings

Unit

DC input voltage

VIN

40

V

Battery reverse connection

VINB

–13 * 6

V

+0.2

0.85 –0.1

Conditions

(8.0)

Symbol

(4.6)

Absolute Maximum Ratings Parameter

(17.9)

a

+0.2 –0.1

0.45

VC

VIN

CH1

IO1

0.07 *

CH2

IO2

0.4 * 1

A

PD1

18

W


PD2

1.5

W


Tj

–40 to +125

ºC


TOP

–40 to +115

ºC

Storage temperature

Tstg

–40 to +125

ºC

Output control terminal voltage

P1.7 ±0.7 • 4 = 6.8±0.7

One minute

3.9

(4.3) 8.2 ±0.7

V 1

1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2

A

Output current 1

2

3

4

5


Power Dissipation Junction Temperature


j-c

5.5

ºC/W


j-a

66.7

ºC/W

(Forming No. 1101)

Equivalent Circuit Diagram Stand-alone without heatsink

VO1

VIN 1

4

DRIVE

OCP TSD

Electrical Characteristics

DET ERR

(Tj=25ºC, VIN =14V unless otherwise specified)

REF

5

Ratings Parameter

Symbol

min

typ

max

Unit

VO2

Conditions OCP

6 *2

35 * 1

V

OVP

CH1

VO1

4.80

5.00

5.20

V

CH2

VO2

4.80

5.00

5.20

V

IO =0.3A

0.1

V

IO1 =0 to 0.05A IO2 =0 to 0.3A

DRIVE

VIN

Input voltage

IO =0.05A

DET ERR

Output voltage

Channel-channel voltage difference (VO1 —VO2) Dropout voltage

Line regulation

VO

–0.1

CH1

VDIF1

1.0

V

IO1 0.05A

CH2

VDIF2

1.0

V

IO2 0.4A

CH1

VO LINE1

10

30

mV

VIN =6 to 18V, IO =0.05A

CH2

VO LINE2

10

30

mV

VIN =6 to 18V, IO =0.3A

CH1

VO LOAD1

30

70

mV

IO1=0 to 0.05A

CH2

VO LOAD2

40

70

mV

IO2 =0 to 0.3A

3

2 VC

GND

CONT

Standard Circuit Diagram D3

Load regulation

D2

VIN

CH1

RREJ1

54

dB

f =100 to 120Hz

CH2

RREJ2

54

dB

f =100 to 120Hz

mA

IO1=0A, VC =0V

SI- 3101S

D1

Ripple rejection

2

Quiescent circuit current Overcurrent protection starting current

0.8

Iq

CH1

I (S1) 1

CIN

3 0.1 *

0.5 * 3

I (S1) 2 VCH

4.2

4.5

4.8

V

Output OFF

VCL

3.2

3.5

3.8

V

Output ON

I CH

100

µA

VC =4.8V

Output OFF

I CL

µA

VC =3.2V

Output control voltage

Overvoltage protection starting voltage

VOVP

35 * 4

V

Thermal protection starting temperature

TTSD

130 * 5

ºC

Notes: *1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to –5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.

12

4 VO1

+

GND CO1

+ CO2

A

CH2

–100

3

A

Output ON

Output control current

VC

+

VO2 5

1

CO1 : CO2 : *1 CIN :

Output capacitor (47 to 100µF, 50V) Output capacitor (47 to 100µF, 50V) Input capacitors (approx. 47µF). Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)


Electrical Characteristics ■ Line Regulation (2)

5.1

■ Load Regulation (1) 5.1

5.1

VC = 5 (V) I O1 = 0 (A)

I O1 = 0mA


50mA

5.0 70mA

4.9

I O2 =

0A 0.3A 5.0

0.5A

5

10

15

20

0 0

25

V IN = 6V 14V

5

Input voltage V IN (V)

10

15

20

0

25

0

10


5.1

20

30

40

50

60

70

Output current IO (mA)


■ Load Regulation (2)

22V

5.0

4.9

4.9

0 0

■ Quiescent Circuit Current

6

VC = 5 (V) I O1 = 0 (A)

10

V IN = 6V,14V

5.0

I O1 = 0 (A) Vc = 0 (V)



VC = 5 (V) I O2 = 0 (A)

22V



VC = 5 (V) IO2 = 0 (A)


■ Line Regulation (1)

Load resistor 100Ω

4

∞

3 2

71.4Ω

5

1

4.9 0.1

0.2

0.3

0.4

0.5

0

0.6

0


5

5 Output voltage VO1 (V)

Output voltage VO2 (V)

6

6V

3 2 OFF

ON

8

0

10

0 0

1

2

3

4

5

5

IO2 = 0 (A) VC = 5 (V)

3

4.5V

2

VIN = 6V 14V 22V

I O1 = 0 (A) VC = 5 (V)

3 2 1 0

0

0.05

0.1

0.15

0

0.1

0.2 0.3 0.4

■ Ta—PD Characteristics

6

20

VIN = 6 (V) I O1 = I O2 = 5 (mA)

With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum



5

4 3 2

VO1

4 IO1 = I O2 = 5 (mA) VC = 5 (V)

3

VO2

2

1

1

0

0

0.5 0.6 0.7 0.8



5

20

4.5V

4



15

■ Overcurrent Protection Characteristics (2)

5

V IN = 6V 14V 22V

4

0

6

10

6


6

0


1

1


6

■ Overcurrent Protection Characteristics (1) 6

V IN = 14V, 22V

4


■ ON/OFF Control Characteristics

4

2


0


0

15 200 • 200 • 2mm (2.3ºC/W)

10 100 • 100 • 2mm (5.2ºC/W) 75 • 75 • 2mm (7.6ºC/W)

5 Without heatsink

0

130

140

150

160

Ambient temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

10

20

30


40

0 --30 --20 0

20

40

60

80

100 115


13



Features ● Single input dual output _{● Main output can be externally turned ON/OFF (with ignition switch, etc.) ● Low standby current ( 0.8mA) ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent 5-terminal full-mold miniature package

3.2 ±0.2

4.2 ±0.2 2.8 ±0.2

(17.9)

16.9 ±0.3

4.0 ±0.2

7.9 ±0.2

0.5

10.0 ±0.2

a

2.6 ±0.1

Ratings

Unit

DC input voltage

VIN

35

V

Battery reverse connection

VINB

–13 * 6

V


VC

VIN

V

CH1

IO1

0.04 * 1

A

CH2

IO2

0.1 * 1

A

5.0 ±0.6

0.95 ±0.15

(Ta=25ºC)

Symbol

+0.2

Conditions

0.85 –0.1

(8.0)

Parameter

(4.6)


(2.0)

b

+0.2 –0.1

0.45

Output current

One minute

3.9 ±0.7

P1.7 ±0.7 • 4 = 6.8 ±0.7

1

PD1

22

W


PD2

1.8

W



Tj

–40 to +150

ºC


TOP

–40 to +105

ºC

Storage temperature

Tstg

2

3

4

1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2

5

Power Dissipation

–40 to +150

ºC


j-c

5.5

ºC/W


j-a

66.7

ºC/W

(4.3)

8.2 ±0.7


(Forming No. 1101)

Equivalent Circuit Diagram Stand-alone without heatsink

VO1

VIN 1

4

Parameter

Symbol VIN

Input voltage

TSD

(Tj = 25ºC, VIN = 14V unless otherwise specified)

Ratings min

typ

6 *2

max

Unit

30 * 1

V

Conditions

REF

VO1

4.80

5.00

5.20

V

IO = 0.04A

CH2

VO2

4.80

5.00

5.20

V

IO = 0.1A

0.1

V

IO1 =0 to 0.04A IO2 =0 to 0.1A

1.0

V

IO1 0.04A IO2 0.1A

OCP

Output voltage

Dropout voltage

CH1

VO

–0.1

VDIF1

5 VO2

CH1

Channel-channel voltage difference (VO1 —VO2)

DET ERR

CH2

VDIF2

1.0

V

CH1

VO LINE1

10

50

mV

CH2

VO LINE2

10

50

mV

VIN = 6 to 30V, IO = 0.1A

CH1

VO LOAD1

30

70

mV

IO1 = 0 to 0.04A

70

mV

IO2 = 0 to 0.1A

OVP

DRIVE


DRIVE

OCP

DET ERR

3

2 VC

GND

CONT

VIN = 6 to 30V, IO = 0.04A

Line regulation

Load regulation CH2

VO LOAD2

40

CH1

RREJ1

54

dB

f = 100 to 120Hz

CH2

RREJ2

54

dB

f = 100 to 120Hz

mA

IO1 = 0A, VC = 0V

Ripple rejection Quiescent circuit current Overcurrent protection starting current

0.8

Iq

CH1

I (S1) 1

0.06 *

3

A

CH2

I (S1) 2

0.15 *

3

A

Output ON

VCH

4.2

Output OFF

VCL

Output ON

I CH

Output OFF

I CL

Standard Circuit Diagram D3 D2

VIN

4.5

4.8

V

3.2

3.5

Output control current –100


VOVP

30 *


TTSD

151 *

3.8

V

100

µA

VC = 4.8V

+

µA

VC = 3.2V

CIN

4

V

5

ºC

2 VC

Notes: *1. Since P D (max) = (VIN – VO) • IO1 + (VIN – VO2) • IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to –5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.

14

SI- 3102S

D1

Output control voltage

CO1 : CO2 : *1 CIN :

VO2 5

1 3

4 VO1

+

GND CO1

+ CO2

Output capacitor (47 to 100µF, 50V) Output capacitor (47 to 100µF, 50V) Input capacitors (approx. 47µF). Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)


Electrical Characteristics ■ Line Regulation (1)

■ Line Regulation (2)

5.10


5.10

5.10

VIN = VC IO2 = 5mA

VIN = VC IO1 = 5mA

VIN = VC

5.05 IO1 = 0A 20mA 40mA

5.00

4.95

4.90

5.05 IO2 = 0A 50mA 100mA

5.00




5.05

4.95

4.90

4.85 5

10

15

20

25

30

35

4.95

4.90

4.85 0

VIN = 6V 14V 30V

5.00

4.85 0

5


10

15

20

25

30

35

0

10



5.10

20

30

12

5

10

VC = 0V IO1 = 0A

VIN = 6V,14V

5.00

4.95 30V

4.90

4 IO1 = 0A 20mA 40mA

3 2 1

4.85

0 40

60

80

100

1

2

3

4

5

7

0

OFF ON

2

0

VIN = 6V 14V 30V

3 2

4 VIN = 6V 14V 30V

3 2

0 0

20


40

60

80

100

120

0

0.1


VIN = VC IO2 = 5mA


2



5

3

VO1

4 3 VO2

2

1

1

0 100

0 26

0.4

0.5

25

VIN = 6V IO1 = IO2 = 5mA

4

0.3


6

5

0.2

Output current IO2 (A)


6

35

1

0


30

5

4

6

25

VIN = VC IO1 = 5mA

1

1

5

20

6



4

4

15


5

3

10

VIN = VC IO2 = 5mA

5

2

5



VIN = 14V IO2 = 5mA Output voltage VO2 (V)

6

6

1

4

0 0

6

0

6


■ ON/OFF Control Characteristics

3

8

2






5.05

20

50

■ Quiescent Circuit Current

6 VIN = VC

0

40



With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum

20 200 • 200 • 2mm (2.3ºC/W)

15 100 • 100 • 2mm (5.2ºC/W)

10 75 • 75 • 2mm (7.6ºC/W)

5 Without heatsink

120

140

180

200

220

240

Ambient temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

28

30

32

34


36

38

0 –40 –20 0

20 40 60 80 100 120 140 160


15

Dropper Type System Regulator ICs SI-3322S


Features ● High accuracy output of 5V±30mV ● Memory backup power supply 4V±0.2V ● Power on reset function ● Supply voltage monitor function ● Watch dog timer ● CR not required for setting external time constant

Index area

SI-3322S Lot SKA

7.40 10.00 7.60 10.65

Lot

1

2

3 0.25 • 45° 0.75

Adhesive surface 10.10 10.50

0.23 0.32

2.35 2.65


Symbol

0.33 0.51

Applicable terminals BAI, VCC, VNMIC

VIN (1)

Ratings

Unit

–0.3 to 32

V

–0.3 to 7

V

0.10 0.30

1.27 BSC

Conditions

0.40 1.27

0° to 8°

Coplanarity (height difference among leads) 0.1mm max.

VS, NMIC, RSTTC, OUTE Terminal voltage VSC, NMI, RESET, OUTE

VIN (2)

W/D, STBY

Standard Connection Diagram

Storage temperature

Tstg

—

–40 to +125

°C


Top

—

–40 to +105

°C

PD

—

1.4

W

Power dissipation

+ IG. SW

+ 47µF

R2

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

min

typ

max

Unit

VSC

3.8

4

4.2

V

BAI = 4.2 to 16V, ISC = –0.2mA

VS

4.97

5

5.03

V

VCC = 5.2 to 16V, IO = –350mA

VS –VSC voltage difference

∆VS

0.3

V

BAI input current

I BAI

0.6

mA

VCC input current

I CC

5

mA

VCC = 3 to 16V

VB input current

IB

25

mA

VCC = 3 to 16V

VCC = 5.2V, ISC = –50mA BAI = 4.9 to 16V, ISC = –0.2mA

20

mA

VCC = BAI = 3 to 16V, ISC = 0mA

NMIC input current

I NMIC

–0.04

–0.1

–0.4

mA

VCC = BAI = 14V

W/D input current

I W/D

–0.04

–0.1

–0.4

mA

VCC = BAI = 14V

RSTTC input current

I RTC

–0.04

–0.1

–0.4

mA

Lo

VNIL

4.9

5

5.1

V

Hysteresis

∆VN

0.12

0.3

V

NMI judge voltage Hi

VNOH

Lo

VNOL

Hi

VSOH VSOL VROH

Lo

VROL

Hi

VUOH

Lo

VUOL

Hi

VTOH

Lo

VTOL

VNMIC VCC 1 BAI +

VB

VS

VSC

VS–0.5 0.6

SI-3322S

VS–0.5 0.6 VS–0.5

STBY

R1, R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) • 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.

Isource = –1mA Isink = 0.5mA

V

Isource = –1mA

V

Isink = 0.5mA

V

Isource = –1mA

V

Isink = 0.5mA

VS–0.5

V

Isource = –1mA

V

Isink = 0.5mA

STBY

12

RESET

RSTTC: Normally open. GND connected when TRE is to be halved.

+

+

+

VNMIC 6

VCC 5

VB

VSC

VS 4

3

2

– + Current limit circuit

Main regulator BAI 1

9 NMI – +

– +

NMI judge circuit

Backup regulator

Reference oscillation circuit

RESET output voltage 0.6

Microcomputer

Circuit Block Diagram

Start circuit

V

AVCC

NMI

15

RESET

GND

VCC = BAI = 14V

V

VCC 9

NMI

Logic circuit

STBY output voltage Hi

2

NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND 13 11 10 16 14 OPEN or GND

NMIC = 0V

NMI output voltage

Lo

3

Conditions

VSC output voltage

IS

4

8

VS output voltage

VS input current

5

47µF

BATT

Ratings

+ 68µF

120Ω 6


A/D converter, I/O circuit, etc.

47µF

R1

Ta = 25°C

OUTE control circuit

GND 8

Counter

Frequency comparator

STBY control circuit

15 STBY

RESET control circuit

12 RESET

OUTE output voltage 0.6 VS–0.5

V

Isource = –1mA

0.6

V

Isink = 0.5mA

13 NMIC

11 OUTE

10 OUTE

16 W/D

14 RSTTC

OUTE output voltage TST

5

10

20

ms

Reset release time

TRE

60

75

90

ms

Reset cycle

TRC

40

50

60

ms

Reset period

TRP

20

25

30

ms

W/D signal stop detect period

TWS

10

12.5

15

ms

Standby release time

Reset signal output time

TNR

80

Standby signal output time

TRS

10

W/D fail judge frequency

FFH

2

Out enable release time

TWE

40

µs µs

50

Notes: The direction of current flowing into the IC is positive (+).

5

kHz

10

ms

Timing Chart VCC VS

(BAI=14V)

VSC

0V

0V

NMI STBY

TRS

TST

TRP

TRE

TNR

RESET OUTE

TWS

TRC

TWE

OUTE W/D

HI or Lo Power on

16

VNIL

VNIL+∆VN

W/D input stop W/D input start (microcomputer (microcomputer resets) runaway)

Power off

Dropper Type System Regulator ICs SI-3322S

Electrical Characteristics ■ VS Line Regulation

■ VS Load Regulation

■ VS Rise Characteristics

5.03

5.03

6

5.02

5.02

5

5.01

4

VS (V)

VS (V)

IO = 0A

5 4.99

5 4.99

0.4A

4.98 4.97

VS (V)

IO = 0A 5.01

5

10

15

20

12V

1

VCC = 5.2V

4.97

25

0.4A 2

4.98

0

3

0

0.2

0.4

VCC (V)

0.6

0.8

1.0

1.2

0 0

1.4

2

4

■ VS Overcurrent Protection Characteristics

■ VCC Input Current

6

6

8

10

VCC (V)

IO (A)

■ VB Input Current

5

20

No load 5

4 15

3 VCC = 7V

3

I B (mA)

ICC (mA)

VS (V)

4

2

10

2 12V

5

1

1 0

0

0.5

1

1.5

0

2

0

5

10

IO (A)

15

0

20

0

5

VCC (V)

■ VS Input Current

■ VSC Rise Characteristics

15

20

■ VSC Overcurrent Protection Characteristics

5

20

10

VCC (V)

6

No load 5

4 15

10

VSC (V)

VSC (V)

IS (mA)

4 3

2

3 2

5 1

0

0

5

10

15

0

20

1

0

5

10

VCC (V)

15

0

20

0

2

BAI (V)

■ BAI Input Current

6

8

10

ISC (A)

■ VS-VSC Voltage Difference

■ NMI Judge Voltage Characteristics

500

500

4

6

No load 5

400

400

200

300

NMI (V)

∆VS (mV)

IBAI (µA)

4 300

200

3 2

100

100

0

0 0

5

10

BAI (V)

15

20

1

0

20

40

60

ISC (mA)

80

100

120

0 4.5

4.7

4.9

5.1

5.3

5.5

VCC (V)

17

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004


Features ● Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) ● Power on reset function ● Watchdog timer ● Built-in drooping type overcurrent and thermal protection circuits (ch1)

DC input voltage

VIN


EN

Output current

–0.3 to 35 0.4 0.2

W/D/C

TC terminal input voltage

TC

CK terminal input voltage

CK

Vo1-fail terminal output voltage

Vo1-fail

Reset terminal output voltage

RESET

+0.2

2.0 –0.8

1

Reverse connection 1 min max.

8 +0.15

1.27±0.25

400mS

V

40

Io2

Remarks

V

40

Io1

W/D/C terminal input voltage

Unit

–13 to 35

CH2

MODE

Fin thickness

(Ta=25ºC)

Ratings

CH1

MODE terminal input voltage

1.0 –0.05 9

0.4 – 0.05

2.5±0.2

Symbol

+0.1

10.5±0.2 16

7.5±0.2


12.2±0.2

400mS

+0.15

0.25– 0.05

A

–0.3 to 7

V

°C



Tj

–40 to 150

Storage temperature

Tstg

–40 to 150

°C

Thermal resistance (junction to case)

j-c

4.1

°C/W


Thermal resistance (junction to ambient air)

j-a

38

°C/W

With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)

D1 Vo1

Vin EN

Vo1

SPF3004 Cin

Vo1 fail

MODE

+

+

Co1

Vo2

Load

Battery

Parameter

Output voltage

Dropout voltage

Ripple rejection

min

max

5.00

5.10

CH1

Vo1

4.85

5.00

5.15

CH2

Vo2

3.15

3.30

3.45

VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 125°C VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = –40 to 150°C VIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A

CH1 CH1 CH2 CH1 CH2

VDIF11 VDIF12 VDIF2 RREJ1 RREJ2

0.5 0.25 0.5

Io1 = 0.4A Io1 = 0.2A, Tj = 25°C Io2 = 0.2A

Iq

Overcurrent protection CH1 starting current CH2 CH1 Residual current at a short CH2 EN output control voltage

VENth

ON

OFF Vo1-fail terminal LOW voltage Vo1-fail terminal HI voltage Reset terminal LOW voltage Reset terminal HI voltage CH1 Reset detect voltage CH2

0.402 0.201 0.402 0.201 1.0 0.9

50 250 10 100 1.80 0.80 1.80 0.80 3.5 3.5 50 30 1.0 0.5

IENH1 IENH2 –1.0 IENL Vfail L Vfail H Vo1–0.8V * 5 0.5 VRSL VRSH Vo1–0.8V * 5 Vo1thH Vo1 • 0.97 Vo1thL 4.05 Vo2thH Vo2 • 0.985 Vo2thL 3.00 ∆Vo1th 0.255 ∆Vo2th 0.105 tdly 0.70 • Rtc • Ctc 0.72 • Rtc • Ctc 0.74 • Rtc • Ctc 0.52 • Rtc • Ctc 0.54 • Rtc • Ctc 0.56 • Rtc • Ctc twd 0.04 • Rtc • Ctc 0.06 • Rtc • Ctc 0.08 • Rtc • Ctc twdp Vmodeth 1.0 3.0 ImodeH 200 ImodeL 1.0 –1.0 Vw/d/cth 3.0 1.0 Iw/d/cH 200 Iw/d/cL 1.0 –1.0 Vckth 3.0 1.0 IckH 200 IckL 1.0 –1.0

V

V

V

db

f = 100 to 200Hz

µA

VIN = 16V, EN = 0V VIN = 35V, EN = 0V

mA mA A A V µA V V V V V V V V V V S S S V

Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 2.8V Vo1 = 0V Vo2 = 0V Tj = –40 to 125°C

Rtc

Load

+

+ Co2

Ctc

Cin: Capacitor (39µF) for oscillation prevention CO1: Output capacitor (39µF) CO2: Output capacitor (39µF) Tantalum capacitors are recommended especially for low temperatures. D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

Timing Chart

*8 EN = 6.4V, Tj = –40 to 125°C EN = 3.51V, Tj = –40 to 125°C EN = 0V, Tj = –40 to 125°C Isink = 250µA, (Pull-up resistance 20kΩ typ) Isource = 15µA Isink = 250µA, (Pull-up resistance 20kΩ typ) Isource = 15µA Vrs, Vfail 4.5V Vrs, Vfail 0.8V Vrs 3.0V Vrs 0.8V ∆Vo1th = Vo1thH-Vo1thL ∆Vo2th = Vo2thH-Vo2thL Min. set time: 6mS Min. set time: 4mS Min. set time: 400µS

CH1 CH2 Power on reset delay time W/D time W/D pulse time MODE terminal control voltage MODE = 5V ON MODE terminal µA control current MODE = 0V, Tj = –40 to 125°C OFF V W/D/C terminal control voltage *7 W/D/C = 5V ON W/D/C terminal µA control current W/D/C = 0V, Tj = –40 to 125°C OFF V Min. clock pulse time = 5µS (Duty 50%) CK terminal control voltage CK = 5V ON CK terminal control µA current CK = 0V, Tj = –40 to 125°C OFF Notes: *3: Refer to dropout voltage. *4: Since PD (max) = {(VIN–VO1) • (IO1+ IO2)} + (VIN • Iq) + {(VO1–VO2) • IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 °C (min.) and 165°C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.

Reset detect voltage hysteresis width

TC

Conditions

4.90

IGND Is11 Is21 Is21 Is22

35 * 4

Unit

Vo1+VDIF1 * 3

54 54 10 50 5 70

CK

D2

Ratings typ

VIN

GND current

18

Symbol

Vo1


EN output control current

W/D/C

CH1

Input voltage

RESET

GND


Vin

EN (ON) operation

EN

EN (OFF) operation

OCP operation Vo1thH

Vo1thL

Vo1

Reset operation

Vo1 fail (Vo1 pull-up)

OCP operation Reset operation

Vo2

Vo2thL

Vo2thH

MODE (Vo1 system connection)

Vmodeth Vo1 pull-up status

Open status

TC (3.3 pull-up)

RESET W/D/C

tdly

tdly

twd

(Vo1 system connection)

tdly-twdp twdp Open status

CK

W/D Stop period


Electrical Characteristics ■ Rise Characteristics of Output Voltage

■ Line Regulation (V01)


6

IO2=0A 0.2A

2

3.50 Output voltage VO2 (V)

IO1=0A 0.4A

4


Output voltage VO1, VO2 (V)

5.10

5.00

IO1=0A 0.2A 0.4A

0

2

4

6

8

10

IO2 =0A 0.1A 0.2A 3.30

4.90 0

3.40

0


10

20

30

40

0

10

■ Load Regulation (V01)

20

30

40




■ Dropout Voltage (V01) 1.0

3.40

VIN =6V 10V 14V 18V

0.5

3.30

4.90 0

Dropout voltage

VIN =6V 10V 14V 18V



5.00

Vdif1 (V)

3.50

5.10

0

0.1

0.2

0.3

0

0.4

0


0.05

0.10

0.15

0

0.20

0

0.2


■ GND Current

0.4

0.6


■ Overcurrent Protection Characteristics (V01)


6

IO1=0.4A

20

IO1=0.2A IO1=0A

0

10

20

30

4

VIN =6V 10V 14V 18V 2

0

40



GND current IGND (mA)

40

0


0.5

0

1.0

0

0.2

0.4

0.6


■ EN Terminal Output Voltage


6

6

IO1=5mA

4

2

4

2

0 120

140

160

180


200

Power dissipation PD (W)



2



100

VIN =6V 10V 14V 18V

1

2

3

EN terminal voltage VEN (V)

4

30

Infinite heatsink equivalent (Tc=25°C)

20

10

Copper foil area (5.0•7.4mm, t=1µm)

0 -40

0

25

50

85

125 150


19



Features ● Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) ● Power on reset function ● Watchdog timer ● Built-in drooping type overcurrent and thermal protection circuits (ch1)

12.2±0.2

(Ta=25ºC)

Ratings

Unit

Remarks

–13 to 35

V

Reverse connection 1 min max.

Vo1, Vo2 output control terminal voltage

EN

–0.3 to 35

V

Vo2 output control terminal voltage

VC

–0.3 to 35

V

CH1

Io1

0.4

CH2

Io2

0.2

TC terminal input voltage

8 +0.15

1.27±0.25

0.4 –0.05

2.5±0.2

VIN2

Output current

+0.2

1

VIN1

DC input voltage

Fin thickness

2.0 – 0.8

Symbol

1.0 –0.05 9

7.5±0.2


+0.1

10.5±0.2 16

+0.15

0.25–0.05

A

TC

CK terminal input voltage

CK –0.3 to 7

W/D/C terminal input voltage

W/D/C

Reset terminal output voltage

RESET


P D1

Power dissipation

18.6

P D2

2.97

Tj

–40 to 150


V

W

With an infinite heatsink mounted. D1

*1

Vin1

°C

EN Vin2


Top

–40 to 105

°C

Storage temperature Thermal resistance (junction to case)

Tstg

–40 to 150

°C

j-c

6.7

°C/W

With an infinite heatsink mounted.

°C/W

*1

Thermal resistance (junction to ambient air)

42

j-a

Battery

Cin –

Vc

Vo1 3Pin

4Pin

2Pin

14Pin

6Pin

SFP3006 7Pin

5Pin 1,9, 12,13Pin

GND

RESET

Rtc Co1

Vo2 8Pin 10Pin 11Pin

Tc W/D/C

CK

–

Load

Ctc

D2

Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18µm) * The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.

Load

Co2


Symbol

Input voltage Output voltage Dropout voltage Ripple rejection

max 35

CH1

Vo1

4.85

5.00

5.15

CH2

Vo2

4.85

5.00

5.15

CH1

VDIF1

0.5

CH2

VDIF2

0.5

CH1

RREJ1

54

CH2

RREJ2

54

Iq IGND

5

10

mA

70

100

mA

Is21

0.201

0.8

CH1

Is21

0.402

1.8

CH2

Is22

0.201

0.8

VENth

0.9

3.5

IENL

Reset terminal LOW voltage

VRSL

Reset terminal HI voltage

VRSH

Reset detect voltage

CH

50 –1.0

1.0 0.5

Vo1-0.8V

Vo1thH

Vo1• 0.97

VIN1 = 6 to 18V, Io = 0 to 0.3A

µA

A

f = 100 to 120Hz VIN1 = 16V, VEN = 0V VIN1 = 35V, VEN = 0V

A

(2 Pin)

µA V

Isink = 250µA (Pull-up resistance 20kΩ typ)

V

Isource = 15µA

V

Vrs

4.5V 0.8V

0.93 • Rtc • Ctc 1.03 • Rtc • Ctc 1.13 • Rtc • Ctc

S

Min. set time: 4mS


S

Min. set time: 400µS

IckL

–1.0

3.0

V µA

1.0

Min. clock pulse time: 5µs (Duty 50%) VCK = 5V VCK = 0V

1.0

IcH

Vc output control current W/D/C terminal control voltage W/D/C terminal control current

Vcth

3.5

V

300

µA

IcL

–1.0

1.0

Vw/d/cth

1.0

3.0

V

200

µA

ON

Iw/d/cH

OFF

Iw/d/cL

–1.0

1.0

20

TC

CK

(8 Pin)

(10 Pin)

Timing Chart Vin1, Vin2 (+B) EN

ENthL

ENthH Vo1thH

Vo1thL

Vo

Vc = 0V

Vo2

VW/D/C = 5V

RESET

VW/D/C = 0V

CK

(Main power supply)

TC

Notes: *2: Refer to Dropout Voltage. *3: Since PD (max) = (VIN–VO1) • IO1+ (VIN2–VO2) • IO2 + (VIN • Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 °C (min.) and 165°C (typ). These values represent the design warranty.

(11 Pin)

(1,9,12,13 Pin)

(BACK UP power supply)

Vc = 5V

W/D/C

GND

Vo1

Vc output control voltage

Drive2 OCP2

*4

t wd

200

(7 Pin)

(5 Pin)

EN = 0V

t wdp

OFF

(14 Pin)

Vo2 Vc (Vo2: EN)

Vc

W/D pulse time

1.0

Err.

D E T

RESET

(6 Pin)

EN = 5V

W/D time

IckH

Err.

Vo1 RESET W/D

Vin2

V

Min. set time: 6mS

Vckth

Drive1 OCP1

D E T

Vo2 = 0V

Vrs

ON

EN TSD

EN

Vo1 = 0V

V

CK terminal control current

(4 Pin)

(3 Pin)

Vo2 = 4.5V

S

CK terminal control voltage

Vo1

Vin1

Vo1 = 4.5V


4.05

Circuit Block Diagram

Io1 = Io2 = 0.2A

t dly

Vo1thL Power on reset delay time

Cin: Capacitor (39µF) for oscillation prevention CO1: Output capacitor (39µF) CO2: Output capacitor (39µF) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47µ F in parallel). D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

V

50

CH2

Conditions

* 2, 3 VIN2 = 6 to 18V, Io = 0 to 0.3A

250

1.8

OFF

V

50

0.402

IENH

V

10

Is11

ON

Unit

db

CH1

EN output control voltage EN output control current

Ratings typ

Vo1+VDIF1

GND current

Residual current at a short

min

VIN1, 2



–

W/D/C

tdly

twd twdp

W/D OFF mode


Electrical Characteristics ■ Rise Characteristics of Output Voltage (V01)

■ Rise Characteristics of Output Voltage (V02)

IO1=0A 0.2A 0.4A 2

5.10

4

IO2 =0A 0.2A 0.4A 2

0 0

2

4

6

8

10

2

4

6

8

0

5.05

5.05

5.05

5.00

IO1=0A 0.1A 0.2A 4.95

4.90 15

20

25

5.00

VIN =6V 10V 14V 18V

4.95

4.90

30


5.10

10

10

0

0.1


0.2

0.3

0

0.05

0.10

0.15

0.20

■ Overcurrent Protection Characteristics (V01) 6


Vdif2 (V) Dropout voltage

0.2

30


0.6

0.4

25

VIN =6V 10V 14V 18V

4.95

4.90

0.4

■ Dropout Voltage (V02)

0.6

20

5.00


■ Dropout Voltage (V01)

15


5.10

5

5


5.10

0

IO1=0A 0.2A 0.4A

4.95

10




5.00



Vdif1 (V)

5.05

4.90 0


Dropout voltage


4

0


6



6

0.4

Ta=150°C 25°C –40°C

0.2

4

VIN =6V 10V 14V 18V 2

Ta=150°C 25°C –40°C 0

0

0.2

0

0.4

0

0.1


0

0.2

0



0 0

0.2

0.4


0.6




16

2

0.8

20

IO1=5mA

VIN =6V 10V 14V 18V

0.6


6

4

0.4



6

0.2

4

2

0 100

125

150

175


200

Infinite heatsink equivalent (Tc=25°C)

12

8

4

0 -50

Copper foil area (5.0•7.4mm, t=18µm)

0

50

100

150


21

Switching Type Regulator ICs SI-3201S


Features ● Output current of 3A (Ta = 25ºC, VIN = 8 to 18V) ● High efficiency of 82% (VIN = 14V, I O = 2A) ● Requires 5 external components only ● Built-in reference oscillator (60kHz) ● Phase internally corrected ● Output voltage internally corrected ● Built-in overcurrent and thermal protection circuits ● Built-in soft start circuit

3.2 ±0.2

4.2 ±0.2 2.8 ±0.2

(17.9)

16.9 ±0.3

7.9 ±0.2

4.0 ±0.2

0.5

10.0 ±0.2

a

2.6 ±0.1

5.0 ±0.6

(2.0)

b

0.95 ±0.15

Symbol

Ratings

Unit

+0.2

Input voltage

VIN

35

V

Output voltage

IO

3

A

0.85 –0.1

Conditions

(8.0)

Parameter

(Ta=25ºC)

(4.6)


+0.2 –0.1

0.45

SWOUT terminal voltage

VSWOUT

–1

V

PD1

22

W

1.8

W

Tj

–40 to +150

ºC

Storage temperature

Tstg

–40 to +125

ºC


j-c

5.5

ºC/W


j-a

66.7

ºC/W

Output current Operating temperature

3

4

5


(Forming No. 1101)

Standard Circuit Diagram

VIN

SI-3201S

1

VIN

VIN

typ

max 18

8

Unit

Conditions

IO

0.5

3

A

Top

–40

+85

ºC

e

f

C1

V

D1

+

g

+

5 SS h

C3

Ta—PD characteristics

VO

SWOUT

b d

L1

2

SW Tr

a c

Ratings

Symbol min

Input voltage

2

Stand-alone

Recommended Operating Conditions Parameter

1. VIN 2. SWOUT 3. GND 4. VS 5. SS

With infinite heatsink 1

PD2

(4.3)

8.2 ±0.7

Power Dissipation Junction temperature

3.9 ±0.7

P1.7 ±0.7 •4 = 6.8 ±0.7

GND

VS

C2

4

i

3 GND

Electrical Characteristics Parameter Output voltage

(VIN = 14V, I OUT = 2A, Tj = 25ºC unless otherwise specified)

Ratings

Symbol min

typ

max

4.80

5.00

Unit

Conditions

5.20

V

Line regulation

VO LINE

100

mV

VIN = 8 to 18V

Load regulation

VO LOAD

50

mV

IO = 0.5 to 3A

VO

Efficiency *1 Oscillation frequency

82 f OSC


Iq


IS

Soft *3 start terminal

Low level voltage

VSSL

Source current when low

I SSL

Discharge resistance

RDIS

50

%

60

70

kHz

5

10

mA

3.1

15

A

25 200

IO = 0A

*2

0.2

V

35

µA

VSSL = 0.2V

kΩ

VIN = 0V

Notes: *1. Efficiency is calculated by the following equation: VO • I O = • 100 (%) VIN • I IN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.

GND

C1: 1000µF C2: 1000µF

L 1: 250µH D1: RK46 (Sanken)

a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver

f : Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage

Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000µF or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. (3) L1 should be a choke coil with a low core loss for switching power supplies. (4) Use a Schottky barrier diode for D1 and make sure that the reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (–1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.

SI-3201S 5

SS C3

22

SI-3201S 5

SS

SI-3201S 5

SS C3

Switching Type Regulator ICs SI-3201S

Electrical Characteristics ■ Load Regulation

5.10

5.00


Io = 0A = 1A = 2A = 3A

4.95

4.90

6

5.10

5

5.05 5.00

VIN =18V = 10V = 7V

4.95 4.90 4.85

4.85 0

5

10

15

20

25

30

0

35

0.5


6

80


(%) Efficiency

1.0

1.5

2.0

2.5

V IN = 18V = 10V = 7V

60

50

40 1.5

0

2

2.0

2.5

3.0


4

6

8

10

■ Overcurrent Protection Temperature Characteristics 6 5

VIN =18V = 10V = 7V

4 3 2

4

TC = +100, 25, --20ºC

3 2 1 0

0 1.0

2


1

0.5

3

0

3.0


90

0

4


■ Efficiency Curve

70

Io = 0A = 1A = 2A = 3A

1



5.05


5.15


■ Line Regulation

0

1.0

2.0

3.0


4.0

5.0

0

1.0

2.0

3.0

4.0

5.0


■ Ta —PD Characteristics 25

With silicone grease Heatsink: aluminum



20

15

10

5

0 –40

0

40

80

120

160


23

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04


Features

1.0 ±0.3

● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Surface-mount full-mold package

0.89 ±0.15 2.54 ±0.25

0.25

+0.15

0.75 –0.05

+0.15

a b Pin 1

Power supply voltage

VB

–13 to +40

V

Drive terminal applied voltage

VD

–0.3 to VB

V

Input terminal voltage

VIN

–0.3 to +7.0

V

DIAG output applied voltage

VDIAG

–0.3 to +7.0

V

DIAG output source current

IDIAG

3

mA

Voltage across power supply and drive terminal

VB–D

VB –0.4

V

Output current

IO

1.5

A

Power dissipation

PD

2.6

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

19.56 ±0.2

Conditions 3.6 ±0.2

Unit

1.4 ±0.2

Ratings

8

20.0max

(Ta=25ºC)

Symbol

4.0max

Parameter

9

6.8max

6.3 ±0.2 8.0 ±0.5 0 to 0.15

9.8 ±0.3

3.0 ±0.2

16

0.3 –0.05


SMD-16A


Equivalent Circuit Diagram Without heatsink, all circuits operating

The MIC is bound by the dotted lines.

9,12,16

IN1

*

2

Drive

CONT. 11kΩ typ.

DIAG1

3

O.C.P

DIAG DET.


VB 2

Pre. Reg.

(VBopr =14V, Ta=25ºC unless otherwise specified)

1,15 14

T.S.D

Out1 2

*

D1 1

*

Ratings Parameter

Symbol

Operating power supply voltage

VBopr

min

typ

max 16

6.0

Unit

Conditions IN2 DIAG2


Iq

Threshold input voltage

VINth

5 0.8

I IN

Hi output

12

mA

3.0

V

1.0

mA

Input current

µA V

Output terminal sink current

IO (off)

2.0

mA

Saturation voltage of DIAG output

VDL

0.3

V

IDIAG = 3mA

100

µA

VDIAG = 5V

30

kΩ

IDGH

Open load detection resistor

Ropen

1

IS

1.6


VIN = 0V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V

A

VO = VBopr –1.9V

TON

8

30

µs

IO = 1A

TOFF

15

30

µs

IO = 1A

TPLH

10

30

µs

IO = 1A

TPHL

15

30

µs

IO = 1A

Output transfer time

DIAG output transfer time

Out2

*2

D2 1

*

*2

VIN = 5V

0.5

Leak current of DIAG output

8,10 11

100

0

O.C.P

DIAG DET.

4,5,13

VCE (sat)

I IN

Drive

CONT.

6

Lo output

Saturation voltage of output transistor

Lo output

7

11kΩ typ.

V

GND

[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection

*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be shorted at a pattern near the product.

Standard Circuit Diagram VB PZ

Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except, VB and GND, are open).

D1 Out

SDH04 IN

Diagnostic Function

VCC DIAG

GND

Load

5.1kΩ VB 3.0V

GND

GND

VIN

0.8V

Truth table VIN VO

VOUT SHORT Is

OPEN OPEN

OVER VOLTAGE

H

L

L

GND

TSD

Note 1: A pull-down resistor (11 kΩ typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series.

IO

GND VDIAG Normal

24

H

Shorted load

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Electrical Characteristics ■ Quiescent Circuit Current (dual circuit)

■ Circuit Current (single circuit)

VIN = 0V

20

50

20

IB (mA)

30 125ºC 20 VIN = 0V

10

VO shorted VO open 10

Ta = –40ºC

60

25ºC

40

125ºC

20 VIN = 0V

30

40

0 0

46

10

20

VB (V)

■ Saturation Voltage of Output Transistor

30

40

0 0

46

20

30

40

46

VB (V)

■ Overcurrent Protection Characteristics (Ta=–40ºC)

■ Overcurrent Protection Characteristics (Ta=25ºC) 20

20 Ta = 125ºC

VB = 16V VB = 6V

10

VB (V)

1.5

VB = 18V

15

VB = 18V

15

25ºC

VO (V)

1.0

VO (V)

VCE (sat) (V)

80 25ºC

10

0 0

VIN = 5V

100

Ta = –40ºC

40

IB (mA)

Iq (mA)

Ta = –40ºC 25ºC 125ºC

■ Circuit Current (dual circuit) VIN = 5V

14V

10

14V

10

0.5 –40ºC

5

5

6V

6V 0

0

1

2

0

3

0

1

2

IO (A)

3

0

4

0

1

2

IO (A)

■ Overcurrent Protection Characteristics (Ta=125ºC)

■ Threshold Characteristics of Input Voltage Ta = 125ºC

4

■ Input Terminal Source Current

VB = 14V IO = 1A

15

20

3

IO (A)

25ºC

VB = 14V

1.0

–40ºC

VB = 18V

0.8

15

IIN (mA)

VO (V)

VO (V)

10 14V 10

0.6 Ta = 125ºC 25ºC –40ºC

0.4

5 5

0.2

6V

0

0

1

3

2

0

4

0

1

IO (A)

VIN (V)

■ Input Terminal Sink Current

0

0

2

4

6

8

10

VIN (V)

■ Saturation Voltage of DIAG Output

VB = 14V VIN= 0V

1.0

3

2

0.3 VB = 14V IDIAG = 3mA

VDL (V)

IINL (µA)

0.2 0.5

0.1

0 –50

0

50

Ta (ºC)

100

150

0 –50

0

50

100

150

Ta (ºC)

25

High-side Power Switch ICs [With Diagnostic Function] SI-5151S


● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

16.9 ±0.3

4 ±0.2

7.9 ±0.2

2.8 ±0.2

20 max

Features

2.6 ±0.1

a

Symbol

0.94 ±0.15

(Ta=25ºC)

Ratings

Unit


VB

40

V


VIN

–0.3 to VB

V

DIAG terminal voltage

VDIAG

6

V

R-end

Conditions

+0.2

+0.2

0.45 –0.1

0.85 –0.1

P1.7 ±0.1 • 4 = 6.8

VCE

40

V

IO

1.8

A

PD1

18

W

With infinite heatsink (Tc = 25ºC)

PD2

1.5

W

Stand-alone without heatsink (Tc = 25ºC)


Tj

–40 to +125

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +125

ºC

Collector-emitter voltage Output current

Power Dissipation

3.6 ±0.5

Parameter

2.9 –0.3


+0.2

b

4 ±0.6

1. GND 2. VIN 3. VO 4. DIAG 5. VB


(Forming No. 1123)

Standard Circuit Diagram VB 5

Electrical Characteristics Symbol


VBopr


min

VCE (sat)

Output leak current

IO, leak

typ

6.0

Iq


VO

(Ta=25ºC unless otherwise specified)

Ratings

5

max

Unit

SI-5151S

Conditions VIN 2

30

V

12

mA

0.5

V

1.0

V

2

mA V

VBopr = 6 to 16V VBopr = 6 to 16V

LS-TTL or CMOS

IO 1.0A, VBopr = 6 to 16V

VCC

DIAG 4

VBopr = 14V, VIN = 0V

PZ

3

5.1kΩ

1

Load

Parameter

IO 1.8A, VBopr = 6 to 16V VCEO = 16V

Output ON

VIH

2.0

VB

Output OFF

VIL

–0.3

0.8

V

Output ON

I IH

1

mA

VIN = 5V VIN = 0V

GND

Truth table VIN VO

Input voltage

H

H

L

L

Input current Output OFF

I IL

–0.1

mA


IS

1.9

A


TTSD

125


Ropen

VBopr = 14V, VO = VBopr –1.5V

Diagnostic Function ºC

145 30

kΩ

VBopr = 6 to 16V

TON

8

30

µs

VBopr = 14V, IO = 1A

TOFF

15

30

µs


Output transfer time 6

V

VCC = 6V

VDL

0.3

V

VCC = 6V, IDD = 2mA

TPLH

30

µs


TPHL

30

µs


VDH

4.5

DIAG output voltage

DIAG output transfer time Minimum load inductance

L

1

Normal

Shorted load

Overheat

Normal

VIN VO DIAG

mH VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

Mode


26

Open load

Normal


Electrical Characteristics ■ Quiescent Circuit Current

■ Circuit Current

10

■ Saturation Voltage of Output Transistor 1.0

40 Ta = --40ºC

30

25ºC

--40ºC

20

VCE (sat) (V)

95ºC

5

IB (mA)

Iq (mA)

Ta = 25ºC Ta = 95ºC

V B= 6 to 16V 95ºC

0.5

--40ºC

10 25ºC

0 0

10

20

30

0

40

0 0

10

20

VB (V)

50

0

14

14 VB = 14V

12

10

VO (V)

VO (V)

8

8

8

6

6

6

4

4

4

2

2

2

0

0

0

1

2

0 0

3

1

IO (A)

2

0

3

2

3

IO (A)

■ Input Current (Output ON)

20

■ Input Current (Output OFF) 2

1.0

15

1

IO (A)

■ Threshold input voltage Ta = 95ºC

VB = 14V

12

10

10

3

16

14 VB = 14V

2


16

12

1

IO (A)


16

VO (V)

40

VB (V)

■ Overcurrent Protection Characteristics (Ta= –40ºC)

VIN = 0V VB = 14V

VIN = 5V VB = 14V

25ºC –40ºC

10

IIL (µA)

VB = 16V I O = 1A

IIH (mA)

VO (V)

30

0.5

1

5

0 –40

0 0

1

2

2.2

0

50

VIN (V)

Ta (ºC)


0

50

100

Ta (ºC)

16 VB = 14V

Vo

14

0.1

12

6

10

5

DIAG (V)

VO (V)

VDG (sat) (V)

0 –40


0.2

8 6

0 –40

100

DIAG VB = 14V IO = 10mA

4 3

4

2

2

1

0 0

50

Ta (ºC)

100

0

50

100

150

Ta (ºC)

27



● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

16.9 ±0.3

4 ±0.2

7.9 ±0.2

2.8 ±0.2

20 max

Features

2.6 ±0.1

a 2.9 –0.3

+0.2

b

0.94 ±0.15

Parameter

R-end

(Ta = 25ºC)

Symbol

Ratings

Unit


VB

40

V


VIN

–0.3 to VB

V


VDIAG

6

V

VCE

40

V

Conditions

+0.2

+0.2

0.45 –0.1

0.85 –0.1


P1.7 ±0.1 • 4 = 6.8

4 ±0.6


IO

1.8

A

PD1

22

W

With infinite heatsink (Tc=25ºC)

PD2

1.8

W



Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

3.6 ±0.5



(Forming No. 1123)

Power Dissipation

Standard Circuit Diagram VB 5 VO


SI-5152S

Ratings Parameter

Symbol


VBopr


min 6.0

Iq


VCE (sat)

Output leak current

IO, leak

typ

5

max

Unit

30

V

12

mA

0.5

V

1.0

V

2

mA

Conditions

VIN 2

VCC

DIAG 4


PZ

3

LS-TTL or CMOS

5.1kΩ

Load


1

IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

V

VBopr = 6 to 16V

Output OFF

VIL

–0.3

0.8

V

VBopr = 6 to 16V

Output ON

I IH

1

mA

VIN = 5V VIN = 0V

GND

Truth table VO

VCEO = 16V, VIN = 0V

VIN

Input voltage

H

H

L

L

Input current Output OFF

I IL

–0.1

mA


IS

1.9

A



TTSD

150

ºC

VBopr 6V

kΩ

VBopr = 6 to 16V


Normal

Ropen

30

TON

8

30

µs


TOFF

15

30

µs


IDIAG

100

µA

VCC = 6V, VBopr = 6 to 16V

VDL

0.3

V

VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

TPLH

30

µs


µs


Output transfer time DIAG output leak current Saturation voltage of DIAG output DIAG output transfer time TPHL Minimum load inductance

Diagnostic Function

L

30 1

mH

Open load

Overheat

Normal

VO DIAG

Mode Normal


Shorted load

VIN

Open load Shorted load Overheat

VIN L H L H L H L H

VO L H H H L L L L

DIAG L H H H L L L L

● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

28



■ Circuit Current

10

■ Saturation Voltage of Output Transistor 1.0

40 Ta = –40ºC

30 –40ºC 95ºC

5

25ºC

20

VCE (sat) (V)

IB (mA)

Iq (mA)


VB = 6 to 16V 95ºC

0.5

–40ºC

10 25ºC

0 0

10

20

30

0

40

0 0

10

20

VB (V)

■ Overcurrent Protection Characteristics (Ta = –40ºC)

0

16

16

14

14 VB = 14V

12

VO (V)

VO (V)

10

8

8

6

6

6

4

4

4

2

2

2

0 0

0

2

0 0

3

1

IO (A)

2

0

3

3


1.0

15

2

IO (A)


20

Ta = 95ºC

1

IO (A)

■ Threshold input voltage

3

VB = 14V

12

10

1

2


VB = 14V

8

1


10 VO (V)

50

IO (A)

14

VIN = 0V VB = 14V

VIN = 5V VB = 14V

25ºC –40ºC

10

IIL (µA)

VB = 16V IO = 1A

IIH (mA)

VO (V)

40

VB (V)

16

12

30

0.5

1

5

0 0

1

2

2.2

VIN (V)

0 –40

0

50

Ta (ºC)

100

0 –40

0

50

100

Ta (ºC)

■ Saturation Voltage of DIAG Output 0.2

VDL (V)

VB = 14V

0.1

0 –40

0

50

100

Ta (ºC)

29

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S


● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Built-in Zener diode ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

16.9 ±0.3

4 ±0.2

7.9 ±0.2

2.8 ±0.2

2.6 ±0.1

a 2.9 –0.3

+0.2

b

20 max

Features

0.94 ±0.15

R-end

Parameter

(Ta=25ºC)

Symbol

Ratings

Unit

VB

–13 to +40

V


VIN

–0.3 to VB

V


VDIAG

6

V

VCE

VB —VZ

V

IO

2.04

A

PD1

22

W


PD2

1.8

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC



+0.2

+0.2

0.45 –0.1

0.85 –0.1

Conditions

P1.7 ±0.1 • 4 = 6.8

4 ±0.6


Refer to "Surge clamp voltage" in Electrical Characteristics

3.6 ±0.5



(Forming No. 1123)

Power Dissipation Junction temperature


SI-5153S (Ta=25ºC unless otherwise specified)

VIN 2

Ratings Parameter

Symbol


VBopr

min 6.0

Iq


typ

5

max

Unit

30

V

12

mA V


VCE (sat)

0.47

Output leak current

IO, leak

2

mA

4

Conditions LS-TTL or CMOS

5.1kΩ

1

VBopr = 14V, VIN = 0V IO 2.05A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

V

VBopr = 6 to 16V

Output OFF

VIL

–0.3

0.8

V

VBopr = 6 to 16V

Output ON

I IH

mA

VIN = 5V

Output OFF

I IL

–0.1

mA

VIN = 0V


IS

2.05

A



TTSD

150

ºC

VBopr 6V

30

kΩ

VBopr = 6 to 16V

GND

Truth table VIN VO


Input voltage 1

VCC

DIAG

Load


3

H

H

L

L

Input current


Diagnostic Function Normal

Open load

Shorted load

Overheat

Normal

VIN Ropen TON

8

30

µs


TOFF

15

30

µs


6

V

VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA

Output transfer time VDH

4.5

VO DIAG

DIAG output voltage VDL

0.3

V

TPLH

30

µs


TPHL

30

µs


DIAG output transfer time Minimum load inductance Surge clamp voltage

*1

L

1

VZ

28

mH 34

40

V

IC = 5mA

Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = –13V, one minute. * This driver is exclusively used for ON/OFF control.

30

VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

Mode

Normal



■ Circuit Current

10

■ Saturation Voltage of Output Transistor 2

50

40

Ta = –40ºC

5

25ºC

VCE (sat) (V)

IB (mA)

Iq (mA)

Ta = –40ºC 30 25ºC 20

150ºC

Ta = 125ºC

1

VB = 6 to 16V

150ºC

25ºC

10

0 0

10

20

0 0

40

30

–40ºC

10

20

30

0

40

0

1

3

2

VB (V)

VB (V)

IO (A)


■ Overcurrent Protection Characteristics (Ta =25ºC)


20

20

20

VB = 18V

VB = 18V

VB = 18V 15

15

15

10

14V 10

8V

5

0

0

1

2

3

4

0

5

5

0

1

3

2

IO (A)

4

0

5

0

1

5

0.8

4

0.6

3

I IL (µA)

I IH (mA)

10

VB = 14V VIN = 0V

VB = 14V VIN = 5V

VB = 16V IO = 1A

5

■ Input Current (Output OFF)

1.0 Ta = 150ºC 25ºC –40ºC

4

IO (A)


20

3

2

IO (A)

■ Threshold Characteristics of Input Voltage

15

10

8V

8V 5

VO (V)

VO (V)

VO (V)

VO (V)

14V 14V

0.4

2

5 0.2

0

0

1

0 –50

2

1

0

VIN (th) (V)

50

100

0 –50

150

■ Output Terminal Leak Current

VB = 14V VDIAG = 5V IO = 10mA 15

0.3

VO (V)

VDL (V)

IO leak (mA)

0.4

0.2

Ta (ºC)

100

150

0 –50

VO

10

VDIAG

5

0.1

50

150

20

VB = 14V IDIAG = 2mA

1

100


0.5

VB = 14V

0

50

Ta (ºC)


2

0 –50

0

Ta (ºC)

0 0

50

Ta (ºC)

100

150

0

50

100

150

200

Ta (ºC)

31



● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Built-in Zener diode ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

16.9 ±0.3

4 ±0.2

7.9 ±0.2

2.8 ±0.2

20 max

Features

2.6 ±0.1

a 2.9 –0.3

+0.2

b

0.94 ±0.15

R-end

Absolute Maximum Ratings Symbol

Ratings

Unit

VB

–13 to +40

V


VIN

–0.3 to VB

V


VDIAG

6

V

VCE

VB –VZ

V

IO

2.5

A

PD1

22

W

With infinite heatsink (Tc =25ºC) Stand-alone without heatsink



+0.2

+0.2

Conditions

0.45 –0.1

0.85 –0.1

P1.7 ±0.1 • 4 = 6.8

4 ±0.6


Refer to "Surge clamp voltage" in Electrical Characteristics

3.6 ±0.5

Parameter

(Ta=25ºC)


(Forming No. 1123)

Power Dissipation PD2

1.8

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC



SI-5154S

(Ta=25ºC unless otherwise specified) VIN 2

Ratings Symbol


VBopr

min 6.0

Iq

Quiescent circuit current Saturation voltage of output transistor

VCE (sat)

Output leak current

IO, leak

Output ON

VIH

typ

5

2.0

max

Unit

Conditions

4

30

V

12

mA

0.3

V


0.72

V


2

mA

VB

V

LS-TTL or CMOS


0.8

VBopr = 6 to 16V

GND

H

H

L

L

VBopr = 6 to 16V

Output OFF

VIL

Output ON

I IH

mA

VIN = 5V

Output OFF

I IL

–0.1

mA

VIN = 0V


IS

2.6

A



TTSD

150

ºC

VBopr 6V

30

kΩ

VBopr = 6 to 16V

1

V

5.1kΩ

1

Truth table VIN VO


Input voltage –0.3

VCC

DIAG

Load

Parameter

3

Input current


Ropen TON

8

30

µs


TOFF

15

30

µs


Output transfer time 6

V


VDL

0.3

V


TPLH

30

µs


TPHL

30

µs


VDH

4.5

DIAG output voltage

DIAG output transfer time Minimum load inductance Surge clamp voltage

*1

L

1

VZ

28

mH 34

40

V

Normal

Open load

IC = 5mA

Shorted load

Overheat

VIN VO DIAG

Mode Normal

Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = –13V, one minute. * This driver is exclusively used for ON/OFF control.

32

Diagnostic Function


VIN L H L H L H L H

VO L H H H L L L L

DIAG L H H H L L L L


Normal



■ Circuit Current

2

Ta= –40ºC 25ºC 150ºC

5

40

Ta = –40ºC

30

25ºC

20

VCE (sat) (V)

50

IB (mA)

Iq (mA)

10


150ºC

Ta = 125ºC

1

25ºC

VB = 6 to 16V 10

0 0

10

20

30

–40ºC

0 0

40

10

20

30

0

40

0

1

3

2

VB (V)

VB (V)

IO (A)




20

20

20

VB = 18V 16

8

16

8

8V 4

1

3

2

4

8

8V

4

6V

4

0

5

0

1

2

IO (A)

3

4

0

5

6V

0

1

2

IO (A)


I IH (mA)

10

VB = 14V VIN = 0V

0.8

4

0.6

3

I IL (µA)

15

5

5

VB = 14V VIN = 5V

Ta = 125ºC 25ºC –40ºC

4


1.0

VB = 16V IO = 1A

3

IO (A)


20

VO (V)

12

8V 6V

0

14V

14V

12

VO (V)

14V

12

VO (V)

VO (V)

16

0

VB = 18V

VB = 18V

0.4

2

5 0.2

0

0

1

0 –50

2

1

0

VIN (th) (V)

50

100

0 –50

150


0.3

0.2

Ta (ºC)

150

0 –50

VO

10

VDIAG

5

0.1

100

VB = 14V VDIAG = 5V IO = 10mA

15

VO (V)

VDL (V)

IO leak (mA)

0.4

50

150

20


1

100


0.5

VB = 14V

0

50

Ta (ºC)


2

0 –50

0

Ta (ºC)

0 0

50

Ta (ºC)

100

150

0

50

100

150

200

Ta (ºC)

33



● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

16.9 ±0.3

4 ±0.2

7.9 ±0.2

2.8 ±0.2

20 max

Features

2.6 ±0.1

a 2.9 –0.3

+0.2

b

0.94 ±0.15

Parameter

R-end

(Ta=25ºC)

Symbol

Ratings

Unit


VB

–13 to +40

V


VIN

–0.3 to VB

V


VDIAG

6

V

VCE

40

V

Conditions

+0.2

+0.2

0.45 –0.1

0.85 –0.1


P1.7 ±0.1 • 4 = 6.8

4 ±0.6


IO

2.5

A

PD1

22

W


PD2

1.8

W



Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

3.6 ±0.5



(Forming No. 1123)

Power dissipation



SI-5155S

Ratings Parameter

Symbol


VBopr


min 6.0

Iq


VCE (sat)

Output leak current

IO, leak

typ

5

max

Unit

30

V

12

mA

0.3

V

0.72

V

2

mA

VIN 2

Conditions

LS-TTL or CMOS

VCC

DIAG 4


PZ

3

5.1kΩ

1

Load


IO 1.0A, VBopr = 6 to 16V IO 2.5A, VBopr = 6 to 16V

Output ON

VIH

2.0

VB

V

VBopr = 6 to 16V

Output OFF

VIL

–0.3

0.8

V

VBopr = 6 to 16V

Output ON

I IH

1

mA

VIN = 5V

Output OFF

I IL

–0.1

mA

VIN = 0V

IS

2.6

A


TTSD

150

ºC

VBopr 6V

kΩ

VBopr = 6 to 16V

GND

Truth table VIN VO


Input voltage

H

H

L

L

Input current Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor

Ropen

30

TON

8

30

µs


TOFF

15

30

µs


6

V


Output transfer time VDH

4.5

Diagnostic Function Normal

Open load

Shorted load

Overheat

VO L H H H L L L L

DIAG

Normal

VIN VO

DIAG output voltage VDL

0.3

V


TPLH

30

µs


µs


DIAG output transfer time TPHL Minimum load inductance

L

30 1

mH


DIAG

Mode Normal Open load Shorted load Overheat

VIN L H L H L H L H

L H H H L L L L


34



■ Circuit Current

2

Ta= –40ºC 25ºC 150ºC

5

40

Ta = –40ºC

30

25ºC

20

VCE (sat) (V)

50

IB (mA)

Iq (mA)

10


150ºC

Ta = 125ºC

1

25ºC

VB = 6 to 16V 10

0 0

10

20

0 0

40

30

–40ºC

10

20

30

0

40

0

1

3

2

VB (V)

VB (V)

IO (A)



■ Overcurrent Protection Characteristics (Ta =125ºC)

20

20

20

VB = 18V 16

8

16

8

8V 4

1

3

2

4

8

8V

4

6V

6V

4

0

5

0

1

2

IO (A)

3

4

0

5

0

1

2

3

IO (A)


5

10

0.8

4

0.6

3

I IL (µA)

I IH (mA)

VB = 16V IO = 1A

VB = 14V VIN = 0V

VB = 14V VIN = 5V

15

5


1.0 Ta = 125ºC 25ºC –40ºC

4

IO (A)


20

VO (V)

12

8V 6V

0

14V

14V

12

VO (V)

14V

12

VO (V)

VO (V)

16

0

VB = 18V

VB = 18V

0.4

2

5 0.2

0

0

1

0 –50

2

1

0

VIN (th) (V)

50

100

0 –50

150


0.3

0.2

Ta (ºC)

150

0 –50

VO

10

VDIAG

5

0.1

100

VB = 14V VDIAG = 5V IO = 10mA

15

VO (V)

VDL (V)

IO leak (mA)

0.4

50

150

20


1

100


0.5

VB = 14V

0

50

Ta (ºC)


2

0 –50

0

Ta (ºC)

0 0

50

Ta (ºC)

100

150

0

50

100

150

200

Ta (ºC)

35

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

External Dimensions (unit: mm) 31 ±0.2

Ellipse 3.2 ±0.15 • 3.8

4.8 ±0.2

24.4 ±0.2

1.7 ±0.1

16 ±0.2 9.9 ±0.2

3.2 ±0.15

12.9 ±0.2

● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use (VCE (sat) 0.2V) ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit ● Built-in independent overcurrent and thermal protection circuit in each circuit ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed

a b

2.45 ±0.2

6.4 ±0.5

Features

+0.2

+0.2

+0.2

1.15 –0.1

0.55 –0.1

0.65 –0.1

14 • P2.03 ±0.1 = (28.42)

Absolute Maximum Ratings Parameter Power supply voltage

(Ta=25ºC)

Symbol

Ratings

Unit

VB

–13 to +40

V

Drive terminal applied voltage

VD

–0.3 to VB

V


VIN

–0.3 to +7.0

V


VDIAG

–0.3 to +7.0

V


IDIAG

–3

mA

Voltage across power supply and output terminal

VB–O

VB –34

V

Voltage across power supply and drive terminal

VB–D

–0.4

V

Conditions

31.3 ±0.2


1 23

Output current

IO

1.5

A

Output reverse current

IO

–1.8

A

15

Equivalent Circuit Diagram VB

a

Electrostatic resistance

±250

ES/A

V

C = 200pF, R = 0Ω Stand-alone without heatsink, all circuits operating

Power Dissipation

PD

4.8

W


Tj

–40 to +150

ºC


TOP

–40 to +115

ºC

Storage temperature

Tstg

–50 to +150

ºC



VBopr

Quiescent circuit current (per circuit) Circuit current (per circuit)

MIC

GND

Unit

16

V

Iq

0.8

1.6

mA

Lo output

IB

19.3

mA

Tj = 25ºC

VINth

0.8

VIN

3.7

Lo output

VIN

3.0

VB

V

VCC

V 1.5

I IN

–1.0

Input current Lo output

I IN VCE (sat)

mA

VCE (sat)

1.0

Output terminal sink current

IO (off)

2.5

Surge clamp voltage

VB–O

5

VIN = 5V

V

5

mA

Tj = 25ºC, VCEO = 14V

V

34

39

V

Tj = 25ºC, IC = 10mA

34

40

V

IC = 5mA IDGH = –2mA, VBopr = 6 to 16V

Saturation voltage of DIAG output

VDL

0.4

V


IDGH

–100

µA


Ropen

5.5

kΩ


IS

1.6

A

VO = VBopr –1.5V

ºC

VBopr 6V

30

µs

IO = 1A

100

µs

IO = 1A

TPLH

30

µs

IO = 1A

µs

IO = 1A

Maximum ON duty

100

Lo

1.0

D(ON)

0

mH 60

SLA2501M

4

FLT2 8

Diagnostic Function

TON

TPHL Minimum load inductance

FLT1 IN2

VCC = 7V

TOFF DIAG output transfer time

3 9 14 D1 D2 D3

FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15


28

1 VB IN1

12 IN3


29

TTSD

7

VIN = 0V

0.2


36

V

µA

100



e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit


Input voltage Hi output

FLT

a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit

Conditions

max

Hi output

Threshold input voltage

OUT D

typ

6.0

e g

f

(VBopr =14V, Tj= –40 to +150ºC unless otherwise specified)

min

d c

Ratings Parameter

b

VIN

%

Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.

Normal

VIN VO VDIAG

Open load

Shorted load

Overheat

Normal


Electrical Characteristics ■ Quiescent Circuit Current (single circuit)


5


40

1.0

VIN = 5V

VIN = 0V

V IN = 5V V B = 6 to 16V

Ta = –40ºC

2

Ta = 25ºC

Ta =125ºC VCE (sat) (V)

3

Ta =150ºC

30

Ta = –40ºC Ta = 25ºC Ta = 125ºC

IB (mA)

Iq (mA)

4

20

Ta = 125ºC

Ta = –40ºC 0.5

Ta = 25 ºC 10

1

0 0

10

20

30

0

40

0

10

20

30

0

40

0

1

2

3

3.5

VB (V)

VB (V)

IO (A)



■ Overcurrent Protection Characteristics (Ta=125ºC) 20

20

20

0 1

2

3

VO (V)

10

0

10

0

1

2

I OUT = 1A

2

0

2

3

4


V B = 14V

V IN = 0V

V IN = 0V

IIL (µA)

25ºC –40ºC

3

0.5

0 --50

4

0

50

100

10

0 –50

125

0

Ta (ºC)

VIN (V)


■ Output Reverse Current

V B = 14V VIN = 5V I FLT = 3 (mA)

50

100

125

Ta (ºC)

■ Thermal Protection

1.4

0.3

1

IO (A)

VB = 14V

0 1

5

1.0

10

0

4


IIH (mA)

VO (V)

Ta = 125ºC

3

IO (A)

■ Threshold Input Voltage VB = 16V

10

0

0

4

IO (A)

20

VB = 14V

V B = 14V

VO (V)

VO (V)

VB = 14V

20

10

V B = 16V IO = 10mA

1.2

VO

1.0

0.1

Ta = 25ºC 0.6

Ta = 125ºC

10

VFLT (V)

Ta = --40ºC

0.8

VO (V)

VF (V)

VDL (V)

0.2

V FLT 5

0.4 0.2

0 –50

0

50

Ta (ºC)

100

125

0

0

1

2

IF (A)

3

4

0 0

60

100

160

180

Ta (ºC)

37



Features ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use (VCE (sat) 0.5V) ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed

31±0.2

Ellipse 3.2 ±0.15 • 3.8

4.8 ±0.2

24.4 ±0.2

1.7 ±0.1

16 ±0.2 9.9 ±0.2

12.9 ±0.2

3.2 ±0.15

a

2.45 ±0.2

6.4 ±0.5

b


+0.2

(Ta=25ºC)

Symbol

Ratings

Unit


VB

–13 to +40

V


VIN

–0.3 to +7.0

V


VDIAG

–0.3 to +7.0

V


IDIAG

3

mA

Output current

IO

1.2

A

Power Dissipation

PD

4.8

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–50 to +150

ºC

+0.2

1.15 –0.1

+0.2

0.55 –0.1

0.65 –0.1

14 • P2.03 ±0.1 = (28.42)

Conditions

31.3 ±0.2


1 23

15

Stand-alone operation without heatsink; all circuits operating

Equivalent Circuit Diagram SLA2502M The MIC is bound by the dotted lines.

8

VB

Pre. Reg.


NI1

(VBopr =14V, Ta=25ºC unless otherwise specified)

DIAG1

2

Drive

CONT. 11kΩ typ.

3

O.C.P

DIAG DET

Parameter

Symbol


VBopr

min

typ

max 16

6.0

Unit

Conditions NI2

V

Iq VINth

Hi output

I IN

Lo output

I IN

5 0.8

12

mA

3.0

V

1.0

mA

VIN = 5V

100

µA

VIN = 0V

Input current 0

VIN = 0V

1

6

Drive

CONT. 11kΩ typ.

5

O.C.P

DIAG DET

GND1

7

4

10

Drive

CONT. 11kΩ typ.

11

O.C.P

DIAG DET

VCE (sat)

Output terminal sink current Saturation voltage of DIAG output

0.5

V

IO (off)

2.0

mA

VDL

0.3

V

IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V

NI4

100

µA


Ropen

30

kΩ


IS

1.6

A

VO = VBopr –1.9V

TON

8

30

µs

IO = 1A

15

30

µs

IO = 1A

TPLH

10

30

µs

IO = 1A

TPHL

15

30

µs

IO = 1A


Out3

Drive

CONT. 11kΩ typ.

13

O.C.P

15

12

Out4

VDIAG = 5V

TOFF


14

DIAG DET

I DIAG = 3mA GND4

IDGH

9 T.S.D

DIAG4


Out2

Pre. Reg. NI3 DIAG3


Out1

T.S.D

DIAG2

Quiescent circuit current (per circuit) Threshold input voltage

Ratings

[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection


Note: * The rule of protection against reverse connection of power supply is VB = –13V, one minute (all terminals except VB and GND should be open).

VB PZ D1 Out

Diagnostic Function

SLA2502M IN

VCC DIAG 5.1kΩ

VB

Load

GND

3.0V

GND

GND

VIN

0.8V

Truth table VIN VO VOUT SHORT Is

OPEN OPEN

OVER VOLTAGE

H

L

L

GND

TSD

Note 1: A pull-down resistor (11kΩ typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product.

IO

GND VDIAG Normal

Shorted load

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

38

H


Electrical Characteristics ■ Circuit Current (single circuit)

■ Circuit Current (4 circuits)

60

(VB = 14V)

1.0

200 Ta = –40ºC

50

VB 150

Ta = –40ºC

125ºC

VCE (sat) (V)

30

IB (mA)

25ºC

40

IB (mA)


25ºC 100 125ºC

20 VIN = 0V

Ta =

25ºC

125ºC 0.5

–40ºC

50

10 VIN = 0V 0 0

10

20

30

40

0 0

46

10

20

VB (V)

0 0

46

1

IO (A)

■ Threshold Input Voltage


20

20

3

VB = 18V 15

125ºC

25ºC –40ºC

2

I IL (µA)

VO (V)

10

VB = 14V VIN = 0V

Ta =

15 14V

3

2

VB (V)


VO (V)

40

30

10

1 5

5

6V

0 0

1

3

2

0 0

4

1

50

VIN = 0V

20

VB = 14V


Ta = –40ºC 25ºC

Ta = –40V 25V 125V

Iq (mA)

0.2

VDL (V)

0.3

125ºC 0.2

150

■ Quiescent Circuit Current (dual circuit)

0.3

0.5

100

Ta (ºC)


■ Input Current (Output Hi)

0.4

0

VIN (V)

IO (A)

I IH (mA)

0 –50

3

2

10

0.1 0.1

0 0

VO shorted VO open 1

2

3

4

5

0 –50

6

0

50

100

0 0

150


20

15

25ºC

0.9

ROPEN (kΩ)

IOLEAK (mA)

5

46

Ta = –40ºC

1.0

TSD VB = 14V RL = 1.3kΩ

40

■ Open Load Detection Resistor

1.1

10

30

VB (V)

■ Output Terminal Leak Current (VO = 0V)

15

VO1 (V)

10

Ta (ºC)

VIN (V)

125ºC

0.8 0.7

10 Ta = 125ºC 25ºC 5

–40ºC

0.6 0

0.5 0

50

100

Ta (ºC)

150

200

0 5

10

15

VB (V)

20

25

5

10

15

20

VB (V)

39

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003


Features ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● DMOS 2ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits

12.2 ±0.2 +0.1

10.5 ±0.2

1.0 –0.05

16

Fin thickness

(Ta=25ºC)

Symbol

Ratings

Unit

8 +0.15

1.27 ±0.25


VB

35

V


VIN

–0.3 to 7

V mA

I IN

5

DG terminal voltage

VDG

–0.3 to 7

V

DG terminal current

I DG

5

mA

Drain to source voltage

Input terminal current

1

Conditions

VDS

VB –45

V

Output current

IO

1.8

A

Power dissipation

PD

2

W

Source to drain Di forward current

IF

0.8

A

Channel temperature

Tch

150

ºC


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

0.4 –0.05

2.5±0.2

Parameter

2.0 –0.8


+0.2

7.5 ±0.2

9

+0.15

0.25–0.05

Block Diagram (for one channel) VB

Ta=25ºC Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG

Electrical Characteristics Symbol VB (opr)

min

typ

Unit

max

Open/Short Sense

Conditions GND

35

Iq

Quiescent circuit current Output ON resistance

1

mA

VIN=0V, VOUT=0V

200

mΩ

IO=1A

300

mΩ

IO=1A, Ta=80ºC VOUT=0V

RDS (ON) 50

100

µA

VIHth

1.4

2.0

3.0

V

Ta= –40 to +105ºC

VILth

1.0

1.8

V

Ta= –40 to +105ºC

IO, leak

Output leak current Input threshold Output ON voltage Output OFF Output ON

70

I IH I IL


IS

12 1.9

3


7,8

OUT1

15,16

µA

200

Inpup current Output OFF

OUT

V

VIN=5V

VB

1

µA

VIN=0V

(2, 3) 9

A

VOUT =VO –1.5V

(10,11)

OUT2 5V

SPF5003

DG1

6

5V

Load

5.5

DG2

Load

Parameter Operating power supply voltage

DG Logic

(VB=14V, Ta=25ºC unless otherwise specified)

Ratings

14

Load open detection threshold voltage

*1

TTSD

155

ºC

165 3

4.5

V

70

140

µs

RL=14Ω, VO= –5V

TOFF

35

90

µs

RL=14Ω, VO •10%

20

µA

VDG= 5.5V

VDGL

0.15

0.5

V

IDG=1.6mA

TPLH

70

140

µs

TPHL

45

120

µs

1.5

I DG

Low level DG output voltage DG output transfer time Note:

*

*1

5

Vin 2 (7V max)

13

4

12 GND

RIN

C P U

TON

Vopen

Output transfer time DG leak current

Vin 1 (7V max)

VOUT=0V

RIN

IN and RDG are needed to protect CPU and SPF5003 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 9Pin short from the fin to be plated by solder.

Timing Chart VIN OFF

VIN ON

Normal

VB

1. Transient time is showed Wave Form below.

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

VOUT

Recommended Operating Conditions (for one channel)

Wave Form

Internal current limit

min

TSDON

IOUT

Ratings Parameter

max

Unit

TSDOFF

VIN DG


5.5

16

V

VIH

4

5.5

V

VIL

–0.3

0.9

V

1

A

High inpidance

VOUT –5V Output transfer time

IO

VOUT • 10%

VOUT TON VDG • 90%

VDG • 10%

VDG

40

RIN

10

20

kΩ

RDG

10

20

kΩ

Mode

TOFF

Normal DG output transfer time

TPLH

RDG

Thermal shutdown operating temperature

A

5

RDG

ILim


TPHL


VIN H L H L H L H L

DG H L H H L L L L

VO H L H H L (Limiting) L L L

Normal

TSD Overheat

41



Features ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● DMOS 2ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits

17.28±0.2 +0.1

15.58±0.2

1.0 –0.05 13

7.5±0.2

a

Symbol

Ratings

Unit


VB

35

V


VIN

–0.3 to 7

V

I IN

5

mA

VDG

–0.3 to 7

V mA

Input terminal current DG terminal voltage

2.0–0.8

(Ta=25ºC)

DG terminal current

I DG

5


VDS

VB –45

V

Output current

IO

2.5

A

Power dissipation

PD

2.7

W


IF

0.8

A

Channel temperature

Tch

150

ºC


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

Conditions

1

12 +0.15

1.27±0.25

0.4 –0.05

2.5±0.2

Parameter

+0.2

b


10.5±0.3

24

Fin thickness

+0.15

0.25–0.05



Ta=25ºC Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG

Parameter

Symbol


VB (opr)

DG Logic


Ratings min

typ

max

Unit

Open/Short Sense

Conditions GND

35

Iq


1

mA

150

mΩ

IO =2A

250

mΩ

IO =1A, Ta=80ºC

µA

VOUT =0V

VIN=0V, VOUT=0V

RDS (ON)

Output ON resistance

50

IO, leak

Output leak current Output ON

VIH

Output OFF

VIL

Output ON

I IH

3.0

2.0

OUT

V

V


Ta= –40 to +105ºC

Input voltage Inpup current


IS

1.0

V

70

µA

2.6

ILim


1.8

10

2,3

Ta= –40 to +105ºC

A

VOUT =VO –1.5V

A

VOUT =0V

OUT1

14,15

VIN =5V

VB

1

(4,5,6) 13

OUT2 5V

SPF5004

DG1

24

5V

Load

5.5

DG2

(16,17,18)

Load


12

Vopen

155

165

ºC

3

V

TON

165

TOFF

60

µs

I DG

Low level DG output voltage

20

µA

VDGL

0.15

V

TPLH

70

µs

TPHL

45

µs

DG output transfer time

9

(7V max)

GND

RIN

C P U

µs

Output transfer time DG leak current

Vin 1 (7V max)

21

RIN

VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder.

VDG =5.5V IDG =1.6mA


VIN ON

Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

Recommended Operating Conditions (for one channel) Unit

min

max

5.5

16

V

VIH

4

5.5

V

VIL

–0.3

0.9

V

1.15

A


IO

VOUT Internal current limit

Ratings

Parameter

TSDON

IOUT

TSDOFF

DG

High inpidance

Mode Normal

RIN

10

20

kΩ

Open load

RDG

10

20

kΩ

Shorted load Overheat

42

RDG

TTSD


11

RDG


23 Vin 2

VIN H L H L H L H L

DG H L H H L L L L


Normal

TSD Overheat

43



Features

17.28±0.2 +0.1

15.58±0.2

1.0 –0.05

24

Fin thickness

13

7.5±0.2

a

Parameter

Symbol

(Ta=25ºC)

Ratings

Unit


VB

35

V


VIN

–0.3 to 7

V

I IN

5

mA

VDG

–0.3 to 7

V mA

Input terminal current DG terminal voltage DG terminal current

I DG

5


VDS

VB –45

V

Output current

IO

1.8

A

Power dissipation

PD

2.7

W


IF

0.8

A

Channel temperature

Tch

150

ºC


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

2.0–0.8

1

Conditions

12 +0.15

1.27±0.25

0.4 –0.05

2.5±0.2


+0.2

b

10.5±0.3

● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● DMOS 3ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits

+0.15

0.25–0.05



Ta=25ºC, all circuit operating Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG

Electrical Characteristics Symbol min

typ

Unit

Open/Short Sense

Conditions

max GND

35


1

mA

200

mΩ

IO =1A

350

mΩ

IO =1A, Ta=80ºC VOUT =0V

RDS (ON)

VIN =0V, VOUT =0V

50

100

µA

Output ON

VIHth

1.4

2.0

3.0

V

Ta= –40 to +105ºC

Output OFF

VILth

1.0

1.8

V

Ta= –40 to +105ºC

Output ON

I IH

IO, leak

Output leak current

70

200

Inpup current Output OFF Overcurrent protection starting current Internal current limit

ILim


TTSD


Vopen

155 1.5

1

OUT1

13 VB

OUT2

5,6 10,11 20,21

OUT3

VIN =5V

SPF5007

5V 4

DG1

VIN =0V

3

A

VOUT =VO –1.5V

5

A

VOUT =0V

165

ºC

RDG

3

4.5

V

RIN

70

140

µs

12 1.9

µA


µA

I IL IS

OUT

V

9

DG2 GND1 GND2 2 7

IN1 3

GND3 17

IN2 8

IN3 18

19

DG3

Load

5.5

Iq


Input threshold voltage

VB (opr)

Load


Load

Parameter

DG Logic


Ratings

RDG RDG

RIN

C P U

RIN

TON Output transfer time TOFF

35

I DG

DG leak current Low level DG output voltage

RL=14Ω, VOUT =VB –5V

90

µs

RL=14Ω, VB •10%

20

µA

VDG =5.5V

VDGL

0.15

0.5

V

TPLH

70

140

µs

TPHL

45

120

µs

DG output transfer time

IDG =1.6mA

IN and RDG are needed to protect CPU and SPF5007 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder.


VIN ON

Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

VOUT

Recommended Operating Conditions (for one channel) Parameter

max

Unit

TSDOFF

DG

High inpidance


5.5

16

V

VIH

4

5.5

V

VIL

–0.3

0.9

V

Normal

1

A

Open load

RIN

10

20

kΩ

Shorted load

RDG

10

20

kΩ

Overheat

IO

44

IOUT

Ratings min

Internal current limit TSDON

Mode

VIN H L H L H L H L

DG H L H H L L L L


Normal

TSD Overheat

45

High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017


Features ● Internal current sense resistor ● High accuracy current monitor output (sample & hold function) ● Built-in overcurrent and thermal protection circuits

14.74±0.2 +0.1

13.04±0.2

1.0 –0.05 11

Ratings

Unit

Power supply voltage 1

VB

0 to 32

V


Vcc

–0.5 to 7.0

V


VB

0 to 40

V

Current sensing voltage Output terminal voltage Input terminal voltage

b

(Ta=25ºC)

Symbol

Vsense+

–0.8 to 6

Vsense–

Vsense+±Io • Rsense

V

VOUT

–2 to 32

V

–0.5 to 7.0

V

VPWM

Conditions

1

10 +0.15

1.27±0.25

0.4 –0.05

2.5±0.2

Parameter

2.0±0.2


7.5±0.2

a

10.5±0.3

20

Fin thickness

VB terminal, t = 1 min

+0.15

0.25–0.05

a) Part No. b) Lot No.

VHold Output current

IOUT

2.0

A

Power dissipation

PD

2.4 to 5.0

W

Storage temperature

Tstg

–40 to +150

°C

Channel temperature

Tch

150

°C

Block Diagram (for one channel) Vcc

Depends on surface-mount board pattern

VB 17 clamp

Parameter

Symbol

(VB=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent

typ

TSD

OCP

Operating power supply voltage 1

VB min VB

Sense+

70kΩ

max

Unit

Conditions

18

CMOS Logic

Hold


VCC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2 PWM terminal input voltage

14

lamp

Hold terminal input voltage


Current sensing resistance

70

Vcc = 5V, VPWM = 0V, One circuit equivalent

0.2

mA

Vcc = 5V, VPWM = 0V

V

110

Ttsd

150

Io

0.2

Vcc = 5V, VPWM = 5V, Active H * 3

Ω

IOUT = 1A

0.21

Ω

IOUT = 1A, Ta = 125°C

0.21

Ω

IOUT = 1A

0.25

Ω

IOUT = 1A, Ta = 125°C

A

*4

A

*1 Io = 0A, Vcc = 5V

0.2

V

0.500

0.512

V

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

2.925

3.000

3.075

V

5

mA

Io = 1A, Vcc = 5V, VSH = 0V

mA


15

µs

t off

15

µs

tr

100

µs

tf

t shd

Hold time after inputting hold

t shh

S/H settling time

VCC

500

Controlling microcomputer CPU

2 3 5

1kΩ 0.01 µF

VB

17

Sense+

Hold

Sense –

50

µs

650

µs

1

µs

2

µs µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

80

µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C

t stt

20

D1

5.1 kΩ

LG

C

6

4

D2

Timing Chart Ordinary operation (auto hold)

Thermal protection

Ordinary operation (external hold)

VPWM

Icoil

*1 500 to 650 usec

Io = 0.5A, Vcc = 5V,

70

18

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

VS/H

C1 = 0.033µF

19

S/H

Vout

Io = 0.5A, Vcc = 5V

OUT

SFP5017

PWM

C1

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70kΩ typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

46

LG


°C 1.2

–6

Current monitor output delay time

6

C

Vcc = 5V

µA

t on

t sh

4


0.488

ISH

Current monitor output hold time

Vcc = 5V

110

Rsense

Operation circuit for current monitor output

Output fall time

*2

0.14 RDSon


Output rise time

Sense–

S/H

5

1

70

3.0


20

1.5

IHoldH

VSH

µA V

Is

Current monitor output current

mA

+ –

S/H

3.5


Current monitor output voltage

7.2

V

VHoldL Hold terminal input current

V

1.5

IPWMH VHoldH

16

*1

70kΩ

Sense R

3.5

VPWML PWM terminal input current

Minimum operation of OUT terminal.

5.0

Iqvcc VPWMH

V

6 10

OUT 19

PWM

3

Min. operating power supply voltage

S

Sense MOS

2

Ratings min

D

Charge Pump

OSC


SFP5017

1

*2

*1 500 to 650 usec

VHold

Truth table VPWM

L

H

VOUT

L

H

Overcurrent protection

Ordinary operation (auto hold)

47

High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018


Features ● Internal current sense resistor ● High accuracy current monitor output (sample & hold function) ● Built-in overcurrent and thermal protection circuits

12.2±0.2

+0.2

Conditions

VB

0 to 32

V

1

Vcc

–0.5 to 7.0

V

1.27±0.25


VB

0 to 40

V


Vsense+

–0.8 to 6

Vsense–

Vsense+±Io • Rsense

V

VOUT

–2 to 32

V

–0.5 to 7.0

V

VPWM

2.0 –0.8

Unit


Output terminal voltage

9

(Ta=25ºC)

Ratings


Current sensing voltage

Fin thickness

8 +0.15

0.4 –0.05

2.5±0.2

Symbol

1.0 –0.05

7.5±0.2


+0.1

10.5±0.2 16

VB terminal, t = 1 min

+0.15

0.25–0.05

VHold Output current

IOUT

2.0

A

Power dissipation

PD

2.0

W

Storage temperature

Tstg

–40 to +150

°C

Channel temperature

Tch

150

°C

Block Diagram (for one channel) Vcc

Depends on surface-mount board pattern

2

VB 11 clamp


D

Charge Pump

OSC

TSD


S

Sense MOS

OCP

OUT 14

PWM 3

Parameter

Symbol

70kΩ

Ratings min

typ

Sense+

max

Unit

13

CMOS Logic

Conditions

Hold

lamp

4 70kΩ

Min. operating power supply voltage Operating power supply voltage 1

VB min VB


VCC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2 PWM terminal input voltage

10

14

Hold terminal input voltage


Current sensing resistance

70

Vcc = 5V, VPWM = 0V

0.2

mA

Vcc = 5V, VPWM = 0V

V

110

Ttsd

150

Io

0.2

µA


Ω

IOUT = 1A

0.21

Ω

IOUT = 1A, Ta = 125°C

0.21

Ω

IOUT = 1A

0.25

Ω

IOUT = 1A, Ta = 125°C

A

*4

A

*1 Io = 0A, Vcc = 5V

0.2

V

0.500

0.512

V

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

2.925

3.000

3.075

V

5

mA


mA


–6 15

µs

t off

15

µs

tr

100

µs

tf

Current monitor output delay time

t shd

Hold time after inputting hold

t shh

S/H settling time

500

3 4 6

1kΩ 0.01 µF

11

VB

Sense+

Hold

Sense–

50

µs

650

µs

1

µs

2

µs µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

80

µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125°C

t stt

D1

5.1 kΩ

LG

C 5

7

D2

Timing Chart Ordinary operation (auto hold)

Thermal protection

Ordinary operation (external hold)

VPWM

Icoil

*1 500 to 650 usec

Io = 0.5A, Vcc = 5V,

70

15

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

VS/H

C1 = 0.033µF

14 13

S/H

Vout

Io = 0.5A, Vcc = 5V

OUT

SFP5018

PWM

C1

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70kΩ typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

48

Controlling microcomputer CPU

°C 1.2

t on

t sh

2

Vcc = 5V

0.488

ISH

Current monitor output hold time

*3

110

Rsense

Operation circuit for current monitor output

Output fall time

LG


Vcc = 5V Vcc = 5V, VPWM = 5V, Active H

7

C

0.14 RDSon


Output rise time

5

VCC

70

3.0


*2

1.5

IHoldH

VSH

µA V

Is

Current monitor output current

mA

Sense–

S/H

6

3.5


Current monitor output voltage

7.2

V

VHoldL Hold terminal input current

V

15

S/H

1.5

IPWMH VHoldH

16

*1

3.5

VPWML PWM terminal input current

Minimum operation of OUT terminal.

5.0

Iqvcc VPWMH

V

6

Sense R

+ –

*2

*1 500 to 650 usec

VHold

Truth table VPWM

L

H

VOUT

L

H

Overcurrent protection

Ordinary operation (auto hold)

49

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A


Features ● DMOS 4ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent, overvoltage and thermal protection circuits

12.2 ±0.2

(Ta=25ºC)

V

VB

40 37

V

VIN

–0.5 to +7.5

V

Output current

IO

1.8

A

Power Dissipation

PD

2

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC

Output avalanche capability

EAV

50

mJ

Output terminal voltage Input terminal voltage

Conditions

+0.2

Unit

1

*

2.0 –0.8

Ratings

8 +0.15

1.27±0.25

0.4 –0.05

2.5 ±0.2

Symbol

VOUT


1.0 –0.05 Fin thickness

9

7.5 ±0.2


+0.1

10.5 ±0.2 16

+0.15

0.25 –0.05

Single pulse

Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

Equivalent Circuit Diagram VB

VOUT 1

Gate Protction

Electrical Characteristics Parameter Power supply voltage

Symbol VBopr

Reg. REF

(VB =14V, Ta=25ºC unless otherwise specified) OVP

Ratings min

typ

5.5

max 25

Unit

Conditions

Gate Driver

TSD OCP

V

P-GND VIN 1


Iq

5

7

mA

VIN = 0V (all inputs)

Operating circuit current

ICC

8

12

mA

VIN = 5V (all inputs)

250 kΩ typ

Hi output

VIN

3.5

5.5

V

Lo output

VIN

–0.5

1.5

V

IO = 1A

Input voltage

VIN 2

VOUT 2

VIN 3

VOUT 3

VOUT 4

Hi output

I IN

50

µA

VIN = 5V

Lo output

I IN

30

µA

VIN = 0V

0.6

Ω

VIN 4

0.5

0.7

Ω

VB = 5.5V

L-GND

50

55

V

IO = 1A

Input current 0.4 Output ON resistance

RDS (ON)

Output clamp voltage

VOUT (clamp)

41

Output leak current

I OH

10

µA

VO = 37V

Forward voltage of output stage diode

VF

1.6

V

I F = 0.5A


VB (ovp)

25

40

V


TTSD

151


IS

1.1

165

Circuit Example

VCC

ºC

2

A

6

TON

12

µs

12

RL = 14Ω, I O = 1A

14

Output transfer time TOFF

8

µs

RL = 14Ω, I O = 1A

Output rise time

Tr

5

µs

RL = 14Ω, I O = 1A

Output fall time

Tf

10

µs

RL = 14Ω, I O = 1A

IN2 IN3

L H

15

5 VB

SPF5002A

IN4 L-GND 13

P-GND 1,9

Use L-GND and P-GND being connected.

Truth table VIN VO L

7

OUT2 OUT4

IN1

CONTROL UNIT

H

10

OUT1 OUT3

4

Timing Chart OVP

VB VOUT

VIN Normal

50

Overvoltage

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A



10

10

8

Id (mA)

Iq (mA)

Ta = –40ºC

6

4

Ta = 120ºC 2

Ta = –40ºC

6

4

Ta = 125ºC

10

20

30

0

40

6

Ta = 125ºC 4

2

2

0

Ta = 25ºC Ta = –40ºC

8

Ta = 25ºC

Ta = 25ºC

Id (mA)

8

0

■ Circuit Current (4 circuits)

10

0

10

VB (V)

20

30

0

40

10

20

■ Output ON Voltage

■ Threshold Input Voltage 15

30

40

VB (V)

VB (V)

■ Forward Voltage of Output Stage Diode 1.5

1.0

VB = 14V

5

0


0.4 0.5 0.2

VO = 14V IO = 0.1A 0

0.6

I F (A)

VDS (ON) (V)

1.0

VO (V)

10

Ta = 125ºC Ta = 25ºC Ta = –40ºC

0.8

Ta = –40ºC Ta = 25ºC Ta = 125ºC

Ta = –40ºC 1

2

0

3

0

0.5

VIN (th) (V)

1.0

1.5

2.0

IO (A)


0

0

0.5

1.0

1.5

VF (V)

■ Overvoltage Protection Starting Voltage

15

15 IO = 0.1A

VB =14V

10

Ta = –40ºC Ta = 25ºC Ta = 125ºC

VO (V)

VO (V)

10

5

5

Ta = 120ºC Ta = 25ºC Ta = –40ºC 0

0

1.0

IO (A)

2.0

0

0

10

20

30

40

VB (V)

51

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

External Dimensions (unit: mm) 17.28 ±0.2 +0.1

15.58 ±0.2

1.0 –0.05

24

Fin thickness

13

a

Symbol

Ratings

Unit

VB

40

V

Output terminal voltage (DC)

VOUT

50

V

Output terminal voltage (pulse)

VOUT

Output clamping (max 70V)

V

Output current (DC)

IOUT

±2.9

A

Output current (pulse)

IOUT

Over current protection starting current

A


V( IN, SEL, B/U)

–0.5 to +6.5

V

Diag output source current

VDIAG

6.5

V

Diag output voltage

I DIAG

5

mA

Power Dissipation

2.0–0.8

(Ta=25ºC)

PD

2.8

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC

Conditions

1

12 +0.15

1.27 ±0.25

0.4 –0.05

2.5 ±0.2

Parameter Power supply voltage

+0.2

b


+0.15

0.25–0.05

a : Part No. b: Lot No.

Equivalent Circuit Diagram VB (7)

Gate Protection Ref

VOUT1 (4)

Reg Gate driver

VIN B/U (17) TSD


80

EAV

mJ

VOUT SENSE

VIN SEL (5) Set OUT OCP Latch Reset

Single pulse VIN 1 (6)

P-GND1 (1, 2)

OSC Monitor

Symbol VB (opr)

(VB =14V, Ta = 25ºC unless otherwise specified)

Ratings min

typ

5.5

max

Unit

40

V

9

12

mA

VB =14V, VIN=0V


Id

12

15

mA

VB =14V, VIN=5V (all inputs)

Input voltage (1 to 4, SEL, B/U)

VIN (H)

3.5

6.5

V

VB =14V, VO=1A

VIN (L)

–0.5

1.5

V

VB =14V

Input current (single circuit) (1 to 4, SEL, B/U)

I IN (H)

200

µA

VB =14V, VIN=5V

I IN (L)

30

µA

VB =14V, VIN=0V


RDS (ON)

0.18

Ω

VB =14V, IO=1A

Output clamp voltage

VOUT (clamp)

VB =14V, IO=1A

70

V

Output leak current

I OH

50

µA


VF

1.5

V

I F =1A

Output moniter threshold voltage

65

P-GND2 (11, 12) VDIAG2 (10) VOUT3 (16)

Iq

60

VIN 2 (8)

Conditions



VB =14V, VO=50V

VIN 3 (18)

P-GND3 (13, 14) VDIAG3 (15) VOUT4 (21)

VIN 4 (20)

P-GND4 (23, 24) VDIAG4 (22)

L-GND (19)

Circuit Example

2

V

VB =14V

6.5

V

VB =14V, VDIAG=6.5V

VDIAG (L)

0.5

V

VB =14V, IDIAG=5mA

6

I DH

10

µA

VB =14V, VDIAG=6.5V

18

Vt hM VDIAG (H)

6.4

7

DIAG output voltage DIAG output leak current

VDIAG1 (3)

VOUT2 (9)



TTSD

151


IS

3.0

165

ºC

VB =14V

A

VB =14V

12

µs

VB =14V, RL=14Ω, I O=1A

TOFF

8

µs

VB =14V, RL=14Ω, I O=1A

Output rise time

Tr

5

µs

VB =14V, RL=14Ω, I O=1A

Output fall time

Tf

10

µs

VB =14V, RL=14Ω, I O=1A

t DON

12

µs

VB =14V, RL=14Ω, I O=1A

t DOFF

8

µs

VB =14V, RL=14Ω, I O=1A


8

20 17 5

VB

4

9

OUT1

OUT2

16

OUT3

21

OUT4

VIN1 VIN2 VIN3 VIN4

DIAG1 DIAG2

SPF5009

DIAG3 DIAG4

VINB/U VINSEL LG

TON Output transfer time

19

PG1 1, 2

PG2 11, 12

PG3 13, 14

3 10 15 22

PG4 23, 24

Timing Chart Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1

OCP

OCP

Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal

52

10.5 ±0.3

● DMOS 4ch output ● Allows ON/OFF using C-MOS logic level ● Built-in over current and thermal protection circuit and diagnostic function to detect open load ● Built-in output status signals (over current, over heat and open load)

7.5 ±0.2

Features

Output 1 Output 1 Output 1 Overheat Over current Open load Main mode

Nomal

Output 1 Output 1 Output 1 Overheat Over current Open load Backup mode

53

Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012


Features

17.28 ±0.2 +0.1

15.58 ±0.2

1.0 –0.05

24

Fin thickness

13

(Ta=25ºC)

Symbol

Ratings

Unit


VB

40

V


VCC

7.5

V

Output voltage

VO

40 (DC)

V

Logic input voltage

VIN

–0.5 to +7.5

V

Output current

IO

Self Limited

A

VDIAG

0 to VCC

V

PD

2.8 to 5

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC


EAV

100

mJ

Diag output voltage Power Dissipation

Conditions

1

12 +0.15

1.27 ±0.25

0.4 –0.05

2.5 ±0.2

Parameter

2 ±0.2

b


7.5 ±0.2

a

10.5 ±0.3

● Output monitor circuit (DIAG) ● DMOS 4ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent, overvoltage and thermal protection circuits

+0.15

0.25–0.05

*1 a : Part No. b: Lot No.


*2

VCC1-2 (7) Diag1 (5)

Single pulse VB (19)

* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate

Gate Protection VOUT1 (3)

Reg OVP Gate driver

TSD VIN1 (4)

OCP

P. GND1 (1, 2)

Ch1


(VB =14V, Ta = 25ºC unless otherwise specified)

Ratings

Parameter

Symbol


VB (opr)

5.5

40

V


VCC (opr)

4.5

5.5

V

min

typ

max

Unit

Conditions

Ch2

VCC3-4 (18)


Iq

4

6

mA

VB =14V, VIN=0V


Id

8

12

mA

VB =14V, VIN=5V

Hi output

VIN

3.5

5.5

V

VB =14V, VO=1A

Lo output

VIN

–0.5

1.5

V

VB =14V

Input voltage Hi output

I IN

50

µA

VB =14V, VIN=5V

Lo output

I IN

–30

µA

VB =14V, IO 1A

0.3

Ω

VB =14V, IO=1A, Ta=125ºC

0.2

Ω

VB =14V, IO=1A, Ta=25ºC

55

V

2.8

mA

VB =14V, VCC=5V, VIN=0V, VO =40V, Ta=25ºC

900

µA

VB =14V, VCC =5V, VIN=0V, VO =14V, Ta=25ºC

1.6

V

40

V

Input current

Output ON resistance Output clamp voltage

Output leak current

RDS (ON) VOUT (clamp)

45

50

I OH


VF


VB (ovp)

VB =14V, IO=1A

Overvoltage protection hysteresis voltage VB (ovp•hys) Thermal shutdown operating temperature Overcurrent protection operating current

TTSD

IS

151

8

V

165

ºC

L. GND (6)

Circuit Example

A

VB =14V, Ta=–40ºC VB =14V, Ta=25ºC

5

A

VB =14V, Ta=125ºC

TOFF

8

µs

Tr

5

µs

10

µs

Output transfer time Output rise time Output fall time Output-diag voltage ratio Diag output clamping voltage

Tf ra (DIAG) VDIAG (clamp)

0.195

0.2

0.205 4.85

19

VIN1 VIN2 VIN3 VIN4

4 9 16 21

3

10

15

22

VOUT1 VOUT2 VOUT3 VOUT4 Diag1 Diag2 Diag3 Diag4

SPF5012

5 8 17 20

Diag output

P-GND1 P-GND2 P-GND3 P-GND4

6

1, 2

11,12

13,14

23,24

Truth table VIN VO H

L

L

H

Short L-GND and P-GND in a pattern near the product.

VB=14V, RL=14Ω, I O=1A

VB =14V, VO =1 to 14V, Rdiag=500kΩ V

Input signal

L-GND

A

µs

18

7

VCC1-2 VCC3-4 VB

VB =14V

6

12

Ch4

Diag4 (20) VOUT4 (22) P. GND4 (23, 24)

VIN4 (21)

I F=1A

6

TON

Ch3

Diag3 (17) VOUT3 (15) P. GND3 (13, 14)

VIN3 (16)

VCC

25

Diag2 (8) VOUT2 (10) P. GND2 (11, 12)

VIN2 (9)

Timing Chart

VB=14V, VCC=5V, VO =40V

OVP

VB VOUT

VIN Normal

54

Overvoltage

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

55

Stepper-motor Driver ICs SLA4708M


Features ● High output breakdown voltage of 50V ● Affluent output current of 1.5A ● Built-in overcurrent, overvoltage and thermal protection circuits ● Low standby current of 50µA

31.0±0.2 3.2±0.15

Input voltage

VS

35

V

50

VO VIN

–0.3 to +7

V

1.5

A

Diagnostic output sink current

IDIAG

10

mA

Diagnostic output withstand voltage

IDIAG. H

7

V


Top

–40 to +85

ºC

Storage temperature

Tstg

–40 to +150

ºC

PD

3.5 (Ta=25ºC)

W

Power Dissipation

Lead plate thickness resins 0.8 max

9.9±0.2

8.5max

b

12

Pin 1 +0.2

0.85 –0.1

1.2±0.15

V

IO, AVE

Output current

Conditions

a

2.7

16.0±0.2

Breakdown voltage

Unit

9.5min (10.4)


Ratings

13.0±0.2

16.4

(Ta=25ºC)

Symbol

4.8±0.2 1.7±0.7

±0.2


Ellipse 3.2±0.15 • 3.8

24.4±0.2

+0.2

0.55 –0.1

±0.15

2.2±0.7

1.45 ±0.7

11•P2.54

±1.0

=27.94

31.5 max


1 2 3 4 5 6 7 8 9 10 11 12

Without heatsink

Standard Circuit Diagram Electrical Characteristics Parameter Input voltage (I A/A, I B/B standby) Input current

Symbol

(VS =12V, Ta=25ºC)

min

typ

max 0.8

VIL VIH

C

Ratings

2.4

Unit

Output leak current Overcurrent detection

4 OUTA

V

I IL

–0.8

mA

VIN = 0.4V

I IH

50

µA

VIN = 2.4V

Overvoltage detection Saturation voltage of diagnostic output Standby current

56

VO.STA

1.3

V

I O = 1A, Ta = 25ºC

VO.STA

1.5

V

I O = 1.5A, Ta = 25ºC

100

µA

I O.LEAK I SD

1.8

VSD

27.5

I STB

VO = 16V

A V

VDIAG.L

0.3 50

ZD

V

V µA

I DIAG = 5mA VS = 12V

5 OUT A

9 OUT B

SLA4708M

8 1 OUT B VS 12 DIAG 3 I A /A

I B/B 10 5V

Output saturation voltage

+

Conditions

2

STBY

4.7 kΩ

P-GND 6

L-GND 11

L-GND 7 N.C.

CPU

ZD: VS <35V C 100µF (Reference)

Stepper motor

Stepper-motor Driver ICs SLA4708M

Electrical Characteristics ■ Overvoltage Protection Characteristics

20

200

14

Ta = 25ºC Vcc=12V

Constant (ST = 5V)


100

At Constant IS (mA)

At standby IS (µA)

Power supply current

12

10

Common for all phases

10 8 6 4

At standby (ST = 0V) 2 0

0 0

10

20

30

Power supply voltage VS (V)

0 0

10

20

Power supply voltage VS (V)

■ Saturation Voltage of Output Transistor Characteristics Saturation voltage of output transistor Vsat (V)

■ Power Supply Current Characteristics

30

35

2.0

Vcc (Vs) =16V Ta =25ºC

Common for all phases

1.5

1.0

0.5 0

0

1.0

2.0

3.0


■ Thermal Protection Characteristics 14

Vcc (Vs) =12V VST = 5V


12 10 8

T j2

T j1

6 4 2 0 0

110

120

130

140

150

160

Junction temperature Tj (ºC)

57

2-ph Stepper-motor Driver ICs SPF7211


● Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) ● Built-in recovery diode ● Built-in standby function ● Built-in overcurrent and thermal protection circuits and low voltage input shutoff function ● Built-in overload and disconnection detection function

17.28±0.2

Flag terminal withstand voltage Flag terminal current Detect voltage Power dissipation Junction temperature Operating temperature Storage temperature

a

Ratings 40 –0.3 to 15 ±0.8 ±1.0 7 3 –2 to 2 4.1 39 150 –40 to 110 –40 to 150

PD Tj Top Tstg

Unit V V A V mA V W

Remarks VIN

2±0.2

b

Symbol VBB VIN Io IoPeak VFlag IFlag VRs

10.5±0.3

Fin thickness

1

12 +0.15

1.27±0.25

VBB

0.4 – 0.05

2.5±0.2

Output current

1.0 –0.05 13

Absolute Maximum Ratings Parameter Main power supply voltage Input voltage

+0.1

15.58±0.2 24

7.5±0.2

Features

Tw 1mS VFlag VBB

+0.15

0.25– 0.05


For Ta = 25°C * 1 For Tc (Ttab) = 25°C

°C °C °C

Note: *1: With glass epoxy + copper foil board (size 5.0•7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm)


Recommended Operation Range Unit V V A V mA V °C

Rs

Remarks VIN VBB Continuous VFlag VBB

I20 24 I21 Ph2 FL1 GND GND GND GND Out2A Rs2 FL2 Out2B 13

Ratings 6 to 18 –0.3 to 7.0 ±0.5 0 to 7.0 0 to 1.0 –1 to 1 –40 to 110

µPC (ECU)

SPM

Electrical Characteristics Parameter Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output leak current

Symbol IBB IBBS VUVLO VUVLOhys IoleakL IoleakH

min

Ratings typ

3.5 –100

100 0.5 0.8 1.2 1.5 1.2 1.3

Output saturation voltage VsatH Recovery diode forward voltage

Input terminal

Input voltage Hysteresis voltage

Ph terminal

Input current

Ixx, Set terminals Input current Detect voltage

VRs

Oscillation frequency PWM frequency Ct terminal threshold voltage Ct terminal current

Overcurrent detection voltage Open detection voltage Flag terminal leak current Flag terminal saturation voltage Flag terminal current Response pulse width Set terminal Pulse rate Pulse number Flag response time

OCP operation Open operation

I/O propagation time

Thermal protection temperature Thermal protection hysteresis Thermal alarm temperature Thermal alarm hysteresis

58

V FL V FH VFGO VIL VIH VIhys IIL IIH IIL IIH

Fosc FPWM VctL VctH Ictsink Ictsouce VocpL VocpH VocpL VocpH Vopen IleakFlag VFlagL IFlag Tpw Tpws Fclock Pulse tocp1 tocp2 tocp3 topen1 topen2 tonH1 toffH1 tonH2 toffH2 tonL1 toffL1 tonL2 toffL2 Tj ∆Tj Talarm ∆Talarm

Rs

max 50 50 4.5

0.5

VsatL

1.2 0.8 2.0 0.5 –5 –5 –30 660 420 40 28.8 14.4

1.5 VBB–2.5 1.0 VBB–2.3

5 5

700 450 70 48 24 0.5 1.5 720 –120 3.0 VBB–2.0

50 740 480 90 72 36

4.2 VBB–1.7 1.85 VBB–1.5

–60 10 0.5 3 10 100 17 2.5 5.0 5.0 2.5 2.5

24 256 5.0 10.0 10.0 5.0 5.0 1.5 1.5

31 10.0 20.0 20.0 10.0 10.0

100 100 2.0 0.5 100 100 150 120

20 130 20

I11 Ph1 Ct Set GND GND GND Out1A Rs1 VBB 12 Out1B

Symbol VBB VIN Io VFlag IFlag VRs Top

1 I10

Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Operating temperature

140

Unit

Conditions

mA µA V V µA µA V V V V V V V V V V µA µA µA µA mV mV mV kHz kHz V V µA µA V V V V mV µA V mA µS µS Hz — µS µS µS µS µS µS µS µS µS µS µS µS µS °C °C °C °C

In ordinary operation (no load) At sleep

VBB = 40V, Vo = 0V VBB = Vo = 40V Io = 0.5A Io = 0.8A Io = –0.5A Io = –0.8A Io = 0.5A Io = –0.5A Io = –0.5A

Ct 2200pF

Rs 1Ω typ (1 to 2W) IoM VRs/Rs

2-phase excitation Clock Ph1 I10, I11 Ph2 I20, I21

*1 Out voltage Out voltage VBB = 5.5V VBB = 5.5V Sence voltage VFlag = 7V IFlag = 1mA In ordinary operation At sleep Ct = 2200pF In ordinary operation; Ct = 2200pF At switching the phase When Ixx shifts from L to H In ordinary operation When Ixx shifts from L to H

*2

Note: *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values.

Excitation Signal Time Chart

0 L H L H

1 H H L H

2 H H H H

3 L H H H

0 L H L H

1 H H L H

1 to 2-phase excitation Clock Ph1 I10, I11 Ph2 I20, I21

VIL = 0.8V VIH = 2.0V Ix0 = High, Ix1 = High Ix0 = Low, Ix1 = High Ix0 = High, Ix1 = Low Ct = 2200pF±20% Ct = 2200pF±20%

VBB = 6 to 18V +

0 L H L H

1 H L L H

2 H H L H

3 H H H L

4 H H H H

5 L L H H

6 L H H H

7 L H L L

0 L H L H

1 H L L H

2 H H L H

3 H H H L

* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.

2-ph Stepper-motor Driver ICs SPF7211

Electrical Characteristics ■ Vsat Temperature Characteristics (Io=0.5A)

■ Diode VF Characteristics (IF=0.5A) 1.7 VFGO

VsatH

1 0.8 0.6 0.4

VsatL

1.5 Forward voltage VF (V)

Saturation voltage Vsat (V)

1.2

0.2

1.3 1.1 VFH

0.9

VFL

0.7

0 –30 –10 10

30 50

0.5 –30 –10 10

70 90 110 130 150

Junction temperature (ºC)

■ OSC Temperature Characteristics

70 90 110 130 150

■ Ta-PD Characteristics

55

40 Infinite heatsink equivalent (Tc=25°C) j-tab 3.2°C/W

53 FOSC 51

49

47


Oscillation frequency FOSC (kHz)

30 50


30

20

10 Copper foil area (5.0•7.4mm, t=18µm) j-a 30.5°C/W

Ct=2200pF 45 –30 –10 10

30 50

70 90 110 130 150


0

0

25

50

75

100

125

150


59

Full Bridge PWM Control DC Motor Driver ICs SI-5300


● P-ch MOS for high side and N-ch MOS for low side in one package ● Enable to drive DC±5V ● Possible to drive a motor at the LS-TTL, C-MOS Logic level ● Guarantee Tj=Tch=150°C ● Built-in over current protection and thermal shut down circuits ● Built-in diagnosis function to monitor and signal the state of each protection circuits ● Built-in vertical current prevention circuits (Dead time is defined internally.) ● No insulator required for Sanken's original package (SPM package)

4.8±0.2

(28.4)

b

(4)

(R0.8) R-end

+0.2

0.75–0.1

+0.2

0.45–0.1

14 • P2.03±0.1=(28.42)


Symbol

Ratings

Unit

40

2±0.5

35±0.3

(Ta=25ºC)

VM

Motor supply voltage

4.5±0.7

Conditions


V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


IN1

–0.3 to 7

V

IN2

–0.3 to 7

V

PWM

–0.3 to 7

V

IO

±5

A

IO (p-p)

±17

A

Output current

Equivalent Circuit VM

VM

PW

1ms, Duty

VM

50% B

fPWM

PWM control frequency

20

kHz

Duty=20% to 80%

B

OCP

Pre-Rec

OCP Pch1

Forward • reverse rotation switch frequency*

fCW

500

Hz


TOP

–40 to +85

ºC

Tj, Tch

–40 to +150

ºC

TSD

Q R

ºC

–40 to +150

Tstg j-c

3.7

ºC/W

j-a

35

ºC/W

B S

M

Dead Time

IN1

Storage temperature

FF

A

Pch2

OUT1

A

B

Junction and channel temperature

PWM

ECU inside VCC PULL-UP Resistor

OUT2 Nch1

PWM down edge sense

Thermal resistance

DIAG Nch2 A

A OCP

OCP B Dead Time

IN2

PD1

3.6

W

Without heatsink

PD2

33.7

W


Power dissipation

Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20µs (typical). Please take into account the dead time and consider the load conditions when you use the IC.

Output saturation voltage

Ratings min

typ

LGND

max

0.8

V

IO=3A

V, VO-PG

0.3

V

IO=3A

I L, L

100

µA

VM=40V

I L, H

100

µA

VM=40V

* 15 *3

µs

VPWM: L

µs

VPWM: H

10

µs

10 2

tpHL tpHL-tpLH

Static circuit current

H (Vth=2.5V typ)

IO=10A

0.8

V

IO=3A

1.0

V

IM1

22

mA

Stop mode

IM2

22

mA

Forward and reverse mode

16

mA

VIN, L IIN, L

V 2.0

IIN, H

200

OUT1

t DIAG

20

ms


VD •L

V

*

Vth VOUT GND

VOUT*0.9

OUT terminal GND tpLH

Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.

ID • SINK=1mA

Breake

Breake

High inpidance High inpidance

IOUT (A)

*4

GND

OUT terminal VOUT *0.1 tpHL

Protection circuit

Return to constant action VM=2V

VM=2V VM IN1 IN2 PWM

Vth

GND

Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.

VM-OUT1 (Pch1 VDS) VM-OUT2 (Pch2 VDS) VOUT1-GND (Nch1 VDS) VOUT2-GND (Nch2 VDS) OUT1 OUT2

*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.

60

Stop (Free Run)

OUT2 GND

VPWM (5V)

PWM terminal

Stop (Free Run)

C=1µF (typ)

*3: Output transmission time (tpHL)

VPWM (5V)

PWM terminal

Reverse Duty OFF

High inpidance

Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ➞ 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.

*2: Output transmission time (tpLH)

Reverse Duty ON

IN2

VIN1=VIN2=VPWM=5V 1

DIAG output pulse width

Forward Duty OFF

IN1

VIN1=VIN2=VPWM=0V

A

4,12 PGND

Brake mode VIN1=VIN2=VPWM

µA

16

0.3

Forward Duty ON

VIN1=VIN2=VPWM

IOCP

8 LGND Delay Capacitor 1µF

Therminal name

µA

OPC start current

M

Timing Chart

IO=10A

PWM

V

–100

9 TDIAG

Pull-up Resistor 10kΩ (Open Collector)

L (Vth=2.5V typ)

IO=3A

3.0

SI-5300

10 DIAG VCC

V

IM3

14, 15 OUT2

7 PWM

V

VIN, H

Input terminal current

6 IN1

1.0

VF •H

3, 5, 13 VM 1, 2 OUT1

11 IN2 CPU

0.8

VF •L

Forward voltage characteristic of diode between drain and source

+

Capacitor 220µF Battery

V, VM-VO

Output transmission time

PGND


Conditions VM=24V (2 min.)

6

tpLH


Unit V

Output leakage current

CDIAG 1µF

A

PGND

(Unless, otherwise specified, Tj=Tch=25°C, VM =14V, IO =3A)

18

VIN

Motor supply voltage

TDIAG

Relay


DIAG CONTROL

B

A

Parameter

3.6±0.5

(R0.8)

7.6±0.5

a

16.1±0.2

2.7±0.2

(4.5)

Features

IOUT (A) TDIAG DIAG DIAG Threminal VCC=5V Pull-up

20ms (min)

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Electrical Characteristics ■ Output saturation voltage (Pch)

■ Output saturation voltage (Nch)

■ Forward voltage of Diode between drain and source

0.5

1.0

12 VM=14V

VM=14V

Ta=25ºC

10

0.4

0.8

Nch MOS FET

Ta=85ºC Ta=25ºC

0.4

Ta=–40ºC

0.2

0

8

Ta=85ºC

0.3

Ta=25ºC

I FSD (A)

0.6

V•VO -PG (V)

V•VM -VO (V)

Ta=150ºC Ta=150ºC

Ta=–40ºC 0.2

1

2

3

4

5

6

2 0

0

7

0

1

2

3

I O (A)

4

5

6

7

0

0.2

0.4

I O (A)

■ Quiescent circuit current

0.6

1.2

0.6

Duty on

VM=14V

VM=14V

Brake

0.5 12

Duty off

Ta=150ºC

VO (V)

Stop

I SINK (mA)

0.4 I M (mA)

1.0

■ Current of input terminal (SINK current)

16

15

0.8

VFSD (V)

■ Voltage of input terminal (Threshold voltage)

25

20

Pch MOS FET

4 0.1

0

6

Ta=150ºC Ta=25ºC

8

Ta=–40ºC

10

Ta=85ºC Ta=25ºC

0.3

Ta=–40ºC 0.2

4 5

0.1

I O=0A Ta=25ºC

0

0

10

20

30

0

0

40

0

1

2

VM (V)

3

4

5

6

7

0

1

2

VIN1, IN2, PWM (V)

■ Current of input terminal (Source current)

3

4

5

6

7

VIN1, IN2, PWM (V)

■ VTDIAG – VDIAG Characteristics

■ Thermal shut down protection

Pull-up resistance =3kΩ

–12

6

6

Ta=25ºC

Ta=150ºC Ta=25ºC Ta=–40ºC

4

Ta=–40ºC

–6

3

3

–4

2

2

–2

1

1

0

10

20

30

0

40

0

1

VM (V)

2

3

4

5

0 100

6

■ Pch MOS FET Safe Operating Area (SOA)

150

175

200

Ta (ºC)

■ Nch MOS FET Safe Operating Area (SOA)

■ PD —Ta Characteristics 40

100

100

Tc=25ºC

Tc=25ºC 1ms

1ms

10ms I OUT (A)

10

100ms

10 10ms

100ms

1

1

0.3

0.3 2

125

VTDIAG (V)

Allowable Power Dissipation PD (W)

0

I OUT (A)

4 VDIAG (V)

Ta=150ºC

–8

5

5

VDIAG (V)

IIN1, IIN2, PWM source (µA)

–10

VM=10V I O=0A

VM=14V

I IN1=I IN2=PWM=0V

10 VM-OUT (V)

40

100

2

10 VOUT -PG (V)

40

100

35

Infinite heatsink (Tc =25ºC)

30 25 20 15 10 5

No heatsink

0 –40 –30

0

25

50

75

100


61

Full Bridge DC Motor Driver ICs SPF7301(under development)


● A DMOS of low ON resistance (0.1Ω typ) is mounted on the high and low side power elements ● Two input signals control the forward/reverse/brake of a DC motor ● Current limit and overcurrent protection circuits ● Low voltage and thermal protection, excess input detecting output and input terminal open protection

Symbol

Ratings

Unit

VB VIN1,VIN2 VEN VDI Io IoPeak VDIAG IDIAG P D1 P D2 Tj Top Tstg

–0.3 to 36 –0.3 to 6 –0.3 to 12 –0.3 to 6 ±7 ±15 –0.3 to 6 –3 39 4 –40 to 150 –40 to 105 –40 to 150

V V V V A A V mA W W °C °C °C

j-c

3.2

°C/W

j-a

31

°C/W

Junction temperature Operating temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air)

13.04 20

a

10 0.4 – 0.05


DIAG terminal sink current With an infinite heatsink mounted

*1

Standard Circuit Diagram VB

Ratings

Unit

Main power supply voltage DI terminal input voltage Input terminal input voltage Output current DIAG terminal voltage Operating temperature

VB VDI VINx Io VDIAG Top

8 to 18 –0.3 to 5.3 –0.3 to 5.3 ±1 –0.3 to 5.3 –40 to 105

V V V A V °C

Full Brige Driver IC

Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output terminal leak current

Output DMOS RDS (ON)

Forward voltage characteristics between output DMOS and DS

Overcurrent limiting operation current

OPC start current Input terminal voltage VIN1, VIN2 Input terminal current VIN1, VIN2 DI terminal voltage DI terminal current EN terminal input voltage EN terminal input current DIAG terminal output voltage DIAG terminal output current DIAG terminal leak current

Input delay time

Overvoltage protection operation voltage OVP hysteresis width Thermal protection starting temperature Thermal protection hysteresis width

62

Ratings typ 15

max 100 7.0 6.5

5.0 4.5 0.5 –100

4.5 4.5 4.5 4.5

100 100 100 100 1.5 1.5 1.5 1.5 7 7 7 7 15 15 15 15

100 200 200 200 200

10 10 10 10

2 0.8 –100 –100 2 0.8 –100 –100 0.8

4 100 10 0.8

–10 1.5 –10

35 151

40 5 165 15

15 20 15 6 6 4 45

M OUT2

Cin

R1

R2 RDI

PGND

LGND

* Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20kΩ Input terminal pull-down resistance R1, R2, RDI: 10kΩ

Unit mA µA V V V µA µA mΩ mΩ mΩ mΩ V V V V A A A A A A A A V V µA µA V V µA µA V µA µA V mA µA µS µS µS µS µS V V °C °C

OUT1

SFP7301

Remarks

(Tj = 30 to 125°C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20kΩ unless otherwise specified) * 2


RDIAG

IN1

DI

Symbol

min

Ccp DIAG

IN2

Parameter

Vcc

EN CP

Recommended Operation Range

IBB1 IBB2 VuvloH VuvloL ∆UVLO IleakHS IleakLS RDS(ON)_1H RDS(ON)_2H RDS(ON)_1L RDS(ON)_2L VF_H1 VF_H2 VF_L1 VF_L2 Iocp1_H1 Iocp1_H2 Iocp1_L1 Iocp1_L2 Iocp2_H1 Iocp2_H2 Iocp2_L1 Iocp2_L2 VINxH VINxL IINxH IINxL VDIxH VDIxL IDIxH IDIxL VENth IENH IENL VDIAG IDIAG IDIAGL TdON TdOFF Tr Tf Tddis VOVP ∆VOVP Ttsd_ON ∆Ttsd

0.25–0.05

1kHz, Duty 1%, Pulse 10µS

Power supply

Symbol

+0.15

+0.15

1.27±0.25

Note: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18µm)

Parameter

2±0.2

1

Remarks

10.5±0.3

11

2.5±0.2

Parameter

Power dissipation

Fin thickness

(Ta=25ºC)

Main power supply voltage Input terminal input voltage EN terminal voltage Disable terminal input voltage

DIAG output current DIAG inflow current

1.0 –0.05

±0.2

b


Output current

+0.1

14.74±0.2

7.5±0.2

Features

Conditions For VEN = 0V

Io1 = 1A Io2 = 1A Io1 = –1A Io2 = –1A

VDI = 5V VDI = 0V

VDI = 5V VDI = 0V VEN = 5V VEN = 0V IDIAG = 0.5mA For VDIAG = 1.6V Time from VINxH to Voutx•0.2 Time from VINxL to Voutx•0.8 Time of Voutx from 20% to 80% Time of Voutx from 80% to 20% Time from DIthH to Voutx•0.2

*3 *3

Note: *2: For the electrical characteristics for Tj = –40 to 150°C, the design warranty applies to the above specification values. *3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters are the design specifications.

63

High Voltage Full Bridge Drive ICs SLA2402M

Features


● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line ● External components such as high voltage diodes and capacitors are not required

3.2 ±0.15

*

Ratings

Unit

VM

500

V

b

Conditions 0.65

+0.2 –0.1

16.0±0.2

13.0±0.2

9.9±0.2


a

9.5 min

Symbol

4.8±0.2 1.7±0.1

2.7

Parameter Power source voltage

Ellipse 3.2 ±0.15 •3.8

16.4 ±0.2

8.5 max


31.0 ±0.2 24.4 ±0.2

+0.2

2.45±0.2

1.0 –0.1

+0.2

17• P1.68 ±0.1 =28.56

Input voltage

VIN

15

Output voltage

VO

500

V

Output current

IO

15

A

PW

Power dissipation

PD

5 (Ta=25ºC)

W

Without heatsink

Storage temperature

Tstg

–40 to +125

ºC

Operation temperature

Topr

–40 to +105

ºC

V

0.55 –0.1

31.5 max

250µs


* Power GND (D terminal) to -HV (-HV terminal) voltage.

Block Diagram


Symbol

Power MOS FET output breakdown voltage

BVOUT

Ratings min

typ

Unit

max

Conditions 7

500

IO=100µA

V

4

MOSQ1

IOUT (off)

High-side Power MOS FET output on-state voltage Low-side Power MOS FET output on-state voltage

µA

100

MOSQ'2

LO1

GL1

15 OUT2

MIC

MOSQ'1

2

VO=500V

MOSQ2 HO2

HO1

OUT1

Power MOS FET output leakage voltage

+12V

VCC

D1

VIN1

–HV

VIN2

LO2 L GND

GL2

IO=0.4A, VIN=10V

VOUT (on) 1

0.28

0.4

0.52

V

VOUT (on) 2

1.4

2.0

2.6

V

IO=2A, VIN=10V

VOUT (on) 1

0.28

0.4

0.52

V

IO=0.4A, VGL=10V

VOUT (on) 2

1.4

2.0

2.6

V

IO=2A, VGL=10V

ICC 1

3.0

mA

VCC=4.5 to 15V

3

6

8

10

9

11

13

16

CPU

* Dotted Line: Outside Connection

Quiescent circuit current ICC 2

4.0

mA

VCC=10V, VM=400V


ICC 3

4.0

mA

VCC=10V, VM=400V

Input voltage (High level)

VIH

Input voltage (Low level)

VIL

Delay time

*

Operating voltage

0.8VCC 0.2VCC

V

VCC=4.5 to 15V

V

VCC=4.5 to 15V

Timing Chart

t d (on)

1.4

µs

VCC=10A, VIN=10V,

t d (off)

3.3

µs

VM=85A,

∆t

2.5

µs

IO=0.41A

VCC

15

V

–40 to +105ºC

Ignition

VCC IN1 IN2

* About delay time

HO1

Signal input waveform vs output waveform

LO2

1 Highside switch turn-on, turn-off

2 Lowside switch turn-on, turn-off HO2

VIN1 0V

10%

VIN1

10%

10%

0V

10%

LO1 —HV

0V

0V 10%

10%

OUT2-GND

td (on)

td (on)

Measurement Circuit VIN2

RL VOUT1

VOUT2

td (on)

Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207Ω)

* When pulse signal is inputted to VlN1, VIN2

VIN1

VM

64

–100V

VOUT2

* ∆t: ∆t = td (on) – td (off)

VIN1

0V

10%

10% VOUT1

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

td (on)

–400V

OSC 400Hz

17


Electrical Characteristics ■ Quiescent circuit current supplied high voltage


25ºC

–40ºC 1.0 0.5

2.5

150ºC

2.0

105ºC 1.5 25ºC 1.0 –40ºC 0.5 0

0 0

5

10

15

100

300

400

VIN=0V VM=400V 105ºC 3 25ºC 2 –40ºC 1

10

15

12V 1.5 10V 9V

1.0 0.5

4.5V 200

300

400

VCC =VIN =10V

10V

1.5

9V 1.0 0.5

4.5V

–40ºC

0 2

3

100

500

Ta=25ºC 8

2

VCC=15V VCC=9V

6

4

VCC= 4.5V

2

0 0

50

100

150

0

5

10

15


Ambient temperature (ºC)

■ Output on-state voltage

400

10

4

Output current (A)

300

■ Gate drive voltage

6

0 –50

4

200

High voltage VM (V)

Gate drive voltage VGL (V)


2

■ Input threshold voltage 8

5 Input threshold voltage VIH, VIL (V)

VCC=VIN=10V 4

3 I O=2A 2

1 I O=0.4A 0 –50

12V

0

8

25ºC

VCC= 15V

2.0

VCC=10V

4

500

2.5

500

10

105ºC

400

0 100


150ºC

300

3.0

High voltage VM (V)

8

200

Ta=25ºC

VCC= 15V

2.0

0

10

6

100

■ Operating circuit current

2.5

20


1

0.5

3.5

Operation voltage VCC (V)

0

1.0

0

0

0 5

–40ºC

High voltage VM (V)

Ta=25ºC 150ºC

0

25ºC

1.5

500

3.0 Quiescent circuit current ICC2 (mA)

Quiescent circuit current ICC2 (mA)

200


5

4

105ºC 2.0

High voltage VM (V)

■ Quiescent circuit current supplied high voltage

150ºC

2.5

0 0

20


Output on-state voltage (V)

VCC=VIN1(2)=10V

Operating circuit current ICC3 (mA)


1.5

3.0 VIN=0V VCC=10V


2.0


2.5

150ºC 105ºC

VIN=0V

Output on-state voltage (V)


3.0

3.0

0

50

100


150

7

VCC=10V VIH

6 5 4

VIL

3 2 1 0 –50

0

50

100

150


65


Electrical Characteristics ■ High side switch turn-on, off

■ High side switch turn-on, off

5.0

5.0 Ta=25ºC VM=85V, I O=0.41A

5.0 VM=85V, I O=0.41A VCC=10V

4.0

Ta=25ºC VM=85V, I O=0.41A turn-off

turn-off 3.0

2.0

4.0 turn-on, off (µs)


turn-on, off (µs)

■ Low side switch turn-on, off

3.0

2.0

turn-off 3.0

2.0

turn-on turn-on

1.0

0 6

8

10

12

14

0 –50

16


turn-on, off (µs)

3.0

2.0 turn-on 1.0

0

50

100

150

■ Power derating curve 6

Power dissipation (W)

150

4

without heatsink

4 3 2 1

0

50

100

150

8

10

12

14

16


■ Safe operating area (Power MOS FET) RDS (on) limited

10

10

1

0.1

100µs 1ms 1 10ms 0.1

0.01

0.001 0.0001 0.001

6

100

Ta=25ºC Single pulse 0.01

0.1

1

Power time (s)



Transient thermal resistance (ºC/W)

turn-off

4.0

66

100

100 VM=85V, I O=0.41A VCC=10V

0 –50

50

■ Transient thermal resistance characteristics

5.0

5

0 0



0 –50

1.0

Drain current (A)

4

turn-on

1.0

10

100

Ta=25ºC Single pulse 0.01 10

100 Drain to source voltage (V)

1000

67


Features


● One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line ● External components such as high voltage diodes and capacitors are not required

3.2 ±0.15

Ratings

Unit

VM

500

V

Input voltage

VIN

15

V

Output voltage

VO

500

V

IO

7

A

Tc=25ºC

IO (peak)

15

A

PW

*

b

Conditions 0.65

+0.2 –0.1

16.0±0.2

13.0±0.2

9.9±0.2


a

9.5 min

Symbol

+0.2

2.45±0.2

1.0 –0.1

+0.2

17• P1.68 ±0.1 =28.56

0.55 –0.1

31.5 max

Output current

Power dissipation

4.8±0.2 1.7±0.1

2.7

Parameter Power source voltage

Ellipse 3.2 ±0.15 •3.8

16.4 ±0.2

8.5 max


31.0 ±0.2 24.4 ±0.2


250µs

5 (Ta=25ºC)

W

Without heatsink

40 (Tc=25ºC)

W


PD

Storage temperature

Tstg

–40 to +125

ºC

Operation temperature

Topr

–40 to +125

ºC


Tj

150

ºC

Block Diagram

* Power GND (D terminal) to -HV (-HV terminal) voltage.

7


Symbol

MOSQ2

MOSQ1 4

Ratings min

Power MOS FET output breakdown voltage

BVOUT

Power MOS FET output leakage voltage

IOUT (off)

High-side Power MOS FET output on-state voltage

VOUT (on)

0.18

Lowside Power MOS FET output on-state voltage

VOUT (on)

0.18

typ

Unit

max

5

Conditions

D1

VCC

HO1

OUT1

VIN1

V

IO=100µA

100

µA

VO=500V

0.26

0.34

V

IO=0.4A, VIN=10V

0.26

0.34

V

IO=0.4A, VGL=10V

500

2

MOSQ'2 LO2

LO1

GL1

6

–HV

8

VIN2

10

GL2

L GND

9

11

13

17

CPU


ICC 1

3.0

mA

VCC=6 to 15V

ICC 2

4.0

mA

VCC=10V, VM=400V


ICC 3

4.0

mA

VCC=10V, VM=400V

Input voltage (High level)

VIH

Input voltage (Low level)

VIL


Delay time

*

0.8VCC 0.2VCC

VCC=6 to 15V

V

VCC=6 to 15V

VCC IN1

t d (on)

2.0

µs

VCC=10A, VIN=10V,

t d (off)

3.0

µs

VM=85V, IO=0.41A

V

–40 to +125ºC

6

VCC

Operating voltage

15

Timing Chart

V

Ignition

IN2 HO1

* About delay time

LO2

Signal input waveform vs output waveform HO2

1 Highside switch turn-on, turn-off

2 Lowside switch turn-on, turn-off LO1

VIN1 0V

10%

VIN1

10%

10%

0V

10%

—HV

0V 10%

10% VOUT1

10%

10%

td (on)

td (on)

VOUT2

td (on)

* ∆t: ∆t = td (on) – td (off) Measurement Circuit VIN1

VIN2

RL VOUT1

VOUT2

VIN2

VIN1

VM

68

0V –100V

0V


* When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

td (on)

OUT2-GND

–400V

D2

15 OUT2

MIC

MOSQ'1

3

HO2

OSC 400Hz

14 16


Electrical Characteristics ■ Quiescent circuit current


2.5

85ºC 2.0 25ºC 1.5 –40ºC 1.0 0.5

4.0 VIN=0V VCC=10V

2.5

125ºC

2.0

85ºC 1.5 25ºC 1.0 –40ºC 0.5 0

0

5

10

15

100

400

85ºC 25ºC

–40ºC

1

5

10

15

–40ºC

1.0 0.5 0

2.5 2.0

12V

1.5

10V 9V

1.0

6V

0.5

100

200

300

400

VCC= 15V

2.5

12V

2.0 10V 9V

1.5 1.0

6V 0.5 0

100

200

300

400

500

High voltage VM (V)


10

10 Ta=25ºC

VCC=VIN=10V

150ºC

4

125ºC

3

85ºC

2

25ºC

1

–40ºC

2

3

Output current

8

6 VCC=6V 4

2

0 –50

0 4

VCC=15V

VCC=10V Gate drive voltage VGL (V)

Input threshold voltage VIH (V)

5

1

500

3.0

500

■ Input threshold voltage

6

400

3.5

High voltage VM (V)


300

0 0

20

200

Ta=25ºC VCC= 15V

3.0


0

100


0 0

25ºC 1.5

500


4

2

85ºC 2.0

High voltage VM (V)

Ta=25ºC

125ºC

3

125ºC 2.5

4.0

150ºC Quiescent circuit current ICC2 (mA)

8

VCC=10V VCC= 6V

6

4

2

0 0

50

100

150

200

0

5


I OUT (A)



4

10

15


■ Gate drive voltage 10

7 Input threshold voltage VIL (V)

VCC=VIN=10V 3

I O=2A

2

1 I O=0.4A 0 –50

0

50

100


150

6 Gate drive voltage VGL (V)


300


0

VOUT (ON) (V)

200

3.5 VIN=0V VM=400V

150ºC

3.0

High voltage VM (V)

■ Quiescent circuit current supplied high voltage 5

3.5

0 0

20


Output on-state voltage

VCC=VIN1(2)=10V 150ºC


150ºC 125ºC



VIN=0V

0

Output on-state voltage VOUT (ON) (V)


3.0

3.0

5 4 VCC=10V

3 2

VCC=6V

8 VCC=10V 6 VCC=6V

4

2

1 0 –50

0

50

100


150

0 –50

0

50

100

150


69


Electrical Characteristics ■ High side switch turn-on, off


5.0

VM=85V, I O=0.41A VCC=10V

2.0 turn-on

3.0

2.0

turn-on

6

8

10

12

0 –50

14


turn-off 3.0

turn-on

1.0

0

50

100

150

100

150

4

■ Power derating curve 50 Tc=25ºC

30

20

10 without heatsink

0

50

100

150

6

8

10

12

14


■ Safe operating area (Power MOS FET) 100 RDS (on) limited

10

10µs 100µs

10

1

0.1

1ms 1 10ms 0.1

0.01

0.001 0.001

Ta=25ºC Single pulse 0.01

0.1

1

Power time (s)



Transient thermal resistance (ºC/W)

4.0

0 –50

50

100 VM=85V, I O=0.41A VCC=10V

40

0 0


5.0

0 –50

2.0



2.0

turn-off

1.0

Drain current (A)

4

3.0

turn-on 1.0

0

turn-on, off (µs)

4.0 turn-off

turn-on, off (µs)

turn-off

3.0

1.0

PD (W)

Ta=25ºC VM=85V, I O=0.41A


turn-on, off (µs)

4.0

Power derating

5.0

5.0 Ta=25ºC VM=85V, I O=0.41A

70


10

100

Ta=25ºC Single pulse 0.01 10

100 Drain to source voltage (V)

1000

71

High Voltage Full Bridge Drive ICs SMA2409M

Features


● One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line

31.0 ±0.2

a


(Ta = 25°C)

Symbol

Ratings

Unit

VM

500

V

Input voltage

VIN

15

V

Operation voltage

Vcc

15

V

Vo

Output voltage

500

(10.4)

Parameter Power supply voltage

2.7±0.2

b

10.2±0.2

4.0±0.2

Conditions Power GNG to HV +0.2

+0.2

1.16 –0.1

0.65 –0.1 +0.2

V

1.2 ±0.2

0.55 –0.1

14 • P2.03 ±0.1= (28.42)

(root dimensions)

(root dimensions)

Output current (DC) Output current (pulses)

Io(DC)

7

Io(pulse)

15


W Tc = 25°C

20 j-a

31.2

j-c

6.2


Topr

–40 to +105

°C

Storage temperature

Tstg

–40 to +150

°C


Tj

150

°C

IGBT single pulse avalanche resistance

EAS

5

mJ

VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A

ESD protection

ESD

±2

kV

Human body model (C = 100pF, R = 1.5kΩ)

Thermal resistance

31.3 ±0.2

Single pulse (PW = 50µs max.)

A

4

PD

Power dissipation

A

°CW

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Tc = 25°C

Block Diagram

6


(Ta = 25°C) 4

Parameter IGBT output breakdown voltage

BVOUT

V

570

Io = 0.4A, VIN (or VGL) = 10V

1.3

1.8

V

Io = 2.0A, VIN (or VGL) = 10V

Icc1

3.0

mA

Vcc = 10V, VM = VIN = 0V

Icc2

4.0

mA

Vcc = 10V, VM = 400V, VIN = 0V

Icc3

4.0

mA

Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V

High side Delay time*

Low side

V

16

V

0.8•Vcc

t d (on)

0.6

0.7

0.8

µs

t d (off)

1.8

2.2

2.6

µs

t d (on)

0.8

0.9

1.0

µs

t d (off)

1.3

1.6

1.9

µs

2.5

µs

∆t d = H/S t d (off) - L/S t d (on) or L/S t d (off) - H/S t d (on)

15

V

Ta = –40 to +105°C

Vcc

9

LO1 VIN1

3

5

–HV VIN2 L GND

7

9

IGBT Q'2 GL2

8

10

11

13

CPU

Vcc = 9 to 15V


Timing Chart

VM = 85V, Io = 0.41A Vcc = 10V VIN = 10V (Out Stage = ON) VIN = 0V (Out Stage = OFF)

A Drive Example Ignition

OSC250Hz

VCC IN1 IN2 LO1 LO2

Recommended Operation Range Parameter

min

td

typ

0V –85V –400V

Ratings

Symbol

Dead time

–HV–GND

max

Unit

–85V –400V

µs

5.0

OUT1–GND 0V

Conditions Ta = –40 to +105°C

0V –85V

OUT2–GND –400V

* About delay time Signal input waveform vs output waveform 1 Highside switch turn-on, turn-off VIN1 0V

10%

2 Lowside switch turn-on, turn-off VIN1 0V

10%

0V

0V 10%

10%

Vout1 td(on)

VIN2

RL VIN1 VOUT1 VIN2

10%

Vout2

td(off)

Measurement Circuit

72

10%


* When pulse signal is inputted to VlN1,

VOUT2

VIN1

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

10%

10%

12 OUT2

LO2

Vcc = 9 to 15V

VGL

∆td Operating voltage

0.2•Vcc

D2

HO2

MIC

Vo = 500V

V

0.8•Vcc

IGBT Q'1 GL1

Io = 100µA, Tj = 25°C

V

VIL Low-side IGBT gate drive voltage

2

µA

VIH

IGBT Q2

VCC

OUT1

1.2

VOUT (on)

Input threshold voltage

max

Conditions

100

IOUT (off)

IGBT output ON voltage


typ

Unit

1.0

IGBT output leak current


min

IGBT Q1 HO1

Ratings

Symbol

D1

14


Electrical Characteristics ■ Quiescent circuit current

■ Quiescent circuit current supplied high voltage 4.0 105ºC

2.5 25ºC

2.0 1.5

–40ºC

1.0 0.5 0

3.5 3.0

150ºC

2.5

105ºC

2.0 25ºC

1.5 –40ºC

1.0 0.5 0

5

10

15

100



–40ºC

1

5

10

15

12V

2.0 10V 9V

1.5 1.0

6V

0.5

4.5V

300

400

4

Input threshold voltage VIL (V)

1.8 1.6 I O=2A

1.2 1.0 I O=0.4A

0.8

100


6V

0.5

4.5V

0

100

200

150

300

400

500

VCC=15V

12

6 VCC=9V

4

2

10 8

VCC=9V

6 4 2 0

0

50

100

150

200

0

5

14

7

12

6 VCC=15V

4 3

VCC=9V

2

0 –50

15


8

5

10


VCC=15V

10 8 VCC=9V

6 4 2

1 50

1.0



VCC=VIN=10V

0

10V 9V


2.0

0.6 –50

1.5

14

I OUT (A)


1.4

12V

2.0

High voltage VM (V)

8

0 –50

0.5 Output current

2.5

500


1.0

500

VCC= 15V

Ta=25ºC Input threshold voltage VIH (V)

VOUT (ON) (V)

200

VCC=15V

1.5

400

3.0

High voltage VM (V)

150ºC 105ºC 25ºC –40ºC

300


10

3

200

0 100


2

100

Ta=25ºC

VCC= 15V

2.5

0

2.0

1

0.5

High voltage VM (V)

3.0

20


0

–40ºC

1.0

3.5


VCC=VIN=10V

25ºC

1.5

0

0 0

105ºC

2.0

500



25ºC

0

Output on-state voltage

400

Ta=25ºC

4

2

300

3.5

125ºC

3

200


150ºC

VIN=0V VM=400V

150ºC

2.5

High voltage VM (V)


5

3.0

0 0

20


0

Output on-state voltage VOUT (ON) (V)

VCC=VIN1(2)=10V Operating circuit current ICC3 (mA)

3.0

3.5

VIN=0V VCC=10V

150ºC

VIN=0V



3.5


0

50

100

150


200

0 –50

0

50

100

150


73


Electrical Characteristics ■ High side switch turn-on, off 3.5

2.5

3.0 t d (off)

2.0 1.5 1.0

2.0

1.5

2.5

t d (off)

2.0 1.5 1.0

t d (on)

t d (off)

1.0 t d (on)

0.5

t d (on)

0.5

0.5

0 9

11

13

0 –50

15


0 0

50

100

7

150




2.5 Transient thermal resistance (ºC/W)

t d (off)

1.5

1.0

t d (on)

0.5

11

13

15

■ IGBT ASO characteristics

100

2.0

9


100

10

Collector current (A)

7

turn-on, off (µs)


turn-on, off (µs)

3.0

turn-on, off (µs)

turn-on, off (µs)


1

10

100µs

1 1ms

0.1 Ta = 25°C Single pulse 10ms

0 –50

0

50

100

150

■ Power derating curve 5

Power derating

PD (W)

without heatsink

4

3

2

1

0

50

100


74

0.01

0.1

1

Power time (s)


0 –50

0.01 0.001

150

10

100

0.1 10

100 Collector-emitter voltage (V)

1000

75

Custom ICs ■ Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. ■ Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration.

Features ● All semiconductor chips used are

Examples of Sanken Automotive Hybrid ICs

manufactured by Sanken. ● Main product lineup consists of power ICs produced out of many

Lead frame type multi-chip power IC

● One-chip power IC

Lead frame type power hybrid IC with ceramic substrate

● High-output high-breakdown voltage IC ● Simplified integration of custom circuits ● Distribution of unit functions (Actuators may be built in the device)

years' experience of Sanken. ● Uses monolithic chips with flip-chip construction. ● Mainly available in miniature transfer-mold packages.

Examples of Custom Hybrid IC Products ● Regulators for alternators ● Igniters ● Power supply for microcomputer system ● Power steering control IC ● Motor and actuator driver ● Others

Surface-mount power IC

76

Custom ICs


4.2

4.0

20.2

16.9

19.9

4.0

25.25

9.0

10.0

9.0

5.0

15.6

STA 10pin

STA 8pin

FM205

MT-100

SMA15pin 4.0

4.0

SLA18pin

16.0

3GR-F

3GR-M 5.5

5.5

19.8

23

16.0

STR-S

SPM

5.5

24.2

23

15.6

4.8

31.0

4.8

31.0

4.8

31.0

10.2

10.2

31.0

23

31.0

SLA15pin

SLA12pin

16

SMA12pin

SMD16pin

SPF16pin 12.05 16 15 14 13 12 11 10 9 9

16.1

7.5

6.8

9.8

16

Pin 1

20.0

8 2

3

4

5

6

7

8

2.5

4.0

1

SPF20pin

10.5

4.8

35

SPF24pin +0.1

17.28

1.0 – 0.05 Fin thickness

24

13

7.5

2±0.2

7.5

±0.2

11

10.5±0.3

20

10.6

14.74±0.2 13.04±0.2

10 1

+0.15

0.4 – 0.05

2.5±0.2

1.27±0.25

12

+0.15

0.25 – 0.05

2.5

1

77

78

2 Discretes 2-1. Transistors

2-2. MOS FETs .........................................

2-1-1. Transistors

80

2-2-1. MOS FETs

.........................................

108

...

108

......

80

2SK3710 (60V/70A/6mΩ, Surface-mount)

....................................

81

2SK3711 (60V/70A/6mΩ) .............................. 109

12A) .................................... 82

2SA1488/1488A (–60V/–4A, –80V/–4A) 2SA1567 (–50V/–12A) ±

.....................................

83

2SK3724 (60V/80A/5mΩ, Surface-mount) ... 110 2SK3800 (40V/70A/6mΩ, Surface-mount) .. 111

...................................

84

2SK3801 (40V/70A/6mΩ) .............................. 112

2SC3852 (60V/3A) ........................................... 85

2SK3803 (40V/85A/3mΩ, Surface-mount) ... 113

2SA1568 (–60V/

2SA1908 (–120V/–8A)

2SB1622 (–200V/–15A) 2SC4024 (50V/10A)

........................................ ......................................

87

........................................

88

2SC4065 (60V/±12A) 2SC4153 (120V/7A)

2SK3851 (60V/85A/4.7mΩ)

..........................

114

...

115

FKV460S (40V/60A/9mΩ, Surface-mount) FKV660S (60V/60A/14mΩ, Surface-mount)

89

....................................

90

SDK06 (52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117

........................................

91

SDK08 (50V/4.5A/0.08Ω, Surface-mount 4-circuits)

...........................................

92

SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119

.................................

93

SLA5027 (60V/12A/0.08Ω, 4-circuits)

2SD2382 (60±5V/±6A) 2SD2633 (150V/8A)

MN611S (115±10V/±6A)

MN638S (380±50V/6A) ................................... 94

..........

117

118

120

SLA5098 (40V/20A/0.017Ω, 6-circuits) ....... 121 ..........

...........

95

SMA5113 (450V/7A/1.1Ω, 4-circuits)

............................

96

STA508A (120V/6A/0.2Ω, 4-circuits) ........... 123

96

STA509A (52±5V/3A/0.25Ω, 4-circuits)

SSD103 (65±5V/±6A, Surface-mount) 2-1-2. Transistor Arrays

2-2-2. MOS FET Arrays

...........................

116

..................................

2SD2141 (380±50V/6A)

FP812 (–100V/–8A)

86

SDA03 (–60V/–6A, Surface-mount 4-circuits)

.......

122

124

SDA04 (–60V/–6A, Surface-mount 2-circuits) 97 SDC09 (65±5V/6A, Surface-mount 2-circuits) SLA8004 (60V/12A, –55V/–12A, H-bridge)

98

.........

99

SPF0001 (115±10V/±6A, Surface-mount 2-circuits) 100 STA315A (35±5V/2A, 3-circuits)

..................

101

STA335A (35±5V/3A, 2-circuits)

..................

102

STA415A (35±5V/2A, 4-circuits)

..................

103

STA460C (60±10V/±6A, 2-circuits) .............. 104 STA461C (65±5V/±6A, 2-circuits)

................

105

STA463C (115±10V/±6A, 2-circuits) ............ 106 STA464C (65±5V/6A, 4-circuits)

..................

107

2-3 Thyristors 2-3-1. Reverse Conducting Thyristors .. 125 TFC561D (600V, 430A, 1200A/µs)

..............

125

TFC562D (600V, 600A, 1600A/µs)

..............

126

..........................

127

2-4. Diodes 2-4-1. Alternator Diodes

..

128

...................

129

..........

130

2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes

2-4-4. General-purpose Diodes

79

Power Transistor 2SA1488/1488A

IEBO V(BR) CEO hFE VCE (sat) fT COB

VCB = VEB = –6V IC = –25mA VCE = –4V, IC = –1A IC = –2A, IB = –0.2A VCE = –12V, IE = –0.2A VCB = –10V, f = 1MHz

10.0

a b

RL (Ω) 6

IC (A) –2

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –200

2.54

t on t stg tf IB2 (mA) (µs) (µs) (µs) 200 0.25typ 0.75typ 0.25typ

0.45

2.54 2.2

a) Part No. b) Lot No. (Unit: mm)

B C E

■ IC —VCE Characteristics (typ.) –60mA

–50mA –40mA

–3

–1A 0 0

–1

–2

–3

–4

–5

0 –0.01

–6

–0.05 –0.1

VCE (V)

–0.5

0

–1

0

) tu re

tu re

p e ra

–1.0

–1.5

VBE (V)

■ hFE —IC Temperature Characteristics (typ.) (VC E = –4V)

500

e te m

–0.5

IB (A)

■ hFE —IC Characteristics (typ.)

(C a s

ºC 125

–2A

)

re) atu per

–1

IC = –3A

IB = –5mA

p e ra

tem

–0.5

–1

– 3 0 ºC

–10mA

–2

se

–20mA

–2

–1.0

e te m

VCE (sat) (V)

–30mA

IC (A)

–3

IC (A)

( VC E = –4 V)

–4

(C a s

–8

■ IC —VBE Temperature Characteristics (typ.)

–1.5

2 5 ºC

A

0m

■ VCE (sat)—IB Characteristics (typ.)

(Ca

–4

C0.5

2.6

1.35 1.35 0.85

Typical Switching Characteristics (common emitter) VCC (V) –12

4.2 2.8

3.3

16.9

ICBO

(13.5)

V V V A A W ºC ºC

Test Conditions

4

VCBO VCEO VEBO IC IB PC Tj Tstg

Symbol

Unit

External Dimensions TO220F (full-mold)

8.4

Symbol

(Ta = 25ºC) Ratings Unit 2SA1488 2SA1488A µA –100max –100max –60 –80 V µA –100max –60min –80min V 40min V –0.5max 15typ MHz 90typ pF

0.8

Ratings 2SA1488 2SA1488A –80 –60 –60 –80 –6 –4 –1 25 (Tc = 25ºC) 150 –55 to +150

3.9


Absolute Maximum Ratings (Ta=25ºC)

■

j-a —t

(VC E = –4 V )

200

Characteristics

5

125ºC

100

(ºC/W)

–30ºC

hFE

hFE

25ºC

100

Typ

j-a

50 50

1

20 –0.01

–0.1

–0.5

–1

20 –0.02

–4

–0.1

–1

IC (A)

10

100

IC (A)

■ f T —IE Characteristics (typ.)

■ PC —Ta Derating 30

–10 –5

50

100ms

natural air cooling Silicone grease Aluminum heatsink Unit: mm

1m

s

10

m

s

PC (W)

30

–1 –0.5 Without heatsink natural air cooling

20 10 0 0.005 0.01

W

ith

0.05 0.1

0.5

1

3

3

5

50

VCE (V)

100

fin

0•

10

10

in

15

–0.1 –0.05

IE (A)

80

20

DC

Typ

IC (A)

fT (MHz)

40

1000

t (ms)

■ Safe Operating Area (single pulse) (VCE = –12V)

60

–4

0.7 1

2 0 0

ite

15

0•

100

he

at

si

2

nk

• 10 0 50 • • 2 50 • 2

Without heatsink

25

50

75

Ta (ºC)

100

125

150

Power Transistor 2SA1567

Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz

ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB

Ratings –100max –100max –50min 50min –0.35max 40typ 330typ

(Ta=25ºC) Unit µA µA V

External Dimensions TO220F (full-mold)

10.0

4.2 2.8

3.3

V MHz pF

a b

2.6

VCC (V) –24

RL (Ω) 4

IC (A) –6

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –120

1.35 1.35 0.85

IB2 t on t stg tf (mA) (µs) (µs) (µs) 120 0.4typ 0.4typ 0.2typ

2.54

(13.5)

Typical Switching Characteristics (common emitter)

0.45

2.54 2.2


B C E

■ IC —VCE Characteristics (typ.)

–10

–5

0 –2

–6

–10

–100

VCE (V)

–0.2

–0.4

■

j-a —t

(VC E = –1V )

500

ure ) se t emp era º C (C ture ase ) te m p e ra tu re )

C (C a

–0.6

–0.8

–1.0

–1.2

VBE (V)

■ hFE —IC Temperature Characteristics (typ.) (VC E = –1V)

Characteristics

4

125ºC

Typ

25ºC

100

1

j-a

100

(ºC/W)

hFE

– 30ºC

hFE

0 0

–1000 –3000

IB (mA)

■ hFE —IC Characteristics (typ.) 500

25º

12

0 –4

–2

–1A

–5mA –3

(Ca

–3A

–10mA

–2

–4

–9A

–30

IC = –12A

–0.5 –6A

–1

rat

–20mA

pe

–4

–6 tem

–40mA

–8

se

–6

–1.0

IC (A)

–60mA

–2

( VC E = –4 V)

–12

–100mA

–8

0

■ IC —VBE Temperature Characteristics (typ.)

5ºC

0mA

–15

VCE (sat) (V)

IC (A)

–10

■ VCE (sat)—IB Characteristics (typ.) –1.5

I –20B = 0m A

–12

C0.5

16.9

Symbol

4


Unit V V V A A W ºC ºC

8.4

Ratings –50 –50 –6 –12 –3 35 (Tc = 25ºC) 150 –55 to +150

3.9

Symbol VCBO VCEO VEBO IC IB PC Tj Tstg

0.8

Absolute Maximum Ratings (Ta = 25ºC)

0.5

50

50

30 –0.02

30 –0.02

–0.1

–1

–10

–0.1

–1

IC (A)

0.3


1000

35

10


30

0m

s

s

DC

–5

s

m

–10

Typ

100

■ PC —Ta Derating

–30

10

ite

100

150

•1 50 0 • •2 2

nk

20

10

si

Without heatsink natural air cooling

at

–0.5

he

PC (W)

20

fin

–1

in

30

ith

IC (A)

W

fT (MHz)

10

t (ms)

1m 40

1

IC (A)

■ f T —IE Characteristics (typ.) 50

–10

• 10

50 • 50 • 2 –0.1 0 0.05 0.1

1

IE (A)

12

–0.05 –3

–5

–10

–50

VCE (V)

–100

2 0 0

Without heatsink

25

50

75

100

125

150

Ta (ºC)

81


ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB

Ratings –100max –60max –60min 50min –0.35max –2.5max 40typ 330typ

(Ta=25ºC) Unit µA mA V

External Dimensions TO220F (full-mold) 10.0

V V MHz pF

a b

RL (Ω) 4

IC (A) –6

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –120


2.54

0.45

2.54 2.2


±

B C E

■ IC — VCE Characteristics (typ.) I –20 B = 0m A

–12 –10

■ VCE (sat) — IB Characteristics (typ.)

( VC E = –1 V)

–12

–150

–100mA

–10 –1.0

0

–1

–2

–3

–4

–5

0 –7 –10

–6

–100

VCE (V)

■ hFE — IC Characteristics (typ.) 300

0

–0.2

–0.4

125ºC

) tu re p e ra s e te m º C (C a

25º

–30

–1.0

–1.2

j-a — t

Characteristics

4

–30ºC

(ºC/W)

1

j-a

hFE 10

10

–0.8

25ºC

100

hFE

■

(VC E = –1V )

300

Typ

–0.6

VBE (V)

■ hFE — IC Temperature Characteristics (typ.)

100

re)

ure

)

0

–1000 –3000

IB (mA)

(VC E = –1V)

atu

rat

–2

12

0

per

pe

–10mA

–2

tem

–4

–1A

C (C ase

–0.5

–20mA

–6

–3A

tem

–4

–9A –6A

se

–40mA

(Ca

–6

–8 IC = –12A

5ºC

–60mA

IC (A)

VCE (sat) (V)

–8

IC (A)

(Unit : mm)

■ IC — VBE Temperature Characteristics (typ.)

–1.4

mA

C0.5

2.6

1.35 1.35 0.85

Typical Switching Characteristics (common emitter) VCC (V) –24

4.2 2.8

3.3

16.9

Test Conditions VCB = –60V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A IECO = –10A VCE = –12V, IE = 0.5A VCB = –10V, f = 1MHz

(13.5)

Symbol

4



8.4

Ratings –60 –60 –6 12 –3 35 (Tc=25ºC) 150 –55 to +150

0.8


3.9


0.5 2 –0.02

–0.1

–1

IC (A)

2 –0.02

–10 –12

■ f T — IE Characteristics (typ.)

–1

–10 –12

IC (A)


50

–0.1

0.3

–10

10 DC

0m

s

s


30

s

–5

m 10

ite

0•

10 50 • 50 • 2

–0.1 0 0.05 0.1

1

IE (A)

10

–0.05 –3

–5

–10

–50

VCE (V)

–100

2 0

• 15

nk

20

si

150

at


he

PC (W)

20

fin

–1

in

30

ith

IC (A)

W

fT (MHz)

1000

35

–0.5

82

100

■ PC — Ta Derating

–30

Typ

10

t (ms)

1m 40

1

100

2

• 10

0•2

Without heatsink

0

25

50

75

Ta (ºC)

100

125

150


External Dimensions FM100 (T03PF) 0.8 ±0.2

15.6 ±0.2

V MHz pF

3.3±0.2

a b

* Rank: O (50 to 100), P (70 to 140), Y(90 to 180) Typical Switching Characteristics (common emitter) VCC (V) –40

RL (Ω) 10

IC (A) –4

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –400

5.5±0.2 3.45±0.2

3.0

ICBO IEBO V(BR) CEO hFE * VCE (sat) fT COB


Ratings –10max –10max –120min 50min –0.5max 20typ 300typ

5.5

Test Conditions VCB = –120V VEB = –6V IC = –50mA VCE = –4V, IC = –3A IC = –3A, IB = –0.3A VCE = –12V, IE = 0.5A VCB = –10V, f = 1MHz

3.3

Symbol

1.6



9.5±0.2

Ratings –120 –120 –6 –8 –3 75 (Tc=25ºC) 150 –55 to +150

1.75

16.2


23.0 ±0.3


0.8

2.15 1.05 5.45±0.1


+0.2 –0.1

5.45±0.1

1.5

B

4.4

1.5

C

E

+0.2

0.65

3.35 –0.1

a) Part No. b) Lot No. (Unit : mm)


■ IC — VCE Characteristics (typ.) A

–100m

–75mA

–6

–2

–3

0

–0.2

–0.4

0

–1.0

0

(VC E = –4V)

200

tu re

atu

p e ra e te m º C (C as

–1.0

–1.5

VBE (V)


■ hFE — IC Characteristics (typ.)

–30

–0.5

IB (mA)

VCE (V)

re)

re) atu per 125

–4

– 4A –2A –0.6 –0.8

■

j-a — t

(VC E = –4V )

300

Characteristics

4

125ºC

Typ

25ºC

hFE

hFE

100 100

50

–30ºC

(ºC/W )

–1

0

1

j -a

0

–2

IC = – 8A

IB=–10mA

per

tem se

–1

–2

0

–4

se t em

–25mA

IC (A)

–50mA

–4

)

–2

VCE (sat) (V)

IC (A)

–6

(Ca

–3

–1

C (C a

50

0

–2

( VC E = –4 V)

–8

A

m 50

ºC

m

A

A

0m


–3

25º

–8

0.5

50

30 –0.02

–0.1

–0.5 –1

30 –0.02

–5 –8

0.2 –0.1

IC (A)

–0.5

–1

10

100

IC (A)

(VCE = –12V)

30

■ PC — Ta Derating 80

–20 10

–10

Typ

1000 2000

t (ms)

■ Safe Operating Area (single pulse)


m

DC

–5

10

s

60

0m

s

W it

20

te

40

he at si nk

PC (W)

ni

IC (A)

fi

–1

in

fT (MHz)

h

10

–0.5 20

Wit h ou t h e a t sin k n a t u ra l a ir c oolin g

0 0.02

1

–5 –8

0.05 0.1

0.5

IE (A)

1

5 8

–0.1 –5

–10

–50

VCE (V)

–100 –150

3.5 0

Wit h ou t h e a t sin k

0

25

50

75

100

125

150

Ta (ºC)

83

Power Transistor 2SB1622

min

max –100 –100

Unit

µA VCB = – 200V VEB = – 5V µA IC = – 30mA – 200 V VCE = – 4V, IC = –10A 5000 30000 IC = –10A, IB = –10mA –2.5 V IC = –10A, IB = –10mA –3.0 V VCE = –12V, IE = 2A 60 MHz VCB = –10V, f = 1MHz pF 270 Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) *

ICBO IEBO VCEO hFE* VCE(sat) VBE(sat) fT COB

3.3 ±0.2

a b

1.75 ±0.15 2.15±0.15

■ IC — VCE Characteristics (typ.)

+0.2

IB1 (mA) –10

VCE (sat) ( V )

IB = –0.3mA

5

–2

–4

a) Part No. b) Lot No. B

C

E

(Unit : mm)

■ VCE (sat) — IB Temperature Characteristics (typ.) 125ºC 75ºC 25ºC – 30ºC

IC = – 15A IC = – 10A IC = – 5A

–1

0 –0.2

–1

–10

VCE ( V )

–1

0 –0.1

–100 –200

–1

–10

–100 –200

IB (mA)

■ IC — VBE Temperature Characteristics (typ.) (VCE = – 4V)

15

–3

IC = – 5A

–2

IB (mA)

■ VCE (sat) — IB Temperature Characteristics (typ.)

3.35±0.2

–3

–2

–6

+0.2

0.65 –0.1

15.6±0.2 1.5 4.4 1.5


VCE (sat) ( V )

–3

IC (A)

–0.5mA

0

VBB2 (V) 5


–0.8mA

10

0

VBB1 (V) –10

–1.5mA –1.0mA

.0

–50mA –15mA –5.0mA

IC (A) –10

–3

m A

15

RL (Ω) 4

0.8

1.05 –0.1 5.45±0.1

5.45 ±0.1

Typical Switching Characteristics VCC (V) – 40

5.5 ±0.2 3.45 ±0.2

3.0

Test Conditions

External Dimensions

23.0 ±0.3

Symbol

(Ta=25ºC) Ratings typ

16.2



0.8 5.5 ±0.2

Ratings –200 –200 –5 –15 –1 85 (Tc=25ºC) 150 –55 to +150

9.5 ±0.2


1.6 3.3


■ hFE — IC Characteristics (typ.) 100000

IC = –10A

VCE = – 4V

50000

125ºC 75ºC 25ºC – 30ºC

5

–100 –200

–10

–1

–2

hFE

ton• tstg • tf (µsec)

50ºC 25ºC 0ºC –30ºC –55ºC

–1

–5

–10

–20

tstg 1

tf

0.5

Characteristics

1.0 0.5

0.1 –0.5

–1

–5

–10

–20

1

10

80

10

0m

60

at nk

si

5 10

40 30


–0.1 –0.05 –3

he

–0.5

50

ite

–1

fin

D.

in

IC (A)

70

s

C.

20

90

ith W

40

1000 2000


s

–10

Ta = 25ºC (single pulse)

m 10

60

100

t (sec)

■ Safe Operating Area

–5

fT (MHz)

j-a — t

ton 0.1 –0.2

–50 –30

IE (A)

–20

Ta = 25ºC VCC = –40V – IB1 = IB2 = 10mA

5

80

0.5 1

–10

3.0

IC (A)


0.1

■

10

IC (A)

84 70

–5

–3

■ ton• tstg •t f — IC Characteristics (typ.)

VCE = – 4V

5000

0 0.02

–1

VBE (V)

10000

–0.5

–0.5

IC (A)

(ºC/W)

–1

150ºC 125ºC 100ºC 75ºC

1000 –0.2

1000 –0.2

0

■ hFE — IC Temperature Characteristics (typ.) 50000

5000

50ºC 25ºC 0ºC – 30ºC – 55ºC

IB (mA)

100000

10000

j-a

0 –0.2

Ta=150ºC 125ºC 100ºC 75ºC

PC (W)

–1

hFE

10

IC (A)

VCE (sat) ( V )

typ –2

20 10

Without heatsink

0 –10

–100

VCE ( V )

–500

0

25

50

75

Ta (ºC)

100 125 150

Power Transistor 2SC3852


Ratings 10max 100max 60min 500min 0.5max 15typ 50typ


4.2 2.8

3.3

C0.5

16.9

V MHz pF

a b

2.6

1.35 1.35 0.85

Typical Switching Characteristics (common emitter) VCC (V) 20

RL (Ω) 20

IC (A) 1.0

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 15

IB2 t on t stg tf (mA) (µs) (µs) (µs) –30 0.8typ 3.0typ 1.2typ

2.54

(13.5)

3.9

ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB

Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = –0.2A VCB = 10V, f = 1MHz

8.4

Symbol

4



Ratings 80 60 6 3 1 25 (Tc=25ºC) 150 –55 to +150


0.8


0.45

2.54 2.2


B C E

(Unit : mm)



3 mA

=1

3

1.0

2

( VC E = 4 V)

8mA

2

IB


1.5

0

1

2

3

4

5

0 0.001

0.005 0.01

VCE (V)

0.05 0.1

re )

(C a s

e te mp

e ra tu

)

ure

s e te m 25ºC

– 3 0 ºC

0.5

0

1.0 1.1

VBE (V)

■ hFE — IC Temperature Characteristics (typ.) (VCE=4V)

2000

tu re

rat

0

0.5 1

IB (A)


(C a

ºC 125

2A IC =1A

6

p e ra

pe

1 3A

0.5mA 0

tem

0.5

1mA

se

1

(Ca

2mA

IC (A)

VCE (sat) (V)

IC (A)

3mA

)

5mA 2

■

j-a — t

(VC E = 4V )

2000

Characteristics

5

125ºC 1000

25ºC

500

–30ºC

j-a

500

(ºC/W)

Typ

hFE

hFE

1000

100 0.01

0.1

0.5

1

3

100 0.01

0.1

IC (A)

3

1

10

100


10

1

k

in ts

a he

0.5

ite fin in

PC (W)

ith

IC (A)

20

W

DC

10 10 ms 0m s

s

1m

20

Typ

VCB = 10V IE = –2A 1000

t (ms)

■ Safe Operating Area (single pulse) (VCE = 12V)

5

fT (MHz)

1

0.5

IC (A)

■ f T — IE Characteristics (typ.) 30

0.5

1

10

10 Without heatsink natural air cooling

0.1 0 –0.005 –0.01

–0.05 –0.1

IE (A)

–0.5 –1

–2

0.05 3

Without heatsink

5

10

50

VCE (V)

100

0

0

50

100

150

Ta (ºC)

85


Electrical Characteristics ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB


Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ


4.2 2.8

3.3

C0.5

V MHz pF

16.9

Test Conditions VCB = 100V VEB = 15V IC = 25mA VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = –0.5A VCB = 10V, f = 1MHz

4

Symbol


8.4 a b

2.6

1.35 1.35 0.85


RL (Ω) 4

IC (A) 5

IB1 (A) 0.1

IB2 (A) –0.1

t on (µs) 0.5typ

t stg (µs) 2.0typ

tf (µs) 0.5typ

2.54

(13.5)

Ratings 100 50 15 10 3 35 (Tc=25ºC) 150 –55 to +150

3.9


0.8


0.45

2.54 2.2


B C E

(Unit: mm)



10


IB = 35mA 30mA

8

( VC E = 4 V)

10

1.5

8

4

0 0.002

6

0.1

1

) ure

)

re)

rat

tu re

atu

p e ra s e te m

tem se

º C (C a

0.5

1.0

1.2

VBE (V)

■ hFE — IC Temperature Characteristics (typ.) (VC E = 4V)

per

pe

0 0

2

IB (A)


C ( Ca

–30

0.01

VCE (V)

1000

2

5A

3A

IC = 1A

25º

5mA

2

e t em

10A

2

0 0

as

4 0.5

(C

10mA

4

6

5ºC

15mA

1.0

12

20mA

6

IC (A)

VCE (sat) (V)

IC (A)

25mA

■

j-a — t

(VC E = 4V )

1000

Characteristics

4

25ºC

hFE

C

–30º

1

j-a

hFE

500

(ºC/W)

125ºC

Typ

500

0.5 100 0.02

0.1

0.5

1

5

10

100 0.02

0.1

0.5

IC (A)

5

10

0.3 1

10

IC (A)


100


30 1m

10

ite he

150

–10

5

50

10

VCE (V)

100

2 0

• 15 0 •2 1 50 • 50 • 2 00 • 10 0 •2

nk

–5

10


si

–1

at

–0.5

0.2 3

fin

PC (W)

20

in

IC (A)

ith

DC

W

fT (MHz)

30

1

IE (A)

86

s

s

5

0.5 0 –0.05 –0.1

m

10

0m

10


s

10

Typ 20

1000

t (ms)


30

1

Without heatsink

0

25

50

75

Ta (ºC)

100

125

150


ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB


Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ


V V MHz pF

a b

RL (Ω) 4

IC (A) 6

VBB1 (V) 10

VBB2 (V) –5

IB1 (A) 0.12

C0.5

2.6

1.35 1.35 0.85


4.2 2.8

3.3

16.9

Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz

2.54

IB2 t on t stg tf (A) (µs) (µs) (µs) –0.12 0.6typ 1.4typ 0.4typ

(13.5)

Symbol

4


(Ta=25ºC) Unit V V V A A W ºC ºC

8.4

Ratings 60 60 6 ±12 3 35 (Tc=25ºC) 150 –55 to +150

0.8


3.9


0.45

2.54 2.2


B C E

(Unit: mm)

■ IC — VCE Characteristics (typ.) mA

0 15

( VC E = 1 V)

12

100mA

10 1.0

0

0

2

4

0.1

VCE (V)

0

3

■

50

ºC 25 C 0º 3 –

10

10 5 3 0.02

10 12

0.1

1

IC (A)

10 12

0.2 1

10

tu re p e ra

40 natural air cooling Silicone grease Aluminum heatsink Unit: mm

10

DC

30

20

ite he at si

0.5 10


0.1 –5 –10 –12

0.05 3

5

10

50

VCE (V)

100

2 0

nk

10

fin

1

in

PC (W)

s

ith

IC (A)

0m

W

fT (MHz)

20

s

5

s

m

10

10

Typ

1000


30 1m

–1

e te m

100

t (ms)


IE (A)

(C a s

0.5

IC (A)


–0.5

– 3 0 ºC

1

j-a

hFE

50

0 –0.05 –0.1

)

rat

Characteristics

5

ºC

100

30

1.0 1.1

0.5

125 100

1

5ºC

j-a — t

(VCE = 1V)

400

Typ

0.1

0

VBE (V)

■ hFE — IC Temperature Characteristics (typ.) (VCE = 1V)

400

5 3 0.02

12

2

IB (A)


hFE

1

re)

ure

)

0 0.005 0.01

6

6A

3A

IC = 1A

9A

(ºC/W)

2

atu

pe

4 12A

IB = 10mA

per

tem

20mA

4

6

0.5

tem

6

8

C (C ase

40mA

25º

VCE (sat) (V)

8

se

60mA

IC (A)


1.3

(Ca

10


IC (A)

20

0m

A

12

150 • 15 0• 2 1 50 • 50 • 2 00 • 10 0•2 Without heatsink

0

25

50

75

100

125

150

Ta (ºC)

87



V V MHz pF

a b

RL (Ω) 16.7

IC (A) 3

VBB1 (V) 10

VBB2 (V) –5

IB1 (A) 0.3

C0.5

2.6

1.35 1.35 0.85


4.2 2.8

3.3

16.9

ICBO IEBO V(BR) CEO hFE VCE (sat) VBE (sat) fT COB


Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ

(13.5)

Test Conditions VCB = 200V VEB = 8V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCE = 12V, IE = –0.5A VCB = 10V, f = 1MHz

8.4

Symbol


0.8

Ratings 200 120 8 7 (pulse 14) 3 30 (Tc=25ºC) 150 –55 to +150

3.9


4



2.54

IB2 t on t stg tf (A) (µs) (µs) (µs) –0.6 0.5max 3max 0.5max

0.45

2.54 2.2


B C E

(Unit: mm)

■ IC — VCE Characteristics (typ.) 7


mA

200 5


3

( VC E = 4 V)

7

0mA

15

6 A

100m

1

2

3

0.1

VCE (V)

1

■

re )

rat

j-a — t

(VCE = 4V)

300

ra tu

atu

pe

e te m pe (C a s – 3 0 ºC

0.5

1.0 1.1

VBE (V)


300

per

tem

0 0

2

IB (A)


re)

ure

)

0 0.005 0.01

4

1

5A

3A

IC = 1A 0

C (C a

5ºC

1 0

se t em

se

2

IB =10mA

25º

2

3

1

(Ca

20mA

4

12

3

5

2

IC (A)

4

60mA 40mA

VCE (sat) (V)

IC (A)

5

Characteristics

5

125ºC

Typ 100

C –30º

20 0.01

0.1

0.5

1

j-a

50

50

20 0.01

5 7

0.1


1

5 7

0.5

0.2 1

10

20

20 W

0.1 –0.1

–1

IE (A)

88

–5

0.05 5

10

50

VCE (V)

100

200

2 0

2

00

nk


0•

•1

si

50 • 50 • 2

15

100

at

0•

he

15

10 10

ite

0.5

fin

1

in

PC (W)

ith

IC (A)


s 10m

20

30

0µ s

5

30

1000


10

10

Typ

0 –0.01

100

t (ms)


40

0.5

1

IC (A)

IC (A)

fT (MHz)

(ºC/W)

hFE

hFE

25ºC

100

•2

Without heatsink

0

25

50

75

Ta (ºC)

100

125

150

Power Transistor 2SD2141

Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA

ICBO IEBO V(BR) CEO hFE VCE (sat )

Ratings 10max 20max 330 to 430 1500min 1.5max



4.2 2.8

3.3

C0.5

16.9

Symbol

4



V a b

2.6

0.8

Ratings 380±50 380±50 6 6 (pulse 10) 1 35 (Tc=25ºC) 150 –55 to +150

3.9


8.4


2.54

(13.5)

1.35 1.35 0.85

0.45

2.54 2.2


B C E

(Unit: mm)



150mA 120mA

( VC E = 4 V)

10

A

A 18m 4mA

2

4

0

6

0.2 0.5

1

5

VCE (V)

10

(VCE = 2V)

10000 5000

ra tu

ure rat

pe tem

2.0

2.4

VBE (V)


■

j-a — t

(VCE = 2V)

10000 5000

Typ

– 3 0 ºC

C ( Ca 25º

1.0

IB (mA)


re )

e)

0 0

50 100 200

e te m pe

se

(C C 5º

0

(C a s

1A

12

0

)

ur mp

1

5

at

IC = 7A 5A

3A

as

IB = 1mA

er

VCE (sat) (V)

5

2

te

A 90m 0mA 6

e

20m

2mA

IC (A)


3

IC (A)

10

Characteristics

5

25

(ºC/W)

1000 500

ºC

5 –5

ºC

1

j-a

hFE

hFE

5ºC

12

1000 500 100 50

0.5

100 50

10 0.02

0.1

0.5

1

5

20 0.02

10

0.1

0.5 1.0

IC (A)

10

0.1

1

10

100

IC (A)



20


10 DC

30

ite he

PC (W)

20

fin

IC (A)

in

0.5

ith

1 20

W at

fT (MHz)

1ms

5

30

s 10m s 0m 10

Typ

1000

t (ms)


40

5

si

0 –0.01


–0.05 –0.1

–0.5 –1

IE (A)

–5

0.01 1

150 •

10

0.05

nk

0.1 10

50 • 50 • 2 100 •

5

10

50 100

VCE (V)

500

2 0

Without heatsink

0

25

50

150 • 100

2

•2

75

100

125

150

Ta (ºC)

89


ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b


Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min


4.2 2.8

3.3

C0.5

V V mJ

16.9

Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

8.4

Symbol


a b

2.6

0.8 1.35 1.35 0.85

Typical Switching Characteristics VCC (V) 12

RL (Ω) 12

IC (A) 1

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 30

IB2 (mA) –30

t on (µs) 0.25

t stg (µs) 0.8

tf (µs) 0.35

2.54

(13.5)

Ratings 65±5 65±5 6 ±6 (pulse ±10) 1 30 (Tc=25ºC) 150 –55 to +150

3.9


4



0.45

2.54 2.2


B C E

(Unit: mm)


■ VCE (sat) — IB Temperature Characteristics (typ.) 20mA


(IC = 1.5A)

0.75

6

30mA 5

8

5mA 4

3mA

2

0

4

0.5

IC (A)

VCE (sat) (V)

IC (A)

10mA 6

Ta = –55ºC 25ºC 75ºC 125ºC

0.25

2

IB = 1mA

0

1

2

3

4

Ta=55ºC 25ºC 75ºC 125ºC

3

1 0

5

1

5

10

VCE (V)

50 100

0

400

0

0.5

1.0

IB (mA)


(VCE = 1V)

5000

1.5

VBE (V)


■

j-a — t

(VCE = 1V)

5000

Characteristics

5

1000 500

Ta = –55ºC 25ºC 75ºC 125ºC

100

100

0.05 0.1

0.5

1

5

10

50 30 0.01

0.05 0.1

0.5

IC (A)

5

10

0.3

1

5

10

50 100


20

30 natural air cooling Silicone grease Aluminum heatsink Unit: mm

c mse 0.5 ec 1ms c e

10

10 0m

10

D.

C

at si nk

IC (A)


5

he

10

0.5

ite

15 0 100 • 150 • •1 00 2 •2 50 • 5 0•2

fin

)

in

ºC

1

20 ith

25

W

c

=

se

(T

c

10

ms

5 Typ

15

500 1000

t (ms)


25 20

1

IC (A)

■ f T — IE Characteristics (typ.) 30

0.5

PC (W)

50 30 0.01

1

j-a

hFE

hFE

500

fT (MHz)

(ºC/W)

Typ 1000

Without heatsink

0 –0.01

0.1 –0.05 –0.1

–0.5 –1

IE (A)

90

–5 –10

1

5

10

VCE (V)

50

100

0

0

50

100

Ta (ºC)

150


Tj Tstg

W

ICBO IEBO VCEO hFE VCE (sat) VBE (sat)

Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA

Ratings 100max 10max 150min 2000min 1.5max 2.0max



4.2 2.8

3.3

C0.5

V V

16.9

Symbol

4


8.4

Unit V V V A A

a b

2.6

ºC ºC

1.35 1.35 0.85 2.54

2.54

(13.5)

PC

Ratings 200 150 6 8 1 35 (Tc=25ºC) 2 (Ta=25ºC, No Fin) 150 –55 to +150

0.8

Symbol VCBO VCEO VEBO IC IB

3.9


0.45

2.2

B C E


91

Power Transistor FP812

ICBO IEBO VCEO hFE VCE (sat)


Ratings 10max 10max –120min 70min –0.3max


V

a b

Typical Switching Characteristics VCC (V) –12

RL (Ω) 4

IC (A) –3

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –30

4.2 2.8

3.3

C0.5

16.9

Test Conditions VCB = –120V VEB = –6V IC = –50mA VCE = –4V, IC = –3A IC = –3A, IB = –0.3A

2.6

IB2 (mA) 30

t on (µs) 2.5

t stg (µs) 0.4

tf (µs) 0.6

1.35 1.35 0.85 2.54

(13.5)

Symbol

4



8.4

Ratings –120 –120 –6 –8 (pulse –12) –3 35 (Tc=25ºC) 150 –55 to +150

3.9


0.8


0.45

2.54 2.2


B C E

(Unit: mm)

■ IC — VCE Characteristics (typ.) –8

–3

00

mA

A

0m

0

–2

■ VCE (sat) — I B Characteristics (typ.) –100mA

A

0m

5 –1


–2

–75mA

–6

–6

VCE (sat) (A)

IC (A)

–4 –25mA –2

–1

Ic = –1A

IB = –10mA

0

–1

–2

–3

IC (A)

Ic = –5A

–50mA

0

(VBE = –4V)

–8 Ic = –3A

0 –5

–4

–10

–4 Tc = –40ºC 25ºC 75ºC 125ºC

–2

–50 –100

VCE (V)

0

–500 –1000 –2000

0

–0.5

IB (mA)


■ hFE — IC Temperature Characteristics (typ.) (VCE = –4V)

500

–1.0

–1.5

VBE (V)

■

j-a — t

(VCE = –4V)

500

Characteristics

50 )

ºC

100

75ºC 25ºC 100

j-a

hFE

hFE

Typ

(ºC/W)

Tc = 125ºC

–55ºC 50

30 –0.01

30 –0.01

–0.5 –1

–5 –8

NO

–0.05 –0.1

–0.5

IC (A)

–1

–5 –8

–12 –10

0.1 0.05 0.0002 0.001

0.01

0.1

se c

(T

c

20

natural air cooling Without heatsink

0•

2

nk

100

si

10

20

at

0•

–0.5

he

20

ite

PC (W)

fin

C)

in

5º

–1

ith

=2

30 W

IC (A)

100


c se c m se 0m 10

C

fT (MHz)

10


1m

10

D.

20

10

1

40

–5

Typ

Tc = 25ºC

t (sec)


30

25

1 0.5

IC (A)


Fin

= (Ta

Single Pulese

50 –0.05 –0.1

10 5

• 10

0•2

Without heatsink

0 0.01

0.05 0.1

0.5

IE (A)

92

1

5

10

–0.1 –3

–5

–10

–50

VCE (V)

–100 –150

0

0

50

100

Ta (ºC)

150

Power Transistor MN611S

ºC ºC

VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA

max

115 800 0.08 1.25

10 10 125 1500 0.12 1.5

105 400

Unit µA µA V V V mJ

45

4.44±0.2

10.2±0.3 (1.4)

ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B

min

+0.3

Test Conditions

1.3±0.2

a

1.6

b +0.2

(1.5)

Tj Tstg

W

Symbol

External Dimensions TO220S



RL (Ω) 12

VBB1 (V) 10

VBB2 (V) –5

IC (A) 1

+0.2

0.86 –0.1

0.4±0.1

1.2±0.2

tf IB2 ton tstg (mA) (µs) (µs) (µs) –30 0.2typ 5.7typ 0.4typ

IB1 (mA) 30

0.1 –0.1

1.27±0.2

+0.3

PC


Unit V V V A A

10.0 –0.5

Ratings 115±10 115±10 6 ±6 (pulse ±10) 1 50 (Tc=25ºC) 1.2 (Ta=25ºC, No Fin) 150 –55 to +150

3.0 –0.5


8.6±0.3


2.54±0.5

2.54±0.5


■ IC — VCE Characteristics (typ.) (Ta = 25ºC)

8

(Unit: mm)

■ VCE (sat) — IB Characteristics (typ.) (Ta = 25ºC)

0.75

7

30mA

6

20mA

VCE (sat) (V)

IC (A)

IC = 2A

10mA

5

5mA

4 3

3mA

0.5

IC = 1.2A

0.25

2 IB = 1mA

1

IC = 0.5A

0

0 0

1

2

3

4

5

0

6

10

VCE (V)

100

1000

IB (mA)

■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) (IC = 1.2A)

0.75

■ IFEC — VFEC Temperature Characteristics (typ.)

(VCE = 1V)

7

7 6

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

0.5 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

0.25

0

4 3

100

2

1

1 0 0

0.5

IB (mA)

typ

10

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

30 0.01

0.1

Ic (A) j-c • j-a — t

Characteristics (Single pulse)

tstg Ta = 25ºC VCC = 12V IB1 = –IB2 = 30mA

1

tf ton

0.1

1

0

10

1

j-a FR4 (70 • 100 • 1.6mm) Use substrate

3

■ PT — Ta Derating

(Ta = 25ºC)

20

2

Ic (A)

■ Safe Operating Area (Single pulse)

(Tc = 25ºC)

1.5

10

Ic (A)

50

1.0


(VCE = 1V)

5000

hFE

hFE

1

0.1

0.5

VFEC (V)


100

30 0.01

60

10

50

j-c 1

PC (W)

40

IC (A)

(ºC/W)

0

1000

100

j-c • j-a

1.5

ton • tstg • tf (µsec)

(Ta = 25ºC) (VCE = 1V)

5000

1000

1.0

VBE (V)


10

3

2

1000

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

4

0 10

0

■

5

IFEC (A)

5

IC (A)

VCE (sat) (V)

6

PT =50µs PT =500µs PT =1ms PT =10ms

1

30 20

0.1 0.001

Without heatsink

0.01

0.1

t (s)

1

10

10

0

0.1 1

10

VCE (V)

100 200

0

25

50

75

100

Ta (ºC)

125

150

93

Power Transistor MN638S

Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA


4.44±0.2

10.2±0.3

1.3±0.2

V

a +0.3

ICBO IEBO V(BR) CEO hFE VCE (sat)


Ratings 10max 20max 330 to 430 1500min 1.5max

1.6

b +0.2

(1.5)

Symbol

(1.4)



10.0 –0.5

Ratings 380±50 380±50 6 6 (pulse 10) 1 60 (Tc=25ºC) 150 –55 to +150

0.1–0.1

1.27±0.2

3.0 –0.5

+0.3


8.6±0.3


+0.2

0.4±0.1

0.86 –0.1 1.2±0.2 2.54±0.5

2.54±0.5


150mA 120mA

A

A 18m 4mA

4

0

6

0.2 0.5

1

5

VCE (V)

10

(VCE = 2V)

10000 5000

Typ

hFE

hFE

5ºC

12

1000 500 100 50

0.5

IC (A)

94

1000 500

25

ºC 5ºC

–5

100 50 0.1

1

5

10

20 0.02

0.1

0.5 1.0

IC (A)

ra tu

re )

e)

)

ur at

25º

(C a s

1.0

2.0

2.4

VBE (V)


10000 5000

10 0.02

0 0

50 100 200

IB (mA)


ure

er

se

(C C

C ( Ca

5º 12

2

0

■

5

10

j-c •

j-a —t

Characteristics

100 j-c • j-a (ºC/W)

0

rat

mp

pe

1A

e te m pe

5

te

1

5A

– 3 0 ºC

IC = 7A 3A

as

IB=1mA

e

5

2

tem

A 90m 0mA 6

IC (A)

20m

2mA

IC (A)

(VBE =4V)

10

3

VCE (sat) (V)

10


■ VCE (sat) — I B Characteristics (typ.)


j-a

10

j-c

1

0.1 0.001

0.01

0.1

t (s)

1

10

Surface-mount Power Transistor SSD103

Test Conditions


VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH

min

60 400

65 800 0.11 1.25

max 10 10 70 1500 0.15 1.5

80

External Dimensions SOP8

Unit 0.7±0.2

µA µA V

5.4Max 8

0 to 10° 5

a b

V V mJ

c

6.2±0.3

A A W °C °C

Symbol


0 to 0.1

d

1

4 +0.15

1.27±0.25

0.42 –0.05

+0.15

0.17 –0.05

(drain heatsink copper foil area 25•25mm) 5.0±0.2

1.5±0.2

*1: FR4 70mm•100mm• 1.6mm

0.5±0.2


Unit V V V

4.4±0.2

Symbol Ratings VCBO 65±5 65±5 VCEO VEBO 6 IC 6 IC (pulse) 10 (Pw 1mS, Duty 25%) 10 IB 1.5 *1 PC Tj 150 Tstg –55 to +150

4.7Max


a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm)

■ VCE (sat) — I C Temperature Characteristics (typ.)


30mA

(VCE = 1V)

6 IC/IB = 100

20mA

6


0.75

5 10mA

5mA

3

3mA

2

Ta = –55ºC 25ºC 75ºC 125ºC

0.25

0

1

2

3

4

Ta = 125ºC 75ºC 25ºC –55ºC

3 2

IB = 1mA

1 0

4

0.5

IC (A)

IC (A)

4

VCE (sat) (V)

5

1 0

0 0.01

5

0.1

VCE (V)

1

0

10

0.5


1.5

■ ton • tstg •t f — IC Characteristics (typ.)

(VCE = 1V)

2000

1.0

VBE (V)

IC (A)

5

tstg

ton• tstg • tf (µS)

1000

hFE

500 Ta = 125ºC 75ºC 25ºC –55ºC

100

VCC = 12V IB1 = –IB2 = 30mA

1 0.5

tf ton

0.1

50 0.01

0.1

1

10

IC (A)

■ Safe Operating Area

0

1

2

3

IC (A)

(Single pulse)


20

0.5m

10

s s 10m

s

IC (A)

5, 6, 7, 8

1m

5

1

1 0.5 natural air cooling Without heatsink

2, 3, 4

0.1 1

5

10

50

100

VCE (V)

95

Surface-mount Power Transistor Array SDA03

External Dimensions SMD-16A

V

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –50

IB2 (mA) 50

t on (µs) 0.4

t stg (µs) 1.75

9

a b Pin 1

tf (µs) 0.22

8

20.0max ±0.2

19.56

1.4±0.2

IC (A) –1

+0.15 0.3 –0.05

4.0max

RL (Ω) 12

+0.15

0.75 –0.05 16


2.54±0.25

0.89±0.15

0.25

6.8max



Ratings –10max –10max –60min 100min –0.4max

6.3±0.2 8.0±0.5


3.6±0.2

Symbol

1.0±0.3



0 to 0.15

Ratings –60 –60 –6 –6 (pulse –12) –1 3 (No Fin) 150 –55 to +150

9.8±0.3

Symbol VCBO VCEO VEBO IC IB PT Tj Tstg

3.0±0.2



■ IC — VCE Characteristics –6

■ VCE (sat) — IC Temperature Characteristics (typ.) –100mA

–200mA

–5

VCE (sat) (V)

–20mA

–3

–10mA

–2

Ta = 150ºC 75ºC 25ºC –55ºC

–2

–4

IC (A)

–30mA

–4

(VCE = –4V)

–6 IC / IB = 20

–50mA

–5

IC (A)


–3

Ta = 150ºC 75ºC 25ºC –55ºC

–3

–1

–2

IB = –5mA

–1

–1 0

0

–1

–2

–3

–4

0 –0.05

–5

–0.1

–1

0

–10

■ hFE — IC Temperature Characteristics

■

hFE

500

Ta = 150ºC 75ºC 25ºC –55ºC

30 –0.01

–0.1

–1

–10

VCC = 12V IB1 = –IB2 = 50mA

0.5

tf

j-a — t


(Ta = 25ºC)

10 5

1

tstg

0.1 0.05 –0.5 –0.1

–0.5

IC (A)

–1

–5

–10

0.3 0.001

0.01

0.1


–20

1

t (s)

IC (A)


–1.5

ton 1

j-a (ºC/W)

ton• tstg• tf (µsec)

VCE = –4V

–1.0

50

5

50

–0.5

VBE (V)

■ ton • tstg • t f — IC Characteristics

1000

100

0

IC (A)

VCE (V)


4

s

1m

–10 10

3

m

s

Without heatsink

m

PT (W)

IC (A)

20

s

–1

16

2

15

14

13

12

11

10

9

–0.5 1


–0.1 –3

–5

–10

–50

VCE (V)

96

–100

0

2

0

50

100

Ta (ºC)

150

4

6

8

2

Surface-mount Power Transistor Array SDA04



V

VBB1 (V) –10

VBB2 (V) 5

IB1 (mA) –50

IB2 (mA) 50

t on (µs) 0.4

t stg (µs) 1.75

tf (µs) 0.22

9

a b Pin 1

8

20.0max ±0.2

19.56

1.4±0.2

IC (A) –1

+0.15 0.3 –0.05

4.0max

RL (Ω) 12

+0.15

0.75 –0.05

16


2.54±0.25

0.89±0.15

0.25

3.6±0.2



Ratings –10max –10max –60min 100min –0.4max

6.8max


6.3±0.2 8.0±0.5

Symbol

1.0±0.3


0 to 0.15

Ratings –60 –60 –6 –6 (pulse –12) –1 2.5 (No Fin) 150 –55 to +150

9.8±0.3


3.0±0.2



■ IC — VCE Characteristics –6

■ VCE (sat) — IC Temperature Characteristics (typ.) –100mA

–200mA

–5

VCE (sat) (V)

–20mA

–3

–10mA

–2

Ta = 150ºC 75ºC 25ºC –55ºC

–2

–4

IC (A)

–30mA

–4

(VCE = –4V)

–6 IC / IB = 20

–50mA

–5

IC (A)


–3

Ta = 150ºC 75ºC 25ºC –55ºC

–3

–1

–2

IB = –5mA

–1

–1 0

0

–1

–2

–3

–4

0 –0.05

–5

–0.1

–1

0

–10


■

hFE

500

Ta = 150ºC 75ºC 25ºC –55ºC

30 –0.01

–0.1

–1

–10

VCC = 12V IB1 = – IB2 = 50mA

0.5

tf

j-a — t

Characteristics (Single pulse) (Ta = 25ºC)

0.05 –0.5 –0.1

–0.5

–1

–5

10 5

1

tstg

0.1

IC (A)

–10

0.3 0.001

0.01

0.1


–20

1

2

t (s)

IC (A)


–1.5

ton 1

j-a (ºC/W)


VCE = –4V

–1.0

50

5

50

–0.5

VBE (V)

■ ton• tstg• t f — IC Characteristics

1000

100

0

IC (A)

VCE (V)


4

s

1m

–10 10

3

m

20

s

Without heatsink

s

PT (W)

IC (A)

m

–1

16

2

15

10

9

–0.5 1

2

8


–0.1 –3

–5

–10

–50

VCE (V)

–100

0

0

50

100

150

Ta (ºC)

97

Surface-mount Power Transistor Array SDC09


2.54±0.25

0.89±0.15

0.25

+0.15

0.75 –0.05 16

V V mJ

9

a

6.8max




6.3±0.2 8.0±0.5


9.8±0.3

Symbol


3.0±0.2

Ratings 65±5 65±5 6 6 (pulse 10 *) 1 2.8 150 –55 to +150

0 to 0.15


1.0±0.3



+0.15 0.3 –0.05

b Pin 1

8

20.0max ±0.2

19.56

3.6±0.2 1.4±0.2

4.0max

* PW 100µs, Duty 1%


■ IC — VCE Characteristics

■ VCE (sat) — IC Temperature Characteristics (typ.)

8

■ IC — VBE Temperature Characteristics (typ.) (VCE = 4V)

6

0.7 IC /IB =100 0.6

20mA

0.5

IC (A)

5

10mA

4 5mA 3

3mA

1mA

1 0

1

2

3

0.3

3 2 1

0.1

4

0 0.0001

5

Ta=150ºC 100ºC 75ºC 25ºC –55ºC

4 Ta=150ºC 100ºC 75ºC 25ºC –55ºC

0.4

0.2

2

0

5

IC (A)

IB = 30mA

6

VCE (sat) (V)

7

0.001

0.01

0

0.1

0

0.2

0.4

IC (A)

VCE (V)


■ ton• tstg• t f — IC Characteristics

5000

0.6

0.8

1.0

1.2

VBE (V)

■

j-a — t

Characteristics (Single pulse) (Use substrate 42•31•1m)

10

10


VCE=1V

Ta=150ºC 100ºC 75ºC 25ºC –55ºC

100 50 0.01

0.1

1

10

tstg VCC =12V IB1= –IB2 =30mA

1

ton tf

0

0.5

1.0

1.5

2.0

2.5

3.0

0.05 0.1

0.5 ms

5


50• 50 • 1.6mm Use substrate 1

PT (W)

1ms 1

100

6

10 5

10

t (ms)

■ PT — Ta Derating Ta=25ºC

0.5

1

IC (A)


IC (A)

1

0.1 0.1

IC (A)

20

j-a (ºC/W)

hFE

1000

3

3

4 13 15 16

5

6

8

42•31•1.0mm Use substrate

2

14

10ms

11

1 0.1 0.05 0.5

2

1

5

10

VCE (V)

98

50 100

0 –50

0

50

Ta (ºC)

100

150

7

9 10 12

1000

Power Transistor Array SLA8004

PT Tj Tstg

Symbol

V V V A A W W ºC ºC

ICBO IEBO VCEO hFE VCE (sat) VFEC

Test Conditions

Ratings

Test Conditions

Unit

Ratings

31±0.2

µA mA V

VCB = –55V –100max VEB = –6V –60max IC = –25mA –55min VCE = –1V, I C = –3A 80min I C = –6A, IB = –0.3A –0.35max IFEC = 10A 2.5max

VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

External Dimensions SLA 12pin (LF817)

3.2±0.15 •3.8

24.4±0.2

4.8±0.2 1.7±0.1

16.4±0.2

3.2±0.15

V V

a 1.2±0.15

b

5±0.5

VCBO VCEO VEBO IC IB

Unit

PNP

2.45±0.2 (Root dimension)

4 – (R1) R-end +0.2

+0.2

(3)

NPN PNP 60 –55 60 –55 6 –6 12 –12 –3 3 5 (Tc=25ºC, No Fin) 40 (Tc=25ºC) 150 –55 to +150

(Ta=25ºC)

NPN

16±0.2

Symbol


12.9±0.2

Ratings

9.9±0.2


0.85 –0.1 1.45±0.15

0.55 –0.1 4±0.7

11• P2.54±0.1= (27.94) (Root dimension)

31.3±0.2


■ IC — VCE Characteristics (typ.) (PNP)

–12

10

1 2 3 4 5 6 7 8 9 10 11 12

IC (A)

–6

–40mA

–4

(Unit: mm)

40mA 6

–10mA

0

–1

–2

–3

–4

–5

20mA

4

–20mA

–2

IB = 10mA

2 0

–6

2

0

4


(VC E = –1V) (PNP)

300

6

VCE (V)

VCE (V)


(VCE = 1V) (N PN )

400

Typ

Typ

100

hFE

hFE

100

10

50

10

2 –0.02

–0.1

–1

5 3 0.02

–10 –12

IC (A)

■ hFE — IC Temperature Characteristics (typ.) 125ºC

0.1

10 12

■ hFE — IC Temperature Characteristics (typ.) (VCE = 1V) (N PN )

400

ºC 125

25ºC –30ºC

100

1

IC (A)

(VC E = –1V) (PNP)

300

ºC 25 C 0º –3

hFE

hFE

100

10

50

10

2 –0.02

–0.1

–1

5 3 0.02

–10 –12

IC (A)


0.1

1

10 12

IC (A)

■ VCE (sat) — IB Characteristics (typ.) (PNP)

–1.4

(N PN )

1.3


4

1.0 –1.0

8

R2

IC = –12A –9A –6A –3A

–0.5

VCE (sat) (V)

VCE (sat) (V)


100mA

1

8

–60mA

IC (A)

m 50

60mA

–8

0

A

A 0m –100mA

20

I –20 B = 0m A

–10

(N PN )

12

A

m –150

R1: 500Ω Typ. R2: 500Ω Typ.

0.5

–1A

12A

IC = 1A 0 –7 –10

–100

IB (mA)

–1000 –3000

9

5

0 5

10

3A

100

6A

3 6

7 10

2

12

9A R1 1

1000

11

3000

IB (mA)

99

Surface-mount Power Transistor Array SPF0001

Tj Tstg


(Ta=25ºC) Unit V V V A A W ºC ºC

Symbol

Test Conditions


VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A L = 10mH


min

105 400

max 10 10 125 1500 0.12 1.5

115 800 0.08 1.25

45

External Dimensions SPF 20pin

Unit 14.74±0.2

µA µA V

13.04±0.2

+0.1

20

1.0 –0.05 Fin thickness

11

a

V V mJ

b 10

1 +0.15

1.27±0.25

0.4 –0.05

+0.15

0.25–0.05

2.5±0.2

* Use glass epoxy substrate (FR4) 70mm •100mm•1.6mm

(11.43)

4-( 0.8) 10



(VCE = 1V)

F1

20

(IC = 1.2A)

0.5

F2

(2.4)

(4.7)

(3.05)

1

1000

10.5±0.3

Ratings 115±10 115±10 6 ±6 (pulse ±10) 1 2.5 (Ta = 25ºC) 150 –55 to +150

7.5±0.2

Symbol VCBO VCEO VEBO IC IB PT *

2±0.2



11

(13.54)

(Unit: mm)

500

VCE (sat) (V)

150°C

hFE

25°C

100

–55°C

50

10 0.1

0.5

1

0.25

150°C 25°C –55°C

0 0.001

56

0.01

0.1

1

IB (A)

IC (A)

■ IC — VEC Temperature Characteristics (typ.)

■ IC — VBE Temperature Characteristics (typ.) (VCE = 1V)

6

10

5

8

IC (A)

IC (A)

4 6 150°C 25°C –55°C

4

2

2

0

150°C 25°C –55°C

3

1 0 0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

0.2

0.4


0.8

1.0

1.2

1.4

thermal resistance characteristics ■ Transient (82•36•1mm at the time of mounting the 100

20

recommended pattern of the glass epoxy board)

2 circuits operate

10

0.

5m

s

1m

j-a

10

j-a • j-f

(°C/W)

s

IC (A)

0.6

VBE (V)

VEC (V)

1


1 circuits operate 2 circuits operate 1 circuits operate

F1

F2

j-f

1

3

8

0.1

18,19 0.1

1

10

VCE (V)

100

100

200

0.01 0.00001 0.0001 0.001

0.01

0.1

Power time (s)

1

10

100

12,13

Power Transistor Array STA315A

VFEC RB RBE Es/b

* PW 1ms, Duty 25%

L = 10mH, single pulse

External Dimensions STA3 (LF400A) 20.2±0.2

V V V Ω kΩ mJ

b a

0.5±0.15 7 •2.54=17.78±0.25

C1.5±0.5


■ IC — VCE Characteristics (typ.) 30m

A

3

IC (A) 1

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 5

IB2 (mA) 0

ton (µs) 1.0

2 B

3 C

4 B

5 C

6 B

7 C

8 E


■ VCE (sat) — IC Temperature Characteristics

(IC = 0.5A)

0.5

A

1 E

tf (µs) 2.5

tstg (µs) 8.5

■ VCE (sat) — IB Temperature Characteristics

m

12

RL (Ω) 12

(2.54)

1.0±0.25

4.0±0.2

VCE (sat)


9.0±0.2

ICBO IEBO VCEO hFE

Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800±120 2.0±0.4 50min

1.2±0.2

Tj Tstg

Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A

0.5±0.15

PT

Symbol

Unit V V V A mA W W ºC ºC

2.3±0.2

Ratings 35±5 36±5 6 2 (pulse 3*) 30 3 (Ta=25ºC) 13.5 (Tc=25ºC) 150 –55 to +150

11.3±0.2


4.7±0.5



3 IC/IB = 100

8mA 5mA

IC (A)

3mA 2mA

1

IB = 1mA

2

3

4

5

1

6

10

500 Ta = 125ºC 75ºC 25ºC –40ºC

1

VCC = 12V IB = 5mA –IB = 0A

tstg tf ton

1 0.5

4

j-a — t

10 5

1 0

0.5

1.0

1.5

2.0

1

10

100

1000

t (ms)


(per element)

5

Characteristics

Ic (A)


1

Single pulse

5

IC (A)

5

0.5

20

10

0.1 0.5

■

50

ton • tstg • tf (µS)

1000

0.1

0

IC (A)


(VCE = 4V)

3000

50 0.01

0

400

IB (mA)


100

100

(ºC/W)

1

VCE (V)

hFE

1

0 0

Ta = 125ºC 75ºC 25ºC –40ºC

j-a

0

Ta = 125ºC 75ºC 25ºC –40ºC

0.25

2

VCE (sat) (V)

VCE (sat) (V)

2


20

1m

s

10

m

s 5

PT (W)

IC (A)

3

1 0.5

7

W

ith

10

inf

ini

te

he

2

at

sin

RB

4

6

k

RBE 1 Without heatsink natural air cooling

Withou

8

t heat

0.1 1

5

10

VCE (V)

50

0

0

sink

50

100

150

Ta (ºC)

101


ICBO IEBO VCEO hFE VCE (sat) Es/b


Ratings 10max 10max 35±5 500min 0.5max 150min

External Dimensions STA3 (LF400A) 20.2±0.2

V mJ

b

9.0±0.2

Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse

a

0.5±0.15

RL (Ω) 12

IC (A) 1

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 5

7•2.54=17.78±0.25

IB2 (mA) 5

ton (µs) 1.3

tstg (µs) 4.7

tf (µs) 1.2

C1.5±0.5

1

2 C

3 B

4 E

5 E

6 B

7 C

4.0±0.2

VCC (V) 12

(2.54)

1.0±0.25

Typical Switching Characteristics

1.2±0.2

Tj Tstg

Symbol

0.5±0.15

PT


Unit V V V A A W W ºC ºC

2.3±0.2

Ratings 35±5 35±5 6 3 1 2.5 (Ta=25ºC) 12 (Tc=25ºC) 150 –55 to +150

11.3±0.2


4.7±0.5


8



A 10 m A

3

8m


A

6m

A

VCE = 4V

4mA

3

2mA IB =1mA

1

2

Ta = 125ºC 75ºC 25ºC –55ºC

0 0.002

3

0.01

0.05 0.1

VCE (V)

20

0

0.5

500 Ta = 125ºC 75ºC 25ºC –55ºC

1

3

tstg

■

VCE = 12V IB1 = – IB2 = 5mA

10

j-a — t

Characteristics

tf

1

Single pulse

10

5

5

1 0.5

ton

0.3 0.05

0.1

0.5

IC (A)

1

5

0.1 0.1

1

10

Ic (A)


100

1000

t (ms)


(per element)

1.5

20

0.5

0.5

1.0

VBE (V)

(ºC/W)

ton • tstg • tf (µS)

1000

10

0

0.4

■ ton• tstg• t f — IC Characteristics (typ.)

(VCE = 4V)

5000

0.05 0.1

Ta = –55ºC 25ºC 75ºC 125ºC

IB (A)


100 0.01

2

1

j-a

0

0.5

IC (A)

IC (A)

VCE (sat) (V)

3mA

1

hFE

4

5mA

2

0


(IC = 1A)

1


15

1m

s

10

5

W

m

ith

s

(T

c=

25

at

)

10

102

ci

rc

ui

op

er

50

0

3

at

t heat

VCE (V)

(A

ts

Withou

5

nk

ll

0.5

0.2

7

si

5

ºC

2

2

he

PT (W)

IC (A)

1

ite

10

0m

DC

in

fin

10

0

sink (A

ll circui

e)

4

ts oper

50

ate)

100

Ta (ºC)

6

150

5

5000


L = 10mH, single pulse

±0.2

2.3

9.0

±0.2

±0.2

V V V Ω kΩ mJ

b a

±0.25


A

3

IC (A) 1

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 5

IB2 (mA) 0

ton (µs) 1.0

±0.3

0

±0.05

9 • 2.54=22.86

±0.5

C1.5

tstg (µs) 8.5

tf (µs) 2.5


■ VCE (sat) — IC Temperature Characteristics

(IC = 0.5A)

0.5

A

±0.3

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E


m

12

RL (Ω) 12

0.5

0


(2.54)

±0.15

1.0

±0.2±

25%

±0.2

25.25

±0.2

VFEC RB RBE Es/b

External Dimensions STA4 (LF412)

4.0

VCE (sat)


±0.15

* PW 1ms, Duty

ICBO IEBO VCEO hFE

Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800±120 2.0±0.4 50min

1.2

Tj Tstg

Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A

0.5

PT

Symbol

Unit V V V A mA W W ºC ºC

11.3

Ratings 35±5 36±5 6 2 (pulse 3*) 30 4 (Ta = 25ºC) 18 (Tc = 25ºC) 150 –55 to +150

±0.5


3.5



3 IC /IB = 100

8mA 5mA

IC (A)

3mA 2mA

1

IB = 1mA

2

3

4

5

1

6

10

500 Ta = 125ºC 75ºC 25ºC –40ºC

1

VCC = 12V IB = 5mA –IB = 0A

tstg

1

j-a — t

Characteristics Single pulse

tf ton

1 0.5

4

5

1 0

0.5

1.0

1.5

2.0

1

10

100

Ic (A)


1000

t (ms)


(per element)

5

10

5

IC (A)

5

0.5

20

10

0.1 0.5

■

50

ton • tstg• tf (µS)

1000

0.1

0

IC (A)

■ ton•tstg•tf — IC Characteristics (typ.)

(VCE = 4V)

3000

50 0.01

0

400

IB (mA)


100

100

(ºC/W)

1

VCE (V)

hFE

1

0 0

Ta = 125ºC 75ºC 25ºC –40ºC

j-a

0

Ta = 125ºC 75ºC 25ºC –40ºC

0.25

2

VCE (sat) (V)

VCE (sat) (V)

2


20

1m

s

10

m

s 3

7

9

he

10

si

at nk

PT (W)

5

ite

0.5

fin

in

IC (A)

ith W

1

2

RB

4

6

8

RBE 1 Without heatsink natural air cooling

With

out h

0.1 1

5

10

VCE (V)

50

0

0

10

eatsin

50

k

100

150

Ta (ºC)

103

Power Transistor Array STA460C

±0.2

b a

V V mJ

±0.25

(2.54)

±0.15

1.0

0.5

±0.3

±0.3

0

0

±0.05

±0.5

0.5

C1.5

±0.2

9•2.54 = 22.86

±0.2

200

±0.2

25.25

µA µA V

9.0

60 1500 0.09 1.25

50 700

Unit

±0.2

VCB = 50V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

max 10 10 70 3000 0.15 1.5

±0.2


min

2.3

Test Conditions

4.0

°C °C

Symbol


±0.15

Tj Tstg

W


1.2

PT

Unit V V V A A

11.3

Ratings 60±10 60±10 6 ±6 ±10 (Pw 1ms, Du 50%) 3.2 (Ta = 25°C) 18 (Tc = 25°C) 150 –40 to +15

±0.5

Symbol VCBO VCEO VEBO IC ICP

3.5



1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E



■ hFE — IC Characteristics (typ.) typ

75°C 25°C 1000

A

10m

5

5mA

4

500

500

3mA

3 2

100

1mA

1 0

1000 –55°C

h FE

6

2

1

3

4

5

30 0.01

VCE (V)

0.25

50 0.05 0.1

0.5 1

5

30 0.01

10

0.05 0.1

IC (A)


Ta = –55°C 25°C 75°C 125°C

0.5

100

50 0

(IC /IB = 100)

0.75

Ta = 125°C

VCE (sat) (V)

7

IC (A)

mA

20

IB

=3

8

(VCE = 1V)

5000

h FE

0m

A

9

■ hFE — IC Temperature Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.)

(VCE = 1V)

5000

10

0.5 1

0 0.01

10

0.05 0.1

0.5 1

IC (A)


0.75

5

■

j-a — PW

(VCE = 1V)

6

5 10

IC (A)

Characteristics

20 10

5 j-a (°C/W)

4

IC (A)

2

0.25 IC = 3A

1

1.5A

0.5A 0 1

5

10

50 100

0

500

75°C

Ta =

125°

C

3

25°C –55°C

VCE (sat) (V)

5 0.5

0.5

0

IB (mA)

1 0.5

0.1 0.05 0.1

1.5

1.0

0.5 1

VBE (V)

5 10

50 100

500 1000 2000

PW (ms)

Equivalent Circuit Diagram ■ PT — Ta Derating

■ Safe Operating Area 20

20

10

s

10m

1m

5

3

8

s

ith W

15

ms 0.5

Silicone grease used Vertical self-excitation

IC (A)

he k

sin

at

PT (W)

te

ini

inf

10

2

1

7

0.5 5 Without heatsink

Single pulse

4

0.1 Without heatsink 0 –55

Ta=25°C

0

50

Ta (ºC)

104

100

150

0.05 0.5

1

5

10

VCE (V)

50 100

9


External Dimensions STA4 (LF400B) ±0.2

25.25

V V mJ

±0.2

b

9.0

±0.2


±0.2



2.3


a

(2.54)

±0.15

±0.25

0.5

1.0

±0.05

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 30

IB2 (mA) –30

ton (µs) 0.2

t stg (µs) 3.9

±0.5±

C1.5

tf (µs) 0.2

1 2 3 4 B C E

5

6

±0.2

IC (A) 1

±0.2

RL (Ω) 12

4.0

VCC (V) 12

±0.15

9 • 2.54=22.86


1.2

Tj Tstg

Symbol

0.5

PT


11.3

Ratings 65±5 65±5 6 ±6 (pulse ±10) 1 3.2 (Ta = 25ºC) 18 (Tc = 25ºC) 150 –55 to +150

±0.5


4.7



7 8 9 10 B C E



(VCE = 1V)

6

0.75

30mA

IC / IB = 100

20mA

6



5

5 5mA

3

Ta = –55ºC 25ºC 75ºC 125ºC

3mA

0.25

2

0

1

2

3

4

0

0 0.01

5

0.1

1

0

10

■

Ta = 125ºC 75ºC 25ºC –55ºC

1

Characteristics

VCC = 12V IB1 = – IB2 = 30mA

1

Single pulse

5

0.5

1 0.5

tf

0

10

0.1

ton

0.1 0.1

j-a — t

(ºC/W)

ton•tstg•tf (µS)

hFE

500

1

2

3

0.05 0.1

1

Ic (A)

IC (A)


1.5

10

5

tstg

1000

1.0

VBE (V)

■ ton• tstg • t f — IC Characteristics

(VCE = 1V)

2000

50 0.01

0.5

IC (A)


10

100

2000

t (ms)


20


20

0.5m

10

s

ith W

15

PT (W)

0.5

8

nk si at he

1

3

ite fin in

s

10m

s

1m

5

IC (A)

2 1

VCE (V)

100

Ta = 125ºC 75ºC 25ºC –55ºC

3

IB = 1mA

1 0

4

0.5

j-a

IC (A)

4

IC (A)

VCE (sat) (V)

10mA

10

2

7

5 Withou

t heat


0.1 1

5

10

VCE (V)

50

100

0

0

sink

50

4 100

9

150

Ta (ºC)

105


External Dimensions STA4 (LF400B) ±0.2

25.25

V V mJ

±0.2

b

9.0

±0.2


±0.2



2.3


a

(2.54)

±0.15

±0.25

0.5

1.0

±0.05

VBB1 (V) 10

VBB2 (V) –5

IB1 (mA) 30

IB2 (mA) –30

t on (µs) 0.2

t stg (µs) 5.7

±0.5

C1.5

tf (µs) 0.4

1 2 3 4 B C E

5

6

±0.2

IC (A) 1

±0.2

RL (Ω) 12

4.0

VCC (V) 12

±0.15

9 •2.54=22.86


1.2

Tj Tstg

Symbol

0.5

PT



11.3

Ratings 115±10 115±10 6 ±6 (pulse ±10) 1 3.2 (Ta=250ºC) 18 (Tc=25ºC) 150 –55 to +150

±0.5


4.7


7 8 9 10 B C E




20mA

6

10mA 5mA

4 3

3mA

Ta = –55ºC 25ºC 75ºC 150ºC

0.25

4 3 2

2

1

IB = 1mA

1 0

1

2

3

4

5

0

0 0.01

6

0.1

(VCE = 4V)

2000

5

tstg

1 0.5

1.0

ton 0

10

1

2

Characteristics


3

Single transistor operated

10 5 1

0.1 0.0001 0.001

0.01

0.1

1

10

t (s)

■ PT — Ta Derating (Tc = 25ºC)

20

0.75

Dual transistor operated

Single pulse

Ic (A)

IC (A)

1.5

0.5

VCC = 12V IB1 = – IB2 = 30mA

tf 0.1

1

j-a — t

100 50

(ºC/W)

Ta = 150ºC 75ºC 25ºC –55ºC

■

j-a


500

hFE

0.5

VBE (V)

10

1000

0.1

0

5



50 30 0.01

1

IC (A)

VCE (V)

100

Ta = 150ºC 75ºC 25ºC –55ºC

5 0.5

IC (A)

30mA

6

VCE (sat) (V)

7

0

(VCE = 1V)

7 I C /IB = 100

5

IC (A)


0.75

8


15

PT (W)

nk si at he

0.25

8

ite fin in

0.5 Ta = 150ºC 75ºC 25ºC –55ºC

3

ith W

VCE (sat) (V)

IC = 1.2A

10

2

7

5 Withou

t heat

0

1

10

100

IB (mA)

106

1000

0

0

4

sink

50

100

Ta (ºC)

150

9

100

1000


±0.2

a

V V mJ

(2.54)

±0.15

±0.25

0.5

1.0

±0.05

±0.5

0.5

C1.5

±0.2

9 •2.54= (22.86) (Root dimension)

±0.2

80

±0.2

b

9.0

60 400

25.25

µA µA V

±0.2

65 800 0.09 1.25

10 10 70 1500 0.15 1.5

Unit

±0.2

VCB=60V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.5A, IB=15mA IFEC=6A L=10mH

max

2.3


min

4.0

ºC ºC

Test Conditions

External Dimensions STA4

±0.15

Tj Tstg

W

Symbol


1.2

PC


Unit V V V A A

11.3

Ratings 65±5 65±5 6 6 (pulse 10) 1 20 (Tc=25ºC) 4 (Ta=25ºC) 150 –55 to +150

±0.5


3.5


1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E




30mA

(VCE = 1V)

6 I C /IB = 100

20mA

6


0.75

5

IC (A)

4

5mA

3

Ta= –55ºC 25ºC 75ºC 125ºC

3mA

0.25

2

0

1

2

3

4

3

1 0

0 0.01

5

0.1

1

VCE (V)

0

10

0.5

1.0


(VCE = 1V)

2000

1.5

VBE (V)

IC (A)


5

tstg


1000

hFE

500 Ta = 125ºC 75ºC 25ºC –55ºC

100

VCC = 12V IB1 = – IB2 = 30mA

1 0.5

tf ton

0.1

50 0.01

0.1

1

0

10

1

2

3

Ic (A)

IC (A)



20


20

0.5m

10

s

ith

W

15

fin in

s 1m s 10m

5

3

5

2 4

5

Witho

ut he


0.1 1

5

10

VCE (V)

50

100

9

k sin

10

1

0.5

7

at

1

he

PT (W)

ite

IC (A)

Ta = 125ºC 75ºC 25ºC –55ºC

2

IB = 1mA

1 0

4

0.5

IC (A)

VCE (sat) (V)

10mA

5

0

0

6

8 10

atsin

k

50

100

150

Ta (ºC)

107

MOS FET 2SK3710 (under development)

Features

Applications

● ON resistance 0.0060Ω max. ● Built-in G-S bidirectional Zener diode ● Trench MOS structure

● Power steering motor ● Various motors ● Replaces mechanical relays

External Dimensions

108

130 400 150 –55 to +150

Unit V V A A W mJ ºC ºC

Symbol

Test Conditions

V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss

ID = 100µA VGS = ±20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/µs VDS = 10V VGS = 10V f = 1.0MHz

min

Ratings typ

max

60

2 5.0 0.9 110 9400 1400 1100

±10 100 4 6.0 1.5

Unit V µA µA V mΩ V ns pF pF pF

(1.4) +0.3

9.1±0.3

+0.2

0.1 –0.1

+0.2 0.86 –0.1

3 –0.5

+0.3

1.2±0.2

2.54±0.1

2.54±0.1

10.2 ±0.3

±0.1

0.4

(5.4)

1.4±0.2

Ratings 60 20 70 140

(Ta=25ºC)

(1.3)

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg


1.3±0.2

2.6±0.2

(1.5)


4.44±0.2

10.5 –0.5

(0.45)

(5)

TO220S

1

2

3

Details of the back (S=2/1)

(Unit: mm)

MOS FET 2SK3711

External Dimensions



130 To be defined 150 –55 to +150

* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω * Contact your sales rep for the details of warranty at Tch = 175°C

■ ID — VDS Characteristics (typ.)

Test Conditions


ID = 100µA VGS = +20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/µs

70

60

60 10V 8V 6V

40

VGS = 5V

30

10 0.5

0

0

1

2

0

(3)

(Unit: mm)

■ Re (yfs) — ID Characteristics (typ.)

0.6 0.4

0

8

(VDS = 10V) Tc = –55°C 25°C 150°C

ID = 70A

10

35A 1 0

10

5

15

20

1

10

VGS (V)

■

70

ID (A)

j-c — Pw

VGS = 10V

12.0

6.0

Characteristics

10

4.0 3.0 2.0

j-c (ºC/W)

RDS (ON) (mΩ)

10.0

5.0

8.0 6.0 4.0

1

0.1

2.0 0

10

20

30

40

50

60

0 –60 –50

70

0

ID (A)

50

100

0.01

Tc (ºC)

(Ta = 25ºC)

60

Ciss

50

100

40

10

100

t)

(O

t)

ms

80 60

20

t)

ho

(1s

Tc = 150°C 25°C –55°C

ho

10

IC (A)

N)

S

RD

(With infinite heatsink)

120

0µ s( 1s

ED

IT

M LI

ho

Coss

100

30

10

140

50

1s

1000

ID (pulse) max

s(

IDR (A)

10000

(Ta = 25ºC)

500

1m

VGS = 0V f = 1MHz

1

■ Safe Operating Area (single pulse) ■ PD — TC Characteristics

(Ta = 25ºC)

70

0.1

Pw (sec)

■ Capacitance — VDS Characteristics ■ IDR — VSD Characteristics 50000

0.01 0.0001 0.001

150

PD (W)

1.0

Capacitance (pF)

(2)


1. Gate 2. Drain 3. Source

500

■ RDS (ON) — TC Characteristics (typ.) ID = 35A

VGS = 10V

7.0

RDS (ON) (mΩ)

6

1.4

5.45±0.1

(1)

0.2

4

0.65 –0.1

15.8±0.2

1.0

VGS (V)

■ RDS (ON) — I D Characteristics (typ.) Ta = 25ºC

5.45±0.1

■ VDS — VGS Characteristics (typ.)

Tc = 150°C 100°C 50°C 25°C 0°C –40°C

+0.2

+0.2

1.05 –0.1

100

VDS (V)

0

5.0 0.9 70 7800 1250 990

2 3

0.8

30

10

V µA µA V mΩ V ns pF pF pF

±10 100 4 6.0 1.2

2

(VDS = 10V)

40

20

Unit

max

60

50

20

0

min

Ratings typ

VDS = 10V VGS = 10V f = 1.0MHz

80

ID (A)

ID (A)

Symbol

70

50

(Ta=25ºC)

■ ID — VGS Characteristics (typ.)

(Ta = 25ºC)

80

2.0±0.1

3.2±0.1

a

Re (yfs) (S)

Ratings 60 20 70 140

VDS (V)

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg

4.8±0.2

b

20.0 min 4.0 max


15.6±0.4 13.6 9.6

TO-3P

1.8 5.0±0.2


2.0

Applications


19.9±0.3 4.0

Features

1

40

Crss 10 100

20

0 0

10

20

30

VDS (V)

40

50

0

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1 0.1

0 1

10

VDS (V)

100

0

50

100

150

Tc (ºC)

109


External Dimensions

60 To be defined 150 –55 to +150


* Contact your sales rep for the details of warranty at Tch = 175°C

110

Symbol

Test Conditions


ID = 100µA VGS = ±20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 40A ISD = 50A ISD = 25A, di/dt = 50A/µs VDS = 10V VGS = 10V f = 1.0MHz

min

Ratings typ

max

60

1 4.0 0.9 To be defined 10600 1600 1300

±10 100 2 5.0 1.5

Unit

V µA µA V mΩ V ns pF pF pF

9.1±0.3

+0.2

0.1 –0.1

+0.2 0.86 –0.1

2.54±0.1

2.54±0.1

10.2±0.3

3 –0.5

+0.3

1.2±0.2

±0.1

0.4

(5.4)

1.4±0.2

Ratings 60 20 80 160

(Ta=25ºC)

1.3±0.2

2.6±0.2

(1.3)

Symbol VDSS VGSS ID ID (pulse) PD EAS Tch * Tstg


(1.5)


4.44±0.2

(1.4)

(5)

TO220S

+0.3


10.5 –0.5

Applications


(0.45)

Features

1

2

3


(Unit: mm)

MOS FET 2SK3800


VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22Ω RL = 0.57Ω, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs

70

60

60

50

50

1.2

2.54±0.1

1

2

3

30

20

20

10

10

(VDS = 10V)

500

0.5

0

1.0

1.5

0

2.0

0

1.0

2.0

VDS (V)

Ta = 25ºC VGS = 10V

ID = 70A 0.2

4.0

5.0

6.0

Tc = –55°C 25°C 150°C

35A 1 0

10

5

15

20

1

■

j-c

— t Characteristics (Single pulse)

(ID = 35A)

30

2.0

15

VDS

8.0 6.0 4.0

20

1

10

VDS (V)

3.0

70

■ Dynamic I/O Characteristics (typ.)

10

j-c (ºC/W)

4.0

10

ID (A)

10.0

5.0

VGS VDD = 8V 12V 14V 16V 24V

10

0.1

5

2.0

0

10

20

30

40

50

60

0 –60 –50

70

0

ID (A)

50

100

150

(Ta = 25ºC)

50000

0.01 0.00001 0.0001 0.001 0.01

Tc (ºC)

PT

N)

IC (A)

IDR (A)

IT

M

50 40 Ta = 150°C 25°C –55°C

Coss 20

S

10

PT

ED

Ciss

1000

100

LI

PT

(O

RD

PT =1

=1

30

VDS (V)

40

50

0 150

70

00 µs

=1

60

m

0m

s

s

50 40 30

1

20 10

0 20

100

80

0µ s

10 10

50

90

=1

Crss

0

0

(Ta = 25ºC)

100

30

10

Qg (nC)

500

60

10000

1


70

VGS = 0V f = 1MHz

0 0.1

t (s)

■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.)

100

10

VGS (V)

ID = 35A VGS = 10V

12.0

1.0

Capacitance (pF)

0

7.0

■ RDS (ON) — TC Characteristics (typ.)

RDS (ON) (mΩ)

RDS (ON) (mΩ)

6.0

0

0.4

VGS (V)

■ RDS (ON) — I D Characteristics (typ.) 7.0

3.0

0.6

PD (W)

0

Ta = 150°C 25°C –55°C



(Ta = 25ºC)

Re (yfs) (S)

VGS = 4.5V

(5.4)

(Unit: mm)

100

40

±0.1

0.4

2.54±0.1

10.2±0.3

1.0

VDS (V)

30

ID (A)

ID (A)

10V 5.5V 5.0V

+0.2

0.1 –0.1 +0.3

+0.2 0.86 –0.1

0.8

40

2.6±0.2

1.2±0.2


(VDS = 10V)

1.3±0.2

3 –0.5

6.0

1.56 62.5


70

±10 100 4.0

3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 110

2.0 30

(5)

V µA µA V S mΩ pF pF pF ns ns ns ns V ns ºC/W ºC/W

4.44±0.2

(1.4)

40

+0.3

ID = 100µA, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A

Unit

max

VGS (V)

RG = 50Ω

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)

min

1.4±0.2

* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,

Test Conditions

(1.3)

80 (Tc=25ºC) 400 150 –40 to +150

Symbol



9.1±0.3



10.5 –0.5

Ratings 40 ±20 ±70 ±140

(1.5)

Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg

(0.45)


0

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1 0.1

0 1

10

VDS (V)

100

0

20

40

60

80 100 120 140 160

Tc (ºC)

111

MOS FET 2SK3801

100 (Tc=25ºC) 400 150 –40 to +150

* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω


Symbol

Test Conditions

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)


min

VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22Ω RL = 0.57Ω, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs

70

60

60

V µA µA V S mΩ pF pF pF ns ns ns ns V ns °C/W °C/W

±10 100 4.0

3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100

2.0 30

6.0

1.5 1.25 35.71

2

30

20

20

10

10

0

0.5

0

1.0

1.5

0

2.0

Ta = 150°C 25°C –55°C

0

1.0

2.0

(1)

(2)

VDS (V)

0.4

(3)

4.0

5.0

6.0

0

7.0


(VDS = 10V)

1000

ID = 35A VGS = 10V

10.0

Tc = –55°C 25°C 150°C

100

10

1 5

0

10

15

1

20

10

VGS (V)

■ RDS (ON) — TC Characteristics (typ.)

■

(Unit: mm)

35A

VGS (V)

■ RDS (ON) — I D Characteristics (typ.) 7.0

0.6

0.2




(Ta = 25ºC)

ID = 70A

3.0

1.4

5.45±0.1

Re (yfs) (S)

VGS = 4.5V

40

0.65 –0.1

15.8±0.2

1.0

VDS (V)

30

ID (A)

ID (A)

40

+0.2

+0.2

1.05 –0.1

50

10V 5.5V 5.0V

2.0±0.1

3

0.8 50

4.8±0.2

3.2±0.1

a b

5.45±0.1


(VDS = 10V)

15.6±0.4 13.6 9.6

Unit

max

40


70

External Dimensions TO-3P


1.8 5.0±0.2



2.0

Ratings 40 ±20 ±70 ±140

19.9±0.3 4.0


20.0 min 4.0 max


j-c

70

ID (A)

— Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.) (ID = 35A)

30

10

6.0

15

VDS

2.0

4.0

20

1

10 VGS VDD = 8V 12V 14V 16V 24V

10

0.1

VGS (V)

3.0

6.0

VDS (V)

4.0

j-c (ºC/W)

RDS (ON) (mΩ)

RDS (ON) (mΩ)

8.0 5.0

5

2.0 1.0 0

10

20

30

40

50

60

0 –60 –50

70

0

ID (A)

50

100

150

Tc (ºC)

(Ta = 25ºC)

10

100

ED

N)

Ciss

IDR (A)

PT

IT

50 40 Ta = 150°C 25°C –55°C

30

Coss 20

S

10

M LI

PT

(O

RD

PT =1

0µ

20

30

VDS (V)

112

40

50

0 150

=1

100

00

=1 m 0m s s

µs

80 60 40

1 20

0 10

100

120

s

10 0

50

=1

Crss

100

0

(Ta = 25ºC) PT

60

10000

100

Qg (nC)

500

IC (A)

Capacitance (pF)

1


70

VGS = 0V f = 1MHz

1000

0 0.1

Pw (s)

■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.) 50000

0.01 0.00001 0.0001 0.001 0.01

PD (W)

0

0

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

1.4

0.1 0.1

0 1

10

VDS (V)

100

0

20

40

60

80 100 120 140 160

Tc (ºC)


* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50Ω

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr

ID = 100µA, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22Ω VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs

min

max

40 ±10 100 4.0

2.0 50 2.1 10500 2400 1900 90 230 490 760 0.85 90

3.0

1.2

Unit

V µA µA V S mΩ pF pF pF ns ns ns ns V ns

4.44±0.2

10.2±0.3

1.3±0.2

a

1.6

b (1.5)

Test Conditions


(1.4)

Symbol


+0.3


10.0 –0.5

100 (Tc=25ºC) 730 150 –55 to +150


8.6±0.3

Ratings 40 ±20 ±85 ±170

+0.2

0.1–0.1

1.27±0.2

+0.3


3.0 –0.5


+0.2

0.86 –0.1

0.4±0.1

1.2±0.2 2.54±0.5

2.54±0.5


113

MOS FET 2SK3851

150 280 150 –55 to +150

* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped

■ ID — VDS Characteristics

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr


min 60

2.0 30

4.0 11500 1500 1100 60 25 370 65 0.87 70

VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD 16V RG = 22Ω VGS = 10V ISD = 50A, VGS = 0V ISD = 50A, di/dt = 100A/µS

4.7

1.5

4.8±0.2 2.0±0.1

3.2±0.1

a b

2 3

+0.2

+0.2

0.65 –0.1

1.05 –0.1

5.45±0.1

1.4

5.45±0.1 15.8±0.2

(1)

■ VDS — VGS Characteristics (VDS = 10V)

100

V µA µA V S mΩ pF pF pF ns ns ns ns V ns

±10 100 3.0

2.5

15.6±0.4 13.6 9.6

Unit

max

(3)


■ Re (yfs) — ID Characteristics

(Ta = 25ºC)

1.0

(2)


(VDS = 10V)

500

10V

80

0.8

80

70

100

40 VGS = 4.0V

30 20

60 Ta = 150°C 25°C –55°C

40

Re (yfs) (S)

ID (A)

50

VDS (V)

4.5V

60

ID (A)

Test Conditions

■ ID — VGS Characteristics

(Ta = 25ºC)

90

Symbol

External Dimensions TO-3P


2.0


19.9±0.3 4.0

Ratings 60 ±20 ±85 ±280

20.0 min 4.0 max


1.8 5.0±0.2



0.6

0.4

ID = 85A

0.2

20

–55°C 25°C 150°C

10

ID = 42A

10 0 0

0.4

0.8

1.2

1.6

2.0

0 1

0

2

VDS (V)

4

5

6.0

2

4

8

6

1

10 12 14 16 18

1

5

VGS (V)

■ RDS (ON) — TC Characteristics


8.0

■

VGS = 10V ID = 25A

j-c — t

RDS (ON) (mΩ)

4.0


10

3.0 2.0 1.0

6.0 5.0 4.0 3.0

1

0.1

2.0 1.0

0 0

10

20

30

40

50

60

70

80

0 –100

90

–50

0

ID (A)

50

120 Ta = 150°C 25°C –55°C

IDR (A)

50

PD (W)

Capacitance (pF)

140

60

40

Crss 30

VDS (V)

40

50

60

60

0

0 20

80

20

10

500

100

40

20 Coss 10

160

70

30

0

0.01

0.001

■ PD — TC Characteristics

80

Ciss

1000

0.01 0.0001

t (s)

(Ta = 25ºC)

90

Ta = 25°C VGS = 0V f = 1MHz

10000

150

Tc (ºC)


100

0

0.2 0.4

0.6

0.8

VSD (V)

1.0

1.2 1.4

0

25

50

75

100

Tc (ºC)

10

ID (A)

7.0

5.0

114

0

6

VGS (V)

■ RDS (ON) — I D Characteristics

RDS (ON) (mΩ)

3

j-c (ºC/W)

0

125

150

0.1

1

10

50

100

MOS FET FKV460S



IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD

ID = 25A VDD = 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V

(1.4)

µA V S mΩ pF pF pF ns ns ns ns V

9

1.5

1.3±0.2

a

1.6

b

+0.2

0.1–0.1

1.27±0.2 +0.2

0.4±0.1

0.86 –0.1 1.2±0.2 2.54±0.5

2.54±0.5



(VDS = 10V)


(Ta = 25ºC)

1.0

(VDS = 10V)

500

0.8

Ta = 150ºC 25ºC –55ºC

30 20

0.6 ID = 60A

0.4 0.2

10

10

0

0

3

4

5

0

1

2

3

4

5

0

10

VGS (V)

14



14

■

VGS = 10V ID = 25A

10 8.0 6.0 4.0

1

5

j-a — t

j-c •

10

60

ID (A)


50

12

RDS (ON) (mΩ)

12

5

20

VGS (V)

10 8.0 6.0 4.0

(ºC/W)


15

50

10

10A 0

10

j-a

2

1

–55ºC 25ºC 150ºC

100

25A

1

j-c •

0

Re (yfs) (S)

VGS = 3.0V

VDS (V)

40

ID (A)

30

VDS (V)

0.1

j-a FR4 (70 • 100 • 1.6mm)

Use substrate j-c

2.0

2.0 10

20

30

40

50

0 –60 –50

60

0

50

100

(Ta = 25ºC) VGS = 0V f = 1MHz

0.01

Crss

(Ta = 25ºC)

200 ID (pulse) max 100

50

ED

IT

PT

IM

5V

IC (A)

40 30 VGS = 10V 20

10

R

PT

L N) (O DS

=1

m

60

s

50

0m

s

1

10

20

VDS (V)

30 35

40 30 20 10

0 0

10

70

=1

10 100

1


10V

IDR (A)

Coss

0.1

t (s)

(Ta = 25ºC)

60

Ciss

1000

0.001

Tc (ºC)


0.01 0.0001

150

PD (W)

0

ID (A)

Capacitance (pF)

µA

50

20

RDS (ON) (mΩ)

7 2800 1400 600 20 600 250 100 1.0

4.44±0.2

10.2±0.3

V +10 –5 100 2.3

1.3 20.0


10V 5.0V 4.0V

40

0

40

VDS = 10V f = 1.0MHz VGS = 0V

70

Unit

max

60

50

ID (A)

ID = 100µA, VGS = 0V VGS = +20V VGS = –10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A

IGSS

(Ta = 25ºC) 3.5V

60

V(BR) DSS

Ratings typ

min

(1.5)

* PW

Test Conditions

+0.3

60 (Tc=25ºC) 150 –55 to +150 100µs, duty 1%

Symbol

10.0 –0.5

Unit V V A A W ºC ºC

8.6±0.3

Ratings 40 +20, –10 ±60 ±180

+0.3

Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg


(Ta=25ºC)

3.0 –0.5


0

0.2

0.4

0.6

0.8

VSD (V)

1.0

1.2

0.1 0.1

0 1

VDS (V)

10

50

0

25

50

75

100 125 150

Tc (ºC)

115

MOS FET FKV660S


160

ID=25A VDD=12V RL=0.48Ω VGS=10V ISD=50A, VGS=0V

20 4

6

8

10

12

0

2

1

3

VDS (V)

4

(1.4) +0.3

(Unit : mm)


ID = 60A 0.6 0.4 0.2

5

0

6

0.010

VGS = 10V

1

10

100

15

ID (A)

(Ta = 25ºC)

10000

VGS = 4V

0.015 VGS = 10V

0.010

0 –60 –50

0

50

100

Tc (ºC)

Ciss 1000

Coss

150

Crss 100 0

10

20

30

VDS (V)

180

Ta = 25ºC VGS = 0V

■ Safe Operating Area (single pulse) (Ta = 25ºC)

500 ID (pulse) max

160 100

140

ED

IT

IM

ID (A)

IDR (A)

120 100 80

10

R

DS

L N) (O

PT

PT

=1 m s 0m s

=1

60 1

40 20 0 0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD (V)

116

0.1 0.1

10

VGS = 0V f = 1MHz

ID (A)

■ IDR — VSD Characteristics

1

20

■ Capacitance — VDS Characteristics (ID = 25A)

0.020

200

10

VGS (V)

0.005

0.005

100

1 10

Capacitance (pF)

RDS (ON) (Ω)

VGS = 4V

0.015

–55°C 25°C 150°C

10A 5

0

0.025

0.020

(VDS = 10V)

1000

25A

0.030

0.025

1

10

VDS (V)

0.4±0.1


0.8

■ RDS (ON) — TC Characteristics (Ta = 25ºC)

0.030

+0.2 0.1– 0.1

1.2±0.2 2.54±0.5

2.54±0.5

(Ta = 25ºC)

VGS (V)


0

VDS (V)

ID (A)

Ta = 150°C 100°C 50°C 25°C 0°C –55°C

0.01

2

1.6

b

1.27±0.2 +0.2 0.86 – 0.1

1.0

40

0

1.5

a

1.4

1

0.001

14

1.3±0.2

1.2

0.1

VGS = 3.5V

µA V S mΩ pF pF pF ns ns ns ns V

■ VDS — VGS Characteristics (VDS = 10V)

10

80

µA

(1.5)

11 2500 900 150 50 400 400 300 1.0

100

4V

60

RDS (ON) (Ω)

1.0 20

4.44±0.2

10.2±0.3

V +10 –5 100 2.5

VDS=10V f=1.0MHz VGS=0V

1000

Unit

max

60

4.5V

100

0

min


120

ID (A)

ID=100µA, VGS=0V VGS =+20V VGS =–10V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=25A VGS=10V, ID=25A

IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD

10V 6V

140

V(BR)DSS IGSS

(Ta = 25ºC)

180

Test Conditions

Re (yfs) (S)


Symbol


( Ta=25ºC) Ratings typ

10.0 –0.5 8.6±0.3

Unit V V A A W ºC ºC

+0.3

Symbol Ratings VDSS 60 +20, –10 VGSS ±60 ID ±180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1%

3.0 –0.5


100

40

50

100 200

Surface-mount MOS FET Array SDK06

RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD


52

1.0 1.0

57 ±1.0 100 2.5

1.8 0.2 0.25 200 120 20

VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ

0.25 0.3

2.0 7.4 3.3 4.2 1.0

ISD = 1A, VGS = 0V

V µA µA V S Ω Ω pF pF pF µs µs µs µs V

1.5

16

0.3

9

a b

+0.15 –0.05

Pin 1

19.56


0.8 VGS = 4V

VDS = 10V

10

5

Ta = 150ºC

VGS = 5V VGS = 10V

0.6

3 2

RDS (ON) (Ω)

ID (A)

1

0.1

VGS = 3V

1

0

2

4

6

8

10

12

0.01

14

1

2

0.2

4

5

6

1

2

3

4

5

6

ID (A)

■ Re (yfs) — I D Characteristics

0.5

■ I DR — VSD Characteristics 10

10 ID = 1A

VDS = 10V

5

Re (yfs) (S)

VGS = 4V typ.

0.4

0.3 VGS = 10V typ.

0.2

8

1

Ta = –55ºC 25ºC 150ºC

0.5

0.1

0.2 0.05 0.1

0 50

100

150

0.5

Ta = 150ºC 75ºC 25ºC –55ºC

6

4

2

1

0

6

0

0.2

0.4

ID (A)

Tc (ºC)

(Tc = 25ºC)

10 ED

1.2

1.4


s

(o

m 10

R

LI

1.0

0µ s

1m

IT

M

n)

S D

0.8

10

ID (pulse) max

5

0.6

VSD (V)


15 16

s

ID (A)

0

0

VGS (V)

■ R DS (ON) — TC Characteristics

RDS (ON) (Ω)

3

25ºC

0.4

0 0

VDS (V)

–50

75ºC

–55ºC

Ta = –55ºC 25ºC 75ºC 150ºC

IDR (A)

ID (A)

4

0

8

20.0max ±0.2

20

VGS = 4V

+0.15

0.75 –0.05

■ R DS (ON) — I D Characteristics


6

2.54±0.25

0.89±0.15

0.25

6.8max

47

3.6±0.2

ID = 1mA, VGS = 0V VGS = ±20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A

Unit

max

1.4±0.2

V(BR) DSS IGSS IDSS VTH Re (yfs)

min

1.0±0.3

Test Conditions


6.3±0.2 8.0±0.5

40 150 –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω

Symbol


4.0max

3 (Tc=25ºC, 4 circuits operate)



9.8±0.3

Ratings 52±5 ±20 ±3 ±6

3.0±0.2

Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg

0 to 0.15


13 14

11 12

9

10

1 1

3

5

7

0.5 2

0.1 0.5

1

5

10

4

6

8

50

VDS (V)

117


ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω

50 80 60 40 1.0

ISD = 6A, VGS = 0V

8

0.1

Ta = 150°C 75°C 25°C 0°C –55°C

VGS = 3V 0.01

4 2 0

0

3

9

6

12

15

0.001

0

2

1

VDS (V)

4

0

5

0.10

0

2

4

25°C 0°C

0

0

6

8

6.8max

0.1 0.05 0.1

10

1

10

ID (A)

(single pulse) (Ta = 25ºC)

(ID = 4A)

0.20

Ta = 150°C

0.10

0.05

1

500 VDD = 12V constant RGS = 50Ω VGS = 5V

75°C

0.05

10

■ RDS (ON) — TC Characteristics (typ.) ■ S/W Time W — ID Characteristics

(VGS = 4V)

0.15

Ta = 150°C 25°C –55°C

VGS (V)

0.20

RDS (ON) (Ω)

RDS (ON) (Ω)

Ta = 150°C 75°C 25°C 0°C –55°C

(VDS = 10V)

100

0.2


(VGS = 10V)

0.20


0.6

VGS (V)


0.15

3

8

20.0max

(Unit: mm)

Ta = 150°C 75°C 25°C 0°C –55°C

0.8

Pin 1


0.4

RDS (ON) (Ω)

6

VDS (V)

ID (A)

ID (A)

VGS = 10V

b

19.56

(ID = 4A)

1.0

1

9

a

±0.2

1.4 1.2

10

+0.15 0.3 –0.05

■ VDS — VGS Characteristics (typ.) (VDS = 10V)

14 12

16

Re (yfs) (S)


1.5

2.54±0.25

+0.15

0.75 –0.05

3.6±0.2

1.8 9.0 0.07 0.09 700 300 90

0.89±0.15

0.25

1.4±0.2

1.3 5.0

V nA µA V S Ω Ω pF pF pF ns ns ns ns V

±100 100 2.3 13.0 0.08 0.1

6.3±0.2 8.0±0.5

50


20 10

Unit

max

4.0max

min

1.0±0.3

ID = 100µA, VGS = 0V VGS = ±20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A

Ciss Coss Crss t d (on) tr t d (off) tf VSD

VGS = 4V

16

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON)

(Ta = 25ºC)

18

Test Conditions

0.15 VGS = 4V

0.10

VGS = 10V

0.05

–55°C

S/W Time (ns)


Symbol



0 to 0.15

Ratings 50 ±20 ±4.5 ±9

9.8±0.3

(Ta=25ºC) Unit V V A A W 4 (Tc=25ºC, 4 circuits operate) 80 mJ ºC 150 ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg

3.0±0.2



100

tr t d (off) t d (on) tf

10

0

2

4

6

8

10

12

0

2

4

ID (A)

6

8

10

0 –60 –50

12

0

ID (A)

50

100

5 0.1

150

0.5

Tc (ºC)

1

5

10

ID (A)

Equivalent Circuit Diagram ■ Capacitance — VDS Characteristics ■ ISD — VSD Characteristics (typ.) (Ta = 25ºC)

5000

8

1000

6

Coss

100

Crss

4 circuits operate 3 circuits operate 2 circuits operate 1 circuits operate

3

5

P T (W)

Ciss

Ta = 150°C 75°C 25°C 0°C –55°C

4 3 2

15

2

1

0

0 1

10

VDS (V)

100

0

0.3

0.6

0.9

VSD (V)

1.2

1.5

0

50

100

Ta (ºC)

150

16

13

3

2

1

1

10

118

4

7

ISD (A)

Capacitance (pF)

VGS = 0V f = 1MHz

5 0.1

■ PT — Ta Characteristics

14

11

5

4

12

9

7

6

8

10



1.0 5.0 0.15 0.2 400 130 30

VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3Ω VGS=5V RG=50Ω

0.2 0.25

100 300 250 200 1.0

ISD=6A, VGS=0V

Pin 1

19.56


■ R DS (ON) — I D Characteristics 0.30 0.25

VGS=4.5V

RDS (ON) (Ω)

VGS=4V

ID (A)

6 Ta=–55ºC 25ºC 75ºC 150ºC

4

4 2

0

1

2

3

4

5

0

6

0.15 VGS=10V

0.10

0

1.0

2.0

3.0

0

4.0

0

2

4

VGS (V)

8

10

1.0

1.2

■ I DR — VSD Characteristics

50

0.45

6

ID (A)


■ R DS (ON) — TC Characteristics ID=4A

0.20

0.05

VDS (V)

0.40

8

20.0max

VDS=10V

8

0

b

±0.2

8

12

9

a

+0.15 0.3 –0.05

10 VGS=10V

ID (A)

16

pF pF pF ns ns ns ns V


16

+0.15

0.75 –0.05

Ω

1.5

2.54±0.25

0.89±0.15

0.25

6.8max

V µA µA V S

±5 100 2.0

3.6±0.2


120

1.4±0.2

ID=100µA, VGS=0V VGS=±20V VDS=120V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A

Unit

max

6.3±0.2 8.0±0.5


min

4.0max

Test Conditions


1.0±0.3

Symbol

RDS (ON)

*1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω


9.8±0.3


3.0±0.2

Symbol Ratings 120 VDSS ±20 VGSS ±6 ID ±10 ID (pulse) *1 3 (Tc=25ºC, 4 circuits operate) PT EAS *2 80 Tch 150 Tstg –55 to +150

0 to 0.15



6 VGS=0V

VGS=4V

5

VGS=10V

0.20

Ta=–55ºC 25ºC 75ºC 150ºC

1 0.5

0.10

0.1 0.05 0.1

0 –50

0

50

100

150

0.5

1

5

3 2 1 0

10

0

0.2

0.4

ID (A)

Tc (ºC)

(Ta = 25ºC)

20

1000 500

ID (pulse) max

10

Ciss

5

ID (A)

Coss


0µ s

1m

s

10

15

m

RDS (on) LIMITED

100

16

13

14

11

12

9

10

s

10

0m

s

1

1

50

0.8

10

ID (DC) max

VGS =0V f=1MHz

0.6

VSD (V)


■ Capacitance — VDS Characteristics

Capacitance (pF)

Ta=150ºC 75ºC 25ºC –55ºC

4

5

IDR (A)

Re (yfs) (S)

RDS (ON) (Ω)

10 0.30

3

5

7

0.5 2

4

6

8

Crss

0.1

10 0

10

20

30

VDS (V)

40

50

1

5

10

50

100 200

VDS (V)

119

MOS FET Array SLA5027

j-c

VISO Tch Tstg

(Fin to lead terminal) AC1000

mJ ºC/W Vrms ºC ºC




150 –55 to +150 *1 PW 250µs, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω

min

Unit

max

60

1.0 6.0

1.5 12.0 0.07 1100 500 170

VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75Ω VGS = 5V RG = 50Ω

0.08

50 250 250 180 1.0

ISD = 10A, VGS = 0V

V µA µA V S Ω pF pF pF ns ns ns ns V

±100 100 2.0

1.5

Ellipse 3.2±0.15 • 3.8

31.0±0.2 3.2±0.15

24.4±0.2

4.8±0.2 1.7±0.1

±0.2

16.4


250 2.08

Test Conditions

8.5max

EAS*2

Symbol

External Dimensions SLA 12pin (LF800)

16.0±0.2

60 (Tc=25ºC,4 circuits operate)


13.0±0.2

5 (Ta=25ºC, 4 circuits operate)

PT

Unit V V A A W W

9.9±0.2

Ratings 60 ±20 ±12 ±48

a b

2.7

Symbol VDSS VGSS ID ID (pulse)*1

9.5min (10.4)



12

Pin 1 +0.2 –0.1

0.85

1.2±0.15

0.55

1.45±0.15

2.2±0.7

+0.2 –0.1

11•P2.54±0.7 =27.94±1.0 31.5 max

1 2 3 4 5 6 7 8 9 10 11 12




10

■ R DS (ON) — I D Characteristics 0.1

12 VDS = 10V

10

VGS = 4V

4V 5V 10V

8

RDS (on) (Ω)

8

ID (A)

ID (A)

6 VGS = 3V

4

6

Ta = 150ºC 75ºC 25ºC –55ºC

4 2

0

0.05

VGS = 10V

2

0

1

2

3

4

5

0

6

0

1

VDS (V)

2

3

0 0.1

4

1

VGS (V)



20


30

0.12

10

ID (A)

20 VDS = 10V

VGS = 4V

VGS = 0V

10

0.10

VGS = 10V

0.06

0.02 –50

0

50

100

10

IDR (A)

Re (yfs) (S)

RDS (ON) (Ω)

5

5

2 0.4

150

1

5


D

As

R

VDS (V)

7

10

s

ID (A)

s 1

4

2

50

6

0m

Capacitance (pF)

s

5m 1m s 10

5

1

10


3

Crss

50

1.2

m

Coss

10

ID (DC) max

10

500

0.8

VSD (V)

(Ta = 25ºC)

Ciss

5

0.4

0.

VGS = 0V f = 1MHz

1

0

ID (pulse) max S (o n) LI su me M IT dV ED GS =4 V li ne

50

100

0.1

20


2000

120

10

ID (A)

Tc (ºC)

1000

1 0.5

0.5 0.5

1

5

10

VDS (V)

50 100

8

5

11

9

12

MOS FET Array SLA5098 (under development)

PT Tch Tstg

)

W

Tc=25°C, 90 ( All circuits operate )

W

150 –55 to +150

ºC ºC

* PW 100µs, duty 1%

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD

ID = 100µA, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 10A VGS = 10V, ID = 10A

t rr

VDS = 10V f = 1.0MHz VGS = 0V ID = 10A VDD = 14V RL = 1.4Ω VGS = 10V RG = 50Ω ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V di/dt = 100A/µs

min

max

40 ±10 100 1.5 10

2.5 17 1450 420 260 40 40 200 100 0.85 45

1.2

Unit

V µA µA V S mΩ pF pF pF ns ns ns ns V

Ellipse 3.2±0.1 • 3.8

31.0±0.2 3.2±0.1

24.4±0.2

4.8±0.2 1.7±0.1

±0.2

16.4


Without heatsink, Ta=25°C, All circuits operate

Test Conditions


9.9±0.2

mJ A

Symbol


16.0±0.2

To be defined To be defined


13.0±0.2

Unit V V A A

8.5max

5(

Ratings 40 ±20 20 40

a b

2.7

Symbol VDSS VGSS ID ID (pulse)* EAS IAS

9.5min (10.4)


15

Pin 1 +0.2

+0.2

0.65 –0.1

1.2±0.15

2.2±0.7

0.55 –0.1

+0.2

1.15 –0.1 14•P2.03±0.4 = 28.42±0.8 31.5 max


1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

(Unit: mm)

ns


4

9

5

14

10

15

3

2

8

7

1

13

12

6

11

121

MOS FET Array SMA5113

35 (Tc=25ºC, All circuits operate, ∞ Fin)

Unit V V A A W W

130 7

mJ A

4 (Ta=25ºC, All circuits operate, No Fin)

PT EAS *2 IAS j-a

31.2

Junction - Ambientare, Ta=25ºC, All circuits operate

ºC/W

j-c

3.57

Junction - Case, Ta=25ºC, All circuits operate

ºC/W


Test Conditions


ID = 100µA, VGS = 0V VGS = ±30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A


Tch Tstg

ºC 150 ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω

Unit

max

450

V nA µA V S Ω pF pF pF ns ns ns ns V

±100 100 4.0

2.0 3.5

5.0 0.84 720 150 65

VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD 200V RL = 57Ω VGS = 10V RG = 50Ω

1.1

25 40 70 50 1.0

ISD = 7A, VGS = 0V

1.5


4.0±0.2 31.0±0.2

5

5

4

4

5V

3

+0.2

1.2±0.1

31.5 max (Including both-side resin burr)

1 2 3 4 5 6 7 8 9 10 11 12


VGS = 10V

VDS = 20V

3

15

0

20

1.0

0.5

Ta = –55ºC 25ºC 150ºC

1

1

10

+0.2

0.55 –0.1

■ RDS (ON) — ID Characteristics

2

VGS = 4.5V

5

1.21±0.15 1.46±0.15 0.85 –0.1

RDS (ON) (Ω)

6

ID (A)

6

0

b a

1.5

5.5V

10V

2

2.5±0.2

30º

11• P2.54±0.1=27.94

7

7

ID (A)

min

External Dimensions SMA (LF1000)

(Unit: mm)


0


10.2±0.2

Ratings 450 ±30 ±7 ±28

2.4

Symbol VDSS VGSS ID ID (pulse) *1

(10.4)


0

2

VDS (V)

4

6

8

0

10

0

1

2

3

VGS (V)



2.5

5

6

7

■ IDR — VSD Characteristics

100

7 VDS = 20V

VGS = 10V ID = 3.5A

VGS = 0V

6

50

2.0

4

ID (A)

1.0

IDR (A)

Re (yfs) (S)

RDS (ON) (Ω)

5 1.5

Ta = –55ºC 25ºC 150ºC

10

4 3 2

5

0.5

1 2 0.05 0.1

0 –50

0

50

100

150

0.5

Tc (ºC)

1

0.2

0.4

(Ta = 25ºC)

50 Ciss

0.6

0.8

1.0

VSD (V)


1000


ID (pulse) max

10

500 VGS = 0V f = 1MHz

100

ED IT IM )L

10 ID (DC) max

Coss

S

(o

0µ s

1m

s

n

5

ID (A)

Capacitance (pF)

0

ID (A)


10

RD

10

3

6

7

10

m

s

0m

s

1

1

4

8

11

0.5 50

2

Crss

0.1 0.05

20 0

10

20

30

VDS (V)

122

0

7

40

50

3

5

10

50

VDS (V)

100

500

5

9

12

MOS FET Array STA508A


VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω ISD = 6A, VGS = 0V

0.2 0.25

1.5


16

±0.5

C1.5

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S


■ R DS (ON) — I D Characteristics 0.30 0.25

VGS = 4.5V

RDS (ON) (Ω)

VGS = 4V

ID (A)

6 Ta = –55ºC 25ºC 75ºC 150ºC

4

4 2

0

1

2

3

4

5

0

6

0.15 VGS = 10V

0.10

0

1.0

2.0

3.0

0

4.0

0

2

4

VGS (V)

8

10

1.0

1.2


50

0.45

6

ID (A)


■ R DS (ON) — TC Characteristics ID = 4A

0.20

0.05

VDS (V)

0.40

±0.3

0

±0.05

VDS = 10V

8

0

±0.3

9 •2.54=22.86

8

12

(2.54)

±0.15

0.5

0

10 VGS = 10V

ID (A)

±0.25

1.0

±0.2

0.15 0.2 400 130 30 100 300 250 200 1.0

±0.2

1.0 5.0

b a

4.0

±5 100 2.0

±0.2

±0.15


V µA µA V S Ω Ω pF pF pF ns ns ns ns V

1.2

RDS (ON)

25.25

120

±0.2

ID = 100µA, VGS = 0V VGS = ±20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A

Unit

max

9.0


min

±0.2

Test Conditions

±0.2

Symbol


0.5

4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 80 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω PT


2.3


(Ta=25ºC) Unit V V A A W W

11.3

Ratings 120 ±20 ±6 ±10

±0.5

Symbol VDSS VGSS ID ID (pulse)*1

3.5


6 VGS = 0V

VGS = 4V

5

VGS = 10V

0.20

Ta = –55ºC 25ºC 75ºC 150ºC

1 0.5

0.10

0.1 0.05 0.1

0 –50

0

50

100

150

0.5

Tc (ºC)

1

5

3 2 1 0

10

0

0.2

0.4

ID (A)

(Ta = 25ºC)

20

1000 500

ID (pulse) max

10

Ciss

5

ID (A)

Coss

50


0µ s

1m

s

10

m

RDS (on) LIMITED

100

0.8

10

ID (DC) max

VGS = 0V f = 1MHz

0.6

VSD (V)



Capacitance (pF)

Ta = 150ºC 75ºC 25ºC –55ºC

4

5

IDR (A)

Re (yfs) (S)

RDS (ON) (Ω)

10 0.30

s

10

5

3

7

9

0m

s

1

2

0.5

1

4

6

8

10

Crss

0.1

10 0

10

20

30

VDS (V)

40

50

1

5

10

50

100 200

VDS (V)

123

MOS FET Array STA509A


ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10Ω ISD = 6A, VGS = 0V

1.5

±0.2

±0.3

±0.3

0

0

±0.05

9 •2.54=22.86

±0.5

C1.5

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S


0.8

20

VGS = 4V

(2.54)

±0.15

0.5

■ R DS (ON) — I D Characteristics


6

±0.25

1.0

VGS = 4V

VDS = 10V

10

5

Ta = 150ºC

VGS = 5V VGS = 10V

0.6

RDS (ON) (Ω)

4

ID (A)

3 2

0.1

VGS = 3V

Ta = –55ºC 25ºC 75ºC 150ºC

1

0

2

4

6

8

10

12

0.01

14

1

2

4

5

6

1

2

3

4

5

6

■ I DR — VSD Characteristics 10

10 ID = 1A

VDS = 10V

5

Re (yfs) (S)

VGS = 4V typ.

0.4

0.3 VGS = 10V typ.

0.2

8

1

Ta = –55ºC 25ºC 150ºC

0.5

0.1

0.2 0.05 0.1

0 50

100

150

0.5

Ta = 150ºC 75ºC 25ºC –55ºC

6

4

2

1

0

6

0

0.2

0.4

ID (A)

Tc (ºC)

(Tc = 25ºC)

10 ED

1.4


s

(o

m

3

s

ID (A)

1.2

10

R

LI

1.0

0µ s

1m

IT

M

n)

S D

0.8

10

ID (pulse) max

5

0.6

VSD (V)


5

7

9

1 2

0.5

0.1 0.5

1

1

5

VDS (V)

124

0

ID (A)


0.5

0

–55ºC

VGS (V)


RDS (ON) (Ω)

3

25ºC

0.4

0 0

VDS (V)

–50

75ºC

0.2

IDR (A)

ID (A)

1

0

±0.2


0.25 0.3

b a

±0.2

0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0

V µA µA V S Ω Ω pF pF pF µs µs µs µs V

4.0

1.0 1.0

±0.2

25.25

57 ±1.0 100 2.5

±0.15


52

1.2

RDS (ON)

47

9.0

ID = 1mA, VGS = 0V VGS = ±20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A

Unit

max

±0.2


min

±0.2

Test Conditions

External Dimensions STA

0.5

4 (Ta = 25ºC) 20 (Tc = 25ºC) EAS *2 40 mJ Tch ºC 150 Tstg ºC –55 to +150 *1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10Ω PT

Symbol


2.3


Unit V V A A W W

11.3

Ratings 52±5 ±20 ±3 ±6

±0.5

Symbol VDSS VGSS ID ID (pulse) *1

3.5


10

50

4

6

8

10

Thyristor with built-in reverse diode for HID lamp ignition TFC561D

External Dimensions (unit: mm) 4.44±0.2

(1.4)

1.3±0.2

11.3±0.5

8.6±0.3

10.2±0.3

+0.3

● Repetitive peak off-state voltage: VDRM=600V ● Repetitive peak surge on-state current: ITRM=430A ● Critical rate-of-rise of on-state current: di/dt=1200A/µs ● Gate trigger current: I GT=20mA max ● With built-in reverse diode

10.0 –0.5

Features

1.2±0.2

2.59±0.2 ±0.5

1.27±0.2 +0.2

Parameter

Symbol

0.76±0.1

Ratings

Unit

Conditions

VDRM

600

V

Repetitive surge peak on-state current

ITRM

430

A

Critical rate-of-rise of on-state current

di/dt

1200

A/µs

*

Peak forward gate current

IFGM

2.0

A

f

50Hz, duty

10%

f

50Hz, duty

10%

f

50Hz

PGM

5.0

W

Average gate power loss

PG (AV)

0.5

W

Peak reverse gate voltage

VRGM

5

V

Diode repetitive peak surge forward current

I FRM

240

A


Tj

–40 to +125

ºC

Storage temperature

Tstg

–40 to +125

ºC

2.54±0.5

Tj=–40 to +125°C,

Repetitive peak off-state voltage

Peak gate power loss

11.0

0.86 –0.1


2.54±0.5

RGK=1kΩ VD

430V, 100kcycle,

*

0.4±0.1

(1). Cathode (K) (2). Anode (A) (3). Gate (G)

(1) (2) (3)

Wp=1.3µs, Ta=125°C

VD

Weight: Approx. 1.5g

Measurement circuit

430V, 100kcycle,

L

*

Wp=1.3µs, Ta=125°C

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

VD

Sample

C

G1

cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.

G2


(Tj=25ºC)

Ratings

Symbol min

typ

Unit

Conditions

max IT=10A

On-state voltage

VTM

1.4

V

Gate trigger voltage

VGT

1.5

V

VD=6V, RL=10Ω

Gate trigger current

IGT

20

mA

VD=6V, RL=10Ω

Gate non-trigger voltage

VGD

Holding current

IH

0.1 2

10.0

V

VD=480V, Tj=125ºC

mA

RG–K=1kΩ, Tj=25ºC

Off-state current (1)

IDRM (1)

100

µA

VD=VDRM, RG–K=1kΩ, Tj=25ºC


IDRM (2)

1

mA

VD=VDRM, RG–K=1kΩ, Tj=125ºC

Thermal resistance

Rth

4.0

ºC/W

Diode forward voltage

VF

1.4

V

Junction to case IF=10A

Current waveform (1cycle) (Ta=25ºC)

100A/div

Parameter

2µs/div

125

Thyristor with built-in reverse diode for HID lamp ignition TFC562D


Features

4.44±0.2 (1.4) 9.1±0.3 (2.69) (1.8)

+0.2

1.34 –0.1

+0.2

0.86–0.1

Symbol

Ratings

Unit

Repetitive peak off-state voltage

VDRM

600

V

Repetitive surge peak on-state current

ITRM

600

A

Critical rate-of-rise of on-state current

di/dt

1600

A/µs

Peak forward gate current

IFGM

2

A

f

50Hz, duty 10%

Peak gate power loss

PGM

5

W

f

50Hz, duty 10%

Average gate power loss

PG (AV)

0.5

W

Peak reverse gate voltage

VRGM

5

V

f

50Hz

Diode repetitive peak surge forward current

I FRM

460

A

Ta = 100°C, VD 430V, WP = 1.05µs, 100kcycle*, See the examples of current waveforms


Tj

–40 to +125

ºC

Storage temperature

Tstg

–40 to +125

ºC

Conditions Tj = –40 to +125°C,

0.76±0.1

RGK = 1kΩ Ta = 100°C, VD 430V, WP = 1.05µs, IG = 70mA, dig/dt = 0.5A/µs, 100kcycle*, See the examples of current waveforms

0.4±0.1 2.54±0.1 (Root dimension)

2.54±0.1 (Root dimension) 10.2±0.3

1

2

3

Current waveform (1cycle)

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

(Ta=100ºC)

cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.

Electrical Characteristics min

typ

max

Unit

Conditions

On-state voltage

VTM

1.4

V

IT = 10A

Gate trigger voltage

VGT

1.5

V

VD = 6V, RL = 10Ω

Gate trigger current

IGT (1)

20

mA

VD = 6V, RL = 10Ω

Gate non-trigger voltage Holding current

126

Symbol

(Tj=25ºC)

Ratings

VGD

0.1

IH

2

5

V

VD = 480V, Tj = 125°C

mA

RG–K = 1kΩ, Tj = 25°C


IDRM (1)

10

µA

VD = VDRM, RG–K = 1kΩ, Tj = 25°C


IDRM (2)

1

mA

VD = VDRM, RG–K = 1kΩ, Tj = 125°C

Thermal resistance

Rth

4.0

°C/W

Junction to case, With infinite heatsink

Diode forward voltage

VF

1.4

V

IF = 10A

V: 200A/div

Parameter

2.6±0.2 (Root dimension)

11.0±0.5

Parameter

a b


1.3±0.2

+0.3

(0.45)

(5)

10.5 – 0.5

● Repetitive peak off-state voltage: VDRM=600V ● Repetitive peak surge on-state current: ITRM=600A ● Critical rate-of-rise of on-state current: di/dt=1600A/µs ● Gate trigger current: I GT=20mA max ● With built-in reverse diode

H: 2µs/div * A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100°C (= Ta). Repeat this cycle operation.

Rectifier Diodes for Alternators ■ Normal Type Part No.

Absolute maximum ratings Tstg Tj IF (AV) IFSM (A) (A) (ºC)

VRM (V)

SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR SG-10LS SG-10LR SG-10LXS SG-10LXR SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR

VF (V) max

Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max

Condition IZ (mA)

200

20

200

–40 to +150

1.10

20

0.25

—

—

200

30

300

–40 to +150

1.10

30

0.25

—

—

200

35

350

–40 to +150

1.10

35

0.25

—

—

200

30

300

–40 to +150

1.2

100

0.25

—

—

150

35

350

–40 to +150

1.05

100

0.25

—

—

200

40

400

–40 to +150

1.05

100

0.25

—

—

150

45

450

–40 to +150

1.0

100

0.25

—

—

Fig. No. 1

2

3

■ Zener Type Part No.

Absolute maximum ratings Tj Tstg IF (AV) IFSM (A) (A) (ºC)

VRM (V)

SG-9CZS SG-9CZR SG-9LLCZS SG-9LLCZR SG-10LZ23S SG-10LZ23R SG-10LLZ23S SG-10LLZ23R SG-14LXZS SG-14LXZR

VF (V) max

Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max

Condition IZ (mA)

Fig. No.

17

20

200

–40 to +200

1.10

20

0.05

23±3

10

1

17

35

350

–40 to +200

1.10

35

0.05

23±3

10

2

17

30

300

–40 to +150

1.2

100

0.05

23±3

10

17

40

400

–40 to +150

1.05

100

0.05

23±3

10

16

35

350

–40 to +200

1.15

100

0.05

22±3

100

3

4


1.5

1.5

3.1±0.1

3.1±0.1

S: 19.0±1.0 R: 23.0±1.0

Fig. 2 S: 19.0±1.0 R: 23.0±1.0

Fig. 1

1 8.4±0.2

S type

5.0

Fig. 4

2

R type

12.84 11.5 1.26

S : 20.5 R : 28.5

(1.5) (4°)

(2)

24.0

2.0

R1.2

°) 3.0 4.2 5.0

°)

0.4 1.0

Polarity

Polarity

0.6

4.0 4.7 8max 10max

(30

3.6

1.4

(45

4.4

R type

S type 9.0

0.3

2.5

(5.8)

S type

10.7

13.5 10.0

9.5±0.2

R type

Polarity

1.2

7.0±0.2 8.4±0.2

Fig. 3

5±0.4

Polarity

1.2

5±0.4

1

(R0.5)

S type

R type

127

High-voltage Diodes for Igniters

Part No.

VRM (kV)

Electrical Characteristics (Ta=25ºC)

Absolute Maximum Ratings IRSM IRSM IF (AV) (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100µs half-power average signal bandwidth

SHV-01JN

0.5

30

30

3

SHV-05J

2.5

30

30

3

SHV-06JN

3.0

30

10

3

Tj

Tstg

VF (V) max

(ºC)

IR Vz (µA) (kV) VR =VRM IR =100µA IF (mA) max

Condition

1 –40 to +150

5

10

10

6

Fig. No.

0.55 to 1.0

2

2.6 to 5.0

1

3.2 to 6.0

2

External Dimensions (unit: mm) Fig. 2 (SHV-06JN) 2.5 C0.5

±0.2

2.5±0.2

0.5

0.5

Fig. 1 (SHV-05J)

C0.5 27min

27min 5±0.2

128

27min

6.5

27min

Power Zener Diode

(Ta=25ºC)

Absolute Maximum Ratings Part No.

P (W)

SFPZ-68

1

SJPZ-K28 *

1

SJPZ-E18 *

1

SJPZ-E27 *

1

SJPZ-E33 *

1

SJPZ-E36 *

1

PZ628

5

Condition

(ºC) –40 to +150

25.0 to 31.0

1

10

1

2

–55 to +150

25.0 to 31.0

1

10

2

—

–55 to +150

16.8 to 19.1

1

10

2

—

–55 to +150

25.1 to 28.9

1

10

2

25

—

–55 to +150

31.0 to 35.0

1

10

2

27

—

–55 to +150

34.0 to 38.0

1

10

2

20

65*1

–40 to +150

25.0 to 31.0

10

50

3

VDC (V)

I ZSM (A)

50 (5ms)

20

2

20 13 20

1500 (5ms)

IR Fig. VR =VDC No. (µA) IZ (mA) max

VZ (V) 1mA instantaneous current

PR (W)

85 (500µs)


Tj

Tstg

SZ-10N27

5

—

22

70*1

–55 to +175

24 to 30

10

10

4

SZ-10N40 *

5

—

22

40*1

–55 to +175

36 to 40

10

10

4

SZ-10NN27

6

—

22

90*1

–55 to +175

24 to 30

10

10

4

SZ-10NN40 *

6

—

22

55*1

–55 to +175

36 to 40

10

10

4

Remarks

Surface-mount type

Axial type

* 1: IZSM conditions IRSM IRSM

Surface-mount type

2

0

10ms

Time

* under development


Fig. 1

Fig. 2

4.5±0.2

2.0min

5.1

Fig. 3

1.35 ±0.4

+0.4 –0.1

1.1±0.2

1.3±0.4

1.3 ±0.05 C2 Cathode marking

0.05–0.05

+0.1 +0.4

1.3±0.4

1.5±0.2

5.0 –0.1

1.5±0.2

Fig. 3

8.5±0.5 10±0.3

5±0.3

2.7±0.3 7.2±0.5

(9.75)

15.5±0.5

10±0.3

10.0 ±0.2

13.5±0.3

56.0 ±0.7 10.0 ±0.02

2±0.3

3±0.5

2.0±0.5

1.35 ±0.4

2.15±0.2

0.05

2.05 ±0.2

2.6±0.2

2.6 ±0.2

4.5 ±0.2

129

General-purpose Diodes

Rectifier Diodes ■ Surface-mount VRM (V)

Part No.

SFPM-52

I F (AV) (A)

I FSM (A) Peak value of 50 Hz half-wave signal

Tj (ºC)

Tstg (ºC)

I R (H) (mA)

IR (µA)

VF (V) max

Condition I F (A)

VR=VRM max

VR=VRM Condition Ta (°C) max

Rth (j-l) (°C/W)

Package

Weight (g)

0.9

30

1.0

1.0

10

50

100

20

1

0.072

SFPM-62

1.0

45

0.98

1.0

10

50

100

20

1

0.072

SFPM-54

0.9

30

1.0

1.0

10

50

100

20

1

0.072

1.0

45

0.98

1.0

10

50

100

20

1

0.072

200

–40 to +150 400

SFPM-64

Ultra Fast Recovery Rectifier Diodes ■ Surface-mount VRM (V)

Part No.

I F (AV) (A)


Tj (ºC)

Tstg (ºC)

I R (H) (mA)

IR (µA)

VF (V) max

Condition I F (A)

VR=VRM max

t rr (ns)


Condition I F/IRP (mA)

t rr (ns)

Condition I F/IRP (mA)

Rth (j-l) (°C/W)

Package

Weight (g)

SFPL-52

0.9

25

0.98

1.0

10

1

150 (Tj)

50

100/100

35

100/200

20

1

0.072

SFPL-62

1.0

25

0.98

2.0

10

1

150 (Tj)

50

100/100

35

100/200

20

1

0.072

MPL-102S

10.0

65

0.98

5.0

100

0.2

150

40

100/100

30

100/200

2.5

2

1.4

MP2-202S

20.0

110

0.98

10.0

200

0.4

150

50

100/100

35

100/200

2.5

2

1.4

1.0

25

1.3

1.0

10

0.05

150

50

100/100

30

100/200

20

1

0.072

IR (µA)

I R (H) (mA)

200

400

SFPL-64

–40 to +150

Schottky Barrier Diodes ■ Surface-mount Part No.

VRM (V)

I F (AV) (A)


Tj (ºC)

Tstg (ºC)

VF (V) max

Condition I F (A)

VR=VRM max


Rth (j-l) (°C/W)

Package

Weight (g)

SFPJ-53 *

30

1.0

30

0.45

1.0

1.0

35

150

20

1

0.072

SFPJ-63

30

2.0

40

0.45

2.0

2.0

70

150

20

1

0.072

SFPJ-73

30

3.0

50

0.45

3.0

3.0

100

150

20

1

0.072

SFPB-54

40

1.0

30

0.55

1.0

1

35

150

20

1

0.072

SFPB-64

40

2.0

60

0.55

2.0

5

70

150

20

1

0.072

SFPE-64

40

2.0

40

0.6

2.0

0.2

70

150

20

1

0.072

SFPB-74

40

3.0

60

0.5

2.0

5

100

150

20

1

0.072

SFPB-56

60

0.7

10

0.62

0.7

1

30

150

20

1

0.072

SFPW-56

60

1.5

25

0.7

1.5

1

70

150

20

1

0.072

SFPB-66

60

2.0

25

0.69

2.0

1

55

150

20

1

0.072

SFPB-76

60

2.0

40

0.62

2.0

2

70

150

20

1

0.072

SFPB-59

90

0.7

10

0.81

0.7

1

30

150

20

1

0.072

SFPB-69

90

1.5

40

0.81

1.5

2

55

150

20

1

0.072

–40 to +150

* under development


0.7

c

4.9 0 to 0.25

1.15 ±0.1 2.29 ±0.5 2.29 ±0.5

0.8 ±0.1

a) Part No. b) Polarity c) Lot No.

0.5 ±0.2

1.1 ±0.2

1.2max

b

2.5 ±0.4

0.05 +0.4

5.1 –0.1

1.35 ±0.4

0.16

2.9

5.5 ±0.4

2.6 ±0.2 2.05 ±0.2

2.0min

5.4 4.1 1.37

0.55 ±0.1

a

0.8±0.1

1.35 ±0.4

2.3±0.4

6.5 ±0.4 5.4 ±0.4 1.7 ±0.5

4.5

2: (TO-220S)

±0.2

0.55 ±0.1

1.5 ±0.2

(Common with heatsink)

1.5 max N.C

130

5.0

1: (Surface-mount SFP)

Cathode

Anode

General-purpose Diodes - Taping Specifications

Taping Specifications Taping Name

1.35 ±0.4

2.0min

Marking of Part No., Lot No., quantity, etc.

1.5

5.5 ±0.05

4.0

+0.1 –0

±0.1

2.0 ±0.5 5.5

13 ±0.5

1,800 pcs. 65

1.35 ±0.4

12.0 ±0.3

2.05 ±0.2

+ 0.1

0.05 –0.05

2.6 ±0.2

4.5

±0.2

±0.2

1.1 1.5 ±0.2

+0.4

5.1 – 0.1

Packaging Quantity

Reel

1.75 ±0.1

Emboss taping

V

Packaging Dimensions (mm) and Markings

Taping Dimensions (mm)

2.0

per reel

21±0.8

R1.0 2.6

Pull out direction

4.0 ±0.1

A suffix "V" is added to Part No. for tape packaging.

14±1.5

178 ±2

3.1

(1) The right side of the tape is the cathode viewing in the unfold direction. (2) The product is inserted into the case with the installed electrode on the lower side. (3) A leader tape 150 to 200mm long is provided on the unfolding edge. (4) A space of at least 10 pitches equivalent is provided on either end of the tape. (5) Taping with reversed diode polarity is available on request (taping name VL).

2.0 ±0.5

Power Surface-mount - Taping Specifications Taping Name


Packaging Dimensions (mm) and Markings Part No.

Pull out direction

Materials Disc: both-face white corrugated cardboard Core: foamed styrol

Quantity

VL

Taping name (type)

Packaging Quantity

Lot No.

3,000 pcs. 1 3 8

10 100±1

330±2

13±0.2

40

60

22

B

20

11.5±0.1

per reel

4.9±0.1

80

(Seal part)

12±0.1

24±0.3

14.4±0.1

4±0.1

(Bottom dimensions)

21.5±0.1

2±0.1

120°

10.8±0.1

(Seal part)

R135

±0.1

(Bottom dimensions)

VR

25.5±1 29.5±1

0.4±0.1

2.5

Pull out direction

(Cover tape)

+0.1 1.5 0

1 3 8

10

A suffix "VL" is added to Part No. for tape packaging.

1.75 ±0.1

35°

5.4max

3,000 pcs.

7 ±0.5

9±0.5

per reel

2±0.5

21±0.8

.5 ±0

5

A suffix "VR" is added to Part No. for tape packaging.

.2 ±0

13 13±0.5

High-voltage diodes for ignition - Taping Specifications Taping Name



Packaging Quantity

5±0.5

Axial taping Part No.

1.2 max

V1

Lot No. Quantity ±1.5

1.0 max 6 ±1.0

58 ±1

6 ±1.0

25

A suffix "V1" is added to Part No. for tape packaging.

per reel

±1

29 75 ±1.5

5,000 pcs.

340±2

131

General-purpose Diodes - Taping Specifications

Power Zener Surface-mount - Taping Specifications Taping Name



Packaging Quantity

Pull out direction

VL

750 pcs. 1 3 B

4°

VR

R TYPE

L TYPE

25.5±1 29.5±1

0.40±0.05

10.80±0.1 8°

per reel

2±0.5

21±0.8

5 ±0.

5

±0

13

.2

132

750 pcs.

9±0.5

7 ±0.5

8°

A suffix "VR" is added to Part No. for tape packaging.

100±1

330±2

40

20

60

80

120°

1.50±0.25

16.00±0.1

13±0.2

B

22

16.00±0.1

10

R135

Pull out direction

per reel

5.64±0.1

4°

11.50±0.1

2.00±0.1

+0.3

4.00±0.1

24.00–0.1

1.50±0.1

1 3 B

10

A suffix "VL" is added to Part No. for tape packaging.

1.75±0.1

35°

13±0.5

The label showing the product name, quantity and production lot is attached to the reel.

3

LEDs 3-1. Uni-Color LED Lamps

..............

134

3-2. Bi-Color LED Lamps

..................

137

3-3. Surface Mount LEDs

..................

138

.....................................

140

3-4. Infrared LEDs

3-5. Ultraviolet LEDs ............................... 141 3-6. Multi-chip Modules

.....................

142

133

General-purpose LEDs

Uni-Color LED Lamps Absolute Maximum Ratings

mW

GaAsP

A GaInP

mA

30

mA /ºC

– 0.45

I FP

mA

VR

V

Top

ºC

Tstg

ºC

Deep red

High-intensity red Red Amber Orange Yellow Green Pure green Red Amber

5 Round

Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity orange Ultra high-intensity pure green Ultra high-intensity blue Ultra high-intensity blue Ultra high-intensity red

Red Amber Orange Green Pure green Ultra high-intensity pure green Ultra high-intensity blue High-intensity red

4.6✕5.6 Egg-shaped

Ultra high-intensity red

Green Deep red Red

4 Round

Amber Orange Yellow

GaN

Conditions

120

IF

Emitting color

InGaN

75

∆I F

Outline

134

GaP

Above 25ºC

100

70

3

f=1kHz, tw=100µs

5 –30 to +80

–30 to +85 –30 to +100

Part No.

SEL1110R SEL1110W SEL1110S SEL1610W SEL1610C SEL1210R SEL1210S SEL1810D SEL1810A SEL1910D SEL1910A SEL1710Y SEL1710K SEL1410G SEL1410E SEL1510C SEL1210RM SEL1210SM SEL1810DM SEL1810AM SEL1910DM SEL1910AM SEL1710KM SEL1410GM SEL1410EM SEL1510CM SELU1210CXM SELU1910CXM-S SELU1D10CXM SELU1E10CXM SELS1E10CXM-M SELU1250CM SEL1250SM SEL1250RM SEL1850AM SEL1850DM SEL1950KM SEL1450EKM SEL1450GM-YG SEL1550CM SELU1D50CM SELU1E50CM SEL1615C SELU1253CMKT SEL1453CEMKT SEL4110S SEL4110R SEL4210S SEL4210R SEL4810A SEL4810D SEL4910A SEL4910D SEL4710K SEL4710Y

VF (V)

Lens color typ

max

2.0

2.5

1.75

2.2

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0 2.0 2.0 3.3 3.3 3.7 2.0

2.5 2.5 2.5 4.0 4.0 4.2 2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0 3.3 3.3 1.75 2.0 2.0

2.5 4.0 4.0 2.2 2.5 2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

Diffused red Diffused white Tinted red Diffused white Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Diffused yellow Tinted yellow Diffused green Tinted green Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Tinted yellow Diffused green Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted red Diffused red Tinted orange Diffused orange Tinted orange Tinted green Diffused green Clear Clear Clear Clear Clear Tinted green Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength IV λp (nm) λp (nm) (mcd) Condition IF (mA) typ typ typ 2.8 5 2.8 625 700 4.5 250 20 642 660 300 26 20 620 630 75 18 10 605 610 37 14 10 590 587 25 22 10 571 570 65 32 20 567 560 84 20 50 559 555 36 20 620 630 75 18 10 605 610 37 19 10 590 587 34 10 65 571 570 30 20 567 560 84 20 50 559 555 20 280 625 635 20 450 589 591 20 2000 530 525 20 600 470 468 20 1000 470 468 20 900 625 635 75 20 620 630 48 90 20 605 610 60 20 96 590 587 190 20 567 560 120 20 72 559 555 20 6000 530 525 20 1850 470 468 20 170 642 660 20 200 625 635 20 140 567 560 2.4 5 625 700 1.7 30 20 620 630 17 20 10 605 610 15 26 10 590 587 16 36 10 571 570 14

Chip material

Fig. No.

Unit

PD

Contact mount

Parameter

(Ta=25ºC) Ratings GaA As

GaP

GaA As GaAsP GaAsP

1

GaAsP GaP GaP GaP GaAsP GaAsP GaAsP

2

GaP GaP GaP A GaInP A GaInP InGaN InGaN InGaN A GaInP

3

GaAsP GaAsP GaAsP

4

GaP GaP InGaN InGaN GaA As A GaInP GaP

5 6

GaP GaAsP GaAsP GaAsP GaP

7


Emitting color

Green Ultra high-intensity green

Pure green Deep red Red

4 Round

Amber Orange Yellow Green Pure green Deep red Red Amber Ultra high-intensity orange

Orange Yellow Green Pure green Blue Ultra high-intensity deep red Ultra high-intensity red

Red Amber Ultra high-intensity light amber Ultra high-intensity orange

Orange

3 Round

Ultra high-intensity yellow

Yellow Green Ultra high-intensity green

Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue

Red Orange Yellow Green Pure green Deep red High-intensity red Ultra high-intensity deep red

Red

Amber Ultra high-intensity light amber

Part No.

SEL4410E SEL4410G SELU4410CKT-S SEL4510C SEL4114S SEL4114R SEL4214S SEL4214R SEL4814A SEL4814D SEL4914A SEL4914D SEL4714K SEL4714Y SEL4414E SEL4414G SEL4514C SEL6110S SEL6110R SEL6210S SEL6210R SEL6810A SEL6810D SELU6910C-S SEL6910A SEL6910D SEL6710K SEL6710Y SEL6410E SEL6410G SEL6510C SEL6510G SEL6E10C SELU6614C-S SELU6614W-S SELU6214C SEL6214S SEL6814A SELS6B14C SELU6914C-S SEL6914A SEL6914W SELU6714C SEL6714K SEL6714W SEL6414E SELU6414G-S SEL6414E-TG SEL6514C SELS6D14C SELS6E14C-M SEL6215S SEL6915A SEL6715C SEL6415E SEL6515C SEL2110S SEL2110R SEL2110W SEL2610C SELU2610C-S SEL2210S SEL2210R SEL2210W SEL2810A SEL2810D SELU2B10A-S

Lens color Tinted green

VF (V) typ

max

2.0

2.5

2.1 2.0

2.5 2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

2.0

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

4.0

4.8

2.0

2.5

2.0 1.9 1.9 2. 2.0

2.5 2.5 2.5 2.5 2.5

1.9

2.5

2.1

2.5

2.0

2.5

2.0 2.1 2.0 2.0 3.3 3.7 1.9 1.9 2.0 2.0 2.0

2.5 2.5 2.5 2.5 4.0 4.2 2.5 2.5 2.5 2.5 2.5

2.0

2.5

1.75 2.0

2.2 2.5

1.9

2.5

1.9

2.5

2.0

2.5

Diffused green Clear Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Clear Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Diffused white Clear Tinted red Tinted orange Clear Clear Tinted orange Diffused white Clear Tinted yellow Diffused white Tinted green Diffused green Tinted green Clear Clear Clear Tinted red Tinted orange Clear Tinted green Clear Tinted red Diffused red Diffused white Clear Clear Tinted red Diffused red Diffused white Tinted orange Diffused orange Tinted orange

Electro-optical characteristics (Ta=25ºC) IV Peak wavelength Dominant wavelength (mcd) Condition λp (nm) λp (nm) typ typ typ IF (mA) 87 20 560 567 34 20 560 562 170 20 555 559 45 3.8 10 700 625 2.8 40 20 630 620 24 20 10 610 605 15 26 10 587 590 11 38 10 570 571 27 69 20 560 567 48 20 26 555 559 3.9 10 700 625 2.6 41 20 630 620 18 22 10 610 605 9.6 20 550 591 589 22 10 587 590 11 37 10 570 571 11 90 20 560 567 30 42 20 555 559 9.6 20 60 430 466 150 20 650 639 90 20 180 635 625 20 18 630 620 10 9.0 610 605 20 120 600 596 20 180 591 589 8.0 10 587 590 5.0 20 60 572 571 66 20 570 571 30 42 20 560 567 30 20 560 562 18 20 558 564 12 20 555 559 300 20 518 525 70 20 468 470 45 20 630 620 60 20 587 590 90 20 570 571 81 20 560 567 44 20 555 559 4 1.8 10 700 625 1.8 60 20 660 642 300 20 650 639 40 15 20 630 620 15 22 10 610 605 9.0 300 20 598 595

Chip material

Fig. No.

Outline

Contact mount

Uni-Color LED Lamps

GaP A GaInP GaP

7

GaP GaAsP GaAsP GaAsP

8

GaP GaP GaP GaP GaAsP GaAsP A GaInP GaAsP

9

GaP GaP GaP GaN A GaInP A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP

10

GaP GaP A GaInP GaP GaP InGaN InGaN GaAsP GaAsP GaP GaP GaP

11

GaP GaA As A GaInP 12 GaAsP

GaAsP A GaInP

135


Emitting color

Orange Ultra high-intensity yellow Yellow

Green

Pure green Ultra high-intensity pure green Ultra high-intensity blue

3 Round

Blue Ultra high-intensity red Red

Amber

Orange

Yellow

Green Pure green Red Amber Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity light amber

Inverted-cone typ for surface illumination

Green Deep green Pure green High-intensity red Red Amber Orange Yellow Green Pure green High-intensity red Ultra high-intensity deep red Ultra high-intensity red Red Ultra high-intensity amber

5mm Pitch lead rectangular

Amber Ultra high-intensity light amber Orange Ultra high-intensity yellow Green Pure green Blue Ultra high-intensity red Red Amber Ultra high-intensity light amber Ultra high-intensity orange

5mm Pitch lead bow-shaped

Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity blue Blue

136

Part No.

SEL2910A SEL2910D SELU2710C SEL2710K SEL2710Y SEL2410E SEL2410G SEL2510C SEL2510G SELU2D10C SELU2E10C SEL2E10C SELU2215R-S SEL2215S SEL2215R SEL2815A SEL2815D SEL2915A SEL2915D SEL2715K SEL2715Y SEL2415E SEL2415G SEL2515C SEL1213C SEL1813A SEL1913K SEL1713K SEL1413E SEL1513E SELU6213C-S SELS6B13W SEL6413E SEL6413E-TG SEL6513C SEL2613CS-S SEL2213C SEL2813A SEL2913K SEL2713K SEL2413E SEL2413G SEL2513E SEL5620C SELU5620S-S SELU5220C-S SEL5220S SELU5820C-S SEL5820A SELU5B20C SEL5920A SELU5720C SEL5420E SEL5520C SEL5E20C SELS5223C SEL5223S SEL5823A SELS5B23C SELS5923C SEL5923A SELU5723C SEL5723C SEL5423E SEL5523C SELU5E23C SEL5E23C

Lens color Tinted orange

VF (V) typ

max

1.9

2.5

2.1

2.5

2.0

2.5

2.0

2.5

2.0

2.5

3.3 3.3 4.0 2.0

4.0 4.0 4.8 2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 1.75 1.9 1.9 1.9 2.0

2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5

2.0

2.5

2.0 1.75 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.1 2.0 2.0 4.0 2.0 1.9 1.9 2.0 2.0 1.9 2.1 2.0 2.0 2.0 3.3 4.0

2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.8

Diffused orange Clear Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Clear Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Tinted orange Tinted light orange Tinted yellow Tinted green Tinted light green Clear Diffused white Tinted green Tinted green Clear Tinted light red Tinted red Tinted orange Tinted orange Tinted yellow Tinted green Diffused green Tinted green Clear Tinted red Clear Tinted red Clear Tinted orange Clear Tinted orange Clear Tinted green Clear Clear Clear Tinted red Tinted orange Clear Clear Tinted orange Clear Clear Tinted green Clear Clear Clear

Electro-optical characteristics (Ta=25ºC) IV Peak wavelength Dominant wavelength (mcd) Condition λp (nm) λp (nm) typ typ typ IF (mA) 16 10 590 587 8.0 20 270 571 572 40 10 571 570 14 77 20 567 560 20 43 20 559 555 8.2 20 1200 530 525 20 400 470 468 20 60 466 430 20 380 624 632 45 20 620 630 38 80 10 605 610 60 81 10 590 587 53 130 10 571 570 110 110 20 567 560 72 20 52 559 555 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 15 571 570 20 12 567 560 20 5.0 559 555 20 30 624 632 20 60 596 600 20 14 567 560 20 6 564 558 20 5.0 559 555 20 20 642 660 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 17 571 570 14 20 567 560 12 20 5.0 559 555 20 100 642 660 20 100 639 650 20 120 624 632 20 20 620 630 20 150 605 611 20 12 605 610 20 120 596 600 20 12 590 587 20 50 571 572 20 20 567 560 20 6.0 559 555 20 10 466 430 20 100 625 635 20 25 620 630 20 35 605 610 20 135 596 600 20 145 589 591 20 35 590 587 20 155 571 572 20 60 571 570 20 40 567 560 20 13 559 555 20 180 470 468 20 20 466 430

Chip material

Fig. No.

Outline

Contact mount

Uni-Color LED Lamps

GaAsP A GaInP GaP GaP

12

GaP InGaN InGaN GaN A GaInP GaAsP GaAsP GaAsP

13

GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP

14

15

16

GaP GaP GaA As A GaInP A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP A GaInP GaP GaP GaN A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP GaP InGaN GaN

17

18


Bi-Color LED Lamps Absolute Maximum Ratings

mW

GaP

GaAsP

IF

mA

30

∆I F

mA /ºC

–0.45

I FP

mA

100

VR

V

Top

ºC

–30 to +85

Tstg

ºC

–30 to +100

Outline

Part No.

SML11516C SML1516W SML1216C SML1216W SML1816W 5 Round

SML19416W SMLU12E16C SMLU12E16W SMLU12D16W SMLU18D16C SMLU18D16W-S SML72420C

3.3✕6 Rectangular

SML78420C SML79420C SML72423C SML72923C SML78423C

3.3✕6 Bow-shaped

SML79423C SMLS79723C SMLU72423C-S SMLU79423C-S

A GaInP

Also applies to simultaneous lighting Above 25ºC f=1kHz, tw=100µs

3

Emitting color

Conditions

InGaN 120

75

5

Lens color

Deep red Clear Pure green Deep red Diffused white Pure green Red Clear Green Red Diffused white Green Amber Diffused white Green Orange Diffused white Green Ultra high-intensity red Clear Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity pure green

VF (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength IV λp (nm) λp (nm) (mcd) Condition typ typ typ IF (mA)

Chip material

typ

max

2.0

2.5

15

20

700

625

GaP

2.0

2.5

50

20

555

559

GaP

2.0

2.5

6.0

20

700

625

GaP

2.0

2.5

20

20

555

559

GaP

1.9

2.5

65

20

630

620

GaAsP

2.0

2.5

90

20

560

567

GaP

1.9

2.5

60

20

630

620

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

50

20

610

605

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

45

20

587

590

GaAsP

2.0

2.5

60

20

560

567

GaP

2.0

2.5

500

20

632

624

A GaInP

3.3

4.0

400

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

150

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

700

20

525

530

InGaN A GaInP

2.0

2.5

800

20

611

605

Ultra high-intensity pure green

3.3

4.0

2000

20

525

530

InGaN

Ultra high-intensity amber

2.0

2.5

300

20

611

605

A GaInP

Ultra high-intensity pure green

3.3

4.0

500

20

525

530

InGaN

Red

1.9

2.5

15

20

630

620

AGaAsP

Green

2.0

2.5

20

20

560

567

GaP

Amber

1.9

2.5

10

20

610

605

GaAsP

Green

2.0

2.5

20

20

560

567

GaP

Orange

1.9

2.5

10

20

587

590

GaAsP

Green

2.0

2.5

20

20

560

567

GaP

Red

1.9

2.5

25

20

630

620

GaAsP

Green

2.0

2.5

35

20

560

567

GaP

Red

1.9

2.5

25

20

630

620

GaAsP

Orange

1.9

2.5

25

20

587

590

GaAsP

Amber

1.9

2.5

25

20

610

605

GaAsP

Green

2.0

2.5

35

20

560

567

GaP

Orange

1.9

2.5

25

20

587

590

GaAsP

2.0

2.5

35

20

560

657

GaP

2.0

2.5

150

20

590

590

A GaInP

2.0

2.5

40

20

570

571

GaP

2.0

2.5

120

20

635

625

A GaInP

2.2

2.5

30

20

560

567

A GaInP

2.0

2.5

150

20

590

590

A GaInP

2.2

2.5

30

20

560

567

A GaInP

Ultra high-intensity amber Clear

Diffused white

Clear

Clear

Clear

Clear

Clear

Clear

Clear Green Ultra high-intensity orange Clear Yellow Ultra high-intensity red Clear Ultra high-intensity green Ultra high-intensity orange Clear Ultra high-intensity green

Common

Fig. No.

Unit

PD

Contact mount

Parameter

(Ta=25ºC) Ratings GaA As

Cathode Cathode Cathode Cathode Cathode Cathode

19

Cathode Cathode Cathode Cathode Cathode Cathode Cathode

20

Cathode Cathode Cathode Cathode Cathode

21

Cathode Cathode Cathode

137


Surface Mount LEDs Absolute Maximum Ratings

(Ta=25ºC)

Parameter

Unit

IF

mA

Ratings GaA As A GaInP 30

∆I F

mA /ºC

–0.45

I FP

mA

70

VR

V

4

Top

ºC

–30 to +85

Tstg

ºC

GaP

GaAsP

Conditions

GaN

InGaN

Above 25ºC f=1kHz, tw=100µs 5 –25 to +85

–30 to +100

Outline

Emitting color Red Amber Orange

Side view (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity blue Red Amber

Side view (inner lens type)

Orange Yellow Green Deep green Pure green Deep red High-intensity red Red Amber Orange

3✕1.5 (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue Blue High-intensity red Ultra high-intensity red Red Ultra high-intensity amber

3✕1.5 (inner lens type)

Amber Ultra high-intensity orange Orange Yellow Green Deep green Pure green

138

Part No.

SEC4201C SEC4801C SEC4901C SEC4701C SEC4401C SEC4401E-TG SEC4501C SECU4E01C SEC4203C SEC4803C SEC4903C SEC4703C SEC4403C SEC4403E-TG SEC4503C SEC1101C SEC1601C SEC1201C SEC1801C SEC1901C SEC1701C-YG SEC1401C SEC1401E-TG SEC1501C SECU1D01C SECU1E01C SEC1E01C SEC1603C SECS1203C SEC1203C SECS1803C SEC1803C SECS1903C SEC1903C SEC1703C SEC1403C SEC1403E-TG SEC1503C

Lens color

VF (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength IV λp (nm) (mcd) λp (nm) Condition IF (mA) typ typ typ

Chip material

typ

max

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

50

20

468

470

InGaN

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green

2.0

2.5

15

20

558

564

GaP

Clear

2.0

2.5

10

20

555

559

GaP

Clear

2.0

2.5

1.5

20

700

625

GaP

Clear

1.7

2.2

25

20

660

642

GaA As

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

150

20

525

525

InGaN

Clear

3.3

4.0

50

20

470

468

InGaN

Clear

3.9

4.8

6.0

20

430

466

GaN

Clear

1.7

2.2

35

20

660

642

GaA As

Clear

1.9

2.5

100

20

635

625

A GaInP

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

10

3

615

607

A GaInP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

70

20

590

590

A GaInP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green Clear

2.0

2.5

15

20

558

564

GaP

2.0

2.5

10

20

555

559

GaP

Fig. No.

Uni-Color Surface Mount LEDs

22

23

24

25


Surface Mount LEDs

Outline

Part No.

SEC2422C SEC2442C SEC2462C 3✕2.5 (flat lens type)

SEC2492C SEC2552C SEC2592C SEC2762C-YG SEC2484C SEC2554C

3✕2.5 (inner lens type)

SEC2494C SEC2764C SEC2774C

Emitting color Red Green Green Green High-intensity red Green Orange Green Pure green Pure green Orange Pure green High-intensity red Yellow Amber Green Pure green Pure green Orange Green High-intensity red Yellow Yellow Yellow

Lens color

Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear

VF (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength IV λp (nm) λp (nm) (mcd) Condition typ typ typ IF (mA) 20 10 620 630

Chip material

typ 1.9

max 2.5

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

560

567

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

5.0

20

555

559

GaP

2.0

2.5

5.0

20

555

559

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

5.0

20

555

559

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

570

571

GaP

1.9

2.5

20

20

610

605

GaAsP

2.0

2.5

30

20

560

567

GaP

2.0

2.5

10

20

555

559

GaP

2.0

2.5

10

20

555

559

GaP

1.9

2.5

20

20

587

590

GaAsP

2.0

2.5

30

20

560

567

GaP

1.7

2.2

50

20

660

642

GaA As

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

Fig. No.

Uni-color / Bi-color Surface Mount LEDs with two elements

GaAsP

26

27

139


Infrared LEDs Absolute Maximum Ratings Parameter

Unit

(Ta=25ºC) Conditions

Ratings

IF

mA

150

∆I F

mA /ºC

–1.33

Above 25ºC

I FP

mA

1000

f=1kHz, tw=10µs

VR

V

5

Top

ºC

–30 to +85

Tstg

ºC

–30 to +100

Part No.

typ

5 Round

3 Round 3 ✕ 1.5 (inner lens type) chip

140

SID1010CM SID1K10CM SID1010CXM SID1K10CXM SID1050CM SID303C SID313BP SID1003BQ SID307BR SID1G307C SID1G313C SID2010C SID2K10C SEC1G03C

Electro-optical characteristics (Ta=25ºC) Radiant intensity Ie Peak wavelength λp (nm) (mW/sr) Condition max typ typ

VF (V)

Lens color

Chip material

Clear

1.3

1.5

130

940

GaAs

Clear

1.3

1.5

200

940

GaAs

Clear

1.3

1.5

80

940

GaAs

Clear

1.3

1.5

110

940

GaAs

Clear

1.3

1.5

250

940

GaAs

Clear

1.3

1.5

80

940

GaAs

Transparent light purple Transparent light navy blue Transparent dark navy blue

1.3

1.5

130

940

GaAs

1.3

1.5

180

940

GaAs

1.3

1.5

200

940

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.3

1.5

7

940

GaAs

Clear

1.3

1.5

14

940

GaAs

Clear

1.5

1.8

3

850

GaA As

(Constant voltage) Vcc=3V, R=2.2Ω

IF=50mA

Fig. No.

Outline

Contact mount

Infrared LEDs

28

29

30

31 25


Ultraviolet LEDs Absolute Maximum Ratings Parameter

(Ta=25ºC) Ratings

Unit

Conditions

IF

mA

30

∆I F

mA /ºC

–0.45

I FP

mA

100

f=1kHz, tw=10µs

IR

mA

100

Max. rating of built-in Zener diode

Top

ºC

–30 to +85

Tstg

ºC

–30 to +100

Above 25ºC

Ultraviolet Surface Mount LEDs

2.8 ✕ 3.5

Part No.

SECU1V0AC

typ

max

IV (mcd) typ

3.7

4.0

2.2

Lens color

Clear

VF (V)

Peak wavelength

Condition IF(mA)

λp (nm) typ

20

385

(V) typ

Condition

Chip material

Fig. No.

Electro-optical characteristics (Ta=25ºC) Outline

4000

100pF, 1.5kΩ

InGaN

32

Electrostatic withstand voltage

141


Multi-chip LED Module (under development) Absolute Maximum Ratings Parameter

Ratings

Conditions With an infinite heatsink mounted

IF

mA

40

∆I F

mA /ºC

–0.25

I FP

mA

100

VR

V

5

Topr

ºC

–30 to +85

Tstg

ºC

–30 to +100

f=1kHz, tw=10µs

Colors compliant with JIS-Z9112

Color temperature [°K] 20mA

Total flux [lm] 20mA

Chromaticity x, y 20mA

SEP8WD4001

Cool white

6400

30

0.32, 0.33

SEP8WN4001

Natural white

5000

30

0.34, 0.35

SEP8WE4001

White

4200

30

0.37, 0.37

SEP8WW4001

Warm white

3450

25

0.41, 0.38

SEP8WL4001

Light bulb

2875

25

0.44, 0.41

Part No.

142

(Per element Ta=25ºC)

Unit

Fig. No.

33

General-purpose LEDs - External Dimensions

Cathode

(1.0)

0.8

Anode

1.0min

Resin burr 0.3max

7.7±0.5

23.5min 5.7±0.2

Resin heap 1.5max

5.6±0.2

0.5±0.1

1.1max

0.5

(2.54)

5.0±0.2

Cathode

0.5

Resin heap 1.5max

4.6±0.2

19.0min 0.8

Fig.6

7.6±0.2

4.7±0.2

20.0min 5.0±0.5

2-0.5±0.1

5.6±0.2

(2.54)

Fig.1

0.65max

(Unit: mm)

Fig.2

Resin heap 1.5max 0.4±0.1

(1.5)

0.4±0.1

Resin heap 1.5max

Cathode

Resin heap 0.8max

Fig.9 0.8±0.2 4.0±0.2

0.65max

5.0±0.2

(2.54) Cathode

5.5±0.5 3.5±0.1

Resin heap 0.8max

Fig.10

0.8

1.1max

0.5

0.5±0.1

Resin heap 1.5max

4.0±0.2

23.0min 4.5±0.5 (1.6) 2.5±0.1

Cathode

0.4±0.1

3.5

(2.54)

5.0±0.2

Cathode

1.0min

4.4

3.5

0.65max

8.2 (1.0)

(2.54)

19.0min 0.8

±0.2

0.8

20.0min 5.5

±0.5

±0.2

5.6

±0.2

0.45±0.1

Fig.5

23.0min (1.7)

Cathode

0.4±0.1

9.4±0.3

21.0min

1.0min

1.0min

4.4

3.5

3.1±0.1

Resin heap 0.8max

0.5±0.1 0.65 max

0.5±0.1

Resin burr 0.3max

(2.54)

Anode

0.45±0.1

Fig.4

0.65max

0.45±0.1

4.8 0.65max

0.5±0.1

0.5±0.1

5.0±0.2

24.5min

2.2

(2.54)

Cathode

1.0min

Resin heap 1.5max

(2.54)

(1.0) 6.9±0.2

5.0±0.2

23.0min

1.5

1.1max

4.8

0.65max

0.5±0.1 1.0min

±0.5

0.8

Fig.8 5.6±0.2

6.5

Cathode

Fig.3

5.0±0.2

25.5min

2.2

(2.54) 0.5±0.1

1.0min

4.0±0.2

Cathode

Fig.7

4.0±0.2

(1.0) 7.6±0.2

0.45±0.1

23.0min

(2.54)

1.0min

5.0±0.2

5.6±0.2

Resin heap 0.8max

143


(Unit: mm)

2.6±0.1

25.8min

1.7 (2.54)

3.1±0.1

(1.3)

0.4

Resin heap 0.8max

0.4

±0.1

Resin burr 0.3max Resin heap 1.5max

0.65max

0.45±0.1

0.65max

0.45±0.1

0.4±0.1

Cathode 1.0min

3.5±0.1

(2.54)

4.0±0.2

Cathode

Fig.16

5.5

3.8±0.1

0.8±0.2

23.0min (1.7) Resin burr 0.3max

4.4

1.0min

3.5

3.1±0.1

Fig.11

6.0±0.2

1.0min

5.8±0.5

23.0min

Resin heap 1.5max

Cathode

Cathode mark Resin burr 0.3max Resin heap 0.8max

0.5±0.1

3.1

3.6

6.0±0.2

3.6±0.2

3.9

6.2

0.65max

0.45±0.1

0.4±0.1 Cathode

3.3±0.2

Fig.18

0.5+0.1

4.0±0.1 (1.3)

(5.0)

3.1±0.1

0.5±0.1

Cathode mark Resin burr 0.3max Resin heap 0.8max

0.65max

Cathode 3.6

25.4min

4.2±0.5

23.0min

1.4

0.65max

0.45±0.1

Resin heap 1.5max

(2.54)

1.55 1.0min

3.8

1.0min

6.2

(2.54)

3.8

0.4

Fig.17

0.65max

(1.3)

1.7

Fig.13

3.5±0.1

0.5±0.1

25.8min

(5.0)

Cathode 1.0min

1.4

Fig.12

3.1±0.1

Cathode mark

Fig.20

1.0min 1.5min

144


5.0±0.2

Resin burr 0.3max Resin heap 1.5max 1.2 0.8

20.0min

(2.54) (2.54)

6.2

3.5±0.1

0.65max

Cathode

0.4±0.1 0.45±0.1

(2.54)

0.8±0.2

4.0

±0.2

4.4

(1.7) 2.5±0.1

0.65max

Resin heap 1.5max

4.5

10.6±0.5 1.0 7.6±0.2

3.9

6.0±0.2

23.0min

3 – 0.5±0.1

0.8

1.1max

0.5±0.1 1.0min

3.5

±0.5

3.6


3.3

Fig.15

2.0

0.5±0.1

0.5

(2.54) 0.5

1.0min 1.5min 17.0min ±0.1

0.65max

(1.0) 4.9±0.2

Cathode 19.0min 0.8

Fig.19

5.8±0.2

0.5+0.1

20.0min 5.0±0.5

(2.54) (2.54)

5.6±0.2

5.8±0.2

Fig.14


(Unit: mm)

5.8±0.5 3.9

2.5 1.5

1.0

0.9

1.0

1.5

2.0

3.0

3.6±0.2


Anode 3.1±0.2

0.5±0.1

0.65max

0.5±0.1

6.2 3.6

1.4±0.1 Cathode (0.5) 0.9 0.6±0.1 mark Cathode

Fig.26

(2.54) (2.54)

1.0min 1.5min 20.0min

6.0±0.2

Fig.21

Resin B

P.C.B.

A

Fig.22 SEC4001 P.C.B.

Cathode mark 1.0

Cathode

Resin

MAX 0.1 1.4±0.1 Cathode (0.5) 0.9 0.6±0.1 mark Cathode

1.4

4-R0.35

1.0

1.5

(0.5)

2.0

3.0

0.9

1.5

0.9

1.0

(1.6)

2.5 1.5

(0.6)

2.0 1.5

3.0

2.5

Fig.27

Anode

±0.1

Electrode burr

Anode

Lens 0.8

Resin

P.C.B.

1.8

B

±0.1

0.9

(0.5)

Electrode burr MAX 0.1 0.45

1.6

2.0 1.7 ø1.0

2.53

3.0

A

Cathode

1.3

0.6

1.5

1.4

Cathode mark

Fig.28 5.6±0.2

1.0min

(1.0)

23.0min

A

5.0±0.2

Fig.23 SEC4003

Cathode

Anode 0.5±0.1

Fig.24 1.5

1.4

Cathode mark

0.9

(0.5)

1.3

Dimension A (mm) SID1010CM 7.6±0.2 SID1K10CM SID1010CXM 6.9±0.2 SID1K10CXM


1.6

1.5

2.0

3.0

0.6

Cathode

0.65max

P.C.B.

0.5±0.1

Lens

(2.54)

Resin

0.5±0.1

1.03

P.C.B. Resin

Anode

1.4 0.9

Cathode (0.5)

Anode

1.3 (2.54)

Cathode mark

Lens

Resin

0.5±0.1

Cathode

1.6

1.0

1.7

2.0

3.0

0.6

1.5

21.0min

9.4±0.3

5.0±0.2

Fig.25

1.0min

0.65 max

0.5±0.1

0.5±0.1

Fig.29


P.C.B. Anode

145


(Unit: mm)

Fig.30

Fig.32 8.5±0.5

24.0min

2.0min

A

Anode

Side view 3.5 3.2 (2.7)

1.4 0.2

2.8 (2.4)

Cathode

1.1max 0.85+0.1

0.6±0.1

0.6±0.1

(2.54)

4.8±0.2

5.6

Surface

(0.8)


0.6±0.1

Cathode Mark

Side view

Dimension A (mm) SID303C

3.0±0.5

SID313BP SID1003BQ SID307BR SID1G307C

3.6±0.5

Reverse Side 0.8

Inner circuit ZD

4.2±0.5 2.6

LED Anode

Anode

Fig.31

Cathode

Fig.33 Resin: color White 13.2


8.8 ±0.3 (0.8)

4.4

0.65max

0.4±0.1

0.45±0.1

12 11 10 9

16 15 14 13

(2.54)

ø3.8

0.4

3.5

12.0

10.0

(0.7)

(1.3)

1.7

3.5

4.8

25.8min

5.8

1.0min

±0.1

3.1±0.1

Cathode

Heatsink 1

2.0

2

3

4

5

6

7

8

Mark

0.3 ±0.05

146

Cathode

Resin 0.2 ±0.05 (0.5)

3.0±0.25

P1.0*3=3.0 ±0.25


Part No.

Description

Page

Part No.

Description

Page

Part No.

Description

Page

2SA1488/A

Power transistor

80

SEC2422C

3 x 2.5 Surface Mount 2-Chip LED

139

SEL1513E

5ø Inverted-cone LED for Surface illumination

136

2SA1567

Power transistor

81

SEC2442C


139

SEL1550CM

5ø Round Narrow-directivity LED, Direct mount supported

134

2SA1568

Power transistor

82

SEC2462C


139

SEL1610C

5ø Round Standard LED (With Stopper)

134

2SA1908

Power transistor

83

SEC2484C

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

139

SEL1610W


134

2SB1622

Power transistor

84

SEC2492C


139

SEL1615C

5ø Round Narrow-directivity LED

134

2SC3852

Power transistor

85

SEC2494C


139

SEL1710K


134

2SC4024

Power transistor

86

SEC2552C


139

SEL1710KM

5ø Round Standard LED

134

2SC4065

Power transistor

87

SEC2554C


139

SEL1710Y


134

2SC4153

Power transistor

88

SEC2592C


139

SEL1713K


136

2SD2141

Power transistor

89

SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED

139

SEL1810A


134

2SD2382

Power transistor

90

SEC2764C

139

SEL1810AM


134

2SD2633

Power transistor

91

SEC2774C

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

139

SEL1810D


134

2SK3710

MOS FET

108

SEC4201C

Side-view Surface Mount LED

138

SEL1810DM


134

2SK3711

MOS FET

109

SEC4203C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1813A


136

2SK3724

MOS FET

110

SEC4401C


138

SEL1850AM

134

2SK3800

MOS FET

111

SEC4401E-TG


138

SEL1850DM

5ø Round Narrow-directivity LED, Direct mount supported 5ø Round Narrow-directivity LED, Direct mount supported

2SK3801

MOS FET

112

SEC4403C


138

SEL1910A


134

2SK3803

MOS FET

113

SEC4403E-TG


138

SEL1910AM


134

2SK3851

MOS FET

114

SEC4501C


138

SEL1910D


134

FKV460S

MOS FET

115

SEC4503C


138

SEL1910DM


134

FKV660S

MOS FET

116

SEC4701C


138

SEL1913K


136

FP812

Power transistor

92

SEC4703C


138

SEL1950KM


134

MN611S

Power transistor

93

SEC4801C


138

SEL2110R

3ø Round Type LED

135

MN638S

Power transistor

94

SEC4803C


138

SEL2110S

3ø Round Type LED

135

MP2-202S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4901C


138

SEL2110W

3ø Round Type LED

135

MPL-102S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4903C


138

SEL2210R

3ø Round Type LED

135

PZ628

Power Zener Diode (Surface Mount)

129

SECS1203C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL2210S

3ø Round Type LED

135

SDA03

Power transistor Array (Surface Mount)

96

SECS1803C


138

SEL2210W

3ø Round Type LED

135

SDA04


97

SECS1903C


138

SEL2213C


136

SDC09


98

SECU1D01C

3 x 1.5 Surface Mount LED

138

SEL2215R

3ø Round Type Narrow-directivity LED

136

SDH04

High-side Power Switch IC

24

SECU1E01C


138

SEL2215S


136

SDK06

MOS FET Array ( Surface mount )

117

SECU1V0AC

2.8 x 3.5 Ultraviolet Surface Mount LED

141

SEL2410E

3ø Round Type LED

136

SDK08


118

SECU4E01C


138

SEL2410G

3ø Round Type LED

136

SDK09


119

SEL1110R


134

SEL2413E


136

SEC1101C


138

SEL1110S


134

SEL2413G


136

SEC1201C


138

SEL1110W


134

SEL2415E


136

SEC1203C


138

SEL1210R


134

SEL2415G


136

SEC1401C


138

SEL1210RM


134

SEL2510C

3ø Round Type LED

136

SEC1401E-TG


138

SEL1210S


134

SEL2510G

3ø Round Type LED

136

SEC1403C


138

SEL1210SM


134

SEL2513E


136

SEC1403E-TG


138

SEL1213C


136

SEL2515C


136

SEC1501C


138

SEL1250RM

134

SEL2610C

3ø Round Type LED

135

SEC1503C


138

SEL1250SM


134

SEL2613CS-S


136

SEC1601C


138

SEL1410E


134

SEL2710K

3ø Round Type LED

136

SEC1603C


138

SEL1410EM


134

SEL2710Y

3ø Round Type LED

136

SEC1701C-YG 3 x 1.5 Surface Mount LED

138

SEL1410G


134

SEL2713K


136

SEC1703C


138

SEL1410GM


134

SEL2715K


136

SEC1801C


138

SEL1413E


136

SEL2715Y


136

SEC1803C


138

SEL1450EKM

134

SEL2810A

3ø Round Type LED

135

SEC1901C


138

SEL1450GM-YG


134

SEL2810D

3ø Round Type LED

135

SEC1903C


138

SEL1453CEMKT

4.6 x 5.6ø Egg-shaped LED

134

SEL2813A


136

SEC1E01C


138

SEL1510C


134

SEL2815A


136

SEC1G03C

3 x 1.5 Infrared Surface Mount Inner Lens Type LED

140

SEL1510CM


134

SEL2815D


136

134

147


Part No.

Page

Part No.

Description

Page

Part No.

Description

Page

SEL2910A

3ø Round Type LED

136

SEL6410G

3ø Round Type LED, Direct mount supported

135

SEL2910D

3ø Round Type LED

136

SEL6413E

136

SEL2913K


136

SEL6413E-TG

SEL2915A


136

SEL6414E

SEL2915D


136

SEL6414E-TG

SEL2E10C

3ø Round Type LED

136

SEL6415E

3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

SEL4110R

4ø Round Type LED

134

SEL6510C


135

SEL4110S

4ø Round Type LED

134

SEL6510G


135

Pitch Lead Rectangular LED, SELU5B20C 5mm Direct mount supported Pitch Lead Bow-shaped LED, SELU5E23C 5mm Direct mount supported 3ø Inverted-cone LED for Surface illumination, SELU6213C-S Direct mount supported Round Type Wide-directivity LED, SELU6214C 3ø Direct mount supported 3ø Round Type Wide-directivity LED, SELU6414G-S Direct mount supported Round Type Wide-directivity LED, SELU6614C-S 3ø Direct mount supported 3ø Round Type Wide-directivity LED, SELU6614W-S Direct mount supported Round Type Wide-directivity LED, SELU6714C 3ø Direct mount supported

SEL4114R

135

SEL6513C

136

SELU6910C-S

135

SEL6514C

135

SELU6914C-S

3ø Round Type Wide-directivity LED, Direct mount supported

135

SEL4210R

4ø Round Type LED

134

SEL6515C

3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported


SEL4114S

4ø Round Type Wide-directivity LED, Direct mount supported 4ø Round Type Wide-directivity LED, Direct mount supported

135

SEP8WD4001

Multi-chip LED Module

142

SEL4210S

4ø Round Type LED

134

SEL6710K


135

SEP8WE4001


142

SEL4214R

135

SEL6710Y


135

SEP8WL4001


142

SEL4214S


135

SEL6714K

135

SEP8WN4001


142

SEL4410E

4ø Round Type LED

135

SEL6714W

135

SEP8WW4001


142

SEL4410G

4ø Round Type LED

135

SEL6715C

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

135

SFPB-54

Schottky Barrier Diode(Surface Mount)

130

SEL4414E

135

SEL6810A


135

SFPB-56


130

SEL4414G


135

SEL6810D


135

SFPB-59


130

SEL4510C

4ø Round Type LED

135

SEL6814A


135

SFPB-64


130

SEL4514C


135

SEL6910A


135

SFPB-66


130

SEL4710K

4ø Round Type LED

134

SEL6910D


135

SFPB-69


130

SEL4710Y

4ø Round Type LED

134

SEL6914A

135

SFPB-74


130

SEL4714K

135

SEL6914W

135

SFPB-76


130

SEL4714Y


135

SEL6915A

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

135

SFPE-64


130

SEL4810A

4ø Round Type LED

134

SEL6E10C


135

SFPJ-53


130

SEL4810D

4ø Round Type LED

134

SELS1E10CXM-M

5ø Round Wide-directivity LED

134

SFPJ-63


130

SEL4814A

135

SELS5223C

SFPJ-73


130

135

SELS5923C

136

SFPL-52

Ultrafast Recovery Diode(Surface Mount)

130

SEL4910A

4ø Round Type LED

134

SELS5B23C

136

SFPL-62


130

SEL4910D

4ø Round Type LED

134

SELS6B13W

136

SFPL-64


130

SEL4914A

135

SELS6B14C

135

SFPM-52

Rectifier Diode(Surface Mount)

130

135

SELS6D14C

135

SFPM-54


130

136

SELS6E14C-M

135

SFPM-62


130

136

SELU1210CXM


134

SFPM-64


130

136

SELU1250CM


134

SFPW-56


130

136

SELU1253CMKT

4.6 x 5.6ø Egg-shaped LED

134

SFPZ-68

Power Zener Diode

129

136

SELU1910CXM-S 5ø Round Wide-directivity LED

134

SG-9CNR

Rectifier Diode for Alternator

127

136

SELU1D10CXM


134

SG-9CNS


127

136

SELU1D50CM


134

SG-9CZR


127

136

SELU1E10CXM


134

SG-9CZS


127

136

SELU1E50CM


134

SG-9LCNR


127

136

SELU2215R-S


136

SG-9LCNS


127

136

SELU2610C-S

3ø Round Type LED

135

SG-9LLCNR


127

136

SELU2710C

3ø Round Type LED

136

SG-9LLCNS


127

136

SELU2B10A-S

3ø Round Type LED

135

SG-9LLCZR


127

SEL5E23C

4ø Round Type Wide-directivity LED, Direct mount supported 4ø Round Type Wide-directivity LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported

5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported

136

SEL4814D


136

SELU2D10C

3ø Round Type LED

136

SG-9LLCZS


127

SEL6110R


135

SELU2E10C

3ø Round Type LED

136

SG-10LLR


127

SEL6110S


135

SELU4410CKT-S

4ø Round Type LED

135

SG-10LLS


127

SEL6210R


135

SELU5220C-S

136

SG-10LLXR


127

SEL6210S


135

SELU5620S-S

136

SG-10LLXS


127

SEL6214S

135

SELU5720C

136

SG-10LLZ23R


127

SEL6215S

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

135

SELU5723C

136

SG-10LLZ23S


127

SEL6410E


135

SELU5820C-S

5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported

136

SG-10LR


127

SEL4914D SEL5220S SEL5223S SEL5420E SEL5423E SEL5520C SEL5523C SEL5620C SEL5723C SEL5820A SEL5823A SEL5920A SEL5923A SEL5E20C

148

Description

136 135 135 135

136

135

136 136 135 135 135 135 135


Part No.

Description

Page

Part No.

Description

Page

SG-10LS


127

SML1516W

5ø Round Standard Bicolor LED

137

SG-10LXR


127

SML1816W


137

SG-10LXS


127

SML19416W


137

SG-10LZ23R


127

SML72420C

3.3 x 6 Rectangular Type Bicolor LED

137

SG-10LZ23S


127

SML72423C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SG-14LXZS


127

SML72923C


137

SG-14LXZS


127

SML78420C


137

SHV-01JN

High-Voltage Rectifier Diode for Ignition Coil

128

SML78423C


137

SHV-05J


128

SML79420C


137

SHV-06JN


128

SML79423C


137

SI-3001S

Linear Regulator IC

8

SMLS79723C


137

SI-3003S

Linear Regulator IC

10

SMLU12D16W 5ø Round Standard Bicolor LED

137

SI-3101S

Linear Regulator IC

12

SMLU12E16C


137

SI-3102S

Linear Regulator IC

14

SMLU12E16W


137

SI-3201S

Switching Regulator IC

22

SMLU18D16C


137

SI-3322S

System Regulator IC

16

SMLU18D16W-S


137

SI-5151S


26

SMLU72423C-S


137

SI-5152S


28

SMLU79423C-S


137

SI-5153S


30

SPF0001


100

SI-5154S


32

SPF3004

System Regulator IC

18

SI-5155S


34

SPF3006

System Regulator IC

20

SI-5300

Full-bridge Motor Driver IC

60

SPF5002A

Low-side Power Switch IC

50

SID1003BQ

5ø Round Infrade LED

140

SPF5003


40

SID1010CM


140

SPF5004


42

SID1010CXM


140

SPF5007


44

SID1050CM

5ø Round Infrade LED, Direct mount supported

140

SPF5009


52

SID1G307C


140

SPF5012


54

SID1G313C


140

SPF5017


46

SID1K10CM


140

SPF5018


48

SID1K10CXM


140

SPF7211

Stepper-motor Driver IC

58

SID2010C


140

SPF7301

Full-bridge Motor Driver IC

62

SID2K10C


140

SSD103

Power transistor

95

SID303C


140

STA315A

Power transistor Array

101

SID307BR


140

STA335A


102

SID313BP


140

STA415A


103

SJPZ-E18


129

STA460C


104

SJPZ-E27


129

STA461C


105

SJPZ-E33


129

STA463C


106

SJPZ-E36


129

STA464C


107

SJPZ-K28


129

STA508A

MOS FET Array

123

SLA2402M

High Voltage Driver IC for HID Lamps

64

STA509A

MOS FET Array

124

SLA2403M


68

SZ-10N27


129

SLA2501M


36

SZ-10N40


129

SLA2502M


38

SZ-10NN27


129

SLA4708M

Stepper-motor Driver IC

56

SZ-10NN40


129

SLA5027

MOS FET Array

120

TFC561D

125

SLA5098

MOS FET Array

121

TFC562D

3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition

SLA8004


99

SMA2409M


72

SMA5113

MOS FET Array

122

SML11516C


137

SML1216C


137

SML1216W


137

126

149

•http://www.sanken-ele.co.jp SANKEN ELECTRIC CO.,LTD.

ISO 9001/14001 Certified

Sanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards.

1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments

Overseas Sales Offices ●Asia Singapore

●North America

Sanken Electric Singapore Pte. Ltd.

115 Northeast Cutoff, Worcester, MA 01606 General Information Tel: 1-508-853-5000 Fax: 1-508-853-3353

150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore Tel: 65-6291-4755 Fax: 65-6297-1744

China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494

Allegro MicroSystems, Inc.

●Europe Sanken Power Systems (UK) Ltd. Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K. Tel: 44-1443-742-333 Fax: 44-1443-743-354

Sanken Electric (Shanghai) Co., Ltd. Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757

Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145

Taiwan Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261

The information contained in this document is correct as of July 2006. •This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security. Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.

This document uses 100% recycled paper.

H1-C01ED0-0607020TA}}

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