143827062-datashet-automotriz.pdf

SANKEN SANK EN ELEC ELECTRIC TRIC CO. CO.,L ,LTD TD..

CAUTION CAUTION / WAR NING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. • Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. • When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. • Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. • Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested. • The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. • Anti radioactive ray design is not considered for the products listed herein. • This publication shall not be reproduced in whole or in part without prior written approval from Sanken. • Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.

Contents Examples of Use of Typical Products by Application

.............. 2

1 ICs 1-1. 1-1. Regula Regulator tor ICs ................................................................................ 7

Application Note

Dropper Type Regulator ICs

......................................................... 8

Dropper Type System Regulator ICs Switching Type Regulator ICs

...................................... 16

................................................... 22

1-2. 1-2. Power Power Switc Switch h ICs High-side Power Switch ICs

...................................................... 24

Low-side Switch ICs

...................................................... 50

1-3. 1-3. Motor Motor Drive Driverr ICs Stepper-motor Driver ICs

...................................................................... 60

DC Motor Driver ICs

..................................................................... 64

1-4. 1-4. HID Lamp Lamp Driv Driver er ICs ICs 1-5. 1-5. Cust Custom om ICs ICs

............................................................ 56

....................................................................................... 76

2 Discretes 2-1. 2-1. Transi Transisto stors rs 2-1-1. Transistors

............................................................................ 80

2-1-2. Transistor Arrays

............................................................... 96

2-2. 2-2. MOS MOS FETs FETs 2-2-1. MOS FETs

......................................................................... 108

2-2-2. MOS FET Arrays

............................................................. 117

2-3. 2-3. Thyris Thyristor tors s 2-3-1. Reverse Conducting Thyristors

.............................. 125

2-4. 2-4. Diod Diodes es 2-4-1. Alternator Diodes

........................................................... 127

2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes

................................ 128

..................................................... 129

2-4-4. General-purpose Diodes

............................................ 130

3 LEDs 3-1. 3-1. Uni-Co Uni-Color lor LED LED Lamps Lamps

................................................................ 134

3-2. 3-2. Bi-Co Bi-Color lor LED LED Lamps Lamps

.................................................................. 137

3-3. 3-3. Surfac Surface e Mount Mount LEDs LEDs

.................................................................. 138

3-4. 3-4. Infrar Infrared ed LEDs LEDs .................................................................................. 140 3-5. 3-5. Ultrav Ultraviol iolet et LEDs LEDs

............................................................................ 141

3-6. 3-6. Multi-c Multi-chip hip Modules Modules

.................................................................... 142

Part Number Index in Alphanumeric Order

......................................... 147

1

Examples of Use of Typical Products by Application Throttle System Motor Driver ICs (p.60 and after) •DC Control IC and full bridge power stage in a single package. Surface-mounting type series are also available.

SI-5300 / SPF7301

Driver Transistor Arrays (p.99) •Motor H-bridge of NPN x 2 and PNP x 2 in a single package. With integrated back emf. clamp diode.

Alternators

SLA8004

driver power transistors (p.68 and after) •Motor With integrated back emf. clamp diode.

(p.127) •Diodes Solder and press fit type as well as Zener type is available.

2SA1568 / 2SC4065

SG-9 / SG-10 / SG-14

ICs •Regulator Custom-made (contact our sales reps.)

Fuel Injectors transistors (p.84 and after) •Injector Transistors and MOS FETs are available in discretes and arrays in various packages.

2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103

Headlamps lamp driver ICs (p.64 and after) •HID High-voltage controller IC and 4-circuit power stage in a single package. Direct drive from CPU.

SLA2402M / SLA2403M / SMA2409M

for HID lamp ignition (p.125 and after) •Thyristors Best suited to C-discharge SW element on high-voltage primary side of an igniter. Integrates a reverse direction diode. High di/dt resistance

TFC561D / TFC562D

FET arrays for driving HID lamps (p.122) •MOS 4 circuits of N-ch MOS FETs of 450V/7A in a single package. SMA5113

•Low output saturation voltage, integrated recovery diode,

2-ph stepper-motor driver ICs for AFS (p.58 and after) surface-mount.

SPF7211

2

Ignition System diodes for ignition (p.128) •High-voltage Withstand voltage range: 0.5 to 15kV SHV-01JN / SHV-05J / SHV-06JN

transistors (p.89 and after) •Ignition 2SD2141 / MN638S ICs •Ignition Custom-made (contact our sales reps.)

Room Lamp

•Multi-chip LED modules (p.142) Car Navigation and Audio Power Steering

• Various LEDs (p.133)

Motor driver MOS FETs (p.108 and after) • Various packages integrating low ON resistors, bidirectional Zener diodes, etc.

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851

Tail Lamps LED •Power Custom-made (contact our sales reps.)

O2 sensor heater driver MOS FETs (p.115) •Heater Low ON resistor and integral gate protection diode.

FKV460S

Transmission solenoid drivers (high-side power switch ICs) (p.26 and after) • AT Integral diagnostic function, surface-mount, 2- and 3-circuit types and other diverse models.

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M AT linear solenoid driver (high-side power switch ICs) (p.46 and after)

•Integral current detection resistor, current monitor output, surface-mount and

ABS and VDC Solenoid/motor driver MOS FETs (p.108 and after) • Various packages from discretes to arrays. 2SK3710 / FKV660S / SLA5027 / SDK08 Solenoid/motor driver ICs (p.54)

•Surface-mount 4-circuit type with output voltage monitor. SPF5012

2-circuit types are also available.

SPF5017 / SPF5018 3

4

1 ICs 1-1. Regulator ICs

1-3. Motor Driver ICs

..............................................

7

....................

8

SLA4708M ( 50V, 1.5A)

SI-3001S ( 5V/1A, With Output ON/OFF Control) ... 8

SI-3003S (5V/0.8A, 3-terminal)

SI-3101S ( 5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12

SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14

Application Note


.......................

.........................

56

...................................

56

SPF7211 (40V, 0.8A)

.....................................

58

DC Motor Driver ICs

....................................

60

SI-5300 ( 40V, 5A)

.....................................

60

SPF7301 ( 36V, 7A)

.....................................

62

Stepper-motor Driver ICs

10

Dropper Type System Regulator ICs .. 16

SI-3322S (5V, Surface-mount) ........................ 16

1-4. HID Lamp Driver ICs

SPF3004 ( 5V/0.4A, 3.3V/0.2A, Surface-mount 2-output)

..................................

64

....................................

68

SLA2402M ( 500V, 15A)

SPF3006 ( 5V/0.4A, 5V/0.2A, Surface-mount 2-output)

20

SLA2403M ( 500V, 7A)

...............

22

SMA2409M ( 500V, 7A) ................................... 72

............................................

22

Switching Type Regulator ICs

18

SI-3201S ( 5V/3A)

1-5. Custom ICs

.....................................

76

1-2. Power Switch ICs High-side Power Switch ICs

...................

24

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SI-5151S ( With Diagnostic Function) .............. 26


SI-5153S ( With Diagnostic Function, Built-in Zener Diode) 30

SI-5154S ( With Diagnostic Function, Built-in Zener Diode) 32


SLA2501M (With Diagnostic Function, 3-circuits) 36

SLA2502M (With Diagnostic Function, 4-circuits) 38

SPF5003 ( With Diagnostic Function, Surface-mount 2-circuits) 40



SPF5017 ( Surface-mount 2-circuit, current monitor output function)

SPF5018 ( Surface-mount, current monitor output function) 48 Low-side Switch ICs

46

...................................

50

..........

50

SPF5002A ( Surface-mount 4-circuits)


SPF5012 (Surface-mount 4-circuits with Output Monitor) 54

5

6

Application Note for Regulator ICs ■ Temperature

and Reliability

Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high opera ting tempe rature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation.

generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments. ■ Setting

Observe the following precautions when setting the DC input voltage: • V IN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. • V IN (max) must not exceed the DC input voltage of the electrical characteristics. ■ Screw

■ Power

Dissipation (PD )

1. Dropper Type PD = IO • [V IN (mean) - V O] V O PD = V O • I O ( 100 - 1) - V F • I O (1 ) V IN Efficiency depends on input/output conditions. Refer to the efficiency characteristics.

V IN : Input voltage

: Efficiency

Screw torque should be between 0.588 to 0.686 [N • m] (6.0 to 7.0 [kgf • cm]).

silicone grease

Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.

V F : Diode forward voltage

IO : Output current

■ Heatsink

Torque

■ Recommended

2. Switching Type

V O : Output voltage

DC Input Voltage

Design

The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation PD (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is

Type

Suppliers

G746

Shin-Etsu Chemical Co., Ltd.

YG6260

GE Toshiba Silicones Co., Ltd.

SC102

Dow Corning Toray Silicone Co., Ltd.

■ Others

This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage.

7

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Features

External Dimensions (unit: mm)

● Output current of 1.0A ● 5-terminal type ● Voltage accuracy of ±2% ● Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A ● Built-in overcurrent, overvoltage and thermal prot ection circuits ● Withstands external electromagnetic noises ● TO220 equivalent full-mold package

3.2 ±0.2

4.2 ±0.2

10.0±0.2

2.8 ±0.2

5 . 0 2 . 0

±

0 . 2 4 . 0

±

9 . 7 3 . 0

±

9 . 6 1 ) 9 . 7 1 (

a

2.6 ±0.1

b

) 0 . 2 (

Absolute Maximum Ratings Parameter DC Input Voltage Output Control Terminal Voltage

Output Current

(Ta=25ºC)

Symbol

Ratings

Unit

V IN

35

V

V C

V IN

+0.2

Conditions

0.85 –0.1

1.0 *

V 1

P1.7±0.7•4=6.8±0.7

18

W

With infinite heatsink

PD2

1.5

W

Stand-alone without heatsink

ºC

Operating Temperature

TOP

– 40 to +100

ºC

Storage Temperature

Tstg

– 40 to +125

ºC

j-c

5.5

ºC/W

j-a

66.7

ºC/W

Junction to Ambient-Air Thermal Resistance

2

3

4

1. GND 2. V C (on/off) 3. V o 4. V osense 5. V IN

5


Equivalent Circuit Diagram Tr 1

Symbol

Input Voltage

V IN

Output Voltage

V O

Dropout Voltage

MIC

4 V O sense

(Tj= 25ºC, V IN =14V unless otherwise specified) a

Ratings min

typ

6 *2 4.90

5.00

R3

max

Unit

Conditions e

d

30 *1

V

5.10

V

2

V IN =12 to 16V, I O =0.4A

0.5

V

IO

0.4A

1.0

V

IO

1.0A

f R4

b g

c

Vc (on/off)

R2

V DIF

Line Regulation

∆ V O LINE

30

mV

Load Regulation

∆ V O LOAD

100

mV

Output Voltage Temperature Coefficient Ripple Rejection Quiescent Circuit Current Overcurrent Protection Starting Current

∆ V O / ∆T

±0.5

mV/ºC

RREJ

54

dB

Iq

3

I S1

Output ON l a Control Voltage n i Output OFF m r e T Output ON c V Control Current

V C, IH

Output OFF

10

IO =0 to 0.4A

e : Drive circuit f : Error amplifier g : Reference voltage

IO =5mA, Ta= –10 to +100ºC f =100 to 120Hz

mA

Standard Circuit Diagram

IO =0A D1

3 1.2 *

A

4

V

2.0 *

1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection

IO =0.4A, V IN =6 to 16V

5 OPEN

V C, IL

0.8

V

I C, IH

20

µ A

V C =2.7V

I C, IL

–0.3

mA

V C =0.4V

V IN

SI-3001S

2

DC input +

Notes: *1. Since PD ( max ) = (V IN –V O ) • IO =18(W), V IN ( max ) and IO ( max ) may be limited depending on operating conditions. Refer to the Ta-PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage V O (V IN = 14V, Io = 0.4A) drops to – 5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible.

8

3 V O

R1

Electrical Characteristics

a: Part No. b: Lot No.

(Forming No. 1101)

5 V IN

Parameter

(4.3)

8.2 ±0.7

PD1

– 40 to +125

Resistance

) 0 . 8 (

3.9 ±0.7

A

Tj

Junction to Case Thermal

) 6 . 4 ( +0.2 –0.1

1

Junction Temperature

0 . 5

0.45

IO

Power Dissipation

6 . 0 ±

0.95±0.15

C1

C2

3 4

1

+

CO

DC output

V O

Co : Output capacitor (47 to 100 µF, 50V) C1, C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33 µF). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

[With Output ON/OFF Control]


SI-3001S

Electrical Characteristics ■ Io vs V DIF Characteristicsc

■ Line Regulation

0.5

5.1

5.1

) 0.4 V ( V e 0.3 g a t l o v t u 0.2 o p o r D

O

V e 5.0 g a t l o v t u p t u O

0.1

V IN =

IO = 0 (A) 0.4 (A) 1.0 (A)

) V (

F I D

0

■ Load Regulation

O

V e 5.0 g a t l o v t u p t u O

4.9

0

0.5

0

1.0

4.9

0

5

10

Output current IO (A)

15

20

25

12(V)

16(V)

14(V) 5.5(V)

Io = 0 (A)

--50

0

50

100

V e g a t l o v t u p t u O

Load resistance

5 4 3

12 ( Ω ) 2 5 ( Ω )

1 0

150

0

2

Ambient temperature Ta (ºC)

4

6

4 3 2 1

ON

) V (

30 (V)

4 3

O


5.5 (V) 20 (V)

2 14 (V)

0

1

2

3

4

0

5

0.5

1.0

Output ON/OFF control voltage V C (V)

1.5

2.0

2.5

3.0


■ Overvoltage Protection Characteristics

20

Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.


5

10

Io = 0 (A) V IN = 6 (V)

4 3 2

0 0 125

130

135

140

145

150

155


■ Ta—PD Characteristics

6

8

1

0

0

6

5 10 (V)

1

OFF

4

6

5 ) V ( O V e g a t l o v t u p t u O

2

■ Thermal Protection Characteristics

I o = 0 (A) V IN = 14 (V)

5


0

Input voltage VIN (V)

■ Overcurrent Protection Characteristics

) V (

O

0

10

6

6

) V (

8

Input voltage V IN (V)

■ ON/OFF Control Characteristics

O

) A m ( q 10 l t n e r r u c t n e c 5 s e i u Q

O

V IN —I OUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A)

4.9 0

) V (

V IN = 30(V)

1.0

15

6

V e g 5.0 a t l o v t u p t u O

0.5

■ Quiescent Circuit Current

7

O

0


■ Rise Characteristics

5.1


0

30


■ Output Voltage Temperature Characteristics

) V (

30 (V) 12 to 16 (V ) 5.5 (V)

) V (

Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

) W ( 15 D

200•200•2mm (2.3ºC/W) P n o i t a 10 100•100•2mm (5.2ºC/W) p i s s 75•75•2 mm (7.6ºC/W) i D r e w 5 o P

4 3 2 1

Without heatsink

0 10

20

30

40


50

0 --30 –20

0

20

40

60

80

100

Operating temperature Ta (ºC)

9

Dropper Type Regulator ICs [3-terminal] SI-3003S

Features

External Dimensions

IC regulator with 0.8A output current accuracy of ± 2% ● Low Dropout voltage 0.5V at IO 0.5A, 1V at I O 0.8A ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent full-mold package

(unit: mm)

● 3-terminal

4.2±0.2

● Voltage

3.2 ±0.2

2.8 ±0.2

10 ±0.2

2 . 5 2 . . 0 0 ± 4 0 ±

9 . 7

3 . 0 ±

9 . 6 1

a

Absolute Maximum Ratings Parameter DC input voltage Output current Power Dissipation

Symbol

Ratings

Unit

V IN

35

V

2 0.8 *

A

22

W

With infinite heatsink Stand-alone without heatsink

IO PD1 PD2

1.8

W

Tj

–40 to +150

ºC

Operating temperature

TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

j-c

5.5

ºC/W

j-a

66.7

ºC/W

Junction temperature

Junction to case thermal resistance Junction to ambient-air thermal resistance

Electrical Characteristics Parameter

Symbol

Ratings typ

6* 2

max 30 * 1

V O

Dropout voltage

V DIF 1.0

V

Line regulation

V O LINE

30

mV

V IN =8 to 16V

Load regulation

V O LOAD

100

mV

IO =0 to 0.5A

Ripple rejection

RREJ

54

Iq

3

10

mA

Overcurrent protection starting current

IS1

0.9 *

3

0.5

V

Equivalent Circuit Diagram

V IN

V O 5

1 OCP

IO 0.5A

E V I R D

TSD

IO 0.8A

dB

A

(Forming No. 1115)

Conditions

V V

Terminal connections 1. V IN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. V O


Unit

5.10

+0.2

0.45 –0.1

4•P1.7±0.15 =6.8 ±0.15

1 2 3 4 5

Output voltage

5.00

+0.2

0.85 –0.1

(root dimensions)

V IN

4.90

0.94±0.15

) 5 . 3 1 (

(Tj=25ºC, V IN=14V, I O =0.5A unless otherwise specified)

min

2.6±0.15

Conditions

Input voltage

Quiescent circuit current

x a m 2

b

(Ta=25ºC)

DET ERR REF

f=100 to 120Hz

IO =0A

3 GND

Notes: *1. Since P D (max) = (V IN –V O ) • IO =22(W), V IN (max) and IO (max) may be l imited depending on operating conditions. Refer to the Ta—P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage V O (V IN=14V, I O=0.5A) drops to –5%.

Standard Circuit Diagram D1 *2

1 DC input +

V IN

*1 C1

C2

N.C

2

SI-3003S 3

5 4

N.C +

CO

DC output

V O

Co : Output capacitor (47 to 100µF, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47µF, C2: approx. 0.33 µF). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

10

Dropper Type Regulator ICs [3-terminal] SI-3003S

Electrical Characteristics ■ Io vs V DIF Characteristics

■ Line Regulation 5.1

5.1

) V ( O V 5.0 e g a t l o v t u p t u O 4.9

) V ( O V 5.0 e g a t l o v t u p t u O 4.9

0.5

) V (

■ Load Regulation

0.4

F I D

V 0.3 e g a t l o v t 0.2 u o p o r D

IO =0A =0.2A =0.5A =0.8A

IO=0.5, 0.8A =0.2A =0A

V IN =35V =25V =14V =6V

0.1

0

0

0.2

0.4

0.6

0

0.8

0

5

10

15

20

25

30

0

35

■ Output Voltage Temperature Characteristics

5 O


200

) A m ( g l 150 t n e r r u c d 100 n u o r G

4 3 2

0

50

100

0

150

0


6

8

O

V IN =6V 14V

0.5

1.0

1.5


20

25

30

35

With silicone grease Heatsink: aluminum

) 20 200 •200 •2mm W ( D

4

(2.3ºC/W)

P n 15 o i 100 •100 •2mm t a (5.2ºC/W) p i s s 10 i D r 75 •75 •2mm e w (7.6ºC/W) o P 5 Without heatsink

25V

0

15


1

35V

10

25

V e g a 3 t l o v t u p 2 t u O

3

1

5


5 ) V (

2

0


V IN =6V IO =5mA

4

0

0

10

6

5 O

4


6


2



) V (

IO =0.8A =0.5A =0.2A =0A

50

1 4.9 –50

0.8

250 IO =0A =0.5A =0.8A

) V (

V IN / IO: 30V / 0A 14V /0.5A 6V /0.8A

0.6

■ Circuit Current

6

O

0.4



5.1

V e g a t l 5.0 o v t u p t u O

0.2



) V (

0

2.0

2.5

0 120

140

160

180

200


0 –40

0

40

80

100


Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

11

Dropper Type Regulator ICs [2-output] SI-3101S

External Dimensions

Features ● Single

input dual output _{output can be externally turned ON/OFF (with ignition switch, etc.) ● Low standby current ( 0.8mA) ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent 5-terminal full-mold package

(unit: mm)

3.2 ±0.2

● Main

4.2 ±0.2

10.0 ±0.2

2.8 ±0.2

5 . 0 2 . 0 ±

0 . 2 . 4 0 ±

9 . 7 3 . 0 ±

9 . 6 1

a 2.6 ±0.1

b

) 0 . 2 (

) 9 . 7 1 (

6 . 0 ±

Absolute Maximum Ratings Parameter

0 . 5

0.95 ±0.15

(Ta=25ºC)

Symbol

Ratings

Unit

+0.2 0.85 –0.1

) 6 . 4 (

Conditions

) 0 . 8 (

+0.2 –0.1

DC input voltage

V IN

Battery reverse connection

V INB

Output control terminal voltage

V C

CH1 Output current CH2 Power Dissipation

40 –13 *

V 6

V

V IN

IO1

0.07 *

IO2

0.4 *

1

PD1

18

W

With infinite heatsink Stand-alone without heatsink

(Forming No. 1101)

1

A

1.5

W ºC


TOP

–40 to +115

ºC

Storage temperature

Tstg

–40 to +125

ºC

j-c

5.5

ºC/W

j-a

66.7

ºC/W

resistance

(4.3) 8.2 ±0.7

1. V IN 2. V C (on/off) 3. GND 4. V O1 5. V O2

–40 to +125

Junction to ambient-air thermal

3.9

A

Tj

Junction to case thermal resistance

P1.7±0.7 • 4 = 6.8±0.7

One minute

V 1

PD2 Junction Temperature

0.45

2

3

4

5


Equivalent Circuit Diagram Stand-alone without heatsink

V O1

V IN 1

4

OCP TSD


Symbol V IN

Input voltage Output voltage

Dropout voltage

Line regulation

min

typ

6 *2

max

Unit V

OVP

5.20

V

IO =0.05A

CH2

V O2

4.80

5.00

5.20

V

IO =0.3A

V DIF1

V O2

5.00

CH1

5

OCP

35 * 1

4.80

–0.1

REF

Conditions

V O1

V O

DET ERR

(Tj=25ºC, V IN=14V unless otherwise specified) Ratings

CH1

Channel-channel voltage difference (VO1 — VO2 )

E V I R D

0.1

V

1.0

V

IO1 =0 to 0.05A

E V I R D

DET ERR

3

2 V C

GND

CONT

IO2 =0 to 0.3A IO1 0.05A IO2 0.4A

CH2

V DIF2

1.0

V

CH1

V O LINE1

10

30

mV

V IN=6 to 18V, I O =0.05A

CH2

V O LINE2

10

30

mV

V IN=6 to 18V, I O =0.3A

CH1

V O LOAD1

30

70

mV

IO1=0 to 0.05A

CH2

V O LOAD2

40

70

mV

IO2=0 to 0.3A

Standard Circuit Diagram D3

Load regulation

D2

V IN

Ripple rejection

CH1

RREJ1

54

dB

f=100 to 120Hz

CH2

RREJ2

54

dB

f=100 to 120Hz

Overcurrent protection starting current Output control voltage

Output control current

Iq

0.8

mA

+

IO1=0A, V C =0V

3

4 V O1

CIN

3

A

A

+

GND CO1

I (S1) 1

0.1 *

CH2

I (S1) 2

0.5 * 3

Output ON

V CH

4.2

4.5

4.8

V

CO1 :

Output capacitor (47 to 100µF, 50V)

Output OFF

V CL

3.2

3.5

3.8

V

CO2 :


*1 CIN :

I npu t cap aci to rs (ap pr ox. 47µF).

Output ON

I CH

Output OFF

I CL

voltage

Thermal protection starting

V OVP

100 –100 35 *

4

µ A

V C=4.8V

µ A

V C =3.2V

130 * 5

CO2

Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. Required as protection against reverse biasing between input and output.

TTSD

+

*2 D1, D2, D3 : Protection diode. V

ºC

Notes: *1. Since P D (max) = (V IN – V O ) • I O1 + (V IN –V O2 ) • IO2 = 18 (W), V IN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage V O1 or V O2 (V IN =14V, I O1 =0.05A or I O2 =0.3A) drops to –5%. *4. Overvoltage protection circuit is built only in CH2 (V O2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except V IN and GND, are open.

12

V C

CH1

Overvoltage protection starting

temperature

SI-3101S

D1 2


V O2 5

1

(Recommended diode: Sanken EU2Z.)


Electrical Characteristics ■ Line Regulation (1)

■ Line Regulation (2)

5.1

■ Load Regulation (1)

5.1

I O1 = 0mA

) V ( O V e g 5.0 a t l o v t u p t u O

70mA

4.9

V C = 5 (V) IO2 = 0 (A)

IO2 =


50mA

5.1

V C = 5 (V) I O1 = 0 (A)

V C = 5 (V) IO2 = 0 (A)


0A 0.3A 0.5A

5

10

15

20

0 0

25

5


10

15

20

0

25

0

10



20

30

40

50

60

70

Output current IO (mA)


5.1

22V

4.9

4.9

0 0

V IN = 6V 14V


6 V C = 5 (V) I O1= 0 (A)


10 5 ) V ( O V e g a t l o v t u p t u O

V IN = 6V,14V 22V

) A m ( q l t n e r r u c t n e c s e i u Q

Load resistor 100Ω

4

∞

3 2

71.4Ω

1

I O1 = 0 (A) V c = 0 (V)

5

4.9 0

0

0.1

0.2

0.3

0.4

0.5

0

0.6

0


5

5

4

VIN = 14V, 22V

1 O


6V

3 2 OFF

1

2

3

ON

4

5

4 IO2 = 0 (A) V C = 5 (V)

3

10

5 2 O


4.5V

4 3 2 1

0

0.05

0.1

0

0.15

0

0.1

0.2 0.3 0.4

20

V IN = 6 (V) IO1= I O2 = 5 (mA)

With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum


5

4

O


3 2

V O1

4 IO1 = I O2 = 5 (mA) V C = 5 (V)

3

0.6 0.7 0.8


6

) V (

0.5



5

20

V IN = 6V 14V 22V

IO1 = 0 (A) V C = 5 (V)


) V (

15

4.5V

) V (

2

0

6

■ Thermal Protection Characteristics 6

5

■ Overcurrent Protection Characteristics (2)

1

0

0


VIN = 6V 14V 22V


1 O

0

10

6

) V (

1


8

6

) V (

0

6


6


4


■ ON/OFF Control Characteristics

2 O

2

V O2

2

) W 15 ( D

200 • 200 • 2mm (2.3 ºC/ W) P n o i t a 10 100 • 100 • 2mm (5.2 ºC/ W) p i s s 75 •75 • 2mm (7.6ºC/W) i D r e w 5 o P

1

1

Without heatsink

0

0 0

130

140

150

160

Ambient temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

10

20

30


40

0 --30 --20

0

20

40

60

80

100 115


13


External Dimensions

Features input dual output _{output can be externally turned ON/OFF (with ignition switch, etc.) ● Low standby current ( 0.8mA) ● Low dropout voltage 1V ● Built-in dropping type overcurrent, overvoltage and thermal protection circuits ● TO220 equivalent 5-terminal full-mold miniature package

(unit: mm)

● Single

3.2 ±0.2

● Main

4.2 ±0.2

10.0 ±0.2

2.8 ±0.2

5 . 0 2 . 0 ±

0 . 2 . 4 0 ± 9 . 7 3 . 0 ±

9 . 6 1

) 9 . 7 1 (

a

2.6 ±0.1

b

6 . 0

Absolute Maximum Ratings Parameter DC input voltage

) 0 . 2 ( ±

(Ta=25ºC)

Symbol

Ratings

Unit

V IN

35

V

0 . 5

0.95 ±0.15

Conditions

) 6 . 4 (

+0.2 0.85 –0.1

) 0 . 8 (

+0.2 –0.1

0.45

Battery reverse connection

V INB

Output control terminal voltage

V C

CH1

IO1

Output current CH2

–13 * 6

V

V IN

V

0.04 * 1 0.1 *

IO2

One minute

A

1

22

W


PD2

1.8

W


Tj

–40 to +150

ºC


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

j-c

5.5

ºC/W

j-a

66.7

ºC/W


1. V IN 2. V C (on/off) 3. GND 4. V O1 5. V O2

A

PD1


(4.3)

8.2 ±0.7

1

Power Dissipation

3.9 ±0.7

P1.7 ±0.7 • 4 =6.8 ±0.7

2

3

4

5


(Forming No. 1101)

Equivalent Circuit Diagram Stand-alone without heatsink

V O1

V IN 1

4

OCP


Symbol

Input voltage CH1

TSD

(Tj =25ºC, V IN =14V unless otherwise specified) Ratings min

V IN

6*

V O1

4.80

typ

max 30 *

2

5.00

1

5.20

Unit

Channel-channel voltage difference (VO1— VO2 ) Dropout voltage

V O2 V O

4.80

5.00

–0.1

5.20 0.1

DET ERR

Conditions

V

REF

5 V O2

V

IO =0.04A

OCP

Output voltage CH2

E V I R D

V

OVP

IO =0.1A

V

E V I R D

DET ERR

IO1 =0 to 0.04A IO2 =0 to 0.1A

CH1

V DIF1

1.0

V

IO1 0.04A

CH2

V DIF2

1.0

V

IO2 0.1A

CH1

V O LINE1

10

50

mV

V IN =6 to 30V, I O =0.04A

CH2

V O LINE2

10

50

mV

V IN =6 to 30V, I O =0.1A

CH1

V O LOAD1

30

70

mV

IO1 =0 to 0.04A

CH2

V O LOAD2

40

70

mV

IO2 =0 to 0.1A

CH1

RREJ1

54

CH2

RREJ2

54

3

2 V C

GND

CONT

Line regulation

Load regulation

Ripple rejection



Iq

0.8

dB

f =100 to 120Hz

dB

f =100 to 120Hz

mA

IO1 =0A, V C =0V

CH1

I (S1) 1

0.06 *

3

A

CH2

I (S1) 2

0.15 *

3

A

Output ON

V CH

4.2

4.5

4.8

V

Output OFF

V CL

3.2

3.5

3.8

V

Standard Circuit Diagram D3 D2

V IN

Output control voltage

SI-3102S

D1 2 V C

Output control current

Output ON

I CH

Output OFF

I CL

Overvoltage protection starting voltage

Thermal protection starting temperature

V OVP

TTSD

100 –100

µ A

V C =4.8V

µ A

V C =3.2V

30 * 4

V

5

ºC

151*

Notes: *1. Since P D (max) = (V IN – V O ) • I O1 + (V IN –V O2 ) • IO2 = 22 (W), V IN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta—PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage V O1 or V O2 (V IN = 14V, IO1 = 0.04A or I O2 = 0.1A) drops to –5%. *4. Overvoltage protection circuit is built only in CH2 (V O2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except V IN and GND, are open.

14

V O2 5

1

+

3

4 V O1

+

GND

CIN

C O1

CO1 :


CO2 :


*1 CIN :

In pu t ca paci to rs ( app ro x. 47µF).

+ CO2

Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)


Electrical Characteristics ■ Line Regulation (1)

■ Line Regulation (2)

5.10


5.10

5.10

V IN =V C IO2 =5mA

V IN =V C IO1 =5mA

5.05

5.05

) V ( O V 5.00 e g a t l o v t 4.95 u p t u O

) V ( O V 5.00 e g a t l o v t 4.95 u p t u O

IO1 = 0A 20mA 40mA

4.90

4.85

V IN =V C

5.05 ) V ( O V 5.00 e g a t l o v t 4.95 u p t u O

IO2 = 0A 50mA 100mA

4.90

0

5

10

15

20

25

30

4.85

35

V IN = 6V 14V 30V

4.90

0

5


10

15

20

25

30

4.85 0

35

10



30

6

12 V C =0V IO1 =0A

5

5.05

O


30V

4.90

4.85

4 IO1 =0A 20mA 40mA

3 2 1

0

20

40

60

80

0

100

0

1

4

5

6

1 O

4


OFF ON

2

0

1

2

3

4

5

10

5

2 O


V IN = 6V 14V 30V

3 2

0

20

40

60

80

100

120

4 V IN = 6V 14V 30V

3 2

0

0

0.1

4 3 2 1

0.2

0.3

0.4

0.5

Output current IO2 (A)

■ Ta—PD Characteristics 25

V IN =V C IO2 =5mA



35

1

6

5 ) V (

30

5


V IN =6V IO1 =I O2 =5mA

25

V IN =V C IO1 =5mA



20

6

4

0

6

15

) V (


6

0


V IN =V C IO2 =5mA

1

0

4


5

3

6

0

7

) V (

1

1 O

3

6

V IN =14V IO2 =5mA

5


2


) V ( 2 O

8


■ ON/OFF Control Characteristics 6

10

2



) A m ( q l t n e r r u c t n e c s e i u Q

) V (

V IN = 6V,14V

O

V 5.00 e g a t l o v t 4.95 u p t u O

50


V IN =V C ) V (

40



5.10

20

With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum

) 20 W ( 200 •200 •2mm D (2.3ºC/W) P n 15 o i 100 •100 •2mm t a (5.2ºC/W) p i s s i 10 D r 75 •75 •2mm e (7.6ºC/W) w o P 5

V O1

4 3 V O2

2 1

Without heatsink

0 100

120

140

180

200

220

240

Ambient temperature Ta (ºC) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

0 26

28

30

32

34


36

38

0 –40 –20 0

20 40 60 80 100 120 140 160


15

Dropper Type System Regulator ICs

SI-3322S

External Dimensions

Features ● High

accuracy output of 5V ±30mV backup power supply 4V ±0.2V ● Power on reset function ● Supply voltage monitor function ● Watch dog timer ● CR not required for setting external time constant

(unit: mm)

Index area

● Memory

SI-3322S SKA Lot

7.40 10.00 7.60 10.65

Lot

1

2

3 0.25 • 45° 0.75

Adhesive surface 10.10 10.50

0.23 0.32

2.35 2.65


Symbol

0.33 0.51

Applicable terminals BAI, V CC, V NMIC

V IN (1)

Ratings

Unit

–0.3 to 32

V

–0.3 to 7

V

0.10 0.30

1.27 BSC

Conditions

0.40 1.27

0° to 8°

Coplanarity (height difference among leads) 0.1mm max.

V S, NMIC, RSTTC, OUTE Terminal voltage

V SC, NMI, RESET, OUTE

V IN (2)

Standard Connection Diagram

W/D, STBY Storage temperature

Tstg

—

–40 to +125

°C


Top

—

–40 to +105

°C

Power dissipation

PD

—

1.4

W

+

Ta = 25°C

+ 47µF

Parameter

Symbol

(Ta = 25 °C unless otherwise specified) Ratings max

Unit

Conditions BAI =4.2 to 16V, I SC = –0.2mA

min

typ

3.8

4

4.2

V

V S output voltage

V S

4.97

5

5.03

V

V S –V SC voltage difference

∆ V S

0.3

V

mA

VCC = 5.2V , ISC = –50mA

BAI input current

I BAI

0.6

I CC

5

mA

V B input current

IB

25

mA

V CC = 3 to 16V

20

mA

V CC = BAI = 3 to 16V, I SC = 0mA

IS

BAI = 4.9 to 16V, ISC = –0.2mA

I NMIC

–0.04

–0.1

–0.4

mA

V CC = BAI = 14V

W/D input current

IW/D

–0.04

–0.1

–0.4

mA

V CC = BAI = 14V

RSTTC input current

IRTC

–0.04

–0.1

–0.4

mA

V CC = BAI = 14V

NMI judge voltage

V NIL

4.9

Hysteresis

∆ V N

0.12

NMI output voltage

STBY output voltage

RESET output voltage

OUTE output voltage

OUTE output voltage

Hi

V NOH

Lo

V NOL

Hi

V SOH

Lo

V SOL

Hi

V ROH

Lo

V ROL

Hi

V UOH

Lo

V UOL

Hi

V TOH

Lo

V TOL

5

5.1

V

0.3

V

V S–0.5

V 0.6

V S–0.5 0.6 V S–0.5 0.6 V S–0.5 0.6 V S–0.5

Isource = –1mA

V

Isink = 0.5mA

V

Isource = –1mA

V

Isink = 0.5mA

V

Isource = –1mA

V

Isink = 0.5mA

V

Isource = –1mA

0.6

V

Isink = 0.5mA

TST

5

10

20

ms

60

75

90

ms

Reset cycle

TRC

40

50

60

ms

Reset period

TRP

20

25

30

ms

W/D signal stop detect period

TWS

10

12.5

15

ms

R1,R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1+ R2) • 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.

TNR

80

µs

Standby signal output time

TRS

10

µs

W/D fail judge frequency

FFH

2

Out enable release time

TWE

40

50

Notes: The direction of current flowing into the IC is positive (+).

5

kHz

10

ms

RSTTC: Normally open. GND connected when TRE is to be halved.

+ V NMIC 6

+

V CC 5

V B

V S

4

+

V SC 3

2

– + Current limitcircuit

Main regulator BAI 1 – + Backup regulator

9 NMI

– +

NMI judge circuit

Reference oscillation circuit

OUTE control circuit

GND 8

13 NMIC

11 OUTE

10 OUTE

Counter

Frequency comparator

16 W/D

STBY control circuit

15 STBY

RESET control circuit

12 RESET

14 RSTTC

Timing Chart V CC

V NIL

V NIL+∆ V N

V S

(BAI=14V) 0V

0V

NMI STBY RESET OUTE

TRS

TST

TRP

TRE

TNR TWS

TRC

TWE

OUTE W/D

HI or Lo Power on

16

RESET

Circuit Block Diagram

V SC

Reset signal output time

Microcomputer

Logic circuit

Isource = –1mA Isink = 0.5mA

TRE

STBY

12

RESET

GND

AV CC

NMI

15

STBY

SI-3322S

Start circuit

V

Reset release time

V CC 9

NMI

NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND 13 11 10 16 14 OPEN or GND

NMIC = 0V

V

Standby release time

3 2 V S V SC

V CC = 3 to 16V

NMIC input current

Lo

4 V B

VCC =5.2 to 16V, IO = –350mA

V CC input current

V S input current

+ 68µF

120Ω

47µF

BATT

8

V SC

V SC output voltage

R2 6 5 V NMIC V CC 1 BAI +


A/D converter, I/O circuit, etc.

47µF

R1 IG. SW

W/D input stop W/D input start (microcomputer (microcomputer runaway) resets)

Power off

Dropper Type System Regulator ICs

SI-3322S

Electrical Characteristics ■ V S Line Regulation

■ V S Load Regulation

■ V S Rise Characteristics

5.03

5.03

6

5.02

5.02

5 IO =0A

5.01

5.01

IO =0A

) V ( 5 S V

4

) V ( 5 S V

4.99

4.99

0.4A

4.98 4.97

) V ( S V

5

10

15

20

25

0.4A 2

4.98

0

3

12V

V CC =5.2V

1

4.97 0

0.2

0.4

V CC (V)

0.6

0.8

1.0

1.2

0 0

1.4

2

4

IO (A)

■ V S Overcurrent Protection Characteristics

8

10

V CC (V)

■ V CC Input Current

6

6

■ V B Input Current

5

20 No load

5

4 15

4

) V ( S V

) 3 A m (

3

) A m 10 ( B I

C

V CC =7V

C I

2

2 12V

0

5

1

1

0

0.5

1

1.5

0

2

0

5

10

IO (A)

15

0

20

0

5

V CC (V)

■ V S Input Current

15

20

V CC (V)

■ V SC Rise Characteristics

20

10

■ V SC Overcurrent Protection Characteristics

5

6

No load 5

4

15

) A m 10 ( S I

) V (

) V (

3

C S

V

C S

4 3

V

2

2 5

0

1

0

5

10

15

20

0

1

0

5

10

V CC (V)

15

20

0

0

2

BAI (V)

■ BAI Input Current

6

8

10

I SC (A)

■ V S-V SC Voltage Difference

500

4

■ NMI Judge Voltage Characteristics

500

6

No load 400

400

) 300 A µ ( I

) 300 V m ( S V

A

B I 200

5 4

) V ( I 3 M N

∆ 200

2 100

0

100

0

5

10

BAI (V)

15

20

0

1

0

20

40

60

ISC (mA)

80

100

120

0 4.5

4.7

4.9

5.1

VCC (V)

5.3

5.5

17

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

External Dimensions

Features ● Single

12.2

● Power

input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) on reset function ● Watchdog timer ● Built-in drooping type overcurrent and thermal protection circuits (ch1)

10.5±0.2

(unit: mm)

±0.2

+0.1

1.0 –0.05

16

Fin thickness

9

2 . 0 ±

5 . 7


Symbol

DC input voltage Output control terminal voltage Output current

Ratings

Io1

0.4

Io2

0.2

MODE

W/D/C terminal input voltage

W/D/C

TC terminal input voltage

TC

CK terminal input voltage

CK

Vo1-fail terminal output voltage

Vo1-fail

Reset terminal output voltage

RESET

8 +0.15

1.27±0.25

400mS

V

40

CH2

1 0.4–0.05

2 . 0 ±

–0.3 to 35

CH1

0 . 2

Remarks

Reverse connection 1 min max.

V

40

EN

MODE terminal input voltage

Unit

–13 to 35

V IN

2 . 8 . 0 0 + –

(Ta=25ºC)

5 . 2

400mS

+0.15

0.25–0.05

A

–0.3 to 7

V



Tj

–40 to 150

°C

Storage temperature

Tstg

–40 to 150

°C

D1 Vo1

Vin

Thermal resistance (junction to case)

j-c

4.1

°C/W


Thermal resistance (junction to ambient air)

j-a

38

°C/W

With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18µm)

EN Vo1

SPF3004 Cin

Vo1 fail

MODE

+

Vo2

+

Co1

Load

Battery


Output voltage

Dropout voltage

Ripple rejection

V IN

Vo1+V DIF1 * 3

CH1

Vo1

4.90

5.00

5.10

CH1

Vo1

4.85

5.00

5.15

CH2

Vo2

3.15

3.30

3.45

CH1

V DIF 11 V DIF 12 V DIF2 RREJ 1 RREJ 2

CH1 CH2 CH1 CH2

GND current

Overcurrent protection CH1 starting current CH2 CH1 Residual current at a short CH2 EN output control voltage ON

OFF Vo1-fail terminal LOW voltage Vo1-fail terminal HI voltage Reset terminal LOW voltage Reset terminal HI voltage CH1 Reset detect voltage CH2 CH1 CH2 Power on reset delay time W/D time W/D pulse time MODE terminal control voltage Reset detect voltage hysteresis width

V ENth

50 5 70 0.402 0.201 0.402 0.201 1.0 0.9

IENH1 IENH2 IENL V fail L V fail H V RSL V RSH Vo1thH Vo1thL Vo2thH Vo2thL ∆ Vo1th ∆ Vo2th tdly

twd twdp Vmodeth ImodeH ON MODE terminal control current ImodeL OFF W/D/C terminal control voltage Vw/d/cth Iw/d/cH ON W/D/C terminal control current Iw/d/cL OFF Vckth CK terminal control voltage IckH ON CK terminal control current IckL OFF

18

0.5 0.25 0.5

Iq IGND Is11 Is21 Is21 Is22

max 35 * 4

54 54 10

–1.0

50 250 10 100 1.80 0.80 1.80 0.80 3.5 3.5 50 30 1.0 0.5

Vo1–0.8V * 5

0.5 Vo1–0.8V *

5

Vo1 •0.97 4.05

Vo2 • 0.985 3.00 0.255 0.105 0.70 •Rtc •Ctc 0.72 •Rtc •Ctc 0.74 •Rtc •Ctc 0.52 •Rtc •Ctc 0.54 •Rtc •Ctc 0.56 •Rtc •Ctc 0.04 •Rtc •Ctc 0.06 •Rtc •Ctc 0.08 •Rtc •Ctc 1.0 –1.0 1.0 –1.0 1.0 –1.0

CK

TC D2

min


EN output control current

W/D/C

Ratings typ

Symbol

Input voltage

RESET

GND

3.0 200 1.0 3.0 200 1.0 3.0 200 1.0

Unit

Conditions

V V IN =Vo1+V DIF1 to 18V, Io1 =0 to 0.4A, Tj =–40 to 125 C V IN =Vo1+V DIF1 to 18V, Io1 =0 to 0.4A, Tj =–40 to 150 C V IN =Vo2+V DIF1+V DIF2 to 18V, Io1 =0 to 0.2A °

V

V

Io1 =0.4A Io1 =0.2A, Tj =25 °C Io2 =0.2A

db

f = 100 to 200Hz

µ A

mA mA A A V

µ A

V V V V V V V V V V S S S V

Io1 =Io2 =0.2A Vo1 =4.5V Vo2 =2.8V Vo1 =0V Vo2 =0V Tj = – 40 to 125°C

+ Co2

Cin: Capacitor (39 µF) for oscillation prevention CO1: Output capacitor (39 µF) CO2: Output capacitor (39 µF) Tantalum capacitors are recommended especially for low temperatures. D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

Timing Chart

*8 EN =6.4V, Tj = –40 to 125°C EN =3.51V, Tj = –40 to 125°C EN =0V, Tj = –40 to 125°C Isink = 250µ A, (Pull-up resistance 20 kΩ typ) Isource =15µ A Isink = 250µ A, (Pull-up resistance 20 kΩ typ) Isource =15µ A Vrs, Vfail 4.5V Vrs, Vfail 0.8V Vrs 3.0V Vrs 0.8V ∆ Vo1th =Vo1thH-Vo1thL ∆ Vo2th =Vo2thH-Vo2thL Min. set time: 6mS Min. set time: 4mS Min. set time: 400 µS

Vin

*7 W/D/C =5V W/D/C =0V, Tj = –40 to 125°C Min. clock pulse time =5 µS (Duty 50%) CK =5V CK =0V, Tj = –40 to 125°C

Notes: *3: Refer to dropout voltage. *4: Since P D (max) = {(V IN–V O1) • (I O1+ IO2)} + (V IN •Iq) + { (V O1–V O2) • IO2} = 30W, V IN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in V O1 (CH1 side) only. The design thermal protection starting temperature is 155 °C (min.) and 165 °C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150°C is 16mS (0.32V/mS) max.

EN (ON) operation

EN

EN (OFF) opera tion

OCP operation Vo1thH

Vo1thL

Vo1

Reset operation

Vo1 fail (Vo1 pull-up)

OCP operation Reset operation

Vo2

Vo2thH

Vo2thL

MODE (Vo1 system connection)

Vmodeth Vo1 pull-up status

Open status

TC (3.3 pull-up)

RESET W/D/C

tdly

tdly

twd

(Vo1 system connection)

tdly-twdp twdp Open status

CK

V

µ A

+ Ctc

V IN =35V, EN =0V

MODE =5V MODE =0V, Tj = –40 to 125 °C

V

Load

V IN =16V, EN =0V

µ A

µ A

Rtc

°

W/D Stop period


Electrical Characteristics ■ Rise Characteristics of Output Voltage

■ Line Regulation (V 01 )


6 5.10

) V (

IO1=0A 0.4A

2 O

V , 1

4

IO2 =0A 0.2A

2

) V (

) V (

V e g a 5.00 t l o v t u p t u O

V e g a 3.40 t l o v t u p t u O

1 O

O


3.50

2 O

IO1=0A 0.2A 0.4A

3.30

4.90 0

0

2

4

6

8

10

IO2 =0A 0.1A 0.2A

0


10

20

30

40

0

10


■ Load Regulation (V 01 )

20

30

40



■ Dropout Voltage (V 01 ) 1.0

3.50

5.10 ) V (

) V (

) V (

1 O


V IN =6V 10V 14V 18V

V


V IN =6V 10V 14V 18V

e g 0.5 a t l o v t u o p o r D

3.30

4.90 0

1 f i d

2 O

0

0.1

0.2

0.3

0

0.4

0


0.05

0.10

0.15

0

0.20

0

0.2


■ GND Current

0.4

0.6


■ Overcurrent Protection Characteristics (V 01 )


6

) A m (

40

) V ( 1 O

D N G I

t n e r r u c D N G


IO1=0.4A

20 IO1=0.2A IO1=0A

0

10

20

30

) V (

4


V IN =6V 10V 14V 18V 2

0

40

0


0.5

2

0

1.0

0

0.2

0.4

0.6


■ EN Terminal Output Voltage

6


6 IO1=5mA

) V ( V e g a t l o v t u p t u O

V IN =6V 10V 14V 18V



1 O

4

2 O

) W (

) V ( 1 O

4


2

40 Infinite heatsink equivalent

D (Tc=25°C) P 30 n o i t a p i s 20 s i d r e w o P 10

4

2

Copper foil area (5.0•7.4mm, t=1 µm)

100

120

140

160

180


200

0

1

2

3

EN terminal voltage V EN (V)

4

0 -40

0

25

50

85

125 150


19


External Dimensions

Features ● Dual

12.2

● Power

input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) on reset function ● Watchdog timer ● Built-in drooping type overcurrent and thermal protection circuits (ch1)

10.5±0.2

(unit: mm)

±0.2

+0.1

1.0 –0.05

16

Fin thickness

9

2 . 0 ±


Symbol

(Ta=25ºC) Ratings

Unit

V IN2

–13 to 35

V

Vo1, Vo2 output co ntrol termi nal voltage

EN

–0.3 to 35

V

Vo2 output control terminal voltag e

VC

–0.3 to 35

V

CH1

Io1

0.4

CH2

Io2

0.2

Output current TC terminal input voltage

TC

CK terminal input voltage

CK

W/D/C terminal input voltage

W/D/C

Reset terminal output voltage

RESET

Power dissipation

–0.3 to 7

18.6

PD2

2.97

Reverse connection 1 min max.

+0.15

1.27±0.25

0.4–0.05

2 . 0 ±

5 . 2

V

W

–40 to 150

°C


Top

–40 to 105

°C

Storage temperature Thermal resistance (junction to case)

Tstg

–40 to 150

°C

6.7

j-c

42

j-a

°C/W °C/W

With an infinite heatsink mounted. D1

*1

Vin1 EN Vin2

With an infinite heatsink mounted.

Cin –

Battery

Vc

Vo1 3Pin

4Pin

2Pin

14Pin

6Pin

SFP3006 7Pin

5Pin

RESET

GND

CK

Tc

Output voltage Dropout voltage Ripple rejection

Overcurrent protection starting current Residual current at a short

max

Vo1

4.85

5.00

5.15

Vo2

4.85

5.00

5.15

CH1

V DIF1

0.5

CH2

V DIF2

0.5

CH1

RREJ1

54

CH2

RREJ2

54

Iq IGND

35

* The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.

50

5

10

mA

70

100

mA

CH2

Is21

0.201

0.8

CH1

Is21

0.402

1.8

Is22

0.201

0.8

V ENth

0.9

3.5

OFF

IENL V RSL

Reset terminal HI voltage

V RSH

CH

50 –1.0

0.5 Vo1-0.8V

Vo1thH Vo1thL

1.0

Vo1• 0.97 4.05

Conditions

*

Load

Co2

V IN 1 = 6 to 18V, Io = 0 to 0.3A V IN 2 = 6 to 18V, Io = 0 to 0.3A

µ A

A A

f = 100 to 120Hz V IN1 =16V, V EN =0V V IN1 =35V, V EN =0V Io1 =Io2 =0.2A

V

Isink =250µ A (Pull-up resistance 20k Ω typ)

V

Isource =15µ A * 4

V

Vrs

4.5V

V

Vrs

0.8V

t wd

0.93 • Rtc • Ctc 1.03 • Rtc • Ctc 1.13 • Rtc • Ctc

S

Min. set time: 4mS


S

Min. set time: 400 µS

OFF

IckL

3.0 200

–1.0

1.0

V µ A

Vc output control current

Vcth IcH IcL

W/D/C terminal control voltage Vw/d/cth W/D/C terminal control current

1.0

ON

Iw/d/cH

OFF

Iw/d/cL

3.5 300

–1.0

1.0

Min. clock pulse time: 5µs (Duty 50%) V CK =5V V CK =0V

1.0

3.0 200

–1.0

1.0

V µ A

Vc

Vc =5V

D E T

W/D/C (11 Pin)

GND (1,9,12,13 Pin)

TC

CK

(8 Pin)

(10 Pin)

Timing Chart Vin1, Vin2 (+B) EN

ENthL

ENthH Vo1thH

Vo1thL

Vo

Vc =0V

Vo2

V W/D/C =5V

RESET

V W/D/C =0V

CK

(Main power supply)

TC

Notes: *2: Refer to Dropout Voltage. *3: Since P D (max) = (V IN–V O1) • IO1+ (V IN2–V O2) • IO2 + (V IN • Iq) = 22W, V IN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in V O1 (CH1 side) only. The design thermal protection starting temperature is 151 °C (min.) and 165 °C (typ). These values represent the design warranty.

20

Drive2 OCP2

Err.

(BACKUPpower supply)

V µ A

(14 Pin)

(7 Pin)

Vc (Vo2:EN)

Vo1

Vc output control voltage

RESET

Vo2

(5 Pin)

EN =0V

t wdp

1.0

Err.

Vo1 RESET W/D

Vin2

EN =5V

W/D pulse time

IckH

Drive1 OCP1

D E T

(6 Pin)

W/D time

Vckth

(2 Pin)

Vo2 =0V

Min. set time: 6mS

ON

EN TSD

EN

Vo1 =0V

S

CK terminal control current

(4 Pin)

(3 Pin)

V µ A

Vo1

Vin1

Vo2 =4.5V


CK terminal control voltage

Circuit Block Diagram

Vo1 =4.5V

tdly

Power on reset delay time

Cin: Capacitor (39 µF) for oscillation prevention CO1: Output capacitor (39 µF) CO2: Output capacitor (39 µF) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47 µ F in parallel). D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

2, 3

V

250

1.8

IENH

V

50

0.402

ON

V

10

Is11

CH2

Unit

db

CH1

Reset terminal LOW voltage

Reset detect voltage

typ

CH2

EN output control voltage EN output control current

Ratings min

CH1

GND current

Load

–

Vo1+V DIF 1


– Ctc

D2

V IN1, 2

Input voltage

Co1

W/D/C

Electrical Characteristics Symbol

Rtc

Vo2 8Pin 10Pin 11Pin

1,9, 12,13Pin

*1

Notes: *1: With glass epoxy + copper foil board (size 5.0 • 7.4cm; t: glass epoxy =1.6mm / copper foil =18 µm)

Parameter

+0.15

0.25–0.05

A

Tj

Thermal resistance (junction to ambient air)

0 . 2

8


PD1


2 . . 8 0 0 + –

Remarks

1

V IN1

DC input voltage

5 . 7

W/D/C

tdly

twd

twdp

W/D OFF mode


Electrical Characteristics ■ Rise Characteristics of Output Voltage (V 01 )

■ Rise Characteristics of Output Voltage (V 02 )

6

) V ( 1 O


6

) V (

4

2 O


IO1=0A 0.2A 0.4A 2

0


0

2

4

6

8

5.10

) 5.05 V (

4

1 O

V e g a 5.00 t l o v t u p t u O4.95

IO2 =0A 0.2A 0.4A 2

0

10

0

2

4


6

8

4.90

10


5.10

) 5.05 V (

) 5.05 V (

) 5.05 V (

V e g 5.00 a t l o v t u p t u O4.95

V e g 5.00 a t l o v t u p t u O 4.95

V e g 5.00 a t l o v t u p t u O 4.95

2 O

1 O

IO1=0A 0.1A 0.2A

4.90 15

10

20

25

4.90

30

V IN =6V 10V 14V 18V

0

0.1

0.2

0.3

4.90

0.4

30

0

) V (

V 0.4

V 0.4

e g a t l o v t u o 0.2 p o r D

e g a t l o v t u o 0.2 p o r D

0.10

0.15

0.20


0.6

) V (

0.05


■ Dropout Voltage (V 02 )

1 f i d

25

V IN =6V 10V 14V 18V


0.6

20

2 O


■ Dropout Voltage (V 01 )

15


5.10

10

5


5.10

5

0



0

IO1=0A 0.2A 0.4A

6

) V (

2 f i d

1 O


Ta=150°C 25°C –40°C

4 V IN =6V 10V 14V 18V 2

Ta=150°C 25°C –40°C 0

0

0.2

0

0.4

0

0.1


0

0.2

0



6

2 O


) V (

4

1 O


V IN =6V 10V 14V 18V 2

0 0

0.2

0.4


0.6

0.6

0.8


IO1=5mA ) V (

0.4



6

0.2

) W (

Infinite heatsink equivalent (Tc=25 °C)

D

4

P 12 n o i t a p i s 8 s i d r e w o P 4

2

0 100

16

125

150

175


200

0 -50

Copper foil area (5.0•7.4mm, t=18 µm)

0

50

100

150


21


SI-3201S

External Dimensions

Features current of 3A (Ta = 25ºC, V IN = 8 to 18V) efficiency of 82% (V IN = 14V, I O = 2A) ● Requires 5 external components only ● Built-in reference oscillator (60kHz) ● Phase internally corrected ● Output voltage internally corrected ● Built-in overcurrent and thermal protection circuits ● Built-in soft start circuit

(unit: mm)

● Output

3.2 ±0.2

● High

4.2 ±0.2

10.0 ±0.2

2.8 ±0.2

5 . 0 2 . 0 ±

0 . 2 4 . 0 ±

9 . 7 3 . 0 ±

9 . 6 1

) 9 . 7 1 (

a

2.6 ±0.1

b

) 0 . 2 ( 6 . 0 ±

0 . 5

0.95 ±0.15


Symbol

+0.2 0.85 –0.1

(Ta=25ºC) Ratings

Unit

) 6 . 4 (

Conditions

) 0 . 8 (

+0.2 –0.1

0.45

Input voltage

V IN

35

V

IO

3

A

V SWOUT

–1

V

PD1

22

W

3.9 ±0.7

P1.7±0.7 •4 =6.8 ±0.7

Output voltage SWOUT terminal voltage

Power Dissipation

PD2

1.8

W

Tj

–40 to +150

ºC

Storage temperature

Tstg

–40 to +125

ºC

j-c

5.5

ºC/W

j-a

66.7

ºC/W


Output current Operating temperature

4

5


(Forming No. 1101)

typ

8

SI-3201S

1

V IN

V IN

max 18

Unit

Conditions

IO

0.5

3

A

Top

–40

+85

ºC

e

f

C1

V

V O

SWOUT

b

d

L1

2

SW Tr

a c

Ratings

Symbol V IN

3


min

Input voltage

2

Stand-alone

Recommended Operating Conditions Parameter

1. V IN 2. SWOUT 3. GND 4. V S 5. SS

With infinite heatsink 1


(4.3)

8.2 ±0.7

D1

+

g

5

h

C3

Ta—PD characteristics

+

SS

GND

C2

V S 4 i

3 GND


Output voltage

Symbol V O

(V IN = 14V, I OUT =2A, Tj = 25ºC unless ot herwise speci fied) Ratings min

typ

max

4.80

5.00

5.20

Line regulation

V O LINE

100

Load regulation

V O LOAD

50

Efficiency

*1

Oscillation frequency Quiescent circuit current Overcurrent protection starting current

82 f OSC

50

Iq

Unit

Conditions

V V IN =8 to 18V

mV mV

IO =0.5 to 3A

70

kHz

5

10

mA

C1: 1000µF C2: 1000µF

L 1: 250µH D1: RK46 (Sanken)

a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver

f: Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage

Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000µF or higher capacitors with low internal resistance.

%

60

GND

Refer to the respective data books for more information on

IO =0A

reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start.

IS

3.1

A

*2

(3) L1 should be a choke coil with a low core loss for switching power supplies.

Soft *3

Low level voltage

start terminal

Source current when low

I SSL

Discharge resistance

RDIS

V SSL 15

25 200

(4) Use a Schottky barrier diode for D1 and make sure that the

0.2

V

35

µ A

V SSL =0.2V

k Ω

V IN =0V

Notes: *1. Efficiency is calculated by the following equation: V O • IO • 100 (%) V IN • IIN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC. =

reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (–1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal ( V S ) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.

SI-3201S 5

SS C3

22

SI-3201S 5

SS

SI-3201S 5

SS C3


SI-3201S

Electrical Characteristics ■ Line Regulation

■ Load Regulation

5.10

5.05

) V (

5.15

6

5.10

5

) V (

) V (

V e g a 5.00 t l o v t u p 4.95 t u O


O 5.05

O

V e5.00 g a t l o v t4.95 u p t u O

Io = 0A = 1A = 2A = 3A

4.90

O

VIN =18V = 10V = 7V

4.90 4.85

4.85 0

5

10

15

20

25

30

35

0

0.5

1.0

1.5

2.0

2.5

) V ( O V e g a t l o v t u p t u O

V IN = 18V = 10V = 7V

50

40 2.0

2.5

3.0


4

6

8

10


VIN =18V = 10V = 7V

4 3 2

0 1.5

2

6

1

1.0

0

■ Overcurrent Protection Temperature Characteristics

5

80

0.5

2


6

0

3

0

3.0


90

y c n e i c i f 60 f E

4


■ Efficiency Curve

70

Io = 0A = 1A = 2A = 3A

1


) % (


4

TC = +100, 25, --20ºC

3 2 1

0

1.0

2.0

3.0


4.0

5.0

0

0

1.0

2.0

3.0

4.0

5.0



With silicone grease Heatsink: aluminum


) 20 W ( D

P n 15 o i t a p i s s 10 i D r e w o P 5

0 –40

0

40

80

120

160


23

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

External Dimensions

Features diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Surface-mount full-mold package

SMD-16A

(unit: mm)

● Built-in

3 . 0 ±

0 . 1

0.89 ±0.15

0.25

16 3 . 0 ±

2 . 0

2 . 5 . 0 0 ±

±

±

8 . 0 . 9 3

3 . 0 . 6 8

5 1 . 0 o t 0

Parameter

+0.15

Symbol

Ratings

Unit

V B

–13 to +40

V

Drive terminal applied voltage

V D

–0.3 to V B

V

Input terminal voltage

V IN

–0.3 to +7.0

V

DIAG output applied voltage

V DIAG

–0.3 to +7.0

V

DIA G o ut pu t so ur ce cu rr en t

IDIAG

3

mA

V B–D

V B –0.4

V

Output current

IO

1.5

A

Power dissipation

PD

2.6

W


Tj

–40 to +150

ºC

and drive terminal

a b Pin 1


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

8

20.0max

(Ta=25ºC)

Power supply voltage

Voltage across power supply

9

x a m 8 . 6

0.3 –0.05

Absolute Maximum Ratings

2.54 ±0.25

+0.15

0.75 –0.05

19.56 ±0.2

Conditions x 2 . a 0 m ± 6 . 0 . 3 4

2 . 0 ±

4 . 1


Equivalent Circuit Diagram Without heatsink, all circuits operating

The MIC is bound by the dotted lines.

9,12,16

IN1

2

Drive

CONT.

3

O.C.P

DIAG DET.

Parameter

Symbol

Operating power supply voltage

V Bopr


Iq

Threshold input voltage

V INth

Input current

(V Bopr =14V, Ta=25ºC unless otherwise specified) Ratings min

typ

6.0

IIN

Lo output

Unit V

12

mA

0.8

3.0

V

1.0

mA

0

100

*

D1 1

*

7

Drive

CONT. 11k Ω typ.

6

O.C.P

DIAG DET.

Lo output

8,10 11

4,5,13

µ A

V IN =0V

V CE (sat)

0.5

V

IO 1.0A, V Bopr =6 to 16V

Output terminal sink current

IO (off)

2.0

mA

VO =0V, V IN =0V

Saturation voltage of DIAG output

V DL

0.3

V

Leak current of DIAG output

IDGH

100

µ A

Open load detection resistor

Ropen

1

30

k Ω


IS

1.6

*2 *1

Out2 D2

*2

V IN =5V

Saturation voltage of output transistor

GND

[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg:Pre-regulator

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection

*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic

A

IDIAG =3mA VDIAG =5V

IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function V ( B, Out1, Out2, GND). The terminals of the same function must be

shorted at a pattern near the product. V O =V Bopr –1.9V

TON

8

30

µs

IO =1A

TOFF

15

30

µs

IO =1A

TPLH

10

30

µs

IO =1A

TPHL

15

30

µs

IO =1A

Output transfer time

DIAG output transfer time

Out1 2

14

Conditions IN2

16

1,15 T.S.D

DIAG2

5

IIN

Hi output

max

*

11k Ω typ.

DIAG1


V B 2

Pre. Reg.


V B

Note: * The rule of protection against reverse connection of power supply is V B = –13V, one minute (all terminals except, V B and GND, are open).

Out

D1

SDH04 IN

Diagnostic Function

PZ

V CC DIAG 5.1k Ω

GND

d a o L

V B 3.0V

GND

GND

V IN

0.8V

Truth table

V OUT SHORT Is

OPEN OPEN

OVER VOLTAGE

V O

H

H

L

L

GND

TSD

Note 1: A pull-down resistor (11 k Ω typ.) is connected to the IN terminal. V OUT turns "L" when a high impedance is connected to the IN terminal in series.

IO

GND V DIAG Normal

24

V IN

Shorted lo ad

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Electrical Characteristics ■ Quiescent Circuit Current (dual circuit)

■ Circuit Current (single circuit)

V IN = 0V

20

50

Ta = –40ºC 25ºC 125ºC

80

Ta = –40ºC

) 60 A m (

25ºC

25ºC

) 30 A m (

125ºC

B I 20

20

B I 40

V IN = 0V

10

V O shorted V O open 10

V IN = 5V

100

Ta = –40ºC

40

) A m 10 ( q I

0 0

■ Circuit Current (dual circuit) V IN = 5V

125ºC

20 V IN = 0V

30

40

0 0

46

10

20

V B (V)

30

40

0 0

46

10

V B (V)

■ Saturation Voltage of Output Transistor

(Ta=–40ºC)

) t a s (

V B = 18V

) V (

25ºC

(Ta=25ºC)

V B = 18V

15

) V (

14V

10 O

O

V

E C

46

20

15

) 1.0 V (

40


20 Ta= 125ºC

V B =16V V B =6V

30

V B (V)


1.5

20

V

14V

10

V 0.5 –40ºC

5

5

6V

6V 0

0

1

2

0

3

0

1

2

IO (A)

3

4

0

1

2

IO (A)


(Ta=125ºC)

V B = 14V I O = 1A

15 Ta = 125ºC

V B = 18V

3

4

IO (A)

■ Threshold Characteristics of Input Voltage

20

25ºC

■ Input Terminal Source Current V B = 14V

1.0

–40ºC 0.8

15 10 14V

) V ( 10 O V

0

) 0.6 A m ( N I I 0.4

) V ( O

V

Ta = 125ºC 25ºC –40ºC

5 5

0

0.2

6V

0

1

2

3

0

4

0

1

IO (A)

3

V IN (V)

■ Input Terminal Sink Current

0

0

2

4

6

8

10

V IN (V)

■ Saturation Voltage of DIAG Output

V B =14V V IN=0V

1.0

2

0.3 V B = 14V IDIAG = 3mA

0.2

) A µ 0.5 (

) V ( L D

L N

V

I I

0.1

0 –50

0

50

Ta (ºC)

100

150

0 –50

0

50

100

150

Ta (ºC)

25

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

External Dimensions

Features ● Built-in

diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● TO220 equivalent full-mold package not require insulation mica

(unit: mm) 4.2 ±0.2

3.2 ±0.2 10 ±0.2

2.8 ±0.2

2 . 0

±

4

2 . 0

±

9 . 7 3 . 0

±

9 . 6 1

x a m 0 2

2.6 ±0.1

a b

9 . 2


Symbol

2 . 3 . 0 0 + –

0.94 ±0.15

(Ta=25ºC) Ratings

Unit


V B

40

V


V IN

–0.3 to V B

V

DIAG terminal voltage

V DIAG

6

V

V CE

40

V

R-end

Conditions

Collector-emitter voltage Output current

IO

1.8

A

PD1

18

W

PD2

1.5

W

Tj

–40 to +125

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +125

ºC

P1.7 ±0.1

0.45 –0.1


±

1. GND 2. V IN 3. V O 4. DIAG 5. V B


6 . 3

4 ±0.6

• 4 = 6.8

With infinite heatsink (Tc=25ºC)

Power Dissipation

5 . 0

+0.2

+0.2

0.85 –0.1


(Forming No. 1123)

(Tc =25ºC)

Standard Circuit Diagram V B 5


Symbol


V Bopr


V CE (sat)

Output leak current

IO, leak

Input voltage

Input current

Ratings min

typ

6.0

Iq


5

max

Unit

V IN 2

12

mA

0.5

V

1.0

V

2

mA

V CEO =16V V Bopr =6 to 16V

V IN

V O

V Bopr =6 to 16V

H

H

L

L

2.0

V B

V

Output OFF

V IL

–0.3

0.8

V

Output OFF

I IL


Thermal protection starting temperature Open load detection resistor Output transfer time

DIAG output transfer time Minimum load inductance

1


5.1k Ω

d a o L

1


V IN =5V

–0.1

mA

V IN =0V

IS

1.9

A

TTSD

125

GND

Truth table

V Bopr = 14V, V O = V Bopr –1.5V

Diagnostic Function 145

Ropen

ºC 30

k Ω

V Bopr =6 to 16V

TON

8

30

µs

V Bopr =14V, I O =1A

TOFF

15

30

µs


6

V

V CC =6V

V DL

0.3

V

V CC =6V, IDD =2mA

TPLH

30

µs


µs


4.5

TPHL L

30 1

Normal

Open load

Shorted load

Overheat

V IN V O DIAG

mH DIAG V IN V O L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to V B terminal.

Mode


26

V CC

DIAG

LS-TTL or CMOS

V Bopr =14V, V IN =0V

PZ

3

4

mA

V DH DIAG output voltage

Conditions

V

V IH

I IH

SI-5151S

30

Output ON

Output ON

V O

(Ta=25ºC unless otherwise specified)

Normal

Normal


Electrical Characteristics ■ Quiescent Circuit Current

■ Circuit Current

10

■ Saturation Voltage of Output Transistor 1.0

40 Ta = --40ºC 30

) A m 5 ( q I

95ºC

25ºC

) A m 20 (

--40ºC

) t a 0.5 s (

Ta = 95ºC

B I

VB= 6 to 16V

) V (

Ta = 25ºC

95ºC

E C

V --40ºC 10 25ºC

0

0

10

20

30

0

0

40

0

10

20

V B (V)

14 VB = 14V

O

V

16

16

14

14 VB= 14V

) V ( O

V

10 8

6

6

4

4

4

2

2

2

1

2

0

3

0 0

1

IO (A)

2

3

2

3

■ Input Current (Output OFF) 2

1.0

15

1

IO (A)

■ Input Current (Output ON)

20 Ta = 95ºC

0

IO (A)

■ Threshold input voltage

3

VB= 14V

12

10

0

2

■ Overcurrent Protection Characteristics (Ta=100ºC)

6

0

1

IO (A)

) V ( 8 O V

8

0

12

10

50


16

) V (

40

VB (V)

■ Overcurrent Protection Characteristics (Ta= –40ºC)

12

30

V IN = 0V V B = 14V

V IN = 5V V B = 14V

2 5º C –4 0º C

V B = 16V IO = 1A

) A m0.5 (

) V ( 10 O V

) A µ ( L I I

H

I I

1

5

0 –40

0 0

1

2

2.2

0

50

V IN (V)

Ta (ºC)


0 –40

0

50

100

Ta (ºC)


0.2

16 V B = 14V

) V (

) t a 0.1 s (

12

6

) 10 V ( 6

) 5 V ( G4 A I D3

4

2

2

1

O

V

V o

14

V

G D

0 –40

100

8

DIAG V B = 14V IO = 10mA

0 0

50

Ta (ºC)

100

0

50

100

150

Ta (ºC)

27




diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● TO220 equivalent full-mold package not require insulation mica

4.2 ±0.2

3.2 ±0.2 10 ±0.2

2.8 ±0.2

2 . 0

±

4

2 . 0

±

9 . 7 3 . 0

±

9 . 6 1

x a m 0 2

2.6 ±0.1

a b

2 . 3 . 0 0 + –

9 . 2

0.94 ±0.15


R-end

(Ta = 25ºC)

Symbol

Ratings

Unit


V B

40

V


V IN

–0.3 to V B

V


V DIAG

6

V

V CE

40

V

Conditions

Collector-emitter voltage Output current Power Dissipation Junction temperature

P1.7 ±0.1

0.45 –0.1

IO

1.8

A

22

W


PD2

1.8

W


Tj

–40 to +150

ºC

TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

±

• 4 = 6.8

4

1. GND 2. V IN 3. V O 4. DIAG 5. V B

PD1


5 . 0

+0.2

+0.2

0.85 –0.1

6 . 3

±0.6


(Forming No. 1123)

Standard Circuit Diagram V B 5 V O


Symbol


V Bopr

Quiescent circuit current Saturation voltage of output transistor Output leak current

(Ta=25ºC unless otherwise specified) Ratings min

typ

6.0

Iq

max 30

5

V CE (sat) IO, leak

Unit

SI-5152S

Conditions

V IN 2

12

mA


0.5

V


1.0

V


2

mA

V CEO =16V, V IN =0V V Bopr =6 to 16V

Output ON

V IH

2.0

V B

V

Output OFF

V IL

–0.3

0.8

V

Output ON

IIH

1

mA

V IN =5V

Output OFF

IIL

–0.1

mA

V IN =0V

IS

1.9

A


TTSD

150

ºC

V Bopr 6V

30

k Ω

V Bopr =6 to 16V

LS-TTL or CMOS

5.1k Ω

d a o L

1

GND

Truth table

Input voltage

V CC

DIAG 4

V

PZ

3

V Bopr =6 to 16V

V IN

V O

H

H

L

L

Input current Overcurrent protection starting current

Thermal protection starting temperature Open load detection resistor

Diagnostic Function Normal

Ropen TON

8

30

µs


TOFF

15

30

µs


µ A

V CC =6V, V Bopr =6 to 16V

Open load

Shorted load

Overheat

Normal

V IN

Output transfer time DIAG output leak current

IDIAG

100


V DL

0.3

V

VCC =6V, VBopr =6 to 16V, IDO =2mA

TPLH

30

µs


TPHL

30

µs


V O DIAG


L

1

mH

Mode Normal


Open load Shorted load Overheat

V IN L H L H L H L H

V O L H H H L L L L

DIAG L H H H L L L L

● DIAG output will be undetermined when a voltage

exceeding 25V is applied to V B terminal.

28



■ Circuit Current

10


40 Ta =–40ºC 30

) A m 5 ( q I

95ºC

25ºC

) A m 20 (

–40ºC

Ta =95ºC

B I

V B = 6 to 16V

) V ( ) t a s 0.5 (

Ta =25ºC

95ºC

E C

V –40ºC 10 25ºC

0 0

10

20

30

0

40

0 0

10

20

V B (V)

14 VB = 14V

O

V

) V (

8

O

0

16

16

14

14 VB= 14V

10

) V (

8

O

10 8

V

6

4

4

4

2

2

2

0

3

0 0

1

IO (A)

2

3

1

2

3

IO (A)


20


1.0

15

0

IO (A)


Ta = 95ºC

VB= 14V

12

6

2

3


6

1

2

IO (A)

V

0 0

1

12

10

50


16

) V (

40

VB (V)

■ Overcurrent Protection Characteristics (Ta = –40ºC)

12

30

V IN = 0V V B = 14V

V IN = 5V V B = 14V

2 5º C –4 0º C

V B =16V IO =1A

) A m0.5 (

) V ( 10 O V

) A µ 1 ( L

H

I I

I I

5

0 0

1

2

2.2

V IN (V)

0 –40

0

50

Ta (ºC)

100

0 –40

0

50

100

Ta (ºC)

■ Saturation Voltage of DIAG Output 0.2 V B = 14V

) V ( L 0.1 D

V

0 –40

0

50

100

Ta (ºC)

29

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

External Dimensions

Features diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Built-in Zener diode ● TO220 equivalent full-mold package not require insulation mica

(unit: mm)

● Built-in

4.2 ±0.2

3.2 ±0.2 10 ±0.2

2.8 ±0.2

2 . 0

±

4

2 . 0

±

9 . 7 3 . 0

±

9 . 6 1

2.6 ±0.1

a b

x a m 0 2

2 . 3 . 0 0 + –

9 . 2

0.94 ±0.15 R-end


(Ta=25ºC)

Symbol

Ratings

Unit


V B

–13 to +40

V


V IN

–0.3 to V B

V


V DIAG

6

V

Collector-emitter voltage

V B —V Z

V

IO

2.04

A

PD1

22

W


PD2

1.8

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

Power Dissipation Junction temperature

0.45–0.1

• 4 = 6.8

in Electrical Characteristics

±

4

1. GND 2. V IN 3. V O 4. DIAG 5. V B

Refer to "Surge clamp voltage"

V CE

Output current

P1.7 ±0.1

5 . 0

+0.2

+0.2

0.85 –0.1

Conditions

6 . 3

±0.6


(Forming No. 1123)


SI-5153S


Symbol


V Bopr

(Ta=25ºC unless otherwise specified) Ratings min 6.0

Iq

Quiescent circuit current Saturation voltage of output transistor

typ

5

30

V

12

mA

0.47

V CE (sat) IO, leak

Output leak current

max

Unit

V IN 2

3

V CC

DIAG 4

Conditions LS-TTL or CMOS

5.1k Ω

d a o L

1


V


2

mA

V CEO =16V, V IN =0V V Bopr =6 to 16V

Output ON

V IH

2.0

V B

V

Output OFF

V IL

–0.3

0.8

V

Output ON

IIH

1

mA

V IN =5V

Output OFF

I IL

–0.1

mA

V IN =0V

IS

2.05

A


TTSD

150

ºC

V Bopr 6V

30

k Ω

V Bopr =6 to 16V

Input voltage

GND

Truth table V IN

V O

H

H

L

L

V Bopr =6 to 16V

Input current Overcurrent protection starting current

Normal



Ropen TON

8

30

µs


TOFF

15

30

µs


6

V


V DL

0.3

V


TPLH

30

µs


TPHL

30

µs




*

1

4.5

L

1

V Z

28

mH 34

40

V

IC =5mA

Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is V B = –13V, one minute. * This driver is exclusively used for ON/OFF control.

30

Open load

Shorted load

Overheat

Normal

V IN


Surge clamp voltage

Diagnostic Function

V O DIAG

DIAG V IN V O L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L ● DIAG output will be undetermined when a voltage exceeding 25V is applied to V B terminal.

Mode

Normal



■ Circuit Current

10

■ Saturation Voltage of Output Transistor 2

50

40

) A m 5 ( q I

Ta = –40ºC

) 30 A m ( B I 20

Ta=–40ºC 25ºC

) V ( ) t a s (

25ºC

Ta = 125ºC

1

E C

V

150ºC

V B =6 to 16V

150ºC

25ºC

10

0 0

10

20

30

–40ºC

0 0

40

10

V B (V)

20

30

0

40

0

1

2

V B (V)

■ Overcurrent Protection Characteristics (Ta=–40ºC)

IO (A)


20

(Ta=25ºC)


20

(Ta=125ºC)

20

V B = 18V 15

3

V B = 18V

V B = 18V

15

15 14V

) V ( 10 O V

0

1

2

3

14V

4

0

5

5

0

1

2

3

4

0

5

0

1

2

IO (A)

■ Threshold Characteristics of Input Voltage

V B =16V IO =1A

4

5


1.0

V B =14V V IN =0V

V B =14V V IN =5V

Ta =150ºC 25ºC –40ºC

3

IO (A)


20

) V ( 10 O V

8V

5

IO (A)

15

) V ( 10 O V

8V

8V

5

0

) V ( 10 O V

14V

0.8

4

) 0.6 A m ( H I 0.4 I

) 3 A µ ( L I I 2

0.2

1

5

0

0

1

0 –50

2

0

V IN (th) (V)

50

100

0 –50

150

20

0.4

15

) 0.3 V (

) V (

L D

O

V

V 0.2

50

Ta (ºC)

100

150

0 –50

V O

10

V DIAG

5

0.1

0

V B =14V V DIAG =5V IO =10mA

V B =14V IDIAG =2mA

1

150


0.5 V B =14V

) A m (

100

Ta (ºC)


2

0 –50

50

Ta (ºC)

■ Output Terminal Leak Current

k a e l O I

0

0 0

50

Ta (ºC)

100

150

0

50

100

150

200

Ta (ºC)

31


External Dimensions

Features diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● Built-in Zener diode ● TO220 equivalent full-mold package not require insulation mica

(unit: mm)

● Built-in

4.2 ±0.2

3.2 ±0.2 10 ±0.2

2.8 ±0.2

2 . 0

2 . 0

±

4

±

9 . 7 3 . 0

±

9 . 6 1

x a m 0 2

2.6 ±0.1

a b

2 . 3 . 0 0 + –

9 . 2

0.94 ±0.15 R-end


Symbol

(Ta=25ºC) Ratings

Unit


V B

–13 to +40

V


V IN

–0.3 to V B

V


V DIAG

6

V

Collector-emitter voltage Output current Power Dissipation

V

IO

2.5

A

PD1

22

W

With infinite heatsink (Tc=25ºC) Stand-alone without heatsink

1.8

W

Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

0.45–0.1

±

• 4 = 6.8

4

1. GND 2. V IN 3. V O 4. DIAG 5. V B

Refer to "Surge clamp voltage" in

V B –V Z

5 . 0

+0.2

+0.2

0.85 –0.1 P1.7 ±0.1

V CE

PD2 Junction temperature

Conditions


6 . 3

±0.6


(Forming No. 1123)



Symbol


V Bopr


Input current

typ

6.0 5

V IH

Output OFF

V IL

Output ON

I IH

Output OFF

I IL


Thermal protection starting temperature Open load detection resistor Output transfer time


–0.3

*

1

V

12

mA V V


2

mA

V CEO =16V, V IN =0V

V B

V

V Bopr =6 to 16V

–0.1

mA

V IN =0V

IS

2.6

A


TTSD

150

ºC

V Bopr 6V

30

k Ω

V Bopr =6 to 16V

TON

8

30

µs


TOFF

15

30

µs


6

V


V DL

0.3

V


TPLH

30

µs


µs


30 1

V Z

28

mH 34

40

V

d a o L

1

GND

Truth table V IN

V O

H

H

L

L


Open load

IC =5mA

Shorted load

Overheat

V IN V O DIAG

Mode Normal

Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is V B = –13V, one minute. * This driver is exclusively used for ON/OFF control.

32

5.1k Ω

V Bopr =6 to 16V V IN =5V

L

V CC


mA

4.5

3 DIAG

LS-TTL or CMOS


1

TPHL

Minimum load inductance

Conditions

V

Ropen

V IN 2

4

30

0.72

2.0

Unit

0.8


max

0.3 V CE (sat)

Output ON

Surge clamp voltage

min

IO, leak

Output leak current Input voltage

Ratings

Iq


SI-5154S

(Ta=25ºC unless otherwise specified)

Open load Shorted load Overheat ● DIAG output will be


V O L H H H L L L L


undetermined when a voltage exceeding 25V is applied to V B terminal.

Normal



■ Circuit Current

10


50

40 Ta= –40ºC 25ºC 150ºC

) A m 5 ( q I

Ta = –40ºC

) 30 A m ( B I 20

) V ( ) t a s (

25ºC

Ta = 125ºC

1

E C

V

150ºC

25ºC

V B =6 to 16V 10

0 0

10

20

30

–40ºC

0 0

40

10

V B (V)

20

30

(Ta= –40ºC)

14V

) 12 V (

16

4

) 12 V ( O

V

8

4

6V

2

3

8

8V

8V

4

0

5

4

6V

0

1

2

IO (A)

3

4

0

5

6V

0

1

2

IO (A)


10

V B =14V V IN =0V

0.8

4

) 0.6 A m ( H I I 0.4

) 3 A µ ( L I I 2

0.2

1

15

5

5 V B =14V V IN =5V

Ta =125ºC 25ºC –40ºC

4

■ Input Current (Output OFF)

1.0

V B =16V IO =1A

3

IO (A)


20

O

14V

14V

8V

V

V B = 18V

O

V

8

(Ta=125ºC)

20

) 12 V (

O

3


16

1

2

V B = 18V

16

) V (

(Ta=25ºC)

20 V B = 18V

0

1

IO (A)


20

0

0

V B (V)


V

0

40

5

0

0

1

0 –50

2

0

V IN (th) (V)

50

100

0 –50

150

20 V B =14V IDIAG =2mA

0.4

) V (

L D

O

V

V 0.2

50

Ta (ºC)

100

150

0 –50

V O

10

V DIAG

5

0.1

0


15

) 0.3 V (

0 –50

150


0.5 V B =14V

1

100

Ta (ºC)


2

k a e l O I

50

Ta (ºC)


) A m (

0

0

50

Ta (ºC)

100

150

0

0

50

100

150

200

Ta (ºC)

33


External Dimensions


diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent and thermal protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed ● TO220 equivalent full-mold package not require insulation mica

(unit: mm) 4.2 ±0.2

3.2 ±0.2 10 ±0.2

2.8 ±0.2

2 . 0

±

4

2 . 0

±

9 . 7 3 . 0

±

9 . 6 1

x a m 0 2

2.6 ±0.1

a b

2 . 3 . 0 0 + –

9 . 2

0.94 ±0.15


R-end

(Ta=25ºC)

Symbol

Ratings

Unit

Conditions


V B

–13 to +40

V


V IN

–0.3 to V B

V


V DIAG

6

V

V CE

40

V

IO

2.5

A

PD1

22

W


PD2

1.8

W


Collector-emitter voltage Output current Power dissipation Junction temperature

Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–40 to +150

ºC

P1.7 ±0.1

5 . 0

+0.2

+0.2

0.85 –0.1

0.45 –0.1

±

6 . 3

4 ±0.6

• 4 = 6.8

1. GND 2. V IN 3. V O 4. DIAG 5. V B


(Forming No. 1123)



Symbol


V Bopr

Quiescent circuit current Saturation voltage of output transistor Output leak current Input voltage

Input current

(Ta=25ºC unless otherwise specified) Ratings min

typ

6.0

Iq

max 30

5

V CE (sat)

12

mA V

2


V

V Bopr =6 to 16V

V

Output OFF

V IL

–0.3

0.8

V

Output ON

IIH

1

mA

V IN =5V

Output OFF

IIL

–0.1

mA

V IN =0V

IS

2.6

A


TTSD

150

ºC

V Bopr 6V

30

k Ω

V Bopr =6 to 16V

Open load detection resistor Output transfer time

Ropen

DIAG output voltage


V Bopr =6 to 16V

TON

8

30

µs

V Bopr =14V, IO =1A

TOFF

15

30

µs

V Bopr =14V, IO =1A

6

V


V DL

0.3

V


TPLH

30

µs

V Bopr =14V, IO =1A

µs

V Bopr =14V, IO =1A

V DH

4.5

TPHL L

30 1

d a o L

mH


GND

Truth table

V CEO =16V, V IN =0V

V B

temperature

5.1k Ω

1


mA

2.0

Thermal protection starting

V CC

DIAG


V IH

current

LS-TTL or CMOS

PZ

3

4

Output ON

Overcurrent protection starting

V IN 2

Conditions

V

0.3 0.72

IO, leak

Unit

SI-5155S

V IN

V O

H

H

L

L


Open load

Shorted load

Overheat

Normal

V IN V O DIAG

Mode Normal Open load Shorted load Overheat ● DIAG


V O L H H H L L L L


output will be undetermined when a voltage exceeding 25V is applied to V B terminal.

34



■ Circuit Current

10


50

40 Ta= –40ºC 25ºC 150ºC

) A m 5 ( q I

Ta = –40ºC

) 30 A m ( B I 20

) V (

25ºC

) t a s (

Ta = 125ºC

1

E C

V

150ºC

25ºC

V B =6 to 16V 10

0 0

10

20

30

–40ºC

0 0

40

10

V B (V)

20

30

(Ta= –40ºC)

14V

) 12 V (

16

) 12 V (

O

4

O

V 8

4

6V

2

3

8V

8V

4

0

5

4

6V

0

1

2

IO (A)

3

4

0

5

6V

0

1

2

3

IO (A)


5

V B =16V IO =1A

V B =14V V IN =0V

V B =14V V IN =5V 4

0.8

15

) 0.6 A m (

10

5


1.0 Ta =125ºC 25ºC –40ºC

4

IO (A)


20

O

14V

14V

8V

V

V B = 18V

V 8

8

(Ta=125ºC)

20

) 12 V (

O

3


16

1

2

V B = 18V

16

) V (

(Ta=25ºC)

20 V B = 18V

0

1

IO (A)


20

0

0

V B (V)


V

0

40

) A µ ( L I I

H

I 0.4 I

3

2

5 0.2

0

0

1

0 –50

2

1

0

V IN (th) (V)

50

100

0 –50

150

20 V B =14V IDIAG =2mA

0.4

) 0.3 V (

) V (

L D

O

50

Ta (ºC)

100

150

0 –50

V O

10

V V DIAG

5

0.1

0


15

V 0.2

0 –50

150


0.5 V B =14V

1

100

Ta (ºC)


2

k a e l O I

50

Ta (ºC)


) A m (

0

0

50

Ta (ºC)

100

150

0

0

50

100

150

200

Ta (ºC)

35

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

External Dimensions

Features diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use (V CE (sat) 0.2V) ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit ● Built-in independent overcurrent and thermal protection circuit in each circuit ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed

(unit: mm)

● Built-in

31 ±0.2

Ellipse 3.2 ±0.15 • 3.8

4.8 ±0.2

24.4 ±0.2 3.2

1.7 ±0.1

±0.15

2 . 0

2 . 0

±

±

9 . 2 1

. 6 2 1 0 ± 9 . 9

a b

5 . 0

2.45 ±0.2

±

4 . 6 +0.2

+0.2

+0.2

1.15 –0.1

0.55 –0.1

0.65 –0.1

14 •P2.03 ±0.1 = (28.42)


(Ta=25ºC)

Symbol

Ratings

Unit


V B

–13 to +40

V

Drive terminal applied voltage

V D

–0.3 to V B

V


V IN

–0.3 to +7.0

V


V DIAG

–0.3 to +7.0

V

DI AG o ut pu t s ou rc e c urr en t

IDIAG

–3

mA

Conditions

31.3 ±0.2


1 23

Voltage across power suppl y

V B–O

V B –34

V

V B–D

–0.4

V

Output current

IO

1.5

A

Output reverse current

IO

–1.8

A

Electrostatic resistance

ES/A

±250

V

Power Dissipation

PD

4.8

W


Tj

–40 to +150

ºC


TOP

–40 to +115

ºC

Storage temperature

Tstg

–50 to +150

ºC

and output terminal Voltage across power suppl y and drive terminal

15

Equivalent Circuit Diagram V B

a


Symbol


V Bopr

Quiescent circuit current (per circuit) Circuit current (per circuit)

C =200pF, R =0 Ω

min

MIC

GND

Unit

a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit

16

V

0.8

1.6

mA

Lo output

IB

19.3

mA

Tj =25ºC

0.8

Hi output

V IN

3.7

Lo output

V IN

1.5

V

Hi output

IIN

–1.0

mA

Lo output

IIN

V B

V CC

V

100

5

µ A

Saturation voltage of output

V CE (sat)

transistor

V CE (sat)

1.0


IO (off)

Surge clamp voltage

V B–O


V IN =5V

V


V


2.5

5

mA

Tj =25ºC, V CEO =14V

29

34

39

V

Tj =25ºC, I C =10mA

28

34

40

V

0.4

V

IDGH Ropen

5.5

k Ω

IS

1.6

A

V O =V Bopr –1.5V

ºC

V Bopr 6V


TTSD 30

µs

IO =1A

TOFF

100

µs

IO =1A

TPLH

30

µs

IO =1A

TPHL

100

µs

IO =1A

36

Lo

1.0 0

mH 60

FLT2 8

FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15

Diagnostic Function

TON

D(ON)

SLA2501M

4

VCC =7V


Maximum ON duty

FLT1 IN2

12 IN3

Normal

V IN V O


Minimum load inductance

3 9 14 D1 D2 D3

IDGH =–2mA, V Bopr =6 to 16V


current

µ A

IN1

1 V B

IC =5mA

Leak current of DIAG output


–100

7

V IN =0V

0.2

V DL

e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit


Input voltage

Input current

FLT

Conditions

Iq

V

OUT D

max

3.0

e g

f

all circuits operating

typ

6.0

d

c

Stand-alone without heatsink,

V INth

Threshold input voltage

V IN

(V Bopr =14V, Tj= –40 to +150ºC unless otherwise specified) Ratings

b

%

Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the V IN terminal.

V DIAG

Open load

Shorted load

Overheat

Normal


Electrical Characteristics ■ Quiescent Circuit Current (single circuit) 5

■ Circuit Current (single circuit) 40


VIN = 5V

VIN = 0V

V IN = 5V V B = 6 to 16V

Ta = –40ºC 4

) A m ( q 2 I 3

Ta = 25ºC

) A m 20 ( B I

Ta =125ºC

) V (

) t a 0.5 s (

Ta = 125ºC

Ta = –40ºC

E C

V

Ta = 25ºC

10

1

0

Ta =150ºC

30

Ta = –40ºC Ta = 25ºC Ta = 125ºC

0

10

20

30

40

0

0

10

20

30

40

0

0

1

2

3

3.5

V B (V)

V B (V)

IO (A)

■ Overcurrent Protection Characteristics (Ta= –40ºC)


■ Overcurrent Protection Characteristics (Ta=125ºC) 20

20

20

V B = 14V

) V (

) V ( 10 O V

O 10

V

0

0

1

2

3

4

0

) V ( 10 O V

0

1

2

IO (A)

20

3

4

5

V B = 16V

O 10

3

4

20 V B = 14V V IN = 0V

4

) A µ ( 10 L I I

0 --50

0

V IN (V)

50

100

125

0 –50

0

Ta (ºC)


■ Output Reverse Current

V B = 14V V IN = 5V I FLT = 3 (mA)

50

100

125

Ta (ºC)

■ Thermal Protection

1.4

0.3

3

25ºC –40ºC

V

2

2

V B = 14V V IN = 0V

) A m0.5 ( H I I

1

1


1.0

I OUT = 1A

) V (

0

0

IO (A)


Ta = 125ºC

0

IO (A)

■ Threshold Input Voltage

0

V B = 14V

V B = 14V

20

10

V B = 16V IO = 10mA

1.2

V O

1.0

) V (

0.2

) 0.8 V ( F V 0.6

L D

V

0.1

) V ( 10 O V

Ta = --40ºC Ta = 25ºC Ta = 125ºC

V FLT

) V ( T 5 L F

V

0.4 0.2

0 –50

0

50

Ta (ºC)

100

125

0

0

1

2

IF (A)

3

4

0 0

60

100

160

180

Ta (ºC)

37




diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use (V CE (sat) 0.5V) ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in overcurrent protection circuits ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed

31±0.2

Ellipse 3.2 ±0.15 • 3.8

4.8 ±0.2

24.4 ±0.2

1.7 ±0.1

3.2 ±0.15

2 . 0

2 . 0

±

±

9 . 2 1

b

5 . 0

2 .

6 0 1 ± 9 . 9

a

2.45 ±0.2

±

4 . 6


(Ta=25ºC)

Symbol

Ratings

Unit


V B

–13 to +40

V


V IN

–0.3 to +7.0

V


V DIAG

–0.3 to +7.0

V

DI AG ou tp ut s our ce cu rr en t

IDIAG

3

mA

Output current

IO

1.2

A

Power Dissipation

PD

4.8

W


Tj

–40 to +150

ºC


TOP

–40 to +100

ºC

Storage temperature

Tstg

–50 to +150

ºC

+0.2

+0.2

1.15 –0.1

+0.2

0.55 –0.1

0.65 –0.1

14 • P2.03 ±0.1 = (28.42)

Conditions

31.3 ±0.2


1 23

15

Stand-alone operation without heatsink; all circuits operating

Equivalent Circuit Diagram SLA2502M The MIC is bound by the dotted lines.

8

V B

Pre. Reg.


NI1

(V Bopr =14V, Ta=25ºC unless otherwise specified)

DIAG1

2 3

Drive

CONT. 11k Ω typ.

O.C.P

DIAG DET

Parameter

Symbol


V Bopr

typ

max

6.0

Iq V INth

16 5

0.8

I IN

Hi output

Input current

min

Unit

Conditions NI2

V

I IN

Lo output

0

12

mA

3.0

V

1.0

mA

100

µ A

V IN =0V

V CE (sat)

0.5


IO (off)

2.0

GND1

V

V DL

0.3

Drive

CONT. 11k Ω typ.

O.C.P

7

4

V IN =5V V IN =0V

mA V

Leak current of DIAG output Open load detection resistor

Ropen


IS

current

100

µ A

30

k Ω

1.6

A

Out2

Pre. Reg. NI3

10 11

Drive

CONT. 11k Ω typ.

O.C.P

IO 1.0A, V Bopr =6 to 16V V O =0V, V IN =0V

9

Out3

T.S.D

NI4

14

Drive

CONT. 11k Ω typ.

13

O.C.P

DIAG DET

I DIAG =3mA GND4

IDGH

Out1

DIAG4


5

DIAG DET



6

DIAG DET

DIAG3


1 T.S.D

DIAG2

Quiescent circuit current (per circuit) Threshold input voltage

Ratings

15

12

Out4

V DIAG =5V

Bopr –1.9V V O =V

TON

8

30

µs

IO =1A

TOFF

15

30

µs

IO =1A

TPLH

10

30

µs

IO =1A

TPHL

15

30

µs

IO =1A

[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection


Note: * The rule of protection against reverse connection of power supply is V B = –13V, one minute (all terminals except V B and GND should be open).

V B

Out

Diagnostic Function

SLA2502M IN

PZ

D1

V CC DIAG 5.1k Ω

GND

V B

d a o L

3.0V

GND

GND

V IN

0.8V

Truth table

V OUT SHORT Is

OPEN OPEN

OVER VOLTAGE

V IN

V O

H

H

L

L

GND

TSD

Note 1: A pull-down resistor (11k Ω typ.) is connected to the IN

IO

terminal. V OUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They

GND V DIAG

must be shorted at a pattern near the product. Normal

Shorted load

Open load

Overvoltage

Overheat

ERROR SIGNAL for CPU

38


Electrical Characteristics ■ Circuit Current (single circuit)

■ Circuit Current (4 circuits)

60

■ Saturation Voltage of Output Transistor

200

(V B =14V)

1.0

Ta = –40ºC

50

V B 150

25ºC

40

) A m 30 ( B I

25ºC

) V (

125ºC

V

) A m100 ( B I

125ºC

20

Ta = –40ºC

V IN =0V

Ta =

25ºC

125ºC

) t a 0.5 s (

–40ºC

E C

50

10 V IN =0V 0 0

10

20

30

40

0 0

46

10

20

V B (V)

30

40

0 0

46

1

V B (V)

■ Overcurrent Protection Characteristics (Ta=–40ºC)


20

3

V B = 18V 15

V B =14V V IN =0V

Ta =

15

) V 10 ( O V

125ºC

25ºC –40ºC

2

) A µ ( L I I

) V ( 10 O V

14V

3

IO (A)

■ Threshold Input Voltage

20

2

1 5

5

6V

0 0

1

2

3

0 0

4

1

IO (A)

2

0 –50

3

50

V IN (V)

V B =14V IDIAG =3mA

Ta = –40ºC 25ºC

) 0.3 A m ( H I 0.2 I

V IN =0V

20

V B =14V

Ta =–40V 25V 125V

0.2

) A m 10 ( q I

) V ( 125ºC

150

■ Quiescent Circuit Current (dual circuit)

0.3

0.5

100

Ta (ºC)


■ Input Current (Output Hi)

0.4

0

L D

V 0.1

0.1

0 0

V O shorted V O open 1

2

3

4

5

6

0 –50

0

V IN (V)

50

100

0 0

150

V

15

25ºC

) 0.9 A m (

) 10 Ω k (

125ºC

K 0.8 A E L O I

5

46

Ta = –40ºC

1.0

TSD V B =14V RL =1.3k Ω

40

■ Open Load Detection Resistor

1.1

10

30

V B (V)

■ Output Terminal Leak Current (V O =0V)

15

1 O

20

Ta (ºC)


) V (

10

Ta = 125ºC

N E P O

R

0.7

25ºC 5

–40ºC

0.6 0

0.5 0

50

100

Ta (ºC)

150

200

0 5

10

15

V B (V)

20

25

5

10

15

20

V B (V)

39

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003



diagnostic function to detect short and open circuiting of loads and output status signals ● DMOS 2ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent and thermal protection circuits

12.2±0.2 +0.1

10.5±0.2

1.0 –0.05

16

Fin thickness

9

2 . 0 ±

5 . 7


2 . 8 . 0 0 + –

0 . 2

(Ta=25ºC)

Symbol

Ratings

Unit


V B

35

V


V IN

–0.3 to 7

V

IIN

5

mA

V DG

–0.3 to 7

V

1

Conditions

8 +0.15

1.27±0.25

0.4 –0.05

2 . 0 ±

Input terminal current DG terminal voltage DG terminal current

5 . 2

I DG

5

mA

V DS

V B –45

V

Output current

IO

1.8

A

Power dissipation

PD

2

W

Source to drain Di forward current

IF

0.8

A

Tch

150

ºC

Drain to source voltage

Channel temperature Operating temperature

TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

+0.15

0.25–0.05

Block Diagram (for one channel) V B

Ta=25ºC Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG


Symbol


V B (opr)

DG Logic

(V B=14V, Ta=25ºC unless otherwise specified) Ratings min

typ

max

Unit

Open/Short Sense

Conditions GND

5.5

35

Iq

Quiescent circuit current Output ON resistance

RDS (ON) IO, leak

Output leak current Input threshold Output ON voltage Output OFF

OUT

V

1

mA

200

mΩ

IO=1A

300

mΩ

IO=1A, Ta=80ºC

50

100

µ A

V IHth

1.4

2.0

3.0

V

V ILth

1.0

1.8

V IN=0V, V OUT=0V


V OUT=0V

Ta= –40 to +105ºC 7,8

Ta= –40 to +105ºC

V

OUT1

15,16

Output ON

IIH

Output OFF

IIL


IS

Inpup current

1.9

ILim

Internal current limit Thermal shutdown operating temperature

Load open detection threshold voltage

*1


TTSD Vopen

Low level DG output voltage DG output transfer time

*1

200

µ A

V IN=5V

12

µ A

V IN=0V

(2, 3) 9

A

V OUT =V O –1.5V

(10,11)

3 5

155

A

165

1

ºC V

TON

70

140

µs

RL=14Ω, V O= –5V

TOFF

35

90

µs

RL=14Ω, V O •10%

20

µ A

0.15

0.5

V

TPLH

70

140

µs

TPHL

45

120

µs

Parameter Power supply voltage

min

max

5.5

16

Unit

5V d

5 Vin 2 13

4

(7V max)

12

4

5.5

V

V IL

–0.3

0.9

V

G D

1

A

IO

IDG=1.6mA

Timing Chart VIN ON

VIN OFF Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

VOUT

Wave Form

Internal current limit TSD ON TSDOFF

V IN High inpidance

V OUT –5V

V OUT • 10% TON V DG • 90% V DG • 10%

V DG

40

RIN

10

20

k Ω

RDG

10

20

k Ω

Mode

TOFF

Normal DG output transfer time

G D

R R

V DG=5.5V

V OUT

TPLH

TPHL

d a o L

GND


V IH

a o L

DG2

14

RIN

DG

V

5V

DG1

6

IOUT

Ratings

OUT2

IN and R DG are needed to protect CPU and SPF5003 in case of reverse * Rconnection of V B terminal. Make V B of 1Pin and 9Pin short from the fin to be plated by solder. *

* 1. Transient time is showed Wave Form below.

Recommended Operating Conditions (for one channel)

SPF5003

RIN

C P U

4.5

V DGL

V B

Vin 1 (7V max)

V OUT=0V

3

1.5

I DG

DG leak current

Note:

70

Open load Shorted load Overheat

V IN H L H L H L H L

DG H L H H L L L L

V O H L H H L (Limiting) L L L

Normal

TSD Overheat

41


External Dimensions



(unit: mm)

17.28±0.2 +0.1

15.58±0.2

1.0–0.05

24

Fin thickness

13

3 . 0

2 . 0

a

±

5 . 0 1

±

5 . 7

b


Symbol

Ratings

Unit

V B

35

V


V IN

–0.3 to 7

V

IIN

5

mA

V DG

–0.3 to 7

V

DG terminal voltage DG terminal current

IDG

5

mA

V DS

V B –45

V

Output current

IO

2.5

A

Power dissipation

PD

2.7

W


IF

0.8

A

Tch

150

ºC


Channel temperature

0 . 2

(Ta=25ºC)


Input terminal current

2 . 8 . 0 0 + –


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

Conditions

1

12 +0.15

1.27±0.25

0.4 –0.05

2 . 0 ±

5 . 2

+0.15

0.25–0.05



Ta=25ºC Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Current Limit

Charge Pump

Chopper

DG


Symbol


V B (opr)

DG Logic


typ

max

Unit

Open/Short Sense

Conditions GND

5.5

35

Iq

Quiescent circuit current Output ON resistance

RDS (ON)

Output leak current

IO, leak

50

Output ON

V IH

2.0

Output OFF

V IL

1

mA

150

mΩ

IO =2A

250

mΩ

IO =1A, Ta=80ºC

V IN=0V, V OUT=0V

µ A

3.0

OUT

V

V


V OUT=0V

Ta= –40 to +105ºC

Input voltage Inpup current

1.0


IS

2.6

ILim

Internal current limit Thermal shutdown operating temperature

Load open detection threshold voltage Output transfer time

TTSD

V

70

I IH

Output ON

1.8

10 155

Vopen

165

Low level DG output voltage DG output transfer time

µ A

V IN=5V

A

V OUT =V O –1.5V

A

V OUT=0V

V B

V µs

TOFF

60

µs µ A

V DGL

0.15

V

TPLH

70

µs

TPHL

45

µs

DG1

24

5V d

23 Vin 2

11

21

9

(7V max)

GND G D

IDG =1.6mA

Timing Chart VIN OFF Normal

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

Parameter

Internal current limit

max


5.5

16

V

V IH

4

5.5

V

V IL

–0.3

IO

VOUT

Unit

min

TSD ON

IOUT

TSDOFF

DG

High inpidance

0.9

V

1.15

A

Normal

Mode

RIN

10

20

k Ω

Open load

RDG

10

20

k Ω

Shorted load Overheat

42

G D

R R

RIN

VIN ON

Ratings

d a o L

12

V B of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder.

V DG=5.5V

VB

Recommended Operating Conditions (for one channel)

a o L

DG2

(16,17,18)

C P U

OUT2 5V

SPF5004

(4,5,6) 13

Vin 1 (7V max)

3

20

1

RIN

165

OUT1

14,15

ºC

TON

I DG

DG leak current

2,3

Ta= –40 to +105ºC


DG H L H H L L L L


Normal

TSD Overheat

43


External Dimensions

Features

(unit: mm)

17.28±0.2

● Built-in


+0.1

15.58±0.2

1.0–0.05

24

Fin thickness

13

3 . 0

2 . 0

a

±

5 . 7

±

b (Ta=25ºC)

Symbol

Ratings

Unit


V B

35

V


V IN

–0.3 to 7

V

IIN

5

mA

V DG

–0.3 to 7

V

Input terminal current DG terminal voltage DG terminal current

IDG

5

mA

V DS

V B –45

V

Output current

IO

1.8

A

Power dissipation

PD

2.7

W


IF

0.8

A

Tch

150

ºC


Channel temperature

5 . 0 1

0 . 2


2 . 8 . 0 0 + –


TOP

–40 to +105

ºC

Storage temperature

Tstg

–40 to +150

ºC

1

Conditions

12 +0.15

1.27±0.25

0.4–0.05

2 . 0 ±

5 . 2

+0.15

0.25–0.05



Ta=25ºC, all circuit operating Thermal Protect

Bias

Clamp Input Logic

IN

Lavel Shifting

Current Limit

Charge Pump

Chopper

DG


Symbol


V B (opr)

DG Logic


typ

max

Unit

Open/Short Sense

Conditions GND

Output ON resistance

RDS (ON) IO, leak

1

mA

200

mΩ

IO =1A

350

mΩ

IO =1A, Ta=80ºC

50

100

µ A

Output ON

1.4

2.0

3.0

V

Output OFF

V ILth

1.0

1.8

Output ON

I IH

Output OFF

IIL


IS

V

70

1.9

V IN=0V, V OUT=0V


V OUT=0V

Ta= –40 to +105ºC 1

Ta= –40 to +105ºC

5,6

OUT1

13 V B

10,11

OUT2

20,21

OUT3

200

µ A

V IN=5V

12

µ A

V IN=0V

3

A

V OUT =V O –1.5V

5

A

V OUT=0V

ºC

RDG

RIN

Internal current limit

ILim

Thermal shutdown operating temperature

TTSD

155

165

Vopen

1.5

3

4.5

V

TON

70

140

µs

RL=14Ω, V OUT=V B –5V

TOFF

35

90

µs

RL=14Ω, V B •10%

20

µ A

Load open detection threshold voltage

OUT

V

V IHth

Output leak current

Inpup current

35

Iq


Input threshold voltage

5.5

SPF5007

9

DG2 GND1 G ND 2 G ND 3 2 7 17

IN1 3

IN2 8

IN3 18

5V

4

DG1

d a o L

19

DG3

d a o L

d a o L

RDG RDG

RIN

C P U

RIN

Output transfer time DG leak current

I DG

Low level DG output voltage

V DGL

0.15

0.5

V

TPLH

70

140

µs

TPHL

45

120

µs

V DG =5.5V IDG =1.6mA

IN and R DG are needed to protect CPU and SPF5007 in case of reverse * Rconnection of VB terminal. Make V B of 1Pin and 13Pin short from the fin to be plated by solder. *

Timing Chart

DG output transfer time VIN ON

VIN OFF Normal

VB

VO open

Normal

Open load

OCP

Normal

Normal Shorted load

VIN

Recommended Operating Conditions (for one channel) Parameter

Internal current limit TSDON

IOUT

Ratings

Unit

TSD OFF

min

max


5.5

16

V

V IH

4

5.5

V

V IL

–0.3

0.9

V

Normal

1

A

Open load

IO

44

VOUT

DG

High inpidance

Mode

RIN

10

20

k Ω

Shorted load

RDG

10

20

k Ω

Overheat


DG H L H H L L L L


Normal

TSD Overheat

45

High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017

External Dimensions

Features ● Internal

14.74±0.2

● High

current sense resistor accuracy current monitor output (sample & hold function) ● Built-in overcurrent and thermal protection circuits

13.04±0.2

(unit: mm)

+0.1

1.0 –0.05

20

Fin thickness

11

a

3 . 0

2 . 0

±

5 . 0 1

±


5 . 7

b

(Ta=25ºC)

2 . 0 ±

Parameter Power supply voltage 1

Symbol

Ratings

Unit

V B

0 to 32

V

Power supply voltage 2

V cc

–0.5 to 7.0

V


V B

0 to 40

V

Current sensing voltage Output terminal voltage Input terminal voltage

0 . 2

Conditions

1

Power dissipation

–0.8 to 6

Vsense–

Vsense+±Io • Rsense

V OUT

–2 to 32

V

–0.5 to 7.0

V

IOUT

2.0

A

PD

2.4 to 5.0

W

V PWM

5 . 2

Tstg

–40 to +150

°C

Channel temperature

Tch

150

°C

a) Part No. b) Lot No.

Block Diagram (for one channel) Vcc

Depends on surface-mount board pattern

Min. operating power supply voltage

V B min

V B

17 clamp

Operating power supply voltage 1

V B


V CC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2 PWM terminal input voltage

(V B=14V, Ta=25ºC unless otherwise specified) – One circuit equivalent

typ

14

Hold terminal input voltage

70


Current sensing resistance

Minimum operation of OUT terminal.

V

*1

V

*2

7.2

mA

Vcc =5V, V PWM =0V, One circuit equivalent

0.2

mA

Vcc = 5V, V PWM = 0V

V

Vcc = 5V

16

110

70

Sense–

4

6

C

LG

Standard Connection Diagram *3

110

µ A

Vcc = 5V, V PWM =5V, Act ive H * 3

0.14

Ω

IOUT = 1A

0.21

Ω

IOUT = 1A, T a = 125°C

0.21

Ω

IOUT = 1A

1k Ω

Rsense

0.25

Ω

IOUT = 1A, T a = 125°C

0.01 µF

*4


Ttsd

150

°C

0.2

1.2

A

*1

0.2

V

Io = 0A, Vcc = 5V

0.488

0.500

0.512

V

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

2.925

3.000

3.075

V

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

5

mA

Io = 1A, Vcc = 5V, V SH = 0V

mA

Io = 1A, Vcc = 5V, V SH = 5V

ISH –6 ton

15

µs

toff

15

µs

V CC

V B

Output rise time

t r

100

µs

Output fall time

tf

50

µs

Io =0.5A, Vcc = 5V

2 3

17

5

t sh

650

µs

Current monitor output delay time

tshd

1

µs

Hold time after inputting hold

t shh

2

µs

Sense+

Hold

Sense–

70

µs

S/H settling time

t stt

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

80

µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125 °C

19 18 20

D1

S/H

5.1 k Ω

LG

C

6

4

D2

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

Timing Chart Ordinary operation (auto hold)

Thermal protection

Ordinary operation (external hold)

V PWM

Icoil

*1 5 0 0 to 6 50 usec

Io = 0.5A, Vcc =5V, C1 = 0.033 µF

OUT

SFP5017

PWM

C1

VS/H

Current monitor output hold time

500

Controlling microcomputer CPU

Vout

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k Ω typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

46

20

S/H

5

Vcc = 5V

A


+ –

S/H

V

3.0

Current monitor output current

lamp 70k Ω

Sense R

1

RDSon

V SH

Sense+

18

CMOS Logic

Vcc = 5V, V PWM =5V, Act ive H

Is

Current monitor output voltage

OUT

1.5

IHold H

Io

19

3


Operation circuit for current monitor output

S

PWM

µ A

3.5

V Hold L Hold terminal input current

OCP

Hold

1.5

IPWMH V Hold H

V

max

3.5

V PWML PWM terminal input current

Conditions

5.0

Iqvcc V PWMH

TSD

Sense MOS

70k Ω

Unit

6 10

D

Charge Pump

2

Ratings min

SFP5017

1

OSC


+0.15

0.25–0.05

V

Storage temperature

Symbol

2 . 0 ±

Vsense+

Parameter

0.4 –0.05

V B terminal, t =1 min

V Hold Output current

10 +0.15

1.27±0.25

*2

*1 5 0 0 t o 65 0 usec

VHold

Truth table V PWM

L

H

V OUT

L

H

Overcurrent protection

Ordinary operation (auto hold)

47

High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018

External Dimensions

Features ● Internal

current sense resistor accuracy current monitor output (sample & hold function) ● Built-in overcurrent and thermal protection circuits

(unit: mm)

12.2±0.2

● High

+0.1

10.5±0.2

1.0 –0.05

16

Fin thickness

9

2 . 0 ±


5 . 7

(Ta=25ºC)

2 . 8 . 0 0 + –

Symbol

Ratings

Unit

Conditions


V B

0 to 32

V

1


V cc

–0.5 to 7.0

V

1.27±0.25


V B

0 to 40

V

0 . 2

8 +0.15

0.4 –0.05

2 . 0 ±

Vsense+

–0.8 to 6

Vsense–

Vsense+±Io • Rsense

V OUT

–2 to 32

V

–0.5 to 7.0

V

IOUT

2.0

A

PD

2.0

W

Storage temperature

Tstg

–40 to +150

°C

Channel temperature

Tch

150

°C

Current sensing voltage Output terminal voltage Input terminal voltage

V PWM

5 . 2

V B terminal, t =1 min

+0.15

0.25–0.05

V

V Hold Output current Power dissipation

Block Diagram (for one channel) Vcc

Depends on surface-mount board pattern

2

V B

11 clamp

OSC


(V B=14V, Ta=25ºC unless otherwise specified)

D

Charge Pump TSD

S

Sense MOS

OCP

14

PWM 3

Parameter Min. operating power supply voltage

Symbol V B min


V B


V CC

Quiescent circuit current 1

Iqvb

Quiescent circuit current 2 PWM terminal input voltage

min

typ

14

16

5.0

Hold

70

70k Ω

Minimum operation of OUT terminal.

V

*1

V

*2

mA


0.2

mA


V

Vcc = 5V

110

lamp

4

Sense R

+ –

15 Sense –

S/H

S/H

6

5

7

C

LG


1.5

IPWMH

13

CMOS Logic

Conditions

7.2

3.5

V PWML PWM terminal input current

Unit V

Iqvcc V PWMH

max

6 10

Sense+

70k Ω

Ratings

OUT

*3

µ A

Vcc = 5V, V PWM =5V, Act ive H

V

Vcc = 5V

110

µ A

Vcc = 5V, V PWM =5V, Act ive H * 3

0.14

Ω

IOUT = 1A

0.21

Ω

IOUT = 1A, T a = 125°C

4 6

2

Hold terminal input voltage

V Hold H

3.5

V CC

V Hold L Hold terminal input current Output ON resistance

Current sensing resistance

70

RDSon

Rsense

0.21

Ω

IOUT = 1A

0.25

Ω

IOUT = 1A, T a = 125°C

Is

3.0

A


Ttsd

150

°C

Current monitor output voltage

Current monitor output current

Io

V SH

0.2

1.2

A

0.2

V

Io = 0A, Vcc = 5V

0.488

0.500

0.512

V

Io = 0.2A, Vcc = 5V

1.219

1.250

1.281

V

Io = 0.5A, Vcc = 5V, Ta = –40 to 140°C

2.925

3.000

3.075

V

Io = 1.2A, Vcc = 5V, Ta = –40 to 140°C

5

mA

Io = 1A, Vcc = 5V, V SH = 0V

mA

Io = 1A, Vcc = 5V, V SH = 5V

ISH ton

15

µs

toff

15

µs

Output rise time

t r

100

µs

Output fall time

tf

50

µs

Io =0.5A, Vcc = 5V

1k Ω 0.01 µF

t sh

650

µs

Current monitor output delay time

tshd

1

µs

Hold time after inputting hold

t shh

2

µs

Sense+

Hold

Sense–

70

µs

S/H settling time

t stt

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF

80

µs

VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033µF, Ta = 125 °C

14 13 15

D1

S/H

5.1 k Ω

LG

C 5

7

D2

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (–0.8V)

Timing Chart Ordinary operation (auto hold)

Thermal protection

Ordinary operation (external hold)

V PWM

Icoil

*1 5 0 0 to 6 50 usec

Io = 0.5A, Vcc =5V, C1 = 0.033 µF

OUT

SFP5018

PWM

C1

VS/H

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k Ω typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

48

3

Vout

Current monitor output hold time

500

Controlling microcomputer CPU

*4 *1

–6 Output transfer time

11

1.5

IHold H


Operation circuit for current monitor output

V B

*2

*1 5 0 0 t o 65 0 usec

VHold

Truth table V PWM

L

H

V OUT

L

H

Overcurrent protection

Ordinary operation (auto hold)

49

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

External Dimensions

Features ● DMOS

4ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent, overvoltage and thermal protection circuits

12.2 ±0.2 +0.1

10.5 ±0.2

1.0 –0.05

16


Fin thickness

9

2 . 0

(Ta=25ºC)

Symbol

Ratings

Unit


V B

40

V

Output terminal voltage

VOUT

37

V


V IN

–0.5 to +7.5

V

(unit: mm)

±

5 . 7

Conditions

*

1

2 . 8 . 0 0 + –

0 . 2

8 +0.15

1.27±0.25

0.4–0.05

2 . 0 ±

Output current

IO

Power Dissipation

1.8

5 . 2

A

PD

2

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC

Output avalanche capability

E AV

50

mJ

+0.15

0.25 –0.05

Single pulse

Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

Equivalent Circuit Diagram V B

V OUT 1

Gate Protction

Electrical Characteristics Parameter Power supply voltage

Symbol V Bopr

Reg. REF

(V B =14V, Ta =25ºC unless otherwise specified) Ratings min

typ

5.5

max 25

Unit

OVP

Conditions

Gate Driver

TSD OCP

V

P-GND V IN 1


Iq

5

7

mA

V IN =0V (all inputs)

Operating circuit current

ICC

8

12

mA

VIN =5V (all inputs)

Input voltage

Input current

Hi output

V IN

3.5

5.5

V

Lo output

V IN

–0.5

1.5

V

Hi output

IIN

50

µ A

V IN =5V

Lo output

IIN

30

µ A

V IN =0V

0.4

0.6

Ω

0.5

0.7

Ω

50


RDS (ON)

Output clamp voltage

VOUT ( clamp )

Output leak current Forward voltage of output stage diode Overvoltage protection starting voltage Thermal protection starting temperature Overcurrent protection starting current

V B =5.5V

55

V

10

µ A

VO =37V

V F

1.6

V

IF =0.5A

40

V

TTSD

25

151

165

V IN 2

V OUT 2

V IN 3

V OUT 3

V IN 4

V OUT 4

L-GND

IO =1A

Circuit Example

V CC

ºC

2

IS

1.1

A

4

µs

12

6

TON Output transfer time

IO =1A

IOH

V B (ovp)

41

250k Ω typ

12

RL =14 Ω, I O =1A

14

TOFF

8

µs

RL =14 Ω, I O =1A

Output rise time

Tr

5

µs

RL =14 Ω, I O =1A

Output fall time

Tf

10

µs

RL =14 Ω, I O =1A

7

15

OUT 2 OU T4

5 V B

IN1 IN2 IN3

SPF5002A

IN4

CONTROL UNIT

L-GND 13

P-GND 1,9

Use L-GND and P-GND being connected.

Truth table V IN

10

OUT 1 OUT 3

V O

H

L

L

H

Timing Chart OVP

V B V OUT

V IN Normal

50

Overvoltage

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A


■ Circuit Current (single circuit)

10

10

8

10

8 Ta =–40ºC

) 6 A m ( 4

Ta =120ºC 2

0

Ta = –40ºC

Ta = –40ºC

) 6 A m ( d I 4

6 ) A m ( d 4 I

Ta = 125ºC

2

0

10

20

30

0

40

Ta = 25ºC

8

Ta = 25ºC

Ta =25ºC

q I

■ Circuit Current (4 circuits)

Ta = 125ºC

2

0

10

V B (V)

20

30

0

40

10

20

V B (V)

■ Output ON Voltage

■ Threshold Input Voltage 15

30

40

V B (V)

■ Forward Voltage of Output Stage Diode 1.5

1.0 V B =14V

10

) V (

1.0

) 0.6 V ( )

Ta =125ºC

N O ( S D 0.4

O

V

) A (

Ta =25ºC

F I

V

5

0

0.5 0.2

V O =14V IO =0.1A 0

Ta =125ºC Ta =25ºC Ta =–40ºC

0.8

Ta =–40ºC Ta =25ºC Ta =125ºC

Ta =–40ºC 1

2

0

3

0

0.5

V IN (th) (V)

1.0

1.5

2.0

IO (A)


0

0

0.5

1.0

1.5

V F (V)

■ Overvoltage Protection Starting Voltage

15

15 IO =0.1A

V B =14V

10

Ta =–40ºC Ta =25ºC Ta =125ºC

10

) V (

) V (

O

O

V

V 5

5 Ta =120ºC Ta =25ºC Ta = –40ºC

0

0

1.0

IO (A)

2.0

0

0

10

20

30

40

V B (V)

51

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

External Dimensions

Features ● DMOS

17.28 ±0.2

● Allows

15.58±0.2

4ch output ON/OFF using C-MOS logic level ● Built-in over current and thermal protection circuit and diagnostic function to detect open load ● Built-in output status signals (over current, over heat and open load)

(unit: mm) +0.1

1.0 –0.05

24

Fin thickness

13

a

3 . 0

2 . 0

±

±

5 . 7

b

Absolute Maximum Ratings Parameter Power supply voltage

Symbol

Ratings

Unit

40

V

Output terminal voltage ( DC)

V OUT

50

V

Output terminal voltage (pulse)

V OUT

Output clamping (max 70V)

V

Output current ( DC)

IOUT

±2.9

A

Output current (pulse)

IOUT

Over current protection starting current

A


V(IN, SEL, B/U)

–0.5 to +6.5

V

Diag output source current

VDIAG

6.5

V

Diag output voltage

IDIAG

5

mA

PD

2.8

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC


E AV

80

mJ

Conditions

1

12 +0.15

1.27±0.25

0.4 –0.05

2 . 0 ±

5 . 2

+0.15

0.25–0.05


Equivalent Circuit Diagram V B (7)

Gate Protection Ref

V OUT1 (4)

Reg Gate driver

V IN B/U (17) TSD

V OUT SENSE

V IN SEL (5) OUT OCP Set Latch Reset

Single pulse V IN 1 (6)

P-GND1 (1, 2)

OSC

Monitor

Symbol V B (opr)

(V B =14V, Ta = 25ºC unless otherwise specified) Ratings min

typ

5.5

max

Unit

40

V


12

mA

V B =14V , V IN=0V


Id

12

15

mA

V B =14V , V IN=5V (all inputs)

Input voltage

V IN (H)

3.5

6.5

V

V B =14V , V O=1A

(1 to 4, SEL, B/U)

V IN (L)

–0.5

1.5

V

V B =14V

Input current (single circuit)

I IN (H)

200

µ A

V B =14V , V IN=5V

(1 to 4, SEL, B/U)

IIN (L)

30

µ A

V B =14V , V IN=0V

0.18

Ω

V B=14V , IO=1A

70

V

V B =14V , IO=1A V B =14V , V O=50V

RDS (ON)


V OUT (clamp)

60

65

Output leak current

IOH

50

µ A

Forward voltage of output stage diode

V F

1.5

V

I F =1A

Output moniter threshold voltage

V th M

2

V

V B =14V

V DIAG (H) DIAG output voltage DIAG output leak current Thermal shutdown operating temperature


V DIAG2 (10)

V IN 3 (18)

P-GND3 (13, 14) V DIAG3 (15) V OUT4 (21)

V IN 4 (20)

P-GND4 (23, 24) V DIAG4 (22)

L-GND (19)

Circuit Example

6.5

V

V B =14V , V DIAG=6.5V

V DIAG (L)

0.5

V

V B =14V , IDIAG=5mA

6

I DH

10

µ A

V B =14V , V DIAG=6.5V

18

TTSD IS

6.4

P-GND2 (11, 12)

V OUT3 (16)

9


V IN 2 (8)

Conditions

Iq


151

165

ºC

3.0

V B =14V

A

V B =14V

7

8

20 17 5

V B

TON

12

µs

V B =14V , RL=14Ω, I O=1A

TOFF

8

µs

V B =14V , RL=14Ω, I O=1A

Output rise time

Tr

5

µs

V B =14V , RL=14Ω, I O=1A

Output fall time

Tf

10

µs

V B =14V , RL=14Ω, I O=1A

t DON

12

µs

V B =14V , RL=14Ω, I O=1A

t DOFF

8

µs

V B =14V , RL=14Ω, I O=1A


4

9

OUT1

OUT2

16

OUT3

21

OUT4

V IN1 V IN2 V IN3

DIAG1 DIAG2

SPF5009

V IN4

DIAG3

V INB/U

DIAG4

3 10 15 22

V INSEL LG


V DIAG1 (3)

V OUT2 (9)


19

PG1 1, 2

PG2 11, 12

PG3 13, 14

PG4 23, 24

Timing Chart Main input signal 1 V IN1 Main input signal 2 V IN2 Backup input signal V INB/U Input select signal V INSEL Power supply voltage V B Output voltage 1 V OUT1

OCP

OCP

Output current 1 IOUT1 DIAG output 1 V DIAG1 DIAG output 2 V DIAG2 Nomal

52

5 . 0 1

0 . 2

(Ta=25ºC)

V B

Power Dissipation

2 . 8 . 0 0 + –

Output 1 Output 1 Overheat Overcurrent Main mode

Output 1 Open load

Nomal

Output 1 Output 1 Overheat Over current Backup mode

Output 1 Open load

53

Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012


Features

17.28±0.2

● Output

monitor circuit (DIAG) ● DMOS 4ch output ● Allows ON/OFF using C-MOS logic level ● Built-in overcurrent, overvoltage and thermal prot ection circuits

+0.1

1.0 –0.05

15.58±0.2 24

Fin thickness

13

a

3 . 0

2 . 0

±

5 . 0 1

±

b


Symbol

±

Ratings

Unit

V B

40

V


V CC

7.5

V

40 (DC)

V

V IN

–0.5 to +7.5

V

IO

Self Limited

A

VDIAG

0 to V CC

V

PD

2.8 to 5

W

Storage temperature

Tstg

–40 to +150

ºC

Channel temperature

Tch

150

ºC


E AV

100

mJ

VO

Logic input voltage Output current Diag output voltage Power Dissipation

2 . 0

2

(Ta=25ºC)


Output voltage

5 . 7

Conditions

1

12 +0.15

1.27±0.25

0.4 –0.05

2 . 0

+0.15

±

5 . 2

0.25–0.05

*1 a: Part No. b: Lot No.


*2

V CC1-2 (7) Diag1 (5)

Single pulse V B (19)

* 1. At the clamping operation, refer to the section of V OUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate

Gate Protection

V OUT1 (3)

Reg OVP Gate driver

TSD V IN1 (4)

OCP

P. GND1 (1, 2)

Ch1


(V B =14V, Ta =25ºC unless otherwise specified) Ratings

Parameter

Symbol


V B (opr)

5.5

40

V


V CC (opr)

4.5

5.5

V

min

typ

max

Unit

Conditions

V CC3-4 (18)

Iq

4

6

mA

V B =14V , V IN=0V


Id

8

12

mA

V B =14V , V IN=5V

5.5

V

Input current

Hi output

V IN

Lo output

V IN

Hi output

IIN

Lo output

–0.5

IIN


RDS (ON)


V OUT (clamp)

Output leak current

3.5

45

50

V F

Overvoltage protection starting voltage

V B (ovp)

V

V B =14V

50

µ A

V B =14V , V IN=5V

–30

µ A

V B =14V , IO 1A

0.3

Ω

VB=14V, IO=1A, Ta=125ºC

0.2

Ω

VB=14V, IO=1A, Ta=25ºC

55

V

V B =14V , IO=1A

2.8

mA

VB=14V, VCC=5V, VIN=0V, VO=40V, Ta=25ºC

900

µ A

VB=14V, VCC =5V, VIN=0V, VO=14V, Ta=25ºC

1.6

V

40

V

Overvoltage protection hysteresis voltage V B (ovp•hys) Thermal shutdown operating temperature Overcurrent protection operating current

TTSD

L. GND (6)

Circuit Example

IS

8

V ºC

V B =14V

6

A

V B =14V , Ta=–40ºC

6

A

V B =14V , Ta=25ºC

5

A

TON

12

µs

TOFF

8

µs

Output rise time

Tr

5

µs

Output fall time

Tf

10

µs


18

7

19

VCC1-2 VCC3-4 VB

I F=1A

165

151

Ch4

Diag4 (20) V OUT4 (22) P. GND4 (23, 24)

V IN4 (21)

V CC

25

Ch3

Diag3 (17) V OUT3 (15) P. GND3 (13, 14)

V IN3 (16)

V B =14V , V O=1A

1.5

IOH

Forward voltage of output stage diode

V OUT2 (10) P. GND2 (11, 12)

Ch2


Input voltage

Diag2 (8) V IN2 (9)

Input signal

V IN1 V IN2 V IN3 V IN4

4 9 16 21

3

10

15

Diag1 Diag2 Diag3 Diag4

SPF5012

L-GND

22

VOUT1 VOUT2 VOUT3 VOUT4 5 8 17 20

Diag output

P-GND1 P-GND2 P-GND3 P-GND4

6

1, 2

11, 12

13,14

23, 24

Truth table

V B =14V , Ta=125ºC

V IN

V O

H

L

L

H

Short L-GND and P-GND in a pattern near the product.

V B=14V , RL=14Ω, I O=1A

Output-diag voltage ratio Diag output clamping voltage

r a (DIAG) V DIAG (clamp)

0.195

0.2

0.205 4.85

VB =14V, VO =1 to 14V, Rdiag =500kΩ V

Timing Chart

VB=14V , VCC =5V, VO =40V

OVP

V B V OUT

V IN Normal

54

Overvolt age

Overheat

Overcurrent

* Self-excited frequency is used in the overcurrent protection.

55

Stepper-motor Driver ICs

SLA4708M

External Dimensions

Features ● High

output breakdown voltage of 50V output current of 1.5A ● Built-in overcurrent, overvoltage and thermal protection circuits ● Low standby current of 50 µ A

31.0 ±0.2

● Affluent

3.2±0.15

Ellipse 3.2±0.15 • 3.8

24.4 ±0.2

4.8±0.2 1.7±0.7

16.4±0.2

2 . 0 ±


(unit: mm)

a b

Symbol

Ratings

Unit


V S

35

V

Breakdown voltage

V O

50

V

Input voltage

V IN

–0.3 to +7

V

11•P2.54 ±0.7=27.94 ±1.0

IO, AVE

1.5

A

31.5max

Diagnostic output sink current

IDIAG

10

mA

Diagnostic output withstand voltage

IDIAG. H

7

V


Top

–40 to +85

ºC

Storage temperature

Tstg

–40 to +150

ºC

PD

3.5 (Ta=25ºC)

W

Output current

Power Dissipation

Conditions

x a m 8 . 0

2 .

0 0 . ± 2 x . 6 0 . 0 a ± 1 3 m 1 9 . 5 9 . ) 8 4 . 0 1 ( 7 . n 2 i m Pin 1 5 . 9

(Ta=25ºC)

s s e n k c i h t e t a l p s d n i a s e e L r

12 +0.2

0.85 –0.1

1.2±0.15

+0.2

0.55 –0.1

2.2±0.7

1.45 ±0.15


1 2 3 4 5 6 7 8 9 10 11 12

Without heatsink

Standard Circuit Diagram Electrical Characteristics Parameter

Symbol

Input voltage

V IL

(I A/A , I B/B standby)

V IH

Input current

(V S =12V, Ta=25ºC) C

Ratings min

typ

max 0.8

Unit

V

I IL

–0.8

I IH

50

mA

V IN =0.4V

µ A

V IN =2.4V

Output leak current

1.3

V

V O.STA

1.5

V

I O.LEAK

100

µ A

V O =16V

I SD

1.8

A

Overvoltage detection

V SD

27.5

V

output Standby current

V DIAG.L I STB

0.3 50

V µ A

IO =1A, Ta =25ºC IO =1.5A, Ta =25ºC

Overcurrent detection

Saturation voltage of diagnostic

56

V O.STA

5

OUT A

IDIAG =5mA V S =12V

9

OUT A

8

OUTB

SLA4708M

1

OUT B V S 12 DIAG 3 I A/A I B/B 10

5V

Output saturation voltage

ZD

V 4

2.4

+

Conditions

2

STBY

4.7k Ω

P-GND 6

L -G ND 11

L -G ND 7 N.C.

CPU

ZD: V S <35V C 100µF (Reference)

Stepper motor

Stepper-motor Driver ICs SLA4708M

Electrical Characteristics ■ Power Supply Current Characteristics 200


20

14

Ta = 25ºC Vcc=12V

Constant (ST = 5V) 12 t n ) e r r A µ u ( S c I y l y p b p d100 u n s a r t e s w t o A P

) V ( 10 O V e 8 g a t l o v 6 t u p t u O 4

) A m ( S I t n10 a t s n o C t A

■ Saturation Voltage of Output Transistor Characteristics ) V ( 2.0 t a s V r o t s i s 1.5 n a r t t u p t u o f 1.0 o e g a t l o v n o 0.5 i t a r u t a 0 S

Common for all phases

At standby (ST = 0V) 2 0

0 0

10

20

30

Power supply voltage V S (V)

0

0

10

20

Power supply voltage V S (V)

30

35

Vcc (Vs) =16V Common for all phases Ta =25ºC

0

1.0

2.0

3.0


■ Thermal Protection Characteristics 14 Vcc (Vs) =12V VST = 5V

12 ) V ( 10 O V e 8 g a t l o v 6 t u p t u O 4

T j2

T j1

2 0 0

110

120

130

140

150

160

Junction temperature Tj (ºC)

57

2-ph Stepper-motor Driver ICs

SPF7211

External Dimensions

Features ● Low

17.28

● Built-in

output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) recovery diode ● Built-in standby function ● Built-in overcurrent and thermal protection circuits and low voltage input shutoff function ● Built-in overload and disconnection detection function

15.58±0.2

(unit: mm)

±0.2

+0.1

1.0 –0.05

24

Fin thickness

13

a

3 . 0

2 . 0

±

5 . 0 1

±

b

Absolute Maximum Ratings Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Power dissipation Junction temperature Operating temperature Storage temperature

5 . 7

2 . 0 ±

2

Symbol

Ratings

Unit

V BB V IN Io IoPeak V Flag IFlag V Rs

40 –0.3 to 15 ±0.8 ±1.0 7 3 –2 to 2 4.1 39 150 –40 to 110 –40 to 150

V V

PD Tj Top Tstg

A V mA V W

Remarks

1

12 +0.15

1.27±0.25

V IN V BB

0.4 – 0.05

2 . 0 ±

5 . 2

Tw 1mS V Flag V BB

+0.15

0.25– 0.05


For Ta =25°C * 1 For Tc (Ttab) =25 °C

°C °C °C

Note: *1: With glass epoxy + copper foil board (size 5.0• 7.4cm; t: glass epoxy =1.6mm/copper foil =18 µm)


Recommended Operation Range Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Operating temperature

Symbol

Ratings

Unit

V BB V IN Io V Flag IFlag V Rs Top

6 to 18 –0.3 to 7.0 ±0.5 0 to 7.0 0 to 1.0 –1 to 1 –40 to 110

V V A V mA V °C

Rs

Remarks V IN V BB Continuous V Flag V BB

4 2

µPC (ECU)

SPM A B t 1 B 1 t t D D D 1 0 1 1 h t e N N N u s B u 1 I 1 I P C S G G G O R V O

Main power supply current Low voltage protection operation voltage

UVLO hysteresis voltage Output leak current

Symbol IBB IBBS V UVLO V UVLOhys IoleakL IoleakH

min

Ratings typ

3.5 –100

100 0.5 0.8 1.2 1.5 1.2 1.3

Output saturation voltage VsatH

Input terminal

Input voltage Hysteresis voltage

Ph terminal

Input current

Ixx, Set terminals Input current Detect voltage

VRs

Oscillation frequency PWM frequency Ct terminal threshold voltage Ct terminal current

Overcurrent detection voltage Open detection voltage Flag terminal leak current Flag terminal saturation voltage Flag terminal current Response pulse width Set terminal Pulse rate Pulse number Flag response time

OCP operation Open operation

I/O propagation time

Thermal protection temperature Thermal protection hysteresis Thermal alarm temperature Thermal alarm hysteresis

58

V FL V FH V FGO V IL V IH V Ihys IIL IIH IIL IIH

Fosc FPWM VctL VctH Ictsink Ictsouce VocpL VocpH VocpL VocpH Vopen Ileak Flag V Flag L IFlag Tpw Tpws Fclock Pulse tocp1 tocp2 tocp3 topen1 topen2 tonH1 toffH1 tonH2 toffH2 tonL1 toffL1 tonL2 toffL2 Tj ∆Tj Talarm ∆Talarm

Rs

max 50 50 4.5

0.5

VsatL

Recovery diode forward voltage

2 1

1


3 1

0 1 2 1 D D D D A 2 2 B 2 I 2 h L N N N N t 2 s L 2 I P F G G G G u R F t u O O

1.2 0.8 2.0 0.5 –5 –5 –30 660 420 40 28.8 14.4

1.5 V BB–2.5 1.0 V BB–2.3

5 5

700 450 70 48 24 0.5 1.5 720 –120 3.0 V BB–2.0

50 740 480 90 72 36

4.2 V BB–1.7 1.85 V BB–1.5

–60 10 0.5 3 10 100 17 2.5 5.0 5.0 2.5 2.5

24 256 5.0 10.0 10.0 5.0 5.0 1.5 1.5

31 10.0 20.0 20.0 10.0 10.0

100 100 2.0 0.5 100 100 150 120

20 130 20

140

Unit

Conditions

mA µ A V V µ A µ A V V V V V V V V V V µ A µ A µ A µ A mV mV mV kHz kHz V V µ A µ A V V V V mV µ A V mA µS µS Hz — µS µS µS µS µS µS µS µS µS µS µS µS µS °C °C °C °C

In ordinary operation (no load) At sleep

V BB =40V, Vo =0V V BB = Vo =40V Io =0.5A Io =0.8A Io =–0.5A Io =–0.8A Io =0.5A Io =–0.5A Io =–0.5A

Ct 2200pF

Rs 1Ω typ (1 to 2W) IoM VRs/Rs

2-phase excitation Clock Ph1 I10, I11 Ph2 I20, I21

*1 Out voltage Out voltage V BB =5.5V V BB =5.5V Sence voltage V Flag = 7V IFlag =1mA In ordinary operation At sleep Ct =2200pF In ordinary operation; Ct =2200pF At switching the phase When Ixx shifts from L to H In ordinary operation When Ixx shifts from L to H

*2

Note: *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values.

Excitation Signal Time Chart

0 L H L H

1 H H L H

2 H H H H

3 L H H H

0 L H L H

1 H H L H

1 to 2-phase excitation Clock Ph1 I10, I11 P h2 I20, I21

VIL =0.8V VIH =2.0V Ix0 =High, Ix1 =High Ix0 =Low, Ix1 = High Ix0 =High, Ix1 =Low Ct =2200pF ±20% Ct =2200pF ±20%

V BB = 6 to 18V +

0 L H L H

1 H L L H

2 H H L H

3 H H H L

4 H H H H

5 L L H H

6 L H H H

7 L H L L

0 L H L H

1 H L L H

2 H H L H

3 H H H L

* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.

2-ph Stepper-motor Driver ICs SPF7211

Electrical Characteristics ■ Vsat Temperature Characteristics (Io=0.5A)

■ Diode V F Characteristics (I F=0.5A)

1.2

1.7 VFGO

VsatH

1 ) V ( t a s V 0.8 e g a t l 0.6 o v n o i t 0.4 a r u t a S

1.5 ) V (

VsatL

F V 1.3 e g a t l 1.1 o v d r a w r 0.9 o F

0.2

VFH VFL

0.7

0 –30 –10 10

30 50

0.5 –30 –10 10

70 90 110 130 150

Junction temperature (ºC)

■ OSC Temperature Characteristics

30 50

70 90 110 130 150


■ Ta-P D Characteristics

55

40

) z H 53 k (

FOSC

C S O

Infinite heatsink equivalent (Tc=25°C) j-tab 3.2°C/W

) W ( 30 D

P n o i t a 20 p i s s i d r e w o P 10

F y 51 c n e u q e r 49 f n o i t a l l i c 47 s O

Copper foil area (5.0•7.4mm, t=18 µm) j-a 30.5 °C/W

Ct=2200pF

45 –30 –10 10

30 50

70 90 110 130 150


0

0

25

50

75

100

125

150


59

Full Bridge PWM Control DC Motor Driver ICs

SI-5300


Features

(28.4)

● P-ch

MOS for high side and N-ch MOS for low side in one package ● Enable to drive DC ±5V ● Possible to drive a motor at the LS-TTL, C-MOS Logic level ● Guarantee Tj=Tch=150 °C ● Built-in over current protection and thermal shut down circuits ● Built-in diagnosis function to monitor and signal the state of each protection circuits ● Built-in vertical current prevention circuits (Dead t ime is defined internally.) ● No insulator required for Sanken's original package (SPM package)

4.8±0.2

2.7±0.2

2 . 0 ±

1 . 6 ) 1 5 . 4 (

a b

(R0.8) ) 4 (

(R0.8) +0.2

0.75–0.1

Parameter

Ratings

Unit

V M

40

V

IN1

–0.3 to 7

V

IN2

–0.3 to 7

V

PWM

–0.3 to 7

2±0.5

Conditions

V


Equivalent Circuit

IO

±5

A

IO (p-p)

±17

A

PW

fPWM

20

kHz

Duty=20% to 80%

Output current

V M

V M

1ms, Duty

V M

50% B

PWM control frequency

fCW

500

Hz

TSD

OCP


TOP

–40 to +85

ºC

Tj, Tch

–40 to +150

ºC

Tstg

–40 to +150

ºC

Q R

j-c

3.7

ºC/W

j-a

35

ºC/W

B

S

M

Dead Time

IN1

Storage temperature

FF

A

Pch2

OUT1

A

B

Junction and channel temperature

B

OCP

Pre-Rec

Pch1

Forward • reverse rotation switch frequency *

ECU inside V CC

PWM down edge sense

PWM

PULL-UP Resistor

OUT2 Nch1

Thermal resistance

DIAG Nch2 A

A OCP

OCP B Dead Time

IN2

Power dissipation

PD1

3.6

W

Without heatsink

PD2

33.7

W


Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20 µs (typical). Please take into account the dead time and consider the load conditions when you use the IC.

V IN

Motor supply voltage Output saturation voltage

Ratings min

typ

6

LGND

V V

I L, L

100

µ A

V M=40V

I L, H

100

IO=3A

1, 2 OUT1

V M=40V V PWM: L

H (Vth =2.5V typ)

tpHL

15 *3

µs

V PWM: H

L (Vth=2.5V typ)

10

µs

V CC

0.8

V

IO=3A

1.0

V

IO=10A

0.8

V

IO=3A

1.0

V

IO=10A

IM1

22

mA

Stop mode

IM2

22

mA

Forward and reverse mode

IM3

16

mA

Brake mode

2.0

8 LGND

4,12 PGND

Delay Capacitor 1µF

Timing Chart Forward Duty ON

Forward Duty OFF

Reverse Duty ON

Reverse Duty OFF

Stop (Free Run)

Stop (Free Run)

Br eak e

B rea ke

Therminal name IN1 IN2

V IN1=V IN2=V PWM V IN1=V IN2=V PWM

PWM

V IN1=V IN2=V PWM=0V

OUT1

µ A

V IN1=V IN2=V PWM=5V

OUT2

9 TDIAG

Pull-up Resistor 10k Ω (Open Collector)

µ A

V

M

10 DIAG

µs

V

SI-5300

7 PWM

µ A

3.0

14, 15 OUT2

CPU

IO=3A

10 *2

V IN, L

3, 5, 13 V M

6 IN1

tpLH

V IN, H

+

11 IN2

V

V F •H

Capacitor 220µF

V M=24V (2 min.)

0.3

V F •L



Conditions

0.8

Static circuit current

PGND

Battery

18

tpHL-tpLH Forward voltage characteristic of diode between drain and source

Unit

max

V, V M-V O

Output transmission time

CDIAG 1µF

A

PGND

(Unless, otherwise specified, Tj=Tch =25°C, V M =14V, I O =3A)

V, V O-PG

Output leakage current

TDIAG

Relay


DIAG CONTROL

B

A

Parameter

6 . 3

4.5±0.7

1 2 3 4 5 6 7 8 9 1 0 11 12 13 14 15


6 . 7

±

35±0.3

(Ta=25ºC)

Symbol

Motor supply voltage

±

5 . 0

+0.2

0.45–0.1

14 • P2.03±0.1=(28.42)


5 . 0

R-end

High inpidance

IIN, L

Input terminal current

–100

IIN, H

OPC start current DIAG output pulse width DIAG terminal voltage

200

IOCP

16

t DIAG

20

V D •L

A

*

ms

C=1µF (typ)

V

ID• SINK=1mA

0.3

GND

*3: Output transmission time (tpHL)

V PWM (5V)

V th V OUT GND

V OUT*0.9

OUT terminal GND tpLH

Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.

PWM terminal

Protection circuit

Return to constant action V M=2V

V M=2V V M IN1 IN2 PWM

V PWM (5V)

PWM terminal

High inpidance

IOUT (A)

*4

Note: *1: The standard value of I OCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H ➞ 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25ºC, f PWM=10kHz, V M=14V) are assumed to be max at the overcurrent state continuance time in the V M operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.

*2: Output transmission time (tpLH)

High inpidance

1

V M-OUT1 (Pch1 V DS )

V th

GND

OUT terminal V OUT *0.1 tpHL

GND

Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.

V M-OUT2 (Pch2 V DS ) V OUT1-GND (Nch1 V DS ) V OUT2-GND (Nch2 V DS ) OUT1 OUT2

*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.

60

IOUT (A) TDIAG DIAG DIAG Threminal V CC=5V Pull-up

20ms (min)

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Electrical Characteristics Characteristics ■ Output saturation voltage (Pch)

■ Output saturation voltage (Nch)

■ Forward voltage of Diode between drain and source

0.5

1.0

12

V M=14V

V M=14V

Ta=25ºC 10

0.4

0.8

Nch MOS FET

Ta=150ºC ) V 0.6 ( O V -

) V 0.3 ( G P O V • 0.2 V

Ta=150ºC Ta=85ºC Ta=25ºC

M

V • 0.4 V

Ta=–40ºC

0.2

0

8

Ta=85ºC ) A (

Ta=25ºC

D S

Ta=–40ºC

1

2

3

4

5

6

0

7

2 0 0

1

2

3

IO (A)

4

5

6

7

0

0.4

0.6

0.8

1.0

1.2

V FSD FSD (V)

■ Voltage of input terminal (Threshold voltage)

■ Current of input terminal (SINK current)

16

25

0.6

Duty on

V M=14V

V M=14V

Brake

0.5 12

Duty off ) 15 A m ( M I

0.2

I O (A)

■ Quiescent circuit current

20

Pch MOS FET

4

0.1

0

6

F I

Stop

) A m (

Ta=150ºC

) V ( O V

Ta=25ºC

8

K N I S

Ta=–40ºC

10

Ta=150ºC

0.4

Ta=85ºC Ta=25ºC

0.3

Ta=–40ºC

I

0.2 4 5

0.1

I O=0A Ta=25ºC 0

0

10

20

30

0

0

40

0

1

2

V M (V)

5

6

7

0

6

6 V M=14V

I IN1=I IN2=PWM=0V –10

5

5

Ta=150ºC Ta=25ºC

Ta=150ºC Ta=25ºC Ta=–40ºC

4

Ta=–40ºC

c r u o s

2

) V (

M –6 W P ,

G A I D

3

3

4

5

6

7

■ Thermal shut down protection

Pull-up resistance =3k Ω

) A µ ( –8 e

1

V IN1, IN1, IN2 , PWM (V)

Characteristics TDIAG – V DIAG DIAG Characteristics ■ V TDIAG

–12

2 N

4

V IN1, IN1, IN2 , PWM (V)

■ Current of input terminal (Source current)

I I ,

3

V M=10V I O=0A

4 ) V ( G A I D

3

V

V

–4

2

2

–2

1

1

1 N I I

0

0

10

20

30

0

40

0

1

V M (V)

2

3

4

5

0 100

6

V TDIAG TDIAG (V)

■ Pch MOS FET Safe Operating Area (SOA)

) W 35 (

1ms

) 10 A (

P n o i t a p i s s i D r e w o P e l b a w o l l A

10ms

T U

O I

100ms

100ms

1

1

0.3

0.3 2

10 V M-OUT M-OUT (V)

40

100

2

10 V OUT OUT -PG (V)

40

Infinite heatsink (Tc =25ºC)

D

1ms

T U

200

40 Tc=25ºC

O I

175

Characteristics ■ PD —Ta Characteristics

100 Tc=25ºC

10ms

150 Ta (ºC)

■ Nch MOS FET Safe Operating Area (SOA)

100

) 10 A (

125

100

30 25 20 15 10 5

No heatsink

0 –40 –3 –30

0

25

50

75

100

Ambient temperature temperature Ta (ºC)

61

Full Bridge DC Motor Driver ICs

SPF7301(under development)

External Dimensions

Features ● A

DMOS of low ON resistance (0.1 Ω typ) is mounted on the high and low side power elements ● Two input signals control the forward/reverse/brake of a DC motor ● Current limit and overcurrent protection circuits ● Low voltage and thermal protection, excess input detecting output and input terminal open protection

(unit: mm) +0.1

1.0 –0.05

14.74±0.2

Fin thickness

13.04±0.2 20

11 3 . 0 ±

a

5 . 0 1

2 . 0 ±

b

Absolute Maximum Ratings Ratings Parameter

Symbol

Ratings

Unit

V B V IN IN1,V IN IN2 V EN EN V DI DI Io IoPeak V DIAG DIAG IDIAG PD1 PD2 Tj Top Tstg

–0.3 to 36 –0.3 to 6 –0.3 to 12 –0.3 to 6 ±7 ±15 –0.3 to 6 –3 39 4 –40 to 150 –40 to 105 –40 to 150

V V V V A A V mA W W °C °C °C

j-c

3.2

°C/W

j-a

31

°C/W

DIAG output current DIAG inflow current Power dissipation Junction temperature Operating temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air)

2

1

Remarks

10 0.4 –0.05

5 . 2 a) Part No. b) Lot No.

1kHz, Duty 1%, Pulse 10µS DIAG terminal sink current With an infinite heatsink mounted

*1

Standard Circuit Diagram V B

Unit

Main power supply voltage DI terminal input voltage Input terminal input voltage Output current DIAG terminal voltage Operating temperature

V B V DI DI V INx INx Io V DIAG DIAG Top

8 to 18 –0.3 to 5.3 –0.3 to 5.3 ±1 –0.3 to 5.3 –40 to 105

V V V A V °C

Full Brige Driver IC

Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output terminal leak current

Output DMOS RDS (ON)

Forward voltage characteristics characteristics between output DMOS and DS

Overcurrent limiting operation current

OPC start current Input terminal voltage V IN IN1, V IN IN2 Input terminal current V IN IN1, V IN IN2 DI terminal voltage DI terminal current EN terminal input voltage EN terminal input current

DIAG terminal output voltage DIAG terminal output current DIAG terminal leak current

Input delay time

Overvoltage protection operation voltage OVP hysteresis width Thermal protection starting temperature Thermal protection hysteresis width

62

IBB1 IBB2 VuvloH VuvloL ∆UVLO IleakHS IleakLS RDS(ON)_1H RDS(ON)_2H RDS(ON)_1L RDS(ON)_2L V F_H1 V F_H2 V F_L1 V F_L2 Iocp1_H1 Iocp1_H2 Iocp1_L1 Iocp1_L2 Iocp2_H1 Iocp2_H2 Iocp2_L1 Iocp2_L2 V INx INxH V INx INxL IINxH IINxL V DIx DIxH V DIx DIxL IDIxH IDIxL V EN ENth IENH IENL V DIAG DIAG IDIAG IDIAGL TdON TdOFF Tr Tf Tddis V OVP OVP ∆ V OVP OVP Ttsd_ON ∆Ttsd

Ratings ty p 15

max 100 7.0 6.5

5.0 4.5 0.5 –100

4.5 4.5 4.5 4.5

100 100 100 100 1.5 1.5 1.5 1.5 7 7 7 7 15 15 15 15

100 200 200 200 200

10 10 10 10

2 0.8 –100 –100 2 0.8 –100 –100 0.8

4 100 10 0.8

–10 1.5 –10

35 151

40 5 165 15

15 20 15 6 6 4 45

M OUT2

Cin

R1

R2

RDI

PGND

LGND

* Recommended connection parts Pressure rise capacitor for charge charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance resistance RDIAG: 20k Ω Input terminal pull-down resistance resistance R1, R2, RDI: 10k Ω

Unit mA µ A V V V µ A µ A mΩ mΩ mΩ mΩ V V V V A A A A A A A A V V µ A µ A V V µ A µ A V µ A µ A V mA µ A µS µS µS µS µS V V °C °C

OUT1

SFP7301

Remarks

(Tj = 30 to 125 °C, VB =14V, EN = DI =5V, Ccp = 33nF, RDIAG = 20kΩ unless otherwise specified) * 2

Electrical Characteristics Characteristics

RDIAG

IN1

DI

Ratings

min

Ccp DIAG

IN2

Symbol

Vcc

EN CP

Recommended Operation Range Parameter

0.25–0.05

2 . 0 ±

Power supply

Symbol

+0.15

+0.15

1.27±0.25

Note: *1: With glass epoxy + copper foil board (size 5.0• 7.4cm; t: glass epoxy =1.6mm/copper foil = 18µm)

Parameter

5 . 7

±

(Ta=25ºC)

Main power supply voltage Input terminal input voltage EN terminal voltage Disable terminal input voltage Output current

2 . 0

Conditions For V EN EN =0V

Io1 =1A Io2 =1A Io1 =–1A Io2 =–1A

V DI DI =5V V DI DI =0V

V DI DI =5V V DI DI =0V V EN EN =5V V EN EN =0V IDIAG =0.5mA For V DIAG DIAG =1.6V Time from VINxH to Voutx•0.2 Time from VINxL to Voutx•0.8 Time of Voutx from 20% to 80% Time of Voutx from 80% to 20% Time from DIthH to Vout x• 0.2

*3 *3

Note: *2: For the electrical characteristics for Tj = –40 to 150 °C, the design warranty applies to the above specification values. parameters are the design specifications. *3: Thermal protection starting temperature is 165°C (typ) by design. The above parameters

63

High Voltage Full Bridge Drive ICs

SLA2402M

Features

External Dimensions

Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line ● External components such as high voltage diodes and capacitors are not required

(unit: mm)

● One

Absolute Maximum Ratings Ratings Parameter Power source voltage

*

Symbol

Ratings

Unit

V M

500

V

31.0± 0.2 3.2 ± 0.15

16.4 s s e n k c i h t e t a l p s d n i a s e e L r

Ellipse 3.2 ±0.15 •3.8

24.4 ± 0.2

x a m 8 . 0 x

1.7±0.1

2 . 0

2 . 0 ±

0 . 0 . 6 3 1 9 . 1 9

2 . 0

a

a m 5 . 8

4.8±0.2

± 0.2

±

±

b

n i 7 . m 2 5 . 9

Conditions 0.65

+0.2 –0.1

+0.2

1.0 –0.1

2.45±0.2 +0.2

17•P1.68 ±0.1 =28.56

Input voltage

V IN IN

15

Output voltage

V O

500

V

Output current

IO

15

A

PW

Power dissipation

PD

5 (Ta=25ºC)

W

Without heatsink

Storage temperature

Tstg

–40 to +125

ºC

Operation temperature

Topr

–40 to +105

ºC

V

0.55 –0.1

31.5 max

250µs


* Power GND (D terminal) to -HV (-HV terminal) voltage.

Block Diagram

Electrical Characteristics Characteristics Parameter

Symbol

Power MOS FET output breakdown voltage

BV OUT OUT

Ratings min

typ

Unit

max

500

V

Conditions

7

IO=100 µ A

4

MOSQ1

D1

HO1

OUT1

Power MOS FET output leakage voltage

IOUT (off)

100

µ A

0.28

0.4

0.52

V

IO=0.4A, V IN IN=10V

VOUT (on) 2

1.4

2.0

2.6

V

IO=2A, V IN IN=10V

VOUT (on) 1

0.28

0.4

0.52

V

IO=0.4A, V GL GL=10V

VOUT (on) 2

1.4

2.0

2.6

V

IO=2A, V GL GL=10V

ICC 1

3.0

mA

V C CC C=4.5 to 15V

ICC 2

4.0

mA

V C CC C=10V, V M=400V


ICC 3

4.0

mA

V C CC C=10V, V M=400V

Input voltage (High level)

V IH IH

V

V C CC C=4.5 to 15V

Input voltage (Low level)

V IL IL

V

V C CC C=4.5 to 15V

Low-side Power MOS FET output on-state voltage

3

V IN IN1

6

–HV V IN IN2

8

10

9

LO2 L GND

11

13

GL2

16

CPU

* Dotted Line: Outside Connection


Delay time

*

0.8V C CC C 0.2V C CC C

t d (on)

1.4

µs

t d (off)

3.3

µs

∆t

2.5

V C CC C

Operating voltage

µs

15

V

Timing Chart

V C CC C=10A, V IN IN=10V,

Ignition

V CC CC

V M=85A, IO=0.41A

IN1

–40 to +105ºC

IN2

* About delay delay time

HO1

Signal input waveform vs output waveform

LO2

1 Highside switch turn-on, tu turn-off

2 Lowside switch turn-on, tu turn-off

V IN IN1 0V

V IN IN1

HO2 10%

10%

10%

0V

10%

LO1 —HV

0V

0V

V OUT OUT1

10%

td (on)

td (on)

* ∆t: ∆t= td (on) – td (off) (off) Measurement Circuit V IN IN2

RL V OUT OUT1

V OUT OUT2

Conditions V CC CC=10V, V IN IN=10V (pulse) V M=85V IO=0.41A (RL=207Ω ) lN1, * When pulse signal is inputted to V lN1

V IN IN2

V IN IN1

V M

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to V lN2 lN2, RL on dotted line is ON and dotted line RL is off.

64

–100V

OUT2 V OUT

OUT2-GND

td (on)

V IN IN1

0V

10%

10% 10%

td (on)

–400V

15 OUT2

MOSQ'2

LO1

GL1

VOUT (on) 1

High-side Power MOS FET output on-state voltage

MOS Q2 HO2

MIC

MOSQ'1

2

V O=500V

+12V

V CC CC

OSC 400Hz

17

High Voltage Full Bridge Drive ICs SLA2402M

Electrical Characteristics ■ Quiescent circuit current supplied high voltage


3.0

3.0 150ºC 105ºC

V IN=0V

) A 2.5 m ( 1 C C 2.0 I

3.0 V IN=0V V CC=10V

) A 2.5 m ( 2 C C I t 2.0 n e r r u c 1.5 t i u c r i c t 1.0 n e c s e i u 0.5 Q

25ºC

t n e r r u 1.5 c t i u c r i c t 1.0 n e c s e 0.5 i u Q

–40ºC

0 5

10

15

20

150ºC 105ºC

25ºC –40ºC

100

300

400

500

0

V CC= 15V

C I t 2.0 n e r r u c 1.5 t i u c r i c t 1.0 n e c s e i u 0.5 Q

3 25ºC 2 –40ºC 1

20

12V 10V 9V

4.5V 100

200

300

400

500

4.5V

25ºC –40ºC

0 2

3

100

) V (

8

500

V CC=15V V CC=9V

L G

V e 6 g a t l o v e 4 v i r d e t a G 2

6

4

2

V CC= 4.5V

0 0

50

100

150

0

5

10

15


Ambient temperature (ºC)

■ Output on-state voltage

400

Ta=25ºC

8

Output current (A)

300

10

0 –50

4

200

■ Gate drive voltage

L G

V e g a t l o v e v i r d e t a G

105ºC

1

9V

V CC=10V

150ºC

V CC= 15V

10V

0

10 V CC=V IN=10V ) V (

500

High voltage V M (V)


8

400

0 0

10

300

12V



0

200

Ta=25ºC

) A 3.0 m ( 3 C 2.5 C I t n e r 2.0 r u c t i u 1.5 c r i c g n 1.0 i t a r e p O 0.5

0 15

e g a t l o 6 v e t a t s n 4 o t u p t u O 2

100

■ Operating circuit current

C

105ºC

10

–40ºC

3.5

) A 2.5 m ( 2

150ºC

5

25ºC


Ta=25ºC

Operation voltage V CC (V)

■ Input threshold voltage 8

5 V CC=V IN=10V ) V (

t 2.0 n e r r u c 1.5 t i u c r i c g 1.0 n i t a r e p 0.5 O

3.0 V IN=0V V M=400V

0

) V (

200


5

0

105ºC

C C I


■ Quiescent circuit current supplied high voltage

150ºC

0 0


4

V CC=V IN1(2)=10V

) A m2.5 ( 3

0 0

) A m ( 2 C C I t n e r r u c t i u c r i c t n e c s e i u Q


7

V , H I V e g a t l o v d l o h s e r h t t u p n I

6

V CC=10V V IH

L I

4

e g a t l o 3 v e t a t s n 2 o t u p t u O 1

0 –50

) V (

IO=2A

IO=0.4A

0

50

100


150

5 4

V IL

3 2 1 0 –50

0

50

100

150


65


Electrical Characteristics ■ High side switch turn-on, off

■ High side switch turn-on, off

5.0

■ Low side switch turn-on, off

5.0 Ta=25ºC V M=85V, I O=0.41A

5.0 V M=85V, I O=0.41A V CC=10V

4.0

Ta=25ºC V M=85V, I O=0.41A turn-off

4.0

) s µ ( f 3.0 f o , n o n r 2.0 u t

) s µ ( f 3.0 f o , n o n r 2.0 u t

turn-off

4.0 ) s µ ( f 3.0 f o , n o n r 2.0 u t

turn-off

turn-on turn-on

1.0

0 4

6

8

10

12

14

150

4

1.0

0

50

100

150

■ Power derating curve 6 without heatsink

) W ( n 4 o i t a p i s 3 s i d r e w 2 o P

1

0

50

100


150

12

14

16

RDS (on) limited

e c n a t s 1 i s e r l a m r e 0.1 h t t n e i s n a r 0.01 T

) A ( t n e r r u c n i a r D

10 100µs 1ms

1 10ms 0.1

Ta=25ºC Single pulse 0.01

0.1

1

Power time (s)


10

100

W / C 10 º

0.001 0.0001 0.001

8

■ Safe operating area (Power MOS FET)

(

turn-on

6


)

turn-off

) s µ ( f 3.0 f o , n o n 2.0 r u t

66

100

100

4.0

0 –50

50

■ Transient thermal resistance characteristics

5.0

5

0 0



0 –50

1.0

0 –50

16


V M=85V, I O=0.41A V CC=10V

turn-on

1.0

10

100

Ta=25ºC Single pulse 0.01 10

100 Drain to source voltage (V)

1000

67


SLA2403M

Features

External Dimensions

Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line ● External components such as high voltage diodes and capacitors are not required

(unit: mm)

● One

Absolute Maximum Ratings Parameter Power source voltage

*

Symbol

Ratings

Unit

V M

500

V

s s e n k c i h t e t a l p s d n i a s e e L r

x a m 8 . 0 x

1.7±0.1

Output voltage

V O

500

V

IO

7

A

Tc=25ºC

IO (peak)

15

A

PW

5 (Ta=25ºC)

W

Without heatsink

40 (Tc=25ºC)

W


2 . 0

2 . 0 ±

0 . 0 . 6 3 1 9 . 1 9

2 . 0

a

a m 5 . 8

±

±

b

n i 7 . m 2 5 . 9 +0.2 –0.1

+0.2

1.0 –0.1

17•P1.68

15

4.8±0.2

16.4± 0.2

0.65

V IN

Power dissipation

Ellipse 3.2 ± 0.15 •3.8

24.4 ± 0.2

Conditions

Input voltage

Output current

31.0 ± 0.2 3.2 ±0.15

V

±0.1

2.45±0.2 +0.2

=28.56

0.55 –0.1

31.5 max


250µs

PD

Storage temperature

Tstg

–40 to +125

ºC

Operation temperature

Topr

–40 to +125

ºC

Tj

150

ºC


Block Diagram

* Power GND (D terminal) to -HV (-HV terminal) voltage.

7


Symbol

Power MOS FET output breakdown voltage

BV OUT

Power MOS FET output leakage voltage

IOUT (off)

4

Ratings min

typ

Unit

max

500

V 100

µ A

Conditions

0.18

0.26

0.34

V

IO=0.4A, V IN=10V

Lowside Power MOS FET output on-state voltage

V OUT (on)

0.18

0.26

0.34

V

IO=0.4A, V GL=10V

mA

V CC=10V, V M=400V

4.0

mA

V CC=10V, V M=400V

V

V CC=6 to 15V

V

V CC=6 to 15V

µs

V CC=10A, V IN=10V,

µs

V M=85V, IO=0.41A

Input voltage (High level)

V IH

Input voltage (Low level)

V IL

LO2 V IN1

–HV V IN2

GL2

L GND

6

8

10

9

11

13

17


4.0


MOSQ'2

LO1

GL1


Delay time

0.8V CC 0.2V CC

t d (on)

*

2.0

t d (off)

3.0

V CC

Operating voltage

6

15

V

Timing Chart Ignition

V CC IN1 IN2

–40 to +125ºC

HO1

* About delay time

LO2

Signal input waveform vs output waveform 1 Highside switch turn-on, turn-off

HO2

2 Lowside switch turn-on, turn-off

LO1 V IN1 0V

10%

V IN1

10%

10%

0V

10%

—HV

0V 10%

10% V OUT1

10%

10%

td (on)

td (on)

V OUT2

td (on)

* ∆t: ∆t= td (on) – td (off) Measurement Circuit V IN1

V IN2

RL V OUT1

V OUT2

V IN2

V IN1

V M

Conditions V CC=10V, V IN=10V (pulse) V M=85V IO=0.41A (RL=207Ω )

* When pulse signal is inputted to V lN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to V lN2, RL on dotted line is ON and dotted line R L is off.

68

0V –100V

0V

td (on)

OUT2-GND

–400V

D2

15 OUT2

CPU

V CC=6 to 15V

ICC 3

HO2

MIC

MOSQ'1

2

mA

ICC 2

OUT1

3

MOSQ2

V CC

HO1

V O=500V

V OUT (on)

3.0

D1

IO=100µ A

High-side Power MOS FET output on-state voltage

ICC 1

5

MOSQ1

OSC 400Hz

14 16


Electrical Characteristics ■ Quiescent circuit current

■ Quiescent circuit current supplied high voltage 3.0

3.0 V IN=0V

) A 2.5 m ( 1 C C I 2.0 t n e r r u 1.5 c t i u c r i c 1.0 t n e c s e 0.5 i u Q

150ºC 125ºC

4.0 V IN=0V V CC=10V

) A 2.5 m ( 2

85ºC

C C I

–40ºC

125ºC

2.0

85ºC 25ºC –40ºC

5

10

15

100


400

85ºC

C

25ºC

–40ºC

500

5

10

15

–40ºC

V CC= 15V

12V 10V 9V 6V

100

200

300

400

500

10V 9V 6V

100

200

300

400

500

■ Gate drive voltage 10 Ta=25ºC

) V (

125ºC

e g a t l o 3 v e t a t s - 2 n o t u p 1 t u O

85ºC 25ºC –40ºC

3

Output current

8

) V (

4

V CC=6V 4

2

0

50

100

150

0

200

0

V CC=V IN=10V ) V (

6

V e g a t l o v d l o h s e r h t t u p n I

5

I O=2A

1 IO=0.4A

150

15

10

) V (

L I

3

10


7


5


■ Input threshold voltage

100

V CC= 6V


4

50

V CC=10V


6

IOUT (A)


2

8

L G

0 –50

0 2

V CC=15V

V CC=10V

H I


150ºC

4

0

V CC= 15V

12V

0

10

0 –50

500



5

) V (

400

Ta=25ºC

) A 3.5 m ( 3 C 3.0 C I t n 2.5 e r r u c 2.0 t i u c r 1.5 i c g n i t 1.0 a r e p O 0.5

V CC=V IN=10V

1

300



6

200

0 0

20


0

100

4.0


) V (

25ºC

0

0

0 0

85ºC


Ta=25ºC

) A 3.0 m ( 2 C 2.5 C I t n e 2.0 r r u c t i u 1.5 c r i c t n 1.0 e c s e i u 0.5 Q

125ºC

C I t n 3 e r r u c t i u 2 c r i c t n e c s 1 e i u Q

V e g a t l o v e t a t s n o t u p t u O

300

3.5

) A m 4 ( 2

) N O ( T U O

200


150ºC

V IN=0V V M=400V

125ºC



5

150ºC

0 0

20

V CC=V IN1(2)=10V

) A 3.5 m ( 3 C 3.0 C I t n 2.5 e r r u c t 2.0 i u c r 1.5 i c g n i t 1.0 a r e p O 0.5

0 0

V

150ºC

t n e r r u 1.5 c t i u c r i c 1.0 t n e c s e 0.5 i u Q

25ºC

0

) N O ( T U O


8 V CC=10V

L G

4 V CC=10V

3 2

V CC=6V


V CC=6V

1 0 –50

0

50

100


150

0 –50

0

50

100

150


69


Electrical Characteristics ■ High side switch turn-on, off


5.0

5.0 Ta=25ºC V M=85V, I O=0.41A

5.0 V M=85V, I O=0.41A V CC=10V

4.0

Ta=25ºC V M=85V, I O=0.41A

4.0

) s µ ( f 3.0 f o , n o n r 2.0 u t

4.0

) s µ ( 3.0 f f o , n o n r 2.0 u t

turn-off

turn-on

turn-off

turn-on

) s µ ( 3.0 f f o , n o n r 2.0 u t

1.0

0 4

6

8

10

12

0 –50

14


100

150

4

1.0

0

50

100

150

RDS (on) limited

■ Power derating curve 50 Tc=25ºC

D

P

30

g n i t a r e d 20 r e w o P

10 without heatsink

50

100


150

12

14

10µs 100µs

10 1ms 1 10ms 0.1

Ta=25ºC Single pulse 0.01

0.1

1

Power time (s)


0

) A ( t n e r r u c n i a r D

e c n a t 1 s i s e r l a m r e 0.1 h t t n e i s n a r 0.01 T

0.001 0.001

10

100

(

turn-on

8

■ Safe operating area (Power MOS FET)

W / C 10 º

turn-off

6


)

4.0

0 –50

50

100 V M=85V, I O=0.41A V CC=10V

) 40 W (

0 0

■ Transient thermal resistance characteristics

5.0

0 –50

1.0



) s µ ( f 3.0 f o , n o n r 2.0 u t

turn-off

turn-on

1.0

70


10

100

Ta=25ºC Single pulse 0.01 10

100 Drain to source voltage (V)

1000

71


SMA2409M

Features

External Dimensions

Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) ● High Voltage Driver which accepts direct connection to the input signal line

(unit: mm)

● One

31.0 ±0.2

4.0±0.2

b

2 . 0

2 . 0

±

2 . 7 . 0 2 1 ±

a

Absolute Maximum Ratings Ratings Parameter

(Ta =25 °C)

Symbol

Ratings

Unit


V M

500

V

Input voltage

V IN IN

15

V

Operation voltage

Vcc

15

V

Output voltage

Vo

500

) 4 . 0 1 (

Conditions Power GNG to HV +0.2

+0.2

1.16 –0.1

0.65 –0.1 +0.2

14• P2.03±0.1=

V

0.55 –0.1

28.42) ( 28.42)

Output current (DC) Output current (pulses) Power dissipation

Io(DC)

7

A

Io(pulse)

15

A

4

PD


Tc =25°C

j-a

31.2

j-c

6.2


Topr

–40 to +105

°C

Storage temperature

Tstg

–40 to +150

°C


Tj

150

°C

IGBT single pulse avalanche resistance

E AS

5

mJ

V DD DD =30V, L =1mH, Unclamped, Ic =3.2A

ESD protection

ESD

±2

kV

Human body model (C = 100pF, R =1.5kΩ )

Thermal resistance

31.3 ±0.2

Single pulse (PW =50µs max.)

W

20

°CW

1 2 3 4 5 6 7 8 9 1 0 11 12 13 14 14 15 15

Tc =25°C

Block Diagram

6

Electrical Characteristics Characteristics

(Ta =25 °C) 4

Parameter

Symbol

IGBT output breakdown voltage

BV OUT OUT

IGBT output leak current

IOUT (off)

IGBT output ON voltage

Ratings min

typ

Operating circuit current Input threshold voltage

High side Delay time*

Low side

Conditions

2

µ A

1.2

V

Io =0.4A, V IN IN (or V GL GL ) =10V

1.3

1.8

V

Io =2.0A, V IN IN (or V GL GL ) =10V

Icc1

3.0

mA

Vcc =10V, V M =V IN IN =0V

Icc2

4.0

mA

Vcc =10V, V M =400V, V IN IN =0V

4.0

mA

Vcc =10V, V M =400V, V IN1 IN1 (or V IN2 IN2 ) =10V

V IH IH

0.8•Vcc

V 0.2•Vcc

V

V GL GL

0.8•Vcc

16

V

t d ( on on )

0.6

0.7

0.8

µs

t d ( off off ) )

1.8

2.2

2.6

µs

t d ( on on )

0.8

0.9

1.0

µs

t d ( off off ) )

1.3

1.6

1.9

µs

2.5

µs

15

V

Vcc

9

IGBT Q1

IGBT Q2

V CC CC

HO1

IGBT Q'1 GL1

Io =100µ A, Tj =25 °C

100

Icc3

D1

LO1

LO2

VIN1 –HV VIN2 L GND

IGBT Q'2 GL2

Vo =500V 3

5

7

9

8

10

11 11

13

CPU


Vcc =9 to 15V Vcc =9 to 15V

Timing Chart

V M =85V, Io =0.41A Vcc =10V V IN IN =10V (Out Stage =ON) V IN IN =0V (Out Stage =OFF)

A Drive Example Ignition

OSC250Hz

VCC IN1

∆t d =H/S t d (off) - L/S t d (on)

or L/S t d (off) - H/S t d (on)

IN2

Ta =–40 to +105 °C LO2

Recommended Operation Range min

td

typ

0V –85V –400V

Ratings

Symbol

Dead time

–HV–GND

max

5.0

Unit

OUT1–GND 0V

Conditions

–85V –400V

µs

Ta =–40 to +105 °C

0V –85V

OUT2–GND –400V

* About delay time Signal input waveform vs output waveform 1 Highside sw switch tu turn-on, tu turn-off V IN IN1 0V

10%

2 Lowside sw switch tu turn-on, tu turn-off V IN IN1 0V

10%

0V

0V 10%

10%

Vout1 td(on)

V OUT OUT1 V IN IN2

V IN IN2

RL

V IN IN1

10%

Vout2

td(off)

Measurement Circuit

72

10%

Conditions V CC CC=10V, V IN IN=10V (pulse) V M=85V IO=0.41A (RL=206Ω ) lN1, * When pulse signal is inputted to V lN1

V OUT OUT2

V IN IN1

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to V lN2 lN2, RL on dotted line is ON and dotted line R L is off.

10%

10%

12 OUT2

LO1

Parameter

D2

HO2

MIC

OUT1

1.0

∆td

Operating voltage

Unit V

V IL IL Low-side IGBT gate drive voltage

max

570

V OUT OUT (on)


1.2±0.2 (root dimensions)

(root dimensions)

14

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics Characteristics ■ Quiescent circuit current


3.5

4.0 150ºC

V IN IN=0V

) A 3.0 m ( 1

25ºC

t n e r 2.0 r u c t i u 1.5 c r i c t 1.0 n e c s e i 0.5 u Q

3.5 V IN IN=0V V CC CC=10V

) 3.5 A m ( 2 3.0

105ºC

C 2.5 C I

–40ºC

150ºC

t 2.5 n e r r u c 2.0 t i u c r 1.5 i c t n e 1.0 c s e i u 0.5 Q

105ºC

25ºC –40ºC

5

10

15

100


) A m 4 ( 2

400

25ºC

–40ºC

500

0

5

10

15

V CC CC= 15V

12V 10V 9V

6V 4.5V

N O ( T U O

200

300

400

500

3

Output current

4

8

) V (

L G

I O=2A

IO=0.4A

V CC CC=9V 4

2

Ambient temperature temperature (ºC)

400

500

V CC CC=15V

V CC CC=9V

2

0

50

100

150

0

200

0

5

7


6

15

■ Gate drive voltage 14

) V (

L G

4 3

12

V CC CC=15V

10

V e g 8 a t l o v e 6 v i r d e t 4 a G

V CC CC=15V

5

V CC CC=9V

2

0 –50

10

Input voltage V IN IN (V)

V CC CC=9V

2

1

150

300

10

V e g 8 a t l o v 6 e v i r d e 4 t a G

6

) V ( L I

100

200

12


V CC CC=V IN IN=10V

50

100


8

0

4.5V


2.0

0.6 –50

6V

14

IOUT (A)


V e g 1.4 a t l o v e 1.2 t a t s n o 1.0 t u p t u 0.8 O

9V

0

V CC CC=15V

0 –50

0.5 2

10V


H I


e g a t l o v e t a t s - 1.0 n o t u p t u O

1

12V

Ta=25ºC ) V (

500

V CC CC= 15V

C 2.5 I t n e r 2.0 r u c t i u 1.5 c r i c g n 1.0 i t a r e p 0.5 O

10

V 1.5

0

Ta=25ºC

) A 3.0 m ( 3


150ºC 105ºC 25ºC –40ºC

400

0 100


V CC CC=V IN IN=10V

300

C

0

20

■ Output on-state voltage 2.0

200

3.5

Operation voltage V C CC C (V)

) V ( )

100


0

0 0

–40ºC


Ta=25ºC

) A 3.0 m ( 2 C C 2.5 I t n e 2.0 r r u c t i u 1.5 c r i c t n 1.0 e c s e i u 0.5 Q

C

) 1.8 N O ( T U O 1.6

300

3.5

125ºC

C I t n 3 e r r u c t i u c r 2 i c t n e c s 1 e i u Q

200


150ºC

V IN IN=0V V M=400V

25ºC



5

105ºC

0 0

20

150ºC

C

C 2.5 I t n e r r 2.0 u c t i u 1.5 c r i c g n 1.0 i t a r e p O0.5

0 0

V CC CC=V IN IN1(2)=10V

) A 3.0 m ( 3

C C I

0

) V (


0

50

100

150


200

0 –50

0

50

100

150


73

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics Characteristics ■ High side switch turn-on, off


3.0

3.5

2.5

3.0

2.0

) 2.5 s µ ( f f 2.0 o , n o - 1.5 n r u t

t d (off)

) s 2.0 µ ( f f o , n 1.5 o n r u t 1.0


1.5

) s µ ( f f o , n 1.0 o n r u t

t d (off)

1.0

t d (on)

t d (on)

0.5

t d (on)

0.5

t d (off)

0.5

0 7

9

11

13

0 –50

15


0 0

50

100

150

7



11

13

15


characteristics ■ Transient thermal resistance characteristics

2.5

9

100

characteristics ■ IGBT ASO characteristics 100

)

W /

2.0

C º ( 10

t d (off)

) s µ ( 1.5 f f o , n o n r 1.0 u t

t d (on)

0.5

0 –50

0

50

100

150

■ Power derating curve 5 without heatsink 4 ) W ( D

P

3

g n i t a r e d 2 r e w o P

1

0

50

100


74

0.01 0.001

t n e r r u c r o t c e l l o C

150

100 µs 1 1ms Ta = 25 °C Single pulse

0.01

0.1

1

Power time (s)


0 –50

) A ( 10

e c n a t s i s e r l 1 a m r e h t t n e i s 0.1 n a r T

10

100

0.1 10

10ms 100 Collector-emitter voltage (V)

1000

75

Custom ICs

■ Various ■ Meets

processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.

detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.

■ Employs

a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic

devices. ■ Also

available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic

IC configuration.

Features ● All

Examples of Sanken Automotive Hybrid ICs

semiconductor chips used are

manufactured by Sanken. ● Main

product lineup consists of

power ICs produced out of many

Lead frame type multi-chip power IC

● One-chip

power IC

years' experience of Sanken. ● Uses

monolithic chips with flip-chip

construction. ● Mainly

available in miniature

transfer-mold packages.

Examples of Custom Hybrid IC Products ● Regulators

for alternators

● Igniters

Lead frame type power hybrid IC with

● Power

ceramic substrate

supply for microcomputer

system ● Power

steering control IC

● Motor

and actuator driver

● Others

Surface-mount power IC

76

High-output high-breakdown voltage IC integration of custom circuits ● Distribution of unit functions (Actuators may be built in the device) ●

● Simplified

Custom ICs

External Dimensions

(unit: mm)

5.0

15.6

4.2

10.0

9 . 9 1

4.0

0 . 9

SLA12pin 4.0

31.0

2 . 0 1

3GR-F

0 . 6 1

6 1

3GR-M

STR-S 5.5

19.8

5.5

24.2

3 2

3 2

SPM

4.8

31.0

4.8

0 . 6 1

5.5

15.6

4.8

31.0

SLA15pin

31.0

2 . 0 1

SLA18pin

4.0

25.25

0 . 9

SMA15pin

31.0

4.0

20.2

9 . 6 1

SMA12pin

STA 10pin

STA 8pin

FM205

MT-100

3 2

SMD16pin

SPF16pin 12.05 16 15 14 13 12 11 10

4.8

35

16

8 . 9

1 . 6 1

8 . 6

5 . 7 Pin 1

20.0

5 . 0 1

8 1

0 . 4

SPF20pin

9

9

2

3

4

5

6

7

8

5 . 2

SPF24pin

14.74±0.2

+0.1

13.04±0.2

17.28

1.0 – 0.05

20

Fin thickness

11

13

3 . 0

2 . 0

±

5 . 0 1

5 . 7

±

2 . 0

24

5 . 7

6 . 0 1

2

±

10

1 1.27±0.25

+0.15

0.4 – 0.05

1 2 . 0 ±

5 . 2

12

+0.15

0.25 – 0.05

5 . 2

77

78

2

Discretes 2-1. Transistors

2-2. MOS FETs .........................................

80

......

80

2SK3710 (60V/70A/6mΩ, Surface-mount ) ... 108

....................................

81

2SK3711 (60V/70A/6mΩ ) .............................. 109

12A) .................................... 82


2-1-1. Transistors

2SA1488/1488A ( –60V/–4A, –80V/–4A)

2SA1567 ( –50V/ –12A)

2SA1568 ( –60V/

2SA1908 ( –120V/ –8A)

2SB1622 ( –200V/ –15A)

±

2-2-1. MOS FETs

.........................................

108

.....................................

83

2SK3800 ( 40V/70A/6mΩ, Surface-mount )

...................................

84

2SK3801 (40V/70A/6mΩ ) .............................. 112

2SC3852 ( 60V/3A) ...........................................

85


2SC4024 ( 50V/10A)

........................................

86

2SK3851 (60V/85A/4.7mΩ )

2SC4065 ( 60V/ ±12A)

......................................

87

FKV460S (40V/60A/9mΩ, Surface-mount ) ... 115

2SC4153 ( 120V/7A)

........................................

88

FKV660S ( 60V/60A/14mΩ, Surface-mount )

116

2SD2141 ( 380±50V/6A)

..................................

89

...........................

117

....................................

90

SDK06 ( 52±5V/3A/0.25Ω, Surface-mount 4-circuits) 117

........................................

91

SDK08 ( 50V/4.5A/0.08Ω, Surface-mount 4-circuits) 118

...........................................

92

SDK09 (12V/6A/0.2Ω, Surface-mount 4-circuits) 119

.................................

93

SLA5027 (60V/12A/0.08Ω, 4-circuits)

...................................

94

SLA5098 (40V/20A/0.017Ω, 6-circuits)

...........

95

............................

96

2SD2382 (60±5V/ ±6A)

2SD2633 (150V/8A)

FP812 (–100V/–8A)

MN611S (115±10V/ ±6A)

MN638S ( 380±50V/6A)

SSD103 (65±5V/ ±6A, Surface-mount)

2-1-2. Transistor Arrays

2-2-2. MOS FET Arrays

..

..........................

111

114

..........

120

.......

121

SMA5113 (450V/7A/1.1Ω, 4-circuits)

..........

122

STA508A ( 120V/6A/0.2Ω, 4-circuits)

...........

123

STA509A ( 52±5V/3A/0.25 Ω, 4-circuits)

.......

124

SDA03 ( –60V/–6A, Surface-mount 4-circuits)

96

SDA04 ( –60V/–6A, Surface-mount 2-circuits)

97

SDC09 (65±5V/6A, Surface-mount 2-circuits)

98

2-3 Thyristors

99

2-3-1. Reverse Conducting Thyristors .. 125

( 60V/12A, –55V/ –12A, H-bridge) .........

SLA8004

SPF0001 (115±10V/ ±6A, Surface-mount 2-circuits) 100

STA315A (35±5V/2A, 3-circuits)

..................

101

STA335A ( 35±5V/3A, 2-circuits)

..................

102

STA415A ( 35±5V/2A, 4-circuits)

..................

103

..............

104

................

105

............

106

2-4-3. Power Zener Diodes

..................

107

2-4-4. General-purpose Diodes .......... 130

STA460C ( 60±10V/ ±6A, 2-circuits)



STA464C ( 65±5V/6A, 4-circuits)

TFC561D ( 600V, 430A, 1200A/ µs)

..............

125

TFC562D ( 600V, 600A, 1600A/ µs)

..............

126

..........................

127

2-4. Diodes 2-4-1. Alternator Diodes

2-4-2. High-voltage Diodes for Igniter .. 128 ...................

129

79

Power Transistor

Absolute Maximum Ratings (Ta=25ºC) Ratings 2SA1488 2SA1488A –60 –80

Symbol VCBO VCEO

–60

2SA1488/1488A


Unit

–80

V V

ICBO

V

IEBO

IC

–4 –1

A

V(BR) CEO hFE

25 (Tc = 25ºC)

W

150

ºC ºC

Tstg

–55 to +150

–100max –60

VCB = VEB = –6V

–6

A

Ratings 2SA1488 2SA1488A

Test Conditions

VEBO IB PC Tj

(Ta = 25ºC) Unit

IC = –25mA

–60min

V µ A

–80min

VCE (sat) fT

VCE = –12V, IE = –0.2A

40min –0.5max 15typ

COB

VCB = –10V, f = 1MHz

90typ

RL ( Ω )

IC (A)

–12

6

–2

VBB1 VBB2 (V) (V)

V

–10

5

8 . 0

MHz pF

IB2 (mA)

t on ( µs)

t stg ( µs)

–200

200 0.25typ 0.75typ 0.25typ

2.8

2.6

9 . 3 1.35 1.35 0.85 2.54

tf ( µs)

) 5 . 3 1 ( 0.45

2.54 2.2

a) Part No. b) Lot No. (Unit: mm)

B C E

■ IC —V CE Characteristics (typ.) –4

A 0 m 8 –

■ V CE (sat) —I B Characteristics (typ.)

■ IC —V BE Temperature Characteristics (typ.)

–1.5

A – 6 0 m

(V CE = –4V )

–4

–50m A

–40m A

–3

) A ( C I –2

–3

) –1.0 V ( ) t a s (

–30m A

–20m A

) A ( –2 C I

E C

) ) r e ) t u e r e r a u r t u t e r a p r a e e m p p t e m m e t e t e s a e e s s ( C a a ( C ( C ºC 5 C 2 º º C 1 0 5

V–0.5

–10m A

–1

–1

IC = –3A IB = –5mA

–2A –1A

0

0

–1

–2

–3

C0.5

9 . 6 1

a b

V

IB1 (mA)

3.3

4 4 . 8

Typical Switching Characteristics (common emitter) VCC (V)

4.2

10.0

µ A

–100max –80

–100max

VCE = –4V, IC = –1A IC = –2A, IB = –0.2A

External Dimensions TO220F (full-mold)

–4

–5

0 –0.01

–6

–0.05

V CE (V)

2

–0.1

–0.5

0

–1

0

–0.5

■ hFE —I C Temperature Characteristics (typ.) (V CE = –4V)

500

–1.5

■ j-a —t Characteristics

(V CE = –4V)

200

–1.0

V BE (V)

IB (A)

■ hFE —I C Characteristics (typ.)

3 –

5

125ºC

) W / C º (

25ºC

100

Ty p

E F h 100

–30ºC

E F

h

a j

50 50

1

20 –0.01

–0.1

–0.5

–1

–4

20 –0.02

–0.1

–1

IC (A)

50

Typ

10

0.05 0.1

IE (A)

80

D C

) W (

20

C

P 10

–0.1

0.5

1

3

–0.05 3

1000

natural air cooling Silicone grease Aluminum heatsink Unit: mm

1 m 1 0 s m s

100ms

Without heatsink natural air cooling

20

100

30

) –1 A ( C I –0.5

T f

0 0.005 0.01

10

■ PC —Ta Derating

–10 –5

40

1

t (ms)

■ Safe Operating Area (single pulse) (V CE = –12V)

) z H M ( 30

0. 7

IC (A)

■ f T —I E Characteristics (typ.) 60

–4

5

10

50

V CE (V)

100

2 0 0

1 5 0 • 1 5 0 • 2 1 0 0 • 1 0 0 5 0 • • 2 5 0 • 2

W i t h i n f i n i t e h e a t s i n k

Without heatsink

25

50

75

Ta (ºC)

100

125

150

Power Transistor 2SA1567

Absolute Maximum Ratings (Ta = 25ºC)


Symbol VCBO VCEO

Ratings –50 –50

Unit V V

Symbol ICBO

VEBO IC

–6

V

–12 –3 35 (Tc = 25ºC)

A A

V(BR) CEO hFE

IB PC Tj

W ºC ºC

150

Tstg

IEBO

–55 to +150

(Ta=25ºC)

Test Conditions VCB = –50V VEB = –6V

Ratings –100max –100max

Unit µ A

IC = –25mA

–50min

V

VCE = –1V, IC = –6A IC = –6A, IB = –0.3A


VCE = –12V, IE = –0.5A

–0.35max 40typ

COB


330typ

V MHz pF

RL ( Ω )

IC (A)

–24

4

–6

VBB1 VBB2 (V) (V) –10

5

IB1 (mA)

IB2 (mA)

–120

120

t on ( µs)

t stg ( µs)

2.8

8 . 0 9 . 3 1.35 1.35 0.85

tf ( µs)

2.54

0.4typ 0.4typ 0.2typ

2.6

) 5 . 3 1 ( 0.45

2.54 2.2


B C E

■ IC —V CE Characteristics (typ.)

■ V CE (sat)—IB Characteristics (typ.)

–12

A 0 m – 1 5

–10

) –1.0 V ( ) t a s (

–60m A –40m A

–8

) A ( –6 C I

E C

V–0.5

–20mA

–4

–6A

–1

–2

–3

–4

–5

0 –2

–6

–10

0 0

–1000 –3000

500

–0.6

–0.8

–1.0

–1.2

■ j-a —t Characteristics

(V CE = –1V )

4

125ºC

Typ

25ºC

h 100

h 100

) W / C º ( 1

50

50

0.5

–30ºC E F

E F

–0.1

–1

–10

a j

30 –0.02

–0.1

–1

IC (A)

0.3

1

10

35

1 m 1 0 0 0 m s s D

–5

) z H M 30 (

1 m s

C

) 20 W ( C

P

–0.5 Without heatsink natural air cooling

20


30

) A ( C –1 I

T f

1000

■ PC —Ta Derating

–30 –10

Typ

100

t (ms)


50

–10

IC (A)

■ f T —I E Characteristics (typ.)

40

–0.4

V BE (V)

■ hFE —I C Temperature Characteristics (typ.) (V CE = –1V )

30 –0.02

–0.2

IB (mA)

■ hFE —I C Characteristics (typ.) 500

–2

–100

V CE (V)

) ) ) r e r e re u t t u t u a r r a ra e e e p p p m m m t e t e t e e e e s s s a a a C ( ( C ( C º C º C º C 5 0 2 5 3 1 2 –

–4

–1A

–5mA

0

IC = –12A –9A

–3A

–10mA

–2

(V CE = –4V )

–12

–100m A

) –8 A ( C I –6

0

■ IC —V BE Temperature Characteristics (typ.)

–1.5

A = m 0 I B 0 –10 2 –

C0.5

9 . 6 1

a b


3.3

4 4 . 8

50min

VCE ( sat) fT

4.2

10.0

µ A

10

1 5 0 • 1 0 0 1 5 0 • • 1 0 0 • 2 2


50 • 50 • 2 –0.1 0 0.05 0.1

1

IE (A)

12

–0.05 –3

–5

–10

–50

V CE (V)

–100

2 0 0

Without heatsink

25

50

75

100

125

150

Ta (ºC)

81

Power Transistor 2SA1568

Absolute Maximum Ratings (Ta=25ºC)


Symbol VCBO VCEO

Ratings –60 –60

Unit V V

Symbol ICBO

VEBO IC

–6

V

±

A

V(BR) CEO hFE

IB PC Tj

12 –3 35 (T c =25ºC) 150

Tstg

–55 to +150

IEBO

A W ºC ºC

VCE (sat) VFEC fT COB

(Ta=25ºC)



Unit µ A

IC = –25mA

–60min

V

VCE = –1V, IC = –6A IC = –6A, IB = –0.3A IECO = –10A


V

VCE = –12V, IE = 0.5A

MHz


330typ

pF

V

RL ( Ω )

IC (A)

–24

4

–6

VBB1 VBB2 (V) (V) –10

5

IB1 (mA)

IB2 (mA)

–120

120

t on ( µs)

t stg ( µs)

2.8

8 . 0 9 . 3 1.35 1.35 0.85

tf ( µs)

2.54

2.6

) 5 . 3 1 ( 0.45

2.54 2.2

0.4typ 0.4typ 0.2typ a) Part No. b) Lot No.

B C E

■ IC — V CE Characteristics (typ.) –12 –10

A = m I B 0 0 2 –

■ V CE (sat) — IB Characteristics (typ.)

–60m A

–40m A

–10

) V ( ) t a s (

–1.0

–8 IC = –12A

) A ( –6 C I

–9A –6A

E C

–3A

V –0.5

–4

–20mA

) ) r e ) re t u r e a t u r t u ra e p r a e e m p p m t e m e e t t e s e a e s C s a ( a ( C C º ( C 5 ºC 2 º C 5 1 0 2

–4

–1A

–10mA

–2

(V CE = –1V )

–12

– 100m A

) –8 A ( C I –6

(Unit: mm)

■ IC — V BE Temperature Characteristics (typ.)

–1.4

A 0 m – 1 5

C0.5

9 . 6 1

a b


3.3

4 4 . 8

50min –0.35max –2.5max 40typ

4.2

10.0

mA

–2

3 –

0 0

–1

–2

–3

–4

–5

0 –7 –10

–6

–100

V CE (V)

–1000 –3000

0

–0.2

–0.4

IB (mA)

■ hFE — IC Characteristics (typ.)

300

125ºC

E F

–30ºC

h

4

a j

10

10

–1.2

) W / C º ( 1

E F

h

–1.0

25ºC

100

100

–0.8

■ j-a — t Characteristics

(V CE = –1V )

Typ

–0.6

V BE (V)

■ hFE — IC Temperature Characteristics (typ.) (V CE = –1V )

300

0

0.5 2 –0.02

–0.1

–1

IC (A)

–10 –12

■ f T — IE Characteristics (typ.)

40

–0.1

–1

–10 –12

IC (A)


50

2 –0.02

1 m 1 0 0 0 m s s D

1 m s

C

C

P

–0.1 0 0.05 0.1

1

IE (A)

82

10


) 20 W (


–0.05 –3

1000


30

–0.5 20

100

■ PC — Ta Derating

) A ( C –1 I

T f

10

35

–5

) z H M ( 30

1

t (ms)

–30 –10

Typ

0.3

–5

–10

–50

VCE (V)

–100

1 5 0 • 1 5 0 • 10 2 1 0 0 • 1 50 • 50 • 2 0 0 • 2

2 0

Without heatsink

0

25

50

75

Ta (ºC)

100

125

150

Power Transistor

Absolute Maximum Ratings (Ta=25ºC) Symbol

Ratings

Unit

VCBO VCEO

–120 –120

V V

VEBO IC

–6 –8

V

Electrical Characteristics Symbol ICBO

–3 75 (Tc=25ºC) 150

Tstg

–55 to +150


IEBO V(BR) CEO h FE *

A

IB PC Tj

2SA1908

A W

Ratings

–10max –10max –120min 50min –0.5max 20typ 300typ

IC = –50mA

VCE (sat) fT

VCE = –4V, IC = –3A IC = –3A, IB = –0.3A VCE = –12V, IE = 0.5A

COB


ºC ºC

(Ta=25ºC) Unit µ A

External Dimensions FM100 (T03PF)

±

IC (A)

–40

10

–4

VBB1 VBB2 (V) (V) –10

5

t on ( µs)

5 . 9

3 . 0

±

0 . 3 2

V MHz pF

IB1 (mA)

IB2 (mA)

t stg ( µs)

–400

400 0.14typ 1.40typ 0.21typ

3.3±0.2

a b

6 . 1 0 . 3 3 . 3

1.75

2 . 6 1

Typical Switching Characteristics (common emitter) RL ( Ω )

5 . 5

2 . 0

V

5.5±0.2 3.45±0.2

±

8 . 0

µ A

* Rank: O (50 to 100), P(70 to 140), Y(90 to 180)

VCC (V)

2 . 0

15.6±0.2

0.8

2.15 +0.2

1.05 – 0.1

tf ( µs)

5.45±0.1 1.5

B

4.4

1.5

C

E

0.65

5.45±0.1

+0.2

3.35 – 0.1



■ IC — V CE Characteristics (typ.) –8


– 75 m A

–6

) A (

(V CE = –4V )

–8

–3

A A A 0 m 1 5 0 m 0 m 5 – 2 0 A – 3 – 1 0 0 m –

–6

) –2 V ( ) t a s (

–50m A

C –4 I

) A ( C –4 I

) ) ) r e r e re t u t u t u r a r a ra e e e p p p m m m t e t e t e e e e s s s a a a ( C ( C ( C º C º C º C 5 5 0 2 2 3 1 –

E C

–25mA

V –1

–2

–2

IC =–8A

IB=–10mA

–4A 0

0

–1

–2

–3

0

–4

–2A 0

–0.2

–0.6

–0.8

0

–1.0

0

–0.5

■ hFE — IC Temperature Characteristics (typ.)

■ hFE — IC Characteristics (typ.) (V CE = –4V)

200

(V CE = –4V)

300

125ºC

Typ

E 100 F

E F

h

h

–1.5

■ j-a — t Characteristics 4

) W / C 1 º (

25ºC

100

–1.0

V BE (V)

IB (mA)

V CE (V)

–30ºC

a j 0.5

50

50

30 –0.02

–0.1

–0.5 –1

–5 –8

30 –0.02

0.2 –0.1

IC (A)

–0.5

–1

–5 –8

10

100

80

1 0 m s

–10

1 D C 0 0 m s

–5

20

f

T

10


–20

Typ

1000 2000

t (ms)


30

60

) A (

) W (

C I –1

P

C


40

–0.5 20


0 0.02

1

IC (A)


) z H M (

–0.4

0.05 0.1

0.5

IE (A)

1

5

8

–0.1 –5

–10

–50

VCE (V)

–100 –150

3.5 0

Without heatsink

0

25

50

75

100

125

150

Ta (ºC)

83

Power Transistor


2SB1622


Symbol VCBO VCEO

Ratings –200 –200

Unit V V

ICBO

VEBO IC IB PC Tj

–5

V

IEBO

–15 –1 85 (Tc =25ºC) 150

A

Tstg

–55 to +150

VCEO hFE* VCE( sat ) VBE( sat ) fT COB

Symbol

A W ºC ºC

(Ta=25ºC)

Test Conditions

Ratings typ

min

VCB = –200V VEB = –5V IC = –30mA

Unit

max –100 –100

– 200 5000

VCE = –4V, IC = –10A IC = –10A, IB = –10mA IC = –10A, IB = –10mA VCE = –12V, IE = 2A VCB = –10V, f = 1MHz

External Dimensions

µ A

2 . 0 ±

30000

a b

V V

60 270

IC ( A )

– 40

4

–10

■ IC — V CE Characteristics (typ.) 15

+0.2

–10

10

t on ( µs )

tstg ( µs )

) V ( ) t a s (

) A ( C I

–0.5mA

–2

–4

) V ( ) t a s (

0 –0.2

–6

(Unit: mm)

125ºC 75ºC 25ºC –30ºC

–1

–10

IC =–5A

–2

V

0 –0.1

–100 –200

–1

IB (mA)

–10

–100 –200

IB (mA)


–3

(V CE = –4V)

15

■ hFE — IC Characteristics (typ.) 100000

IC =–10A

V CE = –4V

50000 typ

) –2 V ( ) t a s (

10

) A ( C I

E C

125ºC 75ºC 25ºC –30ºC

V –1

0 –0.2

–1

5

–10

150ºC 125ºC 100ºC 75ºC

V CE = –4V

–1

–2

E F

50ºC 25ºC 0ºC –30ºC –55ºC

–1

–5

10

–10

) 5 c e s µ (

–20

tf

–20

a j

ton

0.1 –0.2

0.1 –0.5

–1

–5

–10

–20

1

10

60

–10

) z H 40 M ( T f

–5

■ PC — Ta Derating 90

70 W i t h i n f i n i t e h e a t s i n k

60

) 50 W ( C 40 P

–0.5

30 Without heatsink natural air cooling

5 10

10002000

80

1 0 m s 1 0 0 m s D . C .

) A ( C –1 I

20

100

t (sec) Ta =25ºC (single pulse)

–50 –30

0.5 1

–10

) 1.0 W / C º 0.5 (

tstg

■ Safe Operating Area

80

IE (A)

–5

3.0

IC (A)


0.1

–1


Ta = 25ºC V CC = –40V –I B1 = IB2 = 10mA

IC (A)

0 0.02

–0.5

–3

■ ton• tstg•t f — IC Characteristics (typ.)

f t • 1 g t s t 0.5 • n o t

h10000

–0.5

1000 –0.2

V BE (V)


5000

5000

50ºC 25ºC 0ºC –30ºC –55ºC

IC (A)

0

–100 –200

E F10000

h

Ta=150ºC 125ºC 100ºC 75ºC

IB (mA)

70 84

E

E C –1

IC =–5A

V

■ V CE (sat) — IB Temperature Characteristics (typ.)

1000 –0.2

C


IC =–10A

V CE ( V)

50000

B

IC =–15A

E C –1

IB =–0.3mA

5

100000



–3

–2

3.35±0.2

0.65 –0.1

15.6±0.2 1.5 4.4 1.5

tf ( µs )


–0.8mA

0

5

IB2 ( mA )

–1.5mA –1.0mA

10

0

–10

IB1 ( mA )

0.8

+0.2

1.05 –0.1 5.45±0.1

5.45±0.1

–3

A m 0 . 3 –

–50mA –15mA –5.0mA

VBB1 VBB2 ( V ) ( V )

0 . 3

1.75±0.15 2 . 2.15±0.15 6 1

MHz pF

Typical Switching Characteristics RL ( Ω )

5 . 3 . 9 0 ± 0 . 3 2 6 . 3 1 . 3

V –2.5 –3.0

5.5 ±0.2 3.45 ±0.2

± 8 . 5 . 0 5

µ A

* Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC V ( )

2 . 0

3.3 ±0.2

20

–0.1

10

–0.05 –3

0

–10

–100

V CE ( V)

–500

Without heatsink

0

25

50

75

Ta (ºC)

100 125 150

Power Transistor 2SC3852


Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO VCEO

Unit

Ratings 80 60

VEBO IC IB PC Tj

V V

6

V

3 1 25 (Tc=25ºC) 150

A

Tstg

A W ºC ºC

–55 to +150

Symbol ICBO IEBO

Test Conditions VCB = 80V

V(BR) CEO hFE

IC = 25mA

(Ta=25ºC)

VEB = 6V VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA

Ratings 10max 100max

Unit µ A

60min 500min

V V

VCE (sat) fT

VCE = 12V, IE = –0.2A

0.5max 15typ

COB

VCB = 10V, f = 1MHz

50typ


RL ( Ω )

IC (A)

20

20

1.0

VBB1 VBB2 (V) (V) 10

–5

IB1 (mA)

IB2 (mA)

15

–30

3.3

t stg ( µs)

C0.5

9 . 6 1

a b

MHz pF

t on ( µs)

2.8

4 4 . 8 8 . 0 9 . 3 1.35 1.35 0.85


4.2

10.0

µ A

tf ( µs)

2.54

2.6

) 5 . 3 1 ( 0.45

2.54 2.2



B C E

(Unit: mm)

■ IC — V CE Characteristics (typ.)


3


m A 1 2 I B =

(V CE = 4V)

3

1.5 8m A

5m A

) 1.0 V ( ) t a s (

2

) A (

3mA

C I

2m A

1

2

C I

E C

V 0.5

1mA

) ) ) r e t u r e r e r a t u t u e r a p r a e e m p p t e m m e t e t e s a e e s s ( C a a ( C º C ( C 5 º C 2 ºC 1 5

) A ( 1 3A 2A

0.5mA

IC =1A 0

0

1

2

3

4

5

0 0.001

6

0.005 0 .01

V CE (V)

0.05 0.1

0.5

0

1

0.5

0

IB (A)


1.0 1.1

V BE (V)

■ hFE — IC Temperature Characteristics (typ.) (VCE=4V)

0 3 –

2

■ j-a — t Characteri stics

(V CE =4V)

2000

5

125ºC

1000

1000

Typ

E 500 F

E 500 F

h

) W / C º (

25 º C

– 3 0 º C

h

a j 1

100 0.01

0.1

0.5

1

3

100 0.01

0.1

IC (A)

3

1

10

30

D C

) 1 A ( C I 0.5

T f


10

20 Typ

100

V CB = 10V IE = –2A 1000

t (ms)

■ Safe Operating Area (single pulse) (V CE = 12V)

5

) z H M (

1

IC (A)

■ f T — IE Characteristics (typ.) 30

0.5

0.5

1 m 1 0 s 1 0 m s 0 m s

) W (

20


C

P 10

10 Without heatsink natural air cooling

0.1 0 –0.0 05 –0.0 1

–0.05 –0.1

IE (A)

–0.5 –1

–2

0.05 3

Without heatsink

5

10

50

VCE (V)

100

0

0

50

100

150

Ta (ºC)

85




Ratings

Unit

VCBO VCEO

100 50

V V

VEBO IC

15

V

10 3

A

IB PC Tj

35 (Tc=25ºC)

Tstg

–55 to +150

Symbol ICBO IEBO

W ºC ºC

Ratings 10max 10max

IC = 25mA

V(BR) CEO hFE

A

150

Test Conditions VCB = 100V VEB = 15V

(Ta=25ºC) Unit µ A µ A

VCE (sat) fT

VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = –0.5A

COB

VCB = 10V, f = 1MHz

50min 300 to 1600

V

0.5max 24typ

V


RL ( Ω )

IC (A)

IB1 (A)

IB2 (A)

t on ( µs)

t stg ( µs)

tf ( µs)

20

4

5

0.1

–0.1

0.5typ

2.0typ

0.5typ

2.8

C0.5

9 . 6 1

a b

8 . 0 9 . 3 1.35 1.35 0.85


3.3

4 4 . 8

MHz pF

150typ

4.2

10.0

2.54

2.6

) 5 . 3 1 ( 0.45

2.54 2.2


B C E

(Unit: mm)



10

■ IC — V BE Temperature Characteristics (typ.) (V CE = 4V)

10

1.5 IB = 35m A 30m A

8

8

25m A

) A ( C I

) 1.0 V ( ) t a s (

20m A

6

15mA

E C

10mA

4

10A

5mA

2 3A

IC = 1A 2

4

0 0.002

6

0.01

2

5A

5 2

0.1

V CE ( V)

1

0 0

2

1.0

1.2

V BE V) (

■ hFE — IC Temperature Characteristics (typ.) (V CE = 4V)

º C 0 3 –

0.5

IB ( A)


) r e ) t u r e ) r a t u r e e p r a t u e m r a p t e e m p e s t e m a t e e C s ( a e C s º ( C a 5 2 ( C º C 1

4

V 0.5

0 0

6

) A ( C I


(V CE = 4V)

1000

4

1 25 º C

Typ

500 E F

E F

h

) W / C º ( 1

2 5 º C

500

º C – 3 0

h

a j

0.5 100 0.02

0.1

0.5

1

5

10

100 0.02

0.1

0.5

IC ( A)

20

) A (

10

10


1 0 m s 1 0 0 m s

30

) W ( 20

D C

–1

IE A) (

–5

– 10


C

1

–0.5


1 m s

P

0.2 3

1000

40

5

0.5

100

t ( ms)

C I

T f

0 –0.05 –0.1

0.3 1

30

10

86

10


Typ

) z H M (

5

IC ( A)


1

10


5

10

V CE ( V)

50

100

2 0

1 5 0 • 1 5 0 • 2 • 50 • 50 • 2 1 00 1 0 0 • 2

Without heatsink

0

25

50

75

Ta ( ºC)

100

125

150




Ratings

Unit

VCBO VCEO

60 60 6

V V V

IC

±12

A

IB

3

A

VEBO

PC Tj

Symbol ICBO

100max 60max

IC = 25mA

60min

VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A

IEBO V(BR) CEO hFE

35 (Tc=25ºC) 150

W ºC

VCE (sat) VFEC fT

–55 to +150

ºC

COB

Tstg



Ratings


V

VCE = 12V, IE = –0.5A

50min 0.35max 2.5max 24typ

VCB = 10V, f = 1MHz

180typ

RL ( Ω )

IC (A)

24

4

6


–5

IB1 (A)

IB2 (A)

0.12

3.3

a b

V

8 . 0

MHz pF

t stg ( µs)

C0.5

9 . 6 1

V

t on ( µs)

2.8

4 4 . 8

9 . 3 1.35 1.35 0.85


4.2

10.0

mA

2.54

tf ( µs)

2.6

) 5 . 3 1 ( 0.45

2.54 2.2

–0.12 0.6typ 1.4typ 0.4typ a) Part No. b) Lot No.

B C E

(Unit: mm)


(V CE = 1V)

12

100m A

10 60mA

) A ( C I


1.3

A A 0 m 0 m 1 5 0 2

10


8 40mA

6 20m A

4

1.0

) V ( ) t a s (

8

) A (

6

C I

E C 0.5

) ) r e re t u ) t u r a r e e ra p t u e m p r a e t e m p e t e m s a e t e s C ( a e s C ( C a º 5 ( C 2 ºC 1 5 2 º C

V

4 12 A

IB = 10mA

2

6 A I C = 1 A

0

0

2

4

0 0.005 0.01

6

1

0

3

400


(V CE = 1V)

400

Typ

5

5 º C 1 2

50

E F

h

) W / C º 1 (

º C 2 5 0 º C 3 –

100

100

50

a j

10

10

0.1

1

5 3 0.02

10 12

0.1

1

IC (A)

0.2 1

10

40

1 0 1 0 m s 0 m s D

5

30

) W ( 20 C P

) A ( 1


0.5

10

10


0.1 0 –0.05 –0.1


1 m s

C

20

C I

–0.5

–1

IE (A)

–5 –10 –12

0.05 3

1000


30 10

T f

100

t (ms)


Typ

) z H M (

10 12

0.5

IC (A)


1.0 1.1

V BE (V)


5 3 0.02

0.5

0

IB (A)


h

2

0 3 –

0.1

V CE (V)

E F

9 A

3 A

5

10

50

VCE (V)

100

2 0

1 5 0 • 1 5 0 • 2 10 0 50 •50 •2 • 10 0 • 2 Without heatsink

0

25

50

75

100

125

150

Ta (ºC)

87




Ratings

Unit

VCBO

200

VCEO

120

V V

VEBO IC

8 7 (pulse 14) 3 30 (Tc=25ºC)

IB PC Tj

–55 to +150

Test Conditions VCB = 200V VEB = 8V IC = 50mA

IEBO

Ratings 100max 100max

V(BR) CEO hFE

A

VCE (sat) VBE (sat) fT

VCE = 12V, IE = –0.5A

COB

VCB = 10V, f = 1MHz

VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A


V

RL ( Ω )

IC (A)

50

16.7

3


–5

3.3

a b

V

8 . 0

MHz pF

30typ 110typ

IB1 (A)

IB2 (A)

t on ( µs)

t stg ( µs)

0.3

–0.6 0.5max 3max 0.5max

C0.5

9 . 6 1

V

0.5max 1.2max

2.8

4 4 . 8

70 to 220

9 . 3 1.35 1.35 0.85


4.2

10.0

µ A

120min

V A W ºC ºC

150

Tstg

Symbol ICBO


2.54

tf ( µs)

2.6

) 5 . 3 1 ( 0.45

2.54 2.2


B C E

(Unit: mm)


m A 2 0 0

5

) A ( C I

■ V CE (sat) — IB Characteristics (typ.) 3

6

m A 1 0 0

4

A 6 0 m A 4 0 m

3

20m A

) V ( ) t a s (

5

2

E C

V 2

4

C I

3

1

2

3

0 0.005 0.01

4

0.1

V CE (V)

1

5 A

3 A

I C = 1 A

1

1

300

(V CE = 4V)

300

1 25 º C

E F

h

100

C – 3 0 º

h 50

5 7

■ j-a — t Characteristics 5

a j 0.5

50

1

20 0.01

0.1

IC (A)

0.5

1

5 7

0.2 1

10


20

5

30

) z H M 20 (

) A ( C I

f

T

30 natural air cooling Silicone grease Aluminum heatsink Unit: mm

1 0 m s

20

W i t h i n f i n i t e h e 1 C 5 0 • a t P 1 5 s i n k 0 • 10 2 1 0 0 50 • 50 • 2 • 1 0 0 • 2

) W (

1 0.5

10


0.1 0 –0.01

–0.1

–1

IE (A)

88

–5

0.05 5

10

50

VCE (V)

1000


1 0 0 µ s

10

Typ

100

t (ms)

IC (A)


1.0 1.1

) W / C 1 º (

2 5 º C

100

40

0.5

V BE (V)

Typ

0.5

0 0

2


0.1

0 3 –

IB (A)


20 0.01

) r e ) t u ) re a r re t u e p tu ra ra e m p e t e m p e t e m s e a e t C s ( e a s a º C ( C 5 ( C 2 ºC 1 5 ºC 2

2

1

E F

) A (

IB =10mA

0

(V CE = 4V)

7

m A 1 5 0

5

0


100

200

2 0

Without heatsink

0

25

50

75

Ta (ºC)

100

125

150

Power Transistor 2SD2141



Ratings

Unit

Symbol

VCBO VCEO

380±50 380±50

V V

ICBO V(BR) CEO hFE VCE ( sat )

VEBO IC IB PC Tj Tstg

IEBO

6

V

6 (pulse 10) 1 35 (Tc=25ºC)

A A

150

ºC ºC


Test Conditions

Ratings

VCB = 330V VEB = 6V

10max 20max

IC = 25mA

330 to 430 1500min 1.5max

VCE = 2V, IC = 3A IC = 4A, IB = 20mA


V

3.3

2.8

C0.5

4 4 . 8 9 . 6 1

V a b

W

–55 to +150

4.2

10.0

µ A

8 . 0

2.6

9 . 3 1.35 1.35 0.85 2.54

) 5 . 3 1 ( 0.45

2.54 2.2


B C E

(Unit: mm)




10

3

150mA 120mA

m A 2 0 A 1 8 m

m A 9 0 0 m A 6

4 m A

) A ( C I

2 m A

5

0

IB = 1m A

0

2

4

) V ( ) t a s (

2

V

1

) A ( C I

IC = 7A

E C

0

6

3A

5A

) r e ) e ) r t u r e tu r a t u e ra p r a e m e p p t e m m t e te s e a e e C s ( s a a ( C º C C ( 5 2 1 º C º C 0 5 3 2 –

5

1A

0.2 0.5

1

V CE (V)

5

10

0 0

50 100 200

1.0

IB (mA)

■ hFE — IC Characteristics (typ.) 10000 5000


(V CE = 2V)

10000

2.4

V BE (V)


2.0

5

5000

Typ

1000 E 500

5 º C 1 2 º C 2 5 5 º C – 5

1000 E F

F

h

h

500

) W / 1 C º ( a j

100 50

0.5

100 50

10 0.02

0.1

0.5

1

5

10

20

0.02

0.1

0.5 1.0

IC (A)

1

10

100


10 1 1 1 m 0 0 m 0 m s s D C s

5

) z H M ( 20

30

) W (

1 ) A 0.5 ( C I

f

T

0.1

10

C

–0.5 –1

IE (A)

–5


20

P Without heatsink natural air cooling

10

0.05

0.01 1

1000


20

30

–0.05 –0.1

0.1

t (ms)


Typ

0 –0.01

10

IC (A)


5

5

10

50 100

VCE (V)

500

2 0

1 5 0 • 1 5 0 • 2 50 • 50 • 2 1 0 0 • 1 00 • 2

Without heatsink

0

25

50

75

100

125

150

Ta (ºC)

89




Ratings

Unit

Symbol

VCBO

65±5

V

ICBO

VCEO VEBO IC

65±5 6 ±6 (pulse ±10)

V V A

IEBO VCEO hFE

IB PC

1 30 (Tc=25ºC)

A W

Tj

150

ºC

VCE (sat) VFEC Es/b

–55 to +150

ºC

Tstg

Test Conditions

Ratings

(Ta=25ºC) Unit

VCB = 60V

10max

µ A

VEB = 6V IC = 50mA VCE = 1V, IC = 1A

10max 60 to 70 700 to 3000

µ A

IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

0.15max 1.5max 200min

V V mJ

External Dimensions TO220F (full-mold) 4.2

10.0

3.3

V

12

RL ( Ω )

IC (A)

12

VBB1 VBB2 (V) (V)

1

10

IB1 (mA)

–5

30

IB2 (mA)

t on ( µs)

–30

t stg ( µs)

0.25

9 . 6 1

a b

8 . 0 9 . 3 1.35 1.35 0.85

tf ( µs)

0.8

C0.5

4 4 . 8

Typical Switching Characteristics VCC (V)

2.8

2.54

2.6

) 5 . 3 1 ( 0.45

2.54 2.2

0.35


B C E

(Unit: mm)


■ V CE (sat) — IB Temperature Characteristics (typ.) 0.75

20mA


(IC = 1.5A)

6

30mA 5

8 10mA

)

A ( C I

) 0.5

5mA 4

0

)

A ( 3 C I

Ta = –55ºC 25ºC 75ºC 125ºC

E C

V0.25

3mA

2

4

V ( ) t a s (

6

2

IB = 1mA

0

1

2

3

4

Ta=55ºC 25ºC 75ºC 125ºC

1 0

5

1

5

10

V CE (V )

50 100

0

400

0

0.5

IB (mA )



5000

1.0

1.5

V BE (V )


(V CE = 1V)

5000

5

Typ

)

1000

1000 E 500 F

E 500 F

h

Ta = –55ºC 25ºC 75ºC 125ºC

h

100

100 50 30 0.01

0.05 0.1

0.5

1

5

10

50 30 0.01

0.05 0.1

IC (A )

1

0.5

1

5

10

0.3

1

5

10

30 0 . 5 1 1 m 0 m s m s e s e c 1 e c 0 c 0 D . m C s e ( T c = c

10 5 Typ

) z H M 15 (

)

A ( C 1 I

T f

10

500 1000


20

25

50 100

t (ms )


20

0.5

a j

IC (A )


W / C º (

2 5 º C )


20

) W ( 1 5 0 • 1 5 1 0 0 • 0 • 2 1 0 0 • 2

C

P 10

0.5

5 0 • 5 0 • 2


5


Without heatsink

0 –0.01

–0.05 –0.1

–0.5 –1

IE (A )

90

–5 –10

0.1

1

5

10

V CE (V )

50

100

0

0

50

100

Ta (ºC)

150


Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg

Ratings 200 150

Unit V V

6

V

8

A A

1 35 (Tc=25ºC) 2 (Ta=25ºC, No Fin) 150 –55 to +150

W

Electrical Characteristics Symbol ICBO IEBO

Test Conditions VCB=200V VEB=6V

VCEO hFE

150min 2000min

V

VCE=2V, IC=6A

VCE ( sat ) VBE ( sat )

IC=6A, IB=6mA IC=6A, IB=6mA

1.5max 2.0max

V V

IC=50mA

Ratings


100max 10max

External Dimensions TO220F (full-mold) 10.0

mA

4.2 3.3

2.8

C0.5

4 4 . 8 9 . 6 1

a b

8 . 0 9 . 3 1.35 1.35 0.85

ºC ºC 2.54

2.54

2.6

) 5 . 3 1 ( 0.45

2.2

B C E


91

Power Transistor FP812



Ratings

Unit

Symbol

VCBO VCEO

–120 –120

V V

ICBO

–6

V

–8 (pulse –12) –3 35 (Tc=25ºC) 150

A A

VCEO hFE


IEBO

Test Conditions

Ratings

VCB = –120V VEB = –6V

10max 10max

IC = –50mA

–120min

VCE = –4V, IC = –3A IC = –3A, IB = –0.3A

VCE (sat)



–55 to +150

3.3

V V

–0.3max

RL ( Ω )

IC (A)

–12

4

–3

VBB1 VBB2 (V) (V) –10

IB1 (mA)

IB2 (mA)

t on ( µs)

t stg ( µs)

tf ( µs)

–30

30

2.5

0.4

0.6

5

C0.5

9 . 6 1

a b

8 . 0


2.8

4 4 . 8

70min

W ºC ºC

4.2

10.0

µ A

9 . 3 1.35 1.35 0.85 2.54

2.6

) 5 . 3 1 ( 0.45

2.54 2.2


B C E

(Unit: mm)

■ IC — V CE Characteristics (typ.) –8

■ V CE (sat) — I B Characteristics (typ.)

A A A m 0 m m 0 0 5 0 0 2 – 1 – 3 –


–2

– 1 0 0m A

(V BE = –4V)

–8 Ic = –3A

– 75 m A

–6

–6 –50mA

) A ( –4 C I

–25mA

Ic = –5A

) A ( ) t –1 a s (

) A ( –4 C I

E C

V –2

0

Ic = –1A

IB = –10mA

0

–1

–2

–3

0 –5

–4

–10

–50

V CE (V)

–100

0

–500 –1000 –2000

0

–0.5

IB (mA)


500 Tc = 125ºC

E F

h 100

50

) 5 º C 2 = T a ( F i n N O Tc = 25ºC

) 10 W 5 / C º (

75ºC 25ºC

E F

h 100

a j

–55ºC

1 0.5

Single Pulese

50

50 30 –0.01

–0.05 –0.1

–0.5 –1

–5 –8

30 –0.01

–0.05 –0.1

IC (A)

–0.5

–1

–5 –8

0.1 0.05 0.0002 0.001

0.01

IC (A)


–12 –10

D . C ( T c = 2 5 º C )

) A ( –1 C I

H

M ( T f 10

10

100


1 0 m 1 0 0 s e c m

20

1


1 m s e c

–5

Typ

0.1

t (sec)


–1.5


(V CE = –4V)

Typ

–1.0

V BE (V)

■ hFE — IC Temperature Characteristics (typ.) (V CE = –4V)

500

) z

Tc = –40ºC 25ºC 75ºC 125ºC

–2

s e c

30 W i t h i n f i n i t e h e 2 0 a t 0 • s i 2 0 n k 0 • 2

) W ( 20 C

P

–0.5 10

1 00 • 1 0 0 • 2

natural air cooling Without heatsink

Without heatsink

0 0.01

0.05 0.1

0.5

IE (A)

92

1

5

10

–0.1 –3

–5

–10

–50

V CE (V)

–100 –150

0

0

50

100

Ta (ºC)

150

Power Transistor



Ratings 115±10 115±10

VEBO IC IB

Unit

V

IEBO

A A

VCEO hFE VCE (sat)

W

1.2 (Ta=25ºC, No Fin) 150

ºC ºC

–55 to +150

min

Ratings typ

max

115

10 10 125

800

1500

0.08

0.12

VCB=105V VEB=6V

6

IC=50mA

105

VCE=1V, IC=1A

400

IC=1.2A, IB=12mA

VFEC

I FEC=6A

ES/B

L=10mA

External Dimensions TO220S

(Ta=25ºC)

Test Conditions

ICBO

±6 (pulse ±10)

Tj Tstg

Symbol

V V

1 50 (Tc=25ºC)

PC

MN611S

1.25

Unit µ A µ A

4.44±0.2

10.2±0.3

) 4 . 1 (

1.3±0.2

V

1.5

. 0 6 . 1 8 ±

V

45

a

3 . 5 . 0 0 . + – 3 0 0

V

1.6

b ) 5 . 1 (

mJ 1.27±0.2

3 . 5 . 0 0 + –

0 . 3

Typical Switching Characteristics

+0.2

0.1 –0.1

+0.2

0.86 –0.1

0.4±0.1

±0.2

VCC ( ) V

RL ( Ω )

12

12

VBB1 VBB2 ( V ) ( V )

10

IC ( A )

IB1 ( mA )

IB2 ( mA )

1

30

–30

–5

ton ( µs)

1.2

tf ( µs)

t stg ( µs)

2.54±0.5

2.54±0.5

0.2typ 5.7typ 0.4typ a) Part No. b) Lot No. (Unit: mm)



(Ta = 25ºC)

8

(Ta = 25ºC)

0.75 IC = 2A

) A ( C I

7

30mA

6

20mA

) 0.5 V (

10mA

5

IC = 1.2A

) t a s (

5mA

4

E C

3

V0.25

3mA 2 IB =1mA

1

IC = 0.5A

0

0 0

1

2

3

4

5

6

0

10

V CE (V)

100

1000

IB (mA)

■ V CE (sat) — IB Temperature Characteristics (typ.) ■ IC — V BE Temperature Characteristics (typ.) (IC = 1.2A)

0.75

■ IFEC — V FEC Temperature Characteristics (typ.)

(V CE = 1V)

7

7

6

) 0.5 V (

6 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

5

) t a s (

) A ( C I

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

E C

V0.25

0

4 3

10

100

2

1

1 0 0

0.5

IB (mA)

(V CE =1 V)

5000

1.5

0


E F

0.1

1

10

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

30 0.01

0.1

Ic (A)

50

1

a j

10

) A ( C I

j-c

1

1

2

3

Ic (A) ■ PT — Ta Derating 60 50 40

) W (

PT =50µs PT =500µs PT =1ms PT =10ms

1

C

30

P 20

Without heatsink

t (s)

0

10

1

0.1

ton

(Ta = 25ºC)

20

j-a FR4 (70 • 100 • 1.6mm) Use substrate

0.01

tf

0.1

■ Safe Operating Area (Single pulse)

(Tc = 25ºC)

0.1 0.001

Ta = 25ºC V CC = 12V IB1 = –IB2 = 30mA

Ic (A)

■ j-c • j-a — t Characteristics (Single pulse)

) W / 10 C º (

tstg

f t • 1 g t s t • n o t

E F

100

1.5

10

) c e s µ (

h

100

1.0


(V CE =1 V)

1000

h

30 0.01

0.5

V FEC (V)

5000

typ

1000

1.0

V BE (V)

■ hFE — IC Characteristics (typ.) (Ta = 25ºC)

c j

C E 3

F I

2

1000

Ta = 150ºC 125ºC 75ºC 25ºC –55ºC

4

0 0

•

5

) A (

10

10

0

0.1 1

10

V CE (V)

100 200

0

25

50

75

100

Ta (ºC)

125

150

93

Power Transistor MN638S



Ratings 380±50 380±50


Unit

Symbol

V V

ICBO V(BR) CEO hFE VCE (sat)

Test Conditions

Ratings

VCB=330V VEB=6V

10max 20max

IC=25mA

330 to 430 1500min

V

VCE=2V, IC=3A IC=4A, IB=20mA

1.5max

V

IEBO

6

V

6 (pulse 10) 1 60 (Tc=25ºC)

A A

150

ºC ºC

(Ta=25ºC) Unit µ A mA

1.3±0.2

a

. 0 6 . 1 8 ±

4.44±0.2

10.2±0.3

) 4 . 1 (

3 . 5 . 0 0 . + – 3 0 0

W

–55 to +150


1.6

b

) 5 . 1 (

+0.2

0.1–0.1

1.27±0.2

3 . 5 . 0 0 + –

0 . 3

+0.2

0.4±0.1

0.86 –0.1 ±0.2

1.2

2.54±0.5

2.54±0.5


10


■ V CE (sat) — I B Characteristics (typ.)


(V BE =4V)

10

3

150mA 120mA

m A 2 0 A 1 8 m

m A 9 0 0 m A 6

4 m A

) A ( C I

) V ( ) t a s (

2 m A

5

IB= 1m A

2

E C

V

0

0

2

4

) A ( C I

IC = 7A

0

6

5A

3A

1

) r e ) e) r t u r e tu r a t u e ra p r a e m e p p t e m m t e te s e a e e C s ( s a a ( C º C C ( 5 2 1 ºC ºC 0 5 3 2 –

5

1A

0.2 0.5

1

V CE (V)

5

10

0 0

50 100 200

1.0


10000 5000

■ j-c • j-a —t Characteristics

(V CE = 2V)

10000 5000

Typ

1000 E F

h

h

500

100

) W / 10 C º (

5 º C 1 2 º C 2 5 5 º C – 5

1000

E 500 F

j-a

a j

•

100 50

2.4

V BE (V)

IB (mA)


2.0

c j

100

j-c

1

50

10 0.02

0.1

0.5

IC (A)

94

1

5

10

20

0.02

0.1

0.5

IC (A)

1.0

5

10

0.1 0.001

0.01

0.1

t (s)

1

10

Surface-mount Power Transistor



Ratings 65±5 65±5

VEBO 6 IC 6 IC (pulse) 10 ( Pw 1mS, Duty 25% ) IB 10 PC 1.5 *1 Tj 150 Tstg –55 to +150

SSD103

Unit V V

ICBO

V

IEBO

Symbol

VCEO hFE VCE (sat) VFEC Es/b

A A W °C °C

(Ta=25ºC)

Test Conditions

min

VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA

Ratings typ

max

65 800 0.11 1.25

10 10 70 1500 0.15 1.5

60 400

VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH

80

External Dimensions SOP8

Unit 0.7±0.2

µ A

5.4Max

µ A

8

V

0 t o 10°

5 a x a M

b

V V mJ

7 . 4

c

3 . 0

2 . 0

±

2 . 6 0 to 0.1

±

4 . 4

d

1

4 +0.15

1.27±0.25

0.42 –0.05

+0.15

0.1 7 –0.05

2 . 0

±

5 . 0

*1: FR4 70mm•100mm•1.6mm

(drain heatsink copper foil area 25• 25mm) 5.0±0.2

2 . 0

±

5 . 1

a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm)

■ V CE (sat) — IC Temperature Characteristics (typ.)


(V CE = 1V)

6

0.75

30mA

IC /I B = 100

20mA

6


5 10mA

5

) A ( C I

4

) 0.5 V ( ) t a s (

5mA

3

Ta = –55 ºC 25ºC 75ºC 125ºC

E C V0.25

3mA

2

0

1

2

3

4

0

0 0.01

5

0.1

2000

f t •

500

1.0

1.5

V BE (V)

tstg V CC = 12V IB1 =–IB2 = 30mA

1

g t

Ta = 125 ºC 75ºC 25ºC –55ºC

s 0.5 t • n o t

tf ton

0.1 0.1

0.5

5

) S µ (

1000

50 0.01

0

10

■ ton • tstg • t f — IC Characteristics (typ.)

(V CE = 1V)

100

1

IC (A)


E F

3

1

V CE (V)

h

Ta = 125 ºC 75ºC 25ºC –55ºC

2

IB = 1mA

1 0

4

) A ( C I

1

10

IC (A)

0

1

2

3

IC (A)



20 10 5

) A ( C I

1 m 1 s 0 m s

0 . 5 m s

5, 6, 7, 8

1

1 0.5 natural air cooling Without heatsink

2, 3, 4

0.1 1

5

10

50

100

V CE (V)

95

Surface-mount Power Transistor Array SDA03


Ratings

Unit

VCBO

–60

VCEO

–60

V V

VEBO IC IB PT Tj

Symbol ICBO

Test Conditions VCB = –60V VEB = –6V IC = –25mA

IEBO

–6

V

–6 (pulse –12) –1 3 (No Fin)

A

150

ºC ºC

Tstg


VCEO hFE

A


External Dimensions SMD-16A

µ A

–60min

VCE = –4V, IC = –2A IC = –2A, IB = –0.1A

VCE (sat)


3 . 0

±

0 . 1

V

16

V

3 . 0

±

2 . 0

RL ( Ω )

IC (A)

–12

12

–1

VBB1 VBB2 (V) (V) –10

5

±

± 3 . 0 . 6 8

5 1 . 0 o t 0


2 . . 0 5 0

± 8 . 0 . 9 3

W

–55 to +150

+0.15

0.75 –0.05

100min –0.4max

IB2 (mA)

t on ( µs)

t stg ( µs)

tf ( µs)

–50

50

0.4

1.75

0.22

9

x a m 8 . 6

+0.15

a b Pin 1

0.3 –0.05

IB1 (mA)

2.54±0.25

0.89±0.15

0.25

8

20.0max

19.56±0.2

x 2 . a 0 m ± 6 0 . . 4 3 2 . 0

±

4 . 1


■ IC — V CE Characteristics –6

■ V CE (sat) — IC Temperature Characteristics (typ.) –3

–100mA

–200mA


–50mA

–5

–5

–30mA

–4

) A ( –3 C I

–20mA

–2

–10mA

) –2 V ( ) t a s (

Ta = 150ºC 75ºC 25ºC –55ºC

–4

) A ( –3 C I

E C

V –1

IB = –5mA

0

–1

–2

–3

–4

–1 0 –0.05

–5

–0.1

–1

■ hFE — IC Temperature Characteristics V CE = –4V 500

) c e s µ (

f t •

E F

h

g t s t • n o t

Ta = 150ºC 75ºC 25ºC –55ºC –0.1

–0.5

–1

–10

–1.0

■ j-a — t Characteristics (Single pulse) 50

5

30 –0.01

0

ton 1

V CC = 12V IB1 = –IB2 = 50mA

0.5

1

tstg –0.5

IC (A)

–1

–5

–10

0.3 0.001

0.01

0.1

■ PT — Ta Derating

–20

1

t (s)

IC (A)


(Ta = 25ºC)

) W / 10 C º ( 5 a j

tf

0.1

0.05 –0.5 –0.1

–1.5

V BE (V)

■ ton• tstg• t f — IC Characteristics

1000

50

0

–10

IC (A)

V CE (V)

100

Ta = 150ºC 75ºC 25ºC –55ºC

–2

–1 0

(V CE = –4V)

–6 IC /I B = 20


4

–10

1 m s 3

1 0 m s 2 0 m s

) A ( C –1 I

Without heatsink

16

) W ( 2 T P

15

14

13

12

11

10

9

–0.5 1


–0.1 –3

–5

–10

V CE (V)

96

–50

–100

0

2

0

50

100

Ta (ºC)

150

4

6

8

2

Surface-mount Power Transistor Array SDA04



Symbol

Ratings

Unit

Symbol

VCBO VCEO

–60 –60

V V

ICBO

VEBO IC IB PT Tj

–6

V A

VCEO hFE

A

VCE (sat)

W ºC ºC

–55 to +150

Ratings

VCB = –60V VEB = –6V

–10max –10max

IEBO

–6 (pulse –12) –1 2.5 (No Fin) 150

Tstg

Test Conditions

IC = –25mA

–60min

VCE = –4V, IC = –2A IC = –2A, IB = –0.1A

100min

(Ta=25ºC) Unit µ A µ A

RL ( Ω )

IC (A)

–12

12

–1

VBB1 VBB2 (V) (V) –10

5

3 . 0

2.54±0.25

0.89±0.15

0.25

±

0 . 1

V

+0.15

0.75 –0.05

16

V

–0.4max

3 . 0

±

2 . 0

2 . . 0 5 ± 0

± 8 . 0 . 9 3

± 3 . 0 . 6 8

5 1 . 0 o t 0



+0.15 0.3 –0.05

IB1 (mA)

IB2 (mA)

t on ( µs)

t stg ( µs)

tf ( µs)

–50

50

0.4

1.75

0.22

9

x a m 8 . 6

a b Pin 1

8

20.0max

19.56±0.2

x 2 . a 0 m ± 6 0 . . 3 4 2 . 0

±

4 . 1


■ IC — V CE Characteristics –6

■ V CE (sat) — IC Temperature Characteristics (typ.) –3

–100mA

–200mA


–50mA

–5

–5

–30mA

–4

) A ( –3 C I –2

–20mA

) –2 V ( ) t a s (

–10mA

V –1

Ta = 150ºC 75ºC 25ºC –55ºC

–4

E C

–2

IB = –5mA

0

–1

–2

–3

–4

–1 0 –0.05

–5

–0.1

–1

hFE — IC Temperature Characteristics V CE = –4V 500

) c e s µ (

f t •

E F

h

–0.1

–1

–10

ton 1

V CC = 12V IB1 = –IB2 = 50mA

0.5

0.05 –0.5 –0.1

tf

–0.5

–1

–5

(Ta = 25ºC)

1

–10

0.3 0.001

0.01

0.1

1

2

t (s)

IC (A)


–20

–1.5

) 10 W / C º 5 ( a j

tstg

IC (A)


–1.0

50

g t s t • n o 0.1 t

Ta = 150ºC 75ºC 25ºC –55ºC

30 –0.01

–0.5

■ j-a — t Characteristics (Single pulse)

5

50

0

V BE (V)


1000

100

0

–10

IC (A)

V CE (V)

■

Ta = 150ºC 75ºC 25ºC –55ºC

) A ( –3 C I

–1 0

(V CE = –4V)

–6 IC /I B = 20


4

–10

1 m s 3

1 0 m s 2 0 m s

) A (

Without heatsink

16

) W 2 (

15

T

C –1 I

10

9

P

–0.5 1

2

8


–0.1 –3

–5

–10

–50

V CE (V)

–100

0

0

50

100

150

Ta (ºC)

97

Surface-mount Power Transistor Array SDC09



Ratings 65±5 65±5

Unit

VEBO IC

6

V

6 (pulse 10 * ) 1

A

2.8 150

W ºC ºC

IB PT Tj Tstg

Symbol ICBO

V V

IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA

400 to 1500 0.15max

V

IFEC = 6A L = 10mH, single pulse

1.5max 80min

V mJ

VCEO hFE VCE (sat) VFEC Es/b

Ratings 10max 10max 60 to 70

IEBO

A

–55 to +150




µ A

3 . 0

±

0 . 1

V

2.54±0.25

0.89±0.15

0.25

+0.15

0.75 –0.05 16

3 . 0

±

2 . 0

2 . . 0 5 0

± 8 . 0 . 9 3

±

± 3 . 0 . 6 8

5 1 . 0 o t 0

9

x a m 8 . 6

+0.15

a b Pin 1

0.3 –0.05

8

20.0max

19.56±0.2

* PW 100µs, Duty 1% x 2 . a 0 m ± 6 0 . . 4 3 2 . 0

±

4 . 1


■ IC — V CE Characteristics


8 IB= 30mA

6 5

) A ( C I

0.5

5mA

E 0.3 C

V

3mA

0.2

2 1mA

1

0

1

2

3

0 0.0001

5

0.001

0.01

1

10

V CC =12V IB1=– IB2 =30mA

1

g t s t • n o t

Ta=150ºC 100ºC 75ºC 25ºC –55ºC

0

0.5

1.0

1.5

2.0

2.5

3.0

0.05 0.1

1

100


6

10 0.5 ms

5

50•50•1.6mm Use substrate 1

) 3 W (

1

10

t (ms)


1ms

1.0

3

4 13 15 16

5

6

8

42•31•1.0mm Use substrate

T

P 0.5

2

14

10ms

11

1 0.1 0.05 0.5

2

1

5

10

V CE (V)

98

50

100

1.2

0.1 0.1

Ta=25ºC

5

0.8

(Use substrate 42•31•1m)

IC (A)


0.6

) W / 1 C º ( a j

ton tf

IC (A)

20

0.4

■ j-a — t Characteristics (Single pulse)

tstg

f t •

E F

0.1

0.2

10

) c e s µ (

1000

50 0.01

0

V BE (V)

10 V CE=1V

100

0

0.1


5000

) A ( C I

2

IC (A)

hFE — IC Temperature Characteristics

h

3

1

V CE (V)

■

) A ( C I

0.1

4

Ta=150ºC 100ºC 75ºC 25ºC –55ºC

4 Ta=150ºC 100ºC 75ºC 25ºC –55ºC

a s (

4

0

5

) V ( 0.4 ) t

10mA

3

IC /I B =100

0.6

20mA

(V CE = 4V)

6

0.7

7


0 –50

0

50

Ta (ºC)

100

150

7

9 10 12

1000

Power Transistor Array SLA8004


Absolute Maximum Ratings (Ta=25ºC) Ratings

Symbol VCBO VCEO VEBO

NPN

PNP

60 60

–55 –55

6 –6 12 –12 –3 3 5 (Tc=25ºC, No Fin)

IC IB PT Tj Tstg

Unit

Symbol

V V

ICBO

V

VCEO hFE VCE (sat) VFEC

IEBO

A A W W

40 (Tc=25ºC) 150

ºC

–55 to +150

ºC

(Ta=25ºC)

NPN

PNP

Test Conditions

Ratin gs

VCB = 60V VEB = 6V IC = 25mA

100max 60max

Test Conditions

Unit

Ratings

VCB = –55V –100max VEB = –6V –60max IC = –25mA –55min

60min

31±0.2

µ A

24.4±0.2

mA

16.4±0.2

3.2±0.15 •3.8 4.8±0.2 1.7±0.1

V 3.2±0.15

VCE = –1V, I C = –3A

VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

External Dimensions SLA 12pin (LF817)

80min I C = –6A, IB = –0.3A –0.35max IFEC = 10A 2.5max

V V

±0.15

2 . 2 . 0 0

2 . 0

±

±

9 . 6 ± 1 9 . 2 9 1

a b

5 . 0

±

5

2.45±0.2 (Rootdimension)

4–(R1)

1.2

R-end

) 3 (

+0.2

0.85 –0.1 ±0.15

1.45

+0.2

0.55 –0.1 4±0.7

11•P2.54±0.1= (27.94) (Rootdimension)

31.3±0.2


■ IC — V CE Characteristics (typ.) (PNP)

–12

A = m 0 I B 0 –10 2 –

(NPN)

12

A 0 m – 1 5 – 100m A

A A 0 m 0 m 1 5 0 2

10

1 2 3 4 5 6 7 8 9 10 11 12


100m A

(Unit: mm) 60m A

–8

–60m A

) A ( –6 C I

40mA

6

–10mA

0

–1

–2

–3

–4

–5

20mA

4

–20mA

–2 0

) A ( C I

–40m A

–4

8

IB = 10m A

2 0

–6

0

2


6


(V CE = – 1V ) ( P N P )

300

4

V CE (V)

V CE (V)

(V CE = 1V) (NPN)

400

Typ

Typ

100

100 E F

E F

h

h 10

50

10

2 –0.02

–0.1

–1

5 3 0.02

–10 –12

IC (A)

■ hFE — IC Temperature Characteristics (typ.) 125ºC

(V CE = 1V) (NPN)

400

–30ºC

5 º C 1 2 º C 2 5 0 º C – 3

100 E F

E F

10 12


25ºC

100

1

IC (A)

(V CE = –1V ) (PNP)

300

0.1

50

h

h 10

10

2 –0.02

–0.1

–1

–10 –12

IC (A) ■ V CE (sat) — IB Characteristics (typ.)

0.1

1

1012

IC (A) ■ V CE (sat) — IB Characteristics (typ.)

(PNP)

–1.4

) V ( ) t a s (

5 3 0.02

(N PN)

1.3


4

1.0

–1.0 IC = –12A –9A –6A

E C

V –0.5

R1: 500Ω Typ. R2: 500Ω Typ.

V

–1A

12A

I C = 1 A

0 –7 –10

–100

IB (mA)

–1000 –3000

9

5

E C 0.5

–3A

8

R2

) V ( ) t a s (

0 5

10

3 A

100

6 A

3 6

7 10

2

12

9 A

R1 1

1000

11

3000

IB (mA)

99

Surface-mount Power Transistor Array SPF0001


Absolute Maximum Ratings (Ta=25ºC) Symbol VCBO

Ratings 115±10

VCEO

115±10

Unit

Symbol

V V

ICBO

VEBO IC

6

V

IEBO

±6 (pulse ±10)

IB PT *

1 2.5 (Ta = 25ºC)

A A

VCEO hFE

Tj

150

Tstg

VCE (sat)

W ºC ºC

–55 to +150

VFEC Es/b

(Ta=25ºC)

Test Conditions

min

Ratings typ

max


105

115

10 10 125

VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA

400

800 0.08

1500 0.12

1.25

1.5

I FEC = 6A L = 10mH

External Dimensions SPF 20pin

Unit 14.74±0.2

µ A

1.0 –0.05 Fin thickness

11

V V

3 . 0

2 . 0

a

±

5 . 0 1

±

2 . 0

b

V mJ

45

+0.1

13.04±0.2 20

µ A

5 . 7

±

2

10

1 +0.15

1.27 ±0.25

* Use glass epoxy substrate ( FR4) 70mm•100mm•1.6mm

0.4 –0.05

+0.15

2 . 0

0.25 –0.05

±

5 . 2

(11.43)

4-( 0.8)

1

10

) 5 0 . 3 (



(V CE = 1V)

1000

F1

20

(IC = 1.2A)

0.5

) 7 . 4 (

F2

(2.4)


11

(13.54)

(Unit: mm)

500

150°C

) V (

25°C E 100 F

) t a0.25 s (

–55°C

h

150°C 25°C –55°C

E C

V

50

10 0.1

0.5

1

0 0.001

56

0.01

0.1

1

IB (A)

IC (A) ■ IC — V EC Temperature Characteristics (typ.)


6

10

5

8

4

) A (

) A (

6

C I

4

2

2

0

150°C 25°C –55°C

3

C I

150°C 25°C –55°C

1 0 0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

0.2

0.4

■ Safe Operating Area (single pulse)

) A ( C I

0.8

1.0

1.2

1.4

■ Transient thermal resistance characteristics 100

20 10

0.6

V BE (V)

V EC (V)

0 . 5m 1 m s s

) W / C ° ( f j

1

(82•36•1mm at the time of mounting the recommended pattern of the glass epoxy board)

2 circuits operate

j-a

10


1 circuits operate 2 circuits operate 1 circuits operate

F1

F2

j-f

1

•

3

a j

8

0.1

18,19 0.1

1

10

V CE (V)

100

100

200

0.01 0.00001 0.0001 0.001

0.01

0.1

Power time (s)

1

10

100

12,13

Power Transistor Array STA315A



Ratings

Unit

VCBO VCEO

35±5 36±5

V V

VEBO IC IB PT

6

V

2 (pulse 3 * ) 30 3 (Ta=25ºC)

mA

Tstg

VCE = 4V, IC = 0.7A

VCE (sat) VFEC RB

ºC ºC

Ratings 10max 2.7max

IC = 25mA

VCEO hFE

W W

–55 to +150


IEBO

A

13.5 (Tc=25ºC) 150

Tj

Symbol ICBO

V

0.2max 0.5max

V V V Ω kΩ mJ

IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A

2.5max 800±120 2.0±0.4

Es/b

L = 10mH, single pulse

External Dimensions STA3 (LF400A) 20.2±0.2

mA

31 to 41 400min

RBE

* PW 1ms, Duty 25%


50min

2 . 0

2 . 0

2 .

b

±

0 0 . 3 . ± . 9 1 3 1 2

±

a

5 . 0 ±

7 . 4 0.5±0.15 7•2.54=17.78±0.25

RL ( Ω )

IC ( A )

12

12

1


VBB1 VBB2 ( V ) ( V ) 10

IB1 ( mA )

IB2 ( mA )

ton ( µs)

t stg ( µs)

tf ( µs)

5

0

1.0

8.5

2.5

–5

■ V CE (sat) — IB Temperature Characteristics

1 E

2 B

2 . 0

2 . 0 ±

± . 5 . 0 . 2 0 1 4

±

3 C

4 B

5 C

6 B

7 C

8 E


■ V CE (sat) — IC Temperature Characteristics

(IC = 0.5A)

0.5

A A m 0 m 1 2 3

5 1 . 0

C1.5±0.5

Typical Switching Characteristics VCC ( V )

(2.54)

1.0±0.25

3 IC /I B = 100

8mA 5mA

2

) V (

3mA

) A ( C I

) t a0.25 s (

2mA

E C

0

) t a s (

Ta = 125ºC 75ºC

E C

25ºC –40ºC

V

1

2

) V (

IB = 1mA

V

1

0 0

1

2

3

4

5

1

6

10

V CE (V)

3000

1000 E 500 F

Ta = 125ºC 75ºC 25ºC –40ºC 0.5

1

4

0.1

V CC = 12V IB = 5mA –IB = 0A

tstg

) 10 W / C º 5 (

ton

a j

1 0

0.5

1.0

1.5

2.0

1

10

Ic (A)

100

1000

t (ms)


(per element)

5

Single pulse

tf

IC (A)


1

20

f 5 t • g t s 1 t • n 0.5 o t

h

5

0.5


50

) S 10 µ (

0.1

0

IC (A)


(V CE = 4V)

50 0.01

0

400

IB (mA)

■ hFE — IC Temperature Characteristics

100

100

Ta = 125ºC 75ºC 25ºC –40ºC


20

1 m s

1 0 m s 3

) W ( 10

) 1 A ( C I 0.5


T

P

2 1


5

4 RBE

7

6

8

W i th o u t h e a ts i n k

0.1 1

RB

5

10

V CE (V)

50

0

0

50

100

150

Ta (ºC)

101




Ratings 35±5 35±5

Unit

VEBO

6

V

IC

3 1

A A

PT

2.5 (Ta=25ºC) 12 (Tc=25ºC)

W W

Tj

150

ºC ºC

IB

Tstg

Symbol ICBO

V V

–55 to +150


10max 10max

IC = 25mA

35±5

VCE = 4V, IC = 0.5A

500min

IEBO VCEO hFE VCE (sat) Es/b


Ratings

External Dimensions STA3 (LF400A) 20.2±0.2

µ A

V

IC = 1A, IB = 5mA

0.5max

V


150min

mJ

2 . 0

2 . 0

2 .

b

±

0 0 . 3 . ± . 9 1 3 1 2

±

a

5 . 0 ±

7 . 4 0.5±0.15


RL ( Ω )

IC (A)

12

12

1


7•2.54=17.78 ±0.25

IB1 (mA)

IB2 (mA)

ton ( µs)

tstg ( µs)

tf ( µs)

5

5

1.3

4.7

1.2

–5

(2.54)

1.0±0.25

5 1 . 0

1

2 C

2 . 0

2 . 0 ±

± 2 . 5 . 0 . 0 1 4

C1.5±0.5

±

3 B

4 E

5 E

6 B

7 C

8



A A A m 0 m 5 1 8 m 1

■ V CE (sat) — IB Temperature Characteristics 1

A 6 m

V CE = 4V

4mA 3

3mA

) A ( C I

) V ( ) t 0.5 a s (

2mA

1

2

V

25ºC –55ºC

0 0.002

3

0.01

V CE (V)

5000

20

f t • g t s t • n o t

E1000 F

h

Ta = 125ºC 75ºC 25ºC –55ºC 0.1

0.5

1

3

) A ( C I

0.5

0.5

5

10

V CE (V)

1 0.5

0.1

0.5

1

5

0.1 0.1

1

10

1000

t (ms)


W i t h i n f i n i t e h e a t s i n k ( A l l c i r c u i t s o p e r a t e )

10

T

P 5

50

100

15

) W (

0.2

102

a j

2

3

W it h o u t h e at s in k ( A ll c i r c u it s o pe ra te )

2

) 5 W / C º (

ton

0.3 0.05

1 m s 1 0 m s

D C ( T c = 2 5 º C )

1.5

Single pulse

10

tf

1


1 0 0 m

1.0


5

(per element)

1

0.5

Ic (A)


5

0

V BE (V)

V CE = 12V IB1 = –IB2 = 5mA

IC (A)

10

0

0.4

20

tstg

) 10 S µ (

0.05

Ta = –55ºC 25ºC 75ºC 125ºC

1

■ ton• tstg• t f — IC Characteristics (typ.)

(V CE = 4V)

100 0.01

0.05 0.1

2

IB (A)


500

) A ( C I

Ta = 125ºC 75ºC

E C

IB =1mA

1

0

4

5mA

2

0


(IC = 1A)

0

0

50

100

Ta (ºC)

6

4 150

7

5

5000




Ratings

Unit

VCBO

35±5 36±5

V V

6

V A

VCEO VEBO IC

2 (pulse 3* ) 30 4 (Ta = 25ºC)

IB PT

Tstg * PW

1ms, Duty

VCEO hFE VCE (sat)

W W

Ratings 10max 2.7max 31 to 41

RBE Es/b

25%

V

400min 0.2max 0.5max

IFEC = 2A

2.5max 800±120 2.0±0.4

kΩ

50min

mJ

RB L = 10mH, single pulse

External Dimensions STA4 (LF412) ±0.2

25.25

mA

VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA

VFEC

ºC ºC

–55 to +150


IEBO

mA

18 (Tc = 25ºC) 150

Tj

Symbol ICBO


V V

2 . 0

b

2 . 0

2 .

±

0 0 . 3 . ± . 9 1 3 1 2

±

a

5 . 0

±

5 . 3 ±0.25

V

RL ( Ω )

IC (A)

12

12

1



Ω

IB2 (mA)

ton ( µs)

t stg ( µs)

tf ( µs)

5

0

1.0

8.5

2.5

■ V CE (sat) — IB Temperature Characteristics

±0.3

0

±0.05

9 • 2.54=22.86

5 1 . 0

±0.5

2 . 0

±

2 . 0

±

± 5 . . 0 . 2 0 1 4

±

C1.5


■ V CE (sat) — IC Temperature Characteristics

(IC = 0.5A)

0.5

A A m 0 m 1 2 3

±0.3

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

IB1 (mA)

–5

0.5

0


(2.54)

±0.15

1.0

3 IC /I B = 100

8mA 5mA

) V ( ) t a0.25 s (

2

) A (

3mA

C I

2mA

0

Ta = 125ºC 75ºC

E C

V

1

IB = 1mA

2

1

0 0

1

2

3

4

5

1

6

10

3000

1000

1

0.5

1

4

0.1

V CC = 12V IB = 5mA –IB = 0A

tstg

Single pulse

10

) W / C 5 º (

tf ton

a j

1 0

0.5

1.0

IC (A)

1.5

2.0

1

10

100

Ic (A)


1000

t (ms)


(per element)

5

20

g t s 1 t • n 0.5 o t

Ta = 125ºC 75ºC 25ºC –40ºC

5

0.5


5

f t •

500

0.1

0

IC (A)

50

) S 10 µ (

50 0.01

0

400

■ ton•tstg•tf — IC Characteristics (typ.)

(V CE = 4V)

100

100

IB (mA)

■ hFE — IC Temperature Characteristics

h

Ta = 125ºC 75ºC 25ºC –40ºC

E C

V

25ºC –40ºC

V CE (V)

E F

) V ( ) t a s (


20

1 m s

1 0 m s


) W ( 10

) 1 A ( C I 0.5

T

P

3

2 1


5

4 RBE

7

6

9

8

10

W i t h o ut h ea t s in k

0.1 1

RB

5

10

V CE (V)

50

0

0

50

100

150

Ta (ºC)

103

Power Transistor Array STA460C


Ratings 60±10 60±10

Unit V V

VEBO IC ICP

6 ±6 ±10 (Pw 1ms, Du 50%) 3.2 ( Ta = 25°C ) 18 ( Tc = 25°C ) 150

V A A

–40 to +15

°C

PT Tj Tstg

W °C


(Ta=25ºC)

Test Conditions

ICBO

min


IEBO VCEO hFE VCE (sat) VFEC Es/b

50 700

VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

Ratings typ

max

60 1500 0.09 1.25

10 10 70 3000 0.15 1.5

200

External Dimensions STA4 (LF412)

Unit

±0.2

25.25

µ A µ A

V

2 . 0

2 . 0

2 .

b

±

0 0 . 3 . ± . 9 1 3 1 2

±

a

5 . 0

±

V V mJ

5 . 3 ±0.25

(2.54)

±0.15

1.0

0.5

±0.3

±0.3

0

0

±0.05

9•2.54 =22.86

5 1 . 0

±0.5

2 . 0

2 . 0

±

± . 5 . 0 . 2 0 1 4

±

C1.5

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E




10

5000

9

A A 0 m 2 0 m 3 = I B

8 7

(VCE = 1V)

5000

1000

1000

75°C 25°C

E500 F h

E500 F h

E C

V 0.25

3m A

3 100

100

1

50

50

0

30 0.01

2

1m A

0

1

Ta = –55°C 25°C 75°C 125°C

) 0.5 V ( ) t a s (

–55°C

5m A

(IC /IB = 100)

0.75

Ta = 125 °C

typ

A 1 0 m

) 6 A ( 5 C I 4

■ hFE — IC Temperature Characteristics (typ.) ■ V CE (sat) — IC Temperature Characteristics (typ.)

(V CE = 1V)

2

3

4

5

V CE (V)

0.05 0.1

0.5 1

5

30 0.01

10

0.05 0.1

IC (A)


0.5 1

0 0.01

10

0.05 0.1

0.5 1

IC (A)


0.75

5

■ j-a — PW Characteristics

(V CE = 1V)

6

5 10

IC (A)

20 10

5

5

) 0.5 V ( ) t a s (

) W / C ° 1 ( a j 0.5

4

) A ( C I

E C

V0.25

3

IC =3A

1

1.5A

0.5A 0 1

5

10

50 100

500

0

C 5 2 1 = C C a T 2 5 5 5 – °

2 75°C

0

°

°

0.5

IB (mA)

0.1 1.0

VBE (V)

0.05 0.1

1.5

0.5 1

5 10

50 100

5001000 2000

PW (ms)

Equivalent Circuit Diagram ■ PT — Ta Derating 20

■ Safe Operating Area Silicone grease used Vertical self-excitation

15

3

0 . 5 1 1 0 m m m s s s

10 5


) W ( 10 T P

20

) A ( 1 C I 0.5

2

8

7

5 Without heatsink

Single pulse

4

0.1 Without heatsink 0 –55

Ta=25°C

0

50 Ta (ºC)

104

100

150

0.05 0.5

1

5

10

V CE (V)

50 100

9




Ratings

Unit

VCBO VCEO

65±5 65±5

V V

VEBO IC

6

V

IB PT Tj Tstg

±6 (pulse ±10)

A

1 3.2 (Ta = 25ºC)

A

18 (Tc = 25ºC) 150

W ºC ºC

Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b

W

–55 to +150


Ratings 10max 10max


VCE = 1V, IC = 1A

400 to 1500 0.15max 1.5max 80min

±0.2

25.25

µ A

60 to 70

IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

External Dimensions STA4 (LF400B)

V

2 . 0

V V mJ

b

2 . 0

2

. 0 0 . 3 . ± . 9 1 3 1 2 ±

±

a

5 . 0

±

7 . 4 (2.54)

±0.15

±0.25

0.5

1.0

±0.05

9•2.54=22.86


RL ( Ω )

IC (A)

12

12

1


IB1 (mA)

IB2 (mA)

t on ( µs)

t stg ( µs)

tf ( µs)

30

–30

0.2

3.9

0.2

–5

5 1 . 0

±0.5±

2 . 0

2 . 0

±

± 5 . . 0 . 2 0 1 4

C1.5

±

1 2 3 4 B C E

5

6

7 8 9 10 B C E




IC /I B = 100

20mA

5 10mA

) V ( 0.5 ) t a s (

5

) A ( C I

4

5mA 3mA

0.25

C I

0

1

2

3

4

0

0 0.01

5

0.1

2000

500

Single pulse

5

) W / C º ( 1

V CC = 12V IB1 = –IB2 = 30mA

1

a - 0.5 j

tf 0.1

ton

0.1 0

10

1

2

3

0.05 0.1

1

Ic (A)

IC (A)


10

100

2000

t (ms)


20

1.5

10

g t s 0.5 t • n o t

1

1.0


tstg

f t •

Ta = 125ºC 75ºC 25ºC –55ºC 0.1

0.5

V BE (V)

5

) S µ (

50 0.01

0

10


1000

100

1

IC (A)

(V CE = 1V)

h

3

1


E F

Ta = 125ºC 75ºC 25ºC –55ºC

2

IB = 1mA

V CE (V)


20

10 5

) A ( C I

) A (

Ta = –55ºC 25ºC 75ºC 125ºC

V

2

0

4

E C

3

1

(V CE = 1V)

6

0.75

30mA

6


1 m 1 s 0 m s

0 . 5 m s

15

) W ( T


10

3

P

1 0.5

2

8

7

5 W it h o u t h e a ts i n k


0.1 1

5

10

V CE (V)

50

100

0

0

50

4 100

9

150

Ta (ºC)

105




Ratings

Unit

VCBO VCEO

115±10 115±10

V V

VEBO IC

6

V

IB PT

IEBO

±6 (pulse ±10)

A

1 3.2 (Ta=250ºC)

A

Tj

18 (Tc=25ºC) 150

Tstg

–55 to +150

Symbol ICBO VCEO hFE VCE (sat) VFEC Es/b

W W ºC ºC


Ratings

IC = 50mA

105 to 125


10max 10max

External Dimensions STA4 (LF400B) ±0.2

25.25

µ A

V

2 . 0

VCE = 1V, IC = 1A

400 to 1500

IC = 1.2A, IB = 12mA IFEC = 6A

0.12max 1.5max

V V


45min

mJ

b

2 . 0

2 .

±

0 0 . 3 . ± . 9 1 3 1 2

±

a

5 . 0

±

7 . 4 (2.54)

±0.15

±0.25

0.5

1.0

±0.05

9•2.54=22.86


RL ( Ω )

IC (A)

12

12

1


IB1 (mA)

IB2 (mA)

t on ( µs)

t stg ( µs)

tf ( µs)

30

–30

0.2

5.7

0.4

–5

5 1 . 0

±0.5

2 . 0

2 . 0

±

± 5 . . 0 . 2 0 1 4

C1.5

±

1 2 3 4 B C E

5

6

7 8 9 10 B C E



■ V CE (sat) — IC Temperature Characteristics (typ.) I C /I B = 100

7

30mA

6

20mA

6

) V ( 0.5 ) t a s (

10mA

5

5mA

4

) A (

Ta = –55ºC 25ºC 75ºC 150ºC

E C

3mA

0.25

C I

1

2

3

4

5

0

0 0.01

6

0.1

(V CE = 4V)

2000 1000 500 Ta = 150ºC 75ºC 25ºC –55ºC

100 50 30 0.01

0.5

1.0

) S µ (

5

f t •

g t

1

s t •

0.5

n o t

1

■ j-a — t Characteristics 100 50

tstg

a j

1

2

1

3

0.1 0.0001 0.001

0.01


■ PT — Ta Derating (Tc = 25ºC)

20

0.75

0.1

1

10

t (s)

Ic (A)

IC (A)

Single transistor operated

0.5

V CC = 12V IB1 = –IB2 = 30mA

ton 0

10

Dual transistor operated

Single pulse

) W 10 / 5 C º (

tf

1.5

V BE (V)

10

0.1 0.1

0

5



h

1

IC (A)

V CE (V)

E F

–55ºC 3

1

IB = 1mA

0

4

2

2 1

Ta = 150ºC 75ºC 25ºC

5

V

3

0

(V CE = 1V)

7

0.75

8

) A ( C I



IC = 1.2A 15

) V 0.5 ( ) t a s (

) W (

Ta = 150ºC 75ºC 25ºC –55ºC

E C

V

0.25

T

3


10

P

2

8

7

5 W it h o u t h e a ts i n k

0

1

10

100

IB (mA)

106

1000

0

0

50

4 100

Ta (ºC)

150

9

100

1000




Ratings

Unit

VCBO VCEO

65±5 65±5

V V

ICBO

VEBO IC

6

V

IEBO

6 (pulse 10) 1 20 (Tc=25ºC)

IB PC Tj

4 (Ta=25ºC) 150

Tstg

–55 to +150

Symbol

A

VCEO hFE

A

VCE (sat)

W

Test Conditions

min

Ratings typ

VCB=60V VEB=6V

max

IC=50mA

60

65

10 10 70

VCE=1V, IC=1A IC=1.5A, IB=15mA

400

800 0.09

1500 0.15

1.25

1.5

IFEC=6A L=10mH

VFEC Es/b

ºC ºC

(Ta=25ºC)

80

External Dimensions STA4

Unit ±0.2

25.25

µ A µ A

2 . 0

b

2 . 0

2 .

±

0 0 . 3 . ± . 9 1 3 1 2

±

V

a

5 . 0

±

5 . 3

V V mJ

(2.54)

±0.15

±0.25

0.5

1.0

±0.05

9•2.54=(22.86)

(Root dimension) 5 1 . 0

±0.5

2 . 0

2 . 0

±

± 5 . . 0 . 2 0 1 4

C1.5

±

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E




IC /I B = 100

20mA

5 10mA

) V ( 0.5 ) t a s (

5

) A ( C I

4

5mA 3mA

0.25

C I

0

1

2

3

4

Ta = 125ºC 75ºC 25ºC –55ºC

3 2

IB = 1mA

1 0

0 0.01

5

0.1

V CE (V)

1

0

10

0.5

1.5


(V CE = 1V)

2000

1.0

V BE (V)

IC (A)


5

tstg

1000

) S µ (

500 E F

100

V CC = 12V IB1 = –IB2 = 30mA

1

f t •

g t 0.5

Ta = 125ºC 75ºC 25ºC –55ºC

h

s t •

n

o t

tf ton

0.1

50 0.01

0.1

1

0

10

1

2

3

Ic (A)

IC (A)



20


20

10 5

) A ( C I

) A (

Ta= –55ºC 25ºC 75ºC 125ºC

V

2

0

4

E C

3

1

(V CE = 1V)

6

0.75

30mA

6


1 m 1 s 0 m s

0 . 5 m s


15

) W ( T

10

3

P

1

5

4

5

1

5

10

V CE (V)

50

100

0

6

8 10

W i t h ou t h e at s in k


0.1

9

2 1

0.5

7

0

50

100

150

Ta (ºC)

107

MOS FET

2SK3710 (under development)

Features

Applications

● ON

● Power

● Built-in

resistance 0.0060 Ω max. G-S bidirectional Zener diode ● Trench MOS structure

● Various


steering motor motors ● Replaces mechanical relays

) 4 . 1 (

(5)

) 5 4 . 0 (



Ratings

Unit

VDSS

60

Symbol

Test Conditions

VGSS

V(BR) DSS

A

IGSS

ID = 100µ A VGS = ±20V

ID (pulse)

20 70 140

V V A

PD EAS Tch

130 400 150

W

IDSS VTH

mJ ºC

RDS (ON) VSD

VDS = 10V, ID = 250µ A VGS = 10V, ID = 35A ISD = 50A

Tstg

–55 to +150

ºC

t rr

ISD = 25A, di/dt = 50A/ µs

110

VDS = 10V VGS = 10V f = 1.0MHz

9400 1400

ID

Ciss Coss Crss

108

(Ta=25ºC) min

Ratings typ

max

60 ±10

VDS = 60V, VGS = 0V

100 2 5.0 0.9

1100

4 6.0 1.5

Unit V µ A µ A

1.2

3 . 5 . 3 . 0 0 0 + –

5 1 . . 9 0 1

pF pF pF

+0.2

0.1 –0.1

±0.2

+0.2

0.86 –0.1

3 . 5 . 0 0 + –

3

) 5 . 1 (

2.54±0.1

2.54±0.1

10.2 ±0.3

1.3±0.2

2.6±0.2

±

V mΩ V ns

4.44±0.2

±0.1

0.4

) 3 . 1 (

(5.4)

2 . 0 ±

4 . 1

1

2

3

Details of the back (S=2/1)

(Unit: mm)

MOS FET

2SK3711

Features

External Dimensions TO-3P

Applications

● ON

● Power

● Built-in

resistance 0.006 Ω max. G-S bidirectional Zener diode Trench MOS structure ●

● Various

steering motor motors Replaces mechanical relays ●

15.6±0.4 13.6 9.6

0 . 2

3 . 0

0 9 . . 9 4 1

±


Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS

Ratings 60 20

ID ID (pulse) PD EAS Tch Tstg

70 140

Unit

V V A A W mJ ºC ºC

130 To be defined 150 –55 to +150

V(BR) DSS

ID = 100µ A VGS = +20V VDS = 60V, VGS = 0V

60

VDS = 10V, ID = 250µ A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/ µs

2

Ciss Coss Crss

100 4 6.0 1.2

5.0 0.9 70 7800 1250 990

3.2±0.1

2 3

) A ( 40 D I

(1)

(2)

(3)

V GS =5V

30

30

20

20

10

10 0

0.5

0

1

0

2

1.0

V DS = 10V ( )

500 Tc=–55°C 25°C 150°C

V DS (V)

) S ( ) s f y (

V0.4

0

8

35A

0

5

10

V GS (V)

■ RDS (ON) — I D Characteristics (typ.) 7.0

m8.0 (

) 4.0 N O3.0 ( S D R2.0

10

70

ID (A)

) W / 1 C º ( c - 0.1 j

Ω

m (

1

10

)10.0

Ω5.0

1

20

■ j-c — Pw Characteristics

V GS = 10V

12.0

6.0

15

V GS (V)

■ RDS (ON) — TC Characteristics (typ.) I = 35A D

Ta = 25ºC V GS = 10V

e R10

ID =70A

0.2

6

(Unit: mm)

■ Re (yfs) — ID Characteristics (typ.)

S D

4


1. Gate 2. Drain 3. Source

pF pF pF

) 0.6 V (

Tc=150°C 100°C 50°C 25°C 0°C –40°C

1.4

15.8±0.2

mΩ V ns

100

) A ( 40 D I

0.65 –0.1

5.45±0.1

0.8

50

+0.2

+0.2

1.05 –0.1

5.45 ±0.1

V

■ V DS — V GS Characteristics (typ.)

( V DS = 10V )

60 10V 8V 6V

50

) N6.0 O ( S D4.0

R

2.0

1.0 0

V

2.0±0.1

b

n i x m a 0 . m 0 0 . 2 4

µ A µ A

4.8±0.2

±

a

70

60

)

Unit

max ±10


80

70

0

min

■ ID — V GS Characteristics (typ.)

(Ta = 25ºC)

80

Test Conditions

IDSS VTH RDS (ON) VSD trr

RG =50Ω * Contact your sales rep for the details of warranty at Tch =175°C

■ ID — V DS Characteristics (typ.)

Symbol

IGSS

* 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, I L =20A, unclamped,

(Ta=25ºC) Ratings typ

2 . 0

0 8 . . 1 5

0

10

20

30

40

50

60

0 –60 –50

70

0

ID (A)

50

(Ta = 25ºC)

(Ta = 25ºC)

500 100

50

) A ( 40

O ( ) D S A ( 10 R C I

Tc=150°C 25°C –55°C

R

Coss

5 0 0 µ s ( 1 s 1 m h o t ) s ( 1 s h o t 1 0 ) m s ( 1 s h o t )

D T E I I M ) L

N

D I 30

0.1

20

1

Crss

0

10

20

30

V DS (V)

40

50

0

10

100

■ PD — TC Characteristics (With infinite heatsink)

140 120 100

) W ( 80 D

P 60 40

10 100

1

Pw (sec)

ID (pulse) max

60

Ciss

0.01


(Ta = 25ºC)

70

V GS =0V f =1MHz

) F p10000 ( e c n a t i c a 1000 p a C

0.01 0.0001 0.001

150

Tc (ºC)

■ Capacitance — V DS Characteristics ■ IDR — V SD Characteristics 50000

100

20 0

0.2

0.4

0.6

0.8

V SD (V)

1.0

1.2 1.4

0.1 0.1

1

10

V DS (V)

100

0

0

50

100

150

Tc (ºC)

109

MOS FET


Features


Applications

● ON

● Power

● Built-in

resistance 0.005 Ω max. G-S bidirectional Zener diode ● Trench MOS structure

● Various

steering motor motors ● Replaces mechanical relays ) 5 4 . 0 (


Ratings

Unit

VDSS VGSS ID ID (pulse) PD EAS Tch *

60 20 80 160

V V A A W mJ ºC ºC

Tstg

60 To be defined 150 –55 to +150

* Contact your sales rep for the details of warranty at Tch =175 °C

110

(Ta=25ºC) Ratings

Symbol

Test Conditions

V(BR) DSS

ID = 100µ A VGS = ±20V VDS = 60V, VGS = 0V

60

VDS = 10V, ID = 1mA VGS = 10V, ID = 40A ISD = 50A ISD = 25A, di/dt = 50A/ µs

1

IDSS VTH RDS (ON)

VSD trr Ciss Coss Crss


3 . 5 . 3 . 0 0 0 + –

5 1 . . 9 0 1

+0.2

0.1 –0.1

min

typ

max

Unit

1.2

+0.2

0.86 –0.1

) 5 . 1 (

2.54±0.1

2.54±0.1

1.3±0.2

2.6±0.2

±

±0.2


IGSS

4.44±0.2

) 4 . 1 (

(5)

3 . 5 . 0 0 + –

3

± 0.1

0.4

V ±10

4.0 0.9

100 2 5.0 1.5

µ A µ A

10.2±0.3

V

To be defined

mΩ V ns

10600 1600 1300

pF pF pF

) 3 . 1 (

(5.4)

2 . 0 ±

4 . 1

1

2

3


(Unit: mm)

MOS FET 2SK3800



Ratings 40 ±20

Unit V V A

±70

ID ID (pulse)*1 PD EAS*2 Tch Tstg

±140

A W mJ ºC ºC

80 (Tc=25ºC) 400 150 –40 to +150

Test Conditions

V(BR) DSS IGSS

ID = 100 µ A, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V

40

VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A

2.0 30

Ciss Coss Crss td (on) tr td ( off ) tf VSD trr Rth ( ch-c ) Rth ( ch-a )

* 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, I L =20A, unclamped, RG =50 Ω


Symbol

IDSS VTH Re (yfs) RDS (ON)

70

60

60

50

±10

100 4.0

3.0 50 5.0 5100 1200 860

VDS = 10V f = 1.0MHz VGS = 0V

6.0

100 100 300 130 0.9 110

ID = 35A VDD = 20V, RG = 22Ω RL = 0.57Ω, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/ µs

) 5 4 . 0 (

V S

1.2

1.2 1.56 62.5

0.86 –0.1 2.54±0.1

V GS = 4.5V

20

10

10 0

0.5

1.0

1.5

0

2.0

1.0

2.0

V DS (V)

) 3 . 1 (

2

3

6.0

ºC/ W ºC/ W

1.0

0

7.0


■ Re (yfs) — ID Characteristics (typ.) (V DS = 10V)

500 Tc= –55°C 25°C 150°C

) S ( ) s f y (

6.0

e R 10

35A

0

5

10

15

1

20

1

■ j-c — t Characteristics (Single pulse)

ID = 35A V GS = 10V

)

m ( 4.0

m (

Ω

■ Dynamic I/O Characteristics (typ.) (ID = 35A)

30

10

) W / C º ( c j

) N6.0 O ( S D4.0

D

R2.0

15

V DS

Ω8.0

) N O ( 3.0 S

70

ID (A)

10.0

) 5.0

10

V GS (V)

■ RDS (ON) — TC Characteristics (typ.) 12.0


(Unit: mm)

0.2

5.0

(5.4)

4 . 1

ID = 70A

4.0

0.4

±

(Ta = 25ºC)

V GS (V)


3.0

3

±0.1

2.54±0.1

1

V0.4

0

3 . 5 . 0 0 + –

2 . 0

S D

Ta= 150°C 25°C –55°C

+0.2

0.1 –0.1

10.2±0.3

) 0.6 V (

D 30 I

2.6±0.2

) 5 . 1 (

100

) 40 A (

20

1

) V (

20

10

) V (

V GS V DD = 8V 12V 14V 16V 24V

S D

V 10

0.1

R

S G

V 5

2.0

1.0 0

10

20

30

40

50

60

0 –60 –50

70

0.01 0

ID (A)

50

100

150

(Ta = 25ºC)

50000

0.1

50

D T E I I M ) L

O N (

) A 40 ( R

S ) R D A ( 10 C I

Ta= 150°C 25°C –55°C

Coss 20

10

P T = 1 0 µ s P T = 1 0 0 P T µ P T = 1 s = 1 m s 0 m s

10

20

30

V DS (V)

40

50

50

100

0 150

■ PD — TC Characteristics 90 80 70 60

) W ( 50 D

P 40 30

1

20

10

0

0

Qg (nC)

Crss

0

0

100

(Ta = 25ºC)

100

D 30 I

1

■ Safe Operating Area (single pulse) 500

60

Ciss

0.01

t (s)

70

V GS = 0V f = 1MHz

) F10000 p ( e c n a t i c1000 a p a C

0.00001 0.0001 0.001

Tc (ºC)

■ Capacitance — V DS Characteristics (typ.) ■ IDR — V SD Characteristics (typ.)

100

5 1 . . 9 0 1

1.3±0.2

±0.2


( ) V DS = 10V

3 . . 5 3 . 0 0 0 + – ±

+0.2

mΩ pF pF pF ns ns ns ns V ns

4.44±0.2

) 4 . 1 (

(5)

V µ A µ A

50

10V 5.5V 5.0V

D 30 I

0

Unit

max

0.8

) 40 A (

0

Ratings typ

min


70


(Ta=25ºC)

10 0

0.2

0.4

0.6

0.8

V SD (V)

1.0

1.2 1.4

0.1 0.1

1

10

V DS (V)

100

0

0

20

40

60

80 100 120 140 160

Tc (ºC)

111

MOS FET

2SK3801


Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*1 Tch Tstg

Ratings 40 ±20

Unit V V

±70

A A W mJ ºC ºC

±140

100 (Tc=25ºC) 400 150 –40 to +150

RG =50Ω

V(BR) DSS IGSS

ID =100µ A, VGS =0V VGS =±15V VDS =40V, VGS =0V

40

VDS =10V, ID =1mA VDS =10V, ID =35A VGS =10V, ID =35A

2.0 30

70

60

60

50

50

Unit

max

100 4.0

3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100

VDS =10V f =1.0MHz VGS =0V ID =35A VDD =20V, RG =22Ω RL =0.57Ω, VGS =10V ISD =50A, VGS =0V ISD =25A, di/dt =50A/ µs

0 . 2

V µ A µ A

±10

3 . 0

V S

6.0

0 9 . . 9 4 1

±

mΩ pF pF pF ns ns ns ns V ns

1.5 1.25 35.71

10V 5.5V 5.0V

D I

V GS = 4.5V

3.2±0.1

a b

2 3

20

20

10

10 0

0.5

1.0

1.5

0

2.0

0

1.0

2.0

V DS (V)

(2)

6.0

7.0

1.0

0


(3)

10.0

6.0

(V DS = 10V)

)

m ( 4.0

m6.0 (

) s f y (

35A

0

5

10

D

15

1

20

1

10

70

ID (A)

■ j-c — Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.) (ID = 35A)

30

10

) 1 W / C º ( c - 0.1 j

) N O ( S4.0 D

R2.0

e R10

15

V DS

Ω

) N O ( S3.0

Tc= –55°C 25°C 150°C

)100 S (

8.0

) 5.0 Ω

ID = 35A V GS = 10V

(Unit: mm)

1000

V GS (V)

■ RDS (ON) — TC Characteristics (typ.)



■ Re (yfs) — ID Characteristics (typ.)

(Ta = 25ºC)

V GS (V)


5.0

1.4

5.45 ±0.1

°C/W

0.2

4.0

0.65 –0.1

°C/W

ID = 70A

3.0

+0.2

+0.2

1.05 –0.1

(1)

V0.4 Ta= 150°C 25°C –55°C

2.0±0.1

15.8±0.2

S D

30

4.8±0.2

±

5.45 ±0.1

) 0.6 V (

) 40 A (

2 . 0

0 8 . . 1 5

n i x m a 0 . m 0 0 . 2 4


V DS = 10V ( )

15.6 ±0.4 13.6 9.6

0.8

30

0

Ratings typ

min


70

) 40 A ( D I

Test Conditions

Ciss Coss Crss td (on) t r td (off) tf VSD t rr R th (ch-c) R th (ch-a)

* 1: PW 100 µs, duty cycle 1% * 2: VDD =20V, L =1mH, IL =20A, unclamped,


Symbol

IDSS VTH Re (yfs) RDS (ON)


(Ta=25ºC)

R

) 20 V (

10

) V (

V GS V DD = 8V 12V 14V 16V 24V

S D

V 10

S G

V 5

2.0 1.0 0

0

10

20

30

40

50

60

0 –60 –50

70

0.01 0

ID (A)

50

100

150

Tc (ºC)

(Ta = 25ºC)

70

V GS = 0V f = 1MHz

) F10000 p ( e c n a t i c1000 a p a C

0.1

D T E I M I ) L

O N (

) A 40 ( R

S ) R D A ( 10 C I

Ta= 150°C 25°C –55°C

Coss 20

10

0

P T = 1 0 µ P T s = 1 0 0 P T µ s P T = 1 = 1 m s 0 m s

20

30

V DS (V)

112

40

50

0

50

100

0 150

■ PD — TC Characteristics 120 100 80

) W ( 60 D

P 40

1

Crss

10

0

Qg (nC)

20

10 100

0

100

(Ta = 25ºC)

100

50

D 30 I

1

■ Safe Operating Area (single pulse) 500

60

Ciss

0.01

Pw (s)

■ Capacitance — V DS Characteristics (typ.) ■ IDR — V SD Characteristics (typ.) 50000

0.00001 0.0001 0.001

0

0.2

0.4

0.6

0.8

V SD (V)

1.0

1.2 1.4

0.1 0.1

0 1

10

V DS (V)

100

0

20

40

60

80 100 120 140 160

Tc (ºC)

MOS FET



Ratings 40 ±20

Unit V V

±85

A A W mJ ºC ºC

±170

100 (Tc=25ºC) 730 150 –55 to +150

* 1: PW 100 µs, duty cycle 1% * 2: VDD =20V, L =1mH, I L =20A, unclamped, RG =50Ω


(Ta=25ºC)

Symbol

Test Conditions

V(BR) DSS IGSS

ID = 100µ A, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V

40


2.0 50

IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td ( off ) tf VSD trr

VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22Ω VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/ µs

min

Ratings typ

max ±10

100 4.0 2.1 10500 2400 1900 90 230 490 760 0.85 90

3.0

1.2


Unit

V µ A µ A V S mΩ pF pF pF ns ns ns ns V ns

1.3±0.2

a

3 . 5 . 0 0 . + – 3 0 0

. 0 6 . 1 8 ±

4.44±0.2

10.2±0.3

) 4 . 1 (

1.6

b

) 5 . 1 (

+0.2

0.1–0.1

1.27±0.2

3 . 5 . 0 0 + –

0 . 3

+0.2

0.86 –0.1

0.4±0.1

±0.2

1.2 2.54±0.5

2.54±0.5


113

MOS FET 2SK3851



Ratings 60 ±20

Unit V V

±85

A A W mJ ºC ºC

±280

150 280 150 –55 to +150

Test Conditions

V(BR) DSS


60


2.0 30

IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD trr

* 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, I L =20A, unclamped

■ ID — V DS Characteristics

Ratings typ

min

4.0 11500 1500 1100 60 25 370 65 0.87 70

ID = 42A VDD 16V RG = 22Ω VGS = 10V ISD = 50A, VGS = 0V ISD = 50A, di/dt = 100A/ µS

3 . 0

V

0 9 . . 9 4 1

±

S mΩ pF pF pF ns ns ns ns V

4.7

1.5

2 . 0

4.8±0.2

±

0 8 . . 1 5

a

2.0±0.1

3.2±0.1

b

n i x m a 0 . m 0 0 . 2 4

2 3

+0.2

+0.2

0.65 –0.1

1.05 –0.1

5.45 ±0.1

1.4

5.45 ±0.1 15.8 ±0.2

(1)

ns

■ V DS — V GS Characteristics V DS = 10V ( )

15.6 ±0.4 13.6 9.6

0 . 2

V µ A µ A

100 3.0

2.5


100

Unit

max ±10

■ ID — V GS Characteristics

(Ta = 25ºC)

90

Symbol

IGSS


(Ta=25ºC)

(3)


■ Re (yfs) — ID Characteristics

(Ta = 25ºC)

1.0

(2)


(V DS = 10V)

500

10V

80

0.8

80

70

100

4.5V

60

) A ( 50 D 40 I

) 60 A ( D I

30 20

) s f y (

S D

Ta = 150 °C 25°C –55°C

40

V GS = 4.0V

) S (

) 0.6 V ( V0.4 0.2

20

–55°C 25°C 150°C

e R 10

ID = 85A ID = 42A

10 0

0 0

0.4

0.8

1.2

1.6

2.0

0 0

1

2

V DS (V)

3

4

5

6

2

4

V GS (V)

■ RDS (ON) — I D Characteristics 6.0

)

) N3.0 O ( S2.0 D

5

1.0

0 0

10

20

30

40

50

60

70

80

0 –100

90

–50

0

ID (A)

50

80

R 40

D

40

20

20

10

Crss 500

0

0 20

30

V DS (V)

40

50

60

160

P 60

30 Coss

t (s)

) 100 W ( 80

D I

10

0.01

120 Ta = 150°C 25°C –55°C

60

) A ( 50

0

0.001

140

70

Ciss

1000

0.01 0.0001

■ PD — TC Characteristics

(Ta = 25ºC)

90

Ta = 25°C V GS = 0V f = 1MHz

) F p ( 10000 e c n a t i c a p a C

150

Tc (ºC)


100

0

0.2 0.4

0.6

0.8

V SD (V)

1.0

1.2 1.4

0

25

50

75

100

Tc (ºC)

10

ID (A)

) W 1 / C º ( c j 0.1

R2.0

1.0

1

10

D

R

1

10 12 14 16 18

7.0

6.0 Ω m ( 5.0 ) N4.0 O ( S 3.0

(

8

■ j-c — t Characteristics (Single pulse)

ID = 25A

8.0

Ω m4.0

6

V GS (V)

■ RDS (ON) — TC Characteristics V = 10V GS


) 5.0

114

0

125

150

0.1

1

10

50

100

MOS FET FKV460S



Ratings 40 +20, –10

Unit V V

Symbol

Test Conditions

V(BR) DSS

ID = 100µ A, VGS = 0V VGS = +20V VGS = –10V

±60

A

±180

A

PD Tch

60 (Tc=25ºC) 150

W ºC

IDSS VTH

Tstg

–55 to +150

ºC

Re (yfs) RDS (ON)

ID ID (pulse)*

* PW 100µs, duty

IGSS

1%

60

) A ( 30 D I

100

µ A

2.3

V

7 2800 1400


9

. ± 0 6 . 1 8

1.6

b

) 5 . 1 (

+0.2

0.1–0.1

1.27±0.2

3 . 5 . 0 0 + –

0 . 3

pF

600

a

3 . 5 . 0 0 . + – 3 0 0

S mΩ pF

1.3±0.2

+0.2

0.4±0.1

0.86 –0.1

ID = 25A VDD = 12V RL = 0.48Ω VGS = 10V

20 600

pF ns ns

250 100

ns ns


ISD = 50A, VGS = 0V

1.0

V

(Unit: mm)

1.5

1.2±0.2 2.54±0.5

2.54±0.5


V DS = 10V ( )

70


(Ta = 25ºC)

1.0

50

(V DS = 10V)

500

V GS = 3.0V

20

10

S D

Ta = 150ºC 25ºC –55ºC

V0.4

ID = 60A

0.2

25A

10 0

1

2

3

4

0

5

1

2

V DS (V)

3

0

4

0

5

14

Ω10

D

2.0

2.0 10

20

30

40

50

0 –60 –50

60

0

50

ID (A)

100

) F p ( e c n1000 a t i c a p a C

j-a FR4 (70• 100• 1.6mm)

Use substrate j-c

0.01 0.0001

150

0.001

10V

Coss Crss

D I T E I M

) L O N ( D S

5V 40

) A ( 30

) A (

R

20

10

R

10

20

V DS (V)

30 35

70

50

) 40 W ( D 30

P 1

20 10

0 0

10

60

P T = 1 0 m s

10

100

1

■ PD — TC Characteristics

P T = 1 m s

C I

V GS = 10V

D I

0.1

(Ta = 25ºC)

200 ID (pulse) max 100

50

Ciss

0.01


(Ta = 25ºC)

60

V GS = 0V f = 1MHz

60

t (s)


10

ID (A)

Tc (ºC)

(Ta = 25ºC)

5

• c -0.1 j

D

R4.0

1

a - 1 j

) N O6.0 ( S

R4.0

5

20

50

m ( 8.0

) N O6.0 ( S

15

) 10 W / C º (

12

)

Ω10

10

■ j-c • j-a — t Characteristics (Single pulse)

ID = 25A

14

m ( 8.0

e R

V GS (V)

■ RDS (ON) — TC Characteristics V = 10V GS


12

0

10

V GS (V)

■ RDS (ON) — I D Characteristics

) s 50 f y (

10A 0

–55ºC 25ºC 150ºC

) 100 S (

) 0.6 V (

) 40 A ( D 30 I

20

0

µ A

0.8

10V 5.0V 4.0V

40

)

+10 –5

4.44±0.2

10.2±0.3

) 4 . 1 (

60

50

0

1.3 20.0


(Ta = 25ºC) 3.5V

V

VGS = 10V, ID = 25A

tf VSD

Unit

max

40

VDS = 40V, VGS = 0V

t r t d (off)


Ratings typ

min

VDS = 10V, ID = 250µ A VDS = 10V, ID = 25A

Ciss Coss Crss t d (on)


(Ta=25ºC)

0

0.2

0.4

0.6

0.8

V SD (V)

1.0

1.2

0.1 0.1

0 1

V DS (V)

10

50

0

25

50

75

100 125

150

Tc (ºC)

115

MOS FET FKV660S



Ratings 60 +20, –10 ±60

A

±180

A

60(Tc=25ºC) 150

W ºC

ID ID(pulse) PD Tch Tstg

Unit V V

–40 to +150

Symbol

Test Conditions

V(BR)DSS

ID=100 µ A, VGS=0V VGS =+20V VGS =–10V

IGSS

Ciss Coss Crss t d(on) t r


(Ta = 25ºC)

180 160

10V 6V

140

4V

60

V GS = 3.5V

) A ( D I

0

10 1

0

2

4

6

8

10

0.001

12

0

1

2

3

300

ns


V

(Unit : mm)

) N O ( 0.015 S D R0.010

V GS = 10V

0.005

10

100

1.5

200

25A 0.2 5

0

6

10A 1 0

5

10

15

20

0

50

ID (A)

100

(Ta = 25ºC)

10000

V GS =0V f = 1MHz

) F p ( e c n1000 a t i c a p a C

Ciss

Coss

150

Crss 100 10

20

30

V DS (V)

■ Safe Operating Area (single pulse) (Ta = 25ºC)

500 ID (pulse) max

160 100

140 120

) A100 (

) A ( 10 D I

R

D 80 I

D T E I M I ) L

O N ( D S

R

P T P T = 1 m = 1 s 0 m s

60 1

40 20 0 0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V SD (V)

116

0.1 0.1

1

10

V DS (V)

10

■ Capacitance — V DS Characteristics

0

180

1

V GS (V)

Tc (ºC)

V GS = 0V

–55°C 25°C 150°C

e R 10

V GS = 10V

ID (A)

■ IDR — V SD Characteristics Ta = 25ºC

(V DS = 10V)

1000

) s f y (

0.4

V GS =4V

0 –60 –50

0.4±0.1


ID = 60A

0.005

1

ns

)100 S (

0.025

V GS =4V

+0.2 0.86 – 0.1 1.2±0.2 2.54±0.5

2.54±0.5

(Ta = 25ºC)

(ID = 25A)

) Ω 0.020 (

) N O ( 0.015 S D R0.010

0 . 3

V0.6

0.030

0.025

1.27±0.2

pF ns ns

■ RDS (ON) — TC Characteristics (Ta = 25ºC)

) Ω 0.020 (

0

4

+0.2 0.1–0.1

150 50 400 400

V GS (V)

0.030

) 5 . 1 (

3 . 5 . 0 0 + –

S D

Ta = 150 °C 100°C 50°C 25°C 0°C –55°C

V DS (V)


1.6

b

pF pF

) V0.8 (

0.01

20

0 . ± 0 6 . 1 8

1.0

0.1

40

a

3 . 5 . 0 0 3 . + – 0

S mΩ

14

1.3±0.2

1.2

4.5V

120

V

1.4

100

) A (100 D 80 I

µ A

2.5

■ V DS — V GS Characteristics ( ) V DS = 10V

1000

100

) 4 . 1 (

2500 900

1.0

ISD=50A, VGS=0V

VSD

µ A

11

ID=25A VDD =12V RL=0.48Ω VGS=10V

tf


1.0 20

+10 –5

4.44±0.2

10.2±0.3

V

VDS=10V f=1.0MHz VGS=0V

t d(off)

Unit

max

60

VDS=10V, ID=250µ A VDS=10V, ID=25A VGS=10V, ID=25A

Re (yfs) RDS(ON)

ºC

PW 100µs, duty 1%

Ratings typ

min

VDS=60V, VGS=0V

IDSS VTH


(Ta=25ºC)

100

40

50

100 200

Surface-mount MOS FET Array SDK06



Ratings

Unit

52±5 ±20

V V

ID ID (pulse) *1 PT

Test Conditions

V(BR) DSS

ID = 1mA, VGS = 0V VGS = ±20V VDS = 40V, VGS = 0V

±3

A

IGSS

±6

A

IDSS VTH

3 (Tc=25ºC, 4 circuits operate)

W

E AS * Tch

40 150

mJ ºC

Tstg

–55 to +150

ºC

2

Symbol

Re ( yfs ) RDS (ON)

VDS = 10V, ID = 250µ A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A

Crss t d (on) t r t d (off) tf VSD ■ I D — V DS Characteristics

min

Ratings typ

47

52

1.0 1.0

57 ±1.0

V µ A

100

µ A

1.8

V

2.5

S 0.2 0.25

0.25 0.3

3 . 0

±

0 . 1

+0.15

0.75 –0.05

±

2 . 0

2 . . 0 5 ± 0

± 8 . 0 . 9 3

± 3 . 0 . 6 8

5 1 . 0 o t 0

9

x a m 8 . 6

+0.15 0.3 –0.05

a b Pin 1

pF pF

20

ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10kΩ

2.0 7.4

pF µs µs

ISD = 1A, VGS = 0V

1.0

19.56±0.2

x 2 . a 0 ± m 6 0 . . 4 3 2 . 0

±

4 . 1

µs

3.3 4.2


µs

1.5

(Unit: mm)

V

■ R DS (ON) — I D Characteristics 0.8

20

V GS = 4V

V DS = 10V

10

5

Ta = 150ºC

V GS = 5V V GS = 10V

4

) A ( D I

0.6

) A ( D I

3

) Ω (

1

75ºC

) N 0.4 O ( S D

25ºC

R

2

0.1

V GS = 3V

Ta = –55ºC 25ºC 75ºC 150ºC

1 0

0

2

4

6

8

10

12

14

0.01

0

1

2

V DS (V)

3

4

5

0

6

0

1

2

3

4

5

6

ID (A)

■ Re (yfs) — I D Characteristics

0.5

■ I DR — V SD Characteristics 10

10 ID = 1A

V DS = 10V 5

V GS = 4V typ.

0.4

) Ω 0.3 (

8

) S (

) N O ( S 0.2 D

R

) A (

) s f y (

V GS = 10V typ.

50

100

0.2 0.05 0.1

150

D I

Ta = –55ºC 25ºC 150ºC

0.5

0

6


4

–55ºC

R

e 1 R

0.1

0

–55ºC 0.2

V GS (V)

■ R DS (ON) — TC Characteristics

–50

8

20.0max

Ω

200 120

V GS = 4V

2.54±0.25

0.89±0.15

0.25

16 3 . 0

Ω


6


Unit

max


Ciss Coss

*1 PW 100µs, duty 1% *2 VDD = 12V, L = 10mH, unclamped, R G = 10Ω

(Ta=25ºC)

0.5

1

2

0

6

0

0.2

0.4

ID (A)

Tc (ºC)

■ Safe Operating Area (single pulse) (Tc = 25ºC)

10 ID (pulse) max

) n ( o

D S

1.0

1.2

1.4


1 0 m s

R

) A (

0.8

1 0 0 µ s 1 m s

E D I T M I L

5

0.6

V SD (V)

15 16

13 14

11 12

9

10

1

D I

1

3

5

7

0.5 2

0.1 0.5

1

5

10

4

6

8

50

V DS (V)

117




Ratings 50 ±20

V V

±4.5 ±9

ID ID (pulse) *1 PT E AS *2 Tch

Unit

Test Conditions

V(BR) DSS

ID = 100µ A, VGS = 0V VGS = ±20V

A

IGSS

A

IDSS VTH

W


Tstg

Symbol

80 150

mJ ºC

–55 to +150

ºC

Re (yfs) RDS (ON)

18

100

ID = 1mA ID = 4.0A ID = 4.0A ID = 4.0A

1.3 5.0

1.8 9.0

0 . 1

0.89±0.15

0.25

±

2 . 0

2 . . 0 5 0

± 8 . 0 . 9 3

±

± 3 . 0 . 6 8

5 1 . 0 o t 0

+0.15

ns ns


ISD = 6A, VGS = 0V

1.0

V

(Unit: mm)

19.56±0.2

pF

1.5

x 2 . a 0 m ± 6 0 . . 4 3 2 . 0

±

4 . 1


(V DS = 10V)


(ID = 4A)

1.4

(V DS = 10V)

100

Ta=150°C

0.01

2 0

3

6

9

12

15

0.001

0

1

2

V DS (V)

) V0.8 (

0°C

Ta=150°C 25°C –55°C

0.20 Ta=150°C 75°C 25°C 0°C –55°C

e R

0

5

0

2

4

0.20

8

0.1 0.05 0.1

10

1

V GS = 4V

V GS = 10V

0.05

V DD =12V constant RGS = 50Ω V GS = 5V t r t d (off) t d (on) tf

W / S

R

–55°C

(single pulse) (Ta = 25ºC)

500

) s n ( 100 e m i T

D

0°C

0.05

0.20

) N O ( 0.10 S

25°C

■ S/W Time W — ID Characteristics

(ID = 4A)

) 0.15 Ω (

75°C

10

ID (A)

■ RDS (ON) — TC Characteristics (typ.)

Ta=150°C

R

0.05

6

V GS (V)

D

R

1

0.2 4

) N O ( 0.10 S

D

) s f y (

–55°C

0.4

(V GS = 4V)

) 0.15 Ω (

) 10 S (

V


(V GS = 10V)

) N O ( 0.10 S

25°C

V GS (V)


) 0.15 Ω (

3

1.0

S D0.6

Ta=150°C 75°C 25°C 0°C –55°C

V GS =3V

4

8

20.0max

60 40

) A ( D0.1 I

6

b Pin 1

0.3 –0.05

75°C V GS =10V

a

50 80

1

12

9

x a m 8 . 6

pF

1.2

) A 10 ( D 8 I

2.54±0.25

+0.15

0.75 –0.05

16 3 . 0

S Ω Ω

0.08 0.1

14

0

±

V

2.3 13.0

0.07 0.09

3 . 0

ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω

20 10

V GS =4V

16

±100


(Ta = 25ºC)

V nA µ A

pF ns ns

t d (off) tf


50

700 300 90

Crss t d (on) t r

VSD

Unit

max


Ciss Coss


Ratings typ

min

VDS = 50V, VGS = 0V VDS = 10V, VDS = 10V, VGS = 10V, VGS = 4V,


(Ta=25ºC)

10

0

0

2

4

6

8

10

0

12

0

2

4

ID (A)

6

8

10

0 –60 –50

12

0

ID (A)

50

100

5 0.1

150

0.5

Tc (ºC)

1

5

10

ID (A)

Equivalent Circuit Diagram ■ Capacitance — V DS Characteristics ■ ISD — V SD Characteristics (typ.) (Ta = 25ºC)

5000

6 Ciss

) A (

Crss

4 circuits operate 3 circuits operate 2 circuits operate 1 circuits operate

3

) W (

5 Ta =150°C 75°C 25°C 0°C –55°C

D 4

Coss

S I

3 2

T

15

2

1

P

1

10

100

0

0 0

0.3

0.6

0.9

V SD (V)

1.2

1.5

0

50

100

Ta (ºC)

150

16

13

3

2

1

1

V DS (V)

118

4

7

10 5 0.1

8

V GS =0V f =1MHz

) F1000 p ( e c n a t i 100 c a p a C

■ PT — Ta Characteristics

14

11

5

4

12

9

7

6

8

10




Ratings 120 ±20

V V

±6 ±10

ID ID (pulse) *1 PT E AS *2 Tch

Unit

Tstg

Test Conditions

V(BR) DSS

ID=100µ A, VGS=0V VGS=±20V

A

IGSS

A

IDSS VTH

80 150

W mJ ºC

–55 to +150

ºC


Symbol

Re (yfs) RDS (ON)

±5

100

V

2.0

3 . 0

±

0 . 1

±

0.2 0.25

pF

ns ns


ISD=6A, VGS=0V

1.0

V

(Unit: mm)

19.56±0.2

pF

1.5

x 2 . a 0 ± m 6 0 . . 4 3 2 . 0

±

4 . 1

■ R DS (ON) — I D Characteristics 0.30 0.25 V GS=4V

) 0.20 Ω (

6

) N0.15 O ( S D

Ta=–55ºC 25ºC 75ºC 150ºC

4

5

0

6

V GS=10V

R0.10

2

0.05

0

1.0

V DS (V)

2.0

3.0

0

4.0

0

2

4

V GS (V)

8

10

■ I DR — V SD Characteristics

50

0.45

6

ID (A)

■ Re (yfs) — I D Characteristics


0.40

8

20.0max

250 200

4

ID=4A

Pin 1

0.3 –0.05

V DS=10V

4

b

+0.15

Ω

8

8

3

a

100 300

) A ( D I

2

±

± 3 . 0 . 6 8

5 1 . 0

9

x a m 8 . 6

ID=4A VDD=12V RL=3Ω VGS=5V RG=50Ω

V GS=4.5V

1

2 . . 0 5 0

± 8 . 0 . 9 3

10

0

2 . 0

o t 0


12

+0.15

0.75 –0.05 16

3 . 0

S 0.15 0.2

2.54±0.25

0.89±0.15

0.25

pF ns ns

V GS=10V

0

V µ A µ A

400 130 30

16

) A ( D I

Unit

max

1.0 5.0


VDS=10V f=1.0MHz VGS=0V

t d (off) tf

■ I D — V DS Characteristics

Ratings typ

120

VDS=10V, ID=250µ A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A

Crss t d (on) t r

VSD

min

VDS=120V, VGS=0V

Ciss Coss


(Ta=25ºC)

6 V GS=0V

V GS=4V 5 10

) 0.30

) S (

Ω (

) N O ( S0.20 D

5

) A (

) s f y (

V GS=10V

e R 1

R

Ta=–55ºC 25ºC

0.5

0.10

–50

0

50

100

150

0.1

0.5

1

5

3

25ºC –55ºC

1 0

10

0

0.2

0.4

ID (A)

Tc (ºC)

(Ta = 25ºC)

20

1000 500

5

) A ( D I

1.2


1 m s 1 0 m s

RDS ( on) LIMITED

Coss

1.0

1 0 0 µ s

ID (DC) max

V GS =0V f=1MHz

0.8

ID ( pulse) max

10

Ciss

0.6

V SD (V)



) F p ( e c n 100 a t i c a 50 p a C

Ta=150ºC 75ºC

2

75ºC 150ºC

0.1 0.05

0

R D I

4

15

16

13

14

11

12

9

10

1 0 0 m s

1

1

3

5

7

0.5 2

4

6

8

Crss 10

0.1 0

10

20

30

V DS (V)

40

50

1

5

10

50

100 200

V DS (V)

119

MOS FET Array SLA5027


Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS

Ratings 60 ±20

V V

Symbol

Test Conditions

V(BR) DSS

±12 ±48

A

IGSS

A

5 (Ta=25ºC, 4 circuits operate)

W W

IDSS VTH

VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA

1.0

VDS = 10V, ID = 8A

6.0

ID ID (pulse)*1

60 (Tc=25ºC,4 circuits operate)

E AS*2

250 2.08

VISO Tch

(Fin to lead terminal) AC1000

150

mJ ºC/W Vrms ºC

Tstg

–55 to +150

ºC

j-c

Re (yfs) RDS (ON) Ciss Coss Crss t d (on) t r


t d (off) tf VSD

Ratings typ

min

ID = 100µ A, VGS = 0V VGS = ±20V

VGSS

PT

Unit

(Ta=25ºC)

External Dimensions SLA 12pin (LF800)

Unit

max

60 100

V µ A µ A

1.5 12.0

2.0

V

VGS = 4V, ID = 8A

0.07

0.08

S Ω


1100 500

ID = 8A VDD 30V RL = 3.75Ω VGS = 5V RG = 50Ω

50 250

ISD = 10A, VGS = 0V

1.0

±100

pF pF pF ns

170

24.4±0.2

2 . 0

±

s s e n k x c i a h t m e t 8 . a l 0 p s d i n a s e e L r

2 .

0 0 . ± 2 x . 6 0 . 0 a ± 1 3 1 9 . m 9 5 . ) 8 4 . 0 1 ( 7 . n 2 i m Pin 1 5 . 9

a b

12 0.85

1.2±0.15

+0.2 –0.1

0.55

+0.2 –0.1

2.2±0.7

1.45±0.15 11•P2.54 ±0.7 =27.94±1.0 31.5max

ns ns 1.5

4.8±0.2 1.7±0.1

16.4±0.2

ns

250 180

Ellipse 3.2±0.15 •3.8

31.0±0.2 3.2±0.15

1 2 3 4 5 6 7 8 9 10 11 12


V

(Unit: mm)


■ I D — V GS Characteristics

10

12

0.1 V DS = 10V

10

8

V GS = 4V

4V 5V 10V

) Ω (

8

6

) A ( D I

) A ( D I

V GS = 3V 4

6

2

) n0.05 o ( S D

Ta = 150ºC 75ºC 25ºC –55ºC

4

0

■ R DS (ON) — I D Characteristics

V GS = 10V

R

2

0

1

2

3

4

5

0

6

0

1

V DS (V)

2

3

0 0.1

4

1

V GS (V)


30

0.12

20

ID (A)

■ R e (yfs) — I D Characteristics


10

20 V DS = 10V

V GS = 4V

V GS = 0V

10

0.10 5

) Ω (

) S 10 (

) N O ( S0.06 D

) A (

) s f y (

V GS = 10V

R

D I

e R 5

R

0.02 –50

0

50

100

0.5

2 0.4

150

1

5


50 V GS = 0V f = 1MHz

E D n e I T V l i I M = 4

) A (

Coss

5

3

1

1

10

50

0.5 0.5

1

5

10

V DS (V)

50 100

6

4

2

Crss

V DS (V)

120

u s s A

ID (DC) max

D I

50

0.8

1.2


0 . 5 m s 1 m 1 0 s m s 1 0 0 m s

L S ) n V G ( o m e d S

R D

5

0.4

V SD (V)

(Ta = 25ºC)

10

1

0

ID (pulse) max

Ciss

100

0.1

20


2000

) F p ( 500 e c n a t i c a p a C

10

ID (A)

Tc (ºC)

1000

1

7

8

5

10

11

9

12

MOS FET Array SLA5098 (under development)


Ratings 40 ±20

20 40

ID ID (pulse)* E AS I AS PT

Unit V V A

A

To be defined To be defined 5 (

mJ A

)

Without heatsink, Ta=25 °C, All circuits operate

W

90 ( All circuits operate )

W

Tc=25°C,

Tch Tstg * PW 100µs, duty

150 –55 to +150 1%

ºC ºC


Test Conditions

V( BR ) DSS IGSS IDSS VTH Re (yfs) RDS (ON)


Ciss Coss Crss t d (on) t r t d (off) tf VSD t rr

VDS = 10V, ID = 250µ A VDS = 10V, ID = 10A VGS = 10V, ID = 10A VDS = 10V f = 1.0MHz VGS = 0V ID = 10A VDD = 14V RL = 1.4Ω VGS = 10V RG = 50Ω ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V di/dt = 100A/ µs

(Ta=25ºC)

min

Ratings typ

max

40 ±10 100

1.5 10

2.5 17 1450 420 260 40 40 200 100 0.85 45

1.2


Unit

V µ A µ A V S mΩ pF pF pF ns ns ns ns V

Ellipse 3.2±0.1 •3.8

31.0±0.2 3.2±0.1

24.4±0.2

4.8±0.2 1.7±0.1

16.4±0.2 s s e n k x c i a h t m e t 8 . a l 0 p s d i n a s e e L r

2 . 0 2 . ± 0 0

. ± 2 . x 6 0 . 0 a ± 1 3 1 9 . m 9 5 . ) 8 4 . 0 1 ( 7 . n 2 i m Pin 1 5 . 9

a b

15 +0.2

+0.2

0.65 –0.1

1.2±0.15

2.2±0.7

0.55 –0.1

+0.2

1.15 –0.1

14•P2.03±0.4 =28.42±0.8 31.5max


1 2 3 4 5 6 7 8 9 1 0 11 12 13 14 15

(Unit: mm)

ns


4

9

5

14

10

15

3

2

8

7

1

13

12

6

11

121

MOS FET Array SMA5113


Absolute Maximum Ratings (Ta=25ºC) Ratings

Unit

VDSS VGSS

Symbol

450 ±30

V V

Symbol

Test Conditions

V(BR) DSS

ID ID (pulse) *1

±7 ±28

A

IGSS

ID = 100µ A, VGS = 0V VGS = ±30V

A

IDSS VTH

35 (Tc=25ºC, All circuits operate, ∞ Fin)

W W

130 7

mJ A

4 (Ta=25ºC, All circuits operate, No Fin)

PT E AS *2 I AS j-a

31.2

Junction - Ambientare, Ta=25ºC, All circuits operate

j-c

3.57

Junction - Case, Ta=25ºC, All circuits operate

Tch Tstg

Re ( yfs) RDS (ON )

ºC/W ºC/W

150

ºC

–55 to +150

ºC

100

VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A

2.0 3.5

4.0

V

1.1

Ω

S

0.84 720 150

ID = 3.5A VDD 200V RL = 57Ω VGS = 10V RG = 50Ω

25 40

ISD = 7A, VGS = 0V

1.0

4.0±0.2 31.0±0.2

2.5±0.2

2 . 0

2 . 0 4 . 1 2

a

) 4 . 0 1 (

1.21±0.15 1.46±0.15

pF

65

30º

b

±

5.0

t d ( on )

tf VSD

V nA µ A

±100

VDS = 450V, VGS = 0V

External Dimensions SMA (LF1000)

Unit

max

450


+0.2

0.85 –0.1

pF pF ns

11•P2.54±0.1=27.94

ns

(Including both-side resin burr)

+0.2

1.2±0.1

0.55 –0.1

31.5max

ns

70 50

1 2 3 4 5 6 7 8 9 10 11 12

ns 1.5


V

(Unit: mm)



7

■ RDS (ON) — ID Characteristics

7

1.5

5.5V

10V

) A ( D I

Ratings typ

min

Ciss Coss Crss t r t d ( off )

*1 PW 100µs, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50Ω

(Ta=25ºC)

6

6

5

5

) A ( D I

4 5V 3

V GS = 10V

V DS = 20V

) 1.0 Ω (

4

) N O ( S D

3

R 0.5 2

2

V GS = 4.5V

1 0

Ta = –55ºC 25ºC 150ºC

1

0

5

10

15

0

20

0

2

4

V DS (V)

6

8

0

10

0

1

2

3

V GS (V)

■ RDS (ON) — TC Characteristics


2.5

V GS = 0V

5

) S (

) A (

) s f y (

R D I

Ta = –55ºC 25ºC 150ºC

e 10 R

D 1.0

R

4 3 2

5

0.5

7

6

50

) N O ( S

6

7 V DS = 20V

V GS = 10V ID = 3.5A

) Ω 1.5 (

5

■ IDR — V SD Characteristics

100

2.0

4

ID (A)

1 2 0.05 0.1

0 –50

0

50

100

150

0.5

Tc (ºC)

1

(Ta = 25ºC)

50 Ciss

0.4

0.6

0.8

1.0


ID (pulse) max

500

1 0 0 µ s

D

10 ID (DC) max I T E L I M ) 5 ( o n

V GS = 0V f = 1MHz

) A ( D I Coss

S R D

1

1 m s 1 0 m s 1 0 0 m s

3

1

6

4

7

8

10

11

0.5 2

Crss 0.1 0.05 0

10

20

30

V DS (V)

122

0.2

V SD (V)


1000

20

0

ID (A)


) F p ( e c n a t i c 100 a p a C 50

0

7

40

50

3

5

10

50

V DS (V)

100

500

5

9

12

MOS FET Array STA508A


Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS

Ratings 120 ±20

Unit V V

Symbol

Test Conditions

V(BR) DSS

±6 ±10

A

IGSS

ID = 100µ A, VGS = 0V VGS = ±20V

4 (Ta = 25ºC) 20 (Tc = 25ºC) 80 150

W W mJ ºC

–55 to +150

ºC

VGSS ID ID (pulse)*

1

PT E AS * Tch

2

Tstg

A

IDSS VTH

2.0

V

0.2

S Ω Ω

±5

VDS = 10V, ID = 4.0A

5.0

RDS (ON )

VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A

0.15 0.2


400 130

pF pF

30

ID = 4A VDD 12V RL = 3Ω VGS = 5V RG = 50Ω

100

pF ns ns ns ns

ISD = 6A, VGS = 0V

1.0


2 . 0

2

0.25

300 250 200 1.5

5 . 3 ±0.25

4

9•2.54=22.86

5

2 . 0

2 . 0

±

± 5 . . 0 . 2 0 1 4

±

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S


V

■ R DS (ON) — I D Characteristics

0.25

6

) N0.15 O ( S D

Ta = –55ºC 25ºC 75ºC 150ºC

4

0

6

V GS = 10V

R0.10 0.05

0

1.0

2.0

3.0

0

4.0

0

2

4

V GS (V)

8

10


50

0.45

6

ID (A)



0.40

5 1 . 0

±0.5

C1.5

) 0.20 Ω (

V DS (V)

ID = 4A

±0.3

0

±0.05

2

3

±0.3

V GS = 4V

4

2

0.5

0

V DS = 10V

) A ( D I

1

(2.54)

±0.15

1.0

8

8

0

a

0.30

V GS = 10V V GS = 4.5V

±

5 . 0

10

12

b

2 . 0

. 0 0 . 3 . ± . 9 1 3 1 2

±

±


16

0

100

V µ A µ A

Re ( yfs )

VSD

±0.2

25.25

120

1.0

Crss t d ( on) t r t d ( off)


Unit

max

VDS = 120V, VGS = 0V

tf

) A ( D I

Ratings typ

min

VDS = 10V, ID = 250µ A

Ciss Coss


(Ta=25ºC)

6 V GS = 0V

V GS = 4V 5 10

) 0.30 Ω (

) S (

) N O ( 0.20 S D

) A (

) s f y (

V GS = 10V

R

e R 1

R

–50

0

50

100

0.1 0.05

150

0.1

0.5

Tc (ºC)

1

5

1 0

10

0

0.2

0.4

ID (A)

(Ta = 25ºC)

20

1000 500

5

) A ( D I

1.2


1 m s 1 0 m s

RDS (on) LIMITED

Coss

1.0

1 0 0 µ s

ID ( DC ) max

V GS = 0V f = 1MHz

0.8

ID ( pulse ) max

10

Ciss

0.6

V SD (V)



) F p ( e c n 100 a t i c a 50 p a C

–55ºC

2

150ºC

0

3

D I

Ta = –55ºC 25ºC 75ºC

0.5

0.10


4

5

3

1 0 0 m s

1

2

0.5

1

5

4

7

6

9

8

10

Crss 10

0.1 0

10

20

30

V DS (V)

40

50

1

5

10

50

100 200

V DS (V)

123

MOS FET Array STA509A



Ratings 52±5 ±20

Unit V V

Symbol

Test Conditions

V(BR) DSS

±3 ±6

A

IGSS

ID = 1mA, VGS = 0V VGS = ±20V

ID ID (pulse) *1

A

PT E AS *2 Tch Tstg

IDSS VTH

W W

4 (Ta = 25ºC) 20 (Tc = 25ºC) 40 150

mJ ºC

–55 to +150

ºC

Re (yfs)

47

52

2.5

V

0.25

S Ω Ω

200 120

t d ( on )

ID = 1A VDD 12V RL = 12Ω VGS = 5V RG1 = 50Ω, RG2 = 10Ω

2.0 7.4

0.3

b

2 . 0

±

a

5 . 0

5 . 3 ±0.25

(2.54)

±0.15

1.0

0.5

±0.3

±0.3

0

0

±0.05

9•2.54=22.86

5 1 . 0

±0.5

µs


µs

1.5

(Unit: mm)

V ■ R DS (ON) — I D Characteristics 0.8 V GS = 4V

V DS = 10V

10

Ta = 150ºC

V GS = 5V V GS = 10V

0.6

) A ( D I

3

) Ω (

1

75ºC

) N 0.4 O ( S D

25ºC

R 0.1

V GS = 3V

Ta = –55ºC 25ºC 75ºC 150ºC

1

0

2

4

6

8

10

12

14

0.01

0

1

2

V DS (V)

3

4

5

0

6

0

1

2

3

4

5

6

ID (A)


0.5

■ I DR — V SD Characteristics 10

10 ID = 1A

V DS = 10V 5

V GS = 4V typ.

0.4

) Ω 0.3 (

8

) S (

) N O ( S D 0.2

R

) A (

) s f y (

V GS = 10V typ.

50

100

0.2 0.05 0.1

150

D I

Ta = –55ºC 25ºC 150ºC

0.5

0

Ta = 150ºC 75ºC

6

R

e 1 R

0.1

0

–55ºC 0.2

V GS (V)


–50

±

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S

µs

3.3 4.2 1.0

2 . 0

2 . 0

± . 5 . 0 . 2 0 1 4

±

C1.5

20

2

0.5

1

25ºC –55ºC

4

2

0

6

0

0.2

0.4

ID (A)

Tc (ºC)

(Tc = 25ºC)

10 ID (pulse) max

n ) ( o

D S

1.0

1.2

1.4


1 0 m s

R

) A ( D I

0.8

1 0 0 µ s 1 m s

E D I T M I L

5

0.6

V SD (V)


3

5

7

9

1 2

0.5

0.1 0.5

1

1

5

V DS (V)

124

2 .

0 0 . 3 . ± . 9 1 3 1 2

±

pF pF µs

20

ISD = 6A, VGS = 0V

V GS = 4V

4

2 . 0

pF

■ I D — V GS Characteristics

6

0

100

V µ A µ A

±



±0.2

25.25

57 ±1.0

1.0 1.0

External Dimensions STA

Unit

max

VDS = 40V, VGS = 0V VDS = 10V, ID = 250µ A VDS = 10V, ID = 1.0A

Ciss Coss Crss

t d ( off ) tf VSD

) A ( D I

Ratings typ

0.2 0.25

t r

5

min

VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A

RDS (ON)


(Ta=25ºC)

10

50

4

6

8

10

Thyristor with built-in reverse diode for HID lamp ignition TFC561D

External Dimensions

Features ● Repetitive

peak off-state voltage: V DRM=600V Repetitive peak surge on-state current: I TRM=430A ● ● Critical rate-of-rise of on-state current: di/dt=1200A/ µs ● Gate trigger current: I GT=20mA max ● With built-in reverse diode

(unit: mm) 4.44±0.2

) 4 . 1 (

10.2±0.3

3 . 0

1.3±0.2

3 . . 5 0 0 + –

±

6 . 8

5 . 0

0 . ± . 0 3 1 1 1

1.2±0.2

2.59±0.2 1.27±0.2

5 . 0

+0.2

Parameter Repetitive peak off-state voltage

Symbol

Ratings

Unit

V DRM

600

V

ITRM

430

Critical rate-of-rise of on-state current

di/dt

1200

Peak forward gate current

IFGM

Peak gate power loss

PGM

V D

430V, 100kcycle,

A

f

50Hz, duty

10%

W

f

50Hz, duty

10%

f

50Hz

W

I FRM

240

A


Tj

–40 to +125

ºC

Storage temperature

Tstg

–40 to +125

ºC

(1). Cathode(K) (2). Anode(A) (3). Gate(G)

(1) (2) (3)

Weight: Approx. 1.5g

5.0

V

*

0.4±0.1

Wp=1.3 µs, Ta=125°C

2.0

5

2.54±0.5

RGK =1k Ω

*

0.5

2.54±0.5

Tj=–40 to +125°C,

A/ µs

PG (AV)

Diode repetitive peak surge forward current

Conditions

A

V RGM

Peak reverse gate voltage

0 . 1 1

0.76±0.1

Repetitive surge peak on-state current

Average gate power loss

±

0.86 –0.1


V D

Measurement circuit

430V, 100kcycle,

L

*

Wp=1.3 µs, Ta=125°C

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

V D

cool down the junction temperature of the device to 125 °C. This process shall be repeated up to 100K cycles.

Sample

C

G1

G2


Symbol

(Tj=25ºC) Ratings min

typ

max

Unit

Conditions

V TM

1.4

V

Gate trigger voltage

V GT

1.5

V

V D=6V, RL=10Ω

Gate trigger current

IGT

20

mA

V D=6V, RL=10Ω

V

V D=480V, Tj=125ºC

Gate non-trigger voltage

V GD

0.1

IT=10A

On-state voltage

mA

RG–K =1k Ω, Tj=25ºC

Off-state current (1)

IDRM (1)

100

µ A

VD= VDRM , R G–K =1kΩ, Tj =25ºC


IDRM (2)

1

mA

VD= VDRM , R G–K =1kΩ, Tj =125ºC

Thermal resistance

Rth

4.0

ºC/W

Diode forward voltage

V F

1.4

V

Holding current

IH

2

10.0

Junction to case IF=10A

Current waveform (1cycle) (Ta=25ºC)

v i d / A 0 0 1

2µs/div

125

Thyristor with built-in reverse diode for HID lamp ignition TFC562D

External Dimensions

Features

(unit: mm) 4.44±0.2

● Repetitive

peak off-state voltage: V DRM=600V ● Repetitive peak surge on-state current: I TRM=600A ● Critical rate-of-rise of on-state current: di/dt=1600A/ µs ● Gate trigger current: I GT=20mA max ● With built-in reverse diode

) 4 . 1 (

(5)

) 5 4 . 0 (

a

1.3±0.2

3 . 5 . 0 0

3 . + – 0 5

. 0 1 . 1 9

b

±

2.6±0.2 (Root dimension)

)

8 .


Symbol

+0.2

0.86–0.1

Ratings

Unit

5 . 0

Conditions

±

0 . 1 1

Tj =–40 to +125°C,

V DRM

600

V

Repetitive surge peak on-state current

ITRM

600

A

Critical rate-of-rise of on-state current

di/dt

1600

A/ µs

Peak forward gate current

IFGM

2

A

f

50Hz, duty 10%

Peak gate power loss

PGM

5

W

f

50Hz, duty 10%

50Hz

Repetitive peak off-state voltage

0.76±0.1

RGK =1k Ω

Ta = 100°C, VD 430V, WP = 1.05 µs, I G = 70mA, dig/dt = 0.5A/ µs, 100kcycle *, See the examples of current waveforms

PG (AV)

0.5

W

V RGM

5

V

f

I FRM

460

A

Ta = 100°C, VD 430V, WP = 1.05µs, 100kcycle *, See the examples of current waveforms


Tj

–40 to +125

ºC

Storage temperature

Tstg

–40 to +125

ºC

Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current

1 ( ) 9 6 . 2 (

+0.2 1.34–0.1

0.4±0.1 2.54±0.1 (Root dimension)

2.54±0.1 (Root dimension) 10.2±0.3

1

2

3

Current waveform (1cycle)

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to

(Ta=100ºC)

cool down the junction temperature of the device to 125°C. This process shall be repeated up to 100K cycles.


min

typ

max

Unit

Conditions

On-state voltage

V TM

1.4

V

Gate trigger voltage

V GT

1.5

V

V D =6V, RL =10 Ω

Gate trigger current

IGT (1)

20

mA

V D =6V, RL =10 Ω

Gate non-trigger voltage

V GD

0.1

V

V D =480V, Tj =125 °C

IH

2

Holding current

126

Symbol

(Tj=25ºC) Ratings

5

mA


IDRM (1)

10


IDRM (2)

IT =10A

RG–K =1k Ω, Tj =25°C

µ A

V D =V DRM, RG–K =1k Ω, Tj =25°C

1

mA

V D =V DRM, RG–K =1k Ω, Tj =125°C Junction to case, With infinite heatsink

Thermal resistance

Rth

4.0

°C/W

Diode forward voltage

V F

1.4

V

v i d / A 0 0 2 : V

IF =10A

H: 2 µs/div * A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100°C (= Ta). Repeat this cycle operation.

Rectifier Diodes for Alternators ■ Normal Type Absolute maximum ratings Part No. SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR

Electrical Characteristics IR V Z Condition (mA) (V) IF (A) max

Tstg (ºC)

V F (V) max

200

–40 to +150

1.10

20

0.25

—

—

30

300

–40 to +150

1.10

30

0.25

—

—

200

35

350

–40 to +150

1.10

35

0.25

—

—

200

30

300

–40 to +150

1.2

100

0.25

—

—

150

35

350

–40 to +150

1.05

100

0.25

—

—

V RM (V)

IF (AV) (A)

IFSM (A)

200

20

200

T j

Condition IZ (mA)

Fig. No. 1

2

SG-9LLCNS SG-9LLCNR SG-10LS SG-10LR SG-10LXS SG-10LXR

3

SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR

200

40

400

–40 to +150

1.05

100

0.25

—

—

150

45

450

–40 to +150

1.0

100

0.25

—

—

■ Zener Type Absolute maximum ratings Part No. SG-9CZS SG-9CZR SG-9LLCZS SG-9LLCZR SG-10LZ23S SG-10LZ23R

Electrical Characteristics IR V Z Condition (mA) (V) IF (A) max

Fig. No.

Tstg (ºC)

V F (V) max

200

–40 to +200

1.10

20

0.05

23±3

10

1

35

350

–40 to +200

1.10

35

0.05

23±3

10

2

30

300

–40 to +150

1.2

100

0.05

23±3

10

V RM (V)

IF (AV) (A)

IFSM (A)

17

20

17 17

T j

Condition IZ (mA)

3

SG-10LLZ23S SG-10LLZ23R SG-14LXZS SG-14LXZR

17

40

400

–40 to +150

1.05

100

0.05

23±3

10

16

35

350

–40 to +200

1.15

100

0.05

22±3

100

External Dimensions

4

(unit: mm)

Fig. 1

Fig. 2 0 . . 0 1 1

0 . . 0 1 1

± ±

0 . . 0 9 3 1 2 : : S R

1.5

±

1.5

3.1±0.1

3.1±0.1

±

0 . . 0 9 3 1 2 : : S R

(R0.5)

1

4 . 0

5

8.4

S type

0 . 4 2

Fig. 4

2

0 . 0 5 . 1 3 1

S type

R type

12.84 11.5 1.26

7 . 0 1

) ) 5 . 4 1 ( (

2.0

5 . . 5 0 8 2 2 : : S R

°

) 2 ( 2.5

) 8 . 5 (

2 . 1

9.5±0.2

R type

5.0

Polarity

5 8.4±0.2

±0.2

Fig. 3

±

2 . 1

7.0±0.2

1

4 . 0

Polarity

±

R1.2 1.4

0.4 1.0

Polarity

Polarity

( 3 0 6 . ) 3

( 4 5 )

°

°

3.0 4.2 5.0

0.6

x x a a m m 0 7 8 0 . 1 . 4 4

4.4

R type

S type 9.0

3 . 0

S type

R type

127

High-voltage Diodes for Igniters

Part No.

V RM (kV)

Absolute Maximum Ratings IF (AV) IRSM IRSM (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100µs half-power average signal bandwidth

SHV-01JN

0.5

30

30

3

SHV-05J

2.5

30

30

3

SHV-06JN

3.0

30

10

3

External Dimensions

Electrical Characteristics (Ta=25ºC) T j

V F (V) max

(ºC)

IR V z ( µ A) (kV) Condition V R =V RM IR =100µ A IF (mA) max

1 –40 to +150

5

10

10

6

Fig. No.

0.55 to 1.0

2

2.6 to 5.0

1

3.2 to 6.0

2

(unit: mm)

Fig. 1 (SHV-05J) 5 . 0

Tstg

Fig. 2 (SHV-06JN) 2.5±0.2

C0.5

2.5±0.2

5 . 0

C0.5 27min

27min 5±0.2

128

27min

6.5

27min

Power Zener Diode

(Ta=25ºC)

Absolute Maximum Ratings Part No.

Electrical Characteristics IR Fig. V R =V DC No. Condition ( µ A) IZ (mA) max

(ºC)

V Z (V) 1mA instantaneous current

2

–40 to +150

25.0 to 31.0

1

10

1

20

2

–55 to +150

25.0 to 31.0

1

10

2

13

—

–55 to +150

16.8 to 19.1

1

10

2

20

—

–55 to +150

25.1 to 28.9

1

10

2

25

—

–55 to +150

31.0 to 35.0

1

10

2

27

—

–55 to +150

34.0 to 38.0

1

10

2

1500 (5ms)

20

65*1

–40 to +150

25.0 to 31.0

10

50

3

5

—

22

70*1

–55 to +175

24 to 30

10

10

4

5

—

22

40*1

–55 to +175

36 to 40

10

10

4

–55 to +175

24 to 30

10

10

4

–55 to +175

36 to 40

10

10

4

P (W)

PR (W)

V DC (V)

I ZSM (A)

SFPZ-68

1

20

SJPZ-K28 *

1

50 (5ms)

SJPZ-E18 *

1

SJPZ-E27 *

1

SJPZ-E33 *

1

SJPZ-E36 *

1

PZ628

5

SZ-10N27 SZ-10N40 *

85 (500 µs)

SZ-10NN27

6

—

22

90*1

SZ-10NN40 *

6

—

22

55*1

Tj

Tstg

Remarks

Surface-mount type

Axial type

* 1: IZSM conditions IRSM IRSM

Surface-mount type

2

0

10ms

Time

* under development

External Dimensions

Fig. 1

(unit: mm)

Fig. 2

4.5 ±0.2

2 . 0

2 . 0

±

6 . 2

±

6 . 2

2 . 0

5 0 . 0

±

5 0 . 2 1.35 ±0.4

2.0min 5.1

Fig. 3

4.5±0.2

1.35 ±0.4

+0.4 –0.1

1.1±0.2

±

5 1 . 2 1.3±0.4

1.5

C2 Cathode marking

5 0 . 0

+0.4

1.3±0.4

1.5±0.2

5.0 –0.1

±0.2

1.3 ±0.05

5 1 . 0 . 0 0 + –

2 . 0

Fig. 3

8.5±0.5 10±0.3

5±0.3 2±0.3

7 . 2 . 0 0 ± 0

± 0 . 0 . 6 0 5 1

3 . 0

) 5 7 . 9 (

3

. 0 0 5 ± . 1 5 . 0 ± 3 5 . 1 5 1 ±

10.0 ±0.2

5 . 0

2.7±0.3 7.2±0.5

±

3±0.5

0 . 2

129

General-purpose Diodes

Rectifier Diodes ■ Surface-mount V RM (V)

Part No.

SFPM-52

200

SFPM-62 SFPM-54

400

SFPM-64

I F (AV) (A)

I FSM (A) Peak value of 50 Hz half-wave signal

Tj (ºC)

Tstg (ºC)

IR ( µ A)

I R (H) (mA)

V F (V) max

Condition I F (A)

V R=V RM max

V R=V RM Condition Ta ( °C) max

Rth (j-l) ( °C/W)

Package

Weight (g)

0.9

30

1.0

1.0

10

50

100

20

1

0.072

1.0

45

0.98

1.0

10

50

100

20

1

0.072

0.9

30

1.0

1.0

10

50

100

20

1

0.072

1.0

45

0.98

1.0

10

50

100

20

1

0.072

–40 to +150

Ultra Fast Recovery Rectifier Diodes ■ Surface-mount V RM (V)

Part No.

I F (AV) (A)

I FSM (A) Peak value of 50 Hz half-wave signal

Tj (ºC)

Tstg (ºC)

IR ( µ A)

I R (H) (mA)

V F (V) max

Condition I F (A)

V R=V RM max

t rr (ns)


Condition I F /I RP (mA)

t rr (ns)

Condition I F /I RP (mA)

Rth (j-l) ( °C/W)

Package

Weight (g)

SFPL-52

0.9

25

0.98

1.0

10

1

150 (Tj)

50

100/100

35

100/200

20

1

0.072

SFPL-62

1.0

25

0.98

2.0

10

1

150 (Tj)

50

100/100

35

100/200

20

1

0.072

10.0

65

0.98

5.0

100

0.2

150

40

100/100

30

100/200

2.5

2

1.4

20.0

110

0.98

10.0

200

0.4

150

50

100/100

35

100/200

2.5

2

1.4

1.0

25

1.3

1.0

10

0.05

150

50

100/100

30

100/200

20

1

0.072

IR ( µ A)

I R (H) (mA)

200

MPL-102S MP2-202S

400

SFPL-64

–40 to +150

Schottky Barrier Diodes ■ Surface-mount Part No.

V RM (V)

I F (AV) (A)

SFPJ-53 *

30

1.0

SFPJ-63

30

2.0

SFPJ-73

30

SFPB-54

40

SFPB-64 SFPE-64 SFPB-74

I FSM (A)

V F (V) max

Condition I F (A)

V R=V RM max

Rth (j-l) ( °C/W)

Package

Weight (g)

30

0.45

1.0

1.0

35

40

0.45

2.0

2.0

70

150

20

1

0.072

150

20

1

0.072

3.0

50

0.45

3.0

3.0

1.0

30

0.55

1.0

1

100

150

20

1

0.072

35

150

20

1

0.072

40

2.0

60

0.55

2.0

5

70

150

20

1

0.072

40

2.0

40

0.6

2.0

40

3.0

60

0.5

2.0

0.2

70

150

20

1

0.072

5

100

150

20

1

0.072

SFPB-56

60

0.7

10

0.62

SFPW-56

60

1.5

25

0.7

0.7

1

30

150

20

1

0.072

1.5

1

70

150

20

1

0.072

SFPB-66

60

2.0

25

SFPB-76

60

2.0

40

0.69

2.0

1

55

150

20

1

0.072

0.62

2.0

2

70

150

20

1

0.072

SFPB-59

90

0.7

SFPB-69

10

0.81

0.7

1

30

150

20

1

0.072

90

1.5

40

0.81

1.5

2

55

150

20

1

0.072

Peak value of 50 Hz half-wave signal

Tj (ºC)

Tstg (ºC)

–40 to +150


* under development

External Dimensions

(unit: mm)

1: (Surface-mount SFP) 4.5

2: (TO-220S)

±0.2

2.3±0.4

6.5 ±0.4 5.4 ±0.4

5 . 0

0.55 ±0.1

±

6 1 . 0 7 3 . 1

2.9

7 . 1

2 . 0

5.4 4.1

±

6 . 2

±

5 . 5

5 0 . 0

2 . 0 ±

5 0 . 2 ±0.4

2.0min +0.4

5.1–0.1

1.35

±0.4

1.1

±0.2

1.5

±0.2

b

x a m 2 . 1

c 4 . 0

4.9

5 . 2 1.15

±0.1

2.29 ±0.5 2.29 ±0.5

0.8 ±0.1

a) Part No. b) Polarity c) Lot No.

2 . 0 ±

5 . 0 0.55 ±0.1

(Common with heatsink)

1.5max N.C

130

0 . 5

0 to 0.25

±

0.8 ±0.1

1.35

7 . 0

a

4 . 0

Cathode

Anode

General-purpose Diodes - Taping Specifications

Taping Specifications Taping Name

Packaging Dimensions (mm) and Markings

Taping Dimensions (mm) Emboss taping

Packaging Quantity

Reel

1 . 0 ±

5 7 . 1

4.5 ±0.2

4.0

+0.1 –0

±0.1

Marking of Part No., Lot No., quantity, etc.

1.5

2 . 0 ±

6 . 2

V

5 1 . 0 . 0 0

+ –

2 . 0

5 0 . 0

±

5 0 . 2

1.35

±0.4

2.0min

1.35

±0.4

3 . 0

5 0 . 0

2.0 ±0.5

±

5 . 0 . 5 2 1

±

13 ±0.5

5 . 5

1,800 pcs.

5 6

per reel

1.1±0.2

+0.4 5.1– 0.1

1.5

±0.2

±0.8

0.1

Pull out direction

4.0 ±

2.0

21

R1.0

6 . 2

A suffix "V" is added to Part No. for tape packaging.

3.1

(1) The right side of the tape is the cathode viewing in the unfold direction. (2) The product is inserted into the case with the installed electrode on the lower side. (3) A leader tape 150 to 200mm long is provided on the unfolding edge. (4) A space of at least 10 pitches equivalent is provided on either end of the tape. (5) Taping with reversed diode polarity is available on request (taping name VL).

±1.5

178 ±2

2.0 ±0.5

14

Power Surface-mount - Taping Specifications Taping Name


Taping Dimensions (mm)

Part No.

Pull out direction

Materials Disc: both-face white corrugated cardboard Core: foamed styrol

Quantity

VL

Taping name (type)

Packaging Quantity

Lot No.

3,000 pcs. 1 3 8

35°

A suffix "VL" is added to Part No. for tape packaging.

+0.1 1.5 0

per reel

1 . 0

2±0.1 4±0.1

1 3 8

±

±0.1 (Seal part) 5 7 . 4.9

12±0.1

1

1 0

1 . 0 ) e

1 1 . p . a 0 0 t ±

±

±

5 . 1 3 . 1 0 ± 4 2

) s n o i s n e

m r i 5 . e 4 . d 1 v o 4 m o t 2 C ( 1 t o

1 0

0 0 0 8 6 4

B

2 2

0 2

2

1 2 .

± ± 0 0 0 ± 3 0 3 3 1 1

120°

B (

Pull out direction

VR

10.8±0.1

(Seal part)

(Bottom dimensions)

25.5±1 29.5±1

0.4±0.1 2 . 5

± 0 . 1

R 1 3 5

5.4max

3,000 pcs.

9±0.5

5 . 0

±

7

per reel

2±0.5 0.8

21 ±

A suffix "VR" is added to Part No. for tape packaging.

5

±

0 . 5

1 3 ±

0 . 2

13±0.5

High-voltage diodes for ignition - Taping Specifications Taping Name



Packaging Quantity

Axial taping 5 . 0

±

5 x a m 2 . 1

V1 A suffix "V1" is added to Part No. for tape packaging.

Part No.

Lot No. Quantity

29 ±1.5 75 ±1.5

1

1.0max 6 ±1.0

58 ±1

6 ±1.0

5,000 pcs. per reel

±

5 2 340±2

131

General-purpose Diodes - Taping Specifications

Power Zener Surface-mount - Taping Specifications Taping Name



Packaging Quantity

Pull out direction

VL

750 pcs. 1 3 B

35°

A suffix "VL" is added to Part No. for tape packaging.

1.50±0.1

4.00±0.1 2.00±0.1

1 3 B

per reel

1 . 0

±

5 7 . 1

5.64±0.1 1 0 °

4

1 . 0

±

0 5 . 1 1

3 . 1 . 0 0 + –

0 0 . 4 2

1 0

1 . 0

±

0 0 . 6 1

0 0 0 8 6 4

B

2 2

0 2

2

±

120°

25.5 ±1 29.5±1

°

4

Pull out direction

VR

R TYPE

L TYPE

1.50±0.25

16.00±0.1

1 2 . ±

0 0 0 ± 3 0 3 3 1 1

R 1 3 5

0.40±0.05

10.80±0.1 8 °

8 °

750 pcs.

9±0.5

5 . 0

±

7

per reel

2±0.5 0.8

A suffix "VR" is added to Part No. for tape packaging.

132

21 ±

5

±

0 . 5

1 3 ±

0 . 2

13±0.5

The label showing the product name, quantity and production lot is attached to the reel.

3

LEDs 3-1. Uni-Color LED Lamps .............. 134 3-2. Bi-Color LED Lamps .................. 137 3-3. Surface Mount LEDs .................. 138 3-4. Infrared LEDs ..................................... 140 3-5. Ultraviolet LEDs ............................... 141 3-6. Multi-chip Modules ..................... 142

133

General-purpose LEDs

Uni-Color LED Lamps Absolute Maximum Ratings Parameter

Unit

PD

mW

IF

mA

∆I F

mA/ºC

I FP

mA

V R

V

Top

ºC

Tstg

ºC

Outline

Emitting color

Deep red

High-intensity red Red Amber Orange Yellow Green Pure green Red Amber

5 Round

Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity orange Ultra high-intensity pure green Ultra high-intensity blue Ultra high-intensity blue Ultra high-intensity red

Red Amber Orange Green Pure green Ultra high-intensity pure green Ultra high-intensity blue High-intensity red

4.6✕5.6 Egg-shaped

Ultra high-intensity red

Green Deep red Red

4 Round

Amber Orange Yellow

134

GaP

(Ta=25ºC) Ratings GaA As

GaAsP

A GaInP

InGaN

75

Conditions

GaN 120

30 –0.45

Above 25ºC

100

70

3

f=1kHz, tw=100µs

5 –30 to +85

–30 to +80

–30 to +100

Part No.

SEL1110R SEL1110W SEL1110S SEL1610W SEL1610C SEL1210R SEL1210S SEL1810D SEL1810A SEL1910D SEL1910A SEL1710Y SEL1710K SEL1410G SEL1410E SEL1510C SEL1210RM SEL1210SM SEL1810DM SEL1810AM SEL1910DM SEL1910AM SEL1710KM SEL1410GM SEL1410EM SEL1510CM SELU1210CXM SELU1910CXM-S SELU1D10CXM SELU1E10CXM SELS1E10CXM-M SELU1250CM SEL1250SM SEL1250RM SEL1850AM SEL1850DM SEL1950KM SEL1450EKM SEL1450GM-YG SEL1550CM SELU1D50CM SELU1E50CM SEL1615C SELU1253CMKT SEL1453CEMKT SEL4110S SEL4110R SEL4210S SEL4210R SEL4810A SEL4810D SEL4910A SEL4910D SEL4710K SEL4710Y

V F (V)

Lens color typ

max

2.0

2.5

Diffused red Diffused white Tinted red Diffused white Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Diffused yellow Tinted yellow Diffused green Tinted green Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Tinted yellow Diffused green

1.75

2.2

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

Clear Clear Clear Clear Clear Clear Tinted red Diffused red Tinted orange Diffused orange Tinted orange Tinted green Diffused green Clear Clear Clear Clear Clear Tinted green Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow

2.8 2.8 4.5 250 300 26 75 18 37 14 25 22 65 32 84 50 36 75 18 37 19 34 65 30

Chip material

5

700

625

GaP

20

660

642

GaA As

20

630

620

GaAsP

10

610

605

GaAsP

10

587

590

GaAsP

10

570

571

GaP

20

560

567

GaP

20

555

559

GaP

20

630

620

GaAsP

10

610

605

GaAsP

10

587

590

GaAsP

10

570

571

GaP

20

560

567

GaP

20 20

555 635

559 625

GaP A GaInP

2.0

2.5

2.0 2.0

2.5 2.5

84 50 280

2.0 3.3

2.5 4.0

450 2000

20 20

591 525

589 530

A GaInP InGaN

3.3 3.7 2.0

4.0 4.2 2.5

600 1000 900

20 20 20

468 468 635

470 470 625

InGaN InGaN A GaInP

1.9

2.5

20

630

620

GaAsP

1.9

2.5

20

610

605

GaAsP

1.9

2.5

20

587

590

GaAsP

2.0

2.5

96 190 120

20

560

567

GaP

2.0 3.3

2.5 4.0

72 6000

20 20

555 525

559 530

GaP InGaN

3.3 1.75

4.0 2.2

1850 170

20 20

468 660

470 642

2.0 2.0

2.5 2.5

20 20

635 560

625 567

2.0

2.5

5

700

625

GaP

1.9

2.5

200 140 2.4 1.7 30

InGaN GaA As A GaInP GaP

20

630

620

GaAsP

1.9

2.5

10

610

605

GaAsP

1.9

2.5

10

587

590

GaAsP

2.0

2.5

10

570

571

GaP

Tinted green Clear

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength I V λ p (nm) λ p (nm) (mcd) Condition IF (mA) typ typ typ

75 48 90 60

17 20 15 26 16 36 14

t t c n a t u n o o m C

. o N . g i F

1

2

3

4

5 6

7


Uni-Color LED Lamps

Outline

Emitting color

Green Ultra high-intensity green

Pure green Deep red Red 4 Round

Amber Orange Yellow Green Pure green Deep red Red Amber Ultra high-intensity orange

Orange Yellow Green Pure green Blue Ultra high-intensity deep red

Ultra high-intensity red

Red Amber Ultra high-intensity light amber Ultra high-intensity orange

Orange 3 Round

Ultra high-intensity yellow

Yellow Green Ultra high-intensity green

Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue

Red Orange Yellow Green Pure green Deep red High-intensity red Ultra high-intensity deep red

Red

Amber Ultra high-intensity light amber

Part No.

SEL4410E SEL4410G SELU4410CKT-S SEL4510C SEL4114S SEL4114R SEL4214S SEL4214R SEL4814A SEL4814D SEL4914A SEL4914D SEL4714K SEL4714Y SEL4414E SEL4414G SEL4514C SEL6110S SEL6110R SEL6210S SEL6210R SEL6810A SEL6810D SELU6910C-S SEL6910A SEL6910D SEL6710K SEL6710Y SEL6410E SEL6410G SEL6510C SEL6510G SEL6E10C SELU6614C-S SELU6614W-S SELU6214C SEL6214S SEL6814A SELS6B14C SELU6914C-S SEL6914A SEL6914W SELU6714C SEL6714K SEL6714W SEL6414E SELU6414G-S SEL6414E-TG SEL6514C SELS6D14C SELS6E14C-M SEL6215S SEL6915A SEL6715C SEL6415E SEL6515C SEL2110S SEL2110R SEL2110W SEL2610C SELU2610C-S SEL2210S SEL2210R SEL2210W SEL2810A SEL2810D SELU2B10A-S

Lens color

Tinted green Diffused green Clear Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Clear Tinted orange

V F (V) typ

max

2.0

2.5

2.1 2.0

2.5 2.5

2.0

2.5

1.9

2.5

1.9

2.5

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

2.0

2.5

1.9

2.5

1.9

2.5

2.0

2.5

Electro-optical characteristics (Ta=25ºC) I V Peak wavelength Dominantwavelength (mcd) Condition λ p (nm) λ p (nm) typ typ typ IF (mA) 87 34 170 45 3.8 2.8 40 24 20 15 26 11 38 27 69 48 26 3.9 2.6 41 18 22 9.6 550 22 11 37 11 90

Chip material

20

560

567

GaP

20 20

560 555

562 559

A GaInP GaP

10

700

625

GaP

20

630

620

GaAsP

10

610

605

GaAsP

10

587

590

GaAsP

10

570

571

GaP

20

560

567

GaP

20

555

559

GaP

10

700

625

GaP

20

630

620

GaAsP

10

610

605

GaAsP

20

591

589

A GaInP

10

587

590

GaAsP

10

570

571

GaP

20

560

567

GaP

20

555

559

GaP

20

430

466

GaN

20

650

639

A GaInP

20 20

635 630

625 620

A GaInP GaAsP

1.9

2.5

2.0

2.5

2.0

2.5

2.0

2.5

4.0

4.8

2.0

2.5

Tinted red

2.0 1.9

2.5 2.5

Tinted orange

1.9

2.5

9.0

10

610

605

GaAsP

Clear

2. 2.0

2.5 2.5

20 20

600 591

596 589

A GaInP A GaInP

1.9

2.5

120 180 8.0

10

587

590

GaAsP

2.1

2.5

20

572

571

A GaInP

2.0

2.5

20

570

571

GaP

Tinted green

2.0

2.5

30 42

20

560

567

GaP

Diffused green

2.1 2.0

2.5 2.5

30 18

20 20

560 558

562 564

A GaInP GaP

2.0 3.3

2.5 4.0

12 300

20 20

555 518

559 525

GaP InGaN

Tinted orange

3.7 1.9 1.9

4.2 2.5 2.5

70 45 60

20 20 20

468 630 587

470 620 590

InGaN GaAsP GaAsP

Clear

2.0

2.5

90

20

570

571

GaP

Tinted green

2.0 2.0

2.5 2.5

81 44 4

20 20

560 555

567 559

GaP GaP

2.0

2.5

10

700

625

GaP

1.75 2.0

2.2 2.5

1.8 1.8 60

20

300 40

20

660 650

642 639

A GaInP

1.9

2.5

15 15

20

630

620

GaAsP

1.9

2.5

22 9.0

10

610

605

GaAsP

2.0

2.5

300

20

598

595

A GaInP

Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Diffused white Clear

Clear Tinted orange Diffused white Clear Tinted yellow Diffused white

Tinted green Clear Clear Clear Tinted red

Clear Tinted red Diffused red Diffused white Clear Clear Tinted red Diffused red Diffused white Tinted orange Diffused orange Tinted orange

30 42 9.6 60 150 90 180 18

5.0 60 66


. o N . g i F

7

8

9

10

11

GaA As 12

135


Uni-Color LED Lamps

Outline

Emitting color

Orange Ultra high-intensity yellow Yellow

Green

Pure green Ultra high-intensity pure green Ultra high-intensity blue

3 Round

Blue Ultra high-intensity red Red

Amber

Orange

Yellow

Green Pure green Red Amber Orange Yellow Green Pure green Ultra high-intensity red

Ultra high-intensity light amber

Inverted-cone typ for surface illumination

Green Deep green Pure green High-intensity red Red Amber Orange Yellow Green Pure green High-intensity red Ultra high-intensity deep red Ultra high-intensity red Red Ultra high-intensity amber

5mm Pitch lead Amber rectangular Ultra high-intensity light amber Orange Ultra high-intensity yellow Green Pure green Blue Ultra high-intensity red Red Amber

Ultra high-intensity light amber Ultra high-intensity orange

5mm Pitch lead bow-shaped

Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity blue Blue

136

Part No.

SEL2910A SEL2910D SELU2710C SEL2710K SEL2710Y SEL2410E SEL2410G SEL2510C SEL2510G SELU2D10C SELU2E10C SEL2E10C SELU2215R-S SEL2215S SEL2215R SEL2815A SEL2815D SEL2915A SEL2915D SEL2715K SEL2715Y SEL2415E SEL2415G SEL2515C SEL1213C SEL1813A SEL1913K SEL1713K SEL1413E SEL1513E SELU6213C-S SELS6B13W SEL6413E SEL6413E-TG SEL6513C SEL2613CS-S SEL2213C SEL2813A SEL2913K SEL2713K SEL2413E SEL2413G SEL2513E SEL5620C SELU5620S-S SELU5220C-S SEL5220S SELU5820C-S SEL5820A SELU5B20C SEL5920A SELU5720C SEL5420E SEL5520C SEL5E20C SELS5223C SEL5223S SEL5823A SELS5B23C SELS5923C SEL5923A SELU5723C SEL5723C SEL5423E SEL5523C SELU5E23C SEL5E23C

Lens color Tinted orange Diffused orange Clear Tinted yellow

V F (V)

Electro-optical characteristics (Ta=25ºC) I V Peak wavelength Dominantwavelength (mcd) Condition λ p (nm) λ p (nm) typ typ typ IF (mA)

Chip material

typ

max

1.9

2.5

16 8.0

10

587

590

GaAsP

2.1

2.5

270

20

572

571

A GaInP

10

570

571

GaP

20

560

567

GaP

20

555

559

GaP

40 14 77 20 43

2.0

2.5

2.0

2.5

2.0

2.5 4.0 4.0 4.8

1200 400 60

20 20 20

525 468 430

530 470 466

InGaN

Clear

3.3 3.3 4.0

Diffused red

2.0

2.5

20

632

624

A GaInP

1.9

2.5

380 45 38

20

630

620

GaAsP

1.9

2.5

80 60

10

610

605

GaAsP

1.9

2.5

81 53

10

587

590

GaAsP

2.0

2.5

10

570

571

GaP

2.0

2.5

20

560

567

GaP

Clear

2.0

2.5

130 110 110 72 52

20

555

559

GaP

Tinted red

1.9 1.9

2.5 2.5 2.5

7.0 8.0 8.0

20 20 20

630 610 587

620 605 590

GaAsP GaAsP GaAsP

2.5

15

20

570

571

GaP

2.0 2.0 2.0 2.0 2.0

2.5 2.5 2.5 2.5 2.5

12 5.0 30

20 20 20

560 555 632

567 559 624

GaP GaP A GaInP

60 14

20 20

600 560

596 567

A GaInP GaP

2.0 2.0 1.75

2.5 2.5 2.2

6 5.0 20

20 20 20

558 555 660

564 559 642

GaP GaP GaA As

1.9 1.9

2.5 2.5 2.5 2.5

20 20 20 20

630 610

1.9 2.0

587 570

620 605 590 571

GaAsP GaAsP GaAsP GaP

2.0

2.5

7.0 8.0 8.0 17 14

20

560

567

GaP

2.0 1.75 2.0

2.5 2.2 2.5

20

555 660 650

559

GaP

642 639

GaA As A GaInP

2.0 1.9 2.0 1.9 2.0

2.5 2.5 2.5 2.5 2.5

632 630 611 610 600

624 620 605 605 596

A GaInP GaAsP

1.9 2.1

2.5 2.5

587 572

590 571

2.0 2.0

2.5 2.5

4.0 2.0 1.9

Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear

Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green

Tinted orange

Tinted light orange Tinted yellow Tinted green

Tinted light green Clear Diffused white Tinted green Tinted green Clear Tinted light red Tinted red Tinted orange Tinted orange Tinted yellow Tinted green Diffused green Tinted green

1.9 2.0

8.2

12 5.0

20 20

120 20

20 20

150 12 120 12 50

20 20 20 20 20 20 20 20 20 20

560 555

567 559

4.8 2.5 2.5

20 6.0 10 100 25

430 635 630

466 625 620

GaP GaP GaN A GaInP GaAsP

Clear

1.9 2.0 2.0

2.5 2.5 2.5

35 135 145

20 20 20

610 600 591

605 596 589

GaAsP A GaInP A GaInP

Tinted orange

1.9

2.5

35

20

587

590

GaAsP

Clear

2.1 2.0 2.0

2.5 2.5 2.5

155 60 40

20 20 20

572 570 560

571 571 567

A GaInP GaP GaP

Clear

2.0 3.3

2.5 4.0

13 180

20 20

555 468

559 470

Clear

4.0

4.8

20

20

430

466

GaP InGaN GaN

Tinted red Clear Tinted red Clear Tinted orange Clear Tinted orange Clear Tinted green Clear Clear Clear Tinted red Tinted orange Clear

Clear Tinted green Clear

. o N . g i F

12

InGaN GaN

100 100

Clear


A GaInP GaAsP A GaInP GaAsP A GaInP

13

14

15

16

17

18


Bi-Color LED Lamps Absolute Maximum Ratings

(Ta=25ºC) Ratings GaA As

Parameter

Unit

PD

mW

IF

mA

30

∆I F

mA/ºC

–0.45

I FP

mA

100

V R

V

Top

ºC

–30 to +85

Tstg

ºC

–30 to +100

Outline

Part No.

SML11516C SML1516W SML1216C SML1216W SML1816W 5 Round

SML19416W SMLU12E16C SMLU12E16W SMLU12D16W SMLU18D16C SMLU18D16W-S SML72420C

3.3✕6 SML78420C Rectangular

SML79420C SML72423C SML72923C SML78423C 3.3✕6 SML79423C Bow-shaped

SMLS79723C SMLU72423C-S SMLU79423C-S

GaP

GaAsP

A GaInP

75

120

f=1kHz, tw=100µs 5

Emitting color Lens color

Deep red Clear Pure green Deep red Diffused white Pure green Red Clear

Red Diffused white Green Amber Green

Diffused white

Orange Diffused white Green

Ultra high-intensity red Ultra high-intensity blue

Clear

Ultra high-intensity red Ultra high-intensity blue

Diffused white

Ultra high-intensity red Diffused white Ultra high-intensity pure green Ultra high-intensity amber Ultra high-intensity pure green

Clear

Ultra high-intensity amber Diffused white Ultra high-intensity pure green Red Clear Green Amber Green

Clear

Orange Clear Green Red Green

Clear

Red Clear Orange Amber Clear Green Orange Green

Clear

Ultra high-intensity orange Clear Yellow

Ultra high-intensity red Ultra high-intensity green

Clear

Ultra high-intensity orange Clear Ultra high-intensity green

Also applies to simultaneous lighting

Above 25ºC

3

Green

Conditions

InGaN

V F (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength I V λ p (nm) λ p (nm) (mcd) Condition typ IF (mA) typ typ

Chip material

typ

max

2.0

2.5

15

20

700

625

GaP

2.0

2.5

50

20

555

559

GaP

2.0

2.5

6.0

20

700

625

GaP

2.0

2.5

20

20

555

559

GaP

1.9

2.5

65

20

630

620

GaAsP

2.0

2.5

90

20

560

567

GaP

1.9

2.5

60

20

630

620

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

50

20

610

605

GaAsP

2.0

2.5

60

20

560

567

GaP

1.9

2.5

45

20

587

590

GaAsP

2.0

2.5

60

20

560

567

GaP

2.0

2.5

500

20

632

624

A GaInP

3.3

4.0

400

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

150

20

468

470

InGaN

2.0

2.5

250

20

632

624

A GaInP

3.3

4.0

700

20

525

530

InGaN

2.0

2.5

800

20

611

605

A GaInP

3.3

4.0

2000

20

525

530

InGaN

2.0

2.5

300

20

611

605

A GaInP

3.3

4.0

500

20

525

530

InGaN

1.9

2.5

15

20

630

620

AGaAsP

2.0

2.5

20

20

560

567

GaP

1.9

2.5

10

20

610

605

GaAsP

2.0

2.5

20

20

560

567

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

20

20

560

567

GaP

1.9

2.5

25

20

630

620

GaAsP

2.0

2.5

35

20

560

567

GaP

1.9

2.5

25

20

630

620

GaAsP

1.9

2.5

25

20

587

590

GaAsP

1.9

2.5

25

20

610

605

GaAsP

2.0

2.5

35

20

560

567

GaP

1.9

2.5

25

20

587

590

GaAsP

2.0

2.5

35

20

560

657

GaP

2.0

2.5

150

20

590

590

A GaInP

2.0

2.5

40

20

570

571

GaP

2.0

2.5

120

20

635

625

A GaInP

2.2

2.5

30

20

560

567

A GaInP

2.0

2.5

150

20

590

590

A GaInP

2.2

2.5

30

20

560

567

A GaInP

Common


. o N . g i F

Cathode Cathode Cathode Cathode Cathode Cathode

19

Cathode Cathode Cathode Cathode Cathode Cathode Cathode

20

Cathode Cathode Cathode Cathode Cathode

21

Cathode Cathode Cathode

137


Surface Mount LEDs Absolute Maximum Ratings Parameter

Unit

GaP

(Ta=25ºC) Ratings GaA As A GaInP

GaAsP

IF

mA

30

∆I F

mA/ºC

–0.45

I FP

mA

70

V R

V

4

Top

ºC

–30 to +85

Tstg

ºC

InGaN

Conditions

GaN

Above 25ºC f=1kHz, tw=100µs 5 –25 to +85

–30 to +100

Uni-Color Surface Mount LEDs Outline

Emitting color Red Amber Orange

Side view (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity blue Red Amber

Side view (inner lens type)

Orange Yellow Green Deep green Pure green Deep red High-intensity red Red Amber Orange

3✕1.5 (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity pure green

Ultra high-intensity blue Blue High-intensity red Ultra high-intensity red Red

Ultra high-intensity amber 3✕1.5 (inner lens type)

Amber

Ultra high-intensity orange Orange Yellow Green Deep green Pure green

138

Part No.

SEC4201C SEC4801C SEC4901C SEC4701C SEC4401C SEC4401E-TG SEC4501C SECU4E01C SEC4203C SEC4803C SEC4903C SEC4703C SEC4403C SEC4403E-TG SEC4503C SEC1101C SEC1601C SEC1201C SEC1801C SEC1901C SEC1701C-YG SEC1401C SEC1401E-TG SEC1501C SECU1D01C SECU1E01C SEC1E01C SEC1603C SECS1203C SEC1203C SECS1803C SEC1803C SECS1903C SEC1903C SEC1703C SEC1403C SEC1403E-TG SEC1503C

Lens color

V F (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominantwavelength I V λ p (nm) (mcd) λ p (nm) Condition IF (mA) typ typ typ

Chip material

typ

max

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

50

20

468

470

InGaN

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green

2.0

2.5

15

20

558

564

GaP

Clear

2.0

2.5

10

20

555

559

GaP

Clear

2.0

2.5

1.5

20

700

625

GaP

Clear

1.7

2.2

25

20

660

642

GaA As

Clear

1.9

2.5

10

20

630

620

GaAsP

Clear

1.9

2.5

16

20

610

605

GaAsP

Clear

1.9

2.5

13

20

587

590

GaAsP

Clear

2.0

2.5

25

20

570

571

GaP

Clear

2.0

2.5

22

20

560

567

GaP

Tinted green

2.0

2.5

11

20

558

564

GaP

Clear

2.0

2.5

8.0

20

555

559

GaP

Clear

3.3

4.0

150

20

525

525

InGaN

Clear

3.3

4.0

50

20

470

468

InGaN

Clear

3.9

4.8

6.0

20

430

466

GaN

Clear

1.7

2.2

35

20

660

642

GaA As

Clear

1.9

2.5

100

20

635

625

A GaInP

Clear

1.9

2.5

15

20

630

620

GaAsP

Clear

1.9

2.5

10

3

615

607

A GaInP

Clear

1.9

2.5

20

20

610

605

GaAsP

Clear

1.9

2.5

70

20

590

590

A GaInP

Clear

1.9

2.5

15

20

587

590

GaAsP

Clear

2.0

2.5

35

20

570

571

GaP

Clear

2.0

2.5

33

20

560

567

GaP

Tinted green

2.0

2.5

15

20

558

564

GaP

Clear

2.0

2.5

10

20

555

559

GaP

. o N . g i F

22

23

24

25


Surface Mount LEDs

Uni-color / Bi-color Surface Mount LEDs with two elements Outline

Part No.

SEC2422C SEC2442C SEC2462C 3✕2.5 (flat lens type)

SEC2492C SEC2552C SEC2592C SEC2762C-YG SEC2484C SEC2554C

3✕2.5 (inner lens type)

SEC2494C SEC2764C SEC2774C

Emitting color Red Green Green Green High-intensity red Green Orange Green Pure green Pure green Orange Pure green High-intensity red Yellow Amber Green Pure green Pure green Orange Green High-intensity red Yellow Yellow Yellow

Lens color

Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear

V F (V)

Electro-optical characteristics (Ta=25ºC) Peak wavelength Dominant wavelength I V λ p (nm) λ p (nm) (mcd) Condition typ IF (mA) typ typ

Chip material

typ

max

1.9

2.5

10

20

630

620

GaAsP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

20

20

560

567

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

560

567

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

20

20

560

567

GaP

2.0

2.5

5.0

20

555

559

GaP

2.0

2.5

5.0

20

555

559

GaP

1.9

2.5

10

20

587

590

GaAsP

2.0

2.5

5.0

20

555

559

GaP

1.7

2.2

20

20

660

642

GaA As

2.0

2.5

20

20

570

571

GaP

1.9

2.5

20

20

610

605

GaAsP

2.0

2.5

30

20

560

567

GaP

2.0

2.5

10

20

555

559

GaP

2.0

2.5

10

20

555

559

GaP

1.9

2.5

20

20

587

590

GaAsP

2.0

2.5

30

20

560

567

GaP

1.7

2.2

50

20

660

642

GaA As

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

2.0

2.5

50

20

570

571

GaP

. o N . g i F

26

27

139


Infrared LEDs Absolute Maximum Ratings

(Ta=25ºC)

Parameter

Unit

Ratings

IF

mA

150

∆I F

mA/ºC

–1.33

I FP

mA

1000

V R

V

5

Top

ºC

–30 to +85

ºC

–30 to +100

Tstg

Conditions Above 25ºC f=1kHz, tw=10µs

Infrared LEDs Outline

5 Round

3 Round 3 ✕ 1.5 (inner lens type) chip

140

Part No.

SID1010CM SID1K10CM SID1010CXM SID1K10CXM SID1050CM SID303C SID313BP SID1003BQ SID307BR SID1G307C SID1G313C SID2010C SID2K10C SEC1G03C

Lens color

Electro-optical characteristics (Ta=25ºC) Radiant intensity Ie Peak wavelength V F (V) λ p (nm) (mW/sr) Condition typ max typ typ

Chip material

Clear

1.3

1.5

130

940

GaAs

Clear

1.3

1.5

200

940

GaAs

Clear

1.3

1.5

80

940

GaAs

Clear

1.3

1.5

110

940

GaAs

Clear

1.3

1.5

250

940

GaAs

(Constant voltage) Vcc=3V, R=2.2Ω

Clear

1.3

1.5

80

940

GaAs

Transparent light purple Transparent light navy blue Transparent dark navy blue

1.3

1.5

130

940

GaAs

1.3

1.5

180

940

GaAs

1.3

1.5

200

940

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.5

1.8

50

850

GaAs

Clear

1.3

1.5

7

940

GaAs

940

GaAs

850

GaA As

Clear

1.3

1.5

14

Clear

1.5

1.8

3

IF=50mA

t c t a t n n u o o C m

. o N . g i F

28

29

30

31 25


Ultraviolet LEDs Absolute Maximum Maximum Ratings Ratings

(Ta=25ºC)

Parameter

Unit

Ratings

IF

mA

30

Conditions

∆I F

mA/ºC

–0.45

I FP

mA

100

f=1kHz, tw=10µs

IR

mA

100

Max. rating of built-in Zener diode

Top

ºC

–30 to +85

Tstg

ºC

–30 to +100

Above 25ºC

Ultraviolet Surface Mount LEDs Chip material

. o N . g i F

InGaN

32

Electro-optical characteristics (Ta=25ºC) Outline

2.8 ✕ 3.5

Part No.

SECU1V0AC

t yp

max

I V V mcd ) ( mcd t yp

3.7

4.0

2.2

Lens color

Clear

V F (V)

Peak wavelength

Condition ) IF( mA mA

λ p (nm) t yp

20

385

Electrostatic withstand voltage

(V) t yp 4000

Condition 100pF, 1.5kΩ

141


Multi-chip LED Module (under development) Absolute Maximum Maximum Ratings Parameter

142

(Per element Ta=25ºC)

Unit

Ratings

Conditions With an infinite heatsink mounted

IF

mA

40

∆I F

mA/ºC

–0.25

I FP

mA

100

V R

V

5

Topr

ºC

–30 to +85

Tstg

ºC

–30 to +100

f=1kHz, tw=10µs

Part No.

Colors compliant with JIS-Z9112

Color temperature [°K ] 20mA

Total flux [lm] 20mA

Chromaticity x, y 20mA

SEP8WD4001

Cool white

6400

30

0.32, 0.33

SEP8WN4001

Natural white

5000

30

0.34, 0.35

SEP8WE4001

White

4200

30

0.37, 0.37

SEP8WW4001

Warm white

3450

25

0.41, 0.38

SEP8WL4001

Light bulb

2875

25

0.44, 0.41

Fig. No.

33

General-purpose LEDs - External Dimensions

(Unit: mm)

Fig.30

Fig.32 2.0min

24.0min A

Anode

5.6

8.5

±0.5

Surface

Side view 3.5 3.2 (2.7)

(0.8)

) 4 5 . 2 (

1.4 0.2

2 . 0

±

8 . 4

1 x 1 . . 0 a 0 + Cathode ± m 6 5 . . 8 0 1 . 1 0

0.6±0.1

) 8 . 4 . 2 ( 2

Resin burr 0.3max Resin heap 1.5max

Cathode Mark 1 . 0

Side view

±

6 . 0

Dimension A (mm) 3.0±0.5

SID303C SID313BP SID1003BQ SID307BR SID1G307C

3.6

Reverse Side 0.8

±0.5

Inner circuit ZD

4.2±0.5

LED

6 . 2

Anode

Anode

Fig.31

Cathode

Cathode

Fig.33 Cathode

1.0min

25.8min

3.5±0.1

Resin: color White

1 . 0 ±

(1.3)

1.7

1 . 3

13.2 16 15 14 13

) 4 5 . 2 (

8 . 3 ø

0.4

4 . 4

1 . 0 ±

5 4 . 0

1 . 0 ±

x a m 5 6 . 0

3.5

12.0

10.0

12 11

10

9

8 . 5

Heatsink 2.0

1

2

3

5 6 7 8

4

Mark

Resin 0.2±0.05 (0.5)

4 . 0

0.3±0.05

146

±

8 . 8 ) 8 . 0 ) ( 7 . 0 (

Resin burr 0.3max Resin heap 1.5max

3 . 0

8 . 4

3.0±0.25

P1.0*3=3.0

±0.25


Part No.

2SA1488/A

Description Power transistor

Page

80

Part No.

Description

Page

SEC2422C

3 x 2.5 Surface Mount 2-Chip LED

139

Part No.

Description

Page

SEL1513E

5ø Inverted-cone LED for Surface illumination

136 134

2SA1567

Power transistor

81

SEC2442C


139

SEL1550CM

5ø Round Narrow-directivity LED, Direct mount supported

2SA1568

Power transistor

82

SEC2462C


139

SEL1610C

5ø Round Standard LED (With Stopper)

134

2SA1908

Power transistor

83

SEC2484C

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

139

SEL1610W


134

2SB1622

Power transistor

84

SEC2492C


139

SEL1615C

5ø Round Narrow-directivity LED

134

2SC3852

Power transistor

85

SEC2494C


139

SEL1710K


134

2SC4024

Power transistor

86

SEC2552C


139

SEL1710KM

5ø Round Standard LED

134

2SC4065

Power transistor

87

SEC2554C


139

SEL1710Y


134

2SC4153

Power transistor

88

SEC2592C


139

SEL1713K


136

2SD2141

Power transistor

89

SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED

139

SEL1810A


134

139

SEL1810AM


134

139

SEL1810D


134

2SD2382

Power transistor

90

SEC2764C

2SD2633

Power transistor

91

SEC2774C

3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED

2SK3710

MOS FET

108

SEC4201C

Side-view Surface Mount LED

138

SEL1810DM


134

2SK3711

MOS FET

109

SEC4203C

Side-view Surface Mount Inner Lens TypeLED

138

SEL1813A


136

2SK3724

MOS FET

110

SEC4401C


138

SEL1850AM

134

2SK3800

MOS FET

111

SEC4401E-TG


138

SEL1850DM

5ø Round Narrow-directivity LED, Direct mount supported 5ø Round Narrow-directivity LED, Direct mount supported

2SK3801

MOS FET

112

SEC4403C


138

SEL1910A


134

2SK3803

MOS FET

113

SEC4403E-TG


138

SEL1910AM


134

2SK3851

MOS FET

114

SEC4501C


138

SEL1910D


134

FKV460S

MOS FET

115

SEC4503C


138

SEL1910DM


134

FKV660S

MOS FET

116

SEC4701C


138

SEL1913K


136 134

134

FP812

Power transistor

92

SEC4703C


138

SEL1950KM


MN611S

Power transistor

93

SEC4801C


138

SEL2110R

3ø Round Type LED

135

MN638S

Power transistor

94

SEC4803C


138

SEL2110S

3ø Round Type LED

135

MP2-202S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4901C


138

SEL2110W

3ø Round Type LED

135

MPL-102S

Ultrafast Recovery Diode (Surface Mount)

130

SEC4903C


138

SEL2210R

3ø Round Type LED

135

PZ628

Power Zener Diode (Surface Mount)

129

SECS1203C

3 x 1.5 Surface Mount Inner Lens TypeLED

138

SEL2210S

3ø Round Type LED

135

SDA03

Power transistor Array (Surface Mount)

96

SECS1803C


138

SEL2210W

3ø Round Type LED

135

SDA04


97

SECS1903C


138

SEL2213C


136

SDC09


98

SECU1D01C

3 x 1.5 Surface Mount LED

138

SEL2215R

3ø Round Type Narrow-directivity LED

136

SDH04

High-side Power Switch IC

24

SECU1E01C


138

SEL2215S


136

SDK06

MOS FET Array ( Surface mount )

117

SECU1V0AC

2.8 x 3.5 Ultraviolet Surface Mount LED

141

SEL2410E

3ø Round Type LED

136

SDK08


118

SECU4E01C


138

SEL2410G

3ø Round Type LED

136

SDK09


119

SEL1110R


134

SEL2413E


136

SEC1101C


138

SEL1110S


134

SEL2413G


136

SEC1201C


138

SEL1110W


134

SEL2415E


136

SEC1203C


138

SEL1210R


134

SEL2415G


136

SEC1401C


138

SEL1210RM


134

SEL2510C

3ø Round Type LED

136

SEC1401E-TG


138

SEL1210S


134

SEL2510G

3ø Round Type LED

136

SEC1403C


138

SEL1210SM


134

SEL2513E


136

SEC1403E-TG


138

SEL1213C


136

SEL2515C


136

134

SEL2610C

3ø Round Type LED

135

134

SEL2613CS-S


136

SEC1501C


138

SEL1250RM

SEC1503C


138

SEL1250SM


SEC1601C


138

SEL1410E


134

SEL2710K

3ø Round Type LED

136

SEC1603C


138

SEL1410EM


134

SEL2710Y

3ø Round Type LED

136

SEC1701C-YG 3 x 1.5 Surface Mount LED

138

SEL1410G


134

SEL2713K


136

SEC1703C


138

SEL1410GM


134

SEL2715K


136

SEC1801C


138

SEL1413E


136

SEL2715Y


136

134

SEL2810A

3ø Round Type LED

135

134

SEL2810D

3ø Round Type LED

135

SEC1803C


138

SEL1450EKM

SEC1901C


138

SEL1450GM-YG


SEC1903C


138

SEL1453CEMKT

4.6 x 5.6ø Egg-shaped LED

134

SEL2813A


136

SEC1E01C


138

SEL1510C


134

SEL2815A


136

SEC1G03C

3 x 1.5 Infrared Surface Mount Inner Lens Type LED

140

SEL1510CM


134

SEL2815D


136

147


Part No.

Page

Part No.

136

SEL6410G

Description

Page

Part No.

3ø Round Type LED, Direct mount supported

135

SELU5B20C

136

SELU5E23C

136

SELU6213C-S

135

SELU6214C

135

SELU6414G-S

135

SELU6614C-S

Description

Page

SEL2910D

3ø Round Type LED

136

SEL6413E

SEL2913K


136

SEL6413E-TG

SEL2915A


136

SEL6414E

SEL2915D


136

SEL6414E-TG

SEL2E10C

3ø Round Type LED

136

SEL6415E

3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

SEL4110R

4ø Round Type LED

134

SEL6510C


135

SELU6614W-S

SEL4110S

4ø Round Type LED

134

SEL6510G


135

SELU6714C

5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported

SEL4114R

135

SEL6513C

SELU6910C-S


135

135

SEL6514C

135

SELU6914C-S

3ø Round Type Wide-directivity LED, Direct mount supported

135

SEL4210R

4ø Round Type LED

134

SEL6515C

3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

136

SEL4114S

4ø Round Type Wide-directivity LED, Direct mount supported 4ø Round Type Wide-directivity LED, Direct mount supported

135

SEP8WD4001

Multi-chip LED Module

142

SEL4210S

4ø Round Type LED

134

SEL6710K


135

SEP8WE4001


142

SEL4214R

135

SEL6710Y


135

SEP8WL4001


142

SEL4214S


135

SEL6714K

135

SEP8WN4001


142

SEL4410E

4ø Round Type LED

135

SEL6714W

135

SEP8WW4001


142

SEL4410G

4ø Round Type LED

135

SEL6715C

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

135

SFPB-54

Schottky Barrier Diode(Surface Mount)

130

SEL4414E


135

SEL6810A


135

SFPB-56


130

135

SEL6810D


135

SFPB-59


130

135

SFPB-64


130

SEL2910A

SEL4414G

3ø Round Type LED

136 136 136 135 135 135 135 135

SEL4510C

4ø Round Type LED

135

SEL6814A


SEL4514C


135

SEL6910A


135

SFPB-66


130

SEL4710K

4ø Round Type LED

134

SEL6910D


135

SFPB-69


130

135

SFPB-74


130

135

SFPB-76


130

135

SFPE-64


130

SEL4710Y

4ø Round Type LED

134

SEL6914A

SEL4714K

135

SEL6914W

SEL4714Y


135

SEL6915A

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

SEL4810A

4ø Round Type LED

134

SEL6E10C


135

SFPJ-53


130

SEL4810D

4ø Round Type LED

134

SELS1E10CXM-M

5ø Round Wide-directivity LED

134

SFPJ-63


130

SEL4814A

135

SELS5223C

SFPJ-73


130

135

SELS5923C

136

SFPL-52

Ultrafast Recovery Diode(Surface Mount)

130

SEL4910A

4ø Round Type LED

134

SELS5B23C

136

SFPL-62


130

SEL4910D

4ø Round Type LED

134

SELS6B13W

136

SFPL-64


130

SEL4914A

135

SELS6B14C

135

SFPM-52

Rectifier Diode(Surface Mount)

130

135

SELS6D14C

135

SFPM-54


130

136

SELS6E14C-M

135

SFPM-62


130

136

SELU1210CXM


134

SFPM-64


130

136

SELU1250CM


134

SFPW-56


130

136

SELU1253CMKT

4.6 x 5.6ø Egg-shaped LED

134

SFPZ-68

Power Zener Diode

129

136

SELU1910CXM-S 5ø Round Wide-directivity LED

134

SG-9CNR

Rectifier Diode for Alternator

127

136

SELU1D10CXM


134

SG-9CNS


127

136

SELU1D50CM


134

SG-9CZR


127

136

SELU1E10CXM


134

SG-9CZS


127

136

SELU1E50CM


134

SG-9LCNR


127

136

SELU2215R-S


136

SG-9LCNS


127

136

SELU2610C-S

3ø Round Type LED

135

SG-9LLCNR


127

136

SELU2710C

3ø Round Type LED

136

SG-9LLCNS


127

136

SELU2B10A-S

3ø Round Type LED

135

SG-9LLCZR


127

SEL5E23C

4ø Round Type Wide-directivity LED, Direct mount supported 4ø Round Type Wide-directivity LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported

5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3ø Inverted-cone LED for Surface illumination, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Wide-directivity LED, Direct mount supported

136

SEL4814D


136

SELU2D10C

3ø Round Type LED

136

SG-9LLCZS


127

SEL6110R


135

SELU2E10C

3ø Round Type LED

136

SG-10LLR


127

SEL6110S


135

SELU4410CKT-S

4ø Round Type LED

135

SG-10LLS


127

5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported

136

SG-10LLXR


127

136

SG-10LLXS


127

136

SG-10LLZ23R


127

136

SG-10LLZ23S


127

136

SG-10LR


127

SEL4914D SEL5220S SEL5223S SEL5420E SEL5423E SEL5520C SEL5523C SEL5620C SEL5723C SEL5820A SEL5823A SEL5920A SEL5923A SEL5E20C

148

Description

SEL6210R


135

SELU5220C-S

SEL6210S


135

SELU5620S-S

SEL6214S

135

SELU5720C

SEL6215S

3ø Round Type Wide-directivity LED, Direct mount supported 3ø Round Type Narrow-directivity LED, Direct mount supported

135

SELU5723C

SEL6410E


135

SELU5820C-S


Part No.

Description

Page

Part No.

Description

Page

SG-10LS


127

SML1516W

5ø Round Standard Bicolor LED

137

SG-10LXR


127

SML1816W


137

SG-10LXS


127

SML19416W


137

SG-10LZ23R


127

SML72420C

3.3 x 6 Rectangular Type Bicolor LED

137

SG-10LZ23S


127

SML72423C

3.3 x 6 Bow-Shaped Type Bicolor LED

137

SG-14LXZS


127

SML72923C


137

SG-14LXZS


127

SML78420C


137

SHV-01JN

High-Voltage Rectifier Diode for Ignition Coil

128

SML78423C


137

SHV-05J


128

SML79420C


137

SHV-06JN


128

SML79423C


137

SI-3001S

Linear Regulator IC

8

SMLS79723C


137

SI-3003S

Linear Regulator IC

10

SMLU12D16W 5ø Round Standard Bicolor LED

137

SI-3101S

Linear Regulator IC

12

SMLU12E16C


137

SI-3102S

Linear Regulator IC

14

SMLU12E16W


137

SI-3201S

Switching Regulator IC

22

SMLU18D16C


137

SI-3322S

System Regulator IC

16

SMLU18D16W-S


137

SI-5151S


26

SMLU72423C-S


137

SI-5152S


28

SMLU79423C-S


137

SI-5153S


30

SPF0001


100

SI-5154S


32

SPF3004

System Regulator IC

18

SI-5155S


34

SPF3006

System Regulator IC

20

SI-5300

Full-bridge Motor Driver IC

60

SPF5002A

Low-side Power Switch IC

50

SID1003BQ

5ø Round Infrade LED

140

SPF5003


40

SID1010CM


140

SPF5004


42

SID1010CXM


140

SPF5007


44

SID1050CM

5ø Round Infrade LED, Direct mount supported

140

SPF5009


52

SID1G307C


140

SPF5012


54

SID1G313C


140

SPF5017


46

SID1K10CM


140

SPF5018


48

SID1K10CXM


140

SPF7211

Stepper-motor Driver IC

58

SID2010C


140

SPF7301

Full-bridge Motor Driver IC

62

SID2K10C


140

SSD103

Power transistor

95

SID303C


140

STA315A

Power transistor Array

101

SID307BR


140

STA335A


102

SID313BP


140

STA415A


103

SJPZ-E18


129

STA460C


104

SJPZ-E27


129

STA461C


105

SJPZ-E33


129

STA463C


106

SJPZ-E36


129

STA464C


107

SJPZ-K28


129

STA508A

MOS FET Array

123

SLA2402M

High Voltage Driver IC for HID Lamps

64

STA509A

MOS FET Array

124

SLA2403M


68

SZ-10N27


129

SLA2501M


36

SZ-10N40


129

SLA2502M


38

SZ-10NN27


129

SLA4708M

Stepper-motor Driver IC

56

SZ-10NN40


129

3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition

125

SLA5027

MOS FET Array

120

TFC561D

SLA5098

MOS FET Array

121

TFC562D

SLA8004


99

SMA2409M


72

SMA5113

MOS FET Array

122

SML11516C


137

SML1216C


137

SML1216W


137

126

149}}

143827062-datashet-automotriz.pdf

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