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Power Electronics Circuits Devices and Applications 4th Edition Rashid Solutions Manual Full download: https://goo.gl/jBSkhi People also search: power electronics circuits devices & applications...
Solutions Manual Power Electronics Circuits, Devices Applications 4th Edition Muhammad H. Rashid https://goo.gl/Jw9By3 power electronics circuits devices and applications pdf power electronics c...
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Fluid Power Devices Circuits
Power Electronics Circuits, Devices and Applications
Power Electronics Circuits, Devices and Applications
Solution manual for microelectronic circuits by adel sedra 4th edition, hand-made with actual values
Solution manual for microelectronic circuits by adel sedra 4th edition, hand-made with actual values
Solution manual for microelectronic circuits by adel sedra 4th edition, hand-made with actual values
Solution manual for microelectronic circuits by adel sedra 4th edition, hand-made with actual valuesFull description
Descrição: Solution manual for microelectronic circuits by adel sedra 4th edition, hand-made with actual values
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Descrição: electronic devices and circuits
electronic devices and circuitsFull description
Prob 2.1
−6 t := 5⋅ 10 rr ( a) Eq. (2.10)
di_dt := 80⋅ 10
6
6
QRR := 0.5⋅ 0.5 ⋅ di_dt⋅ di_dt⋅ trr 2 ( b)
3
QRR ⋅10 = 1 × 10
μC
Eq. (2-11)
IRR := 2⋅ QRR ⋅di_dt
IRR = 400
A
Prob 2.2 t
−6 := 5⋅ 10
rr
t
s
6 A
:= 800⋅ 10
I fall_rate
SF := 0.5
s
rr
−6 −
ta := 1 + SF
ta = 3.333 × 10
t := SF ⋅ t b a
t = 1.667 × 10 b
I
RR
:= I
⋅t
3
fall_rate a
IRR = 2.667 × 10
Using Eq. (2-7), ( a)
1 QRR := 2
⋅t ⋅ t + t
⋅ I
(
1
Q RR := 2
fall_rate a
⋅I ⋅ t + RR
(a
)(
tb
a
b
)
6
3
QRR ⋅10 = 6.667 × 10
μC
6
)
QRR ⋅10 = 6.667 × 10
μC
Using Eq. (2-6), ( b)
I
RR
:= I
3
3
⋅t
fall_rate a
IRR = 2.667 × 10
Page #2-1
Prob 2.3
−6
:= 5⋅ 10
t
SF := 0.5
rr rr
ta = 3.333 × 10
ta := 1 + SF
t = 1.667 × 10 b
t := SF ⋅ t b a 1
−6 −
− 12
m := 2 ⋅ta⋅trr
m = 8.333 × 10
QRR ( x) := m⋅ x Plot of the charge storage verus di/dt
0.008
0.006
QRR (x) (x) 0.004
0.002
0
8
2 .10
4 .10
8
6 .10
8
x di/dt
Chapter 2-Diodes Circuits Page #2-2
8 .10
8
1 .10
9
IRR (x) (x) := ta⋅x Plot of the charge storage verus di/dt 4000
3000 e g a r to
IRR (x) (x) s e
2000 g r a h C
1000
0 1 .10
2 .10 3 .10 4 .10 5 .10
x di/dt
8 .10 9 . 10
−3
VT := 25.8⋅ 10
Prob 2.5
VD2 := 1.6
VD1 := 1.2
Using Eq. (2-3), ( a)
6 .10 7 .10
η :=
D2
−
ID2 := 1500
ID1 := 100
D1
η = 5.725
D2 VT⋅ln D1
x :=
( b)
D1
x = 8.124
η⋅VT
Using Eq. (2-3),
I I := S
D1
D1
x
e
= 1.2
VT⋅η⋅ln
IS Chapter 2-Diodes Circuits Page #2-3
I = 0.03 S
1 . 10
Prob 2-7 VD1 := 2200
VD2 := 2200
−3
I := 20⋅ 10 S1 ( a)
I
I := 35 ⋅ 10 S2
3
R 1 := 100⋅ 10
−3
V
D1
IR1 = 0.022
R1 := R 1
Using Eq. (2-13),
( b)
IR2 :=
−3
IR2 = 7 × 10
IS1 + IR1 − IS2
V
D2
R := 2
5
R 2 = 3.143 × 10
IR2 VD := 2.8
Prob 2.11 IT := 300
I1 = 150 I := 1
IT I2 = 150
2
I2 := I1
VD2 := 2.3
VD1 := 1.4
R
−3
R 1 = 9.333 × 10
VD − V D1
1 := I1
R 2 :=
VD − V D2 I2
I := IT 1 2
Chapter 2-Diodes Circuits Page #2-4
−3
R 2 = 3.333 × 10
Prob 2-13
3
R 2 := 50 ⋅ 10
R 1 := 50⋅ 10
−
I := 20⋅ 10
3
3
VS := 10⋅ 10
−
I := 30⋅ 10
s1 Using Eq. (2-14),
s2
VS
I −I S1
V D2 :=
S2 + R 1
1 R 1
+
3
VD2 = 4.625 × 10
1 R 2
V D1 := V S − V D2
VD1 = 5.375 × 10
Prob 2-15
p Ip := 500
f := 500
−6
t1 := 100⋅ 10
1
3
T ⋅ 10 = 2
T := f
t
I I
AVG
:=
1
p
T
⋅ sin ( 2⋅π⋅f ⋅t) dt
I
AVG
= 3.895
0
t1
I
RMS
I
peak
1⋅
:= I p
sin ( 2⋅π⋅f ⋅t) dt
T ⌡0
:= I
p
Chapter 2-Diodes Circuits Page #2-5
I
= 20.08 RMS
peak Ipeak = 500
3
Prob 2-16
−6
t := 100⋅ 10
I := 120 f := := 500 RMS 1
1
3
T ⋅ 10 = 2
T := f
3
RMS
I := p
I = 2.988 × 10 p
t1
⋅ sin ( 2⋅π⋅f ⋅t) dt
1
T ⌡0 1⋅
:= I
I
p
RMS
t
p
:=
AVG
⌡
T
I I
⌠ t1
T
( sin ( 2⋅π⋅f ⋅t))2 dt
= 120
I
0
RMS
1
sin ( 2⋅π⋅f ⋅t) dt
⋅
I
AVG
= 23.276
0
Prob 2-17 I := 100 AVG 1
f := 500
t := 100 ⋅ 10 1
−6
3
T ⋅ 10 = 2
T := f
AVG
p Ip := 1
T
⌠
t1 2⋅π⋅f ⋅t dt
sin
⋅
I p p = 1.284 × 10
0
t
I I := AVG
p
1
⋅
sin ( 2⋅π⋅f ⋅t) dt
T ⌡0
:= I
I RMS
4
p
IAVG = 100 1⋅
⌠ t1
2
( sin ( 2⋅π⋅f ⋅t))
dt
T ⌡0 Chapter 2-Diodes Circuits Page #2-6
I
RMS = 515.55
Prob 2-18
−6
t := 100⋅ 10 1 − t := 1⋅ 10 5
−6
−6
t := 200⋅ 10 2 f := 250
t := 400⋅ 10 3
:= 150
I
I := 100 b
a
(
)
(
)
IAVG := Ia⋅f ⋅t3 + I b 2⋅ I p b⋅f ⋅ t5 − t4 + 2⋅ p − Ia ⋅f ⋅
( a)
−6
t := 800⋅ 10 4
I := 300 p
( t2 − t1) π
I
( b)
r1 :=
( I p p − Ia)⋅ f ⋅
IAVG = 22.387
( t2 − t1)
Ir1 = 16.771
2 r2 := Ia⋅ f ⋅t3
Ir3 := I b b⋅ f
⋅
Ir2 = 47.434
( t5 − t4)
Ir3 = 22.361
I := I 2 + I 2 + I 2 r1 r3 rms r2
Prob 2-19
−6
t := 100⋅ 10 1 − t := 1⋅ 10 5
−6
−6
t := 200⋅ 10 2 f := 250
Irms = 55.057
t := 400⋅ 10 3
:= 150
I a
(
)
(
I := 100 b
)
2⋅ I p b⋅f ⋅ t5 − t4 + 2⋅ p − Ia ⋅f ⋅ ( a) IAVG := Ia⋅f ⋅t3 + I b
( b)
I
r1 :=
( I p p − Ia)⋅ f ⋅
rms
r1
π
IAVG = 20
Ir2 = 47.434
( t5 − t4)
Ir3 = 22.361
⋅
2+ I
:= I
( t2 − t1)
Ir1 = 0
r2 := Ia⋅ f ⋅t3
I
I := 150 p
( t2 − t1) 2
Ir3 := I b b ⋅ f
−6
t := 800⋅ 10 4
2+ I
r2
2
r3
Chapter 2-Diodes Circuits Page #2-7
Irms = 52.44
Prob 2-20
−6
−6 t := 100 ⋅ 10 1 − t := 1⋅ 10 5
−6
t := 200⋅ 10 2 f := 250
t := 400⋅ 10 3
I := 150 a
t := 800⋅ 10 4
I := 100 b
−6
I := 150 p
Irms := 180
Ir2 := Ia⋅
Ir3 := I b b⋅ f I := r1
Ir2 = 47.434
f ⋅ t3
⋅
2−I
I
2− I
rms
r2
2
Ir1 = 172.192
r3
r1
( a)
p Ip:= f⋅
( t2
r1
( p
I
:= rms
a
−
3
)
t1
I p = 1.69 × 10 p
+ Ia
2
I := I − I ⋅
( b)
Ir3 = 22.361
( t5 − t4)
)
I r1
2
( t2 − t1) f⋅
Ir1 = 172.192
2
+ I 2+ I 2 r3 r2
(
Irms = 180
)
(
)
( t2 − t1)
IAVG := Ia⋅f ⋅t3 + I b b⋅f ⋅ t5 − t4 + 2⋅ I p p − Ia ⋅f ⋅
π
IAVG = 44.512
Chapter 2-Diodes Circuits Page #2-8
Prob 2-21
−6
−6 t := 100 ⋅ 10 1 − t := 1⋅ 10 5
t := 200 ⋅ 10 2 I f := 250
400 ⋅ 10 t := 400⋅ 3 := 150
−6
I := 100 b
a
−6
t := 800⋅ 10 4
I := 150 p
IAVG := 180 ( a) Iav1 = 15
Iav1 := Ia⋅f ⋅t3
I
av2
I
:= I ⋅f ⋅ t − t
av3
(5
b
:= I
AVG
4
−I
)
Iav2 = 5
av1
−I
Iav3 = 160
av2
I
av3
p Ip := 2f ⋅
(
+ Ia
)
2 − t1
I p p = 1.02 × 10
4
π
(
)
(
)
IAVG := Ia⋅f ⋅t3 + b I b⋅f ⋅ t5 − t4 + 2⋅ p I p − Ia ⋅f ⋅