DATA SHEET Triacs and Diacs Order Order code code 47-3412
Manufacturer Manufacturer code code DB3
Description Description DB3 32V DIAC DO-35 (ST)
Triacs and Diacs The enclosed information is believed to be correct, Information may change ‘without notice’ due to product improvement. Users should ensure that the product is suitable for their use. use. E. & O. E. Sales: 01206 751166
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Page 1 of 5 Revision A 04/07/2003
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DB3 /DB4 / DC34
®
TRIGGER DIODES FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
DESCRIPTION
DO 35 (Glass)
High reliability glass passivation insuring parameter stability and protection against junction contami nation.
ABSOLUTE RATINGS (limiting values) Symbol
Parameter
Value
Unit
P
Power dissipation on printed circuit (L = 10 mm)
Ta = 65 °C
150
mW
ITRM
Repe tit ive p ea k o n-st at e cu rren t
tp = 20 µs F= 100 Hz
2
A
Tstg Tj
Storage and operating junction temperature range
- 40 to + 125 - 40 to + 125
°C °C
Value
Unit
THERMAL RESISTANCES Symbol
Parameter
Rth (j-a)
Junction to ambient
400
°C/W
Rth (j-l)
Junction-leads
150
°C/W
April 1995
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DB3 / DB4 / DC34 ELECTRICAL CHARACTERISTICS (Tj = 25 °C) Symbol
VBO
[I+VBOI-I-VBOI] I∆V± I
Parameter
Test Conditions
Breakover voltage *
C = 22nF** see diagram 1
Breakover voltage symmetry Dynamic breakover voltage *
VO
Output voltage *
IBO
Breakover current *
tr
Rise time *
IB
Leakage current *
Value
Unit
DB3
DC34
DB4
MIN
28
30
35
TYP
32
34
40
MAX
36
38
45
V
C = 22nF ** see diagram 1
MAX
∆I = [IBO to I F=10mA]
MIN
5
V
see diagram 2
MIN
5
V
C = 22nF **
MAX
see diagram 3
TYP
1.5
µs
V B = 0.5 VBO max see diagram 1
MAX
10
µA
±
3
V
see diagram 1
100
50
100
µA
* Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices.
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
500 k
220 V 50 Hz
+ IF
D.U.T VO
0 .1 F
10mA
-V
IBO IB
DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5A
+ V 0,5 VBO V
lp 90 %
VBO
- IF
10 % tr
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R = 20
DB3 / DB4 / DC34 Fig.1 : Power dissipation versus ambient temperature (maximum values)
Fig.2 : Relative variation of V BO versus junction temperature (typical values)
VBO[Tj] o VBO[Tj=25 C]
P (mW)
160 1.08
140 120
1.06
100 80
1.04
60 40
1.02
20
o
Tj( C)
o
Tamb ( C) o
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
1.00 25
50
75
100
125
Fig.3 : Peak pulse current versus pulse duration (maximum values)
I TRM (A)
2
F = 100 Hz
o
Tj initial = 25 C
1
0.1
tp ( s)
0.01 10
100
1000
10000
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DB3 / DB4 / DC34 PACKAGE MECHANICAL DATA (in millimeters) DO 35 Glass
B
A
B
note 1 E
O/ C
E note 1
O/ D
O/ D note 2
REF.
DIMENSIONS Millimeters
NOTES
Inches
Min.
Max.
Min.
Max.
A
3.050
4.500
0.120
0.117
B
12.7
0.500
∅
C
1.530
2.000
0.060
0.079
∅
D
0.458
0.558
0.018
0.022
E
1.27
1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59”(15 mm)
0.050
Cooling method by convection and conduction Marking : type number Weight : 0.15 g
Polarity : N A Stud torque : N A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectronics. �
1995 SGS-THOMSON Microelectronics - All rights reserved.
2
Purchase of I C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips 2 2 I C Patent. Rights to use these components in anI C system, is granted provided that the system conforms to 2 the I C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy- Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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