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The Transistor
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TYPE NUMBER INDEX
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B
The Transistor
and Diode Data Book for
Design Engineers
First Edition
Texas Instruments INCORPORATED
CC-413 71242-73-CSS
p rinted
in
u.S.A.
IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in
order
to
improve design
and
to
supply
the
best
product
possible.
Tl
cannot assume any responsibility for any circuits shown or
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New semiconductor products are introduced almost daily; new applications for semiconductor products are being found or comtemplated at an ever-increasing rate, especially in the consumer and automotive fields. It is a difficult task for the equipment design engineer to stay abreast of all of the discrete and integrated-circuit products available to him in his efforts to choose the best device at the optimum cost effectiveness. It is the aim of Texas Instruments to provide the design engineer with the the least
Due
maximum amount of accurate product data organized amount of time. amount of data
in
such a manner that the pertinent data
may be
located in
it would be inconvenient to present Tl's complete line of standard discrete products in a power products are described in The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404); optoelectronic products are presented in The Optoelectronics Data Book for Design Engineers, First Edition (CC-405). For ease of reference, all current devices listed in those two volumes are contained in the Type Number Index (Section O) herein. This 1248-page volume is designed to complement those two volumes and essentially complete the current description of Tl's line of discrete semiconductors by adding all low-power silicon transistors and diodes. (Generally, "low-power" denotes free-air power dissipation of one watt or less.)
to the
single
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involved,
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This volume
contains over 800 silicon transistor types (grown-junction, multijunction, unijunction, and field-effect and over 500 silicon diode types (switching, rectifying, voltage-regulating, voltage-variable-capacitance, and general purpose diodes as well as multielement diode arrays and matrices), over 150 of which are being announced for the transistors)
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Although this volume offers specification and interchangeability data only for low-power silicon transistors and diodes, complete technical information for all Tl semiconductor products is available from your nearest Tl field-sales office, local authorized Tl distributor, or by writing direct to: Marketing and Information Services, Texas Instruments Incorporated, P.O. Box 5012, Dallas, Texas 75222.
We hope library.
that
you
will find
The Transistor and Diode Data Book for Design Engineers
data book but still available from Texas Instruments. OPTO— Refer to The Optoelectronics Data Book for Design Engineers, F irst Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404) in this
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALLAS. TEXAS 7S222
0-3
TYPE NUMBER INDEX
TYPE NO.
4-20
2N1048B
2N492A 2N492B 2N493 2N493A 2N493B
4-20
2N1049 2N1049A
4-20
4-20
2N1049B 2N1050 2N1050A
POWER POWER
2N1050B 2N1131
*
2N1132 2N1149 2N1150
4-20 4-20
2N497
.
.
.
.
.
2N498
.
.
.
.
.
2N541
.
.
.
.
.
.
.
*
.
.
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.
*
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.
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.
.
.
.
2N717
2N718
2N542 2N543 2N656 2N657 2N696
2N697 2N698 2N699
SEC-PAGE
TYPE NO.
SEC-PAGE
2N492
.
.
.
.
.
.
.
.
.
.
.
.
.
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.
.
.
.
.
.
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.
POWER POWER POWER POWER POWER POWER POWER
.
.
.
.
.
4-61
.
.
.
.
.
4-61
.
.
.
.
.
4-63
.
.
.
.
.
4-63
POWER POWER
2N1151
.
.
.
.
.
4*3
2N1152
.
.
.
.
.
4-63
.
4-23
2N1153
.
.
.
.
.
4-63
.
.
4-23
2N1154
.
.
.
.
.
4-65
.
.
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4-25
.
.
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4-65
.
.
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4-25
2N1155 2N1156
.
.
.
.
.
4-65
.
.
.
.
.
4-27
2N1276
.
.
.
.
.
.
.
4-27
2N1277
.
.
4-27
2N1278 2N1279
.
.
2N718A 2N719 2N719A 2N720 2N720A
4-31
4-31
2N1420 2N1507 2N1566
4-31 4-31
...
* *
.
.
4-68
.
.
.
.
.
4-68
2N2160 2N2192 2N2192A
.
.
.
.
4-70
2N2193
..."
4-34
2N1586
.
.
2N722
.
.
.
.
.
4-34
2N1587
.
.
2N730
.
.
.
.
.
4-36
2N1588
.
.
2N731
.
.
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4-36
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4-38
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.
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4-38
2N1591
2N851
.
.
.
.
.
4-40
.
.
.
.
.
4-40
2N1592 2N1593
.
.
.
.
.
4-42
2N871
.
.
.
.
.
4-42
2N910
.
.
.
.
.
4-44
2N911
.
.
.
.
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4-44
2N912
.
.
.
.
.
4-44
2N917
.
.
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4-46
.
.
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4-48
2N1599 2N1613
.
.
.
.
.
4-52
2N1671
.
.
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.
4-52
.
.
.
.
.
4-54
2N1671A 2N1671B
.
.
.
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.
4-56
2N1711
.
.
.
.
.
4-57
.
.
.
.
.
4-59
2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720
2N852 2N870
2N918 2N929 2N930 2N956 2N997 2N998 2N999 2N1047
2N1047A 2N1047B 2N1048 2N1048A
.... .... ....
2N1594 2N1595 2N1596 2N1597 2N1598
POWER POWER POWER POWER POWER
*
.
.
... ... ... ... ...
0-4
in this
data book but
still
*
2N2221
.
POWER POWER POWER POWER POWER
.
.
4-71
.
.
.
4-73
.
.
.
4-73
.
.
.
4-73
.
.
.
4-75
2N2270 2N2303
POWER POWER POWER POWER POWER POWER POWER
2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393
.
.
.
.
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.
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.
.
.
.
.
.
.
.
.
.
.
.
.
*
available
First Edition (CC-404).
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
4-77 4-77
POWER POWER 4-79 4-79 4-79 4-81
4-83
....
2N2221A 2N2222 2N2222A
4-83
POWER POWER 4-86
4-88
....
4-88 4-88
....
2N2220
*
POWER POWER POWER POWER POWER POWER POWER 4-77
2N2194 2N2194A
*
...
*
....
....
*
*
....
2N2193A
2N2217 2N2218 2N2218A 2N2219 2N2219A
from Texas Instruments. POWER— Refer to The Power Semiconductor Data Book for Design Engineers, •Not shown
4-254 TI145A SERIES POWER *Not shown in this data book but still available from Texas Instruments. OPTO— Refer to The Optoelectronics Data Book for Design Engineers, F irst Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404). .
.
.
.
Texas INCORPORATED Instruments post oFFice aox soi2
to Tha Optoelectronics Data Book for Design Engineers, First Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).
OPTO-Refer
0-10
SEC-PAGE
TYPE NO.
POWER
.
TID129 TID130
SEC-PAGE
TYPE NO.
TID125
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10-109 10-109 .
.
OPTO 11-1
Glossary
INDEX Page General
Letter Symbols, Terms, Signal Diodes
and
"
1
Terms and Definitions
1
1-3
and Definitions
Rectifiers
Letter Symbols, Terms,
"
1
Terms and Definitions
7
I' 7
and Definitions
Voltage-Regulator and Voltage-Reference Diodes
Terms and Definitions
1_12
Letter Symbols, Terms, and Definitions
1-12
Voltage-Variable-Capacitance Diodes
Letter Symbols, Terms,
"
1
Terms and Definitions and Definitions
14
1-14
Multifunction Transistors
Terms and Definitions
1-1
5
Letter Symbols, Terms, and Definitions
1-1
7
Unijunction Transistors 1 '
Terms and Definitions Letter Symbols, Terms,
and Definitions
27
1"27
Field-Effect Transistors
Terms and Definitions Letter Symbols, Terms, and Definitions
Standards Documents
'
1
29
1-31 ''•*'
GLOSSARY GENERAL GLOSSARY Introduction This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with semiconductor devices. Most of the information was obtained from JEDEC Publication No. 77. That document has over-riding authority where
any conflict may occur.
GENERAL Terms and Definitions Term anode
Definition
The electrode from which the forward current flows within the device.
anode bipolar transistor
breakdown
^j
> forward current
cathode
A transistor that utilizes charge carriers of both A phenomenon
occuring
a
in
junction, the initiation of which
is
polarities.
reverse-biased
semiconductor
observed as a transition from a
region of high small-signal resistance to a region of substantially
lower
small-signal
resistance
for
an
increasing
magnitude of
reverse current.
breakdown region
A region of the volt-ampere characteristic beyond the initiation of breakdown for an increasing magnitude of reverse current.
breakdown voltage
The
voltage measured
region. (Ref
blocking
A
state of a
at
MIL-S-19500D
a
specified current in a
breakdown
Par. 20.3)
semiconductor device or junction which essentially
prevents the flow of current.
cathode
The electrode to which the forward current flows within the device.
electrode
forward bias
For diagram, see "anode".
An electrical and mechanical contact to a region of a semiconductor device. The
bias
which tends to produce current flow
in
the forward
direction.
l> current flow
"-^T forward direction
The
direction of current flow which results
semiconductor region
is
when the
at a positive potential
p-type
relative to the
n-type region. (Ref IEEE 253) open-circuit
A
rectifying junction
A
circuit in which halving the magnitude of the terminating impedance does not produce a change in the parameter being measured greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.8)
junction
in
a
semiconductor device which exhibits asym-
metrical conductance.
Texas INCORPORATED Instruments POST OFFICE BOX 50X2
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GLOSSARY GENERAL Definition
Term The
reverse bias
which tends to produce current flow
bias
—
direction.
+
~^MThe
reverse direction
current flow
direction of current flow which results
semiconductor region
is
the reverse
in
when
at a positive potential
the n-type
relative to the
p-type region.
semiconductor device
A
whose
device
essential characteristics are
governed by the flow
of charge carriers within a semiconductor.
semiconductor diode
A
semiconductor device having two terminals and exhibiting a
nonlinear voltage-current characteristic; in more restricted usage, voltagea semiconductor device which has the asymmetrical
exemplified
characteristic
current
by
a
single
p-n
junction.
(Ref IEEE 270)
semiconductor junction
A region of transition
(commonly
electrical
referred to
properties
between semiconductor regions of different (e.g.,
n-n+, p-n, p-p+ semiconductors), or
as junction)
between a metal and a semiconductor.
short-circuit
A
small-signal
A
circuit in which doubling the magnitude of the terminating impedance does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.16)
which when doubled in magnitude does not produce a the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D signal
change
in
Par. 20.17)
non-varying value or quantity measured at a specified fixed point, or the slope of the line from the origin to the operating point on the appropriate characteristic curve. (Ref
A
static value
IEEE 255
An
terminal
Par. 2.2.1)
externally available point of connection to
one or more
electrodes.
thermal resistance (steady-state)
transient thermal
impedance
The temperature difference between two specified points regions divided by the power dissipation under conditions thermal equilibrium. (Ref IEEE 223) The change of temperature
difference between
two
or of
specified
points or regions at the end of a time interval divided by the stepfunction change in power dissipation at the beginning of the same
time interval causing the change of temperature difference. (Ref
IEEE 223) transistor
An
active
semiconductor device capable of providing power
amplification and having three or
147-0 Par. 0-2.8)
1-2
Instruments Texas INCORPORATED POST OFFICE BOX 5012
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more
terminals.
(Ref IEC
GLOSSARY GENERAL Letter Symbols, Terms,
and Definitions
Symbol F or
NF*
Term
Definition
average noise figure*
The
ratio of
(
1
)
the total output noise power within a
designated output frequency band average noise factor*
when
temperature of the input termination(s)
the noise is
at the
reference noise temperature. To, at all frequencies to (2) that part of (1) caused by the noise temperature
of the designated signal-input termination within a designated signal-input frequency band.
ForNF*
spot noise figure*
The
or
ratio of (1) the total
bandwidth
output noise power per unit
(spectral density) at a designated
output frequency when the noise temperature of the input termination(s) is at the reference noise temperature.
spot noise factor*
To. at all frequencies to (2) that part of (1 ) caused by the noise temperature of the designated signal-input termination at a designated signal-input frequency.
forward current, dc
•F
The dc current junction
noise current,
in
that flows through a semiconductor
the forward direction.
The noise current of an ideal current source (having a source impedance equal to infinity) in parallel with the input terminals of the device that, together with
equivalent input
the equivalent input noise voltage, represents the noise of the device. reverse current,
dc
The dc current
that flows through a semiconductor
junction in the reverse direction. Rfl
(formerly 6)
R0CA
thermal resistance
Refer to thermal resistance (steady-state), page 1-2.
thermal resistance,
The thermal
case-to-ambient
case to the ambient.
resistance (steady-state)
from the device
RflJA (formerly 0j_a)
thermal resistance,
The
junction-to-ambient
semiconductor junction
RflJC (formerly 0j-c)
thermal resistance,
The
junction-to-case
semiconductor junction (s) to a stated location on the
thermal
thermal
resistance
(steady-state)
(s)
resistance
from
the
from
the
to the ambient.
(steady-state)
case.
Sf
or S21
forward transmission
The
coefficient
voltage incident
port
ratio of the voltage at the
terminated
output port to the
on the input port with the output in
a
purely
resistive
reference
impedance equal to the impedance of the source of the incident voltage.
•NF and NF abbreviations are often used for symbols F and F; however, the symbols F and F are preferred. TThese quantities may be expressed logarithmically in decibels (dB).
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GLOSSARY GENERAL
sj
or si
1
Definition
Term
Symbol
from the input port
input reflection
The
coefficient
to the voltage incident on the input port with the output port terminated in a purely resistive reference
ratio of the voltage reflected
impedance equal to the impedance of the source of the incident voltage.
Soors22
ratio of the voltage reflected from the output port to the voltage incident on the output port with the input port terminated in a purely resistive
The
output reflection coefficient
reference impedance equal to the impedance of the
source of the incident voltage.
sr
orsi2
ratio of the voltage at the input port to the
reverse transmission
The
coefficient
voltage incident
port
on the output port with the input
terminated
a
in
purely
resistive
reference
impedance equal to the impedance of the source of the incident voltage.
TA
free-air
air temperature measured below a device, in an environment of substantially uniform temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces.
The
temperature or
ambient temperature
(Ref MIL-S-19500D Par. 20.20.1)
TC
The temperature measured
case temperature
the
of
case
at a specified location
device.
a
(Ref
on
MIL-S-19500D
Par. 20.20.2)
temperature representing the temperature of the on the basis of a simplified model of the thermal and electrical behavior of the
virtual junction
A
temperature
junction(s) calculated
semiconductor device.
NOTE:
This term "virtual junction temperature"
taken from
I
EC
standards.
It is
is
particularly applicable
to multijunction semiconductors and
is
used
in this
publication to denote the temperature of the active in required when element semiconductor specifications and test methods.
junction temperature"
is
The term
"virtual
used interchangeably with
the term "junction temperature" in this publication.
'stg
The temperature power applied,
storage temperature
Par. 20.20.3)
14
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at is
which the device, without any (Ref MIL-S-19500D stored.
GLOSSARY GENERAL Symbol
Term
Definition
noise temperature
The uniform
physical absolute temperature (kelvin)
which a network (and all its sources, if a multiport) would have to be maintained if it (and its sources) were passive in order to make available (or deliver) the same random noise power per unit bandwidth at
(spectral density) at a given frequency as
available (or delivered)
TO
is
actually
from the network.
A specified absolute temperature (kelvin) to be assumed as a noise temperature at the input ports of a network when calculating certain noise parameters, and for normalizing purposes. When the reference
reference noise temperature
noise temperature
is 290 K, it is considered to be the standard reference noise temperature.
delay time
The time interval from the point at which the leading edge of the input pulse has reached 10 percent of its maximum amplitude to the point at which the leading edge of the output pulse has reached 10 percent of its maximum amplitude. (Ref MIL-S-19500O
fall
time
Par. 20.11)
The time duration during which the trailing edge of a pulse is decreasing from 90 to 10 percent of its
maximum
amplitude.
(Ref
MIL-S-19500D
Par. 20.12)
toff
turn-off time
The sum of
ts
+
tf.
ton
tum-on time
The sum of
td +
tf.
tp
pulse time
The time duration from the point on the leading edge which is 90 percent of the maximum amplitude to the point on the trailing edge which is 90 percent of
maximum
the
amplitude.
(Ref
MIL-S-19500D
Par. 20.15)
rise
time
The time duration during which the leading edge of a is increasing from 10 to 90 percent of its
pulse
maximum storage time
amplitude. (Ref MIL-S-19500 Par. 20.13)
The time
interval from a point 90 percent of the amplitude on the trailing edge of the input pulse to a point 90 percent of the maximum amplitude on the trailing edge of the output pulse.
maximum
(Ref
MIL S 19500D
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1-5
GLOSSARY GENERAL Symbol
Definition
Term pulse average time
The time duration from the point on the leading edge which is 50 percent of the maximum amplitude to a point on the trailing edge which is 50 percent of the MIL-S-19500D (Ref amplitude. maximum Par. 20.10)
•
.
90%
..OUTPUT PULSE
DIAGRAM ILLUSTRATING PULSE TIME SYMBOLOGY
VF
forward voltage, dc
The dc
voltage
across
a semiconductor junction
associated with the flow of forward current.
noise voltage of an ideal voltage source (having a source impedance equal to zero) in series with the input terminals of the device that, together with the equivalent input noise current, represents the noise of
The
noise voltage,
equivalent input
the device.
VR
reverse voltage,
dc
voltage applied to a semiconductor junction which causes the current to flow in the reverse
The dc
direction.
1-6
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GLOSSARY SIGNAL DIODES AND RECTIFIERS SIGNAL DIODES AND RECTIFIERS Terms and Definitions Term semiconductor
rectifier
Definition
A
semiconductor diode having an asymmetrical voltage-current characteristic, used for rectification, and including its associated
diode
housing, mounting, and cooling attachments
Graphic symbol
semiconductor
for
a semiconductor
diode (Ref
signal
Anode semiconductor
signal
A
diode
if
integral
rectifier
with
it.
diode and a
ANS
Y32.2): -envelope optional
H
^W^Catho. 1 Cathode 1
semiconductor diode having an asymmetrical voltage-current and used for signal detection.
characteristic
For graphic symbol, see above.
Letter Symbols, Terms, and Definitions
(For illustration of the following currents refer to diagrams on page 1-10) Symbol 'F(RMS).
If,
•F.
'F(AV).
•F.
IFM
Term
Definition
forward current
The
page 1-11)
(see table,
respective value of current that flows through a
semiconductor diode or
rectifier
diode
in
the forward
direction.
'FRM
forward current,
"fsm
The peak
peak
repetitive
value of the forward current including
all
repetitive transient currents.
forward current,
The maximum
surge peak
specified
(peak) surge forward current having a
waveform and
a short specified time inter-
val.
'0
average rectified
The value of the forward current averaged over a full cycle of half-sine-wave operation at 60 Hz with a
forward current
conduction angle of 180°.
IR(RMS).
Ir.
'R. lR(AV). 'R.
The
reverse current
page 1-11)
(see table,
respective value of current that flows through a
semiconductor diode or
IRM
•R(REC).
reverse recovery
The
'RM(REC)
current
associated with a change
page 1-11)
(see table,
'rrm
diode
in
the reverse
transient
component
of
reverse
current
from forward conduction to
reverse voltage.
The maximum
reverse current, repetitive
Irsm
rectifier
direction.
peak
(peak) repetitive instantaneous reverse
current.
reverse current,
The maximum
surge peak
specified
(peak) surge reverse current having a
waveform and a short specified time
inter-
val.
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1-7
GLOSSARY SIGNAL DIODES AND RECTIFIERS
PF. PF(AV).
PF.
PFM
forward power
The power
dissipation
respective forward current.
(see table,
PR.PRlAV). PR.
Qs
PRM
Definition
Term
Symbol
reverse
from the flow of the
page 1-11)
power
(see table,
dissipation resulting
The power
dissipation
from the flow of the
dissipation resulting
respective reverse current.
page 1-11)
The
stored charge
total
amount of charge recovered from
a diode
minus the capacitive component of that charge when the diode is switched from a specified conductive condition to a specified
non-conductive condition
with other circuit conditions
JEDEC
Standard
Suggested
recover the largest possible
Re
thermal resistance
Seepages 1-2 and
Tj
junction temperature
Seepage
tfr
forward recovery time
The time required recover
(as
No.
described 1)
amount of
in
EIA-
optimized to charge.
1-3.
1-4.
to
a
for
specified
the current or voltage to value
after
instantaneous
switching from a stated reverse voltage condition to a stated forward current or voltage condition in a given circuit.
SPECIFIED '
L ~ RECOVERY^
RECOVERY VOLTAGE
TIME-
TIME
pulse time
time
tr
rise
trr
reverse recovery time
See pages 1-5 and
1-6.
See pages 1-5 and
1-6.
The time recover
to
required for the current or voltage to a specified value after instantaneous
switching from a stated forward current condition to a given a stated reverse voltage or current condition in circuit.
1-8
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GLOSSARY SIGNAL DIODES AND RECTIFIERS Symbol t
Term
w
Definition
pulse average time
Seepage
V(BR).
breakdown voltage
V(BR)
instantaneous total value)
VF(RMS), Vf, V F. Vp(AV).
(see table,
VF,
The value of voltage
(dc,
forward voltage
at
which breakdown occurs.
The
resulting
The
voltage applied to a semiconductor diode which
voltage drop in a semiconductor diode from the respective forward current.
page 1-11)
VFM
VR(RMS). V r VR, Vr( AV ), VR,
1-6.
,
reverse voltage (see table,
page 1-11)
causes the respective current to flow in the reverse
Vrm
Vrwm
direction.
working peak
The maximum instantaneous
reverse voltage
voltage, excluding
all
value of the reverse
transient voltages,
which occurs
across a semiconductor rectifier diode.
Vrrm
repetitive
The maximum instantaneous
peak
reverse voltage
voltage, including
excluding
all
all
value of the reverse
repetitive transient voltages but
nonrepetitive transient voltages, which
occurs across a semiconductor rectifier diode.
V RSM
nonrepetitive
The maximum instantaneous value of the
peak reverse
voltage including
all
but excluding
repetitive transient voltages,
voltage
all
reverse
nonrepetitive transient voltages
which
occurs across a semiconductor rectifier diode.
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1-9
GLOSSARY SIGNAL DIODES AND RECTIFIERS DIAGRAMS ILLUSTRATING SYMBOLS FOR DIODE CURRENTS AND VOLTAGES I.
FORWARD CURRENT AND VOLTAGE: Maximum
Maximum
(peak) repetitive value
Tl
7/
T
(peak) surge value
fsm
Ifrm
.L
'F
/-iAverage value, 180° conduction angle,
Instantaneous total value
Maximum
60 Hz,
(peak) total value
TV _
half sine
wave
Vf(AV). -
VFM
Average value with alternating
J
on IFRM—
component
— Maximum
(peak)
repetitive value
Average value with alternating
A II.
component
'FM"
Maximum
(peak)
total value
.
REVERSE CURRENT AND VOLTAGE:
t,
_4 Irrm^.
,R
v
Instantaneous total value
Maximum
(peak) repetitive value
VR(AV)
VRRM
t
V>
Average value with -^"alternating component
^
J
_4
Maximum
T/ VrsM
__1 Maximum
1-10
(peak) total value
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(peak)
surge value
GLOSSARY SIGNAL DIODES AMD RECTIFIERS
TABLE OF SYMBOLS FOR CURRENT, POWER, AND VOLTAGE Total
GLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES Terms and Definitions Definition
Term device
The
cathode
A
when
it is
biased to operate in
its
breakdown
region.
electrode from which the reverse current flows within the
device
voltage-reference diode
the reverse current flows within the
electrode to which
The
anocte
when
diode which
region of across
its
biased to operate in
it is
is
its
breakdown
normally biased to operate
in
region.
the breakdown
voltage-current characteristic and which develops terminals a reference voltage of specified accuracy,
its
to operate throughout a specified current and temperature range. (Ref IEC 147-0, Par. 0-2.3)
when
biased
Graphic symbol for voltage-reference diode (Ref
»
reverse current
^-^
Cathode envelope optional
A
voltage-regulator diode
diode which
region of across
its
its
is
ANS Y32.2)
Hj4"1 Anode
^"^
normally biased to operate in the
breakdown
voltage-current characteristic and which develops
terminals an essentially constant voltage throughout a
specified current range. (Ref
Par. 0-2.4)
IEC 147-0,
Graphic symbol for voltage-regulator diode. (Ref
>
reverse current
ANS
Y32.2)
^"-^.
Cathode
/ M ^
J
Anode
*^^ envelope optional and Definitions of the following currents and
Letter Symbols, Terms,
(For
illustration
Symbol
voltages refer to diagrams
Definition
Term
The value of dc current
forward current, dc
IF
in
reverse current,
IR
on page 1-13)
The value of dc current
dc
that flows through the diode
the forward direction. that flows through the diode
in the reverse direction.
_ I
'
ZK •ZM ,
dc near breakdown knee,
The value of dc reverse current that flows through the diode when it is biased to operate in its breakdown region and at a point on its voltage-current character-
dc maximum-rated current)
istic
as follows:
\Z-
a
regulator current.
reference current (dc,
specified
operating point between
lz« and
IZM IZK a 'ZM a :
:
specified point based
power. See page
junction temperature
112 I*
1-4.
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breakdown knee on the maximum-rated
specified point near the
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GLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES Symbol
VF
Term forward voltage, dc
Definition
The voltage drop
in
the diode, resulting from the dc
forward current.
Vr
reverse voltage,
dc
The voltage applied to the diode which causes the dc current to flow
V2M
in
the reverse direction.
regulator voltage,
The
reference voltage
biased to operate in
its
specified point in
voltage-current characteristic as
(dc,
dc at maximum-
rated current)
value of dc voltage across the diode
its
when
breakdown region and
it is
at a
follows:
V Z at 'Z (see previous page) VZM at Izm (see previous page) :
:
z z.
regulator impedance,
The
zzk.
reference impedance,
biased to operate in
(small-signal, at lz,
specified point in
z zm
at
l
Z K.
at
l
ZM
)
small-signal
impedance of the diode when its breakdown region and its
it
is
at a
voltage-current characteristic as
follows: z z at lz (see previous page) z zk at Izk (see previous page) :
:
z zm
:
at
'ZM
(see previous page)
BREAKDOWN KNEE
DIAGRAM ILLUSTRATING SYMBOLS FOR CURRENTS AND VOLTAGES
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1-13
.
GLOSSARY VOLTAGE-VARIABLE-CAPACITANCE DIODES VOLTAGE-VARIABLE-CAPACITANCE DIODES Terms and Definitions Definition
Term voltage-variable-
A
capacitance diode
property that
two-terminal semiconductor device its
in
which use
is
made of the
capacitance varies with the applied voltage,
(varactor diode)
voltage-variable-capacitance diode used for rf tuning. This includes functions such as automatic frequency control (AFC)
A
tuning diode
and automatic
Letter Symbols, Terms,
and Definitions Definition
Term
Symbol <*C
fine tuning (AFT).
temperature coefficient
The
of capacitance
in
ratio of the
temperature.
change
The
in capacitance to the
ratio
is
temperature change. (For symbol: Ref
total
Y10.5-1968
USAS
Par. 3.6)
The capacitance between the diode
case capacitance
change
an average value for the
terminals of the
case with the semiconductor chip not installed or
semiconductor
the
with
chip
installed
but
not
connected.
The
junction capacitance
small-signal
capacitance between the contacts
of an uninstalled semiconductor chip.
The
total capacitance
total small-signal capacitance
terminals of a complete device. (Ct
Ctl
The
capacitance ratio
ratio of total capacitance at
between the diode
» Cc + Cj).
one voltage to
total
capacitance at another voltage.
Ct2
The frequency
cut-off frequency
equal to
at
which the figure of merit
The inductance between
series inductance
Q
is
1
specified points
on the diode
terminals.
V
efficiency
The
Q
figure of merit
Two
ratio of
output power to input power.
pi (27r)
times the ratio of the energy stored per
cycle to the energy dissipated per cycle.
1-14
series resistance,
The
small-signal
terminals.
junction temperature
Seepage
total small-signal resistance
1-4.
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between the diode
)
GLOSSARY MULTUUNCTION TRANSISTORS MULTIJUNCTION TRANSISTORS Terms and Definitions Tern» 1,886
*
Definition
8 b'
A
region which
between an emitter and a collector of a transistor and into which minority carriers are injected. (Ref. 60
'
lies
IRE 28.S1)
A
collector (C, c)*
region through which a primary flow of charge carriers leaves
60 IRE 28.S1)
the base. (Ref.
A
emitter (E,e)*
region from which charge carriers that are minority carriers in
the base are injected into the base.
A
junction, collector
semiconductor
junction
(
Ref.
normally
60 RE 28.S1 I
biased
in
the
reverse
direction, the current through
introduction
of
minority
which can be controlled by the carriers into the base. (Ref. 60
IRE28.S1) junction, emitter
A
semiconductor
direction
to
normally biased in the forward minority carriers into the base. (Ref. 60
junction
inject
IRE28.S1)
A
saturation
base-current and a collector-current condition resulting in a
Emitter Emitter •References to bate, collector and emitter symbolism
c,
6.
and
e) refer to the device terminals
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connected to those regions.
m5
GLOSSARY MULTUUNCTION TRANSISTORS
Definition
Term transistor,
programmable unijunction
A P-N-P-N thyristor that, together with two external resistors, can generate a current-voltage characteristic similar to that of a unijunction transistor. The unijunction parameters n. rjjB. 'P. and ly
(see pages
1-27 and 1-28) can be varied by selection of
the values of the two
resistors.
BASE
B2
2,
;R2
ANODE. A 6 Interbase Resistance
GATE, G
rgB
**
R1 + R2 R1
•R1
Intrinsic
Standoff Ratio n
<*
R1+R2
CATHODE, K
BASE
1,
B1
PROGRAMMABLE UNIJUNCTION CIRCUIT
vakWebd SATURATION REGION
V F (VEB1(sat)) ••Ia('e)
DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC OF THE PROGRAMMABLE UNIJUNCTION CIRCUIT
1-16
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GLOSSARY MULTUUNCTION TRANSISTORS Letter Symbols, Terms,
and Definitions
Symbol
Term
Definition
Ccb.
interterminal
The
Cce,
capacitance
terminal
Ceb
(collector-to-base,
direct
interterminal
capacitance between the
by the
indicated
first subscript and the reference terminal indicated by the second subscript, with the respective junction (collector-base, collector-
collector-to-emitter,
emitter-to-base)
emitter,
emitter-base)
remaining terminal circuited
to
dc,
reverse-biased
and with the
(emitter, base, collector) open-
but ac-connected
to
the
guard
terminal of a three- terminal bridge.
This capacitance includes the interelement capacitances plus capacitance to the shield where the shield is
connected to one of the terminals under measure-
ment. Cjbo.
open-circuit input
The capacitance measured
Cjeo
capacitance (common-!
(emitter
and
across the input terminals
base
and emitter) with collector open-circuited for ac. (Ref IEEE 255)
the
common-emitter)
Qbs.
short-circuit input
The capacitance measured
across the input terminals
Cjes
capacitance (common-t
(emitter
common-emitter)
collector short-circuited to the reference terminal for ac.
base,
and
and
base
base,
emitter)
the
(Ref IEEE 255)
c obo.
open-circuit output
The capacitance measured
Coeo
capacitance (common-l
(collector
common-emitter)
input open-circuited to ac. (Ref IEEE 255)
Cobs.
short-circuit
Coes
capacitance (common-l
(collector
common-emitter)
third
output
with
and
across the output terminals
base, collector and emitter) with the
The capacitance measured
across the output terminals and base, collector and emitter) with the
terminal
short-circuited
terminal for ac. (Ref
to
the
reference
IEEE 255)
Crbs.
short-circuit reverse
The capacitance measured from the output
Cres
transfer capacitance
to the input terminal with the respective reference terminal (base or emitter) and the case, (unless
(common-base,
common-emitter)
terminal
connected internally to another terminal) connected to the guard terminal of a three-terminal bridge and with the device biased into the active region.
Ctc,
depletion-layer
The part of the capacitance
Cte
capacitance
emitter-base)
(collector, emitter)
depletion layer.
junction
across the (collector-base,
that
is
associated
with
its
NOTE: This capacitance is a function of the total potential difference across the depletion layer. (Ref I
EC
147-0 Par. 11-4.8,4.9)
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1-17
GLOSSARY
MULTUUNCTION TRANSISTORS
fhfb.
fhfe
Definition
Term
Symbol
ForF
noise figure, average or spot
See page
small-signal short-
The lowest frequency
1-3.
at
which the modulus (magni-
current transfer ratio
tude) of the small-signal short-circuit forward current transfer ratio is 0.707 of its value at a specified low
cutoff frequency
frequency (usually
forward
circuit
1
kHz or
less).
(Ref IEEE 255)
(common-base,
common-emitter)
The maximum frequency at which a transistor can be made to oscillate under specified conditions.
maximum frequency of oscillation
NOTE: This approximates to the frequency at which maximum available power gain has decreased to
the
unity. (Ref
IEC 147-0
Par. 11-4.17)
The product of the modulus (magnitude) of the
transition frequency
common-emitter
or
small-signal
frequency at which
current transfer ratio,
small-signal forward
measurement when
current transfer
so that
|hfe |
mately 6
dB
ratio
(common-emitter)
|hf e |,
short-circuit
forward
and the frequency of
this frequency
is
sufficiently high
decreasing with a slope of approxi-
is
per octave. (Ref IEEE 255)
extrapolates to unity
which the modulus (magnitude) of
frequency of unity
The frequency
current transfer ratio
the common-emitter small-signal short-circuit forward current transfer ratio, |hfe |, has decreased to unity.
at
(Ref IEC 147-0 Par. 11-4.19)
GPB.
large-signal insertion
GpE
power gain (commonbase,
small-signal insertion
Gpe
power gain (common-
GTB.
GTE
delivered to the input.
common-emitter)
Gpb.
base,
The ratio, usually expressed in dB, of the signal power delivered to the load to the large-signal power
The ratio, usually expressed in dB, of the signal power delivered to the load to the small-signal power delivered to the input.
common-emitter)
The ratio, usually expressed in dB, of the power delivered to the load to the maximum signal power available from the source.
large-signal transducer
power
gain (common-base,
common-emitter)
G t b.
small-signal transducer
Gte
power gain (common-base, common-emitter)
hFB.
static
hFE
transfer ratio
base,
1-18
The ratio, usually expressed in dB, of the power delivered to the load to the maximum signal power available from the source.
The
forward current
common-emitter)
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
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large-
signal
small-
dc output current to the dc input MIL-S-19500D Par. 30.28)
ratio of the
current. (Ref
(common-
signal
GLOSSARY MULTIJUNCTION TRANSISTORS Symbol
Term
hfb.
small-signal short-
hfe
circuit
Definition
The
ratio of the ac
output current to the small-signal ac input current with the output short-circuited to ac. (Ref MIL-S-19500D Par. 30.20)
forward
current transfer ratio (common-base, common-emitter)
hib.
small-signal short-
The
ratio of the small-signal ac input voltage to the ac input current with the output short-circuited to ac. (Ref MIL-S-19500D Par. 30.24)
impedance (common-base,
circuit input
common emitter) n ie(imag) or lm(hj e )
imaginary part of the
The
ratio of the out-of-phase (imaginary) component of the small-signal ac base-emitter voltage to the ac base current with the collector terminal short-
small-signal shortcircuit input
impedance
(common-emitter) n ie(real) or Re(hje)
"ob. h oe
real part
circuited to the emitter terminal for ac.
of the small-
The
(common-emitter) small-signal open-
The
small-signal
input impedance.
circuit
ratio of the ac output current to the small-signal ac output voltage applied to the output terminal, with the input open-circuited to ac. (Ref
output
admittance
(common-base. common-emitter) n oe(imag) or
Im(hoe)
MIL-S-19500D
imaginary part of the
The
small-signal open-circuit
phase
or
Re(hoe)
real part
Par. 30.15)
ratio of the ac collector current to the out-of-
(imaginary) component of the small-signal collector-emitter voltage with the base terminal opencircuited to ac.
output admittance. (common-emitter)
n oe(real)
ratio of the in-phase
(real) component of the ac base-emitter voltage to the ac base current with the collector terminal short-circuited to the emitter terminal for ac.
signal short-circuit
of the small-
The
signal open-circuit
ratio of the ac collector current to the in-phase
component of the small-signal collector-emitter voltage with the base terminal open-circuited to ac. (real)
output admittance. (common-emitter) open-
The
"rb.
small-signal
h re
circuit reverse voltage
output voltage with the input open-circuited to
transfer ratio
(Ref MIL-S-19500D Par. 30.18)
ratio of the ac input voltage to the small-signal ac ac.
(common-base. common-emitter)
b.
current,
ic.
(base-terminal.
»E
collector-terminal.
dc
The value of the dc current indicated by the subscript.
into
the
terminal
emitter-terminal)
•b.
current,
rms value of
alternating
The root-mean-square value of into the terminal indicated by the
component
alternating current subscript.
(base-terminal, col lector-term inal,
emitter-terminal)
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1-19
GLOSSARY MULTIJUNCTION TRANSISTORS Definition
Term
Symbol
value of current into the
current, instantaneous
The instantaneous
total value
terminal indicated by the subscript.
total
(base-terminal,
'E
collector-terminal,
emitter-terminal)
MAXIMUM
-» ROOT-MEAN-SQUARE VALUE OF ALTERNATING CURRENT
i
I
(PEAK)
VALUE OF ALTERNATING COMPONENT -
-r I
ic
DC VALUE WITH I ALTERNATING
j DC VALUE NO ALTERNATING! COMPONENT
NO ALTERNATING COMPONENT
COMPONENT
T" _
IdRMSI BOOT-MEAN-SQUARE TOTAL VALUE
IdAVI
I
CM MAXIMUM (PEAK! TOTAL VALUE i
INSTANTANEOUS TOTAL VALUE
TIME WITH ALTERNATING
-~H-
COMPONENT
DIAGRAM ILLUSTRATING SYMBOLS AND TERMS FOR CURRENTS (Ref
'BEV
IEEE 255)
into the base terminal
when
is
base cutoff
The dc current
current, dc
biased in the reverse direction with respect to the emitter terminal and there is a specified voltage
it
between the collector and emitter terminals.
ICBO
current, dc,
into the collector terminal when it is biased in the reverse direction with respect to the
emitter open
base terminal
The dc current
collector cutoff
circuited. (Ref
1-20
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and the emitter terminal
IEEE 255)
is
open-
GLOSSARY MULTUUNCTION TRANSISTORS Symbol 'CEO-
Term collector cutoff
current, dc, with (base open.
Definition
\
The dc current
resistance
between
it is
biased in the reverse direction* with respect to the
emitter terminal and the base terminal
by the 'CER.
when
into the collector terminal
is
(as indicated
last subscript letter as follows)
O = open-circuited.
base and emitter.
R=
returned
to
the
emitter
through a
terminal
specified resistance.
ices.
base short-circuited
S = short-circuited to the emitter terminal.
to emitter.
V=
returned
to
the
emitter
terminal
through a
emitter
terminal
through a
specified voltage.
'CEV.
voltage between
X = returned
base and emitter.
•CEX
circuit
to
the
specified circuit.
(Ref IEEE 255)
between
*For these parameters, the collector terminal is considered to be biased in the reverse direction
base and emitter)
when
it
is
made
positive for N-P-N transistors or
negative for P-N-P transistors with respect to the
emitter terminal.
'E1E2(off|
emitter cutoff
The current
current
emitter
into the emitter-1 terminal of a double-
transistor
when the
emitter-1
terminal
is
biased with respect to the emitter-2 terminal and the transistor
is
in the off state (the collector-base
diode
not forward-biased) with specified termination of the collector and base terminals. is
EBO
emitter cutoff
The dc
current, dc,
biased in the reverse direction with respect to the
collector
EC(ofs)
open
when
current into the emitter terminal
base terminal
and the collector terminal
circuited. (Ref
IEEE 255)
emitter-collector
The
offset current
emitter and collector
external
current
short-circuit
when
is
it is
open-
between
the
the base-collector diode
is
reverse biased.
"ECS
emitter cutoff
The dc current
current, dc,
biased in the reverse direction* with respect to the
base short-circuited
collector
to collector
circuited to the collector terminal. (Ref
'For
into the emitter terminal
terminal
this
and the base terminal
parameter
the
considered to be biased
when
it
is
made
when
in
emitter
is
it is
short-
IEEE 255)
terminal
is
the reverse direction
positive for N-P-N transistors or
negative for P-N-P transistors with respect to the collector terminal.
See preferred symbol yj e (imag)
Im(yje)
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1-21
GLOSSARY MULTIJUNCTION TRANSISTORS Definition
Term
Symbol
See preferred symbol Voe(imag)
Im(Voe) noise current,
See page
1-3.
1-3.
equivalent input
NForNF*
noise figure, average or spot
See page
P|B.
large-signal input
The product of the
PIE
power (common-base, common-emitter)
voltage with the
small-signal input
The product of the
power (common-base, common-emitter)
voltage with the
Pib.
Pie
large-signal
POE
power (common-base, common-emitter) small-signal
Poe
power (common-base, common-emitter)
PT
rb'Cc
small-signal ac input current
common
and
reference terminal circuit
configuration.
The product of the
large-signal ac
common
voltage with the
output current and
reference terminal circuit
configuration.
The product of the
output
Pob.
and
reference terminal circuit
configuration.
output
POB-
large-signal ac input current
common
small-signal ac
common
voltage with the
output current and
reference terminal circuit
configuration.
total nonreactive
The sum of the products of the dc input currents and
power input to
voltages,
all
i.e.,
terminals
VBE'lB + VCE'lCor Vbe-'e + vcb-'c
collector-base
The product of the
time constant
collector
capacitance
intrinsic
under
base
resistance
specified
and
small-signal
conditions.
rCE(sat)
between the collector and emitter
saturation resistance
The
collector-to-emitter
terminals for the saturation conditions specified. (Ref
with the transistor in the indicated configuration. See page 1-4.
1-4.
+
See pages 1-5 and
tf.
tf.
See pages 1-5 and
V
rise
time
Seepages 1-5 and
1-6.
ts
storage time
Seepages 1-5 and
1-6.
t
pulse average time
Seepage
VBB.
supply voltage, dc
The dc supply
vc&
(base, collector.
to the reference terminal.
VEE
emitter)
Vbc. vbe. VCB. VCE. VEB-
voltage,
w
vec
1-6.
1-6.
1-6.
voltage applied to a circuit connected
The dc
dc or average
voltage between the terminal indicated by the subscript and the reference terminal (stated in terms of the polarity at the terminal indicated by the
(base-to-col lector.
first
base-to-emitter. collector-to-base.
first subscript).
collector-to-emitter.
emitter-to-base, emitter-to-collector)
vbc.
voltage, instantaneous
The instantaneous value of ac
Vbe.
value of alternating
terminal
vcb.
component
reference terminal.
vce.
(base-to-collector.
veb.
base-to-emitter.
vec
indicated
by the
voltage between the
first
subscript and the
collector-to-base,
collector-to-emitter,
emitter-to-base, emitter-to-collector)
V(BR)CBO (formerly BVcbo)
breakdown
The
voltage.
breakdown
voltage
between
the
collector
collector-to-base.
terminal and the base terminal
emitter open
terminal is biased in the reverse direction with respect to the base terminal and the emitter terminal is open-circuited. (Ref IEEE 255)
Texas INCORPORATED Instruments POST OFFICE BOX
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when the
collector
1-23
GLOSSARY MULTUUNCTION TRANSISTORS Definition
Term
Symbol
V(BR)CEO (formerly BVcEO)
breakdown voltage, collector-to-emitter with
\
(base open,
breakdown
The
between
voltage
terminal and the emitter terminal
terminal
biased
is
collector
the
when
the collector
the reverse direction* with
in
respect to the emitter terminal and the base terminal
V(BR)CER (formerly BVcER)
resistance
between
= open-circuited.
R=
V(BR)CES (fromerly BVcES*
base short-circuited
to
returned
through a
terminal
emitter
the
specified resistance.
S=
to emitter,
V V(BR)CEV (formerly BVcEV)
last subscript letter as follows):
by the
(as indicated
is
base and emitter,
short-circuited to the emitter terminal.
= returned
voltage between
the
to
emitter
terminal
through a
emitter
terminal
through a
specified voltage.
base and emitter,
X=
the
to
returned
specified circuit.
V(BR)CEX (formerly BVcEX)
circuit
between
(Ref IEEE 255)
base and emitter)
*For
parameters,
these
when
it
made
is
collector
the
considered to be biased
in
terminal
is
the reverse direction
positive for N-P-N transistors or
negative for P-N-P transistors with respect to the
emitter terminal.
V(BR)E1E2
breakdown
emitter-emitter
The
breakdown voltage
terminals,
of
voltage
specified termination
V(BR)EBO (formerly BVeBO>
breakdown
The breakdown
voltage,
between
double-emitter
a
the
emitter
transistor,
with
between collector and base.
voltage between the emitter and base
when the
emitter terminal
is
biased in the
emitter-to-base,
terminals
collector open
reverse direction with respect to the base terminal
and the collector terminal
is
open-circuited.
(Ref
IEEE 255)
V(BR)ECO (formerly BVeCQ)
breakdown
The breakdown
voltage,
voltage between the emitter and
terminals
when
the
emitter terminal
is
em itter-to-col lector,
collector
base open
biased in the reverse direction* with respect to the collector terminal and the base terminal is opencircuited.
*For
parameter
this
the
considered to be biased
when
it
is
made
in
emitter
terminal
is
the reverse direction
positive for N-P-N transistors or
negative for P-N-P transistors with respect to the collector terminal.
(floating potential)
dc open-circuit voltage (floating potential) between the terminal indicated by the first subscript
VEB(fl).
(collector-to-base.
and
VEC(fl)
col lector-to-emitter.
terminal
emitter-to-base.
to the reference terminal. (Ref IEEE 255)
v CB(fDVCE(fl).
The
dc open-circuit voltage
reference
the is
emitter-to-collector)
1-24
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terminal
when the remaining
biased in the reverse direction with respect
GLOSSARY MULTUUNCTION TRANSISTORS Symbol
Vcbo
VcE(ofs)
Term
Definition
voltage, dc, emitter
The dc voltage between the collector terminal and the base terminal when the emitter terminal is open-
open
circuited.
collector-to-base
collector-emitter
The open-circuit voltage between the
offset voltage
emitter terminals
when
collector and
the base-emitter diode
is
forward-biased.
VcE(sat)
saturation voltage,
The dc
collector-to-emitter
terminals for specified
voltage between the collector and the emitter saturation conditions. (Ref
IEEE 255)
VCEO.
collector-to-emitter voltage, dc, with
\
(base open,
VCER.
resistance
between
base and emitter,
The dc voltage between the emitter
terminal
indicated
by the
collector terminal
when the
last
base
and the
terminal
is
(as
subscript letter as follows):
= open circuited. R - returned to the emitter terminal through
a
specified resistance.
S = short-circuited to the emitter terminal.
VCES.
base short-circuited
V=
to emitter,
X= VCEV.
returned
to
the
emitter
terminal
through a
emitter
terminal
through a
specified voltage.
voltage between base
returned
to
the
specified circuit.
and emitter,
VCEX
circuit
between base
and emitter)
VEBO
emitter-to-base
The dc
voltage, dc,
base
collector
VEC(ofs)
open
voltage between the emitter terminal and the
terminal
with
the collector terminal
open-
circuited.
emitter-collector
The
offset voltage
collector
open-circuit voltage between the emitter and
when
the base-collector diode
is
forward-
biased.
|VE1E2(ofs)|
magnitude of the
The
emitter-emitter offset
between
voltage
transistor
absolute
value
of
the
open-circuit
voltage
two emitters of a double-emitter when the base-collector diode is forward-
the
biased.
|AVE1E2(ofs)lAI B
I^VE1E2(ofs)lAT A
magnitude of the change in offset
absolute
value
of
the
algebraic
difference
voltage with base
between the emitter-emitter offset voltages of a double-emitter transistor at two specified base
current
currents.
magnitude of the
The
change
between the emitter-emitter offset voltages of a
in offset
voltage with
Vn
The
absolute
value
of
the
algebraic
difference
temperature
double-emitter transistor at two specified ambient temperatures.
noise voltage,
Seepage
1-6.
equivalent input
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1-25
GLOSSARY MULTUUNCTION TRANSISTORS
reach-through (punch-through)
VRT
Definition
Term
Symbol voltage
That value of reverse collector-to-base voltage at which the space-charge region of the collector-base junction extends to the space-charge region of the emitter-base junction. (Ref
small-signal short-
Vfb.
circuit forward-
Vfe
IEEE 255)
ratio of rms output current to rms input voltage with the output short-circuited to ac.
The
transfer admittance
(common-base, common-emitter) small-signal short-
Vib.
circuit input
Vie
admittance
The
rms input current to rms input voltage
ratio of
with the output short-circuited to
ac.
(common-base, common-emitter)
Vie(imag) or Im(vje)
the small-signal
ratio of rms input current to the rms out-ofphase (imaginary) component of the input voltage
short-circuit input
with the output short-circuited to ac.
imaginary part of
The
admittance
(common-emitter)
Vie(real)
or Re(yje)
real part
of the
small-signal shortcircuit input
admittance
The
rms input current to the rms in-phase component of the input voltage with the
ratio of
(real)
output short-circuited to
ac.
(common-emitter)
Vob.
small-signal short-
Voe
circuit
output
The
ratio of
rms output current to rms output voltage
with the input short-circuited to
ac.
admittance
(common-base,
common-emitter)
Voe(imag) or
Im(yoe)
imaginary part of
The
the small-signal
(imaginary)
short-circuit
ratio of
rms output current to the out-of-phase
component of the rms output
with the input short-circuited to
output
voltage
ac.
admittance
(common-emitter)
Yoe(real)
or
Re(yoe)
real part
The ratio of rms output current to the in-phase (real) component of the rms output voltage with the input
of the
small-signal shortcircuit
short-circuited to ac.
output
admittance
(common-emitter)
Vrb-
small-signal short-
Yre
circuit reverse
ratio of rms input current to rms output voltage with the input short-circuited to ac.
The .
transfer admittance
(common-base, common-emitter)
1-26
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)
GLOSSARY UNIJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS Terms and Definitions Term 11356
'
B
Definition
A
region of a semiconductor device into which minority carriers are injected.
'
A region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.S1
emitter (E)*
junction, emitter
A
semiconductor
direction
to
junction
inject
normally
biased
forward
the
in
minority carriers into the base.
(Ref 60
IRE28.S1) peak point
The point on the
emitter current-voltage characteristic cor-
responding to the lowest current at which dVEBl/dlE = 0.
programmable unijunction
transistor
See page 1-16.
valley point
The point on the emitter
current-voltage characteristic corres-
ponding to the second lowest current at which dVEBl/dlE =
A
unijunction transistor
0.
three-terminal semiconductor device having one junction and a
stable negative-resistance characteristic over a
wide temperature
range.
Graphic symbols for unijunction transistors (Ref. AIMS Y32.2):
N-P (P-Type Base)
^ 2/P\ *
base 2
baSe1
baselU^
p-N (N-Type Base)
!
\L>'
NOTE:
In the graphic
optional
is
if
{T^««*
J
symbols, the envelope
no element
is
connected
to the envelope.
Letter Symbols, Terms,
and Definitions
Symbol V
'B2(mod)
'EB20
Term
Definition
intrinsic standoff
The
ratio
voltage drop of the emitter junction.
ratio
(Vp-VF)/VB2B1 where Vp .
is
the forward
interbase modulated
The current
current
current
emitter reverse
The current
current
biased in the reverse direction with respect to the base-2 terminal and the base-1 terminal is open-
is
into the base-2 terminal
when
the emitter
greater than the valley-point current.
into the
emitter terminal
when
it
is
circuited.
•P *
peak -point current
The emitter current
at the
peak point.
Reference to base and emitter symbolism (B, E) refers to the device terminals connected to those regions.
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GLOSSARY UNIJUNCTION TRANSISTORS Definition
Term
Symbol •v
valley-point current
rsB
interbase resistance
The emitter current The
resistance
at the valley point.
between the two bases with the
emitter current equal to zero.
Tj
junction temperature
See page
tp
pulse time
See pages 1-5 and
tw
pulse average time
See page 1-6.
V B 2B1
interbase voltage
The dc voltage between base 2 and base
emitter saturation
The forward voltage between the emitter and base
voltage
at
VEBI(sat)
1
-4.
1-6.
1
1
an emitter current greater than the valley-point
current.
VoBI
The peak voltage measured across the resistor in with base 1 when the device is operated
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GLOSSARY FIELD-EFFECT TRANSISTORS Letter Symbols, Terms,
and Definitions
Symbol
Term
bfs.
common-source
bis.
signal
k>os.
input, output, reverse
brs
transfer) susceptance
Cds
drain-source capacitance
small-
(forward transfer,
Definition
The imaginary
part of the corresponding admittance.
See yf s yj s y os and y re Symbols and Vxx(imag) are equivalent. ,
The
,
,
capacitance
.
between
the
in
the forms bx X
drain
and source
terminals with the gate terminal connected to the
guard terminal of a three-terminal bridge.
Cdu
drain-substrate
The capacitance between the
capacitance
terminals
with
the
gate
drain and
and
source
substrate
terminals
connected to the guard terminal of a three-terminal bridge.
short-circuit input
capacitance,
common-
source
Coss
The capacitance between the input terminals
(gate
and source) with the drain short-circuited to the source for alternating current. (Ref.
IEEE 255)
short-circuit
output
The capacitance between the output terminals
capacitance,
common-
and source) with the gate short-circuited to the
(drain
source
source for alternating current. (Ref. IEEE 255)
short-circuit reverse
The capacitance between
transfer capacitance,
the drain and gate terminals with the source connected to the guard terminal of a
common-source
three-terminal bridge.
ForF
noise figure, average or spot
Seepage
9fs.
common-source
9is.
signal (forward transfer,
Vfs. Vis. Vos.
9os.
input, output, reverse
Vxx(real) are equivalent.
9rs
transfer)
G P9G ps
G tg,
small-
The
1-3.
real part of the
corresponding admittance. See
and y rs Symbols .
in
the forms gxX and
conductance
small-signal insertion
power gain, (commongate, common-source)
The ratio, usually expressed in dB, of the signal power delivered to the load to the signal power delivered to the input.
Gts
power gain (commongate, common-source)
The ratio, usually expressed in dB, of the power delivered to the load to the maximum power available from the source.
•D
drain current, dc
The direct current
'D(off)
drain cutoff current
The
small-signal transducer
direct
signal
into the drain terminal.
current
depletion-type
signal
into
transistor
the drain terminal of a
with
a specified reverse gate-source voltage applied to bias the device to the off state.
Texas INCORPORATED Instruments POST OFFICE BOX SO 12
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GLOSSARY FIELD-EFFECT TRANSISTORS
'D(on)
Definition
Term
Symbol
direct current into the drain terminal with a
The
on-state drain current
specified forward gate-source voltage applied to bias
the device to the on state.
>DSS
zero-gate-voltage
The
drain current
gate-source voltage
direct current into the drain terminal is
zero. This
in a depletion-type device,
is
when
the
an on-state current
an off-state current
in
an
enhancement-type device.
lG
gate current, dc
The direct current
"GF
forward gate current
The
into the gate terminal.
>GR
The
reverse gate current
direct current
into the
reverse gate current,
The
drain short-circuited
junction-gate
to source
terminal
current
direct
VqsF-
gate terminal with a
reverse gate-source voltage applied. See
'GSS
with a
direct current into the gate terminal
forward gate-source voltage applied. See
Vqsr.
the gate terminal
into
transistor
field-effect
when
of a
the gate
reverse-biased with respect to the source
is
terminal and the drain terminal
is
short-circuited to
the source terminal.
'GSSF
the gate terminal of an
forward gate current,
The
drain short-circuited
insulated-gate field-effect transistor with a forward
to source
gate-source voltage applied and the drain terminal
direct current
into
short-circuited to the source terminal. See
•GSSR
an
reverse gate current,
The
drain short-circuited
insulated-gate field-effect transistor with
to source
gate-source voltage applied and the drain terminal
direct
current
into the gate terminal of
short-circuited to the source terminal. See
In
VqsF-
See page
noise current,
1
a
reverse
VqsR-
-3.
equivalent input
See preferred symbols: bf s or yf s (im a g).
Imtyfs).
bis or Vis(imag).
Im(yj s ),
b
Im(vos).
s
or Vos(imag).
brs ° r Vrs(imag)
ImWrs) IS
source current, dc
The
'S(off)
source cutoff current
The
direct current into the source terminal.
direct current
into
the source terminal of a
depletion-type transistor with a specified gate-drain voltage applied to bias the device to the off state.
'SDS
zero-gate-voltage
The
source current
gate-drain voltage in a
direct current into the source terminal is
zero. This
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the
an on-state current
depletion-type device, an off-state current in an
enhancement-type device.
1-32
is
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GLOSSARY FIELD-EFFECT TRANSISTORS Symbol
Term
Definition
NForNF*
noise figure, average or spot
r ds(on)
small-signal drain-
Seepage
1-3.
The
small-signal resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. For a
source on-state resistance
depletion-type device, this gate-source voltage
may be
zero.
The dc resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. For a depletion-
static drain-source
TJS(on)
on-state resistance
type device, this gate-source voltage Re(yfs),
See preferred symbols: gf s or
Re(vis), Sis
Re(yos).
may be
zero.
yfs(real).
or yj s (real),
9os or Vos(real). 9rs or Vrs(real)
Re(Vrs)
Rfl
thermal resistance
SfgOrS21g,
forward transmission coefficient
The
sfsOrs2i s
(common-gate, common-source)
coefficient
Seepages
1-2
and
respective
with
1-3.
forward the
or
reverse
transistor
in
transmission
the
indicated
configuration. See pages 1-3 and 1-4. «rg or s 12g,
reverse transmission coefficient
srsorsifc
(common-gate, common-source)
si
g
sj
s
ors 11g ors 11s
,
The
input reflection coefficient
(common-gate, common-source)
respective input or output reflection coefficient with the transistor in the indicated configuration. See
interval from a point 90 percent of the amplitude on the trailing edge of the input pulse to a point 90 percent of the maximum
maximum
amplitude on the
trailing edge of the output pulse. This corresponds to storage time for a multifunction transistor. See pages 1-5 and 1-6.
NOTE: This definition assumes a device initially in the off state with an input pulse applied of proper polarity to switch the device to the
•NF and NF
abbreviations are often used for sumbols F and F: however, the symbols
F*
SO 12
state.
and F are preferred.
TexasINCORPORATED Instruments POST OFFICE »OX
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GLOSSARY FIELD-EFFECT TRANSISTORS
td(on)
Definition
Term
Symbol
turn-on delay time
from a point 10 percent of the
The time
interval
maximum
amplitude on the leading edge of the input
to a point 10 percent of the maximum amplitude on the leading edge of the output pulse.
pulse
This corresponds to delay time for a multijunction
See pages 1-5 and 1-6. This definition assumes a device
transistor.
NOTE:
initially in
the off state with an input pulse applied of proper polarity to switch the device to the
See pages 1-5 and
time
fait
toff
turn-off time
The sum of
ton
turn-on time
The sum of td(on) + V- See pages
pulse time
See pages 1-5 and
1-6.
and
1 -6.
See pages
time
tr
rise
tw
pulse average time
V(BR)GSS
gate-source
breakdown
Seepage
1
td( ff)
-5
state.
1-6.
tf
*P
on
+
tf.
See pages 1-5 and
1-6.
1-5 and 1-6.
1-6.
voltage between the gate and source
The breakdown
terminals with the drain terminal short-circuited to
voltage
the source terminal.
NOTE: The symbol V(BR)GSS with
junction-gate
field-effect
is
primarily used
transistors.
The
symbols V(BR)GSSR <* V (BR)GSSF *° uld be used with insulated-gate transistors having shunting diodes or similar voltage-limiting devices.
V(BR)GSSF
The breakdown
breakdown voltage
terminals with a forward gate-source voltage applied and the drain terminal short-circuited to the source terminal. See
V(BR)GSSR
voltage between the gate and source
forward gate-source
VGSFvoltage between the gate and source
reverse gate-source
The breakdown
breakdown voltage
terminals with a reverse gate-source voltage applied
and the drain terminal short-circuited to the source terminal. See
voltage applied to a circuit connected
VDD. vgg. VSS
supply voltage, dc
The dc supply
(drain, gate,
to the reference terminal.
VDG
drain-gate voltage
The dc
VDS
drain-source voltage
The
source) voltage between the drain and gate terminals.
dc
voltage
terminals.
1-34
VGSR-
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between
the
drain
and source
GLOSSARY FIELD-EFFECT TRANSISTORS Symbol
VDS(on)
VDU vgs vgsf
Term drain-source on-state
Definition
The dc
voltage
between the drain and source terminals with a specified forward gate-source voltage applied to bias the device to the on state.
drain-substrate
The dc
voltage
terminals.
gate-source voltage
The dc voltage between the
forward gate-source
The dc voltage between the gate and source terminals of such polarity that an increase in its magnitude
voltage
voltage
voltage
between the drain and substrate
gate and source terminals.
causes the channel resistance to decrease.
vgsr
reverse gate-source
voltage
VGS
gate-source cutoff voltage
VGS(th)
gate-source threshold
voltage
VQU
gate-substrate voltage
The dc
voltage between the gate and source terminals of such polarity that an increase in its magnitude causes the channel resistance to increase.
The reverse gate-source voltage at which the magnitude of the drain current of a depletion-type field-effect transistor has been reduced to a specified low value. The
forward gate-source voltage at which the magnitude of the drain current of an enhancement-type field-effect transistor has been increased to a specified low value.
The dc
voltage
between the gate and substrate
terminals.
Vn
noise voltage,
See page 1-6.
equivalent input
VSU
yfs
source-substrate
The dc
voltage
terminals.
common-source
small-
signal short-circuit
forward transfer
voltage between the source and substrate
The ratio of rms drain current to rms gate-source voltage with the drain terminal ac short-circuited to the source terminal.
admittance
Yis
common-source
input admittance
The ratio of rms gate current to rms gate-source voltage with the drain terminal ac short-circuited to the source terminal.
common-source
The
small-
signal short-circuit
Vos
small-
signal short-circuit
output admittance
ratio of rms drain current to rms drain-source voltage with the gate terminal ac short-circuited to the source terminal.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
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GLOSSARY FIELD-EFFECT TRANSISTORS
Vrs
Definition
Term
Symbol common-source
small-
The
rms gate current to rms drain-source
ratio of
signal short-circuit
voltage with the gate terminal ac short-circuited to
reverse transfer
the source terminal.
admittance
Vfs(imag)> Vis(imag)'
small-
signal (forward transfer,
Vos(imag).
input, output, reverse
Vrs(imag)
transfer) susceptance
Vfs(real). Vis(real).
Vos(real)Vrs(real)
136
common-source
common-source
small-
part of the corresponding admittance. and Vrs- Symbols in the forms yos. vis, Yxx(imag) and b xx are equivalent.
The imaginary See yfs
The
,
real part
of the corresponding admittance. See forms y X x(real) Yrs- Symbols in the
an d
signal (forward transfer,
Yfs. ViS' Yos.
input, output, reverse
and g X x are equivalent.
transfer)
conductance
Instruments Texas INCORPORATED POST OFFICE BOX 9012
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A
A
STANDARDS SEMICONDUCTOR STANDARDS DOCUMENTS Following are sources of standards material relating to low-power transistors and diodes:
EIA and JEDEC Standards Electronic Industries Association
2001 Eye
St.
N.W.
Washington, D.C. 20006 Telephone: 202-659-2200 Registered Outlines and Gauges for Semiconductor
Oevices-JEDEC Publication No. 12
Preferred Lead Configurations for Field-Effect Transistors-JEDEC Publication No.
69A
JEDEC Recommendations
for Letter Symbols, Abbreviations, Terms, and Definitions for Semiconductor Device Data Sheets and Specifications-JEDEC Publication No. 77
Recommended
Practice for
Measurement of Transistor Lead Temperature-JEDEC Publication No. 84
Quality Program Requirements for Solid-State Device Manufacturers-JEDEC Publication No.
85
Standard Test Methods for Electronic Component Parts-EIA Standard RS-186-C Test Methods for the Collector-Base Time Constant and the Resistive Part of the Common-Emitter Input
Impedance-EIA Standard RS-284 Forward Transient Measurement on Semiconductor Diodes— EIA Standard RS-286
Measurement of Small-Signal HF, VHF, and
UHF
Power Gain of Transistors-EIA Standard RS-306
Voltage Regulator Diode Noise Voltage Measurement-El A Standard RS-307
Measurement of Transistor Noise Figure
at
MF
through
VHF-EIA Standard
RS-31
1
Measurement of Reverse Recovery Time for Semiconductor Diodes-EIA Standard RS-318 Characterization of a Reverse Recovery Test Fixture-El
A Standard
RS-31 8-1
Thermal Equilibrium Conditions for Measurement of Diode Static Parameters-EIA Standard RS-320
Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units Semiconductor Devices-El A Standard RS-321
The Measurement of
IC re l-EIA
in Multiple
Unit
Standard RS-340
The Measurement of Transistor Noise Figure Method-EIA Standard RS-353
at Frequencies
up to 20 kHz by Sinusoidal Signal-Generator
Measurement of Transistor Equivalent Noise Voltage and Equivalent Noise Current 20 kHz-EIA Standard RS-354
at
Frequencies up to
Designation System for Discrete Semiconductor Devices-EIA Standard RS-370
The Measurement of
Small-Signal
VHF-UHF
Transistor Short-Circuit Forward Current Transfer Ratio-El
A
Standard RS-371
The Measurement of
Small-Signal
VHF-UHF
Transistor Admittance Parameters-EIA Standard RS-372
Method of Diode "0." Measurement-EIA Standard RS-381 Measurement of Small Values of Transistor Capacitance-El A Standard RS-398
Method of Direct Measurement of Diode Stored Charge-JEDEC Suggested Standard No.
The Measurement of
Small-Signal Transistor Scattering
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Parameters-JEDEC Tentative Standard No. 10
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1-37
STANDARDS
International Electrotechnical
Commission
American National Standards 1430 Broadway
Institute, Inc.
(I
EC) Standards
New York, N.Y. 10018 Telephone: 212-868-1220 Publication 147:
Essential
of Ratings and Characteristics of Semiconductor Devices and General Principles
Measuring Methods.
— General and Terminology - Essential Ratings and Characteristics Part 2 — General Principles of Measuring Methods Part 3 - Reference Methods of Measurement Part
Part
1
Publication 148: Letter
Symbols for Semiconductor Devices and Integrated Microcircuits
Publication 191: Mechanical Standardization of Semiconductor Devices Military Standards
Commanding
Officer
U.S. Naval Publications and
Forms Center
5801 Tabor Avenue Philadelphia, Pa.
19120
MIL-S-19500: Semiconductor Devices, General Specification for
Ml L-STD-1 05: Sampling Procedures and Tables for Inspection by Attributes Ml L-STD-202: Test Methods for Electronic and Electrical Component Parts
MIL-STD-750: Test Methods for Semiconductor Devices
MIL-STD-883: Test Methods and Procedures for Microelectronics
i.38 1
*"*
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Transistor Selection
Guides
TRANSISTOR SELECTION GUIDES These guides are arrayed into families according to transistor structure and applications. These families
the usual manner of increasing type number, which would
inherent utility, but rather are ranked by the most-significant electrical characteristic of that family. Where more than one transistor type having the identical primary characteristic, the types within that group are
little is
further ranked by a secondary characteristic, and so on.
This form of organization works most efficiently lay-out,
It
but should not present undue
difficulties
when the
if it
user's selection criteria coincides
with the organizational
does not.
should be noted that the entries are nonexclusive; that
is
a transistor type
may
appear
in
more than one family
specifications so dictate.
Grown-junction transistors and certain other types not recommended for new design do not appear
in
these guides.
if its
TRANSISTOR SELECTION GUIDES N-P-N
LOW-LEVEL AMPLIFIERS NOISE FIGURE
v (BR)CEO
"FE
®'c
MIN-MAX
f e>f
MIN
DEVICE TYPE
(NOISE BW)
F
MAX mA 10 mA 10mA 10 mA 10 mA 10 «A 10 mA 10 mA 10 hA
250-500
IOjiA
400-800
10
100
V
30-
30
30-
30 V
30-
45 V
40-120
V 60 V 45 V 60V 45 V 60V 60 V 50V 50V 30 V 30 V 30 V 50V
15V 1BV 20 V 20 V 20 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V 25 V
mA 50 mA 50 mA 50 mA 50 mA mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA 10 mA 10 mA 10 mA 50 mA 50 mA 2 mA 2 mA 10 mA 10 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 150 mA 150 mA 150 mA 150 mA 150 mA
mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 10 mA 10 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 150 mA 150 mA 150 mA 150 mA 160 mA 150 mA 150 mA 150 mA 150 mA 150 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
O.3V0 1HTmA 0.3 V 160 mA 0.3 V 160 mA 0.45 V 0150 mA 0.45 V 0150 mA 0.45 V 0150 mA 0.45 V 0150 mA 0.4 V 150 mA 0.4 V 150 mA 0.4 V 160 mA 0.4 V 0150 mA 0.4 V 150 mA 0.4 V 160 mA 0.4 V 0150 mA 0.4 V 150 mA 0.4 V 150 mA 0.65 V 500 mA 0.72 V 500 mA 0.66 V 500 mA 0.72 V 500 mA 0.42 V 500 mA 0.52 V 600 mA 0.62 V 500 mA 0.42 V 500 mA 0.52 V 500 mA
mA mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 30 mA 30 mA 30 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA
26 typ ns
82 typ
26 typ ns
82 typ ns
V 40 V 60 V 40 V 40 V 40 V 40 V 30 V 30 V
26 typ ns
82 typ ns
25
26 typ ns
82 typ ns
ns
ns
60
V
25
ns
65
60
ns
75 ns
60
ns
35
ns
255 ns
35
ns
255 ns
V 20 V 12V 12V 40 V 40 V
35
ns
255 ns
40 V
35
ns
255 ns
40 V
45 ns
140 ns
40 V
45 ns
100 ns
40 V
45 ns
100 ns
45 ns
100 ns
60 V 40 V
45 ns
100 ns
40 V
45
ns
100 ns
60 V
45 ns
100 ns
40 V
45
ns
100 ns
60 V
45
ns
100 ns
40 V
45
ns
100 ns
40 V
45 ns
100 ns
60 V
50 ns
110 ns
40 V
50 ns
110 ns
60 V
150mA
50 ns
110 ns
40 V
mA 150 mA 150 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 300 mA 500 mA
50 ns
110 ns
60
150
90
ns
ns
25
ns
100 ns
40 ns
100 ns
40
ns
100 ns
40
ns
100 ns
40 ns
100 ns
40 ns 40 ns 40 ns
100 ns 100 ns
V 35 V 35 V 45 V 60 V 45 V 60 V 45 V 60 V 45 V 60 V
75 ns
170 ns
25 V
75
ns
170 ns
40
ns
19 typ ns
80 typ
ns
19 typ ns
80 typ
ns
40
100 ns
90
ns
25
V
40 V
mA 10 mA 10 mA 10 mA 10 mA 10 mA 0.4 V ® 50 mA 0.4 V ® 50 mA 0.4 V ® 50 mA 0.4 V & 50 mA 0.18 V® 30 mA 0.2 V ® 30 mA 0.2 V ® 30 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V ® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 0.4 V® 150 mA 1.5V® 150 mA 1.5 V® 150 mA V ® 300 mA V @ 300 mA V ® 300 mA V ® 300 mA V ® 300 mA V ® 300 mA V @ 300 mA V ® 300 mA V @ 300 mA 1 V ® 300 mA 0.5 V ® 500 mA V® 0.25 V ® 0.25 V ® 0.25 V ® 0.25 V ® 0.25 V ® 0.25
MAX 25 n 25 n 25 n 25 n 25 n 30n 30 n 30 n 40 n 40 n 40 n 40 n 40 n
MIN-MAX 4-10 V 4-10 V 4-10 V 4-10 V 4-10 V 4-10 V
MIN
MIN-MAX
son eon eon eon eon eon eon eon so n
n too n ioo n 200 n 210 n 220 n 250 n 250 n ioo
30
30 V 30 V 40 V 40 V
40 V 40 V 40 V 30 V 30 V 30 V 40 V 40 V 40 V
4-10V
V V 2-6 V 6-10
2-6
2-6
V
V
V 2-6 V 2-7 V 0.8-4 V 0.8-4 V 0.8-4 V 0.8-4 V 0.8-4 V 2-5 V 2-5 V 1-5 V 0.5-3 V 0.5-3 V 2-6 V 3-7 V 2.5-6 V 2-6
30 V 30 V 30 V
40
V
40 V 40 V 40 V 40 V 40 V 40 V 40 V 30 V 30 V
30 V
4-6V
50 V |
50V
mA mA 50mA 50mA 50mA 50-1 50 mA 50-1 50 mA 30mA 20-100 mA 20-100 mA 20-100 mA 20-100 mA 20-1 00 mA 15mA 8-80 mA 8-80 mA 8-80 mA 8-80 mA 8-80 mA 25-75 mA 25-75 mA 8mA 5-30 mA 5-30 mA 10-60 mA 12-18 mA 10-15 mA 2mA 12-24 mA 12-24 mA
Texas INCORPORATED Instruments POST OPPICK SOX B012
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TO-76 TO-76
MP94 MP94
TRANSISTOR SELECTION GUIDES UNIJUNCTION, CONVENTIONAL n
"P
MIN-MAX
MAX
BB MIN
0.47-0.62
6flA
0.47-0.62
25 mA
0.47-0.62 0.47-0.80
25 mA 25 mA
0.51-0.62
6 mA
0.51-0.62
6»iA
0.51-0.62
12 ^A
0.51-0.62
12/iA
0.51-0.62
12 mA
0.51-0.62
12
0.51-0.69
mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 4 mA 4 mA 2 mA 2 mA 2 mA 2 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 4 mA 2 mA 8 mA 8 mA 8 mA 8 mA 1 mA 4 mA 6 mA 2 mA 2 mA 8
25uA@10kn 50mA@ lOkfi 50 mA @ 10 kn 50 mA @ 10 kn ia
10
M@
TO-92
CHIP
AAA
U41 U41 U41
2N6117 A5T6117
TO-18
U41
AAA
U41
A7T6027 2N6116 A5T6116
TO-92
U41
2N6118 A5T6118
kn 70 ma @ 10 kn 70pA@ 10 kn 70 10 kn 50 mA
PACKAGE*
TO-18
TO-18
U41
AAA
U41
'See package drawings on page 2-20.
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TRANSISTOR SELECTION GUIDES PACKAGE DRAWINGS
u TO-5
TO-18
TO-39
TO-71
TO-72
TO-76
TO-46
TO-52
SHORT CAN VERSION
AAA
TO-116
2-20
OF TO-78
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OOO
B Transistor Interchangeability
a
TRANSISTOR INTERCHANGEABILITY These
of low-power (generally one watt or
lists
design engineer in determining the is
a
summary of the
These
recommended
significant ratings
and
are extensive (approximately
lists
less
of
power
dissipation in free-air) transistors are designed to assist the
when only
Tl replacement
the device type
number
is
known. Also included
electrical characteristics of the referenced types.
4600
entries) but
JEDEC
not definitive.
An
attempt was made to include
all
current and
and nonregistered. Undoubtedly there are some inadvertent omissions. Purposely omitted are the European PROELECTRON types, Japanese 2S types, and "hobbyist" types. recently obsolete domestic types, both
registered
Careful engineering judgement has been used to provide the final application
recommended
on the
specifications alone;
in selecting a
replacement except
Tl replacement based
might dictate another choice. Equally careful judgement should be used
where the recommended replacement type number coincides with the referenced type. In
most
cases, the
recommended replacement
has the same general package as the referenced type; that
is,
plastic for plastic
and metal for metal. For plastic-encapsulated devices, the "recommended" replacement has the same or similar terminal assignments as the referenced type although this terminal assignment may not be truly preferred. The user may consider this.
ORGANIZATION These interchangeability
lists
are divided into six broad classes as follows:
Master List of Registered Types
The
3-1
Master List of Nonregistered Types
3-63
Registered Field-Effect Transistors
3-92
Nonregistered Field-Effect Transistors
3-104
Registered Unijunction Transistors
3-115
Nonregistered Unijunction Transistors
3-117
Field-Effect Transistor and Unijunction Transistor
lists
are subsets of the appropriate Master List, either registered
or nonregistered.
Every effort has been made to ensure the accuracy of each entry. However, Tl makes no warranty as to the information furnished and the user assumes
all
risk in
the use thereof.
KEY TO MANUFACTURER CODES CR —
Crystallonics Division, Teledyne Incorporated
— Fairchild Semiconductor Corporation GE - General Electric Company Gl - General Instrument Corporation IN — Intersil, Incorporated F
M - Motorola Semiconductor Products NA — National Semiconductor Corporation RC - RCA Corporation SI - Siliconix, Incorporated Tl — Texas Instruments Incorporated
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS
. TTM
NUMKR
s y
e 3 8
n
BJCTMCAL CHARACTBUSTICS
'T
MPUCEMMT Ot NEAREST
QUVAUNT
*CBO
(mW)
(V)
(V)
MW
*TC-25' C ,
|
MAX •
•f.
vCE(«ri)
•w
v«o
TA -25''C
"C
MAX •
(mA) (V)
• tc
IT
MM
(mA)
2N117 2N118 2N118A 2N119
NPN NPN NPN NPN
GP GP GP GP
2N117 2N11S 2N118A 2N119
150 150 150 150
30 30 45 30
2N120 2N160 2N160A
NPN NPN NPN NPN
GP GP GP GP
2N120 2N2217 2N2217 2N2217
150 150 150 150
45 40 40 40
76-333
NPN NPN NPN NPN
GP GP GP GP
2N2217 2N221S 2N2218 2N2218
150 150 150 150
40
19-39
40 40
19-199
40
39-199
2N163A 2N243 2N244 2N25S
NPN NPN NPN
2N2218 2N243 2N244 2N2906
150 750 750 250
40 60 60
39-199
PNP
GP GP GP GP
30
30
15
2N2J9 2N260 2N260A
PNP PNP PNP PNP
GP GP GP GP
2N2906 2N2906 2N2906 2N2906
250 200 200 200
30 10 30 75
30
32
2N262 2N262A 2N263 2N264
PNP PNP
NPN NPN
GP GP GP GP
2N2904 2N2906 2N2218 2N2217
200 200 150
2N327 2N327A 2N327R 2N32S
PNP PNP PNP PNP
GP GP GP GP
2N2904 2N2904 2N2904 2N2904
2N328A 2N32S1 2N329 2N329A
PNP PNP PNP PNP
GP GP GP GP
2N329B 2N330 2N330A 2N332
PNP PNP PNP
NPN
GP GP GP GP
2N2906 2N2906 2N332
2N332A 2N333 2N333A 2N334
NPN NPN NPN NPN
GP GP GP GP
2N332A 2N333 2N333A 2N334
2N16I
2N161A 2N162
2NH2A 2N163
2N26I
9-1 9
9-19
g
19-39
19-199
10
30 45 45
30 30
45-150 20-55
10
1.5
10
1.5
350 385 385 350
50 50 50
40 40
9-22
3
.3
9-22
3
2N2904 2N2904 2N2904 2N2904
385 385 350 385
50 50 30 50
35 35
18-44 18-44
30
2N2KM
385 350 385 150
50 45 50 45
30
500
45 45 45 45
150
10 10
39 9
.3
5 5
18
3
.5
10
3
.5
10
3648
3
.6
15
3648
3
.6
15
35
150
500 150
•
36
9
30
45
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5
1
5
3-1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM Tl
TYPI
e
g
NUMBER
I
REPLACEMENT OR NEAREST EQUIVALENT
VCBO
VCEO
(mW)
(V)
(V)
45 40 45 45
45 60
TA -2S»C
MM
MIN
(MHi)
5
«0 45 45 45
60
1
5
1
5
1W
45 45 45 55
30 30 30 55
1W 1W 1W 1W
60 85 85 125
60
25
10
85 85
25
10
1W 1W 1W
125 60 85 85
125
25
10
60 60 65 25
60 60 65
GP GP GP GP
2N335A 2N336 2N336A 2N337
500
2N336A 2N337
NPN NPN NPN NPN
2N337A 2N33S 2N338A 2N339
NPN NPN NPN NPN
GP GP OP GP
2N337 2N33S 2N338A 2N339
500
2N339A 2N340 2N340A
NPN NPN NPN NPN
GP GP GP GP
2N339 2N340 2N340
NPN NPN NPN NPN
GP GP GP GP
2N341A 2N342 2N342A 2N3428
2N343 2N343A 2N343B 2N354
NPN NPN NPN
GP GP GP GP
2N343 2N343 2N343 2N2906
750 150
2N355 2N470
PNP
2N471A
NPN NPN NPN
GP GP GP GP
2N2906 2N2217 2N2217 2N2217
150 200 200 200
2N472 2N472A 2N473 2N474
NPN NPN NPN NPN
GP GP GP GP
2N2217 2N2217 2N2217 2N2217
2N474A 2N475 2N475A 2N476
NPN NPN NPN NPN
GP GP GP GP
2N477 2N478 2N479 2N479A
NPN NPN NPN NPN
GP GP GP GP
2N471
lc
1mA)
(V)
1
2N335I 2N336
PNP
MAX •
45
500 500
2N342A 2N3428
*C
(mA)
5 5
2N334A 2N334A 2N335 2N335A
2N342
MAX O
»T
kHz
1
GP GP GP GP
2N341
•
VcE(tot) 1
MIN
•tc-m"c
NPN NPN NPN NPN
2N34U
hf.
hfE
2N334A 2N334B 2N335 2N335A
2N341
3-2
I
ELECTRICAL CHARACTERISTICS
RATINGS
PT
150 500
150
500 125
.
125
500
750
1W 1W
45 30
1
20-55
20-55
10
45-150 45-150
10
19
39
10
85
60 85 85
10
9
28 9 .15
5 5 5 5
15
1.5
30 30
30 30
1
200 200 200 200
45 45
45 45
1.5
15
15
1.5
5
30
30
1.5
5
2N2217 2N2217 2N2217 2N2217
200 200 200 200
30 45 45
30 45 45
1.5
15
15
1.5
5
2N2217 2N221S 2N2217 2N2217
200 200 200 200
30
30
1.5
15
15
1.5
5 5
30 30
30 30
1.5
Instruments Texas INCORPORATED •
37
10
15
POST OFFICE BOX S012
18
DALLAS. TEXAS 75222
1
1
1
1
1
5
5
5 5 5
5 5
9 10
10 10
8 8 8
10 10 20 20
8 8
20 20 20 30
8 8
30 40 40 40
8 8
8 12 12
20
20 20
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM
RATINGS
ELECTRICAL CHARACTERISTICS
1*
*T
Tl
REPLACEMENT
OtMAMST MUVAUNT
NUMBER
s
2N480 2N480A 2N4B9 2N489A
NPN NPN
OP GP
P-N
UJ
P-N
UJ
2N4S9B 2N490 2N49QA 2N490B
P-N
UJ
P-N
UJ
P-N
UJ
P-N
2N491
2N491A 2N491B 2N492
veto
(mW)
(V)
(V)
200 200
45 45
•
»T
1 ktfa
MM
•TC -2»°C
!
vCI(iat)
•w
Vco
U-2S-C
MAX *
lc
1mA)
2N2217 2N2217 2N4I9 2N489A
SK UNUUNCTK3N INTERCHANGEAMUTY UST SK UNIJUNCTION INTERCHANOEANUTY UST
UJ
2N489B 2N490 2N490A 2N490B
UNUUNCTION SH UNUUNCTION SEE UNUUNCTION SEE UNUUNCTION
P-N
UJ
2N491
SH UNUUNCTION
P-N
UJ
P-N
UJ
P-N
UJ
2N491A 2N491B 2N492
P-N
UJ
P-N
UJ
P-N P-N
45 45
MM
MAX IV)
1.5 1
(mA) 5 5
tVUN
(MH>)
40 40
20 20
i
SEE
INTEItCHANGEAMUTY
LIST
tNTERCHANGEAMUTY 1ST INTERCHANGEAMUTY UST
WTERCHANGEAMUTY UST i
INTERCHANOEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY
UST UST UST UST
i
2N492A 2N492B 2N493 2N493A 2N493B 2N494 2N494A 2N494B n
1
SK UNUUNCTION
UJ UJ
2N492A 2N492B 2N493 2N493A
INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNIJUNCTION tNTERCHANGEAMUTY SEE UNIJUNCTION INTERCHANGEAMUTY
UST UST UST UST
P-N
UJ
2N493B
P-N
UJ
UNUUNCTION SEE UNUUNCTION SK UNUUNCTION SK UNUUNCTION
INTERCHANGEAMUTY UST INTERCHANGEAMUTY UST
1
P-N
UJ
P-N
UJ
P-N
UJ
PNP PNP
sw sw
NPN
GP
2N2944 2N2944 2N2102
2N541
NPN NPN NPN NPN
GP GP GP GP
2N54IA 2N542 2N542A 2N543
NPN NPN NPN NPN
2N543A 2NS45 2N546 2N547 2N548 2N549 2N550
n iili nn
2N497A 2N498 2N498A
2NS51
SEE
INTERCHANGEABILITY UST
INTERCHANGEAMUTY UST
SEE UNUUNCTION INTERO ANGEAMUTY LIST 150 25 150 10 15-
15 15
•4W
60
60
12-36
2N2102 2N3036 2N3036 2N2218
•5W •4W •5W
60 100 100 15
60
12-36
200
100 100
12-36
200 200
GP GP GP GP
2N221S 2N2219 2N2219 2N2218
200 200 200 200
15
15
30 30 50
30 50
NPN NPN NPN NPN
GP GP GP GP
2N2218 2N2102 2N2102 2N2102
•5W •5W *5W
45 60 30 60
45 60 30 60
NPN NPN NPN NPN
GP GP GP GP
2N2102 2N2270 2N2270 2N2270
*5W •5W •SW •5W
30 60 30 60
30 60 30 60
200
200
12-36
5
9
7.2
1.5
5
SO
10
5
80 80 80 80
8 10 10 10
80
10
200
1
1.5 1
80-
1
1.5
1
1540 15-80
20-80
2040 2040 20-80 20-80
Texas INCORPORATED Instruments POST OFFICE BOX 5012
.15
DALLAS. TEXAS 75222
500 500 500
5 3
500 200 200 50
3
5
4 4 2
5 5 5 5 500 500 500
500 200 200 50
4 4 4 4 3
3-3
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM
£
s
NUMMR
1
3-4
1 ^
REPLACEMENT Oft NEAREST EQUIVALENT
A -2S°C
T
1
MM MAX • (V)
(V)
8
200 200 150
1.5
150
1.5
150 150
15
40 40
150 150 150 150
1.5
5
150 150 150 150
25 15 35
40 50 40 50
5
•4W •5W
30-90
200 200
30-90
GP GP
2N657 2N6S7A 2N696 2N696A
NPN NPN NPN NPN
OP GP GP GP
2N3036 2N3036 2N696 2N696
•4W •5W
100 100
100 100
600 800
60 60
35
2040 2040
2N697 2N697A 2N698 2N699
NPN NPN NPN NPN
GP GP GP GP
2N697 2N697 2N698 2N699
600 800 800 400
60 60 120 120
35
40-120 40-120
2N699A 2N699B 2N702 2N703
NPN NPN NPN NPN
OP GP GP GP
2N699 2N699 2N2220
800 870 300 300
120 120 25 25
2N706 2N706A 2N706S 2N706C
NPN NPN NPN NPN
SW SW SW SW
300 300 300 360
25 25 25 40
2N707 2N707A 2N708 2N708A
NPN NPN NPN NPN
RF
300 500 360 360
56 70 40 50
2N709 2N709A 2N715 2N716
NPN NPN NPN NPN
SW SW
15
6
20-120
15
6
30-90
2N4S75 2N4875
50 70
35
10-50
RF
300 300 500 500
40
10-50
2N717 2N718 2N71SA 2N719
NPN NPN NPN NPN
GP GP GP GP
2N717 2N71S 2N718A 2N719
400 400 500 400
60 60 75 120
2N719A 2N720 2N720A
NPN NPN NPN
2N719A 2N720 2N720A
2N721
PNP
GP GP GP GP
500 400 500 400
120 120 120 50
2N721
.3
3648
2N2432 2N3036 2N3036
RF
.4
30 30 60 60
NPN NPN NPN NPN
GP
2N622 2N656 2N656A
SW SW
3
10 8 8
50 SO 60 60
2N62I
175
RF
50
18-44
500 175
2N2221
2 .5
30 60 50 50
50 100 5 5
•5W
175 385
20-
9-22
30-90
30-90
2040 40-120 40-120 40-120
25 25
2040 40-100 20-
2040 2040 2040
40
*
1.5
1.2
5
150
1.2
50
.5
10 10
.5
.15
70 300 300
.3
3
.3
3
1.2
15 15
600 800 70 70
150 150 150 150
40 50 60 40
A
9-
10
.6
9-50
10 10 10
.6
2040
2040 2040 40-120 40-120 20-45
DALLAS, TSXAS 75212
70
10 10 10 10
.6
.4
40-120 40-120
50 60 70
200 200 200 200
.6
10 10 15 15
35 35
10 10 10 10
10 10 10
Instruments Texas INCORPORATED POST OFFICE SOX S013
150 150 10 10
.5
10
30-120 40-120
MM
MM
00
20-80
GP GP GP GP
"C
1MH.)
30 60 40 35
NPN NPN NPN NPN
MAX •
kHz
(mA)
(mA)
2N552 2N560 2N6I9 2N620
SW
>C
r
•
VdO *CW
C
(mW) 2N2270 2N1893
vCE(irf)
hff
•TC -2S
CHARACTERISTICS •*.
*T
TI
TYPE
EUCmlCM
RATINGS
.4
1.2
150 150 150 150
1.5
150 150 150 150
1.2
50
15
5
150 150 150
35 30
1.5 1.5
5
5 1.5
30 15
15
40 50 50 50
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYPE
£
NUMBER
s
I
Tl
s
REPLACEMENT OR NEAREST EQUIVALENT
*
PNP PNP PNP PNP
GP OP GP
2N727 2N728 2N729 2N730
PNP
SW
NPN NPN NPN NPN NPN NPN NPN
2N731
2N734 2N734A 2N735
2N735A 2N736 2N736A 2N736B
SW
ELECTRICAL CHARACTERISTICS hf.
fE
^-as^c
VCBO
2N721
2N722 2N722 2N726
1
MIN
(mW|
500 400 500 300
50 50 50 25
20
MAX •
(V)
*C
(mA) 20-45 30-90 30-90 15-45
300
25
20
GP GP GP
2N727 2N2217 2N2217 2N730
•4W •4W
15
15
30 60
30
500
GP GP GP GP
2N731 2N2221 2N2221 2N956
500 500 500 500
60 80 80 80
60 60 60
30-100 30-100 60-200 60-200 60-200
30-120 20-200 20-200 20-60
40-120 15-50 15-50
150 150 150 10
MAX * (V)
.5
1.5 .5
.6
10
.6
10 10
.7
150
1.5
150 5 5 5
1.5
5
.5
5
1
.7
1
.5 1
NPN NPN NPN NPN
GP GP GP GP
2N956 2N956 2N956 2N956
500 500 500 500
80 80 80 80
60 60 60 60
2N738 2N738A 2N739 2N739A
NPN NPN NPN NPN
GP GP GP GP
2N719 2N719 2N720 2N720
500 500 500 500
125 125 125 125
80 80 80 80
2N740 2N740A 2N742 2N742A
NPN NPN NPN NPN
GP GP
2N871 2N871
125 125
SW SW
2N2217 2N2217
500 500 500 500
80 80 60 60
25-
5 10
25-
10
2N743 2N743A 2N744 2N744A
NPN NPN NPN NPN
SW SW SW SW
300 3*0 300 360
20 40 20 40
12
20-60
15 12 15
20-60 40-120 40-120
10 10 10 10
2N745 2N746 2N747 2N748
NPN NPN NPN NPN
GP GP
SW SW
2N337 2N338 2N337A 2N337A
150 150 200 200
45 45 25 30
30 30 25 30
20-55 45-150 30-90 20-40
10 10 10 10
GP GP
2N696 2N697
45 20 25 85
25 20
15-55
30-150
15
40-120
10 10 10
45
40-
1
1.2
20-80 20-80
5 5
.8
2N749 2N751
2N753 2N752 2N754 2N755 2N756 2N756A
NPN NPN NPN NPN
NPN NPN NPN NPN
GP
2N2221
200 200 300 500
GP GP GP GP
2N1893 2N1893 2N2220 2N2220
300 300 500 500
SW
•
VCE(M»J
VCEO
•TC = 2S°C
5
2N721A 2N722 2N722A 2N726
RATINGS
""T
60 60
60 100
45 60
15-50 15-50
30-100
30-100
60-200 60-200
45 60
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
5 5 5 5 5 5
.6 .5
!<;
10 10 10 150
150 10 10 10 10 10 10 10
1
10 10 10
.5
10
.5
.5
10 10
.5
10
1
.5
MM
(mAI 150 150 150 10
5
.35
10
.35
10
f|
kHz
MM (MHz)
15
25 25
50 60 60
15
140
30
140 100 too
40 25 20 20
B
30
40 40 80 80 80
60 100 too
20 20 40 40
60
80 80
100
30
200 500 300 500 19
39 .6 .5
5 5
30 10 .6
10 15
1
10 10 10
1
10
.8
40
200 200 30 30
12 12
3-5
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
, TYN NUMBBt
|
•f.
•"r
Tl
REPLACEMENT OR NEAREST EQUIVALENT
VCE
•w r
VCK>
VCEO
(mW)
(V)
(V)
A -2s°c
•
•at) 1
MAX •
MIN
•TC -25°C
MAX •
"C
(mA)
*C
*r
kHz
MM
MIN
(MHz)
(mA)
(V)
10 10 10 10
18
2N757 2N757A 2N758 2N758A
NPN NPN NPN NPN
GP GP GP GP
2N2221 2N2221 2N2221 2N2221
500 500 500 500
45 60 45 60
45 60 45 60
2N7588 2N759 2N759A 2N759B
NPN NPN NPN NPN
GP GP GP GP
2N2221 2N2222 2N2222 2N2222
500 500 500 500
60 45 60 60
60 45 60 60
2N760 2N760A 2N760B
NPN NPN NPN NPN
GP GP GP GP
2N2222 2N2222 2N2222 2N2218A
500 500 500 500
45 60 60 50
45 60 60 30
20-55
GP
2N2218A
500 150 150 150
50 20 20
30
45-150
10
15
12-60
.25
15
30-150
20 20
2N772
NPN NPN NPN NPN
25
25
20-
10
2N773 2N774 2N775 2N776
NPN NPN NPN NPN
GP GP GP GP
150 150
20 20 20 20
15
4-16
1.5
6
15
7-30
1.5
11
15 15
20-80
1.5
4-16
1.5
28 6
2N777 2N77S 2N780 2N7S3
NPN NPN NPN NPN
GP GP GP
150 150
15 15
7-30
1.5
11
20-80
1.5
28
SW
300
20 20 45 40
2N784 2N784A 2N789 2N790
NPN NPN NPN NPN
SW SW
300 350 150 150
30 40 45 45
2N791
2N792 2N793 2NS34
NPN NPN NPN NPN
GP GP GP
150 150 150 300
45 45 45 40
2NS34A 2N835 2N839 2NS40
NPN NPN NPN NPN
SW SW GP GP
2N2222 2N2221A
360 300 300 300
40 25 45 45
2N841 2N842
NPN NPN NPN NPN
GP GP GP GP
2N2222A
300 300 300 300
45 45 45 60
2N761
2N762 2N770 2N771
2N843 2N844
3-6
| 1 u
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
1
SW SW SW
150 150
2N2220
GP OP
SW
2N2221 2N2222
2N718A
•IW
1 1
1 1
12-
1 1
25-
•
.5
1
39
.25
10 10 10
.25
10
.5
35-140
.5
'
1
1
20-60
10
.25
25-
10 10
.19
25-150
.65
30 30
1
30 30 30
1
1
1 1
25-
10
.25
25-
10 10 10 10
.25
20 45 45
20-
45 45 45
60-400 20-55 45-150 40-120
15-50
30-100
DALLAS, TEXAS 78222
18
36 36 36 76 76 76
1
10
18
10 10 10 10
1
Instruments Texas INCORPORATED POST OFFICE BOX 9012
10 10 10 10
.5
1
18
.3
2
2
10 10 10
1.2
5
.8
2
1.2
19
75 100 75
10 10
60 200
10 100 5 5
200 300 18
5 5
18
5 10
76
10 10 10 10 10 10 10 10
350
20 40 80 20 40
500 300 30 30
40 30
40 50
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS TYPE
NUMBHI
P
S 5
£
EUCIMCAL CHARACTUSTKS
*t
Tl
REP1ACEMMT
OtWAKST
TA
vcao
Sb
VCE(*all
•w
-M°C
•
VCEO 1
EQUIVALENT
MM
•TC -as°c
1
(n>W)
(V)
300 200 200 300
100
20 40 25
25
NPN NPN NPN NPN
SW SW SW
2N850
SW SW SW
2N850
2N851 2N852
NPN NPN NPN
2N851 2N852
300 300 300
25 20 20
12
2N8S8
PNP
CP
2N2906
150
40
2N859 2N860
GP GP GP GP
2N2906 2N2906 2N2906 2N2906
150 150 150 150
40 25
2N862
PNP PNP PNP PNP
2N863 2N864 2N864A 2N865
PNP PNP PNP PNP
GP GP GP GP
2N2906 2N2906 2N2906 2N2906
150 150 300 150
PNP
GP GP GP GP
2N2906
2N2906
300 500 500 360
30 30 25
NPN NPN NPN
GP GP GP GP
2N2906 2N870 2N871 2N2221
340 500 500 150
25 100 100 45
30
NPN NPN NPN NPN
GP GP GP GP
2N2221 2N2221 2N2221 2N2221
150 150 150 150
45 45 45 45
30 30 30 30
2N907 2N908 2N909 2N910
NPN NPN NPN NPN
GP GP GP GP
2N2221 2N2221 2N2222
150 150
45 45 60 100
30 30
2N9U 2N912 2N914 2N914A
NPN NPN NPN NPN
GP GP
2N911 2N912
2N915 2N916 2N916A 2N917
NPN NPN NPN NPN
GP GP GP
2N861
2N865A 2N866 2N867 2N869 2N869A 2N870 2N871
2N902 2N903 2N904 2N905 2N906
NPN NPN PNP PNP
2N718A
2N849
2N910
SW SW
RF
2N2222A 2N2222A 2N2222A 2N917
400 500
40-120
(V)
ic
MM
MM
(mA)
(MHi)
50
1.5
15
20-60
10
.6
10
600
15
10 10 10
.6
10
12
40-120 20-60 40-120
600 300 300
40
1040
5
.15
5
15
5
25-100
5
.15
5
30
6
10-40
5
.15
5
15
6.5
25
40 25 25
25-75 12-48
5 5
30 20
75
15
5 5
.15
15 15
15
25-100
10 16 16
10
6
20-100 20-250 45-125
5 5
40
6 6
5 5 5
.15
6
6
5
.1
10
10
45-400
100 100
360 360 360 200
70 45 45 30
15
.8
1.5
15-45
30-90
18
20-120
18
40-120
40-120 100-300
20-55 45-150 110-350
.15
.1
5
25 25 100 100
5
5
.1
5
150 150 10
1.5
150 150 10
30 150 150
.15
10
1.2 1.2
50 50
1
5
1
5 5
18
1
5
1
5
36 76
1.5 1
10 10
50
75-
10
35-
30-120
10 10 10
.7
30-120
10
.4
50 25 25
50-200 50-200 50-200
10 10 10
J .5
10 10 10
15
20-200
3
.5
'
15-
40 40
Texas INCORPORATED Instruments •
5
MAX •
10 10 10
500 500 340 360
POST OFFICE BOX 5012
"C
(mA)
2N845 2N847 2N848 2N849
GP
MAX •
(V)
tj
Wta
DALLAS. TEXAS 75232
.4 .4
1
10 10
i
8
24 24 40 50 too
30 50 9
400 50 60 1
18
19
12
39 40 76
25 50 60
36
50 40 300 300
18
200 200
50 50 50
250 300 300 500
3-7
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
i TYPE
NUMBER
i
i
t
Tl
REPLACEMENT OR NEAREST EQUIVALENT
'<
VCEO
(mW)
(V)
(V)
200 200 360 360
30 30 25 25
15
20-200
3
.4
15
20-
3
.4
15 15
2040
10
.2
40-120
10
.2
50 50 40 40
20 20 25 25
20-60
10 10
.3
MAX •
MIN
•TC -25°C
2N921
NPN NPN
SW SW
PNP PNP
GP GP
2N2906 2N2906
360 360 250 250
2N925 2N926 2N927 2N928
PNP PNP PNP PNP
GP GP GP GP
2N2906 2N2906 2N2906 2N2906
250 250 250 250
50 50 70 70
40 40 60 60
2N929 2N929A 2N930 2N930A
NPN NPN NPN NPN
GP GP GP GP
2N929
300 500 300 500
45 60 45 60
45 45 45 45
2N930B 2N935 2N936 2N937
NPN PNP PNP PNP
GP GP GP GP
2N2907A 2N2907A 2N2907A
500 250 250 250
60 50 50 50
45 40 35 30
2N938 2N939 2N940
GP GP GP GP
2N2907A 2N2907A 2N2907A 2N2907A
250 250 250 250
40 40 40 25
35 35 35
2N941
PNP PNP PNP PNP
2N942 2N943 2N944 2N945
PNP PNP PNP PNP
GP GP GP GP
2N2907A 2N2907A 2N2907A 2N2907A
250 250 250 250
25 40 40 50
2N946 2N947 2N956 2N9S7
PNP
GP
2N2907A
SW GP GP
2N956 2N2221
250 360 500 250
80 20 75
80
NPN NPN NPN
40
20
2N958 2N959 2N978
NPN NPN
SW SW
PNP
2N981
NPN
GP GP
2N2906 2N720A
250 250 330 500
25 25 30 80
2N986 2N988 2N989 2N995
NPN NPN NPN
GP GP GP
2N2221 2N2221
100 20
10
20-120
10
PNP
SW
500 300 300 360
20-120 35-140
SW SW
2N930
20 20
40-120
•
(V)
.3 .5 .5
.5
.5
lc
MIN
MIN
(mA)
(MHz)
10 10 10 10
600 600 200 200
10 10
200 200 12
5 5
24
5 5
20
10
.5
5
8
.5
5
18
.01
1
10
40-120
.01
.5
10
100-300 100-300
.01
1
10
60 60 150
.01
.5
10
150
30 45 30 45
100-300
.01
150
45
.5
10
9-22
.3
18-44
.5
36-88
.6
5 5 5
.3
5
9
.3
5
18
.3
5
36 25
16
25
10
10-
1
18
10-
18
10-
50
10-
3UA 4UA 5UA
10-
SUA
20-
10 150
.4
5
1.5
45-
10
1.5
150 10
15
20-
10
.2
10
15 20 80
40-
10 150
.2
3
10 150 10
10 10
.5
10
.5
20
.2
10 20
100-300
15
*T
kHz
40-120
15-60 36-
Instruments Texas INCORPORATED POST OFFICE SOX 5012
MAX •
"c
(mA)
RF
2N917 2N918
• 1
NPN NPN NPN NPN
RF
vCE(«rt)
•w VCBO
a -J5°c
t
2N917A 2N918 2N919 2N920
2N922 2N923 2N924
3-8
I
ELECTRICAL CHARACTERISTICS
RATINGS
DALLAS, TEXAS 75222
1
25 25 25
25
1.5
50
200 70 200
200 200 40 36
300 300 100
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM KATMOS TYPf
I X
C 3
*
Tl
MHAWMNT ORNMMST QUVAUNT
pnp pnp
2N999 2N1O05 2N1006 2N1024
If.
sw
vai«ti
•ft
TA -2J«C
VCBO
•
"CEO 1
MM
•TC -25°C
1 2N995A 2H996 2N997 2N998
BSCIMCAl CHAIACmSTICS
'I
MAX •
(mW)
(V)
340 340 500 500
20
15
35-140
15
12
35-
75 100
40 60
7K-70K
60
60
7K-70K
15
15
10-25
15
15
25-150
«C
MAX •
("A) (V)
IV)
20 20
.2
(MHi)
20 60 100 50
100 100 1000
100 10 10
9
2H2906
NPN NPN NPN NPN NPN
DA GP GP
2N999 2N2217
PNP
SW
2N32S0
500 150 150 250
2N1025 2N1026 2N1027 2N1028
pnp pnp PNP pnp
SW SW SW SW
2N3250 2N32S0 2N32S0 2N3250
250 250 250 250
40 40
2N1034 2N1035 2NI036 2Nt037
PNP PNP pnp PNP
250 250 250 250
50 50 50 50
40
GP GP
J
35
.4
30 35
.3
8 8 8
J
8
2N1051 2N1052 2NI054 2N1055
NPN NPN NPN NPN
GP GP GP GP
2N2218
500
5
50 200
115 100
20-
50 200 200 50
3
150 600 200
40 200 125 100
40
2N3114 2N3114
2
50
2N1060 2N1074 2N1075 2N1076
NPN NPN NPN NPN
GP GP GP GP
2N2217 2N2218 2N221S 2N221S
250 250 250 250
40 50 50 50
40 40 35 30
17-
5
.3
5
2N1077 2N1082 2N1103 2N1104
NPN NPN NPN NPN
GP GP GP GP
2N2218
250 200
50 25 45 45
35
2N1105 2N1I06 2N1116 2N1117
NPN NPN NPN NPN
GP GP GP GP
2N698 2N698 2N2192 2N2193
800 800 600 600
2N1118 2N1118A 2N1119 2N1131
PNP PNP PNP PNP
SW SW
2N3250 2N3250
GP GP
150 150 150
2N1131
600
25 25 10 50
2N1131A 2N1132 2N1132A 2N1132*
PNP PNP PNP PNP
GP GP GP GP
2N1131 2N1132 2N1132 2N1132
600 600 600 600
60 50 60 70
2NW7 2N998
2N22K
GP
GP
2N2221 2N2221 2N222I
125 125
1.6K-8K
1.6
100 10 10
1.6
1.2
.6 .6
*
18
9
18
18 18
12
9
25-
2040
2040
7.2
9 18
34 9
30
80
15
8 3
9 18
36
10-50
10
35
3045
35
45-150
10 10
60
60
100
100
12-36
60 60
60 60
40-150
12-36
40-150
200 200 500 200
1
8
9 10
1.5
10 10
20 40
1.5
5
5 5 4
15
15-
15
.15
35
20-45
150
1.5
40
20-45
1.5
35
30-90
40 45
30-90
150 150 150 150
30-90
DALLAS. TEXAS 75222
200 200 500 200
1.5 1.5 1.5
5 150 150 150 150 150
7
6
4 15 15
25-
Texas INCORPORATED Instruments POST OFFICE BOX B012
100 10
MM
"C
|mA)
GP DA DA
.3
»r
Ufc
s 8 7.2
15
50
15
50 60 60 60
25 25 25
3-9
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
UCTRKAl CHARACTERISTICS
MAXIMUM RATMOS
I
TYH
NUMMR
Tl
REPUCEMENT Oft NEAREST
|
1
T
VCt(«rt)
•w
VCRO
ve»
(mW)
(V)
IV)
12 12
12
15
15
A -2S'C
MAX •
MIN
•TC -2S°C
k!
(mA)
NPN NPN
2N2904 2N2904 2N221S 2N1149
100 100 100 150
45
NPN NPN NPN NPN
GP GP GP OP
2N1150 2N1151 2N1152 2N1153
150 150 150 150
45 45 45 45
2N1154 2N1155 2N1I54 2N1196
NPN NPN NPN
2N1154 2NI1S5 2N1156
PNP
GP GP GP GP
750 750 750 350
50 80 120 70
2N1197
PNP
GP
2
SW SW
70 20 20 20
5-30
NPN NPN NPN
350 150 150 100
70
2N11 99
15
12-60
IS 15
12-60
20 20
2N1U9 2N1150 2N1151 2N1152 2N1153
2N1199A 2N1200
PNP PNP
»r
Ufa
RF
MAX • (V)
lc
MIN
MIN
(MHi)
1mA)
5.6
GP GP GP GP
2N1135 2N1135A 2N1139
• 1
EQUIVAUMT
1
3-10
fj
5.6
12
20-200 9-20
1
18-90
1
36-90
1
76-333
1
9-
5 5 5
5-30
2
9-
.7
10
100
.25
10
75
.25
10
1
18-40
9-
70
10
75
7-200
1.5
9
7-200
1.5
9
2N1201 2N1219 2N1220 2N1221
NPN
Iff
SW SW SW
2N3250 2N3250 2N3250
100 250 250 250
20
PNP PNP PNP
30 30 30
15 25 25 25
2N1222 2N1223 2N1228 2N1229
PNP PNP PNP PNP
SW SW
250 250 400 400
30 40
25 40
GP GP
2N3250 2N32S0 2N2904 2N2904
15
15 15
.2
10
14
.2
10
28
2N1230
PNP PNP PNP PNP
GP GP GP GP
2N2904 2N2904 2N2905A 2N2905A
400 400 400 400
35 35
35 35 60
.2
10
14
2N1231 2N1232 2N1233
.2
10
28
.2
60
.2
10 10
28
2N1234 2N123B 2N1239 2N1240
PNP PNP PNP PNP
GP
2N3494
400
1W 1W 1W
110 15 15 35
.2
SW SW SW
2NI241 2N1242 2N1243 2N1244
PNP PNP PNP PNP
SW SW SW SW
1W 1W 1W 1W
2N1247 2N1248 2N1249 2NI2J2
NPN NPN NPN NPN
GP GP GP
SW
2N2222 2N2222 2N2222 2N2537
30 30 30 600
15
60 60 110 15 15
35
189-
18 9
6
.2 .2
.2
10 10 10 10
14
14
14 28 14
35
35
.2
60 60
.2
10 10
28
60 60
.2
10
110
110
.2
10
28 14
6 6
6
15-
5UA
6
15-
.02
6 30
6
20-
1.5
150
15-45
Instruments Texas INCORPORATED POST OFFICE BOX 5012
5 5
DALLAS. TEXAS 75322
14
.03
150
40
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
RATINGS
UCTRJCAl CHARACTMSTICS
1 *t
T1
TYM
NUMMt
9 3
4
V
WUdMBtt ORMAREST ECMVAUNT
1
MM
MAX •
(V)
60 30 60 30
30 30
30-90 25-50
30
40 40 30
40-80 25-50 40-80 75-150
10 10 10 10 10
(mA)
IV)
NPN NPN NPN
SW sw SW
2N2537 2N2537 2N2537
PNP
GP
2NM31
800 600 800 275
2N1255 2N1256 2N1257 2N125S
PNP PNP PNP PNP
OP GP GP GP
2N1132 2NI131 2N1132 2N2905
275 275 275 275
30 40 40 30
2N1259 2N1267 2N1268 2N1269
PNP
GP
2N2904
50 20 20 20
25-100
RF
275 150 150 150
50
NPN NPN NPN
150 150 150 250
2N1270
RF
RF
2N1271 2N1272 2N1275
NPN NPN NPN PNP
GP
2N1276 2N1277 2N127S 2N1279
NPN NPN NPN NPN
GP GP GP
2N1335 2N1336 2N1337 2N133S
2N1339 2N1340
RF RF
"C
l«W) 2N1252A 2N1253 2N1253A 2N1254
RF
30
15-45
30-90
150 150 150 10
.3
10
40 50 50 30
.3 .3
10 10
.3
10
.6
10
50 30 50 50
.3
10
40
1.5
1.5
11
15
20-80
1.5
28
20 20 20
15
4-16
1.5
6
15
7-30
1.5
11
15
20-80
1.5
100
80
9-25
40
NPN NPN NPN NPN
GP GP GP GP
800 800 800 800
120 120 120 80
45 45 45 25
2N1341 2N1342
NPN NPN NPN NPN
GP GP GP GP
800 800 800 800
120 120 120 150
50 50 50 65
2N1386 2N13S7 2N1388 2N1389
NPN NPN NPN NPN
GP GP GP GP
2N2222 2N2222 2N2222 2N2222
300 300 300 300
25 30
45 50
25 30 25 50
2N1390 2N1409 2N1409A 2N1410
NPN NPN NPN NPN
GP
2N2222 2N2537 2N2537 2N2537
300 600 800 600
20
20
30-150
30 30 45
25 25 30
15-45
30-90
150 150 150
2N1410A 2N1417 2N1418 2N1420
NPN NPN NPN NPN
2N2537 2N2218 2N2218 2N1420
800 150 150 600
30
30
30-90
150
15
15
30 60
30
10-150
28 .3
5
1
1
S 5 5
1
5
9 18
37 76
30 30 30 30
70 70 70 70
10-150
30 30 30 30
70 70 70 70
10-150 10-150 10-150 10-150 10-150 10-150
30-90
10
.6
20-40
10
.5
5 5
15-55
10 .8
5
15-45
B
6
1
30
10
24 10
200 200 130 130
30 30 100-300
Texas INCORPORATED Instruments •
1.5
150 150 150
1.5
1.5
1
MM (MH.)
7-30
GP
POST OFFICE BOX 5012
MM
4-16
30 30 30 30
SW
lc
(mA)
(V)
15
40 40 40
GP GP GP
MAX »
ff
kHi
15
150 150 150 150
SW SW SW
•
"CEO
•TC -25°C
1
vCI(Mt)
hfl
V
TA -25°C
DALLAS. TEXAS 75222
150
1.5
150
50
3-11
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TV*
t
g g
NUMBHt
i
REPLACfMENT OR NEAREST EQUIVALENT
1*
vCE(Mt)
•ft TA -23"C
VCBO
1
MAX •
MIN
•TC -25°C
|mW)
{V)
60 6 6 50
k:
(mA)
(V)
100-300
MAX »
l
•
VCBO lc
kHi
MM
MIN
(MHi)
(mA)
(V)
60
150 5 5 5
25 25
18
.25
5 5 5
.25
5
250
1.5
250
10
.25
10
150 5 5
1.5
2NU20A
NPN PNP PNP PNP
GP GP GP GP
2N1420
2N1428 2N1429 2N1439
2N2904 2N2907A
800 100 100 400
2N1440
PNP PNP PNP PNP
GP GP GP GP
2N2907A 2N2907A 2N2907A 2N2907
400 400 400 400
60 50 50 50
50
.25
35 30 15
.25
2N1444 2N1469 2N1472 2N1474
NPN
GP GP
60 40
20-
2N2906
NPN
SW
20-
GP
2N2906A
25 60
25
PNP
500 250 150 250
20
PNP
2N1474A 2N1475 2N1476 2NI477
PNP PNP PNP PNP
GP GP GP GP
2N2906A 2N2906A 2N3495 2N3495
250 250 250 250
60 60
36
100 100
30
2N1491 2N1492 2N1493
GP GP GP GP
2N221S 2N2192 2N5059 2N1507
•3W *3W •3W
30
15
60
15
100
2N1507
NPN NPN NPN NPN
600
60
2Nt508 2N1509 2N1528 2N1564
NPN NPN NPN NPN
GP GP GP GP
2N2102 2N2102 2N2218 2N2218
1W 1W
100
150 600
2N1565 2N1566 2N1572 2N1573
NPN NPN NPN NPN
GP GP GP GP
2N2218 2N1566 2N698 2N1893
600 600 600 600
125 125
2N1574 2N1586 2N1587 2N1588
NPN NPN NPN NPN
GP GP GP GP
2N1890
600
125
125 125 125
15
2N1589 2N1590 2N1591 2N1592
NPN NPN NPN NPN
GP GP GP GP
125 125
2N1593 2N1594 2N1606 2N1607
NPN NPN
GP GP
PNP PNP
SW SW
125 125 100 100
2N1441
2N1442 2N1443
3-12
I
ELECTRICAL CHARACTERISTICS
RATINGS
*T
Tl
60 25 80 60 80
30 60
.25
•
16 16
9 9
30 50
75
12
15
100-300
150
1.5
150
50
55 35
2040 2040
600 600
3.6
600 600
50 50
60
15-50
5
30 60 80 80
30-100 60-200
5 5 5 5
80 10 20
60-200 5-27 5-27 5-27
3.6
10
40
10
30
20 40
15-50
30-100
1
10
20
1
10
40 80 20 40
1
10 10
1
10
1
10
1
1.5
5
1.5
5
1.5
5
80 9 9 9
20-75
1J
20-75
1.5
20-75 40-210
1.5
5 5 5 5
25 25 25 70
40-210 40-210 6-30
1.5
5 5
70 70
15
.15
6-30
15
.15
Instruments Texas INCORPORATED POST OFFICE BOX 9012
.1
18
15
10 10
12-
.1
12
10 20 40
60
12-
36
30 60
15
125 125
6 6 50
DALLAS. TEXAS 78282
5
1.5
1.5
5 5
7.2
10
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
SEE UNIJUNCTION INTERCHANGEABIUTY LIST SEE UNIJUNCTION INTERCHANGEAMLITY UST SEE UNIJUNCTION INTERCHANGEAMUTY UST
2N490B 2N491 2N491A 2N491B
SEE SEE SEE SEE
"C
Uta
MM
(mA)
MM (MHs)
10 10
.6
10
15
.6
10
30
150 150
1.5
150 150
15
140 140 50
25
60
1.5
.3
150 150 10
40 50 200
1.5
600
147
600
1.5
600
150 10 10
.5
150
.2
10
10 10 10
.2
A
10 10
1.2
50
5
.3
15
5
.3
15
1 1
147
50
200 140
50
140 300 50
SEE UNIJUNCTION INTBtCHANGEAEIUTY LIST
1
2N2418B 2N2419 2N2419A 2N2419B
2N2420 2N2420A 2N2420B 2N2421
P-N
UJ UJ
P-N
UJ
P-N
UJ
P-N
UJ
P-N
UJ
P-N
P-N
UJ UJ
P-N
UJ
P-N
UJ
T UNIJUNCTION UNIJUNCTION UNIJUNCTION UNIJUNCTION
INTERCHANGEANUTY
T
2N492 2N492A 2N492B 2N493
SEE UNIJUNCTION INTERCHANGEABIUTY UST SEE UNIJUNCTION INTERCHANGEABIUTY UST SEE UNIJUNCTION INTERCHANGEABIUTY UST SEE UNIJUNCTION INTERCHANGEABIUTY UST
2N493A 2N4938
SEE SEE SEE
,,
2N2421A 2N2421B 2N2422 2N2424
P-N
UJ
PNP
sw
2N242S 2N2427 2N2432 2N2432A
PNP
NPN NPN NPN
sw sw sw sw
2N2433 2N2434 2N2435 2N2434
NPN NPN NPN NPN
sw sw sw sw
LIST
INTERCHANGEAMLITY LIST INTERCHANGEABIUTY UST INTERCHANGEABIUTY UST
2N2432 2N2432A
UNUUNCTION UNUUNCTION UNUUNCTION
.
,
,
1
+
INTERCHjM4GEABUTY UST INTERCHjANGEABIUTY UST
INTERCH/LNGEABIUTY UST 5 30-200
375
40
375 500 300 300
50 40 30 45
10
25-110
40 30 45
2040
500 500 500 500
75 75 120 120
45 45 80 80
50-
1
.15
10
50-
1
.15
10
1.5
150 150 150 150
40-120 100-300
40-120 100-300
TexasINCORPORATED Instruments POST OFFICE BOX 8012
40
.01
DALLAS. TIXAI 7B822
150 150 150 150
1.5
3 3
30 50 30 50
50 20 20 80 90 80 90
3-19
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
ELECTRICAL CHARACTERISTICS
MAXIMUM tATMOS
REPLACEMENT OK NEAREST EQUIVALENT
vCE(Mt) VcbO
VCK>
(mW)
(V)
(V)
500 500 500 300
100 100 100 120
800 500 500 500
120 100 40 80
GP OP GP GP
400 400 400 400
100 100 100 100
60 60 60 60
GP GP GP GP
500 500 500 500
100 100 100 100
60 60 60 60
300
15
20-
•2W *2W
60 60 120
20-
NUMMt
TA -25°C
1
MAX •
TC -28°C
3-20
2N2437 2N2438 2N2439 2N2440
NPN NPN
SW SW SW
NPN
GP
2N2102
2N2443 2N2452 2N2453 2N2453A
NPN NPN NPN
OP GP DU DU
2N2102
2N2459 2N2460 2N2461 2N2462
NPN
2N2463 2N2464 2N2465 2N2466
NPN
2N2475 2N2476 2N2477 2N2478
NPN NPN NPN NPN
SW SW SW GP
2N2218
600
2N2479 2N2480 2N2480A 2N248I
NPN NPN NPN NPN
GP DU DU
2N2218 2N2060 2N2060
600 300 300 400
2N2483 2N2484 2N2484A 2N2497
NPN NPN NPN
GP GP GP
PCH
FE
2N2498 2N2499 2N2500 2N2501
PCH PCM PCH
FE
2N2509 2N2510 2N2511 2N2514
NPN NPN NPN NPN
GP GP GP GP
2N2515 2N2516 2N2517 2N251S
NPN NPN NPN NPN
GP GP GP GP
NPN NPN
NPN NPN
2N2453 2N2453
FE
SW
.2
10
18
.4
.4
50 50 50
36 76
100-300
10 10 10 150
50
70 80 90 90
100
50-150
50
1.2
50
45
50
30 50
150-600
150 150
60 60
40 70
100 120 140 160
15-
3575-
.4
150400 10 10 10 10
10-
20-
4060-
40 70
40-
115
60-
160
10-
30-
50 150 150 150
1.2
150 50 50
10
.25
10
2N2483 2N2484 2N2484 2N2497
40-120 60 100-500 60 100-500 60 SEE FET INTHtCHANGEAULITY LIST
.01
.35
.01
.35
.01
.35
2N2498 2N2499 2N2500 2N2537
SEE FET INTERCHANGEABHrTY LIST SEE ftl INTERCHANGEAStUTY LIST
2N3117
40
15
360 360 360
SEE FET INTERCHANGEA8IUTY UST 50-150 20 40 360
400 400 400 400
125 100
400 400 400 400
80 80 125 125
80 80
25-
•
1
240-750
10 10
6a
15-50
5
60 60 80 80
30-100 60-200
150-500
.85 1.3
50
80 150 150
150 50 50 300 12
15
60
350
20
45 45 45 30
40 60 20 40
60 100 30 60
.01
.5 .5
15-50
J
30-100
.5
DALLAS. TEXAS 7S232
60
10
80 65 50
Instruments Texas INCORPORATED POST OPFICt BOX 9012
1
100 120 140 160
600 250 250 200
150 150 150
150
40 40 40
115 160
20-
40-
75 80
80
(MHi)
(»A)
("A) (V)
30-120 30-350 50-200 40-120
SW
FE
MAX O
lc
Hta
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS Tl
£
TYPE
I
NUMBER
St
*
REPLACEMENT OK NEAREST EQUIVALENT
NPN NPN NPN NPN
2N2523 2N2524 2N2529 2N2530
NPN NPN NPN NPN
GP GP GP GP
2N2531 2N2532 2N2533
2N2534
NPN NPN NPN NPN
GP GP GP GP
2N2537 2N253S 2N2539 2N2540
NPN NPN NPN NPN
SW SW SW SW
2N2551
PNP
GP
2N2569 2N2570
NPN NPN NPN
SW SW SW
2N2571
2N2572 2N2586 2N2590 2N2591
2N2592 2N2593 2N2594 2N2595
NPN NPN PNP PNP PNP PNP
2N929 2N930
2N2537 2N2538 2N2539 2N2540
SW GP GP GP
2N2586
PNP
GP GP GP GP
2N3036 2N3496
2N2596 2N2597 2N2598 2N2599
PNP PNP PNP PNP
GP GP GP GP
2N2599A 2N26O0 2N2600A
PNP PNP PNP PNP
GP GP GP GP
2N2601
2N2602 2N2603 2N2604 2N2605
NPN
PNP PNP PNP PNP
VCFO 1
MM
Tc-M°C GP GP GP GP
GP GP GP GP
VCE(Mt)
•*E
VCBO
TA -2S°C
(mW) 2N2519 2N2520 2N2521 2N2522
ELECTRICAL CHARACTERISTICS
*T
(V)
MAX •
"C
Ml
(V)
MAX • (V)
400 400 400 400
125
60 60 60
80 60 60 60
400 400 150 150
60 60 45 45
45 45 40 40
150 )50 150 150
45 45 45 45
40 40 40 40
20-80 45-185
10 10
1.5
45-150
800 800 500 500
60 60 60 60
30 30 30 30
50-150 100-300 50-150 100-300
150 150 150 150
.45
400 300 300 300
150 20 20 20
150 5 5 15
15-45
100
300 300 400 400
20 60 100 100
400 400
15
45 60 60 60 60
•5W
100 100 80
400
80
60
2N3496 2N3496 2N3497 2N3497
400 400 400 400
80 80 125 125
2N3497 2N3497 2N3497 2N3798
400 400 400 400
125 125 125
100
60
60
2N3798 2N3799 2N2604 2N2605
400 400 400 400
60 60 60 60
60 60 45 45
5
.5
12-
1
.5
25-
1
.5
50-
1
.5
10 10 10 10
40-120 100-300
.
mm
(mA)
60-200
80
.5
10
60
.5
10
150
1
2
10
12-35
1
2
10
18
,
2
2
10 10 10 10
36
1
50-
.1
50-
.1
50-
100
50-
100
120-360
.45
150 150 150 150
1.2
100
.45 .45
100
36 76
.01
1.5
MM
18
.01
20-55
*T
(MHz)
10-20
45
39
250 250 250 250
100 100 too
.01
.5
.1
.4
10 10
150
10-
20-
.1
.4
10
70
40-
.1
.4
.1
.4
10 10
200
115 160 15
10
20
40 30
60-
70
50-150 15-60
100 5
60 60 80 80
30-120 60-240
5
.5
10
5
.5
10
40 80
60
5 5
.5
10 10
40
40
100
30-120 60-240 60-240
5
.5
10
40
5
.5
10
40 60
5
.5
10
12-
1
.5
10
18
20
10 10 10 10
36 76 60 150
80
15-60
30-120
1
.5
.5
25-
1
.5
50-
1
.5
40-
.01
.5
100-
.01
.5
Texas INCORPORATED Instruments POST OFFICE BOX 5012
"C
• Ub
DALLAS, TEXAS 75222
60 30
3-21
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY LIST 35 100-300 300 50
SEE FET
300
.01
•5W
200
1W 1W
500 500
1
1
200
.3
150 150
.35
150
10
150 30
45 50
175 150
25
2
750
LIST
1 1
SEE UNIJUNCTION INTERCHANGEABIUTY LIST
P-N
UJ
P-N
UJ
SEE UNIJUNCTION INTERCHANGEABIUTY LIST SEE UNIJUNCTION INTERCHANGEABIUTY LIST
2N3484 2N3485 2N3485A 2N3486
P-N
UJ
SEE UNIJUNCTION INTERCHANGEABIUTY UST
PNP PNP PNP
GP GP GP
2N3485 2N3485A 2N3486
400 400 400
60 60 60
40 60 40
40-120 40-120 100-300
150 150 150
2N3486A 2N3493 2N3494 2N3495
PNP
GP
2N3486A
400
60
60
NPN
SW
150
12
8
100-300 40-120
PNP PNP
GP GP
600 600
80 120
80 120
1
3-32
2N3494 2N3495
3535-
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
.4
150 150 150
200 200 200
150
.4
150
.5
.15
.01
.3
10 10
200 400 200
100 .1
.4 .4
.35
40 40
150
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS TYH
NUMMR
i 3
E 2
WlACEMBff C* NEAREST EQUIVAUNT
8
PNP PNP
2N3500
NPN NPN
1*
to veto
TA -2S°C
1
MM MAX •
(mW)
(V)
80 120 100 100
80 120 100 100
150 150 45 60
150 150 45
1W 1W
45 60 60 80
OP GP GP GP
2N3496 2N3497 2N2102 2N2102
400 400
2N2102 2N2102 2N3502 2N3503
1W 1W 700 700
2N3504 2N3505
400 400
1W 1W
(V)
.2
45 60 40 50
115-300
50 50
2N3504 2N3505 2N3506 2N3507
PNP PNP
GP GP
NPN NPN
SW SW
2N3511
NPN NPN NPN NPN
SW SW SW SW
2N3724 2N3724 2N3724 2N3724
400 400 360 360
40 40 40 40
2N3512 2N3513 2N3514 2N3515
NPN NPN NPN NPN
SW DU DU DU
2N2537 2N2640
800 2 JO 250 250
60 80 80 80
2N3516 2N3517 2N3518 2N3519
NPN NPN NPN NPN
DU DU DU DU
250 250 250 250
100 100 100 60
60 60 60 30
2N3520
NPN NPN NPN NPN
DU DU DU DU
250 300 250 250
60 70 70 70
30 55 55 55
2N3524 2N3526 2N3527 2N3544
NPN NPN
DU GP
2N2640
PNP
SW
NPN
RP
2N2944 2N3572
250 800 400 300
70 130 30 25
2N3545 2N3546 2N3547 2N3548
PNP PNP PNP PNP
GP
2N397I 2N3576 2N3799 2N2604
360 360 360 400
20
20
15
12
60 60
60 45
2N2604 2N2944 2N3553 2N3554
400 400
60 60 65 60
60 45 40 30
2N3549 2N3550 2N3553 2N3554
PNP PNP
NPN NPN
GP GP GP
SW Rf
SW
•7W 800
60
•
.2
.2
.25 .25
ic
»T
kMi
MM
(mA)
MM (MHt)
10 10 10 10
40 40 50 75
200 150 150 150
10 10
50 75
150 150
50 50
135 135
200 200
50 50
135 135
115-300 40-200
1.5
1
1.5
30-150
1.5
1
1.5
200 200 60 60
20 20
40-120 100-300
.25
10 15
25-150 30-120
10 10 150 150
10 10 10 10
500 500 350 450
35
10-
500
40 40 40
50-200
1
1.2
50-200 50-200
1
1.2
1
1.2
50-200
1
1.2
50-200
1
1.2
50-200
1
1.2
150400
1
1
150-600
1
1
100-300
.01
1
100-300
.01
1
100-300
.01
1
50
100-300
.01
1
10
120
30-120 25-75
30
1
50
25-
10
30
40-120 30-120 100-500 100-300
.25 .25
.25 .25 .25
1
10 10
.2
.15
1
.01
1
100-500
.01
1
.01
.9
10-100
250 750
.7
25-100
DALLAS, TEXAS 79»»»
500 50 50 50
50 50 50
250 50 50 50
5
50 50 50 150
60 60 60 60
5
150
60 30
50 50 50
10 10 10
.1
200400
Texas INCORPORATED Instruments POST Office BOX 6012
.3
.35
150 150 50 50
PNP PNP
SW
.1
40-120 100-300 115-300 115-300
2N3501
2N2643 2N2643
40-120
too
.2
2N3502 2N3503
2N3521 2N3S22 2N3523
35-
35-
MAX o (V)
150 150
GP GP GP GP
2N2639
"C
(mA)
100-300
NPN NPN
2N3508 2N3509 2N3510
•
Vcffiatl
VCEO
•TC -25°C
| 2N3496 2N3497 2N3498 2N3499
UCTRICA1 CHARACnUSTICS
*r
Tl
1
30 '30
25 100
10 10 10 10
120 150
10 5
150 300
250 750
I
30 40 5 600
250 700 45 60
60 60 400 150
3-33
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATINGS Tl
§
TYPE
NUMMt
i
I ^
EUCTRJCAL CHARACTERISTICS
1*
PT
REPLACEMENT OR NEAREST EQUIVALENT
vCBO
vCEO
|mW|
(V)
(V)
TIS97
200 200 200 300
30 30 30 40
A5T3567 A5T3568 A5T3569 2N3570
300 300 300 200
2N3571 2N3572 2N3573 2N3574
200 200
TA -25°C
1
MIN
•TC -25''C
MAX •
12
20-200
15
20-
NPN NPN NPN NPN
2N3567 2N3568 2N3569 2N3570
NPN NPN NPN NPN
OP GP OP
2N3571 2N3572
NPN NPN
RF
2N3573 2N3574
PCH PCH
FE
2N3575 2N3576 2N357S 2N3579
PCH PNP PCH PNP
FE
2N3580 2N35S1 2N3582 2N35S6
PNP PNP PNP PNP
GP GP GP
2N35S7 2N3600 2N3608 2N3609
NPN NPN
DU
PCH PCH
FE FE
SEE FET INTERCHANGEABILITY LIST
2N36I0
PCH
FE
2N3631 2N3633 2N3634
NCH NPN
FE
PNP
GP
2N3634
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST 50-150 15 6 300 50-150 140 140 1W
2N3633 2N3636 2N3637 2N363S
PNP PNP PNP PNP
OP OP OP
2N363S 2N3636 2N3637
1W 1W 1W
UO
SW
A5T363S
300
25
140 175 175 25
2N363SA 2N3639 2N3640
PNP PNP PNP
SW SW SW
A5T3638A
25 6
25 6
12
12
2N3641
NPN
RP
2N5449
300 200 200 350
60
30
2N3642 2N3643 2N3644 2N3645
NPN NPN
RF
PNP PNP
SW SW
2N5449 2N5449 A5T3644 A5T3645
350 350 300 300
60 60 45 60
TIS62
RF
2N4996 A5T3565
OP OP
RF
RF
FE
>C
|mA)
2N3563 2N3564 2N3565 2N3566
RF
•
VcE(Mt)
>>FE
25 30
150400 150400
80 80 80 30
40 60 40
40-120 40-120 100-300
15
20-150
25 25
15
20-200
13
20-300
8 15 1
10
150 150 150 5
MAX • (V)
.3
.35 1
.25 .25 .35
'C
»T
Ufc
MIN
MIN (MHi)
(mA)
100
600 400 40 40
150 150 150
60 60 60
20
20 20
1
5 5
20
150
20 20
150 100
SEE FET INTERCHANGEABILITY LIST
SEE FET INTERCHANGEABILITY LIST |
SW FE
GP
SW
RF
2N3575 2N3576 2N2608 2N3799
SEE FET INTERCHANGEABILITY LIST 15 40-120 20 360
10
1
.5
5
30
80
60-240
1
.5
5
50-150
.1
.5
5
100-300
.1
.5
5
60 50 100
80 30 30
10
125
60 50 50 45
60 40 40 45
300 200
60 30
45
80-500
1
15
20-150
3
2N3799 2N3799 2N379? 3N108
400 400 400
2N2640 2N4252 3N155
400
.15
|
SEE FET INTERCHANGEABILITY LIST 30-120 60 60 400
.1
1
40
80 850
10
SEE FET INTERCHANGEABILITY LIST 1 1
SW
RF
175 175
10
.21
3
50
.5
50
40
1.3G 150
.5
200 150 200
.25
50 50 50 50
80 40 80
30-
50 50 50 50
100-
100-300 50-150 100-300
•
.5
100
50
.25
50
150
30-120
10
.16
10
30-120 40-120
10 150
.2
.22
10 150
500 500 250
45 30 45
40-120 100-300
60
100-300
150 150 150 150
150 150 150 150
250 250 200 200
100-300
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
.5
DALLAS, TEXAS 78232
.22 .22 .4 .4
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
I
TYPI
MPUCHMNT
NUM1ER
OR NEAREST
QIHVAUNT
1
UCTMCAl CHARACTERISTICS
RATINOS
PT
Tl
vCBO
TA -25°C
MM
•TC -2S°C
MAX o
30-120 25-150 20-
30 150 150 10
500 500
1.2
8 8
.6
.6
10 10
50
.75
250
150 150 150
.5
150 150 150
300 60 60 200
2N5058
•4W
2N3660
PNP PNP
OP GP
2N4030 2N4030
*JW •SW
40 60
30 50
25-100 25-100
NPN NPN
RF
TIS62
18
12
20-
RF
TIS62
200 200
30
12
20-
2N3664 2N3665 2N3666
NPN NPN NPN
RF
•5W *5W *5W
60 120 120
2N3671
PNP
OP
2N2905
600
60
60 80 80 50
2N3672 2N3673 2N3677 2N3678
PNP PNP PNP
GP GP GP
400 350 400 800
60 60 30
NPN
2N2907 2N34S6A 2N2944 2N2218A
2N3679 2N3680 2N3681 2N36S2
P-N
UJ
NPN NPN NPN
DU
2N3683 2N3684 2N3685 2N3686
NPN
RF
NCH NCH NCH
FE
2N3570 2N3822 2N382I
SEE FET INTERCHANGEASIU TYU.ST SEE PET INTERCHANGEASIUTYLIST
FE
2N3821
SEE FET INTERCHANGEASIUTYLIST
2N3687 2N36S8 2N3689 2N3690
NCH NPN NPN NPN
2N3691 2N3692 2N3693 2N3694
NPN NPN NPN NPN
2N3695 2N3696 2N3697 2N3498
PCH PCH PCH PCH
FE
2N3700
NPN NPN
GP OP OP GP
2N3701 2N3702 2N3703
PNP PNP
8-80
40-120 100-300 75-225 75-225
.3
.25 .25
1.2
.5 .4
(mA) 30 10 10
(MHx)
20 20 20
500 500
350 350 450 50 25 25 700 700
75-225
150 150
.4
150 150
200 200
40-120
150
.4
150
250
.4
5
300 200 360
50 7
150400
.01
.7
10
10
20-220
2
.37
4
40
15
40-120
200
30
12
20-150
60
1.3G
10
300 20 45
8
30
to
60 600
SEE FET INTERCHANGEASIU nr list
RF
TIS84
RF
TIS84
RF
TIS84
OP OP
TB99
RF
2N4994 2N4995
FE
75
50 50 20 55
30-120
(V)
SEE UNIJUNCTION INTERCh ANOEA8IUTYU ST
2N3680 2N3570 2N918
FE
RF
MM
10 IS 170
OP
FE
MM
IS
(mA)
40 40 40 220
RF
>C
200 400 400
(V)
A5T3903
RF
MAX •
(V)
SW sw SW
SW
k:
kHi
(mW)
NPN NPN NPN NPN
SW SW
• 1
2N3646 2N3647 2N3648 2N3659
2N3661 2N3662 2N3663
vei(«*i
Nt Veto
TIS98
2N3329 2N3329
FE
200 200 200
40 40 40
40 40 40
200 200 200 200
35 35 45
25 25 45
40-
10
45
45
100-
10
30-
30-
4 4 4
40-
10
.7
100-
10
.7
30-
400 400 400 10 10
40 100
200 200 200 200
150 150
SO 30
100
SEE PET INTERCHANOEASH ITYUST SEE PET INTERCHANOEASIUITYLIST SEE PET INTERCHANOEASIUTYIIST SEE FET INTERCHANGEAilt TYLIST
FE
2N720A 2N720A 2N3702 2N3703
500 500 360 360
140 140
40 50
80 80 25 30
100-300
40-120 60-300 30-150
Texas INCORPORATED Instruments POST OPPICI BOX S013
•
DALLAS. TEXAS 7S2S2
150 150
.2
50 50
.25
.2
.25
50 50
80 100 100
3-35
2
1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYK
P
I
NUMBER
REPLACEMENT OK NEAREST EQUIVALENT
I*
A -25°C
T
hK veto
1
MIN
(mW)
(V)
MAX •
«C
(mA)
(V)
MAX • IV)
50 50 50
.6
.1
1
2N3704 2N3705 2N3706 2N3707
NPN NPN NPN NPN
GP GP GP GP
2N3704 2N3705 2N3706 2N3707
360 360 360 360
50 50 40 30
30 30 20 30
100-300
2N3708 2N3709 2N3710 2N3711
NPN NPN NPN NPN
GP GP GP GP
2N3708 2N3709 2N3710 2N371
360 360 360 360
30 30 30 30
30 30 30 30
45-660 45-165 90-330 180-660
2N3712 2N3721 2N3722 2N3723
NPN NPN NPN NPN
GP GP
2N3725
150 18 80 100
150 18
SW SW
800 360 800 800
30-150
2N3711
60 80
40-150 40-150
2N3724 2N3724A 2N3725 2N3725A
NPN NPN NPN NPN
SW SW SW SW
2N3724 2N3724A 2N3725 2N3725A
800
30 30 50 50
60-150 60-150
IW
50 50 80 80
2N3726 2N3727 2N3728 2N3729
PNP PNP
2N3810 2N3810 2N2060 2N2060
400 400 450 430
45 45 60 60
45 45 30 30
135-350
1
.25
135-350
1
.25
NPN NPN
DU DU DU DU
2N3734 2N3734A 2N3735 2N3735A
NPN NPN NPN NPN
SW SW SW SW
2N3734 2N3734 2N3735 2N373S
IW IW IW IW
50 50 75 75
30 30 50 50
30-120
2N3736 2N3736A 2N3737 2N3737A
NPN NPN NPN NPN
SW SW SW SW
500 500 500 500
50 50 75 75
30 30 50 50
30-120 30-120
2N3742 2N3743 2N3762 2N3763
NPN
GP GP
2N5058
SW SW
2N3244 2N3245
IW IW IW IW
300 300 40 60
2N3764 2N3765 2N3774 2N3775
PNP PNP PNP PNP
GP GP GP GP
2N3486 2N3486A 2N4030 2N4030
500 500
2N3776 2N3777 2N377S 2N3779
PNP PNP PNP PNP
GP GP GP GP
PNP PNP PNP
1W 800
•
VcE(tat)
VCEO
•T C -2S"C
|
3-3B
UCTMCAl CHARACTERISTICS
RATINGS
h
n
50-150 3O-6O0 100-400
60460
60-150 60-150
.8 1
100 100 100 10
too 100 100 100
2
50
25
.22
100 10
300 300
100 100 100 100
300 300 300 300
1
1
1
.25
.2 .2
.26 .26
50 50
135 135
150 150
50 50
.22
1A 1A 1A 1A
.2
10
.9
IA 10 IA
.2
10
.9
IA
2040
1A IA 1A IA
300 300 40 60
20-200 25-250 30-120
30 30 IA
.1
2040
IA
.1
40 60
30-120
60
2040 2040 2040
IA IA
<5W •5W
40 60 40 60
*5W •5W •5W •5W
80 100 40 60
80 100
2040 2040
40 60
10-40
80-280
30-120 20-80 20-80
20-80
10-40
Instruments Texas INCORPORATED POST OFFICE BOX M12
•
DALLAS. TSXAS 7822
45 45 90 180
1
150 150
80-280
MM (Mite)
1
1
1
100 100 100 100
MM
(mA)
10 10 10 10
1
30 10 100 100
»T
kHz
.22
.2
.9
.2
10
.9
IA
1
5
.1 .1
200 200
.2
200 200 200 200
.2
.2
.2 .2 .2
10 10 10 10 10 10
40
200 200 250 250 300 250 250 250 300 250 250 250
20 30
30 30 180 150 180 150
200 200
1
200 200 200 200
1
1
1
1 1
1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYPE
i i— <
£
NUMBER
VI
REPLACEMENT OR NEAREST EQUIVALENT
2N3796 2N3797 2N3798 2N3799
PNP PNP PNP PNP
GP GP GP GP
2N4030
NCH NCH
FE
PNP PNP
GP GP
2N3798 2N3799
DU DU DU DU
2N3352 2N3352 2N3347
2N3803
PNP PNP PNP PNP
2N3804 2N3804A 2N3805 2N3805A
PNP PNP PNP PNP
2N3806 2N3807 2N3808 2N3809
2N3800
FE
vCE(«ot)
l*E
vCSO
TA -25°C
•
VCEO 1
MIN
(mW)
2N3781 2N3782 2N3795
ELECTRICAL CHARACTERISTICS
•TC = 25°C
u 2N3780
RATINGS
Tl
(V)
•5W *5W •5W •5W
MAX •
(V)
"c
MAX o
(mA) (V)
80 100
80
10-40
100
10-40
40
40
120
120
"C
10-60
.75
200 200 1A
12-36
10
.2
10
SEE FET INTERCHANGEABH. itvust SEE FET INTERCHANGEABIL 1Y11ST 360 60 60 150-450 360 60 60 300-900
.2 .2
150
300 150 300
too 100 100 100
150 150 300 300
100 30 100 30
150 300 150 300
100 100 100 100
150 150 300 300
too 30 100
150 300 150 300
100 too 100 100
150 150 300 300
too 30 too
.1
.2
.1
.2
.1
.2
.1
2N3351
300-900
.1
.2
.1
DU DU DU DU
2N3350 2N3350 2N3350 2N3350
250 250 250 250
60 60 60 60
60 60 60 60
150-450 150-450
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
PNP PNP PNP PNP
DU DU DU DU
2N3806 2N3807 2N3808 2N3809
500 500
60 60 60 60
150-450 300-900
.1
.2
.1
.1
.2
.1
150450
.1
.2
.1
500
60 60 60 60
300-900
.1
.2
.1
PNP PNP PNP PNP
DU DU DU DU
2N3810 2N3810 2N381 2N381
500 500 500 500
60 60 60 60
60 60 60 60
150-450
.1
.2
.1
150-450
.1
.2
.1
300-900 300-900
.1
.2
.1
.1
.2
.1
PNP PNP PNP PNP
DU DU DU DU
350 350 350 350
60 60 60 60
60 60 60 60
150-450 300-900 150-450 300-900
2N3816 2N3816A 2N3817 2N3817A
PNP PNP PNP PNP
DU DU DU DU
350 250 350 250
60 60 60 60
60 60 60 60
150-450
2N3819 2N3820 2N382I 2N3822
NCH
FE
PCH
FE
NCH NCH
FE
2N3823 2N3824 2N3825 2N3826
NCH NCH NPN NPN
FE
2N3811 2N381 1A
2N3812 2N3813
2N38M 2N3815
FE
FE
2N3819 2N3820 2N3821 2N3822 2N3823 2N3824
OF RF
2N4994
150-450
300-900 300-900
1
.5
.1
.1
150-450 300-900 150-450
2N3810 2N38IOA
1
.1
.1
.2
60 60 60 60
500"
1
30 30
.2
60 60 60 60
300-900 300-900
MM (MHz)
150 300
.5 .5
250 250 250 250
2N3801 2N3802
MM
(mA)
200 200 1A
H
kHz
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
.1
.2
.1
2
.25
2
30
30
SEE FET INTERCHANGEABIU1IYUST SEE FET INTERCHANGEABIU1nrusT SEE FET INTERCHANGEA8IU1IYUST SEE FET INTEkCHANGEABILriIYUST SEE FET INTERCHANGEAMLnfY LIST SEE FET INTERCHANGEABILnnr list 250 30 15 20-
60
360
45
40-160
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
10
200 200
3-37
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
ELECTRICAL CHARACTERISTICS
MAXIMUM RATMOS
I
TYPE
NUMBS)
l
NPN NPN
RF
PNP
SW
NPN
GP
2N3829 2N2193
2N3831 2N3S32 2N3838
NPN NPN
GP
N/P
GP
2N3839
NPN
2N3840
2N4997
RF
vceo
|mW|
(V)
(V)
340 300 360
60 40 35 80
2N2193
1W
70 15
RF
2N3571
200 250 200
60 30
PNP PNP PNP
SW SW SW
2N2946 2N2946 2N2946
NPN
RF
TIS94
400 300 300 200
2N3S43A 2N3844 2N3S44A 2N3845
NPN NPN NPN NPN
RF
TIS94
RF
TIS94
RF
TIS94
RF
T1S94
200 200 200 200
30 30 30 30
2N3845A 2N3854 2N3854A 2N3855
NPN NPN NPN NPN
RF
TIS94
RF
TIS94
RF
TIS94
RF
TIS94
200 200 200 200
2N3855A 2N3856 2N3856A 2N3858
NPN NPN NPN NPN
RF
TIS94
RF
TIS94
RF
TIS94
RF
TIS95
2N3B58A 2N3859 2N3859A 2N3860
NPN NPN NPN NPN
RF
TIS95
RF
TIS95
RF
TIS9S
RF
TIS95
SW
2N3862 2N3866 2N3S66A 2N3867
NPN NPN NPN
SW
PNP
SW
2N3868 2N3869 2N3877 2N3S77A
PNP
SW
NPN NPN NPN
RF
GP GP
2N5550 2N5550
2N3S80 2N3881 2N3882 2N39O0
NPN NPN
RF
2N3570
PCH
FE
NPN
GP
RF
RF
2N3711
100400 30-200
MAX » (V)
30
.18
30-
150
.3
35-
.3
30-120
15
30-
150 2 150 3
50
50
30-
.2
.1
100 120 30
100 120 30
15-
.2
.12
40 6 40
25-125 100-300
.4 .4
10-
1
2
1
30 30 30 30
2040
2
1
35-70
2
1
35-70 60-120
2
1
2
1
30
30
1
18
2
.2
30
30
2
.2
18
18
60-120 35-70 35-70 60-120
2
18
2
.2
200 200 200 360
30
30
60-120
2
.2
18
18
100-200
2
.2
30 30
30 30
100-200
2
60-120
2
360 360 360 360
60 30 60 30
60 30 60 30
60-120 100-200 120-200 150-300
•5W •5W
50 55 55
1W
40
IW
60 40
800 360 360
70 85
10 150
200 360 350 200
150 10 150
10
60
10 10
60 90 90
1
10 10
120
10 10 10 10
120 100 100 130
.2
10 10 10
130 140 140
.125
10
90
2
.125
10
2
.125
10
2
.125
10
2
.125
90 90 90 90
10
10
30-150
1.5
.75
1.5
20-150
30
.7
450
DALLAS. TEXAS 7S222
.25
50 50
1 1
2 2
1 1
1.5
60 400
10 10
3 1.5
600 500 800 60
10 100 100
60 20 70 85
Instruments Texas INCORPORATED
6 1.5
.75
30-200 15 30 35 60 SEE FET INTERCHANGEABIUTY UST 250-500 18 18 360
60
200 800 200 200
5 5
1.5
20-
MM (MHx)
50-150 10-200 25-200 40-200
20-
MM
(mA)
20 30 30 40
200 600
POST OFFICE BOX 5012
lc
ft
kHz
10 12
2040
360
2N3866 2N3866
"C
(mA)
45 40 20 50
•
VCE{«*1 1
MM MAX •
1W
RF
vow
TA -23»C
•TC -25°C
2N3827 2N3B28 2N3829 2N3830
2N3841 2N3842 2N3843
3-38
I
""1
Tl
REPLACEMENT OR NEAREST EQUIVALENT
150
50 50
1
2
170
1.2G
70
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS
ELECTRICAL CHARACTERISTICS
Tl
TYPE
REPLACEMENT OR NEAREST
NUMB**
EQUVAUMT
\
Veto
TA -33*C
w
Vceo
1
MM
1 |mW|
NPN NPN NPN NPN
GP GP
PNP PNP
SW SW
NPN NPN
DO DU
2N3909 2N3910 2N391 2N3910
PCH PNP PNP PNP
SW SW SW
2N3913 2N3914 2N3915 2N3916
PNP PNP PNP
SW SW SW
NPN
GP
2N3921 2N3922
NCH NCH NPN
FE
2N3900A 2N3901 2N3903 2N3904
2N3905 2N3906 2N3907 2N3908
2N3923 2N3930
SW SW
FE
IS
It 18
60 60
40 40
2N3905 2N3906 2N2915 2N2916
310 310 300 300
40 40 60 60
40 40 45 60
2N5545
PNP
18
MAX •
(V|
360 360 310 310
"C
(mA)
MAX • (V)
250-500
2
350-700 50-150 100-300
2 10 10
.2
"C
kHi
MM
(mA)
MM (MHi)
170 350 .2
10 10
250 300
10 10
200 250 60 60
50-150
10
.25
100-300
10
.25
60-300 100-500
.01
.35
1
.01
.35
1
SEE FET INTERCHANGEAMU TYUST
500 500 500
60 60 60
50 40
40-160
1
.3
60-240
1
.3
30
90-
1
.3
400 400 400
60 60 60
50 40 30
40-160 60-240
1
.3
90-
1
.3
•5W
150
150
40-200
SEE FET
.3
150
5
10 10 10
4 8 10
10 10 10 150
30
50
4 8 10
INTERCHANGEAWUTYUST
SEE FET INTERCHANGEAML TYUST
FE
GP GP
(V)
2N371I 2N3711 2N3903 2N3904
2N3909 2N2946A 2N2946A 2N2946A
•
Vcf(«rt)
2N3931 2N3932 2N3933 2N3934
PNP
GP
2N6937
NPN NPN NCH
RF
2N3S71
z Mz Mz Mz
RF
800 400
150 180
150 180
30-120
25 10
.25
25 10
20 100
40
80-300
700 200 200
180 30
180 20 30
80-300 40-150 60-200
10 2 2
.25
10
100
50 60
40 750 750
300 300 300
200 200 200
300
100
200 60 250 300
40
1.3G
40
FE
2N5545
SEE FET INTERCHANGEAMUlnrusT
NCH NPN NPN NPN
FE
2N5546
SEE FET INTERCHANGEAWU"nrusT
DU DU DU
300 300 500
60 60 60
45 45 45
400-1200 400-1200 400-1200
2N3944 2N3945 2N3946 2N3947
NPN NPN NPN NPN
DU GP GP GP
500 360 360
60 70 60 60
45 50 40 40
400-1200 40-250 50-150 100-300
2N394S 2N3953 2N3954 2N3955
NPN NPN NCH NCH
2N3956 2N3957 2N3958 2N3959
NCH NCH NCH NPN
1
40
1
h»
1
w *. *•*
2N2270 2N2217 2N2219
•5W
1W
36
20
15-
2N3571
200
15
12
30-360
RF RF FE
2N5546
FE
2N5547 2N5547 2N5547
FE
SW
.01 .01
.01
150 10 10
.5
150
.3
50 50
.3
50
50
700
2
SEE FET INTERCHANGEAMU1YUST
FE
FE
.01
SEE FET INTERCHANGEAWUTYUST 1
SEE FET INTERCHANGEAMUTY LIST SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEAMUTY LIST 400 20 12 40-200 1
TexasINCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS. TEXAS 75222
10
.3
30
1.3G
3-39
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
E
NUMBS
<
If.
PT
Tl
TYPE
REPLACEMENT OR NEAREST EQUIVALENT
NPN
SW
PNP FNP PNP
GP GP GP
2N3962 2N3963 2N3964
2N3965 2N3966 2N3967 2N3968
PNP
GP
NCH NCH NCH
FE
FE
2N3965 2N3966 2N3822 2N3822
2N3969 2N3970 2N3971 2N3972
NCH NCH NCH NCH
FE
2N3821
FE
2N3970 2N3971 2N3972
2N3973 2N3974 2N3975 2N3976
NPN NPN NPN NPN
SW SW SW SW
TIS133
2N3977 2N3978 2N3979 2N3980
PNP PNP PNP
SW SW SW
P-N
UJ
2N2944 2N2944 2N2944 2N3980
2N3981 2N3982
NPN NPN NPN NPN
GP GP
2N2219 2N2218
RF
TIS62
RF
TIS63
2N3985 2N3993 2N3994 2N4006
NPN
RF
TIS64
PCH PCH PNP
FE
2N3993 2N3994 2N2944A
2N4007 2N40O8 2N4009 2N4010
PNP PNP PNP PNP
SW SW SW SW
2N4011
PNP
2N4013 2N4014 2N4015
NPN NPN
SW SW SW
2N4013
PNP
DU
2N4016 2N4017 2N4018 2N4019
PNP PNP PNP PNP
DU
2N3983 2N3984
340
FE
FE FE
FE
SW
DU DU DU
TIS133 TIS133 TIS133
(mW)
(V)
(V)
400 360 360 360
20 60 80 45
12
40-200
10
.3
30
60 80 45
100-300
.01
.25
100-300
.01
.25
250-500
.01
.25
10 10 10
100 100 250
40 40 50
360
60
60
250-500
.01
.25
10
250
50
1
MAX •
MIN
MAX •
k:
(mA)
|
(V)
"c
Ufa
MIN
MIN (MHi)
(mA)
1.6G
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILI TYLIST SEE FET INTERCHANGEABILITYLIST
SEE FET INTERCHANGEABILITYLIST SEE FET INTERCHANGEABIL TYLIST
Sm DataShMtOn A5T6116 Sm Data ShMt On A5T6117 Sm Data ShMt On A5T61 18 Sm Data ShMt On A7T6027
POT PNPN OJT P-N OJT P-N OJT P-N
A7T6028 2N4891
Sm
Tl
A7T602S
Tl
MU4891 MU4S92 MU4893
M M M
M04894
M
OJT
P-N
2N4894
TIS43
Tl
UJT
P-N
T1S43
Tl
UJT
P-N
T1S43 2N4891
Tl
(kR)
PNPN PNPN PNPN PNPN
A5T6116 A5T6117 A5T6118 A7T4027
Tl
1
•v
IP
'EB20
(mA)
(MA)
<«A>
u (mW)
Tl
BB
POT POT PUT PUT
I
2N4892 2N4893
1
Data ShMt
On A7T6028
300 300 300
4-9.1
.55-.S2
2
S
.01
4-9.1
.51-.69
2
2
.01
4-12
.S5-.82
2
2
.01
300 300 300
4-12
.74-.86
2
1
.01
4-9.1
.55-.S2
2
.01
4-9.1
.5S-.82
2
5 5
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 75222
.01
3-117
Transistor Data Sheets
"
TRANSISTOR DATASHEETS CONTENTS In this section are data sheets for
most of the Texas Instruments
to Tl's line of silicon power transistors, see either Section 0,
Excluded from
this
volume are data sheets for
Index. Loose-leaf data sheets for these devices
line
of standard, low-power silicon transistors. (For reference
Type Number Index, or The Power Semiconductor Data Book.
certain obsolescent types listed and so indicated in Section 0,
may be
available
upon
Type Number
request.
DERIVED TYPES Many
of the JEDEC-registered types are available in repackaged form.
derived from the original
JEDEC
type numbers by replacing the
"Repackaging" may mean providing a plastic-encapsulated
AST2222 from the
B
is
registered type (for example, the
A5T3904
registered with the in-line-lead
is
chips, "repackaging"
any
or
means no package
at
is
The
3N
designations of these repackaged devices are
prefix with a prefix explained in the table below.
{Silect^) equivalent for a metal-cased
a Silect 100-mil pin-circle equivalent for the metal-cased
2N3904 which
In
2N
2N2222) or perhaps
type (for example, the
different basing (lead locations)
a Silect 100-mil pin-circle equivalent of the plastic-encapsulated,
TO-92 package.)
In the case of the
A4T
prefix for
unmounted
transistor
all.
case, the specifications for the prefixed devices are as close to the registered devices as packaging will permit.
PREFIXES FOR REPACKAGED TRANSISTORS
A3T
Microsilect* (obsolescent, not covered
A4T
Unencapsulated transistor chips (not covered
in this
book) in this
book)
A5T,
A6T 3
& 2
TRANSISTOR
LEAD
1
2
Multifunction
Emitter
Field-Effect
Programmable Unijunction
TRANSISTOR Silect^ Package
LEAD
Multijunction
LEAD 3
Base
Collector
Source
Drain
Gate
Cathode
Gate
Anode
A6T LEAD
LEAD
1
2
Base
Emitter
LEAD 3 Collector
A7T,
A8T
A7T 1
23
TRANSISTOR
* Trademark of
4-a
Texas Instruments Incorporated
LEAD
1
2
LEAD 3
Multijunction
Emitter
Collector
Base
Programmable Unijunction
Anode
Cathode
Gate
TRANSISTOR TO-92 Silect* Package
LEAD
Multijunction
A8T LEAD
LEAD
1
2
Emitter
Base
LEAD 3 Collector
B2T
Unencapsulated beam-lead transistor chips (not covered in this book)
B3T
Beam-lead transistors, 100-mil pin circle (not covered
in this
book)
V B4T
Beam- Lead
I B5T
>--
D2T
transistors,
200-mil pin circle (not covered
in this
book)
Beam-lead transistors, plastic high-frequency
package
(not covered in this book)
I
Dual transistors, short-can version of
TO-78 package
Q2T
%»
Quad
transistors,
TO-1 16
plastic
dual-in-line
package
ORGANIZATION Data Sheets are organized
in
alphanumeric order with numbers taking precedence over
letters.
The exception to
this
is
that
derived types are placed immediately after the registered types from which they were derived.
CHIP-CHARACTERIZATION REFERENCE Transistor chip families are characterized in Section 5. Reference to the related chip family
corner of each data sheet,
if
is
made on the lower
right-hand
appropriate.
Exceptions:
•
Grown-junction bars are not characterized.
•
Bar-type unijunction transistors are not characterized.
•
When
the observed values of the characteristics of the basic chips are not applicable to specific devices because of
highly selective screening or special diffusions, chip-family references are omitted.
•
Transistor types containing
two darlington-connected chips do have the chip-family reference but
noted that while the characterization data does apply to the individual chips, darlington-connected pairs.
it
it should be does not apply directly to the
TYPE 2N1T7 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S
9
20
to
MARCH
B8896,
1968
beta spread
Spedficafcy designed lor high gain at high temperatures
mochanical data Welded case with glass-to-metal hermetic seal between case and Ml CONNKTIONS
INSUlATtD
MOM
maximum
absolute
1—0 MO
_. 0.040 (* O.0OSI 0.0)7 1+ 0.001 - OM1) DIA.
1.7 grams.
'
MAX.
D
INCHU
IN
25*C ambient
rating* at
is
u
|
—
L1AM
AU DWUNHON1
Approximate weight
CASI
0.4M MAX.
>
leads.
inct*) «*•»• advanced tsmpofanmo or, indicated!
45
Collector Voltage Referred to Base
Collector
Current
25
Collector Dissipation
I
100'C 150'C
V
150 100
[
50
at
•mparotura Maximum Range
Common
-6B*C
base) dOSlgn characteristics at TJ
=
25°C Met
Brakdown
BVcBO
Collsctor
ICBO
Collsetor Cutoff Current
Vottai* f
it 100* at
C,
150*C r
(except
l
Vcb-MV V C g- 5V V CB -
5V
E
e
-0
l
E
-0
I
e
l
E
feedback Vottife Ratio
Ves-
5V
l
£
lift
Currant Transfer Ratio
V CB - 5V
l
E
PG. NF
Power Gtin't
Vce -20V Vce - 5V V CB - 5V v ce - sv lg- 2.2mA
l
E
l
E
Col.
Output Capacitance (lmc)
R et
Saturation Resistance*
•Commoa
tmffloj
t«l
-
Ik;
«i
-
20*
JConvtntloMl
max.
l
E
l
E
l
c
-
-1mA -2mA -1mA -1mA - -1mA -5mA
IMM-Coaparod
30
42
25
120
-0.9
-0.925
80
0.4
to 1000
1.2
500
unit
do db
20
mc
4
w'
7
100 resistor,
*A *A *A Ohm Mmho X1(H
-0.953
35
ohm
+175'C
Volt
50
- -1mA - -1mA - -1mA
to
mW mW mW
Indicated]
45
10
l
Output Admittance
Noise Figure't
an
2
hob
Frequency Cutoff
mln.
-0
dealon conlor
Ie-0
!>,»
Input Impedincs
wh.ro advanced tomperahjrea
conditions
Ic-SOkA
V CB - 5V V C »- 5V
hib
u
mA
— 25 mA
Emitter Current at
V
IV
Emitter Voltage Referred to Base
200
1000 ept and
1 cycle
Ohm Band width
PRINTED IN U.S.A.
TexasINCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN ORDER TO IMPROVE DESIGN AN0 TO SUPPLY THE REST PRODUCT POSSIBLE.
POST OFFICE OOX S012
DALLAS. TEXAS 75»22
4-1
J
TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S
18 to
40
B8897,
MARCH
1958
beta spread
Specifically designed for high gain «t high temperatures
mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight ROM
= = 20v = » 'A = 150° »CI = 20> = 50 M = 'c =» lc = 100 Ma = » Ma C=» = — mo = Uc v c ,= »v — ma = Ikt 6 == »C.= »> — ma = lkc E = »CI = 20> = — ma = lk< »CI = 20> = = St ma c »CS — ma = mc E = 'C» = 20t — ma E = »c.= 20. = Imc 6 = »C.= »T ma c = 10 on '.= »«
cannot assume any responsibility for any circuits shown
or
represent
that
they
ore
tree
from patent infringement.
TEXAS INSTRUMENTS RESERVES THE (TIGHT TO MAKE CHANCES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT P0SSI81E.
Texas INCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS. TEXAS 75222
4-13
TYPE 2N338 N-P-N
GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 73356, JUNE 1960-REVISED MARCH 1973
FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS
• Low Collector Capacity • High Gain at Low Levels
• Guaranteed 45-150 DC Beta • 20 mc min Alpha-Cutoff I
mechanical data Welded case with
hermetic seal between case and leads. Unit weight dimensions and notes are applicable.
is
glass-to -metal
JEDEC TO-5
gram. All
1
ALL LEADS INSULATED FIOM
approximately
USE
0.100—
I
h-
0.100 MIN Of OUTLINE INZONE OPTIONAL
DETAILS THIS
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE
SPECIFIED
maximum
absolute
ratings at
(unless otherwise noted)
25"C ambient temperature
45v 30v 20 ma 20 ma
Collector-Base Voltage Collector-Emitter Voltage
Collector Current Emitter Current
Total Device Dissipation (Derate
1mw/°C
for
—65°C
2S°C ambient temperature
electrical characteristics at
Collector. Rtvorst Current
Colletler-lne Ireakdown Voltage
»CK>
WCEO
Collector-Emitter breakdown Voltage
Emitter-Base Breakdown Voltage
"Eio h ob
A-C Common-Base Output Admittance
fc
A-C
rb
Common-law
»ct
20v
l
SOjuo
l
Vc.= »C.= »C.=
Reverse-Voltage Transfer Ratio
A-C Coflimoa-Base Forward-Current Tramftr Ratio
"fb
I
«E
A-C Common-Base iRpul Impedance
"ib
»c.=
20»
= >c = = •c = »Ci =
I00
M.
l, l
»>
lg
1
20v
l
1
20 »
l
20*
l
Sv
l
0-C Forward-Current Transfer Ratio
K\
A-C Common-Emitter Forward-Current Transfer Ratio
Vc
,=
20 v
l
fab
Common-late Alpha-Cutoff Frequency
»C.=
20 v
l
Common-lose Output Capacitance
»CI
20 »
l
r
CEIS.ti*
min
=
'•=
0-C Common-Emitter Saturation Resistance
= E = IA = 150° t E = E = =0 c = — ma t= lkc = — ma 1= lkc E = — ma = lkc £ — ma = = E c — 10 me = — ma = mc E = — ma E = lm = E
SO/io
»« =
"fe*
1
1
f
1
f
1
ki
v
mo
to
+150°C
(unless otherwise noted)
toit condition!
param«t*rs Collector Reverse Current
mw
125
Advanced Temperatures)
Storage Temperature Range
l
1
1.5
1
1
=
10
unit
M« M'
1
100
4S
V
30
V V
1
30
ohm
60
50 0.2
300
1
fitnkt
2000
xlO-*
-0.99
-0.975
150
45
80
20
24
db
20
30
mc
l
c
max
typ
mo
2
3
M
ISO
Mjuf ohm
switching characteristics Tern-on Time [Includes delay time
(l
d )j See Test Circuit
Storage Time Fall '
Time
ThtH poromtiri mutt •• nwoiurtd
pulu Hchnlquei. PW
using
=
300 /UK, Duty Cycle
o.os
jU>«
0.02
j[i»K
0.01
JlSK
< 2%.
test circuit 3
IISC4C
-*\
90%
_±
t„„+t.
+
t,=t,
"T-JI^" PRINTED IN USA.
4-14
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
Tf
cannot assume any responsibility for any circuits shown
or
represent
that
they ore
free
from
potent
3? ,
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO HARE CHANCES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N339 THRU 2N343
^
N-P-N GROWN-JUNCTION SILICON TRANSISTORS
Watt at 25°C
1
BULLETIN NO. OL-S 733955, JUNE 1963-REVISED MARCH 1973
Com
Temperature
Destined for
Audio and Servo Amplifier Applkatiorts
mechanical data The
transistor
weight
A
is
an welded package with glass-to-metal hermetic MEDEC TO-11.
in
is
seal
between case and leads. Unit
approximately 1.5 grams.
non-insulated mounting clip
(Tl
cadmium plated
beryllium copper,
P/N 10-31-052-006)
— gold
AIL LEADS ARE INSULATED
1
'
'
Material
is
ouniNf lONf OOTIONU'
ciTAiis or IN THIS
i
,
transistor.
FROM THE CASE
lTcne
0.110 fi
provided with each
is
iridited.
w
„<">'«
"l-r-f 1
0.0M i
0.M0
x
O.0OS
-J o.oof
AU DIMENSIONS absolute
maximum •Collector
-
o.i
as
J==j JL MX
I.S
J
IN INCHES
ratings at 25*C case temperature (unlets otherwise noted) Current
60 ma .'lOOOmw 400 mw \ 200 mw -65° to + 150°C -65° to +175°C
*Total Device Dissipation (see note 1) * Total Device Dissipation at 100°C Case Temperature (see note 1) *Total Device Dissipation at 125°C Case Temperature (see note 1) •Storage and Operating Collector Junction Temperature Range
Storage and Operating Collector Junction Temperature Range
•electrical characteristics at
2N3M foot candrlioao
CoHortoi ColoN
Corml
'c»0
Colloetor Cutoff
Comal
Guarantee)
•
•
•
25°C case temperature (unless otherwise noted)
parameter 'coo
(Tl
,
= 30»
¥c,
l
»C1=»«
min
= | =•
'«
c = +1S0-C = c = » pa
2N340
2NS4I
2N242
2N243
mm max
mm max
nrl
max
mm max
I
1
1
1
1
M"
ISO
250
ISO
2S0
250
*•
min
max
T
,VC0O
CoHoetor-Ooro
OrooMom
l
l
e
IS
OS
lis
a
M
V
a
OS
OS
M
M
V
1
1
1
1
'
*
Voltaao
"CEO
follocior.Eoilllor
"too
EalllH-ira
'CIMI
K CoModor-EarHor
„,
AC Cawalio low Forward
o
AC Conmon-loH lapot
c
i
=
in pa
i|
=a
Onatdowa Valnf*
OrooMom
l
E =
IN mo
l
c =
Voltoil l|
= 3 ao
l^
= 10 mo
NO
ISO
400
ISO
M0
oka
Saroraiioa IoiIiIoko
Corratt Transfer tatio jb
AC
Comom-Iom
Outoul AdaiitloKo
o
A
AC CaaoMM-oalo tavoru Vollaaa Tranfor lollo
NOTE
1:
For kKrooMd dlnloolloo
•Motto JEMC
coooolllty
(ol
1=
=
10 »
l
e = -J ao
-o.t
-o.t
-o.w
-*.f
-o.tot
-o.t
-o.t/
-o.tu -0.0M
E = -5«o
M
30
M
N
N
f = -Jao
1
1
2
2
2
= _5ao
M0
300
ON
ON
J10-*
ilO-'
i!0-»
l
l
l
E
1
olmM
-O.flt
Ike
c ,= !0» 1= lkc Vc , = 10. 1= Ike Ve , = U, = Ike «
ImooiaKO
^
Vc ,
taooorotora)
o»orootoofl
b> Tarn Instromooti, too DiHlpolHM OorolMo
Com
oka
>mmVo
SN •I0"»
o>
pot
J.
roohtorod data
1078
TexasINCORPORATED Instruments POST OFFICE BOX S012
SILECT t TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A •
f
•
A6T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration A8T404, A8T404A Have Same Outline and Bating as Motorola MPS404, MPS404A
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light. ABT404, A6T404A |__0.0»
T~
0.IM
sO.010
O.MOMIN
1-COUICTM
Lnd
diameter It not controlled In this am. B. Leads having maximum diameter (0.019) thill ba within 0.007 of thalrtrua positions maaturad In tha gaging plana 0.054 balow tha Mating plana of tha davlca ralatlva to a maximum-diameter paekaga. C. Alt dimensions ara in Inches. A.
A8T404. A8T404A
-•. to- S.OSO (N01I A)
0.300
+ aot» -0.03S
i_
.
COUKTOff.
-
0AM
.wunn -3 UAOS
NOTES:
0.017
?
*aoo?
A. Lead diameter Is not controlled In this area. B. All dimensions are in inches.
ALL JEDECTO-92 DIMENSIONS AND NOTES ARE APPLICABLE absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
Collector-Base Voltage
A5T404 A8T404 —25 V -24 V -12 V
.
.
.
.
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
A5T404A A8T404A -40 V -35 V —25 V
Continuous Collector Current •> 4 150 mA Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) * •» 625 Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3) » < 1.25W Storage Temperature Range *--65°C to 150°C— Lead Temperature 1/16 Inch from Case for 10 Seconds e> + 260°C NOTES: 1. These values apply whan the base-emitter diode It opan-clrcultsd. 2. Oerete linearly to 150°C free-air temperature at the rate of 5 mW/°C. 3. Derate linearly to 160°C lead temperature et the rete of 10 mW/°C- Lead temperature is measured on the collector lead 1/16 inch
mW
.
from the
.
cese.
'Trademerk of Texas Instruments tu.S. Patent No. 3,439,238
USES CHIP P14
373
Texas INCORPORATED Instruments POST OFPICI BOX M12
The input waveform has the following characteristics: t r *£ 1 ns, tf < 1 ns, t > 5 ^s, duty cycle < 2%. w Waveforms are monitored on an oscilloscope with the following characteristics: t < 4 ns, R > 100 kn, r in O-T < 1.8 nC when the transistor turns off monotonically as shown by the solid line.
Cj n
PRINTED IN U.S.A. Tl
cannot assume any responsibility lor any- circuits shown
or
represent
that
they
are
tree
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE REST PRODUCT POSSIBLE.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
BULLETIN NO. DL-S 733190, OCTOBER 1962-REVISED MARCH 1973
Designed for Medium-Power Switching, and Pulse Timing Circuits
Oscillator
• Highly Stable Negative Resistance and Firing Voltage • Low Firing Current • High Pulse Current •
Capabilities
Simplified Circuit Design
'mechanical data Package outline
is
similar to
JEDEC TO-5
All LEADS INSULATED
except for lead position. Approximate weight
NOTES
FROM CASE.
A.
This zone
matic
•0U1UM
is
one gram.
is controlled foi auto-
handling.
The
variation in
actual diameter within this zone shall
not exceed B.
010
Measured from max. diameter of
the actual device,
C.
i
The specified
lead diameter ap-
plies in the zone between
050 and
0.250 from the base seat. Between 0.250 and 1.5maximum of 0.021 diameter is held. Outside of these zones the lead diameter is not controlled.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED.
*
maximum
absolute
ratings at 25°C free-air temperature (unless otherwise noted) 150°C Junction Temperature
Emitter-Base Reverse Voltage below Interbase Voltage
RMS
Emitter
Current
Peak Emitter Current below 150°C Junction Temperature Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Total Device Dissipation at (or below) 25°C Free-Air Temperature, Stabilized (See Notes Operating Temperature Range Operating Temperature Range, Stabilized (See Note 4) Storage Temperature Range Lead Temperature K« Inch from Case for 10 Seconds
NOTES
maximum
interbasa voltage see Figure
I.
For
2.
Derate linearly Is 140°C frit-air temperature at the rate of 3.9
3. Derate linearly le
175*C
1
free-air temperature at the rate of 4.0
mw/°C. mw/°C.
4. Total interbase power dissipation must be limited by external circuit.
* Indicates
4-20
JEDEC
registered data.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
60 jr See Note ^1 70 ",a
3, 4)^
.
J Kn 450 600
m mw
_65 °^ ,0 ]^° ? -rjj^CfolnC - 65 C to '75 C 2
TYPES 2N489 THRU 2N493. 2 N 48 9 A THRU 2N493A. 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
by means of the equation: V p TJ about 0.36 volt at 25°C and decreases V,,,
with temperature at about 2 millivolts/deg.
used to measure TJ is shown in the figure. In this cirR 1r C, and the unijunction transistor form a relaxation oscillator, and the remainder of the circuit serves as a peak-voltage
The
circuit
cuit,
detector with the diode D, automatically subtracting the voltage
VF
.
To use the
adjusted to
button then
is
the
circuit,
make
"cal"
the current meter
=
M
t
1
TJ
qnd
pushed,
is
read
and the value of
released
the meter, with 71
button
full is
Rj
is
Kale, The "cal"
read directly from
corresponding to full-scale deflection of
100 pk. D,:
100 pa
VF
F.S.
Ir
FIGURE
5
— TEST
CIRCUIT FOR INTRINSIC
STANDOFF RATIO
1N457, or equivalent, with
= IMS V < » t* «»
ot If.
l
= 50 = »1 F
Hu
following choroclirhtlis:
/jA,
fa)
PRINTED IN U.S.A.
*V22
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
Tl
cannot assume ony responsibility
or
represent
that
they ere
free
lor
Irom
;
ony circuits shown
potent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIM PRODUCT P0SSIBL1 IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST
= = 0, Sm e = M ma, e = 100 ma, R H = 10O, Sm = IN iu, c = = ma tWlMWIl. =• »CI = '» = T A = 1J0'C , cl = 30t, =e v cl = «u, = T A = IS0'C V C , = M», R„ = 100 y c| = M V„ = c = V rl = e = M V CI = c = 100 M» Sm nw, V ci = 10 c = Vc, = c = M ma, T A = - SS'C
Colluttt-loM Ireokdwn Vallac*
I
Cellecler.Rmltter Ireokdewn Vallagu
l
ValKf*
l
Ccllecter-Emllter IrMkdaurri
c us IN
jiu, I,
Emitter-late Ireakdawn Veltage
Data 1!
Except
1,
Static Feru/ard
S ,,
Curnnl
Tranlflf Rati*
Sh
late-Emltter Valtafa Collector-Emitter Saturation Voltage
25 °C Free-Air Temperature (See Note Indicated in Parentheses)
»
(3)
Total Device Dissipation at (or below)
(See Note Indicated in Parentheses)
>
0.6
0.4
t
t 7
(5)
(
)
3.0
2.0
1.5
t
t
*
(4)
(*)
(8)
25 °C Case Temperature
I.
This voluii applies
t. Thli values applies 3.
Ootalo linearly to
when tin base-emitter
milium
when the bass-emitter diode
200*C fiM-otr temperatera
Is
(l
K
)
Ii
eqeel to or lost thou 10 •
Hn
Dorato linearly to JOO'C
5.
Dorato linearly to 175*C free-air totnporalwo at
rata of 17.2
Nw
17S*C
Dorato linearly to 175°C caso tomporatura at tho rata of 10.0
9.
Dorato linearly to 200°C free*lr temperature at tko rate of
0.8
(»)
1.8
1.8
(10)
(10) to
(10)
(3)
(3)
3.0
3.0
t
t
(4)
(4)
w
200°C
*Texao Inttrunwnto guorantsao that* dovicae
in
TO-39 packagno data-codad 7326 or highar to bo capable of Incraaaad dissipation ae follow 0.8 at Ta < 2S°C derated linaariy toT^" 200° C at the rata of 4.57 mWTC. or 10 at Tc < 25"C (5.71 at T C - 100°CI derated linaariy to Tc - 200° C at tho rate of 57.1 mW/°C.
W
W
W
tfiaaa davioas ie
Imtrumenti guaranteao its types 2N719 and 2N720 to be capable of the earn* dissipation as registered and shown for typos 2N719A, 2N720A. 2N870. and 2N871 with appropriate derating factors shown in Notes 9 and 10.
t-Texas
mw/°c. l.U mw/'C.
case temperature at the rate of 10.3
•JEDEC registered data. The JEDEC registered outline for
0.8
UmporatiHi at tin rata of !.a7 m»/°C.
I.
IM'l
1.8
mw/°C. mw/°C.
7. Dorato linearly la
10. Dorato linearly to
(»)
rata of 4.0
I7S*C
0.5
w (»)
mw/°C.
t. Dorato linearly to
frao-alr
0.5
epon-iiraiiteo'.
at tko rata of 4.57
4.
0.5
0.5
—05^
Storage Temperature Range
NOTES:
7
1.0
Total Device Dissipation at (or below)
UNIT
mw/°C.
TO-5.
TO-39 fallo within TO-5 with tho exception of lead
length.
USES CHIP N23
TexasINCORPORATED Instruments POST OFFICE BOX SO 12
25"C free-air temperature (unless otherwise noted) 2N7I7 2N730
TO-IS-o
PARAMETER
CONDITIONS
TEST
TO-5-*
2N«M
2N7IS 2N73I UNIT
2NW7
MIN MAX MIN MAX MIN MAX MIN
= = 0, 100 ma, R K = 101), 100 c = ma 2N717.2N718: E = = V c ,= »v, E T A = 1»*C V c , = 30 E = = V Ci = Mv, E V« = ««. = 'A = '»°t R K = 100 kil V CE = 20 'C = • »H = V CE = ' >C = M = c = IN /u ma, V CE = c = T A = — 55°C ma, V CE = 10», c =
= 3» an. = n. c = 1M M t K = E = IN 11, c = t =t »CI = » t = Vc, = N =t E »CI = « V c , = »' f = t K = im «n va = a »«• = *'. 'c = » Ma c = »c = »Ct = » c = IM an. »« = " c = aw, »„ = M c = l
Colltttor-tos* Voltage Collector-Eniltter Vortofe (See
Emitter-Ian Voltage Collector Currant
1.0
Total Dtvice Dissipation at (or below)
25 °C Free-Air Ttmporahira
(Sm Nott
t
Indicated in Parentheses)
>
(3)
Total Device Dissipation at (or below)
3.0
2.0
1.5
t
t
t
(4)
(6)
(8)
25*( Cast Temperature (See Nott Indicated in Parentheses)
>
w
m
I.
TMl Mleai apalUl wImi
2.
Tbli
3.
tareta linearly to
Irion
epallei ariwn
4. Dtrete Haaerl* to 5.
IIm BMe-eaiittor
mlltoMt «aet
easa-aaritter
no'C Mt*C
traa-alr tomeeratera »l
Iraa-air
im tomperelera M
tenia
llaterl r to
I75*C
linearly to
I7S*C casa laaueretera et
a.
Omto
terete Ibeerlr to 17J*C free-elr teragereian) at
tenia Haeerh/'to 17S*C
».
Oirato llaearlr to
10. Dirato llaanlr to
)
il
aeral
M
•> Itn then 10
to
Mm iim
tf 4.57
ef 17.1
cm toaaiefetwa at toawantan
IO0*C caw lemeanrere
ma lee
at
rate ef 13.3
Hw
rtlt et
ten
Hw
I
f Taxas
n«/°C. mw/°C. mw/°C.
IV
(10)
3.0
(3)
3.0
t
t
(4)
(4)
w
Inatrumanti guarantees thasa devicae in
$Texas Inatrumenta guarontaea ha typaa 2N719 and 2N720 to ba capable of tha aame diaaipation ai regiatered and ihown for typaa 2N719A, 2N720A, 2N870. and 2NS71 with appropriate derating factors ahown in Notea 9 and 10.
l.M m»/'C.
al Ida rata at 10.3
1.8
(3)
TO-39 packages date-coekKl 7326 or higher to ba eapaMa of incnMeed dissipation aa follows: O.S «V at Ta < 2S"C daratad Nneoriy to T^ - 200"C at tha rata of 4.67 mWVC, or 10 W at Tc < 2S'C 15.71 W at T c - 100 CI daratad linearly to T c - 2O0° C at tha rata of S7.1 mW'C.
wm/'t.
at 10.0 aiw/»c.
rail at
(°)
200*C
epaa-circaM.
Hw ran
I.
fraa-ali
M
(l
(10)
mnoeralara at lea rata ef 4.0 mw/'C.
7.
IM'C
il
1.8
(10)
—6S°C Hw
(»)
1.8
Storage Temperature Range
DOTES:
0.8
t (?)
(5)
UNIT
anr/*C.
MEOEC regieterad data. *The JEOEC regletored outlirw for lhaaa devioae ia TO-5. TO-39 (alia within TO-5 with Mia exception of toad length.
temperature (unlaw otherwise noted) TO-10>» 2N7M 2N720A 2N070
free-air
H$T CONDITION!
JN1DW
TO-3**-
MIN Colltctir-ltM I
c
=
I
c
= Nm,
MlKtor-Emltttr
'l"Kao
UuMmm Mil* CillKt«-Eaitt«
»l«|Ct*
IriaMm Mttfl EaltKf-OaH
*IMMO InaMm
KtlHi.
100/M.
I,
=
1,
=
lulUill
0,
= IN M, IH = 0, Sh Hot. = 100#M, c = t = 1-., C = I = »CI = *I,, = Va = Ml, T A = l»*t » =l C| = 75», »c , = 75 = IA = ISO'C E V c ,= »l«. =• = VC1 = I0«, TA = 1S0»C »„ = !,. e = | '<==• ¥,. = 5,. »« = >•». c = m/M ¥^=11,, e = ltM, S« fell y^slO., c = 10m, TA = -5S*C l
10
c
l,
I
l,
I
MAX MIN
lit
00
11
MAX
MIN
IM
100
100
00
M
M
100
to
00
;
7
7
f
t 200
0,
1"
lj
C»ll«ttt Cuter! Cvrnat
I^IO
¥,
1,
l
0.010
0.010
IS
IS
M" iu
m f m
0.010
!,
l,
MAX
2N1WO UNIT MIN MAX
s
l,
l|
2NS7I
1N1M9
15
0,
l
'M
Emllhf CateH CmubI
0410
i
II
l
Sink F«winJ Timftf Mil
'k
Currtnl
i
Sh
VH
lait-ExIrNr
Mlt*
CollKlv-Eaitta
»CII»t1
SalarallM Vitafi Saull-SlBiil
Input
InpttoK*
Sntll-SlfMl
CMMIMiVMM
,
Imin
rt
Small-Signal
= IO», = Sum,
Ovtpwt MnlttaiKt
Smll-SlfMl
Cmni«vEnhter *>
Ftnnri CwimI
TimiIh litM
= 150m, SmIMiII = M«w, s« fete c = IHh Snltete c = M im, Sn Noli c = IMuhv S« fell = c = nw, = = M. c = c = M
V cf
l
c
1,
i
c
l,=
15a»,
l
= M, = tlM, V CI = 5 «C| = 1,
5
l
l,
l
».
11
»,
IS
IS
M
It
|
1 lie
1
1
kt
,
1
|
kc
m.
»
1
kc
= In, = '"».
1
=
l
V C|
»CI
= S«, = '•»>
1
c c
l
=
5
1
=
**
= Ike
c
=
lm,
I
10 ¥,
l
c
=
Smt,
f
= Ike
10
l
c
= SO m, = 10 mi
IS
45
I.S
MO t.l
¥
1.1
1.1
1.1
¥
1.1
1.1
1.1
¥
5
s
5
1
10
to
10
4
1
4
1.15 «
ii*
0.1
100
0.0
10 1.5
110
0.0
N
ll
l
a = S», V Cf =
5
10
40
110
l.S
I
to
10
N
*»
4
1
•SRI
1.15 >
1.5 «
10-4
10-*
1.5
10-4
lf«
= lk« = lkc
'c
i
41
1.1
11
1
»cl
110
11
5
l
10 ¥,
11
I
= Ji,
40
11
l
»c ,
CMiiiiM*lon
k~k
M
fell 11
¥•!!«•
Tranter l«1i«
0410
0.010
N
<
l.S
i
10-*
I0*
0.5
o.s
0.5
0.1
jumbo
1.0
0.5
0.5
0.1
/**«•
100
M
100
so
100
45
45
ISO
70
HO
1.S
l.S
JO
100
Smoll-Slfnal .
CMimm-EiiiHtw
I
'"<•'
Fimri CwtmI
a=
V
>,
1
1.0
Traiibr Ratio
unnM'HM
C^
Opw-tlroll
»Cf
=
10 »,
1,
Elap) Oulpat CtSKltaici
(oimuqr IQii
C)B
V„
OpM-Clrcnlt Input
NOTE Hi Tlwtt Hraatttm <»wl kt width mwt bt web
Mm
=
0.5 »,
l
c
Eiapt
Copullaui
=
0,
HmOi
=
0,
tm>,
wlHi |wIm ttxhnlquM, PW tf dMbllRf (MM tWt
rMhrfftf
(
f
= =
1
mc
140 kt
l=lm = 140
IS
IS
IS
n
05
OS
OS
IS
tl
kt
1
S 300 put., HUM
N
I
<
2%. irHMT tkM Hw
Duty cyclf
ChflBft
raqotnoj tccuracy «f tht
'lntHntM JEDCC n|litand dtn.
PRINTED IN U.S.A.
Instruments Texas INCORPORATED TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSHIE.
FOR MEDIUM-SPEED, MEDIUM-POWER, GENERAL PURPOSE AMPLIFIER APPLICATIONS •
fj
.
.
.
60
MHz min
(2N722)
'mechanical data
THE COLLECTOR
ELECTRICAL CONTACT WITH THE CASE
IS IN
'""MR""-!
m-I I-
mio
am
MA
M*
,
f
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE
'absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
-50 V -35 V -50 V
Collector-Base Voltage Collector-Emitter Voltage (See Note
1
)
Collector-Emitter Voltage (See Note 2)
—5V
Emitter-Base Voltage
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 3) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 4)
Lead Temperature 1/16 Inch from Case for 10 Seconds
1.
This value applies
2. This value applies 3.
Derate linearly to
4. Derete lineerly to
'JEDEC
1.5
-65°C
Storage Temperature Range
NOTES:
0.4
to
W W
200°C 300°C
when the base-emitter diode is open-circuited. when the bate-emitter resistance Rqe < 10 fl. 175° C free-air temperature at the rate of 2.67 mW/°C. 175°C case temperature et the rete of 10 mW/°C.
registered data. This data sheet contains
all
applicable registered data In effect at the time of publication.
USES CHIP P20
4-34
Instruments TexasINCORPORATED >OST OFPICC BOX M12
•
DALLAS, TEXAS 762*2
TYPES 2N721. 2N722 P-N-P SILICON TRANSISTORS 'electrical characteristics at
25° C free-air temperature (unless otherwise noted)
v (BR)CBO v (BR)CEO V (BR)CER
Collector-Base
-100mA, E= -100 mA, B -0. c = -100 mA, r be - ion. V C B--30V, E = V CB = -30 V, E = o,
Breakdown Voltage
Collector-Emitter Breakdown Voltage Collector-Emitter
Breakdown Voltage
IC =
l
IC =
l
MIN -50 -35 -50
See Note 5 See Note 5
l
2N722
2N721
TEST CONDITIONS
PARAMETER
UNIT
MAX MIN MAX
V
-50 -35 -50
V V -1
-1
l
Collector Cutoff Current
ICBO
Base-Emitter Voltage Collector-Emitter Saturation Voltage
Ib =
Emitter Cutoff Current
'EBO
Static
hFE
Vbe v CE(sat)
Forward Current Transfer Ratio
Small-Signal
hjb
Small-Signal
hrb
Common-Base
Reverse Voltage Transfer Ratio
Small-Signal
h b
Common-Base
Output Admittance Small-Signal
hf e
Common-Emitter
Small-Signal
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit
Cobo
Common-Base Open-Circuit Cibo
Input Capacitance
NOTE
registered data
IC =
-150mA
-1.3
-1.5
-1.5
1
kHz
=
1
kHz
— 1 mA.
f
=
1
kHz
C _ _g mA,
f
=
1
kHz
-1 mA,
f
»
1
kHz
1
1
IC= —5 mA, IC " —1 mA,
f
«
1
kHz
5
5
f
=
1
kHz
15
f
=
1
kHz
20
30
f
= 20 MHz, 2.5
3
IC =
V CE
Ic = IC
—5 mA - -50 mA, .
25
V V
35
25
35
-
V CB = -5V, V CB =-10V, V C E = -5V, =
90
30
-1.3
f
I
-10V.
45
20
f
C = -1 mA, —5 mA,
V CB
=
See Note 5
mA
25
15
IC =
IC =
n
10
10
8x
8x
10-4
10-*
8x
8x
io-«
10-4 jjmho
25
50
100
- 1 ov,
lE-0.
f
=
1
MHz
45
45
pF
V EB = -0.5V
tc = o.
f
«
1
MHz
100
80
pF
=
___^
These parameters must be measured using pulse techniques.
5.
•JEDEC
-5 mA
V CB --5V,
v CB
Output Capacitance
IC =
I
-10V, Vce = -10V, T C =25°C
Forward Current Transfer Ratio
Nel
—15 mA,
V CB " -5 V, V CB = -10 V,
Common-base
o
IC = -150 mA, See Note 5 IC"=-150mA, See Note 5
l
Input Impedance
ic =
-100 -100
-100 -100
T A =150°C
i
V EB = -2V. V CE = -10V, V CE = -10V, B =-15mA,
MA
w
t
= 300 m*. d u*V cycle
<
1
%.
——__^-———-^—^-—
THERMAL INFORMATION
5
E 500 c o
CASE TEMPERATURE
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
DISSIPATION DERATING
3
CURVE
1.6
I
I
•2
1.4
2
1.2
CO
a.
400
'to in
o
a
3
8
1.0
\
300
N
0.8
£
200
•?
o E 3 E
\
0.6
o E 100
0.4
E 0.2
'5
5
(O
2
I
I
25
50
75
100
125
150
T A -Free-Air Temperature—°C FIGURE
1
175
200
25
50
75
100
125 150
175
200
Tc—Case Temperature—°C FIGURE 2
PRINTED IN U.S.A.
Instruments Texas INCORPORATED MAKE CHANCES AT ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO SUPPLY THE BEST PRODUCT POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO
BULLETIN NO. DL-S 693471, MAY 1963-REVISED AUGUST 1969
Highly Reliable, Versatile Devices Designed for
and
Amplifier, Switching
from <0.1
* mechanical
ma
Oscillator Applications
>150 ma,
to
•
High Voltage
•
Useful h Ft
•
dc to
30 mc
Low Leakage
Over Wide Current Range
data
Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and
2N956
are
in
Device types 2N696, 2IM697, 2N1420, 2N1507, 2N1613, and 2N1711 are
JEDEC TO-18 packages. JEDEC TO-5 packages.
in
Q THE COLLECTOR
TO-18
IS
IN ELECTRICAL
CONTACT WITH THE CASE
TO-S TO-5
TO-18
maximum
absolute
rating* at 25 °C free-air temperature (unless otherwise noted)
2N717 2N718A 2N730 2N731 2N718
2N696 2N697
2N1420 2N16I3 2N1711 2N956 2NIS07
UNIT
Coll«ctar-BoM Voltage
60
60
75
60
75
60
75
75
V
Collector-Emitter Voltage (See Hots 1)
40
40
50
40
50
30
50
50
V
5
7
5
7
7
Emitter-Base VoHoge
7
5
5
Total Device Dissipation at (or below)
0.6
0.4
Parentheses)—»-
Total Device Dissipation at (or below)
25°C Case Temperature (See Note Indicated in
*
Parentheses)—
Total Device Dissipation at
Hi! mloo
applies
wtM
tho basa-vmlttar
value
applies
whon
th«
free-air
3. Derate
linearly
It
17S*C
llntorly
lo
175*C ton
tt
t
(»)
(7)
(3)
(10)
(10)
2.0
1.5
1.8
1.5
1.8
2.0
3.0
3.0
t
tt
tt
Dtratt linearly to 17S*C
<«)
<«)
(*)
(»)
(4)
(11)
(11)
1.0
0.7S
1.0
0.75
1.0
1.0
1.7
U
w
t
tt
175t
175tt
200
200
•C
minora (In)
haso-omltter diode
tt 200
It
eqoal
t
175tt
200
—«5°C to
or
less
to
175t 200°C
fTaxao
Is
lartruttMttts
gwaraataM
tin
ran
of
4.0
mw/C*.
Impotolura ol tho rati
of
13.3
mt/C*.
timperatoro ol tht
toaporaroro ot Iko toto ot
ttmporaton at tho roto
ot
ran
ol
lintariy
lo 17S*C
linearly
to
Dorato
llneorly
to
2N*C hto*lt 2N*C coto
*. Dorato
linearly
to
17S*C fm-alr temperature ot tho rata
taaiperatwo ot
tho
taaperatore ot tho toto of
10. Dorato
llmoriy to 200*C fnt- air temperature at tho
11. Dorato
lliuarty
to
W*(
com
tmpontwo
at
1MM,
Hi
at too
I* ko
open-circuited.
INI 611 factors
frao-alr
w
t
(4)
7. Dorato
•Indicates
w
(7)
«. Derate
0.
0.8
2NM7, IHMI0, and 1H1507
4. Derate 5.
a
0.8
(5)
10 ohms. 2. This
0.6
tt
Storage Temperature Range
1.
0.5
t
100°C Case Temperature Operating Collector Junction Temperature
0.5
(3)
25 "C Free-Air Temperature (See Note Indicated in
0.5
V
1.0
1.0
1.0
Collector Current
i:
¥
32
Collector-Emitter Voltage (See Note 2)
tho
1.(7 10.0
mw/C*. mw/C*.
ft?**** lallivmaatt fwaraavm Its IN71S, 114710, and 1N711 to ka
1N71M aad INtSa
aw/C*.
of
1.33
rata
of
4.Si anr/C*.
rata
of
17 2
•orating
rm/C*.
1.M onr/C*. 10.3
aad 2141711 aritk aapraaitato shown la Nans 10 and 11.
la
arila
1M717, at
Mm
aaaroailate daraliag fac
NatM 7 aad
(.
m/C*.
JEDEC nfislorod data.
USES CHIP N24
4-36
Instruments Texas INCORPORATED POST OfPICe BOX 8012
DALLAS. TEXAS 78222
TYPES 2N696, 2N697,
2N717, 2M718, 2N730. 2N731
N-P-N SILICON TRANSISTORS
electrical
charactarUtlc* at as*C free-air temperature (unlets otherwise noted) 2N7IS 2N7I7 2N731 2N7S0 2N*97 2N6M TO-5-* MIN MAX MIN MAX MIN MAX MIN MAX
TO-IS-» TIST CONDITIONS
PARAMETER Ctllacttr-Oasa
OrtaUtwn Valtaas
= Ma. e = • 12 = 0, c = 30 ma. ma, I K = O, c = = 100 p», c = e = ma E ¥C| =J0.. t = = T A =1»'C V c , = 30.. = Y c , = *0», » , = a0». = TA = 1S0'C c «n rb = ia = jo - 'C = • »E1 = Ma 'c = »Ct = 1a = c = 12 ma, »a = c = ma, T A = — 55*C y ce =10«, c =
= ma, c = ma, c = ma, c = ma, c = 5 ma, c = SO ma,
I
l
l
S »,
l
10 »,
l
10 ¥,
l
5
c
l
t
¥t ,
=
0.S »,
l
c
l*clmla.a*i.
M
Sea Hota 12
Sat Nala 12
10 »,
pal»
,
Stt Halt 12
=
Cemmaa-loia Opoa-Circult 'lb
20
Sat Hoi. 12
ISO
ISO
l
l
Vc ,
Common-Oast Opoa-Clnoit Ontpat Capacitoaca
= ma. = 500 ma c = ISO ma, ma. c = = c = ma, = c = ma, = — «*, c c c
10 »,
Forward Carranl Trantfar Rati*
'*
Sta Holt
Sat Halt 12
V^
"
A"
,0
'• "•
Static Forward
/"
loo
S
Emiltar Catsff Carraat
«
/*•
0,
e
»,
Calltrtar (utoff Carraat
'cn
NOTE
1.0
1.0
l(
I
k
V
1
l
I
I
» t
l
l
VraJUFJO
to
Sat Halt
1,
UNIT
PW
=
5
f
1
=
1
mt
1
=
1
mt
1
5
1
1
1
0,
1
»
•km akm
ke
1
= = = = = =
1
1
0,
=
f
a
kt
1
1
kt
Mmt»
1
kc
Mmat
1 kc 1
kt
20
mc
300 /uat, Daty Cyclt
2.0
35
35
5 2%.
2.S
2.0
2.S
35
35
•1
00
00
Pl
Falsa widtk mast at sack tkat kalvlna tr doakling
i
ragolnd atcaracy al tkt ataisaramaat.
roalstarta lata
PRINTED IN U.S.A.
Instruments Texas INCORPORATED MAKE CHANCES AT ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO SUPPLY THE REST PRODUCT POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO
POST OFFICE BOX 5012
•
DALLAS, TEXAS 79222
4-37
TYPES 2N849, 2N850 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 6S2401, MARCH 1962-REV1SED OCTOBER 1965
DESIGNED FOR HIGHSPEED SWITCHING APPLICATIONS mechanical data The
transistors
are
a hermetically sealed welded package meeting the JEDEC TO-50
in
'AJZi
CASE OUTLINE
outline.
ALL LEADS INSULATED FtOM, CASE
* absolute
maximum
ratings at 25°C
temperature (unless otherwise noted)
free-air
Collector-Base
Voltage 25 v '.'.'...'.. 15 v Collector-Emitter Voltage (see note 1) Emitter-Base Voltage $v '.'.'.'.'.'.'.'.'.'.'.'.'.'. Collector Current SO ma Total Device Dissipation at 25°C Free-Air Temperature (see note 2) 0.3 w Total Device Dissipation at 25°C Case Temperature (see note 3) .1.2 w Collector Junction Operating Temperature 175°C Storage Temperature Range — 65°C to -f-200°C '
* electrical
25°C free-air temperature (unless otherwise noted)
characteristics at
PARAMETER Collector Cutoff Current
Icbo
Collector Cutoff Current
Icbo
Collector Cutoff Current
Icer
Collector Cutoff Current
l
EB o
= 15», V CB = 15v, V c = 25 V CE = 20 =S V c = 10 ma, c = 10 ma, c = 10 = 10 fia, Vce = = ma, U = mo, Vc.
v,
Emitter Cutoff Current
Breakdown Voltage
fV(BR|ca
Collector-Emitter
Breakdown Voltage
Collector-Base
Emitter-Base Breakdown Voltage
Forward Current Transfer Ratio
f fiH
Static
fVtE
Base-Emitter Voltage
fVcE{»t)
Collector-Emitter Saturation Voltage
1 v,
l«
Small-Signal Common-Emitter
Cgb
Forward Current Transfer Ratio
Vce
Common-Base Output Capacitance
Vcs
switch! ng characteristics at
1
= =
10
Turn-On Time
tol(
Turn-Off Time
1.
Storage Time
NOTES:
v,
I.
This value applies
3.
syndicates
Derate linearly to
JEDEC
10
fia
l
l
y
20
y
25
y
0,
f
y
5
2N849 2N850
20
60
40
120
0.7
0.9
y
0.6
y
6
f
E
db 5
1
Ib|2)
'
Circuit A)
y,
y,
Is,,,
a pulse duration of 300 miiroserondt and o
It
17S*C cose temperature
Any
2|
title of
Circuit B)
|
2 percent.
opotMlfcaltoal.
free-air temperature ot the rite of
at the rate of
Imu/'C.
Imw/^C.
registered data.
TexasINCORPORATED Instruments POST OFFICE BOX
MAX
CONDITIONS
TEST
= — mo = 3 ma, V cc = 3 K = 270 fl, (see lc = 10 ma, V Cc = 10 (see = |l„ = 10 ma R = inn. Willi
15
Pf
25°C free-air temperature
whan the base*mitlor diode
175"C
jita
l
l>li]
mound
J. Derate linearly to
fj.a
10
l
L
tT*Me poimtfn ana b»
10
E
l
5 y,
PARAMETER ton
/xa
l
l
1
1
'*'
M°
30
= TA = 150°C = R w = 100 kO c = = = 10fl R £ = c = c = 10 ma c = 10 ma c = 10 ma = -10 ma, = 100 mc = mc E = l
E
UNIT
lE
ffi
/iio,
|
MAX 0.5
1,
l
l
MIN
0,
l
l
Breakdown Voltage
VfUDcso V|K)ek>
'
y,
E.
Collector-Emitter
=
lE
v,
«
tV|K|CEO
1
CONDITONS
TEST
Icbo
SOI 2
DALLAS, TEXAS 7S222
2N849 2N850
UNIT
40
nsec
75
nsec
25
nsec
35
nsec
~
1
TYPES 2N849, 2N850 N-P-N SILICON TRANSISTORS
Circuit
a
c
-in(^
A
250
T T-
0.
-V*.
ST™'
«
"^ii
-^jr-** 7 0.001,
,0.001 0.01
—»-
0.01
—*0.1
X-
Jl
10*
EJ
X-
vL
xi
T
_1_
-'off Condition For
i
Condition* For t„ff
V M --4»
V.,.17*
V iB -*2lv
V,„
.-20.
INPUT
AND OUTPUT
WAVIfOKMS
PULSE
1
tlRCUIT B
7" "Oil.
0.1
IK
^€T
-In(&
0.1
—»-
0.1
:»a
-K—
**
^'t-
10%
10
1
—
WISE VlAVEfOI AT POINT
\
-4,
r'
"
A"
'1*!%
I
_L
"..-J
INPUT
NOTISi
)
Mch
Pulto rlw tlnw .)
•Main
Wflf) aro ploe«l acron
circuit ii 1
n*»c.
tho
powor lupply torminali
fuppllod by a Model 309 Lumotron
PW
>
400 mac. Duty Cycl.
to
Atorcury-Rolay
V cc and V„. Puis.
Gonorator
(Z„,
= JO
5 "»•
Output wawfornn or. monitored by o Model I2-A» lumotron Sampling
OkMokopo
(Z ]n
= SO
0,
H»
llm.
<
0)
or
oquivalont.
l.iec)or eo.ulvolenf.
JEDEC «,«!«•« •*•
PRINTED IN U.S.A.
373
chum m»
II
tminl
•r
rtprntnt that Ihty
i«p«si»ilit»
an
fret
l« any
from
pgltnl
ciroiifc
ihwn
infrinjtmtnl.
iight to make changes »t ant time
irsnutKHTS iesems to POSSIBLE OROER TO IMPROVE DESICN AND TO SUPPLY THE IEST PIODUCT
uxk IN
S
WAVIFORMS
0.1 w, HFK.
Decoupling capacllon
d) Tho Input to
PUIS!
pi
AH capacrrancM In mitten £T%,
b) All c)
AND OUTPUT
Instruments Texas INCORPORATED •OtT OFFICE BOX MIS
•
DALLAS, TEXAS
7MM
4-39
TYPES 2N851, 2N852 N-P-N SILICON TRANSISTORS BULLETIN NO. OL-S 662400, MARCH 1962-REVISED SEPTEMBER 1966
DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS 'OUTLINE
^
DlAWIM
i—--
maximum
'absolute
g
g
ft
—
ratings at 2S°C free-air temperature (unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage (see note 1) Emitter-Base Voltage
20 v !
5v
Collector Current Total Device Dissipation at 25°C Free-Air Temperature (see note 2) Total Device Dissipation at 25°C Case Temperature (see note 3) Collector Junction Operating Temperature
Storage Temperature Range electrical characteristics at 23*C PARAMETER
l» miaiurid with o pulu SurallM of 100 mliroMMidi end • doty eycli of
0.85
1.1
A
a> jl^l as 10 ma
J
Pt
MAX
UNIT
16
nsoc
12
met nsoc
2N851
24
2NB52
24
nssc
2N851
40
met
2N8S2
45
nsoc
2N851
14
nsoc
2M852
18
usee
B
pmml.
». Strata llaoarly to
175'C frn-olr tmporotoro at raa rato of I mw/'C.
I. Sorati llnmrly to
17S*C
«h
ttmpiroturo ot tho rato of I
ngiifarad data.
TexasINCORPORATED Instruments post office sox sou
.
iu iu IM
5
2N851
= -55'C T* = -55°C Ta = I70»C Ta = 170°C
A
In Circuit
fin
v
T*
Turn-Off Time l
TThm
mo
hi Circuit
UNIT
V
IcsxlOmalnQrcult A
10
+ 200*C
20
'switching characteristics at 23'C free-air temperature PARAMIT1R TUT CONDITIONS Turn-On Time
to
12
0.65
f
Dallas. Texas
nu
w w
175'C
l,
lc
v,
1
= Is = li = li = =
Small-Signal Common-Emitter
,
=
0.25v,
Vci
fVii
tV M
1.2
CONDITIONS
TEST
n
fh H
0.3
temperature (unlets otherwise noted)
froo-alr
V|at)iso Emitter-Base Breakdown Voltage
h
200 ma
—65°C
t Vimicio Cellecter-EiTiltter Breakdown Voltogt
12v
.
m/*C.
TYPES 2N8S1, 2N852 N-P-N SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION CIRCUIT
A
.C2
G
9 |
vV*
I!
auSBlJ
8.8W3 0.009
Y
10%
_v Hf—VW-S)
II
•4
0.003
Hf-
EH T^-
—*0.1
Vce
-t-
Yy,t
•Mull—
AND OUTPUT
INPUT
lc
lnu
mo*
mo*
mo*
w y
¥
= n
10
3
-1.5
-1.5
3.0
100
40
-20.0
-2.4
6.0
'Prior
WAVIPOMU
PUISI
CIRCUIT CONDITIONS Vcc
«.
«.
R>
*4
Ri
n
n
n
3.3 X
50
220
330l»l
56
t pn
IX
•f
",»
V|B.»
v«.
-3.0
1S.0
12.0
-15.0
-4.5
20.0
15.3<">
-20.0
"in. v
boM-mUHtr voUagi, "OFT' Hon.
CIRCUIT B
o
o.i
<$-
-HI-
-K
890
IK
0.1
fl.
-v»a
-youi
Hf-^vw-®
-
:
•
*
10 v
•»! a.
—
ft
-i
PULSE
I_
WAVEFOKM
AT POINT -A-
I
INPUT
NOTHi
AND OUTPUT
PULII
WAVVORMS
a) All capacitances In yuf. b) All resistors .)
d) e)
1 1%,
0.1 w, HPR,
Decoupling capacitor! QSfjit)
VM
pulsed for
J
except R2
an
Is
0.5
w
of
100 ma.
plocod across tho power lupply tormlnall to
V cc ond V n
.
keep cow temperature below 30 # C. The Input to each circuit It supplied by a Model 303 Lumatron Mercury-Relay Pulse Oenerator «„,, = 50 Pulse rise time* 1 nsec. PW 300 nsec. Duty Cycle < 2%. Output waveforms ore monitored by a Model 12-AR Lumatron Sampling Oscilloscope (Z|„=50 riss ii
1
sec at less then 10*4 duty cycle for
100 me t^,
to
>
f)
>3
0,
<
or
equivalent.
1nts«)or equivalent.
PRINTED IN U.S.A. Tl
tannol assume any responsibility for any circuits shown
or
represent
thai
they ore
free
from
palenl
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
time
fl)
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 5011
Dirati llnMrly ll JOO'C Iril-alr taneeraleri al tkl rail al
10. Oirali lliwerly la
fraa-elt
«m
IM*C
i
at
t
t
(4)
(«)
w
deirices
in
TO-39 packages date-coded 7326 or higher to ba capable of ineraaeed dWpatlon as follows: 0.8 V» at Ta < 25°C derated linearly to T A - 200° C at at T c < 25° the rata of 4.57 m«V/"C. or 10 at T C -100°CI daratad linaariv to 15.71 Tc 200° C at the rata of 57.1 mW/°C.
mw/°C.
W
W
aw/°C.
(Texas Instrumann guarantaaa its tvpai 2N719 and 2N720 to ba capable of the aame dissipation aa raglatarsd and drawn for tvpaa 2N719A. 2N720A. 2NS70, and 2NS71 with appropriate factors shown in Notes 9 and 10.
mm/'t. !.H mw/'C.
lamesrsters at !»• rati al lt.0
tele tMiaaratara at tbi rati al 10.)
3.0
3.0
*Texei Imtrumanti guarantaaa thaaa
mw/'C. m»/°C.
rati «l I.«7
Dintl
17S*C
l«> Inen 10
(3)
(3)
200 *C
the rati it 11.3 aiw/'C.
I.
175*C
ar
to
it tkt rati si 4.0
7.
ti
K
(10)
(10)
apse-clrcaim.
fin-elr ttmaifalari it lh« ran at 4.57
Strati llnarlir It 17S*C Itw-tlr
llnaorl r Is
niel
1.8
1.8
(10)
_45*C
(»)
(»)
1.8
Storage Temperature Kongo
MOTES:
0.8
0.8
w
m
7
(5)
(3)
0.5
0.5
0.S
t
t
Free-Air Temperature
(See Note Indicated in
0.4
0.6
0.8
Total Device Dissipation at (or below)
mw/°C.
•JEDEC ragWarad data.
the JEDEC registered outline for theea devices is TO-5. TO-39 fall! within TO-S with the astaption of
= 100 mi. l K = 10O, = 100 /u. c = = ma. 'c=« v . = ««. c E = l
c
l
E
l
MAX
120
M
See Note 11
l
Celfecfer Cutoff Current
'CBO
Emitter Cutoff Current
eso
1=M«.
= vc = Vc = vc1 =
l
»c.
"«.
,
«..
,
»'.
fc
«
Forward Current
l
120
100
100
,
M
M
M
¥
100
to
to
V
7
7
7
1»°C
0,
E
m..
0,
l
I
=
A
*» /*•
1»°C
1S0»C
l
0.010
0.010
15
IS
(«
pa
0.010
/»
15
M« f*
0.010
SnNoh
10
l
10,.
=
TA
/ia
l
»CE=">«.
¥
200
l
= »«. »EI = 5'. v ce = =
MAX
2NS71
2N1890 UNIT MIN MAX
2
=
TA
0,
=• = E = = E c=» 'c = « c = 100 ma, c = c = 10 ma.
*B
V CE
Transfer Ratio
=
MIN
If
10 »,
Static
E
2N870
2N1M9 MIN MAX
,
l
VC
2N720A 2N1S93.
5
1
E
otherwise noted)
=
TA
11
-55%
0.010
20
20
35
35
20
20
0.010
("
See Note 11
= 10,, = ma, = ma. = ma. = ma. » CI = S,,
V ce
v*
late-Emitter Voltage
Collector-Emltttr
V CE(Mtl
Saturation Volage
Small-Signal
l
If
5
l
1,
IS
l
l
5
l
IS
l
B
1,
l
Common-lose
"ib
Input Impedance
»«='•«
Small-Signal
Common-lose *rb
Small -Signal
Output Admittance
vc .
=
io,.
l
c
5,.
l
c
10,,
l
Small-Signal
5,.
n«.
a= »ct =
V
Common- Emitter »f.
Vc ,
Forward Current Transfer Rati*
11
1
1
1
kc
S
1
1
kc
1
1
=
5
ma,
1
1
1
=
40
11
120
40
120
1.3
11
ISO
l
Common-lose
"ob
11
See
See
5«.
= =
See
ISO
=
VC ,
150
c
»CI
Reverse Voltage Transfer Ratio
l
= ma, Mali = 50ma, Note ma, See Hoi. c = Note c = SOma, mo, in Noli c = = c = ma, = = ma, c = c = ma, c
11
I
20
30
20
10
4
ma,
1
c
5 ma,
l
c
=
1
l
c
l
c
l
E
o.?-
V
1.3
f
1.2
1.2
1.2
«
5
5
5
20
1
kc
1
= =
1
kc
ma,
1
=
1
kc
35
=
5 ma,
f
=
1
kc
45
=
50 ma,
f
=
20 mc
1.5
= =
140 kc
= =
140 kc
0.1
30
20
1
4
1.251
10-4
ah.
1
ofcm
10-« 1.5 i
1.5
10-*
10-4
¥
30
1.5 I
10-<
1.5
io-<
= =
IN
1.3
4
3l kc
100
1.3
1.251
2.5
120 0.1
30
kc
1
40
0.1
10-4
0.5
0.5
0.5
0.3
,UJIllM
1.0
0.5
0.5
0.3
larium
100
30
30
100
50
200
45
45
150
70
300
2.5
2.5
100
Small -Signal
Common-Emitter
K\
Forward Current
V CE
=10..
V c|
=
3.0
Transfer Ratio
Common-lose Open-Circuit
Cob
10
,,
=
0,
Eiapt 2N720:
1 f
Output Capacitance
Common-lose
V E1
Open-Circuit
=
OS
,,
=
0,
1
Exnpl 2N720:
1
l
c
Input Capacitance
NOTE
11: These parameters
Pulse
must be measured using pulse techniques.
PW
^ 300
1
1
mc 20
15
IS
IS
»f
05
05
15
IS
P'
mc
/tsec. Dirty cycle
S.
width
must be such that halving, er doubling does net cause a change greater than the required accuracy of the measurement. 'Indicates
JEDEC
registered data.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX 9012
•
DALLAS. Tt*XAS 7S222
4-43
1
)
TYPES 2N910. 2N911. 2N912. 2N1973, 2N1974, 2N1975 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 733661, MAY 1963-REVISED MARCH 1973
HIGHLY RELIABLE. VERSATILE DEVICES CHARACTERIZED ESPECIALLY FOR SMALL-SIGNAL APPLICATIONS • High Voltage • Low Leakage hFE Over Wide Current Range
•
Useful
•
Both Common-Emitter and Common-Base Small-Signal Characterization
mechanical data
THE COLLECTOR
2N910, 2N911.2N912
IS IN
ELECTRICAL CONTACT WITH THE CASE
"""HSre " ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
i
iMmn
-
>
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE* THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 2N1973, 2N1974, 2N197S
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE* absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
2N1973 2N1974 2N1975 100v-80v*-60v*-
2N910 2N911 2N912 •
Collector-Base Voltage Collector-Emitter Voltage (See Note
1
Collector-Emitter Voltage (See Note 2)
-7v*-
Emitter-Base Voltage
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Notes 3 and 4) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Notes 5 and 6) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10Seconds .
NOTES:
.
.
3.
For
4. For 5. 6.
For For and
1.8
w*
0.8
w*
W <, * » \p
~65 c to 200 C *
30° c
whan tha ba
This value applla» 2. This value applies 1.
".5w*
.
*
-
registered data. This data sheet contains all applicable registered data in affect at tha time of publication. outline for these devices Is TO-6. TO-39 falls within TO-6 with tha exception of lead length. f This value is guaranteed by Texas Instruments in addition to the JEDEC registered value which Is also shown.
rating
•JEDEC
Tha JEDEC registered
Instruments TexasINCORPORATED POST OFFICE BOX S012
25°C free-air temperature (unless otherwise noted) TO-lS-o
PARAMETER
TEST
CONDITION s
2N910 2N1973
TO-39t»
MAX
MIN
= 100 ia = 30 ma. lc = 100 ma = 100 cut, Vce = 75 v. Vci = 75 Vb = 5
Breakdown Volroge
V|M)CK>
Cedlector-last
V|W)CEO
Colcoctw-Emirrer Brtotdown Voltage
V|en>Cf« Collettor-Emltttr Breakdown VoHag*
V(m)eio Emitlir-lan Breakdown Voltage
ten
Curmit
Collector Cutoff
lc
= = lee =
Ie
lc
lc
y,
Uk>
Emitter Cutoff Current
v,
Vet hK
Slolk Forward Curunt Transfer Ratio
= 10
»,
Va =
10
v.
=
10
»,
Va
l
E
(See Note 7)
l,
a
10
(See Note 7)
=
= = 0, lc = lc = 100 /xa lc = 10 ma lc = 10 ma.
=
Ta
100
100
Y
60
60
Y
to
to
to
V
7.0
7.0
7.0
Y
150'C
(Set Note 7)
=
-55*C
UNIT
60
25
25
25
no
15
15
15
iw
25
no
25
Ta
2N912 2N197S MIN MAX
100
le
li
2N911 2N1974 MIN MAX
25
35
20
10
75
35
15
30
15
10
(See Note 7)
1,
= =
1.
—
It
V«
Ban-Emitter VoHogt
Vciii.ii
Caltoctw-EmlttOf Soturotion Vorrote
h lb
Smoll-Sianal
1
ma.
lc
5
mo
lc
1
ma,
= 5 ma. =5 Vce = S Y, Vce = 5 v. Vce = 5 Vce = 5 Vce = 5
Input Impedance
Kb
Smoil-Sjiwl Common-Bose
own
Kb
Vottoje
Small-Signal
Tnmshr
lotto
Common-Ion
Output Admittance
v,
h„
Smoll-Slgnol Common-Emitter
Input Imptdonce
Va =
5 ».
=5 Va = 5
Forward Current Transfer Ratio hg.
Small-Signal Common-Emitter
Va =
Output Admittance Small-Signal Common-Emittor
|h,.|
Forward Current Transfer lotto
Output Capadtance
Input Capacitance
0.1
Y
0.4
0.4
0.4
Y
1.2
1.2
1.2
Y
30
ohm
1.0
ohm
=
5
ma,
(
=
1
kc
1
ma.
1
=
1
kc
76
200
36
90
It
50
5
ma.
1
=
1
kc
SO
200
40
100
20
50
ma,
1
=
1
kc
f
=
20 me
0.
f
=
1
me
15
lc=0.
f
=
1
me
IS
= =5 = =5 1
1
1
= lc =
lc
ma,
f
mo.
f
ma,
f
ma,
1
ma,
f
5 »,
lc
=
5
=
50 ma,
10
»,
lc
Vce
=
10
Y,
le
Va
=
=
V
0.9
lc
lc
0.5 Y,
0.6
1
lc
»,
»,
0.8
0.9
ma,
v,
v.
0.6
0.9
lc
lc
=
Common-Base Open-Circuit
C, b
0.1
= =5
lc
Vci
Common-Base Open-Circuit
Crf,
0.6
= = = = = =
lc
»,
V«
Small-Signal Common-Emitter
hi.
ma
10
= 50 mo lc = 10 mo lc = 50 ma
Ie
Vci
Cwnmon-Bost
=
1
Ice
20
30
20
30
20
1
lie
4.0
1.0
4.0
to
4.0
1
kc
3x10-*
1.25 x 10-"
1
kc
4x10-'
1.75
1
kc
0.5
0.5
0.5
/undo
1
kc
1.0
1.0
1.0
/*mho
600
ohm
1100
xlO" 4
xl0 J
1.75x10-*
1000
100
3.0
1.25
1
50
25
/unho
15
15
pf
15
15
P.
2.5
2.0
'operating characteristics at 25*C free-air temperature
PARAMETER
NF Spot
Vce
Hoist Figure
f
NOTE 7
:
Tern
'Indicates
=
= 1
10
v,
lc
= 300
/u, Ie
kc. Heist Bandwidth
JEDEC
men me reatind money
if
=
=
200
2N9I1
2N9I2
2N1974
2NI975
MAX
MAX
MAX
12
15
It
UNIT
510 11 epi
PW 5 300 me ttenwntmt.
parameters mutt It measured esiag lelte lecanle.an.
t catagt (rooter
TO-1S—•» 2N9I0 TO-39— 2NI973
TEST CONDITIONS
iillc.
Doty Cycle
£
2%.
false width must be such
trior
halving
«
db doubling does nol cause
Registered Doll.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES TNE RIGHT TO MAKE CHANGES AT ANT TIME IN
OtDEt TO IMPROVE DESIGN AND TO SUPPIT THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX S012
•
DALLAS, TEXAS 78222
445
TYPE 2N917 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 655549, JUNE 1964-REVISED SEPTEMBER 1965
DESIGNED FOR USE IN VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS •
Guaranteed Unneutralized Power Gain
•
Low C bo— 1-7 pi max Low Noise Figure - 3 db typ
•
-9
db min at 200
Mc
Mc
at 60
'mechanical data
—as
ano
THE ACTIVE ELEMENTS AIE ELECTRICALLY INSULATED FtOM
6176
0.0M
I
MAX^
THE CASE
T
1
D.no ai9i
550?
OU
o.i7i
DM 1
1
ALL JEDEC T0-72t DIMENSIONS
AND NOTES AIE APPLICABLE
tTO-72 oulllnt *
absolute
li
some 01 TO-18 outllm wllh tht orWilion
maximum
25°C
ratings at
of o fourth leod.
temperature (unless otherwise noted)
free-air
30 v
Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Total Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
Operating Collector Junction Temperature Storage Temperature Range *electrical characteristics at
Collector-Base
= = Note 4 c= V c .= 15v, U= = V c .= 15v, A = 150°C V CE = c = ma U = 0.15ma,l c = 3ma = 0.15ma,l c = 3ma V a = 10v, c = 4ma, f=100Mc l
c
lc l
Collector Cutoff Current
E
= = 3ma, = 10/xa, ljLia,
U
l«
1 v,
Forward Current Transfer Ratio
h re
Static
VK
Base-Emitter Voltage
V C E{i.t)
Collector-Emitter Saturation Voltage
See
0,
E
Common-Base
Open-Circuit
Vc.
Output Capacitance
Common-Base
, lbo
Open-Circuit
VE ,
Collector-Base
when
fht base-emitter diode
V
15
y
3
V 1
0.1
20
na /xa
200 V
0.5
V
1.7
pf
f
1.6
Pf
f
75
psec
5
l
This value applies
Derate linearly to 200°C free-air temperature at the rale of 1.14
3.
Derate linearly to
4.
This parameter must be is
is
200°C case temperature at the
=
E
l
l
0,
f=140kc
= 140kc = = 40Mc c = 4ma, c
0,
open-circuited.
I.
lead (case)
0.5v,
Vcb==10v,
Time Constant
2.
fourth
= 10v, =
Input Capacitance
r b 'C c
t The
UNIT
Forward Current Transfer Ratio
.
NOTES:
MAX
0.87
l
'*'
222.::
30
T
3
l
MIN
l,
Small-Signal Common-Emitter
1
0,
l
l
'
ooqoc •
-65 C to ^00 C
TEST CONDITIONS t
Breakdown Voltage
V[r)ek> Emitter-Base Breakdown Voltage
i.
mw
25°C free-air temperature (unless otherwise noted)
V(ki)ceo Collector-Emitter Breakdown Voltage
Icbo
3v
200
.
PARAMETER Vimcto
'* v •
rale of 1.72
measured using pulse techniques.
mw/C°.
mw/C°. PW
= 300
floating for oil measurements except Power Gain.
ftm,
For this
Duly Cycle
<
1%.
parameter the fourth lead
is
grounded.
Indicates JEDEC registered data.
USES CHIP N22
448
Instruments TexasINCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
TYPE 2N917 N-P-N SILICON TRANSISTOR
'operating characteristics at 25°C free-air temperature
PARAMETER NF
Spot
Note
TEST CONDITIONS t
V« = ov,
Figure
f
Unrteutraliitd Small-Signal
6
**
Emitter Insertion Powtr Gain
P.
= 60Mc
V« = 10v,
Common-
Soo Figure
Vcc
Osdllator Powtr Output
l
c
l
c
1
= lSv,
lc
f
Mc,
Sm Figure 2 t
M
The faerie
(cose)
h
flwtlnf
Ik
ill
lets
except Poorer
M>.
IMt
For
aerejeotor lln feurti toea
UNIT do
= 5mo, = 2O0«c, = » mo, = 500 1
MAX
MIN
= lmo. »» = 400n,
9
db
10
mw
b |immM.
PARAMETER MEASUREMENT INFORMATION
CIRCUIT
Mfc-1 FROM
50
COMPONENT INFORMATION
CI, C2, ondC9: 0.05 H f C3:
1
.5 - 10 pf
C4ondC5: C6 and C7:
O
SOURCE
C8: Rl: LI:
25 pf 2.2 kO
'12AWG, 2 cm ID 200 Mc RFC 1/2T'12AWG, 3 cm IT
L2and L4:
COMMON
I
L3:
Dl and D2:
D-C
1000 pf 3 - 15 pf
1N3063
(or
ID equivalent)
6 + vcc
FIGURE
1
- UNNEUTRAUZED 200-Mc INSERTION POWER GAIN TEST CIRCUIT
±±
ClandC2:
OUTPUT
DOUBLE
=
STUB
TUNER
1000 pf
C3: 75 pf Rl: 2.2 kO
and L3: 500 Mc RFC 2T '16 AWG, 3/8" OD, 1 1/4" length Double Stub Tuner consists of the following LI
=
L2:
plumbing 2 I
1 1
(or equivalent):
GR GR GR GR
Type Type Type Type
874 TEE 874-D20 Adjustable Stub 874-LA Adjustable Line
874-WN3
Short-Circuit
Termination
FIGURE 2 • Irticolos
3
PRINTED IN
- JOO-Mc OSCILLATOR
POWER OUTPUT
TEST CIRCUIT
JEIEC rafistsne *•!•
USA
Tl
cannot assume any responsibility
•r
represent
Hiot
they ore Tree
lor
eny
circuits
shewn
from patent infringement.
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MARE (MANGES AT ANY TIME IN 011X1 TO IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • 6 dB mex et 60 MHz Low Nolle Figure 15 dB mln et 200 MHz • High Neutralized Power Gein • 30 mW mln et BOO MHz High Oiclllator Power Output .
.
.
.
.
.
.
.
.
•mechanical data
THI ACTIVI ILIMENTS ARI ILICTRICALLY INSULATED PROM THE CASE
»MR«
m-
MttJ
mm' i
m
-r-
ft-Mft
fl.lEE
MA
MA
em -»-
1
LojwJ ~ n MM
ALL JEDEC T0-72 DIMENSIONS AND N0TE8 ARE APPLICABLE •absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
30V 15V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
3V
Emitter-Base Voltage Continuous Collector Current
50 mA 200 mW 300 mW o _6S c t0 200^0 300 C
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 60 Seconds •electrical characteristics at
25° C
free-air
temperature (unless otherwise noted)
V(br)CBO v (BR)CEO v (BR)EBO
Breakdown Voltage
c-1ma.
Collector-Emitter Breakdown Voltage
IC
Emitter-Base Breakdown Voltage
l
'CBO
Collector Cutoff Current
hc E
Static
'e-o
3 mA,
Ifj
E -10uA,
V C B-15V,
- 0,
See Note 4
lc-0 l
E
Base-Emitter Voltage
VcE(sat)
Collector-Emitter Saturation Voltage
In,-
l
V V
150°C
Forward Current Transfer Ratio
VcE"
mA, 10V,
Vcb-IOV, VCB " 0,
Common-Base Open-Circuit Output Capacitance
Common-Base Open-Circuit C|ho Input Capacitance
Time Constant
lc" 10
1
nA uA
1
V
0.4
V
20
l
Common-Emitter
Collector-Base
V
10
.
1
MAX UNIT
15
-0
VgE
rfe'Cc
TYP
30 3
TA V C B - 15 V, E - 0, V CE " 1 v 'C * 3 mA B -1mA, lc-10mA
Forward Current Transfer Ratio
Small-Signal
MIN
TEST CONDITIONS*
PARAMETER Collector-Base
.
mA
l
c -4mA,
f-100MHz
l
E -0,
E "
0.
f- 140 kHz f - 140 kHz
1.7
l
2
V EB -
0.5 V,
I
C
- 0,
f- 140 kHz
Vcb"
10 V,
l
E
--4mA,
f
- 79.8
MHz
6
9 pF 3
8
pF OS
This value applies when the base-emitter diode Is open-circuited. Derate linearly to 200° C free-air temperature et the rate of 1.14 mW/°C. 3. Derate llneerly to 200°C case temperature et the rate of 1 .71 mW/°C. 4. This parameter must be measured using pulse techniques. V, - 300 us, duty cycle < 2%. •JEDEC registered date. This deta sheet contains all applicable registered dete In effect at the time of publication, tfhe fourth lead (case) Is floating for all meesurementa except power geln. For this measurement, the fourth lead Is grounded.
NOTES:
1
.
2.
USES CHIP N22
Instruments TexasINCORPORATED POST OFFICE BOX 8012
•
DALLAS. TKXAS 75228
TYPE 2N918 N-P-N SILICON TRANSISTOR •operating characterirtlct at 26° C free-air temperature
PARAMETER VcE
Spot NolM Figure
F
Neutralized Snwll-8lontl
'"
Otclllitor
n
Collector Efficiency
See Figure
MAX UNIT
lc-6mA,
f- 200
dB
6
MHz IB
dB
30
mW
1
V CB -1SV,
Power Output
MIN
l
f-60MHi VCB-12V,
Common-
Emitter Initrtlon Power Gain
Po
TIST CONDITIONS* Rq - 400 n, c - 1 mA,
* 6 V,
l
c -8mA,
f> BOO MHz
See Figure 2
2BK
'PARAMETER MEASUREMENT INFORMATION CIRCUIT SCHIMATIC
NEUTRALIZATION ADJUSTMINT PROCEDURE
C2
After tuning omplifitr as for normal gain measurement, reverie Input
on
ond output connections and tun*
detector. Thii sequence
obtained for
li
repeated
U
minimum Indication optimum settings art
for
until
all variables.
COMPONENT INFORMATION 3-12pF C6: 0.06 UF C2»nd C7: 1000 pF R1: loon C3i 1.B-7.6pF R2: 1 kO CIRCUIT
CI:
ni v„
c*
n
a
TO50C5 DETECTOR
C4 and C6: 0.01 nF LI: 3H T #16 AWG, 5/16"
ID, 7/16" longth Turni Ratio •» 2 to 1 L2: 0.4-0.6S MH, Millar #4303 (or oqulvalantl. L3: 8 T #16 AWG 1/8" ID, 7/8" length. Turns Ratio * 8 to 1
6^Hh
L4:
B
200 MHz RFC
FIGURE 1-NEUTRALIZED 200-MHt INSERTION POWER GAIN
CIRCUIT SCHEMATIC
L4
C2 CIRCUIT
COMPONENT INFORMATION
CI andC3; 1000 pF
-ita f 1* 5
L2
i
C2: 50 pF C4: 75 pF R1: 2.2 kfi LI, L3, and L4: 0.2 fiH, Ohmite Z460 (or equivalent). L2: 2 T #16 AWG, 3/8" OD, 1-1/4" length Double-Stub Tunar consists of the following
OUTPUT
DOUBLE STUB
TUNER
plumbing 2 1 1 1
(or aquivalant):
G R Type 874 Tee
GR GR GR
Type 874-D20 Adjustable Stub Type 874-LA Adjustable Line Type 874-WN3 Short-Clrcuit
Termination
FIGURE 2-500-MHz OSCILLATOR POWER OUTPUT
*JEDEC f The
F3
registered data fourth leed (cese) is floating for
all
measurements except power
For
this
measurement, the fourth leed
is
grounded.
PRINTED IN U.S.A. Tl
connot asiume any relponsibility for any circuits ihown
or
represent
that
they
arc fret
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
gain.
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 8012
DALLAS, TIXAS 78222
440
TYPE D2T918 DUAL N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 7311977, MARCH 1973
TWO TRANSISTORS IN ONE PACKAGE FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • 6 dB max at 60 MHz Low Noise Figure 15 dB min at 200 MHz • High Neutralized Power Gain 30 mW min at 500 MHz • High Oscillator Power Output .
.
.
.
.
.
.
.
.
mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designate true position. Luds having maxiin mum dlamater (0.019") maasurad gaging plana 0.054" +0.001" -0.000" below tha stating plana of the davlca hall ba within 0.007" of thalr trua position rsiativa to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
B
absolute
maximum
ratings at
25°C
free-air
1
1
2
COLLECTOR
2
temperature (unless otherwise noted)
Collector-Base Voltage
.
30
V
Collector-Emitter Voltage (See Note 1)
.
15
V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2): Each Triode
.
Total Device
Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
V(BR)CEO v (BR)EBO
Collector-Emitter Breakdown Voltage
Breakdown Voltage
c -1uA.
IC " 3
lg - 0,
l
lc-0
Base-Emitter Voltage
v CE(sat,|
Collector-Emitter Saturation Voltage
lB"1mA,
lc-10mA
VC E
l
h FE
Static
Forward Current Transfer Ratio
Common-Emitter
Forward Current Transfer Ratio
Output Capacitance
Common-Base Open-Circuit
rb'Ce
Input Capacitance Collector-Base
- 10 V,
—65 C to 200°C
Time Constant
E
l
E -
0,
TA
- 150°C
C - 3 mA lc- 10 mA
1
uA
1
f- 100 MHz f
- 0.
f
-
1
V EB - 0.5 V,
lc - 0,
f
-
1
MHz
Vcb-IOV,
l
f
- 79.8
--4mA
nA
0/4
E -0,
E
10
20
MHz MHz
'E
V
3
I
C - 4 mA,
MAX UNIT V V
-0
l
l
TYP
15
See Note 3
-
Vcb-IOV, VcB " 0,
Common-Base Open-Circuit
Cibo
.
30
Ie-0
V BE
Emitter-Base Breakdown Voltage Collector Cutoff Current
Cobo
NOTES:
l
mA, E -10uA, V CB -15V, V C B - 15 V, V C E - 1 V, lej- 1 mA,
•CBO
MIN
TEST CONDITIONS
Collector-Base
Smell-Signal
.
300°C
PARAMETER v (BR)CBO
h fel
.
25° C free-air temperature (unless otherwise noted)
electrical characteristics at
l
3V 50 mA 200 mW .... 300 mW
1
6
9 1.7
2
pF 3
MHz
This value applies whan tha base-amitter diode Is opan-circuitad. Derate linearly to 176°C fraa-alr temperature at tha rates of 1.33 mW/°C for each triode and 2 3. This parameter must ba measured using pulse techniques, ty, - 300 Ms, duty cycle < 2%.
V V
8
pF P«
1.
2.
mW/°C for
the total device.
USES CHIP N22
4-50
Instruments TexasINCORPORATED POST OPPICI BOX 5012
DALLAS. TEXAS 7S222
i
TYPE D2T918 DUAL N-P-N SILICON TRANSISTOR operating characteristics at 25° C free-air temperature
PARAMETER F
V CE
Spot Noise Figure
f
Neutralized Small-Signal
™
Common-
Oscillator
i)
Collector Efficiency
- 60
Vcb
Emitter Insertion Power Gain
Pq
- 6 V,
Vcb
l
MIN
MAX UNIT
fi,
6
MHz
= 12V,
See Figure
Power Output
TEST CONDITIONS R G - 400 c - 1 mA, c=
6mA,
f
lc =
8mA,
f= 500 MHz
l
=
dB
200MHz 15
dB
30
mW
1
= 1SV,
See Figure 2
25%
PARAMETER MEASUREMENT INFORMATION CIRCUIT SCHEMATIC
NEUTRALIZATION ADJUSTMENT PROCEDURE
C2
After tuning amplifier as for normal gain measurement, reverse input
Turns Ratio «*2to 1 L2: 0.4-0.65 HH, Miller #4303 (or equivalent). L3: 8 T #16 AWG 1/8" ID, 7/8" length. Turns Ratio *8to 1
r^H L
L4:
200 MHz
B
RFC
FIGURE 1-NEUTRALIZEO 200-MHz INSERTION POWER GAIN
CIRCUIT SCHEMATIC
CIRCUIT
OUTPUT
COMPONENT INFORMATION
CI and C3: 1000 pF C2: 50 pF C4: 75 pF R1: 2.2 k« LI, L3, and L4: 0.2 jjH, Ohmite Z460 (or equivalent). L2: 2 T #16 AWG, 3/8" OD, 1-1/4" length Double-Stub Tuner consists of the following plumbing (or equivalent): 2 G R Type 874 Tee 1 GR Type 874— D20 Adjustable Stub 1 1
GR Type 874- LA Adjustable Line GR Type 874-WN3 Short-Circuit Termination
FIGURE 2-500-MHz OSCILLATOR POWER OUTPUT
13
PRINTED IN U.S.A. Tl
connot assume any responsibility for any circuits shown
or
represent
that
they are
free
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 75222
4-51
TYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 653553, MAY 1963-REVIS6D SEPTEMBER 1966
FOR LOW-LEVEL, LOW-NOISE, HIGH-GAM, AMPLIFIER APPLICATIONS
• Guaranteed h„
at
10 pa, T A
=-55°C
and 25*C
• Guaranteed Low-Noise Characteristic at 10 pa • Usable at Collector Currants as Low as 1 pa
'mechanical data
the concern
is in
eiectiiul
COHTMT WITH THE CASE All JEtEC T0-1I IIMEWIOHS
AM
•absolute
maximum
HOTES AtE Aff UCAHE
ratings at 25*C free-air temperature (unless otherwise) noted)
** v
Collector-Base Voltage
Note
Collector-Emitter Voltage (See
^
1)
30 300 600
Collector Current
25°C Free-Air Temperature (See Note 2) below) 25*C Case Temperature (See Note 3)
Total Device Dissipation at (or below)
Total Device Dissipation at (or
1. Hill I.
mint
otpllii
Dirali Hatarly to
3. Oarata
'Indkotai JE0EC
what tha tatt-aralltar
«•*
17S*C IhmIi ttmptratara
llntnly It 17S*C
cut
It
.
.
.
.
....
ma
mw mw
175
Operating Collector Junction Temperature
— o5°C
Storage Temperature Range
NOTES:
v
s v
Emitter-Base Voltage
to
+
C
200*C
apan- clrcaM.
at Hrt rati tf 2.0
m/C*.
ttaptiatuct at tha rata af 4.0 arw/C*.
nfMataf <«•
USES CHIP Nil
4-52
Instruments TexasINCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 78222
TYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS
'electrical
2S*C
characteristic* at
PARAMiTiR Yoho«
V(r)eio EnHtif-Bass IraflkdMn Vottejs
Collector Cutoff Current
loo
(Sm Not*
5)
CollMtor Cutoff Cwrent
bo
Emfttor Cutoff Current
r,
Stalk Forward Current Transfer lotto
*re
V*
lan-Emittor
*cm«A hib
VoHoh
li
CoHtdor-EmrrHr SotvrattM Vtftow Smali-SioMil
= 10 mo. = 10 no E Vc. = 45v, ¥a = 45 v. Vet = 45 y. Vet = 5 », Vm = 5 V« = 5 v. Va = 5 y. Ve* = 5 v. V« = 5 y. = J ma. = 0.5 ma. U lc l
Collector Cutoff Current
lea
Input Impedance
Vc.
l*v*rs* Vortaw Transfer taHo Small-Sifnal
K*
Snton-SiaMl
= 0, lc = = VK = V« = 0, = c = lc = 10 (ut lc = 10 tto, lc = 500 tta lc = 10 ma, c = 10 ma. c = 10 ma. U
2N929 MAX MIN
(SMNoto4)
TA
45
y
5
5
y
= 170t
10
10
10
10
no
10
10
pa
2
2
na
10
10
BO
l,
l
40
= -55»C
TA
120
10
(Sm Not*
4)
l
(Sm Nat*
4)
300
100
150
400
350
4)
l
no
20
.40 (5m Not*
2N930 MIN MAX UNIT
45
l«
=5
U
y.
0.4
1.0
0.4
1.0
=—
'
1
ma.
25
Ik
T
32
Vci
=5
y.
U
=—
1
ma.
1
=
1
kc
Vci
=
5
y,
l
=—
1
ma.
1
=
1
kc
1.0
Vce
=
5 y.
lc
=
f
=
1
kc
¥«
=
5 y.
lc
= 500
E
Common untlNi
Fotword Current Transfer latia
=
f
4.0 x 4 io-
Common-las*
Output Aaiuttann
K
unless otherwise notttd)
1.0
y
1.0
y
32
onm
Common-las*
SmoK-Sanal Common-laM krb
(
TIST CONDITIONS
V[kick> ColkKror-lmHtor Ireokdom
Icio
temperature
free-air
1
ma.
40
350
25
4.0 x
1.0
4
io-
/undo
400
150
SmaH-Sitnal Comnan-Emiltor
K\
Forward Current Transhr Rath)
fia. f
= 30
mc
1.0
li)
Common-tost Ontn-Cutuit
C*
¥c*=5y.
Output Copodtonc*
•operating, characteristics at
25*C
Avaron* Nob* Figure
TIwm yw wtil wi HMMt bt nii iw ii Kfc|
5.
Icu
•MtaN»
***
bt
JEtEC ntliMiW
m
&u
1
mc
1
fl
l
C |o •»
=5
v, lc
=
10 /M, l«
=
10
kn
2N930
MAX
MAX
UNIT
4
3
4b
prist
tUvtti
I.
PW
= SM
juk, Mir Cfd.
<
i%.
MlalltlWH.
Mi.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
>
2N929
Nois* lonowktttt 10 cps to 15.7 kc
4.
My
=
TEST CONDITIONS Vc*
VOTESt
f
free-air temperature
•ARAMITER to
hj-0.
ORDER TO IMPROVE 0ESICN AND TO SUPPLY THE BEST PRODUCT POSSIBLE
BULLETIN NO. OL-S 693471, MAY 1963- REVISED AUGUST 1969
Highly Reliable, Versatile Devices Designed for
and
Amplifier, Switching
ma
from <0.1
* mechanical
Oscillator Applications
>150 ma,
to
•
High Voltage
•
Useful h FE
•
dc to
30 mc
Low Leakage
Over Wide Current Range
data
Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and
2N956 are
in
Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are
THE COLLECTOR
TO-18
IS
TO-5
CONTACT WITH THE CASE
IN ELECTRICAL
JEDEC TO-18 packages. JEDEC TO-5 packages.
in
TO-5
TO-18
maximum
absolute
ratings at 25 °C frse-air temperature (unless otherwise noted)
2N717 2N718A 2N730 2N731 2N718
2N696 2N697
2N956 2N1420 2N1507 2N1613 2N1711
UNIT
Collector-Bast Voltage
60
60
75
60
75
60
75
75
v
Collector-Emitter Voltage (See Note 1)
40
40
50
40
50
30
50
50
V
5
7
5
7
7
V
32
Collector-Emitter Voltage (See Note 2)
5
Emitter-Base Voltage
7
5
Total Device Dissipation at (or below)
0.6
0.4
25 °C Free-Air Temperature (See Note Indicated in
Parentheses)—*»-
Total Device Dissipation at (or below)
(See Note Indicated in
Parentheses)—•>
1.
This value applies
value
applies
the
3. Derate
linearly
to
175°C
4.
Derate
linearly
to
17J°C case
5.
Derate linearly tt 175°C
bate-emitter
free-air
free-air
t
tt (»)
(7)
(3)
(10)
(10)
2.0
1.5
1.8
1.5
1.8
2.0
3.0
3.0
t
tt
w
t
tt
(4)
(«)
(8)
(«
(8)
(4)
(11)
(11)
1.0
0.75
1.0
0.75
1.0
1.0
1.7
1.7
w
200
200
°C
t
n
175t
175tt
resistance
(ft
K
Is
)
t
tt
equal
died*
is
200
to
or
175tt
less
» M-clrevIted.
temperature at
the
rate
of
4.0
temperature at
Hie
rate
of
13.3
temperature at the rate of
4. Derate
linearly
to
175°C case
temperature at the rate
of
7.
Derate
linearly
to
200*C
temperature
of
8.
Derate linearly to
9.
free-air
w
(7)
10 ohms. 2. This
0.8
(5)
200
-*5°C
when the bow-emitter
a
0.8
tt
Storage Temperature Range
NOTES:
0.6
t
100°C Case Temperature Operating Collector Junction Temperature
0.5
(3)
25 °C Case Temperature
Total Device Dissipation at
0.5
0.5
V
1.0
1.0
1.0
Collector Current
at
the
rate
n
r/C*.
,/C.
200*C case
temperature at the rate of
linearly
to
17S*C
free-air
temperature at
rate
of
3.33
linearly
to
200°C
free-air
temperature at the rate
of
4.54
11. Derate
linearly
to
200"C case
temperature
of
the
rate
10.3
17.2
175t 200°C
fTexas Instruments guarantees Its types 2N696, IN697, 1N1420, and 2N1507 to bo capable of Ike
Sam* dissipation as registered and shown INltlJ and 2N1711 with appropriate factors shown In Notes 10 and 11.
for typos
doraflng
-A", r/f.
1.84(1
Derate
at
b
2.47 n 10.0
10. Derate
the
-A*.
than
to
n
'A*. .A*.
i
'A*.
tfToxas Instruments guarantees Its types 2N717, 2N718, IN7J0, and 2N731 to bo capable of the same dissipation as registered and shown for types 2N71SA and 2N9S6 with appropriate derating factors shown In Notes 7 and B.
mw,A*.
•Indicate JE0EC ngistend lota.
USES CHIP N24
4-54
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 75223
TYPES 2N718A, 2N9S6.
2 N 14 20. 2N1507. 2 N 16 13, 2N1711
N-P-N SILICON TRANSISTORS electrical characteristic* at
25*C free-air temperature (unless otherwise noted) TO-lS-c*
Tin CONDITION S
PARAMETER
"iMCM
Collecterleu Ireakdaam V«tt«t»
*I«|CK)
Cellecler-Emlttef
'(«IC»
Collector-Emitter Breakdown Valtag*
*imuo
Emitter-Rate
Midn Vallate
Onekdawn Vallate
Collector Celaff Current
'en
= IN |M =
= M M. c = IN M = IN M> Vc , = Nu, »> »CI = »CI = *• »ct = « ¥„ = ».. »„ = 1a = »„ = *Ci = M c
l
I
l
E
•-
«•
Cored Curreat
'c«
Collector
'ao
Emitter Color!
CurMt
5 ,.
10 ,. ID ». «.
Sialic Forward
h
Carnal
Trontfir Rail*
= tu =
M
c =
10(1,
50
Saa Nata It
30
l,
0,
tA
= ISO'C
l
0.
l
¥
30
7
= = E = t = I K = 100 c = o c = c = IN Ma ma. c = ma. c =
TA
=
1.0
1.0
IN
so
50
f
7
V
M« M«
0.010
0.010
10
10
150'C
M« M«
Me
10
kf)
IN
0.01
i
Ma
0.NS 20
10 /ia
l
»
IS
o
l,
UNIT
75
00
Saa Halt li
».
'l
i
2N9M
2N71IA
2NI711 2NH13 2N1420 JN1507 MIN MAX MIN MAX MIN MAX MIN MAX 75
Forward Current Transfer Rati* Smell-Sigeel Common-Emitter
K\
Forward Carnal Tremter Ratia
c<*
»CI
Oatpirl Cupeclteace
Common-lose Opan-Clrcalt
V
Input Capacitance
Saa twitching characteristics for typaa
=
u=
l
l
l
l
l
l
l
5 »•
I
n
'.
l
10 ,,
l
"
c = c = c = c = c = c =
=
'•
l
E
0.5 ,,
i
c
IN
300
IN
J00
300
40
Nata 12
1.3
U
1.3
1.3
a
data 12
1.5
1.5
1.5
1.5
»
1
kt
24
34
24
34
•km
f
1
kc
4
1
4
1
•km
1
1
1
kc
5 ma,
1
3x 31
5x
10-4
10-4
ma.
1
5 ...
1
ma,
1
5 ma,
1
50 ma.
f
1
=
1
mc
25
1
=
1
mc
N
1
0,
«.
10-4
10-4
= = = = = = 20 mc
1
=
IN
120
1
1
10,.
= Vet = Yet =
Common-late Open-Circuit
»•
l
5 ,.
,=
Output AdmllteiKe
= 150 ma, = 5M ma, Sn c = 150 ma. Sn c = 150 ma, Sn = c = ma, = c = 5 ma, = = ma, c
10 ,,
1
kc
1
kc
0.1
0.5
0.1
0.5
Mama
1
kc
0.1
1.0
0.1
1.0
Mmka
1
kc
M
IN
50
1
kc
35
150
70
3.0
2.5
3.5
2.5
35
2N NO
35
25
Pf
N
of
2N718A and 2N1613 on pages 4-30 or 4-72.
'operating characteristics at 25°C froo-air temperature TO-1S— Tin CONDITIONS
PARAMETER
M = 1» = S10
V l»
Mf Spot Noitt Fhjvra
NOTE
12:
Than paramilan must a
'Indicates
H
measured using pulia techniques.
chmigo groatar than the required accuracy
JE0EC
at
Ike
PW
»,
lc
n,
5
f
=
300 1
TO-5
< 2%.
UNIT
TVP
MAX
TVP
MAX
S
s
«
12
M° Circle
JN14IJ
2N1711
ke
300 list, lull
2N71SA
2N9S6
—
Pulse width must be >uch that halving or doubling
dm
dt>
not
cone
measurement.
registered data
PRINTED IN U.S.A.
Instruments Texas INCORPORATED TEXAS INSTIUMENIS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE SOX S012
•
DALLAS. TEXAS 75222
4-55
TYPE 2N997 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR BULLETIN NO. DL-8 7311677, MARCH 197S-REVI8ED MARCH 1973
TWO TRIODES INTERNALLY CONNECTED IN •
DARLINGTON CONFIGURATION
Very High Gain ... 1000 min
•
Low Leakage.
•
Rugged
..
nA max
10
at
at
100 m A
V
60
Internal Connections
'mechanical data
THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDECTO-18 DIMENSIONS AND NOTES ARE APPLICABLE IN INCHIS
UWtM
OTHIffWIM
inciriio
'absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
75V 40V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1)
7V mA 0.5 W
Emitter-Base Voltage
3 °0
Continuous Collector Current
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
1-5W -65 C to 200 C 30 °
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds 'electrical characteristics at
25° C free-air temperature (unless otherwise noted)
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
Static
"FE
MIN
TEST CONDITIONS
PARAMETER v (BR)CBO v (BR)CEO v (BR)EBO
iC- 100 «iA, IC " 30 mA, l
E - 100
V C B - 60 V, V C B ' 60 V, V EB = 5V, V C E - 10 V, VcE = 10 V,
Forward Current Transfer Ratio
VcE" VcE"
10 V, 10 V,
l
c -0
l
E
i
E -o.
l
c -0
MAX
See Note 4
40 7
-0
10
Ta-
c = 100 mA IC= 10 mA lc= 100 mA, See Note 4 c = 100 mA, T A - -55°C,
nA
MA 10 nA
10
150°C
l
UNIT
V V V
75
E = is-o, l
1000
4000 7000 70 000
l
1000
See Note 4
NOTES:
VB E
Base-Emitter Voltage
V CE
VcE(sat)
Collector-Emitter Saturation Voltage
l
C Q bo
Common-Base Open-Circuit Output Capacitance
B =
= 1
10V, mA,
Vcb-IOV,
mA, See Note 4 c lc= 100 mA, See Note 4 l
l
- 100
E -0,
when the emitter-bate diode Is open-circuited. Derate linearly to 175°C free-air temperature at the rate of 3.33 mW/°C. 3. Derate linearly to 175°C case temperature at the rate of 10 mW/°C. 4. These parameters must be measured using pulse techniques. t w = 300 M«. duty cycle 1.
f
-
1
MHz
0.9
1.8
V
1.6
V
35
pF
This value applies
2.
•JEDEC
registered data. This data sheet contains
all
<
2%.
applicable registered data in effect at the time of publication.
USES CHIP N23 PRINTED IN
4-56
Instruments Texas INCORPORATED POST OFFICE BOX S012
DALLAS. TIXAS 79232
U.S.A.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPflV THE (EST PRODUCT POSSIBLE.
TYPE 2N998 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR BULLETIN NO. DL-S 7311839, JUNE 1973
TWO TRIODES INTERNALLY CONNECTED IN
DARLINGTON CONFIGURATION
•
Very High hFE
•
Low IcBO
•
Rugged
•
•
... .10
1600 min
at 10
mA
nA max at 90 V
Internal Connections
'mechanical data
THE COLLECTOR
4
LEADS
IS IN
ELECTRICAL CONTACT WITH THE CASE
|dia-h jjjj
0.210 '"'
JTJo 0.030
3 -COLLECTOR
MAX* 1
.
|
1
0.230
0.106
J2M
OTTO CMA
OIA
BASE 2 EMITTER
-2^
ALL DIMENSIONS ARE IN INCHES
1
UNLESS OTHERWISE SPECIFIED
t
1
1
~_ MIN J 0.600
2
1
- BASE 1
1
- EMITTER
2
ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE
•absolute
maximum ratings at 25° C free-air temperature
(unless otherwise noted)
V V 15 V
Collector-Base Voltage
100
Collector-Emitter Voltage (See Note 1)
60
Emitter-Base Voltage
Continuous Collector Current
500
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25° C Case Temperature (See Note 3) Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1.
mA
0.5 1
-65°C
to
.8
W W
200°C 300°C
when the emitter-base diode* are opan-circulted. 20O°C free-air temperature at the rate of 2.86 mW/°C. Derate linearly to 200°C case temperature et the rate of 10.3 mW/°C.
This value applies
2. Derate linearly to 3.
*JEDEC registered
data. This data sheet contains
all
applicable registered data in effect at the time of publication.
USES TWO N23 CHIPS
Texas INCORPORATED Instruments POST OPPICE BOX 5012
DALLAS, TEXAS 75222
4-57
TYPE 2N998 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR
'electrical characteristics at
25°C
temperature (unless otherwise noted)
free-air
Breakdown Voltage
V(br)CBO
v (BR)CEO
Collector-Emitter
V(br)EBO
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current Static
l
IC-30mA,
Breakdown Voltage
Forward Current Transfer Ratio
Static
Forward Current Transfer Ratio
C -0
V C B-90V, V CB -90V, V EB -10V,
l
E
l
E -0,
l
c -0
60
V
16
V
-0
10
TA = 150"C
15
10
mA
nA uA nA
800
VCE " B V, Vqe - 5 V, Vqe - 5 V,
lc -
Vce-5V,
lc-10mA,
See Note
lc-50mA, lc-50mA,
See Note 4
1.8
See Note 4
1.2
V V
f-IMHz
30
pF
MHz
50
pF
1
mA, See Note 4 mA, See Note 4
2000
4
25
lc - 10
8000
1600
lc - 100
(Each Triode) Base-Emitter Voltage
lg-
VcE(sat)
Collector-Emitter Saturation Voltage
Ib = 0.5
Small-Signal
Common-Emitter
V CE
Forward Current Transfer Ratio
Common-Base Open-Circuit
B
See Note 4
Ib-O, l
VfjE
hfs
V
100
Ie-0
E -100»iA,
l
(Total Device)
hFE
c -100*iA,
MAX UNIT
MIN
TEST CONDITIONS*
PARAMETER Collector-Base
Output Capacitance
Common-Base Open-Circuit Input Capacitance
0.5
mA, mA,
- B V,
mA,
I
C-
V C B-10V,
l
E -0,
V E b - 0.6 V,
lc - 0,
1
f
f
-
-
1
1
kHz
1000
'operating characteristics at 25° C free-air temperature
F
NOTE
4:
•JEDEC t All
MAX UNIT
MIN
TEST CONDITIONS
PARAMETER
Vce-IOV, lc- 0.1mA, Ib2"-20jiA, B - 200 Hz Rq - 5 kft, f - 1 kHz,
Spot Noise Figure
These parameters must be measured using pulse techniques,
t^,
- 300
fit,
duty cycle
<
6
dB
1%.
registered data
measurements except h FE (each triode) and F are made with the emitter- 7, bate-2 terminal
(tead 4) open.
THERMAL INFORMATION CASE TEMPERATURE
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
DISSIPATION DERATING CURVE
i.e 1.4
0.8 0.6 0.4
26
60
75
100
126
160
TA-Free-Air T«mptratura-
FIGURE
a
176
25
200
SO
75
100
125
1B0
175
W0
Tc-Cm Ttmpjf«ur»- C
C
FIGURE 2
1
PRINTED IN U.S.A.
4-58
Instruments Texas INCORPORATED POST OFFICE BOX 9012
DALLAS. TSXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUfflT THE (EST ftOOUCT rOSSIWE.
TYPE 2N999 DARLINGTON-CONNECTED SILICON TRANSISTOR
N-P-N
BULLETIN NO. DL-S 731201 1, JUNE 1973
TWO TRIODES INTERNALLY CONNECTED DARLINGTON CONFIGURATION
IN •
Very High hpE
•
-4000 min
•
Low ICBO
10
nA max at 60 V
•
Rugged
•
•
Internal
mA
at 10
Connections
'mechanical data
THE COLLECTOR
« LEADS
!^fii
DIA
IS IN
ELECTRICAL CONTACT WITH THE CASE
-
,
0.210
0170"
COLLECTOR
0.030
MAX'
TTSSS"
0.195 0.178
DIA
DIA
0,230
J
2
f*f|_ EMITTER
1
ALL DIMENSIONS ARE |N inches UNLESS OTHERWISE SPECIFIED
0.100
— 0.500.
2
MIN
- BASE
1
1- EMITTER
2
ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE
'absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
This value applies Derate linearly to 3. Derate linearly to
*JEDEC
V
mA
1.8
W W
to 200
C
300°C
Lead Temperature 1/16 Inch from Case for 10 Seconds 1.
15 0.5
—65 C
Storage Temperature Range
2.
V V
500
Continuous Collector Current
NOTES:
60 60
when the emitter-base diodes are open-circuited. 200°C free-air temperature at the rate of 2.86 mW/°C. 200°C case temperature at the rate of 10.3 mW/°C.
registered data. This data sheet contains
all
applicable registered data in effect at the time of publication.
USES TWO N23 CHIPS
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
4-59
TYPE 2N999
DARLINGTON-CONNECTED SILICON TRANSISTOR
N-P-N
'electrical characteristics at 25° C free-air
temperature (unless otherwise noted)
PARAMETER Collector-Base
v (BR)CEO
Collector-Emitter Breakdown Voltage
v (BR)EBO
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
Static
IC=100mA, lc " 30 mA,
Breakdown Voltage
lE
= 100j*A, - 60 V,
Vcb
VCB-60V, V EB =10V. V CE =10V, Vce'IOV, V CE 10 V,
Forward Current Transfer Ratio
(Total Device)
- 10 V,
Vce
Ie =
\q = 0,
See Note 4
Ic"0 l
l
V
60
V V
15
T A =1S0°C
C =0 c = 0.1mA
10
nA
10
MA nA
10
1000
c =10mA, See Note 4 lc - 100 mA, See Note 4
4000
l
l
60
E =
Ie = 0, I
MAX UNIT
MIN
TEST CONDITIONS*
v (BR)CBO
7000 70,000
c - 100 mA, T A - -55°C,
1000
See Note 4 Static
FE
Forward Current Transfer Ratio
V CE =10V,
(Each Triode)
B-
1
c =10mA,
1.6
V
f= 140 kHz
20
pF
= 140 kHz
10
pF
1
V CB
= 10V,
l
Veb
- 0.5 V,
lc = 0,
Input Capacitance
V
1.8
IB -
Common-Base Open-Circuit
25
lc -
Base-Emitter Voltage Collector-Emitter Saturation Voltage
Output Capacitance
See Note 4
mA, See Note 4 100 mA, See Note 4
lc " 100
VCE(sat)
° °
•JEDEC
l
Vr E
Common-Base Open-Circuit
'''All
mA, mA,
l
E =
0,
f
registered data
measurements except h FE (each triode) are made with the emitter-1 base-2 terminal (lead 4) open. 4: These parameters must be measured using pulse techniques. t w = 300 M*. duty cycle < 1%. ,
NOTE
THERMAL INFORMATION
5 E
CASE TEMPERATURE
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
DISSIPATION DERATING
DUU
CURVE
1 1.8
500 1.6
Q
a 8
8
400
1.4 1.2
300
1
0.8
c
8
o
200
u
E 3
E
3
E
100
0.6
E
0.4
2
0.2
'x
£
I
I
I-
25
50
75
100
125
150
175
n 25
200
50
75
100
125
150
Ta— Free-Air Temperature—°C
Tc—Case Temperature—°C
FIGURE
FIGURE 2
1
175
PRINTED IN
4-60
200
U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
—
TYPES 2NH31, 2NH32 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 731776, JUNE 1961-REVISED MARCH 1973
GENERAL PURPOSE MEDIUM-POWER TRANSISTORS
• • •
2 Watts at 25°C Case Temperature
Complements to 2N696 and 2N697
10-ohm Saturation Resistance (max)
mechanical data THE COLLECTOR
ELECTRICAL CONTACT WITH THE CASE
IS IN
1 BASE 3
COUECTOK
" 0.315
0.100
*
"» iTi -H ~oo»
DETAILS Of OUTUNi in—I THIS ZONE OPTIONAL i
II
3
l
M
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
absolute
maximum
ratings at 25°C ambient temperature (unlet* otherwise noted)
Collector-Base Voltage
-50V -35v -5v
.
Collector-Emitter Voltage (See note 1)
Emitter-Base Voltage
—600 ma
Collector Current Total Device Dissipation at
Total Device Dissipation at Total Device Dissipation at
2.0w l.Ow 0.6w
25°C case temperature (See note 2) 100°C case temperature (See note 2) 25°C ambient temperature (See note 3)
Operating Junction Temperature
— 65°C to
Storage Temperature Range
1.
2. 3.
175*C 200 C
This value applies when the base-emitter diode is open-circuited. Derate linearly to 175° C case temperature at the rate of 13.3 mW/°C. Derate linearly to 175°C ambient temperature at the rate of 4 mW/°C.
USES CHIP P20
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 79222
4-61
TYPES
2N1131. 2N1132
P-N-P SILICON TRANSISTORS
electrical characteristics at
25°C ambient temperature (unless otherwise noted)
Paramotor
Test Conditions
Ick>
Collector Reverse Current
V CB
loo
Collector Reverse Current
Vc , TA
Iebo
Emitter Reverse Current
"(KICK)
Collector-Base
VE,
Breakdown
l
c
Typo
Mai.
Min.
Unit
= -30v,l = = —30v,l = = +150°C = -2v,l c = = —100/ua, E =
—50
V
=—100ma,l
—35
V
—50
V
E
—1.0
jua
E
—100
1*
—100
M"
l
Voltage
*V|«)CEO
Collector-Emitter
Breakdown
Ic
=0
B
Voltage *V(Kl|CER
Collector-Emitter
Vce
= = =
-10 V,
2N1131
20
45
Ic
=—150 ma
2N1132
30
90
Vce
=
Breakdown
Ic
RK
Voltage
DC Forward Current
*hfE
Transfer Ratio
DC Forward Current
*hre
—100 ma, 10 ohms
—10 v,
= —5 mo
Ic
Transfer Ratio
•v*
Base-Emitter Voltage
l
*VcE|Mt|
Collector-Emitter Saturation
1,
2N1131
15
2N1132
25
= —15ma,lc = —150ma = —15 ma, Ic = —150 ma
B
—1.3
V
—1.5
V
Voltage
K
AC Common-Emitter
VC e
Forward Current
f
= — 10 v, Ic = = 20me
—50 ma
2N1131
2.5
2N1132
3
Transfer Ratio Cib
= -0.5v,l c = = lmc V c , = — 10v,l = = lmc Ic = — Vce = — 5 = lkc
Common-Base Input
VE .
Capacitance
Cob
Common-Base Output
E
Capacitance
K
80
p«
45
r*
f
f
AC Common-Emitter
v,
Forward Current
1
ma
f
2NU31
15
50
2N1132
25
100
2NU31
20
2N1132
30
Transfer Ratio
K
AC Common-Emitter
Vce
Forward Current
f
= — 10v, Ic = —5 ma = lkc
Transfer Ratio
hib
AC Common-Base Input Impedance
Vc»
—
f
1
= = Vc = = Vc, = = f Vc = = Vc, = = Vc = = ,
f
hob
AC Common-Base Output Admittance
,
f
hrb
AC Common-Base Reverse Voltage Transfer Ratio
f
,
f
'These measurements must be
made
=
5 v, l E
1
ma
25
35
ohms
10
ohms
1
/xmho
5
/a
kc
—10 v,
l
E
=
5
ma
lkc
—5 lkc —10
=
v, Ie
v,
l
E
1
=
ma 5
ma
mho
lkc
— lkc —10
5 v, l E
v,
lE
=
1
ma
8x10-*
= 5 ma
8xl0" 4
lkc
with a pulse duration
^300
microseconds and a duty cycle
=£2
percent.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALI.AS.
TEXAS 79222
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
-
TYPES 2NH49 THRU 2NH53 N-P-N
GROWN-JUNCTION TRANSISTORS
BULLETIN NO. DL-S 692237, DECEMBER 1961-REVISED APRIL 1969
Oval Welded Package
HMCIMNIICttl sfOfO
The
transistor
Unit weight
is
is
an oval welded package with
in
approximately
AU
r
LEADS
1
1
glass-to-metal hermetic seal between case
and
gram.
AM
INSULATED FKOM THE CASE
a
HAM
1
0.1*2
± 0.010± 0.010
0.041
0.100
r ablTO ±0.005
*ab*otut*
maximum
±0.010-
AU PmWMI IONS M MCHIS
rating* at 2S*C free-air temperature (unlet* otherwise noted)
45 v
Collector-Base Voltage Emitter-Base Voltage
1
—25 ma
Emitter Current Total Device Dissipation (See Note 1) Total Device Dissipation at 100*C Free- Air Temperature
Total Device Dissipation at 150*C Free- Air Temperature Collector Junction Operating Temperature
11
•IMkaM
rw
MMJSfJffM At
JESEC
MfMm<
150 100 50
mw mw mw
+175*C
—o5*C to + 175*C
Storage Temperature Range
RvTC
v
25 ma
Collector Current
MVfJMN ttts^MSMni, Me MftJtMf
UfVI*
«ttt.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
= IN =I = N an, = 0, c = IN ma I K = E = IN Ma c = o = »CI = » ' = »C, = 30 = »CI = «• = »C. = « l K = IN »ce = » ¥ E1 = c = o pa »ct = » c = »CE = » ' c = IN »« = » » c = ¥„=»». c = l
c = 150 ma. Sn lc = 5N c = 150 ma. 1^ = 151 ma. = c = ma, = c = S ma, = = ma. c l
Sat Halt 11
40
Halt 11
21
aia
l
1
l
l
1
l
c = 5 «a, c = ma, c = 5 ma, lg = ma. c = ma, ma, c =
U
1.3
1.3
V
1.5
1.5
V
1
1
kc
14
34
24
34
tarn
1
1
kc
4
1
4
1
akm
1
1
kc
f
l
50
1
f
=
1
mc
1
=
1
mc
=
i
c
=
0,
o.
1
1
1
1
12: Tktia
paramttan mat) at rnaannO «ai| pain
o caati |i greattr
•ItMTcatai
Hwi
Iba
rajaM
tacaala.atl.
rW
5
3x
5x
io-4
IO"4
3>
5<
IO"*
IO"*
kc
1
kc
0.1
I.S
0.1
o.s
/xmaa
1
kc
0.1
1.0
0.1
1.0
jumka
1
kc
30
IN
SO
M0
1
kc
35
150
70
300
3.1
300 /uac, Daty Cyclt
2.5
25
2.5
35
3.S
35
N
Sm operating and twitching charactarirfc* for typa* 2N718A, 2N956, 2N1613, and 2N171 1
NOTE
300
40
1.5
1
E
IN
300
I.J
1
l
IN
1.5
5
l
»0
Sat Data 12
l
1
l
IN
Sat Halt 1!
= = = = = = 10 mc
l
120
«
2%.
Palla
25
af
N
•1
on paga 4-30.
vMtk matt
aa lack thai
kaMng
at daakllag doat aal caait
atcancy af rat
JEIEC n|liliral aata
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS IHSTIUMENTS RESEKVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIIIE.
POST OFFICE BOX 8012
DALLAS, TEXAS 79224
4-69
TYPE 2N1566 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 731 1958, MARCH 1973
FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS 60 V Min • V(BR)CEO .
•
hpE
-
•
60 to 200
mechanical data
THE COLLECTOR
IN
IS
ELECTRICAL CONTACT WITH THE CASE
mALL DIMENSIONS ARE
S3 "»
1
-
IN INCHES UNLESS OTHERWISE
1
SPECIFIED
0.W0MIW
f*
3
J-mj
OUTLMI IN TM« ZONE OPTIONAL
[TAIL* OF
LEADS
L-a
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE* 'absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted) 80 60 5
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds electrical characteristics at
Collector-Base
ICBO
Collector Cutoff Current
'EBO hc E
Emitter Cutoff Current
Forward Current Transfer Ratio
VgE
Base-Emitter Voltage
VcElsat)
Collector-Emitter Saturation Voltage Smalt-Signal
hie
Common-Emitter
l
Ib = 6.
VcE"5V,
l
l
hfe
V CE V CE V CE
Common-Emitter
Forward Current Transfer Ratio
=
5V,
See Note 3
T A =150"C
l
l
- B V,
l
10*
mA,
c =5mA,
See Note 3
60*
200*
See Note 3
0.35*
1.5*
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit °
NOTES:
1
Output Capacitance
f=1kHz
c =1mA f
80* -
1
kHz
.
c =5mA,
f=30MHz
Vcb -
l
E -
f
when the base-emitter diode is open-circuited. 175° C free-air temperature at the rate of 4 mW/°C. These parameters must be measured using pulse techniques, t^, = 300
ma
V V kn
200*
40
l
0,
1.8*
MA
60
c - 5 mA C - 5 mA,
V CE -5V, 6 V,
1*
See Note 3
T A - -55° C Small-Signal
100
C=
lc=10mA, lc=10mA,
- 5 V,
V
60* 1*
E= E -0,
lc - 5
l
V
80*
Ie
Input Impedance
Small-Signal
=
l
l
MAX UNIT
MIN
TEST CONDITIONS
c =10|iA, c =10mA, V CB - 40 V, Vcb = 40V, V EB = 5V, Vqe - 5 V, lB = 2mA, lB = 2mA,
Breakdown Voltage
Collector-Emitter Breakdown Voltage
Static
50 mA 600 mW —65 C to 200^0 230 C
2)
25° C free-air temperature (unless otherwise noted)
PARAMETER V(br)CBO V(BR)CEO
v v v
-
1
MHz
2
10*
pF
This value applies
2. Derate linearly to 3.
The JEDEC •
registered outline for this device
JEDEC registered deta.
is
TO-5. TO-39
This data sheet contains
all
falls
Ms,
duty cycle
< 2%.
within TO-5 with the exception of lead length.
applicable registered data in effect at the time of publication.
USES CHIP N23 PRINTED IN U.S.A.
4-70
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE BEST PRODUCT POSSIBLE.
BULLETIN NO. DL-S 693471, MAY 1963-REVISED AUGUST 1969
Highly Reliable, Versatile Devices Designed for
and
Amplifier, Switching
ma
from <0.1
to
Oscillator Applications
>150 ma,
•
High Voltage
•
Useful h FE
•
dc to
30 mc
Low leakage
Over Wide Current Range
'mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2NU20, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages.
"""HI"-!
THE COLLECTOR
TO-18
ELECTRICAL
IS IN
CONTACT WITH THE CASE TO-18
'absolute
maximum
2N696 2N697 UHettor-imitter Voltage
(Sm Nats
1)
Collector-Emitter Voltage
(Sm N«ts
2)
2N717 2N718A 2N730 2N718 2N731
60
60
40
40
75
60
75
60
75
75
50
40
50
30
50
50
5
5
7
5
7
7
5
CoDoctor Current
1.0
Total Dsviai Dissipation at (or below)
0.0
0.4
t
tt
S 25 C Free-Air Temperature Parentheses)—*>
Total Device Dissipation at (or below)
25*C Cos* Temperature (Sm Note Indicated in Parentheses)—o»
0.5
Operating Collector Junction Temperature
TMi volw apalln than
TMi viIm
9.
Urate llHMriv
10
l*t tat-Miltt«
(7)
<»)
(7)
(3)
(10)
(10)
1.5
1.8
2.0
3.0
3.0
t
tt
1.0
0.75
t
tt
175t
175tt
iKlitwt
Ma*
17S°C fna-elr lamtiranra at
llnaarly
tt
I75*C com
M
17S.*C
«. Darata
limriy
la
7. Darata
llnMrly ta
5.
trna-tlr
|I
H
)
li
aqnl
Is
tt (8)
(6)
«)
w
I")
(11)
0.75
1.0
1.0
1.7
1.7
w
200
200
•c
tt 200
to
Ira
tr
4.0
mw/C*.
mw/C*.
lamparanra it tkt ran tl
mw/C*.
at
taaparatara al Ida rata af 10.0 tanwaratara al
Ika
rata af
I. Darata
limriy
la
J00*C cut
taapantafa at
Hm
rata al
». Oarala
limriy
la
17S*C
fraa-tli
tamparalara
Iha
rata
llnaarly
ta
IN*C
fraa-tlr
tamttratim it tha rata af
11. Darata
llnaarly
ta
M0*C
cm
lamatnttra al
raelilarad
i.47
17S*C co«
II. Oarala
'ImUialH JEDEC
t
175tt
200
at
Hm
rata
at
af
mw/C*.
2.M mw/C*. 10.1
mw/C*.
1.9]
mw/C*.
4.54
mw/C*.
17.1
to
»75t 200°C
fTexat
Inttrumtati
fuaraataaf
•NOW, 1M1410, and INI 507 •am* dbtlpaHea at neutered
lamptralwa at It* rati tf 11.1
rata
w
t
1.0
aaaa-clrctltia'.
na
M0*C
fraa-tlr
w
1.8
ta
Darata llnaarly
4. Darata
0.8
(5)
-65°C
wbaa llu atm«iltir
0.8
t
1.S
thm. attliai
0.6
(3)
Storage Temperature Range
1.
0.5
0.5
1.0
2.0
100°C Cos* Temperature
1.
UNIT
7
1.0
tt
(«)
Total Device Dissipation at
DOTES:
2N9S6 2NI420 2N1613 2N17U 2N1S07
32
Emitttr-Bass Voltage
Indicated in
1
ratings at 25 °C free-air temperature (unless otherwise noted)
Collector-Base Voltage
(Sm Note
TO-5
1HU11
aaal
Ml 711 wHk
facton ikawa ia
ttT«ai
M4M0,
Mm
ttwwa
far tyaat
aaanerlata
aWtrttaf
aaal
NatM 10 aad
lattnimeah
ty»«
IK
to he tapaale el
guaraateet
II.
Hi
tyaat
1H717,
IM7IS, 1N710, aad 1M711 fa he caaaMa al Iha tame alttlaatlea «f nslttaiad aad thewa tar tyaat 1N71IA aad.lN*5e with aaaraartata dtratiaf fat-
tan ihawa
la Natal
7 aad
t.
mw/C*.
Ma.
USES CHIP N24
TexasINCORPORATED Instruments PO*T OFFICE BOX BOW
•
DALLAS. TIXA» 78882
4-71
,
TYPES 2N718A, 2N956, 2N1420, 2N1507, 2N1613. 2 N 17 11 N-P-N SILICON TRANSISTORS electrical characterUtlcs at
25°C free-air temperature (unless otherwise noted)
TEST CONDITIONS
PARAMETER
= 100 = = ma, = = 100 ma, K = c = 100 jUeOc = ° = V c = 30 = »CI = M » = V c, = = vc = = V CE = = V c = V CE = c = v CE = c = 100 ma. V CE = c = ma. V CE = c =
Collector-Base Brtakdown Voltagt
l
Celliclor-Emiltar Brtokdown Voltage
l
•lOICK
Collector-Emitter Brtakdown Voltage
l
'umbo
Emitter-Bast Brtakdown Voltagt
'ixicio
jua,l
c
30
c
0,
B
10 fi,
v,
l
,
Collector Cutoff Currant
Emitter Cutoff Current
Transfer Ratio
»,
l
E
to
»,
l
E
20
»,
R
5 »,
E,
Static Forward Current
»FE
60
'•
0,
l
10
M
U
75
See Note 12
=
T
A
=
A
V
30
30
SO
*
50
V
7
150't
1.0
1.0
100
SO
lit
M"
0.010
0.010
10
10
ISO'C
M« M«
M"
10
100 kf!
re
V
75
7
T
UNIT
25
100
0.01
l
10 v,
2N1S07 2NI7I1 2N1420 MIN MAX MIN MAX MIN MAX
See Note 12
E
'»
•ck>
2N1613 MIN MAX
E
,
Collector Cutoff Currtnt
2N718A
TO-S-o-
E
l
R
l
2N95S
TO-lS-t.
0.005
fia
20
10 fj>
(J"
»,
l
10 »,
l
10
See Note 12
10 «,
l
10
T
A
= -SS"C,
20
35
35
75
20
35
See Note 12
= = — = V CI = V C| = V CB =
Base-Emitter Voltage
»«s
Input Impedance
Small-Signal Common-Base
»rb
Reverse Voltage Transfer Ratio
Output Admittance Small-Signal Common-Emitter
"to
Forward Current Transfer Ratio Small-Signal Common-Emitter
K\
Forward Current Transfer Ratio
Common-Bast Optn-Circuit
«ob
Output Capacllanct
*
Input Capacitance
300
300
100
c
Set
12
40
l
c
Set
12
20
Stt
12
1.3
1.3
1.3
1.3
V
Stt
12
1.5
1.5
1.5
1.5
V
15 ma,
B
15 ma,
l
l
1
f
1
kc
24
34
24
34
l
ohm
10
l
5
f
1
kc
4
8
4
I
ohm
f
1
kc
»,
5 »>
'
,
l
,
5 y,
l
,
10 v,
l
5 v,
l
10 «,
l
Vc ,
=
VE ,
=
40
5 v,
10 v,
Common-Bast Optn-Clrcult «ib
100
300
l
Vc = Vc = Vc = V CE = V CE = V CE =
Small-Signal Common-Base
»c*
100
v,
10 »,
1,
Small-Signal Common-Bast
"lb
120
10
V CE l
Collector-Emitter Saturation Voltage
Note = ISO ma, Nott = 100 ma Nott c = 150 ma. Note c = 150 ma, = c = ma, = c = ma, = " = 'c
V CE
10
»,
10
v,
0.5 v,
l
c = c = c = c = c =
1,
l
=
=
c
1
mc
25
f
=
1
mc
BO
f
1
ma,
f
5
ma,
f
0,
5x 10-4
=
f
0,
3* 10-«
f
mo,
5 ma,
50 mo.
10*
4 io-
f
f
=
c
5>
= = = = = = 20 mc
5 ma.
1
3l
1
kc
1
kc
0.05
0.5
0.05
0.5
jtunho
1
kc
0.1
1.0
0.1
1.0
jumho
1
kc
30
100
1
kc
35
150
3.0
2.5
2.5
35
50
200
70
300
3.5
35
25
P>
80
Pf
operating characterUtlcs at 23°C free-air temperature PAfttMITM
CONDITIONS
TiST
Vc, NT Spot Moist Fljwt
R,
= 10 = 510
v, lc
O,
f
ro-ii—
2N9S6
K»-S—
2N1711
= 300 iu = kc
2N71SA
MAX
TYP
MAX
S
s
6
12
TIST
TO-3—a.
CONDITIONS
2N71IA 2N1613 TYP
Sot Figure
t, Total Switching Tintt
BOTE
12:
Thiw a
'Indicates
parameters mint bt measured using pul» techniques.
change grater than
JEDEC
the
required
accuracy ef
tin
PW
1*
5
20 300
ftm.
Duty Cycle
< 2%.
PuIm width must be such
UNIT
MAX 30
that halving or doubling does not
UK couh
mtoiurwrnnt.
registered data
*The referenced
figure
is
shown on page
4-30.
PRIMED
4-72
db
1
TO-lS-o>
•ARAM STIR
UNIT
2N161S
TYP
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TKXAS 7S222
IN U.S.A.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE 8EST PRODUCT POSSIBLE.
TYPES 2N1671, 2N1671A. 2N1671B. 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS BULLETIN NO. DL-S 683189, OCTOBER 1962-REVISED MAY 1968
Designed for Medium-Power Switching,
and Pulse Timing
Oscillator
• Highly and
Circuits
Stable Negative Resistance Firing Voltage
• Low Firing Current • High Pulse Current CapaUHies
•
Simplified Circuit Design
'mechanical data Package outline
is
similar to
JEDEC TO-5
except for lead position. Approximately weight
is 1
gram.
"All IfAOS INSULATED FROM CASE. NOTES
This zone is controlled
A.
malic
landing
The
for auto-
variation in
actual diameter within this zone shall
I
not exceed 8.010. B.
Measured Inn max. diameter ot
the actual device. C.
The
specified lead diameter ap-
plies in the zone between 0.050
0.250 from the base seat.
O.BOand l.Smaximum
and Between
of 0.021 diam-
Outside ol these zones the lead diameter is not controlled. eter is held.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
'absolute
maximum
ratings at 2S*C free-air temperature (unless otherwise) noted) JNi«7i
iNiiee
2NIS7IA
2NH71S
— 30v
Emitter-Base Reverse Voltage Emitter-Base Reverse Voltage below Interbase Voltage
140*C Junction Temperature
-30 v .'.'.'.'
RMS Emitter Current DC Emitter Current
\
1. Caaaclrtr
diidwit
1.
Baralt llMorlr It
I.
Ttni iMtnniMii
4.
Tun
'Indicates
JEDEC
— IS id
tc It", 30
MlH
140*C frtMh Ituptrah.™ gwrarilni
tnttHwiti gai'MIMi •
•
mailman
mxtimm
Him-
ttltl
laltrem
it tat rait t) J.t
•ptratlai
amr
m/*C.
tmatfatan
tl
(
diuiaalian aurlt at
1NH7I
17S*C
win
Irti-alr.
ttly.
InalM If uNnnl
MMfml
Btratt llnteri>
rtilittnu it tl IIm
35 y 70 ma
\
Peak Emitter Current (See Note 1) .'!!!.' Peak Emitter Current below 140*C Junction Temperature Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Notes 2 & 3) Operating Temperature Range (See Note 3) Storage Temperature Range (See Note 4) Lead Temperature Xi Inch from Case for 10 Seconds
ROTES:
35 v 50 ma 2a
450 mw _ 65*C — 65°C 260°C
2a 450 mw # to 140 C to 150*C 2&0*C
ciKaHrf.
cm
rait tf
1
= O.H*C/am.) m»/*C.
iNmmji maatratun it I7S*C.
rt|iiltrtd data
TexasINCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 78223
4-73
TYPES 2N1671, 2N1671A, 2N1671B. 2N2160
BAR -TYPE SILICON UNIJUNCTION TRANSISTORS
P-N
'electrical characteristics at PARAMITill r
N
Static laftrfctM
TfST talltiact
Inlrtmk StaaMf
l|2(me
MiAillM UttltCM Cwrml
»BB =S..I,
'mo
E«ftttr
Sm
l
l
EaittOT
E"*"^ totonH—
Mbr-ftM
v
y
fmm Cwrant
raA-Mut
r
H
Cumat ftltaft
EniltH Carnal
l«*0»» Ntk
CONDITIONS
=
Mto
If
ylti(Mt1
23 °C free-air temperature
M» VftHfft
Ff|«rt
2NU71A
JN1471
1NH71B
MAX
3N31aO
MAX
MAX
MIN
4.7
».l
4.7
t.l
4.7
t.l
4.0
It
•.47
Mi
0.47
0.M
0.47
0.U
0.47
ON
a
u
a
4.0
MIN
UNIT
MAX
MIN
MIN
Mi
1
= 10». = SO«IO M = »».!„=• 1,
«U|, »
»««=»•
"bb ='•'. If = »"• V B „ = »»,«„ = 1NO
=
N
at
-ii
-C.I
-11
l»
IS
25
<
IS
l>*
5
S
5
a -»
•J
t.l
=»a
v, »», i„ Sm Flam 1
V
•
1
1
i
•
M
1
»
•Indlcaln JEOEC rMjslWM) 0lt>
PARAMETER MEASUREMENT INFORMATION fi
B
— Intrinsic
—
Standoff Ratio
V
of the peak-point voltage,
+10V
V I7H + V F*
wrter *
vf
'*
,
parameter
This
is
defined
in
terms
by means of the equation: V_
about 0.56
—7)
25*C and decreases
at
volt
with temperature at about 2 millivolts/ deg-
The
used to measure
circuit
C and
cuit, R,,
lator,
To
.
use
the
make
button then
is
"cat"
button
the current meter
released and the value of 71
=
1
71
and
pushed,
is
M, read
full
scale.
R,
it
The "cal"
read directly from
is
corresponding to full-scale deflection of
M 1N457, or equivalent, with the following characteristics;
R
cir-
automatically subtracting the voltage
the
0,:
l
= 0.565 V B = 50 pA, < 2 ?k ft VR = » V at
l
-TEST CIRCUIT FOR INTRINSIC STANDOFF RATIO
20
the figure. In this
in
100 VF
1
circuit,
adjusted to
the meter, with
FIGURE
shown
the remainder of the circuit serves as a peak-voltage
= ISO na. c = 500 no. c = 150 ma. c = 150 ma, Sn = c = m = c = m = c = m c
l
10
5 »,
l
10
l
»,
5 v,
l
35 75
20
35
20 1.3
1.3
1.3
V
1.5
1.5
1.5
V
l,
f
1
kc
24
34
24
34
oam
l,
1
1
kc
4
1
4
a
ohm
i,
I
1
kc
3x
5i
10-4
io-«
3>
Sx
10-4
10-4
1
a,
f
l
5 n a,
f
l
50 na,
1
f
=
1
IK
25
f
=
1
mc
M
V E,
=
0.5 »,
l
c
5
m I,
f
'
••
=
0,
1
kc
1
kc
0.1
0.5
0.1
0.5
jUjnho
1
kc
0.1
1.0
0.1
1.0
jLimno
1
kc
30
100
50
200
1
kc
35
150
70
300
TEST
'Indicates
JEDEC
«e
= =
parameters must ba measured using puis* techniques. graatar
than
tha
required
accuracy of
2.5
3.0
3.5
2.5
15
35
25
•1
to
M
and 2N613 on p gees 4-30 or 4-72.
V«
change
300
100
5
c
=
300
1.3
I
'e
10 »,
100
1.5
1
'° "'
5 ..
300
Nate 12
1
=
10 »,
100
See Nttt 12
a,
»CI
NF Spot Noise Figuro
Than
M"
40
5 n a,
l
5 '•
120
l
=10v,
2N718A
40
Sea Note 12
tei nperature
TO-1S—
a
0.005
100
20
= = = = = = 20 mc
V CE
10 v,
PARAMETER
12:
1"
1
1
operating characteristics at 2S°C free-air
NOTE
»"l
/*•
35
Sat Note 12
l
= 'c = c = C = c = c =
Operc-Crrcoil
Output Capacltanca
•b
10 »,
.
Forward Currant Tramftr lotla
ob
Sua Note 12
¥ C|
Forward Currant Tranitar tatla
n nl
10 tea,
= »CI = V cf = V CE = ¥ CE =
Voltage Tronsfer (alio
Small-Signal
jia
l
l
IS ma,
Output Admittance
r«
10
20
«,
IS ma,
Small-Sianal Common-Emitter h
IM 0.010
0.01
»,
1,
Small-Sianal
*ob
50
10
10
1,
inini
100
10
I
1
l>x
Sea Mala 12
Input lm|Mdanii
rb
1.0
kfl
10
CollKtor-Emitltr Saturation Voltage
Small-Signal h
1.0
0.010
A = 150'C
I
late-Emitter Voltage
Small-Signal
"ib
T
1
7
= ISO'C
TA
I>.
tt
a 50
30
30
50
7
0,
E
20 »,
Collector Cutoff Current
10 «.
h
See Mate 12
( 1,
UNIT
¥
75
60
25
l
I
2N1S07 2NI711 2NI420 MIN MAX MIN MAX MIN MAX
M
75
E
I«
l
2NIS13 MIN MAX
100 jua,l
E
.,
Collector Cololf Current
2N718A
TO-S-t-
See dele 12
0.
11
2N93*
TO-lS-e.
c =lMiia.'t
Cellecter-lase
clo
ms
=« = «a, = = c = 100 ma, « K = = c = »CI = 30 = V c , = 30». V C1 = M», E = V C = *•'. = = loo « v CE = = V C = V CE = pa c = v CE = c = 100 V CE = c = » v CE = c =
Ireakdown Voltage
'iKICOO
l
2N1711
the
10
CONI ITIONS
v, lc
510 n,
PW
5
=
2N95« 2N1711 TYP MAX
fJ.0
5
i
300
300
TO-S
1
2N1613 TYP
UNIT
MAX 12
db
kc
sec. Duty Cycle i
1
2N71SA
5 2%.
Pulse width must be such that holv ng or d aubling does
25°C free-air temperature (unless otherwise noted)
electrical characteristics at
TCMt-»
2N1S93.
MIN c
=
100 (JM,
I
l
c
=
30 ma,
1,
Breakdown Voltagt Collector-Emitter
"(BtlCtO Inokdown Voltage Collector-Emitter
v |Ht|CER
l
Emitter-Base
V|WIEIO
Breakdown Voltage
n
100
/*a.
E
60 v,
73
Colliclor Cutoff Current
'cio
Emitter Cutoff Current
VE
,=
I
»,
l
lp
= V CE = V CE =
Static Forward Current
»«
Transfer Ratio
N
See Note ii
MAX
MIN
MAX
MIN
UNIT
MAX
120
100
100
V
M
60
40
V
100
SO
10
¥
7
7
7
V 1
5
IM
2
=
TA
m
200
I50°C
U = 150»t =
IA
0,
150-C
0.010
0.010
15
15
i* tio
0.010
ia
15
l»o
pa
l
iia
0.010
0.010
0.010
i
10 »,
10
a,
0.
E
|
5v,
v CE
io
m
0,
*,
¥„=!». 'ho
See Kali 11
0,
!.
=90v,
V C8
=
120
MIN
>r.
1
l
E
= =" lr = =• = E E = = . = • = C = « c = o c — c = c =
= ma. = 100 = ma. E V C| = V CB = 40 V Ci = V ct = 75v, V CB = My, c
l
Breakdown Voltage
=0
l
Collector-Bast
*(B|CiO
MAX
2N871 2N1890
2N870 2N1889
2N720A
2N720
TO-39-*
TEST CONDITIONS
PARAMETER
1,
10v,
l
100 (ia
l
10 ma.
l
10 ma, T
See Noli 11
= - SS'C,
A
20
20
35
35
20
20
See Note 11
= = ma. = mo. = ma, = ma, V c = 5», vc = io».
v« Base-Emitter Voltage
«K
Collector-Emitter
'cHtetl
Saturation Volago
Small-Signal
c
l
c
1,
15
|
1,
5
l
1,
15
l
Input Impedance
Small-Signal
,
VC
Common-Base "rb
*<>*.
t
,
Common-Base
kib
,=
Reverse Voltagt
¥ CI
Transfer Ratio
Small-Signal
Output Admittance Smalt-Signal
Common-Emitter »fo
Forward Current Transfer Ratio
S.,
120
40
11
See
1.3
11 11
l
1
1
1
1
5
f
1
1
1
l
c
l
c
=
5 ma,
S
11
So>
20
1
=
1
I
kc
1
kc
vc ,
=
io»,
1
c
V CE
=
S..
l
c
=
1
mo,
I
=
1
kc
35
a=
'0«,
l
c
=
5 mo,
1
=
1
kc
45
»CE
=
,0 »
c
=
50 ma,
f
=
20 mc
2.5
VC ,
=
10v
V
ma.
1
5 ma,
f
= =
1
kc
f
30
20
10
4
0.1
120
40
120
100
300
0.9
0.9
0.9
V
1.3
1.3
1.1
i
1.2
1.2
1.2
¥
5
5
5
¥
30
ohm
30
20
6
4
30
20
1
4
ohm 1.5 I
1.25 x
1.25 x
2.5 I
= =
5 «-
40
11
l
=10»,
»C.=
Common-Base
"ob
= ISO ma. Nota = 50 ma, See Nota c = 150 ma, Sm Nota c = 50 ma, S« Nota Nota c = 150 ma, = = kc ma, c = = kc mo, c = ma, = kc c
l
5
\
10-«
,0-4
io-"
10-4
3x 10*
1.5 x
0.5
0.5
0.5
0.3
jumho
1.0
0.5
0.5
0.3
pmho
100
1.5
1.5
30
100
50
200
45
45
150
70
300
2.5
2.5
30
100
I
10-«
10-4
10-«
Small-Signal
Common-Emitter
K\
Forward Current
t
3.0
Transfer Ratio
Common-Base Open-Circuit
<<*
=
l
0,
f
E Except 2N720:
1
— =
1
mc 20
15
15
15
P'
05
•5
05
05
of
140 kc
Output Capacitance
Common-Base
VE
Open-Circuit
Cib
,=
0.5. ,
=
0,
1
Eic.pl 2N720:
1
l
c
= mc = 140 1
kc
Input Capacitance
NOTE
11: These
Pulse
<
<
2%. 300 psec, Ooly cycle PW greater than the must bo such that halving or doubling does oat couso a change
paramours must bo moasurod using palso tochnlquos. width
required accuracy of the measurement.
•Indicates
JEDEC
registered data.
PRINTED IN U.S.A.
4-78
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N910.
2N911, 2N912. 2N1973. 2N1974. 2N197S
N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 733661, MAY 1963-REVISEO MARCH 1973
HIGHLY RELIABLE, VERSATILE DEVICES CHARACTERIZED ESPECIALLY FOR SMALL-SIGNAL APPLICATIONS •
High Voltage •
•
Useful
•
Low
Leakage
hpE Over Wide Current Range
Both Common-Emitter and Common-Base Small-Signal Characterization
mechanical data 2N910. 2N911, 2N912 t
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
IUOS
m l-COUICTOt
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
l-WALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE* 2N1973. 2N1974. 2N1975
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at
25°C
free-air
temperature (unless otherwise noted)
2N910 2N911 2N912 Collector-Base Voltage
« «
Collector-Emitter Voltage (See Note 1 ) Collector-Emitter Voltage (See Note 2) Emitter-Base Voltage
2N1973 2N1974 2N1975 lOOvl » 80 v* » -60v*-
_7v*-
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Notes 3 and 4) 0.5 w* 8 w* Continuous Device Dissipation at (or below) 25°C Case rt'o w* . 18w Temperature (See Notes 5 and 6) \3 W * Storage Temperature Range —65°C to 200°C* Lead Temperature 1/16 Inch from Case for 10 Seconds « » 300°C NOTES: 1 This value applies whan the base-emitter resistance R BE < 10 ft. 2. This value applies when the base-emitter diode is open-circuited. 3. For 2N910, 2N91 1, and 2N912. derate linearly to 20O°C free-air temperature at the rata of 2.86 mw/°C 4. For 2N1973, 2N1974, and 2N1975, derate linearly to 20O°C free-air temperature at the rate of 457 mw/°C 6. For 2N910, 2N91 1. and 2N912. derate linearly to 200° C case temperature et the rate of 10.3 mw/°C 6. For 2N1973 2N1974, and 2N1976. derate linearly to 200°C case temperature at the rates of 57.1 mw/°C for the 10-watt rating and 17.2 mwrC for the 3-wett (JEDEC registered) rating. •JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication •The JEDEC registered outline for these devices is TO-5. TO-39 falls within TO-6 with the exception of lead length. .
T This
value
is
guaranteed by Texas Instruments in addition to the
TWO TRANSISTORS IN ONE PACKAGE FOR DIFFERENTIAL AMPLIFIER APPLICATIONS •
Medium Power
•
High Operating Voltage
'mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designate true position. Laads having maxidiamatar (0.019") maasurad in gaging plana 0.064" +0.001" -0.000" balow tha saatlng plana of tha davica shall ba within 0.007" of thair trua position ralativa to a maximum width
r-Mn
mum
tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONSARE IN INCHES UNLESS OTHERWISE SPECIFIED
t Applicable to
'absolute
2N2223 and 2N2223A
maximum
only. Registered
2
COLLECTOR
minimum dimension
1
1
for
2
2N2060
Is
0.140.
ratings at 25° C free-air temperature (unless otherwise noted)
2N2223 2N2223A
2N2060
EACH
TOTAL
EACH
TOTAL
UNIT
TRIODE DEVICE TRIODE DEVICE Collector-Base Voltage
Collector-Emitter Voltage (See Note
1
Collector-Emitter Voltage (See Note 2)
Emitter-Base Voltage
100
100
80
80
60
60
V V V
V mA
7
7
Continuous Collector Current
500
500
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 3)
O.S
0.6
0.5
0.6
Continuous Device Dissipation at (or below) 25° C Case Temperature (See Notes 4 and 5)
1.5
3
1.6
3
0.86
1.7
0.91
1.7
Continuous Device Dissipation at 100"C Case Temperature Operating Collector Junction Temperature
200
Storage Temperature Range
-65°C
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1.
2. 3. 4. 5.
200 to
W W W •c"
200"C
300"C
These values apply when the base-emitter resistance (RgE' is equal to or less than 10 ohms. These values apply when the base-emitter diode is open-circuited. Derate linearly to 200° C free-air temperature at the rate of 2.86 mW/°C for each triode and 3.43 mW/°C for total device. Derate 2N2060 linearly to 200°C case temperature at the rate of 8.6 mW/°C for each triode and 17.2 mW/°C for total device. Derate 2N2223 and 2N2223A linearly to 200° C case temperature at the rate of 9.1 mW/°C for each triode and 17.2 mW/°C for total device.
6.
The terminals of the triode not under
7.
This parameter must be measured using pulse techniques.
8.
The lower of the two hpg reading is taken as hp^-j. This parameter is measured in an amplifier with response down 3 dB
9.
measurement of these 300 ms. duty cycle < 1%.
test are open-circuited for the t
w=
at
characteristics.
25 Hz and 10 kHz and
a high-frequency rolloff of
6
dB/octave.
JEDEC
registered data. This data sheet contains
all
applicable registered data in effect at the time of publication.
TexasINCORPORATED Instruments POST OFFICE SOX 8012
MIN C -100»«A, E See Note c «30mA, Ib = 0, lC- 100 mA, R B E -10", See Note C=Q E = 100uA,
Collector-Base
Collector-Emitter
Breakdown Voltage
V(BR)CER V(BR)EBO
Collector-Emitter
Breakdown Voltage
ICBO
Collector Cutoff Current
Emitter Cutoff Current
l
l
l
Emitter-Base Breakdown Voltage
V CB -80V, V CB -80V,
l
VEB-5V,
Static
VBE
Base-Emitter Voltage
l
VCE(sat)
Collector-Emitter Saturation Voltage
l
Small-Signal
l
l
V CE -5V, V CE -SV,
hFE
hjb
7
60
60
7
80
80
|
l
Forward Current Transfer Ratio
MAX
2N2223A UNIT MIN MAX
100
-
Breakdown Voltage
v (BR)CBO v (BR)CEO
2N2223
2N2060
TEST CONDITIONS
PARAMETER
l
I
E = E °0,
Ta-
75
15
90
25
150
1 mA
40
120
50
150
50
200
lc = 10
B =
mA
-
See Note 7
50mA lc-50mA
lc =
mA,
5mA,
MA nA
25
V CE
" 6 V.
nA
15
30
lC
= 5
10
C= C -10cA C '100mA
VCE-5V, B
150
Common-Base
20
0.9
0.9
1.2
1.2
30
20
30
Input Impedance Small-Signal
h rb
Common-Base
Vcb"5V,
Reverse Voltage Transfer Ratio Small-Signal
h b
l
c =1mA,
f
-
3x
kHz
1
10-4
Common-Base
0.5
Mmho
Output Admittance Small-Signal
Common-Emitter
Input Impedance Small-Signal hfe
1000 4000
^^
Common-Emitter
V CE -5V,
Forward Current Transfer Ratio Small-Signal
l
f=1kHz
c =1mA,
50
Common-Emitter
150
40
200
Mmho
16
Output Admittance Small-Signal
hfel
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit
C bo
Output Capacitance
Common-Base Open-Circuit Cibo
Input Capacitance
MHz
2.5
VcE
=
10V.
lc=50mA,
V CB
=
10V,
l
0,
f-
1
MHz
15
V EB
= 0.5V, lc = 0.
f-
1
MHz
85
E =
f
- 20
85
pF
triode matching characteristics
Static
hpE2
Gain Balance Ratio
rV BE
i
- V BE 2|
A(V BE1
l
Base-Emitter-Voltage Differential
-V BE2
AT A
)
MIN
V CE - 5 V, c » 100 mA, See Note V CE = 5 V, lc= 1 mA, See Note V C E - 5 V. c = 100 mA V C E " 5 V, c = 1 mA V CE = 5 V, c = 100 uA, From T a c -55°CtoT A = 125''C
Forward Current
hpEI
2N2060
TEST CONDITIONS
PARAMETER
Base-Emitter-Voltage-Differential
8
0.9
1
8
0.9
1
l
5
l
5
l
Temperature Gradient
2N2223
2N2223A UNIT
0.8
0.9
MAX MIN MAX MIN MAX
10
1
1
15
5
25
25
mV uV/°C
'operating characteristics at 25° C free-air temperature individual triode characteristics (see note 6)
•JEDEC
2N2060
TEST CONDITIONS
PARAMETER = 300 )iA,
Spot Noise Figure
V CE
= 10 V,
Average Noise Figure
Vc E
= 10 V, lc =
l
c
Rp
=
300uA, R G -
510 1
fl. f
-
1
MAX
UNIT dB
kHz
kn. Noise Bandwidth - 15.7 kHz, See Note 9
registered data
PRINTED IN U.S.A.
4-82
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE BEST PRODUCT POSSIBLE.
ALL JEOEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at 25° C case temperature (unless otherwise noted)
Collector-Base Voltage 1 )
120 V* 65 V*
Collector-Emitter Voltage (See Note 2)
80 V*
Collector-Emitter Voltage (See Note
Emitter-Base Voltage
(or below)
Continuous Device Dissipation at
(or
25°C Free-Air Temperature (See Note
3)
below) 25°C Case Temperature (See Note 4)
V* A*
1
W*
Sl^ 5 W
Storage Temperature Range
-65°C
to 200°C*
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1
7
Continuous Collector Current Continuous Device Dissipation at
300°C*
This value applies when the base-emitter diode is open-circuited. This value applies when the base-emitter resistance RbE ^ ^0 ^Derate linearly to 200°C free-air temperature at the rate of 5.71 mW/°C 4. Derate the 10-watt rating linearly to 200° C case temperature at the rate of 57.1 rating linearly to 200°C case temperature at the rate of 28.6 mW/°C. 1.
2.
3.
*The JEDEC
*JEDEC
registered outline for these devices
is
registered data. This data sheet contains
*This value
is
guaranteed by Texas Instruments
mW/°C. Derate
the 5-watt
(JEOEC
registered)
TO-5. TO-39 falls within TO-5 with the exception of lead length. applicable registered data in effect at the time of publication. addition to the JEDEC registered value which is also shown.
all
in
USES CHIP N23
TexasINCORPORATED Instruments POST OFFICE BOX 5012
DALLAS. TEXAS 75222
443
TYPES 2N2102. 2N2102A N-P-N SILICON TRANSISTORS
'electrical characteristics at 25° C case
temperature (unless otherwise noted) 2N2102A MAX MIN
2N2102
TEST CONDITIONS
PARAMETER Breakdown Voltage
V(BR)CBO v (BR)CEO V (BR)CER V(BR)EBO
Collector-Base
VRT
Reach-Through Voltage
l
Breakdown Voltage
I
Collector-Emitter
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
lEBO
Emitter Cutoff Current
Static
hFE
l
Collector-Emitter Breakdown Voltage
l
c = 100 mA, c « 100 mA. c = 100 mA, E - 0.1
120
120
65
65
R B E " 10 n. See Note 5
80
80
7
7
lg - 0,
c
mA, -
-
.
Forward Current
VCE-10V, VCE-10V. V C E=10V.
V BE
Base-Emitter Voltage
lB =
VCE(sat)
Collector-Emitter Saturation Voltage
l
h ib
Small-Signal
Common-Base
Reverse Voltage Transfer Ratio Small-Signal
h b
Common-Base
Output Admittance Small-Signal
hfe
Common-Emitter
Forward Current Transfer Ratio
M
Small-Signal
Common-Emitter
Common-Base Open-Circuit Common-Base Open-Circuit
NOTES:
VEB
Input Capacitance 5.
6.
B = 15 mA,
lE = 0,
T C =150"C
I
l
2
nA
2
2
HA nA
2
2 10
10
20
20
10mA
c c - 10 mA,
35
35
20
20
-
l
V V V
2
C =10«A c =100(lA
l
V V
120
120
ic-o
0-
sv
40 25
IC-1A
10
mA c lc = 5 mA IC=1 mA lc" 5mA c =1 mA lc = 5 mA c = mA IC = 5 mA -
1
l
-
40
120
120
25 10 1.1
1.1
V
0.5
0.3
V
24
34
24
34
4
8
4
8
3X10-"4 f
-
kHz 0.08
0.08
1
- 20
MHz
0.5 1
a
3X10~» 3X10-4
3X10-* 1
l
= 10V,
=
c « 150 mA
lc" 500mA
l
V C B=10V,
Output Capacitance
Cibo
See Notes
E =
l
lc- 150mA, See Note 5 IC* 150 mA, See Note 5
15 mA,
V CE
Forward Current Transfer Ratio
Cobo
'E"°-
l
V C E - 5 V, V C E= 10 V, V C E = 5 V, V CE - 10 V, V CE " 5 V, V C E = 10V, V C E - 6 V, V C E-10V,
Common-Base
Input Impedance
h rb
=o
UNIT
T C - -55°C
Transfer Ratio
Small-Signal
MAX
See Note 5
E=
l
v EB(fl) = 1 5V V C B - 60 V. Vcb = 60V, VEB = 5 v Vce-IOV. VCE-10V. Vce-IOV, V C E = 10V,
MIN
0.08
0.5
0.08
1
30
100
30
100
35
150
35
150
ymho
3
l
c = 50 mA,
f
l
E -0,
f=1MHz
15
15
pF
l
c =0,
f-IMHz
80
80
pF
3
These parameters must be measured using pulse techniques. t w - 300 Ms, duty cycle < 2%. V RT is determined by measuring the emitter-base floating potential. V EB (fl). Collector-base voltage, v EB(fl)- 1-8 V; this value of V CB -
V CB
,
is
increased until
'thermal characteristics UNIT
PARAMETER R 6JC
Junction-to-Case Thermal Resistance
R 9JA
Junction-to-Free-Air Thermal Resistance
•JEDEC
4-84
35 175
registered data.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
T/W
J
TYPES 2N2102. 2N2M2A N-P-N SILICON TRANSISTORS 'operating characteristics at 25° C case temperature
TEST CONDITIONS
PARAMETER
MIN
MAX
MIN
MAX UNIT
UNIT
Vce-IOV. Ic- 0.3 mA, f-1kHz. Rq " 1 k «
Spot Noise Figure
'switching characteristics at 25° C case temperature
TEST CONDITIONS
PARAMETER Total Switching
See Figure
Time
1
30
•PARAMETER MEASUREMENT INFORMATION
-50 V
O
+20 V
O OUTPUT INPUT
1
» 1
kR
SW
*—Wv—O -50 V 1N3064
J_
WAVEFORM AT POINT A (See Notes 7
-1 V
10%
-v
r-;5
and 8)
™-
+20V
OUTPUT
g,^
WAVEFORM
| [
+ 18
V
— 1
f*>ton-an
toff-
tT " ton + toff
FIGURE 1 -SWITCHING TIME MEASUREMENT CIRCUIT
NOTES:
supplied by a mercury relay pulse generator with the following characteristics: t, < 1 ns, Adjust R1 and the input pulse emplitude to obtain the specified voltage levels at Point A. 2-k« probe. 8. Waveforms are monitored on a sampling oscilloscope
The t,.
•JEDEC
73
input
- 15
ns.
waveform Z out - 50
is
tf
<
1
ns,
fl.
registered data
PRINTED IN U.S.A. Tl or
cannot assume any responsibility for any circuits shown represent that they are free from potent infringement.
HOW
TO MAKE CHANGES »T ANY TIME TEMS SUFfLV THE IEST rlOOUCT POSSIBLE. III OIOEI TO IMftOVE DESIGN AND TO INSTRUMENTS lESEDVES THE
Instruments TexasINCORPORATED POST OFFICE BOX 9012
DALLAS, TEXAS 75222
4-85
TYPES 2M671. 2N1671A. 2N1671B. 2N2160 P-N BAR -TYPE SILICON UNIJUNCTION TRANSISTORS "ULLETIN NO. DL-S 683189, OCTOBER 1962-REV ISED MAY 1968
Designed for Medium-Power Switching, and Pulse Timing Circuits
Oscillator
• Highly Stable Negative Resistance and Firing Voltage • Low Firing Current • High Pulse Current Capabilities • Simplified Circuit Design mechanical data
JEDEC TO-5
Package outline similar to
except for lead position. Approximate weight
gram.
1
FROM CASE.
'ALL LEADS INSULATED
NOTES
A.
This zone
matic
is controlled for auto-
handling.
The
variation in
actual diameter within this zone shall
1
not exceed 0.010. B. 0.0ft
MM Neto
Measured from max. diameter of
the actual device
B
C.
The
specified lead diameter ap-
plies in the zone between 0.050 and
0.250 from the base seat.
Between
0.250 and 1.5 maximum of 0.021 diameter is held.
Outside of these zones
the lead diameter is not controlled.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
*
absolute
maximum
ratings at 25°C free-air temperature (unless otherwise noted) 2N1671
Emitter-Base Reverse Voltage Emitter-Base Reverse Voltage below Interbase Voltage
RMS
DC
1
40°C
—30 v
Junction Temperature
35 v 50 ma
Emitter Current
1.
Capacitor discharge
— 10
2.
Demit
lintarly to
140°C
3.
Ttxot
lostrumonts
fit
or
lets,
30 mill
«
lets
— tool
4. Texas Inslraattnts guarantees a
a maximum operating
maximum
mw/°C.
(2111471 itritl only, thermal rtiittanct to
com
temperature of 175°C free-air. Derate Ifneorly at the rate of 3
storage temperature of 175°C.
indicates JEDEC registered data
4-86
2a
&
3)
."
.
450 mw — 65°C — 65°C 260°C
internal* power dissipation moil bt limiltd by txlomal circuitry.
fret-air ttmptrfltvrt oi tht rolt of 3.9
guarantees
35 v
70 ma
Emitter Current
Peak Emitter Current (See Note 1) Peak Emitter Current below 140°C Junction Temperature Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Notes 2 Operating Temperature Range (See Note 3) Storage Temperature Range (See Note 4) Lead Temperature X« Inch from Case for 10 Seconds
NOTES:
2N2160
2NH71A 2NH71B — 30 v
Instruments Texas INCORPORATED POST OFFICE BOX 5012
and the unijunction transistor form a relaxation osciland ihe remainder of the circuit serves os a peak voltage
R,, C,
cuit,
lator,
detector with the diode D, V,.
parameter
,
with temperature at about 2
The
This
V p by meant
of the peak point voltage,
the
To use
circuit,
the
automatically subtracting the voltage "cal"
button
button then
71
full
and
scale.
Rj
is
The "cal"
the value of rj is read directly from corresponding to full-scale deflection of
and
released
it
the meter, with
pushed,
is
adjusted to rnoko the current meter M, read
1
100 ph. D,:
VF
M, 100 pA
Full
Scole
FIGURE
l
I
-
K
1N457, or tquivelfnt, with tht foHowine (hargtteristici:
=
0.5.S
<
2
m*
V •'
it
Vr
l
= SO = WV
f
fiA,
TEST CIRCUIT FOR INTRINSIC STANDOFF RATIO
20
(17)
EMITTER—BASE-ONE VOLTAGE
V
vs
EMITTER CURRENT
Vt.11,
FIOURE 2
,
3
- V ol
,
TIST CIRCUIT
FIOURE 3
- GENERAL
STATIC EMITTER CHARACTERISTIC CURVE
PRINTED IN U.S.A. Tl or
cannot assume any responsibility lor ony circuits shown represent that they are free from potent infringement.
TEXAS INSniWENTS RESERVES THE EIGHT TO MAKE CHANGES AT ANT TIME SUPPLY THE KST FtOOUCT POSSIBLE IN ORDER TO IMKOVE DESIGN AND TO
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 78222
447
TYPES 2N2192, 2N2192A, 2N2193. 2N2193A. 2N2194. 2N2194A. 2N2243, 2N2243A N-P-N SILICON TRANSISTORS BULLETIN NO. OL-S 733571, MARCH 1B63-BEVI8ED MARCH 1973
FOR MEDIUM-POWER SWITCHING
AND AMPLIFIER APPLICATIONS •
High Breakdown Voltage Combined with Very Low Saturation Voltage
•
hFE-Guaranteed from 100 ms to
1
amp
mechanical data
THE COLLECTOR
ELECTRICAL CONTACT WITH THE CASE
IS IN
UNUU OTHWWM
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
2N2192 2N2192A 60* 40*
60* 40*
2N2243 UNIT 2N2243A
Emitter-Base Voltage
5*
80* 50* 8*
Collector Current
1*
1*
1*
1*
a
0.8*
0.8*
0.8*
0.8*
w
iot
10*
10t
10t
2.8*
2.8*
2.8*
2.8*
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Total Device Dissipation at (or below)
25°C Free-Air TemperaturetSee Note 25° C Case Temperature (See Note 3)
-65°C
V V
w
200°C* 300°C*
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds This value applies when the base-emitter diode it open-circuited. Derate linearly to 200°C free-air temperature at the rate of 4.57 mw/°C. 3. Derate the 10-watt rating linearly to 200° C case temperature at the rate of 57.1 rating linearly to 200° C case temperature at the rate of 16 mw/°C. 1
V
5*
120* 80* 7*
2)
Total Device Dissipation at (or below)
NOTES:
2N2193 2N2194 2N2193A 2N2194A
to
.
2.
The JEDEC 'JEDEC T
is
registered)
falls within TO-5 with the exception of lead length. applicable registered data in effect at the time of publication. guaranteed by Texas Instruments in addition to the JEDEC registered value which is also shown.
The input waveform is supplied by a generator with the following characteristic*: t r - 20 nsec, tf 20 nsec, Z ou t " 50 SI, PW - 10 |«ec, PRR - S kc. Waveforms are monitored on an oscilloscope with the following characteristics: t r <14nsec, Rj n - 10 MSI, Cj n -11.5pf.
JEOEC
registered data
PRINIE0 IN U.S.A.
4-90
Texas INCORPORATED Instruments POST OFFICE »OX 9012
DALLAS. TEXAS 7SS22
Tl
•r
represent
(hot
they sre
free
for
any
circuits
37
shewn
frem potent infrineemtnt.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMfROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
FOR MEDIUM-POWER SWITCHING AND AMPLIFIER APPLICATIONS • 80 V Min (A5T2193) High V(BR)CBO •
•
hFE Guaranteed from 100 j/A to
•
fT
•
Electrically Similar to
.
.
.
50
1
A
MHz Min 2N2192A. 2N2193A
mechanical data using a highly
designed for this purpose, These transistors are encapsulated in a plastic compound specifically withstand soldering temperatures w.thout mechanized process developed by Texas Instruments. The case will high-humidity conditions and are capable of meeting deformation. These devices exhibit stable characteristics under
MIL-STD-202C, Method 106B. The transistors are
insensitive to light.
no t.p.—
1_ LS i
aoo5 n
NOTES:
A B
Lead diameter is not controlled in this area. of their true POS'tions Leads havin fl maximum diameter (0.019) shali be within 0.007 of the device relative to measured in the gaging plane 0.054 below the seating plane
a maximum-diameter package. C. All dimensions are in inches.
absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
A5T2193
A5T2192 ^0
Collector-Base Voltage
Collector-Emitter Voltage (See Note
™
1)
*
°jj*
Emitter-Base Voltage
^
Continuous Collector Current
Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 3) Continuous Device Dissipation at (or below) 25°C Lead Lead Temperature (See Note 4) Continuous Device Dissipation at (or below) 25°C Case and .
.
.
....
_
—
Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1.
2 3.
*~ "|
Thir^tinTappne. with the entire case (including the leads) temperature at the rate of 12.8 mW/°C. T Trademark of Texas Instruments $U.S. Patent Mo. 3,439,238 4.
maintained
at
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
DALLAS, TEXAS 7S222
is
m
W
r J; 1-25
-
*
-
1
.6
W——
—65 CtoioO
""
These values apply when the base-emitter diode is open-circuited. mwrc. Derate linearly to 150° C free-air temperature at the rate of 5 mW/°C. Lead temperature Derate linearly to 150°C lead temperature at the rate of 10
gOE° 6Z
C-«*
9R0°r
....
j,,, = „„k measured on the col.ector leed 1/16 ,nch
25°C. Derate linearly to 150°C case-and-lead
USES CHIP N23 ,
4-91
TYPES AST2192, A5T2193 N-P-N SILICON TRANSISTORS electrical characteristics at
25°C
free-air
temperature (unless otherwise noted)
PARAMETER v (BR)CBO v (BR)CEO
Collector-Emitter
v (BR)EBO
Emitter-Base Breakdown Voltage
Collector-Base
Breakdown Voltage
ic= 100 M, mA,
Breakdown Voltage
l
Static
Forward Current
l
5
8
E=
T A =100°C
'E = 0, >
50
E
'E
10
nA
1
MA nA "A
W
=0 -
T A = 100°C
0,
2
50
nA 50
IC= 100 uA lc _ 10 mA
C=
150
lc - 500
mA mA
15
15
75
30
100 See Note 5
35
40
300
= 10V,
IC =
15
15
-
IC" 150 mA IC = 150 mA, See Note 5 lc - 1 50 mA, See Note 5
70
30
MHz
2.5
1
V,
Base-Emitter Voltage
lB= 15 mA,
Collector-Emitter Saturation Voltage
lB= 15 mA,
1
A
120
20
V CE Vg E
Small-Signal
c-o
V V V
80
V CE
v CE(sat) Pfel
60 40
See Note 5
0,
A5T2193 UNIT MIN MAX
ic-o
Vce Vce = 10 V, V C E = 10V, V CE = 10V.
Transfer Ratio
-0 "
c-o
VEB-3V, V EB - 5 V, = 10V,
h FE
E
IB
E = 100 uA,
V C B = 30V, V CB = 30V, V CB - 60 V, V C B - 60 V.
Emitter Cutoff Current
'EBO
l
IC - 25
Collector Cutoff Current
'CBO
A5T2192 MIN MAX
TEST CONDITIONS
1.3
1.3
V
0.25
0.25
V
20
pF
Common-Emitter
Vce
Forward Current Transfer Ratio
= 10 V,
IC -
50 mA,
f
- 20
0.
f
=
2.5
Common-Base Open-Circuit
V CB -10V,
Output Capacitance
l
E =
1
MHz
20
switching characteristics at 25° C free-air temperature
PARAMETER Time
t,.
Rise
tg
Storage Time Fall
tf
NOTE
5:
A5T2192 MIN MAX
TEST CONDITIONS
See Figure
1
Time
These parameters must be measured using pulse techniques.
t„,
- 300
us,
AST2193
MAX UNIT
MIN
70
70
ns
150
150
ns
50
50
ns
< 2%.
duty cycle
PARAMETER MEASUREMENT INFORMATION V 'N
90%
INPUT
—Hri°* A
10%
~Z OUTPUT JT
INPUT
90% -!->)=_
i!
O
OUTPUT
O
4-90%
-i*f-
!
See Notes a and b
-V BB
VOLTAGE WAVEFORMS
^ NOTES:
a.
The input waveform
b.
Waveforms
PRR
4-92
-1 V
TEST CIRCUIT CIRCUIT CONDITIONS A5T2192 A5T2193
is
V| N
7.5
VB B
7.5
V V
15V 15V
supplied by a generator with the following characteristics:
= 5 kHz. are monitored
on an oscilloscope with the following
- 20
< 14
ns,
ns, t f
- 20
ns,
Z out - SO
R in = 10 MJ1 C n '
FIGURE 1-SWITCHING TIMES
1 1
12, t^,
- 10
lit,
5 pF
PRINTED IN U.S.A.
TexasINCORPORATED Instruments POST OFFICE BOX S012
characteristics: t r
tr
.
DALLAS. TEXAS 78233
Tl Of
connot assume any responsibility lor any circuits shown that they are free from patent infrrngi
represent
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIRU.
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Notes 2 and 3) Continuous Device Dissipation at (or below)
2S°C Case Temperature (See Notes 4 and
5)
-65 to 175 -65 to 200 230
Operating Collector Junction Temperature Range Storage Temperature Range Lead Temperature 1 /1 6 Inch from Case for 10 Seconds
NOTESNOTES.
1
1.
I
apply Th.MV.luM v »£- »" Th.M y bMweenO and 800 mA
V.
a
4
Dm.
B.
d"'«
•JEDEC filtered
2N2218A, 2N2220! 2N2221 2N2221 A. 2N2217 2N2218. 2N2218A. 2N2220! 2N2221! 2N2221 A.
publication. applicable reentered data in effect et the time of
Instruments Texas INCORPORATED POST OFFICE BOX S012
.
,._, mW/ ,_
175°C free-air temperature at the rat. of S.33 mW/"C. C free-air temperature « ,h. r.t. |^-33 mVV/ C. to 17B°C c.« t.mp.r.,ur. « th. rat. o 20.0 mW/"C. C. to 176°C ca.a temperetur. at th. ret. of 12.0 mW/
us. duty cycle These parameters must be measured using pulse technique., t,, - 300 th. r.te of To obteln f T the h.l '«•<>"" with frequency is extr.pol.tl «
< 1%. -6dB
per oc«v. from
f- 100 MHz
to the
,
frequency at which ^t»|* 1* registered date
Instruments Texas INCORPORATED post orric* eox 101a
«
dalla*. tcxas 7s*aa
4-9E
TYPES 2N2217 THRU 2N2222. 2N2218A, 2N2219A. 2N2221A. 2N2222A N-P-N SILICON TRANSISTORS 'operating characteristics at 25° C free-air temperature TO-B-*
PARAMETER
TEST CONDITIONS
2N2218A 2N221SA 2N2222A UNIT
TO-18-* 2N2221A
MAX F
Spot Noise Figure
Vce-10V, c l
Rq-
100 mA,
1
kn, f-
MAX
kHz
1
4
dB
'switching characteristics at 25° C free-air temperature
2N2218A 2N2219A 2N2222A UNIT
TO-5-"
PARAMETER
TEST CONDITIONS*
TO-18-> 2N2221A
MAX »d tr
Delay Time Rise
V C c-30V,
Time
TA
Active Region Time Constant*
«!
Storage
«f
Fall
I
C
- 160
Time
l
t Under the given conditions r A
Is
'B(I) "
150 mA,
l
10
28
28
ns
2.8
2.6
ns
226
226
ns
60
60
ns
18mA,
See Figure
V C C-30V, C'B(2) "-18 mA,
Time
Voltage and currant values shown
mA,
V B E(off)--0.5V,
MAX
10
1
B (1)-16mA,
See Figure 2
are nominal; exact values vary slightly with transistor parameters.
equal to
1
— 10
.
•PARAMETER MEASUREMENT INFORMATION +9.9
V
-0.8
V
— INPUT
OUTPUT INPUT
OUTPUT 90%"
TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 1-DELAY AND RISE TIMES
INPUT
1
kn
INPUT O-^rW
OUTPUT 90%
TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 2-STORAGE AND FALL TIMES NOTES:
a.
b.
•JEDEC
The Input waveform, hav. the following ohar.cterl.tlcs: For Figure 1, t, < a ns, v, < 200 ns, duty cycl. < 2%; for Flgur. 2 t f < 5 ns, t ' w » 100ms, duty cycle < 17%. All waveforms are monitored on an oscilloscope with the following characteristics: t < S n. R r ln > 100 kfi, C| n < 12 pF.
'
registered data
PRINTED IN U.S.A.
4-96
Texas INCORPORATED Instruments PO.T OFFICE BOX SOU
.
DALLAS, T.XA. 7.S22
Tl
cannot assume any responsibility
or
represent
that
they
ore
tree
for
from
TEXAS INSTRUMENTS RESERVES THE BIGHT TO IN
any
potent
circuit*
37
ihown
infringement.
MAKE CHANCES AT AN, TIME ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
For Complementary Use with D2T2904, D2T2904A, D2T2905, O2T2905A Dual P-N-P Transistors
•
mechanical data
ALL LEADS INSULATED FROM CASE
HH-1
Dlmantloni without tolaranca datlgnatatrua poiltlon. Laadi hiving maxlmaaiurad In mum dlamatar (0.019") gaging plan* 0.054" +0.001" -0.000" of tha davica plana taating tha balow than ba within 0.007" of thalr trua potltlon ralatlva to a maximum width
m«-
m°
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
maximum
absolute
1
tab.
ratings at
25°C
free-air
1
1
2
COLLECTOR
2
temperature (unless otherwise noted)
D2T2218 D2T2219
D2T2218A UNIT D2T2219A 75
Collector-Base Voltage
40
30
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
800 400 600
Continuous Collector Current Continuous Device Dissipation at (or below) 25 Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25
Each Triode
C
Total Device
Each Triode
C
-65 to 200
Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
1 1
Thaaavalua. Th.^ van,., apply P^V
batwaan
I. Dar.t. Ilnaarly to
and 600
200° C cm.
""C"
300
mA collector currant whan tha baaa-amlttar
„mpar.,ur.
.
W
Total Device
Case Temperature (See Note 3)
NOTESNOTES.
mA mW
!•
opan-clrculted
.,_,,. mW/°C for «ch trlod. and 3.43 mW/°C for tha total davica. mW/°C for «ch trlod. and 1 1 .4 mW/°C for tha ««. davica.
at tha rat. of 2.28
tamparatur. a, tha rata, of 6.7
USES CHIP N24
Instruments TexasINCORPORATED POST OFPICI BOX 5012
25° C free-air temperature (unless otherwise noted)
v (BR)CBO
Collector-Base
V(BR)CEO V(BR)EBO
Collector-Emitter
Breakdown Voltage Breakdown Voltage
Emitter-Base Breakdown Voltage Collector Cutoff Current
ICBO
Emitter Cutoff Current
>EBO
Static
"FE
Forward Current Transfer Ratio
IC=10 M A, IC- 10 mA,
Base-Emitter Voltage
ic-o l
E
VC B
l
E=
" SO V.
VEB-3V, Vce-IOV, Vce-IOV, VCE-10V, vce-iov, VcE" 10 V, V C E - 1 V,
1
Small-Signal
Nel
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit Cobo
Output Capacitance Real Part of Small-Signal
n ie(real)
NOTES:
Common-Emitter Input Impedance
4. 5.
60
60
30
30
TA -150°C
0,
ic-o IC-100mA IC -
1
mA
10mA IC-150mA IC =
IC -
500
mA
50 mA,
V CE
- 20 V,
IC =
IC-20mA,
V CB -10V,
lE-0,
V CE -20V,
lC -
20 mA,
10
nA
10
10
<*A
10
nA
35
25
50
See Note 4
75
100
120
20
300
30
20
50 1.3
1.3
2.6
2.6
0.4
0.4
1.6
1.6
See Note 4
See Note
4
l
20 mA,
V V V
5
20
40
UNIT
10
35
IC-150mA IC- 150 IC - 500
MAX
10
f- 100 MHz See Note 5
f
- 300
1
2.5
MHz
|
< 296. — 6dB
V
V
2.5
250
MHz
f
-
These parameters must be measured using pulse techniques, t^ - 300 /«» duty cycle To obtain t T the |hf e response with frequency is extrapolated at the rata of frequency at which (hfe |™ 1. ,
MAX MIN
5
Ig -
V C E"20V,
Transition Frequency
*T
MIN
-0
mA mA IC" 150 mA C - 500 mA
mA,
lB"50mA,
Collector-Emitter Saturation Voltage
See Note 4
ib-o.
lg- 10pA,
Ig" 15 mA, VcE(sat)
E=
V CB -50V,
In," 15
V BE
l
D2T2219
D2T2218
TEST CONDITIONS
PARAMETER
MHz
250 8
8
pF
60
60
n
per octave from
f
- 100
MHz
to the
switching characteristics at 25° C free-air temperature
TEST CONDITIONS'*' 150 mA. lB(i)-15mA,
PARAMETER t(j
Delay Time
V
Rise
tj
Storage Time
tf
Fall
* Voltage
4-88
Time Time
and current values shown are nominal; exact values vary
slightly
Vcc-30V, lcVbE |off) " _ 0-5 V,
See Figure
lc- 150mA, Vcc-30V, — 'B(2)" 15 mA,
B (D = 15mA, See Figure 2
with transistor parameters.
Instruments Texas INCORPORATED POST OFFICE BOX
SO 12
DALLAS. TBXAS 78882
l
1
TYP 5
UNIT ns
15
ns
190
ns
23
ns
TYPES D2T2218. D2T2218A, D2T2219. D2T2219A DUAL N-P-N SILICON TRANSISTORS D2T2218A, D2T2219A electrical characteristics at 25° C free-air
temperature (unless otherwise noted)
v (BR)CBO
Collector-Base
v (BR)CEO v (BR)EBO
Collector-Emitter
'CBO
Collector Cutoff Current
Breakdown Voltage
C =10mA,
1
E = a - 0,
See Note 4
l
Collector Cutoff Current
Base Cutoff Current
ebo
Emitter Cutoff Current
Static
VCB
- 60 V,
V CB
- 60 V,
Vqe = 60 V, V CE = 60V, V EB -3V, V CE = 10 V, V CE = 10 V, V CE = 10 V, V CE = 10 V, V CE = 10 V, v CE - 1 v. V CE » 10 V,
Forward Current
Transfer Ratio
TA
-
lg "
V BE
l
Breakdown Voltage lc = 10 mA, Emitter-Base Breakdown Voltage E = 10uA, ic = o
!CEV
hFE
I
Base-Emitter Voltage
l
E =
l
E =
V
40
40
6
6
V V
Collector-Emitter Saturation Voltage Small-Signat
Common-Emitter
Input Impedance Small-Signal Forward Current
h fe
Small-Signal
h re
Common-Emitter
hoe
Common-Emitter
Small-Signal
Common-Emitter
Nel
Forward Current Transfer Ratio
*T
Transition Frequency
Common-Base Open-Circuit
c obo
50
mA 150 mA
25
40
IC= IC= 10 mA,
20
50
IC" 150 mA
0.6
lc = 500
"
75
40 See Note 4
120
35
15
Common-Base Open-Circuit Input Capacitance
Real Part of Small-Signal n ie(real)
Common-Emitter Input Impedance Collector-Base
'b'C c
NOTES:
4. 5.
Time Constant
20mA,
V CE =20V,
lc - 20
V CB =10V,
l
mA,
1.2
See Note 4
2
2
0.3
0.3
See Note 4 1
V V
1
3.5
1
2
8
0.25
1.25
300
kJi
0.2
f
-
1
kHz
1
30
150
50
50
300
75
5x1
375
0~ 4
8X10-4 4x1 cn*
2.5x10-* 3
15
5
35
10
100
25
200
jumho
f= 100 MHz See Note 5
3
2.5
MHz
300
250
E - 0,
f
-
1
MHz
8
8
pF
V IC-0,
f
=
1
MHz
25
25
pF
V EB -
0.5
V CE
=
20V, IC=20mA,
f
= 300
V CE
- 20 V,
lc-20mA,
f
=
MHz
60
60
n
31.8MHz
150
150
ps
These parameters must be measured using pulse techniques. t w = 300 ^s, duty cycle To obtain f T the |hf e response with frequency is extrapolated at the rate of frequency at which pif e = 1. ,
0.6
1.2
500
1
- 20 V, IC =
300
100
I
Output Capacitance
c ibo
10
25
B = 50 mA, IC
V CE
10
-20
35
l
1
Output Admittance
10
-20
IC" 10 mA lc= 150 mA
1
Reverse Voltage Transfer Ratio Small-Signal
CA nA nA nA
35
l
Transfer Ratio
nA
10
10
l
n ie
10
10
20
l
v CE(satl
10
C -100»iA c = 1 mA
mA B = 15 mA, IC= 150 mA B = 50mA, lc* 500 mA V CE = 10 V, IC= 1 mA Vc E = 10 V, IC" 10 mA V CE = 10 V, c = mA V CE = 10 V, lc= 10 mA mA Vc E = 10V, lc V C E = 10V, l(j" 10 mA V CE = 10 V, >C' mA Vc E = 10 V, lc= 10 mA l
75
V BE = -3V V BE --3V ic-o l
UNIT
MAX
MIN
75
T A =150°C
0,
-55° C 15 mA,
D2T2219A
D2T2218A MIN MAX
TE
PARAMETER
|
|
Instruments Texas INCORPORATED POST OFFICE BOX 3012
DALLAS. TEXAS 75222
< 2%. — 6 dB
per octave from
f
= 100
MHz
to the
TYPES D2T2218. D2T2218A. D2T2219. D2T2219A DUAL N-P-N SILICON TRANSISTORS operating characteristics at 25° C free-air temperature
PARAMETER
VcE'
Spot Noise Figure
F
D2T2218A D2T2219A
TEST CONDITIONS
Rq-
10V, lc-100(iA,
MAX f-
1 kil.
1
kHz
MAX 4
UNIT dB
switching characteristics at 25° C free-air temperature
t
Delay Time
tr
Rise
ta
Active Region Time Constant?
ts
Storage Time
tf
Fail
T Voltage
Time
Vcc*30V.
Ic= 150 mA,
v BE(off)
v
" -0-5
I
Time
Is
UNIT
MAX
MAX
10
10
ns
25
25
ns
2.5
2.5
ns
225
225
ns
60
60
ns
1
ladi-ISmA, See Figure 2
>
and currant values shown ara nominal, axact values vary
B (1) - 15 mA,
See Figure
.
lc-150mA, Vcc = 30V, = — 1 s mA Ib(2)
+ * Under the given conditions T/^
D2T2218A D2T2219A
TEST CONDITIONS*
PARAMETER
slightly with transistor parameters.
— lr
equal to
PARAMETER MEASUREMENT INFORMATION +9.9 ».» V v
— --
. |
I
0.5
V
INPUT
I
* [
OUTPUT
OUTPUT 90%
TEST CIRCUIT
FIGURE 1 -DELAY
VOLTAGE WAVEFORMS
AND RISE TIMES + 16.2
V—
-13.8
V
I
INPUT
i
INPUT
I
|
kn
O—^W
*-3v 6 TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 2-STORAGE AND FALL TIMES NOTES:
a.
b.
The input waveforms have the following characteristics: For Figure 1, t r < 2 ns, tyy < 200 ns, duty cycle < 2%; for Figure tf < 5 ns, t w « 1 00 MS, duty cycle < 17%. All waveforms are monitored on an oscilloscope with the following characteristics: t r < 5 n«, R,- n > 100 kfi. Cj n < 12 pF.
2,
PRINTED IN U.S.A.
4-100
Tl
Instruments TexasINCORPORATED f»08T OFFICE
BOX
B012
•
DALLAa. TIXAS 75322
g7
cannot assume any responsibility far any circuits shown
or represent
that
they are
tree
from parent infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT P0SSIIU.
,
•
TYPES A5T2222. TIS108,
TiSIIO, TIS111
N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 7311317, MAY 1970-REVISED MARCH 1973
SILECT* TRANSISTORS* DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS featuring
High fj
MHz
350
Low VcE(sat) High
0.13
Maximum
A5T2222
typ at 10 V, 20
V typ at
mA mA
mA
800
Iq
150
Electrically Similar to
2N2222, 2N3116, and 2N4952
TIS109 Processing Includes Operational Aging
TIS110
Electrically Similar to
2N4400
TIS1 1 1
Electrically Similar to
2N4401
at
300
mW for 24 Hours
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
0.013
(Norc a)
f 0.160
x 0.010'
—V
0.500
mm.
—
-|
HAD TEMKRATUIE MEASUREMENT
NOTffc A. Uoddfemrtw n n»t controlled
in this
POINT (1/1* F*OM CASE)
one.
load, having maaiifUHn dtamtfor (0.019) hall
ft*
within 0.00? «f rh»ir trv» position.
™*«"^ '" *• g**"! phMW 0.9M kotow fht Mating plan* of tho dovko f
C.
AU
maximum ratings at 25°C
absolute
rotative) t«
pacing*.
dwnontiont o
free-air
temperature (unless otherwise noted)
A5T2222 Collector-Base Voltage
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
5V
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3) Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1
.
2.
3.
Than valuo apply between
and 10
TIS110 TIS111
TIS109 60 V 30 v
mA collector current when the base-emitter diode
Derate llneerly to 1BO°C free-air temperature at the rate of 5 mW/°c. Derate linearly to 150°C lead temperature at the rata of 10 mW/°c. Lead temperature from the case.
6V
2)
-
.
*
— — —
.
-65°Cto150°C
«
—
..
Is
Is
60V V
40 800 mA 625 mW 1.25
W
»•
—
260°C
open-circuited.
measured on the collector lead 1/16 Inch
trademark
of Texas Instruments tu.S. Patent No. 3.439,230
USES CHIP N24
TexasINCORPORATED Instruments POST OFFICE BOX 5012
.
DALLAS, TEXAS 78133
4-101
TYPES A5T2222. TIS109 N-P-N SILICON TRANSISTORS
electrical characteristics at
25°C
free-air
temperature (unless otherwise noted)
A5T2222
TEST CONDITIONS
PARAMETER Breakdown Voltage
V(br)CBO
Collector-Base
V(fjR)CEO
Collector-Emitter
V(BR)EBO
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
Static
"FE
Breakdown Voltage
See Note 4
l
100
V CE
=
V CE VCE
= 10 V, lc=
10
Base-Emitter Voltage
mA
IC'IO" *
= 10V.
1
V CE = 10V, lc* 150 mA V CE = 10V, Iq = 500 mA
Collector-Emitter Saturation Voltage Small-Signal
Ihfe
Common-Emitter
IC =
20mA,
Vce
=
Transition Frequency
Vce
" 10 V, lc - 20 mA,
Common-Base Open-Circuit
Vcb-1° v 'E-0.
Forwerd Current Transfer Ratio
Cobo
40 300
100
35
50 See Note 4
400
20
30 1.3
1.3
2.6
2.6
0.4
0.4
10V.
.
See Note 4
1.6
1.6
f
- 100
MHz
See Note 5 f
-
1
MHz
f
=
1
MHz
2.5
2.5
250
250
MHz
Output Capacitance
Common-Base Open-Circuit
m»
Veb
= "- 5V
Vce
- 10 V, lc =
-
'C
= °.
25
25
60
60
pF
Input Capacitance Real Part of Small-Signal
Re(h ie )
5.
30
75 100 See Note 4
V C e = 1V. 'C = 150 mA B -15mA, Iq = 150 mA B = 50mA, Iq = 500 mA B = 15mA. Ic= 150 mA lB = 50mA, Ip" 500 mA l
4.
50
l
VcE(sat)
NOTES:
35
10V, lc=100cA 1
nA
MA
T A - 100°C
l
VB E
UNIT
60
c =10uA, Ie'O c = 10mA, Ib = 0, lc'0 E = 10>A, V CB = 20V, Ie=0 V CB = 50V. lE'O V CB = 50V, lE = 0. V EB = 3V, C -0 l
l
Forward Current Transfer Ratio
TIS109
MIN MAX MIN MAX
Common-Emitter Input Impedance
20mA,
f- 300 MHz
duty cycle < 2%. These parameters must be measured using pulse techniques, t,, 300 ms. the rate of -6 dB per octave from To obtain f , the |h, response with frequency is extrapolated at
T
f
- 100
MHz
to the
el
frequency at which
|hf e |
*
1
switching characteristics at 25° C free-air temperature
PARAMETER V CC
tj
Time Storage Time
V B E( ff) " -0- 5 v Vce " 30 v
tf
Fall
tr
The
TEST CONDITIONS C = 150 mA,
Delay Time
t,j
t Voltage
= 30V,
Rise
>
Time
l
B (2)
and current values shown are nominal; exact values vary
referenced figure, are
I
=
l
B(1 ) =
15mA,
See Figure 1*
-
lc= 150 mA,
— 15 mA,
slightly
UNIT
TYP
1,
l
B (i) = 15mA,
190
23
See Figure 2*
with transistor parameters.
shown under Parameter Measurement Information
for types
2N2217 through 2N2222
or
TI81M. page
4-96.
PRINTED IN
4-102
Instruments Texas INCORPORATED POST OFFICE BOX 5012
»
DALLAS. TEXAS 75222
U.S.A.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME ORDER TO IMPROVE DESIGN AND TO SUPPtr THE IEST NODUCT POSSIBLE.
IN
TYPE Q2T2222
QUAD
N-P-N SILICON TRANSISTOR
BULLETIN NO. DL-S 7311703, APRIL 1972-REVISED MARCH 1873
DESIGNED FOR MEDIUM-POWER SWITCHING
AND GENERAL PURPOSE AMPLIFIER APPLICATIONS I
High Breakdown Voltage Combined with Very-Low Saturation Voltage
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1
.
2.
mA
....
0.8
A
0.5
wt
1
.5
wt
-55°Cto 150°C 260°C
mA
This value applies between 0.01 and 500 collector current when the emitter-base diode is open-circuited. Derate linearly to 160°C free-elr temperature et the retes of 4 mw/'c for eech trlode end 1 2 mW/°C for the total device.
Previous editions of this dete sheet showed higher power dissipation ratings which have been found to be errors end do not represent product changes.
TexasINCORPORATED Instruments «»T OFPICI
BOX 1012
•
DALLAS. TBXAS 7S223
In error.
The new
ratings correct these
USES CHIP N24
4-103
TYPE Q2T2222 QUAD N-P-N SILICON TRANSISTOR electrical characteristics at
25° C free-air temperature (unless otherwise noted)
v (BR)CBO
Collector-Ban Breakdown Voltage
V(BR)CEO v (BR)EBO
Collector-Emitter
'ebo
Emitter Cutoff Current
Static
hFE
Base-Emitter Voltage l
l
Collector-Emitter Saturation Voltage
VcE(sat)
l
Small-Signal
II
Common-Emitter
Forward Current Transfer Ratio
fr
Transition Frequency
cobo c ibo
Common-Base Open-Circuit Output Capacitance
ic-o IC -
1
mA
MA
10
nA
50
mA mA IC- 150 mA Iq- 160 mA IC " 500 mA C - 150 mA IC - 500 mA
100
IC- 150
B - 15 mA, B - 50 mA,
nA
3
75
IC-10mA See Note 3
300
30
500
IC
10
35
IC-100*iA
50 1.3
V
See Note 3
2.6 0.4
I
See Note 3 1.6
- 10 V,
IC - 20
mA,
f- 100 MHz
V C E-10V, V C B - 10 V, Veb 0-5 V
IC - 20
mA,
See Note 4
Vce-IOV,
IC -
Real Part of Small-Signal
Re(h ie )
T A - 100°C
lE-0,
*=
Common-Base Open-Circuit Input Capacitance
5
l
B - 50 mA,
V CE
K\
30
ic-o E -0
l
VBE
V V V
60 See Note 3
ib-o.
V C B - 50 V, Vcb-SOV, V EB -3V, V C £ - 10 V, VCE-10V, VCE-10V, V C E-10V, Vce-IOV, V C E - 1 V, B -15mA,
Forward Current Transfer Ratio
E -0
l
IC- 10 mA, lg- 10>A,
Emitter-Base Breakdown Voltage Collector Cutoff Current
c -10mA,
I
Breakdown Voltage
'CBO
MIN MAX UNIT
TEST CONDITIONS
PARAMETER
lE-0, ic-o, 20 mA,
2.5
-
1
f
-
1
f
- 300
MHz
250
MHz MHz
f
V
MHz
8
pF
25
pF
60
ft
Common-Emitter Input Impedance 2%. These parameters must be measured using pulse techniques. tw - 300 Ms, duty cycle < per octave from To obtain fT the |h fJ response with frequency Is extrapolated at the rate of -6 dB
3.
4.
100 MHz to the
f
,
frequency at which
|hf e |- 1.
switching characteristics at 25°C free-air temperature
PARAMETER to-
Rise
* Voltage
V C C-30V,
Delay Time
V BE
Time
t8
Storage
tf
Fall
(
ff)
I
Time
l
See Figure
- -0.5 V,
slightly
190
30
See Figure 2
B(2)" -15rnA -
and current values shown are nominal; exact values very
12
1
IC- 150mA, lB(i)-15mA,
V CC -30V,
Time
UNIT
TYP
TEST CONDITIONS* C - 150mA, led)- 15mA,
with transistor parameters.
PARAMETER MEASUREMENT INFORMATION »I6.2V---13.8V
1
_J
L.
kfl
INPUT 0—"»W-
OUTPUT
>-3V» TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 2-STORAGE AND FALL TIMES
FIGURE 1-DELAY AND RISE TIMES NOTES:
a.
b.
The Input waveforms have the following tf < 6 ns, t w « 1 00 MS, duty cycle < 1 7%. All
waveforms
are
VOLTAGE WAVEFORMS
TEST CIRCUIT
characteristics: for figure 1, t,
<
2 ns.
monitored on an oscilloscope with the following characteristics:
t»»
tr
<
< 200 6
ns,
ns,
duty cycle
R ln > 100
kft,
<
2%; for figure
2,
C ln < 12 pF. PRINTED IN U.S.A.
3'
connot otsume ony responsibility fw ony circuits shown or represent that they ore free from potent infringement.
TWO TRANSISTORS IN ONE PACKAGE FOR DIFFERENTIAL AMPLIFIER APPLICATIONS •
Medium Power
•
High Operating Voltage
'mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerenee designete true petition. Leeds having maximum dlamatar (0.019") meesured In gaging plana 0.064" +0.001" -0.000" balow tha Mating plana of tha davlca •hall ba within 0.007" of thalr trua poiltlon ralatlva to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
T Applicable to
'absolute
2N2223 and 2N2223A
maximum
2
COLLECTOR
minimum dlmantlon
only. Raglitarad
1
1
for
2
2N2060
It
0.140.
ratings at 25° C free-air temperature (unless otherwise noted)
2N2223 2N2223A
2N2060
EACH
TOTAL
EACH
TOTAL
UNIT
TRIODE DEVICE TRIODE DEVICE Collector-Base Voltage
100
100
V
Collector-Emitter Voltage (See Note 1)
80
80
Collector-Emitter Voltage (See Note 2)
60
60
V V V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 3) Continuous Device Dissipation at (or below) 25" C Case Temperature (See Notes 4 and 5) Continuous Device Dissipation at 100" C Case Temperature Operating Collector Junction Temperature
3. 4. 6.
mA
0.5
0.6
0.5
0.6
1.5
3
1.6
3
0.86
1.7
0.91
1.7
W W W U
200
C
-65°C to 200"C 300"C
Lead Temperature 1/16 Inch from Case for 10 Seconds
1.
7
500
200
Storage Temperature Range
2.
7
500
That* values apply whan tha bate-emltter resistance (RnE> It equal to or last than 10 ohm t. These valuet apply whan tha bete-emltter dloda It opan-clreultad. Derate linearly to 200° C free-air temperature at the rata of 2.86 mw7°C for each trlode and 3.43 mW7°C for total davlca. Derate 2N2060 llneerly to 200°C case temperature et the rata of 8.6 mW/°C for each trloda and 17.2 mW/°C for total device. Derate 2N2223 and 2N2223A llneerly to 200°C ease temperature at tha rata of 9.1 mW/°C for each trloda and 17.2 mW/'c for total davlca.
6. 7.
8. 9.
Tha terminals of tha trlode not under tett are open-circuited for the measurement of these characteristic!. This parameter must be measured uting pulte techniques tyy - 300 lit, duty cycle < 1 96. The lowar of the two h FE reeding Is taken es h FE1 This parameter la measured In en amplifier with response down 3 dB at 25 Hi and 10 kHz and a high-frequency .
rolloff of
6
dB/octave.
JEOEC
registered data. Thlt data sheet contains
all
applicable raglitarad data In effect at tha time of publication.
Texas INCORPORATED Instruments POST OFPICI BOX B012
See Note mA, B = 0, c SeeNoteT c - 100 mA, Rbe'^O"= 100cA, lc°0 E V CB -80V. lE-0 T A =150°C V CB -80V. l£-0. l
Collector-Emitter
2N2O60
TEST CONDITIONS
PARAMETER
20
30
20
30
Input Impedance Small-Signal
hrb
Common-Base
VcB
Reverse Voltage Transfer Ratio Small-Signal
h b
lc=1mA,
5V,
=
=
f
3x
1kHz
10-*
Common-Base
0.5
Output Admittance Small-Signal Common-Emitter
Mmho
1000 4000
Input Impedance Small-Signal hfe
Common-Emitter
Vce =
Forward Current Transfer Ratio Small-Signal Common-Emitter
Forward Current Transfer Ratio
I
Common-Base Open-Circuit
cobo
v
'C
>
=
1
mA
-
'
"
50
kHz
1
150
40
200
pmho
Output Admittance Small-Signal Common-Emitter
he
5
c -50mA,
MHz
2.5
f
- 20
'E-0.
f
-
1
MHz
15
V E b-0.5V, C = 0,
f
=
1
MHz
85
V C £=10V,
l
VcB='<> v
.
Output Capacitance
Common-Base Open-Circuit Cibo
l
85
Input Capacitance
triode matching characteristics
TEST CONDITIONS
PARAMETER Static
hFE2
Gain Balance Ratio
~ v BE2l
|VBE1
I
Base-Emitter-Voltage-Differential
V CE
Temperature Gradient
From T A -
operating characteristics at 25° C
free-air
C = 100(>A, See Note 8
0.9
S" Note 8
0.9
lc *
-
Base-Emitter-Voltage Differential
A(V B E1 - VBE2I
AT A
Vce-SV, V CE" 5V VcE"5V, VCE'BV,
Forward Current
"FE1
EJEMZZSimVEISil^^m
1
i"*.
15
Ic=100mA Ic-'ihA" c -100uA, -55°CtoT A - 126°C
" 5 V,
UNIT
0.9
l
10
25
MV/°C
temperature
individual triode characteristics (see note 6)
TEST CONDITIONS
PARAMETER
•JEDEC
Spot Noise Figure
V CE
Average Noise Figure
Vpf
- 10 V. lc - 300 MA, - 10 V, lc * 300 cA,
Rg - 510 n. f - 1 kHz Rg ' 1 Mi. Noi8e Bandwidth -
15.7 kHz. See Note 9
registered data
PRIMED
4-106
Instruments Texas INCORPORATED POST OFFICE SOX 5012
DALLAS. TEXAS 76222
IN U.S.*.
AT AHY TIM TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHAN6ES THE BEST PHOOOCT MKSIIU IN ORDER TO IMPROVE DESIGN ANO TO SUPPLY
|
TYPES 2M2192. 2N2132A, 2N2183, 2N21S3A, 2N2194. 2N2194A, 2N2243, 2N2243A N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 733671. MARCH 1963-REVISED MARCH 1973
FOR MEDIUM-POWER SWITCHING
AND AMPLIFIER APPLICATIONS •
High Breakdown Voltage Combined with Very Low Saturation Voltage
•
hpE-Guaranteed from 100 /ia to
1
amp
mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
»unuss omomnsE
O.rflmmti
\m
J—
OF OUTLINE IN —L-a mw I
npThneaa.*
r
ALL JEOEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at 25° C free-air temperature (unless otherwise noted)
2N2192 2N2193 2N2194 2N2243 2N2192A 2N2193A 2N2194A 2N2243A UNIT Collector-Base Voltage
60* 40*
80* 50*
60* 40*
5*
8*
1*
1*
0.8*
Total Device Dissipation at (or below)
25° C Case Temperature (See Note 3) Storage Temperature Range
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Collector Current
Total Device Dissipation at (or below)
25°C Free-Air Temperature (See Note
V
5*
120* 80* 7*
1*
1*
a
0.8*
0.8*
0.8*
w
iot
10t
10t
10t
2.8*
2.8*
2.8*
2.8*
2)
-65°C
1
.
2. 3.
•JEDEC
outline for these devices
is
(JEDEC
registered)
TO-5. TO-39
falls within TO-5 with the exception of lead length. applicable registered data in effect et the time of publication. guaranteed by Texas Instruments In addition to the JEDEC registered value which is also shown. is
registered data. This data sheet contains
'This value
w
to
This value applies when the base-emitter diode Is open-circuited. Derate linearly to 200°C free-air temperature at the rate of 4.57 mw/°C. Derate the 10-watt rating linearly to 200°C case temperature at the rate of 57.1 mw/°C. Derate the 2.8 watt rating linearly to 200°C case temperature at the rate of 16 mw/°C.
The JEDEC registered
V
200°C* 300°C*
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
V
all
USES CHIP N23
TexasINCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS, TEXAS 7S222
4-107
:
TYPES 2N2243, 2N2243A N-P-N SILICON TRANSISTORS
Electrical characteristics at
M°C
free-air temperature (unless otherwise noted)
2N2243A
2N2243
CONDITIONS
TEST
PARAMETER
= 100/xo, c = 25 mo, E = 100pa, ¥ C i = *0v, V« = 60v. Vb = 5», Vc6 = 10», V a = l0», Vce = 10 ».
Breakdown Voltage
c
|
= See Mote 4 = 0, = c U= TA = 150'C = 0. Ic = c = 100fia
U
V,imcbo
Collector-Base
Vikiceo
Collector-Emitter Breokdown Voltoge
l
li
V(»«bo
Emitter-Bose Breokdown Voltage
l
l
Iceo
Collector Cutoff Current
Emitter Cutoff Current
Inc-
Static
ite
Forward Current Transfer Ratio
V CE
=10v,
I,
Collector-Emitter Saturation Voltage
M
Small-Signal Common-Emitter
=
10v,
10
10
15
15
50 15
15
lc
= 150ma = 150ma
lc
=
50ma,
1
= 20 mc
f
=
20
120
40
VC i=10v,
Output Capacitance
* switching
characteristics at
M°C
free-air
l
E
= 0.
120
15
15
U
U
0.J5
0.25
2.5
2.5
15
lmc
2N2243 2N2243A
See Figure
Stored-Charge Time Constant
»b
4-.
•Mcatn
Il»»
rmmlm
JEDEC »0<
mwl
b« iM««rrt uilng |»I» urtniiiMs.
fW
=
15
temperature
TEST CONDITIONS
PARAMETER
4-108
40
Forward Current Transfer Ratio
Common-Base Open-Circuit
NOTE
MAX
30
lc = 10 ma, T* = - 55°C c = 150ma, SeeHote4 c = 500 ma. See Note 4 lc = 'JOma, See Note 4
c
MIN
300 iok, Duty CytU
m.
Me
Instruments Texas INCORPORATED POST OFFICE VOX 9012
•
DALLAS, TEXAS 7S2M
UNIT
MAX 2.1
1
UNIT
120
=10ma
c
l
I,
Vce
l
|
Vce = v, = 15 ma, = 15 ma, 1
Vomi
l
MAX
120
e
I
|
Vcg^lOv,
Base-Emitter Voltage
MIN
JUMC
pa
TYPES 2N2243, 2N2243A N-P-N SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION
Waveforms ara monltorad on an oscilloscope with tha following The relay Is Clare HG 1005 (or equiveient).
JEDEC
PRINTED IN
I
— TV
characteristics: t r
<
14 nsec, R, n - 10 M(! Ci n -
1 1
S oF
raglttarad data.
USA
Tl
cannot Atiumc ony roipMisibilily for any circuits shewn
Of
npmtnl
(hoi
(Key ore
froe
from polmt inhinftnwnt.
TEXAS IHSTMiMENTS RESERVES THE RIGHT TO MAKE tNAHCES AT ANT TIME IN 0M£R TO IMPROVE DESIGN AND TO StlrW THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX M12
•
DALLAS. TEXAS 75222
4-109
TYPE A5T2243 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 7311978. MARCH 1973
SILECT t TRANSISTOR* FOR MEDIUM-POWER SWITCHING AND AMPLIFIER APPLICATIONS
•
V(BR)CBO- -120 V hFE Guaranteed from 100 mA to 500 mA 50 MHz Min fT
•
Electrically Similar to
• •
High
•
•
•
2N2243A
mechanical data This transistor
is
encapsulated
in a plastic
compound
specifically designed for this purpose, using a highly
mechanized
withstand soldering temperatures without deformation. This conditions and is capable of meeting MIL-STD-202C, high-humidity under characteristics device exhibits stable Method 106B. The transistor is insensitive to light. process developed
by Texas Instruments. The case
will
EMITT
*
»0T.r—
1_
H
t
0.160 0.005
A. Lead diameter is not controlled in this area. measured B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions relative to a maximumin the gafllng plane 0.054 below the seating plane of the device diameter package. C. All
absolute
maximum
dimensions are
in inches.
ratings at 25° C free-air temperature (unless otherwise noted)
120V
Collector-Base Voltage
80
Collector-Emitter Voltage (See Note 1)
7
Emitter-Base Voltage
1
Continuous Collector Current
Continuous Device Dissipation at
(or
mW 1.25 W 1.6 W
625
below) 25°C Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3) Continuous Device Dissipation at (or below) 25°C Case-and-Lead Temperature (See Note 4)
-65°Cto 150°C 260 C
Storage Temperature Range
Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1.
This value applies
2. Derate linearly to Derate linearly to
from the
when the base-emitter diode Is open-circuited. 150° C free-air temperature at the rate of 5 mW/°C. 150°C lead temperature ot the rate of 10 mW/°C. Lead temperature
is
measured on the collector lead 1/16 inch
case.
4. This reting applies with the entire case (including the leeds) temperature at the rate of 12.8 mW/*C.
maintained at 25 C. Derate linearly to 150
^Trademark of Texas Instruments *U.S. Patent No. 3,439,238
4-110
v V A
C
case-and-lead
USES CHIP N23
Instruments Texas INCORPORATED POST OFFICE BOX SOIZ
DALLAS. TEXAS 7S222
TYPE A5T2243 N-P-N SILICON TRANSISTOR electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER Collector-Emitter Breakdown Voltage
v (8R)EBO
Emitter-Base Breakdown Voltage
Breakdown Voltage
Collector Cutoff Current
'EBO
Emitter Cutoff Current
Kl
E = 100 mA,
ic-o
l
Vce = 10 V, V CE -10V, v C e -lov, v C e -lov. v C e - 1 v. lB-15mA, lB = 1SmA,
Base-Emitter Voltage Collector-Emitter Saturation Voltage Small-Signal
IB - 0,
i
E
E
-0
'E
= 0.
l
MAX UNIT
MIN
-o
ic= 100 uA, IC - 25 mA,
V CB - 60 V, V C B - 60 V, V E B - 5 V,
Forward Currant Transfer Ratio
Static
VBE v CE(sat>
V V
120 See Note 5
80
V
7
10
TA
- 100°C
ic-o ic- 100 uA
1
«A
50
nA
15
IC= 150
mA mA
40
IC- 500mA
15
lc= 150 mA " 150 mA, See Note 5 lc= 150 mA, See Note 5
30
lc= 10
nA
30 120
Ic
1.3
V
0.25
V
15
pF
Common-Emitter
V CE
Forward Current Transfer Ratio
= 10 V,
IC =
50mA,
f- 20 MHz
0,
f
2.5
Common-Base Open-Circuit
c obo 5:
Collector-Bate
>CBO
"FE
NOTE
TEST CONDITIONS
v (BR)CBO v (BR)CEO
Vcb-IOV,
Output Capacitance
These parameters must be measured using pulse techniques. t„ - 300
u«,
Ig
duty cycle
-
-
1
MHz
D
< 2%.
switching characteristics at 25° C free-air temperature
TYPE 2N2270 N-P-N SILICON TRANSISTOR BULLETIN NO. OL-S 7311947, MARCH 1973
FOR MEDIUM-POWER, GENERAL PURPOSE APPLICATIONS •mechanical data
THE COLLECTOR
18 IN
ELECTRICAL CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
maximum
absolute
ratings at 25° C case temperature (unless otherwise noted)
60V * 45V 60V # i 7 v # 1 A < W* 1
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1) Collector-Emitter Voltage (see Note 2)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature
(see
Note 3)
fiowf Continuous
Device Dissipation at (or
below) 25°C Case Temperature (see Note 4)
1 -65°C
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds •electrical characteristics at
25°C case temperature
Collector-Emitter
Breakdown Voltage
V(BR)CER V(BR)EBO
Collector-Emitter
Breakdown Voltage
TEST CONDITIONS See Note 5 c = 100 mA, ib-o. \q - 100 mA, r be - 10 n. See Note 5 E = 0.1 mA, ic-o V CB = 60V. E -0 T C =150°C V CB - 60 V, lE-0, l
Emitter-Base Breakdown Voltage
l
Collector Cutoff Current
>EBO
Emitter Cutoff Current
hFE
Static
Vbe v CE(sat)
Base-Emitter Voltage
B " 15 mA, lg » 15 mA, l
Collector-Emitter Saturation Voltage
Common-Emitter
V CE
Forward Current Transfer Ratio Small-Signal
Ihfel
ic =
- 6 V,
V CE = 10V, V C E-10V,
Forward Current Transfer Ratio
Small-Signal hfe
V EB
Common-Emitter
=
Vce*
Forward Current Transfer Ratio
10V.
UNIT V
60
V
7
50
10
v
.
c -= 1 mA c = 150 mA, See Note 5 IC- 150 mA, See Note 5 IC- 150 mA, See Note 5
l
30
l
50
mA,
IC= 50 mA, lc " 50
mA,
kHz
f
-
1
f
=
20
MHz
5
100
Transition Frequency
Vce-'OV.
c obo
Common-Base Open-Circuit Output Capacitance
V(5 B
=10V,
lE-0,
f
»
1
c ibo
Common-Base Open-Circuit Input Capacitance
V EB
= 0.5V,
ic = o.
f
-
1
MHz MHz
6. 6.
1.2
V
0.9
V
275
MHz 15
pF
80
pF
.
,
which
|hf e
|-
1.
registered value. This dete sheet contains
all
tThese values are guaranteed by Texas Instruments
4-112
200
when the base-emitter diode is open-circuited. when the base-emitter resistance R BE < 10 O. 20O C free-air temperature «t the rate of 5.71 mwrc. ,.„_„ . ,, mW/°C. Derate the 5-wett (JEDEC registered) Derate the 10-watt rating llneerly to 200°C case temperature et the r.te of 67.1 mW/°C of 2S.B rate the temperature at rating llneerly to 200°C case These perameters must be measured using pulse techniques. t„, - 300 Ms, duty cycle < 2%. octave from f - 20 MHz to the frequency To obtein f T the fa.| response with frequency Is extrepoleted at the rate of -6 dB per et
•JEDEC
V nA "A nA
This value applies
2. This value applies 3. Derete linearly to 4.
50
See Note 6
fT
1
50
100
°
lc = 5
MAX
45
MIN
l
ICBO
W*
(unless otherwise noted)
PARAMETER v (BRICEO
5
200 C* /300°Ct 1255°C*
to
applicable registered date In effect et the time of publication. JEDEC registered velues which are elso shown.
In edditlon to the
Instruments Texas INCORPORATED POST OFFICE BOX Mia
•
DALLAS, TEXAS 7S222
USES CHIP N23
TYPE 2N2270 N-P-N SILICON TRANSISTOR •thermal characteristics
PARAMETER
MAX UNIT
Junctlon-to-Can Thermal Resistance
RgJC R SJA
35
Junction-to-Free-Air Thtrmal Resistance
"c/w
17B
•operating characteristics at 25° C case temperature
PARAMETER F
TEST CONDITIONS c - 0.3 mA, R G
VcE
Spot Noise Figure
f
-
1
'0 V,
l
MIN -
1
MAX
UNIT
kn, 10
kHz
dB
•switching characteristics at 25° C case temperature
PARAMETER tj
Total Switching
TEST CONDITIONS
Time
See Figure
MIN
MAX UNIT
1
30
ns
PARAMETER MEASUREMENT INFORMATION -50 V
O
'
+20 V
40n -O OUTPUT
nF DISC
0.01
INPUT O
f
((—
Jioon
sioon i
kn
5W
—VW
•
_L
O -50 V
1N3064
WAVEFORM AT POINT A
+20 V --
OUTPUT
WAVEFORM + 18
V 'off-
'
'on + 'off
FIGURE 1 -SWITCHING TIME MEASUREMENT CIRCUIT
NOTES:
The Input waveform w = 15 ns, Z out = 50
7.
t
8.
'JEDEC
3
Waveforms
are
is supplied by a mercury relay pulse generator with the following characteristics: t <£ 1 r SI. Adjust R1 and the input pulse amplitude to obtein the specified voltage levels at Point A. monitored on a sampling oscilloscope (t r < 0.4 ns) using a 2-kJi probe.
<
1
ns,
registered deta
PRINTED IN U.S.A. Tl
cannot assume any responsibililv for any circuits shown
or
represent
that
they ore
free
tram
potent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ns, tf
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TexasINCORPORATED Instruments POST OFFICE BOX SOI 2
DALLAS. TEXAS 7B222
4-113
P
TYPE 2N2303 P-N-P SILICON TRANSISTOR BULLETIN NO. DL-S 669766, DECEMBER 1966
DESIGNED FOR AUDIO
* mechanical
AND GENERAL PURPOSE AMPLIFIER APPLICATIONS
data
0.100-H
(—
0.240
I
H2S CMS DIA I
THE COllECTOl
"I 0.M5 „ » £§55 g
-i— i
0.100
IS IK
ELECTIICAl
CONTACT WITH THE CASE All JEDEC 10-5 DIMENSIONS
MIN ~"
1
*~
DETAILS Of OUTUNf IN—I— THIS ZONE Of TIONAL
AMI NOTES AIE A'rLICAHE.
0.0OR
DIMENSIONS ARE
i
IN INCHES UNLESS OTHERWISE
SKCWED
'absolute
ratings at 23*C free-air temperature (unless otherwise noted)
maximum
_5° V -5° V -35 V
Collector-Base Voltage
Note Collector-Emitter Voltage (See Note Collector-Emitter Voltage (See
FOR EXTREMELY LOW-LEVEL, LOW-NOISE, HIGH-GAIN, AMPLIFIER APPLICATIONS Formerly TI420 and TI421
Guaranteed h K at 10 ^a, TA =-55°C and Guaranteed Low-Noite Characteristics at 10 Usable at Collector Currents as Electrically Similar to
Low as 1 2N929 and 2N930
+ 25°C <*a
*xa
Compatible Package for Interfacing with Integrated Circuits and Thin-Film Modules
mechanical data The
transistors
are
in
a
hermetically sealed
welded package meeting the JEDEC TO-50
outline.
D —
'CASE OUTLINE
* absolute
maximum
— < ]
f
\H-J^
«U
LEADS
MSUMTED
FIOM USE
ratings at 25'C free-air temperature (unlets otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage (See
Note
1)
Emitter-Base Voltage Collector Current
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Operating Collector Junction Temperature
Storage Temperature Range
lead Temperature
NOTES:
valw
whin
K
h
Case for 10 Seconds
1.
Thli
Dirali linearly la I7S*C fnt-alr iMitntiira it lha rata at 2
3.
Derate linearly lo I75*C
* Indiialei
JEDEC
Hit btM-tmitttf dlada
in
ttmparatwi al
H»
.
.
.
1
w
175°C
-o5°C
Inch from
2.
applies
.
45 v 45 v 5v 30 ma 300 mw
to -t-200*C
230*C
apa>-
rata af
nw/C*.
<.M hm/C*.
rejlilered data.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75223
4-117
TYPES 2N2387. 2N2388 N-P-N SILICON TRANSISTORS
'electrical characteristics at
25°C free-air temperature (unless otherwise noted) 2N2387 TEST CONDITIONS
FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS
FROM <0.1 ma
>150 ma, dc
to
to 30
Mc
formerly TI424 and TI425
• •
2N1613 and 2N1711
Electrically Similar to
Compatible Package for Interfacing with Integrated Circuits and Thm-Film Modules
mechanical data The
transistors
are
in
a hermetically sealed welded package meeting the JEDEC TO-50
ALL LEADS INSULATED
CASE OUTLINE
maximum
'absolute
FtOM USE
25°C
ratings at
free-air
temperature (unless otherwise noted) 75 v 50 v
Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Collector Current Continuous Device Dissipation at (or below)
7v
25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Operating Collector Junction Temperature Storage Temperature Range Lead Temperature X» Inch from Case For 10 Seconds "electrical characteristics at
25*C
free-air
Vtltc*>
'iSMCIO v(Mcet (MlKtw-Einlmr Dnatdtm
'iMISO
Eailttar-tan
Valtaft
liaaMoim Vrilaft
c= c=
= H =l0O, ShIMi4 =100 W C = »«=«'. = A= »C1=»». = c=« »M = »cs = »'. c = IM Vci = c = ho i* Sm KMf va = c= »a = "«. c = 10ma, A = -5S*C, SMlMt4 SmNoIi4 »« = c= SMlMt4 ct = c= l,= c = 1»hm, l,= c = l»on, SmIWi4 l
l
l
100/io,
l
B
>ESO
MtKtor
Cataff Carnal
«
l
e
Comal
St
Fonwa' Comal
»
* "ctjufl NOTES.
1. Tali
2.
llooorlr to
Votta*
Colloctor-EoilHtr Satoratlta Voltaoi
¥•!• otplln w»«i Mm b
Dmto
*Mlcat« JEDEC
on-Emlmr
200*C
m
frtc-«ir
omltUt
mktoKO
Iwowaloro
at
t
tttt
K
<
10
10.,
r
io».
l
to
w
+200°C 230°C
*
7
V
T
na
75
35
20
Sot Holt 4
200*C
u»
300
100
40 1.3
o.<
1.5
Dtnto llnMrir
4.
ThtH oaranwton must bo mtanrai *%• *>>1 tf*
^
120
0.4
3.
to
15
20
40
raolittnd oolo.
5
IS
500im,
mw/C*.
A"
M
4
1S0cm,
l
aa
10
n
l
I
10
10 10
I
15«a,
T
10
10
10 on,
UNIT
7
10,,
IS an,
2N2390 MIN MAX 50
'•».
Q.
rata of 2.57
-65°C
SO
1S0*C
T
0,
l
Tnarfor Ratio
1.5
200°C
75
J«.
l
Static
.
75
6
l,
Enllttr CataH
»
100 mo, «
l
'cso
2N2389 MIN MAX
TEST CONDITIONS
InaMm
.
.
.
500 ma 450 mw
temperature (unless otherwise noted)
PARAMETER MltctacloM
outline.
tooiaaratora «t usiitg
Hw rah
of 0.57
pulsi Uchoiaoti.
1.3
V
1.5
V
«w/C*.
rW
=
300 jute,
373
Instruments TexasINCORPORATED POST OFFICE BOX 5012
Compatible Package For Interfacing with Integrated Circuits and Thin-Film Modules
mechanical data These transistors are
in
a hermetically sealed welded package meeting the JEDEC TO-50
outline.
AIL LEADS INSULATED >
'absolute
CASE OUTLINE
maximum
FION CASE
ratings at
25°C
free-air
temperature (unless otherwise noted) *° v
Collector-Base Voltage
Note
Collector-Emitter Voltage (See
40 »
1)
5v
Emitter-Base Voltage
300 ma
Collector Current
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at {or below) 25°C Case Temperature (See Note 3)
Lead Temperature Ki Inch from Case for 10 Seconds
Hlhn
applies irhtn bose-wniltM
Is
epen-tiiaM.
free-air tomperatvre at Hie rati tf 2.5/
200°C
3. Derate linearly to
200°C case temperatvro
.
.
450 mw 1.5
—65°C to +200
Storage Temperature Range
2. Diratl linearly to
.
at tit rata of S-57
mw/C°
nw/C°.
* Indicates JEDEC registered data.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
w
200 C
Operating Collector Junction Temperature
DOTES-. T. This
.
•
DALLAS, TEXAS 75222
C
230 C
TYPES 2N2395, 2N2396 N-P-N SILICON TRANSISTORS
* electrical
characteristics at
25°C free-air temperature (unless otherwise noted)
PARAMETER „ V,K|CK> v »(«Iceo
BrMMowl
lc ,
CoHedor-EniHrar
Currant Emitter Cutoff Currant
.
Static
Forward
Current Transfer Ratio
VK
Base-Emitter Voltage
v
Collector-Emitter
'"Ml i. 1
Common-Base Open-
^*K>
MTE
4.
c
=
I,
=
l
Orcoif Output Capacitance
2N2396 2N2395 MIN MAX MIN MAX
CONDITIONS
0,
TA
=
150°C
v,
l
l
VC6
=
10v,
l
c
=
VC i
=
10v,
U
=
=
Than paramtin mint l» iMawrad King pgl» iKknlqwi. PW
20ma, 0,
20
See Note 4
TA
=-55°C,
See Note 4
See Note 4
10
na
10
10
M°
1
P-o
See Note 4
f
=
20Mc
f
=
1
300 /ok. Duly Cyclt
<
60
40
1.3
0.6
1
1.3
V
1
y
30
Pf
2.5
2
30
Mc
120
20
10 0.6
V
10
1
l
UNIT V
40
40
See Note 4
E
lE
i
60
60
= = 0, c = lc = 150 ma. c = 150ma, lc = 150 ma. c = 150ma.
Vci
1.
Currant Transfer Ratio
.
E
l
Saturation Voltage Small-Signal Forward
1
h|
tin,
= 100ma, = 30v, Vci = 30v, V 6 = 5v, Vet = 10 Vct = 10v, U = 15 ma, = 15ma, l
25 °C free-air temperature (unless otherwise noted) 2N2432 2N4138
2N2432A UNIT MIN MAX MIN MAX
TEST CONDITIONS
PARAMETER Breakdown Voltage
V|BR)CBO
Collector-Base
V|h|ceo
Collector-Emitter
Breakdown Voltage
V(K|ECO
Emitter-Collector
Breakdown Voltage
= =
= = o, = 100 juA, l, = Ie Vc. = 25 V, E = VCB = 40 V, E = V C E = 25 V, v re = o VC E = 25 V, Vbe = 0, V CE = 40V, v re = o VCE = 40 V, v»= = o, Ve. = 15 V, lc = Vec = 15 V, V K = Vec = 15 V, V K = 0, VCE = 5 V, c = 10 ju.A mA lc = VCE = 5 V, lc
lc
100 /uA
l
10 mA,
li
E
See Note 5
30
45
V
30
45
V
Collector Cutoff Current
Icao
V
18
15
nA
10
l
Collector Cutoff Current
Ices
Emitter Cutoff Current
Ieso
Iecs
Emitter Cutoff Current
h re
Static
TA
TA
TA
= =
125»C
1
hreiim)
Forward Current Transfer Ratio
Vec
(Inverted Connection)
VcE(sot)
Collector-Emitter Saturation Voltage
Ib Ib
Vsciofii
Offset Voltage (Inverted Connection) 1.
w
=
125°C
Small-Signal Common-Emitter
VCE
Forward Current Transfer Ratio
VC B
Output Capacitance
C.b
o.
Ie
o.
u
Open-Circuit
mA,
C
3 0.15
0.15
V
1
0.7
20
15
n
12
12
pF
12
12
pF
12
12
pF
12
12
pF
=
100 yxA,
0,
f
o,
f
=
20 MHz
= =
1
1
1
140 kHz
vE .
=
0,
lc
=
0,
f
Veb
=
0,
lc
=
0.
f
= =
MHz,
140 kHz 1
MHz,
See Note 6
=
t 300 /is, duty cycle 5^ 2%. p are measured using three-terminal measurement techniques with the third electrode (emitter or cb and Ceb
This parameter mutt be measured using pulse techniques.
50
1
f
Emitter-Base Capacitance
5.
30
See Figure 2
1
= =
nA
See Note 6
Input Capacitance
6.
NOTES:
= =
200
mV mV
1.
1
nA
200
0.4
See Figure
=
2
0.5
l
lc
nA
2
1
i
5 V,
2
See Figure
mA,
=
nA
2
50
l
1mA, 1
nA
250
2
Collector-Base Capacitance
Common-Base Ciba
mA,
200 fiA
= 0.2 mA c = 10 mA u = o. e = o. = 0, E = kHz,
10
30
lE
f
VC B Cob
V,
On-State Resistance
Common-Base Open-Circuit Cobo
5
0.5
= =
•=
Small-Signal Emitter-Collector ftc|on)
=
=
nA
250
125°C
1
Static
nA
10
l
Forward Current Transfer Ratio
nA
10
l
collector
respectively) guarded.
PARAMETER MEASUREMENT INFORMATION
See
Note
{/
h
a
^ c F1
^J
• - 100 f
=
1
|iA
kHz
r«bnl = FIGlIRE 2
MEASUREMENT CIRCUIT FOR EMITTER-
MEASUREMENT CIRCUIT FOR OFFSET VOLTAGE NOTE
a:
The voltmeter must hove high enough impedance that halving the value
COLLECTOR ON-STATE RESISTANCE of the voltmeter
impedance does not change the measured value,
indicates JEDEC registered data.
PRINTED IN
4-126
Tl
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75Z22
or
cannot assume any responsibility represent
that
they ore
free
(or
USA
37
any tir'oilt shown
from patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPE 2N2453 DUAL N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 7211682, MARCH 1972
TWO TRANSISTORS IN ONE PACKAGE RECOMMENDED FOR •
Differential Amplifiers
•
Low-Level, Low-Noise Audio Amplifiers
•
Low-Level Flip-Flops
'mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designate true position. Leads having maximum diameter (0.019") measured in gaging plane 0.054" +0.001" -0.000" below the seating plane of the device shell be within 0.007" of their true position relative to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
'absolute
maximum
1
1
2
COLLECTOR
2
ratings at 25° C free-air temperature (unless otherwise noted)
EACH TOTAL TRIODE DEVICE 60 V 30 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1)
Emitter-Base Voltage
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
...
Continuous Device Dissipation at 100° C Case Temperature Operating Collector Junction Temperature
mA
W W 0.35 W
W W 0.7 W
0.2
0.3
0.6
1.2
200°
-65° C to 200° » 300°C
Storage Temperature Range
*
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
V
7
50
Continuous Collector Current
—
—
This value applies when the base-emitter diode Is open-circuited. Derate linearly to 200° C free-air temperature at the rates of 1.14 mW/°C for each triode end 1.71 mW/°C for total device. 3. Derate linearly to 200° C case temperature at the rates of 3.43 mW/°C for eech triode and 6.86 mW/°C for total device. 1.
2.
•JEDEC
registered data. This data sheet contains
all
applicable registered data In affect at the time of publication.
TEST CONDITIONS MIN 0.9 Vce - 6 V, lc - 1 mA, See Note 8 Vce " 6 V, lc - 1 mA, See Note 6, 0.86 T A -_6B Cto126°C VcE'BV, Ic-IOmA Vce - B V, lc - 1 mA vce b v, ic - io ha, AT A - [26°C-(-B6°)l and [12S°C-26°C]
MAX
UNIT
1
1
3 6
mV mV
10
«V/°C
MAX
UNIT
7
dB
'operating characteristics at 25° C free-air temperature Individual trloda charaotarlttlct (at* nota 4)
PARAMETER
TEST CONDITIONS
VcE-SV,
Spot Noln Figure
F
f
NOTES:
4. B. 6.
•JEDEC
-
1
l
C -10*iA,
fig
MIN
-10
Ml,
kHz
The terminals of the triode not under test are open-circuited for the meesurement of these This parameters must be measured using pulse reehnequea. tyy " 300 M*t duty cycle < 2%. The lower of the two hpg reedlngs Is teken es hpgi
OINKNSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
maximum
ratings at 25°C free-air temperature (unless otherwise noted) Continuous Forward Gate Current Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 1) Total Device Dissipation at (or below) 25°C Case Temperature (See Note 2) -195°C to Storage Temperature Range
'absolute
2N2497 TEST CONDITIONS
PARAMETER Drain-Gale Breakdown
'ess 'ess 'oss 'dIoHI
'DS
0.5 1.5
+
w w
200"C
characteristics at 25°C free-air temperature (unless otherwise noted)
'electrical
V(R»|DSO
-10 ma
= -10 ju. = v ss = v DS = -io«. »DS = -'S«. = — 100 /«, l
Voltage (See Nolo 3)
Gate Cutoff Current
Gate Cutoff Current Zero-Gate-Voltage Drain Current Pinch-Off Drain Current Static Drain-Source Resistance
D
v ss
10 ,.
10 ,.
'[,
= =° »OS = « A = ISO'C »es = l
s
V
MAX
— 20
-20
MIN
MAX
-20
0.01
DS
2N2500
2N2499
2N2498
MAX MIN
MIN
UNIT
MAX
-20 0.01
0.01
10
MIN
10
10
V
0.01
jua
10
/"
T
»
-3
-1
V 6S See Nolo 4 :
*SS
=°
-2
-o
—5
— 10
— 10
-IS -10
1000
BOO
BOO
0.2
B.2
0.2
-1
—4
ma
-10
M" ohm
Small-Signal Common-Source l»i.l
w
0.2
/imfca
2200
jumho
Input Admittance
Small-Signal Common-Source
Forward Transfer Admittance Small-Signal Common-Source
IrJ
= -">'
v DS f
=
1000 l
D
2000
3000
1500
2000
4000
1000
See Note S
:
kc
1
0.1
0.1
0.1
0.1
jLunhe
20
40
100
20
jumho
Reverse Transfer Admittance
U
Small-Signal Common-Source
W
Smalt-Signal Common-Source
Output Admittance
Forward Transfer Admittance
Common-Source ti..
Short-circuit
Input Capacitance
V DS f
=
»6S f
=-10,, 10
=
=
1
D
:
See
HaleS
°.
*DS
= - 10 V
no
1800
1350
900
mc
jumho
32
32
32
32
P«
3
3
4
1
dk
5
db
140 kc
"operating characteristics at 25°C free-air temperature V os f
NF
Spot Noise Figure
V DS f
NOTES:
=
=—
5 »,
kc,
1
= -S».
= 10
cps,
= — ma = IW I„ = -1 ma
l
1
D
R
s
s\
e
1
=
10 MSI
Derate linearly to 175 C free-air temperature at the rate of 3.3 mw/°C. 2. Derate linearly to 175°C case temperature at the 1.
10 mw/°C. 3. This parameter corresponds closely to V( BR )d SS for Drain-Source Breakdown Voltage (the Vqs = °'- V (BR)DSV * tne Drain-Source Breakdown Voltage for other values of Vqq) may be calculated from: rate of
|
= =
NOTE
* V ss
NOTE
S;
'Indicates
l
JEDEC
2N2497
2N2498
2N2499
5 v
< i
B >
— 2 ma
— 5 ma
— registered
1
ma
2N2500
<>
—
1
ma
data.
OSES CHIP JP71
V (BR)PSVI ~ |V
PRINTED IN U.S.A.
Instruments Texas INCORPORATED TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
•
DALLAS, TEXAS 7S222
4-131
TYPES 2N2S37 THRU 2N2S40 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 694130, AUGUST 1963-REVISED JANUARY 1969
DESIGNED FOR MEDIUM-POWER SWITCHING
AND GENERAL PURPOSE AMPLIFIER APPLICATIONS
* mechanical
Total Switching
•
High fT
•
hFE Guaranteed from
2N2537 and 2N2538 are 2N2539 and 2N2540 are
THE COLLECTOJt
-1.5
T
1
MIN
—
v,
at
150 ma
20 ma
ma to 500 ma
IS IN
in
EUCTJMCAl CONTACT WITH THE CASE
m-
=—
MIN
OUTLINE IN—r— TMS ZONE OPTIONAL
0.009
T± 0.200
I
ifAOS
3
0.010
Ojj,
TO-5
11
I
,,,«
MTAAS Of
>
I
J
oin MA _L_
MS.
-. "»
DIMENSIONS
maximum
'absolute
20
o.too—
_
-L
0.100
1
80 nsec max
at
JEDEC TO-S packages. JEDEC TO- 18 packages.
in
-j
-r—
I
...
250 Mc min
•
data
Device types Device types
a
Time
•
.
^-1 EMITTEI
ME
III
INCHES UNLESS OTHEIWISE SPECIFIED
TO-18
ratings at 25°C free-air temperature (unless otherwise noted)
2N2537 2N2538
2N2539 2N2540
60 v 40 v 30 v 5v
60 v 40 v 30 v 5v 0.8 a
Collector-Base Voltage Collector-Emitter Voltage (See
Note
1)
Collector-Emitter Voltage (See
Note
2)
Emitter-Base Voltage
0.8 a
Collector Current
25°C Free-Air Temperature (See Notes 3 and below) 25°C Case Temperature (See Notes 5 and 6)
Total Device Dissipation at (or below) Total Device Dissipation at (or
wloo
appllos
whoa
thi baio-amlttor rosistanco (Rig)
2. This valuo applies
who*
tho baso^atittor diodo
1. Tblf
is
if
oqual to or
lots
200°C Itn-olc t.rnrmot.r.
4.
Boron 2N2S3» and 2H2540
liaoariy to
2M*C
5.
Dorolo 2N2J37 ood IN2S3I llnooriy 10 IDO'C coso lomporotoro at too rata of 17.2
<.
Dorato 2N253* and 2N2S40 llnoatly to 200° C caso tontporattiro at
FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN AMPLIFIER APPLICATIONS •
For Complementary Use with 2N929, 2N930, 2N2483, 2N2484, and 2N2586
•
Guaranteed
• •
hFE * 10 m A, -55° C and 25° Low Noise Characteristics Usable at Collector Currents as Low as 1 n A
•mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
f ALL JEDEC TO-46 DIMENSIONS AND NOTES ARE APPLICABLE T TI guarantaad
•absolute
maximum
minimum. Tha JEDEC
raglatarad
minimum
laad dlamatar for tha
TO-46
l»
0.012.
ratings at 25° C free-air temperature (unless otherwise noted)
-60 V -45 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
_6V
Emitter-Base Voltage
-3° mA
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1
.
2.
•JEDEC
4-138
mA
collector currant whan tha baia-amlttar dloda and 10 Thla valua appllaa batwMn Darata llnaarly to 200° C fraa-alr tamparatura at tha rata of 2.28 mW/°C.
raglatarad. This data ahaat contain!
all
la
POST OPFICI BOX 5012
•
DAIXAS, TtXAS 7S222
mw
opan-clrcultad.
applicable raglatarad data In affact at tha tlma of publication.
Instruments TexasINCORPORATED
400
—66 C to 200 C 230 C
USES CHIP P19
TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS
'electrical characteristics at 25° C free-air
temperature (unless otherwise noted)
PARAMETER
MIN -60 -45 -6
v (BR)CBO v (BR)CEO v (BR)EBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
lE
ICBO
Collector Cutoff Current
'CES
Collector Cutoff Current
Emitter Cutoff Current
V CB = -45 V, E = V CE = -45 V, V BE = V CE " -45 V, V B E - o. Ta= 170°C V EB = -5V, ic = o V CE = -5V, C =-10mA V C E - -5 V, C = -10»iA, T A = -55°C V CE = -5 V, C = _600^A V C E - -5 V, c = -10mA, See Note 3 B - —0.5mA, c = -10mA, See Note 3 IB - -0.5 mA, c = -10mA, See Note 3
Collector-Base
Static
hFE
Breakdown Voltage
Forward Current
Transfer Ratio
IC = -10>iA,
Iq =
-10 mA,
= -10juA,
l
E =
lB
=
ic =
See Note 3
0,
o
Base-Emitter Voltage
40
I
10
I
60
Collector-Emitter Saturation Voltage Small-Signal
h ib
Small-Signal
Small-Signal
300
20 150
-0.9
600 -0.7
-0.5
V V
35
SI
-0.9
Common-Base
Common-Base
35
25
V CB
"
-5 V,
l
E =
1
mA,
f
-
1
25
10 x
10 x
10~4
10~4 1
Output Admittance Small-Signal
Small-Signal
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit Cobo
Output Capacitance Real Part of Small-Signal
n ie(real)
/imho
Common-Emitter
60
Forward Current Transfer Ratio
Nel
B
kHz 1
hfe
nA nA HA nA
Common-Base
Reverse Voltage Transfer Ratio
h b
100
-0.5
l
Input Impedance
h rb
120
UNIT
V V V -10 -10 -10 -2
350 -0.7
MAX
-60 -45 -6
-2
I
!
l
MAX MIN
-10 -10 -10
l
l
VBE v CE(sat)
2N260S
2N2604
TEST CONDITIONS
Common-Emitter Input Impedance
V CE
=
-5V.
l
C = -500 mA,
f
= 30
V CB
=
-5V,
i
e =
o,
f
-
V CE
=
-5V,
lC =
-1 mA,
f
- 100
1
MHz
350
150
1
1
MHz MHz
600
6
6
pF
200
200
n
'operating characteristics at 25° C free-air temperature
PARAMETER Average Noise Figure
F
3.
2N2604
TEST CONDITIONS
V CE
=
-5V,
l
C =-10(lA,
Noise Bandwidth - 15.7 kHz,
MIN
R G = 10kil,
2N2605
MAX
MIN
4
See Note 4
These parameters must be measured using pulse techniques, t^ = 300 jjs, duty cycle < 2%. is measured in an amplifier with response down 3 dB at 10 Hz and 10 kHz and a high-frequency 6 dB/octave.
4. Average Noise Figure
•JEDEC
73
3
UNIT dB
roll-off of
registered data
PRINTED IN
USA.
TexasINCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
MAX
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE BEST PRODUCT POSSIBLE.
SILECTt TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN AMPLIFIER APPLICATIONS 10 m A... 100 (A5T2605)
•
Minimum hFE
•
Low
•
Usable at Collector Currents as
a*
Average Noise Figure
.
.
.
3 dB, Max (A5T2605)
Low as
1
/xA
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting
MIL-STD-202C, Method 106B. The
transistors are insensitive to light.
0.160
x 0.010
NOTES:
A. Lead diameter is not controlled in this area. B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximumdiameter package. C. All dimensions are in inches.
absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
-60 V -45 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1)
~6 v
Emitter-Base Voltage
-30 mA
Continuous Collector Current Continuous Device Dissipation
at (or
below) 25°C Free-Air Temperature (See Note 2)
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1.
2.
625
mW
-65 C to 150 C 260 C
Storage Temperature Range
mA
collector currant when the base-emitter diode and 10 This value applies between Derate linearly to 150°C free-air temperature at the rate of 5 mWrC.
is
open-circuited.
^Trademark of Texas Instruments tu.S. Patent No. 3,439,238
4-140
USES CHIP P19
Instruments TexasINCORPORATED POST OFFICE BOX 6013
DALLAS. TEXAS 78322
TYPES A5T2604, AST2605 P-N-P SILICON TRANSISTORS
electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER v (BR)CBO v (BR)CEO
Collector-Base
V(BR)EBO
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'CES
Collector Cutoff Current
*EBO
Emitter Cutoff Current
"FE
Static
V BE v CE(sat)
Base-Emitter Voltage
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage Small-Signal
h ib
A5T2604
TEST CONDITIONS c = -10uA, c = -10mA, e = -10mA, V C B - -*5 V, l
l
l
l
I
V CE = V CE V EB = V CE =
E
-0
B = 0, ic = o l
E
l
I
l
See Note 3
-0
-46 V. V BE = -45 V, V BE = -5 V. ic-o
-5 V, V CE - -5 V, V C £ - -5 V, = —0.5 mA, 'B IB - -0.5 mA,
MIN -60 -45 -6
0,
TA
-10 -10 -200 -2
- 85°C
c = -10uA c = -500mA c *-10mA, See Note 3 =
l
c
l
c=
_10mA, _10mA,
MAX
40
AST2605 UNIT MIN MAX -60 V -45 V -6 V -10 nA -10 nA -200 -2 nA 100
120
350 -0.7
See Note 3
-0.9
600 -0.7
-0.5
See Note 3
Common-Base
25
300
150
60
25
35
-0.5
V V
35
n
-0.9
Input Impedance Small-Signal
n rb
Common-Base
Reverse Voltage Transfer Ratio Small-Signal
h ob
Common-Base
V CB
=
_5V,
l
E -
1
mA,
f
-
1
lOx
10x
10-4
10-4
1
1
kHz
umho
B
Output Admittance Small-Signal
hfe
Common-Emitter
60
150
350
600
Forward Current Transfer Ratio Small-Signal
Ne|
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit
cobo
Output Capacitance Real Part of Small-Signal
n ie(real)
Common-Emitter Input Impedance
v CE = _s V,
VCB
"
-5 V,
V CE
-
-5
V,
=
-500uA, f=30MHz
l
c
l
E =0,
f=1MHz
c --1mA,
f= 100 MHz
l
1
1
6
6
pF
200
200
n
operating characteristics at 25° C free-air temperature
Average Noise Figure
F
NOTES:
3. 4.
V CE
=
-5V,
l
c = -10uA,
Noise Bandwidth -
1
5.7 kHz,
A5T2605
A5T2604
TEST CONDITIONS
PARAMETER
MIN
R G -10kn,
MAX
MIN
MAX
4
3
UNIT dB
See Note 4
These parameters must be measured using pulse techniques, t^, = 300 us, duty cycle < 2%. Average Noise Figure is measured in an amplifier with response down 3 dB at 10 Hz and 10 kHz and a high-frequency 6 dB/octave.
roll-off of
PRINTED IN U.S.A.
TexasINCORPORATED Instruments TEXAS INSTRUMENTS DESERVES THE RIGHT TO MAKE CHANCES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
t
0.230 0.195 0.209 0.178
DIA
DIA
_L_ 0.500
MIN
2
-GATE 1 - SOURCE
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE
maximum
absolute
ratings at 25° C free-air temperature (unless otherwise noted)
Continuous Forward Gate Current •Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note
—10 1
'Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds electrical characteristics at
25° C free-air temperature (unless otherwise noted)
V (BR)GSS
Gate-Source Breakdown Voltage
GSS
Gate Reverse Current
*'GSS
Gate Reverse Current
*
Gate-Source Cutoff Voltage
'
v GS(off)
*'DSS
Zero-Gate- Voltage Drain Current
.
s
On-State Resistance Small-Signal
Common-Source
Forward Transfer Admittance
Common-Source >ss
Short-Circuit
Input Capacitance
V DS = l»A, V GS = 30V. v ds = o V DS V G S - 5 V, Vqs = 5 V, V DS = 0. V DS = -5V, D --1 M A V DS = -5V. V GS = Iq =
T A = 150°C
= 0.
f
-
1
kHz
_5V, V GS
= 0,
f
-
1
kHz
f
= 140 kHz
V DS
=
VDS--5V, V GS =1V,
V
10
30
nA nA
10
30
^A
30
10
V GS
- °.
UNIT
30
30
1
VDS
2N2609
MAX MIN MAX
MIN
V
1
4
1
4
-0.9
-4.5
-2
-10
mA
600
n
l
Small-Signal Drain-Source r dslon)
2N2608
TEST CONDITIONS
PARAMETER *
mA
300 mW -65 C to 200 C 300°C
)
1000
mmho
2.5
1
pF
30
17
opersiting characteristics at 25° C free-air temperature
*NF
Common-Source
V DS
Spot Noise Ftgure
NOTE
1
:
•JEDE C
Derate linearly to
1
75°C
free-air
BOTH
TEST CONDITIONS
PARAMETER =
-5V, V GS
= 0,
f
-
1
kHz,
MIN RG -
1
MSI
MAX
UNIT
3
dB
temperature at the rate of 2 mW/°C.
registered data. This data sheet contains
all
applicable registered data in effect at the time of publication.
USES CHIP JP71
PRINTED IN
4-142
Instruments Texas INCORPORATED POST OFFICE BOX 3012
•
DALLAS. TEXAS 73222
USA.
IEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
TYPES 2N2639 THRU 2N2844
DUAL N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S
721 1679,
MARCH
1972
TWO TRANSISTORS IN ONE PACKAGE RECOMMENDED FOR •
Differential Amplifiers
•
High-Gain, Low-Noise Audio Amplifiers
•
Transducer Signal-Conditioner Amplifiers
•
Low-Level Flip-Flops
'mechanical data
ALL LEADS INSULATED FROM CASE Dimansions without tolaranca dasignatatrua position. Laads having maximum dlamatar (0.019") maasurad in gaging plana 0.054" +0.001" -0.000" balow tha aaatlng plana of tha davlca •hall ba within 0.007" of thalr trua position ralatlva to a maximum width
B
tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
'absolute
maximum
1
1
2
COLLECTOR
2
ratings at 25° C free-air temperature (unless otherwise noted)
EACH TOTAL TRIODE DEVICE
V V 5V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1
45 45
)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25° C Case Temperature (See Note 3) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1.
2. 3.
'JEDEC
30
...
mA
W W
0.3 0.6
0.6 1
.2
W W
—
-65°C to 200°C * * 300°C
—
whan tha amittsr-bass dloda is opsn-circuitad. For aach trioda darata llnaarly to 175°C fraa-alr tamparatura at tha rata of 2 mW/°C For aach trioda darata llnaarly to 175°C casa tamparatura at tha rata of 4 mW/°C
This valua apptias
raglstarad data. This data shaat contains
all
appllcabla ragistarad data In affact at tha tima of publication.
USES CHIP Nil
TexasINCORPORATED Instruments POST OFFICE BOX Mil
•
DALLAS, TKXAS 7Ua>
4-143
TYPES 2N2639 THRU 2N2644
DUAL N-P-N SILICON TRANSISTORS 'electrical characteristics at 25° C free-air
temperature (unless otherwise noted)
individual triode characteriitici (see note 4)
V(BR)CEO
Breakdown Voltage
ICBO
Collector Cutoff Current
•ego 'EBO
Collector Cutoff Current
Emitter Cutoff Current
Static
l>FE
Forward Current Transfer Ratio
IO-10mA, V CB - 45 V,
16-0
V CB
- 45 V,
lE-0.
V5E V EB
- 5 V. - 5 V,
Ib-0 ic-o
VCE
" 6 V,
IC- 10
V CE
- 6 V,
IC" 10 uA,
VCE
- 5 V,
IC- 100 uA
V CE
- 5 V,
IC-
0.5
VBE
Base-Emitter Voltage
Ig"
v CE(sat)
Collector-Emitter Saturation Voltage
Ifj- 0.5
h,b
Smalt-Signal
Common-Base Input Impedance
Small-Signal
Common-Base
h rb
B
Collector-Emitter
h ob hfe
Small-Signal
Common-Base Output Admittance
Small-Signal
Common-Emitter
Forwerd Current Transfer Ratio Small-Signal
Common-Emitter
h.l
Forward Current Transfer Ratio
Cobo
Common-Base Open-Circuit Output Capacitance
mA, mA,
1
TA
MAX MIN MAX
45
45
- 160°C
T A - -55°C
IC- 10 mA,
- 6 V.
l
E
V 10
nA
10
10
»A
10
10
10
10
nA nA
300
100
20
10
55
110
65
130
0.6
1
mA
--1 mA,
0.6
1 1
1
f
-
1
kHz
32
32
25
6x
6x
10-4
10-4 1
1
VCE
- 6 V,
IC -
1
mA,
f
-
VCE
" 5 V,
lc "
1
mA,
f
- 20
VCB
- 5 V,
f-
lE-0.
1
1
kHz
MHz
UNIT
10
300
50
(iA
mA
IC" 10
MIN
25
V CB
Reverse Voltage Transfer Ratio
Sea Note 5
lB-0,
2N2841 2N2643 2N2644
2N2639 2N2640 2N2841
TEST CONDITIONS
PARAMETER
65
600
4
MHz
V V
n
jimho
600
130
dB
4 8
8
pF
triode matching characteristics
2N263B 2N2642
TEST CONDITIONS
PARAMETER
2N2640 2N2643
UNIT
MIN MAX MIN MAX hpE1
Static Forward-Current-Gain
hpE2
Balance Ratio
v BE1 _v BE2l
t
A(V BE i-V B E2>
AT A
Base-Emitter- Voltage Differential Base-Emitter-Voltage-Differential
Tempereture Gradient
V CE
- 5 V,
VCE
I
c -10mA,
See Note 6
0.9
-
- 6 V, C 10mA V C £ - 5 V, c -10mA AT A - [25°C - (-55°C)] and [125°C -25°C] I
1
0.8
1
10
5
mV
I
20
10
'operating characteristics at 25° C free-air temperature individual triode characteristics (see note 4)
ALL TYPES
TEST CONDITIONS
PARAMETER
UNIT
MAX VcB"5V,
T
Average Noise Figure
4, B.
6. 7,
•JEDEC
Ie--10uA,
RQ-10kn,
4
dB
Noise Bandwidth - 16.7 kHz, See Note 7
Tha terminals of tht trioda not undar tast ara optn-clrculwd for tht mmunmint of thaw characteristic!. This paramatar mutt ba maaturad using pulsa taehnlquas. t w - 300 M*. duty cycla < 2%. Tha lowar of tha two hpe ratdlngt Is taktn as hpgv Avaraga Noiaa Ffgura it maaturad In an ampliflar with rasponta down 3 dB at 10 Hi and 10 kHz and a hlgh-fntquancy 6 dB/octava.
rolloff of
ragistarad data
PRINTED IN U.S.A.
4-144
Instruments Texas INCORPORATED POBT OPPICI BOX Mil
DALLAB, T1XAS 7B1M
373
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF MILITARY AND INDUSTRIAL APPLICATIONS Low Leakage, Low Drive-Current Requirement, and Improved Reliability
•
Planar Process Ensures
'mechanical data Package outline
is
the same as
JEDEC TO-18
except for lead position. All TO-18 registration notes also apply to this
outline.
BASE-2 3leads
IotI
IS IN
ELECTRICAL CONTACT WITH THE CASE
dia -i
0.210
-4-BASE-2 0.230
0.108
ojoo
£m
DIA
OIA
I
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
_1_ 2-BASE1 1-EMITTER
'absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
-30 V
Emitter-Base-Two Reverse Voltage Interbase Voltage (See Note 1)
35 V 50 mA
Continuous Emitter Current
2
Peak Emitter Current (See Note 2) Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 3) Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
A
300 mW -65°C to 150°C 260°C
V
r 1. This rating is based upon allowable power dissipation: V B2B1 BB' p T2. This value applias for a capacitor discharge through tha amlttar-baaa-ona dloda. Currant
muit not exceed 10 pps. 125°C fraa-alr tamparatura
muit
fall
to 0.74
A
within 1.5
mi and
pulK-rapatitlon rata 3.
Oarata llnaarly to
'JEDEC registered
data. Thli data ihaat contains
all
at tha rata of
3 mW/°C.
applicable registered data In affect at the time of publication.
