Practical Work Report 1

SULT SULTAN HAJI HA JI AHMAD A HMAD SHAH S HAH

DEPARTMENT OF ELECTRICAL ENGINEERING

DEE6113 – CMOS IC DESIGN PRACTICAL WORK REPORT # 01

INTRODUCTION TO MICROWIND 2.6A SOFTWARE

LECTURER NAME: PUAN PUAN NOORFOZILA NOORFOZILA BINTI BAHARI

DATE DATE OF SUBMISSION: SUBMISSION: 28 JUNE 2016

SUBM SUBMIT ITTE TED D BY BY:

AZI AZIZUL ZUL HAK HAKIM IMII BIN BIN ZULKA ULKAFL FLEE EE

NO

REGISTRATIO N NO.

STUDENT NAME

CLASS

1.

02DEE14F10 6

AZIZUL HAKIMI BIN ZULKAFLEE

DEE D

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1.1TITLE Introduction to Microind !"6"

1.2LEARNING OUTCOMES 1. $nd%r&tnd t'% (%tur%& o( Microind &o(tr%" 2. Prctic% drin) t'% *+out o( &i,-*% d%.ic%& &uc' & MOS trn&i&tor" !. Prctic% &i,u*tin) t'% *+out o( &i,-*% d%.ic%& &uc' & MOS trn&i&tor"

1.!E"UIPMENT#TOOLS PC S%t / Microind !"6 &o(tr%"

1.4RESULTS %*o r% t'% r%&u*t& o( t'% (o**oin) 1" NMOS trn&i&tor " trn&i&tor *+out

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2" trn&i&tor cro&& &%ction

c" I4 C'rct%ri&tic& Cur.%

!" PMOS trn&i&tor Page | 3

" trn&i&tor *+out

2" trn&i&tor cro&& &%ction

c" I4 C'rct%ri&tic& Cur.%

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1.DISCUSSION 1" E5-*in t'% t%r,ino*o)+ t%c'no*o)+ (%tur%7"  T%c'no*o)+ (%tur% i& 8non & trn&i&tor &i9% or trn&i&tor (%tur%"  T'% (%tur% &i9% o( n+ &%,iconductor t%c'no*o)+ i& d%:n%d & t'% ,ini,u, *%n)t' o( t'% MOS trn&i&tor c'nn%* 2%t%%n t'% drin nd t'% &ourc%" ;or %5,-*%< t'% *,2d &i9% t't % c'oo&% in t'% (oundr+ r% t'% t%c'no*o)+ (%tur% t't -ro.id%d (or u& to &%*%ct on doin) t'% -rctic* or8" •

!" D%&cri2% t'% di=%r%nc% 2%t%%n ,icron nd *,2d unit in *+out d%&i)n -roc%&&" L,2d i& &c*2*% nd Micron i& not &c*2*% 'ic' i& :5%d" Micron i& :5%d (or t'% t%c'no*o)+ 2ut *,2d unit i& ,d% (or t'% d%&i)n%r7& con.%ni%nc% to dr *+out -ro-%r*+" Accordin) to +our &%*%ction t'% *+out &cr%%n i** d>u&t t'% )rid %&i*+" T'i& ,%t'od i& &i,-*+ countin) t'% &-c% 2%t%%n t'% )rid" •

3" PMOS trn&i&tor i& u&u**+ *r)%r t'n NMOS trn&i&tor in *+out" Gi.% n %5-*ntion" Du% to di=%r%nc%& in crri%r ,o2i*it+ 2%t%%n P nd N t+-% &%,iconductor< (or &i,i*r*+ do-%d c'nn%*& t'% c'nn%* o(  PMOS ;ET i** 2%  2it id%r t'n t'% c'nn%* o( n NMOS ;ET &o t't t'%+ 2ot' '.% id%ntic* c'nn%* r%&i&tnc%" To ,8% t'% c'nn%* id%r t'% PMOS ;ET i** t8%  *r)%r c'i- r%" •

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1.6CONCLUSION Gi.% TWO?!@ conc*u&ion& (or t'i& -rctic* or8" &%d on t'% -rctic* or8 2o.%< % 2*% to und%r&tnd t'% (%tur%& o( Microind &o(tr%" W% 2*% to u&% t'% Microind &o(tr% it'out n+ ,i&t8%& nd c'oo&% t'% corr%ct (%tur%& (or our -rctic* or8 %5-%ri,%nt" N%5t< % 2*% to -rctic% drin) nd &i,u*tin) t'% *+out o( &i,-*% d%.ic%& &uc' & MOS trn&i&tor" A&  -roo(< % 2*% to )i.% t'% outco,% r%&u*t (or t'i& -rctic* or8" W% 2*% to dr nd &i,u*tin) t'% *+out &ucc%&&(u**+ & &'on in t'% r%&u*t"

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