R IZI
(c) For R-C circuit, cos <|> =
R
cos
VR2
>
71
1
coC
+ CO2L2 R
515
Alternating Current and Electromagnetic Wave 4. Transformer :
Some Important Relations :
(a) Turn ratio,
(a) c = - L
(b)
(b)
V„
L
N„
(c) Efficiency,
(c) Refractive index =Vp r e r ^
output power
ES IS
input power
EP I P
CO E (d) T = ¥ = k
5. Electromagnetic Wave: E = EQ sin
and
6. Maxwell's Equations : r-> -> q (a) E • ds = (b) JC E0 (c) j E . d L = -
d<
1
B
= CQ
(e) Energy carried by electromagnetic wave (cot - kx)
1 2 ^E = o Efl E x volume, 2
B = B0 sin (cof - kx)
r
c0=-L= W 0
B2 UB = - — x volume 2p 0
Total energy, (i = Jig + l/g =
r^ -» B • ds = 0
JC
(f) Momentum,
^ dt
B
1p 2
+
2p 0
x volume
(For one photon)
p= ^
hc (g) Energy = y
(For one photon)
(d) J B . dl = p 0
Objective
Questions. Level-1
1. The A.C. current is given by J = 20 sin cof when the current is expressed in amperes, the rms value of current will be : (a) 20 (b) 20V2 (c) 20/V2 (d) 10 2. The rms value of current in an A.C. of 50 Hz is 10 amp. The time taken by the alternating current in reaching from zero to maximum value and the peak value will be respectively : (a) 2 x 10" 2 s and 14.14 amp (b) 1 x 10""2 s and 7.07 amp (c) 5 x 10 - 3 s and 7.07 amp (d) 5 x
10 - 3
s and 14.14 amp
3. A group of electric lamps having a total power rating of 1000 watt is supplied by an A.C. voltage E = 200 sin (310f + 60°) then the rms value of the circuit current is : (a) 10 amp (b) 10V2~amp (c) 20 amp (d) 20V2 amp 4. The phase difference between the current and voltage at resonance is : (a) 0
(b) §
(c) it
(d) -7t
5. The phase angle between emf and current in LCR series A.C. circuit is : (a) t i
0to| K
(d) 71
6. A choke coil is preferred to a rheostat in A.C. circuit,
then : (a) it consumes almost zero power (b) it increases current (c) it increases power (d) it increases voltage 7. A 12 £2 resistor and a 0.21 henry inductor are connected in series to A.C. source operating at 20 volt 50 cycles. The phase angle between the current and source voltage is : (a) 30° (b) 40° (c) 80° (d) 90° The reactance of a 25 pF capacitor at the A.C. frequency of 4000 Hz is : (a)
f n 71 (c) i o n
(b) V ^ Q (d) V i o n
The current in a LR circuit builds up to 3/4 th of its steady state value in 4 s. The time constant of this circuit is: 2 (b) {3> ln~2 S l n~2 f 4 , , 3 (d) (C) h 7 2 S h7IS 10. The power in A.C. circuit is given by P = E r m s i r m s cos 4>.
The value of power factor cos ()) in series LCR circuit at resonance is: (a) zero (b) 1
31
Cathode Rays, Photoelectric Effect of Light and X-rays Syllabus:
Discovery of electrons, cathode rays, — of electron, photoelectric effect and Einstein's equation for photoelectric effect.
Review of Concepts 1. Cathode Rays : It consists of fast moving electrons. If discharge tube is operating at voltage V, then 2 Ei, k =eV = 2i mv
More about cathode Rays : (a) Cathode rays were discovered by Sir William Crookes. (b) Cathode rays are a stream of fast moving electrons almost in vacuum. (c) Mass of electrons is (1/1837) times that of hydrogen atom. (d) Methods of producing electrons : (i) discharge of electricity through gases, (ii) thermionic emission, (iii) photoelectric emission, (iv) p-ray emission, (v) cold-cathode emission or field emission. (e) The acceleration produced on electron in parallel electric field.
£m
eE m
1
,=
b P-t V
J
2. de-Broglie Wavelength of Matter Waves : mv
h_J± p
where h = Planck's constant = 6.63 x 1CT34 J-s For charged particle, its value is
, _ Th
-JlmqV
150 Hence, for electron X (in A) = V^ V (in volt) 3. Einstein's Photoelectric Equation : /iv =
(b) If v < VQ, photoelectrons are not emitted. (c) The maximum speed of emitted photoelectrons is proportional to frequency of incident radiation. (d) The maximum speed of electrons does not depend upon intensity of radiation. (e) The number of photoelectrons depends upon intensity of light. (f) When emission of electrons takes place from the metal surface, the metal gets positively charged. (g) Photo-electric current is proportional to intensity of incident light. (h) If VQ is stopping potential, then 1 eV0=-rnvmax 2 he (i) Work function, <)> = hv0 = T— •
(f) The deflection of electron at right angles to its direction of motion (x-axis) after travelling distance t in perpendicular electric field is
2
where, v = frequency of incident radiation, VQ = threshold frequency, m = rest mass of electron (a) If v > VQ, photoelectrons are emitted.
+ i mu^x
(j) The rest mass of photon is zero, (k) Photon is neither accelerated nor decelerated. (1) E = pc formula is only applicable for photon. he (m) E = hv = —•• (For a photon.) (n) Total energy of radiation = nhv, where n = number of photons. (o) The velocity of photon is always equal to velocity of light. (p) Power = JI
Here, — = number of photons per second, (q) Photon never be charged, (r) elm of positive rays = IE
•— y
where E = electric field, B = magnetic field along Y-axis, I = length of field along X-axis (s) — of electron — = = 1.76 x 1011 C/kg m m rB
524
Cathode Rays, Photoelectric Effect of Light and X-rays 4. X-rays : X-rays are electromagnetic wave.
Here,
(a) c = (b) (c) (d) (e)
' in vacuum. W o X-rays are diffracted by crystals. X-rays affect photographic plate. X-rays have no charge. For continuous X-rays, = he —
EM = energy of electron in M shell 5. Moseley's Law : Frequency v of characteristic X-ray spectrum Vv" = a (z - o)
where, V = potential difference between target and the filament. (f) For characteristics X-ray, he
X= X=
for J C
he
X=F
Objective
where a and o are constant and screening constant. For Ka line, a = 1 and screening constant for La line, a = 7.4. 6. Bragg's Law : Direction of maxima of X-ray diffracted from crystal 2d sin 0 = nX (n-1,2,3,...) Intensity of X-rays transmitted through a thickness x of meterial -kx (k is constant) I = In e~
for Ka
ER ~ EM
= energy of electron in K shell, Ei = energy of electron in L shell,
f o r La
Questions. Level-1
1. Matter waves are : (a) electromagnetic waves (b) mechanical waves (c) either mechanical or electromagnetic waves (d) neither mechanical nor electromagnetic waves 2. Cathode rays are made to pass between the plates of a charged capacitor. It attracts : (a) towards positive plate (b) towards negative plate (c) (a) and (b) are correct (d) (a) and (b) are wrong 3. The X-ray tube is operated at 50 kV, the minimum wavelength produced i s : (a) 0.5 A (b) 0.75 A (c) 0.25 A (d) 1.0 A 4. A beam of electrons is moving with constant velocity in a region having electric and magnetic field strength 20 V m - 1 and 0.5 T at right angles to the direction of motion of the electrons, what is the velocity of the electrons ? (a) 20 m/s (b) 40 m/s (c) 8 m/s (d) 5.5 m/s 5. If the kinetic energy of the moving particle is E, then de Broglie wavelength is : (a) X = h<2mE
„h
(c) ^ =' V2mE
(b) (d) ^ =
6. When a beam of accelerated electrons hits a target, a continuous X-ray spectrum is emitted from the target, which one of the following wavelengths is absent in the X-ray spectrum if the X-ray tube is operating at 40,000 volt ? (a) 1.5 A (b) 0.5 A (c) 0.35 A (d) 1.0 A
7. The minimum wavelength of X-ray produced by electron accelerated through a potential difference of V volt is directly proportional t o : (a) W (b) <2V (<0 w
(d)
V
8. In a discharge tube at 0.02 mm there is formation o f : (a) Faraday's dark space (b) Crooke's dark space (c) Both spaces partly (d) Crooke's dark space with glow near the electrons 9. Therm-ions are: (a) photons (b) protons (c) electrons (d) nuclei 10. X-ray is used to : (a) investigate the structure of solid (b) to charge a body (c) to activate the radioactivity (d) to change the structure of solid 11. The cathode of a photoelectric cell is changed such that work function changes from
(d) none of these
The 'figure shows the observed intensity of X-rays emitted by an X-ray tube as a function of wavelength. The sharp peaks A and B denote: (a) band spectrum (b) continuous spectrum (c) characteristic ratio Wavelength (d) white radiation
32 Atomic Structure Syllabus:
Rutherford's model of the atom, Bohr's model, energy of quantization, hydrogen spectrum.
Review of Concepts (i) Time period of revolution of electron :
1. Bohr's model:
(a)
Ze
mv r
47reo r
-
(i) T = j
1 = 9 x 109 Nm2/C2 47I£(•0 Here, v = velocity of electron in nth orbit r = radius of nth orbit ill = mass of electron nh (b) mvr = 2tt n = principal quantum number, n = 1, 2,
(j) AE = 13.6 (k) ^ = R
v
f. 2
2
"1 V
2
" 2/,
(ii) rn = " ^ x 0.53 A v y Here, Z = atomic number, (for H-atom Z = 1) (i) r =
"2
V
(ii) v = f
) 137 c
V
/\
n
/
10 s
Here, c = 3 x m/s (e) Kinetic energy of electron : K= (f)
mZ2e*
lmv2 2"""
8 zhi2h2
Potential energy:
NA =
*
U-
=
c X
N0nt (2Ze2)2
1
4 ( 4 7 t e 0 ) 2 r 2 M ) 2 ' sin 4 ^
where NQ = total number of a-particles that strikes the unit area of the scatterer; n = number of target atoms per m 3 ; t = thickness of target; Ze = charge on the target nucleus; 2e = charge on a-particle; r = distance of screen from the target and VQ = velocity of a-particle at nearest distance of approach. Distance of closest approach: r0 = 4tc£O
- mZ2e4
_AE h
2. Rutherford's model: Rutherford scattering formula
(d) Speed of electron : Zez 2 E 0nh
eV where Hj < h2
Here, R = Rydberg constant = 1.0973 x 107 per metre . (1) Frequency of radiation :
nmZe2
(i) z> =
/
2
"1
h = Planck's constant = 6.63 x 10" 34 Js (c)
sec
(ii) T = (1.52x 10 - 1 6 )
Here, e 0 = 8.85 x 10" 12 C2/Nm2,
2 Zei Ek
4e2n2h2
3. Spectral series
mZ2ei
(a) Lyman:
(where Ey is KE of incident particle)
(g) Total energy : (i) E = K+U = -
(ii) E„ = -
Z2Rhc
2[2 8e5n2h2
= -13.6
'Z* eV n \
/
me '"" (Rydberg constant) 8eq ch (h) Orbital frequency of electron : where,
4
mZV 4e§
n3h3
n2
(b) Balmer :
(visible region) where n > 2 f1 9
R=
f liTT
/
\
(ultraviolet region) where n > 1
(c) Paschen: (d) Brackett:
„2 (infrared region) where n > 3
f =R
(I 16
„2
(infrared region) where n > 4
534
Atomic Structure (e) Pfund :
H
(f) Humphery :
25'
J_ — = R 36'
where n > 6
(infrared region) where n > 5
Objective Questions Level-1 1. The mass of an electron in motion depends upon: (a) direction of motion (b) its velocity (c) initial mass of e~
(d) its shell number
2. The mass and energy equivalent to 1 a.m.u. respectively are : (a) 1.67 x 1CT27 g, 9.30 MeV (b) 1.67xlO" 2 7 kg, 930 MeV (c)
1.67xlO"" 27
kg, 1 MeV
(b) 4 (d) 7
4. The acceleration of electron in the first orbit of hydrogen atom is: (a) (c)
(b) (d)
4n2m2r3
h' 4n2mr m2h2 4KV
that constitute one ampere of
current is : (a,
265x10
16
(c) 4.8 x lO10
(b) 6 2 5 x 1 0 12 ->16 (d) 625x10*
The angular momentum of electron in hydrogen atom is proportional to : (a) ^
11. For electron moving in nth orbit of the atom, the angular
velocity is proportional to : (a) n (b) 1 /« i
respectively are: (a) 10" 14 m, 10" 10 m
(b) 10 _1 ° m, 10" 8 m
(c) 10 _ 2 0 m, 1 0 _ 1 6 m
(d) 10~~8 m, 10 - 6 m
13. In the lowest energy level of hydrogen atom, electron has the angular momentum:
«i ,.
h < * F S 14. The velocity of an electron in its fifth orbit, if the velocity of an electron in the second orbit of sodium atom (atomic number = 11) is v, will be : 22 (a) v
,\ (c) 2 V
5
(a)
-n(n-l)
(c) n(n +1)
atom, when it is in its second (b) double (d) nine times then radius of 3rd orbit of
(b) ±n(n
+ 1)
(d) n (n + 1)
16. The KE of the electron in an orbit of radius r in hydrogen
atom is : (e = electronic charge) (a)
r
(b) \
(c) r 2
(d)|,
15. Atomic hydrogen is excited to the nth energy level. The maximum number of spectral lines which it can emit while returning to the ground state, is :
(c)
8. The radius of hydrogen excited state, becomes : (a) half (c) four times 9. If Bohr's radius is Rq, hydrogen atom will be : (a) 3 R 0 (b) 6R0
(d)
(c)
5. If the electron in a hydrogen atom jumps from an orbit level tii = 3 to an orbit level « 2 = 2, the emitted radiation has a wavelength given by : , _ 36 (b) (a) 5R 36 R (d) \ = (c) X ~R 6. Number of electrons
( d ) f
12. The order of size of nucleus and Bohr radius of an atom
3. It is given for the azimuthal quantum number 1 = 3, the total number of different possible values of the magnetic azimuthal quantum number, »«/ is :
4 n2m
(b) 3R
(c) »
(d) 1.67xlO" 3 4 kg, 1 MeV
(a) 3 (c) 5
(a) R , . 5R (C) 36
e2 7
17. In the lowest orbit, the binding energy of an electron in hydrogen atom is 13.6 eV. The energy required to take out the electron from the lower three orbits in (eV) will be: (a) 13.6, 6.8, 8.4 (b) 13.6, 10.2, 3.4 (c) 13.6, 27.2, 40.8 (d) 13.6, 3.4, 1.5 18. Minimum excitation potential of Bohr's first orbit in
(c)
9RQ
(d) 12R 0
10. In terms of Rydberg Constant R, the wave number of the first Balmer line is :
hydrogen atom is: (a) 13.6 V (c) 10,2 V
(b) 3.4 V (d) 3.6 V
33
Nucleus Syllabus:
Atomic masses, size of the nucleus, radioactivity, rays and their properties-alpha, beta and gamma decay, half life, mean life, binding energy, mass-energy relationship, nuclear fission and nuclear fusion.
Review of Concepts (vii) m a v a = niyVy (In one dimension)
1. Nucleus : It is most dense space of the universe, (a) Radius : R = R A 1/3 0
where, Rq = 1.1 x 10
15
(viii) In general, "p a + ~p = 0
m, A = mass number
Here, ~pa = momentum of a-particle,
(b) Volume :
"p = momentum of daughter nucleus y
V = ! * R 3 = |,»IR30A
(b) P-decay: It is stream of fast moving electrons. In this process, a neutron is converted into proton and electron. The basic equation is n —»p + e + v (anti-neutrino)
(c) Density : Density =
Mass of nucleus Volume of the nucleus Am„
(i)
v is chargless, massless particle. It is just like photon. Its spin is ± 1/2. (ii) Cause : Nucleus has too many neutrons relative to number of protons. (iii) Effect: Due to emission of (J-particle, the mass number remains constant, but atomic number increases by 1. (iv) Decay equation:
4 a V3,3 - K (RqA ) m
= 10 17 kg/m3
P
where mp = 1.67 x 10~27 kg, R 0 = 1.3 fm. (d) Atomic mass unit:
zX 1
1amu = - kg mass 6.02 x 10 26
e-g-,
= 1.66 xlO" 2 7 kg = 931 MeV/C2 (e) Atomic number (Z) = number of protons. (f) Mass number (A) = number of protons + number of neutrons. 2. Decay Processes : (a) a-decay: It consists of He 2+ ion. (i) Cause : Large size of nucleus (A > 210). (ii) Effect: Mass number decreases by 4 and atomic number decreases by 2. (iii) Decay equation: , A — 4-> • , e4tt zX Z-2 - + 2 " 238 92
u
(vi) Q = \ myVy + | m a vl
4- v
^N + fT + v
(v) Q-value: Q = (.mx-my) c Here, mx and my are atomic masses. (vi) Q-value energy is shared by emitted electron and anti-neutrino. For maximum kinetic energy of electron, antineutrino energy is negligible. Q = (KE) max of electron (c) Positron emission or p+ decay: Positron is anti-particle of electron. Its rest mass is equal to that of electron and charge is + e. (i) Cause : Nucleus has too many protons relative to number of neutrons. (ii) Effect: Mass number remains constant but atomic number decreases by 1. (iii) Basic equation : p » n + e + V (neutrino) (iv) Neutrino is anti-particle of anti-neutrino. (v) Decay equation:
(iv) Q = [m (AXZ) - m(Y) - m (He)] c 2 (v) This process provides kinetic daughter nucleus and a-particle.
14,-
,Y + z+ 1
>
energies
to
e.g.
z
_^Y + e + + v
64Cu > ^Ni + e+ + v 29 Q = (mx-my2mc) c2
(vi) Q-value: Here mx and my are atomic masses.
Nucleus
545
(d) Electron capture : This is similar to positron emission. In this process, inner most atomic electron is captured by nucleus. (e) y-decay : y-rays are electromagnetic waves of short wavelengths. The main reason for instability of nucleus is excess energy of nucleus. Due to y-decay, neither the mass number nor the atomic number changes but energy of nucleus reduces. 3. Law of Radioactive Decay:
N,=
N0X1 ^ A>2 — Xi ~
and
N 3 = N0
/
Xxe'^ - X^e'^' X2
+1
(c) Decays of nuclei by two processes simultaneously : In this case, Xef[ =
(a) N = N0e~Xt Here, N = present number of radioactive nuclei N 0 = initial number of nuclei
+
C
, , . . 0.693 A. = decay constant = - — r — :—half life period (b) A=A0e~Xt Here, A = activity at an instant t = XN AQ ~ activity at f = 0
(d) Radioactive equilibrium:
(c) The number of decay nuclei in time t is
5. Binding Energy : The binding energy of a nuclide
XxNx = X2N2
N1=N0-N = N0(l-e-Xf) (d) Unit of activity :
Z,XA is given by
1 curie = 3.7 x 10 10 disintegrations per second or becquerel (e) Mean life = 1/X 4. Radioactive Decay in Different Situations : (a) Disintegration and formation of radioactive substance simultaneously: Formation . decays A r t) q (constant) The useful equation is ^
= q - XN, where q = rate of
formation of A. (b) Decays chain: Nx N3 2 decays ^ decays A C unstable stable unstable
But Nx + N2+N3 Also,
Objective
mx = mass of nucleus. Here factor [Zmp + (A - Z)M„ - mx] is called the mass defect. Binding energy is utilised to bind the nucleons in the nucleus or to break the nucleus into its constituent particles. 6. Nuclear Fission: Breaking of heavy nucleus in two nuclei 235
+ on1
> x + y + p (on1) + 200 MeV
where x and y are any two isotopes having mass number about 40% to 60% of original nucleus and p is number of neutrons which may be 2 or 3. 7. Nuclear Fusion: Synthesis of lighter nuclei into heavier nuclei at a very high temperature = 2 x 10 7 K at high pressure. In a nuclear reactor: (i) A moderator is used to slowdown neutrons. Graphite and heavy water are suitable moderators. (ii) Cadmium, boron and steel rods are used as controller in nuclear reactor.
Tt
and
where mp = mass of proton, m = mass of neutron and
92U
Here, dNi = - X-jNJ dN2 , —TT = AjNi - X2N2 dt
E B = [Zmp + (A - Z) mn - mx]c2
dN3 —j— = X2N2 dt
= constant Ni =
Questions Level-1
The penetrating powers of a, P and y radiations, in decreasing order are: (a) y, a, p (b) y, p, a (c) a , p , y (d) p, y, a A sample of radioactive material has mass m, decay constant X and molecular weight M. Avagadro's constant = NA. The initial activity of the sample is : (a) Xm
(b)
M
(c)
XmNA M
(d)
mNAeK
If radium has half-life of 5 years. Thus for a nucleus in a sample of radium, the probability of decay in ten years is: (a) 50% (b) 75% (c) 100% (d) 60%
34 Semi-conductor Devices Syllabus:
Energy bands in solids, conductors, insulators and semi-conductors, p-n junction, diodes as rectifier, junction transistor as an amplifier.
transistor,
Review of Concepts 1. Pure or Intrinsic Semi-conductor: Generally, the elements of fourth group behave as semi-conductors, e.g., silicon, germanium. (a) The resistivity of semi-conductor decreases with increase of temperature. (b) At OK, conduction band is completely vacant and semi-conductor behaves as insulator. (c) A pure semi-conductor has negative temperature coefficient. (d) In the case of pure semi-conductor, number of conduction electrons = number of holes. (e) Electric current is
_ Ge
_
Ge .
II Ge
:oe:
; Ge
II Ga ~
Ge
Conduction band
Impurity level L
a = n g ep e + nAep„ Conduction band 3 Impurity level
band
Here, ne = density of conduction electrons Mft = density of holes pe = mobility of electron (iv) The
number
of
hole-electron
pairs
is
T 3 / 2 e~ A E a k T
proportional to Here, AE = energy gap T = temperature in kelvin 3. p-n Junction or Semi-conductor diode :
(a)
Valence band
(ii) The impurity atoms in p-type semi-conductor are known as acceptor atoms, (b) For n-type semi-conductor: If pentavalent element (e.g., phosphorus) is added to semi-conductor as impurity, the resultant semi-conductor is known as n-type semi-conductor. (i) The impurity atoms in n-type semi-cor^"''tor are known as donor atoms.
Ge
Ge
(ii) In the case of n-type semi-conductor, majority charge carriers are electrons. (iii) The conductivity of semi-conductor is
I = Ie + k due to conduction
Here, I e = current electrons, I/t = hole current (f) Pure semi-conductor is also known as intrinsic semi-conductor. 2. Impure or Extrinsic Semi-conductor: If impurity is added to intrinsic semi-conductor, then the semi-conductor is known as extrinsic semi-conductor. The process of adding impurity to semi-conductor, is known as doping. (a) For p-type semi-conductor: If trivalent elements (e.g., indium, gallium, thallium etc.) are doped to semi-conductor, the resultant semi-conductor, is known as p-type semi-conductor, (i) In the case of p-type semi-conductor, majority charge carriers are holes.
Ge
Reversed biased
(b)
(c)
- t x
Forward biased
(d) For ideal diode, the resistance in forward biased connection is zero.
Semi-conductor Devices
557
(e) For ideal diode, the resistance in reversed biased connection is infinite. (f) In the case of ideal diode, drift current is zero. (g) If no voltage is applied to diode, drift current and diffusion current are same in magnitude. (h) The drift current and diffusion current are always opposite to each other. (i) p-n junction does not obey Ohm's law. 4. p-n Junction as a Rectifier: A rectifier circuit converts A.C. into D.C. (a) Half wave rectifier circuit:
where Rp is the forward resistance of junction. In forward biasing, I--
Rp<<
V0 sin (cof + <|>) RL
21Q I0 J dc = — and i r m s = —
(ii) Currents (iii) Power
PDC
= W RL (iv) Efficiency ot rectification dc
=
x 100% = -
Input A.C.signalf'^'
vt
5. Transistor:
Output voltage VQ sin
1+ « Z
(v) Ripple factorr = ~ = 0.482 'dc
Input voltage
(i) 1 =
81.2 o/ /o Rp
xzs.
Collector
Emitter Base
'ZZS
(a)
n
(cof + <|>)
Collector
P
0
i
Emitter Collector
Rl + Rf
where Rp is forward resistance of junction. In forward biasing,
Rp «<
Emitter Base Collector
Ri
(b)
V0 sin (cof + 4>) I=-
(iii) Power
=A V2
I pdc
= Jdc rL
PAC =TIMS(RL + RF) (iv) Efficiency of rectification Pdc
x 100% =
n
P
J
RL
I0 (ii) Currents L c = —• 71
P
40.6%
Rf>
1 +
r7
Base
\ Emitter
(c) IE = lE + Ic IQ AIQ (d) a = — = —— < 1 (common base configuration) IE „ Ic Af c (e) p = — = —— > 1 (common emitter configuration) IB Aig a p (f) P = 1 - a or a = p, r+„1 6. Common Base Transistor Amplifier : npn transistor used as amplifier in CB mode is shown below : npn
(v) Ripple factor
r = ^ = 1.21 Jdc hr > 2dc U 'ac
9-V,
(b) Full wave rectifier circuit: Input A.C.signal (rw
npn transistor used as amplifier in CB mode (a) Current gain a =
AIE \ lJVcb
- constant
(b) Voltage gain A v = ^ f 1 = l T ~ x a AVin R in aR (c) Power gain Ap = ax R in (i) 1 =
V0 sin (cof + (j>) ~~ Rl + RF
= a2
R_ Bin
558
Semi-conductor Devices 558 7. Common Emitter Transistor Amplifier :
(a) Current gain (3 = —— AIb
(b) Voltage gain Av =
= constant
= (3~ L\ V I\{T in in
(c) Power gain AP = P x p
Input
v
R
:
A = P2 Pin
v. Output ripn transistor u s e d a s amplifier in C E m o d e
Objective Questions Level-1 1. The nature of binding for a crystal with alternate and evenly spaced positive and negative ions is : (a) metallic (b) covalent (c) dipolar (d) ionic
10. In a p-type semi-conductor, the majority carriers of current are: (a) holes (b) electrons (c) protons (d) neutrons
2. After ordinary temperature, an increase in temperature increases the conductivity of: (a) conductor (b) insulator (c) semi-conductor (d) alloy
11. The energy gap between conduction band and valence band is of the order of 0.07 eV. It is a : (a) insulator (b) conductor (c) semiconductor (d) alloy 12. In a common emitter amplifier, input resistance is 3 £2 and load resistance 24 £2. What is the voltage gain ? (take a = 0.6) (a) 8.4 (b) 4.8 (c) 2.4 (d) 1.2
3. In a television tube, electrons are accelerated by : (a) magnetic field (b) electrostatic field (c) both of these (d) none of these 4. At 0 K a piece of germanium : (a) becomes semiconductor (b) becomes good conductor (c) becomes bad conductor (d) has maximum conductivity 5. Solid C 0 2 form : (a) (c) 6. An (a) (b) (c) (d)
ionic bond (b) van der Waal's bond chemical bond (d) covalent bond electronic oscillator is : just like an alternator an amplifier with feedback nothing but an amplifier a.c. to d.c. energy converter
7. The current gain of transistor is 100, if the base current changes by 10 pA. What is the change in collector current ? (a) 0.2 mA (b) 2 mA (c) 1 mA (d) 0.5 mA 8. With the increase in temperature, the width of the forbidden gap will: (a) decrease (b) increase (c) remain same (d) become zero 9. The impurity added in germanium crystal to make n-type-semi-conductor is: (a) aluminium (b) gallium (c) iridium (d) phosphorus
13. Potential barrier developed in a junction diode opposes : (a) minority carries in both region only (b) majority carriers only (c) electrons in n-region (d) holes in p-region 14. Depletion layer consists of: (a) electrons (b) protons (c) mobile ions (d) immobile ions 15. Si and Cu are cooled to a temperature of 300 K, then resistivity: (a) for Si increases and for Cu decreases (b) for Cu increases and for Si decreases (c) decreases for both Si and Cu (d) increases for both Si and Cu 16. Packing fraction of simple cubic cell is : /
\
(a) / (c)x
n
2
(b)f
371
y
17. In tt-p-n transistor circuit, the collector current is 20 mA. If 80% of the electrons emitted reach the collector, the emitter current will be : (a) 9 mA (b) 11 mA (c) 12.5 mA (d) 0.1 mA