software for aluminium busbar sizing - thomas and rata
Calculation document which is useful to power quality engineers for calculation of capacitor size which is for automatic power factor correction panelFull description
Full description
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design and sizing wwtp waste water treatment
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control and relay panel specificationsFull description
INPUT DATA : Current Rating Required Nominal voltage Min. continuous operating voltage Frequency Altitude Fault level Fault Duration Ambient Temp. Final Temp Temp. Permissible final temp. at the end of fault
A V Vn f Alti Isc
Amp. Volt % of Nominal
Hz Mtr. Mt kA
tf
Sec.
Ta Tf Tend
ºC
H D BBmat
mm
ºC C ºC
Type of panel Installation Panel Busbar Enclosure Height (H) Panel Busbar Enclosure Depth (D) Busbar Material Grade of busbar No. of busbar run / phase B b Size Busbar Si
mm
BBgrade N BBsize
Nos.
S Sb
mm mm
at
mm
bt
mm
Ssupport Lbd
mm Mtr.
mm
All Busbars Are Busbar Insulating Material used Busbar spacing (refer figure) Distance between two busbar Total busbar width (refer figure) Total busbar height (refer figure) Busbar support interval Busbar length Minimum Shearing strength of Aluminium is
kg/ cm2
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3200 415 95 50 100 50 1 40 85 185 Indoor with Well Ventilated 500 1000 Aluminium D 50 S-WP 2 203.2 X 12.7 Without Interleaving PVC Sleeves 200 9.53 28.59 203.2 600 4.6 1500
a S
H
b=bt
D at Sb A
Minimum size of busbar for short circuit conditions
A Isc
k (1 20 )t t *100 100
A = area required in sq. mm. Isc = fault current in Amp. (rms) k = constant, 1.166 for Al./Al alloy, 0.52 for Cu. k = constant, 1.166 for Al./Al alloy, 0.52 for Cu. α20 = Temp. co‐efficient of resi. At 20 deg. Cen. t = fault clearing time in sec. θt = temp. rise of bus during fault in deg. Cen θ = operating temp of busbar in deg. Cen A A = B
sq. mm.
625.6 625 6
Derating factors A1 Derating factor due to ambient temp. A2 derating due to altitude A3 Derating factor due to grade of aluminium Ratio of enclosure area to busbar area A3 Derating factor due to size of enclosure
K1 K2 K3 K4
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0.945 1 1 0.03612896 0.8
(Table 28.3) (Table 30.6) (Table 28.6)
A4 Derating due to skin effect is considered in ampacity g p y Spacing Ratio A5 Derating due to proximity effect (considered above) A6 Derating due to black paint A7 Derating due to frequency variation
C
K5 S/at K6 K7 K8
1 7.0 0.99 1 1
Overall derating factor Actual current carrying capacity
Amp
Current density
Amp/sq.mm.
Voltage drop calculation Rdc at 20 deg cen Rdc at operating temp./per conductor
(Table 7, T & R)
0.75
Rdc20
3331
micro‐Ohm/mtr
0.645 11.12
Rdc Rdc 20 {1 20 (T f 20)} Rac
micro‐ Ohm/kM/phase
= Rdc x Kskin 0.0000115
D
E
y Proximity effect Voltage drop for busduct
Vd
Volts
Middl h Middle phase voltage drop lt d
Vd Vd'
% Volts V lt Volts
Calculation for short circuit effects
Fm
16* Isc 2 * k *104 N / mtr. S
Where,
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=Current x Impedance of b/b x length of b/b 1.60
0.4% =Current x Rac of b/b x length of b/b C t R f b/b l th f b/b 0.000177347
Fm = electrodynamic forces y Isc = rms value of fault current in ampere k = space factor for rectangular busbar force on each busbar section, insulatorm, fastners F
kg
1077.7
Mechanical suitability of busbar Mechanical suitability of busbar a
Bendingstressat sec tionx x
Fm * S supp ort 12* M * N
x b
Where, Wh Fm = electrodynamic forces Ssupport= C to C distance between two bus bar M = section modulus of each b/b at section x‐x = 1/6 a b 1/6 a b2 cm3 N = No. of busbar per phace Bending stress on the busbar at the time of fault is G
x
less
than allowable
TEMPERATURE RISE AT THE TIME OF FAULT 2
Isc X Sqrt(t)
[Antilog[ 3.41 x 10^4 x A
θfinal = =
θfinal =
](θ
40.3574
0.36
Deg. Cen. Temp. Rise
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