Question 1
This factor is not a component of a material
Processing
Crystallinity
Properties
Performance
Question 2
Substances in which measured properties are independent of the direction of measurement
Anisotropic
Bitropic
Isotropic
Multitropic
none of the above
Question 3
Which of the following has the highest resistance to fracture
Polymers
Ceramics
Metals
Composites
Question 4
!elate to the chemical reactivity of materials"
Mechanical
#lectrical
Thermal
none of the above
Question 3
Which of the following has the highest resistance to fracture
Polymers
Ceramics
Metals
Composites
Question 4
!elate to the chemical reactivity of materials"
Mechanical
#lectrical
Thermal
$eteriorative
Question 5
%ne basic classification of a material
Composite
Plastics
Alloys
Metals
Question 6
&"Tries &"Tries to create a new material with the desired properties based on an e'isting material with similar properties
Materials Scientist and #ngineers
Industrial #ngineer
Civil #ngineer
Chef
Question 7
$efined as the characteristic of a material that differentiate it from other materials" It is independent on its si(e and shape
Property of a Material
Structure of a Material
Process of a Material
Performance of a Material
none of the above
Question 8
This is not a property of a Material
Mechanical
#lectrical
)eat Transfer
%ptical
Question 9
Correct" What is the difference between atomic mass and atomic weight
Atomic mass is the average of the atomic masses of an atom*s naturally occurring isotopes+ whereas atomic weight is the weight of an individual atom"
Atomic mass is characteri(ed by the number of neutrons in the nucleus+ whereas atomic weight is the weight of an individual atom"
Atomic mass is the mass of an individual atom+ whereas atomic weight is the average ,weighted- of the atomic masses of an atom*s naturally occurring isotopes"
Atomic weight . Atomic mass / g"
Atomic mass is characteri(ed by the number of protons in the nucleus+ whereas atomic weight is the average ,weighted- of the atomic masses of an atom*s naturally occurring isotopes"
Question 10
Correct" The net potential energy between two ad0acent ions+ E N+ may be represented by
Where A, B, and n are constants whose values depend on the particular ionic system. Calculate the bonding energy E 1 in terms of the parameters A+ B+ and n using the following procedure2 (1) $ifferentiate E N with respect to r + and then set the resulting e'pression e3ual to (ero+ since the curve of E N versus r is a minimum at E 1" (2) Solve for r in terms of A+ B+ and n+ which yields r 1+ the e3uilibrium interionic spacing" (3) $etermine the e'pression for E 1 by substitution of r 1 into the above e3uation for E N" Which of the following e3uations represents the e'pression for E 1
Question 11
4our answer is correct" What type,s- of bonding would be e'pected for brass ,a copper5(inc alloy- Covalent bonding with some van der Waals bonding
Metallic bonding
van der Waals bonding
Ionic bonding
Question 12
Correct" The nucleus of an atom contains
#lectrons
6eutrons
Protons
Question 13
Correct"
The atomic number of an electrically neutral atom is e3ual to the number of2 Choose all that apply"
Protons
#lectrons
6eutrons
Question 14
Type of chemical bond formed through an electrostatic attraction between two oppositely charged ions
Metallic bond
Ionic bond
Covalent bond
Capillary bond
Question 15
Which atomic model is currently used to describe the wave particle duality of electrons
Bohr atomic model
!utherford*s model
7uantum theory
String theory
Question 16
At the state of e3uilibrium+ the repulsive force is e3ual to
The frictional force
The attractive force
The buoyant force
The resultant force
Question 17
Two atoms that are bonded with this bond will each contribute at least one electron to the bond+ and the shared electrons may be considered to belong to both atoms
Covalent bond
Metallic bond
Mechanical bond
Ionic bond
none of the above
Question 18
Correct" What is the difference between atomic structure and crystal structure
Atomic structure relates to the type of atomic bonding" Crystal structure pertains to the arrangement of atoms in the crystalline solid material"
Atomic structure relates to the number of electrons" Crystal structure pertains to the type of atomic bonding in the crystalline solid material"
Atomic structure relates to the arrangement of protons and neutrons in the nucleus of an atom" Crystal structure pertains to the electron structure of the individual atoms" Atomic structure relates to the number of protons and neutrons in the nucleus of an atom" Crystal structure pertains to the number and probability distributions of the electrons"
Atomic structure relates to the number of protons and neutrons in the nucleus of an atom+ as well as the number and probability distributions of the constituent electrons" Crystal structure pertains to the arrangement of atoms in the crystalline solid material" Question 19
Correct" Which crystal system,s- listed below has ,have- the following relationship for the unit cell edge lengths
%rthorhombic
Tetragonal
Monoclinic
)e'agonal
!hombohedral
Triclinic
Cubic
Question 20
Basic structural unit or building bloc8 of the crystal structure and defines the crystal structure by virtue of its geometry and the atom positions within
Building unit
Cubicle
Crystal cell
9nit cell
Question 21
)ow many atoms can be contained in an )e'agonal Closed Pac8 Structure
:
;
<
=
Question 22
4our answer is correct" A steel rod is pulled in tension with a stress that is less than the yield strength" The modulus of elasticity may be calculated as
A'ial load divided by change in length
A'ial stress divided by a'ial strain
A'ial stress divided by change in length
A'ial stress times a'ial strain
Question 23
Correct" >or most metals+ the relationship between elastic and shear moduli is appro'imately which of the following
G .
1"& E
G .
1": E
G .
1"? E
G .
1"; E
G .
1"@ E
Question 24
This law states that in the linear part of the stressstrain curve+ the slope of the linear part is e3ual to the 4oung*s Modulus
%hm*s aw
4oung*s aw
)oo8e*s aw
none of the above
Question 25
$efined as the ratio of lateral and a'ial strains
4oung*s !atio
Capacitive !atio
Poisson*s !atio
none of the above
Question 26
>orce or load per unit area of crosssection over which the force or load is acting
Stress
Strain
Tensile >orce
Shear >orce
none of the above
Question 27
In metals+ the stress level at which plastic deformation begins
inear Point
Plastic $eformation Point
>ailure Point
Proportional imit
none of the above
Question 28
The slope of the linear part of the stress-strain curve in t he elastic reion!
4oung*s Modulus
Tensile Modulus
Strain Modulus
none of the above
Question 29
This modulus may be thought of as stiffness+ or a material*s resistance to elastic deformation
%hm*s Modulus
4oung*s Modulus
Modulus of Inelasticity
none of the above
Question 30
This is the point in the stressstrain curve wherein brea8ing occurs
>racture
9ltimate Tensile Strength
Proportional imit
Brea89p Point
none of the above
Question 31
>or a parallel plate capacitor+ increasing the dielectric constant will increase the
oltage
!esistance
Inductance
Capacitance
none of the above
Question 32
If the voltage applied to a material is ::1 and the current passing through it is & ampere+ what is the resistance of the material
::": ohms
::1 ohms
:": ohms
1"@ ohms
none of the above
Question 33
This material property is indirectly proportional to conductivity
!esistance
!esistivity
Conductance
Capacitance
none of the above
Question 34
The unit of Capacitance is
%hms
>arad
olts
Amperes
none of the above
Question 35
aw that states that the voltage applied to the material is directly proportional to the current passing through the material
Capacitive aw
Mho*s aw
%hm*s aw
!esistive aw
none of the above
"o#ponent of $aterial
This factor is not a component of a material
Processing
Crystallinity
Properties
Performance
%ropert& of $aterial
This is not a property of a Material
Mechanical
#lectrical
)eat Transfer
%ptical
%ropert& of $aterial
Substances in which measured properties are independent of the direction of measurement
Anisotropic
Bitropic
Isotropic
Multitropic
none of the above
$aterials 'cience an nineerin
&"Tries to create a new material with the desired properties based on an e'isting material with similar properties
Materials Scientist and #ngineers
Industrial #ngineer
Civil #ngineer
Chef
"lassification of $aterials
%ne basic classification of a material
Composite
Plastics
Alloys
Metals
"lassification of $aterials
Which of the following has the highest resistance to fracture
Polymers
Ceramics
Metals
Composites
%ropert& of $aterial
!elate to the chemical reactivity of materials"
Mechanical
#lectrical
Thermal
$eteriorative
"haracteristics of $aterials
$efined as the characteristic of a material that differentiate it from other materials" It is independent on its si(e and shape
Property of a Material
Structure of a Material
Process of a Material
Performance of a Material
none of the above
*orces in +to#s
At the state of e3uilibrium+ the repulsive force is e3ual to
The frictional force
The attractive force
The buoyant force
The resultant force
+to#ic $oel
Which atomic model is currently used to describe the wave particle duality of electrons
Bohr atomic model
!utherford*s model
7uantum theory
String theory
T&pes of ,ons
Type of chemical bond formed through an electrostatic attraction between two oppositely charged ions
Metallic bond
Ionic bond
Covalent bond
Capillary bond
,ons in +to#s
Two atoms that are bonded with this bond will each contribute at least one electron to the bond+ and the shared electrons may be considered to belong to both atoms
Covalent bond
Metallic bond
Mechanical bond
Ionic bond
none of the above
+to#s in *"" 'tructure
)ow many atoms can be contained in an >CC structure
&
:
?
;
'tructure of *""
If the radius of a face centered cubic crystal is half the length of its unit cell edge+ then the relationship of the >CCs radius and edge length is
a.pi!D:
a.!
a.:"@!
6one'istent because the structure cannot be formed
none of the above
'tructure of ,""
If the radius of the body centered cubic crystal is S7!T,?- Angstrom ,A- then the unit edge is
:A
;A
?A
&
+to#s in e.aonal '&ste#s
)ow many atoms can be contained in an )e'agonal Closed Pac8 Structure
:
;
<
=
,asic ,uilin ,loc/ of "r&stal 'tructure
Basic structural unit or building bloc8 of the crystal structure and defines the crystal structure by virtue of its geometry and the atom positions within
Building unit
Cubicle
Crystal cell
9nit cell
e lenth an aius of the +to#
If the radius of a face centered cubic crystal is & Angstrom ,A-+ then the unit edge is
a.!D:
a.:
a.&
a.:S3rt,:-
$echanical %ropert&
In metals+ the stress level at which plastic deformation begins
inear Point
Plastic $eformation Point
>ailure Point
Proportional imit
none of the above
$echanical %ropert&
The slope of the linear part of the stressstrain curve in the elastic region"
4oung*s Modulus
Tensile Modulus
Strain Modulus
none of the above
$echanical %ropert&
This law states that in the linear part of the stressstrain curve+ the slope of the linear part is e3ual to the 4oung*s Modulus
%hm*s aw
4oung*s aw
)oo8e*s aw
none of the above
$echanical %ropert&
This is the point in the stressstrain curve wherein brea8ing occurs
>racture
9ltimate Tensile Strength
Proportional imit
Brea89p Point
none of the above
$echanical %ropert&
This modulus may be thought of as stiffness+ or a material*s resistance to elastic deformation
%hm*s Modulus
4oung*s Modulus
Modulus of Inelasticity
none of the above
$echanical %ropert&
>orce or load per unit area of crosssection over which the force or load is acting
Stress
Strain
Tensile >orce
Shear >orce
none of the above
$echanical %ropert&
$efined as the ratio of lateral and a'ial strains
4oung*s !atio
Capacitive !atio
Poisson*s !atio
none of the above
lectroche#ical "onsieration
!eaction in which the electrons from the anodic region is transferred and become part of another chemical species
%'idation
!eduction
#lectromigration
Superconduction
none of the above
.iation
This process will form nonmetallic films or scales in metals
%'idation
!eduction
#lectromigration
Superconduction
none of the above
lectroche#ical "onsieration
This process will result in the loss of electrons in metals
%'idation
!eduction
#lectromigration
Superconduction
none of the above
lectrical %roperties
This material property is indirectly proportional to conductivity
!esistance
!esistivity
Conductance
Capacitance
none of the above
lectrical %roperties
aw that states that the voltage applied to the material is directly proportional to the current passing through the material
Capacitive aw
Mho*s aw
%hm*s aw
!esistive aw
none of the above
h#s a
If the voltage applied to a material is ::1 and the current passing through it is & ampere+ what is the resistance of the material
::": ohms
::1 ohms
:": ohms
1"@ ohms
none of the above
"apacitance
The unit of Capacitance is
%hms
>arad
olts
Amperes
none of the above
"apacitance
>or a parallel plate capacitor+ increasing the dielectric constant will increase the
oltage
!esistance
Inductance
Capacitance
none of the above
Ther#al %ropert&
Stress induced in a body as a result of slow changes in temperature
Thermal Shoc8
Thermal Stress
Thermal annealing
Thermal Tempering
none of the above
Ther#al %ropert&
If the change in temperature of a certain & meter aluminum wire is &11 deg Celsius+ what is the change in its length ,Alpha . :?"< ' &1D
:?"< ' &1D; m
:?"< ' &1D; m
:"?< ' &1D; m
1":?< ' &1D; m
none of the above
Ther#al %ropert&
It represents the amount of energy re3uired to produce a unit temperature rise"
)eat Capacity
Calories
)eat
Foule
none of the above
$anetic %ropert&
This 8ind of magnetic field is wea8 and attracts towards the e'ternal magnetic field applied to the material
$iamagnetic
Paramagnetic
>errimagnetic
>erromagnetic
none of the above
$anetic %ropert&
This 8ind of magnetic field is strong and e'ists even without the presence of e'ternal magnetic field
Paramagnetic
>erromagnetic
$iamagnetic
none of the above
$anetic %ropert&
This 8ind of magnetic field is wea8 and opposes the e'ternal magnetic field applied to the material
$iamagnetic
Paramagnetic
>errimagnetic
>erromagnetic
none of the above
ner& of iht
If the fre3uency of the light source is &1 hert(+ the energy of the light is
<" ' &1D?? F
?"?? ' &1D< F
?"?? ' &1D? F
<" ' &1D?? F
ptical %roperties
$escribes how light propagates through a medium
!efractive Inde'
!eflective Inde'
Capacitance
Inde' of luminosity
none of the above
ptical %roperties
Phenomenon wherein the absorbed energy of the material is reemitted as visible light" The interval between absorption and reemission is greater than & second
uminiscence
Transluscence
Phosphorescence
Transparence
none of the above
ptical %roperties
Materials that are capable of transmitting light with relatively little absorption and reflection
Phosphorescent
Transparent
%pa3ue
>lourescent
none of the above
'pee of iht
If the wavelength of light is & ' &1D= m+ its fre3uency is
&E? m
?m
? hert(
&E? hert(
none of the above
7uestion &+ Part & A coppernic8el alloy of composition ;1 wtG 6i<1 wtG Cu is slowly heated from a temperature of &&@1HC ,:&11 H>-" ,a- At what temperature does the first li3uid phase form ,b- What is the composition of this li3uid phase ,c- At what temperature does complete melting of the alloy occur ,d- What is the composition of the last solid remaining prior to complete melting See Animated >igure "?a
Part 1
Carefully review Section "J and >igure "?" Thin8 about what happens to the composition given in the problem as you slowly heat it" What happens to this composition when it passes the solidus line If you are having difficulty with this problem+ you may wish to review2 Solving #3uations Kraphing Conceptual %verview At what temperature does the first li3uid phase form 9.11
LC
the tolerance is +/-2%
Question 2
4our answer is incorrect" >or an alloy of composition @1 wtG n@1 wtG Cu+ what phase,s- is ,are- present at ;11HC and what is ,are- the mass fraction,s- of the phase,s- 4ou may find the Animated >igure "& ,the Cun phase diagram- helpful"
β and γ phases
i3uid phase
β phase
β' and γ phases
α phase
Question 4
Incorrect" Which of the following 8inds of information may be determined with the aid of a phase diagram
The phase,s- present at a specified temperature and composition"
The fraction,s- of phase,s- present at specified temperature and composition"
The composition,s- of phase,s- present at a specified temperature and composition"
Question 5
Correct" A li3uidus line separates which of the following combinations of phase fields
i3uid N O and ON
O and i3uid N O
i3uid and i3uid N O
O and ON
Question 6
Incorrect" A solvus line separates which of the following pairs of phase fields
i3uid and i3uid N O
O and ON
O and i3uid N O
i3uid N O and ON
Question 7
4our answer is correct" >rom the list below+ select four situations in which casting is the preferred fabrication techni3ue" (1) >or
large pieces andEor complicated shapes
(2) >or
alloys having low ductilities
(3) When
the processing would be very precise
(4) When
mechanical strength is not an important consideration
(5) When
it is needed to 0oin a large variety of metals and a lloys
(6) When
it is the most economical fabrication techni3ue
(1)+ (2)+ (4)+ (6)
(1)+ (2)+ (4)+ (5)
(2)+ (3)+ (5)+ (6)
(2)+ (3)+ (4)+ (6)
(1)+ (3)+ (4)+ (5)
Question 8
Correct" >orging operations normally ta8e place at
!oom temperature
)igh temperatures
ow temperatures
Question 9
Correct" Which of the following are forming operations
$rawing
Powder metallurgy
Welding
Continuous casting
#'trusion
$ie casting
>orging
!olling
Question 10
4our answer is correct" Is it possible to grind up and reuse phenolformaldehyde
6o+ it is not possible"
4es+ it is possible"
Question 11
Incorrect" )ow does the electron structure of an isolated atom differ from that of a solid material +nser
An isolated atom has states"
an electron band structure " Solid materials have discrete electron energ
An isolated atom has discrete electron energ states " Solid materials have electron band structures "
Question 12
Correct" Which of nSe and KaAs has the larger band gap energy
KaAs
nSe
Question 13
Correct" Which type of charge carrier will be introduced into a semiconductor by the presence of an acceptor impurity
#lectron
)ole
Question 14
Correct" Which type of charge carrier will be introduced into a semiconductor by the presence of a donor impurity
)ole
#lectron
Question 15
Correct" >or a semiconductor+ when an electric field is applied+ in which direction are the holes accelerated
In the same direction as the electric field"
%pposite to the direction of the electric field"
Question 16
Correct" The electrical conductivity of an e'trinsic semiconductor is
characteristic of the highpurity material"
due to the presence of impurities"
Question 17
Correct" Are energies for electrons that participate in the conduction process ,i"e"+ free electrons- greater or less than the >ermi energy
ess than
Kreater than
Question 18
Correct" Are energies for holes greater or less than the >ermi energy
Kreater than
ess than
Question 19
Correct" An insulator has an energy band gap that is relatively
narrow"
wide"
Question 20
Correct" The electrical conductivity of an intrinsic semiconductor is
due to the presence of impurities"
characteristic of the highpurity material"
Question 21
Correct" )ow do the electrical conductivities of metals compare with those of semiconductors
QMetals R QSemiconductors
QMetals .QSemiconductors
QMetals QSemiconductors
Question 22
Correct" >or an ntype semiconductor+ which type of charge carrier is present in the greater concentration
#lectron
)ole
Question 23
Correct" >or an ntype semiconductor
Concentrationelectrons concentrationholes
Concentrationelectrons .Concentrationholes
Concentrationelectrons R Concentrationholes
Question 24
Correct" >or a !type semiconductor+ semiconductor+ which type of charge carrier is present in the greater concentration
#lectrons
)oles
Question 25
Correct" >or a !type semiconductor
Concentrationelectrons concentrationholes
Concentrationelectrons .Concentrationholes
Concentrationelectrons R Concentrationholes
Question 26
Correct" In order for a semiconductor to e'hibit e'trinsic electrical characteristics+ relatively high impurity concentrations are re3uired"
True
>alse
Question 27
Correct" A semiconductor has an energy band gap that is relatively
narrow"
wide"
Question 28
Correct" )ow does increasing temperature affect the concentration of both electrons and holes in an intrinsic semiconductor
May increase andEor decrease the concentration+ depending on the temperature range"
Increases the concentration"
$ecreases the concentration"
%ractice Question ,inar& utectic '&ste#s
Correct 9sing Animated >igure "=+ "=+ determine which of the phasesEphase combinations combinations listed below will be present for an alloy of composition ;< wtG Sn @; wtG Pb that is at e3uilibrium at ;;HC
li3uid
beta
beta N li3uid
alpha N beta N li3uid
alpha N beta
alpha
alpha N li3uid
%ractice Question ,inar& utectic '&ste#s
Correct 9sing the Animated >igure "=+ determine which of the phasesEphase combinations listed below will be present for an alloy of composition JJ wtG Sn :? wtG Pb that is at e3uilibrium at &1HC
beta N li3uid
alpha
alpha N li3uid
alpha N beta
alpha N beta N li3uid
beta
li3uid
%ractice Question evelop#ent of $icrostructure in utectic +llo&s
Correct 9sing the Animated >igure "=+ for an alloy of composition :@ wtG Sn J@ wtG Pb+ select the phase,s- present and their composition,s- at :11HC"
" .
:@ wtG Sn J@ wtG PbU α . :@ wtG Sn J@ wtG Pb
α .
&J wtG Sn =? wtG PbU β . @@"J wtG Sn ;;"? wtG P
O . &J wtG Sn =? wtG PbU " . @@"J wtG Sn ;;"? wtG Pb
α .
&="? wtG Sn =&"J wtG PbU β . J"= wtG Sn :": wtG Pb
%ractice Question utectoi eactions
Correct A eutectoid reaction involves which of the following phases
Three solid
Two li3uids and one solid
%ne li3uid and one solid
%ne li3uid and two solid
%role# 9!16
4our answer is correct" >or an alloy of composition @1 wtG n@1 wtG Cu+ what phase,s- is ,are- present at &111HC and what is ,are- the mass fraction,s- of the phase,s- 4ou may find the Animated >igure "& ,the Cun phase diagram- helpful"
β' and γ phases
α phase
β and γ phases
β phase
i3uid phase
Problem "J<
4our answer is correct" The mass fraction of eutectoid cementite in a h!er eutectoid ironcarbon alloy ,0ust below its eutectoid temperature- is 1"&1;" %n the basis of this information+ determine the composition of the alloy" If it is not possible to determine the composition from the information provided+ enter 1"
1.11003
%role# 9!77
4our answer is incorrect"
wtG C
The mass fraction of eutectoid ferrite in a h!oeutectoid ironcarbon alloy ,0ust below its eutectoid temperature- is 1"=@;" %n the basis of this information+ determine the composition of the alloy" If it is not possible to determine the composition from the information provided+ enter 1"
wtG C
0
'upple#ental Question utectoi reaction
Correct" A eutectoid reaction involves which of the following phases
%ne li3uid and one solid
%ne li3uid and two solid
Two li3uids and one solid
Three solid
'upple#ental Question iuius line
Correct" A li3uidus line separates which of the following combinations of phase fields
O and i3uid N O
O and ON
i3uid N O and ON
i3uid and i3uid N O
'upple#ental Question %eritectic reaction
Correct" A peritectic reaction involves which of the following combinations of phase fields
%ne li3uid and one solid
%ne li3uid and two solid
Two li3uids and one solid
Three solid
'upple#ental Question %hases present at eutectic point
Correct" At a eutectic point on a binary temperaturecomposition phase diagram+ how many phases are present when the system is at e3uilibrium
1
&
:
?
'upple#ental Question 'olvus line
Correct" A solvus line separates which of the following pairs of phase fields
i3uid and i3uid N O
O and i3uid N O
O and ON
i3uid N O and ON
#1 (take note, diferent values given) swerte i same given d2 kasi tama to :D
#3, di ko sure yung Part 2 & onwardssad
Problem 2.18
Correct" The net potential energy between two ad0acent ions+ E N+ may be represented by
Where A, B, and n are constants whose values depend on the particular ionic system. Calculate the bonding energy E 1 in terms of the parameters A+ B+ and n using the following procedure2 (1) $ifferentiate E N with respect to r + and then set the resulting e'pression e3ual to (ero+ since the curve of E N versus r is a minimum at E 1" (2) Solve for r in terms of A+ B+ and n+ which yields r 1+ the e3uilibrium interionic spacing" (3) $etermine the e'pression for E 1 by substitution of r 1 into the above e3uation for E N" Which of the following e3uations represents the e'pression for E 1
Problem <":; ,K% MultistepA cylindrical rod &11 mm long and having a diameter of &1"1 mm is to be deformed using a tensile load of :J+@11 6" It must not e'perience either plastic deformation or a diameter reduction of more than J"@/&1? mm" %f the materials listed as follows+ which are possible candidates Fustify your choice,s-" Material
Modulus of Elasticity(GPa)
Yield Strength (MPa)
Poisson's Ratio
#$
2$$
$&&
Brass allo
'$'
&$$
$&(
Steel allo
2$#
($$
$&$
)itanium allo
'$#
*$
$&(
Aluminum allo
Part 1
#'cellent What is the stress in MPa in the cylindrical rod
,
.
350
MPa
Problem <":; ,K% MultistepA cylindrical rod &11 mm long and having a diameter of &1"1 mm is to be deformed using a tensile load of :J+@11 6" It must not e'perience either plastic deformation or a diameter reduction of more than J"@/&1? mm" %f the materials listed as follows+ which are possible candidates Fustify your choice,s-" Material
Modulus of Elasticity(GPa)
Yield Strength (MPa)
Poisson's Ratio
#$
2$$
$&&
Brass allo
'$'
&$$
$&(
Steel allo
2$#
($$
$&$
)itanium allo
'$#
*$
$&(
Aluminum allo
Part 2
Well done Which materials would be acceptable for this design based upon the answer to Step %ne ,Select all materials that are acceptable"-
steel alloy
titanium alloy
aluminum alloy
brass alloy
Problem <":; ,K% MultistepA cylindrical rod &11 mm long and having a diameter of &1"1 mm is to be deformed using a tensile load of :J+@11 6" It must not e'perience either plastic deformation or a diameter reduction of more than J"@/&1? mm" %f the materials listed as follows+ which are possible candidates Fustify your choice,s-" Material
Modulus of Elasticity(GPa)
Yield Strength (MPa)
Poisson's Ratio
#$
2$$
$&&
Brass allo
'$'
&$$
$&(
Steel allo
2$#
($$
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Aluminum allo
)itanium allo
'$#
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Part 3
#'cellent Calculate the change in diameter+ Vd + in mm+ for each of the alloys the meet the first design criterion as determined in Steps & and :" What is Vd + in mm+ for the2 a) steel alloy ) titanium alloy
a)
Vd .
)
Vd .
-0.0051
mm
-0.0111
mm
Problem <":; ,K% MultistepA cylindrical rod &11 mm long and having a diameter of &1"1 mm is to be deformed using a tensile load of :J+@11 6" It must not e'perience either plastic deformation or a diameter reduction of more than J"@/&1? mm" %f the materials listed as follows+ which are possible candidates Fustify your choice,s-" Material
Modulus of Elasticity(GPa)
Yield Strength (MPa)
Poisson's Ratio
#$
2$$
$&&
Brass allo
'$'
&$$
$&(
Steel allo
2$#
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)itanium allo
'$#
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Aluminum allo
Part 4
#'cellent Which of the steel and titanium alloys also meets the second criterion
neither alloy
both alloys
steel alloy
titanium alloy
%role# 19!13
Correct" To what temperature ,in HC- must a cylindrical rod of one metal &1"1=: mm in diameter and a plate of second metal having a circular hole "=@ mm in diameter have to be heated for the rod to 0ust fit into the hole Assume that the initial temperature is :;HC and that the linear e'pansion coefficient values for metals one and two are ;"= ' &1< ,HC-& and &= ' &1< ,HC-&+ respectively" 762.561
HC
Question 3: %art 1
$etermine the relative amounts ,in terms of volume fractions- for a &@ wtG Sn=@ wtG Pb alloy at &11HC" The densities of tin and lead at &11HC are given as follows2
Sn .
J": gEcm?
Pb .
&&":J gEcm?
4ou 4ou may also want to use Animated >igure "=" "="
%art 1
4our answer is correct" What phase,s- is,are- present for an alloy of this composition See Animated >igure "=
alpha N li3uid phases
beta phase
beta N li3uid phases
li3uid phase
alpha phase
alpha N beta phases
Question 4
Correct" Which of the following 8inds of information may be determined with the aid of a phase diagram
The fraction,s- of phase,s- present at specified temperature and composition"
The phase,s- present at a specified temperature and composition"
The composition,s- of phase,s- present at a specified temperature and composition"
Question 5
Correct" A li3uidus line separates which of the following combinations of phase fields
O and ON
i3uid N O and ON
i3uid and i3uid N O
O and i3uid N O
Question 6
Correct" A solvus line separates which of the following pairs of phase fields
i3uid and i3uid N O
i3uid N O and ON
O and i3uid N O
O and ON
Question 7
4our answer is correct" >rom the list below+ select four situations in which casting is the preferred fabrication techni3ue" (1) When (2) >or
the processing would be very precise
large pieces andEor complicated shapes
(3) When
mechanical strength is not an important consideration
(4) >or
metals having high melting temperatures
(5) >or
alloys having low ductilities
(6) When
it is the most economical fabrication techni3ue
(2)+ (3)+ (5)+ (6)
(1)+ (2)+ (4)+ (6)
(1)+ (3)+ (4)+ (5)
(2)+ (3)+ (4)+ (6)
(1)+ (2)+ (4)+ (5)
Question 8
Correct" >orging operations normally ta8e place at
)igh temperatures
!oom temperature
ow temperatures
Question 9
Correct" Which of the following are forming operations
Welding
#'trusion
Continuous casting
!olling
$rawing
$ie casting
Powder metallurgy
>orging
Question 10
4our answer is correct" Is it possible to grind up and reuse phenolformaldehyde
4es+ it is possible"
6o+ it is not possible"
Question 11
Correct" )ow does the electron structure of an isolated atom differ from that of a solid material +nser
An isolated atom has states"
an electron band structure " Solid materials have discrete electron energ
An isolated atom has discrete electron energ states " Solid materials have electron band structures "
Question 12
Correct" Which of nSe and CdTe has the larger band gap energy
nSe
CdTe
Question 13
Correct" Which type of charge carrier will be introduced into a semiconductor by the presence of an acceptor impurity
#lectron
)ole
Question 14
Correct" Which type of charge carrier will be introduced into a semiconductor by the presence of a donor impurity
)ole
#lectron
Question 15
Correct" >or a semiconductor+ when an electric field is applied+ in which direction are the holes accelerated
%pposite to the direction of the electric field"
In the same direction as the electric field"
Question 16
Correct" The electrical conductivity of an e'trinsic semiconductor is
due to the presence of impurities"
characteristic of the highpurity material"
Question 17
Correct" Are energies for electrons that participate in the conduction process ,i"e"+ free electrons- greater or less than the >ermi energy
Kreater than
ess than
Question 18
Correct" Are energies for holes greater or less than the >ermi energy
Kreater than
ess than
Question 19
Correct" An insulator has an energy band gap that is relatively
wide"
narrow"
Question 20
Correct" The electrical conductivity of an intrinsic semiconductor is
characteristic of the highpurity material"
due to the presence of impurities"
Question 21
Correct" )ow do the electrical conductivities of metals compare with those of semiconductors
QMetals R QSemiconductors
QMetals .QSemiconductors
QMetals QSemiconductors
Question 22
Correct" >or an ntype semiconductor+ which type of charge carrier is present in the greater concentration
)ole
#lectron
Question 23
Correct" >or an ntype semiconductor
Concentrationelectrons concentrationholes
Concentrationelectrons .Concentrationholes
Concentrationelectrons R Concentrationholes
Question 24
Correct" >or a !type semiconductor+ which type of charge carrier is present in the greater concentration
#lectrons
)oles
Question 25
Correct" >or a !type semiconductor
Concentrationelectrons concentrationholes
Concentrationelectrons .Concentrationholes
Concentrationelectrons R Concentrationholes
Question 26
Correct" In order for a semiconductor to e'hibit e'trinsic electrical characteristics+ relatively high impurity concentrations are re3uired"
True
>alse
Question 27
Correct" A semiconductor has an energy band gap that is relatively
wide"
narrow"
Question 28
Correct" )ow does increasing temperature affect the concentration of both electrons and holes in an intrinsic semiconductor
May increase andEor decrease the concentration+ depending on the temperature range"
Increases the concentration"
$ecreases the concentration"
Question 1
Correct 9sing Animated >igure "=+ determine which of the phasesEphase combinations listed below will be present for an alloy of composition ;< wtG Sn @; wtG Pb that is at e3uilibrium at ;;HC
alpha N beta
li3uid
alpha N beta N li3uid
alpha
beta
alpha N li3uid
beta N li3uid
Question 2
Correct 9sing the Animated >igure "=+ determine which of the phasesEphase combinations listed below will be present for an alloy of composition JJ wtG Sn :? wtG Pb that is at e3uilibrium at &1HC
alpha N li3uid
li3uid
alpha N beta N li3uid
alpha
beta N li3uid
alpha N beta
beta
Question 3
Correct 9sing the Animated >igure "=+ for an alloy of composition :@ wtG Sn J@ wtG Pb+ select the phase,s- present and their composition,s- at :11HC"
α .
&="? wtG Sn =&"J wtG PbU β . J"= wtG Sn :": wtG Pb
α .
&J wtG Sn =? wtG PbU β . @@"J wtG Sn ;;"? wtG P
O . &J wtG Sn =? wtG PbU " . @@"J wtG Sn ;;"? wtG Pb
" .
:@ wtG Sn J@ wtG PbU α . :@ wtG Sn J@ wtG Pb
Question 4
Correct A eutectoid reaction involves which of the following phases
Two li3uids and one solid
%ne li3uid and two solid
Three solid
%ne li3uid and one solid
Question 5
4our answer is correct" >or an alloy of composition @1 wtG n@1 wtG Cu+ what phase,s- is ,are- present at &111HC and what is ,are- the mass fraction,s- of the phase,s- 4ou may find the Animated >igure "& ,the Cun phase diagram- helpful"
β and γ phases
β' and γ phases
i3uid phase
α phase
β phase
Question 5
4our answer is correct" >or an alloy of composition @1 wtG n@1 wtG Cu+ what phase,s- is ,are- present at &111HC and what is ,are- the mass fraction,s- of the phase,s- 4ou may find the Animated >igure "& ,the Cun phase diagram- helpful"
β and γ phases
β' and γ phases
i3uid phase
α phase
β phase
7uestion =
4our answer is correct" The mass fraction of eutectoid cementite in a h!er eutectoid ironcarbon alloy ,0ust below its eutectoid temperature- is 1"&11" %n the basis of this information+ determine the composition of the alloy" If it is not possible to determine the composition from the information provided+ enter 1"
wtG C
1.32502
Question 9
4our answer is incorrect" The mass fraction of eutectoid ferrite in a h!er eutectoid ironcarbon alloy ,0ust below its eutectoid temperature- is 1"=@=" %n the basis of this information+ determine the composition of the alloy" If it is not possible to determine the composition from the information provided+ enter 1"
wtG C
0.7338
Question 10
Correct" A eutectoid reaction involves which of the following phases
%ne li3uid and one solid
%ne li3uid and two solid
Two li3uids and one solid
Three solid
Question 11
Correct" A li3uidus line separates which of the following combinations of phase fields
O and ON
i3uid and i3uid N O
i3uid N O and ON
O and i3uid N O
Question 12
Incorrect" A peritectic reaction involves which of the following combinations of phase fields
%ne li3uid and one solid
%ne li3uid and two solid
Two li3uids and one solid
Three solid
Question 13
Correct" At a eutectic point on a binary temperaturecomposition phase diagram+ how many phases are present when the system is at e3uilibrium
1
&
:
?
Question 14
Correct" A solvus line separates which of the following pairs of phase fields
i3uid and i3uid N O
O and ON
i3uid N O and ON
O and i3uid N O
"o#ponent of $aterial
This factor is not a component of a material
Processing
Crystallinity
Properties
Performance
%ropert& of $aterial
This is not a property of a Material
Mechanical
#lectrical
)eat Transfer
%ptical
%ropert& of $aterial
Substances in which measured properties are independent of the direction of measurement
Anisotropic
Bitropic
Isotropic
Multitropic
none of the above
$aterials 'cience an nineerin
&"Tries to create a new material with the desired properties based on an e'isting material with similar properties
Materials Scientist and #ngineers
Industrial #ngineer
Civil #ngineer
Chef
"lassification of $aterials
%ne basic classification of a material
Composite
Plastics
Alloys
Metals
"lassification of $aterials
Which of the following has the highest resistance to fracture
Polymers
Ceramics
Metals
Composites
%ropert& of $aterial
!elate to the chemical reactivity of materials"
Mechanical
#lectrical
Thermal
$eteriorative
"haracteristics of $aterials
$efined as the characteristic of a material that differentiate it from other materials" It is independent on its si(e and shape
Property of a Material
Structure of a Material
Process of a Material
Performance of a Material
none of the above
*orces in +to#s
At the state of e3uilibrium+ the repulsive force is e3ual to
The frictional force
The attractive force
The buoyant force
The resultant force
+to#ic $oel
Which atomic model is currently used to describe the wave particle duality of electrons
Bohr atomic model
!utherford*s model
7uantum theory
String theory
T&pes of ,ons
Type of chemical bond formed through an electrostatic attraction between two oppositely charged ions
Metallic bond
Ionic bond
Covalent bond
Capillary bond
,ons in +to#s
Two atoms that are bonded with this bond will each contribute at least one electron to the bond+ and the shared electrons may be considered to belong to both atoms
Covalent bond
Metallic bond
Mechanical bond
Ionic bond
none of the above
+to#s in *"" 'tructure
)ow many atoms can be contained in an >CC structure
&
:
?
;
'tructure of *""
If the radius of a face centered cubic crystal is half the length of its unit cell edge+ then the relationship of the >CCs radius and edge length is
a.pi!D:
a.!
a.:"@!
6one'istent because the structure cannot be formed
none of the above
'tructure of ,""
If the radius of the body centered cubic crystal is S7!T,?- Angstrom ,A- then the unit edge is
:A
;A
?A
&
+to#s in e.aonal '&ste#s
)ow many atoms can be contained in an )e'agonal Closed Pac8 Structure
:
;
<
=
,asic ,uilin ,loc/ of "r&stal 'tructure
Basic structural unit or building bloc8 of the crystal structure and defines the crystal structure by virtue of its geometry and the atom positions within
Building unit
Cubicle
Crystal cell
9nit cell
e lenth an aius of the +to#
If the radius of a face centered cubic crystal is & Angstrom ,A-+ then the unit edge is
a.!D:
a.:
a.&
a.:S3rt,:-
$echanical %ropert&
In metals+ the stress level at which plastic deformation begins
inear Point
Plastic $eformation Point
>ailure Point
Proportional imit
none of the above
$echanical %ropert&
The slope of the linear part of the stressstrain curve in the elastic region"
4oung*s Modulus
Tensile Modulus
Strain Modulus
none of the above
$echanical %ropert&
This law states that in the linear part of the stressstrain curve+ the slope of the linear part is e3ual to the 4oung*s Modulus
%hm*s aw
4oung*s aw
)oo8e*s aw
none of the above
$echanical %ropert&
This is the point in the stressstrain curve wherein brea8ing occurs
>racture
9ltimate Tensile Strength
Proportional imit
Brea89p Point
none of the above
$echanical %ropert&
This modulus may be thought of as stiffness+ or a material*s resistance to elastic deformation
%hm*s Modulus
4oung*s Modulus
Modulus of Inelasticity
none of the above
$echanical %ropert&
>orce or load per unit area of crosssection over which the force or load is acting
Stress
Strain
Tensile >orce
Shear >orce
none of the above
$echanical %ropert&
$efined as the ratio of lateral and a'ial strains
4oung*s !atio
Capacitive !atio
Poisson*s !atio
none of the above
lectroche#ical "onsieration
!eaction in which the electrons from the anodic region is transferred and become part of another chemical species
%'idation
!eduction
#lectromigration
Superconduction
none of the above
.iation
This process will form nonmetallic films or scales in metals
%'idation
!eduction
#lectromigration
Superconduction
none of the above
lectroche#ical "onsieration
This process will result in the loss of electrons in metals
%'idation
!eduction
#lectromigration
Superconduction
none of the above
lectrical %roperties
This material property is indirectly proportional to conductivity
!esistance
!esistivity
Conductance
Capacitance
none of the above
lectrical %roperties
aw that states that the voltage applied to the material is directly proportional to the current passing through the material
Capacitive aw
Mho*s aw
%hm*s aw
!esistive aw
none of the above
h#s a
If the voltage applied to a material is ::1 and the current passing through it is & ampere+ what is the resistance of the material
::": ohms
::1 ohms
:": ohms
1"@ ohms
none of the above
"apacitance
The unit of Capacitance is
%hms
>arad
olts
Amperes
none of the above
"apacitance
>or a parallel plate capacitor+ increasing the dielectric constant will increase the
oltage
!esistance
Inductance
Capacitance
none of the above
Ther#al %ropert&
Stress induced in a body as a result of slow changes in temperature
Thermal Shoc8
Thermal Stress
Thermal annealing
Thermal Tempering
none of the above
Ther#al %ropert&
If the change in temperature of a certain & meter aluminum wire is &11 deg Celsius+ what is the change in its length ,Alpha . :?"< ' &1D
:?"< ' &1D; m
:?"< ' &1D; m
:"?< ' &1D; m
1":?< ' &1D; m
none of the above
Ther#al %ropert&
It represents the amount of energy re3uired to produce a unit temperature rise"
)eat Capacity
Calories
)eat
Foule
none of the above
$anetic %ropert&
This 8ind of magnetic field is wea8 and attracts towards the e'ternal magnetic field applied to the material
$iamagnetic
Paramagnetic
>errimagnetic
>erromagnetic
none of the above
$anetic %ropert&
This 8ind of magnetic field is strong and e'ists even without the presence of e'ternal magnetic field
Paramagnetic
>erromagnetic
$iamagnetic
none of the above
$anetic %ropert&
This 8ind of magnetic field is wea8 and opposes the e'ternal magnetic field applied to the material
$iamagnetic
Paramagnetic
>errimagnetic
>erromagnetic
none of the above
ner& of iht
If the fre3uency of the light source is &1 hert(+ the energy of the light is
<" ' &1D?? F
?"?? ' &1D< F
?"?? ' &1D? F
<" ' &1D?? F
ptical %roperties
$escribes how light propagates through a medium
!efractive Inde'
!eflective Inde'
Capacitance
Inde' of luminosity
none of the above
ptical %roperties
Phenomenon wherein the absorbed energy of the material is reemitted as visible light" The interval between absorption and reemission is greater than & second
uminiscence
Transluscence
Phosphorescence
Transparence
none of the above
ptical %roperties
Materials that are capable of transmitting light with relatively little absorption and reflection
Phosphorescent
Transparent
%pa3ue
>lourescent
none of the above
'pee of iht
If the wavelength of light is & ' &1D= m+ its fre3uency is
&E? m
?m