Sentaurus TCAD Training for CMOS Application (Synopsys_2009) _ OCR

4/2/2009

Sentaurus TCAD Training for CMOS Application

synopsys~ Predictable Success

Section 1. Course Outline • Sentaurus TeAD Overview • Sentaurus Workbench • Sentaurus Process 10 & 20 • Tecplot SV • Sentaurus Structure Editor - Building Meshes • Sentaurus Device I-V simulation • Inspect

synopsys' Predictable Success

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Section 2. Course Outline • 20/30 Sentaurus Structure Editor • Ligament introduction • C-V Device Simulation • Breakdown Device Simulation • 90nm nMOSFET Exercise • pMOSFET Device Exercise • SolvNet Resources • SolvNet Introduction • 2D Strained Silicon 45nm CMOS Reference Flow Demo • 3D nMOSFET Demo


) I


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reAD: What's it used for?

• TCAD is used to develop and semiconductor technologies • Designers focus on the chip • TCAD users focus on the transistor!


Putting Simulation to Work

You can learn to fly a jet by actually flying one at great expense and risk

Or you can use a flight simulator at a fraction of the price and a lot less risk I!!


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Simulating Semiconductor Manufacturing

• With TeAD, engineers simulate the process fabrication flow and resulting electrical behavior

Process

De,,«

Gate oxide 3nm Poly gate deposition Gate formation 100 nm gate length Halo implant BF 2 , 40 keY, 8e12, 35 deg, quad SID extension As, 5 keY, 5e14, 0 deg SID extension anneal 1050 degC, 3 s

Vth, lon, loft....... .

00: substrate


TCAD Application Areas Opto

'LED, LASER 'Image sensor ·Photodetector ·Solar cell

RF 'High-speed device ·Compound semiconductor Emitter


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and many types of customers 10M

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Research/University

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Foundry • TCAD, R&D,Tech; Dev., Production • Process; Device, Interconnect, TFM, C&E

Military/Government • Research Labs, Government Agencies • Device, Process, Interconnect, C&E

Fabless • Foundry Interface; Device Modeling, Library Development • Interconnect, Device, Process c

synopsys' Predktable Success

Sentaurus Product Family • Flexible Framework Environment • Advanced Visualization

• 20/30 Process Simulation • Calibration Library • Structure Editor Interface

• 20/30 Oevice Simulation • Structure Editor and Mesher • Application Specific Options

• Process Compact Models • Based on Calibrated Flow • Links Process Variation and Device Performance

Integrated TCAD Flow from Development to Manufacturing


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Benefits of Using TCAD



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The MOSFET is Getting a Face Lift! Gate insulator ·Si02/HiK • Leakage • Trapping

Gate • Work function Channel • Depletion • Mobility

Raised SID • Material • Activation • Diffusion

SID extension • Activation • Junction (USJ)

interface

STI • Stress

Device Scaling = More Simulation Needed


Strained Silicon

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Stress (MPa) Behavior of various models for high stress, Experimental data from L Shifren ot aI, Appl, Phys, Lett., vol, 85, pp, 6188-6190, 2004,


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Atomistic Effects

10' 0.2

Electron Density in Sen taurus Device

Discrete Dopant Distributions

0.4 0.6 0.8 Gate Voltage (V)

Statisticallds-Vgs

• Physical basis for simulating emerging effects: • Random Doping Fluctuation (RDF) • Line Edge Roughness (LER)


SON OS Device Structure Silicon Nitride -

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2D Mesh Generation • 2301 vertices


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Image Sensor Pixel Microlens

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• 3D to 2D cut to see the buried photodiode


Omega FinFET Sentaurus Device simulation using Quantum Transport Model Omega FinFET with electron current streamlines

Electron concentration at center of the channel Red: > 1019 cm-3 Blue: < 1018 cm- 3

Run-time statistics: 13000 nodes Single-carrier quantum transport 95 CPU minutes < 1 GB RAM


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Framework - SWB • Provides a GUI-based simulation environment • Organizes simulation projects, runs and results • Allows large Design of Experiment (DOE) and statistical analysis • Manages job scheduling & network computing • Enables interactive visualization and analysis of simulation results


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reAD Product Architecture Sentaurus Device

Sentaurus Device Editor

Sentarus Workbench

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Process Simulation

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• Models wafer fabrication steps

•

•

Implantation, diffusion, oxidation & lithography models are calibrated and highly predictive

•

Etching and deposition are typically modeled geometrically

TCAD process flow editor

Starts from flow description and layout

oo.sut6-trille

90nm nFET


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IStructure Editor 3D Emulation •

From layout and geometrical photo, etch, & deposition to generate 3D structure.

20 and 3D iterative editor •

Intuitive user interface

•

Interactive scripting record GUI actions type/paste script command easy to debug


Device Simulation •

Models the electrical, optical, mechanical & magnetic behavior of r'~ semiconductor devices • Simulation is typically performed on structures created by process simulation • Modes of simulation

Simulated current density and flow lines in 100nm device

• Static, time-dependent, large and small signal frequency dependent and noise modeling

Highly accurate CAD models can be extracted from device simulation results "./

Simulated electrical characteristics


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PCM Studio PCM acts as a link between the Yield Management System (YMS) and TCAD

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• Visualization of experimental data • Visualization of process-device relations • Algorithmic analysis • •

Reverse analysis Feed-forward analysis Process Window analysis

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• Calibration • Process analysis and optimization • Difficult simulation types, such as 3D, full-chip, SEU/SER, ESD Customer specific technology templates • Customer specific training and know-how transfer • Model development and integration • Software integration: TCAD FabLink • Dedicated engineering projects


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Synopsys reAD

synopsys" Predictable Success


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Node Information

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Basic Operation • Attach 1 Detach folders • Copy 1 Delete projects • Clean up 1 Pre-process 1 Select nodes / Run projects 1 Abort projects • View Output Results • Export (tar) 1 Import (tar) projects



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Outline • Sentaurus TCAO coordinate systems • Script file setup sequence • 10 example • 20 example • Implement external variable on Sentaurus Workbench


Sentaurus TCAD Coordinate Systems (default setting) SProcess

Tecplot, SDE, SDevice

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Coordinates in 3D Simulation CCJxdinates

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Script File Setup Sequence • Setup initial mesh • Define initial simulation domain • Initialize simulation & define substrate condition • Setup process flow • Oxidation / Deposition / Etching / Implantation / Annealing • Rebuild mesh at appropriate steps

• Define electrodes • Save full structure • Extract parameters


1D Example • Copy project "1 D_SProcess" from training_library • Refer to the command file of example "1 D_ SProcess" • Check 1D doping profile by INSPECT • Output file introduction


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Reference: SProcess, p34 - Oxide Thickness • Meauring oxide thickness: Integral Boron Concentration

Select z=Boron layers

{ Top

Bottom

Integral

Material}

{-6.43e-03 4.11 e-03

1.54e+09

Oxide}

{ 4.11 e-03

1.98e+11

Silicon}

2.00e+OO

• final oxide thickness is 4.11 nm + 6.43 nm = 10.54 nm

,

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synopsys'

I

I

Predictable Success

Reference: SProcess, p734 I p672 I p741 I p775 I p98 - select I layers I SetPlxList I WritePlx I Datasets • Select • Selects the plot variable for the postprocessing routines

• Layers • Prints material interfaces and integrated data field values

• SetPlxList • Sets a list of solution and term names to be passed to WritePlx command

• WritePlx • Writes a 10 pix file.

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2D Example • Copy project "20_SProcess" from training_library • Refer to the command file of "20 SProcess"


2D Example Process Flow


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2D Example Mesh Setting

Extract Parameters I

I

I

Ygox (X coordinate of oxide/silicon interface) Ypol (X coordinate of POLY/oxide interface) Tox (gate oxide thickness) = Ygox-Ypol Lgeff (effective channel length) = 2*Xgd Xj (Source/Drain junction depth) Ocp,["t"}COil:.e!lll
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c=J synopsys' Predictable Success

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Implement External Variables on SWB • copy 2D_ SProcess > clean up > add parameters> modify command file> clear up & renumber the experiment tree

IAdd external parameters on workbench I


Implement External Variables on SWB • copy 2D _ SProcess > clean up > add parameters> modify command file> clear up & renumber the experiment tree

Link external variables to internal variables #--- set variable --------------------setlgate 0.18 set ymax [expr $/gateI2+0.4] set HaloDose 1e13 set HaloEnergy 15

#--- set variable --------------------set Igate @Igate@ set ymax @@ set HaloDose @HaloDose@ set HaloEnergy @HaloEnergy@


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2D Example • Copy project "20_SProcess" from training_library • Refer to the command file of "20 SProcess" • Run & check extracted variables • User exercise: Add the SWB variables & change code accordingly


Reference: SProcess, p453 ; SWB, p160 I p95 • Advanced Calibration • calibrated to deep-submicron CMOS & SOl technology • power devices or SiGe devices, may require simpler or additional diffusion models, which are not yet included in the Advanced Calibration

• # - command • #set : Sets the value of

• Extracted variables • puts "DOE: "


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Tecplot SV Overview

• Tecplot SV is software for scientific visualization. • Extended by Synopsys to accommodate the special requirements.

synopsys' PredldableSuccess

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Specify Equations • Use the Specify Equations dialog to alter data in existing zones_ Data> Alter> Specify Equations __ . • The dialog allows you to change the values of entire variables or specific data points_ • You can also use the dialog to create new variables_


Generating 1D Cuts • One-dimensional cuts can be made along either the x or y coordinate axes. Slicer >Orthogonal Cut Normal Direction:

.... X

vV

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Number of Cuts:: First Cut At

Last Cut At

• Merga Zones in Cut ...., Cut Zone By Zone ~~:

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synopsys' PredictableSucces$

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Exporting 1 D Cuts to Inspect • Select the frame that includes the cuts to be exported. File> Export> Inspect Graph ... :t ;.\-.. -c-.~ . ..::-~

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• Select Data> Alter> Specify Equations ...


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Ex 1. Plot 1 D Band Structure (2/7) Set as follows (The unit is necessary.): { Ef }

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ConductionBandEnergy DonorConcentratlon [cn DoplngConcenlration (c EleclrostatlcPotential

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.. Merge Zones In Cut v Cut Zone By Zone


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Ex 1. Plot 1 D Band Structure (4/7) • Keep pressing control key, and select ConductionBandEnergy and ValenceBandEnergy.

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Ex 1. Plot 1D Band Structure (5/7) • 10 band structure.

'1.

Cut at X=Oum

PolySili~?n.r·

Silicon


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Ex 1. Plot 10 Band Structure (6/7) • Select the slice frame, and press File>Export>lnspect graph ... __

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Manual Introduction (refer to Tecplot-SV manual) • Getting started • Starting Tecplot • Main T ecplot window • Loading files

• Synopsys sidebar • 20/30 Mode • XY Mode • Native Tecplot

• Generating cuts

synopsy~r Predictable Success

User Exercise • Load Sprocess_2D example • Load 3D example • Perform the x-cut

For doing 3D cut, go to slicer => orthogonal cut (Y-normal direction), select 3 cuts with default end points


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Outline • Mesh strategy of MOSFET device simulation • GUI operation on interactive mode • Script a command file for batch mode

[Screen Res should be set to 1024x870 to accommodate External Profile Placement Dialog Box]


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Flow of Input and Output in SDE Intput: Mesh Strategy

Intput: Device Structure from SProcess

}

Output: structure, doping, mesh

Output: Runtime messages


MOSFET Mesh Setup Strategy (for SDevice Simulation) • Load boundary from previous SProcess output • Define initial mesh for Silicon and PolySilicon materials

o

• Refine Source/Drain junction mesh • Refine LDD junction mesh • Refine silicon surface region between channel to SID contact

0.5

• Define gate oxide mesh • Refine channel mesh • Refine PolySilicon mesh • Load doping profile from previous SProcess output • Define PolyGate (PolySilicon) doping

o

0.5


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MOSFET Mesh Setup Result (for SDevice Simulation)

E

2-

>-

Batch Mode • Refer to command file "sde_dvs.cmd" of example 0.18um nMOS • Check output files

synopsys' PredictableSuccess

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Interactive Mode • • • • • •

Start Structure Editor => type "sde" Journal on => record the command line of each step Import boundary file from n4_bnd.tdr Load sub mesh (geometry and doping data) from n4_fps.tdr turn off "auto region name", turn on "exact coordinates" Step by step setup mesh by GUI Silicon Poly SO' LOO • CtoC Gox Channel • Gate

=> => => => => => => =>

(0.1, 0.1) / (0.05, 0.1) (0.02, 0.05) / (0.01, 0.025) (0.09, 0.0) / (0.49, 0.3) => (0.1, 0.03) / (0.006, 0.006) (0.05, 0.0) / (0.09, 0.05) => (0.006, 0.006) / (0.005, 0.005) (0.09, -0.002) / (0.49, 0.006) => (99, 0.002) / (66, 0.001) (0.0, -0.002681) / (0.09, 0.00065) => (99, 4e-4) / (66, 4e-4) (0.0, 0.00065) / (0.09, 0.075) => (0.02, 0.05) / (0.01, 2e-4) / (-1.45, 1.45) (0.0, -0.18) / (0.09, -0.002681) => (99, 0.04) / (66, 4e-4) / (0.0, -1.75)

• Define PolyGate doping type and concentration (Arsenic 6e19) • • • •

Save Build mesh Journal off Check .tdr .jrl


Reference: MeshGen, p72; SDataEx, p11-15 • snmesh project_name • SMesh automatically adds .bnd and .cmd to the base name project_name to obtain input file filenames. SMesh creates the output file project_name_msh.tdr that contains mesh geometry information and doping information. • In the case of TOR files as input file, special naming rules apply. • tdx -mtt -x -ren drain=source n@node@_haICmsh n@node@_msh

• -mtt: Mirrors TOR geometry and saves the result to another TOR file • -x: Mirror at xmin • -ren: Rename a region or regions


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4/2/2009

The Final Mesh for SDevice DQfilngCl)ncer.ltallOl1lC:!TI~·31

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x [urn]


User Exercise • Import command file & go through batch mode • Do the refinement manually as stated in the interactive mode. • Build the mesh & check result


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4/2/2009

The Final Mesh for SDevice DopmgConcenlra!lcm !cm-'-31 34E.20

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User Exercise • Import command file & go through batch mode • Do the refinement manually as stated in the interactive mode. • Build the mesh & check result

synopsys' PredictableSucccss

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4/2/2009


Outline • Flow of input and output in SDevice • Command file introduction • Parameter file introduction • O.18um nMOS Id_Vg example


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Flow of Input and Output in SDevice Input Models, Parameter, SWeeps

Input

Output:

Device Structure

IVs. Field distributions

Output: Runtime messages


Command File File "define the input and output files of the simulation"

}

Electrode { "define electrical (or thermal) contacts, initial bias condition, special boundary condition" Physics

{

Plot

{

"declare physical models" "specify the solution variables that are to be saved in the Plot file" Math

{

Solve

{

} }

}

"options of numeric solver" " set bias sweeps sequence and solve transport models"


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4/2/2009

Parameter File • Refer to SDevice manual 2007.12 P .56 • Check default parameter file by materials • When parameter file is empty, use default parameters

Reference: SDevice, p56 • The parameter file contains user-defined values for model parameters (coefficients). • The parameters in this file replace the values contained in a default parameter file models. par. • Model coefficients can be specified separately for each region or material in the device structure

synopsys' PredictableSucce5s

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• Refer to 0.18um_nMOS example Vg=O-1.5v

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synopsys· Predictable Success

User Exercise • Use 2D_Sprocess example, do: • Add Structure Editor, add "PolyDop" parameter, import command file • Add Sdevice, add "Vdd", "Vds", import command file, and specify import parameter • Run (Result checking will be demo'ed in the next section)


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Outline • GUI interactive mode • Load curve file, plot curves • Edit Plot area, Axes • Create new curve • Formula library - refer to manual 2007.12 P .25,48 • Macros - refer to manual 2007.12 P.26,50 • Save, Export

• Script file batch mode • Record each operation step on interactive mode to generate a script file. • Script a command file - refer to example 0.18um nMOS • Extract standard parameters of the extraction library


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4/2/2009

Reference (Inspect, p48 I p50) Function Table:

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aud I •.

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MACRO Example:

The macro ADO is defined as: + This macro adds two curves. The macro prototype looks like: AOO«CURVE>,

User Exercise • Open Inspect, plot IdNg in log scale, and obtain gm by getting max(diff(curve)) • Create an inspect script by GUI: record, load pit, plot, save, modify code.


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4/2/2009

Inspect Script Basic Version A-200B.09 RevO.O

synopsys'" Predictable Success

Agenda • Basic Operations and Script Commands ~

Load pit File: proUoad

~

Create Curve: cv createDS

~

Set Attributes: gr_setAxisAttr; cv_setCurveAttr

~

Extract Variables: cv_compute; ft_scalar

• Mathematical Formulas and Macros ~

Mathematical Formulas

~

Macros

• Threshold Voltage Extraction ~

Definitions of Threshold Voltage

~

Inspect Script

synopsysPredictable Success

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4/2/2009

Inspect Script • Inspect can be controlled by using a simple scrip language. For example, a script can load a project (data file), draw curves, and perform mathematical computations on curves. • A script can be written manually or created automatically by recording actions performed interactively through the graphical user interface.

• Inspect script can extract variables to SWB family table. FamUyTree

-

··i-~-···:llin~~iJ I . ... . ~~!""Ei:.ii.. ..!.p..~~~~~. __ ~ __ --' .----~~----; --.~~g -. --!.- .. ~?.~!~.!!".-.....

,-,-====..,.,..-==--..

-----'r;-'l"'~~~""~ift'--'.---:-;__ --1i-,-_-~;f--;;O~.~~7S-

..

(~:~~~:~:=:~-=-~~==~·::-==~:~=- -l=~~~:=~; . 0.01 , 1 .-....

0 075

0.OB5 0 100 ......

·o:oiis-··-'·-·-·-·::.-····-·-·:·---·-=-···--l~·-::::·--~~

oj'io ....

'-'-"a~03z's-""-7-' -··-··='-·---·T·--."-·':::-·-~·~i--····::'-···"·...... ~'-O:092S--~

.

__

Variable....Values .......... _.. _.... .

.

0.250'

O.~6

O~~3

"'ri~340' ...... - "0.2'-5-- ... If 327' -- . . o.2olf . ·····0·'3,·5·· '0' ;"99" ... 0298 . -. --0 ,'6e'0257 0.158


Basic Operations and Script Commands


45

4/2/2009

Basic Operations and Script Commands •

The basic operations and script commands are explained: ~

Load pIt File: proUoad

~

Create Curves: cv_createDS

~

Set Attributes: gr_ setAxisAttr; cv_ setCurveAttr

~

Extract Variables: cv_compute; ft_scalar

• A backslash '\' is used to extend a command to multiple lines if it appears as the last character on the line.


Load pit File - Operation - (1/3) Is-i?fflj!tiHbfflfttfi,.rlAli

vi

4.Mm[~ij

==:::.·_ _.·_ _ _ _ _ _.·.·_ _ .·.·.=J;I~r§ :;;;;;;;;;:.;;-.--,.-;r:-1<-":;~.~--==:==~__ Eile; gdit £Urve

~crlpt ~enslons tielp

r"---"""i

Automatically Update Datasets._

lletete

Oatasets

1-,-----------

1. CliCk" oad Dataset ... "

...................................__......_......... __ ........___.1

l..O<¥, Setup...

!i

~ve

1

Setup_..

.

.-.-.-..-......-.-.....................-. ···-···-··1 Restore AIL

.

sate AIL

i

0.8

--··-----····-·····-·---·-····1, £>l>ort rj - -.............- ..----.. _ ...... ·····1 WrtleEPS_ WritePS_

Print._

'I'

.

ctrf+p

t

0.6

·~~~~~~~~- =--~-~=~==I ~

CtrI+Qj

0.4


46

4/2/2009

Load pit File - Operation - (2/3)

6 imM~*;£~~~,:L;~.. :,<,.~~~-:r' >.2!lJ ::~~l>,:remoteJ!caJ:l/SalOShjYJSTl)BfTraJnlnglnmOS-'OIlO1f ~ I ihJ i 1

ft4$ltMM§

IiJ n14_des.plt

I

[E nlS_des_pTt

f

IE n16_des.plt ~

n17_des.plt

III n18_des.plt ~ nlS_des,ptt .,

f

I' C, .1,.4-

4';

2. Set "Files of type"

4. Click "Open"


Load pit File - Operation - (3/3)

c .........,.

.---

;::::~::v.

····i··· 5. DC\t~set name

___::.:::::__ J ...___ ~_._.; _2::~.:=:~j

synopsys' Pre
47

4/2/2009

Load pit File - Command • Load pit file

proj_7oad n2 des.p7L n2 des 3. 5. ~

n2_des.plt : the name of the file to load.

~

n2_des : the arbitrary name user can define for this dataset.


Create Curve - Operation - (1/4) :;<>; f~'~

~t.;:;'~

g' :i--' -,::.. --c-"-,,-c.-c_

;"'''-

c"..,.'
f,:~:::·; -1 ;fCfiCK "Qatasets" -1


48

4/2/2009

Create Curve - Operation - (2/4)

"contact" "OuterVoltage"

t·;~-.;:.;;j' _4..G.!i.ck 'To X-Axis"


Create Curve - Operation - (3/4) WIT?

5. Selec "contact" ,

,-

"TotaICurrent"

synopsyS' Predictable Success

49

4/2/2009

Create Curve - Operation - (4/4)

~i""'-"""'"

"'i

8. Curv,e Name

~J,


Create Curve - Command cv_createDS Tota7Current Drain \ \ 8. {n2 des gate OuterVo7tage} \ \ 1. 2. 4. {n2 des drain Tota7Currentl y 1. 5. 6. 7. • TotalCurrent_Drain : a unique name for the new curve. • {n2_des gate OuterVoltage} : a list of data to use for the x-dataset • {n2_des drain TotalCurrent} : a list of data to use for the y-dataset • y : optional parameter specifying the axis to use; the default is y; the options are y or y2.


50

4/2/2009

Set Attributes • This section describes the functions that change the attributes of the axes, curves, and legend.


Set the Axis Attributes - Operation: Start -

......:.::-:".::...J

_=.___;

..~~:'2~:~.J

_~~ __ l

M',"y,_

I

1

' 1. Double-click the axis

j+::::::::::::::~::~~~::::::::;:::.:===.~:::==::::::::i:==~:::::i~

"='=::':':':::'<~~-::;;;jr;.;;,;;~i.;~;:'~~""~':';;''';''~'''~''''''''~''~-:;;;~J:


51

4/2/2009

Set the Axis Attributes - Operation: Editing Title (1/2) CUN8t-·---·

68'-05

Color.

•

3. Change ,j Font..

2a-05

synopsys' PredictabJeSuccess

Set the Axis Attributes - Operation: Editing Title (2/2) Be-OS

P:attems. -Scale

6e-OS

l1IJe -TIcks:

TlUe:~vgM Color:

49-05

5. Change "Fon 2a-05 -----------

="'sa:::ffi,-p_le_te_xt_ _ _ _-'

L I_ _ _

__ I·~·~~-~:~_~_~~I_i~~_~'O _ "


52

4/2/2009

Set the Axis Attributes - Operation: Editing ScaleBe-OS

L; ;,


Set the Axis Attributes - Operation: Editing Pattern (1/2) 8a-OS

10. Click "Patterns" tab iN..

t

&lliirtir.;;~~~:~':'; "\'!-:.~

X-Ms ·!leIl.V-Ms 1Right Y-AxIs 6e-OS

C~~~~~~ Scale

11tIe' nets

~

.. OJspta!lX-Ax!s ...) Display VarlIcaJ Una AI x-o

4e-OS

11.

Clic~)

Color"

2e-OS

0.5

synopsys' Predictable$uccess

53

4/2/2009

Set the Axis Attributes -- Operation: Editing Pattern (2/2) -ae-os

12. Click "Patterns" tab :c.:~~L~~ Y-AXI$ tie-OS

: PallBms :Scale '.~

...-.--:

R~nl Y-AxI&

.

Title ,Tlcb

...,; Ol$play Vefl!calline At X"O

.- ....................... _..... .

4e-OS

~~~~~~=~==j~~~~=~=} COlOr:

II


Set the Axis Attributes - Command gr_setAxisAttr 2{ {Vg [V77- {aria7 15]\ 1. 3. 5. {aria7 is} a 5 a b7ack

a

8 b7ack 1 \ 8. 11. 13.

• X: a keyword (X, Y, or Y2) specifying an axis. • Vg

M : the axis title .

• {arial 15} : the font size of the axis title. • 0 8 : minimal and maximal values of the axis. • black: the color of the axis. • 1 : the width of the axis line.


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4/2/2009

Set the Axis Attributes - Operation· Editing Ticks (1/2)

Sa-OS

Subdivislan'

Type

4(>-05

Ze-OS

16.

17. Clic " K"

05


Set the Axis Attributes - Operation: Editing Ticks (2/2) hi!

w:Rl2ix:>:;":

L

2
X-AId, : LmlV-AlGs. :Rlgllty-Axis ,

18. Change TiGk b.abehAngle"

Typ.

J4;9:-Change I' FollL ;


55

4/2/2009

Set the Axis Attributes -- Operation: Changing Log/Lin -Ss-os

£ ill~~Xs:~,:-·~.>'

we.

2SJ

X-Axi' :lI.J1'lY-MS i.RlghtV-AAi,:

20. Click "Scale" abn'~~-;;'~;~~Tm.n,,,, Min.:

6,-05

r---

r:;'~=~~~:'~~~;::;:I~i~J 21. Cha~

4e-05

-------..---....-.-----

Za-OS


Set the Axis Attributes -- Operation: Editing Font of Title -Mt,
iN "_

',i!.!

X-AxIS; len V-AxIs: Righi. V-M~

P"'m,

------." ~

is~"F;;:hr022. Click

-------....... ---....--_ .. _--_ .. ..... ~

Ze-as


56

4/2/2009

Set the Axis Attributes - Command gr_setAxisAttr K {Vg [V]} {aria7 1S} 0 8 b7ack 1 \ \ {aria7 1St Q i Q b7ack 16.

18. 19.20. 23.

• X : a keyword (X, Y, or Y2) specifying an axis • {arial 15} :the font size of the tick label • 0 : the angle at which the tick labels are drawn • 5: the number of secondary ticks between the main ticks • black: the color of the axis title


Set Curve Drawing Attributes - Operation: Start 1Ii:1$!===:::=I!II_ _ _ _ _ _

nl!i!i!!W~m1ii!l_1ii!l,-Il1E~,'{o0fif1ff%t':$XW:.::;;~0C;','-::--0

~,.

~;;...>--'

c,J;.Sv·-·:;,..· ..


57

4/2/2009

Set Curve Drawing Attributes ..... Operation: Editing General Part .....

2. Click "General" tab !&.::tJJ iMtUiis{;~:,=~;;:;-~

......:

: '~
.

.~ ~

M."....".~

~

~li;~~"'f


Set Curve Drawing Attributes ..... Operation: Editing Line Part (1/2)-

4. Click "Line" tab .... i2!t!!:.i!::!¥Zl},,::!,i1_ _Il!!,mmMH®f%~m!lfL;;d:/

.rastsr . Imerpnl~on

Gene~:,:~~::

COIOr. ....a .......- . • • • _ . __ . . . . . ...

:

l1li00l1lil1li:

'-1 ~:=~~~

w,,,,,j

1'00000

n

l

~" ............................}

:1 5. ChangelW'Color" ~§

o~s


58

4/2/2009

Set Curve Drawing Attributes -Operation: Editing Line Part (2/2)-


Set Curve Drawing Attributes - Operation: Editing Marker (1/4) -

8. Click "Marker" tab WMti I.!f.

·~uu_u.

M@f@EJgxl!l~;,:¥;;Z:·::.< 0 ~_ 29;

~oor.ll LJneL~::::EtnwrpOIatlOf1

[~:::::=&£:::::::::::!:1

~l

9. chaJbe "Shape"

;Sll8. :s::,"...: 10. Change ................... 0uU~ CMorc

II

OV1llneWIOlIl:~ FII!Q)lot:

1~

"~,ze"

U 1~!

•

-"-~ .._.. ~--....-.. -.-- ---- ,--_. ... .------_. - .._-_.- ~~j

..-.... jl


59

4/2/2009

Set Curve Drawing Attributes - Operation: Editing Marker (2/4) --

o's Ouh'fl,lQlI3ge M


Set Curve Drawing Attributes - Operation: Editing Marker (3/4)m·

t

Shap~

~::t..::::_~:-

i. .

GIIf>II.al.l.tni!

Matkin lln!orpolalklfl

,....._._....... i~re

_._-_ .._--,

~I

Ij

il

12.

Chang~ "Outline Width"

__ J!

-"'-"-'--'--~"~~~X'~~;~~~~~~J-'----'-"!


60

4/2/2009

Set Curve Drawing Attributes - Operation : Editing Marker (4/4) -

_.

~i?¥iCitll:i":::l.I:m._ _ . ~~"l1lZ:,;;:;:' Ciener~ :lIrIa

MarIoor

InterpOlaIlOn:

.·.!91 !

I!

j'JqllilN

I o"''",.w'''"r~ 13. Change "Fill Color"

OutllnilC010f"_.

......................c...... (

:

FlUcoloe,.

.1

••:

DooD.d

'I ,j

. . ·····~~:=~~~g=~~:=-·························I

.88888~1Jj~J . .1 _--_ ..--14. Click "OK"

\ ............. _... __ ...


Set Curve Drawing Attributes - Commandcv_setCurveAttr Tota7Current Drain IdVg b7ack so7id 1 \ \ 3 5 6 7 square 5. b7ack 1 b7ack 9 10 11 12 13 • Tota7Curren'LDrain": the curve name.

IdVg: the curve legend. b7ack: the color of the curve line. so 7 i d : the drawing style of the curve line. 3 : the width of the curve line.

square: a keyword for the marker shape. • 5: the marker size.

b 7ack : the color of the marker outline. • 1: the width of the marker outline.

• b 7ack : the fill-in color of the marker.


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4/2/2009

Compute a Scalar Using the Formula • The formula library allows some basic calculations to be performed on one or more selected curves. cv_compute "formula" xmin xmax ymin ymax ~

formula: the string with the formula to evaluate.

~

xmin, xmax, ymin, ymax : the range for which the formula is applied.

synopsys' Predictable5uccess

Extract Variables • The Inspect command ft_sca 1 ar prints the extracted value and passes it to Sentaurus Workbench. • Examples: set maxid [cv_compute "vecmax( , 1e-S)" 0 1.0 0 1.0] ft_sca7ar Vt $vt


62

4/2/2009

Extraction Library • The commands provided by this library are used to extract various parameters from I-V curves. The library is loaded with the command: 17oad_7ibrary EXTRACT

I

• Refer to Inspect manual for more information.


RF Extraction Library • The commands provided in this library are used to extract RF parameters from small-signal data. The library is loaded with the command:

I 1oad_1ibrary

RFXI

• Refer to Inspect manual for more information.

synopsys' Predlctable$uccess

63

4/2/2009

Recording Script • A script can be created automatically by recording actions performed interactively through the graphical user interface. • To create a script: }- A Script Name dialog box is displayed, which prompts you to select or create a script file. Script> Record> Start }- After selecting the file name, Inspect starts to store every operation until recording is stopped. £'''' "",,~'" ~'" . t R d St n;; ..... RunScnpt Ctr/ ..R ~ ~ II? S cnp > ecor > op-~~~ A:~~_ _ _' start. _ _ [ 'q.

~

Add Pau,e

j

1 ...J

--:-;--.,- _ _ _ Add Breat

stop

~


Inspect Execution Mode • Inspect has two execution modes: interactive and batch mode. You can change mode bY:':-:'S'J,~tExe~:':n':::: ."~ Right button>Edit Input>Preferences ...

'"n' ....... ,~~

64

4/2/2009

Mathematical Formulas and


Mathematical Formulas (1/2) • Click the New button below the Curves area in the Inspect main window . • The Create Curve dialog box is displayed. The right pane lists available Cur/e1

jWiY-,_,---

t~3me;

ro.e~~J!1I~",~~I!!..::·-; 5 ..::' F"O/lft'.cr""V\.'"l~iP{"'ToWCton:~~in"):>

j

MO!:p Cllf'.l1I 'To .. t.sfl Y...to'4 v

F1fgr.t V-A>d:

e.n.

coe, ctt'n.

<&0'$. :oe1nh, li:$Ilr,-atL1t;.. 'Stann, ~ c:",II.. f:rt. erlt:,e>IW1.!'Itt.

W\1'<,~~Wt, I;ntl.JI}.yl~'!Im',:r.:!~f

...'t~wC"ltIir..,

l,:':C';'JI;k. "-&e"'$:;,t"lI~twe:::
,:ur-,tE>n~'l\j}: ll'I1t1e form>JIa~c.t tlJlTOU!ltleti tJ{'''~lll'ld ~•• ltyol.l1lJll

mm;

mwo}, CURVftros1: be teplar-I!(t iIo'l!l ~e,r;:U!V!)"!'lam$'

~.'-J

:'Ittro

t~tobrv~


65

4/2/2009

Mathematical Formulas (2/2) vecmax (curve) >- Maximum y-value. • • •

vecmax

vecmin (curve) >- Minimum y-value. vecvalx (curve, scalar) >- x-value at a given y vecvaly (curve, scalar) >- y-value at a given x veczero (curve) ____-+~~ve~c~z~e~r~o----~x >- x-value at y = o. diff (curve) >- Retums the first derivative of the curve. vecmin integr (curve)

>- Retums the integral of the curve. tangent (curve) >- Retums the tangent


Macros (1/3) • Macros are predefined commands that can be later recalled. For example, in Inspect, there is a predefined macro, VT, which performs the threshold voltage extraction.

Macros ~u.acortl.;uIn..:.sjrtl.alln.lIIul!,cttla!ll.eM.ant1.e!I.

vfI;, Dl'. WIS.~wr.o......... P.!l.",""",,~Ic>c.I3q1I). ~ ......
"cm»l.. ..... ""'.'et¥~""cvl;lvlm(eot.~I!CZl

66

4/2/2009

Macros (2/3) • Macro usage: ~:'~~'"YdC!i£;;:z:::;:;s:J~~g-:f~~_~__ C>.

~_

;;<,,-__._

~,-:

!,.;<-,~,

=.,

!l'1L*§t)fi@i,;·

Id "5. Vgs (Lg-O.oss urn. Vds..o.OS V)

""'5 .

3. Select curve¢_'o",_o- - - - - - - - .....1aDI.fbrmulleCllrHno'''"' 2e{)5 •

lCOI.oeoofl,asln._.'II""._.Cl>/tcOji.co<,COl.noo•• gam ..... JO.lt.Ig ...... a.,loq.IIIqIO.j>O'><•• ln • .... h •• ~tI._._.yo.y.""'.m.9'

0.5

4. Click "OK"


Macros (3/3) • Macro definition can be edited by Edit>Define Macros ... MacroUst

Name:

1. S~ect "VT" fRnU1

Macro:

ivecvaIX(tangent(<:c l>.veczaro(ditr(
- vecmax(dttf«C';'

~-----2'~croaefinIT~lo~nW-----available (Qrm(..!la commands to create macros are:

jRon :IOSS

acos, acosh, asin . . asinh. atan, atanh# cbrt, ceil, cos, cosh. ert erfc. 6Xp. fabs .. lloor. gamma, jO, j1 ... Igarnma. 109 .. log10. pow, sin. sinh. sqrt. tan. tanh, yO, 1'1. dllC lntegr

'iest1 'testtZ

Add fEd"

Delete

vecmax, vecmln. vecvalX. vecyaly, tangent, veczera Use "· as place holders for curves: and -<5 n> ~ for scalar values

In the macros, where n represerrts: the argument used in the macro (n

must start with 1) .

.close


67

4/2/2009

Threshold Voltage Extraction


Definitions of Threshold Voltage (1/2) Id

Maximum slope of the curve

Definition 2

•

Id VT

t

Definition 1

Vg

--~~------~

VT1

Vg

synoPSYS' Predictable Success

68

4/2/2009

Definitions of Threshold Voltage (2/2) • Macros

VT:

Ivecva7x(tangent«c1>,

veczero(diff«cl> - vecmax(diff«c1»))) , 0.0)

VT1:

I vecva 7x(,

1.0e-7)

Script functions

VT:

I f_VT

curveName xmin xmax ymin ymax

VT1:

I f_VT1

curveName xmin xmax ymin ymax

I

>-xmin, xmax, ymin, ymax, the range for computing the result; default values correspond to the full curve range.


Inspect Script (1/4) set N @node@ set Vd 0.05 set Lgshift @Lgshift@ set Lg [expr 2. O"SLgshift+O. 065] fLscalar Lg [format %O.3f SLg] proj_load @plot@ PLT(SN) cv_createDS IdVg(SN) \ "PLT(SN) gaLe OuterVoltage" "PLT(SN) drain TotalCurrent" y cv_setCurveAttr IdVg(SN) "Id" red solid 2 circle 0 defcolor 1 defcolor gr_setAxisAUr X {Gate Voltage (V)} 12 {} {} black 1 10 0 5 0 gr_setAxisAttr Y {Drain Current (A/urn)} 12 {} {} black 1 10 0 5 0 gr_setTitleAtLr "Id vs. Vgs (Lg=SLg urn, Vds=SVd V)" 14 center #- Extraction #- Calculate the threshold voltage [V] set vt [f_VT IdVg(SN)] fLscalar vt [format %O.3f Svt] set vLl [CVT1 IdVg(SN)] fLscalar vt1 [format %O.3f SvLl]


69

4/2/2009

Inspect Script (2/4) Lg Set variables: set set set set

@node@ Vd 0.05 Lgshift @Lgshift@ Lg [expr 2.0*$Lgshift+0.065]

N

H

H

Lgshift

Lgshift


Inspect Script (3/4) Load plot file:

I proj_load @plot@ PLT($N) Create curve: cv_createDS IdVg($N) \ "PLT($N) gate OuterVoltage" "PLT($N) drain TotalCurrent" y

Set curve attribution: cv_setCurveAttr IdVg($N)

"Id" red

solid 2 circle 0 defcolor 1 defcolor

Set axis attributions: gr_setAxisAtLr X {Gate Voltage (V)} 12 {} {} black 1 10 050 gr_setAxisAttr Y {Drain Current (A/um)} 12 {} {} black 1 10 0 5 0

Set title:

Igr_setTitleAtLr

"Id vs. Vgs

(Lg=$Lg um, Vds=$Vd V)" 14 center


70

4/2/2009

Inspect Script (4/4) Calculate VT: Iset

vt

[f_VT

IdVg($N)]

Export the variable to the Family Table of Sentaurus Workbench:

I

fcsca7ar

Calculate VT1 : Iset

vtl

[LVTl IdVg($N))

I

Lg

[format %0.3f $Lg]

... fcsca7ar fcsca7ar

vt [format %0.3f $vt] vtl [format %0.3f $vtl]


Ex 1. Threshold Voltage Calculation Project: IPostBasiclquestionlinspectinmos_rol/off_inspect • Using macros: >Select batch mode Edit Input>Preferences ...

• Using inspect script: >Select interactive mode Edit Input>Preferences ... >Run.


71

4/2/2009


Sentaurus Structure Editor ~~~~~~

Generating 20 Boundaries With Online Training Material


72

4/2/2009

20 Exercise


Steps • Draw> Exact Coordinates • Draw> Overlap Behavior> New Replaces Old


73

4/2/2009

Regions

Region

Material

Coordinates

Substrate Silicon

(-0.5,0), (0.5, 1.0)

Gate oxide

Si02

(-0.2 -40e-4), (0.2 0.0)

Nitride spacer

Si3N4

(-0.2 -0.2), (0.2 -40e-4)

Poly gate

PolySi

(-0.1-0.2), (0.1-40e-4)

Buried oxide

Si02

(-0.5 0.1), (0.5 0.2)

Edit> Separate Lumps.


Rounding Edges

.... Ix

llJrtU-<4 D IAPerture selectl .•

• Edit> Edit 2D > Fillet >'. )

',\/Woe;

...:....;.....~

r:':;-';--'.;..:....-'-':.....;-:...;......;. •• >-'--, : .

c~~.· j~~~t~~3

... ,J:-~::.:- ~~~

r

.

, . "l

'-r:c:lo·~::'-..-.. ~-'--~-"'--.-c~-' .. r~'· :~e>~:_<

1J

~"':~ ....•. :r::-:-.-~---'--'".. -"'.:.-.-.·l: ..~.Jl synopsys' Predictable Success

74

4/2/2009

Declare Contacts

""""

"",

jW)(lOOO 3IJ1;tt.!t411)"

S·

"" I I "'""

I\

0-

I.Jil

• (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.0 0.0 0.0 ) "##") • (sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.00.0) "##") • (sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.00.0 1.0) "##") • (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.0 1.00.0) "##") • (sdegeo:define-contact-set "bodytie" 4.0 (color:rgb 1.0 0.0 1.0 ) "##")


Set Contact (1) • Contacts> Set Edge(s)

• (sdegeo:define-2d-contact (find-edge-id (position -OA 0.0 0.0)) "source") • (sdegeo:define-2d-contact (find-edge-id (position OA 0.0 0.0)) "drain") • (sdegeo:define-2d-contact (find-edge-id (position 0.0 1.0 0.0)) "substrate")

synopsyS' Predictable Success

75

4/2/2009

Add Vertices

• (sdegeo:insert-vertex (position -0.10 0.1 0.0)) • (sdegeo:insert-vertex (position -0.05 0.1 0.0)) • (sdegeo:define-2d-contact (find-edge-id (position 0.07 0.1 0.0)) nbodytien)


Define Region as Contact • Select Body • Contacts> Set Region Boundary Edges • Edit> Remove> Region

• (sdegeo:set-current-contact-set "gate") • (sdegeo:set-contact-boundary-edges (find-body-id (position 0.0 0.1 0.0))) • (sdegeo:delete-region (find-body-id (position 0.0 -0.1 0.0)))


76

4/2/2009

Renaming Regions • Select Body • Edit> Change Region Name • (sde:add-material (find-body-id (position 0.0 0.8 0.0» "Silicon" "RSubstrate") • (sde:add-material (find-body-id (position 0.0 0.15 0.0» "Si02" "RBox") • (sde:add-material (find-body-id (position 0.0 0.05 0.0» "Silicon" "RSiliconepi") • (sde:add-material (find-body-id (position 0.0 -20e-4 0.0» "Si02" "RGateox") • (sde:add-material (find-body-id (position -0.15 -0.1 0.0» "Si3N4" "RSpacerleft") • (sde:add-material (find-body-id (position 0.15 -0.1 0.0» "Si3N4" "RSpacerright")

• (sde:showattribs "all")


Saving the Model • File> Save Model • (sde:save-model "soifet_bnd n ) • model geometry - native ACIS format file soifet.sat • Ref/Eval windows and parameters - soifet.scm • DF-ISE format refinement and doping - soifet.cmd • DF-ISE format boundary - soifet.bnd

• To use the TOR format for the boundary file: • (sdeio:save-tdr-bnd (get-body-list) "soifet_bnd.tdr")


77

4/2/2009

Defining Constant Doping Levels in Materials • (sdedr:define-constantprofile "ConsLSilicon" "BoronActiveConcentration " 1e+15) • (sdedr:define-constantprofile-material "PlaceCD .Silicon" "ConsLSilicon" "Silicon")

·"remJ!.m·W:\;W!Ijl!)m.:::::r:::::mrr~~.,-~ i

;

~'Pi~cD-5if;;;

""""""""'"

~j

PlillCeTneotType

.J .J

0"'""'"

ORog;on

~l

I..·oon

® Mat"'"

CortrtantProfiltDe1inition------------,

~I

tComt.Sir~·

Name

I

Bor0n.Activ6Concentration

Specb

~J

i

j

j!

~----~lo==~~-----D~~ 0

Decay factor

I

Ch",.. _ _ _

II

Replace

On

I

"'.Ie"-,n!

~

;

------_=-..1

L..-_______


Defining Constant Doping Levels in Regions • (sdedr:define-constantprofile "ConsLEpi" "BoronActiveConcentration" 1e17) • (sdedr:define-constantprofile-region "PlaceCD.Epi" "ConsLEpi" "R.Siliconepi")

rPlaalmentType---------,

o

flef/'Mn

@Atglen

I

I A.SI\Ic:onepl

~l

,CorohlntProllleDefnition------------,

NMn,

·_····--'~I

1<-:0;."_,...:",,,_··_ _ _ _ _ _ _ .

I Spec~

I_""""",eor-"""on

lConct:ntnillon

Jle+17

.¢

I

j

Decay FlIC101'

10

DOn

OR"".,.

: I Cl1~e~t I I'-_""_',..__~"""""_t__.J lb..-.-.-.-.-..---...--------...---.~..-

. - - . - -...--..--..--.... -...--..-.-...-.---~=I


78

4/2/2009

Defining Analytic Doping Profiles (1) Define Baseline (sdedr:define-refinement-window (sdedr:define-refinement-window (sdedr:define-refinement-window (sdedr:define-refinement-window Junctions

Basolino Name

BaseUne.Source

"BaseLine.Source" "Line" (position -0.80.00.0) (position -0.2 0.0 0.0)) "BaseLine.Drain" "Line" (position 0.2 0.0 0.0) (position 0.8 0.0 0.0)) "BaseLine.SourceExt" "Line" (position -0.8 0.0 0.0) (position -0.1 0.0 0.0)) "BaseLine.DrainExt" "Line" 0.1 0.0 0.8 0.0 0.0))

start Point

EndPoint

.(l.80

.(l.20

BaseUne.Orain

020)

0.80)

Qurce extenS10n

BaseUne.SourceExt

.(l.80)

.(l.10)

rain extension

BaseUne.OrainExt

0.10

0.80

Dram

I

Defining Analytic Doping Profiles (2) ~2~----------------' ~1

Junctions

Dram ource ExtenSIon

Dram Extension

Placement Name

Baseline Name

ProfiloName

PlaceAP.Source

BaseUne.Source

Gaussian.SourceOrain

PlaceAP .Drain

BaseUne.Drain


PlaceAP .$ourceExt BaseUne.SourceExt Gaussian.SourceOrainExt

PlaceAP.DrainExt

BaseUne.OrainExt

Gaussian.SourceDrainExt

01 02 03

)-0.4 05 OS

07

Profile Name

Peak Peak Junction Junction Lateral Concontmtion Position Concontnation Depth Factor

x10,g cm--J

Dum

1017 cm-3

aussian.$ourceQrainEx 5x1016 cm-J

Dum

10 11'cm-J


0.12um 0.035 m

0.8 0.8

08 09

-05

-025

o

025

05

X

• (sdedr:define-analytical-profile-placement "PlaceAP_Source" "Gauss_SourceDrain" "Baseline. Source" "Positive" "NoRepiace" "Eval") (sdedr:define-gaussian-profile "Gauss.SourceDrain" "PhosphorusActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e19 "ValueAtDepth" 1e17 "Depth" 0.12 "Gauss" "Factor" 0.8) • (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss.SourceDrain" "BaseLine.Drain" "Positive" "NoReplace" "Eval") • (sdedr:define-analytical-profile-placement "PlaceAP.SourceExt" "Gauss.SourceDrainExt" "BaseLine.SourceExt" "Positive" "No Replace" "EvaI'") (sdedr:define-gaussian-profile "Gauss.SourceDrainExt" "ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 5e18 "ValueAtDepth" 1e17 "Depth" 0.035 "Gauss" "Factor" 0.8) (sdedr:define-analytical-profile-placement "PlaceAP.DrainExt" "Gauss.SourceDrainExt" "Eval") "Baseline. Drain Ext"

synopsys' PredictableSucce$$

79

4/2/2009

Defining Mesh Strategies in Regions • (sdedr:define-refinementsize "RefDef.Epi" 0.1 0.01250.0050.005)

-"""" """"""''''''

(sdedr:define-refinementregion "PlaceRF.Epi" "RefDef.Epi" ''R.Siliconepi'')

IIp,,;,,RF..,,, .

~I

o Aef/Wln

1

~I

®RogIOn

IR.-"""

~I

lf~ ~

!

~

I

i

~l 1

0""1"'"

Reflf'lementDef.rutlon-.-----------

(sdedr:define-refinementfunction "RefDef.Epi" "Doping Concentration" "MaxTransDiff' 1)

yOirectlon

X Directlon

ZOlrcctlon

Max Element Size

10.100000

~_012500

Min EJementSlze

rjooo-,-ooo--

r~0--050--00~-

Change P1ac:ement

II

r----

I

Dele:te PIacemerlt

Defining Mesh Strategies in Refinement Windows • (sdedr:define-refinementwindow "RefWin.all" "Rectangle" (position -0.5 1.0 0.0) (position 0.5 -0.2 0.0» • (sdedr:define-refinementwindow "RefWin.Channel" "Rectangle" (position -0.1 0.00.0) (position 0.1 0.1 0.0» (sdedr:define-refinementsize "RefDef.all" 0.25 0.1 0.250.1) • (sdedr:define-refinementplacement "PlaceRF .all" "RefDef.all" "RefWin.all")

~I

Placement Name

~

I~""""'="':='=======::: I ·1 j ~I YOirectlon MaX Bement SIze

10250000

Min 8ementS@

r-lo,-ooooo---lo.looooo

Z Direction

,Refrnemenifu'lctiOr'l:l---------------,

i 180"'Wtivf,:-""""----:-1~1 '" "1'- - r~=·=--_ _...1I=Crit=,ria_ _.L.:I\kruo"'___ ___'1 : : : :

II I

a.n,,_,

II

""'I,,,,,,,,",,,,,

"'.;IA.I•• I•• · •.• ,

80

4/2/2009

Defining a Multibox Mesh Strategy in Refinement Windows • (sdedr:definemultibox-size "MB.Channel"

0.050.01250.025 1e-41 1.35)

Llfptace_M_B.O=m __ ' _ _ _ _ _--'~l

Placement Name p",,""""TYP'

!

r

RefI'Mn

I

,-, "-""o-.o,-ann-d----:-.~

! rM"tiboxDFefl""~""~~__~~_~

i -,I,-!MB~~~_ _ _ _ _ _~~I • (sdedr:definej v multibox01 0 1. = placement 1 """ 1°·050000 M;n 10.000100 10.025000 "PlaceMB.Chann 1 "'" "'" R>.tlo )1.000000 11.350000[ el" "MB.Channel" I "RefWin.Channel" ;~----------------~ ) I I =.,p,=",. I I "'."P""""'" I I 00" L .......................--........-----.--.-...-............-...-..-. ".J

-

-

X

Ratio

Ratio

II


Build Mesh • Mesh> Build Mesh. o

001

>0.5

002 0>-

003

004

005

·0.5

-0.25

0

0.25

0.5

X


81

4/2/2009

Sentaurus Structure Editor 3D Structure With Online Training Material ~--~~======--~


2D 501 M05FET • Draw> Auto Region Naming [off] • Exact Coordinates • Draw> Overlap Behavior> New Replaces Old • Isometric View • Draw> Create 3D Region> Cuboid • (sdegeo:create-cuboid (position -0.25 -0.2 0) (position 0.25 0.2 -1.0) "Silicon" "SubsSilicon") •

(sdegeo:create-cuboid (position -0.2 -0.2 0) (position 0.2 -0.1 -0.2) "Oxide"

"TrenchOxide_Right") • {sdegeo:create-cuboid (position -0.2 0.1 0) (position 0.2 0.2 -0.2) "Oxide" ''TrenchOxide_Left") • (sdegeo:create-cuboid (position -0.15 -0.2 0) (position 0.15 0.2 0.002) "Oxide" "GateOxide") • (sdegeo:create-cuboid (position -0.1 -0.1 0.002) (position 0.1 0.2 0.1) "PolyS;" "PolyGate")


82

4/2/2009

Changing View


Poly Re-oxidation • Old Replaces New

f1)JJ!iilJi;ij]@~ tOld replaces

nOWl

• (sdegeo:set-default-boolean "BAB") • (sdegeo:create-cuboid (position -0.103 -0.1030) (position 0.103 0.2 0.1) "Oxide" "PolyReOxide1 If) • (sdegeo:create-cuboid (position -0.15 -0.103 0) (position 0.15 0.2 0.005) "Oxide" "PolyReOxide2")


83

4/2/2009

Nitride Spacer • (sdegeo:create-cuboid (position -0.15 -0.15 0) (position 0.15 0.2 0.08) "Si3N4" "NiSpacer") • (sde:define-parameter "fillet-radius" 0.03 0.0 0.0 ) • (sdegeo:fillet-edges (list (car (find-vertex-id (position -0.15 -0.15 0.08))) (car (find-vertex-id (position 0.15 -0.150.08))) ) filletradius)


Define Contacts

I

~

It

(sdegeo:define-contact-set "gate" 4.0 (color:rgb 1.00.00.0) "##" ) (sdegeo:define-contact-set "drain" 4.0 (color:rgb 1.00.00.0 ) "II"

)

(sdegeo:define-contact-set "source" 4.0 (color:rgb 1.00.00.0) "==" ) (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.00.00.0 ) "<><>" )


84

4/2/2009

Setting Contacts at Existing Faces i

none gate drain source

I§J~:< 0'0 , IAPerture Selec(

• Contacts> Set Face(s) • (sdegeo:set-current-contact-set "substrate") • (sdegeo:set-contact-faces (find-face-id (position 00 -1)) "substrate") • (sdegeo:set-current-contact-set "gate") • (sdegeo:set-contact-faces (find-face-id (position 0 0 0.1)) "gate")


Setting Contacts at New Faces The corresponding Scheme commands for creating and deleting the two metal regions are: (sdegeo:create-cuboid (position 0.17 -0.1 0) (position 0.25 0.1 0.05) "Metal" "Source") • (sdegeo:create-cuboid (position -0.25 -0.1 0) (position -0.17 0.1 0.05) "Metal" "Drain") • (sdegeo:delete-region (find-body-id (position 0.22 0 0.025))) • (sdegeo:delete-region (find-body-id (position -0.22 0 0.025)))

The corresponding Scheme commands for placing the source and drain contacts are: (sdegeo:set-current-contact-set "source") • (sdegeo:set-contact-faces (find-face-id (position -0.22 0 0)) "source") • (sdegeo:set-current-contact-set "drain") (sdegeo:set-contact-faces (find-face-id (position 0.220 0)) "drain")


85

4/2/2009

Defining Constant Doping Levels in a Region • (sdedr:define-constant-profile "Const.Bulk" "BoronActiveConcentration" 1e17) • (sdedr:define-constant-profile-region "PlaceCD.Bulk" "Const.Bulk" "SubsSilicon") • (sdedr:define-constant-profile "Const.Poly" "ArsenicActiveConcentration" 1e20)

I~

I~-

;1

1,-"

• (sdedr: define-constant-profile-region "PlaceCD. Poly" "Const. Poly" "PolyGate")

synopsys' Predictable SUC~$$

Defining Analytic Doping Profiles • Mesh> Define Ref/Eval Window> Rectangle. • (sdedr:define-refinement-window "Baseline. Source" "Rectangle" (position 0.30 -0.25 0.0) (position 0.15 0.25 0.0) ) • (sdedr:define-refinement-window "BaseLine.Drain" "Rectangle" (position -0.30 -0.25 0.0) (position -0.15 0.25 0.0) )

• Device> Analytic Profile Placement • (sdedr:define-gaussian-profile "Gauss.SourceDrain" "ArsenicActiveConcentration" "PeakPos" 0.0 "PeakVal" 1e19 "ValueAtDepth" 1e17 "Depth" 0.1 "Gauss" "Factor" 0.8) • (sdedr:define-analytical-profile-placement "PlaceAP.Source" "Gauss.SourceDrain" "Baseline. Source" "Both" "NoReplace" "Eva I") • (sdedr:define-analytical-profile-placement "PlaceAP.Drain" "Gauss. SourceD rain" "Baseline. Drain" "Both" "NoReplace" "Eval")


86

4/2/2009

Defining a Meshing Strategy in a Window • (sdedr:define-refinement-window "RefWin.Global" "Cuboid" (position -0.250.2 -0.5) (position 0.25 0.2 0.1)) • (sdedr:define-refinement-size "RefDef.Global" 0.1 0.1 0.1 0.05 0.05 0.05 ) • (sdedr:define-refinement-placement "Place. Global" "RefDef.Globaln "RefWin.Global" ) • (sdedr:define-refinement-window "RefWin.Active" "Cuboid" (position -0.25 0.2 -0.15) (position 0.25 0.2 0.0)) • (sdedr:define-refinement-size "RefDef.Activen 0.025 0.025 0.025 0.0125 0.01250.0125 ) • (sdedr:define-refinement-placement "Place.Active" "RefDef.Active" "RefWin.Active")

fff?/ff"WFr~rwepw11rtto.~~

r:Vtlfiniffffft"f'ITf?WtiiW.-'7

1-I J

I

.fIcfI~

!_o_ I ~

Ololal_

I

[:c=J

l

~I ~I

'

c=J :

~I

-~- .-------- ------ ---- ~ ---,

i ....

!

~-

O/lq>n

i--

i---

'I

'

~~~,

1--~~~; r:==::--·--;IIv.:·:----··. ··:·l-;. ---··-..----··. .·ll. 1

Il[______. ~~:___I=_________->~~J I!

i~~==~====~----~~~ 11--11 1 .. ________ ~; I :J


Defining a Multibox Mesh Strategy in a Refinement Window • (sdedr:define-refinementwindow "RefWin.Channel" "Cuboid" (position -0.12 -0.1 0.05) (position 0.12 0.1 0»

t!"ml:>tlrla:Ollrn.1

;1

• (sdedr:define-multibox-size "RefDefMB.Channel" 0.1 0.1 0.01 0.050.050.001 1 1 -1.5 ) • (sdedr:define-multiboxplacement "PlaceMB.Channel" "RefDefMB. Channel" "RefWin. Channel" )


87

4/2/2009

Build Mesh

The corresponding Scheme command is: • (sde:build-mesh "mesh" "-P" "3dmos") In the TOR format, the Scheme command for the meshing operation is: • (sde:build-mesh "mesh" "-P -F tdr" "soifet_msh") Note: use SNMESH (doping profile [tdr] can be viewed with option in postprocess)



88

4/2/2009

Sprocess simulation by Ligament • Sprocess > properties: select "Use Ligament" option on the dialog box • Edit Input> Ligament flow: set up a process flow • Ligament Workspace: refer to on-line training material "Ligament 0.7 Ligament Workspace" • On-line training material provide a detail introduction in chapter "Ligament"

synopsys' Predictable-Success

Ligament • Use Ligament to Build up the Device Structure

........... bO~On


89

4/2/2009

Environment & Substrate Names

Name

S'-:;::::i'Flow"-

i-:R~

t--~ substrate 9--!i£" well

~"")trtle'

title dop~

: boron

concen

f-{-) grid i-(-) debug

H-) chec.~'.d

43-:!~ Gox e-!~ Po!yGate

e-!Ei"

LOO

e.-:.!~ S.pacer l3-!~ SO e-=!~ Metal r!1t- struc 9-!~

: Boolean . Soolean

true false

:-~:~~:r .~~: string

}-(-)

Boolean :"Dlstarlce

: Sjde

; GrId

d~pant

boron

concen

r3Jse 5

"um Ad:-'3!.lCed~al!br:·

Y-:-) tsupre~_min_hOrI.z~ Dj~tance_.

0.1

Name

"e

"0011 'n@oode@ \@node@ front

'O.S 0.1

0.5

Concentration

i..-.{-) resistivity 1-{-) orientation

Y-ltype

boron

1e15

Resistivity

o

Number

100

Type

:um

Value

Type

"O'opa"t

'~:'j"dopa~t''-(-) concentration

# 2D nMOSFET save

false false sprocess

8--(-) gnd_refinement _ :'~ridff~! ~-:-(-) ~~pr~~..~~I~,..velf:. Q~aJ}~~_ tsuprem4_delta_ho~ Distance r--(-) tsuprem4_mln_vertl~ Distance

r--<-)

Un"

20 -n~iOSFET

we

~~=~ :~:~~ q;~~~~ j--(-) node ..

1--<-) uSer-9r1 d

iii

Boolean

Boolean

H-) sIde g~p'hjcs . r-:--<-) depth

extraccsa. . _e .

Value

:... __ ~y~e

·········S·tnn·g·_·_·-

l-:-::-(-:l s.ave

:.4! ~.9. nM.OSFET ~a~

/emJ ohm-em

defautt


Well Implant, Gate Oxide, PolyGate A .. 20 nMOSFET

material

conce

·OXide····

thicknes

sp~cies

""biiro"Tl

species

boron boron

time

O.~_~ec _

:-sp~"a~s

~atefjai'v

save.

boron

oxide

doss······ dose dose

"t~~p.~ra

thicknes

.- Gate te~per

10 min ··S mln~-

tempe

t~'mp~~

~.P.~~.~s

'iext

'dia-s'

pOlyGat~ poly.

...~P'!p'g.~.~

mate~ii1 material

poly

'matertaJ

oxide

thicknes

10 min

1~~P~~

resist

thicknes

ttircknes


90

4/2/2009

LDD, Nitride Spacer, Source/Drain, Metal Pad Names 8--~Flow

. ,...._.~9_.. _.._. ..-.. -~~~!~. -~ ..;

f..-·B environment ;-~4,l

substrate

title

dopa f'!1

AI

., 20 nMOSFET save boron concent

13---!~ well

13-'}; Gox

e-·!.F Po!yGate S,..!~

LDD

1 ~~. ~omment

sp~-;:Ies.

boron

dose

species

tioron

. dose

specie:s.

boron ~or'~n

. ~C?s~

,

J--

l--~jnsert

r-~~ Implant

~~.tmp!?O~

L-Jl~ anneal ~··:-T-!.~ Spacer

I. ~comm~nt deposit

I, 1

... LDD

dlDS

r-~imp!~t r--~ implant ~ implant

1

I

text

:-----;}> Insert

etch

l--"T

~e1Ch

$p~.cle_~ sp~c!.es

text material

"dose

spraees

dlos

,time

spracss

arsenic 0.02 sec

dose te_mp:9:~

. ~pacer

material

nitride nitride

matedai

oxide

text

SD

thlCknes thlcknes thicknes

&.T!~ SO

1 -}--c;D comment 1 }-~insert

I

}--~

!mplant

L_,..6"", anneal

~~~h

~~depOSjt

f-/;5 rnsert : r--i!, etch

! l~~etch

8--!a- struc

9--!~

diDS

sproees

arsenic 0.02 sec

tempera:

material

oxide aluminum

: 1hlcknes thicknes

dlos matenal material

aluminum resist

thlcknes thicknes

species time material

dose

sproc.es

synopsys' Pred lctable SUccess

extract_save

Environment • Title:

20 nMOSFET 0.18

• Simulator: sprocess • Region:

0011

Substrate • Dopant: boron • Concentration: 1e15 Icm3 synopsys' Predictable Success

91

4/2/2009

Well • Deposit:

oxide, 0.01 um

• Implant: • Boron, does 2e13/cm2, energy 200 keV • Boron, dose 1e13/cm2, energy 80 keV • Boron, dose 6e12/cm2, energy 25 keV

• Anneal: 0.3 sec, 1050 C, 1 atm, Nitrogen 100% • Etch: oxide, strip


Gate Oxide • Anneal: 5 min, 650-850 C, 1 atm, Nitrogen 100% • Anneal: 10 min, 860 C, 1 atm, Oxygen 100% • Anneal: 5 min, 850-650 C, 1atm, Nitrogen 100% • Grid Remesh (Insert) • grid remesh • select z=Boron • layers


92

4/2/2009

Poly Gate • Deposit: poly, 0.18 urn • Mask (insert): • mask name=gate_mask left=-0.1 right=\$lgate/2 negative • photo mask=gate_mask thickness=2

• Etch: poly, 0.2 urn, anisotropic • Etch: resist, strip • Etch: oxide, 0.1 urn, anisotropic • Anneal: 10 min, 900 C, 1 atm, nitrogen 5 IImin, oxygen 5 IImin


LDD • Remesh (insert) • refinebox silicon min= {O.O O.S*\$lgate-O.OS} max= {0.06 0.S*\$lgate+0.04} xrefine= {O.01 0.01 O.01} yrefine= {O.01 0.003 O.01} add • refinebox remesh • transform reflect left

• Implant: • boron, Dose=\$HaloDose/4 rotation=O • boron, Dose=\$HaloDose/4 rotation=90 • boron, Dose=\$HaloDose/4 rotation=180 • boron, Dose=\$HaloDose/4 rotation=270

cm2, energy= \$HaloEnergy keV, tilt=30, cm2, energy= \$HaloEnergy keV, tilt=30, cm2, energy= \$HaloEnergy keV, tilt=30, cm2, energy= \$HaloEnergy keV, tilt=30,

• Cut (insert): transform cut location=O.O left • Implant: arsenic, 1e15 cm2, 20 keV • Anneal: 0.02 s, 1050 C, 1 atm, nitrogen 100%


93

4/2/2009

Spacer • Deposit: nitride, 60 nm • Etch: nitride, 84 nm, anisotropic • Etch: oxide, 10 nm, anisotropic


Source/Drain • Mesh refine (insert) • refinebox silicon min= {O.O \$lgate/2-0.02} max= {0.22 \$lgate/2+0, 15} yrefine= {0.02 0.01 0.02} add • refinebox remesh

• Implant: arsenic, 4e15 Icm2, 30 keV • Anneal: 0.02 s, 1080 C, 1 atm, nitrogen 100%


94

4/2/2009

Metal • Etch: oxide, 5 nm, anisotropic • Deposit: aluminium, 30 nm • Mask: • mask name=contacts_mask segments = {-O.1 \$lgate/2-0.005 \$lgate/2+0.1 \$ymax} negative • photo mask=contacts_mask thickness=2

• Etch: aluminum, 0.25 um, anisotropic • Etch: resist, strip


Finalise (insert) • • • • • • • • • • • • • • • • • • •

transform clip min= {-1 -1} max= {2 10} contact name=gate point x=-O.2 y=O.001 replace contact name=drain point x~0.02 y=\[expr \$ymax - 0.001\] replace contact name=substrate box silicon xlo=1.5 ylo=O xhi=2.5 yhi=\$ymax set Ygox \~nterface oxide /silicon y = 0.001 \] set Ypol \~nterface poly /oxide y = 0.001 \] setYtmp \[expr\$Ygox + 0.005\] setTox \[expr\$Ygox - \$Ypol\] sel z = NetActive set Xgd \[interpolate x = \$Ytmp silicon val=1 e15\] set Xj \[interpolate y = 0.5"\$lgate+0.39 silicon val=1e15\] #set Lgeff x puts \"DOE: Lgeff\[format %.3e \[expr 2.0*\$Xgd\]\]\" #setXj x puts \"DOE: Xj \[format %.3e \$Xj\]\" #setYgox x puts \"DOE: Ygox \[format %.3e \$Ygox\]\" #setTox x puts \"DOE: Tox \[format %.3e \$Tox\]\"


95

4/2/2009

synopsy~r Predictable Success

cvQVrfWrve: long channel transistor Bottom region: Good fit indicates. that the channel profile is correct Accumulation region:

2e-14~--------~--------~~Jr--lL

Inversion region: Used to adjust the doping concentration in poly-SiJicon.

______________J

Good fit indicates correct oxide thickness. ~

Threshold voltage:

~ le-14

yDopant concentration at the gate oxide interface )- Interface charges

-2

-1


96

4/2/2009

C-V Device Simulation • Small-signal AC analysis (2007.12 P.183) • AC simulation are performed in mixed mode (2007.12 P.163).

• Extract conductance and capacitance of each node, and output matrix A (conductance) and matrix C (capacitance). • j = Yu = Au + iwCu • j is the vector containing the small-signal currents at all nodes.

• u is the corresponding voltage vector.


C-V Simulation Command File Device "device1"

{

File { "define device input and output file"} Electrode { "same with IV simulation"} Physics { "same with IV simulation and tum on minority carrier quantum potential equation for accumulation side CV extraction" }

} File

{ "define system output file"}

Plot

{ "same with IV simulation"}

Math

{ "same with IV simulation" }

System { "based on previous device1 and the voltage source of each node construct a simple circuif' }

Solve

{ "set bias sweeps sequence, solve transport models and extract AC parameters" }

synopsys' Predlctable$uccess

97

4/2/2009

c-v Device Simulation

Result

• Cgg: gate node capacitor • Ccg: drain node + source node

1e-15

• Cbg: substrate node Cgg = Ccg + Cbg

1e-013 -1

"

Gate Voltage (V)

-~

~ 5e-014

v

o

-1


Convergence - Breakdown Device Simulation • n-th step converge, next l1V n+1 > l1V n • n+1-th step diverge, then l1V n+1 = l1V n/2 • The voltage step will be divided by 2 again and again, until it converges or until it reaches a minimum step that we define in the command file.

10

,_-----VL: ,


98

4/2/2009

Breakdown Device Simulation • An approach to solve divergent and snapback issues • Introduction please refer to on-line training material "SDevice section 0.1 MOSFET Breakdown Simulation" ~...10S

Breakdown

Vd_outer (force)

rl l- - - - , Drain Voltage (V)


Breakdown Device Simulation • Modify SDevice command file • Turn on Avalanche and Band2Band model • Solve dual carrier transport • Detail please refer to 90nm nMOS breakdown example.


99

4/2/2009


Preparation • Copy the 0.18um_nMOS project and rename it as 90nm_nMOS, then clear up all the output files • SProcess uses the -f option to speed up the simulation time for structure verification • -f option skip diffusion and monte carlo implant step • Refer to SProcess manual 2007.12 P .52 • It will cause some parameter extraction failure because of a missing net doping profile. When we are sure the device structure is correct, we should remove the -f option to do a complete simulation.

synopsys' PrecfictableSucce$s

100

4/2/2009

Reference: SProcess, pS2 • Command-line options Option

--Fa"n!ode

Shottnam~

Function

-b

Switcb off graphics.

-f

Gt."llC'~tI.c stJ:ucturc~

00 ditru};ton.. n(l rncimpiUlll. and so

Oil. --GENES.IS€..~;:

-11

SwItch off Jot.:

fil~

--pdb

-p

Run F"J.t"::U11Ct.:.(

Dat.tt'ta;;~

th~y ,:tfc s>.!'t

creation.

Browser 'Showing par:l.mct€'ls 3.~

duriUf: nll1-tim~

11lA.~ludtt

dcia.ult pafatnt.!'tr.:t"'3

and pafamc("'" ffOOl the input 111< if ~p~ifi.ed.


Structure Comparison • 0.18um nMOS

• 90nm nMOS


101

4/2/2009

Process Comparison • 0.18um nMOS

• 90nm nMOS

WeliNth implant & anneal


Boron dose=2e13 energy=200 till=O rol=O Boron dose=l e13 energy=80 till=O rol=O Boron dose=6e12 energy=25 till=O rol=O diffuse temp=1050 time=0.3

Boron dose=2e13 energy=200 till=O rot=O Boron dose=le13 energy=80 till=O rot=o Boron dose=8e12 energy=30 till=O rol=O diffuse temp=l 050 time=0.3

Gox-33A

Gox-18A

diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=10 02 1atm diffuse temp=850 ramprate=-O.6666 time=5

diffuse temp=650 ramprate=0.6666 time=5 diffuse temp=850 time=l 0 02=0.8 N2=9.2 1atm ../ diffuse temp=850 ramprate=-O.6666 time=5

POLY height = O.18um

POLY height = O.15um

deposit poly type=isotropic thickness=0.18

deposit poly type=isotropic thickness=0.15

Halo/LDD implant & anneal


Boron dose=le13 energy=15 till=30 I roI=0,90,180,270 Arsenic dose=le15 energy=20 tilt=O rol=O diffuse temp=l 050 time=0.02

Boron dose=2e13 energy=12 tilt=30 I rot=d,90,180,270 Arsenic dose=l e15 energy=5 tilt=O rot=o diffuse temp=l 020 time=0.03

synopsy:r Predictable Success

Process Comparison • 0.18um nMOS

• 90nm nMOS

Nitride Spacer

ONO Spacer

deposit nitride type=isotropic thickness=0.06 etch nitride type=anisotropic thickness=O.084 etch oxide type=anisotropic thickness=O.Ol

deposit oxide type=isotropic thickness=0.005 deposit nitride type=isotropic thickness=0.015 deposit oxide type=isotropic thickness=0.06 diffuse temperature=720 time=20 etch oxide type=anisotropic thickness=0.1 etch nitride type=anisotropic thickness=0.03 etch oxide type=anisotropic thickness=0.015 #- consider native oxide - - - - - - deposit oxide type=isotropic thickness=0.0015

Source/Drain implant & anneal


implant Arsenic dose=4e15 energy=30 till=O rot=O implant Phosphorus dose=1e15 energy=6 till=O rol=O implant Arsenic dose=5e15 energy=30 tilt=O rol=O diffuse temp=1080 time=0.02 diffuse temp=l 050 time=0.03


102

4/2/2009

SProcess Mesh Comparison • 0.18um nMOS

• 90nm nMOS

==--------~~-

---------~

SDevice Mesh Comparison • 0.18um nMOS

_'--1

• 90nm nMOS

=-=-=c;;-----,,------:

103

4/2/2009

Id_Vg Curve Comparison • 90nm nMOS

• 0.18um nMOS

• Vdd=1.2v; Vds=O.05v

• Vdd=1.5v; Vds=O.05v O.18um 0.0001

8e-05

VS.

90nm nMOS IdVg Vds=O.05 0.0002

.---gm_0.18um ·---gm_90nrn -ld_0.18um -ld_90nm ;

0.00015 (!l

E

3

6~05

~

::!:!

00001 4~

~ <'

~ c·

3

~

5~05

2e-05

0 +-~~~~~~r-r-~~~~~-+O 0 1.5 0.5

synopsys'

Vg (volt)

PredlctableSuccess

Hints • Need to translate the process conditions into correct syntax of Sprocess. • Poly height has been changed from O.18um to O.15um, need to update the coordinate of gate contact in Sprocess. • After finish the modification of Sprocess, whole simulation flow (Sprocess, SSE, Sdevcie, Inspect) can be executed well. • In Sprocess, fine tune LOO & SO refine-box to get a more accurate doping profile. • In SSE, fine tune variable "PNres" to optimize the mesh of LOO and SO junction to get a more accurate Sdevice simulation result.


104

4/2/2009

Modify nMOS Template to pMOS • SProcess: change to pMOS process condition • SDE: change PLOY dopant type from N-type to P-type • SDevice • Change majority carrier from electron to hole and related models. (Exchange e and h in input file in most cases.)\ • Biasing Condition

• Inspect: change device type and extraction region for "Extraction library"


Structure Comparison • 90nm nPOS

• 90nm nMOS 1.....


105

4/2/2009


Process Comparison • 90nm pMOS

• 90nm nMOS



Phosphorus dose=2e13 energy=3S0 tilt=O rot=O Phosphorus dose=1 e13 energy=200 tilt=O rot=O Arsenic dose=4e12 energy=100 tilt=O rot=o diffuse temp=1 OSO time=0.3

Boron dose=2e13 energy=200 tilt=O rot=O Boron dose=1 e13 energy=80 tilt=O rot=o Boron dose=8e12 energy=30 tilt=O rot=O diffuse temp=1 OSO time=0.3



Arsenic dose=2e13 energy=80 tilt=30 I rot=O,90,180,270 BF2 dose=6e14 energy=3 tilt=O rot=o diffuse temp=1 020 time=0.03

Boron dose=2e13 energy=12 tilt=30 I rot=O,90,180,270 Arsenicdose=1e15 energy=5 tilt=O rot=O diffuse temp=1020 time=0.03



implant Boron dose=1e1S energy=3 tilt=O rot=O implant Boron dose=Se13 energy=6 tilt=O rot=O diffuse temperature=10S0 time=0.03

implant Phosphorus dose=1e15 energy=6 tilt=O rot=O implant Arsenic dose=5e15 energy=30 tilt=O rot=O diffuse temp=1050 time=0.03

Structure Extraction


set Xgd Dnterpolate x = $Ytmp silicon val=-1e15] set Xgd Dnterpolate x = $Ytmp silicon val=1e15] set Xj [interpolate y = 0.5*$lgate+0.39 silicon val=-1e15] setXj Dnterpolate y = 0.5*$lgate+0.39 silicon val=1e15]

synopsys' Predict3bleSuccess

106

4/2/2009

Other Parameters • 90nm pMOS

• 90nm nMOS

Poly Doping

Poly Doping

(sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )

(sdedr:define-constant-profile "Const.Gate" "BoronActiveConcentration" PolyDop )

Biasing

Biasing

Goal { Name="drain" Voltage=-@Vds@ } Goal { Name="gate" Voltage=-@Vdd@ }

Goal { Name="drain" Voltage=@Vds@ } Goal { Name="gate" Voltage=@Vdd@ }

Coupling

Coupling

Coupled { Poisson Hole hQuantumPotential }

Coupled { Poisson Electron eQuantumPotential }

Inspect

Inspect

setType pMOS set SS [ExtractSS

SS

set Type nMOS IdVg($N) [expr $Vti+O.0511 set SS [ExtractSS

SS

IdVg($N) [expr $Vti-O.0511



107

4/2/2009

Outline • How to register a SolvNet account? • What kind of TCAD resources we can find on SolvNet? • Software, • Manual • Release Notes • TCAD Example updates


SolvNet Website

http://solvnet.synopsys.com/

synopsys' Wek:o.me To Syn0:p-sysSlg" In

I ~~~'--~~', L ...

)u<>-••.,~oo"",1·"-'¥'"'4

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_..,

'.r"·;;

5.:~¥·~+;:.u.,."....!:;',;j"""""V.,.M.",~~~"""","f;t_.

Apply an account firstly Login


108

4/2/2009

SolvNet Register

synopsys'

New User Registration


SolvNet Register O::.rl;-

::)~

6

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;.$. . .

":1'

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109

4/2/2009

SolvNet Register -----------'3 cJ

Isynopsys

Go

50;,,["2,

r'jj/':T !-,i§iitr-tttm1ilti!MtHHS_ _4#iiMillli@[email protected] i

New Use,. Registration

i

Important: Please Read Before Registering To. access to all Synopsys Online Services. ,;ou must provlde an serdees include ~

k~r"·,,,

S'te lC

In

the field below These

.

SoM'·Jet Know1e::!ge Base of self-help documents

~

OnGne Product DocumentatlOn • SmartKe\, license Retrie-.C31

.,. Electronic Software DO'A
Add Another Site

You can find your site 10 from your license file


SolvNet Register syn0psys,

50ivN",


Thilnk you ror submitting your SolvUet registration. Your registration is not yet complete. Since you are requesting access to confidential Synopsys infurmati::m, ",e wll1 need to 'ie-rifj your site infotrro3tion_ You will recerve an email asking you to confirm your email address. Please be sure to read and

act on that message

Applicant will receive a confirmation letter Registratiqn Help


110

4/2/2009

SolvNet HomePage

search TCAD documents by keyword

> VI."!"" ST AR<;

> My SubscriplJor:lS > ttv Product!>

ViHATS Nfj."'1 ON SOLVNH {'<';"-">~~~"S'I'~

c"",: ,-, ;" ;)!~<'><

. TECHNICAl.. NEWS A.ND EVENTS .' r-a,><,';-'>

Th~ Soh-Net Do'hnlo.ad Center f<:!atur,:-s a redeslqned int~".! that dispLays the lat~st ,jownl.r:.ad information for "our S..nopsvs

products in a =entraliziXIlocation. ..... ,-" - - . .:. ~

S.?'MC for

?I~

~.

"):H:i~;;

Pap~s

-:. ,':::- !; ''-',- Ie:' .,". J

i~:i~~~· ~~\~~E~; ::;~l~;~~\:~~;~{"g

mcduJes tv IEam about r~le3s-e .:nh3~m.:nts to DFT, Star RCXT, T'2trar-laY", SSD Compiier, DesliJf1 CQmpd",r, Ie Compder. NanoTime, Pnm~Tlm-=, Pru.neTlflle ~·X, and ~!J.,.,~r Compd':"!f.


Predictable Success


111

Untitled We will be conducting a TCAD Sentaurus product tralnlng in our office on the 8th and 9th of April in our synopsys singapore training center: 300 Beach Road, #31-06, The concourse, singapore 199555. The agenda are as follows: Title: Sentaurus TCAD Training for CMOS Application Day 1:

Day 2:

Sentaurus TCAD Overview Sentaurus workbench Sentaurus Process 1D & 2D Tecplot SV Sentaurus Structure Editor - Building Meshes Sentaurus Device I-V simulation Inspect 90nm nMOSFET Exercise c-v Device Simulation Breakdown Device Simulation pMOSFET Device Simulation Ligament Introduction SolvNet Resources

.------------------~-~~---.-

iC

t

a t

7i

o

.Page 1

Sentaurus TCAD Training for CMOS Application (Synopsys_2009) _ OCR

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