Graphs, descriptions, and discussion of semiconductor fundamentals. Mobility and fermi energy levels included. Interesting results after using Matlab.Full description
Investigatory project on Semiconductorsr for Class XII CBSE. It contains acknowledgement and Certificate
Physics Semiconductors Project
Full description
Power Semiconductor basics
Power Semiconductor basics
Descrição completa
Descripción: Fce Pratice Tests Mark Harrison
Descripción: IELTS Cambridge Practice Test 3. Preparatory book for the IELTS exam. Practice Test to determine whether your English is at the required level. Consists of six moduls. Listening, grammar, writing, ...
Electronica
Electronica
Guitar
Guitar
Descripción: excelente gramática da língua inglesa.
Guitar
epso questions
excelente gramática da língua inglesa.
CSAT
udjdsajkelo
LECTURE BASED PROBLEM SHEET
TOPIC: SEMICONDUCTORS-I
Q.1.
Q.2.
In n-p-n transistor circuit, t e collector current is 10 mA. If 90% o the electrons emitted reach the collector (a) The emitter current will be 9 mA (b) The emitter current will be 11 mA (c) The emitter current will be 1 mA (d) The emitter current will be 0.1 mA
(c)
(b)
Q.7.
(d)
(b) N R gate (d) O gate
The following truth-table belongs to which one of the four gates A B X 1 1 0 1 0 0 0 1 0 0 0 1 (a) OR (c) XOR
A transistor is connected in common emitter configuration. The ollector supply is 8V and the voltage drop across a resistor of 800 i the collector circuit is 0.5 V. If the current gain factor () is 0.96, then base current will be (a) 24 (b) 25 (c) 26 (d) 27
Q.4.
In a common base amplifie circuit, calculate the change in bas current if that in the collector current is 2 mA and =0.98 (a) 0.04mA (b) 1.96 m (c) 980mA (d) 2mA The arrangement shown in fig. performs the logic function of
(a) AND gate (c) OR gate
ONI KAKATI
Q.3.
Q.6.
(a) XOR gate (c) AND gate
The current relationship between two current gains and in a transistor is (a)
Q.5.
FACULTY:
(b) N ND (d) N R
Q.8.
Which of the following semiconductor diodes is reversed bias ed?
Q.9.
In a p-n junction havi g depletion layer -6 of thickness 10 m, th potential difference across is 0.1 V. The electric field is (a) 107 V/m (b) 10-6 V/m 5 -5 (c) 10 V/m (d) 10 V/m
Q.10.
The current voltage characteristic of a pn junction diode is represented by the graph
(b) NAND gate (d) XOR g te
A truth table is given below. Which of the following has this type f truth table A 0 1 0 1
B 0 0 1 1
X 1 0 0 0
(a) I
(b) II
(c) III (d) IV
Career Point, G uwahati centre, Bora Service Bye Lane, Ph: 0361-2466191
Trusted by over 1 million members
Try Scribd FREE for 30 days to access over 125 million titles without ads or interruptions! Start Free Trial Cancel Anytime.
Trusted by over 1 million members
Try Scribd FREE for 30 days to access over 125 million titles without ads or interruptions! Start Free Trial Cancel Anytime.
Q.11.
The correct symbol for zen r diode is
Q.12.
In an n-p-n transistor circui , the collector current is 10mA. If 90% of the electrons emitted reach the collector
Q.15.
The fig shows the wa eforms for two inputs A and B and th t for the output Y of a logic circuit. The logic circuit is
(a) an AND gate gate (b) n OR gate (c) a NAND gate (d) NOT gate
(a) the emitter current will e 9 mA (b) the emitter current will e 11 mA (c) the base current will be 1 mA (d) the base current will be -1 mA Q.13.
What is the voltage gain in a common emitter amplifier, where imput resistance is 3 and load re sistance 24? (Take =06) (a) 8.4 (b) 4.8 (c) 2.4 (d) 1.2
Q.14.
The following configuratio of gate is equivalent to