1. Dimensions for all drawings are in inches (mm). 2. Tolerance Tolerance of ± .010 ( .25) on all non-nominal dimensions unless otherwise specified.
EMITTER
DESCRIPTION The QSC112/113/1 QSC112/113/114 14 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.
FEATURES • Tight production distribution. • Steel lead frames for improved reliability in solder mounting. • Good optical-to-mechanical alignment. • Plastic package is infrared transparent black to attenuate visible light. • Mechanically and spectrally matched to the QECXXX LED. • Black plastic body allows easy recognition from LED.
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112 ABSOLUTE MAXIMUM RATINGS
QSC113
QSC114
(T A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260 for 10 sec
°C
Collector-Emitter Voltage
VCE
30
V
Emitter-Collector Voltage
VEC
5
V
Power Dissipation(1)
PD
100
mW
1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs.
ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER
TEST CONDITIONS
(T A = 25°C) SYMBOL
MIN
TYP
MAX
UNITS
!PS
880
—
nm
"
— —
±8
—
Deg.
VCE = 10 V, Ee = 0
ICEO
—
—
100
nA
Collector-Emitter Breakdown
IC = 1 mA
BVCEO
30
—
—
V
Emitter-Collector Breakdown
IE = 100 µA
BVECO
5 1
— —
— 4
V
IC(ON)
2.40
—
9.60
mA
4.00
—
—
VCE(sat)
—
—
0.4
tr
—
5.0
—
tf
—
5.0
—
Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current
On-State On-State Collector QSC112 On-State On-State Collector QSC113 On-State On-State Collector QSC114 Saturation Voltage Rise Time Fall Time
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Ee = 0.5 mW/cm 2, VCE = 5 V (5) Ee = 0.5
mW/cm 2,
IC = 0.5 mA(5) VCC = 5 V, R L = 100
#
IC = 2 mA
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DS300358
PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112
QSC113
QSC114
Figure 1. Light Current vs. Radiant Intensity 102
Figure 2. Angular Response Curve
VCE = 5V GaAs Light Source
110
90
80
70
120
) A m ( t 101 n e r r u C t h g i L ) N O ( C I
100
60
130
50 40
140 150
30 20
160
100
10
170 180 1.0 10-1 0.1
0.6
0.8
0.4
0.2
0.0
0.2
0.4
0.6
0.8
0 1.0
1 2
Ee - Radiant Intensity (mW/cm )
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
101
101 Ie = 1mW/cm 2 t n e r r u 0 C 10 t h g i L d e z i l a m r -1 o 10 N L I
) 100 A n ( t n e r r u C 10-1 k r a D O E
C I 10-2
Ie = 0.5mW/cm 2 Ie = 0.2mW/cm 2 Ie = 0.1mW/cm 2
Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC
10-3 0
-2
5
10
15
20
25
30
10
0.1
1
10
VCE - Collector-Emitter Voltage (V)
VCE - Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature 104
t n 103 e r r u C k r a 2 D 10 d e z i l a 1 m r 10 o N O E C
I
Normalized to: VCE = 25V
VCE = 25V
o
TA = 25 C
VCE = 10V
100
10-1 25
50
75
100
o TA - Ambient Temperature ( C )
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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSC112
QSC113
QSC114
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user.
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2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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