1989 Small Signal Transistors 1ed

SMALL SIGNAL TRANSISTORS DATABOOK

1st EDITION

DECEMBER 1989

USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED

SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITIEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: 1. Life support devices or systems are those which (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided with the product, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can reasonably be expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

TABLE OF CONTENTS

INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23

DATASHEETS PACKAGES

Page

4

5

7 9 14 24 25 30

35

419

3

INTRODUCTION

This databook contains datasheets covering the range of discrete devices for small signal consumer, industrial and professional applications, including RF devices. A selection guide by characteristics and, for RF devices, by application, is provided to enable fast identification of the most suitable devices for your application. The information on each product has been presented in order that the performance of the product can be readily evaluated within any required equipment design.

4

ALPHANUMERICAL INDEX

Type

Page

Type

Page

Type

Page

BC107 ..... BC108 ............ BC109 ........ BC119 ............ BC139 ........ BC140 ............ BC141 ........... . BC142 ............ BC143 ............ BC160 ........... BC161 ............ BC177 ............ BC178 ............ BC179 ............ BC286 ............ BC287 ............ BC297 ............ BC298 ............ BC300 ............ BC301 ............ BC302 ............ BC303 ............ BC304 ............ BC377 ............ BC378 ............ BC393 ............ BC394 ............ BC440 ............ BC441 ............ BC460 ............ BC461 ............ BC477 ............ BC478 ............ BC479 ............ BCY58 ........... BCY59 ........... BCY70 ........... BCY71 .......... . BCY72 .......... . BCY78 .......... . BCY79 .......... . BF257 ............ BF258 ............

37 37 37 43 45 49 49 53 55 57 57 61 61 61 65 67 69 69 73 73 73 77 77 81 81 83 87 91 91 93 93 95 95 95 101 101 105 105 105 111 111 117 117

BF259 ............ BF457 ............ BF458 ... BF459 ............ BF657 ............ BF658 ............ BF659 ............ BFR17 ............ BFR18 ............ BFR36 ............ BFR97 ........ BFR98 ............ BFR99 ............ BFR99A .......... BFW16A .......... BFW17A .......... BFW43 ........... BFW44 ........... BFX37 ............ BFX38 ............ BFX39 ............ BFX40 ............ BFX41 ............ BFX48 ............ BFX73 ............ BFX89 ... BFX90 ............ BFX91 ............ BFY50 ............ BFY51 ............ BFY52 ............ BFY56 ............ BFY56A .......... BFY64 ............ BFY76 ............ BFY90 ............ BSS26 ............ BSS71S .......... BSS72S .......... BSS74S .......... BSS75S .......... BSV15 ............ BSV16 ............

117 121 121 121 125 125 125 129 133 137 369 403 143 145 151 151 155 155 159 163 163 163 163 167 171 177 181 181 187 187 187 191 191 195 199 177 203 207 209 211 213 215 215

BSX19 .... ........ BSX20 ............ BSX26 .... ....... BSX28. ....... ... . BSX29. ... . .... BSX32. ...... ... . BSX33. . .......... ...... BSX39 .... BSX45 .......... BSX46 ........... BSX88A . ........ BSX93 ....... ." . BSY53 ....... .. .. . BSY54 ...... . ..... BSY55 ....... . .... BSY56 ............ 2N708 ............ 2N718A ........... 2N720A ........... 2N914 ............ 2N918 ..... ...... 2N930 ............ 2N956 ............ 2N1613 ........... 2N1711 ........... 2N1893 ........... 2N2102 ........... 2N2218 ........... 2N2218A .......... 2N2219 ........... 2N2219A .......... 2N2221 ........... 2N2221A .......... 2N2222 ........... 2N2222A .......... 2N2368 ........... 2N2369 ........... 2N2369A .......... 2N2484 ........... 2N2845 ........... 2N2857 ........... 2N2894 ........... 2N2904 ...........

219 219 223 227 231 235 239 243 247 247 251 255 259 259 263 263 267 269 273 275 279 283 269 285 285 289 293 295 297 295 297 295 297 295 297 303 305 307 311 315 319 321 325

ru SGS-THOMSON ~I INIilU©OO@~~~©"ITOO@;i!lU©\\j

5

ALPHANUMERICAL INDEX

6

Type

Page

Type

Page

2N2904A .......... 2N2905 ........... 2N2905A .......... 2N2906 ........... 2N2906A .......... 2N2907 ........... 2N2907A .......... 2N3013 ........... 2N3014 ........... 2N3019 ........... 2N3020 ........... 2N3053 ........... 2N3107 ........... 2N3108 ........... 2N3109 ........... 2N3110 ........... 2N3114 ........... 2N3137 ........... 2N3209 ........... 2N3250 ........... 2N3251 .. - _ .. .... . 2N3301 ........... 2N3302 ........... 2N3502 ........... 2N3503 ........... 2N3504 ........... 2N3505 ........... 2N3600 ........... 2N3700 ........... 2N3724 ........... 2N3725 ........... 2N3866 ........... 2N3930 ........... 2N3931 ........... 2N3962 ........... 2N3963 ........... 2N3964 ........... 2N3965 ........... 2N4013 ........... 2N4014 ........... 2N4030 ........... 2N4031 ........... 2N4032 ...........

327 325 327 325 327 325 327 331 333 335 335 337 339 339 339 339 343 345 321 349 349 353 353 357 357 357 357 171 359 361 365 369 373 373 377 377 377 377 381 385 389 389 389

2N4033 ........... 2N4035 ........... 2N4036 ........... 2N4037 ........... 2N4427 ........... 2N5109 ........... 2N5179 ........... 2N5320 ........... 2N5321 ........... 2N5322 ........... 2N5323 ........... 2N5415S ..........

389 393 397 401 403 407 411 413 413 415 415 417

I ill -:rI SGS·1HOMSON fiIIilU©rnI@~~~©~rnI@IllU©~

Type

I I

Page

I

I

PRODUCT GUIDE

7

SELECTION GUIDE General purpose in TO-39 TYPE

@

VCEO VCER· (V)

20 30 30 30 30 30 35 40 40 40 40 40 40 40 40 40 40 40 45 45 45 50 50 50· 50· 55 55 55 60 60 60 60 60 60 60 60 60 60 65 65 75 75 75 75 80 80 80 80 80 80 80 80

hFE

Ic

minimax

(mA)

60/40/-

150 150 150 150 150 150 150 150 150 150 500 100 500 150 150 150 150 150 150 150 150 500 500 150 150 100 150 100 150 150 150 150 500 100 500 100 150 150 150 150 500 500 100 100 100 150 150 150 150 100 150 150

401120 401120 100/300 100/300 301401120 401120 401120 40/240 40/250 40/250 50/250 501250 100/230 100/300 100/300 30/150 40/240 120/240 40/250 40/250 40/120 100/300 401401120 85/401120 401120 401240 401240 401240 40/250 40/250 100/300 100/300 100/300 401120 40/140 30/130

301130 40/851401120 401120 401120 401120 401240 100/300 100/300 100/300

@

VCE(sat)

NPN

PNP

leila (mA)

max (V)

BFY52 BFY51 2N2218 BSY53 2N2219 BSY54 BFY50 2N2904 2N2218A 2N3110 BC440 BC140 BC460 2N4037 2N3053 2N2905 2N2219A 2N3109 BFY56 BC304 BC302 2N5323 2N5321 2N1613 2N1711 BFX39 BFY56A BFX38 2N2904A 2N31 08 BC303 BC301 BC441 BC141 BC461 2N4032 2N2905A 2N3107 2N2102 2N4036 2N5322 2N5320 BFX41 BFX40 2N4031 2N1893 2N3020 BSY55 BC300 2N4033 2N3019 BSY56

0.35 0.35 1.6 1.2 1.6 1.2 0.2 0.4 1 0.25 1 0.35 typ 1 0.3 1.4 0.4 1 0.25 0.3 0.65 0.5 1.2 0.8 1.5 1.5 0.5 0.25 0.5 0.4 1.4 0.65 0.5 1 0.35 typ 1 0.5 0.4 1.4 0.5 0.65 0.7 0.5 0.5 0.5 0.5 5 0.5 0.6 0.5 0.5 0.5 0.6

150115 150/15 500/50 500/50 500/50 500/50 150/15 150/15 500/50 150/15 1000/100 500/50 1000/100 150/15 150/15 150/15 500/50 150/15 150/15 150/15

150115 500/50 500/50 150/15 150/15 500/50 150/15 500/50 150/15 150/15 150/15 150/15 1000/100 500/50 1000/100

..~ .,I SGS·THOMSON fiIilO©Iill~m,rn©1rIill@Ii:!O©i§i

500/50 150/15 150/15 150/15 150/15 500/50 500/50 500/50 500/50 500/50 150/15 500/50 150/15 150/15 500/50 500/50 150/15

iT

min

ts toft·

(MHz)

(ns)

50 50 250 100 typ 250 100 typ 60 200 250 60 50 50 50 100 100 typ 200 300 70 40 100 typ 100 typ 50 50 60 70 100 60 100 200 100 typ 75 120 typ 50 50 50 100 200 100 typ 60 60 50 50 100 100 100 50 80 typ 100 typ 120 typ 100 100 typ 100 typ

160 typ 160 typ 140 typ 80 225 1000·

-

850· 110

-

80 225 1000· 800· -

800' -

350 800' 350 80 -

-

850'

-

350 80

-

30' 700' 1000' 800' 350 350 350

-

350

-

Ptot (mW) 800 800 800 800 800 800 800 600 800 800 1000 800 1000 700 800 600 800 800 800 850 850 1000 1000 800 800 800 800 800 600 800 850 800 1000 800 1000 800 600 800 1000 1000 1000 1000 800 800 800 800 800 800 800 800 800 800

Page 187 187 295 259 295 259 187 325 297 339 91 49 93 401 337 325 297 339 191 77

73 415 413 285 285 163 191 163 327 339 77

73 91 49 93 389 327 339 293 397 415 413 163 163 389 289 335 263 73 389 335 263

9

SELECTION GUIDE General Purpose in TO-18 TYPE

@

VCEO VCER· (V) 25 25 30 30 30 30 40 40 40 40 40 40 40 40 40 45 45 50· 50· 55 55 60 60 60 80 80

Ic

hFE minImax

(mA) 10 100 150 10 150 150 150 150 10 10 100 10 150 150 10 150 10 150 150 50 150 150 150 150 150 150

50/75/260 401120 901100/300 100/300

401120 401120 50150/150 75/260 100/300 100/300 100/300 150/300 100/300 100/600 40/120 100/300 50160/180 401120 100/300 100/300 40/100/300

NPN

@

PNP BCY72

BC377 2N2221 BFX48 2N2222 2N3302 2N2906 2N2221A BCY70 2N3250 BC378 2N3251 2N2907 2N2222A 2N4035 2N3504 BCY71 2N718A 2N956 BSX33 BFR18 2N2906A 2N2907A 2N3505 2N720A 2N3700

VCE(sat) max (V)

lellB

(mA)

0.5 0.7 1.6 0.3 1.6 0.6 1.6 1 0.5 0.5 0.7 0.5 1.6 1 0.3 1.6 0.5 1.5 1.5 0.3 0.25 1.6 1.6 1.6 1.2 0.5

50/5 500/50 500/50 50/5 500/50 500/50 500/50 500/50 50/5 50/5 500/50 50/5 500/50 500/50 5015 500/50 50/5 150/15 150/15 150/15 500/50 500/50 500/50 500/50 50/5 500/50

fT

min (MHz)

200 300 typ 250 400 250 200 250 250 250 300 typ 300 200 300 450 200 200 60 70 60 60 200 200 200 400 typ

.

ts toll (ns)

350 160· 150· 80 225 350 200

-

200 80 225 150· 100· -

-

800· 80 80 100· -

Ptot (mW)

Page

350 375 500 360 500 360 400 500 350 360 375 360 400 500 360 400 350 500 500 500 500 400 400 400 500 500

105 81 295 167 295 353 325 297 105 349 81 349 325 297 393 357 105 269 269 239 133 327 327 357 273 359

Ptot (mW)

Page

300 300 300 300 360 360 360 360 300 300 360 360 300 360 360 360 360 360 360 360 360 360

37 37 61 61 101 111 95 95 283 37 111 101 61 377 129 377 311 199 377 159 377 95

Low level, low noise transistors in TO-18 TYPE

@

VCEO VCER· (V) 20 20 20 25 32 32 40 40 45 45

110/800. 200/800. 240/500. 125/500. 120/630 120/460 110/450 200/100/500 110/450.

45 45 45 45 60 60 60 60 60 80 80 80 • hIe

10

hFE minImax

120/460 120/630 125/500. 250/500 130/100/300 100/500 150/300 250/500 70/230 100/300 110/250 @

1 KHz

Ic

(mA) 2 2 2 2 2 2 2 2 0.Q1 2 2 2 2 0.01 0.01 0.01 0.01 1 0.01 0.01 0.01 2

NPN

@

PNP

BC108 BC109 BC179 BC178 BCY58 BCY78 BC478 BC479 2N930 BC107 BCY79 BCY59 BC177 2N3964 BFR17 2N3962 2N2484 BFY76 2N3965 BFX37 2N3963 BC477

VCE(sat) max (V)

(mA)

0.6 0.6 0.25 0.25 0.35

100/5 100/5 10/0.5 10/0.5 10/0.25

O.B

100/2.5 10/0.5 10/0.5 10/0.5 100/5

0.25 0.25 1 0.6 0.8 0.7 0.25 0.25 1 0.25 0.35 0.35 0.25 0.4 0.25 0.25

Ic/lB

100/2.5 100/2.5 10/0.5 10/0.5 1/0.1 10/0.5

1/0.1 1/0.1 10/0.5 50/5 10/0.5 10/0.5

fT

min (MHz)

100 100 200 typ 200 typ 200 typ 180 typ 150 typ 30 100 180 typ 200 typ 200 typ 50 70 40 60 100 50 40 40 150 typ

NF (dB)

10 4 4 10 6 6 6 4 3 10 6 6 10 2 3 3 2 4 4 3.5 3 10

SELECTION GUIDE Transistors for fast and ultra-fast switches in TO-18 TYPE

@

VCEO VCER' (V)

Ie

hFE minImax

12 12 12 15 15 15 15 15 15 15 15 15 15 20 20

40/120 40/120 401120 30/30/120

20 20 30 30 40 50

30/120 40/120 30/120 60/150 40160/150

(mA)

10 30 30 10 10 100 10 10 30 10 10 10 10 10 30 30 30 150 100 100 100

30/120 30/120 40/120 20160 20/60 251301120 30/120 301120 401120

@

PNP

NPN

BSX28 BSX29 2N2894 2N2368 BSX19 2N3013 2N708 2N914 BSX26 2N2369 2N2369A BSX20 BSX93 BSX88A 2N3209 2N3014 BSX39 2N2845 2N4013 BSS26 2N4014

VCE(sat) max (V)

Ic/le

fT

(mA)

min (MHz)

0.25 0.2 0.2 0.25 0.6 0.5 0.4 0.7 0.5 0.25 0.2 0.6 0.2 0.39 0.2

30/3 30/3 100/10 10/1 100/10

400 400 400 400 400

300/30 10/1 200/20 300/30 10/1 10/1 100/10 10/1 100/10 30/3

350 300 300 350 500 500 450 400 350 400

0.35 0.28 0.4 0.2 0.95 0.52

100/10 100/10 150/15 100/10 1000/100 500/50

350 350 350 300 250 300

ts , toll (ns)

13 90 90 10 10 18 75' 20 18 13 13 13 13 20 90 18 18 40' 60' 60' 60'

Ptot (mW)

Page

360 360 360 360 360 360 360 360 360 360 360 360 360 360 360

227 231 321 303 219 331 267 275 223 305 307 219 255 251 321

360 360 360 500 360 360

333 243 315 381 203 385

Transistors for fast and ultra-fast switches in TO-39

.

TYPE

@

VCEO VCER (V)

hFE minImax

(mA)

30 40 50

60/150 60/150 60/150

100 100 100

Ie

NPN

2N3724 BSX32 2N3725

@

PNP

VCE(sat) max (V)

0.2 0.5 0.52

fT

(mA)

min (MHz)

ts , toll (ns)

Ptot (mW)

Page

100/10 500/50 500/50

300 300

60' 60' 60'

800 800 800

361 235 365

Ic/le

11

SELECTION GUIDE HIGH VOLTAGE transistors in TO-1S TYPE

@

VCEO VCER" (V)

hFE minImax

(mA)

150 180 180 180 180

40130150180/300 80/300

10 10 10 10 10

200 200 200 200

40/250 50140/250 35/150

30 10 30 30

Ic

NPN

@

PNP

BFW43 BC394 BC393 2N3930 BFX90 BSS75S BSS71S BSS72S BSS74S

VCE(sat) max (V)

Ielis (mA)

fT min (MHz)

0.5 0.3 0.3 0.25 0.25

10/1 10/1 10/1 10/1 10/1

60 50 50 40 160

0.4 0.5 0.5 0.5

30/3 5015 5015 5015

50 50 50 50

Is loll " (ns)

-

P tot (mW)

400 400 400

Page

-

400

155 87 87 373 181

-

400 500 500 500

213 207 209 211

P tot (mW)

Page

400

HIGH VOLTAGE transistors in TO-39 TYPE

@

VCEO VCER" (V)

hFE minImax

(mA)

150 150 160 180 180

30140125/80/300 80/300

30 10 30 10 10

200 250 300

30/150 25/25/-

10 30 30

Ic

NPN

@

PNP

2N3114 BFW44 BF257 2N3931 BFX91 2N5415S BF258 BF259

VCE(sat) max (V)

Ielis (mA)

fT min (MHz)

1 0.5 1 0.25 0.25

5015 10/1 30/6 10/1 10/1

40 60 90 typ 60 40

2.5 1 1

5015 30/6 30/6

15 90 typ 90 typ

Is loft " (ns)

-

800

-

1000 700 700

343 155 117 373 181

-

1000 1000 1000

417 117 117

700

-

HIGH VOLTAGE transistors in TO-126 TYPE

@

VCEO VCER" (V)

160 250 300

12

hFE minImax

301301301-

Ic (mA) 30 30 30

NPN

BF457 BF458 BF459

@

PNP

VCE(sat) max (V)

1 1 1

6i ':11 SGS·THOMSON iIIlO©IRI@~~~©1JIRI@i:IlO©®

IclIs (mA)

50/10 50/10 50/10

fT min (MHz)

Is loft" (ns)

Ptot (mW)

Page

90 typ 90 typ 90 typ

-

1250 1250 1250

121 121 121

Transistor for Radio frequency application MAX RATING

~

Ptot

TRANS. FREQ.

TYPE/POLARITY MAIN FUNCTION

ft (MHz)

VeEO (V)

Ie (rnA)

30

25

200

BFY90

Wide Band VHF/UHF Amplifier

1400

30

25

200

BFX89

Wide Band VHF/UHF Amplifier

1200

12

50

200

2N5179

VHF/UHF Amplifier

(mW)

NPN

PNP

@

Ie (rnA)

GAIN

NOISE FIGURE NF

~

Ie and f

(dB)

(rnA)

(MHz)

25

5.5

2

25

7

2

1400

5

3

1.5

PG @

f

Package Page

(dB)

(MHz)

800

8

800

TO-72

500

7

800

TO-72

177

200

21

200

TO-72

411 279

177

15

50

200

2N918

High frequency oscillator and amplifier

900

4

5

1

60

21

200

TO-72

",CII

15

50

200

2N3600

High frequency oscillator and amplifier

850

5

5

1

60

21

200

TO-72

171

cro-t

25

50

225

BFR99

Wide band VHF/UHF amplifier

2000

10

3.5

3

800

10

800

TO-72

143

~~ ~O :!'!Z

25

50

225

BFR99A

Wide band VHF/UHF amplifier

2300

10

3.5

3

800

10

800

TO-72

145

25

150

700

BFW16A

CATV-MATV Amplifier

1200

150

6

30

200

800

TO-39

151

25

150

700

BFW17A

CATV-MATV Amplifier

1100

150

-

-

-

16

200

TO-39

151

30

200

800

BFR36

CATV High Gain Transistor

1400

70

4.5

70

200

16

200

TO-39

137

20

400

1000

2N5109

CATV High Gain Transistor

-

-

-

-

-

-

-

TO-39

407

20

-

1000

2N3137

R.F. Amplifier

750

50

4

30

200

7

250

TO-39

345

20

500

3500

2N4427

VHF Oscillator Power Amplifier

500

50

-

-

-

10

175

TO-39

403

50

-

-

-

10

400

TO-39

369

i~

§

•

!e

30

500

5000

2N3866

VHF Oscillator Power Amplifier

500

6.5

en

m r-

m

o-t

(5 Z G)

C

w

C m

CROSS REFERENCE

INDUSTRY STANDARD

B1-12 BC100 BC107 BC108 BC109 BC110 BC113 BC114 BC115 BC116 BC117 BC118 BC119 BC120 BC125 BC126 BC129 BC130 BC131 BC132 BC134 BC135 BC136 BC137 BC138 BC139 BC140 BC141 BC142 BC143

SGS-THOMSON

2N4427 BF259 BC107 BC108 BC109 BC394 BFY76 BFR17 BC140 BC160 BC394 BC107 BC119 BC119 BC377 BC298 BC107 BC108 BC108 BC109 BC107 BC107 BC140 BC139 BC140 BC139 BC140 BC141 BC142 BC143

BC144 BC145 BC147 BC148 BC149 BC150 BC151 BC152 BC153 BC154 BC157 BC158 BC159 BC160 BC161 BC167 BC168 BC169 BC170 BC171 BC172 BC173 BC174

14

SGS-THOMSON NEAREST

BC140 BC394 BC107 BC108 BC109 BC108 BC108 BC108 BC177 BC177 BC177 BC178 BC179 BC160 BC161 BC107 BC108 BC109 BC108 BC107 BC108 BC109 BFY76

PAGE

403 117 37 37 37 87 199 129 49 57 87 37 43 43 81 69 37 37 37 37 37 37 49 45 49 45 49 49 53 55 49 87 37 37 37 37 37 37 61 61 61 61 61 57 57 37 37 37 37 37 37 37 199

INDUSTRY STANDARD

BC177 BC181 BC182 BC183 BC184 BC185 BC186 BC187 BC190 BC192 BC200 BC204 BC205 BC206 BC207 BC208 BC209 BC210 BC211 BC212 BC213 BC214 BC215 BC216 BC218 BC220 BC221 BC222 BC223 BC224 BC225 BC226 BC231 BC232 BC236 BC237 BC238 BC239 BC250 BC251 BC252 BC253 BC254 BC255 BC256 BC257 BC258 BC259 BC260 BC261 BC262 BC263 BC266

SGS-THOMSON

SGS-THOMSON NEAREST


PAGE

61 61 37 37 37 73 61 61 37 69 61 61 61 61 37 37 37 81 49 61 61 61 69 69 37 37 69 81 81 95 95 73 69 81 87 37 37 37 61 61 61 61 87 87 95 61 61 61 61 61 61 61 95

CROSS REFERENCE

INDUSTRY STANDARD

BC267 BC268 BC269 BC270 BC271 BC272 BC280 BC281 BC282 BC283 BC284 BC285 BC286 BC287 BC294 BC295 BC297 BC298 BC300 BC301 BC302 BC303 BC304 BC307 BC308 BC309 BC310 BC312 BC313 BC315 BC317 BC318 BC319 BC320 BC321

SGS-THOMSON

SGS-THOMSON NEAREST

BC107 BC108 BC109 BC109 BC378 BC377 BFY76 BC178 BC377 BC297 BC378 BC394 BC286 BC287 BC160 BC108 BC297 BC298 BC300 BC301 BC302 BC303 BC304 BC177 BC178 BC179 BC141 BF258 BC303 BC177

PAGE

INDUSTRY STANDARD

37 37 37 37 81 81 199 61 81 69 81 87 65 67 57 37 69 69 73 73 73 77 77 61 61 61 41 117 77 61

BC344 BC345 BC347 BC348 BC349 BC350 BC351 BC352 BC354 BC355 BC357 BC358 BC360 BC361 BC368 BC369 BC370 BC377 BC378 BC381 BC382 BC383 BC384 BC385 BC386 BC387 BC388 BC393 BC394 BC395

37 37 37 61 61

BC322 BC324 BC327 BC328 BC329 BC330 BC331 BC332 BC333 BC334 BC335 BC336 BC337 BC338 BC340

BC107 BC108 BC109 BC177 BC178 BC179 BC301 BC297 BC298 BFY76 BC107 BFY76 BC107 BC108 BC178 BC109 BC178 BC377 BC378 BC140

61 73 69 69 199 37 199 37 37 61 37 61 81 81 49

BC396 BC400 BC407 BC408 BC409 BC417 BC418 BC419 BC420 BC429 BC430 BC431 BC432 BC437 BC438 BC439 BC440 BC441 BC446 BC448

BC341 BC342 BC343

BC141 BC141 BC161

49 49 57

BC451 BC452 BC453

SGS-THOMSON

SGS-THOMSON NEAREST


PAGE

73 77 37 37 37 61 61 61 95 95 95 37 57 57 91 93 69 81 81 61 37 37 37 37 37 81 69 83 87 49 57 95 37 37 37 61 61 61 83 91 93 73 77 37 37 37 91 91 95 95 37 37 37

15

CROSS REFERENCE

INDUSTRY STANDARD

BC454 BC455 BC456 BC460 BC461 BC467 BC468 BC469 BC477 BC478 BC479 BC512 BC513 BC514 BC520 BC521 BC522 BC523 BC524 BC525 BC526 BC529 BC530 BC531 BC532 BC533 BC535 BC546 BC547 BC548 BC549 BC550 BC556 BC557 BC558 BC559 BC560 BC582 BC583 BC584 BC585 BC586 BC635 BC636 BC714 BC727 BC728 BC737 BC738 BCW10 BCW11 BCW12 BCW13

16

SGS-THOMSON

SGS-THOMSON NEAREST

BC177 BC178 BC179 BC460 BC461 BC107 BC108 BC109 BC477 BC478 BC479

PAGE

61 61 61 93 93 37 37 37 95 95

BC477 BC297 BC393 BC393 BC394 BC394 2N3700 BFY76 BC107 BC108

95 61 61 61 199 129 129 199 37 95 95 69 83 83 87 87 359 199 37 37

BC109 BC107 BC477 BC478 BC478 BC479 BC478 BC107 BC108 BC109 BFY76 BC177 BC377 BC297 BC177 BC297 BC298 BC377 BC378 BCY58 BCY78 BCY59 BCY79

37 37 95 95 95 95 95 37 37 37 199 61 81 69 61 69 69 81 81 101 111 101 111

BC177 BC178 BC179 BFY76 BFR17 BFR17 BFY76 BC107 BC478

INDUSTRY STANDARD

BCW14 BCW15 BCW16 BCW17 BCW20 BCW21 BCW22 BCW23 BCW34 BCW35 BCW36 BCW37 BCW44 BCW45 BCW50 BCW62 BCW63 BCW64 BCW73 BCW74 BCW75 BCW76 BCW77 BCW78 BCW79 BCW80 BCW82 BCW83 BCW84 BCW85 BCW86 BCW87 BCW88 BCW90 BCW91 BCW92 BCW93 BCW94 BCW95 BCW96 BCW97 BCW98 BCW99 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX58 BCX59 BCX60

SGS-THOMSON

SGS-THOMSON NEAREST

PAGE

2N2222A 2N2907A 2N1613 BFX41 BC394 2N3962 BCY79 BCY79 2N2221 2N2221A

101 111 101 111 101 111 101 111 297 327 297 327 285 163 87 377 111 111 295 297

2N2906 2N2906A 2N2219 2N2219A 2N2905 2N2905A BFY76 BCY59 BCY59 BFX37

325 327 295 297 325 327 199 101 101 "159

BC177 BCY59 BCY79 BC377 BSX33 BC297 2N2907A 2N2222A BFR18 2N2907 2N2907A BCY59 BCY79 BCY59 BCY79 BC441 2N2221A 2N2906A 2N2222A 2N2907A

61 101 111 81 239 69 327 297 133 325 327 101 111 101 111 91 297 327 297 327 101 101 93

BCY59 BCY79 BCY59 BCY79 BCY58 BCY78 BCY59 BCY79 2N2222A 2N2907A

BCY58 BCY59 BC461

CROSS REFERENCE

INDUSTRY STANDARD

BCX73 BCX74 BCX75 BCX76 BCX78 BCX79 BCY56 BCY58 BCY59 BCY66 BCY67 BCY69 BCY70 BCY71 BCY72 BCY78 BCY79 BF120 BF137 BF156 BF157 BF174 BF177 BF178 BF179 BF248 BF249 BF250 BF257 BF258 BF259 BF291 BF292 BF293 BF294 BF297 BF298 BF299 BF305 BF321 BF322 BF323 BF336 BF337 BF338 BF355 BF390 BF391 BF456 BF457 BF458 BF459 BFR10

SGS·THOMSON

SGS· THOMSON NEAREST

2N2222 2N2222A 2N2907 2N2907A BCY78 BCY79 BCY59 BCY58 BCY59 BCY59 BCY79 BCY58 BCY70 BCY71 BCY72 BCY78 BCY79 BC394 BF257 BF257 BF257 BF258 BF257 BF258 BF259 2N2222 2N2907 2N2222 BF257 BF258 BF259 BC107 BF258 BC107 BF257 BF257 BF258 BF259 BF258 BC108 2N2218 2N2904 BF257 BF258 BF259 BF259 BF259 BC394 BF457 BF457 BF458 BF459 2N2218

PAGE

295 297 325 327 111 111 101 101 101 101

INDUSTRY STANDARD

SGS·THOMSON


BFR18 2N3700 BC440 BF257 BF258 BF259 2N1893 2N3020 BC394

295 101 199 129 133 335 289 289 397 401 137 133 359 91 117 117 117 289 335 87

BFT62 BFT69 BFT79 BFT80 BFT81 BFV56 BFV56A BFV57A BFV64 BFV64A

BSX33 BC178 BFW44 BFX91 BFX41 BFX40 BFX39 BFX38 BC394 BFY90 2N2906 BSX33 2N956 2N5321 BC394 2N4033 2N4030 2N4030 2N4031 2N4031 2N4033 2N4032 BSS26 BSS26 BSS26 2N2907 2N2907A

369 403 143 239 61 155 181 163 163 163 163 87 177 325 239 269 413 87 389 389 389 389 389 389 389 203 203 203 325 327

BFV64B BFV65 BFV66

2N2907 BSX26 2N2221A

325 223 297

BFR11 BFR12 BFR16 BFR17 BFR18 BFR20 BFR21 BFR22 BFR23 BFR24 BFR36 BFR39 BFR40 BFR56 BFR57

111 101 105 105 105 111 111 87 117 117 117 117 117 117 117 295 325 295 117 117 117 37 117 37 117 117 117 117 117 37

BFS95 BFS99 BFT17 BFT22 BFT30 BFT31 BFT41 BFT57 BFT60 BFT61

295 325 117 117 117 117 117 87 121 121 121 121 295

2N2221 BCY59 BFY76

PAGE

BFR17 BFR18 2N3019 2N1893 2N1893 2N4036 2N4037 BFR36

BFR58 BFR59 BFR77 BFR78 BFR86 BFR97 BFR98 BFR99A BFS61 BFS69 BFS90 BFS91 BFS92 BFS93 BFS94

BFR97 BFR98 BFR99A

17

CROSS REFERENCE

INDUSTRY STANDARD

BFV66A BFV68 BFV68A BFV90A BFV90B BFV99 BFW16A BFW17A BFW20 BFW21 BFW22 BFW24 BFW25 BFW26 BFW29 BFW31 BFW32 BFW33 BFW36 BFW38 BFW43 BFW44 BFW45 BFW63 BFW63A BFW71 BFW73 BFW74 BFW75 BFW76 BFW77 BFW78 BFX12 BFX13 BFX23 BFX29 BFX35 BFX36 BFX37 BFX38 BFX39 BFX40 BFX41 BFX43 BFX44 BFX48 BFX50 BFX51 BFX55 BFX59 BFX68 BFX68A BFX69

18

SGS·THOMSON

SGS·THOMSON NEAREST

2N2222A 2N2484 2N2484 2N2222 2N2221 2N2221A

PAGE

95 339 339 339 295

BFX69A BFX73 BFX74 BFX74A BFX84 BFX85 BFX86 BFX87 BFX88 BFX89 BFX90 BFX91 BFX93 BFX94 BFX94A

BF257 2N2222 2N2222A BFW16A BFW16A BFW17A BFW17A BFW17A

325 295 263 117 117 155 155 117 295 297 151 151 151 151 151

BFX95 BFX95A BFX96 BFX96A BFX97 BFX97A BFX98 BFY25 BFY26 BFY33 BFY34 BFY40 BFY41 BFY43 BFY44

BFW16A BFW17A BFX48 BFX48 BSX32

151 151 167 167 235

2N2904A 2N2907 2N2907A

327 325 327 159 163 163 163 163 305 307 167 297 297 137 177 285 285 285

BFY45 BFY46 BFY50 BFY51 BFY52 BFY53 BFY55 BFY56 BFY56A BFY56B

BFW16A BFW17A BC477 BFX37 BC478 2N3108 2N3110 2N3109 2N2219 2N2905 2N2219 BSY56 BF257 BF257 BFW43 BFW44

BFX37 BFX38 BFX39 BFX40 BFX41 2N2369 2N2369A BFX48 2N2222A 2N2221A BFR36 BFX89 2N1711 2N1711 2N1613

297 311 311 295 295 297 151 151 95 159

INDUSTRY STANDARD

BFY57 BFY64 BFY65 BFY67 BFY68 BFY70 BFY72 BFY76 BFY77 BFY88 BFY90 BSS11 BSS12

SGS·THOMSON


2N1613 2N918 2N2904 BFX39 2N1893 2N1893 2N1711 2N2905 2N2905 BFX89 BFX90 BFX91 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2218 2N2218A 2N2219 2N2219A BF257 2N2219A 2N2222A BFY56 2N1613 2N1711 BF257 BF257 BFY56A BF257 2N1711 BFY50 BFY51 BFY52 2N1613 2N1613 BFY56 BFY56A BFY56A BF257 BFY64 BF257 2N1613 2N1711 2N2218A 2N2218 BFY76 2N2484 BFR36 BFY90 BSX20 BSX28

PAGE

285 279 325 163 289 289 285 325 325 177 181 181 283 295 297 295 297 295 297 295 297 117 297 297 191 285 285 117 117 191 117 285 187 187 187 285 285 191 191 191 117 195 117 285 285 297 195 199 311 137 177 219 227

CROSS REFERENCE

INDUSTRY STANDARD

BSS15 BSS16 BSS17 BSS18 BSS23 BSS26 BSS27 BSS28 BSS29 BSS30 BSS31 BSS40 BSS41 BSS59 BSS68 BSS71S BSS72S BSS74S BSS75S BSV15 BSV16 BSV17 BSV21 BSV23 BSV24 BSV25 BSV26 BSV27 BSV33 BSV68 BSV69 BSV77 BSV82 BSV83 BSV84 BSV85 BSV89 BSV90 BSV91 BSV92 BSV95 BSW19 BSW19A BSW20 BSW20A BSW21 BSW21A BSW22 BSW22A BSW23 BSW24 BSW25 BSW26

SGS-THOMSON

SGS-THOMSON NEAREST

2N5320 2N5321 2N5322 2N5323 BSS26

PAGE

BSX32 2N3725 2N5322 2N5323 2N5320

413 413 415 415 203 203 365 235 235 289 335 203 203 359 83 207 209 211 213 215 215 215 321 227 227 219 219 219 231 155 235 365 415 415 413

2N5321 BSX19 BSX20 2N2369 BSX26 2N3725 2N2906 2N2907 2N2906 2N2907 BCY78 BCY79 BCY78 BCY79 2N2904 2N2904A BSX29 BSS26

413 219 219 305 203 365 325 325 325 325 111 111 111 111 325 327 231 203

BSS26 2N3725 BSX32 BSX32 2N1893 2N3019 BSS26 BSS26 2N3700 BC393 BSS71S BSS72S BSS74S BSS75S BSV15 BSV16 BSV16 2N2894 BSX28 BSX28 BSX19 BSX19 BSX20 BSX29 BFW43

INDUSTRY STANDARD

BSW27 BSW28 BSW29 BSW37 BSW38 BSW41 BSW42 BSW42A BSW43A BSW44 BSW44A BSW45 BSW45A BSW49 BSW51 BSW52 BSW53 BSW54 BSW61 BSW62 BSW63 BSW64 BSW72 BSW73 BSW74 BSW75 BSW82 BSW83 BSW84 BSW85 BSX19 BSX20 BSX21 BSX22 BSX23 BSX24 BSX25 BSX26 BSX28 BSX29 BSX30 BSX33 BSX38A BSX38B BSX39 BSX45 BSX46 BSX47 BSX48 BSX49 BSX51 BSX52 BSX53

SGS-THOMSON

SGS-THOMSON NEAREST

2N3725 BSX32 BSX32 2N2894 BSX19 2N2221A BCY58 BCY59 BCY59 BCY78 BCY79 BCY78 BCY79 BSX32 2N2218 2N2219 2N2218A 2N2219A 2N2221 2N2222 2N2221A 2N2222A 2N2906 2N2907 2N2906A 2N2907A 2N2221 2N2222 2N2221 2N2222A BSX19 BSX20 BC394 2N5321 2N5320 2N2221 2N2222 BSX26 BSX28 BSX29 BSX32 BSX33 BCY58 BCY59 BSX39 BSX45 BSX46 BFY56 BSS26 BSS26 BCY58 BCY59 BCY58

PAGE

365 235 235 321 219 297 101 101 101 111 . 111 111 111 235 295 295 297 297 295 295 297 297 325 325 327 327 295 295 295 297 219 219 87 413 413 295 295 223 227 231 235 239 101 101 243 247 247 191 203 203 101 101 101

19

CROSS REFERENCE

INDUSTRY STANDARD

BSX54 BSX59 BSX60 BSX61 BSX76 BSX77 BSX78 BSX87 BSX87A BSX88 BSX88A BSX89 BSX90 BSX91 BSX92 BSX93 BSX95 BSX96 BSX97 BSY10 BSY11 BSY17 BSY18 BSY19 BSY20 BSY21 BSY22 BSY23 BSY34 BSY38 BSY40 BSY41 BSY44 BSY45 BSY46 BSY53 BSY54 BSY55 BSY56 BSY58 BSY62A BSY62B BSY63 BSY70 BSY71 BSY72 BSY73 BSY74 BSY78 BSY83 BSY84 BSY85 BSY86

20

SGS-THOMSON

SGS-THOMSON PAGE NEAREST

BCY59 BSX32 2N3725 2N3725 BSX20 2N2369A BSX20 BSX26 BSX26 BSX39 BSX88A BSX19 BSX20 2N2369A 2N2369 BSX93 2N1613 2N1711 2N2221 2N2218A 2N2219 BSX19 BSX20 BSX26 BSX20 BSX26 BCY59 BSX19 BSX32 BSX19 BSX29 BSX29 2N1613 2N1893 2N1613 BSY53 BSY54 BSY55 BSY56 BSX32 BSX19 BSX20 BSX93 BSX39 2N1711 BCY58 BCY58 BCY59 2N2222 BFY56A 2N1711 BSX45 BSX46

INDUSTRY STANDARD

SGS-THOMSON

101 235 365 365 219 307 219 223 223 243 251 219 219 307 305 255 285 285 295 297 295 219 219 223 219 223 101 219 235 219

BSY87 BSY88 BSY89 BSY95 BSY95A MM2193A MM3019 MM3020 MM3053 MM3905 MM3906 S01300 2N656 2N657 2N696 2N697 2N698 2N706 2N706A 2N707 2N708 2N708 2N718A 2N718A 2N720A 2N720A 2N721 2N722 2N735 2N736 2N743 2N744 2N753

231 231 285 289 285 259 259 263 263 235 219 219 255 243 285 101 101 101 295 191 285 247 247

2N754 2N760A 2N780 2N834 2N869 2N870 2N871 2N910 2N911 2N912 2N914 2N918 2N929 2N930 2N956 2N978 2N995 2N1132 2N1420 2N1507 2N1572 2N1573 2N1574

SGS-THOMSON NEAREST

BSY56 2N3107 BCY58 BSX19 BSX20 2N2218A 2N3019 2N3020 2N3053 2N3250 2N3251 BFY90 BSX46 BC300 BSY53 2N1613 2N1893 BSX26 BSX19 BSX39

2N2906 2N2906A 2N2484 BFR18 BSX19 BSX20 2N2369A 2N1893 BFY76 2N930 BSX20 BSX29 BSX33 BFR18 BFR18 BSX33 BFR18 2N914 2N918 BFY76

2N930 2N956 2N2906 BSX29 2N2904 2N2219 2N2219 2N1893 2N1893 2N3020

PAGE

263 339 101 219 219 297 335 335 337 349 349 177 247 73 259 285 289 223 219 243 267 269 273 325 327 311 133 219 219 307 289 199 283 219 231 239 133 133 239 133 275 279 199 283 269 325 231 325 295 295 289 289 335

CROSS REFERENCE

INDUSTRY STANDARD

2N1613 2N1711 2N1890 2N1893 2N1983 2N1984 2N1985 2N1986 2N1987 2N1990 2N1991 2N2049 2N2102 2N2193 2N2194A 2N2195 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2221 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N2405 2N2410 2N2412 2N2477 2N2483 2N2484 2N2511 2N2586 2N2692 2N2693 2N2694 2N2711 2N2712 2N2714 2N2845 2N2848 2N2857 2N2864 2N2868 2N2894 2N2904 2N2904A 2N2905 2N2905A

SG8-THOMSON


2N1613 2N1711 BSY55 2N1893 2N2219 2N2218 2N1613 2N2218 2N1613 2N1893 2N2904 BFY52 2N2102 BSX45 2N2218A 2N2218 2N2218 2N2218 2N2218A 2N2219 2N2219A 2N2221 2N2221A 2N2222 2N2222A BFY56 2N2368 2N2369 2N2369A BC300 BSX32 BSX29 2N3725 BFY76 2N2484 BFY76 BFR17 BCY59 BCY59 BCY59 BCY58 BCY58 BCY59 2N2845 BSX32 2N2857 BFY50 BSY53 2N2894 2N2904 2N2904A 2N2905 2N2905A

------------------------

PAGE

INDUSTRY STANDARD

285 285 263 289 295 295 285 295 285 289 325 187 293 247 297 295 295 295 297 295 297 295 297 295 297 263 303 305 307 73

2N2906 2N2906A 2N2907 2N2907A 2N2927 2N2959 2N3009 2N3011 2N3012 2N3013 2N3014 2N3015 2N3019 2N3020 2N3036 2N3053 2N3070 2N3073 2N3107 2N3108 2N3109 2N3110 2N3114 2N3117 2N3121 2N3137 2N3209 2N3250 2N3251 2N3252

235 231 365 199 311 199 129 101 101 101 101 101 101 315 235 319 187 259 321 325 327 325 327

2N3253 2N3261 2N3299 2N3300 2N3301 2N3302 2N3309 2N3478 2N3485 2N3486 2N3502 2N3503 2N3504 2N3505 2N3563 2N3565 2N3566 2N3567 2N3568 2N3569 2N3572 2N3600 2N3638

SGS·THOMSON


2N2906 2N2906A 2N2907 2N2907A 2N2904A 2N2219A 2N3013 BSX28 2N2894 2N3013 2N3014 BSX32 2N3019 2N3020 2N1893 2N3053 2N2905A 2N2906A 2N3107 2N3108 2N3109 2N3110 2N3114 BFR17 2N2906A 2N3137 2N3209 2N3250 2N3251 2N3725 BSX32 BSX20 2N2218 2N2219 2N3301 2N3302 2N2218 2N5179 2N2906 2N2907 2N3502 2N3503 2N3504 2N3505 2N918 BFY76 2N1711 2N1613 BFY56A BFY56 BFY90 2N3600 2N2905

PAGE

325 327 325 327 327 297 331 227 321 331 333 235 335 335 289 337 327 327 339 339 339 339 343 129 327 345 321 349 349 365 235 219 295 295 353 353 295 411 325 325 357 357 357 357 279 199 285 285 191 191 177 171 325

~~~~@~gm~~ 21

CROSS REFERENCE

INDUSTRY STANDARD

2N3641 2N3642 2N3643 2N3644 2N3645 2N3646 2N3662 2N3663 2N3700 2N3712 2N3725 2N3776 2N3777 2N3793 2N3794 2N3825 2N3828 2N3866 2N3903 2N3904 2N3905 2N3906 2N3930 2N3931 2N3962 2N3963 2N3964 2N3965 2N4013 2N4014 2N4030 2N4031 2N4032 2N4033 2N4035 2N4036 2N4037 2N4046 2N4047 2N4058 2N4059 2N4060 2N4061 2N4062 2N4121 2N4248 2N4249 2N4250 2N4258 2N4264 2N4265 2N4286 2N4287

22

SGS·THOMSON


2N2218 2N2218A 2N2219 2N2905 2N2905A BSX26 2N918 BFX89 2N3700 BF257 2N3725 2N5321 2N5322 BC107 BC108 BC109 BC107 2N3866 2N2222 2N2221 2N2906 2N2907 2N3930 2N3931 2N3962 2N3963 2N3964 2N3965 2N4013 2N4014 2N4030 2N4031 2N4032 2N4033 2N4035 2N4036 2N4037 BSX32 2N3725 BC177 BC178 BC177 BC177 BC178 BCY70 BC177 BC177 BC178 BC179 BC108 BC107 BC107 BC107

PAGE

295 297 295 325 327 223 279 177 359 117 365 413 415 37 37 37 37 369 295 295 325 325 373 373 377 377 377 377 381 385 389 389 389 389 393 397 401 235 365 61 61 61 61 61 105 61 61 61 61 37 37 37 37

INDUSTRY STANDARD

2N4288 2N4289 2N4290 2N4291 2N4292 2N4293 2N4358 2N4359 2N4402 2N4403 2N4427 2N4875 2N4917 2N4927 2N5053 2N5054 2N5086 2N5087 2N5088 2N5089 2N5109 2N5128 2N5132 2N5135 2N5136 2N5138 2N5172 2N5179 2N5180 2N5209 2N5210 2N5219 2N5320 2N5321 2N5322 2N5323 2N5415S 2N5421 2N5550 2N5551 2N5687 2N6304 2N6305 2SA561 2SA565 2SA578 2SA673 2SA677 2SC80 2SC99 2SC100 2SC108 2SC120

SGS·THOMSON


BC178 BC177 BC179 BC179 BC109 BC109 2N5415S BFX37 2N2906 2N2907 2N4427 BFW16A 2N3251 BF258 BFX89 BFY90 BCY79 BCY79 BCY59 BCY59 2N5109 2N2219 BC109 BCY58 BC119 BCY79 BCY58 2N5179 2N5179 BC107 BC107 BC108 2N5320 2N5321 2N5322 2N5323 2N5415S 2N4427 BC394 BC394 2N4427 BFY90 BFX89 BC297 BC297 BC177 BC297 BC298 BC108 BC109 2N1613 2N1711 2N1711

PAGE

61 61 61 61 37 37 417 159 325 325 403 151 349 117 177 177 111 111 101 101 407 295 37 101 43 111 101 411 411 37 37 37 413 413 415 415 417 403 87 87 415 177 177 69 69 61 69 69 37 37 285 285 285

CROSS REFERENCE

INDUSTRY STANDARD

SGS·THOMSON


PAGE

2SC122 2SC150 2SC155 2SC156 2SC172 2SC188 2SC189 2SC196 2SC197 2SC199 2SC204 2SC206 2SC228 2SC233 2SC237 2SC266 2SC273 2SC281 2SC282 2SC283 2SC284 2SC319 2SC320 2SC368 2SC468 2SC540 2SC588 2SC605 2SC821 2SC988

2N2369 BFY50 BC108 BC109 BSX20 2N2218 2N2218A BSX20 BFY51 BSY54 BSX19 BC107 BSY53 BSY54 2N2369 BC108 2N1711 BC107 BFY50 2N1613 2N1711 2N4427 BC107 BC107 BSX19 BC109 2N3107 2N3108 2N4427 BFY90

305 187 37 37 219 295 297 219 187 259 219 37 259 259 305 37 285 37 187 285 285 403 37 37 219 37 339 339 403 177

2SC1044 2SC1254 2SC1260 2SC1275 2SC1807 40280 40894 40895 40896 40897

2N2857 2N2857 BFY90 BFY90 BFY90 2N4427 2N5179 BFX89 BFX89 2N5179

319 319 177 177 177 403 411 177 177 411

INDUSTRY STANDARD

SGS· THOMSON


PAGE

23

HANDLING PRECAUTION PCB Mounting

Soldering

Frequently lead forming is necessary to allow a suitable fit of a transistor on to a PCB. With or without lead forming these points should be observed.

The specified temperatures for soldering transistor leads are 260°C for 10 seconds or 350°C for 3 seconds. Temperature and times in excess of these could adversely effect the transistors.

I)

Space the lead holes on the PCB to match the foot pri nt of the transistor

II) Avoid lateral stress or excessive pressure on the ends of the transistor leads. III) Use a spacer between the transistor and PCB IV) When lead forming prior to mounting a transistor - make the bend at least 3 mm from the transistor body - clamp the leads near the transistor body before forming the lead - maintain a space between the jig and transistor body - follow all the precautions specified in the various standard relating to the transistors V) When mounting a transistor onto a heat sink: - use the correct accessories - drill the holes on the heat sink as specified and properly deburr them. Avoid "pitting" the heat sink. - use a recommended silicon grease - use the correct tightening torque for the mounting screws or use the correct clips for mounting the transistors - never use pneumatic screwdrivers to mount transistors VI) Avoid repeated bending of transistor leads when lead forming.

24

Use a non corrosive flux Be sure to - solder quickly - avoid appling mechanical stress to the transistor after soldering it, i.e. do not adjust its position - mount the transistor on its heatsink before soldering the assemply to a PCB - do not solder the heat radiating metal case, of a metal cased transistor, to a PCB - use a low leakage soldering iron properly grounded. Cleaning the PCB

After soldering clean the PCB to remove the flux. - do not rub identifying marks with a brush or fingers when using a cleaning agent. take care using ultrasonic cleaning baths. Under certain circumstances the service life of airtight sealed transistors may be shortened. the recommended cleaning method is to adapt steam or jetstream cleaning techniques, where the transistors are mounted on PCB's. Static Electricity

Maximum parameter ratings for the transistors should in no case be exceeded. However during handling it is possible that excessive static voltages may be applied directly or indirectly while handling them. High frequency transistors are particularly prone to damages from static charges. Proper circuit protection procedures should be observed.

QUALITY QUALITY ASSURANCE The average outgoing quality level (ADO) is ultimated with the results of outgoing inspection which carries out a sampling inspection on each lot according to devices specification. Sampling plan of outgoing inspection (according to MILSTD105D standard).

LEVEL

AQL

Visual and mechanical inspection

II

0.04

Cumulative static electrical parameter (inoperative + out of specification limits)

II

0.065

54

0.25

SUBGROUP

PARAMETERS

A1 A2+A3

AC Parameters

A4

Estimator of average outgoing quality level * (see sure 5) AOQ

=

d=c+1 L Nd * d d= 1 AOOE d=c L d=O

Nd * n

Total defective units in samples with d:;::; c + 1 Total inspected units in samples of accepted lots where:

n

c d Nd

sample size acceptance criterion number of defects in sample number of lots with d defects on sample n

The value is expressed in: PPM = Parts per million (10- 6) (The sums are applied to all inspected lots: 1st, 2nd inspection)

25

QUALITY RELIABILITY ASSURANCE Continuous reliability auditing with accelerated tests are performed on small signal transistor production in 2 stages: • internal real time control (RTC) A great emphasis is given to these process oriented reliability tests performed on a weekly basis. High accelerated conditions are used as often as phisically possible: - detection of any slight process shift

- evaluation of the impact of process control continual improvement • group band c - long time life tests they are performed on a periodic basic (usually every 3 months) to complete the information given by RTC tests and to define the long term reliability of the product and failure rate evalutation. The results are cumulated each year - they are available on request.

Reliability Test Conditions Test HTRB

Conditions VCC = 80% VCES maximum rating Ta = 150°C Short term = 168 hours Long term = 1000 hours

THERMAL CYCLES

- 65°C to + 150°C short term = 100 cycles long term = 1000 cycles

OPERATING LIFE

Tj

= Tj

PO

=

26

Ta

=

cf"CC

Tj max. -

=

T case

Rth 1000 hours

Tj max.

long term

=

1000 hours

Standard MILSTD 750C method 1032

MILSTD750C method 1051

max.

long term HIGH TEMPERATURE STORAGE

Typical test Circuit

I~CC

QUALITY

Note: SPC methods are used for Process Control Assurance and continual quality improvement towards Zero defect target. Hihg values of process control capability (CPK) at each significant step assure reliable results at the end of the process TYPICAL WAFER FABRICATION FLOW CHART

LOT FORMING

Initialization of "Lot Tracking" procedure (total traceability throughout the process)

I -

OXIDATION r-I

1

'"="" diffusion cycles

~~~~~~-.

OXIDE INSPECTION

MASKING

rVISUALCHEC~

INSPECTION

ETCHING

1-------.

INSPECTION

DIFFUSION DOPING BY DIFFUSION OR BY IMPLANT ur-~~~~~-STRUCTUREPARAMETER-CHECK

1 - - - - - - - - . INSPECTION

Ir-~~~~~~--I r-I------.

OXIDATION, GLASS DEPOSITION

•• OXIDE and GLASS INSPECTION

MASKING

INSPECTION

ETCHING

9~------VISUAL and ELECTRICAL CHECK Ir-~-------I. INSPECTION METALIZATION 9-------METALIZATION CHECK

Ir-~-------I. INSPECTION FINISHED WAFERS

I 100% PROBING ?-----AVERAGE OUTGOING QUALITY EVALUATION PACKING IN HERMETICALLY SEALED BAGS

1

•

VISUAL INSPECTION

WAFER WAREHOUSE (F.I.F.O. PROCEDURE)

End of "Lot Tracking"

~

..'YI

SCiS-THOMSON

illD©OO(QJ~~~©"frm@illD©:ll

27

QUALITY Note: SPC methods are used for Process Control Assurance and continual quality improvement towards Zero defect target. Hihg values of process control capability (CPK) at each significant step assure reliable results at the end of the process METAL CASE ASSEMBLY - TYPICAL FLOW CHART

WAFERS FROM WAREHOUSE Initialization of Production Route Card (linked to "Lot Tracking" for traceability throughout the process)

I SAWING VISUAL CHECK ,----------~ I-----~---___

RAW MATERIALS HEADERS INSPECTION

DIE ATTACHING

1 - - - - - - - - - 1•• DIE ATTACHING

INSPECTION

WIRE BONDING

1 - - - - - - - - -__ WIRE BOND INSPECTION PRE-CAP ACCEPTANCE SEALING

1 - - - - - - - - - - 1•• SEALING INSPECTION LEAD FINISH LEAD FINISH ACCEPTANCE

I - - - - - - - -__ INTERNAL WAFER I VAPOR INSPECTION HIGH IMPACT SHOCK RAW LINE ACCEPTANCE

1 - - - - - - - - - . SHORT TERM RELIABILITY TEST (RTC)

RAW LINE WAREHOUSE (F,I.F,O, PROCEDURE) End of production route card with raw line acceptance

28

QUALITY Note: SPC methods are used for Process Control Assurance and continual quality improvement towards Zero defect target. Hihg values of process control capability (CPK) at each significant step assure reliable results at the end of the process FINISHING - TYPICAL FLOW CHART

RAW LINE STORE

Initialization of "Lot Identification" linked to other traceability documents

FIRST TESTING I

FALLOUT ANALYSIS FALLOUT RE-TESTING I

ADDITIONAL STEPS ON REQUEST I

SECOND TESTING

1 - - - - - - - - 1•• REJECT ANALYSIS (corrective action) MARKING

PACKING (label with lot identification)

LI

FINISH PRODUCT ACCEPTANCE AVERAGE OUTGOING QUALITY EVALUATION

FINISHED PRODUCTS WAREHOUSE (F.I.F.O. PROCEDURE)

1 SHIPMENT TO CUSTOMERS

•

AUDITS

End of "Lot Identification"

29

SURFACE MOUNTING CASE - SOT 23 Description The ever growing electronics equipment market is directed towards the shrinking of equipment size, weight and height, while demanding more diversified functions. To meet these requirements Surface Mounting Techniques (SMTs) are being employed. The miniaturized components such as capacitances, resisitors, inductors, transistors, diodes, les, etc. are mounted on the surface of a board rather than having their leads inserted through holes. The use of micropackage devices offers many advantages compared to conventional assembly techniques. 1) The end product can be made more compact with about three times the mounting density as conventional components. 2) Easy handling and automated assembly cut production costs, e save on labour and time.

30

3) The small size of the packages reduces stray inductance and cpacitance and also improves RF performance. 4) The moisture resistance and mechanical ruggedness of the epoxy package ensure high reliability. Over the last few years SGS-THOMSON has introduced a large number of surface face mounted devices of which the SOT-23 is one of the most popular. The flat SOT-23 devices are packaged and shipped in super 8 tape & reels. The tapes are made of special conductive vinyl. These reels are designed to hold and protect thousands of surface mountable components-enough to keep robots busy assembling printed circuit boards for hours at a time! Datasheets are available on request.

SURFACE MOUNTING CASE: SOT 23 TAPE MECHANICAL DATA

N

M

p

G

R PC-0282

DIMENSIONS mm

inches

min

max

min

max

A

2.95

3.05

0.116

0.120 0.104

B

2.55

2.65

0.100

C

1

1.1

0.039

0.043

D

1.5

1.6

0.059

0.063

E

1.95

2.05

0.076

0.080

G

3.9

4.1

0.153

0.161

H

3.45

3.55

0.135

0.140

L

1.65

1.85

0.065

0.073

M

7.8

8.2

0.307

0.322

N

-

0.3

-

0.D12

P

1.3

1.4

0.051

0.055

R

-

1.8

-

0.070

Shear force needed to peel back the tape. 0.2 to 1.3 N at 300 mm/min.

..r=-= ..,I SGS-1HOMSON jjJu©Iiil©~~~©'jOO©IRlU©il)

31

SURFACE MOUNTING CASE: SOT 23 REEL MECHANICAL DATA

F

PC-0280

DIMENSIONS

mm

A

inches

min

max

min

12.5

max

13.5

0.492

0.531 0.866

B

20

22

0.787

C

68

72

2.677

2.834

D

78

8~

3.070

3.228

E

138

142

5.433

5.590

F

176

180

6.929

7.080 0.098

G

1.5

2.5

0.059

H

8.4

9.9

0.330

0.390

ex

40°

40°C

~

120°

120°

Quantity per Reel = 3000 pieces

32

SURFACE MOUNTING CASE: SOT 23 PACKAGE

(

p

t----B---.I

o

PC-0300

DIMENSIONS

mm

inches

min

max

min

max

A

0.93

1.04

0.036

0.041

B

2.8

3

0.110

0.118

C

1.2

1.4

0.047

0.055

D

2.1

2.5

0.082

0.098

E

1.9

2.05

0.074

0.080

F

0.95

1.05

0.037

0.041

G

0.45

0.60

0.017

0.023

H

0.15

-

0.006

-

L

0.065

0.115

0.003

0.004

M

0.013

0.1

0.0005

0.004

N

0.06

-

0.003

P

0.45

0.6

0.017

0.023

R

0.37

0.46

0.014

0.018

-

pin 1 = EMITTER pin 2

=

BASE

pin 3 = COLLECTOR

33

DATASHEETS

35

BC107 BC1 08-BC1 09 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are respectively the BC177, BC178 and BC179.

TO-18

INTERNAL SCHEMATIC DIAGRAM

c

:~:

E

ABSOLUTE MAXIMUM RATINGS Symbol

Parameter

= 0) = 0)

VCBO

Collector-base Voltage (IE

VCEO

Collector-emitter Voltage (IB

VEBO

Emitter-base Voltage (Ic

= 0)

Value

Unit

BC107

BCt08

BCt09

50

30

30

V

45

20

20

V

5

5

6

V

Collector Current

100

mA

Ptot

Total Power Dissipation at T amb " 25 DC at T case" 25°C

0.3 0.75

W W

T stg

Storage Temperature

- 55 to 175

DC

Ti

Junction Temperature

175

DC

Ic

January 1989

1/5

37

BC1 07-BC1 08-BC1 09 THERMAL DATA Max Max

Thermal Resistance Junction-case Thermal Resistance Junction-ambient

200 500

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBO

Parameter Collector Cutoff Current (I E = 0)

Test Conditions

V(8R)C80

Collector-base Breakdown Voltage (IE = 0)

Ic=101JA

V(8R)CEO *

Collector-emitter Breakdown Voltage (IB = 0)

le=10mA

V{BR)E80

Emitter-base Breakdown Voltage (Ic = 0)

IE =101JA

VCE(sa!) *

Collector-emitter Saturation Voltage

Ic = 10 mA Ic = 100 mA

IB = 0.5 mA 18 = 5 mA

Base-emitter Voltage

Ic = 2 mA Ie = 10 mA

VeE = 5 V VeE = 5 V

Base-emitter Saturation Voltage

Ie = 10 mA Ie = 100 mA

18 = 0.5 mA 18 = 5 mA

DC Current Gain

Ie = 2 mA

VBE * VBE(sa') * hFE *

Ic=101JA

• Pulsed: pulse duration

2/5

38

= 300 ~s, duty cycle = 1 %.

Min.

Typ.

for BC1 07 Ve8 =40 V T amb = 150 DC Ve8 =40 V for BC1 08-BC 109 Ve8 = 20 V T amb = 150 DC Ve8 = 20 V

Max.

Unit

15 15

IJA

15 15

~A ~A

nA

for BC1 07 for BC108 for BC1 09

50 30 30

V V V

for BC1 07 for BC1 08 for BC1 09

45 20 20

V V V

for BC1 07 for BC1 08 for BC1 09

6 5 5

V V V

VCE = 5 V for BC1 07 for BC1 07 Gr. for BC1 07 Gr. for BC108 for BC1 08 Gr. for BC1 08 Gr. for BC1 08 Gr. for BC1 09 for BC1 09 Gr. for BC1 09 Gr. VCE = 5 V for BC1 07 for BC1 07 Gr. for BC1 07 Gr. for BC1 08 for BC1 08 Gr. for BC1 08 Gr. for BC1 08 Gr. for BC109 for BC1 09 Gr. for BC1 09 Gr.

550

70 200

250 600

mV mV

650 700

700 700

mV mV mV mV

750 900

A B A B C B C

A B A B C B C

110 110 200 110 110 200 420 200 200 420

40

40 100 40 40 100

230 180 290 350 180 290 520 350 290 520 120 90 150 120 90 150 270 150 270

450 220 450 800 220 450 800 800 450 800

BCl 07-BC1 OS-BCl 09 ELECTRICAL CHARACTERISTICS (continued) Symbol hIe

Parameter

Min.

Test Conditions

Small Signal Current Gain

Ic = 2 mA f = 1 kHz

Ic = 10 mA 1=100MHz

lor BC107 lor BC1 07 Gr. lor BC1 07 Gr. lor BC1 08 lor BC1 08 Gr. lor BC1 08 Gr. lor BC1 08 Gr. lor BC1 09 lor BC109 Gr. lor BC1 09 Gr. VCE=10V

IE = 0 1=1 MHz

VCB = 10 V

CEBO

Emitter-base Capacitance

Ic = 0 1=1 MHz

VEB =0.5 V

NF

Noise Figure

Ic = 0.2 mA Rg = 2 kQ B = 200 Hz

VCE = 5 V 1=1 kHz

Ic = 2 mA 1=1 kHz

=

300 ~s, duty cycle

=

A B C B C

pF

6 pF

BC1 07 BC1 08 BC1 09 =5 V

2 2 1.5

10 10 4

dB dB dB

lor BC109

1.5

4

dB

VCE = 5 V lor lor lor lor lor lor lor lor lor lor


Unit

250 190 300 370 190 300 500 370 300 550

12

Ic = 0.2 mA Rg = 2 kQ I = 10Hz to 10kHz B = 15.7 kHz Input Impedance

A B

4

lor lor lor VCE

hie

Max.

2

Collector-base Capacitance

CCBO

Typ.

VCE = 5 V

BC1 07 BC1 07 BC1 07 BC108 BC1 08 BC1 08 BC1 08 BC1 09 BC1 09 BC1 09

4

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C

3 4.8

5.5 3 4.8

7 5.5 4.8

7

kQ kQ kQ kQ kQ kQ kQ kQ kQ kQ

t %.

3/5

39

BC107-BC108-BC109 ELECTRICAL CHARACTERISTICS (continued) Symbol

Test Conditions

Parameter

Ic = 2 mA f = 1 kHz

Reverse Voltage Ratio

hr.

VCE for for for for for for for for for for

Ic = 2 mA f = 1 kHz

Output Admittance

hoe

Typ.

Max.

=5

2.2x10- 4 1.7x10-4 2.7x10- 4 3.1 x1 0- 4 1.7x1 0- 4 2.7x10- 4 3.8x10- 4 3.1 x1 0- 4 2.7x10- 4 3.8x10- 4

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C V

BC107 BC1 07 BC1 07 BC1 08 BC1 08 BC1 08 BC1 08 BC109 BC109 BC1 09

~S ~S ~S ~S ~S ~S ~S ~S ~S ~S

20 13 26 30 13 26 34 30 26 34

Gr. A Gr. B Gr. A Gr. B Gr. C Gr. B Gr. C

= 1 %.

• Pulsed: pulse duration = 300 Ils, duty cycle

Collector--emitter Saturation Voltage.

DC Normalized Current Gain. G 3216

, III' 111I 1.6

I~

~

II

I

!

I!

I

l'

I

!,

V

25-C

;1

I' I

I I

f"""

"

18

,I

I

liiltiTfilllfV

i I

I

0

,

NORMAL ZATION --:hFE= latIC=2mA 0

II

,

i

I

\1

I, , ,

!!

I"

i

I I

i I' I

I

I

I'

,

I

11I1I1 II.illlll 10

40

Ie" 20

,,

!" I !

11'

,....

I

Ii

1

I1I1I11

160

amb=4S-C

I

4/5

:

120

0.8

II~ j

I

I

1.Z

0.4

G 3211

VCE(sat ) (mV)

i

1:

Unit

V

BC1 07 BC1 07 BC1 07 BC108 BC108 BC1 08 BC1 08 BC109 BC1 09 BC1 09

VCE for for for for for for for for for for

Min.

=5

0 Ie (mA)

10

Ie (mA)

BC1 07·BC1 08·BC1 09 Collector-base Capacitance.

Transition Frequency. G-1l1911

G-3218

II

'r

CCBO

(MHz )

(pF)

r\

220

=0

IE

VeE'= 10

\

200

'"

V

180

.........

r-

-

~

160

I

14a

1/

120 100 10- 1

12

Noise Figure (for Be 109 only).

10

IC(mA)

Noise Figure (for Be 109 only). G-)220

R9 (kfi)

'\:

'l'

l.d~ "

" ~ ,~

"" I"

,

,,,-

, IT

r--.

l\

t'-..1'-. VeE

r-+-

.

,

1-1

ni

10- 1

10-3

=5V

t= 100Hz 8=2QHz

5

II

1.5dB

,t:=

4

f" 100Hz B:::?OHz'

......

,

4

~

'c(mA)

Power Rating Chart. G-3222

Rg

-

"fVCE= = 5V

~

'~ 10

'S:

1

"J t-....

'"

4~

l'-'1"-

,

~

25 a

15

1.5dB '

I Ii i l

t-....""'" 2

l'

...;;;:;;:

I

'"1'\

I"\.

a

1'\ 1'\

of-- t--

4

Ie

I

1"-

f - I-----

o (rnA)

25

50

75

100

I

FRiEAIR

1'\

10 a

,

t-:::::=t-t-!.. 10- 1

1'\

20 a I

" " l~--

ll"\.

I

1

" ," .........

G-J22J

Pto

ImW

;; f=1OHztol0kH z 6=15.7 kHz

,

5

l C(mA)

Noise Figure (for Be 109 only). (kG)

,

' 'I' nil'\. l\. '.

I"

2

VeE'= SV

,

~

~ [\TT

~

5

IkM " "1--,

.;::::r:::F K

10

G-3221

R9

" "

1'\

+-- f -

1"-

I'\.

125

5/5

41

BC119 AUDIO OUTPUT AMPLIFIER DESCRIPTION The BC119 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is suitable for 1 W class "A" and up to 6 W class "B" audio output stages.

TO-39


c B

E

ABSOLUTE MAXIMUM RATINGS Symbol Vcso VCEO VEso Ptot

Parameter

Value

Unit

60

V

= 0) Collector-emitter Voltage (Is = 0) Emitter-base Voltage (Ic = 0)

30

V

5

V

Total Power Dissipation at Tamb 5: 25°C at Tease 5: 25°C at Tease 5: 100°C

0.8 5 2.8

W W W


Tstg

Storage Temperature

- 55 to 200

°C

Tj


200

°C

January 1989

1/2

43

BC119 THERMAL DATA Max Max


ELECTRICAL CHARACTERISTICS (Tamb Symbol

Collector Cutoff Current (IE ~ 0)

ICBo

V(BR)CBO

V(BR)CEO

.

V(BR)EBO

VCE(sat)

VBE

.

VBE(sat)

hFE

.

.

iT CCBO

44

Test Conditions

VCB VCB

~ ~

40 V 40 V

Ic ~ 100 ~A

Collector-emitter Breakdown Voltage (IB ~ 0)

Ic

Emitter-base Breakdown Voltage (Ic ~ 0) Collector-emitter Saturation Voltage


Min.

Typ.

Tamb ~ 150°C

Max.

Unit

100 20

~A

nA

60

V

30 mA

30

V

IE ~ 100 ~A

5

V

Ic Ic Ic

~

~ ~ ~

150 mA 500 mA 1A

Ic ~ 500 mA Ic ~ 150 mA Ic Ic

~

~

150 mA 1A

IB IB IB

~ ~ ~

0.15 0.4 0.8

15 mA 50 mA 100 mA

VCE~10V

VCE ~ 1 V IB IB

~ ~

15 mA 0.1 A

Ic ~ 50 mA Ic ~ 150 mA Ic ~ 500 mA

VCE ~ 1 V VCE ~ 1 V VCE ~ 10V

40 40 25

Transition Frequency

Ic ~ 50 mA

VCE~10V

40


IE

DC Current Gain

• Pulsed: pulse duration = 300 flS, duty cycle = 1 %.

2/2

25°C unless otherwise specified)

Collector-base Breakdown Voltage (IE ~ 0)


.

~

Parameter

35 220

~

0

VCB ~ 10 V

0.35 1.1 1.5

V V V

1 0.85

1.8 1

V V

0.9 1.4

1.2 2

V V

100 90 60

120 MHz

12

25

pF

BC139 AUDIO OUTPUT AMPLIFIER DESCRIPTION The BC139 is a silicon planar epitaxial PNP transistor in a TO-39 metal case. It is particularly designed for use in audio output and driver stages. The complementary NPN type is the BC119.

TO-39


c

::~: s-

B

E

6896

ABSOLUTE MAXIMUM RATINGS Value

Unit

= 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0)

-40

V

-40

V

-5

V

Collector Current

-0.5

A

0.7

Symbol VCBO VCEO VEBO Ic

Parameter Collector-base Voltage (IE

Ptot

Total Power Dissipation at T amb ~ 25°C at Tease ~ 25°C

3

W W

Tst9

Storage Temperature

- 55 to 200

DC

Tj


200

DC

January 1989

1/3

45

BC139 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Ju nction-ambient

58 250

Max Max

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBO

Parameter Collector Cutoff Current (IE = 0)

Test Conditions VCB = - 30 V Vcs = - 30 V

Min.

Typ.

T amb = 75°C

Max.

Unit

- 100 - 50

nA !lA

V(SR)CSO

Collector-base Breakdown Ic=-10flA Voltage (IE = 0)

- 40

V

V(BR)CEO *

Collector-emitter Breakdown Voltage (Is = 0)

Ic=-10mA

- 40

V

V(BR)ESO


IE=-10flA

-5

V

VCE(sat) *


Ic Is Ic IB


Ic=-10mA VCE=-10V Ic =- 100 rnA VCE=-10V Ic =- 300 rnA VCE=-1V

VBE *

hFE *

IT Ccso

DC Current Gain

46

300 rnA 30 rnA 500 rnA 50 rnA

- 0.45

Ic=-10mA VCE=-10V Ic =-100 rnA VCE=-10V Ic =-150 rnA VCE=-1V Ic =- 300 rnA VCE=-1V

- 0.8

V

-1

V

- 0.7

V

- 0.77

V

- 0.97

V

90 40

90 45

20


Ic =- 50 rnA

VCE=-10V


IE = 0 1 = 1 MHz

Vcs=-10V

* Pulsed: pulse duration = 300 ~s, duty cycle = 1 %.

2/3

====-

35 200

MHz pF

6

BC139 Base-emitter Voltage.

DC Normalized Current Gain. G 3211,

G 3213

II

Ie =_50mA

-

VeE =-lV

0.85

lamb =45-<:

1.2

A

i'..

0.8

"

0.75

.......

/ I'...

0.7

0.8

"

/

0.6

.........

I'-..

0.65

o

40

20

60

Collector-emitter Saruration Voltage.

OJ.

r\

[\\

I

nII

~

I

---t-H

........

I

e;;.

-tlt

NORMALIZATION Ie =-IQOmA VCE =-10V

.

, Ii, ,

II , II, .,

10

, ,

10'

-Ie

., (rnA)

Power Rating Chart. G 3215

G 0893

-YCE(sati (v )

6

!!

-1c.=-10IB

ILl ~'I-

~

~,,~

V

~~~ 't"

N

. ..

, 10

..

(!!.;!!;.£ AIR \0 2

-Ie. (rnA)

50

100

3/3

47

BC140 BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC140 and BC141 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for audio amplifiers and switching applications up to 1 A. The complementary PNP types are the BC160 and BC161.

TO-39


c B

E

:~:

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO

Parameter

= 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0) Collector-base Voltage (IE

Value BC140

BC141

Unit

80

100

V

40

60

V

7

V

1

A

Ic

Collector Current

IB

Base Current

0.1

A

Total Power Dissipation at T amb " 45°C at T case" 45°C

0.65 3.7

W W

Ptot Tst9

Storage Temperature

- 55 to 175

°C

Ti


175

°C

January 1989

1/3

49

BC140-BC141 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

35 200

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol

Parameter

ICES

Collector Cutoff Current (IE = 0)

V(BR)CBO

V(BR)CEO'

V(BR)EBO

VCE(sat)

VBE hFE

. .

.

Test Conditions VCEs=60V VCEs=60V

Tamb = 150°C

Max.

Unit

100 100

~

nA

lor BC140 lor BC141

80 100

V V


Ic =30 mA lor BC140 for BC141

40 60

V V


IE = 100

7

V


Ic = 100 mA Ic = 500 mA Ic = 1 A

IB=10mA IB = 50 mA IB =0.1 A

0.1 0.35 0.6

1

V V V


Ic = 1 A

VCE = 1 V

1.25

1.8

V

DC Current Gain

Ic=100~

~

VCE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr. 10 BC140-141 Gr. 16 VCE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr.10 BC140-141 Gr.16 VCE = 1 V BC140-141 BC140-141 Gr. 6 BC140-141 Gr.10 BC140-141 Gr.16

75 28 40 90 40 40 63 100

140 63 100 160

250 100 160 250

26 15 20 30 MHz

50


Ic = 50 mA

VCE=10V

CeBo


IE = 0 1=1 MHz

VeB=10V 25

pF

ton

Turn-on Time

Ic=100mA IBt = 5 mA

250

ns

toff

Turn-olf Time

Ic=100mA IB1 = IB2 = 5 mA

850

ns

IT

• Pused : pulse duration = 300

50

Typ.

Collector· base Breakdown Ic=100~ Voltage (IE = 0)

lor for for lor Ic=100mA lor for for for Ie = 1 A lor lor for for

2/3

Min.

~s,

duty cycle

= 1 %.

12

BC140-BC141 Base-emitter Voltage.

Collector-emitter Saturation Voltage. ) (v)

I

,

+ t

~-

11I

--f---

t--

-

0.5

-

.

-

fL----

[-

-

~H

~

,

IJBEtonJ

!

(v)

II,

I I

vc;Lv-

,

--

I

H- '

,

I,

f--

-t

).1,

,.

--

~t, 'I'

;......-,;

-1----

-

---

0_5

-

-

-

i

,

-

-

--

r..-

1

10

~-

10'

-

10

+--

+-

+--

10'

~ffl 'c(mA)

Transiition Frequency.

DC Curent Gain.

200

c--

I 111111111 I I :1 I: I I 111111111W- l+I' I: I I . 1V i '1 I, -1J'CE· :,tI' fIt- 1 ., I , II!I GR.16 , , , , 1\ / ' ,. , I I, I , ::1____ 1 '~ II'\. I--' Ii-' GR.6

,H

100

..... H'". I! I

I!..i

.

,

T

..

I

~ 1-:11

10

3/3

51

BC142 AUDIO AMPLIFIER DESCRIPTION The BC142 is a silicon planar epitaxial NPN transistor in a TO-39 metal case specially intented for use as driver in high power audio amplifier.

TO-39


c

E


Value

Unit

VCBO

Collector-base Voltage (IE = 0)

80

V

VCEO

Collector-emitter Voltage (Is = 0)

60

V

VESO

Emitter-base Voltage (Ic = 0)

7

V

Collector Current

1

A

0.75

4

W W

- 55 to 175

DC

Ic Ptot T stg , Tj

January 1989

Parameter

Total Power Dissipation at T amb " 25 DC at T case " 25 DC Storage and Junction Temperature

1/2

53

BC142 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

ELECTRICAL CHARACTERISTICS (T amb Symbol

Parameter

=

37

Max Max

200

25 'C unless otherwise specified) Max.

Unit

50 50 80

nA !lA V

Ic = 30 mA

60

V


IE = 100 !lA

7

V

VCE Isat) *


Ic = 200 mA IB = 500 mA

Ic = 20 mA IB = 50 mA

VBE Isat) *


Ic = 200 mA

IB =20 mA

IcBo

Test Conditions


VCB =40 V V CB =40V

VIBR)CBO

Collector-base Breakdown Voltage (I E = 0)

Ic=100!lA

VIBR)CEO *


VIBR)EBO

VBE *


Ic = 200 mA

hFE *

DC Current Gain

Ic Ic Ic Ic

fT CCBO

= 10 mA = 100 mA = 200 mA = 500 mA

Min.

Typ.

T amb = 150 °C

0.15 0.3

2V

0.85

VCE=10V VCE =10V VCE = 2V VCE = 2V

100 100 60 30

VCE =

20

0.4

V V

1.5

V V


Ic = 50 mA f = 20 MHz

VCE =10V

80

MHz


IE =

a

VCB=10V

12

pF

• Pulsed: pulse duration = 300 fls. duty cycle = t %.

DC Current Gain

VS.

Collector Current.

Base-emitter on Voltage

vs. Collector Current.

-

EHJJJ~~1 160

I

75·C

:1,

!

120

25·C

!

'~

80

~

0.1

2/2 54

-

i

1

"sE{onI (v

'VCE =10V

11\ , I

-

0.8

0.6

f-

"I

f-

IIII 10

I

,

_. Ii I

~:

I

IIIIIIII

I

iI

"

I:

40

,

I

I

r--

,

I

!~

-

~ /

o·c

--

IIJ~C

~

0.4

I

,

,,~c

Ii

I

T I

0.2 0.1

10

100

Ie (mA)

BC143 AUDIO AMPLIFIER DESCRIPTION The BC143 is a silicon planar epitaxial PNP transistor specially designed for use in the driver of high power audio amplifiers.

TO-39


::~: ABSOLUTE MAXIMUM RATINGS Symbol VCBo VCEO VEBO Ic Ptot Tstg , Tj January 1989

Parameter

= 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0) Collector-base Voltage (IE

Collector Current Total Power Dissipation at T amb at Tease

25 °C S; 25 °C

S;

Storage and Junction Temperature

Value

Unit

- 60

V

-60

V

-5

V

-1

A

0.75 4

W W

- 55 to 175

°C

1/2

55


Max Max

37 200

ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise specified) Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

-50 - 50

nA J.lA

Collector Cutoll Current (IE = 0)

V cB =-30V VCB = - 30 V

V(BR)CBO


Ic = 100J.lA

- 60

V

V(BR)CEO *


Ic = 10 mA

-60

V

V(BR)EBO


IE = 10 J.lA

-5

V


Ic = 500 mA Ic = lA

Base-emitter Voltage DC Current Gain

ICBo

VCE(sal) VBE hFE

.

. .

hfe Ccso

(T amb = 150 DC)

IB = 50 mA IB = 100 mA

- 0.25 - 0.7

Ic = - 500 mA

V cE =-10V

-1.1

Ic Ic Ic Ic

V cE =-10V VCE=-10V VCE = -1 V VCE = - 1 V

110 110 40 25

= = = =

10 mA 100 mA - 300 mA 500 mA

20

High Frequency Current Gain

Ic = 50 mA I = 100 MHz

V cE =-10V

1.5


IE = a 1= 1 MHz

Vcs=-10V

13

- 0.5 -1

V V V

pF

• Pulsed: pulse duration ~ 300 [Is, duty cycle ~ 1 %.

DC Current Gain

VS.

Collector Current.

Base-emitter on Voltage

VS.

Collector Current.

G -" 506

E

160

I !IIIII

-t

Vc

1

I

i

I

eo

~

40

i

2/2

56

I

I

!

Ii!

....

I 75-C'

,

I

25- C

I~

,

+-O-c ' ! !

I '

I

i, -0.6

-

-0.2 IC(rnA)

I

I

0.1

'-

1·1

c .:t8~ 0'

25'C

I, I

-

-0. 4

100

!'

i

-0.6

I

I

-

iji I

I I II ' Ii II: Ii I 10

veE = -lOV

(V)

-1

I

II I

VBE(on )

,

Ii

Iii

:;:;;:

0.1

-ft~ Jil, I!'~

I

120

E=-10V

7

I

!~

~ I!!/

I

II~

..i-!

'I! i

iil!; -iii

llillt 1

I

! !

I

I I

,,

I IIII 10

100

'C(rnA)

BC160 BC161 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC160, and BC161 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are particurlarly designed for audio amplifiers and switching applications up to 1A. The complementary NPN types are the BC140 and BC141 .

TO-39


:~:

c B

E


Parameter

Value BC160

BC161

Unit

Vcso


- 40

- 60

V

VCEO


- 40

- 60

V

VESO


-5

V

Ic

Collector Current

-1

A

Is

Base Current

- 0.1

A

P'o'

Total Power Dissipation at T amb ~ 45°C at T case ~ 45°C

0.65 3.7

W W

T S '9 Tj

Storage Temperature

- 55 to 175

°C


175

°C

January 1989

1/3

57


Max Max

35 200

ELECTRICAL CHARACTERISTICS (T amb = 25 "C unless otherwise specified) Symbol


ICEs

V(BR)CBO

V(BR)CEO

.

V(BR)EBO

VCE(Sa')

VBE hFE

hFE

·

·

·

.

= 40 V = 60 V = 40 V = 150°C = 60 V = 150 'C

Typ.

Max.

Unit

for BC160 for BC161 for BC160

- 100 - 100 - 100

nA nA j.lA

for BC161

- 100

j.lA


Ic =- 100 j.lA

Collector-emitter Breakdown Voltage (lB = 0)

Ic =- 10 mA


IE = - 100 j.lA


Ic=-0.1A Ic=-0.5A Ic = - 1 A

IB =- 10 mA IB =- 50 mA IB =-0.1 A

- 0.1 - 0.35 - 0.6

-1

V V V


Ic =- 1 A

VCE = - 1 V

-1

- 1.7

V

DC Current Gain

Ic = - 100 j.lA VCE = - 1 V for BC160-161 for BC160-161 Gr. for BC160-161 Gr. for BC160-161 Gr. Ic =-100 mA VCE=-1V for BC160-161 for BC160-161 Gr. for BC160-161 Gr. for BC160·161 Gr.

DC Current Gain

Ic =- 1 A for for for for

for BC160 for BC161

- 40 - 60

V V

for BC160 for BC161

- 40 - 60

V V

-5

V

110 46 80 120

6 10 16

6 10 16

40 40 63 100

VCE=-1V BC160-161 BC160·161 Gr. 6 BC160-161 Gr. 10 BC160-161 Gr. 16

140 63 100 160

250 100 160 250

26 15 20 30

Ic =- 50 mA

VCE=-10V


IE = 0 f = 1 MHz

VCB=-20V

CEBO


VEB =- 0.5 V

f = 1 MHz

ton

Turn-on Time

Ic =- 100 mA IBI = - 5 mA

500

Ic =- 100 mA IBI = IB2 =- 5mA

650

toff

Turn-off Time


58

VCES VCES VCES T amb VCES T amb

Min.


fT CCBO

2/3

Test Conditions

Parameter

~

300 Ils, duty cycle

~

1 %.

50

MHz pF 15

30 180

pF ns ns

BC160-BC161 Collector-emitter Saturation Voltage.

Base-emitter Voltage.

I

I

I

CE= 1V

hFE ,"10

.,/

I

I

I

i

I I I

0.5 I

,I i II II t-- L III

,

i

--

0.5 I I

, ,

I

1

i

, I

Vf "

if-"'"

,

I

II

Ji

10

10

DC Current Gain.

Transition Frequency. G 4516

"FE

I IJII , IllLlu

)

I !llli,!:~!I' 1111 il,:/ , I li~i , !!!I /' I , ' i :\ 1 ,j !i I ! i i' ilii!1 "J i I Y !1: i iilil. .\! VI i I! Illi '\ I

!

VCIC'O V; '

200

! J L. I I III "

iii,

I "

11

GR.16

I

J

r

;'1,

f

I,'

II

100

I

I

i

!!

j

!

II

'.

-

"

, 10

I

I

I

,

,

1

50

I

.II..

10

!'I

i :: I!I!

I I! ' I I II III ,I II. II .

I ,

!

:

! \

I: II II

I

3/3

59

BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case. They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109.

TO-18


c

::1:

B

E


Parameter

Value

BC177

BC178

BC179

Unit

VCES

Collector-emitter Voltage (VBE = 0)

- 50

- 30

- 25

V

VCEO

Collector-emitter Voltage (IB = 0)

- 45

- 25

- 20

V

VEBO


-5

V

Collector Current

- 100

mA

ICM

Collector Peak Current

- 200

mA

P tot

Total Power Dissipation at T amb S 25 'C

300

mW

Ic

T stg

Storage Temperature

- 65 to 175

°C

Ti


175

°C

January 1989

1/4

61

BC177-BC178-B179 THERMAL DATA Max Max


200 500


Parameter

ICEs

Collector Cutoff Current (VBE = 0)

VCE =-20V VCE=-20V


Ic = - 2 mA

Collector·emitter Breakdown Voltage (VBE = 0)

Ic=- lO IlA


IE=-10flA

Collector· emitter Saturation Voltage

Ic =- 10 mA Ic =- 100 mA

IB =- 0.5 mA IB =- 5 mA


Ic = - 2 mA

VCE=-5V


le=-10mA le=-100mA

IB =- 0.5 mA IB =- 5 mA


Ie = - 2 mA f = 1 kHz

VeE=-5V

V(BR)CEO

.

V(BR)CES

V(BR)EBO

VCE(sa!) VBE

.

.

VBE(sa!) h'e

Test Conditions

2/4

62

Typ.

Max.

Unit

- 1

- 100 -10

nA flA

T amb = 150 DC for BCl77 for BC178 for BC179

- 45 - 25 - 20

V V V

for BCl77 for BC178 for BC179

- 50 - 30 - 25

V V V

-5

V

for for for for for • Pulsed: pulsed duration = 300 ~s. duty cycle = 1 %.

Min.

BCl77 BCl77 BC178 BC178 BC179

Gr. Gr. Gr. Gr. Gr.

- 550

A B A B B

-75 - 200

- 250

mV mV

- 640

- 750

mV

-720 - 860

125 240 125 240 240

mV mV

260 500 260 500 500

BC177-BC178-BC179 ELECTRICAL CHARACTERISTICS (continued) Symbol IT CCBO NF

Parameter

Test Conditions


Ic ~- 10 mA I ~ 100 MHz

Collector·base Capacitance

IE

Noise Figure

Ic ~- 0.2 mA Rg ~ 2 kQ B ~ 200 Hz

~

Min.

VCE~-5V

0

VCB

~

- 10 V

Typ.

Input Impedance

5.0

pF

VCE~-5V

I

Ic ~- 2 mA f ~ 1 kHz

~

1 kHz



BC177 BC177 BC178 BC178 BC179

Output Admittance


-Ie (rnA)

dB dB dB

Gr. Gr. Gr. Gr. Gr.

kQ kQ kn kQ kQ

A B A B B

2.7 5.2 2.7 5.2 5.2

Gr. Gr. Gr. Gr. Gr.

A B A B B

2.7x10- 4 4.5x10- 4 2.7x10- 4 4.5x10- 4 4.5x10- 4

~-5

BC177 BC177 BC178 BC178 BC179

A B A B B

25 35 25 35 35

V

Gr. Gr. Gr. Gr. Gr.

flS flS flS flS flS

DC Normalized Current Gain.

. , 6

2

10

BC177 BC177 BC178 BC178 BC179

VCE for for for for for

DC Transconductance.

10 10 4

VCE~-5V

for for for for lor hoe

2 2 1.2

VCE~-5V

for for for for for h re

Unit MHz

for BC177 for BC178 for BC179 hie

Max.

200

VelE

,

,

L51v

1.5

H++++ltlf--I+I-I+H-II--++H++-I+I--+l+fl++ll

6

H-t

T~J.-

2

,

TVP.I

6 .

,

,

,

0.5

:, 2

bt4-1fttHit--HtittHt-+t+ttHtt-+f-t+ftffi

II

2

2

250

500

10-2

4 68

to- 1

2

4 6 8

2

4 68

10

-Ie (rnA)

3/4

63

BCl77-BC178-B179 Collector-emitter Saturation Voltage.

Normalized h Parameters. G-J243

-VCE
!--t--H+Httt-----t

hN~h~,.~-t-~-h~~E~.·-5~V-t-~-hh~O~• .f+-~ f =lkHz

lYP.

I.

2.5 10

7.5

-ICCmA)

-IC(mA)

Normalized h Parameters.

Collector-base Capacitance. G-3244

Ccao (pF)

~~~~~~~~~~~~~~G~_'~"5 f"lMH

1.5 H---t\d----t--+-+-~_t__H--+-+-~_t__H__t__i f-+_t_H"h,'O'~+-Hf-+_t_~++-I-+-H

TYP.

hI

O.5f-+_t_~+-HI-+_t_~+-HI-+_t_~--H

2.5

2.5

Transition Frequency.

7.5

-~a(V)

Power Rating Chart.

(M,!;) t--_t_~-++tttt- t-t-ttltttt-++j-Hm

PtotrT---'-T1'""T'-rr---'-"'""T'-rr---,-,.--'\G~'n241

(mW)H_t_-HI-+-t-H_t__H--+-+-~+_H__t__i

VCE=-5V

100 1--+++-¥H-tt-t-H-+ttttt------jH +-I-tm

, 10-1

4/4

64

..

, 1

,.

, 10

..

-IC(mA)

30

60

80

120

150

r('C)

BC286 AUDIO AMPLIFIER DESCRIPTION The BC286 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is mainly intended for use as audio amplifier. The complementary PNP type is the BC287.

TO-39


c

:~:

B

E


Parameter

Value

Unit

VC80


70

V

VCEO

Collector-emitter Voltage (18 = 0)

60

V

VE80


5

V

Ic Ptot T stg • Tj January 1989

Collector Current Total Power Dissipation at T amb ,.; 25°C at T case ,.; 25°C Storage and Junction Temperature

1

A

0.75

4

W W

- 55 to 175

°C

1/2

65


Max Max

37 200


Parameter

IcBo

Test Conditions

Min.

Typ.

Max.

Unit

20

nA


VCB =30 V


Ic = 100

IlA

70

V


Ic = 30 mA

60

V

V(BR)EBO

Collector-emitter Breakdown Voltage (Ic = 0)

IE = 100

5

V

VCE(sat)


Ic = 500 mA Ic = 1 A

IB = 50 mA IB = 0.1 A


Ic = 500 mA

VCE =2 V

1

DC Current Gain

Ic = 100 mA Ic = 500 mA

VCE =2 V VCE =2 V

90 60


Ic = 50 mA 1= 100 MHz

VCE =5 V


IE = 0 1=1 MHz

VCB=10V

V(BR)CBO V(BR)CEO

VBE hFE

. .

IT CCBO

.

.


2/2

66

IlA

= 300 ms, duty cycle = 1 %.

~

~'"

SriS-THOMSON &'IilOG::OOI!II.IO«:'ITIiI@OOO©1I!

0.4 0.7

20

1

V V V

100

MHz

12

pF

BC287 AUDIO AMPLIFIER DESCRIPTION The BC287 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is particularly intended for use as audio amplifier. The complementary NPN type is the BC286.

T0-39


c

:~:

B

E


Unit

VCBO


- 60

V

VCEO


- 60

V

VEBO


-5

V

Collector Current

-1


0.75

4

A W W

- 55 to 175

°C

Symbol

Ic Ptot T stg , Tj January 1989

Parameter


1/2

67


37

Max Max

200


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.1

50

nA


VCB=-30V


Ic=-1011A

- 60

V


Ic=-10mA

-60

V

V(BR)EBO


IE=-1011A

-5

V

VCE(sat)


Ic =- 500 mA IB =- 50 mA IB =- 0.1 mA Ic =-1 mA

- 0.25 - 0.7


Ic =- 500 mA VCE=-2V

- 0.93

DC Current Gain

Ic =-100 mA VCE=-2V Ic =- 500 mA VCE =- 2 V

90 60

IT


Ic=-50mA f = 100 MHz

CCBO

Collector-base Capacitance (IE = 0)

VCB=-10V f = 1 MHz

ICBo V(BR)CBO V(BR)CEO

VBE hFE

.

. . .

* Pulsed: pulse durallon = 300 I1s, duty cycle = 1 %.

212

68

VCE=-5V

20

-1

V V V

150

MHz

13

pF

BC297 BC298 AUDIO DRIVERS DESCRIPTION The BC297 and BC298 are silicon planar epitaxial PNP transistors in TO-18 metal case. They are particularly intended for use in high current high gain applications, in driver stages of hi-fi equipments or in output stages of low power class B amplifiers. The complementary NPN types are the BC377 and BC378, respectively.

TO-18


c

::4:

B

E


Parameter

Value BC297

BC298

VCES

Collector-emitter Voltage (VES = 0)

- 50

- 30

VCEO


- 45

- 25

VESO


Ie

Collector Current

Is

Base Current

Ptot


Unit V V

-5

V

-1

A

- 0.2

A

375 1

mW W

T stg

Storage Temperature

- 65 to 175

°C

Tj


175

°C

October 1988

113

69


Max Max

100 400

ELECTRICAL CHARACTERISTICS (T case = 25 'C unless otherwise specified) Symbol

V(SR) CEO *

V(SR) ESO

VCE

(sat) *

VSE VSE

.

(sat)

hFE

.

Test Conditions

Parameter Collector Cutoff Curent (VSE = 0)

ICEs

.


For BC297 For BC298

VCE=-50V VCE =-30V

Ic=-10mA

For BC297 For BC298

Min.

Typ.

Max.

Unit

- 100 - 100

nA nA

- 45 - 25

V V V


-5

IE=-10~A


V Ic =- 500 mA Is =- 50 mA


- 0.7


mV

-770

Ic =- 100 mA VCE =- 1 V

V Ic =- 500 mA Is =- 50 mA

DC Current Gain

-1.2

Ic =-100 mA VCE=-1V Ic =-100 mA VCE=-1V Ic =- 300 mA VCE=-1V

Gr.7

75 100 30

260 260


Ic =- 50 mA

VCE=-10V

250

MHz

Ccso


IE = 0

Vcs=-10V

8

pF

CESO

Emitter-base Capaciatnce

Ic = 0

VES =- 0.5 V

30

pF

IT

• Pulsed: pulse duration = 300 fls. duty cycle = 1 %.


10'

•• 'l' ,

10'

2/3

70

I

!i "

II'!

Collector-emitter Saturation Voltage.

li0L-

-~

-TVP

.5V

BC297-BC298 Transition Frequency.

Power Rating Chart.

1600

H-+-H-+l-+i-t--+-H--rH-'H-'--;--,-j

1200 H-+H-+l-++-t--+-H-I--+-+-I--H+--i

800 H-+-H-+l-++-t"d-Hc:,:C-,7j _,+-H--+--1-j

, '.

; 'ii' ~OO~~~~-$R~,,~.~~~~~~~~

10

[i

r-+-

iii 1'11'1 'I'

11111

I

10

50

100

150

T toe)

3/3

71

BC300 BC301-BC302 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC300, BC301 and BC302 are silicon planar epitaxial NPN transistors in TO-39 metal case.They are intended for audio driver stages in commercial and industrial equipments. In addition they are useful as high speed saturated switches and general purpose amplifiers. The PNP types complementary to BC301 and BC302 are respectively the BC303 and BC304.

TO-39


c

:~:

B

E


Parameter

Vcso

Collector-base Voltage (I E = 0)

VCEO

Collector-emitter Voltage (Is

VESO Ic


= 0)

= 0)

Collector Current

ICM


Ptot

Total Power Dissipation at T amb " 25 DC at T case" 25 DC

Value

Unit

BC300

BC301

BC302

120

90

60

V

80

60

45

V

7

V

0.5

A

1

A

0.85 6

W W

T stg

Storage Temperature

- 65 to 175

DC

Tj


175

DC

January 1989

1/3

73

BC300-BC301-BC302 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

25 175

ELECTRICAL CHARACTERISTlCS(T case = 25 "C unless otherwise specified) Parameter

Symbol

Test Conditions

IcBo

Collector Cutoff Current (I E = 0)

VCB=60V

lEBO

Emitter Cutoff Current (Ic = 0)

VEB = 5 V

V(BR)CEO *


Ic=30mA

V(BR)CBO

Collector-base Breakdown Ic = 100 Voltage (IE = 0)

VCE(sat) *


Ic=150mA

VBE*


Ic=150mA

VcE =10V

hFE *

DC Current Gain Gr. 4 Gr. 5 Gr. 6

Ic=150mA Ic=150mA Ic=150mA Ic =0.1 mA Ic = 500 mA

VCE=10V VCE =10V VCE =10V VCE =10V VCE =10V

fT CCBO hie

74

Typ.

Max.

Unit

5

20

nA

10

nA


80 60 45

V V V


120 90 60

V V V 0.2

IB = 15 mA

0.5

V

0.78 40 70 120 20 20

V

80 140 240


Ic = 10 mA

VCE=10V

100

MHz


IE = 0

VCB=10V

12

pF

Input Impedance

Ic = 5 mA f = 1 kHz

VCE=10V


Ic = 5 mA f = 1 kHz

VCE=10V

hte


Ic = 5 mA f = 1 kHz

V cE =10V

hoe

Output Admittance

Ic = 5 mA f = 1 kHz

VCE=10V

= 300 ~s. duty cycle = 1 %.

kG 1.1

hre


2/3

~

Min.

1.7 x 10- 4 140 IlS 14

BC300-BC301-BC302 Collector-emitter Saturation Voltage.


TYP.

10°•

=="

=

•_

V

V .IV

10'

Power Rating Chart.

Transition Frequency. fr F-": _ ("HZ)~"::' .. __

1,'-'J +1-1+

o

50

100

150

T ("1:)

3/3

75

BC303 BC304 MEDIUM POWER AUDIO DRIVERS DESCRIPTION The BC303 and BC304 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended particularly as audio driver stages in commercial and professionnel equipments. In addition they are useful as high speed saturated switches and general purpose amplifiers. The complementary NPN types are respectively the BC301 and BC302.

TO-39


:~: ABSOLUTE MAXIMUM RATINGS Value Symbol

Parameter

= 0) = 0)

Vcso


VCEO


VESO


Ic

= 0)

Collector Current

ICM


ISM

Base Peak Current

P tot

Total Power Dissipation at T amb at T case

25°C ,;:; 25°C

,;:;

Unit

BC303

BC304

- 85

- 60

V

- 60

- 45

V

-6

V

- 0.5

A

-1

A

- 0.5

A

0.85 6

W W

T stg

Storage Temperature

- 65 to 175

°C

Tj


175

°C

December 1988

1/3

77


Max Max

25 175


Test Conditions

Parameter

Min.

Typ.

Max.

Unit

-5

- 20

nA

- 20

nA

ICBO


VCB =- 60 V

lEBO


VEB =- 5 V


Ic=-10mA


Ic =- 150 mA IB =- 15 mA

-0.25


Ic=-150mA VCE=-10V

- 0.78

V(BR) CEO

VCE

(sat)

VBE hFE

. .

IT

. .

DC Current Gain

For BC303 For BC304

Gr.4 Ic=-150mA VCE=-10V Gr.5 Ic =-150 mA VCE =-10 V Gr.6 Ic =-150 mA VCE =-10 V Ic =- 0.1 mA VCE=-10V Ic =- 500 mA VCE =- 10 V

Transition Irequency

Ic =- 50 mA 1= 100 MHz

V V - 0.65

40 70 120 20 20

MHz

15

pF

0.9

kQ

IE = 0

VcB =-10V

Input Impedance

Ic =-5 mA 1=1 kHz

VCE=-10V

hr.


Ic = - 5 mA 1=1 kHz

VCE=-10V

hIe


Ic =-5 mA 1=1 kHz

VCE=-10V

hoe

Output Admittance

Ic =-5 mA 1=1 kHz

VCE=-10V

l.7xl0 ·4 140 45

• Pulsed: pulse duration = 3001'5, duty cycle = 1%.

Collector-emitter saturation voltage.

11'.1' .

11III1

III1I1I to

213

1111:1111 10'

Ii

II ! -Ie (mAl

L..'1 SGS·ntOMSON • 1<

78

V 80 140 240

100



V

VCE=-10V

hie

CCBO

- 60 - 45

IlIiUI:~£ii'II@OOUI:l!

its

BC303-BC304 Transition Frequency.

Collector Cutoff Current. 6-0246

3/3

79

BC377 BC37S AUDIO DRIVERS DESCRIPTION The BC377 and BC378 are silicon planar epitaxial N PN transistors in TO-18 metal case. They are particularly intended for use in high current, high gain applications, in driver stages of hi-fi equipments or in output stages of low power class B amplifiers. The complementary PNP types are the BC297 and BC298 respectively.

TO-18


c B

E


Symbol

Parameter

BC377

BC378

Unit

VCES

Collector-emitter Voltage (VE8 = 0)

50

30

V

VCEO


40

25

V

VE80


6

V

Ic

Collector Current

1

A

18

Base Current

0.2

A

Total Power Dissipation at T amb ,; 25 DC at T case'; 75 DC

375 1

W W

Ptot T stg

Storage Temperature

- 65 to 175

°C

Tj


175

°C

January 1989

1/2

81

BC377-BC378 THERMAL DATA Max Max


100 400


Parameter

V(BR) E80

V(BR) CEO

VCE

(sat)

V 8E • V8E

(sat)

hFE

.

. . .


IE = 10 JlA


Ic = 2 mA


Ic = 100 mA

Base-emitter Saturation Voltage DC Current Gain

Typ.

Max.

Unit

15 15

nA nA

VCE =50 V VCE =30 V

For BC377 For BC378

6

V

40 25

V V

Ic =500 mA IB = 50 mA


0.7 V CE = 1 V

Ic = 500 mA 18 = 50 mA Ic = 100 mA Gr.7 Ic = 100 mA Ic =300 mA

1.2 VCE = 1 V VCE = 1 V VCE = 1 V

75 125 35

V mV

740

V

260 260


Ic = 50 mA

VCE=10V

100

MHz


IE = 0

Vc8 =10V

10

pF

CEBO


Ic = 0

VEB = 0.5 V

30

pF


=

300

~s.

duty cycle


82

For BC377 For BC378

Min.

CC80

IT

2/2

Test Conditions

Collector Cutoff Curent (V8E = 0)

ICES

=

1 %.


BC393 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary NPN type is the BC394.

TO-18


c

::--~r

E


Value

Unit

Vcso


- 180

V

VCEO


- 180

V

VESO

Emitter-base Voltage (Ie = 0)

Ie Ptot

Parameter

Collector Current Total Power Dissipation at T amb <; 25°C at T case <; 25°C

-6

V

- 100

mA

0.4 1.4

W W

T stg

Storage Temperature

- 55 to 200

°C

Ti


200

°C

January 1989

1/3

83


Max Max

125

440


Parameter

Test Conditions


ICBo

Min.

Typ.

Max.

Unit

50 50

I-lA

VeB =- 100 V Vcs =-100 V Tamb = 150 DC

nA


le=-101-lA

- 180

V


le=-2mA

- 180

V

V(BR) EBO

Emiter-base Breakdown Voltage (Ic = 0)

I E =-101-lA

-6

V

VCE (sat)'


V(BR) cso V(BR) CEO

.

VBE (sat) •

hFE

.

Ic=-10mA Ie =- 50 mA

IB =- 1 mA IB =- 5 mA

-100 - 230

- 300

mV mV

le=-10mA Ie =- 50 mA

IB = - 1 mA IB =-5 mA

- 750 - 850

- 900

mV mV

Ie =- 1 mA le=-10mA

VCE=-10V VeE=-10V

50

85 100

Ic=-10mA

VeE =-10V

50

95

IE =0 1=1 MHz

VCB=-10V

Base-emitter Saturation Voltage DC Curent Gain Transition Irequency

IT


CCBO


4

= 300 ~s, duty cycle = 1 %.

DC Current Gain.

Collector-emitter Saturation Voltage. (.-3059

hFE

i ,

120

1111111

11111

IIIIE' 1llliii!

IIII :Iili

100

V I!

60

25'C

lilll 11-55":5-

I

'V

v-

40

0.2

tml

i1ii

0.15

I,

Ill!("

80

(V)

!II'

i'Tamb =125"(.

I

-VCE
' ~ 'I! I i

I

I'll , "I Iii I

0.1

lll~~

0.05

VeE =-10V

20

I 10-3

2/3

10-2

10-1

111II1I1I I !II!IIII 10-'

10 -Ie (rnA)

r== SCS.1HOMSON

A.""!I 84

r--+-+-+t-tHtt

I

filli)DICIiII@W!.~L'II@I!D©@

MHz

7

pF

BC393 Transition Frequency.

Base-emitter Saturation Voltage. VBE(satl ,---,--r--rTTTTr

IV) 0.8

80

0.6

60

0.4

40

20

10- 1

10

-Ie (rnA)

10- 1

10

-Ie (rnA)

3/3

85

, I I I I I I

I I I

I I I

I I I

I I

I I I

I I I I I I I

I I I

I I I

I I I

I I

I I I I I I I I I I

I I I

I I I

I I

I I I

I I I I I I I

I I I

I I I

I I I

I I

I I I

I I I I I I I

I I I

I I I

I I

I I I I

BC394 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary PNP type is the BC393.

TO-18


c

E

:~:

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic Ptot

Parameter

Value

Unit

= 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0)

180

V

180

V

6

V

Collector Current

100

mA

Total Power Dissipation at T amb <;: 25°C at T case <;: 25°C

0.4 1.4

W W


T stg

Storage Temperature

- 55 to 200

°C

Tj


200

°C

January 1989

1/3

87


Max Max

125 440


Parameter

Test Conditions


ICBo

VCB=100V VCB=100V

Min.

Typ.

Max.

Unit

50 50

nA J.tA

T amb = 150°C

V(BRI CBO


Ic = 100

J.tA

180

V

V(BRI CEO *


Ic=10mA

180

V

V(BRI EBO


IE = 100

6

V

VCE (satl *

Collector-emitter Saturation Voltage Base-emitter Saturation Voltage

VBE(satl*

DC Curent Gain

hFE *

Transition frequency

fT


CCBO


=

300 Ils. duty cycle

=

J.tA

Ic = 10 mA Ic = 50 mA

IB = 1 mA IB = 5 mA

200 400

300

mV mV

Ic = 10 mA Ic = 50 mA

IB = 1 mA IB = 5 mA

750 850

900

mV mV

Ic = 1 mA Ic=10mA

VCE=10V VcE =10V

30

85 100

Ic = 10 mA

VCE=10V

50

95

MHz

IE = 0 f = 1 MHz

VCB=10V 5

pF

1 %.

DC Current.

Collector-emitter Saturation Voltage. G-4518

i, , 120 100

II II II

11111li1 I II II! IIIII!II I I I ii' 1IIIllii .1['1 '-'I I . jiTamb =125·~ I' I!' II' .' J..I.I ,I I !i, ..i-W

I I II I ! Ii I!III~ I;! 125°C, I I!IIII; II IilIr"I ! I ! III!!III ·1 i!1I I , , i.J.i11ir! :i- 5S·Y ., I ! I IIV II!III', ..u- ,'I I I ,,' I ,iYli! i'lli ! I 'I ' Ilii: I' ' '11"i VCE = 10V j.. I IIIII!II II 11 11 11, I I I 1I1!1I11 II 111111111 I Iii II III il II I

80 60 40

20

10

2/3

88

G 4519

"CE(sat )

0.2

,

! .

:,

0.1 '

!

I: :

I! iii, Ie (rnA)

Q05

I

,I

0,15

-.......

I i=:::.l '

,

j I ! I

,

Toilmb

N

=_55·C 1

, ,i I,

25'C

.

'!

ij)

I

IV:

i

i

!"

II!

/ /:1 ii' ,V YI I, II!/ ' i Ii I

I'

i

Iii i iii

I

, , , 111I

I!

~

I

125-

III

ill

!

II

le= lOi B

! ,

! III :i Tn'! "

III

II

(V)

. 10

i:

,

i

Ii,, ,

, , , Ie

.

(rnA)

BC394 Transition Frequency.

Base-emitter Saturation Voltage. VSE(sat)

G 4521

,-"-rnmr--r",-rrrrr--,-";::,;';,,

(V) 0.8

0..6

Ii

l--t-++J.I-!1'!i""'

60.

_I i)'11 I~'

y'i

20. /

j'

III'

'III' :

,.

I ,i III 10-'

10.

Ie (rnA)

10-'

Illillll

',,'I

"'. "I.

,ii," III

i

I i Iii!

• I !I

!

40.

0.2

-nJlll!' YT I i

,II!

f---l-1f-+++HtI,IV-A--+! hl+llliIII

!ill'l

,VCE"'o.V',',

t"2D"'~W!1

"~I'

Iii

I II 10

Ie

I

(rnA)

3/3

89

BC440 BC441 MEDIUM POWER AMPLIFIER DESCRIPTION The BC440 and BC441 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are intended for general purpose applications, especially for drive r stages. The complementary PNP types are respectively the BC460 and BC461.

TO·39


c

E

ABSOLUTE MAXIMUM RATINGS Value Symbol

Parameter

= 0) = 0)

BC440

BC441

Unit

50

70

V


40

60

V

VCER

Collector-emitter Voltage (RBE " 100 0)

50

70

V

VEBO


VCBO VCEO(sUS)


= 0)

5

V

ICM


2

A

Ptot


1 10

W W

T stg

Storage Temperature

- 65 to 200

°C

Tj


200

°C

January 1989

1/2

91



17.5 175

ELECTRICAL CHARACTERISTICS (T case = 25 'C unless otherwise specified) Parameter

Symbol


leER

Collector Cutoff Current (RBE = 100 0)

V(BRI EBO

. .

V(SRI CEO

VCE (satl

VBE (satl hFE

.

Typ.

VCB=40V For BC440 For BC441

Max.

Unit

100

nA

10 10

!IA !IA

VCE = 50 V VCE = 70 V

Emitter Base Breakdown Voltage (Ic = 0)

IE = 100!IA


Ic =10 mA

For BC440 For BC441


Ic = 1 A

Is = 100 mA

1

V


Ic = 1 A

Is = 100 mA

1.5

V

DC Current Gain

Gr. 4

Ic = 500 mA VCE =4 V Ic = 500 mA VCE = 4 V Ic = 500 mA VCE = 4 V Ic = 1 A VCE = 2 V (for BC440 only)

Gr. 5 Gr. 6

iT

Min.

Test Conditions

ICBo


Ic =50 mA

VCE =4 V

5

V

40 60

V V

40

70

60

130

115 20

250

MHz

50

• Pulsed: pulse duration = 300 !ts. duty cycle = 1 %.

DC Normalized Current Gain. hFEN

I

IIII!I!

I lilli


1111111 i ttl! llllii1

VCEsat

1111.

I

LJ.JlULl!----l'.J'-&' :~·I!T'-i-'1~"-H#-+t+IIIH+HI-11-++i-H"fiI'" l.' II" Ii I!. I: 'II

(VI

I

'"II! i'::II;1

(18

1'1,

,II

0.5

92

I

i

I'

0.6

I

I

"

I

I ill, "

I

I)A',

!

'I:

I

0.4

! I I I, ,

,I I

V:' I

II

Ii

I

.

I:

I'·

I!

S~I"l'~115=Ei=Emw"E' =a~'~ ;,1

~

1-'

I

10

to'

10'

"1,

'I

I'll

I

I

Ie (mAl

, II

:1.'

,/

0.2

.!'

10-1

2/2

':1

,Ii'

':1

; I' i: i!

, I ,

I,,:,;.

. ',

,I

I

'i: 1'1:11

hF£=10 11':

I" "

10.1

to

10'

to'ldmAI

BC460 BC461 MEDIUM POWER AMPLIFIER DESCRIPTION The BC460 and BC461 are silicon planar epitaxial PNP transistors in TO-39 metal case. They are intended for general purpose applications, especially for driver stages. The complementary NPN types are respectively the BC440 and BC441 .

TO-39


c

:::4:

B

E


Parameter

= 0) = 0)

BC460

BC461

Unit

- 50

-70

V


- 40

- 60

V

VCER

Collector-emitter Voltage (RBE ,,; 100 0)

- 50

-70

V

VEBO


VCBO VCEO(SUS)

Collector-base Voltage (I E

= 0)

ICM


Ptot

Total Power Dissipation at T amb ,,; 25°C at T case"; 25°C

-5

V

-2

A

1 10

W W

T stg

Storage Temperature

- 65 to 200

°C

Tj


200

°C

October 1988

1/2

93



17.5 175

ELECTRICAL CHARACTERISTICS (T case = 25 OC unless otherwise specified) Symbol

Parameter

V(BR) EBO

VCE VBE

(sat)

(sat)

hFE

. . .

.

For BC460 For BC461

- 100 -10 -10

VCE = - 50 V VCE=-70V

IE =-100j.lA


Ic =- 10 mA

For BC460 For BC461


Ic =- 1 A

IB =- 100 mA

- 1


Ic =- 1 A

IB =- 100 mA

- 1.5

-5 - 40 - 60

V V V

Gr.4

Ic =- 500 mA VCE =-4 V Ic =- 500 mA VCE=-4V Ic =- 500 mA VCE=-4V Ic =- 1 A VCE=-2V (for BC460 only) Ic =- 50 mA

40

70

60

130

115

250

20

VCE=-4V

50

MHz

= 300 l1s. duty cycle = 1 %.



h",,,-rn-nm---,rrnll"" '!II"TIIT~~~"-,'\'!m, ,'I

. , Ih ?V+''!i-' ---H-H+f!+-t+t4+Jjl--+++H~ H++H++I--'

I--

H

- 'h,•• r-'"TTmIlTTr II TTl"TTT1T"Tl11TTTT"....,--rmmr...,-j'i'1'i'm ( V) r---t+!i1t,tit!--'-tt-"f"---:-t,-i-l*ltt-i-tt-ttlti!

••.

~~~-~ ~~~~!t-cr~~~~~

0.81--,-++'lin i+-'''Ef h, ..;-=.-·t~O_-+c..I-+!+--+H++'+tf-+++++llII Ii;

;! , I

II' "

,

.....

0.6

-r; Ii ,

I

, ,.

I,i

, ,

0.4

1

1111 1111

94

*,#---'--'-'+I+1t-t+Httti,I-HI-t+ttttIt

I-- i,~)-tt'ii--+,

"'1

illi

2/2

*'+i!t--+-H+tttl

1

! :

10-1

j:

r---t+m1+--+tp~~ HfHiit--t' 1:

~.

j.lA

J.lA

V



Unit

V

Gr.6

05

Max.

nA

Gr.5

15

Typ.

Emitter Base Breakdown Voltage (Ie = 0)

DC Current Gain

fT

Min.

VCB=-40V

Collector Cutoff Current (RBE = 100 0)

ICER

V(BR) CEO

Test Conditions


ICBo

to

,1'1

,III

'J-W

1111

10'

103 -Ie (mA)

10-1

,',

,

' ,'I 10

I

IV 'I!II 10'

10' -lc(mA)

BC477 BC478-BC479 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC477, BC478 and BC479 are silicon planar epitaxial PNP transistors in TO-18 metal case. The BC477 is a high voltage type designed for use in audio amplifiers or driver stages, and in the signal processing circuits of TV sets. The BC478 and BC479 are respectively low noise and very low noise types, designed for general preamplifier or amplifier applications.

TO-18


:: ~: ABSOLUTE MAXIMUM RATINGS Symbol VCES

Collector-emitter Voltage (VSE

VCEO


VESO


Ic Ptot

Value

Parameter

~

~

~

0)

0)

0)

Collector Current Total Power Dissipation at T amb 0; 25 'C at T case 0; 25°C

Unit

BC477

BC478

BC479

- 90

- 40

- 40

V

- 80

- 40

- 40

V

-6

V

- 150

mA

0.36 1.2

W W

T stg

Storage Temperature

- 55 to 200

°C

Tj


200

°C

January 1989

1/5

95

BC477-BC478-BC479 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

t46 485


lEBo V(BR)CES

V(BR)CEO

V(BR)EBO

VCE(sa!)

VBE

.

VBE(sa!)

hFE

.

Parameter Collector Cutoff Current (VBE = 0)

ICEs

. .

Test Conditions

Emitter-cutoff Current (Ic = 0)

V EB = - 4 V

Collector-emitter Breakdown Voltage (VBE = 0)

Ic=-10~


Ic = - 5 mA


IE=-10~A


Ic IB Ic IB


Ic = 2 mA


Ic = - 10 mA IB = - 0.5 mA Ic = - 100 mA IB=-5mA

DC Current Gain

Ic=-10~

Ic = - 10 mA


Ic = - 2 mA f = 1 kHz

Ic=-10mA f = 20 MHz • Pulsed: pulse duration = 300 ~s, duty cycle = 1 %.

2/5

96

Typ.

Max.

Unit

- 10 -10

nA ~

-10 -10

nA ~ nA

-10


- 90 - 40 - 40

V V V


- 80 - 40 - 40

V V V

-6

V

=- 10 mA =- 0.5 mA =-100 mA = - 5 mA

Ic = - 2 mA

hIe

Min.

for BC477 VCE = - 70 V VCE =-70V T amb = 125 'C for BC479·BC478 VCE =-30V VCE =-30V T amb = 125 'C

- 0.1

- 0.25

- 0.3 VCE=-5V

- 0.55

V

- 0.65

- 0.75

V

- 0.75

- 0.9

V V

- 0.9 VCE=-5V for BC477 for BC478 for BC479 VCE=-5V for BC477 for BC478 for BC 479 VCE=-5V for BC477 for BC478 for BC479

30 50 100

115 195 290

110 110 200

250 450

160 270 350

VCE=-5V for BC477 for BC478 for BC479 VCE =-5 V

V

125 125 220

260 500

7.5

BC477-BC478-BC479 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter

Test Conditions

Min.

CeBo


IE

~

0

CEBO


Ie

~

0

NF

Noise Figure

Ie ~ - 20~A VeE~-5V Rg ~ 10kQ I ~ 10Hz to 10kHz B ~ 15.7 kHz lor BC479

NF

Noise Figure

Ie ~ - 200 ~A VeE~-5V Rg ~ 2 kQ I ~ 10Hz to 10kHz B ~ 15.7 kHz lor BC478 lor BC479 Ic ~ - 20~A VeE~-5V Rg ~ 10 kQ I ~ 1 kHz B ~ 200 Hz lor BC479 Ie ~ - 200 ~A VeE~-5V Rg ~ 2 kQ I ~ 1 kHz B ~ 200 Hz lor BC477 lor BC478 lor BC479

Typ.

Max.

Unit

4

6

pF

11

15

pF

0.8

3.5

dB

1.5 1

4

dB dB

0.5

2.5

dB

2 1.2 0.8

10 6 4

dB dB dB

VCB~-5V

VEB

~

- 0.5 V

• Pulsed: pulse duration = 300 fls, duty cycle = 1 %.


Collector Cutoff Current.

(V)

,

-I CSO

-VCE(sat )

(,lolA.)

111111

~ := BC478

VCE =-30Y

f--

VCE

8(477

le-2Ol e

0.'

~

8C479

VCE,,-70V

/

=-30V

/

0.3

/

0.2

.

I---

0.1

V 10

10 2 -'C(mA)

25

50

75

3/5

97

BC477-BC478-BC479 Collector-base Capacitance.

Transition Frequency. G-J226

Cceo

'T

,--

(pF)

(MHz)

IE =0 ...-

10

I

!

\

1-:---

I

f

\ \

.-f--- -

-

.t--

/

160

120

\

,

\

-

-

-.-

-

-

80

I

,

--

- --

40

/

I VeE =-5V

2

10

20

15

-Vea

R9

'\

10

"'

-"ffi'\1\

_L

~~ ~ "-

R9 (kill

·IX

'"

IdB

4

5

-

-

"

"'- i'3

,

r-

,.

, II,

,.

-Ie (rnA)

:1'\: ..

r·

VeE =.:sv f = 1 kHz B =2OOHz

6

~ j\.

1+

~1\

IdB

./

J

:~ ,

,I"-

"-

, ,

VeE =-5V f =lkHz

BTn

,

10'

,

:~ 10

2

2

Noise Figure (for BC478 only).

f-

1<--

,. 10

G_3221

, ,

,

(V 1

Noise Figure (for BC477 only). (kfl)

1

__ V'

......... r-.!

2

3

+...

~

,.

-.....: 10- 2

, "10-'

,

10-1

,.

-IC(mA)

Noise Figure (for BC479 only).

~r-10-2

Noise Figure (for BC479 only). G 3230

R9 (kIl.)ij

..

"

6

"~

VCE =-5V

f:l0Hz 1010kHz B =15.7 kHz

........

I'-..

10

" ,

.........

I

i'.4

'"

3

l/

dB

...........

"-

3

.r--

" , ,

2

rr-

3

4 6

~

-- .

"

-le(mA)

4/5

98

BC477-BC478-BC479 Noise Figure vs. Frequency (for BC479 only).

Power Rating Chart. G_J232

G 3231

NF

Plot

(dB)

111111111

(WI

llllll~

L

VeE =-5V Rg =2kO Ie =-lOO}JA

1\

~~

()'B

'''1--<;-

1:-10.8

\

~?~

~'-

().4

"II€. f! <4/~ 0.1

10

10'

IO J

10'

105

t (Hz)

50

100

ISO

200 lamb (.()

5/5

99

BCY58 BCY59 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, They are intended for use in audio input stages, driver stages and low-noise input stages, The complementary PNP types are respectively the BCY78 and BCY79,

TO-18


c

:~:

Br"-.

NPN

E


Symbol

Parameter

BCY58

BCY59

Unit

VCES


32

45

V

VCEo


32

45

V

VESO


Ic Is Ptot T stg , Tj January 1989

Collector Current Base Current Total Power Dissipation at T amb ,; 25 'C at T case'; 45°C Storage and Junction Temperature

7

V

200

mA

50

mA

0,39 1

mW W

- 65 to 200

°C 1/4

101

BCY58-BCY59 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICES

ICEX

Parameter Collector Cutoff Current (VSE = 0)

Collector Cutoff Current (VBE = - 0.2 V)

Test Conditions For BCY58 VCE=32V VcE =32V For BCY59 VCE=45V VCE=45V For BCY58 VcE =32V For BCY59 VCE =45 V

Max.

Unit

Tamb = 150°C

0.1 0.1

10 10

~A

Tamb = 150°C

0.1 0.1

10 10

nA ~

Tamb = 100°C

20

~

Tamb = 100°C

20

~ nA

VES = 5 V


Ic = 2 mA

(SR)ESO *


IE =10 ~

VCE(sat) *

Collector-Emitter Saturation Voltage

Ic = 10 mA Ic = 100 mA

IB = 0.25 mA IB =2.5 mA


Ic = 2 mA Ic = 100 mA

VCE = 5 V VCE = 1 V


Ic = 10 mA Ic = 100 mA

Is = 0.25 mA Is = 2.5 mA

DC Current Gain

Ic =10~

VCE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X VCE = 5 V Gr.VII Gr.VIII Gr.IX GrX VCE = 1 V GrVIl Gr.VIII Gr.IX Gr.X VCE =1 V Gr.VII Gr.VIII Gr.IX GrX

V(BR)CEO *

VBE VSE(satl* hFE *

Ic = 2 mA

Ic =10 mA

Ic =100 mA

*

Typ.

Emitter cutoff Current (Ic = 0)

lEBO

Pulsed: pulse duration = 300 I's, duty cycle = 1 %.

2/4

102

Min.

10 For BCY58 For BCY59

nA

32 45

V V

7

V 0.12 0.4

0.35 0.7

V V

0.55

0.65 0.75

0.7

V V

0.6 0.75

0.7 0.9

0.85 1.2

V V

195 100 140 195 280 350 170 250 350 500 365 175 260 365 520

630 220 310 460 630

20 40 100 120 120 180 250 380 80 80 120 160 240 40 40 45 60 60

BCY58-BCY59 ELECTRICAL CHARACTERISTICS (continued) Symbol hie

Parameter

Test Conditions


Ie = 2 mA f = 1 kHz

Min.


Ie =10 mA 1= 100 MHz

VeE = 5 V

C EBO


Ie = 0 1=1 MHz

VEB = 0.5 V

C CBO


IE = 0 1=1 MHz

VCB=10V

NF

Noise Figure

Ic =0.2 mA Rg = 2 kQ

VCE = 5 V 1=1 kHz

ton

Turn-on Time

Ic = 10 mA IB1 = 1 mA Ie = 100 mA IB1 = 10 mA

Vcc=10V

toll

Turn-off Time

Pulsed: pulse duration

DC Current Gain.

=

300 .us. duty cycle

Unit

250 350 500 700 200

MHz

11

15

pF

3.5

6

pF

2

6

dB

85

150

ns

55

150

ns

480

800

ns

480

800

ns

Vcc = 10 V

Ic = 10 mA Vcc=10V IB1 =-IB2=1mA Ie = 100 mA Vee=10V IB1 =-IB2=10mA =

Max.

125 125 175 250 350

Gr.VII Gr.VIII Gr.IX Gr.X

IT

Typ.

VeE = 5 V

t %.

Collector-emitter Saturation Voltage. VCE(sat)

(v)

8

A

6

, 1

,~ 8

I

lie ,,"OIB'i

II

~

lCI Tam~ "100J5C Q

l.I

J-

6

, ,

-50·C

1

i '0

3/4

103

BCY58-BCY59 Transition Frequency.

Collector-base Capacitance. G 1849

'T

G 3171

CCBO (pF)

(MHz) VCE =5V

200

fO

/"

!

I

I 6 1\

'E

1/

,

I'\.

I

r"'h. .

I

100

10

Noise Figure (f

,-I'-.

.I

I!i'\.'

.=

1\

""

'r

'"

1\."

4

4

,

TT, "

",-' Noise Figure (f

+-r1 10-2

10

2

,

3

,

'"

4

~

"[

I

, "

TI ~~

!--.

10- 1

I

Ie (rnA)

I

11111111

~

~N;:

'i~1I

VeE" Rg= 2kfi Ie = 200,uA

6 -

K

1

f'

4

2

veE =5V

f _10kHz,

"llklHIIIII

i5

~rnJ

G -J> 75

NF (dB)

6

,

B

I

Noise Figure vs. Frequency.

t=-

-"

"'" 'r" ,

5

T"j..,

4

6 8

I

4

10. 1

r-i

[I' i*...'t--,..

10-1 L-...L.-LlJ.llLlL...-L~!UlJ~...J......L:l"",,"lJJ

104

,

G-

:~r-1"

4/4

VeE = SV f :::lkHz

2

= 10kHz).

(kM '~-

,

mlK~

j...

Ie (rnA)

,

," ,

~f'

'Rr

,

~5":::;;;

,

~'\*

I'

i'........ "

,"

B= 20Hz

IT

,,-

I\.

fdB

" '~t'\ ,

3

6~~:E'~~tl

Rg

fO

,

'['\1' "

t\-

2 .

t--...."

= 1 kHz).

" ,-" k.:

(kO)

"

r......:-... '''"''I'-.

25 VeerV)

20

15

G-3173

Rg

+-t

I"Ir 'fdB"

,

G·3171

,

,'10

fO

= 100 Hz).

."

,

'

rm~ 2H=f_ ---"

1 1

80

-~-

t-!~

•

,

I

~. 4

I

,

Rg (kO)

+=1_

,0

,

I

G

I

e-/ -+--1

Noise Figure (f

-

~

y.

IGO

120

I

I

f:100MHz

160

140

I

6 B

lC(mA)

0

10

ill -:'11 SCiS-niOMSON ~U©iiI@rn~rn©1i'iiI@IllIl©@

10'

lOS

f(Hz)

BCY70 BCY71/BCY72 GENERAL PURPOSE APPLICATIONS DESCRIPTION The BCY70, BCY71 and BCY72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case.

TO-18


ABSOLUTE MAXIMUM RATINGS Symbol VCBO


VCEO

Collector-emitter Voltage

V E80


•

(18

= 0)

ICM


Ptot

Total Power Dissipation at T amb

T stg , Tj

:s



October 1988

Value

Parameter

25°C

Unit

BCY70

BCY71

BCY72

- 50

- 45

- 25

V

- 40

- 45

- 25

V

-5

V

- 200

mA

350

mW

- 65 to 200

'C

= 300 fls. duty cycle = 1 %. 1/5

105

BCY70-BCY71-BCY72 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max


IESO VCE(sat)' VBE(satl

hFE

,

Parameter Collector Cutoff Current (VBE = 0)

ICES

,

Test Conditions

VES =-5 V


Ic =- 10 mA Ic =- 50 mA

Base-Emitter Saturation Voltage

Ic = - 10 mA IB =- 1 mA For BCY70 and BCY71 Only IB = - 5 mA Ic =- 50 mA For BCY70 Ic=-0.1mA Ic =- 1 mA Ic=-10mA Ic =- 50 mA For BCY71 Ic =- 0.01 mA Ic =- 0.1 mA Ic =- 1 mA Ic =- 10 mA Ic =- 50 mA For BCY72 Ic=-1 mA Ic =- 10 mA

Is = - 1 mA IB =- 5 mA

40 45 50 15

VCE = - 1 V VCE = - 1 V VCE = - 1 V VCE=-1V VCE=-1V

80 90 100 15

VCE=-1V VCE = - 1 V

40 50

Small Signal Current Gain (lor BCY71 only)

Ic =- 1 mA 1=1 kHz

VCE=-10V

h


Ic =- 0.1 mA 1= 10.7 MHz

VCE=-20V

- 100 -10

JlA

nA

nA

-10

JlA JlA

- 0.25 - 0.5

V V

- 0.9 - 1.2

V V

60

100

600

400

250 200

MHz MHz

CCBO


IE = 0 1=1 MHz

VCB=-10V

106

nA nA

For BCY70 For BCY70 and BCY72 VEB = - 1 V

2/5

-10 - 500

MHz

Ic = 0 1=1 MHz

duty cycle = 1 %.

Unit

15


~s,

Max.

For BCY71 VCE=-20V

CESO

Pulsed: pulse duration = 300

- 0.6

VCE = - 1 V VCE =- 1 V VCE =- 1 V VCE=-1V

hIe

Ic =- 10 mA 1= 100 MHz

•

Typ.

- 100 -10

Emitter cutoff Current (Ic = 0)

DC Current Gain

Min.

For BCY70 VCE = - 20 V VCE = - 50 V For BCY71 VcB =-20V VCB = - 45 V For BCY72 VCB = - 20 V Ves = - 25 V

8

pF pF

6

BCV70-BCV71-BCV72 ELECTRICAL CHARACTERISTICS (continued) Symbol NF

hie hre hoe td tr ts t, ton toll •

Parameter

Min.

Test Conditions

Noise Figure

Typ.

Max.

Unit

6 2

dB

Ic =- 0.1 mA VCE=-5V Rg = 2 kQ f = 10 to 10 000 Hz For BCY70 and BCY72 for BCY71

Input Impedance (for BCY71 only)

Ic =- 1 mA f = 1 kHz

VCE = - 10 V

Reverse Voltage Ratio (for BCY71 only)

Ic=-1 mA f = 1kHz

VCE=-10V

Output Admittance (for BCY71 only)


VCE = - 10 V

Delay Time (for BCY70 and BCY72 only)

Ic = - 10 mA 181 =- 1 mA

VEE = 3 V

Rise Time (for BCY70 and BCY72 only)

Ic =- 10 mA 181 =- 1 mA

VEE = 3 V

Storage Time (for BCY70 and BCY72 only)

kQ 2

12 20x10- 4 ~S

10

60 ns 23

35

25

35

Ic = - 10 mA VEE = 3 V 181 =-182=-1 mA

270

350

Fall Time (for BCY70 and BCY72 only)

Ic =- 10 mA VEE = 3 V 181 =-182 =-1 mA

50

80

Turn-on Time (for BCY70 and BCY72 only)

Ic = - 10 mA 181 =- 1 mA

48

65

Turn-off Time (for BCY70 and BCY72 only)

Ic=-10mA VEE = 3 V 181 =- 182 =-1 mA

320

420


dB

ns ns ns ns

VEE = 3 V

ns

= 300 fl.s, duty cycle = 1 %.

TEST CIRCUIT Test Circuit for Switching Times.

VEE = 3.0V

Vi

o----J I-~---{=r~+-f<" ,

-20v~1f lf1S-J 1-

Vo I ,

I

ltd! t r

ton ,--,

I

I

-

-10-'.

:.!3-:l1.:

I

1-·-1

:~:

I

5- 4 615

:

I

I

5-4616

3/5

107

BCY70-BCY71-BCY72 Collector-emitter Saturation Voltage.

Base-emitter Saturation Voltage. G·2018

)

-VBE(sat )

"FE .-to

(v)

hFE =10

t.2

Tam b=125-Y

I

to'

,

~ ...V'

Tam b=-5S·C

0.8

~

~

0.6

,

0.4

:i

ill ,

to- ,

-

V

125-C

0.2

.

,

to

10. 1

10

G 1851

G 1850

'T (MHz ) VCE =-20V

VeE =-1

/BCn(

V /

f=lOOMHz

150 BCV71

300

>-n >-n BCY

100

50

II

/

//

200

BeV71

BeY7

V

/ /

BCY72

/

I-""

1// /

100 2

468

10- 2

2

'10- 1

10

4" -Ie (rnA)

Collector-base Capacitance.

to

Equivalent Input Noise Voltage (for BCY71 only). G 1853

G 1852

CCBO (pF)

,; VCE =-5V

\ \

"

I

II

i'-

-

to

r-r--_

10

20

I

i

---I i I I I

,

I

II

I

!

-10 ....

......

30

+f-t' I

I ,

i

I.

-lOrnA

-100).lA

-.......

II IIII-,m I

108

i

IE= , I)JA

\..

4/5

+!

d

t=IMHz

,

i

Ii

I

Ii I

.-

! 10

,

I f (kHz)

BCV1O-BCV71-BCV72 Equivalent Input Noise Current (for BCY71 only).

Countours of Constant White Noise Figure (for BCY71 only).

/11:•• SGS·ntOMSON •J.

5/5

IlIilUi:Iii@~tw:'ii'IiiI@001IC1ll

109

I I I I I I I I I I

I I I I

I I I I I I I I I I I I I I

I I I

I I I I

I I I I I I I I I I

I I I I

I I I

I I I I I I I I I I I

I

BCY78 BCY79 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY78 and BCY79 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case.They are designed for use in audio driver and low-noise input stages. The complementary NPN types are respectively the BCY58 and BCY59.

TO-18


c

::-~r

80--+£

NPN

E

3_6896


Parameter

= 0) = 0)

BCY78

BCY79

Unit

VCES


- 32

- 45

V

VCEO


- 32

- 45

V

VESO


Ic Is

P'o' Ts,g, Tj October 1988

= 0)

-5

V

Collector Current

- 200

mA

Base Current

- 20

mA

Total Power Dissipation at T amb ,,; 25°C at T case ,,; 45°C

390 1

mW W

- 65 to 200

°C


1/5

111

BCV78-BCV79 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max


Parameter

lEBo V(BR)CES

V(BR)CEO

.

V(BR)EBO VCE(sat) VBE

*

.

.

VBE(Sat)

.

112

For BCY78 VCE=-32V For BCY79 VCE = - 45 V


VEB = - 4 V


Ic=-10flA


Max.

Unit

-2

- 20 - 100 - 10

nA nA flA

-2 T amb = 150 'C

- 20 - 100 -10

nA nA flA

T amb = 100°C

- 20

flA

T amb = 100°C

- 20

flA

T amb

Min.

= 150 'C

- 20

- 32 - 45

V V

For BCY78 For BCY79

- 32 - 45

V V

Ic =-2 mA

IE = - 1 flA


I c =-10mA Ic =- 100 mA

IB = - 0.25 mA IB =- 2.5 mA


Ic=-10flA Ic =- 2 mA Ic=-10mA Ic =-100 mA

VCE VCE VCE VCE


Ic=-10mA Ic =- 100 mA

IB = - 0.25 mA IB = - 2.5 mA

=

300 J1,s, duty cycle

=

nA

For BCY78 For BCY79



2/5

For BCY78 VCE=-25V VCE=-32V VCE =-25 V For BCY79 VCE=-35V VCE=-45V VCE=-35V

Collector Cutoff Current (VBE = 0.2 V)

IcEX

Typ.

Test Conditions


ICEs

1 %.

V

-5

= = = =

-5V -5V - 1 V -1V

- 0.12 - 0.25 - 0.4 - 0.8

V V

0.55 0.65 - 0.75 0.68 0.75

V V V V

- 0.7 - 0.85 - 0.85 - 1.2

V V

- 0.6 - 0.6 - 0.7

BCY78-BCY79 ELECTRICAL CHARACTERISTICS (continued) Symbol hFE

.

Parameter DC Current Gain

Test Conditions Ic=-10~A

Ic = - 2 mA

Ic =-10mA

Ic =- 100 mA

Min.

Typ.

30 40

140 200 270

120 180 250

170 250 350

220 310 460

80 120 160

180 260 360

400 630

100 380 240 60

340 500 500

630 1000

Gr.VII Gr.vlll Gr.IX

125 175 250

200 260 330

250 350 500

Gr.X

350

520

700

VCE=-5V Gr.VII Gr.VIII Gr.IX VCE=-5V Gr.VII Gr.VIII Gr.IX VCE = - 1 V Gr.VII Gr.VIIi Gr.IX VCE=-1V Gr.vll Gr.VIII Gr.IX

Max.

Unit

40 45 60

For BCY78 Only Ic Ic Ic Ic hfe


====-

0.01 mA 2 mA 10 mA 100 mA

Ic =- 2 mA 1=1 kHz

lor BCY78

Gr.x VCE=-5V VCE=-5V VCE = - 1 V VCE=-1V VCE=-5V

Only


Ic =- 10 mA 1= 100 MHz

VCE = - 5 V

CEBO

Emitter-base CapaCitance

Ic = 0 1=1 MHz

VEB = - 0.5 V

CCBO


IE = 0 1=1 MHz

VCB=-10V

NF

Noise Figure

Ic =- 0.2 mA Rg = 2 kQ

VCE=-5V 1=1 kHz

hie

Input Impedance

Ic =- 2 mA 1=1 kHz

VC E=-5V

IT

180

MHz

11

15

pF

4.5

7

pF

2

6

dB

Gr.VII Gr.VIII Gr.IX

2.7 3.6 4.5

kQ kQ kQ

Gr.X

7.5

kQ

For BCY78 Only hre


Ic =- 2 mA 1=1 kHz

VcE =-5V Gr.VII Gr.VIII Gr.lX

For BCY78 Only Gr.x •

1.5xl0-' 2xl0-' 2xl0-' 3xl0-'

Pulsed: pulse duration = 300 lls. duly cycle = 1 %.

3/5

113

BCY78-BCY79 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter

Test Conditions

Output Admittance

hoe

Ie =- 2 mA f = 1 kHz

Min.

Typ.

Max.

Unit

Gr.VII Gr.VIII Gr.IX

18 24 30

30 50 60

j.!S j.!S j.!S

Gr.X

50

100

j.!S

VeE =-5V

For BCY78 Only Delay Time

td

Rise Time

tr

Storage Time

ts

•


Vee=-10V

Ie = - 10 mA 181 =- 1 mA Ie = - 100 mA 181 =-10mA

Turn-off Time

toff

Ie =- 10 mA 181 =- 1 mA Ie =- 100 mA 181 =- 10 mA

35

ns

5

ns

50

ns

50

ns

400

ns

250

ns

80

ns

200

ns

Vee=-10V

Vee=-10V

Ie =- 10 mA Vee =- 10 V 181 =-182 =-1 mA Ie =- 100 mA Vee=-10V 181 =-1 82 =-10 mA

Turn-on Time

ton

Vee=-10V

Ie =- 10 mA Vee =- 10 V 181 =-182 =-1 mA Ie =- 100 mA Vee =- 10 V 181 =-1 82 =-10 mA

Fall Time

tf

Ie =- 10 mA 181 =- 1 mA Ie =- 100 mA 181 =- 10 mA

Vee = - 10 V 85

150

ns

55

150

ns

480

800

ns

450

800

ns

Vee=-10V

Ie =- 10 mA Vee=-10V 181=-182=-1 mA Ie =- 100 mA Vee=-10V 181 =-182 =-10 mA

= 300 ~s, duty cycle = 1 %.


Base-emitter Saturation Voltage. G 185(\

)

-VSE Isat)r--,-,-,-TTT1rn--.--rr-rrrm----,----,;:.O-iT'''i'm' (v)

hFE =40 1,2

0 .•

hFE ::40

0.6

0.. 1---+-t+Htttl---+-+++t+Ht----+--t:.i-H'!fltl 0.4

0.6

1-++++l+IIF=t:=t=!--l+\-Il1---+++-I+1+Il

0.4

1---+-t+Htttl---+-+++t+Ht----+-Hf-tH-IH

0.2

1---+-t+Htt-H---+-+++t+Ht----+-Hf-tH-IH

0.2

-~ 10-'

4/5

114

10

10

BCV78-BCV79 DC Current Gain.


.,

.,

b-l-I,I VCE=-1V

4

600

601860

-

MkHztVCE ,,-5V

500

IBcv 78Y

400

,

I'-..

.,

79IX P"" ~ IX,Bey ...,..".

300 200

r-

BCV78VUI BCV 79 VIlI

r-

BCV"18VII,BCY79V1l

1111111 1111111 1111111

100

i'-

h,.

~ /"

h,.

Jj

;,;. I

10- 1

III

Noise Figure (f = 1 kHz). G 3175

Rg'~~~ii~~~~~~~~~1

(kfil'

I

,I IJ!!II I

I! . VCE=5V Rg = 2kll Ie = 200,uA

\

Ii-

,

1111111 1111111 1111111

11111111

.......

,./

Noise Figure vs. Frequency. NF (dBl

"

h;

I,'

"

10: ~

"'-I

Ii"

,11:

I N.' 'X """-.

5, '

~~I:~U '(I l~i"1\~',' 1dB-

6

•

,

2

I

1 10

102

10'

105

f(Hz)

5/5

115

BF257 B F258- B F259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits.

TO-39


c B

E


Value

Parameter

Unit

BF257 BF258 BF259 VCBO


160

250

300

V

VCEO

Collector-emitter Voltage (lB = 0)

160

250

300

V

VEBO


Ic

Collector Current

ICM


Ptot


T stg Ti October 1988

50°C

5

V

100

mA

200

mA

5

W

Storage Temperature

- 55 to 200


200

°C DC

0;

1/3

117

BF257-BF258-BF259 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

30 175


Parameter

VIBR) CBO

VIBR)CEO

.

VIBR) EBO

VCE Isat)

.

Min.

Typ.

Max.

Unit

50 50 50

nA nA nA

VCB=100V VCB =200 V VCB =250 V


Ic = 100 ~

for BF257 for BF258 for BF259

160 250 300

V V V


Ic = 10 mA


160 250 300

V V V

Emittter-base Breakdown Voltage (Ic = 0)

IE=100~A

5

V


Ic = 30 mA

IB = 6 mA

1

DC Current Gain

Ic = 30 mA

VCE=10V

fT


Ic=15mA

VCE =10 V

C re

Reverse Capacitance

Ic = 0 f = 1 MHz

VCE = 30 V

hFE

*

.

Test Conditions for BF257 for BF258 for BF259


ICBo


=

300 ps, duty cycle

=

V

25 90

MHz

3

pF

1 %.

DC Current Gain.

---+--+-+-+++H+---+--+-t-t-,---t1

0 .• ;-,

60

'~1'<"-5:' ..-t-I1-t-1H+!--1-H+-I-c----+i 60

04

1 r------ir----r--H---t-t-Ht----+--+-+-t+,'/-r; fi

veE _lOY 20

, 10

2/3

118

IC(mA)

10

..

klinA)

10'

BF257-BF258-BF259 Collector Cutoff Current.

50

25

Collector-base Capacitance .

100

75

125

..

T.('CI


10

veB

(V)

Power Rating Chart. RoO ,.....,-,--,-,--,,--,-r-r,--,-,--,,--,-,,-.!p!'j"-,

'1 ; CMHz)i-++-1-++-++-f-++-t-t-+' jCE=toV f-+-f--,f-++-1f-++-t-t-+-t I f= 20 ItoIiz

toOH+l-. r--t-ti" 50

t-T

+P""-=t-.

'

i-

(W)

f-++-f-+-f--,H-+-1-t-+-t-t-+-t-++-t-+-l

,j

-+'-c,f-++-t--l

f-+fH--+t--+-++y ...L~J t+ -+-'- H . '-i-fLt-+-1--:--+-++-f-++r-i'--I-H ,~ I

,

I

!

' +,+' f-++-f-++-1f-++-1-t10

20

i

30

~1Jt~ iIJ

'clmA)

o

~~~~LL~LL~LL~LL~~

o

40

80

Safe Operating Area.

10

1=~=r==t=If.:+#j:j.F--:.::"''''

__

I---~--~~t--l-+-~~'--I-++i-+t-1-

_ _ (BF257) 1Ie,0 ISO -::-::<~_I-+++-+t+HH IBF256) Ve•o 250V(BF2591 'ho JOIV(-----H-H 10

10'

Ye• IV)

10'

3/3

119

I I

I I I I I

I I I

I I I

I I

I I I I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I

I I

BF457 BF458-BF459 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF457, BF458 and BF459 are silicon planar epitaxial N PN transistors in Jedec TO-126 plastic package. They are particularly intended for use as video output stages in colour and black and white TV receivers, class A output stages and drivers for horizontal deflection circuits. These transistors have been studied in order to guarantee the maximum resistance against flash over.

TO-126


c B

E


Value

Parameter

Unit

BF 457 BF 458 BF 459 VCBO


160

250

300

V

VCEO


160

250

300

V

VEBO ICM

Emitter-base Voltage (Ic = 0) Collector Peak Current

IBM

Base Peak Current

Ptot

Total Power Dissipation at T amb T case

25°C S 25 'C

S

5

V

300

mA

50

mA

1.25 12.5

W W

T stg

Storage Temperature

- 55 to 150

°C

Tj


150

'C

January 1989

1/3

121

BF457-BF458-BF459 THERMAL DATA 10 100

Max Max



V(SR)CEO *

V(BR) EBO VCE

(sat) *

hFE *

*

Test Conditions


Icso


Min.

for SF 457 for SF 458 for SF 459

Vcs=100V Vcs = 200 V Vcs = 250 V

Ic=10mA

for SF 457 for SF 458 for SF 459

Emittter·base Breakdown Voltage (Ic = 0)

IE = 100 IlA

Collector·emitter Saturation Voltage

Ic =50 mA

Typ.

Max.

Unit

50 50 50

nA nA nA

160 250 300

V V V

5

V 1

IB = 10 mA

DC Current Gain

Ic = 30 mA

VcE =10V

fT


Ic = 30 mA

VCE=10V

90

MHz

C re

Reverse Capacitance

Ic = 0 f = 1 MHz

VCE =30 V

4

pF

C oe

Output Capacitance

Ic = 0 f = 1 MHz

VCE = 30 V

5

pF


=

300 fls, duty cycle

=

30

V

80

t %.

DC Current Gain,


VCE(sat)r-~,...,,--'rn"~-'---'''''-n-i-rn (v)

tOO

[

.,

f-VeE= 10 v

50

,/

V

~+to

2/3

122

I----~I----H-+Hj-++-~_+__++-t++-t-ij

BF457-BF458-BF459 Transition Frequency.

Output and Reverse Capacitance.

'T (MHz)

150

fOO

1 --

1 L+

10

20

30

3/3

123

BF657 BF658-BF659 MEDIUM POWER VIDEO AMPLIFIERS DESCRIPTION The BF657, BF658 and BF659 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for application with precision "IN-LINE" large screen CRT (thermal resis-tance ~ 20 ° C/W).

TO-39


c 6(}--+1::' NPN

E


Value

Parameter

Unit

BF657 BF658 BF659 Vcso

Collector· base Voltage (IE = 0)

160

250

300

VCEO


160

250

300

VEso


V V

5

V

Collector Current

100

mA

ICM


200

mA

Ptot

Total Power Dissipation at T case at T case

7 3

W W

Ic

OS; OS;

60°C 140°C

Tstg

Storage Temperature

- 55 to 200

°C

Tj


200

°C

January 1989

1/3

125

BF657-BF658-BF659 Collector Cutoff Current.

Collector-base and Reverse Capacitances . ... (...J,----,----,_._~~.,...-_._--,----r~r¥'i~ (V)

o.el---I--+-H-H-H+-·0.61---+--++-I+i+t1-----I-+-r-+++++I 0.4 1--+-I---l--.J-I.-I-J.l1----l-----+-+--l--~(.l.j

0.2 1--+--I---l--.J-I.-I-J.l1--+.AC+--l--i-+jf+j

6

25

50

75

100


•

10

,

(MHz)>-l--l-l-l-l-l--l-l.....l..W-l-1--k Ll.J ~--l--+-~--l--+-~--l--+-~~~E~DV I

G 1621,/1

Ie

'T

1...

(mAl

,"

Ie MAX (CONTINUOUS) ~

'~20 MHz .

e

Tease =60· C'

I I

!

i

10

VeEO "AX ~ 160V

~

BF658 VCEO MAX", 250 V -

BF659 VCEO MAX::: 3aOv

126

20

30

40

'e(mAl

10

II I! I!

II II

I BF651

H-

I

I

,

3/3

10 2

Safe Operating Areas. G-141J

10

..

lc{mAI

II

II

BF657-BF658-BF659 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

20 175

Max Max

ELECTRICAL CHARACTERISTICS (T case = 25 'C unless otherwise specified) Symbol ICBo

VIBRICBO

VIBRI CEO *

Min.

Typ.

Max.

Unit

50 50 50

nA nA nA


VCB=100V VCB =200 V VCB=250V


Ic = 100!lA


160 250 300

V V V

Collector-emittter Breakdown Voltage (IB = 0)

Ic=10mA


160 250 300

V V V

5

V

VIBRI EBO


IE = 100!lA

VCE Isatl *


Ic = 30 mA

1

IB = 6 mA

V

25

DC Current Gain

Ic = 30 mA

VCE =10V

fT


Ic=15mA

VCE=10V

90

MHz

C re

Reverse Capacitance

Ic = 0 f = 1 MHz

VCE =30 V

3

pF

hFE *

*

Test Conditions



=

300

~s,

duty cycle

=

1 %.


DC Current Gain. G 1623/1

)

80

./ 60

40

-

I

-

0·8 Ic~ .~

0.6

,.,

-

5 Ie

-I

1

---,-

.

~

0.4 VCE =10V

0.2

20

, , 10

Ie

.

(mA)

_.

•10

V

,

..

lc(mAJ

10 2

2/3

127

BFR17 LOW-LEVEL, LOW-NOISE, VERY HIGH GAIN AMPLIFIER DESCRIPTION The BFR17 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance low level, low noise amplifier applications.

TO-18


c

E


Value

Unit

VCES


60

V

VCEO


60

V

VEBO


Ic P tot T stg , TJ

Parameter

Collector Current Total Power Dissipation at T 8mb = 25°C at T case = 25°C Storage and Junction Temperature

November 1988

8

V

50

mA

0.36 1.2

W W

- 55 to 200

°C

1/3

129

BFR17 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

146 486


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.1 0.1

20 20

nA J.(A

0.1

20

nA


VCE=50V VCE=50V


VEB = 5 V


Ic=10mA

60

V

V(BR)CES


Ic=10J.(A

60

V

V(BR)EBO


IE=10J.(A

8

V

VCE(sa!)


Ic = 1 mA

IB =0.1 mA

0.15

0.35

V


Ic = 1 mA Ic=100J.(A

VCE = 5 V VCE = 5 V

0.64 0.58

0.7

V V

DC Current Gain

Ic=10J.(A Ic=100J.(A Ic =1 mA Ic =10 mA

VCE VCE VCE VCE

hIe


Ic =1 mA 1=20 kHz

VCE =5 V

IT


Ic =1 mA 1= 20 MHz

VCE =5 V

CCBO


IE = 0

VCB = 5 V

3.5

6

pF

CEBO


Ic = 0

VEB = 5 V

3.5

6

pF

Noise Figure

Ic=10J.(A Rg = 10 kQ 1=10Hzto10kHz 1=1 kHz 1=10kHz

1.8 1 1

4 3 3

dB dB dB

ICES lEBO V(BR)CEO

. .

VBE hFE

NF

.

.

hie

Input Impedance

hoe

Output Admittance

hr.


• Pulsed: pulse duration = 300IJ-S. duty cycle = 1%.

2/3

130

Ic =1 mA 1=1 kHz

Tamb = 150°C

=5 =5 =5 =5

V V V V

VCE =5 V

VCE =5 V

130 220 450

220 300 530 530 530

70

100

MHz

10

kQ

20

I1S

4.SX 10-4

BFR17 Noise Figure vs. Source Resistance.


G-2057

G 2056

CCaG

NF I VCE~5V {dS),----'

\ \

(pF )

'I

n

B=lS.7kHz

"-

\.

~'\ ~

t-- l- t--

~

f=1MHz

"

11 V

""'

-

30" .....

-'1

-.::::

= 10kHz.

Contours of Constant Noise Figure f

Contours of Constant Noise Figure f

RO

i

6

NF=ld8:,

~

\\.

-i--'-

-i-i I!-! dB

II

"

,

10- 1

i

VeE

I

I

\.

i

!

,0

il ' :

:i 5dB

4d'1--'-+-

6dS:

:

I

I

=5V

" _

II

,Wi-

3dS

. . . . N-4.l" ' ,'l1.lL--.8;! .1'- tJ. iii'

["'...:

f=TOkHz B = 2 kHz

. ,.

I

i

,

"1_[

Ii

N ~ I,

RO {kill

.p,

~

.1m,. ~illil] '1"i"tt1"

'0'

= 1kHz. G- 2062

G 2063

\.

;01-"

-H-ittT

'0

12

(kft)

,

lC=100PA

-

:---.. r-

,.

r

I--10- 1

~

,

=

VCE 5V f kHz B =20 OHz

=,

, ,

.

10

I

"'1i~D4 j'6dS i i '

--l

BdB

,

,

I, I

i

!

f-7'l--

I

, ,

.i i T 11lli, .,. '0'

IC{"Al

3/3

131

BFR18 HIGH-VOLTAGE, HIGH-CURRENT AMPLIFIER DESCRIPTION The BFR18 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. This device is designed for amplifier applications over a wide range of voltage and current.

TO-18


c B

E


Parameter

V CES

Collector-emitter Voltage (VBE

VCEO


VEBO Ic

P tot T stg , Tj


=0

)

= 0)

= 0)

Collector Current Total Power Dissipation at T amb :> 25°C at T case:> 25°C Storage and Junction Temperature

November 1988

Value

Unit

85

V

55

V

7

V

1

A

0.5 1.8

W W

- 55 to 200

°C 1/3

133

BFR18 THERMAL DATA 97 350

Max Max


ELECTRICAL CHARACTERISTICS(T amb = 25 'C unless otherwise specified) Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

0.2 0.2

10 10

nA j.lA

0.1

10

nA

ICES

Collector Cutoff Current (VSE = 0)

VcE =60V VCE = 60 V

IESO


VES = 5 V

Collector-emitter Breakdown Voltage (VSE = 0)

Ic = 100 j.lA

85

V


Ic =30 mA

55

V

V(SR) ESO


IE = 100 j.lA

7

V

VCE(sat)


Ic=150mA Ic = 500 mA Ic = 1 A

Is = 15 mA Is =50 mA Is = 0.1 A

0.13 0.3 0.65


Ic = 10 mA

VCE = 1 V

0.66


Ic = 150 mA Ic = 500 mA Ic = 1 A

Is=15mA Is =50 mA Is = 0.1 A

0.85 1.1 1.35

DC Current Gain

Ic=100j.lA Ic=10mA Ic=150mA Ic = 500 mA Ic = 150 mA Tamb =- 55°C

VCE VCE VCE VCE VCE

V(SR) CES V(SR) CEO

.

VBE

VSE(sat)

hFE

.

.

. .

T amb = 150°C

= = = = =

1 1 1 1 1

V V V V V

30 70 60 30

0.25 1

V V V V

1 1.6

75 120 90 45

V V V

180 180

15

hIe


Ic = 1 mA 1=1 kHz

VCE = 5 V

IT


Ic =50 mA 1= 20 MHz

VCE=10V

CESO


Ic = 0 1=1 MHz

VEs=0.5V

50

80

pF

Ccso


IE = 0 1=1 MHz

VCB =10V

12

20

pF

NF

Noise Figure

Ic = 30 j.lA Rg = 1 kQ

VCE=10V f = 1 kHz

2

8

dB

hie

Input Impedance

Ic = 1 mA 1=1 kHz

VCE= 5 V

hre


Ic = 1 mA 1=1 kHz

VCE = 5 V

hoe

Output Admitance

Ic = 1 mA 1=1 kHz


2/3

134

= 300~,

duty cycle

=

1%.

VCE = 5 V

120 60

MHz

90

kQ

2.2 2.4x1

cf

8.5

4

/lS

BFR18 Collector-emitter Saturation Voltage. VCE(sat) (V)

. ~\cC;i~wt,

J

r-

'I

II I

:~

-55-C

,-

H

10-1

II !W I;

Ulli'Iii::::: l !( -

-

II

"-

~

4-

;~ 25.C

I --

I

~I

1-,)

~ _~ I

II'

I

-

I

'1

III'..

Ie-

,

125-C 'I ______ !

-

iii: , , ..

i j

___

LI

-

,

,

l ~+~I

, r-

Base-emitter Saturation Voltage. G-3113

, ,Ii

, ,

..ill

10 2

10

.. !

, ,

'(mA)


High Frequency Current Gain. G 3115

(CBO (pF)

! I,

i I VeE 10V

IE = 0

----c.

=

,/

t =20MHz

40

I

L I

30

20

1\

/'

/

\

V

,,~ 10

I

, 10

20

30

40

Ves (\J)

,

8

10

.

6 8 Ie (mA)

3/3

135

BFR36 CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR DESCRIPTION The BFR36 is a multi-emitter silicon planar epitaxial N PN transistor in Jedec TO-39 metal case. It is designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860M Hz). The device features very good intermodulation properties, very low reverse capacitance, high power gain and high power dissipation.

TO-39


c B

E


Value

Unit

= 0) Collector-Emitter Voltage (IB = 0) Emitter-base Voltage (Ie = 0)

40

V

30

V

3

V

Collector Current

200

mA

ICM


400

mA

Ptot

Total Power Dissipation at T amb " 40 DC at T case" 50 DC

0.8 5

W W

- 55 to 200

DC

VCBO VCEO VEBO Ie

T stg , Ti

Parameter Collector-base Voltage (I E


November 1988

1/5

137


30 200

Max Max


Parameter

ICBO V(SR)CBO VCEO(sus)

.

V(SR)ESO

..

Test Conditions

Min.

Typ.

Max.

Unit

150 20

J.!A


Vcs=20V VCB =20 V


Ic = 100 j.lA

40

V

Collector-emitter Sustaining Voltage (IB = 0)

Ic = 10 mA

30

V


IE = 100

3

V

Tamb = 150°C

J.!A

750

mV

Collector-emitter Knee Voltage

Ic = 100 mA

VBE


Ic = 70 mA

VCE = 5 V

hFE

DC Current Gain

Ic = 70 mA Ic=150mA Ic = 70 mA Ic = 150 mA

VCE = 5 V VCE = 5 V VCE=15V VCE=15V

60 60 65 65

130


VCE=15V

1=100MHz Ic = 70 mA Ic = 150 mA

1

1.4 1.2

GHz GHz

7

pF

VCEK

.

IT

700

nA

CESO


Ic = 0 1=1 MHz

VES = 0.4 V

CCBO


IE = 0 1=1 MHz

Vcs = 15 V

C re

Reverse Capacitance

Ic = 0 1=1 MHz

VCE = 15 V

NF

Noise Figure

VCE=15V 1=200 MHz

Rg = 50 Q

G pe

Po

(1)

Power Gain (see test circuit)

Ic = 70 mA

Output Power (see test circuit)

Ic =70 mA

• Pulsed: pulse duration = 300~s, duty cycle = 1%. • • 19 = Value corresponding to Ie = 11 OmA and VeE = 1V. (1) Output VSMR < 2, d;m = - 30dB@ f = 2 (fq - fp), fp = 798MHz and fq

2/5

138

mV

750

1.7

3

pF

2.2

pF

Ic =30 mA Ic = 70 mA

4 4.5

dB dB

VCE =18V 1= 200 MHz 1= 500 MHz 1= 800 MHz

16 9.5 6.5

dB dB dB

150 90

mW mW

VCE = 18 V f = 200 MHz 1=800 MHz

= 802M Hz.

130 70

BFR36 TEST CIRCUIT RF amplifier circuit for power gain test (f

= 200M Hz).

3';'15pF

Rg = 50n

3.;-15 pF

Power Gain vs. Collector Current.

High Frequency Current Gain vs. Collector Current. G 3355

G-335fi

Po

ht.

(dB) VCE =15V

_.

16

. /V

./' 15

--

"-\

14

14

=200 MHz 12

13

2

10

'10 2

'C(mA)

. -

16

VCE =1811

f

.

f =100MHz

/'

V

~

'\

10 10

10 2

Ie (rnA)

3/5

139

BFR36 Reverse Capitance.

Power Rating Chart. G-3358

G lJ57n

c,.

Plot (W)

(pF )

""- i'--~

Ie :0 f=lMHz

- c-- t--

-

\~

'\:, ~;':

~

10

Input Impedance 511e (normalized 50n).

~ \.,

i

r-

~

~

--

.

r-

..-

o-

- -F~E

40

--~ ---

- I - t--

AI

r--

,20

80

~

'60

Forward Transfer Coefficient 521e. 90'

-, Reverse Transfer Coefficient 512e.

-90'

4/5

140

-90"

Output Impedance 522e (normalized 50n).

-,

BFR36 TYPICAL APPLICATIONS CATV-extender line amplifier.

• "V. II

Ikn 200n

15n (}----

Hi"-

tfS

0;6.1=

410

n

1kfij

I

son

!knL

!~~F1 ".":

'--I--'

"

BFR36

I

r..?

"

(~

W

T

1\

4700

j

n

6Bn

r

'~~ 1~,":: I(

~~

BFR36

470n

RT

.1-

6FR36-

t'V'

470n

P.G.;;: 2SdB

dt,.t2=- 61dB

f1=159MHz

dfl-f2 = - 66dB

f2= 57MHz

15n

_~~

·Jio- ~

, ,.?'

~~BFR36 nF

I

l GBn

,on

20ft

~6B .,...n

Second ord~r distortion at YOUT" .4GdBmV

BW-3dB =1O.3SOMH:z:

-.Fl

210n

~

I

non .---= lOnF

I'

r"~: '-n

I IE

( lkfi

~-

JM

lOn

>-6B.b?nF

tkO

n

lOnF 5 -J029

MATV-200MHz channel amplifier.

BFR 38

BFR 38

BFY 90

BFR 36

10pF

3.3

kn

_ _---J.rrv---
Supply Voltage -2411

\/·5.W.R..1N

Cune'fl!. Drd'"

lOO",A.

f?G.

7Od8

V.SWROUT 120mWat

NF

3dB

Pour

Gar. COntrol

drn

-lOdB

~30dB

5/5

141

BFR99

DESCRIPTION The BFR99 is a silicon planar epitaxial PNP transistor in Jedec TO-72 metal case, particularly designed for wide band common-emitter linear amplifier applications up to 1GHz. It features high fT, low reverse capacitance, good cross-modulation properties and low noise.

TO-72


ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic Ptot Tstg , T j October 1988

Parameter

Value

Unit


- 25

V

- 25

V

-3

V

Collector Current

- 50

mA

Total Power Dissipation at Tamb ~ 25°C at T case ~ 25°C

225 360

mW mW

- 55 to 200

°C



1/2

143


Max Max

486 777


Parameter

Test Conditions

Typ.

Max.

Unit

- 100

nA

VCB=-15V

V(BR)CBO

Collector-base Breakdowm Voltage (IE = 0)

Ic=-100~

- 25

V

VCEO(sus) *


Ic =- 5 mA

- 25

V


IE=-10~

-3

V

VBE


Ic=-10mA

VCE=-10V

- 0.75

hFE *

DC Current Gain

Ic =- 1 mA Ic=-10mA Ic =- 20 mA

VCE=-10V VCE=-10V VcE =-10V

75 80

V(BR)EBO

25 20

V

h


Ic=-10mA f = 200 MHz

VCE=-15V

2

GHz

C re

Reverse Capacitance

Ic = 0 f = 1 MHz

V cE =-15V

0.4

pF

NF

Noise Figure

Ic =- 3 mA Rg = 50 Q

VCE=-15V

Ic=-10mA Rg = 50 Q

*

Min.


ICBo


2/2

144

= 300(.15, duty cycle = 1%.

f = 200 MHz f = 800 MHz VcE =-15V

2.5 3.5

f = 200 MHz f = 800 MHz

3

4

5

dB dB

dB dB

BFR99A WIDE BAND VHF/UHF AMPLIFIER • SILICON PLANAR EPITAXAL TRANSISTOR • TO-72 METAL CASE • VERY LOW NOISE

APPLICATIONS: • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS

DESCRIPTION The BRF99A is a silicon planar epitaxial PNP transistor produced using interdigitated base emitter geometry. It is particulary designed for use in wide band common-emitter linear amplifiers up to 1GHz. It features very high fr, low reverse capacitance, excelient cross modulation properties and very low noise performance. The BFR99A is complementary to the BFY90. Typical applications include telecommunication and radio communication equipment.

TO-72


:~: ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO V EBO Ic Ptot T stg , T j

Parameter

Value

Unit


- 25

V

- 25

V

-3

V

Collector Current

- 50

mA

Total Power Dissipation at T amb ::; 25 DC at T case::; 25 DC

225 360

mW mW

- 55 to 200

DC



December 1988

1/5

145

BFR99A THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

486 777

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBO V(SR) cso

Parameter

Test Conditions


Vcs=-15V


Ic = - 100

Collector-emitter Sustaining Voltage (Is = 0)

!lA

Min.

Typ.

Max.

Unit

- 100

nA

- 25

V

Ic = - 5 mA

- 25

V


IE=-10flA

-3

V


Ic =- 20 mA

VSE


Ic=-10mA

hFE

DC Current Gain

Ic =- 1 mA Ic=-10mA Ic =- 20 mA

VCEO

(sus)'

V(SR) ESO VCEK

..

.

- 0.8

V

VCE=-10V

- 0.75

V

VCE=-10V VCE=-10V VCE=-10V

25 20

75 80

1.4

IT


Ic=-10mA f=100MHz

VCE=-15V

C re

Reverse Capacitance

Ic = 0 1=1 MHz

VCE=-15V

NF

Noise Figure

Ic =- 3 mA

VCE=-15V

2.3

GHz

0.4

pF

Rg = 50 Q

Ic =- 10 mA Rg = 50 Q

G pe Po IS21 el 2

f = 200 MHz 1= 800 MHz VCE=-15V

2.5 3.5

f = 200 MHz f = 800 MHz

3 4

dB dB

Ic =- 10 mA f = 800 MHz

VCE=-15V

10

dB

Output Power

Ic =- 10 mA f = 800 MHz

VCE=-15V

14

mW

Ic=-10mA

VCE=-15V

8

dB

Transcuder Power Gain

• Pulsed: pulse duration = 300;1S, duty cycle = 1% • • 16 = value corresponding to Ie = - 22m A and VeE

146 .

dB dB

Power Gain

Rg = RL = 50 Q 1= 800 MHz

2/5

4 5

= -

tv.

BFR99A Transition Frequency.

'T ,I_ _ r--- r---t-

,

(GHz)

Reverse Capacitance.

IT

t

I

vCE' -15~

,

,

--t-

::::b:(..

VCE=-S

f=1MHz

r---

;;;..-

I ~

-

G 3372

C,.,

(pF)

~t-t.

,

,

'++

-~-t-+I

,

i""-

,

I

,

I I

I

I

'~

[

I

i

.........

!

~

[

.......

I

t--1

-_,

10

Noise Figure vs. Collector Current.


NF~__-.--,-,_,,-rno----,__,G~-~3~3n (dB)

10

-le(mA)

f------+--+-+-t-t-+t-tt------t--1--H,

NF'--'-'-rTTTIT'--'--~"Tn~~

(dB) f---1--H-+t-tttt-----t--+---t-~H_hI_--

--

f-----t------i"g'50JlI++++-----f-----++-1

--+ 1

__

8 r---

~ 8~~~~z

____ ' __

I[

,

.

II [/

11

,

,

-IC CmA)

10

Noise Figure vs. Ambient Temperature.

,.

10

4

6

8

7

f(MHz

10'

Transducer Power Gain. G-Jl76J1

G-JJ7511

15 21.1'

VCE' -15~--f-

25

~4

r---

------,--

0.8 f----,.-,.-,

'~"------~~-.---~

20

------'-~~---:-:--:----=

15

f---..

Ic=-lOmA-t--

f-

'

-n4f--~I----'---+-7------~~4-----~

f------!----7--+--+-+----:-~- -,----i--

10

+

_.-

-~B

-1.2

-so

I

I

--'----T-~ ! i ! i , i-i

I

[

I

so

i-----Li

I

!

TambC-C)

10"'

,

.

, t(GHz)

3/5

147

BFR99A Input Impedance 811e (50n normalized).


G-1878

!lBO" 1--+-+-+-+-f-l-!~-f"-----1"---l'''-l

-100"

-90"

Reverse Transfer Coefficient 812e.

Output Impedance 822e (50n normalized). 100"

-90'

Wide Band MATV Amplifier.

BW=40 +860 MHz G = 16dB NF< 5dB

4/5

148

o·

1lS.W.R.IN < 2 y'S.WR.OUT < 2 YOUT =100mY for l·/.Crossmodulation

G-I880

BFR99A MATV Channel Amplifier.

I'''''

fo 0600 MHz s loOdD \'SWR.IN
G

Pcur

~!5mWDdimo30dB

'l~YrIRovr<15

5/5

149

BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and band-aerial amplifiers with high output power from 40 to 860 MHz. Another possible application is as the final stage of the wide band vertical amplifier in high speed oscilloscopes.

TO-39


c

E


Value

Unit

VCBO


40

V

VCER


40

V

VCEO


25

V

VEBO


3

V

Collector Current

t50

mA

ICM


300

mA

Ptot

Total Power Dissipation at T ambO; 25°C at T case " 125°C

0.7 t.5

W W

- 65 to 200

°C

Ic

T stg , T j

Parameter


December 1988

1/4

151

BFW16A-BFW17A THERMAL DATA Max Max



Parameter

ICBO


VCB=20V

V(BR)EBO


IE = 100 IlA


Ic = 100 mA

DC Current Gain

Ic = 50 mA Ic = 150 mA

VCE = 5 V VCE = 5 V


Ic = 150 mA 1=500 MHz

VCE=15V

.

VCEK*/**

hFE

IT

Test Conditions

Min.

IE = 0 f = 1 MHz

VCB=15V

C re

Reverse Capacitance

Ic = 10 mA f = 1 MHz

VCE =15V

NF

Noise Fig u re (for BFW 16A only)

Ic = 30 mA Rg = 75 Q

VCE=15V f = 200 MHz

G pe

Power Gain (not neutralized)

Ic = 70 mA VCE=18V f = 200 MHz for BFW 16A and BFW 17A 1=800 MHz For BFW 16A only

Output Power

Ic = 70 mA Channel g( 1)

152

V V

25 25

1.2 1.1

GHz GHz

1.7

pF pF

6

dB

16

dB

6,5

dB

130

150 150

mW mW

70

gO

mW

VCE=18V

Channel 62(2) For BFW 16A only

2/4

f.lA

4

for BFW 16A for BFW 17A

• Pulsed: pulse duration = 300 Jls, duty cycle = 1 %, •• 18 = value lor which Ie = 110 rnA at VeE = 1V, (1) Ip = 202 MHz, Iq = 205 MHz, 1(2q _ pi = 208 MHz. (2) Ip = 798 MHz, Iq = 802 MHz, 1(2q _ pi = 806 MHz.

Unit

20

0.75


Po

Max.

3

lor BFW 16A lor BFW 17A CCBO

Typ.

T amb = 150 'C

BFW16A-BFW17A TEST CIRCUIT Test Circuit for Power Gain and Output Power Measurements (f = 200 MHz). 3';'15pF

3-:-15 pF

High Frequency Current Gain.

Reverse Capacitance.

-

G 3356

G-335'I1

Cr. ("")

3~1""

-"CE=15Y , =100MHz

16

14

12

/

V

..

...... c----

-

2

r----

IC=-O f=1MHz

-+--+--H

-+-+-++-f"Io.t:t~r- -

~

10

•

8

10

10

Input Impedance Slle (normalized 50 Q).

Forward Transfer Coefficient S21e. 90'

G-JJ69

18cfl-+--+----1-+----f'--'--t"---t"----1L...-t"'---to·

-90'

-1

~ 5G5-ntOMSON 6..,,1 IiIilUICl'II@IlILI!1C'IJ'Ii@OOUlCiI

3/4

153

BFW16A-BFW17A Reverse Transfer Coefficient S12e. 90'

Output Impedance S22e (normalized 50 0). G-3370

.,

4/4

154

BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 (BFW43) and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In particular, theyfeature a VCEOof 150 Vand are specified over a wide range of currents.

TO-39

TO-18


s-

6896


Unit

VCBO

Collector-Base Voltage (IE = 0)

-150

V

VCEO

Collector-Emitter Voltage (IB = 0)

-150

V

VEBO

Emitter-Base Voltage (Ic = 0)

Symbol

Ic Ptot

T stg , T j October 1988

Parameter

Collector Current Total Power Dissipation at T amb ::; 25°C for BFW 43 for BFW 44 at T case ::; 25°C for BFW 43 for BFW 44 Storage and Junction Temperature

-6

V

-100

mA

0.4 0.7

W W

1.4 2.5

W W

- 55 to 200

°C 113

155

BFW43-BFW44 THERMAL DATA BFW43 Thermal Resistance Junction-case

Max

125

°C/W

70

°C/W

Rth j-amb

Thermal Resistance Junction-ambient

Max

438

°C/W

250

°C/W

Typ_

Max_

Unit

- 0.2 - 0.03

-10 -10

IlA

ELECTRICAL CHARACTERISITCS(T amb Symbol

Parameter

ICBo


= 25 ac unless otherwise specified) Min_

Test Conditions VCB=-100V VCB=-100V

Tamb = 125°C

nA


Ic=-101lA

-150

V


Ic=-2mA

- 150

V

V(BR)EBD


IE=-101lA

-6

V

VCE(sat)


Ic =-10 mA


Ic =- 10 mA

le=-1mA

DC Current Gain

Ic =-1 mA Ic =-10 mA Ic =-10 IlA Tamb =- 55°C



VCE=-10V

f = 20 MHz Ic =-1 mA Ic=-10mA

V(BR)CBO

V(BR)CED

.

VeE (sat) hFE

.

. .

IT CEeD CceD •

BFW44

Rth j-case

Emitter-base Capacitance Collector-base Capacitance

- 0.1

le=-1mA

40 40

- 0.5

V

- 0.74 - 0.9

V

85 100 30

Ic =0 f = 1 MHz

VEe =- 0.5 V

IE =0 f = 1 MHz

Vce =- 5 V

50

MHz MHz

60

pF 20

25

5

7

pF

= 1 %.

Pulsed: pulse duration = 300 Ils, duty cycle

DC Current Gain.

Collector-emitter Saturation Voltage. Go 3137

6-3059

120 100

80

-VCE(sat)

111111111 111111111 111111111

I

Tamb =125:s,.

I

I

ml

""

Ii!t"

1

f"""

-IC=-101 8

0.2

!

-55".Joo 1

I'

0.1

1

,.......... -

0.05

VCE =-10V 20

1111111II

-

10 -Ie (mA)

~ . .."

SGS-THOMSON

~DC~~I!i:'II'II@llIDC$

lamb = -5';;

rt -~

1,

II,

J \1111111

156

J /J

0.15

,..".

,iq

2/3

,

I

25"C

1111 60

II

(V)

..

-

/

12S-

, 1

:/

25"

..

10

, 6. -Ie

(mA)

BFW43-BFW44 Base-emitter Saturation Voltage.

Transition Frequency. G 3138

-VBE(sat)

/I

(VI

Tamb~ 0.8

._-

;;;;00'"1--""

V

0.6 ~

0.4

~

0.2

I--

25-C

125-C

:.t

I-60

l .. -]lllIll.. Jtn',.

, ,

/

I

ij

I

-I C"·101 8

!

40

r-~)' 20

V

, ,

, ,

10

__ I

I

I I

-t-

~

80

V V

'J

(MHz)

41

...... ~

C.3139/1

'T

..... ""

-Ie (mA)

H..

, , 10·'

j

i I

, I,

VCE =-IOV f =20MHz

..

10

+..

, ,

-IC(mA)

3/3

157

BFX37 LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTION The BFX37 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for use in high performance, low-noise amplifiers over a wide frequency range. It features high current gain over the range from 1 ~A to 100 mA and excellent NF at low frequency.

TO-18



Unit

VCES


- 90

V

VCEO


- 80

V

VEBO


-6

V

- 100

mA

0.36 1.2

W W

- 55 to 200

'C

Symbol

Ie Ptot T stg , T j

Parameter

Collector Current Total Power Dissipation at T amb oS 25°C at T case oS 25°C Storage and Junction Temperature

November 1988

1/4

159

BFX37 THERMAL DATA Max Max


146 486

ELECTRICAL CHARACTERISTICS(T amb = 25 'C unless otherwise specified) Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

- 0.1 - 0.1

-10 - 10

IlA

- 0.1

- 10

nA


VCE =-70 V VCE =-70 V


VEB =-4 V


Ic=-1011A

- 90

V


Ic =- 5 mA

- 80

V

V(BR)EBO


IE =-1011A

-6

V

VCE(s.!)


Ic = - 10 mA Ic =- 50 mA

IB =- 0.5 mA IB =- 5 mA

- 0.1 - 0.15


Ic=- 1 mA

VCE=-5V

- 0.65


Ic=-10mA Ic =-50 mA

IB =- 0.5 mA IB =- 5 mA

- 0.73 - 0.82

DC Current Gain

Ic =- 11lA Ic =-1011A Ic=-10011A Ic =- 1 mA Ic=-10mA

VCE=-5V V cE =-5V VCE=-5V VCE=-5V VCE=-5V

ICEs lEBo V(BR)CES V(BR)CEO

VBE VBE(s.t) hFE

.

.

. .

T .mb = 150°C

70 125 125 125

130 170 200 220 200

- 0.25 - 0.4

nA

V V V

- 0.9 - 0.95

V V

230 280

hIe



VCE=-5V

fT


Ic =- 0.5 mA f = 20 MHz

VCE=-5V

CEBO


Ic = 0 f = 1 MHz

VEB =- 0.5 V

12

15

pF

CCBO


IE = 0 f = 1 MHz

Vcs =- 5 V

4.5

6

pF

Noise Figure

Ic =- 20 IlA VCE = 5 V Rg =10kQ f = 1 kHz f = 10 to 10000 Hz

0.8 1

2.5 3.5

dB dB

NF

160

40

Input Impedance

Ic=-1mA f = 1 kHz

VCE=-5V

6.5

hre


Ic=-1mA f = 1 kHz

V cE =-5V

2.5x10- 4

hoe

Output Admittance

Ic=-1mA f = 1 kHz

VCE=-5V

15

= 300 flS. duty cycle = 1 'Yo.

~ SIiS·1HOMSON At.., I fiIiilHa::lII@l
MHz

70

hie


2/4

250

kQ

IlS

BFX37 DC Current Gain.

Collector-emitter Saturation Voltage. G 3181,

-veE{sal )

~J -+1

~~l c e

-

(V)

-l =-101

!

-

0.2

-

0.15

0.1

j

I

0.05

!

I

--1-

L

t ;--1

I

'l'/

lamb =125°(

,-I

,'/

~

2

I

-55·C

,,

,

2

,,

(CBO

j

,--t-

I

1---.

'E ::: 0 1

"' "'I I

/..

'.

t-=--- - r---- 7'

=-5V f::: 1kHz

hj/

./

ht.

.

'r--"

I

I

,,

I

, ,,

2

10-1

, ,,

2

10

--

I

tT (1101Hz)

I

f+

-

r--

IV

V

(, 31S8

10-'

I

(dB)

--

!

I

I~

I

Ij--

I

i

,

VCE =-5V f -ZOMHz

I

I, i

I

(rnA)

,

/

,j..

I,

-Ie

10

VeE =-5V B=1S.7kHz

-

120

Vi

~

, ,

10-2

NF I

I

I--- ~ ,

~

r-- -

Noise Figure vs. Source Resistance. C. 31711

--

, .

-VeB (V)


t- "

11

hi.

,

, ,

1=1"

h~e

"' I"'--.

'-r I

(rnA)

I

f'-....

40

"

-Ie

10 .~

.-

I

BO

2

I

(,3186/1

" VeE

12

'60

'

,

10

t=c-.."

,

1

2

It



-

'I

-mt

2S·Cr

Ii,

I

'

10- 1

1

I

I

!

i

I

(pF)

--

t---

_.t-

I, , , 10

II

II,

I

i

6 ,

-Ie (mA)

i'-.. ,"' "'

,/

........

,co-1~"

"-

-2~

~

I 6

-10~A

,

8

10

8

Rg (kfi)

3/4

161

BFX37 Contours of Constant Noise Figure (f = 100 Hz).

Countours of Constant Noise Figure (f = 1 kHz).

Contours of Constant Noise Figure (f = 10kHz).


-

~

I

:\

-

III

10,1 10-3

4/4

162

-Ie

(rnA)

10-5

1O~

10-3

10- 2

10-1

,

f(MHz)

BFX38/BFX39 BFX40/BFX41 HIGH VOLTAGE, GENERAL PURPOSE TYPES DESCRIPTION The BFX38, BFX39, BFX40 and BFX41 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case, designed for a wide variety of applications. They are particulary useful as complementary drivers (BFY56A is a good complement) in output and switching applications where high voltage and high current are required.

TO-39


:~: s-

6896


Parameter

= 0) = 0)

Vcso


VCEO


VESO

Emitter-base Voltage (Ie

Ic Ptot T stg , Tj

= 0)

BFX40 BFX41

Unit

- 55

- 75

V

- 55

- 75

V

BFX38 BFX39

-5

V

Collector Current

- 1

A

Total Power Dissipation at T amb ,; 25 DC at T case'; 25 DC

0.8 4

W

- 55 to 200

DC


November 1988

1/4

163

BFX38·BFX39·BFX40·BFX41 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

44 219

Max Max


Parameter


Icso

V(SR)CSO

V(SR)CEO

.

Test Conditions

Min.

for BFX38 - BFX39 Vcs=-40V Tamb = 125°C Vcs=-40V for BFX40 - BFX41 Vcs=-50V Vcs =- 50 V Tamb = 125°C

Typ.

Max.

Unit

- 0.2 - 0.25

- 50 - 50

nA ~

- 0.2 - 0.25

- 50 - 50

nA ~


Ic=-10~

for BFX38 - BFX39 for BFX40 - BFX41

- 55 -75

V V


Ic=-10mA for BFX38 - BFX39 for BFX40 - BFX41

- 55 -75

V V

-5

V

V(SR)EBO


IE=-10~

VCE(sat)


Ie =- 150 mA Ie =- 500 mA

Is =-15 mA Is =- 50 mA

- 0.12 - 0.3

- 0.15 - 0.5

V V


Ic=-150mA Ic =- 500 mA

Is=-15mA IB=-50mA

- 0.8 - 0.9

- 0.9 -1.1

V V

DC Current Gain

for BFX38 - BFX40 VCE=-5V Ic=-100~ Ic =-100 mA VCE =- 5 V Ic =- 500 mA VCE=-5V for BFX39 - BFX41 Ic=-100~ VCE=-5V Ic =- 100 mA VCE=-5V Ic =- 500 mA VCE=-5V

. .

VSE (sat) hFE

hFE

.

.

DC Current Gain

Ic =-1 A

VCE=-5V for BFX38 for BFX39 for BFX40 for BFX41 VCE =- 5 V

Ic =- 100 mA Tamb =- 55°C for BFX38 - BFX40 for BFX39 - BFX41

60 85 60

90 130 120

30 40 25

45 70 65

30 15 25 10

30 15


Ic =- 50 mA VCE=-10V

f = 100 MHz

CESO


Ic =0 f = 1 MHz

VEB =- 0.5 V

75

120

pF

CCBO


IE = 0 f = 1 MHz

VCB =- 0.5 V

15

20

pF

ton

Turn-on Time

Ic =- 500 mA IBt =- 50 mA

Vcc =- 30 V

33

100

ns

fT

..

• Pulsed; pulse duration = 300 ~, duty cycle = 1 %. ** See test circuit.

2/4

164

~ ...."

SGS·ntOMSON ~D©lOO!IiI!.lO©'ii'lRI@IllD~

100

150

MHz

BFX38-BFX39-BFX40-BFX41 ELECTRICAL CHARACTERISTICS (continued) Symbol

Typ.

Max.

Unit

t .. •

Storage Time

Parameter

Ie =- 500 mA Vee =- 30 V IB1 = IB2 = - 50 mA

Test Conditions

160

350

ns

tf"

Fall Time

Ie =- 500 mA Vee =- 30 V IB1 =-I B2 =- 50 mA

27

50

ns

DC Current Gain (for BFX38 and BFX40 only).

Min.

DC Current Gain (for BFX39 and BFX41 only). G_3194

Go 3193

I!i Tamb:12~'CI"'" 1 1;1 i ill II!['.' '; iii I I \ - ~t I i II 25'C It~

hFE -tlllli!~

I

160

120

, _~l

'

80

,,"""1-:1

.a r-

_1

1

I I"

I'

'......

fo""'"'"1

'

lJ

160

,I JVCE =-5V,' II III 1111' II

i

80

~

111

'T._125'C ...... II' ,

JU NJ ffrs·k' ,~~ :" llill i

I-Ht+

I

"

I

I I III 468

10-'

I

!

!ii_ 55,

f-

~H+

40

Illil


i,

I

I-

1

I--

10

2

1

rm ! :i

Ii:, I " 11II II '

468

2

468

2

1

I

I

,

I

[I!

468

10 2 -lC(mA)

10

Base-emitter Saturation Voltage. G-3195

I

(V)

I Ill~.

r-:!,, I

[I

I lilli'

I

, II

I

II j

:

120

f-H m

,.

I III !, I

!I.! !I.".VCE =-5V,II ,I 1,',! I ' ::j I I I i I ~i il- -+++tIt1l--+I-H-+t4~-

! I ' 'I

,]I

,11,1 -55'C:,

--L'II

-VCE(sat )

~ !

,I:

CJtttt Tl-ilrn I,!! . II ilil -

hFl)J I 111I 111111111 ,II '

-

,

G 3 96

-YBEfsat) (V)

-IC=-1018 0.8

1.2

Tamb=-SS·s.-

0.6

25-C

0,8

Q4

0.6

lamb = 125.~-=:2 25-C

....t;~

0.2

Q4

~ ?;".c 4

10

•• 10'

I

::::::.

125"<:

1

f-"

!

:=::..t-1 !

-I C,"·101 8

0.2

4

I

,

••

-Ie (rnA)

--

.,.

10

4

, ,

,

4

.,

-Ie (mA)

3/4

165

BFX38-BFX39-BFX40-BFX41 Transition Frequency.

Collector-base Capacitance. 6319711

(pFl

'50

.........

/

,20

-

V

G 3198

-

tcBl'

'T (MHz)

,

--

.-

r--

-!-

i'l. ,

10

II

,

I

80 , I .'

"

40

/

t =100 MHz VeE =_10V

,

II , II

V 4

,

..

4

10

••

4

10'

'II

...

••

~IC(mA)

I ~

I

S'

Test Circuit for ton, ts, and t,.

Vaa=+4.1V

-lOU

VIN

VC C =-30V

...----..JVOUT

l~O.AJ~ 6211

s- 4617 PULSE GENERATOR:

TO OSCILLOSCOPE:

t,. b < 20 ns

t,= 10 ns

PW= 10J.lS

Z'N> 100 KO

Z'N=500 DC<2%

4/4

166

! ! , ;

II

IE =0

II 2

10

. ,!!

III liii 4'

8

-VeB (V)

BFX48 HIGH-FREQUENCY AMPLIFIER DESCRIPTION The BFX48 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers.

TO-18


:~: ABSOLUTE MAXIMUM RATINGS Symbol

Value

Unit

VC80


- 30

V

VCEO


- 30

V

VE80


-5

V

- 100

mA

0.36 1

W W

- 65 to 200

°C

Ic Ptot T stg , Tj

Parameter

Collector Current Total Power Dissipation at T amb ,; 25°C at T case ,; 25°C Storage and Junction Temperature

November 1988

1/3

167

BFX48 THERMAL DATA 175 486

Max Max



Parameter

Min.

Test Conditions

Typ.

Max.

Unit

- 15 -15

nA IlA

Collector Cutoll Current (VBE = 0)

VCE=-20V VCE =- 20 V

V(BR)CBO


Ic =- 1O IlA

- 30

V

V(BR)CEO *


Ic = - 10 mA

- 30

V

V(BR)EBO


IE =-101lA

-5

V

VCE(sat) *


Ic=-1mA Ic=-10mA Ie =- 50 mA

IB = - 0.1 mA IB =- 1 mA IB =- 5 mA

- 0.1

- 0.13 - 0.14 - 0.3

V V V


Ie =- 1 mA le=-10mA Ie =- 50 mA

IB =-0.1 mA IB =- 1 mA IB=-5mA

- 0.77

- 0.75 - 0.9 -1.1

V V V

DC Current Gain

le=-101lA Ic =-100IlA Ic =- 10 mA Ic =- 50 mA Ic=-10mA Tamb = - 55°C

VCE VCE VCE VCE VCE


Ic=-10mA 1= 100 MHz

VcE =-20V

CEBO


Ic = 0 1=1 MHz

VEB = - 0.5 V

4

5.5

pF

CCBO


IE = 0 1=1 MHz

VCB=-10V

2.2

3.5

pF

Noise Figure

Ic =- 1 mA 1= 100 MHz

VCE=-5V Rg = 100 Q

3.5

6

dB

ton

Turn-on Time

Ic =- 50 mA

IB1 =-5 mA

20

50

ns

totl

Turn-off Time

Ic =- 50 mA IB1 =- IB2 =- 5 mA

95

160

ns

Feedback Time Constant

Ic=-10mA 1=80MHz

40

ps

ICES

VBE(sat) *

hFE *

IT

NF

rbb'Cb'c

• Pulsed: pulse duration = 300 1lS, duty cycle = 1 %.

2/3

168

T amb = 125°C

=====-

1 1 1 1 1

V V V V V

40 70 90 20

80 130 160 40

30

VCE=-20V

400

MHz

550

BFX48 Collector-emitter Saturation Voltage.

Base-emitter Saturation Voltage. -VBE(sat) .......,TTTTTrrr~-,-TTImr-.,.,-Ti-TiiTI

(v)

hFE =10

1.2

Tamb"'-SS-C

O.

f--- -

~

I-- . f-

12S-C

O.S

0.,

0.2

10-\

to

3/3

169

I I I I I I I I I I I I I I I

I I I I I I I I I I I I I I I I


I I I I I


I I I I I


I I I I I


I I

BFX73-2N918 2N3600 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.

TO·72


5-6897

ABSOLUTE MAXIMUM RATINGS Symbol VeBo VCEO VESO Ie Ptot T stg , Tj

Parameter

= 0) Collector-emitter Voltage (Is = 0) Emitter-base Voltage (Ie = 0) Collector-base Voltage (IE

Collector Current Total Power Dissipation at T amb " 25°C at T amb " 25°C Storage and Junction Temperature

November 1988

Value

Unit

30

V

15

V

3

V

50

mA

200 300

mW mW

- 65 to 200

°C 1/5

171

BFX73-2N918-2N3600 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

584 875

Max Max

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

10 1

nA ~


VcB =15V VCB = 15 V Tamb = 150°C

V(BR)CBO


Ic =1 ~

30

V

VCEO


Ic = 3 mA

15

V


IE =10 ~

3

V

ICBo

(sus)

V(BR) EBO VCE

(sat)


Ic = 10 mA IB = 1 mA

0.4

V

VBE

(sat)


Ic = 10 mA IB = 1 mA

1

V

DC Current Gain

Ic = 3 mA

hFE

IT

CEBO



Ic = 0 1=1 MHz

600

900

150

850

1.4

1=1 MHz VCE = 0 V VCE =10V

1.8 1

Reverse Capacitance (for 2N3600 only)

Ic = 0 f = 1 MHz

NF

Noise Figure

Ic = 1.5 mA VCE = 6 V Rg = 50 Q f = 200 MHz lor 2N3600 Ic = 1 mA VCE = 6 V Rg = 400 Q f = 60 MHz for 2N918/BFX73 for 2N3600

• See test circuits.

50

lor 2N918/BFX73 lor 2N3600

C re

Power Gain

20 20

MHz

1500

MHz

2

pF pF

3 1.7

pF pF

1

pF

4.5

dB

6 3

dB dB

VEB =0.5 V

IE = 0

G pe

172

lor 2N918/BFX73 Ic = 4 mA VCE=10V 1= 100 MHz lor 2N3600 Ic =5 mA VCE = 6 V 1= 100 MHz

Collector-base Capacitance (for 2N918/BFX73 only)

CCBO

2/5

VCE = 1 V for 2N918/BFX73 lor 2N3600

VCB=10V

Rg = 50 n f = 200 MHz for 2N918/BFX73 Ic = 6 mA VCE =12V for 2N3600 Ic = 5 mA VCE = 6 V

15 17

21

dB 24

dB

BFX73-2N918-2N3600 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter Output Power

Po'

Test Conditions

Min.

Typ.

Ic =12 mA Vcs =10V f = 500MHz for 2N918/BFX73 for 2N3600

30 20

40

It

Collector Efficiency (for 2N918/BFX73 only)

Ic = 12 mA Vcs = 10 V f = 500 MHz

25

rb'b,Cb'c

Feedback Time Constant (for 2N3600 only)

Ic = 5 mA Vcs = 6 V f = 31.9 MHz

4

DC Current Gain.

Max.

Unit

mW mW

% 15

ps

Transition Frequency. G lB13

I

G IS7G

III

JlI

VCE -1Y

80

&mb=loo·C

III

60

40

III

..... ~c

/

III

I 20

v

.......

\

,

\

"'-

-I-

III

~'-.

c ---

I- - - r-r----,---i--

VS,

Collector Current.

--

---1--,---1-+-

20

10

10

Input Admittance

-j--+-+-+I'~d--+J--1 -i-

-55·C .........

III

1-"'"

.- -

1--+-+-+-+---+-++-+-1--+-+-+-+---+-",\---1 I--+-+-+-+---+-++-+-I--+-+-+-+-+--t-

0.5

Forward Transadmittance vs. Collector Current. G 2046

G 2050

)

f::: 101 MHz

''''lOIMHz

VCE·~

BO

VeE:;;'

/" ....... :?'

b~OV VCE

b

g~

V-

"

.......

--

V

'"

60

40

20

~ A ~

~V

V

/J-I10V

VCE"SV 10V

Y. '/

'/ -b

J 8

Ie (rnA)

6

'c(rnA)

3/5

173

BFX73-2N918-2N3600 Reverse Transadmittance vs. Collector Current.

Output Admittance

VS.

Collector Current.

)

f= IQOMHz VCE =5V

1.6

Vo

1.2

f=100 MHz

I--

10V

r-

-

0.8

IVCE=5V -9

0.4

5V

r--

8

.>

..::; ~ f-

l- f- rm;- -

-

-

Ie (rnA)

Forward Transadmittance vs. Frequency.

Input Admittance vs. Frequency.

G-2Q51

1111 I C=5 rnA

)

Ic::5 mA

V E=1O V

25

100

I" 20

9

f----

15

If'

10

~

b

'7

80

"-

60

f----

40

1---1--

--

20

~

1---5

VCE '" IOV

I"

"

.... ~

-b

1

""'- "-

I

9

r

-20 f (MHz)

10'

10

Reverse Transadmittance vs. Frequency.

10

f (MHz)

10'

Output Admittance vs. Frequency. G 2053

II ! l'c· 5mA II VCCIOV

)

I I

)

IC=5 rnA

! i' I I

VCE=lOV

-b

'----

-

1/

-

J --

4/5

174

/

/

i

/'

I

10

I

,

I

-

10'

,/

-9

L H" f (MHz)

-

9 10

10'

f (MHz)

BFX73-2N918-2N3600 Figure 1 : 500 MHz Oscillator Test Circuit.

L1

A-_-+-7-f5~ OUT 1000

pF

220011

I

5-1570

5/5

175

BFX89 BFV90 WIDE BAND VHF/UHF AMPLIFIER • SILICON PLANAR EPITAXIAL TRANSISTORS • TO-72 METAL CASE • VERY LOW NOISE

APPLICATIONS: • TELECOMMUNICATIONS • WIDE BAND UHF AMPLIFIER • RADIO COMMUNICATIONS

TO·72


DESCRIPTION The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is complementary to the BFR99A. Typical applications include telecommunication and radio communication equipment.

c B

E


Parameter

= 0)

VCBO


VCER


VCEO


VEBO


Ic

= 0)

= 0)

Collector Current ~

ICM

Collector Peak Current (f

P tot


T stg , T j

1 MHz) "

25°C


November 1988

Value

Unit

30

V

30

V

15

V

2.5

V

25

mA

50

mA

200

mW

- 65 to 200

°C

1/4

177

BFX89-BFY90 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

580 880

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBO VCEK * hFE

Parameter

Test Conditions

Typ.

Unit

Vcs=15V

10

nA


Ic =20 mA

0.75

V

DC Current Gain

Ic = 2 mA

Ic = 25 mA Transition Frequency

IT

Min.

Max.


VCE = 5 V Ic = 2 mA

VCE = 1 V lor BFX89 lor BFY90 VCE = 1 V

150 150 125

20 25 20

1= 500 MHz lor BFX89 lor BFY90

1

1 1.1

GHz GHz

lor BFX89 lor BFY90

1.3

1.2 1.4

GHz GHz

Ic = 25 mA

CCSO(1)

1-------

C re

(2)

NF(2)

Gpo

(2)


Reverse Capacitance

Noise Figure

IE = 0 1=1 MHz

Vcs=10V lor BFX89 lor BFY90

Ic = 2 mA 1=1 MHz

VCE = 5 V lor BFX89 lor BFY90

Ic = 2 mA VCE = 5 V Rg = Optimized I = 100 kHz lor BFY90 Only 1= 200 MHz Rg = Optimized lor BFX89 lor BFY90 1= 500 MHz Rg = 50 Q lor BFX89 lor BFY90 1= 800 MHz Rg = Optimized lor BFX89 lor BFY90

Power Gain (not neutralized)

lor BFX89 Ic = 8 mA

lor BFY90 Ic=14mA

18 = value lor which Ie = 22 mA at VeE (1) Shield lead not grounded (2) Shield lead grounded

•

2/4

178

0.6 0.6

=1 V

VCE=10V 1= 200 MHz 1= 800 MHz

3.3 2.5

19

1.7 1.5

pF pF

0.8

pF pF

4

dB

4 3.5

dB dB

6.5 5

dB dB

7 5.5

dB dB

22 7

dB dB

VCE=10V 1= 200 MHz 21 23 1= 800 MHz 8 (3) Ip = 202 MHz, I, = 205 MHz, 1,2,-p) = 208 MHz (4) Ip = 798 MHz, t, = 802 MHz, 1,2,-p) = 806 MHz

dB dB

BFX89-BFY90 ELECTRICAL CHARACTERISTICS (continued) Parameter

Symbol

Test Conditions

Output Power

Po

for BFX89 Ic = 8 mA d ,m =-30dB (3) Channel 9 (4) Channel 62 for BFY90 Ic = 14 mA dim =- 30 dB (3) Channel 9 (4) Channel 62

Min.

Power Rating Chart.

Unit

VCE=10V 6 6

mW mW

12 12

mW mW

VCE=10V 10

(3) fp = 202 MHz, fq = 205 MHz, (4) fp = 798 MHz, fq = 802 MHz,

IB = value for witch Ie = 22 mA at VeE = 1 V (1) Shield lead not grounded (2) Shield lead grounded

Max.

Typ.

= 208 MHz = 806 MHz


(mWJ

300

200

H-......~.......i-++J-

'00 r-t-t-r--t-+-+-+-'-i-1'-.J:--t~d-+-+-+

50

'00


150

T

'Oe)

10

20

30

Ie (rnA)

Noise Figure VS. Collector Current. NF'---'--''-rrr-'---'--'''~Tn (dB)

1(r'

3/4

179

BFX89-BFV90 Forward Transmission Gain vs. Frequency.


G -3336

G-3J41

NF (dB)

2

24

/'c lOmA

20

I\.

/'c~5mA

\

16

-~

fI

\

I\.

12

f------

[--

I

10-'

4/4

180

,,

, , , f(GHz)

", , "-

L

,

II ,II

f (GHz)

BFX90 BFX91 HIGH-VOLTAGE AMPLIFIERS DESCRIPTION The BFX90 and BFX91 are silicon planar epitaxial PNP transistors in JedecTO-18 (BFX90) and Jedec TO-39 (BFX91 ) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity from 10 ~ to50mA.

T0-18

T0-39


S_6896


Parameter

Value

Unit

VCBO


-180

V

VCEO


- 180

V

VEBO Ic Ptot

Emitter-base Voltage (Ie = 0) Collector Current Total Power Dissipation at T amb

at T case

T stg , Tj

25°C for BFX90 for BFX91 " 25°C for BFX90 for BFX91

V mA

0.4 0.7

W W

1.4 2.5

W W

- 55 to 200

°C

"


November 1988

-6 -100

1/5

181

BFX90·BFX91 THERMAL DATA

I Thermal Resistance Junction-case

Rth j-case Rth j-amb

Max Max


BFX90

BFX91

Unit

125 438

70 250

DC/W DC/W


Test Conditions

Parameter

Min.

Typ.

Max.

Unit

-10 -10

nA Il A

-10

nA


VCB=-100V VCB=-100V

Emitter Cutoll Current (Ic = 0)

VEB=-4V


Ic=- 1O IlA

-180

V


Ic =- 2 mA

- 180

V

V(BR) EBO


IE=-101lA

-6

V

VCE (sat)


Ic=-10mA

IB =-1 mA

- 0.1

- 0.25

V


Ic =-10 mA

IB =- 1 mA

- 0.74

- 0.9

V

Ic=-101lA Ic=-1 mA Ic=-10mA Ic=-101lA Tamb = - 55 DC Ic=- 1OO IlA Tamb = - 55 DC

VCE=-10V VCE=-10V VcE =-10V VCE=-10V

60 80 80

110 170 200

300

15

60

30

90

ICBO lEBO V(BR) CBO V(BR) CEO

VBE (sat) hFE

.

.

. .

DC Current Gain

T amb = 125 DC

VCE=-10V

hIe


Ic=-1 mA 1=1 kHz

VCE=-10V

80

IT


Ic =- 1 mA f = 20 MHz

VCE=-10V

40

CEBO


Ic = 0 f = 1 MHz

VEB =- 0.5 V

CCBO


IE = 0 f = 1 MHz

Vr:;B=-5V

Noise Figure

Ic =- 1O IlA Rg = 10 kQ f = 10 kHz f = 1 kHz 1= 100 Hz

NF

182

60

160

MHz

20

25

pF

5

7

pF

1 1 2

3 3 10

dB dB dB

VCE=-5V B = 2 kHz B = 200 Hz B = 20 Hz

hie

Input Impedance

Ic=-1mA 1=1 kHz

VCE=-10V

2.5

12

kQ

hoe

Output Admittance

Ic=-1 mA f = 1 kHz

VCE=-10V

5

25

!LS

• Pulsed: pulse duration = 3001'5, duty cycle

2/5

400

=t

%.

BFX90-BFX91 DC Current Gain.

--+ 240


P~~~jtl Tn [- .

200

tiill iItr"

I i

'60

i

II

'ilil

!):V'

1-"" II

I

I :!"!!II

40

,

-55°(% i.

-iT1:",

,m",

: ! ,

,

" 'illl ] ,I

II!!'" . , VI I, i ': I' , 1\1 .1 I I,! ' I Ii' I' , iill , I!,! i III, 11II I Ilii II

/'

80

0.2

25.:>t- 'Ii

~!

Ir" I 1111

v

120

,

III Tamb = 125°( I,/Ii:i'

i-

-

1111 I :11"1 ~ I 1,'1,11

illll! ,Iilll

I

0,15

0.1

,

10-'

10 -'I C (rnA)

Base-emitter Saturation Voltage.

10

-Ie (rnA)

Normalized h Parameters VS. Collector Current. (,_3160/\

-VBE(satl (V)

o.B

0.6

0.4

0.2

10" 10- 1

-Ie

Normalized h Parameters ture.

VS.

Ambient Tempera-

-

VeE =-10V i C=-lmA

0.6

hie

A

~ '/

/ /j II

~

,/

,/ k:;:: '/'

f =lkHz

hoe 0.8

~r

.c..;,..u

L.....-J'--.L.J.....LLl.JJL_-:-~-LlJ.."

10-\

-Ie (rnA)

Emitter-base and Collector-base Capacitances.

/,

_.

'2

(rnA)

'r---

~

..6 ~

~ hoe

-- I--

hie

hf~ and hr~

I-- - I - - I--

'I

0.4

-60

-20

20

60

3/5

183

BFX90-BFX91 Contours of Constant Transition Frequency. -VCE

·,,

Equivalent Input Noise Voltage.

G 3163

(V 1

,

SMHz· 0

0

--~ 80

60

4

--

i~

veE =-5V

r

,

,

· ·

~~

,

, , ," 10-

, ,,

,

...

10

, ,"

Equivalent Input Noise Current.

·

I

,

,

IVc ,,~- 5."

(kn)

• C--

10 1

..... 1:7

Pr~

...... l-~~

" 1'"

Z

ft

:1

aN

I

T --........:

""1"

, ,

Contours of Constant Noise Figure (f

6

Rg (kn)

I

5

.

,

, ,

10

3

4/5

184

-........

.

~

1dB

3' ,...,.. " ~~ N"' J$~ 10-2

:~ l:-

,

-.......

,0

0

10-1

"'-

1"'-;

16

-........

4

t--....' t" e

,

'~' 1'-...

,

= 10kHz). , G - 366

81'si; j'g --" ,...J-+

""-l VeE =-5V f :: 10kHz B =2kHz

4

,

I""":

,~

'dB

4

(rnA)

1(>-

·,

I'

1

-Ie

·, ·

I

~

ZI

G-3167

8=2QOHz

'~

f:::::='s;

Contours of Constant Noise Figure (f = 1 kHz).

VeE =- 5V f ,,1kHz

.-'~=t=

H" f"io.

B =20Hz

10

3166

6

10-1

'~p....

~= -

'-

+

t:::

f ,,100Hz

,

,~

6

VCE=-SV f ",100Hz

llJK

, 1----

10

-Ie (rnA)

G

Rg •

--+-+ :+ I

2

1.

, ,

10- 1

Contours of Constant Noise Figure (f = 100 Hz).

,

Rg

10- 2

(,_3165

(;;) ,

I

I L----.JL-'---1-.LJ....LLLL-_L..-'-LLLU-LJ

1O~

-I C (mA)

!I

1-+ I

2

(kO)

i

I Ii J! LL H------+------..]"~,

f ,,1kHz

10 kHz

,

10-

iii! I

I

~

10"2

,

\

T1

II

I

~-

,'I".

-'c(mA}

,0-

12~

'lEl

~B

~4

6 ""-a .....

I

I II,

J".,

1'--..

-.......

~

.............

!-.....

10-1

I

, ,.

I

-Ie (mA)

BFX90-BFX91 Contours of Constant Wide Band Noise Figure.

Noise Figure

vs. Frequency.

6-31 9

Rg

( kil) e 1-------

.e.-,~

=

,~

""-

"'"'-

VeE .::-5V

B=10Hz to 10kHz

~

G-2065

(dN:)

~

;-~~~- -

2~

16

I

"- 'Z

t-..

K:6"'

R:

K

- I C :-lO,uA. Rg =10kfi

,c""'J __ 1c=_lmA,R g =tkn

"

ok------~4

10-1

-

2dB

r.........

"" ""

_--,~----TIT1II

t'-...t---

r--..

~

~ 10-1

......

t-......

,

..

-Ie (mA)

~

.... , /

10

SGS-ntOMSON

~~!:Iiil@~~~Iiil@IlJ~!:~

10'

10'

5/5

185

BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications.

TO-39


c B

E


Parameter ~

VCBO


VCEO

Collector-emitter Voltage (Is ~ 0)

V ESO Ic

0)

Emitter-base Voltage (Ic ~ 0) Collector Current

BFY50

BFY51

80 V

60 V

40 V

35 V

30 V

20 V

6V 1A

ICM


1.5 A

Ptot

Total Power Dissipation at T amb ,; 25°C at T case'; 25°C

0.8 W 5W

T stg , T j January 1989


BFY52

- 65 to 200 'C

1/3

187

BFY50-BFY51-BFY52 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

35 218


Parameter

Test Conditions for BFY50 VCB =60 V VCB = 60 V for BFY51 VCB =40V VCB =40 V for BFY52 VCB = 30 V VCB = 30 V


ICBo

lEBO V(BR)CBO

V(BR)CEO

. .

hfe

T case = 100°C

50 2.5

!JA

T case = 100°C

50 2.5

!JA

T case = 100 'C

50 2.5

!JA

50 2.5

!JA

80 60 40

V V V


Ic = 30 mA

for BFY50 for BFY51 for BFY52

35 30 20

V V V

6

V

IE = 100 ~A IB=15mA for BFY50 for BFY51 and BFY52 Ic = 1 A IB = 0.1 A for BFY50 for BFY51 and BFY52


Ic = 150 mA Ic = 1 A

DC Current Gain

for BFY50 Ic=10mA Ic = 150 mA Ic = 1 A for BFY51 Ic = 10 mA Ic = 150 mA Ic = 1 A for BFY52 Ic = 10 mA Ic = 150 mA Ic = 1 A


=

nA

Ic = 150 mA

VCE = 6 V Ic = 1 mA

IB = 15 mA IB = 0.1 A

0.14 0.14

0.2 0.35

V V

0.7 0.7

1 1.6

V V

0.95 1.5

1.3 2

V V

VCE=10V VCE=10V VCE=10V

20 30 15

40 55 30


30 40 15

55 70 40

VCE=10V VCE =10V VCE =10V

30 60 15

80 130 60

f = 1 kHz for BFY50 for BFY51 for BFY52

25 30 40


45 60 120

t %. ~

a..""'!I 188

nA


Pulsed pulse duration = 300 (.ts, duty cycle

2/3

nA

Ic=100~A

Ic = 10 mA

.

nA



hFE *

Unit

T case = 100 °C

VCE(sa!)

.

Max.

VEB = 5 V VEB = 5 V


VBE (sat)

Typ.


V(BR)EBO

.

Min_

SGS-THOMSON

U1AJll!:Im@~~I<©ilIm@ll!lll!:@

BFY50-BFY51-BFY52 ELECTRICAL CHARACTERISTICS (continued) Symbol fT

CCBO hie

hre

hoe

Parameter Transition Frequency

Test Conditions Ic = 50 mA

VCE=10V for BFY50 for BFY51 for BFY52


IE = 0 f = 1 MHz

VcB =10V

Input Impedance

Ic = 10 mA f = 1 kHz

VCE = 5 V for BFY50 for BFY51 for BFY52





Reserve Voltage Ratio

Output Admittance

Min.

Typ.

Max.

Unit

60 50 50

100 110 120

MHz MHz MHz

10

pF

180 220 400

Q Q Q

55xl0- 6 70xl0- 6 130x10- 6

30 35 70

IlS IlS IlS

td

Delay Time

Ic=150mA IB1 = 15 mA

Vcc=10V V BE = - 2 V

15

ns

tr

Rise Time

Ic = 150 mA IB1 = 15 mA

Vce=10V VBE = - 2 V

40

ns

ts

Storage Time

le=150mA Vee=10V IB1 =-I B2 = 15 rnA

300

ns

If

Fall Time

Ie = 150 mA Vee=10V IB1 = - IB2 = 15 rnA

60

ns

• Pulsed: pulse duration = 300 flS, duty cycle = 1 %.

3/3

189

BFY56 BFX56A AMPLIFIERS AND SWITCHES DESCRIPTION The BFX56 and BFY56A are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for amplifier and switching applications over a wide range of voltage and current.

TO-39


c B

E


BFY56

BFY56A

Unit

VCES

Collector-emitter Voltage (VSE = 0)

85

85

V

VCEO


45

55

V

VESO


7

V

Collector Current

1

A

0.8 5

W W

- 55 to 200

°C

Ic P tot

T stg , Ti

Parameter

Total Power Dissipation at T amb :5 25°C at T case :5 25°C Storage and Junction Temperature

November 1988

1/4

191

BFY56-BFY56A THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

35 2t9


Parameter

ICES lEBO V(SR)CES

.

Test Conditions


VCE=50V VCE = 50 V


V EB = 5 V

Collector·emitter Breakdown Voltage (VSE = 0)

Ic = 100 IlA

Collector·emitter Breakdown Voltage (I s = 0)

Ic = 30 mA

V(BR)ESO

Emitter·base Breakdown Voltage (Ic = 0)

IE= 1OO IlA

VCE(sa!)


V(BR)CEO

VSE(sat)

hFE

h,e

IT

.

. .


2/4

192

lor BFY56 Ie = 150 mA Ic = 1 A lor BFY56A Ic = 10 mA Ic = 150 mA Ic = 1 A lor BFY56 Ic =0.1 mA Ic = 500 mA Ie = 150 mA lor BFY56A le=0.1 mA Ic = 5 mA Ic = 150 mA Ic = 500 mA

DC Current Gain



Pulsed: pulse duration = 300 /is, duty cycle

lor BFY56 Ie = 150 mA Ic = 1 A lor BFY56A Ic 10 mA Ic = 150 mA Ic = 1 A

= 1 %.

Min.

T amb = 150°C

lor BFY56 lor BFY56A

Typ.

Max.

Unit

0.2 0.2

20 20

nA IlA

0.1

20

nA

85

V

45 55

V V

7

V

Is = 15 mA Is=0.1A

0.13 0.65

0.3 1.2

V V

IB = 1 mA Is=15mA Is = 0.1 mA

0.05 0.13 0.65

0.25 1

V V V

Is = 15 mA Is = 0.1 A

0.85 1.5

1.5 2.3

V V

Is = 1 mA Is = 15 mA Is = 0.1 A

0.68 0.85 1.3

0.8 1 1.6

V V V

150

VCE=10V VCE=10V VCE = 1 V

15 20 30

50 55 70

VCE = 1 V VCE = 1 V VCE = 1 V VCE=10V

20 50 40 25

50 85 80 55

Ie = 1 mA 1=1 MHz

VCE = 5 V lor BFY56 lor BFY56A

Ic = 50 mA 1= 20 MHz

VCE= 10V lor BFY56 lor BFY56A

120

60 80 40 60

90 90

MHz MHz

BFY56-BFY56A ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter Emitter-base Capacitance

Ic = a 1=1 MHz

CCBO


IE = a 1=1 MHz

Input Impedance

Ic = 1 mA 1=1 kHz

hie


h re

Min.

Typ.

Max.

Unit

VEB = 0.5 V

50

80

pF

VCB=10V

14

25

pF

VCE = 5 V lor BFY56 lor BFY56A

1.8 2

Test Conditions

CEBO

Ic = 1 mA 1=1 kHz

kQ kQ

2.1x10- 4

VCE = 5 V



DC Current Gain.

!

10- 2

10- 1

V"

10


10 2 Ie

(rnA)

Emitter-base and Collector-base Capacitances. (; 314811

C (pF)

60

"(ESO Ie= 0

40

..........

,

lit

II I

CCBOIE=O

K

20

I

10

4

6 8

1

4

"

"-

10

I

I 4

6 8

VR (v )

3/4

193

BFY56-BFY56A Transition Frequency.

Normalized h Parameters. G 314911

'T (MHz )

+ ~J

i

60

-----"-i

60

[~_t__

t7

I

V-

I 'J I iii ,I

!

,

-

~~1o=~~~

~~

I

i l-----t- t 10

194

~

-j

l-

I

,

4/4

t1tffi

-

,

20

1--

-l _W'~

/' I-'

40

I c--

i'

,

till 'B

Ie

(mA)

10-1

'---_-L-l_LLLill1_~--'-'-LUll_

10- 1

10

BFY64 HIGH-CURRENT GENERAL PURPOSE TRANSISTOR DESCRIPTION The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels up to 500 mA, line driver, memory applications and in low-noise amplifiers.

TO-39



Unit

Vcso


Parameter

- 40

V

VCEo


- 40

V

VESO


-5

V

- 500

mA

0.7

3

W W

- 65 to 200

°C

Symbol

Ic Ptot T stg , Tj

Collector Current Total Power Dissipation at T amb ,; 25°C at T case'; 25°C Storage and Junction Temperature

November 1988

1/4

195

BFY64 THERMAL DATA Max Max


58 250


Test Conditions

Parameter

Min_

Typ_

Max.

Unit


VCE=-25V

V(BR)CBO


Ic=-10flA

- 40

V(BR)CEO *


Ic =- 10 mA

- 40

V(BR)EBO

Emitter-base Breakdown Voltage (Ie = 0)

IE =-10 flA

-5

VCE(sat) *


Ic =- 50 mA Ic=-150mA Ic =- 500 mA

IB =- 2.5 mA IB = - 15 mA IB =- 50 mA

- 0.08 - 0.18 - 0.6

- 0.3 - 0.5 - 1.8

V V V

VBE(sat) *


Ic =- 50 mA Ic =-150 mA Ic =- 500 mA

IB =- 2.5 mA IB = - 15 mA IB =- 50 mA

- 0.92 -1

-1.1 -1.4 - 2.2

V V V

DC Current Gain

Ic Ic Ic Ic Ic

VCE=-10V VCE=-10V VCE=-10V VCE =- 1 V VCE=-10V

130 200 200 150 130

ICEs

hFE

* * *

=====-

10 1 10 50 150

flA mA mA mA mA

- 30

80

V V V

hfe


Ic=-10mA 1=1 kHz

VCE=-10V

IT


Ic =- 50 mA 1=100MHz

VCE =-20V

CEBO


Ic = 0 1=1 MHz

VEB = - 2 V

15

30

CCBo


IE = 0 1=1 MHz

VCB=-10V

6

10

NF

Noise Figure

Ic = - 30 flA Rg = 10 kQ

VCE=-5V 1=1 kHz

1

hie

Input Impedance

Ic=-10mA 1=1 kHz

VCE=-10V

1

hre


Ic=-10mA 1=1 kHz

VCE=-10V

2.4x10- 4

hoe

Output Admittance

Ic=-10mA 1=1 kHz

VCE=-10V

110

ton

Turn-on Time

Ic =- 300 mA IBt = - 30 mA

Vcc=-30V

35

50

toff

Turn-oil Time

Ic =- 300 mA Vcc =- 30 V IS1 =-l s2 =-30mA

70

120

* Pulsed: pulse duration = 300 ~s, duty cycle

2/4 196

= 1 %.

nA

200 200

MHz

250

pF pF dB kQ

lLS ns ns

BFY64 DC Current Gain.

Collector-emitter Saturation Voltage. -VCEfsat) (V)

10- 1

2

10- 3

4 68

2

~ 68

lO"t

2

4 6'

10- 1

2

~ 68

1

2

10

468

2

~

,

1>8

101 -IC CmA)


..

,

10

..

, 10'

,.

-IC(mA)

Transition Frequency. G-lD"l

I--J"lhF;l'Ec,:';'0'l+ll--l--i-+-i-W+I+-_-I--+-I--Wj~: ; 1.6

1.4

,

I

I

1.2

-;;

1.0

lamb

=-55·C

1O'

J.,..

~

0.8

C;;

100·e

0.6

., ,

0 .•

,

0.2 4

68

1O

, ,

1O

4

10 2

-Ie (rnA)


10- 1

"

2

4

~

6'

4

10

6

e 10 2

-Ie (mA)

Switching Characteristics.

G-204211

C (pF)

~"~--I--W-W+U--+-I-WI-l+Ill--l--l-I-I-I-I.j4i

16

I.

.......

I

ESO Ie =0

I

I

iii

i i i !I:

"

12 10

CCBO I

,

,.

,0

, I

,.

, 10

,.

-VR (V)

'0

, ,. 10'

-Ie (rnA)

3/4

197

BFY64 Switching Characteristics vs. Ambient Temperature. (ns)

70 60

50 40

30

20

10

4/4

198

Countours of Constant Noise Figure.

BFY76 LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTION The BFY76 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise amplifier circuits from audio to high frequencies.

TQ-18


c B

E


Value

Unit

VCES


60

V

VCEO


60

V

VEBO


8

V

Ic Ptot T stg , T j

Parameter

Collector Current Total Power Dissipation at T amb :s; 25°C at T case :s; 25°C Storage and Junction Temperature

January 1989

50

mA

0.36 1.2

W W

- 55 to 200

°C 1/4

199

BFV76 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

146 486


Parameter

VCE =50 V VCE =50 V


VEB = 5 V

V(BR)CES


Ic = 10

V(BR)CEO *


V(BR)EBO VCE(sa!) *

lEBO

Min.

Test Conditions


ICES

Typ.

Tamb = 150°C

IlA

Max.

Unit

20 20

IlA

20

nA

nA

60

V

Ic = 10 mA

60

V


IE=101lA

8

V


Ic = 1 mA

IlA

IB =0.1 mA

0.15

0.35

V

0.7

V

VBE


Ic = 100

VCE = 5 V

0.5

0.58

hFE *

DC Current Gain

Ic=101lA Ic = 100 IlA Ic = 1 mA Ic = 5 mA

VCE VCE VCE VCE

30

70 120 190 220

= = = =

5 5 5 5

V V V V

150

300

hIe


Ic = 1 mA 1=1 kHz

VCE = 5 V

80

220

IT


Ic = 1 mA 1= 20 MHz

VCE = 5 V

70

100

CEBO


Ic =0 1=1 MHz

VEB=0.5V

3.5

6

pF

CCBO


IE = 0 1=1 MHz

VCB = 5 V

3.5

6

pF

Noise Figure

Ic = 10 IlA Rg = 10 kn

VCE = 5 V 1= 100 Hz 1=1 kHz I = 10 to 10 000 Hz

4 1.5 1.9

15 4 4

dB dB dB

NF

hie

Imput Impedance

Ic = 1 mA 1=1 kHz

VCE = 5 V

8

hr.


Ic =1 mA 1=1 kHz

VCE = 5 V

3xl0-4

hoe

Output Admittance

Ic = 1 mA 1=1 kHz

VCE = 5 V

11

• Pulsed: pulse duration = 300 j.ls, duty cycle = 1 %.

2/4

200

350 MHz

kn

IlS

BFY76 Collector-emitter Saturation Voltage.

DC Current Gain. G-)057

IllIm

hF'

VeE

=5V

!

300

,.1

I

'.'[/

H-+++fHII--+tt'~b='fii~'

I,

,I', I

250

v

I!'il I :~ i 1 !IIII lilli, ! !il,

1iJ!..-

50 :.-- '

o .... 1" 11111 10-3

iii

10-2

'0

10-2 '--P-¥!·~-+-'-!:'-I:'l"'---,f--'cl-'¥i['L--+-'-l-'t'l'

10-2

'e(mA)

10-'

Collector-base capacitance.

High Frequency Current Gain. G 3060

ecao

r-V~E15~1 f =20MHz

'e!mAl

'0

(pF)

/'

6

I----f---

f---

G-3061

I

~-

t-'H---r--r-t-- ---- ~ 0__ f-+t--t--t- f---I-- -

-

-1---- r--

f----f---. f--

-- ---- --1-

II

4

/

L_

I 1

I Normalized h Parameters.

,

..

Ii I '0

IC{mA)

-

--f----

--"'"

--

r---

I--t--'r'.. -- ___ 1--- _'"=~ -f- -

I

I

1--\--+--+--+-+-- I--

!

-=:::r- ~I-

___

I--t--t--t- f--- ----1--1-- - ---

-- r-- f---'0

'5

20

--

r--25 Ves(V)

Contours of Constant Noise Figure (f = 100 kHz).

3/4

201

BFY76 Contours of Constant Noise Figure (f

= 1 kHz).

= 10kHz).

Countours of Constant Noise Figure (f

G 3065

1'\::',

~T-'

Rg (kfl)

:\:\"

.-

~\

" ~:

r-~

.--',;.:

--

~

~

-=6 ,

NF(dB)

10·

NF

)

I

I

~;

VeE'" SV B", 15.7kHz

I

~ I

I

,

!

j !

~'\'

i

"'\ ~

--~

'"

J

II i

l-

202

i

!

NF (dB )

I

,, I

!

I~!

.!

\

Ii

,

.i ",

. i:11

vfl J/!!

-

~

I'

,

I

10

,

l~ ~30"~

", :I~Jo~l In-m , "

Rg(kJ))

i

il

'"

! ~

" c: 1ffiI-,;: . I ,,',

i

rg ~ i~Cnt-~~1

'

IJ

'1

,2

" ;o ,'if

I

G-J073

li~

~: :;z.

,

! ,

!

ICCuA)

I'll IIIIII!IIW

• i IVc'~5v~ i

10

Ie =mo~A1

i

I

4/4

I!

Illn I

T

10'


! "

i~

I , "

1B=rr

G-306S

,

I i

6

10

, :

Ii

I

I

-

III

4

8

10'

Noise Figure vs. Source Resistance. (dB

"' ""-

VeE = 5V f = 10kHz

10

, "

r---!-i--

r3

8

10

--

r\.

-

10

1

k'

r-

-

"-

~

11

_.. '-

1\

.

fJI -

.........

-

P\ f\-

/"

"\.'"

NF(dB) VeE = SV f:: 1KHz B:: 200Hz

--

f--

---

:; Ji

I~at tJ"1 '«

,;

I-S'

! ;

II

I '.

1

'

10

f(MHz)

I i!

BSS26 HIGH -VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSS 26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for high voltage, high current switching applications.

TQ-18


c B

E


Parameter

= 0)

VCBO


VCES


VCEo


VEBO Ic Ptot T stg , Tj January 1989


= 0)

= 0)

= 0)

Collector Current Total Power Dissipation at T amb ~ 25°C at T case ~ 25°C Storage and Junction Temperature

Value

Unit

60

V

60

V

40

V

6

V

1

A

0.36 1.2

W W

- 55 to 200

°C 1/4

203

BSS26 THERMAL DATA Max Max


146 486

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBO V(BR)CBO

V(BR)CES

V(BR)CEO'

V(BR)EBO

VCE(sat)

VBE(sat)

hFE

.

IT

. .

Parameter

Mln_

Test Conditions

60

V


Ic =101lA

60

V


Ic =10 mA

40

V


IE=101lA

6

V

I


Ic=100mA Ic = 500 mA 1A Ic =

IB = 10 mA IB =50 mA IB = 0.1 A


Ic = 100 mA Ic = 500 mA 1A Ic =

IB = 10 mA IB =50 mA IB =0.1 A

DC Current Gain

Ic Ic Ic Ic


= 10 mA = 100 mA = 500 mA 1A =

Ic = 50 mA

VCE VCE VCE VCE

=1 =1 =1 =5

V V V V

VEB = 0.5 V

CCBO


IE = 0 I = 1 MHz

VCB=10V

ton

Turn-on Time

Ic=500mA IB1 =50 mA

Vee = 30 V

Turn-off Time

Ic = 500 mA Vee=30V IB1 =-IB2 = 50 mA

• Pulsed: pulse duration = 300 ~s, duty cycle = 1 %

0.8

0.17 0.3 0.5

0.3 0.5 0.95

V V V

0.78 0.95 1.05

0.9 1.2 1.7

V V V

25 40 25

55 75 45 45

250

400

V cE =10V

Ic = 0 I = 1 MHz

204

IlA IlA

Ic=101lA


2/4

Unit

1.7 120


T amb = 100°C

CEBO

toff

Max_

VCB=40V VCB=40V

I = 100 MHz

.. ..

Typ-


•• See test circuil.

MHz

40

55

pF

4.8

12

pF

15

35

ns

40

60

ns

BSS26 DC Current Gain.

Collector-emitter Saturation Voltage. o

0_3050

J()49

I IIIIII I Ilill

VCE(sat) (V)

II VCE =1

Ie ::: 10

Is

0.6

80

r--.,

60

0.5

1\

V

0.4

40

0.3

7'"

.........

0.2

V

20

, ,

0.1

,.

-

,

,

'B

10

, ,

10'

,.

, ,

,


, ,

B

,

, , ,

B

10

Ie (mA)

10'

B

Ie (rnA)

High Frequency Current Gain. G

3052

II

VSE(sat )

Ie =101 8

(V)

1.2

(18

0.6

0.4

\

/

- -

1\

/ / VCE '" 10V f :: IOOMHz

0.2

,

, B

,

,

'B

10'

10

6B

,

'c(mA}


II ,

'B

10

,

6 B

10'

6 8

Ie (rnA)

Collector Cutoff Current. G lOS!.

G )053

(C80

leBO

(pF)

(~A)

\ \

veB =40\1 IE =0 10

/ B

.........

V 6

, /

2

10-1 10

15

20

VeB (V)

!LV

25

50

15

I

3/4

205

BSS26 Switching Characteristics.

(ns)

,

Ptot

r-+-t

6~~ I----~

,

,r--....

10

G-305

_JOS5

f-fts

~ ,~ 6

i

1.6

r- r-l...l

~~

I,

,

(mW)

1,2

I--

....

Vee :30V

,

~

0,8

Ic='0IEn=-1OIB2

0.4

F0-

~ '-t,. ~~. ~

r- ~EI"R ~"" 1'.l - t-- ~

100

200

400

600 Ie (mAl

50

Test Circuit for lon, toff.

VBB = -3,8V

+9.7fl

VIN~"F

.Y,62Jl 5-4618 Pulse generator :

t" U ~ 1.0 ns PW

~10Jls

Z'N~50Q

DC<2%

4/4

206

To oscilloscope: tr < 1.0 ns Z'N;> 100 kQ.

100

150

BSS71S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71 S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 !lA to 100 mAo The complementary PNP type is the BSS74S.

T0-18


c

::4:

B

E

S_SB96


Value

Unit

VCBO

Collector-base Voltage

200

V

VCEO


200

V

VEBO

Emitter-base Voltage

Ic IB

P tot T stg , Tj January 1989

Parameter

Collector Current Base Current

6

V

200

mA

50

mA

S;

0.5 2.5

W W


200

°C

Total Device Dissipation at T amb at T case

25°C S; 25°C

1/2

207

BSS71S THERMAL DATA 70

Max

Thermal Resistance Junction-case

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Max.

Unit

ICBo

Collector Cutoll Current (I E = 0)

VCB =- 150 V

- 50

nA

ICEo

Collector Cutoff Current (IB = 0)

VCE=-150V

- 500

nA

lEBO


VBE = 5 V

- 50

nA

V(BR)CBO

Collector-emitter Saturation Voltage (IE = 0)

Ic=-1001lA

- 200

V

V(BR)CEO *


Ic =-2 mA

- 200

V

V(BR)EBO


IE =-100

-6

V

VCE(sat) *


Ic =- 10 mA Ic =- 30 mA Ic =- 50 mA

IB =- 1 mA IB =- 3 mA IB =- 5 mA

- 0.3 - 0.4 - 0.5

V V V

VBE(sat) *


Ic =- 10 mA Ic =- 30 mA Ic =- 50 mA

IB =- 1 mA IB =- 3 mA IB =- 5 mA

- 0.8 - 0.9 -1

V V V

DC Current Gain

Ic=-1 mA Ic=-10mA Ic =-30 mA


30 50 40

250


Ic =-20 mA 1= 20 MHz

VCE =- 20 V

50

200

CCBO

Collector -base Capacitance

IE = 0 1=1 MHz

VCB =- 20 V

3.5

pF

CEBO


Ic = 0 1=1 MHz

VEB =- 0.5 V

45

pF

ton

Turn-on Time

Ic =- 50 mA Vcc =- 100 V

IB1 =- 10 mA

100

ns

toft

Turn-oIl Time

Ie =- 50 rnA IB1 =-IB2 =-10 rnA Vcc=-100V

400

ns

Symbol

hFE *

IT

Parameter

* Pulsed: pulse duration

2/2

208

= 300 ~s, duty cycle = 1 %.

Test Conditons

IlA

Min.

Typ.

MHz

BSS72S HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA

DESCRIPTION The BSS72S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 !lA to 100 mA. The complementary PNP type is the BSS75S.

TO-18


c

::4:

B

E

s-

6B96


Parameter

Value

Unit

VC80


200

V

VCEO


200

V

VE80 Ic 18 Ptot Tstg , Tj January 1989

6

V

200

mA

Base Current

50

mA

Total Device Dissipation at Tamb ,;; 25°C at Tease';; 25°C

0.5 2.5

W W

- 65 to 200

°C

Emitter-base Voltage Collector Current


1/2

209

BSS72S THERMAL DATA Max

Thermal Resistance Junction-case

70


Max.

Unit

ICBo


VCB=150V

50

nA

ICED


VCE=150V

500

nA

lEBO


VBE = 5 V

50

nA


Ic = 100 flA

200

V

V(BR)CEO


Ic = 10 mA

200

V

V(BR)EBO


IE = 100 flA

6

V


Ic = 10 mA Ic = 30 mA Ic = 50 mA

IB = 1 mA IB = 3 mA IB = 5 mA

0.3 0.4 0.5

V V V


Ic = 10 mA Ic = 30 mA Ic = 50 mA


0.8 0.9 1

V V V

DC Current Gain

Ic = 1 mA Ic = 10 mA Ic = 30 mA

VCE=10V VCE = 10V VCE = 10V

30 50 40

250


Ic = 20 mA f = 20 MHz

VCE = 20 V

50

200

CCBO


IE = 0 f = 1 MHz

VCB = 20 V

3.5

pF

CEBO


Ic = 0 f= 1 MHz

VEB = 0.5 V

45

pF

ton

Turn-on Time

Ic = 50 mA Vcc=100V

IB1 = 10 mA

100

ns

toft

Turn-off Time

Ic = 50 mA IB1 = - IB2 = - 10 mA Vcc = 100 V

400

ns

V(BR)CBO

.

VCE(sat)

.

VBE(sat)

.

hFE *

fT

Parameter

- Pulsed: pulse duration

2/2

210

Test Conditons

= 300 Ils. duty cycle = 1 %.

Min.

Typ.

MHz

--


DESCRIPTION The BSS74S is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 J.lA to 100 mA. The complementary NPN type is the BSS71 S.

TO-18


:~:

B" NPN

E

5_6896


Parameter

Value

Unit

VCBO


- 200

V

VCEO


- 200

V

VEBO Ic IB

P tot T stg • Ti January 1989

Emitter-base Voltage Collector Current Base Current Total Device Dissipation at T amb at T case

25°C :::; 25°C

:::;


-6

V

-100 - 50

mA mA

0.5 2.5

W W

- 65 to 200

°C 1/2

211

BSS74S THERMAL DATA Thermal Resistance Junction-case

70

Max

ELECTRICAL CHARACTERISTICS (T amb = 25 CC unless otherwise specified) Symbol

Max.

Unit

ICBo


Parameter

VCB=-150V

- 50

nA

ICEo


V cE =-150V

- 500

nA

lEBo


VBE = 5 V

- 50

nA


Ic =- 100 flA

- 200

V


Ic =- 2 mA

- 200

V


IE = - 100 flA

-6

V


Ic =- 10 mA Ic =- 30 mA Ic =- 50 mA

IB =- 1 mA IB =- 3 mA IB =- 5 mA

- 0.3 - 0.4 - 0.5

V V V


Ic=-10mA Ic =- 30 mA Ic =-50 mA

IB =- 1 mA IB =- 3 mA IB =- 5 mA

- 0.8 - 0.9 -1

V V V

DC Current Gain

Ic = - 100 f!A Ic = - 1 mA Ic=-10mA Ic =-30 mA

VCE = - 1 V VCE=-10V VCE=-10V VCE=-10V

20 30 50 35

150


Ic =- 20 mA 1=20 MHz

VCE =- 20 V

50

200

CCBO


IE = 0 1=1 MHz

VCB=-20V

3.5

pF

CEBO


Ic = 0 1=1 MHz

VEB =- 0.5 V

45

pF

ton

Turn-on Time

Ic = - 50 mA Vcc = - lOa V

IB1 =-IOmA

lao

ns

toft

Turn-off Time

Ic =- 500 mA IB1 =-IB2 =-10 mA Vcc=-IOOV

400

ns

V(BR)CBO

V(BR)CEO

.

V(BR)EBO

VCE(sat)

.

VBE(sat)

.

hFE

.

IT

Test Conditons

• Pulsed: pulse duration = 300 Ils, duty cycle = 1 %.

2/2

212

Min.

Typ.

MHz


DESCRIPTION The BSS75S is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 ~A to 100 mA. The complementary NPN type is the BSS72S.

TO-18


c

:~:

B

E


Parameter

Value

Unit

VCBO


- 200

V

VCEO


- 200

V

VEBO


Ic IB

P,o, T stg , Tj January 1989

Collector Current Base Current Total Device Dissipation at T amb :;; 25°C at T case:;; 25°C Storage and Junction Temperature

-6

V

- 100

mA

- 50

mA

0.5 2.5

W W

- 65 to 200

°C 1/2

213

BSS75S THERMAL DATA Thermal Resistance Junction-case

70

Max

ELECTRICAL CHARACTERISTICS (T amb = 25 "C unless otherwise specified) Parameter

Max.

Unit

Icso

Vcs=-150V

- 50

nA

ICEo

Collector Cutoff Current (Is = 0)

VCE=-150V

- 500

nA

IEso


VSE = 5 V

- 50

nA

V(SR)CSO

Collector-emitter Saturation Voltage (IE = 0)

Ic =-100

V(SR)CEO *


Ic =- 2 mA

V(SR)ESO


IE =-100

VCE(sat) *


Ic=-10mA Ic =- 30 mA Ic =- 50 mA

Is=-1mA Is =-3 mA Is =- 5 mA

- 0.3 - 0.4 - 0.5

V V V

VSE(sat) *


Ic=-10mA Ic =- 30 mA Ic =- 50 mA

Is =- 1 mA Is =- 3 mA Is =-5 mA

- 0.8 - 0.9 - 1

V V V

DC Current Gain

Ic=-1 mA Ic=-10mA Ic =- 30 mA


30 50 40

250


Ic =-20 mA f = 20 MHz

VCE =- 20 V

50

200

Ccso


IE = 0 f = 1 MHz

Vcs=-20V

3.5

pF

CEBO


Ic = 0 f = 1 MHz

VEB =- 0.5 V

45

pF

ton

Turn-on Time

Ic =- 50 mA Vcc =-100 V

1st =- 10 mA

100

ns

toff

Turn-off Time

Ie =- 50 mA IS1 =-l s2 =-10 mA Vcc =- 100 V

400

ns

hFE *

fT


2/2

214

~

300 ~s, duty cycle = 1 %.

Test Conditons

Min_


Symbol

JlA

JlA

Typ.

- 200

V

- 200

V

-6

V

MHz

BSV15 BSV16 MEDIUM POWER AMPLIFIERS DESCRIPTION The BSV15 and BSV16 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case, intended for use in medium power general industrial applications.

TO-39



Value

Parameter

Unit

BSV15

BSV16

VCES

Collector-emitter Voltage (V8E = 0)

- 40

- 60

VCEO


- 40

- 60

VE80


Ie

Collector Current

18

Base Current

Ptot T stg , Tj October 1988

Total Power Dissipation at T case <; 25°C Storage and Junction Temperature

-5

V V V

- 1

A

- 0.2

A

5

W

- 65 to 200

°C 1/4

215

BSV15-BSV16 THERMAL DATA Max Max


35 200

ELECTRICAL CHARACTERISTICS(T amb = 25 "C unless otherwise specified) Symbol

ICEs

ICEx

IEso

Parameter

Max.

Unit

T amb = 150°C

- 0.1 - 50

IlA flA

T amb = 150°C

- 0.1 - 50

IlA flA

T amb = 100°C

- 50

IlA

T amb = 100°C

- 50

flA nA

Test Conditions


for BSV 15 VCE=-40V VCE =-40V for BSV 16 VCE = - 60 V VCE = - 60 V

Collector Cutoff Current (VSE = 0.2 V)

for BSV 15 VCE=-40V for BSV16 VCE=-60V


VES = - 4 V

Min.

Typ.

- 50

V(SR) CES


Ic =- 1O IlA

for BSV15 for BSV 16

- 40 - 60

V V

VCEO(sus)'


Ic=-10mA

for BSV 15 for BSV 16

- 40 - 60

V V

V(BR) EBO


IE=-10flA


Ie =- 500 mA

Is =- 25 mA

- 0.25

Ic = - 100 mA Ic = - 500 mA

VCE=-1V VCE=-1V

- 0.7

- 0.85

Ic =- 0.1 mA

VCE =- 1 V Gr. 6 Gr. 10 Gr. 16 VCE=-1V Gr.6 Gr.10 Gr. 16

15 20 30

44 75 120

40 63 100

63 100 160

VCE (sat) VBE hFE

Base-emitter Voltage DC Current Gain

Ic = - 100 mA

,


2/4 216

=

300 fls. duty cycle

=

1 %.

V

-5 -1 -1 -1.4

100 160 250

V V V

BSV15·BSV16 ELECTRICAL CHARACTERISTICS (conlinued) Parameter

Symbol hFE

Ic =- 500 mA

VCE = - 1 V Gr. 6 Gr. 10 Gr. 16

hfe


Ic = - 1 mA 1=1 KHz

VCE=-5V

IT


Ic =- 50 mA 1= 20 MHz

VCE =-1 V

CEBO


Ic = 0 1=1 MHz

VEB =- 0.5 V

CCBO


ts tf ton **

DC Current Gain

Test Conditions

.. .. ..

IE = 0

Min.

Typ.

20 25 35

40 55 85

Unit

20 MHz

50 180

VcB =-10V

f = 1 MHz

Max.

20

pF 30

Storage Time

Ic =-100 mA Vcc = - 20 V IB1=-IB2 =- 5 mA

500

Fall Time

Ic =- 100 mA Vcc=-20V IB1 = - IB2 = - 5 mA

150

Turn-on Time

Ic =- 100 mA IB1 =- 5 mA

500

Vcc=-20V

pF ns ns ns

See test circuit.

Tesl Circuil for Is, If and Ion. r-----<~J-t-5V

(VSB )

-20V(VCC )

......,t pl _

OVlJ

-11V-

5-4619 PULSE GENERATOR: Ip~ 10~s

tr::; 15 ns tl::; 15 ns

l,

=

50

TO OSCILLOSCOPE: Ir ~ 15 ns liN ~ 100 KQ

Q

3/4

217

BSV15-BSV16 Safe Operating Areas.

DC Current Gain. (,-166&

~

hFE

-Ie 8 =fCMAXi IA);

--r-

W...LL "CE=-lIJ

e-85"'5-161

150

"

85V16-16

:1 1 I

....... 'jl!

10- 1

--

100

!I,

85V15-10 ,85V16-10

I

I" 85'0'15-6

I

'185VI6-6

50

,1-% 10- 1

10

Collector-emitter Saturation Voltage. -1B

hFE ::10

~

+-

-VBE (sat )

Iv)

1'1

I

I111 h FE ",10

1-.

II!

I-I----- .

++I

,

.-"

1--1,

H-

H-1++l+---+-Il++++Jj-++H-l+++

4/4

218

10'

"

III

I,

Ji--

[IT I

-+-I i

I i

I

I

! I 10

75 f--c~+++++H--+-+ ++-1d.OI~,oc--l-++i++l+

I

Ii

II

Ii ,

i

II

I

11

(,-1661

10

,

)jI

10'

I ......

0.5

~ ,

I I'


25

I

I

~

f=35MHz

I

I

1

,

10

!

I

.-

0.5

-'c(mA)

~

.J-

III

10'


rrr

)

10

+-

..-

.

10'

m IIII

BSX19 BSX20 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated switching applications.

TO-18


c 60--+1:"

NPN

E


Parameter

Value

Unit

VCBO


40

V

VCES


40

V

VCEO


15

V

VEBO


4.5

V

ICM

Collector Peak Current (t = 10

Ptot

Total Power Dissipation at T amb :<> 25°C at T case :<> 25°C

T stg , Tj

~s)


January 1989

0.5

A

0.36 1.2

W W

- 65 to 200

°C 1/4

219

BSX19-BSX20 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

146 486

Max Max


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.4 30

j.iA j.iA

T amb = 55°C

0.4 1

j.iA j.iA

T amb = 55°C

0.6

j.iA

10

j.iA

0.6

j.iA


VCB =20V VCB =20V

ICES


VCE =15V VCE =40V

ICEX

Collector Cutoff Current (VBE =- 3 V)

VCE =15V

lEBO

Emitter Cutoff Current (Ic =0)

VEB =4.5V

IBEX

Base Cutoff Current (VBE =-3 V)

VCE =15V

Collector-emitter Sustaining Voltage (RBE = 10 0)

Ic=10mA

20

V

V(BR)CEO


Ic=10mA

15

V

VCE(sat)


Ic=10mA Ic=100mA for BSX19 Ic=10mA for BSX20 Ic=10mA

IB = 1 mA IB=10mA

0.25 0.6

V V

IB = 0.6 mA

0.3

V

IB = 0.3 mA

0.3

V


Ic = 30 j.iA T amb = 100°C

VCE =20V


Ic=10mA Ic=100mA

IB = 1 mA IB = 10 mA

0.7

0.85 1.5

DC Current Gain

for BSX19 Ic=10mA Ic=100mA Ic=10mA Tamb =- 55°C for BSX20 Ic=10mA Ic=100mA Ic=10mA Tamb =- 55°C

VCE = 1 V VCE = 2 V VCE = 1 V

20 10

60

ICBo

VCER (sus)

.

. .

VBE VBE(sat) hFE

.

fT

.


T amb = 150°C

T amb = 55°C

0.35

V V V

10 VCE = 1 V VCE = 2 V VCE = 1 V

120

40 20 20

Ic=10mA for BSX19 for BSX20

VCE=10V 400 500

500 600

MHz MHz

CEBO


Ic = 0

VEB = 1 V

4.5

pF

CBO


IE = 0

VCB = 5 V

4

pF

ts **

Storage Time

Ic=10mA Vcc = 10 V IBI =-IB2 = 10 mA for BSX19 for BSX20

10 13

ns ns

• Pulsed: pulse duration = 300IlS, duty cycle = 1%

214

220

•• See test circuit.

5 6

BSX19-BSX20 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter

Test Conditions

Turn-on Time

ton

Turn-off Time

toff

Vee = 3 V

le=10mA IBI =3 mA

Vee = 3 V IB2 =-1.5 mA for BSX19 for BSX20 Vee = 6 V IB2 =- 20 mA for BSX19 for BSX20

le=100mA IBI =40 mA


--

hFE=lO

~

I

0.2

,

O.t

0.8

....

-

';0;;;;.

ns

15 18

ns ns

18 21

ns ns

~L

~~~L

H--++r-.~--f"'k::-t~

r-.

-50

SOmA

H-++-H-+-+-I-+-+-+-I-+-+-+-I

-100

DC Current Gain.

-SO

0

50

100

ISO

200

Tj (OC)

DC Current Gain (for BSX19 only). 6--191,5

80

VCE '" IV

G 1941

II II

..,

..........

100

BSX20

80

60

...... 1--'

60

VCE

I I.. IV

I I

I I I I ,

, I

I

I

I

I

i

~

!£S'

,

i

/1'c;lO ... -

I

BSX19

20

./

10-1

10

...

.k i::::: ~

-rI

-50

IC(mA)

50

I

i i

I i)

I

I

I

00

20

i-

,<:=100 mA

0.6H-+-H-+

0~2

-100

7

hFE =10

y ......

,-

i_

ns

I I I

(V)

-

~ Ic=1OOmA i Iso:: 1 I

12

I

I

,

Unit

1.2 H-++-H-+-+-I-+-+-+-I-+-+-+-I

I

r--- r--- -

~-

i

I

0.0

Max.

Vee = 6 V

VBE(sat)

(v)

0.5

Typ.


VCE(sat )

0.3

Min.

le=10mA IBI =3mA le=100mA IB1=40mA

./

.....

-100

~A

J....

IlOOmA

I I I I 150

1) ("C)

;;:

Gi SGS-THOMSON ~I IiIiIU©IIl@rn~Im1i'IIl@INIUCii

3/4

221

BSX19-BSX20 DC Current Gain (for BSX20 only).

250

H-+

I II I I , i ,,i

VeE elV

200

150

100

50

I

t

!

1

+

I

- ! i ,

:

i......r--'

i ....;....: '"t"

i

i

I

-

-50

H-


I

'T (MHz ) -~

I I

i I

800

I

VCE =lOV

I

;

BSX20

I

,i

600

r' 0,=10m~

/,

I

I I

r- t-- t--

IV

J......l.--1 i 100mAj-

200

I I I I I 50

100

10

20

Test circuit forts.

·A·

O.l,uF

890

n

PULSE GENERATOR VINtr
SOURCE·IMPEOANCE=50Jl

PW.:!S lOOn!> DC < 2°,.

4/4

222

l"""-

BSX19

I

......r!50mA

i

400

.......j ~ ~

V

:"~l~'"'" ,.,Z IN =501\

I.:::: lns.

1-----+--'--11

'0

BSX26 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for switching applications up to 500 mAo

TO-18


c B

E


Parameter

= 0)

VCBO


VCES


VCEO


VEBO


Ic Ptot

T stg , Tj

= 0)

= 0)

= 0)

Value

Unit

40

V

40

V

15

V

4

V

Collector Current

500

mA

Total Power Dissipation at T amb " 25°C at Tease" 25°C at Tease" 100 °C

0.36 1.2 0.68

W W W

- 65 to 200

°C


November 1988

1/4

223

BSX26 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

146 486


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.5 15

IlA IlA


VCE =20 V VeE =20 V

V(BR)CSO


Ic = 100

IlA

40

V

V(SR)CES


Ic=1001lA

40

V

V(SR)CEO *


le=10mA

15

V

V(SR)EBO


IE = 100

IlA

4

V

VeE(sa!) *


Ie = 30 mA Ic = 100 mA Ic = 300 mA Ic = 30 mA T amb = 85°C

Is Is IB Is

VBE(sa!) *


Ic = 30 mA Ie = 100 mA Ie = 300 mA

Is = 3 mA Is = 10 mA Is = 30 mA

0.75

DC Current Gain

Ie = 30 mA le=100mA Ie = 300 mA

VeE =0.4 V VCE =0.5 V VCE = 1 V


Ic =30 mA 1= 100 MHz

VCE=10V

CESO


Ic = 0 1=1 MHz

VES = 0.5 V

Ccso


IE = 0 1=1 MHz

Vcs = 5 V

ts

Storage Time

Ie = 10 mA Vee =10V IS1 =-ls2 = 10 mA

ton **

Turn-on Time

Ie = 300 mA IB1 = 30 mA

Vce = 15 V

toff **

Turn-oil Time

Ie = 300 mA Vcc = 15 V IS1 =-ls2 =30 mA

ICES

hFE *

IT

• Pulsed: pulse duration =

2/4 224

300~s,

duty cycle = 1%

T amb = 85°C

= = = =

0.16 0.18 0.39

0.18 0.28 0.5

V V V

0.18

0.3

V

0.82 0.97 1.3

0.95 1.2 1.7

V V V

30 25 15

60 55

120

350

550

3 mA 10 mA 30 mA 3 mA

.. See test circuit.

MHz

6.5

8

pF

3.3

5

pF

8

18

ns

9

15

ns

15

25

ns

BSX26 Collector-emitter Saturation Voltage.

DC Current Gain.

!

VCE(sat ) (V)

Ie =101e

80

0.8

60

II i ;

I

!

!

I

f--i

0.6

I

I II

i! !

'/~

~' I i

40

0.4

20

0.2

iN

i

I ~.,.c}')

.+

"" ,,"

'<.:«'~c..

10


,

,

Ie

6'

(rnA)


G. 30 5

VBE(sat )

Ie

(V)

=10,18

,,

1.6

i i

1.2

0.8

I ! I

Ii! I!

:I

I

I

I

I ,I Ii ' 'I I!

11I1

I,~~~ -J-f-~

!

!h

II II i i / i'

i

/ ' '/

V

,

i!

j

11

I I

I

i

,II II

0.4

It 10

, 5'

!I

10.'

, Ie 6' (rnA)

Contours of Constant Transition Frequency.

Switching Characteristics. G-3079

I

I

(ns)

I

I !

I

I! I!!

!,

II

'co ,o. ,., o-lo.'.2 ~ VCc.=1SV

II

30

~ !

25

c""-

20

:-.... .........

15

10

I

I

--10.

i

"

"'

~ 1'-.,'

Is Ir I

b

'"--- Id

, 6'

10.'

, Ie 6' (rnA)

3/4

225

BSX26 Test circuit for ton, tofl.

0.1 ,.u F

::r:

J: 0.05jJF 33.1l ---CVOUT

5- 4620

PULSE GENERATOR:

TO OSCILLOSCOPE:

Ir, If < 1.0ns

Ir< 1.0ns

PW~240ns

ZIN=

ZIN =

4/4

226

500

100KO

BSX28 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX28 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high speed saturated switching applications.

TO-18


c B

E


Parameter

= 0)

VCBO


VCES


VCEO


VEBO Ic P tot

T stg , T j

= 0)

= 0)

= 0)

Value

Unit

30

V

30

V

12

V

4.5

V

Collector Current

500

rnA

Total Power Dissipation at T amb ,; 25°C at T case'; 25°C at T case ,; 100°C

0.36 1.2 0.68

W W W DC



November 1988

- 65 to 200

1/3

227


146 486

Max Max


Parameter

Test Conditions


ICES

VCE =20 V VCE =20 V

Min.

Typ.

T amb = 85°C

Max.

Unit

0.4 10

flA flA

V(SR)CSO


Ic=10flA

30

V

V(SR)CES


Ic=10flA

30

V


Ic = 10 mA

12

V


IE = 100 flA

4.5

V

V(SR)CEO

.

V(SR)ESO VCE(sat)

.


Ic=10mA Ic = 30 mA Ic=100mA Ic = 10 mA T amb = 85°C

Is = 1 mA Is = 3 mA IB=10mA IB = 1 mA

Ic=10mA Ic =30 mA Ic=100mA


DC Current Gain

Ic = 10 mA Ic =30 mA Ic = 100 mA

VCE = 0.35 V VCE = 0.4 V VCE = 1 V


Ic = 20 mA 1= 100 MHz

VCE=10V


IE = 0 1=1 MHz

VCB = 5 V

ts

Storage Time

Ic = 10 mA Vcc=10V IB.t =-IB2=10mA

ton

Turn-on Time

Ie = 30 mA IB1 = 3 mA

toff

Turn-oIl Time

Ic =30 mA Vcc = 2 V IB1 - IB2 = 3 mA

VBE(sat)

hFE

.

IT CCBO

.



2/3

228

= 300

ms, duty cycle

= 1 %.

0.15 0.18 0.3

0.2 0.25 0.5

V V V

0.17

0.3

V

0.72

0.8 0.9 1.1

0.87 1.15 1.6

V V V

30 25 15

70 70 50

120

400

650

MHz

2.3

4

pF

6.5

13

ns

Vec = 2 V 9

15

ns

13

20

ns

BSX28 DC Current Gain.



Emitter-base and Collector-base Capacitances. e

(pF)

k-+-t-H'++HiI-

10- 1


10


10

_

10

_

102

'e lmA)

3/3

229

BSX29 SWITCH AND RF AMPLIFIER DESCRIPTION The BSX29 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for saturated and nonsaturated switching circuits requiring up to 200mA of collector current.

TO-18



Parameter

= 0)

Vcso


VCES


VCEO


VESO


Ic Ptot T stg • T j

= 0)

= 0)

= 0)

Collector Currenl Total Power Dissipation at T amb " 25°C at T case" 25°C Storage and Junction Temperature

December 1988

Value

Unit

-12

V

-12

V

-12

V

-4

V

- 200

mA

0.36 1.2

W W

- 65 to 200

°C 1/4

231


146 486

Max Max

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICES

Parameter Collector Cutoll Current (VSE = 0)

Test Conditions VCE=-6V VCE=-6V

Min.

Typ.

T amb = 85°C

Max.

Unit

- 80 -5

IlA

nA

V(SR)CSO


Ic=-101lA

-12

V

V(SR)CES


Ic=-101lA

-12

V

V(SR)CEO *


Ic=-10mA

- 12

V

V(SR)ESO


IE = - 100

-4

V

VCE(sat) *


IlA

V V V

- 0.15

- 0.4

V

-1.4

- 0.95 -1 - 1.7

V V V

Ic=-10mA Ic=-30mA Ic =- 100 mA

Is = - 1 mA Is =- 3 mA Is=-10mA

- 0.75 - 0.80

Ic =- 10 mA Ic=-30mA Ic=-100mA

VCE = - 0.3 V VCE = - 0.5 V VCE=-1V

25 30 20

50 60 40


Ic =- 30 mA 1= 100 MHz

VCE =- 10V 400

700

CESO


Ic = 0 1=1 MHz

VES =- 0.5 V

Ccso


IE = 0 1=1 MHz

Vcs=-5V

ton **

Turn-on Time

Ic =- 30 mA IS1 =- 1.5 mA

Vcc =- 2 V

toff * *

Turn-off Time

Ic =- 30 mA Vcc =- 2 V 1st = - IS2 = - 1.5 mA

hFE *

IT


DC Current Gain

* Pulsed: pulse duration = 300[1s, duty cycle = 1%. ** See test circuit.

2/4

232

1 mA 3 mA 10 mA 3 mA

- 0.15 - 0.2 - 0.5

Is Is Is Is

VSE(sat) *

====-

- 0.07 - 0.1 - 0.25

Ic=-10mA Ic =-30 mA Ic =-100 mA Ic =-30 mA T amb = 85°C

120

MHz

3.8

6

pF

3.3

6

pF

25

60

ns

35

90

ns



'05

Hi-t+..HWf- -t--t-ttttttl----t-H-tM1t-

90

t-H-H++Ht-+J-I'Htt++--+-+-"'i.H+lf

60 h~f-Itti#---+

30

15 r-1-+1tt~lt---++-t++~++++++l1f--l+f++++!l 1(r2'-':--'-c~~+-"+'-''!'L-+-.l....j-l!-ijlL-!....l..!-'-!'!" 10.'


ii 'I

(V)

-le=-'018

iT .s r---cI'

I

2

10-1

!

:


r-rT"'IIn1'T'm-.....:G;:. ~'I~'Il,,2

-vOE(saur-"rrrnrrr-TTT,TT I, m.

ill

:

II

'r'lljlr---t-t-tt+,I. -+-+-llcttHtt:! -I ! I ~'" I -H~~-HtrHtIt-H-!+H# if-- fr-f-++t+t++JH tttt:,

III

lilli

468

2

II II) II· I

468

1

2

(, 68

Ilil

2

102

10

L

68

-Ie (mA)


G-Jl0l

l.,h

II

I111

........."

~

~~

I I

r--

~~~~

r...

,

, "

..

-""IV)


G 3104

-,==.700 MHz

650

,

\

\

I

~

.1',-

I

! f-

1000

rf' ~

Iii

•

. ..

.0

'~ " tf

Ir '

~

.0-'

I

I. !

,

6

'10 2

2

'i r-tttr

,I

IIIIII . ,.

'le(mA)

., .

.0

.i'!! ,. 102

:r -IC(mA)

3/4

233

BSX29 TEST CIRCUIT Test circuit for ton, toft. VB B

V( C = -2.0V

VIN~"'F

.1'OOll $-4621

PULSE GENERATOR:

fr, :51.0ns PW= 400ns ZIN = 500

Ion VBB = + 3.0V, VIN = - 7.0V loll VBB = - 4.0V, VIN = + 6.0V

4/4 234

TO OSCILLOSCOPE: Ir :51.0ns ZIN;:' 100KO

BSX32 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX32 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is designed for high voltage, high current switching appli-

To-39


c

E


Value

Unit

VCBO


65

V

VCEO


40

V

VEBO


6

V

Collector Current

1

mA

0.8 3.5

W W

- 55 to 200

°C

Ic

Ptot T stg , T j October 1988

Parameter

Total Power Dissipation at T amb ~ 25°C at T case ~ 25°C Storage and Junction Temperature

1/4

235


Max Max

50 219



Icso

Test Conditions

Min.

VCB =50 V

Typ.

Max.

Unit

0.25

4

IlA

V(SR)CSO


Ic=1001lA

65

V

V(SR)CEO


Ic=10mA

40

V


IE = 100

IlA

6

V

.

V(SR)ESO VCE(sa!)

VSE(sa!)

hFE

.

IT

.

.



DC Current Gain

Ic=100mA Ic = 500 mA Ic = 1A

Is=10mA Is =50 mA Is = 100 mA

0.17 0.36 0.6

0.25 0.5 0.85

V V V

Ic=100mA Ic = 500 mA Ic = 1 A

Is=10mA Is =50 mA Is = 100 mA

0.8

0.9 1.5 2

V V V

Ic=10mA Ic=100mA Ic = 500 mA Ic = 1 A VCE = 1 V

VCE = 1 V VCE = 1 V VCE = 1 V VCE = 5 V Tamb = - 55°C Ic=100mA Ic =500 mA


Ic=50mA f = 100 MHz

VCE=10V

C EBO


Ic = 0 f = 1 MHz

VES = 0.5 V

CCBO


Vcs =10V

ton

..

IE = 0 f = 1 MHz

Turn-on Time

Vcc = 30 V

toff

..

Ic = 500 mA IS1 = 50 mA

Turn-off Time

Ic = 500 mA Vcc = 30 V IS1 =- IS2 =50 mA

• Pulsed: pulse duration = 300 •• See test circuit.

214

236

~s.

duty cycle = 1 % .

30 60 25 20

60 90 60 60

30 15

45 35

150

400

MHz

40

55

pF

6

10

pF

22

35

ns

40

60

ns




Collector-base Capacitance. G-3109

VBE(satl (V)

!I ,

__Jc= 101 8 -_.

-f-

~ ...

-

1.2

_f-

=-55-C

1M

0.8

0.4

(pF)

-

,

~25 'C I

V

~.

!

f-----j-

I\.

_..

'E·O

Iii " ii

[\ I

"

--- ,/ V-

.............

I

f-

Ii

I

'i

'\

Tamb

0.6

(;-)111

Cceo

0.2 1

, ,.

, 6. 10

, 10'

,.

IC(mA)

,

, , • 10

,

,

6

•

Ves(V)

3/4

237

BSX32 Test circuit for ton, toft.

Vcc= + 30V VBB =-3.8V

.9.7fl V'Nl1.0~F 62.fi 5-4618

PULSE GENERATOR:

t" II $1.0 ns PW~ 1.0~s

ZIN= 500 DC< 2%

4/4

238

TO OSCILLOSCOPE: Ir< 1.0 ns ZIN;" 100 KO

BSX33 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX33 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for high voltage and high current switching applications. It features useful current gain from 1OOJ.lA to 500mA and a low saturation voltage allowing switching operation at 1A.

TO-i8


c B

E


Value

Unit

VCBO


85

V

VCEO


55

V

VEBO


7

V

Ic Ptot T stg , Tj

Parameter

Collector Current Total Power Dissipation at T amb <; 25 'C at T case <; 25 'C Storage and Junction Temperature

December 1988

1

A

0.5 1.8

W W

- 55 to 200

"C 1/3

239

BSX33 THERMAL DATA Max Max


97 350


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

10 10

nA

10

nA


Vcs =60V Vcs = 60 V


VES = 5 V


Ic = 100 ~

85

V


Ic = 30 mA

55

V

V(BR)EBO


IE=100~

7

V

VCE(sat) *


Ic = 50 mA Ic=150mA Ic = 1 A

Is = 5 mA Is = 15 mA Is=0.1mA

0.08 0.15 0.6

0.3 1

V V V


Ic = 50 mA Ic = 150 mA Ic = 1 A

Is = 5 mA Is = 15 mA Is =0.1 mA

0.76 0.85 1.2

1.1 1.6

V V V

DC Current Gain

Ic Ie Ic Ie Ic

ICBO lEBO V(SR)CSO V(SR)CEO *

VSE(sat) *

hFE *

hIe


= 100 ~A = 10 mA = 50 mA = 150 mA = 500 mA

Ic = 1 mA

I = 1 kHz

T amb = 150 °C

VCE VCE VCE VCE VCE

=1 =1 =1 =1 =1

V V V V V

20 50 50 40 20

~A

50 85 95 80 45 85

VCE = 5 V


Ic = 50 mA 1=20 MHz

VCE=10V

CEso


Ic = a 1=1 MHz

VES = 0.5 V

50

80

pF

CCBO


Vcs=10V

12

20

pF

2

IT

IE = a

I =1 MHz hie

Input Impedance

Ic = 1 mA 1=1 kHz

VCE = 5 V

hre

Reverse Voltage Transler Ratio

Ic = 1 mA 1=1 kHz

VCE = 5 V

hoe

Output Admittance

Ic = 1 mA 1=1 kHz

VCE = 5 V

ton

Turn-on Time

Ic = 150 mA IS1 =7.5mA

Vcc = 20 V

120

200

ns

toff

Turn-all Time

Ic = 150 mA Vcc =20 V IB1 = - IB2 = 7.5 mA

350

800

ns

• Pulsed: pulse duration =

2/3 240

MHz

90

60

300~s,

duty cycle = 1%.

2.2

X

kQ 10

4

8

~s


DC Current Gain.

160

f-H-l-'+i+ll---i7'ftt+tt+f-t-H-!-Hif><

120

40

10-2

10


High Frequency Current Gain. G-

VBE(sat) (V)

'C

0

'~~~.

---t-',i I• j I! I

0.9

II

II

'iii

!

I

Ii II

.

1"1 I _lamb:; -55-<:

'

Ilj ,1' I

0.3

2

, I

I,

. 125·V

-

~'

-

4 66

2

Illillil 4 68

10- 1

ill 2

10 2

10

(CBO

V

V

,

,

i

V

-

--

t--- t-

"68

,

2

5

2

S

5 S Ie (rnA)

Collector Cutoff Current.

:t::::= leBosE~1J~uI¥G ~31n :Ve.; 60V

(nA)

,-_

'-~

-f--

V

10 2s E=:==3==E==E==:I 5_ -

'--

30

10

m

It, I II!

10

40

20

rn .i

I

'C(mA)

'E .'0

(pF)

-I. : , ! -

!

I~


~

~

7

1

'jlili i :1 II i il

'

!I

t---

1~~Z

/], l/ ,'jill'

H--mm II, ,

HI

I

-VCE,,101J

1/

,I,j

jl

,

.

j! .

-.",1;;,

-1

h,.

+ '

,

,I j i I~ 0.6 , , ..,. -I t, I;"~ f- ~t ~

Jl!

, I

rttJm ' y'

ii'

311~

-

'j_==:

2-f---r--

\

--

\

"'10

l-

20

30

25

50

75

100

3/3

241

BSX39 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX39 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for very fast switching applications up to 500 mAo

TO-18


c

E

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic P tot


Parameter

Value

Unit


45

V

20

V

5

V

Collector Current

500

mA

Total Power Dissipation at T amb ,,; 25°C at T case ,,; 25°C at T case ,,; 100°C

0.36 1.2 0.68

W W W

- 55 to 200

°C



1/4

243


146 486

Max Max


Parameter

ICES V(BR)CBO V(BR)CEO

.

V(BR)EBO VCE(sat)

.

VBE(sat)

.

hFE

.

IT CEBO CCBO ts ton toll

.. ..

VCE =20 V VCE=20V


Ie = 10


Ie = 10 mA


IE = 100

244

flA

V

!!A

5

IB = 3 mA IB=10mA IB =30 mA

DC Current Gain

Ie =30 mA Ie = 100 mA Ie =300 mA Ie =30 mA Tamb =- 55°C

V CE VCE VCE VCE


Ie = 30 mA 1= 100 MHz

VCE=10V

Ie = 0 1=1 MHz

V EB=0.5V

IE = 0 1=1 MHz

VCB = 5 V

Turn-off Time

!!A

V

Ie = 30 mA Ie = 100 mA Ie = 300 mA

Turn-on Time

Unit

0.1 30

20


Storage Time

Max.

45

IB = 3 mA IB=10mA IB =30 mA IB = 3 mA


Typ.

V

!!A

Ie = 30 mA le=100mA Ie = 300 mA Ie = 30 mA T amb = 85°C


Min.

Tamb = 125°C

Collectro-emitter Saturation Voltage

• Pulsed: pulse duration U See test circuit.

2/4

Test Conditions


=O.4V =0.5V =1V =0.4 V

0.15 0.18 0.39

0.18 0.28 0.5

V V V

0.17

0.3

V

0.75

0.8 0.9 1.1

0.95 1.2 1.7

V V V

40 25 15

60 55 40

120

12 MHz 350

600 pF 7

8

4

5

le=10mA Vcc=10V IB1 =-IB2 = 10 mA

8

18

Ie = 300 mA IBt = 30 mA

9

15

15

25

pF ns ns

Vcc = 10 V

Ie = 300 mA Vcc = 10 V IB1 - IB2 = 30 mA

= 300 J.ls, duty cycle = 1 %.

G'i :"Ifl SGS·THOMSON filliU©I!i@rnIlJ<©'ii'I!iWU©iIiI

ns


Base-emitter Saturation Voltage. G 3US

G 3124

Veelsat 1

VeElsal 1 IV 1 I

-+ +M-h+ I "

Ie ,,101e

I

0.8

, ,

II

I

i

/1/'

0.' .-

Tamb"~

0.2

Ii

,

'/)

V

I

,

IIIII

,

, Ie

10

, '--

1.2

0.8

-

0,4

I---

.

~

I

~r:;; V

'I

--

,

(mA)


-

Tam b=-5~

! !

,

I'li

!'C='O Ie

1.6

I

~c

i ii

I

!

-

I , Ii

lil

0.6

IV 1

10

,.

, Ie

10'

.\. \.. '\ 20 \.. I\, \.. 16

I I II I I ,I! I I II I

!

II

I

II II II

'" ,,;

I

e ~

• 0

"'

G 3127

CD Current Gain.

'I

lSI (mAla

,I

.-

--

, I

I

iii

:"'!

! ,

--

10'

,

I' I.

l>

..!!.- i .!!..

1-1--

Id

-

I

its:

I

'

,

I:

Tl , ,. Ie finAl

I

Ii

. I

,

I,on~i

I

I

)'

8ttC Iy ,

10 I

1/,

/

Itr=sns/

, I

-+-1"" I-"{.. I i I ["'.... I I ,I ,.

10

,

"

I

.-j" ,

,

, ,

"2----""'- ",-, '. "\..

II

Ie = 10181=-'0IB2

Iii

I

i

(mA)

Switching Characteristics. 6-3126

I

InoJ

,. I

. ill

Iii

'

.·ions./' ,

I

,

!

I

L

_f-'

~

, 10

10'

..I

Ie

(rnA)


.,

G 3129

I VeE = 10V f = 01 MHz

I I

:!

,I I 'I

I

,/

/'

I: II ,

/

, ,

, 10

, , • Ie (mA)

3/4

245

BSX39 Emitter-base and Collector-base Capacitances.

Collector Cut off Current.

G 3130

G-3131

M

c

(pFJ

['..1 , EBO Ie =0

_1+

IE=

,

4

I--

4

I

o•

r-- rt

I

I

1

Ii,

4

.,

~

=

..

;7

z

I ..~.. - -

4

,V

-

I ,.

• 6.

46'

1

10

50

VR(Yl

75

100

Test circuit for ton, toff. VCC =+10V

5- 4620

PULSE GENERATOR: Ir, If< 1.0 ns PW <: 240 ns lIN =

4/4 246

50n

V

"

,

I

CCBO

•' F VeE =20V

, I

1 I

(~A)

•,

" r--

"I

ICES

III I II!

TO OSCILLOSCOPE: Ir< 1.0 ns llN~ 100 Kn

r-

r--

BSX45 BSX46 MEDIUM POWER AMPLIFIERS DESCRIPTION The BSX45 and BSX46 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in medium power general industrial applications.

TO·39


c B

E


BSX45

BSX46

Unit

VCES


80

100

V

VCEO


40

60

V

VEBO


7

V

Collector Current

1

A

Ic 18 Ptot T st9 , Tj October 1988

Parameter

Base Current Total Power Dissipation at T case S 25 'C Storage and Junction Temperature

0.2

A

5

W

- 65 to 200

'C 1/4

247

BSX45-BSX46 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

35 200


Parameter

Test Conditions

Unit

T amb = 150°C

30 10

nA IlA

T amb = 100 DC

50

!lA

10

nA

VCE = 60 V VCE = 60 V

ICEX

Collector Cutoff Current (VBE = - 0.2 V)

VCE=60V

lEBO


VEB = 5 V

Collector-emitter Breakdown Voltage (VBE = 0 )

Ic = 100!lA


Ie = 30 mA


IE = 100 !lA


Ic = 1 A

IB =0.1 A


Ic =0.1 A Ic = 0.5 A Ic = 1 A


Ic =0.1 mA

VCE = 1 V Gr. 6 Gr. 10 Gr. 16 VCE = 1 V Gr. 6 Gr. 10 Gr. 16 VCE = 1 V Gr. 6 Gr. 10 Gr. 16 VCE = 1 V Gr. 6 Gr.10 Gr. 16

V(BR)CES

V(BR)CEO

.

V(BR)EBO

. .

VCE(sat) VBE

hFE

.

DC Current Gain

Ic = 100 mA

Ic = 500 mA

Ic = 1 A

fT CEBO

2/4 248

80 100

V V

for BSX45 for BSX46

40 60

V V

7

V

Ic = 50 mA f = 20 MHz

VCE=10V


Ic = 0 f = 1 MHz

VEB = 0.5 V

=

300115, duty cycle

=

t% .

Typ.

for BSX45 for BSX46


• Pulsed: pulse duration .. See test circuit.

Min_

Max.


ICES

0.7

1

V

1.3

1 1.5 2

V V V

0.75

10 15 25

28 40 90

40 63 100

63 100 160

15 25 35

25 40 60

100 160 250

15 20 30 50

MHz 80

pF

BSX45-BSX46 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter

Ccso


Min.

Test Conditions IE = 0 1=1 MHz

Typ.

Max.

Unit

25 20

pF pF

Vcs=10V lor BSX45 lor BSX46

NF ton toff

Ic = 1 00 ~A Rg = 1 kQ

VeE =10V 1=1 kHz

Turn-on Time

Ie = 100 mA IS1 = 5 mA

Vee = 20 V

Turn-off Time

Ie = 100 mA Vee =20 V IS1 = - IS2 = 5 mA

Noise Figure

.. ..

• Pulsed: pulse duration ** See test circuit.

300l1s, duty cycle

=

=

dB 3.5 200

ns

850

ns

1%.


Safe operating areas G-1B58

Ie ~ (A)

Ie "'fAX I-+-

rm

' I-~

""" ,'\f ~[\, 2

*REPETITIVE PULSE DUTY CYCLE = 1'It

I~

I

--1-Tease

=

01m

~~

i o.5m m, 2m,

E[

po'e

:

I ~

.......

!

10


la'

DC Current Gain. G 1870/1

! II

I! 1III

I I f--V",CE=-",'_-+V-+-++H1+--+-H-++-I-fj1 ,

II

1---+--+++++1+1---+'-+-+1-11 I'........-l r-~+HJ~J~~L~-'~, I

I

I

i

I ,

i

0.5

i

'I

10

-

I I:

-

I

BS"5>BSX46-

(v)

"

I 0.5

-

VBE(on)

I--

I

Sm.

1"

I

hFE =10

I--

----c----,--

--

Iv)

O.ln-,s

D~ ~

,

10- 1

III II I II II II

VCE(sat )

IIU

I

I 'I ' !

I I

I

I---+--+-+I-++:,I.JJ.+--H-+l+hl:--'-H-+-I1+f+H! I

I

i

'I'

I

L I

i

I

I

I I

I 10

'a'

3/4

249

BSX45-BSX46 Transition Frequency. 'r

I

I

(MHz )

I

VCE =10\1

-~

4t

I !

l

'

I

I II I, !i

,

\

~

,

7/ I, -~

,

I

I

I ! ,

i

i II

i\ I I

I

50

,

I

J

i

I

I"

I I jl i I :I!

II 'III 10

10'

i

\'

il

I ,~

~'I II

~'! -ffit!II

Ic{mA)

Test circuit for ton, toff. ~---~)-5V (V8[~)

:) +20V (Vee)

)

5-4623 PULSE GENERATOR: lp~10~s

I, $15 ns If$15ns

Zs= 500

4/4

250

TO OSCILLOSCOPE: 1,$15 ns Z'N~ 100 KO

BSX88A HIGH FREQUENCY, HIGH SPEED DESCRIPTION The BSX88A is a silicon planar epitaxial NPN transistor specially designed as high speed saturated logic switch. Itfeatures 20 Volt. VCEO, low saturation voltage and fast switching times from 10 to 300mA.

TO-39


c B

E

ABSOLUTE MAXIMUM RATINGS Parameter

Symbol Vcso


VCEO


VESO


Ic Ptot T stg , T j

= 0)

= 0)

Value

Unit

40

V

20

V

5.5

V

Collector Current

500

mA


0.36 1.2

W W

- 55 to 200

°C


November 1988

1/4

251

BSX88A THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

145 486


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.3

~

Collector Cutoll Current (VEB =0)

VCE =20 V

V(BR)CBO


Ic = 100 ~

40

V

V(BR)EBO


IE = 100 ~

5.5

V


Ic = 10 mA

20

V


Ic = 10 mA Ic = 100 mA

IB = 1 mA Is = 10 mA


Ic = 10 mA Ic = 100 mA

IB = 1 mA Is = 10 mA

0.72

0.77

DC Current Gain

Ic =0.5 mA Ic=10mA Ic = 100 mA


15 30 35

30 50 55

High Frequency Current Gain (I = 100 MHz)

Ic = 30 mA

VCE=10V

3.5

5.8

CCBO


IE = 0 1=1 MHz

Vcs =0.5 V

CEBO


Ic = 0 1=1 MHz

VEB =0.5 V

Change Storage Time Constant

Ic=IB1 =IB2=10mA

ton "

Turn-on Time

Ic=10mA VSE = - 2 V

toft "

Turn-off Time

Ic = 10 mA VBE = - 2 V

ICES

,

V(BR)CEO VCE(sat) VSE(sat)

, ,

,

hFE

hfe

ts

"

• Pulsed: pulse duration .. See test circuit.

= 300IlS, duty cycle

=

0.18 0.39

V V

0.8 1.2

V V

3

5

pF

7

8

pF

20

ns

IB1 =3 mA

30

ns

IS1 =3 mA

70

ns

1% .

DC Pulse Current Gain VS. Collector Current.

Collector Saturation Voltage VS. Collector Current.

G 4513

L.-

VeE = SV

~ec

eo

60

40

V

J I I

V I-"""""

252

Ie'" 101 8

t

1\

/

0.6

II

1\

"'- f',

/ 1/

0.4

3~

25·C

-I--.

II II 10

2/4

VCE{sat )

~

I

~ 1--":55· C

20

II

0.2

-

55"C

-

, 100

Ie (mA)

10

. , .II

100

,

.

'c(mA)

BSX88A Base Saturation Voltage vs. Collector Current.

High Frequency Current Gain vs. Collector Current. G

G 4510

I

e

t = 100MHz

I VeE'" 10V ~ l'

-

?~/ V

V / VeE :::5V V

I--~--+-_~-+-Fi~

I--f-:-I- L;-

0.8

~_f---I-"

,

125'

0.6

1-'='=-+-+-++1·+++t----t-t-H

0.4

I----+-+-f---H--t++t--- - .

0.2

1-----1--1--

V

--1+++++--+-

,0

V

l"

V

10

'00

Input and Output Capacitance vs. Reverse Bias Voltage.

LeImA)

Switching Times vs. Collector Current. G - 4508

G-4512

C (pF )

I

~ ........

"

I

j j IC:lE"O

I iii j

II

i! i I!

I ( ns )

I,

i ,: i

,s

!

!

e CBO ,

I II ii Ii

'C=10181 '" 10 '82

-

Vee= 3V

\.

I

~BO

,.......,

"-

1\ I, ,

'2

~

L

'~

_e-

Id

r--

Is

If

-

I' ,I 0.'

4511

I I

5

10

50

100

3/4

253

BSX88A TEST CIRCUITS Test circuit for ton, toff,

VOUT

FROM Mrrcury Helay

270n

"'ul~e

Sarnj.ll;nCJ

O!;.cillo~ope

Generator or ~uiyalent (Source impedance = 50.Jl., V1N Ri!:.e Time

TO LUIHdtroll

or

equiva.lent

<, n sec

~21V~,-______

+

VCC =3Vdc

ton V SB =-4Vdc

1-20 Vdc

~+-jj'0"'19:~:

V'N=-21Vp,p

VOUT 5- 4613

--'off-

Test circuit for ts,

'A'

TO OSCILLOSCOPE Z,N;SOJl.

PULSE GENERATOR YIN t r
1r~

1ns.

PW ~ lOOns. DC < 2'1. + 6Y-----.>L-

o

-4Y---

5-4614

4/4

254

toft VBB =.t-17Vdc Y,N =-20 Yp-p

BSX93 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The BSX93 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications.

TO-18


c B

E


Value

Unit

VCBO


40

V

VCES


40

V

VCEO


15

V

V EBO


5

V

150

mA

Ic

Parameter

Collector Current

ICM

Collector Peak Current (t = 10 flS)

500

mA

P tot

Total Power Dissipation at T amb S 25°C at T case S 25°C

0.36 1

W W

- 65 to 200

°C

T stg , TI


December 1988

1/4

255


Max Max

175 486


Test Conditions

Parameter

Min.

Typ.

Max.

Unit

0.2 70

~A


Vcs = 20 V Vcs =20 V

V(SR)CSO


Ic=10~A

40

V

V(SR)CES *


Ic = 1 0 ~A

40

V

V(SR)CEO *


Ic = 10 mA

15

V

V(SR)ESO

Collector-emitter Breakdown Voltage (Ie = 0)

IE = 10 ~

5

V

VCE(sa!) *


Ic = 10 mA

Is = 1 mA

Icso

T amb = 150 DC


Ie = 10 mA

VCE = 1 V


Ic = 10 mA

Is = 1 mA

DC Current Gain

Ic = 10 mA VCE = 1 V Ic = 100 mA VCE = 1 V Ic=10mA VCE = 1 V T amb = - 55 DC


Ic = 10 mA 1= 100 MHz

VCE=10V

CESO


Ic = 0 1=1 MHz

VEs = 0.5 V

Ceso


IE = 0 1=1 MHz

Ves = 5 V

ts

Storage Time

Ie = 10 mA Vee=10V IS1 =-ls 2 =10mA

ton * *

Turn-on Time

le=10mA IS1 = 3 mA

Vcc = 3 V

toff **

Turn-oIl Time

Ie = 10 mA IS1 = 3 mA

Vce = 3 V IS2 =-1.5 mA

VBE * VSE(sat) * h FE *

IT

* Pulsed: pulse duration = ** See test circuit.

2/4 256

3'00

~s,

duty cycle

=

1%

0.15

0.2

~A

V V

0.7 0.72

0.75

0.85

40 20

80 70

120

20

40

400

650

V

MHz

3.8

6

pF

2.5

4

pF

6

13

ns

9

12

ns

13

18

ns



E

II 111111

11111111 II II

nmnr

VeE= v

1D!~1

120

I I

i.,..-

10 0 I'

\

I 25"C

80

I 1 1

'17 60

'I I

0

I'\:

~55·

I-

0

10

10' lelmA)


Emitter-base and Collector-base Capacitances. G- 15

e (pF)

12~~~~~+U~~H+~-++W~

I-t

,Ii:

f--~ ~rO 111111r---. f--

Q4~

r--

IE =0

I',

1

0.2 ~ 10-1

CCBO

1ir 4 68

2

468

1

2

"68

2

102

10

46.

4 68

Ie (mA)


10

Switching Characteristics. ·36

hfe f "100MHz VeE =lOY

-

,~ [\'

......

I..-

!

-

~r

i

II I:! . :

10

./

W,_III I_ tr

I--

"" 1'-. '

6.

10

4

6 • (C(mA)

Iifi '!JI SliS·THOMSON I/jJUCII@IMI:'ii'II@1l1]U!:$

10

I 'I"

"-.if'

10'

le lmA)

3/4

257

BSX93 TEST CIRCUIT Test Circuit for ton, toff.

VIN(~_--+_31·3 Killl---.....-_t::

5011

VINtr < 1 n50

TO O~ILlOSCOPE INPUT IMPEDANCE=

SOURCE IMPEOANCE=5011

tr~ 'liS

PULSE GENERATOR

son

PW ~ JOOns. DC <2"'.

VBB=t-12V V1N =-1SV

Vss=-JV V1N::+1SV

ou'N -10~,

,-;:~'k------l0'"

VOUT

go'"

'on

4/4

258

t---------.....- - - - 4 - - - - - 4 - - - - '

.L...-+--'-l----90",

BSY53 BSY54 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in general purpose amplifiers.

TO·39


c B

E


Symbol

Value

Unit

VCBo


75

V

VCEO


30

V

VEBO Ic P tot

TS'g, T j

Emitter-base Voltage (IE = 0)

7

V

Collector Current

750

mA

Total Power Dissipation at T amb <; 25°C at T case <; 25°C

0.8 3

mW mW

- 65 to 200

'C


November 1988

1/3

259

BSY53-BSY54 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

58 220

ELECTRICAL CHARACTERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICBo lEBO VCE

(sat)

VBE

(sat)

hFE

.

. .

Parameter

Test Conditions


VCB =60 V VCB =60 V


VEB = 5 V


Ic = 150 mA Ic = 500 mA

IB=15mA 18 = 50 mA


Ic=150mA

IB = 15 mA

DC Current Gain

lor BSY53 Ic = 0.1 mA Ic = 1 mA Ic = 10 mA Ic = 150 mA Ic = 500 mA lor BSY54 Ic = 0.01 mA Ic =0.1 mA Ic = 1 mA Ic = 10 mA Ic=150mA Ic = 500 mA

Min.

Typ.

Max.

Unit

10 10

nA IlA

10

nA

0.15 0.5

0.6 1.2

V V

0.95

1.2

V

T amb = 150°C

VCE=10V VCE =10V VCE=10V VCE=10V VCE=10V VcE =10V VCE=10V VCE=10V VCE=10V VCE=10V VCE=10V

20 35 40 20 20 35 75 100 40

40 50 65 120 35 55 80 100 135 300 60


Ic = 50 mA 1= 50 MHz

VCE =10V

100

MHz

CCBO


IE = 0 1=1 MHz

VCB=10V

10

pF

CEBO


Ic = 0 1=1 MHz

VEB =0.5 V

23

pF

Noise Figure

Ic = 0.3 mA Rs = 1.5 kn VCE=10V I = 30 Hz to 15 kHz

3

IT

NF

hIe

hie


Input Impedance

hre


hoe

Output Impedance

• Pulsed: pulse duration = 300 fls, duty cycle = 1 %.

2/3

260

8

Ic = 1 mA 1=1 kHz

VCE=10V lor BSY53 lor BSY54

30 50

150 250

Ic = 1 mA 1=1 kHz


0.8 1.6

4.5 9

Ic = 1 mA 1=1 kHz

VCE=10V

Ic = 1 mA 1=1 kHz


dB

kn kn

3 X 10- 4

3.5 4.5

10 12.5

IlS IlS

BSY53-BSY54 DC Normalized Current Gain (for BSY53 only).

DC Normalized Current Gain (for BSY54 only).

1.6

1.2

F-t--t+Hl,..-!"""

0.8

0.4

10-'

10'

10

Ie (rnA)

NF VS. Collector Current

Collector-emitter Saturation Voltage. 'CE(sat)

(V I

11

:===f= !

,

I

I

I

11/

I

II

i

1/

Ii

I'

i

I

,

j! !

NF (dB)

,

I

i

10-'

t-

I

r--

/

..

10'

~

· 10-'

I I

Iii

I

10-1

,.

,1

II , ,. 1

Ie

(rnA)

y

1

10-'

It-

I

Vho • I.....

"""'"

/1

Power Rating Chart.

·· ..... f-

,i ,

Ie (mAl


i'-

~'1, .

Tam b=2S"C

I

III

,

II

I

I

t-In

Ie =lOla

I

II

I

~f~ O~Olstooc15kHzl

1

I

I

10

........

Rg =1.5kfl VeE =5 tolOV

NI

f---

II Ill!1

I

I

6------1-

"=:::::=: -

I

L

I~ -r-r-

th . -case =5S"ClW

ht.

h,.

./

hie

V VeE = IOV f =1kHz Tam b=2S·C

II

..

Ie (rnA)

~

""'I SCS-THOMSON ~~©IiiI©rn~rn©1i'IiiI©Ill~©®

40

80

120

3/3

261

I I

I I I I I

I I I

I I I

I I

I I I I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I I I

I I

I I I

I I I I

I I I

I

I I

BSY55 BSY56 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in high performance amplifier, oscillator and switching circuits,

TO·39


c B

E


Value

Unit

VCBO


120

V

VCEO


80

V

VEBO


7

V

Collector Current

500

mA

Total Power Dissipation at T amb ,,; 25°C at T case"; 25°C

0,8 3

W W

- 65 to 200

°C

Ic Ptot

T stg , Tj

Parameter


November 1988

1/3

263

BSV55-BSV56 THERMAL DATA Max Max


58 220


Parameter

Test Conditions

Collector Cutoff Current (IE = OJ

Vcs =90 V Vcs =90V


VES = 5 V

VCE (sat)'


Ic=150mA

Is=15mA

VSE (sat)'

Base-em itter Saturation Voltage

Ic = 150 mA

IB=15mA

Icso IEso

hFE

,

DC Current Gain

for BSY55 Ic =0.1 mA Ic = 1 mA Ic = 10 mA Ic = 150 mA Ic = 500 mA for BSY56 Ic=0.1mA Ic = 1 mA Ic = 10 mA Ic=150mA Ic = 500 mA

Min.

Typ.

Max.

Unit

10 10

nA

10

nA

0.2

0.6

V

1

1.3

V

T amb = 150 'C

VCE=10V VcE =10V VCE=10V VCE=10V V cE =10V VcE =10V VCE=10V VcE =10V VcE =10V VCE=10V

20 35 40

jJA

50 60 65 120 20

35 75 100

100 125 180 300 35


Ic = 50 mA f = 50 MHz

VcE =10V

100

MHz

CCBO

Collector-base CapaCitance

IE = 0 f = 1 MHz

VCB=10V

10

pF

CEBO


Ic = 0 f = 1 MHz

VEB = 0.5 V

23

pF

Noise Figure

Ic = 0.3 mA Rg = 1.5 kQ VCE=10V f = 30 Hz to 15 kHz

6

dB

fT

NF

hIe

hie


Input Impedance

264

VCE=10V for BSY55 for BSY56

30 60

150 250

Ic = 1 mA f = 1 kHz

VCE=10V for BSY55 for BSY56

0.8 1.6

5 9

hre


Ic = 1 mA f = 1 kHz

hoe

Output Admittance

Ic = 1 mA f = 1 kHz

, Pulsed: pulse duration

2/3

Ic = 1 mA f = 1 kHz

=

300 ~s, duty cycle

=

1 %.

3 X 10- 4

VCE=10V VCE=10V for BSY55 for BSY56

kQ kQ

2 3

7 10

IlS IlS

BSV55-BSV56 DC Normalized Current Gain (for BSY55 only).

DC Normalized Current Gain (for BSY56 only).


Base-emitter Saturation Voltage. (,_3207

G ]208

VCE(sat )

I V)

:--+~ f-+, H-

·

---+-H', ,, i , y : _~ ..l

I

,

·

I

. I II I ,I I I'I': I I :

V:

ll~

;

I

1/'

)(

T

i

I

,, i

,

Ie :101a Tam b=2S'C

I

I

I

I

I

: I

i

1.2

I


I !

i

-

I

~

L

'

-

Vi

, ,

I

I

I

f---

,

;

L'il i j, ,I

I

I I

,

4

Ii

I

!I." II

, L ll' , ,

j

, ,

10

I

I

,

It =101 8 Tamb =2S'C i

_+_L

0.4

II

I-"""""

I

-++

-

I! Ie (rnA)

,,

-r-

0.8 0.6

I , I

:

!

10

·· ·

"aElsatl Iv)

4

Ie (mA)

10'

Power Rating Chart. G 3205

6-3206

-;

,

~

if

Vh o•

........

,

--"::r-... "I"-

Vi

,

;

I

i

II

~ ~

th - -case =58'C/W

hr~ i- :j:

I I

,....

I

V ~

VeE = lOV

j

~hil'

,,

ia~=~~5·C i I

III

I I

I,

" 'i

I:

i

.. r

Ie (rnA)

40

80

120

160

T (Ie)

3/3

265

2N708 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N708 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for very fast switching applications.

TO-18


c B

E


Value

Unit

VCBO


40

V

VCEO


15

V

VEBO


5

V

Collector Current

200

mA

Total Power Dissipation at T amb ,; 25 'C at T case'; 25 °C

0.36 1.2

W W

- 65 to 200

°C

Ic P tot

Tstg , Tg October 1988

Parameter


1/2

267

2N708 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

146 486

Max Max


Parameter

ICBO

VcB =20V VCB =20 V


Ic = 100


T amb = 150°C

!lA

Typ.

Max.

Unit

25 15

!lA

nA V

Ic = 10 mA

15

V


IE=10~A

5

V


VEB = 4 V


Ic = 10 mA


Ic = 10 mA

DC Current Gain

Ic =0.5 mA VCE = 1 V Ic = 10 mA VCE = 1 V T amb = - 55°C Ic = 10 mA VCE = 1 V

15 30 15

-


Ic = 10 mA f = 100 MHz

VcE =10V

3

-


IE = 0 f = 1 MHz

VCB=10V

6

pF

ts

Storage Time

Ic = 10 mA Vcc = 10 V IB1 =-I B2 = 10 mA

25

ns

ton

Turn-on Time

Ic = 10 mA IB1 = 3 mA

Vcc=10V

40

ns

toll

Turn-off Time

Ic = 10 mA IB1 = 3 mA

Vcc=10V IB2 =- 1 mA

75

ns

V(BR)CEO

.

V(BR)EBO

lEBO VCE(sat) VBE(sat) hFE

.

hie CCBO

. .


268

Min.

40

V(BR)CBO

2/2

Test Conditions


100

nA

IB = 1 mA

0.4

V

IB = 1 mA

0.9

V

120

-

2N718A 2N956 AMPLIFIERS AND SWITCHES DESCRIPTION The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, intended for high-speed switching and amplifier applications.

TO-18


c B

E


Parameter

= 0)

VCBO


VCER

Collector-emitter Voltage (RBE " 1012)

VEBO


Ic Ptot T stg , Tj October 1988

= 0)

Collector Current Total Power Dissipation at T amb " 25°C at T case" 25°C Storage and Junction Temperature

Value

Unit

75

V

50

V

7

V

1

A

0.5 1.8

W W

- 65 to 200

°C 1/3

269

2N718A-2N956 THERMAL DATA 97

Max Max


350


Test Conditions

Parameter

Min.

Typ.

Max.

Unit

T amb = 150°C

10 10

~

for 2N718A for 2N956

10 5

nA nA

nA


VCB=60V VCB =60 V


VEB = 5 V

V(BR)CBO


Ic=100~

75

V

V(BR)CER *

Collector-emitter Breakdown Voltage (RBE " 100)

Ic = 10 mA

50

V

V(BR)EBO


IE = 100 ~

7

V

VCE(sa!) *


Ic = 150 mA

IB = 15 mA

0.24

1.5

V

VBE(sat) *


Ic = 150 mA

IB = 15 mA

1

1.3

V

DC Current Gain

for 2N718A Ic =0.1 mA Ic = 10 mA Ic = 150 mA Ic = 500 mA Ic = 10 mA T amb = - 55°C for 2N956 Ic = 0.01 mA Ic =0.1 mA

ICBo lEBO

hFE *


2/3 270

= 300 fls. duty cycle = t

%.

-

VCE=10V VcE =10V VCE=10V VCE=10V VCE =10V

VCE=10V VCE=10V

20 35 40 20

120

-

20

-

20 35

-

2N718A-2N956 ELECTRICAL CHARACTERISTICS (continued)

.

Symbol hFE

hfe

fT




Test Conditions for 2N956 le=10mA le=150mA Ie =500 mA Ie =10 mA T amb = - 55°C for 2N718A Ie = 1 mA Ie = 5 mA for 2N956 Ic = 1 mA Ic = 5 mA Ie =50 mA I =20 MHz

VeE=10V VeE =10V VeE=10V VeE =10V

75 100 40

Typ.

Max.

Unit -

300

-

35 VeE = 5 V VCE=10V

30 35

150 150

-

VCE = 5 V VCE=10V

50 70

300 300

-

-

VCE",10V for 2N718A lor 2N956

CEBO


Ic =0 f = 1 MHz

VEB=0.5V

CeBo


IE = 0 f = 1 MHz

VCB=10V

Noise Figure

Ic = 300 j.lA f = 1 kHz

VCE=10V

NF

Min.

for 2N718A for 2N956

MHz MHz

60 70 80

pF

25

pF

12 8

dB dB

• Pulsed: pulse duration = 300 fLs, duty cycle = 1 %.

~ SGS-ntOMSON ... .,I IlIilO©Ii@~~I<©'iI'IiI@II!OIl$

3/3

271

2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications.

TO-18


c B

E


Value

Unit

VCBO


120

V

VCEO

Collector-emitter Voltage (lR = 0)

80

V

VEBO


Ic

P tot T stg , Tj October 1988

Parameter

7

V

Collector Current

500

mA

Total Power Dissipation at T amb S 25°C at T case S 25°C

0.5 1.8

W W

- 65 to 200

°C


1/2

273

I

'"

2N720A THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

97.2 350


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

10

nA


Vcs =90 V

V(BR)CBO


Ic = 100 ~

120

V

V(SR)CEO *


Ic = 30 mA

80

V

V(BR)ESO

Emitter-base Breakdown Voltage (IE = 0)

IE= IOO fl A

7

V

Emitter Cuttoff Current (IE = 0)

VES = 5 V

VCE(sat) *


Ic = 50 mA Ic = 150 mA

VBE(sat) *


Icso

10

nA

IB = 5 mA Is=15mA

1.2 5

V V

Ic = 50 mA Ie = 150 mA

Is = 5 mA Is=15mA

0.9 1.3

V V

DC Current Gain

Ie = 100 ~ Ic=10mA Ie = 150 mA


20 35 40

120


Ic = 50 mA f = 20 MHz

VCE=10V

2.5

-

CeBo


IE = 0 f = 1 MHz

VCB=10V

15

pF

CEBO


Ic = 0 f = 1 MHz

VES = 0.5 V

85

pF

IESO

hFE *

hie


2/2 274

= 300 fls. duty cycle = 1 %.

2N914 SATURATED LOGIC SWITCH AND VHF AMPLIFIER DESCRIPTION The 2N914 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is primarily a universal switch but it is also an excellent high speed, high gain logic and memory driver at collector currents up to 500 mAo

TO-18


c B

E


Unit

VCBO


40

V

VCER

Collector-emitter Voltage (RBE " 100)

20

V

VCEO


15

V

Parameter

Symbol

VEBO Ie Ptot


5

V

Collector Current

500

mA

Total Power Dissipation at T amb " 25°C at Tease" 25°C at Tease" 100°C

0.36 1.2 0.68

W W W

- 65 to 200

°C



1/3

275

2N914 THERMAL DATA Max Max


146 486


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

T amb = 150°C

25 15

nA /-lA

T amb = 125°C

10

/-lA

100

nA


Vcs =20V Vcs =20 V

ICEX

Collector Cutoff Current (VSE = - 0.25 V)

VCE =20 V

IEso


VES = 4 V

V(SR)CSO


Ic=1/-lA

40

V

V(SR)CES

Collector-emitter Breakdown Voltage (RsE s 10 Q)

Ic = 10 mA

20

V


Ic =30 mA

15

V


IE=10/-lA

5

V


Ic = 20 mA Ic = 200 mA

IB = 2 mA Is =20 mA


Ic = 10 mA

Is = 1 mA

DC Current Gain

Ic = 10 mA VCE = 1 V Ic =500 mA VCE = 5 V Ic = 10 mA VCE = 1 V T amb = - 55°C


Ic = 20 mA f = 100 MHz

VCE=10V

CEBO


Ic = 0 f = 1 MHz

VES = 0.5 V

CCBO


IE = 0 f = 1 MHz

Vcs=10V

ts

Storage Time

Ic = 20 mA Vcc = 5 V IB1 =-l s2 =20 mA

ton

Turn-on Time

Ic = 200 mA IS1 = 40 mA

Vcc = 5 V

toll

Turn-off Time

Ic = 200 mA IB1 = 40 mA

Vcc = 5 V IS2 =- 20 mA

Icso

V(SR)CEO

.

V(SR)EBO VCE(sat) VSE(sat) hFE

.

fT

.

.


2/3

276

=

300 fls, duty cycle

=

1 %.

0.2 0.4

0.25 0.7

V V

0.7

0.74

0.8

V

30 10

55 17

120

-

12

28

-

300

370

MHz

9

pF

4.5

6

pF

13

20

ns

25

40

ns

25

40

ns

2N914 DC Current Gain.


Collector-base and Emitter-base Capacitances.


'T

,--

(MHz )1-

400

300

I-I-

.,

--

,-

---

I

-;..;.-

1-

100

-

I

I 200

-

VCE =10V

~ T

I-~Y'~:-

I I

--[-

,

\ -\ ~

-_.-

+t 10

tl 10'

3/3

277

I I I I I I I I I I I I I

I I I I

I I I I

I I


I I I I

I I I

I I I I I I I I I I I I I I I I I

I I I

I I I I

I I I I I I I I I I I I I I I I I

I I I

I I I I


I I I I I

2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.

TO-72


c

E


Value

Unit

VCBO


30

V

VCEO


15

V

VEBO


3

V

Collector Current

50

mA

Total Power Dissipation at T amb <; 25 'C at T case <; 25 'C

200 300

mW mW

- 65 to 200

'C

Ic

Ptot T stg , T j January 1989

Parameter


1/4

279



584 875


Parameter

Test Conditions

Typ.

Max.

Unit

10 1

nA flA

V CB = 15 V VCB = 15 V

V(BR)CBO


Ie = 1 flA

30

V

VCEO(sus)


Ic = 3 mA

15

V

V(BR)EBO


IE = 10 flA

3

V

VCE(sa!)


Ic = 10mA

IB = 1 mA

0.4

V

VBE(sa!)


Ie = 10 mA

IB = 1 mA

1

V

Tamb = 150°C

DC Current Gain

Ic = 3 mA

VCE = 1 V

20

50


Ic = 4 mA 1=100MHz

VCE=10V

600

900

CEBO


Ic = 0 1=1 MHz

VEB = 0.5 V

CCBO


IE = 0

1= 1 MHz VCE = 0 VCE=10V

hFE

IT

pF

3 1.7

pF pF

6

dB

Ic = 1 mA Rg = 400 Q

VCE = 6 V 1= 60 MHz

G pe

Power Gain

Rg = 50

1= 200 MHz VCE = 12V

15

21

dB

Po'

Output Power

Ic = 12 mA 1= 500 MHz

VCB = 10V

30

40

mW

Collector Efficiency

Ic = 12 mA 1= 500 MHz

VCB=10V

See test circuit.

280

MHz 2

Noise Figure

11

2/4

1.8 1

-

NF

Q

Ic = 6 mA

*

Min.


ICBo

25

%


Transition Frequency. r-r-,..,-,-r-r--,,--,-r-r--,,--·TTl

IT

1J

0.5

10

Input Admittance vs. Collector Current.

20

Forward Transadmittance vs. Collector Current. G 2046

I

I

-

-

_L 1=100 MHz

'=10'MHz

80

,./ VCE =5V

b~OV VCE~

~~

........ 60

P'

_I-"'

./

V

,./

10V

VCE =5V 10V

Y. '/

'/

20

o~

~V

A ~

'0

V

L_ V" ~ VJ../ VCE·~

-b

._-

Reverse Transadmittance vs. Collector Current.

Output Admittance vs. Collector Current.

I t=100MHz

1.6

--

CE

<

1.2

f-100MHz

V

5V

0.4

-

;,

~

IOV

0.8

-g

:5V

.e:; ~

;..0-

--

-

VCE =5V

,_

IOV - -

3/4

281

2N918 Forward Transadmittance vs. Frequency.

Input Admittance vs. Frequency. V11e (mS)

~--l-H---H~~-+-

I---+-+--' II_IH'-f-H 111ft------'_'--'-I-i-I_till ~--l_~---Hi-t+lit+:!--=---:---"--,--,-t'+:+-+1 I

V21 •

~--l-;'-+---H

(mS)

I,

1.1"--+---;--,++-++1-+1 ~~:::~

100

l'

80

"

i: !"-!

II

::

1

:

; : :

: I I I!: I

! I!

I

IS

r-- _-,-__;.J XU

'0

10

i

7-

1,11

I

o

10

f(MHz)

Reverse Transadmittance vs. Frequency.

""-,

:

I"

;~Jl 11' i i~

I

I

-20

10'

:

:=-- --FIt:

20

10

' :I!I

Ii ~ I~! , iii; Ii " , ' TN

, - - - - - - , - '..--::::'

f (MHz)

10'

Output Admittance vs. Frequency.

(;-2049

V12 • (mS)

f--+-II_HI_If-t'++ ! It.---::,,-:::,;--Il'i,-W,,-t JJJ, , i ' .lI'c=5mA : I' ;

I

)

Ic=5mA

i IIVCE 'oIov ! ! i : I i i ' ,j

i

i i i I! I,

I!

I II

,,!

11:

!i

J 1/

I

J

!

II,

/

/' , 10

10'

10'

10

f (MHz)

5~

+-_Q+-... r+_-+-_7....

1000 pF

I 282

OUT

11000

RFC

IPF

5-1570

Gi SGS-THOMSON ~I ffiiJOClRl@lru!.mIC1I'lI@!I!O@$

I

.

gj ! I ,

fo,

500 MHz Oscillator Test Circuit.

4/4

I I:

VCE "'10V

f (MHz)

2N930 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise amplifier applications.

TO·18


c B

E


Parameter

VCBO


=

0)

VCEO


=

VEBO


Ic Ptot T stg , Ti October 1988

=

0)

0)

Collector Current Total Power Dissipation at T amb at T case

25 "C = 25°C

=


Value

Unit

45

V

45

V

5

V

30

mA

0.3 0.6

W W

- 55 to 200

"C 1/2

283

2N930 THERMAL DATA 292 583

Max Max



Parameter

Min_

Test Conditions

Typ_

Max.

Unit

10

nA

10 10

nA f(A

VCE = 5 V

2

nA

Emitter Cutoff Current (lc = 0)

VEB = 5 V

10

nA

V(SR)CEO *


Ic = 10 mA

45

V

V(BR)ESO


IE = 10 nA

5

V

VCE(sa!) *

Collector-emitter Sustaining Voltage

Ic = 10 mA

ICBo


VcB =45V

ICES


VCE =45 V VCE=45V

ICEO

Collector Cutoff Current (Is = 0)

lEBO

Tamb = 150°C

IB =0.5 mA

1

V

VSE *


Ic = 10 mA

Is =0.5 mA

0.6

1

V

hFE *

DC Current Gain

Ic=10f(A Ic =0.5 mA Ic=10mA Ic=10f(A Tamb =- 55°C

VCE VCE VCE VCE

100 150

300

-


Ic = 1 mA f = 1 kHz

VCE = 5 V


Ic =0.5 mA f = 30 MHz

VCE = 5 V


IE = 0 f = 1 MHz

Vcs = 5 V

Noise Figure

Ic=10f(A f = 1 kHz

VCE = 5 V Rg = 10 kQ

hfe

fT CCBO NF

* Pu Ised : pulse duration

2/2

284

= 300 Ils. duty cycle = 1%

= = = =

5 5 5 5

V V V V

600

-

20 150

600

MHz

30

8

pF

3

dB

2N1613 2N1711 SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier. oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. ~ Products approved to CECC 50002-104 avai-

lable on request. TO-39


c B""

I I.....

E


Symbol Vcso


VCER

Collector-emitter Voltage (RSE

VESO


Ic Ptot

T stg • Tj January 1989

$;

100)

Unit

75

V

50

V

7

V

500

rnA

$;

0.8

$;

3 1.7

W W W

- 65 to 200

°C

Collector Current Total Power Dissipation at T amb at T case at T case

Value

25°C 25°C $; 100°C


1/3

285

2N1613-2N1711 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

58 219

Max Max


Parameter

ICBo lEBo V(BR) CBO V(BR)CER

·

V(BR) EBO VCE (sat)

·

VBE (sat)

·

hFE

hFE

.

.

hIe

It

Test Conditions


VCB = 60 V VCB = 60 V


VEB = 5 V

Min.

Typ.

Max.

Unit

T amb = 150°C

10 10

nA j.lA

lor 2N1613 lor 2N1711

10 5

nA nA

Collector-base Breakdown Ic =0.1 mA Voltage

75

V

Collector-emitter Breakdown Voltage (RBE ~ 100)

Ic = 10 mA

50

V

Emitter-base .Breakdown Voltage (Ic = 0)

IE = 0.1 mA

7

V


Ic = 150 mA

IB = 15 mA

0.5

1.5

V


Ic = 150 mA

IB = 15 mA

0.95

1.3

V

lor 2N1613 Ic = 0.Q1 mA Ic =0.1 mA Ic=10mA Ic = 150 mA Ic = 500 mA Ic = 10 mA Tamb =-55 °C

VCE=10V VCE=10V VCE=10V VCE=10V VcE =10V VCE=10V

lor 2N1711 Ic = 0.01 mA Ic =0.1 mA Ic = 10 mA Ic=150mA Ic = 500 mA Ic = 10 mA T amb = 55°C

VCE=10V VCE=10V VcE =10V VCE=10V VCE=10V VCE=10V

DC Current Gain

DC Current Gain

Small Signal Current Gain lor 2N1613 Ic = 1 mA 1=1 kHz lor 2N1711 Ic = 1 mA 1=1 kHz Transition Frequency

Ic =50 mA 1= 20 MHz

20 35 40 20

35 50 80 80 55

20

35

20 35

60 80 130 130 75

120

300

65 VCE=10V 30

70

150

70

135

300

60 70

80 100

VCE=10V VCE=10V lor 2N1613 lor 2N1711

MHz MHz

CEBO


Ic = 0 1=1 MHz

VEB = 0.5 V

50

80

pF

CCBO


IE = 0 1=1 MHz

VCB=10V

18

25

pF

• Pulsed: pulse duration = 300 f!S, duty cycle

2/3

286

= 1 %.

2N1613-2N1711 ELECTRICAL CHARACTERISTICS (continued) Symbol NF

hie

h re

hoe

Parameter Noise Figure

Input Impedance


Output Admittance

Test Conditions

Typ.

Max.

Unit

VCE=10V f = 1 kHz for 2N1613 for2N1711

6 3.5

12 8

dB dB

Ic = 1 mA f = 1 KHz

VCE = 5 V for2N1613 for2N1711

2.2 4.4

Ic = 1 mA f = 1 kHz

VCE = 5 V for 2N1613 for2N1711

3.6x10- 4 7.3x10- 4

Ie = 1 mA f = 1 kHz

VeE = 5 V for 2N1613 for 2N1711

12.5 23.8

Ic = 0.3 mA R g =5100

Min.

kQ kO

~S ~S

• Pulsed: pulse duration = 300 Ils, duty cycle = 1 %.

3/3

287

2N1893 GENERAL PURPOSE HIGH-VOLTAGE TYPE DESCRIPTION The 2N 1893 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V cOllector-to-base voltage rating.

e

Products approved to CECC 50002-104 available on request. TO-39


c B

E


Symbol VCBO


VCER

Collector-emitter Voltage (RBE

VCEo


VEBO


Ic Ptot

T stg , Tj October 1988

S;

10 Q)

Value

Unit

120

V

100

V

80

V

7

V

Collector Current

0.5

A

Total Power Dissipation at T amb ~ 25°C at T case S; 25°C at T case ~ 100°C

0.8 3 1.7

W W W

- 65 to 200

°C


1/3

289



58 219


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

10 15

nA ~

10

nA


VCB =90 V VCB = 90 V


VEB = 5 V

V(BR) cso


Ic = 100 ~A

120

V

V(SR)CER *

Collector-emitter Breakdown Voltage (RsE ,; 10 0)

Ic = 10 mA

100

V

V(SR)CEO


Ic = 10 mA

80

V

V(SR) ESO


IE = 100 ~

7

V


Ic =50 mA Ic=150mA

Is = 5 mA Is = 15 mA


Ic =50 mA Ic=150mA

Is = 5 mA Is = 15 mA

DC Current Gain

Ic =0.1 mA Ic=10mA Ic = 150 mA Ic = 10 mA T amb = - 55°C

VCE=10V VCE=10V VCE=10V VCE=10V

Ic = 1 mA 1=1 kHz Ic = 5 mA 1=1 kHz

VCE = 5 V

Icso lEBO

VCE VSE

(sat) *

(sat)

hFE *

hIe

*


T amb = 150°C

1.2 5

V V

0.82 0.96

0.9 1.3

V V

20 35 40

50 80 80

120

20

40

30

70

45

85

50

70

150

VCE=10V


Ic = 50 mA 1=20 MHz

VCE=10V

CESO


Ic = 0 1=1 MHz

VES = 0.5 V

55

85

pF

CCBO


IE = 0 1=1 MHz

Vcs =10V

13

15

pF

IT

* Pulsed: pulse duration

2/3

290

= 300 !,S, duty cycle = 1 %.

MHz

2N1893 DC Current Gain. 11111111 VeE

= lOV I I

160

140

,11111 I,

JI

'i l ", 150·C

,Wi III,

1II

"',

60

I

40

~

"

I'

I ; -55-C

')'

i

;;

I!i

rrm

i

11 10

I I II VeE= 15V

I---

I--VCE ,10V

veE = sv I I

:::1

11::1 "

I':,

IIIII!I I II :~ i

1001 C(mAl

A ~~ ~

lI-~

I;]

, ~i';

,j

,

'~OMIH~ I

',I

!

'II'

I

t

I,

:lUI~,'" ,1'1,1 'I~, 101 1,1;1

eo

G-452J

1111:1

I!!:

II::!

1',1

I 1m ,;jj? or JIffiI 1 ';! ,,'i' ill! I::"~ 11",,' I '~ 'iii ~ I "fi j' r " It- fm FTI Iii

100

,I iii,,

ffiiI TIillil 1,0~

120

'0

High-frequency Current Gain. 6-'52

A

~

~ 10

3/3

291

I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

2N2102 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N21 02 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signal and medium power applications in military and industrial equipments.

TO·39


c

E


Parameter ~

VCBo


VCEo

Collector-emitter Voltage (lB

~

0)

VCER

Collector-emitter Voltage (RBE

0:;

V EBO


Ic P tot T stg • Tj January 1989

~

0) 10 Q)

Value

Unit

120

V

65

V

80

V

7

V

Collector Current

1

A

Total Power Dissipation at T amb <; 25°C at T case <; 25°C

1 5

W W

- 65 to 200

DC

0)


1/2

293



Parameter

35 175

Max Max

=

25 "C unless otherwise specified)

Test Conditions

Min_

Typ-

Max.

Unit

2 2

~A

5

nA


Vcs =60 V Vcs =60 V


VES = 5 V


Ic = 100 ~

120

V

(sus)

Collector-emitter Sustaining Voltage (Is = 0)

Ic = 30 mA

65

V

V CE

(sat)


Ic=150mA

Is = 15 mA

0.5

V

VSE

(sat)


Ic = 150 mA

Is = 15 mA

1.1

V

DC Current Gain

Ic=10~A

VCE=10V VCE=10V VCE = 10 V VCE =10V VCE=10V VCE=10V

ICBO lEBO V(SR) cso VCEO

hFE

.

. . .

Ic=100~A

Ic=10mA Ic=150mA Ic = 500 mA Ic = 1 A hie


Ic = 50 mA 1= 20 MHz

NF

Noise Figure

Ic = 300 ~A BW = 1 Hz

T amb = 150°C

VCE=10V

10 20 35 40 25 10

nA

120

6

VCE =10V 1=1 KHz RG=510Q

8

dB

Ccso


IE = 0 1=1 MHz

Vcs=10V

15

pF

CEso


Ic = 0 1=1 MHz

VEs=0.5V

80

pF

• Pulsed: pulse duration = 300 ~s, duty cycle

2/2

294

= 1 %.

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. ~

2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request.

TO·39

TO·18


c B

E


Value

Unit

VeBo


60

V

VCEO


30

V

VEBO


5

V

0.8

A

2N2219 2N2222

0.8 0.5

W W

2N2219 2N2222

3 1.8

W W

Ie Ptot

Parameter

Collector Current Total Power Dissipation at T amb " 25 DC for 2N2218 and for 2N2221 and at T case" 25 DC for 2N2218 and for 2N2221 and

T stg

Storage Temperature

- 65 to 200

°C

TJ


175

°C

January 1989

1/2

295

2N2218-2N2219-2N2221-2N2222 THERMAL. DATA



Max Max


2N2218 2N2219

2N2221 2N2222

50°C/W 187.5 °C/W

83_3°C/W 300°C/W


Symbol

Test Conditions

Min.

Typ.

Max.

Unit

10 10

nA

10

nA

Collector Cutoff Current (IE ~ 0)

Vcs ~50 V Vcs ~ 50 V

Emitter Cutoff Current (Ic ~ 0)

VES ~ 3 V

Coillector-base Breakdown Voltage (IE ~ 0)

Ic~10~A

60

V

Collector-emitter Breakdown Voltage (Is ~ 0)

le~10mA

30

V

V(SR) ESO

IE ~10 ~

5

V

VeE (sat)

.

Emittter-base Breakdown Voltage (Ic ~ 0)

Ie ~ 150 mA Ie ~ 500 mA

Is Is

15 mA 50 mA

OA 1_6

V V

V SE (sat)

.


Ie ~ 150 mA Ie ~ 500 mA

Is ~ 15 mA Is ~ 50 mA

1_3 2_6

V V

DC Current Gain

for2N2218 and 2N2221 Ic ~0_1 mA VeE~10V Ie ~ 1 mA VeE~10V Ie ~ 10 mA VeE~10V VeE~10V Ie = 150 mA Ie ~ 500 mA VeE~10V VeE ~ 1 V Ie ~ 150 mA for 2N2219 and 2N2222

Icso IEso V(SR) cso V(SR)eEO

hFE *

.

T amb ~ 150°C

~ ~

le~0_1mA

VeE~10V

Ie ~ 1 mA Ie ~ 10 mA Ie ~ 150 mA Ie = 500 mA

VCE~10V

le~150mA

20 25 35 40 20 20

VeE=10V VeE ~ 1 V

35 50 75 100 30 50 250

VeE~10V VeE~10V

~A

120

300


Ie ~ 20 mA f ~ 100 MHz

VCE ~20 V

Ceso


IE ~ 0 f ~ 100 kHz

Ves~10V

8

pF

Re(hie)

Real Part of Input Impedance

Ie ~ 20 mA f ~ 300 MHz

VeE ~ 20 V

60

Q

fT

• Pulsed: pulse duration = 300 I-ls, duty cycle

2/2

296

=

1 %_

MHz

2N2218A-2N2219A 2N2221 A-2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2218A, 2N2219A, 2N2221 A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221 A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.

G

2N2218A/2N2219A approved to CECC 50002-100, 2N2221 A/2N2222A approved to CECC 50002-101 available on request.

TO-39

TO-18


c

E


Symbol

= 0)

Vcso

Collector-base Voltage (I E

VCEO


VEBO


Ic P tot

= 0)

= 0)

Unit

75

V

40

V

6

V

0.8

A

2N2219A 2N2222A

0.8 0.5

W W

2N2219A 2N2222A

3 1.8

W W

Collector Current Total Power Dissipation at T amb ,; 25 'C for 2N2218A and for 2N2221 A and at T case'; 25°C for 2N2218A and for 2N2221 A and

Value

T stg

Storage Temperature

- 65 to 200

°C

Tj


175

DC

January 1989

1/5

297

I.

2N2218A-2N2219A-2N2221 A-2N2222A THERMAL DATA


I

Max Max


2N2218A 2N2219A

2N2221 A 2N2222A

50°C/W 187.5°C/W

83.3°C/W 300°C/W


Parameter

Test Conditions

Max.

Unit

10 10

nA flA

VCE =60V

10

nA


V ES = 3 V

10

nA

Base Cutoff Current (VSE =- 3 V)

VCE = 60 V

20

nA

V(SR) cso


Ic=10flA

75

V

V(SR) CEO


Ic = 10 mA

40

V


IE=10flA

6

V


Ic = 150 mA Ic = 500 mA

Is = 15 mA Is = 50 mA


Ic = 150 mA Ic = 500 mA

Is=15mA Is = 50 mA

DC Current Gain

for 2N2218A and 2N2221 A Ic =0_1 mA VcE =10V Ic = 1 mA VCE=10V Ic=10mA VCE=10V Ic = 150 mA VcE =10V Ic = 500 mA VCE=10V Ic = 150 mA VCE = 1 V Ic=10mA VCE=10V T amb = - 55°C


Vcs =60 V Vcs =60 V

ICEx

Collector Cutoff Current (VSE =- 3 V)

IEso ISEx

Icso

.

V(SR) ESQ V CE (sat) V SE (sat) hFE

hFE

.

.

. .

DC Current Gain

• Pulsed: pulse duration = 300 ~s. duty cycle = 1 %.

2/5

298

Min.

T amb = 150°C

for 2N2219A and 2N2222A Ic =0.1 mA VCE=10V Ic = 1 mA VCE=10V VCE=10V Ic = 10 mA Ic=150mA VCE=10V Ic = 500 mA VCE=10V Ic = 150 mA VCE = 1 V Ic = 10 mA VCE=10V T amb = - 55°C

0.6

20 25 35 40 25 20

Typ.

0.3 1

V V

1.2 2

V V

120

15 35 50 75 100 40 50 35

300

2N2218A-2N2219A-2N2221 A-2N2222A ELECTRICAL CHARACTERISTICS (continued) Symbol hie

fT

Parameter Small Signal Current Gain


Test Conditions Ic = 1 mA f = 1 kHz for 2N2218A for 2N2219A Ic = 10 mA f = 1 kHz for 2N2218A for 2N2219A

Min.

Typ.

Max.

Unit

VCE=10V and 2N2221 A and 2N2222A VCE=10V

30 50

150 300

and 2N2221 A and 2N2222A

50 75

300 375

Ic =20 mA VCE =20 V f=100MHz for 2N2218A and 2N2221 A for 2N2219A and 2N2222A

MHz MHz

250 300

CEBO


Ic = 0 f = 100 kHz

VEB = 0.5 V

25

pF

CCBO


IE = 0 f = 100 kHz

VCB=10V

8

pF

Relhie)

Real Part of Input Impedance

Ic = 20 mA f = 300 MHz

VCE = 20 V

60

Q

Noise Figure

Ic = 100 IlA Rg = 1 kQ

VCE=10V f = 1 kHz

Input Impedance

Ic = 1 mA for 2N2218A for 2N2219A Ic = 10 mA for 2N2218A for 2N2219A

VCE=10V and 2N2221 A and 2N2222A VCE=10V and 2N2221 A and 2N2222A


VCE=10V and 2N2221 A and 2N2222A VcE =10V and 2N2221 A and 2N2222A


VcE =10V and 2N2221 A and 2N2222A VcE =10V and 2N2221 A and 2N2222A

NF hie '*

hre '*

hoe ' ,


Output Admittance

4

dB

1 2

3.5 8

Q Q

0.2 0.25

1 1.25

Q

n

5x10- 4 8x10- 4 2.5x10- 4 4x10- 4 3 5

15 35

IlS IlS

10 25

100 200

IlS IlS

td'"

Delay Time

Ic = 150 mA IB1 =15mA

Vcc =30 V VBB =- 0.5 V

10

ns

tr ***

Rise Time

Ic = 150 mA IB1 = 15 mA

Vcc =30 V VBB = - 0.5 V

25

ns

ts ***

Storage Time

Ic = 150 mA Vcc = 30 V IB1 =-IB2 = 15 mA

225

ns

tf***

Fall Time

Ic = 150 mA Vcc =30 V IB1 =- IB2 = 15 mA

60

ns


Ic = 20 mA f =31.8 MHz

150

ps

rbb'Cb,c

VCE = 20 V

.. f = 1 kHz *** see test circuit.

3/5

299

2N2218A-2N2219A-2N2221 A-2N2222A Normalized DC Current Gain.

Collector-emitter Saturation Voltage. VCE(satl (V)

0.2

10

0.1

100

Contours of Constant Narrow Band Noise Figure. RS (.G.)

Switching Time I (ns )

adS

• f--

-

,

I

"

---.;t

=1 KHz

1"'\.,

!

,'-.,J. 1\.1

11 :

10

~

...

-

,i

i'...SdB

~~

300

-

Vee :15,1,1

I

. ~

t--.

-1

,i i

1m

10

,:s: ~~

,I--- I---~ -- _.

. ,

100 L..........J'--'L..!-L>Lll.l.L_-'-....L...l...J.J....l.l.L 0.01

Is

,~ b - I f

i

500

"

,I-.

,

1\ ,

•

IC;'0IB,~101~.

+

1+

I 'i!

·~1'..,---+--"I.!',.~4LJdB++i4- ·-1 t~,

4/5

vs. Collector Current.

I':::

SdB

lK

10

G - 1,527

,

5K

0.1

IC(mA)

0.1

10

I

..

--

:-+-H- I • ;

,

I

f--

,

I,

V,

I

ft

I 100

! I

, I·

II 11

2N2218A-2N2219A-2N2221 A-2N2222A Test Circuit fat td, tr.

VBB=-0.5 V

VCC=~30V

10Kfi

+-1O.4Tl

o

V'Nl

VOUT

0.47}JF

61911

5011

5-4624 PULSE GENERATOR: tr ::;20 ns

TO OSCILLOSCOPE: tr$5.0ns Z'N < 100 Kn C'N,,12pF

PW,,200 ns Z'N~50n

Test Ci rcu it fat td,

tr

Vss= -23.8V

s-

4625 PULSE GENERATOR: PW. 10 IlS

TO OSCILLOSCOPE: tr < 5.0 ns

Z'N~50n

Z,N> 100 Kn C'N,,12pF

Tc" 5.0 ns

5/5 301

I I I I I I

I I I I I

I I I I

I I I

I I I I I

I I I I I

I I

I I I I I

I I I I

I I I

I I I I I

I I I I

I I I

I I I I

I I I I I

I I I I I I I

2N2368 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2368 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 ~ to 100 rnA. ~ Products approved to CECC 50004-0221023 available on request.

T0-18


c B

E

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCES VCEO VEBO ICM Ptot


Parameter

Value

Unit

40

V

40

V

15

V

= 0) Collector-emitter Voltage (I BE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0) Collector Peak Current (t = 10 Ils)

4.5

V

0.5

A

Total Power Dissipation at T amb " 25°C at T case " 25°C at T case " 100°C

0.36 1.2 0.68

W W W

- 65 to 200

°C



1/2

303


146 486

Max Max


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

0.4 30

).lA ).lA


VCB=20V VCB =20 V

V(BR) CBO


Ic=10).lA

40

V

V(BR)CES


Ic = 10).lA

40

V

V(BR)CEO


Ic=10mA

15

V

V(BR) EBO


IE = 10

4.5

V

VCE (sat)


Ic=10mA

IB = 1 mA


Ic=10mA

IB = 1 mA

0.7

DC Current Gain

Ic=10mA VCE = 1 V Ic=100mA VCE = 2 V Ic=10mA VCE = 1 V Tamb =- 55°C

20 10


Ic=10mA f=100MHz

V eE =10V


IE = 0 f = 1 MHz

VeB = 5 V

ts

Storage Time

ton toff

ICBo

VBE (sat) hFE

.

IT CeBo

.

. .

304

J.lA

0.2

0.25

V

0.75

0.85

V

60

10 400

550

MHz

2.5

4

pF

Ic=10mA Vce = 10 V IBt =- IB2 = 10 mA

5

10

ns

Turn-on Time

le=10mA IB1 =3 mA

Vee = 3 V

9

12

ns

Turn-off Time

le=10mA IB1 =3 mA

Vee =3 V IB2=-1.5mA

10

15

ns

• Pulsed: pulse duration = 300 !Is, duty cycle = 1 %.

2/2

Tamb = 150°C

2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 flA to 100 mA.

TO-18


c B

E


Unit

Vcso


40

V

VCES

Collector·emitter Voltage (VSE = 0)

40

V

VCEO


15

V

VESO


4.5

V

ICM

Collector Peak Current (t = 10 IlS)

0.5

A

Ptot

Total Power Dissipation at T amb :0: 25°C at T case :0: 25 DC at T case :0: 100°C

0.36 1.2 0.68

W W W

- 65 to 200

°C

Symbol

T stg • Tj

Parameter


Products approved to CECC 50004·022/023 available on request.

January 1989

1/2

305



146 486


Test Conditions

Min.

Typ.

Max.

Unit

0.4 30

flA flA

VCB=20V VCB=20V

V(BRI CBO


Ic=10flA

40

V

V(BRI CES

Collector-emitter Breakdown Voltage (V BE = 0)

Ic = 10 flA

40

V

V(BRI CEO *


Ie = 10 mA

15

V

V(BRI EBO


IE =10flA

4.5

V

VCE (satl *


Ic=10mA

IB = 1 mA

VBE (satl *


Ic = 10 mA

IB = 1 mA

0.7

DC Current Gain

Ie = 10 mA VCE = 1 V Ie = 100 mA VeE = 2 V Ic = 10 mA VeE = 1 V T amb = - 55°C

40 20


Ic = 10 mA f = 100 MHz

VCE =10V


IE = 0 f = 1 MHz

VCB = 5 V

ts

Storage Time

ton toff

hFE *

fT CeBo

*


ICBo

306

0.2

0.25

V

0.75

0.85

V

120

20 500

MHz

650 2.5

4

pF

Ie = 10 mA Vcc = 10 V IB1 =- IB2 =10mA

6

13

ns

Turn-on Time

Ic = 10 mA IB1 = 3 mA

Vcc = 3 V

9

12

ns

Turn-off Time

Ic = 10 mA IB1 =3 mA

Vee = 3 V IB2 =-1.5 mA

13

18

ns

Pulsed: pulse duration = 300 ~. duty cycle = 1 %.

2/2

Tamb = 150°C

2N2369A HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 flA to 100 mA.

TO-18


c B

E


Parameter

Value

Unit

40

V

40

V

15

V

4.5

V

Collector Current

0.2

A

ICM

Collector Current (10 lls pulse)

0.5

A

P tot

Total Power Dissipation at T amb :5 25°C at T case :5 25°C at T case :5 100°C

0.36 1.2 0.68

W W W

- 65 to 200

°C

= 0)

VCBO


VCES

Collector-emitter Voltage (V BE

VCEO


VEBO


Ic

T stg , Tj

= 0)

= 0)

= 0)


December 1988

1/4

307

2N2369A THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max

146 486


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

30

j.tA

0.4

j.tA

IC80


VC8 =20V

ICES

Collector Cutoff Current (V8E = 0)

VCE=20V


Ic=10j.tA

40

V

Collector-emitter Breakdown Voltage (V8E = 0)

Ic=10j.tA

40

V

Collector-emitter Breakdown Voltage (18 = 0)

Ic=10mA

15

V


IE = 10 j.tA

4.5

V

V(8R) C80

V(8R)CES

V(8R)CEO *

V(8R) E80

T amb = 150°C

VCE (sat) *


Ic = 10 mA Ic = 30 mA Ic = 100 mA Ic = 10 mA T amb = 125°C

V8E (sat) *


Ic = 10 mA 18 18 =30 mA 18 Ic=100mA 18 Ic = 10 mA 18 T amb = - 55 to 125

hFE *

DC Current Gain

Ic = 10 mA Ic=10mA Ic = 30 mA Ic=100mA

0.35 V 1V 0.4 V 1V

40 40 30 20

63 66 71

hFE *

DC Current Gain

Ic=10mA VCE = 0.35 V T amb = - 55 DC

20

50


Ic = 10 mA f=100MHz

VCE=10V

500

675

CC80


IE = 0 f = 1 MHz

VC8 = 5 V

ts * *

Storage Time

ton ** toff **

fT

308

0.14 0.17 0.28

= 1 mA

0.7

= 3 mA = 10 mA = 1 mA DC

0.59

VCE VCE VCE VCE

= = = =

0.2 0.25 0.5

V V V

0.19

0.3

V

0.8 0.9 1.1

0.85 1.15 1.6

V V V

1.02

V

120 120

MHz

2.3

4

pF

Ic = 10 mA Vcc=10V 18t = - 182 = 10 mA

6

13

ns

Turn-on Time

Ic=10mA 18t = 3 mA

Vcc = 3 V

9

12

ns

Turn-off Time

Ic = 10 mA 181 = 3 mA

Vcc = 3 V 182 =-1.5 mA

13

18

ns

• Pulsed: pulse duration = 300 ~s. duty cycle = 1 % . •• See test circuit.

2/4

18 = 1 mA 18 = 3 mA 18 = 10 mA 18 = 1 mA

2N2369A Collector-emitter Saturation Voltage.

DC Current Gain. G 3'100

100 80

,-

i

IV IIUllii

lilli!

!

60 40 20

nl1l +-+I++!I iIHI:II--++fjjjjjf"-. lil l !1 lillii:

'=H'ffiliII-r""".-++t

lllj-i

jfJi.i

! 10"

1::1 ",1 1

1

,

III1

10- 1

10

Collector-base and Emitter-base capacitances.

10 2

10

IC(mAI

Contours of Constant Transition Frequency. VeE' (V) 6

~~~~~~~!!~~~Gj"I!'4l I.'

~o

I

le' O

I'

'1 Ii

10:

"I

I-III--+--+-+++Wl-!,~-o-l.MH}-I! ~ii'i,t I

!Hm I'

,

~

, •

I

I

III

, 'B

4

'B

10

. ,.

11'1,

, 'B


, 10

.

Ie (mA)

10'

Switching Characteristics. G 3144

,:~i:'~)'~J

'i

:iill

. 20ns :1 ii, I

!

10

10'

le(mA)

I

I

iii

I

:';,1

I, 'i I i ili·1 10

1

10'

•

II

i,;1

le(mA)

3/4

309

2N2369A Test Ci rcu it for Is

'A'

O,l,uF 1Kil vOUT

~

Y'N PULSE GENERATOR

rr-~~"Ie.-+--I

TO OSCILLOSCOPE Z IN =50.n

VIN t r < In!o SOURCE'IMPEOANCE=50n PW ~ JOOn!o

DC<2~, o

~10

112,3 n F

l.

10NF

t=--

• 6Y---"-10"'. Pulse waveform o at ~ "Y --~

,,'-"'="-=-

+

llV

~N

s-

46U,

~1---~>----

Test Circuit for ton, toff

I

PULSE GENERATOR

V'Ntr< lns. SOURCE IMPEDANCE: SOil

PW ;?:: 300ns. DC <.: 2"'.

O D ' N10",

4/4

310

2,3nF

0,1 I F O'lNF+ +

VBB =-3V VIN ::: +- 15 V

ton

,*;

~2,3nF

tr:-::: , "s

VBB=+12V V1N =-15V

VCC=3V

V BB

~~~: +---~-----j(~

TO OSCILLOSCOPE INPUT tMPEDANC E '" 50 !l

5- 4622

.----~~----

L._+_J.:.-t--- 90'"

2N2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N24S4 is a silicon planar epitaxial NPN transistor in Jedec TO-iS metal case. It is designed for use in high-performance, low-noise amplifier circuits from audio to high-frequency. ~ Products approved to CECC50002-129 avail-

able on request.

TO-1S


c B

E


Unit

VCBO


60

V

VCEO


60

V

VEBO


6

V

Collector Current

50

mA

0.36 1.2 0.68

W W W

- 65 to 200

°C

Symbol

Ic Ptot


Parameter

Total Power Dissipation at T amb at T case at T case

25°C 25°C OS; 100°C

OS;

OS;


1/4

311

2N2484 THERMAL DATA 146 486

Max Max



Parameter

Min.

Test Conditions

Typ.

Max.

Unit

10 10

nA IlA

10

nA


Vcs =45 V Vcs =45 V


VES = 5 V

Coillector-base Breakdown Voltage (IE = 0)

Ic=101lA

60

V


Ic=10mA

60

V


IE=101lA

6

V


Ic = 1 mA

Is=0.1mA

VSE


Ic=1001lA

VCE = 5 V

hFE

DC Current Gain

Ic = 1 IlA Ic=101lA Ic=1001lA Ic = 500 IlA Ic = 1 mA Ic = 10 mA Ic= 1O IlA T amb = - 55°C

VCE VCE VCE VCE VCE VCE VCE

V V V V V V V

150

400

15

20

MHz

60

78

MHz

Icso IESO VISR)CSO VISR)CEO

.

VISR) ESO VCE Isat)

.

T amb = 150°C

=5 =5 =5 =5 =5 =5 =5

0.2

0.35

V

0.5

0.57

0.7

V

30 100 175 200 250

200 290 375 430 450 430

500

800

20

hIe


Ic = 1 mA f = 1 kHz

VCE = 5 V

fT


Ic = 50 IlA f = 5 MHz Ic = 500 IlA f = 30 MHz

VCE = 5 V

900

VCE = 5 V

CESO


Ic = 0 f = 1 MHz

VES = 0.5 V

3.5

6

pF

Ccso


IE = 0 f = 1 MHz

Vcs = 5 V

3.5

6

pF

Noise Figure

VCE = 5 V Ic=101lA Rg = 10 kQ f = 100 Hz f = 1 kHz f = 10kHz f = 10 to 10000 Hz

4 1.8 0.6 1.8

10 3 2 3

dB dB dB dB

NF

hie

hre

.. ..

hoe

..

Input Impedance

Ic = 1 mA

VCE = 5 V

15

24


Ic = 1 mA

VCE = 5 V

4.25

8

kQ 10- 4

Output Admittance

Ic = 1 mA

VCE = 5 V

15

40

IlS

• Pulsed: pulse duration = 300 • * f= 1 kHz.

2/4

312

~,

duty cycle = 1 % .

3.5


Collector-base Capacitance. G 1875

At+Wl'

111111 VCE =5V

2N2484

i

400

i-" :! I

200

100

,I

.... ~

-

"-

.........

-- - -'-

,

!

~'

I i

\

2N24831

I

./

(pF )

l I 111

,/

300

Ii

G 2056

CCBO

I

I

f=1MHz

III

III

2

468

10"3

2

4 '8

10"2

12

10-1

Noise Figure vs. Source Resistance.

Contours of Constant Noise Figure

f = 100 Hz. G 205 7

NF

! Iii

!VeE =5V

(dB)---.!

Ii!!

B=15.7kHz

I C=100,..A

~. ~

.< ,-

~

j

'i 1 ,I i

"

/ /

I:

i

-UJ#i

30~A

. .

~

10

-11 ;Ol'~

-"1-1tf . , .I



f = 1 kHz.

f = 10 kHz.

I', Ji 1l.4 . .. ...III -,

veE - 5V

I, I

:I

;

i I

M··~.~Bi

i

"iii;

'-1=10kHz--, BdkHz 10-' , 10

i'i'i'"r1,

10'

3/4

313

2N2484 Contours of Constant Noise Figure

f= 1 MHz.

4/4

314

2N2845 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2845 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for high speed switching applications at collector currents up to 500 mAo

TO-18


c

E

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic Ptot

T stg , T j

January 1989

Parameter

Value

Unit

60

V

30

V

= 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (Ie = 0)

5

V

Collector Current

500

mA

Total Power Dissipation at T amb ~ 25 DC at T case ~ 25 DC at Tcase ~ 100 DC

0.36 1.2 0.68

W W W

- 55 to 200

DC



1/3

315



146 486


Symbol

Min.

Typ.

Max.

Unit

200 200

nA !-LA

VCB =30 V VCB = 30 V

V(BR) CBO


Ic =0.1 mA

60

V

V(BR) CEO *

Collector-emitter Breakdown Voltage (I B = 0)

Ic =30 mA

30

V

V(BR) EBO


IE=0.1mA

5

V

Ic = 50 mA Ic = 150 mA Ic = 500 mA

IB = 5 mA IB = 15 mA IB = 50 mA

0.16 0.22

OA

OA8

1

V V V


Ic = 50 mA Ic = 150 mA Ic = 500 mA

Is = 5 mA Is = 15 mA Is = 50 mA

0.78 0.85 1.12

1.2 1.6

V V V

DC Current Gain

Ic Ic Ic Ic

=50 mA = 150 mA =500 mA = 500 mA

VCE = 10 V VCE=10V VCE=10V VCE = 1 V

30 20 10

60 60 50 30


Ic = 50 mA f = 100 MHz

VcE =10V

250

350


IE = 0 f = 1 MHz

VCB=10V

6

8

pF

ton

Turn-on Time

Ic=150mA IB1 = 15 mA

Vcc=10V

18

40

ns

toff

Turn-off Time

Ie = 150 mA Vec = 10 V 1St =-IB2 = 15 mA

25

40

ns

V BE

(sat) *

(sat)

hFE *

fT CCBO

*

Pulsed: pulse duration = 300 Ils. duty cycle = 1 %.

2/3 316

T amb = 125°C


VCE

*

Test Conditions


ICBo

120

MHz


Collector-emitter Saturation Voltage. G 3061

VC.E(sat ) le= 10 Ie

(VI

80.

0..

60.

0.3

.0.

Q,

-

f I

-

~ ~:::l-1

JXI f0 -

I

,;Je

V

-

I

i , "

2

10 2

10

t

Tamb:::25-C

:-We .1 F It j

D.'

10- 1

-~

Ie (rnA)

r--- c-

, ,, , , " Ie (rnA) ,0.'

2

,0.



e

VaEloal1 (VI

(pFl"

c.=~~HEi===tllll:at +--h-+++fjj

1----t-t-i-titHt

t2

09

'" 0..6

03

10- 1


10

Switching Characteristics. G 30.

G 3090

veER

I (nsI

(VI 6

, ,

10

8

,. ~

~~II

f=:l~

,

'}-

6

V'"

~-.

'C~

2

'1\

~

,

,

-~

~:;;.-

IC,,10181'''-10182

i

lO-1

a

50.

100

150

200

250.

I

iii i

I

i

300 Ie (mA)

Ii I

IVCC.=lO -'-;--

-

I

,

10

I I I I ! i I I 1 ! I I I , i ' I

i1

;

8 6

,

.A,

"

//~

,\'~

.........

'6 1---

'Co;

\.,

II Ii , II

1

\. \. \.

'0.

-.,

I

II II II

'

Is

I

!

,I

I/"!"~

~Iil I'..., '"""-

I

I 68

I LZ 1/1

I I

,0.'

1

III J.d'1 I ! I II Id I I ! T"H I I II If

,

,

68

le(mM

3/3

317

2N2857 VHF/UHF AMPLIFIERS DESCRIPTION The 2N2857 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case, intended for amplifier, oscillator and converter applications up to 500 MHz.

TO-72


c B

E


Parameter

Vcso


VCEO


VESO



=

=

0) =

0)

0)

Value

Unit

30

V

15

V

2.5

V

Collector Current

40

mA

Total Power Dissipation at T amb 0: 25 DC at T case 0: 25°C

200 300

mW mW

- 65 to 200

°C


1/2

319



Parameter

583 875

Max Max

=

25 'C unless otherwise specified)

Test Conditions

Min.

Typ.

Max.

Unit

10 1

nA ~


VCB = 15 V VCB=15V

V(BRJ CBO


Ic =1 ~

30

V

V(BRJ CEO


Ic = 3 mA

15

V

V(BRJ EBO


IE = 10

2.5

V

ICBo

DC Current Gain

Ic = 3 mA

VCE = 1 V

30

150

Ic = 5 mA 1= 100 MHz

VCE = 6 V

1

1.9


Ic = 0 1=1 MHz

VEB = 0.5 V

1.4

C ee

Reverse Capacitance

Ic = 0 1=1 MHz

VCE=10V

0.6

1

pF

NF

Noise Figure

Ic = 1.5 mA 1=450 MHz

VCE = 6 V Rg = 50 Q

3.8

4.5

dB

G pe

Power Gain (neutralized)

Ic = 1.5 mA f = 450 MHz

VCE = 6 V Rg = 50 Q

12.5

19

dB

Po

Oscillator Power Output

Ic = 12 mA f = 500 MHz

VCB = 10 V

30


Ic = 2 mA 1= 31.9 MHz

VCB = 6 V

4

IT CEBO

rbb'Cb,c

320

~


hFE

2/2

T amb = 150°C

GHz pF

mW

7

15

ps

2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. ~ Products approved to CECC 50004-0221023

available on request.

TO-18


::4: 5_6896


Value

Parameter

Unit

2N2894

2N3209

VCBO


-12

- 20

V

VCES


-12

- 20

V

VCEO


- 12

- 20

V

VEBO


Ic Ptot T stg , T j October 1988

Collector Current Total Power Dissipation at T amb :s; 25°C at T case :s; 25°C Storage and Junction Temperature

-4

V

- 200

mA

0.36 1.2

W W

- 65 to 200

°C 1/4

321


t46 486

Max Max


Symbol ICBO

Collector Cutoff Current (IE = 0) (lor 2N2894 only)

ICES


VIBR) eBO

VIBR)CES

VIBR)CEO

·

VISR)EBO VCE Isat)

VBE Isat)

hFE

.

IT CEBO

·

·

322

VCB=-6V lor 2N2894 VCE=-6V lor 2N3209 VCE=-10V VCE=-10V

Min.

T amb = 125°C

T amb = 125°C

Typ.

Max.

Unit

-to

IJA

- 80

nA

- 80 - 10

nA IJA


Ic=-10IJA lor 2N2894 lor 2N3209

-12 - 20

V V


Ic=- 1O IJA lor 2N2894 lor 2N3209

-12 - 20

V V


Ic=-10mA lor 2N2894 lor 2N3209

-12 - 20

V V

IE = - 100 IJA

-4

V


lor 2N2894 Ic=-10mA Ic =- 30 mA Ic =- 100 mA lor 2N3209 Ic=-10mA Ic =- 30 mA Ic =- 100 mA

Is =- 1 mA IB =- 3 mA IB =- 10 mA

- 0.15 - 0.2 - 0.5

V

IB=-1mA IB =- 3 mA IB =-10mA

- 0.15 - 0.2 - 0.6

V V


Ic=-10mA Ic =- 30 mA Ic =- 100 mA

IB =- 1 mA IB=-3mA IB =-10mA

DC Current Gain

Ic=-10mA lor 2N2894 lor 2N3209 Ic =- 30 mA lor 2N2894 lor 2N3209 Ic =- 100 mA lor 2N2894 lor 2N3209 Ic =- 30 mA Tamb = - 55 'C lor 2N2894 lor 2N3209

VCE =- 0.3 V


- 0.78 - 0.85

- 0.98 - 1.2 - 1.7

V V

V V V V

30 25 VCE =- 0.5 V 40 30

150 120

VcE =-1V 25 15 VCE =- 0.5 V 17 12


Ic =- 30 mA 1= 100 MHz

VcE =-10V


Ic = 0 1=1 MHz

VEB =- 0.5 V

• Pulsed: pulse duration = 300 Ils, duty cyde = 1 %.

2/4

Test Conditions

400

MHz 6

pF

2N2894-2N3209 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter Collector-base Capacitance

CCBO

-toft -ton

**

Test Conditions

Min.

Typ.

Max.

Unit

6 5

pF pF

Vec=-2V

60

ns

Ie = - 30 mA Vee =- 2 V IB1 = -IB2 =- 1.5 mA

90

ns

IE = 0 f = 1 MHz for 2N2894 for 2N3209

VcB =-5V

Turn-on Time

Ie = - 30 mA IB1 =- 1.5 mA

Turn-off Time

See test circuit.


Emitter-base and Collector-base capacitance.

la 'L-;-'-~~+-"+"+~+'+'!-Yl--!-...l..j-Lf1J!l 10- 1

10

-Ic(mA}



3/4

323

2N2894·2N3209 Test Circuit for ton, toft.

VaB

VCC =-2.0V

VIN~,uF £0011 5-4621

4/4

324

PULSE GENERATOR:

TO OSCILLOSCOPE:

t"" 1.0 ns

t,< 1.0ns

DC<2% PW =400 ns ZIN=50Q "', VF!J3 = + 3.0 V, VIN = - 7.0 V IonV•• =-4V, VIN=+6V

ZIN;' 100 KQ

2N2904/2N2905 2N290S/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904, 2N2905, 2N2906 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904, 2N2905) and in Jedec TO-18 (for 2N2906 and 2N2907) metal cases. They are designed for high-speed saturated switching and general purpose applications.

e:

2N2904/2N2905 approved to CECC 50002102, 2N2906/2N2907 approved to CECC 50002-103 available on request.

TO-18

To-39


:~: ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ic Ptot


Parameter

Value

Unit


- 60

V

Collector Current


Total Power Dissipation at T amb " 25°C for 2N2904 and for 2N2906 and at T case " 25°C for 2N2904 and for 2N2906 and Storage and Junction Temperature

- 40

V

-5

V

- 600

mA

2N2905 2N2907

0.6 0.4

W W

2N2905 2N2907

3 1.8

W W

- 65 to 200

°C

1/2

325

2N2904-2N2905-2N2906-2N2907 THERMAL DATA


I Thermal


Max Max

Resistance Junction-case Thermal Resistance Junction-ambient

Parameter

=

2N2904 2N2905

2N2906 2N2907

58.3°C/W 292°C/W

97.3°C/W 437.5°C/W

25 'C unless otherwise specified)

Test Conditions

Min.

Typ.

Max.

Unit

- 20 - 20

nA IlA


Vcs = - 50 V VCS = - 50 V

ICEx


VCE =-30V

- 50

ISEx

Base Cutoff Current (VSE = 0.5 V)

VCE=-30V

- 50

V(SR) cso


Ic=-101lA

- 60

V(BR)CEO *


Ic =- 10 mA

- 40

V(SR) ESO


IE=- 1O IlA

-5

VCE (sat) *


Ic =- 150 mA Ic =- 500 mA

IB=-15mA Is =- 50 mA

- 0.4 - 1.6

V V

VSE (sat) *

Base-emiiter Saturation Voltage

Ic =- 150 mA Ic =- 500 mA

Is =- 16 mA Is =- 50 mA

- 1.3 - 2.6

V V

DC Current Gain

for 2N2904 and 2N2906 Ic=-0.1mA VCE=-10V VcE =-10V Ic=-1mA Ic=-10mA VCE=-10V Ic=-150mA VCE=-10V Ic =- 500 mA VCE=-10V

20 25 35 40 20

for 2N2905 and 2N2907 Ic =- 0.1 mA VCE=-10V Ic =- 1 mA VCE=-10V Ic =-10 mA VCE=-10V Ic =- 150 mA VCE=-10V Ic =- 500 mA VCE=-10V

35 50 75 100 30

Icso

hFE *

hFE *

DC Current Gain

T amb = 150°C

V V

120

300

Ic = - 50 mA f=100MHz

VCE = - 20 V

CEBO


Ic = 0 f = 1 MHz

VEs =-2V

30

CCBO


IE = 0 f = 1 MHz

Vcs=-10V

8

td

Delay Time

Ic=-150mA lSI =-15 mA

Vcc = - 30 V

10

tr

Rise Time

Ic =- 150 mA lSI = - 15 mA

Vcc=-30V

40

ts

Storage Time

Ic =-150 mA Vcc =- 6 V IBI =-IB2 _=-15 mA

80

tf

Fall Time

Ic =- 150 mA Vcc =- 6 V lSI =-IB2 =- 15 mA

30

• Pu)sed: pulse duration ~ 300 ~s, duty cycle ~ 1 %.

2/2

326

nA V


fT

nA

MHz

200

pF pF ns ns ns ns

2N2904A-2N2905A 2N2906A-2N2907 A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904A, 2N2905A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2904A and 2N2905A) and in Jedec TO-18 (for 2N2906A and 2N2907 A) metal cases. They are designed for high-speed saturated switching and general purpose applications. ~ 2N2904A/2N2905A

approved to CECC 50002-100, 2N2906A!2N2907 A approved to CECC 50002-103 available on request. TO-18

TO-39


::-~: ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO


VEBO


Ic P tot

T stg , Tj January 1989

Value

Parameter Collector-base Voltage (IE = 0)

60


V

- 60

V

5

V

- 600

mA

2N2905A 2N2907 A

0.6 0.4

W W

2N2905A 2N2907 A

3 t.8

W W

- 65 to 200

'C

Collector Current Total Power Dissipation at T amb S 25°C for 2N2904A and for 2N2906A and at T case S 25°C for 2N2904A and for 2N2906A and

Unit

1/4

327

2N2904A-2N290SA-2N2906A-2N2907 A THERMAL DATA

Max Max

Rth i-easeJ Thermal Resistance Junction-case Rth i-amb Thermal Resistance Junction-ambient

2N2904A 2N2905A

2N2906A 2N2907A

58.3°C/W 292°C/W

97.3°C/W 437.5°C/W


Parameter

Test Conditions

Max.

Unit

-10 -10

nA

VCE=-30V

- 50

nA

Base Cutoff Current (VSE = 0.5 V)

VCE=-30V

- 50

nA


Ic=-101lA

- 60

V


Ic =-10 mA

- 60

V

V(SR) ESO


IE=-101lA

-5

V

VCE (sat)


Ic =- 150 mA Ic =- 500 mA

Is =- 15 mA Is =- 50 mA

- 0.4 -1.6

V V


Ic=-150mA Ic =- 500 mA

Is=-16mA Is =- 50 mA

- 1.3 - 2.6

V V

DC Current Gain

for 2N2904A and 2N2906A Ic =- 0.1 mA VCE=-10V Ic =- 1 mA VcE =-10V VCE = - 10 V Ic =- 10 mA Ic =- 150 mA VCE=-10V Ic =- 500 mA VcE =-10V

40 40 40 40 40

for 2N2905A and 2N2907 A Ic=-0.1mA VCE=-10V Ic =- 1 mA VCE=-10V Ic=-10mA VCE=-10V Ic =- 150 mA VCE=-10V Ic =- 500 mA VCE=-10V

75 100 100 100 50


Vcs = - 50 V Vcs = - 50 V

ICEx


ISEx

Icso

V(SR) cso V(SR) CEO

VSE (sat) hFE

hFE

. .

.

. .

DC Current Gain

Min.

T amb = 150°C

Typ.

IlA

120

300


Ic =- 50 mA f = 100 MHz

V cE =-20V

CESO


Ic = 0 f = 1 MHz

VES = - 2 V

30

pF

Ccso


IE = 0 f = 1 MHz

Vcs=-10V

8

pF

Delay Time

Ic =- 150 mA IS1 =- 15 mA

Vcc =- 30 V

10

ns

Rise Time

Ic =- 150 mA IS1 =- 15 mA

Vcc = - 30 V

40

ns

Storage Time

Ic =- 150 mA Vcc = - 6 V IS1 =-l s2 =-15 mA

80

ns

fT

td tr ts

..

.. ..

• Pulsed: pulse duration ~ 300 Ils, duty cycle ~ 1.5 % . • , See test circuit.

2/4

328

200

MHz

2N2904A-2N2905A-2N290SA-2N2907 A ELECTRICAL CHARACTERISTICS (continued) Max.

Unit

Fall Time

Ie =- 150 mA Vee =- 6 V lSI =-ls 2 =-15mA

30

ns

ton

.. ..

Turn-on Time

45

ns

loft

..

Ie =- 150 mA lSI =-15 mA

Turn-off Time

Ie =- 150 mA Vee=-6V lSI =-ls2 =-15 mA

100

ns

Symbol If

Parameter

Test Conditions

Min.

Typ.

Vee = - 30 V

• Pulsed: pulse duration = 300 ~s, duty cycle = 1.5 %. **

see test circuit.

Normalized DC Current Gain.

Collector-emitter Saturation Voltage. VCE(sat) r-r-~-TTT11"rr,..,rmTTTr-'-T-TTITfT'1

IV)

0.8

0.4

0.2

0.1

Collector-base and Emitter-base capacitances.

10

100

Ie (rnA)


10

100

IC(mA)

3/4

329

2N2904A-2N290SA-2N290SA-2N2907 A Test Circuit for lon, tr, 1cJ.

1K Jl

°H

- 16V

V'N

200ns 5-4628

PULSE GENERATOR: tr::;;2.0 ms Frequency ~ 150 Hz Zo~50

n

TO OSCILLOSCOPE: tr < 5.0 ns Z'N> 10Mn

Test Circuit for toff, to, tf.

.J.. PULSE GENERATOR: 2.0 ns Frequency ~ 150 Hz

tr:S;

5-4629

TO OSCILLOSCOPE: tr < 5.0 ns ZIN > 100 Mn

Zo~50n ---------.-~---------------

4/4

330

2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA.

TO-18


5-1>897


Parameter

= 0)

Vcso


VCES


VCEO


VESO


= 0)

= 0)

= 0)

Value

Unit

40

V

40

V

15

V

5

V mA

Ic

Collector Current

200

Ic

Collector Peak Current (t < 10 ~s)

500

mA

Ptot

Total Power Dissipation at T amb < 25 'C at T case < 25 DC at T case < 100 DC

360 1200 680

mW mW mW

T stg

Storage Temperature

- 55 to 200

°C

200

°C

TJ January 1989

Max. Operating Junction Temperature

1/2

331


146 486

Max Max


Parameter

ICES


.

Test Conditions VCE = 20 V VCE = 20 V

Tamb = 125°C

Min.

Typ.

Max.

Unit

300 40

nA flA

V(SR)CSO

Collector-base Breakdown Voltage

Ic = 100 flA

IE = 0

40

V

V(SR)CEO

Collector-emitter Breakdown Voltage

Ie = 10 mA

Is = 0

15

V

.

V(SR)ESO hFE

VeE(sat)

.

VSE(sat) *

IT Ceso C ESO

Emitter-base Breakdown Voltage

IE = 100 flA

Ie = 0

5

DC Current Gain

VeE=OAV VCE = 0.5 V VCE = 1 V VeE=OAV Tamb = 55°C

Ic Ie Ic Ie

= = = =

30 mA 100 mA 300 mA 30 mA

30 25 15


Ie = 30 mA Ie = 100 mA Ie = 300 mA Ie = 30 mA Tamb = 125°C

Is Is Is Is

= = = =

3 mA 10 mA 30 mA 3 mA


Ie = 30 mA Ie = 100 mA Ie = 300 mA

Is = 3 mA Is = 10 mA Is = 30 mA


VeE=10V f=100MHz

Ie = 30 mA


Vcs = 5 V;

IE = 0

f= 1 MHz

5

pF

f = 1 MHz

8

pF

15

ns

25

ns

18

ns

2/2

332

12


VEB = 0.5 V; Ic = 0

too

Turn-on Time

Vec = 15 V IS1 = 30 mA

toff

Turn-off Time

Ic = 300 mA Vec = 15 V IS1 = - IS2 = 30 mA

ts

Storage Time

Ie = 10 mA Vec = 10 V IS1 = -ls2 = 10 mA


= 300 /lB, duty cycle = 1,5 %.

V 120

0.75

0.18 0.28 0.50

V V V

0.25

V

0.95 1.20 1.70

V V V

350

MHz

Ic = 300 mA

2N3014 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3014 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA.

TO-18


::4: 5-6897


Parameter

= 0)

VCBO


VCES


VCEO


VEBO


= 0)

= 0)

= 0)

Value

Unit

40

V

40

V

20

V

5

V mA

Ic

Collector Current

200

Ie

Collector Peak Current (t < 10 flS)

500

mA

Ptot

Total Dissipation at T amb < 25 'C at T case < 25 DC at T case < 100 'C

360 1200 680

mW mW mW

T stg

Storage Temperature

- 55 to 200

°C

200

°C

Tj October 1988

Maximum Operating Junction Temperature

1/2

333

2N3014 THERMAL DATA Rth j-case Rth j-amb


Value

Unit

146 486

°C/W °C/W

Max Max



Parameter

Test Conditions

Collector Cutoff Current (V8E = 0) VCE=20V VCE=20V

ICES

Min_

Tamb = 125°C

Typ_

Max_

Unit

300 40

IlA

nA

V(8R)C80

Collector-base Breakdown Voltage

le=1001lA

IE = 0

40

V

V(8R)CEO


Ic = 10 A

18 = 0

20

V

5

V

.

.

IlA

Emitter-base Breakdown Voltage

IE = 100

DC Current Gain

VeE=OAV VCE=OAV VCE = 1 V VCE=OAV Tamb =- 55°C

Ie Ic Ic Ic

= 10 mA = 30 mA = 100 mA = 30 mA


Ic =10 mA Ic =30 mA Ie = 100 mA Ic = 30 mA T amb = 125°C

18 18 18 18

= 1 mA = 3 mA = 10 mA = 3 mA


Ic=10mA Ic =30 mA Ic=100mA

18 =1 mA 18 = 3 mA 18 = 10 mA


VCE=10V 1=100MHz

Ic =30 mA

CC80


VC8 =5 V;

IE = 0

1=1 MHz

5

pF

CE80


VE8 = 0.5 V; Ic = 0

1=1 MHz

8

pF

ton

Turn-on Time

Vcc = 2 V 181 = 3 mA

16

ns

toff

Turn-off Time

Ic=30mA Vcc =2 V 181 =- 182 = 3 mA

25

ns

ts

Storage Time

Ic=10mA Vcc = 10 V 181 =-182 = 10 mA

18

ns

V(8R)E80 hFE

VCE(sat)

.

V8E(sat)

.

IT

• Pulsed: pulse duration ~ 300 MS. duty cycle ~ 1.5 %.

2/2

334

Ic = 0

25 30 25

120

12

0.70 0_75

0_18 0_18 0_35

V V V

0_25

V

0_80 0.95 1.20

V V V

350

MHz

Ic =30 mA

2N3019 2N3020

I I !

'I

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.

TO-39


c B

E


Parameter

Value

Unit

140

V

80

V

VCBO


VCEO


VEBO


7

V

Collector Current

1

mA

0.8 5

W W

- 65 to 200

°C

Ie P tot


Total Power Dissipation at T amb S 25°C at T case S 25°C Storage and Junction Temperature

1/2

335


Max Max


Parameter

ICBo


lEBO V(BR)CBO V(BR)CEO

.

V(BR)EBO VCE(sat)

.

VBE(sat) hFE

. .

Test Conditions VCB = 90 V VCB =90 V

Tamb = 150°C

nA V

Collector-emitter Breakdown Voltage (IB =0)

Ic = 10 mA

80

V


IE = 100 IlA

7

V


Ic = 150 mA Ic = 500 mA

Base-emitter Saturation Voltage DC Current Gain

IB = 15 mA IB = 50 mA

0.2 0.5

V V

Ic = 150 mA

IB = 15 mA

1.1

V

Ic=0.1mA

V cE =10V For 2N3019 For 2N3020 VeE =10V For 2N3019 For 2N3020 VCE = 10 V For 2N3019 For 2N3020 VCE=10V For 2N3019 For 2N3020 VCE=10V VeE = 10 V


Ic = 1 mA 1=1 kHz


Ic = 50 mA 1= 20 MHz

100

90 40

120

100 40

300 120

50 30 15

100

40

80 30

400 200

VCE=10V For 2N3019 For 2N3020

CEBO


Ic = 0 1=1 MHz

VEB =0.5 V

CCBO


IE = 0 1=1 MHz

VCB=10V

Noise Figu re lor (2N3019) only

Ic = 100 IlA f = 1 kHz

VCE=10V Rg = 1 KQ


Ic=10mA 1=4 MHz

VCE=10V

• Pulsed: pulse duration = 300 Ils. duty cycle = 1 %.

50 30

VCE = 5 V For 2N3019 For 2N3020

336

10 140

For 2N3019

2/2

nA IlA

Ic=1001lA

Ic = 1 A Ie = 150 mA T amb = - 55°C

rbb'C b,c

Unit

10 10

VEB = 5 V

Ie = 500 mA

NF

Max.


Ic = 150 mA

fr

Typ.


Ic = 10 mA

hie

Min.

100 80

MHz MHz 60

pF

12

pF

4

dB

400

ps

2N3053 AMPLIFIERS AND SWITCH DESCRIPTION The 2N3053 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for medium-current switching and amplifier applications.

TO-39


c B

E


Parameter

Value

Unit

VCBO


60

V

VCEo


40

V

VEBO


5

V

700

mA


Collector Current Total Power Dissipation at T case

$


25°C

5

W

- 65 to 200

°C 1/2

--~.----

337

2N3053 THERMAL DATA Thermal Resistance Junction-case

Max


Test Conditions

Parameter Collector Cutoff Current (VBE ~ 1.5 V)

VCE~60V

V(BR)CBO

Collector-base Breakdown Voltage (IE ~ 0)

Ic ~ 100 j.JA

V(BR)CEO

Collector-emitter Breakdown Voltage (18 ~ 0)

Ic

~

Collector-emitter Breakdown Voltage (RBE ,; 100)

Ic

~

Emitter-base Breakdown Voltage (Ic ~ 0)

IE ~ 100 f.lA


Ic


Ic ~ 150 mA


Ic

ICEX

V(BR)CER

.

V(BR)EBO VCE(sat) VBE

. . .

VBE(sat) hFE

.

IT C EBO

DC Current Gain Transition Frequency Emitter-base Capacitance Collector-base Capacitance

~

2/2

338

250

nA

40

V

10 mA

50

V

5

V

150 mA

150 mA

IB

~

15 mA

18

~

15 mA

VCE ~ 2.5 V

~

VCE~10V

I~

50 mA 20 MHz

Ic

~

0 1 MHz

VEB

~

VCB ~ 10 V

0

1.4

VCE ~ 2.5 V

Ic

150 mA

I ~ 1 MHz • Pulse: pulse duration = 300 ,us, duty cycle = 1 %.

Unit

100 f.lA

~

IE

Max.

V

Ic~150mA

~

Typ.

60

Ic

I CCBO

~

Min.

VCE~10V

~

0.5 V

25 50

V

1.7

V

1.7

V

250 100

MHz 80

pF

15

pF

2N3107/2N3108 2N31 09/2N311 0 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case primarily intended for large signal, low noise industrial applications.

TO-39


c B

E


Parameter

2N3109 2N3110

2N3107 2N3108

Unit

VCBO


80

100

V

V CEO


40

60

V

VEBO Ic Ptot T stg , T j January 1989


7

Collector Current

1

A

0.8 5

W W

- 65 to 200

°C

Total Power Dissipation at T amb $; 25°C at T case $; 25°C Storage and Junction Temperature

V

1/3

339

2N3107-2N3108-2N3109-2N3110 THERMAL DATA Max Max



Parameter

Icso


ICES

Collector Cutoff Current (VSE = 0) VCE=60V

IESO V(SR)CSO

V(SR)CEO

.

Test Conditions Vcs=60V

Min.

Tamb = 150°C

Typ.

Max.

Unit

10 10

JJA nA

10

nA


VES = 5 V


Ic=100JJA For 2N 3109 and 2N 3110 For 2N 3107 and 2N 3108

80 100

V V


Ic=30mA For 2N 3109 and 2N 3110 For 2N 3107 and 2N 3108

40 60

V V

7

V

V(SR)ESO

Emitter-base Breakdown Voltage (lc = 0)

IE = 100 JJA

VCE(sa!)


Ic=150mA Ic = 1 A

Is = 15 rnA Is = 100 rnA

0.25 1

V V


Ic=150mA Ic = 1 A

Is = 15 rnA Is = 100 rnA

1.1 2

V V

DC Current Gain

For 2N 3107 and 2N 3109 Ic=150mA VCE = 1 V Ic =0.1 rnA VCE=10V Ic = 500 rnA VCE =10V Ic = 150 rnA VCE=10V Tamb =- 55°C For 2N 3108 and 2N 3110 Ic=150mA VCE = 1 V Ic =0.1 rnA VCE=10V Ic =500 rnA VCE = 10 V Ic = 150 rnA VCE = 10 V Tamb =- 55°C

VSE(sa!) hFE

.

fT

. .


Ic=50mA VCE = 10 V f = 20 MHz For 2N 3107 and 2N 3109 For 2N 3108 and 2N 3110

CESO


Ic = 0 f = 1 MHz

Ccso


Vcs = 10 V IE = 0 f = 1 MHz For 2N 3107 and 2N 3108 For 2N 3109 and 2N 3110

NF ton toff

.. ..

Noise Figure

Ic = 30 JJA f = 1 kHz

VCE=10V Rg = 1 KQ

Turn-on Time

Ic = 150 rnA lSI = 7.5 rnA

Vcc=20V

Turn-off Time

Ic=150mA Vcc=20V lSI =-ls 2 =7.5 rnA

• Pulsed: pulse duration = 300 ~. duty cycle = 1 %. w* See test circuit.

2/3

340

VES = 0.5 V

100 35 40

300

30 40 20 25

120

15

70 60

MHz MHz 80

pF

20 25

pF pF

8

dB

200

ns

1000

ns

2N31 07-2N31 08-2N31 09-2N311 0 Normalized DC Current Gain.

Contours of Constant Narrow Band Noise Figure. ~.

RS

,

VCE~ltv :~. =1KHz L

-

(U ) - -

r-

-liT t

1\

:\6d9

f\it\ n:\~_ +:t_ -"" ·~R\~'dB

1K

i

'dB

I~

!.-

-~

100

4-;ie

6dK

. . t-

~ ._L :\ ~_

1)

i'-

0.01

01

lC (mAl

Test Circuit for ton, toff.

10,.uS n+16V

-.J

L

V1N

5- 4630 PULSE GENERATOR: t, of input pulse < 15 ns tr of input pulse < 15 ns

TO OSCILLOSCOPE: > 15 ns liN" 100 KQ ~

3/3

341

2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications.

TO-39


c

E


Value

Unit

VCBO


150

V

VCEO


150

V

V ESO


Ic Ptot T stg , T j January 1989

Parameter

5

V

Collector Current

150

mA

Total Power Dissipation at T amb :5 25°C at T case :5 25°C

0.8 5

W W

65 to 200

°C


1/2

343



Parameter

IcBo


"C unless otherwise specified) Test Conditions

VCB=100V VCB=100V

Min.

Typ.

T amb = 150 °C

Max.

Unit

10 10

/.lA

100

nA

nA


VEB = 4 V

V(BR)CBO


Ic = 100

/.lA

150

V

V(BR)CEO *


Ic = 10 mA

150

V

V(BR)EBO


IE = 100 f.lA

5

V

VCE(sa!) *


Ic =50 mA

VBE(sa!) *


Ic =50 mA

IB = 5 mA

DC Current Gain

Ic = 100 /.lA Ic = 30 mA Tamb = - 55 'C Ic =30 mA

VCE=10V V CE=10V

15 30

35 60

VCE=10V

12

24


Ic =30 mA 1= 20 MHz

VCE=10V

CEBO


VEB = 0.5 V 1=1 MHz

80

pF

CCBO


VCB = 20 V 1=1 MHz

9

pF

lEBo

hFE *

hIe

*

= 25

Max Max

Pulsed: pulse duration = 300 fls. duty cycle = 1 %.

2/2

344

IB = 5 mA

1

V

0.9

V

120

2

2N3137 RF AMPLIFIER DESCRIPTION The 2N3137 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is a primarily designed for application as a Class-C, RF power amplifier. In addition to the large signal capabilities, the low noise and high transition frequency of the 2N3137 provide excellent performance in a variety of linear amplifier for telecommunication applications. TO-39


c

E

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ptot T stg , Tj

January 1989

Parameter

Value

Unit

40

V

20

V


4

V

Total Power Dissipation at T amb <: 25°C at T case <: 25 DC

0.6 1

W W

- 65 to 200

°C



1/3

345



Parameter

ICBo


V(BR)CBO VCEO(sus)

.

V(BR)EBO VCE(sa!)

.

=

Max Max

25 'C unless otherwise specified) Test Conditions

VCB = 20 V VCB =20 V

T amb = 150°C

Unit

50 50

~

nA

40

V


Ic = 15 mA

20

V


IE = 1OO IlA

4

V


Ic = 50 mA

IB = 5 mA VCE = 5 V

Ic = 50 mA

Power Gain (class-C)

V cE =20V 1= 250 MHz

Pi = 100 mW

NF

Noise Figure

VCE=10V 1= 200 MHz

Ic = 30 mA Rg = 50 Q

0.12

0.3

20

70

120

6

7

dB

4

dB

2.8

3.5

V

pF


VCB=10V

1=1 MHz

IT


Ic = 50 mA

V cE =10V

500

750

MHz

11

Collector Efliciency

VcE =20V 1=250 MHz

Pi = 100 mW

40

60

%

CCBO

Pulsed: pulse durallon

346

Max.

0.12 0.1

Ic = 100 IlA

DC Current Gain

2/3

Typ.


G pe

hFE

Min.

= 300 ~s, duty cycle = 1 %.



10- 1


10.

Ie (rnA)

Contours of Constant Transition Frequency. G-31,2212

I II'

VBE(sat ) (v)

. nt + Ie =10181

-

I

0..9

tJ

-

l-

I

08 I

I

25'C

,

.........r

0..7 0..6

+'

"L' I

I

--

100·C

--

V

~i;'!IT

Ii!

05

-""

~

=~55·C

lamb

f-- .

i

0..4

I II

,

10-1

.-

-l-

H, II

-( I

, '8

'8

1

Collector-base capacitance.

, '8 10.

'C{mA)

Emitter-base capacitance.

0..5

1.5

2.5 VEB (V)

3/3

347

2N3250 2N3251 AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3250 and 2N3251 are silicon planar epitaxial PN P transistors in Jedec TO-18 metal case. They are suited for switching and amplifier applications.

TO-18


::4: ABSOLUTE MAXIMUM RATINGS Symbol VC80 VCEO VE80 Ic Ptot T stg , T j Jan uary 1989

Parameter

Value

Unit

= 0) Collector-emitter Voltage (18 = 0) Emitter-base Voltage (Ic = 0)

- 50

V

- 40

V

-5

V

Collector Current

- 200

mA

0.36 1.2

W W

- 65 to 200

°C


Total Power Dissipation at T amb ,,; 25°C at T case ,,; 25°C Storage and Junction Temperature

1/3

349


Max Max

146 487


Parameter

Max.

Unit

VCE=-40V

- 20

nA

Base Cutoff Current (VsE=3V)

VCE=-40V

- 50

nA

Coillector-base Breakdown Voltage (I E = 0)

Ic= -10J.!A

- 50

V


Ic =- 10 mA

- 40

V

V(SRI ESO

Emitlter-base Breakdown Voltage (Ic = 0)

IE=-10J.!A

-5

V

VCE

(satl


Ic=-10mA Ic =- 50 mA

IB =- 1 mA IB =- 5 mA

VSE

(sat)


Ic =-10 mA Ic =- 50 mA

IB =- 1 mA Is =- 5 mA

0.6

DC Current Gain

lor 2N3250 Ic =- 0.1 mA Ic =- 1 mA Ic =-10 mA Ic =- 50 mA lor 2N3251 Ic =- 0.1 mA Ic=-1 mA I c =-10mA Ic =- 50 mA

VCE =-1 V VCE =- 1 V VCE=-1V VCE =-1 V

40 45 50 15

VCE = - 1 V VCE = - 1 V VCE=-1V VCE = - 1 V

80 90 100 30

Ic =- 1 mA 1=1 kHz

VCE=-10V lor 2N3250 lor 2N3251

50 100

Ic =- 10 mA 1=100MHz

VCE = - 20 V lor 2N3250 lor 2N3251

250 300

ICEx

Collector Cutoff Current (VBE = 3 V)

IBEx V(SRICSO V(SRICEO

hFE

.

hIe

IT

.

. .



Test Conditions

Min.

Typ.

0.25 0.5

V V

0.9 1.2

V V

150

300

200 400 MHz MHz

CEBO

Emilter-base Capacitance

Ic = 0 1=1 MHz

VEB = - 1 V

8

pF

Ccso


IE = 0 1=1 MHz

Vcs = - 10 V

6

pF

NF

Noise Figure

Ic=-100J.!A 1= 100 Hz

VCE =-5 V Rg = 1 kQ

6

dB

hie

Input Impedance

Ic=-1 mA 1=1 kHz

VcE =-10V lor 2N3250 lor 2N3251

6 12

kQ kQ

Ic=-1 mA 1=1 kHz

VCE=-10V lor 2N3250 lor 2N3251

h re



2/3

350

=300 IlS, duty cycle = 1 %.

1 2

10- 3 2x10- 3

2N3250-2N3251 ELECTRICAL CHARACTERISTICS (continued) Symbol hoe

Parameter

Test Conditions

Output Admittance

td

Delay Time

tf

Delay Time

Max.

Unit

40 60

I!S I!S

35

ns

Vee = 3 V

35

ns

Ic=-1mA f = 1 kHz

VCE=-10V for 2N3250 for 2N3251

Ic = 10 mA 181 = 1 mA

Vee = 3 V

le=10mA = 1 mA

181

Min. 4 10

Typ.

ts

Storage Time

Ic =10 mA Vee =3 V 181 = - 182 = 1 mA

200

ns

If

Fall Time

Ie =10 mA Vee =3 V 181 = - 182 = 1 mA

50

ns

le=-10mA

250

ps

rbb,Cb'C


• Pulsed: pulse duration = 300 ~, duty cycle

VeE=-20V

= 1 %.

~

"~I

SGS-THOMSON

3/3

iIiID1C1III@1m!.1MW1II1!!I1lIJ1IC1I

351

2N3301 2N3302 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3301 and 2N3302 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed to cover a wide range of amplifier and switching applications.

TO-18


c

E


Value

Unit

VCBO


60

V

VCEO


30

V

VEBO

Emitter·base Voltage (lc = 0)

5

V


Parameter

Collector Current

0.5

A


0.36 1.8

W W

- 65 to 200

°C


1/3

353


97.2 486

Max Max


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

10 10

nA

10

nA


Vcs =50 V VCB =50 V

Emitter-cutoff Current (Ic = 0)

VES = 3 V

V(SR)CSO


Ic = 10 ~

60

V

V(SR)CEO *


Ic=10mA

30

V

V(SR) ESO


IE=10~A

5

V

ICEs IEso

T amb = 150°C

~A

VCE

(sat) *


Ic=150mA Ic = 500 mA

Is = 15 mA Is =50 mA

0.22 0.6

V V

VSE

(sat) *


Ic = 150 mA Ic = 500 mA

Is = 15 mA Is =50 mA

1.1 1.5

V V

DC Current Gain

for 2N3301 Ic =0.1 mA Ic = 1 mA Ic = 10 mA Ic=150mA Ic = 500 mA Ic = 150 mA for 2N3302 Ic=0.1mA Ic = 1 mA Ic = 10 mA Ic = 150 mA Ic = 500 mA Ic = 150 mA

hFE *

hfe

VCE=10V VCE=10V VCE=10V VCE=10V VCE=10V VCE = 1 V

20 25 35 40 20 20

40 60 70

VCE=10V VCE=10V VCE=10V VCE=10V VCE=10V VCE = 1 V

35 50 75 100 50 50

80 140 200

VCE=10V

2.5


Ic = 50 mA f = 100 MHz

CESO


VEs = 2 V f = 1 MHz

Ccso


Vcs = 10 V f = 1 MHz

ton **

Turn-on Time

Ic = 300 mA IS1 = 30 mA

toff **

Turn-off Time

Ic = 300 mA Vcc = 25 V IB1 =-I B2 =30 mA

• Pulsed: pulse duration = 300 flS, duty cycle = 1 % . •• See test circuits.

2/3

354

Vcc = 25 V

120 60 50

300 125 75

20

pF

8

pF

60

ns

150

ns

2N3301-2N3302 Test Circu it for ton.

300ns 16V r-1 V O~ L IN

5- 4611 PULSE GENERATOR:

tr:::; 1.0 ns Z'N = 50 £l

TO OSCILLOSCOPE: tr 1.0 ns ZIN = 100 kn

Test Circuit for toft.

.~(CC="25V

Vss = -15V

500.0.

USO.o.

5 - 4612 PULSE GENERATOR: tr:::;20 ns Z,N=50n

TO OSCILLOSCOPE: tr :::; 1.0 ns ZIN = 100 kn

3/3

355

I

I I I I I I I

I I I I I I I I

I I I I I I

I I I I I I I I

I I I I

I I I I I I I I I I


."

I I I I I I I I

I I I I I

I I I I I I I I I

I I I I

I I I I I I I I I I

I I I I I I I I

I I I

2 N3502/2 N3503 2N3504/2N3505 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N3502, 2N3503, 2N3504 and 2N3505 are silicon planar epitaxial PNP transistors in Jedec TO-39 (2N3502, 2N3503) and in Jedec TO-18 (2N3504, 2N3505) metal cases. They are designed for high-speed saturated switching and general purpose applications.

TO-39

TO-18


:~:

L _ _ _ ___ ABSOLUTE MAXIMUM RATINGS Value Symbol

Parameter

= 0) = 0)

Vcso

Collector·base Voltage (IE

VCEO


VEso

Emitter-base Voltage (IC

Ic

P'D'

TS'g, Tj

= 0)


October 1988

2N3503 2N3505

- 45

- 60

V

- 45

- 60

V

5

V

600

mA

2N3505 2N3503

0.4 0.7

W W

2N3505 2N3503

1.3 3

W W

- 65 to 200

°C

Collector Current Total power Dissipation at Tamb 00 25°C For 2N3504, For 2N3502, at Tcase 00 25°C For 2N3504, For 2N3502,

Unit

2N3502 2N3504

1/2

357

2N3052-2N3503-2N3504-2N3505 THERMAL DATA



Max Max

Thermal Rsistance Junction-ambient

2N3502 2N3503

2N3504 2N3505

132°C/W 437°C/W

58.3°C/W 250°C/W

ELECTRICAL CHARATERISTICS (T amb = 25 'C unless otherwise specified) Symbol ICEs

Icso

V(SR)CSO

V(SR)CEO"

Parameter

Test Conditions

Min.

Collector Cutoff Current (VSE = 0) For 2N3503 and 2N3505 VCE = - 50 V For 2N3502 and 2N3504 VCE = - 30 V

Typ.

Max.

Unit

-10

nA

-10

nA

-10

nA

-10

nA


For 2N3503 and 2N3505 VCE =- 50 V Tamb = 150°C For 2N3502 and 2N3504 V cE =-30V T amb =150°C


Ic =- 1O IlA For 2N3503 and 2N3505 For 2N3502 and 2N3504

- 60 - 45

V V


Ic =- 10 mA For 2N3503 and 2N3505 For 2N3502 and 2N3504

- 60 - 45

V V

-5

V

V(SR)ESO


VCE(sat)"


Ic =-50 mA Is =- 2.5 mA Ic =-150 mA Is=-15mA Ic =- 500 mA Is=-50mA

- 0.25 - 0.4 -1.6

V V V

VSE(sat)"


Ic =-50 mA Is =- 2.5 mA Ic =- 150 mA Is =- 15 mA Ic =- 500 mA Is =- 50 mA

-1 - 1.3 -2

V V V

DC Current Gain

Ic =- 0.01 mA Ic =- 0.1 mA Ic=-1mA Ic=-10mA Ic = - 150 mA Ic =- 500 mA Tamb =- 55°C Ic = 50 mA

VCE =- 10 V VCE=-10V VCE=-10V VCE=-10V VCE=-10V VCE=-10V

80 120 135 140 100 50

VCE=-10V

50


Ic =- 50 mA f=100MHz

VCE =- 20 V

CESO


Ic = 0 f = 100 kHz

VES =- 0.5 V

Ccso


IE = 0 f = 1 MHz

Vcs=-10V

NF

Noise Figure

Ic = - 30 IlA f = 1 MHz

VCE=-5V RG = 10 KQ

ton

Turn-on Time

toff

Turn-off Time

hFE"

fT

• Pulsed: pulse duration = 300 ~s. duty cycle

2/2

358

IE=-101lA

= 1.5 %.

300

200

MHz 30

pF

8

pF

4

dB

Ic =- 300 mA Vcc =- 30 V IS1 =- 30 mA

40

ns

Ic = - 300 mA Vcc = - 30 V IS1 =-ls 2 =-30 mA

100

ns

2N3700 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The 2N3700 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, intended for small signal, low noise industrial applications.

TO-18


c

E


Unit

Vcso


t40

V

VCEO


80

V

VESO


7

V

Collector Current

1

A

0.5 1.8 1

W W W

- 65 to 200

°C

Symbol

Ic Ptot

T stg , Tj January 1989

Parameter

Total Power Dissipation at T amb at T case at T case

25°C S 25°C S 100°C

S


1/2

359


Max Max


Parameter

ICBo


Test Conditions VCB = 90 V Vcs=90V

Min.

Typ.

Tamb = 150°C

Max.

Unit

10 10

nA !lA nA


VEB = 5 V

V(BR)CBO


Ic = 100!lA

140

V

V(BR)CEO *

Collector-emitter Breakdown Voltage (18 = 0)

Ic = 30 mA

80

V

V(BR)EBO


IE = 100!lA

7

V


Ic = 150 mA Ic = 500 mA

IB = 15 mA IB = 50 mA

0.2 0.5

V V


Ic=150mA

IB=15mA

1.1

V

Ic = 0.1 mA Ic=10mA Ic = 150 mA Ic = 500 mA Ic = 1 A Ic=150mA T.mb = - 55°C

VcE =10V VCE =10V VCE=10V VCE =10V VCE=10V VCE=10V

lEBO

VCE(s.!)

.

VBE(s.!) hFE

.

.

10

DC Current Gain


Ic = 1 mA 1=1 kHz

VCE = 5 V

IT


Ic = 50 mA 1= 20 MHz

VcE =10V

CEBO


Ic = 0 1=1 MHz

VEB =0.5 V

CCBO


IE = 0 1=1 MHz

VCB=10V


Ic = 10 mA 1=4 MHz

VCB=10V

• Pulsed: pulse duration = 300 1lS. duty cycle

2/2

360

= 1 %.

300

40

hfe

rbb,Cb'c

50 90 100 50 15

80

25

400 100

MHz

60

pF

12

pF 400

ps

2N3724 HIGH-CURRENT SWITCH DESCRIPTION The 2N3724 is a silicon planar epitaxial transistor in TO-39 metal case. It is a high-current switch used for memory applications requiring breakdown voltages up to 30 V and operating currents to 1 A.

fl I· ·: · .· ..........~~::< ····· ."

"."'::"'.

;........

~

TO-39


c B

E


Value

Unit

VCBO


50

V

VCES


50

V

VCEO


30

V

VEBO


6

V

Collector Current

1

A

0.8 3.5

W W

- 65 to 200

°C

Ic Ptot T stg , Ti January 1989

Parameter


s: 25°C s: 25°C


1/3

361



Parameter

ICBo


=

Max Max


VCB =40 V VCB =40 V

Min.

Typ.

Tamb = 100°C

Max.

Unit

1.7 120

~ ~

V(BR)CBO


Ic =10 ~

50

V

V(BR)CES


Ic =10~

50

V

V(BR)CEO


Ic = 10 mA

30

V

V(BR)EBO

IE = 10 itA

6

V

VeE (sa!)

.

Emitter-base Breakdown Voltage (Ie = 0) Collector-emitter Saturation Voltage

= 10 mA = 100 mA = 300 mA = 500 mA = 800 mA = 1000 mA

IB IB IB IB IB IB

= 1 mA = 10 mA = 30 mA =50 mA = 80 mA = 100 mA

VBE(sat)

.

Ic Ie Ic Ic Ic Ic


Ic Ic Ic Ie Ic Ic

= 10 mA = 100 mA = 300 mA = 500 mA = 800 mA = 1000 mA

IB IB IB IB IB IB

= 1 mA = 10 mA =30 mA = 50 mA = 80 mA = 100 mA

Ic Ic Ic Ie Ic Ie

= 10 mA = 100 mA = 300 mA = 1000 mA = 800 mA = 500 mA

VCE VCE VeE VCE VCE VCE

hFE *

.

DC Current Gain

V V V V V V


Ic =50 mA f=100MHz

VCE =10V

CCBO


Ic = 0 f = 1 MHz

VCB=10V

CEBO


VEB = 0.5 V

ton

..

Ic =0 f = 1 MHz

Turn-on Time

Vcc = 30 V

toft

..

Ic = 500 mA IB = 50 mA

Turn off Time

Ie = 500 mA Vec =30 V IB1 =- IB2 = 50 mA

hie

• Pulsed: pulse duration = 300 Ils, duty cycle = 1 %. **

=1 =1 =1 =5 =2 =1

See test circuit.

2/3

362

0.64 0.75 0.89 0.9 1.0 1.1 30 60 40 30 25 35

60 90 60

0.25 0.20 0.32 0.42 0.65 0.75

V V V V V V

0.76 0.86 1.1 1.2 1.5 1.7

V V V V V V

150

3 12

pF

55

pF

35

ns

60

ns

2N3724 SWitching Characteristics.

Switching Characteristics. G·)155

'0

Ie 2

1(::10ISI =-10162 VCC=30V

,L-____ IlO

~L-

=SOOmA

2 IB1=-'82= SOmA '1:1:= 30V

, L-~~__L-(~~__L-~~__~

__~__~~-L~~ 400

200

600

Ie (mA)

-50

50

'00

Test Circuit for ton, toft.

t9'7~V'Nl1.0

F

62it 5 - 4610 PULSE GENERATOR:

TO OSCILLOCOPE :

If. IfS 1.0 ns PW = 1.0 ms

1, <

1.0 ns Z,N" 100 KW

Z'N = 50 W

DC<2%

3/3

363

2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum IT (300 MHz) and tight control on storage time.

TO-39


c B

E


Parameter

= 0)

VCBO


VCES


VCEO


VEBO


Ic Pto , T S '9' T J January 1989

= 0)

= 0)

= 0)

Collector Current Total Power Dissipation at T amb at T case

,; ,;

25°C 25 'C


Value

Unit

80

V

80

V

50

V

6

V

1

A

0.8 3.5

W W

- 65 to 200

°C 1/4

365

I·


Max Max


Parameter

leBo


Test Conditions VCB = 60 V VeB =60 V

Min.

Typ.

T amb = 100 °C

Max.

Unit

1.7 120

f-lA f-lA

V(BR)CBO


Ie = 10 f-lA

80

V

V(BR)CES


Ic=10f-lA

80

V

V(BR)eEO *


50

V

6

V

Ie = 10 mA

V(BR)EBO


VeE(sat) *


le=10mA Ie = 100 mA Ie = 300 mA Ie = 500 mA Ie = 800 mA Ie = 1000 mA

IB = 1 mA IB = 10 mA IB = 30 mA IB =50 mA IB = 80 mA IB =100mA

0.19 0.21 0.31 0.4 0.5 0.6

0.25 0.26 0.4 0.52 0.8 0.95

V V V V V V

VBE(sat) *


Ie Ie Ie Ie Ie Ie

= 10 mA = 100 mA =300 mA = 500 mA =800 mA = 1000 mA

IB IB IB IB IB IB

0.64 0.75 0.89

0.76 0.86 1.1 1.2 1.5 1.7

V V V V V V

Ie Ie Ie Ic Ic Ic

= 10 mA = 100 mA = 300 mA = 1000 mA = 800 mA = 500 mA

VeE VeE VCE VCE VCE VCE

hFE *

DC Current Gain

IE=10f-lA

= 1 mA = 10 mA = 30 mA = 50 mA = 80 mA = 100 mA =1 =1 =1 =5 =2 =1

V V V V V V


Ic = 50 mA 1= 100 MHz

VCE=10V

CCBO


IE = 0 1=1 MHz

VCB=10V

C EBO


..

Ie = 0 1=1 MHz

VeB =0.5 V

Turn-on Time

Ie = 500 mA IB =50 mA

Vee = 30 V

tolf **

Turn olf Time

Ie = 500 mA Vee=30V IB1 =-IB2 = 50 mA

hIe

ton

• Pulsed: pulse duration = 300 Ils. duty cycle = 1 %. ** See test circu it.

2/4

366

0.9 1.0 1.1 30 60 40 25 20 35

60 90 60 65 40

150

3 10

pF

55

pF

35

ns

60

ns





'a'

'0


Ie

(rnA)

Switching Characteristics. G 3156

t {ns)8 - -

I--t----

'....

L...--::

'0 ~ ~

i

'1--1-

_~.....d::::::'1--""

kp"'" _ t---

'I_I--

I--

f-

t--

6

--l--I--+--+-r--r , ', ,' C'l ,IL__~_~_~~~i~I~,~, 2

100

Ie'" SOOmA 2 'Bl:-IeZ" SOmA -

'C=10I Si =-10'S2 "CC=30V

200

400

600

Ie (mA)

---

--

+-

--- +--

'tc" 30V ,

L--L~_~-L_L--L~_~-L~

-50

50

'00

3/4

367

2N3725 Test Circuit for !on, toff.

VBB = -3.8V

+9.7fl

V,Nl1.0tUF 6211

5-4618 PULSE GENERATOR: tr, tl::;; 1.0 ns PW ~ 1.0 ~s l'N~50Q

DC<2%

4/4

368

TO OSCILLOSCOPE: tr < 1.0 ns liN;' 100 KQ

2N3866 BFR97 VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifiercircuits and oscillator applications.

TO-39



Parameter

Value

Unit

VCES


55

V

VCEO


30

V


3.5

V

Collector Current

0.5

A

VEBO Ic Ptot T stg , Tj March 1989

Total Power Dissipation at T case"; 25 'C Storage and Junction Temperature

5

W

- 65 to 200

°C 1/3

369

2N3866-BFR97 THERMAL DATA Thermal Resistance Junction-case

ELECTRICAL CHARACTERISTICS(T amb Symbol

Max

35

= 25 'C unless otherwise specified)

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

20

>LA

Collector Cutoll Current (IB = 0)

VCE =28 V


Ic =0.1 mA

55

V

Collector-emitter Sustaining Voltage (I B = 0)

Ie = 5 mA

30

V

V(BR)EBO


IE = 100 >LA

3.5

V

VCE(sat)


Ie = 100 mA

IB = 20 mA

DC Current Gain

Ie = 50 mA Ie = 360 mA

VCE = 5 V VCE = 5 V


Ie = 50 mA 1= 200 MHz

VCE=15V


IE = 0 1=1 MHz

VCB=-28V

Po"

Output Power

Vcc = - 28 V 1=400 MHz

Pi = 100 mW

11 ••

Collector Elliciency

Vcc=-28V 1=400 MHz

Po = 1 W

ICEO V(BR)CES VCEO (sus)

hFE

.

.

.

IT CCBO

• Plused : pulse duration

1 10 5

200

500

MHz 3

W

45

%

= 300 ms, duty cycle = 1 %.

= 400 MHz). Ct, C2, C4, Cs = 3 - 25 pF CF 7-15 pF Rt = 5.6 Q R2 = 1 kQ L1, L2 = 5 cm Line (2 x 5 mm) L3, Ls, L6 = RF choke 0.1 >LH L4 = Ferrite choke 1 mm

2/3

370

pF

1

"" See test circuit.

Test Circuit for Power Output Measurement (f

V

2N3866-BFR97 Collector-base Capacitance.

High Frequency Current Drain.

G-3J94

ht0l----f---l-++++I++_ --+-+-+-~,f-l-+j,

~;~~ f-+-H-+-H-+--H-+--H-+-+-+-+-+-+-+-1

, II

t =200MHz

15 ~

!

'Jo

I

~MJ~o+~~~r~~~it+jj~+ +_+_++++ -

o

2

I

,

16

10

24

32

VCB(V)

Power Rating Chart.

RF Output Power.

G-3391

Po . -_ _ _ _,-----_ _,--_,----".0;20'",,{392"

(W)r------r---r--~VCC=-28V

,* 0.8

a5L-----L---L--~~~

100

200

300

400

f (MHz)

40

80

120

3/3

371

I I I I I I I

I I I I I

I I I I I

I I

I I

I I I I I I I I I I

I I I

I I

I I I I I

I I

I I

I I I

I I I I I I I

I I I

I I

I I I I I

I I

I I I

I I

I I I I I I I I I I

I I

I I I I I

I I I I I

I I

I I I I I I I I I I

2N3930 2N3931 HIGH-VOLTAGE AMPLIFIERS DESCRIPTION The 2N3930 and 2N3931 are silicon planar epitaxial PNP transistors in Jedec TO-18 (2N3930) and Jedec TO-39 (2N3931) metal cases. Both devices feature high voltage, high gain, low noise and excellent current gain linearity from 10 ~ to50 mAo

T()'18

TO-39


S_6896


Value

Unit

VC80


-180

V

VCEO


-180

V

VE80


Ic Ptot

T stg , Tj Octobe(1988

Parameter

Collector Current Total Power Dissipation at T amb " 25°C For 2N3930 For 2N3931 at T case" 25°C For 2N3930 For 2N3931 Storage and Junction Temperature

-6

V

-100

mA

0.4 0.7

W W

1.4 2.5

W W

- 55 to 200

°C 1/4

373

2N3930·2N3931 THERMAL DATA Rth j~case

R!h j·amb


Max Max

2N3930

2N3931

125°CfW 438°C/W

70°C/W 250°C/W


Parameter

ICBo


Test Conditions VCB =- 100 V VCB =- 100 V

Min.

Tamb = 125°C


VEB =-4 V

V(BR)CBO


Ic =- 10

V(BR)CEO


Ic = - 2 mA

- 180

V(BR)EBO

Emitter-base Breakdown Voltage (Ic =0)

IE=-101lA

-6

VCE(sa!)


Ic =- 10 mA

IB =- 1 mA


Ic=-10mA

IB=-lmA

DC Current Gain

Ic=-101lA Ic=-lmA Ic =- 10 mA Ic=-101lA Tamb = - 55°C Ic=-1001lA Tamb =- 55 OC

VCE=-10V VCE=-10V VCE=-10V VCE=-10V

lEBO

.

VBE(sa!) hFE

.

. .

IlA

CEBO


Ic = 0 1=1 MHz

VEB =- 0.5 V

CCBO


IE = 0 1=1 MHz

VCB =-5V

Noise Figure

Ic =-10 IlA Rg =10kn 1=10kHz 1=1 kHz 1= 100 Hz

VCE =- 5 V

• Pulsed: pulse duration = 300 J-lS, duty cycle = 1 %.

214 374

Unit

-10 -10

IlA

-10

nA

nA

V V V - 0.1

-0.25

- 0.74 - 0.9 60 80 80

110 170 200

15

60

30

90

40

60

160

20

25

5

7

1 1 2

3 3 10

V V

300

VCE=-10V

Ic=-lmA I =20 MHz

NF

Max.

- 180


IT

Typ.

VCE=-10V

B =2 kHz B =200 Hz B = 20 Hz

MHz pF pF

dB dB dB

2N3930-2N3931 DC Current Gain.

Collector-emitter Saturation Voltage. G 31!>7

111111111 VCE =-IOV

II

240

200

160

-VCE(sa tl

I IIII

(V)

-I C =-101 6

lamb': 125-(

.,1

H" illL

II Ir'" II

j.

120

G 3158

1111111:1 I 111111 I

0.2

25';>-

_._. 1-'

0,15

VI ,,',I

I

lili

I

0.1

II, II III

I I

40

,

'

0.05

;

i

I,

2

10-'

10 -Ie (mA)


,

~-i

II

L

·c

Tamb=125

'''hI

,,'

'0

1

....;. -+

_SSe eV-

"

II /[/

I ... ,

~.......

I

25'e, I

/

I

/

~t

!

-55'< i

I

"

I

2

, "

2

11I

I IIIII

(V)

I !

0.8

G 3162

0.6

....- H-

f.--""

'~ ..-

I

11

,j , ,

to- '

2

!

! ,

II

LL 2C

G

4

~Iei~~

r

10

,

-c' VCE =-5V f ",100Hz B =20Hz '

"""'"

-

r\

"\

10-1

, ,

....

",0

.~

..

, ,

..

10

aHo::t

.........

""

6

4',

N,

2

......

........ c_

3166

1~

~

-----"

...

i

III

Contours of Constant Noise Figure (f = 100 Hz).

,

,

'Ii"

1

!

~I.E=O

10

(kfi)

I

10-'

i~

"9 •

ri'j-j-

-

,

G 3163

j-H-

.= =-

I

I

-Ie (mA)

_. 0

f-

I


'- 5i.iH~

',I

,

1+

10

~~-~I

I

:lj)CI , , I I I ,II

1

.r=''l

-

,

10

[

---

I I

eEBo Ie =0.

!

10

I I

!

-tt t 2

I'--

-T

I

I'

:JTl til

0.2

j

I

f.--""

~r-'

i

r

0.4

--

,

=-r--

(pFl

lamb =-55~

.1.

r-

e •

....... ~

II

V

(mA)

Emitter-base and collector-base capacitances. C. 3159

-VBE(sat )

, "

-Ie

10

, ,

..

-Ie (mAl

lO-1

I'6

,

2dB 4

.........

~-

......

~ r--.....

.......

............. ~

, ,. -IC(mA)

3/4

375

2N3930-2N3931 Contours of Constant Noise Figure (f = 1 kHz). Rg

,

(kO)

6

~ i

""

:'"

,~

~ ,

'"

,

'"

8

",

6

VeE =-5V f =10kHz

6

5

..........

t---..' i'.

B =2kHz

4

4

3

ld8

II

~

"8

3 ..........

~

~

10-1

-Ie (mA)

6

.......

........... r-...

'"

,

-

,

'.""""'"N"'-

'"

(;-2065

I::' 't""TTTITffi,_-rnUUnmIT 1I11--H+I!IIl llIi-- - - - LlJulllWJL

"'-N ,

~

- - - I e =-10,uA, Rg =10kfi

f-

- - Ie

~-.-

=- lmA. Rg = , kQ

V~'::5V'-

d8

I'-.

I

4

r-;:6 r-;;:

~"

10.1

.1

(mA)


16

,

,.

-Ie

G-31 9

, I----VeE --5V , I----- != B-10Hz to 10kHz

Iii

~ ~4

Contours of Constant Wide Band Noise Figure.

376

8

..........

10- 2

4/4

0

(kn) 6

r--.... f-.-~

,~ ti;.,,: I's--s

I kill

,

G- 368

Rg ,

1 VCE =- 5V f =lkHz 8= 200Hz

Rg

Contours of Constant Noise Figure (f = 10kHz).

(",-31&7

1'-

I

'" .......

-\

~

...............

l"'-

K "'-"

j--.......

1'--

to- 2

10-1

r-....

II

,

~

,.

-Ie (mA)

4

lIl-

I0

'---

10

10'

10'

10'

10 6 f (Hz)

2 N3962/2 N3963 2N3964/2N3965 LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are silicon planar epitaxial PNP transistors in Jedec TO-18 me-tal case particularly intended for use in low noise applications. They features are excellent current gain linearity from 1 f.lA to 50 mA.

TO-18


::-~: ABSOLUTE MAXIMUM RATINGS Value Symbol

Parameter

= 0) = 0)

VCBO

Coliector-bClse Voltage (IE

VCEO


VEBO


Ic Pto t T stg , T J October 1988

= 0)

Collector Current Total Power Dissipation at T amb <; 25°C at T case <; 25°C Storage and Junction Temperature

Unit

2N3964

2N3962 2N3965

2N3963

- 45

- 60

- 80

- 45

- 60

- 80

V V

-6

V

- 200

mA

0.36 1.2

W W

- 65 to 200

°C 1/3

377

2N3962-2N3963-2N3964-2N3965 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max


Parameter

Test Conditions

Min.

Collector Cutoff Current (VSE = 0) For 2N3964 VCE=-40V VCE = - 40 V T amb = 150°C For 2N3962 and 2N3965 VCE = - 50 V VCE = - 50 V T amb = 150°C For 2N3963 VCE = - 70 V VCE=-70V T amb = 150°C

ICEs

.

IEso V(SR)CSO

V(SR)CES

V(SR)CEO'

Typ.

Max.

Unit

-10 -10

IlA

-10 -10

IlA

-10 -10

IlA

-10

nA

nA

nA

nA


VES = - 4 V


Ic=-101lA For 2N3964 For 2N3962 and 2N3965 For 2N3963

- 45 - 60 - 80

V V V

Collector-base Breakdown Voltage (VSE = 0)

Ic=- 1O !lA For 2N3964 For 2N3962 and 2N3965 For 2N3963

- 45 - 60 - 80

V V V


Ic =-5 mA For 2N3964 For 2N3962 and 2N3965 For 2N3963

- 45 - 60 - 80

V V V

-6

V

V(SR)ESO

IE=-101lA

VCE(sa!)

.


Ic =- 10 mA Ic =- 50 mA

Is =- 0.5 mA Is =- 5 mA

- 0.25 - 0.4

V V

VSE(sa')

.


Ic =- 10 mA Ic =- 50 mA

Is =- 0.5 mA Is =- 5 mA

- 0.9 - 0.95

V V

DC Current Gain

For 2N3962 and 2N3963 Ic=-11lA VCE=-5V Ic=-101lA VCE=-5V Ic=- 1OO !lA VCE=-5V Ic = - 1 mA VCE=-5V Ic=-10mA VCE=-5V Ic =- 50 mA VCE=-5V VCE=-5V Ic=- 10 !lA T amb = - 55°C

hFE

.


2/3

378

= 300 ~s, duty cycle = 1 %.

60 100 100 100 100 90 40

300 450

2N3962-2N3963-2N3964-2N3965 ELECTRICAL CHARACTERISTICS (continued)

.

Symbol hFE

hfe

IT

CEBO CCBO NF




Emitter-base Capacitance Collector-base Capacitance Noise Figure

Test Conditions For 2N3962 and 2N3963 V cE =-5V Ic =- 50 mA Tamb = - 55°C Ic=-lmA VCE=-5V T amb = 100°C For 2N3964 and 2N3965 VCE=-5V Ic =-1 ~ Ic =- 1O IlA VCE=-5V Ic=-100~ VCE=-5V Ic=-1 mA VCE=-5V Ic =-10mA VCE =-5V Ic = - 50 mA VCE=-5V Ic=-10~ VCE=-5V Tamb = - 55 OC Ic =- 50 mA VCE=-5V Tamb =- 55°C Ic=-1mA VCE=-5V T amb = 100°C

Min.

Typ.

Max.

45 600 180 250 250 250 200 180

500 600

100 90

800

Ic=-lmA V cE =-5V 1=1 kHz For 2N3962 and 2N3963 For 2N3964 and 2N3965

100 250

550 700

Ic =-0.5 mA VCE =-5 V 1= 20 MHz For 2N3962 and 2N3963 For 2N3964 and 2N3965

40 50

160 160

Ic = 0 1=1 MHz

VEB =- 0.5 V

IE = 0 1=1 MHz

VCB=-5V

Unit

MHz MHz pF

15

Ic =- 20 IlA VCE =- 5 V RG = 10 kn For 2N3962 and 2N3963 I = IOta 10 000 Hz I = 100 Hz B = 15 Hz f = 1 kHz B=150Hz 1=10kHz B = 1.5 kHz For 2N3964 and 2N3965 I = lata 1a 000 Hz 1= 10 Hz B =2 Hz I = 100 Hz B = 15 Hz 1=1 kHz B = 150 Hz B = 1.5 kHz 1=10kHz

pF

6 2

3 10 3 3 2 8 4 2

dB dB dB dB dB dB dB dB

• Pulsed: pulse duration = 300 !!S, duty cycle = 1 %.

3/3 379

.

,

I I I I I I

I I I

I I I

I I I

I I I

I I

I I I I I I I

I I I

I I I

I I I

I I

I I I

I I I I I I I

I I I

I I I

I I

I I I

I I I

I I I I I I I

I I I

I I I

I I

I I I

I I I I I I I I I I

I I I

I I

I I I

I

2N4013 HIGH-CURRENT SWITCH DESCRIPTION The 2N4013 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-current switch used for memory applications requiring breakdown voltages up to 30 V and operating currents to 1 A.

TO-18


c

E


Parameter

= 0)

Vcso


VCES


VCEo


VESO



= 0)

= 0)

= 0)

Collector Current Total Power Dissipation at T amb ~ 25°C at T case ~ 25°C Storage and Junction Temperature

Value

Unit

50

V

50

V

30

V

6

V

1

A

0.36 1.2

W W

- 65 to 200

°C 1/3

381



ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Min_

Max.

Unit

1.7 120 50

!lA !lA V

Ic = 10 IlA

50

V

Collector-Emitter Breakdown Voltage (Is = 0)

Ic = 10 mA

30

V

V(SR)ESO

Emitter-Base Breakdown Voltage (Ic = 0)

IE = 10!lA

6

V

VeE(sa!) *


Ie Ie Ie Ic Ic Ie

= = = = = =

10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA

Is Is Is Is Is Is

= = = = = =

1 mA 10 mA 30 mA 50 mA 80 mA 100 mA

VSE(sa!) *


Ie Ie Ie Ie Ie Ic

= = = = = =

10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA

Is Is Is Is Is Is

= = = = = =

1 mA 10 mA 30 mA 50 mA 80 mA 100 mA

Ic Ie Ic Ie Ie Ic

= = = = = =

10 mA 100 mA 300 mA 1000 mA 800 mA 500 mA

VCE VCE VeE VCE VCE VeE

Symbol

Test Conditions


Vcs = 40 V Vcs = 40 V

V(SR)CSO


Ie = 10 IlA

V(SR)CES


V(SR)eEO *

Icso

hFE *

DC Current Gain

Typ-

Tamb = 100°C

= = = = = =

1V 1V 1V 5V 2V 1V

0.64 0.75 0.89 0.9 1.0 1.1 30 60 40 30 25 35

0.25 0.20 0.32 0.42 0.65 0.75

V V V V V V

0.76 0.86 1.1 1.2 1.5 1.7

V V V V V V

150

3


Ie = 50 mA f= 100 MHz

VeE = 10 V

Ccso


IE = 0 f= 1 MHz

Ves = 10 V

12

pF

CESO


Ie = 0 f= 1 MHz

VES = 0.5 V

55

pF

ton **

Turn-on Time

Ie = 500 mA Is = 50 mA

Vee = 30 V

35

ns

tOff **

Turn-off Time

Ic = 500 mA Vee = 30 V IS1 = - IS2 = 50 mA

60

ns

hIe

• Pulsed: pulse duration = 300 ).ls. duty cycle = 1 %. ** See test circuit.

2/3

382

2N4013 Switching Characteristics.

Switching Characteristics. I (ns)

, ,f------~-

Is

1~ ~: L---i

:r----

r-

-==-1--:- f--- ~t~ p

'r------

10

!

G' )55 ,

-

I

i--

I'-~I

~~

~~I ~

dt-C

'r-----

,

--~

-- -- -

Id

1--.+----+----+- - - - - - - - --- f---

--

Ie ::: SOOmA 1

2 iB1=-IBZ=50mA -- ~--t-~

IC=10ISi =_10 IBI "(C=30V

---+--1--1

\/cC 30 \/ ,L-~-L~_L-~~~_L-~~

tOO

400

200

600

-50

Ie (rnA)

50

'00

Test Circuit for lon, toff.

t97~VIN11.0

F

621t 5 - 4610

PULSE GENERATOR: Ir, If <; 1.0 ns PW ~ 1.0 ~s liN = 50 0 DC<2%

TO OSCILLOSCOPE: Ir < 1.0 ns liN ~ 100 KO

3/3

383

2N4014 HIGH-VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum IT (300 MHz) and tight control on storage time.

TO-18


c B

E


Parameter

Value

Unit

VCBO

Collector·base Voltage (IE = 0)

80

V

VCEs

Collector·emitter Voltage (VBE = 0)

80

V

VCEO


50

V

VEBO


6

V

Collector Current

1

A

0.36 1.2

W W

- 65 to 200

°C

Ic P tot T stg , T J October 1988


,:; ,:;

25°C 25°C


1/4

385


Max Max

ELECTRICAL CHARACTERISITCS(T amb = 25 'C unless otherwise specified) Test Conditions

Unit

1.7 120 80

flA flA V

Ic =10 flA

80

V

Collector-Emitter Breakdown Voltage (18 = 0)

Ic = 10 mA

50

V


IE =10 IlA

6

V


Ic Ic Ic Ic Ic Ic

= 10 mA = 100 mA = 300 mA = 500 mA = 800 mA = 1000 mA

18 18 Is Is 18 Is

=1 mA =10 mA = 30 mA = 50 mA = 80 mA = 100 mA

0.19 0.21 0.31 0.4 0.5 0.6

0.25 0.26 0.4 0.52 0.8 0.95

V V V V V V


Ic Ic Ie Ic Ic Ic

= 10 mA = 100 mA = 300 mA =500 mA = 800 mA = 1000 mA

18 18 18 18 18 18

= = = = = =

0.64 0.75 0.89

0.76 0.86

V V V V V V

Parameter


VC8 =60 V VC8 =60 V

V(8R)C80


Ic=10flA

V(8R)CES

Collector-emitter Breakdown Voltage (V8E = 0)

V(SR)CEO

IC80

.

V(8R)E80 VCE(sat)

V8E (sat)

,

,

,

Min_

Max.

Symbol

Tamb = 100 'C

1 mA 10 mA 30 mA 50 mA 80 mA 100 mA

0.9 1.0 1.1

VCE VCE VCE VCE VCE VCE


Ic =50 mA f=100MHz

VCE=10V

CC80


IE = 0 f = 1 MHz

Vcs = 10 V

10

pF

CE80


Ic = 0 f = 1 MHz

VE8 =0.5 V

55

pF

ton "

Turn-on Time

Ic = 500 mA Vcc = 30 V

18 =50 mA

35

ns

toff "

Turn-off Time

Ic = 500 mA Vcc =30 V 181 =-182 =50mA

60

ns

hIe

• Pulsed' pulse duration .. See test circuit.

2/4

386

=

300 ms. duty cycle

=

1 %.

=1 =1 =1 =5 =2 =1

V V V V V V

30 60 40 25 20 35

60 90 60 65 40

1.1

1.2 1.5 1.7

Ic=10mA Ic = 100 mA Ic = 300 mA Ic = 1000 mA Ic = 800 mA Ic = 500 mA

hFE

DC Current Gain

Typ.

150

3





10

Switching Characteristics. t

ens)

, ~ts

-c---

--

----+

,I'--.. 10

6

~ :---'

I--.

t,

f-----

d

,

=R=

---

-r--. //

"",,1-:::::: __ "'"'i

t (ns)

~=

- I - f-

r-- r--

I

'PO ~

!

I

--

G 3156

, 6

I

10

-

,

(rnA)

Switching Characteristics. G- '50 ,

6

Ie

10'

-

i--

P-

~ ;:::.::: I--

,

~-

-'S I

f--

~

-~

i-i--

;.-- .....--~ 'i;"

~ F--

_.

i--

--- r--

6

td

Ie

IC=10ISi=-IOISl

--

f--

8~ - ~-=

=SOOmA

2 IS1 =-18Z= SOmA

V(C=30V

Vee'30V

.I 100

200

400

600

Ie (mAl

-50

50

100

3/4

387

2N4014 Test Circuit for lon, tofl.

+97~VINt1.0

F

621l. 5 - 4610

PULSE GENERATOR: Ir, If < 1.0 ns PW= 1.0~s liN; 500 DC<2%

4/4

388

TO OSCILLOSCOPE: tr= 1.0 ns liN> 100 KO

2N4030·2N4031 2N4032·2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030, 2N4031 , 2N4032, and 2N4033 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal, low noise industrial applications.

TO-39


::4: ABSOLUTE MAXIMUM RATINGS Symbol

Parameter

Value 2N4030 2N4032

2N4031 2N4033

Unit

VCBO


- 60

- 80

V

V CEO


- 60

- 80

V

VEBO


-5

Collector Current

-1

A


0.8

4

W W

- 65 to 200

°C

Ic Ptot T stg , T j October 1988


V

1/4

389

2N4030-2N4031-2N4032-2N4033 THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Max Max


Parameter

Test Conditions


ICBo

Min.

For 2N4030 and 2N4032 VCB =- 50 V VCB=-50V T amb = 150°C For 2N4031 and 2N4033 VCB =- 60 V VCB=-60V T amb = 150°C

Typ.

Max.

Unit

- 50 - 50

nA iJA

- 50 - 50

nA iJA


Ic=-10iJA For 2N4030 and 2N4032 For 2N4031 and 2N4033

- 60 - 80

V V


Ic=-10mA For 2N4030 and 2N4032 For 2N4031 and 2N4033

- 60 - 80

V V

V(BR)EBO

IE = -10 iJA

-5

V

VCE(sal)

.

Emitter-base Breakdown Voltage (Ie = 0) Collector-emitter Saturation Voltage

- 0.15 - 0.5

V V

-1

V

VBE(sal)

.

Ic =-150 mA IB=-15mA IB =- 50 mA Ic =- 500 mA Ie =-1 A IB =- 100 mA For 2N4030 and 2N4032


Ic =-150 mA IB=-15mA Ie =- 500 mA IB =-50mA IB =-100 mA Ic =-1 A For 2N4030 and 2N4032

- 0.9 -1.1

V V

-1.2

V

DC Current Gain

Ic=-100iJA VCE=-5V For 2N4030 and 2N4031 For 2N4032 and 2N4033 Ic=-100mA VCE=-5V For 2N4030 and 2N4031 For 2N4032 and 2N4033 Ie =- 500 mA VCE=-5V For 2N4030 and 2N4031 For 2N4032 and 2N4033 Ic =-1 A VCE=-5V For 2N4030 For 2N4031 For 2N4032 For2N4033 Ic =- 100 mA VeE=-5V Tamb = - 55°C For 2N4030 and 2N4031 For 2N4032 and 2N4033

V(BR)CBO

V(BR)CEO

hFE

.

.

• Pulsed: pulse duration •• See test circuit.

2/4

390

= 300

ms, duty cycle

=t

%.

30 75 40 100 25 70 15 10 40 25

15 40

120 300

2N4030-2N4031-2N4032-2N4033 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter Transition Frequency

IT

Min.

100 150

Typ.

Max.

Unit

400 500

MHz MHz

CEBO


Ic = 0 1=1 MHz

VEB =- 0.5 V

110

.pF

CCBO


IE = 0 1=1 MHz

VCB = - 10 V

20

pF

ts **

Storage Time

Ic =- 500 mA Vcc=-30V IBl =-IB2 =-50 mA

350

ns

tf*'

Fall Time

Ic =- 500 mA Vcc=-30V IBl =-IB2=-50mA

50

ns

Turn-on Time

Ic =- 500 mA Vcc = - 30 V IBl = - IB2 = - 50 mA

100

ns

ton *'

•

Test Conditions Ic =- 50 mA VCE=-10V 1=100MHz For 2N4030 and 2N4031 For 2N4032 and 2N4033


=

300 ms. duty cycle

1 %.

=

** See test circuit.


Collector-emitter Saturation Voltage. G

G 3196

J195

-VCE(sat )

IV)

-VBE(sat )

I

--

f----- -

-lc=-10Ie

I---'

I

h~ ~ ~c

0.2

I

c--

--

'II

I II

III

-

---

-Ie

10'

10

6

6

8 (rnA)

T

, I ,

,

!

i

I

1 I

Ii

-Ie

(rnA)

I

10'


Transition Frequency. ('319711

C.-3198

I

'T

I

(MHz)

~-

I

,

160

-.......

I

I, II

,.......

-I-

I

V

120

II

IV

!II

!

j.

l-

i

f--

10

~""

80 I

'V, T I

-I40

j

I 6 ,I

B

10

' i

: ,I liT

:

I -lelO I. III I

0.2 ' - -

,

B

kr ' I

H1T125'C ~, .~~

t

1'1 6

11": n;'

=-55-£-+, IT 25 'c l.-+-

Tamb

0.8

0.6

,

i

I

f----

lamb = 125 G C-=;z 25°C

I

i

0.6

0.4

,

I

1.2

0.8

!HH

I

I V)

V

I

1,

It =ICO MHz VCE =-lOV

i 6 8

10

, I , 6'

10'

-

I I, I

I

JIJ II, I6' -'C(mA)

IE =0

10-'

10

-veB (V )

3/4

391

2N4030·2N4031 ·2N4032·2N4033 Test Circuit for ton, ts, !t. VSS=+4.1V

U

vIN

Vee

=-30V

t~O,.u:

- 10

62.!l

s- 4617 PULSE GENERATOR: Ir, If < 20 ns PW = 1.0!lS liN = 50 Q DC<2%

4/4

392

TO OSCILLOSCOPE: Ir~ 10 ns liN> 100 KQ

2N4035 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4035 is a silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, primarily intended for small signal, low noise industrial applications.

TO-18


::4: 5-6896


Parameter

Value

Unit

VCBO


- 40

VCEO


- 40

V

VEBO


-5

V

-100

rnA

0.36 1

W W

- 65 to 200

°C

Ic Ptot T stg , Tj October 1988

Collector Current Total Power Dissipation at T amb " 25°C at T case " 25°C Storage and Junction Temperature

V

1/3

393


Max Max


Parameter

Test Conditions

Min_

Max.

Unit

-15 -15 - 40

nA J.!A V

Ic=-10J.!A

- 40

V

Collector-Emitter Breakdown Voltage (Is = 0)

Ic=-10mA

- 40

V

V(SR)ESO

IE=-10J.!A

-5

V

VCE(sat)

.

Emitter-Base Breakdown Voltage (Ic = 0) Collector-Emitter Saturation Voltage

Is =- 0.1 rnA Is =-1 rnA Is =- 5 rnA

VSE(sat)

.

Ic=-1mA Ic=-10mA Ic =- 50 rnA


Ic =- 1 rnA Ic=-10mA Ic =- 50 rnA

Is =- 0.1 rnA Is =- 1 rnA Is =- 5 rnA

Ic =-10 J.!A Ic =-100 J.!A Ic=-1mA Ic=-10mA Ic=-50mA Ic=-10mA Tamb = - 55°C

VCE=-1V VCE=-1V V cE =-1V VCE =- 1 V VCE=-1V VCE =-1 V

Collector Cutoll Current (VSE = 0)

VCE =- 30 V VCE =- 30 V

V(SR)CSO


Ic =-10J.!A

V(SR)CES


ICES

V(SR)CEO

hFE

.

.

DC Current Gain


Ic=-1mA 1=1 kHz

VCE=-10V

IT


Ic=-10mA 1= 100 MHz

VCE =- 20 V

Ic = 0 1=1 MHz

VES =- 0.5 V

IE = 0 1=1 MHz

Vcs=-10V

Ic=-1mA 1=100MHz

VCE=-5V R g =1000

Ic=-50mA 1st =-5 rnA

Vcc =- 30 V

Ccso NF ton toff hie

Emitter-base Capacitance Collector-base Capacitance Noise Figure Turn-on Time Turn-olf Time Input Impedance

• Pulsed: pulse duration = 300 j.ls. duty cycle = 1 %.

394

- 0.7 70 140 150 150 30

150

V V V

- 0.75 - 0.9 -1.1

V V V

300

450 MHz

450 pF 5.5 pF 3.5 dB 6 ns 40 ns

Ie =- 50 rnA Vce =- 30 V 1st =-l s2 =-5mA Ic=-1mA 1=1 kHz

- 0.13 - 0.14 - 0.3

70

hfe

CESO

2/3

Tamb = 125°C

Typ-

150 kO

VCE=-1OV 4

12

2N4035 ELECTRICAL CHARACTERISTICS (continued) Symbol

Parameter

Test Conditions

hr.


Ic=-1mA f = 1 kHz

VCE=-10V

hoe

Output Admittance

Ic = -1 mA f = 1 kHz

VCE=-10V

Ic =- 10 mA f = 80 MHz

VCE =- 20 V

rbb'Cb,c


Min.

Typ.

Max.

Unit

4x10- 4

!-IS

8

40 ps 40

3/3

395

2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general purpose amplifier.

TO-39


::4: ABSOLUTE MAXIMUM RATINGS Symbol

Parameter

= 0)

VCBO


VCEX


VCER

Collector-emitter Voltage (RBE ,; 200 0)

VCEO


V EBO


Ic IB P'o' TS'g, Tj October 1988

= 1.5

V)

= 0)

= 0)

Collector Current Base Current Total Power Dissipation at T amb ,; 25 DC at T case'; 25 DC Storage and Junction Temperature

Value

Unit

- 90

V

- 85

V

- 85

V

- 65

V

-6

V

-1

A

- 0.5

A

1 7

W W

- 65 to 200

°C 1/3

397


Max Max


Max.

Unit

ICBo


VCB=-60V

- 20

nA

ICEO


VCE=-30V

- 0.5

j.lA

lEBO


VEB = - 5 V

- 20

nA

V(BR)CBO


Ic=-100j.lA

- 90

V

V(BR)CEX *

Collector-emitter Breakdown Voltage (V BE = 1.5 V)

Ic=-10mA

- 85

V

V(BR)CER *

Collector-emitter Breakdown Voltage (RBE = 200 Q)

Ic = - 10 mA

- 85

V

V(BR)CEO *


Ic=-10mA

- 65

V

V(BR)EBO


IE =-100 j.lA

-7

V

VCE(Sal) *


Ic =-150 mA

IB = - 15 mA

VBE *


Ic =-150 mA

VCE=-10V

hFE *

DC Current Gain

Ic =- 0.1 mA Ic =- 150 mA Ic =- 500 mA


Ic = - 50 mA f = 20 MHz

VCE=-10V

Ic = a f = 1 MHz

VEB = - 0.5 V

IE = a f = 1 MHz

VCB=-10V

Ic =- 150 mA IBI =-15 mA

Vcc = - 30V

fT CEBO CCBO ton ** toft **

Parameter

Transition Frequency Emitter-base Capacitance Collector-base Capacitance Turn-on Time Turn-off Time

* Pulsed: pulse duration ** See test circuit.

2/3

398

Test Conditions

=

300 fls, duty cycle

1 %.

20 40 20

Typ.

- 0.65

V

-1.1

V

140 MHz

60 pF 90 pF 30

Ic =- 150 mA Vcc=-30V IBI =-IB2 =-15 mA =

Min.

ns 110 ns 700

2N4036 Test Circuit for ton, toft. +V BB ::: 4V

-30V

Adjust IB1:162

?

Output to oo;,cilloo;,cope Z = 106n.

Output to oscilloo;,cope Z =10 6 0.

ern =20pF

Cin=20pF

ruT -O.65V-/\

f = 10KHz t r :!S10ns

-30vl Input -pulse wave form

5- 4631

~

lit.""!I

SGS-THOMSON

L

Output-pulse wave form

3/3

rnIilOlClIiIiiliUlC'ii"lIi@[!I]OICIII

399

2N4037 MEDIUM SPEED SWITCH DESCRIPTION The 2N4037 is a silicon planar epitaxial PNP transistor in a Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general purpose amplifier.

TO-39


:~: ABSOLUTE MAXIMUM RATINGS Symbol

Value

Unit

VCBO


- 60

V

VCEO


- 40

V

VCER


- 60

V

VCEV

Collector-emitter Voltage (VBE = 1.5 V)

- 60

V

VEBO


-6

V

Collector Current

-1

A

Ic IB P tot T stg , T j

Parameter

Base Current Total Power Dissipation at T amb

"

25°C


November 1988

- 0.5

A

7

W

- 65 to 200

°C

1/2

401



Parameter

=

Max Max


Min.

Typ.

Max.

Unit

ICBo


VCB=-60V

- 250

nA

ICEO


VCE = - 30 V

-5

IlA

lEBO

Emitter Cutoff Current (Ie = 0)

VEB=-5V

- 1

IlA

VEBO


IE =- 100 IlA

-7

V

VeBO


Ic =- 100 IlA

- 60

V


Ic =-10mA

- 40

V


Ie = - 150 mA

IB = - 15 mA

V(BR)CEV'


Ic = - 10 mA

VBE = 1.5 V

- 60

V

V(SR)CER'


Ic = - 10 mA

RSE =200 Q

- 60

V

V(BR)CEO VCE(Sat)

VBE hFE

.

.

hIe

.

.

Ie = 0

-1.4


Ie =- 150 mA

VCE = - 10 V

DC Current Gain

Ic =- 1 mA Ic =- 150 mA

VeE=-10V VCE=-10V

15 50

- 1.5


Ie =- 50 mA f = 20 MHz

VCE=-10V

3

V

V

250

CeBo

Collector-base Capacitance (IE = 0)

Vcs=-10V

30

pF

CEBO

Emitter-base Capacitance (IE = 0)

VEB = - 0.5 V

90

pF


2/2

402

=

300

~s,

duty cycle

=

1,5 %.

2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications.

TO·39


c

E


Value

Unit

Vcso


40

V

VCEO


20

V

VEBO


3.5

V

Collector Current

0.5

A

Total Power Dissipation at T case ~ 25°C

3.5

W

- 65 to 200

°C


Parameter


1/3

403

2N4427-BFR98 THERMAL DATA

I Rth i-case I Thermal Resistance Junction-case

Max

50

°C/W

ELECTRICAL CHARACTERISITCS (T amb = 25 'C unless otherwise specified) Parameter

Symbol

Test Conditions


ICED

Min.

Typ.

Max.

Unit

20

JlA

VCE=12V


Ic = 100


JlA

40

V

Ic = 5 mA

20

V

Collector-Emitter Sustaining Voltage (RBE = 10 0)

Ic = 5 mA

40

V

V(BR)EBO


IE =100

3.5

V

VCE(sa!)'


Ic =100 mA

IB =20 mA

DC Current Gain

Ic =100 mA Ic =360 mA

VCE = 5 V VCE = 5 V


Ic =50 mA f = 200 MHz

VCE=15V

IE = 0 f = 1 MHz

VCB = 12 V

V(BR)CBO VCEO(sus) VCER(sus)

hFE

,

fT CCBO

, ,

JlA

0.5 10 5

200

500

MHz

Collector-base Capacitance 4

Po **

Output Power

Vce = 12 V f = 175 MHz

P 1 =100mW

11"

Collector Efficiency

Vcc = 12 V f=175MHz

Po = 1 W

RF Output Power.

W

50

%

Collector-base Capacitance. 3347

G-l]1o

Po (W)

1.6

f=lMHz

Pi =1o mW 1.2

l'

c '!'" U

.,.". ..,.".

0.8

lOmW

0..

100

404

200

JOO

'00

f( ..H

o

pF

1

• Pulsed: pulse duration = 300 !is, duty cycle = 1 %. ** See test circuit.

2/3

V

16

2.

32

VeslV)

2N4427-BFR98 TEST CIRCUIT

I

Test Circuit for Power Output Measurement (f = 175 MHz).

I

r

C4

",- 3016/1

C1. C2, C3, C4 = 3 + 30 pF C5 = 1000 pF C6 = 20 kpF R1 = 10W

L1 = 2 turns 16 wire, 3/16" 10, 1/4" long L2 = ferrite choke, Z = 450 W L3 = 2 turns 16wire, 1/4" 10, 1/4" long L4 = 4 turns 16 wire, 3/8" 10, 3/8" long

3/3 405

2N5109 EPITAXIAL PLANAR NPN CATV ULTRA-LINEAR HIGH GAIN TRANSISTOR The 2N51 09 is a multi-emitter silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860 MHz).

TO-39


c B

E


Unit

VCBO


Parameter

40

V

VCER

Collector-emitter Voltage (RBE ., 100)

40

V

VCEO


20

V

VEBO


3

V

A

Symbol

Ic

Collector Current

0.4

IB

Base Current

0.4

A

Total Power Dissipation at T amb ., 25°C at T case" 75°C

1 2.5

W W

- 65 to 200

°C

Ptot T 51g, Tj October 1988


1/3

407

r


175 50

Max Max


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

5 5

mA mA

VCE=15V

20

~

VEB = 3 V

0.1

mA

Collector Cutoff Current (VBE =- 1.5 V)

VCE =35 V VCE=15V

ICEo


lEBo

Emitter Cutoff Current (Ic = 0) Collector-base Breakdown Voltage (IE = 0)

Ic =0.1 mA

40

V

Collector-emitter Sustaining Voltage (RBE = 10 Q)

Ic = 5 mA

40

V


Ic =5 mA

20

V


ICEx

V(BA) CBO VCEA

(sus)

VCEO VCE

(sus)

(sat)

,

T amb = 150°C

Ic=100mA

IB = 10 mA

DC Current Gain

Ic = 50 mA Ic = 360 mA

VCE=15V VCE = 5V


Ic = 50 mA f = 200 MHz

VCE=15V


IE = 0 f = 1 MHz

VCB=15V

NF

Noise Figure

le=10mA Rg = 50 Q

VeE=15V f = 200 MHz

G pe

Power Gain (see test circuit)

Ie = 10 mA f = 200 MHz

VeE=15V PI=-10dBm

hFE

,

fT CCBO

, Pulsed: pulse duration

=

300 fls, duty cycle

=

0.5 70 5 1.2

3 11

TEST CIRCUIT Test Circuit for Power Gain Measurement (f = 200 MHz). 3';'15pF

3.;.15 pF

2/3

408

GHz 3.5

1 %.

V

210

pF dB dB

2N5109 High Frequency Current Gain.

Power Gain

h,eL-.J

(dB)

-

-_.-

'4 13

/'"

f----/ - - --~-------

l

G 1616

'~f:12

Collector Current.

Gp

VeE·~ 1S'"V-i--r---1-

'4

VS.

12

f =200MHz . . .CE =15'1

r---

--.l+

---

-

..

-

_-

I

--

-

-

f--

--

-------

"

--

10 10 2

10

20

Ie (mA)

Input Impedance 811 e (normalized 50 Q).

40

GO


G -3389

-90·

Reverse Transfer Coefficient 812e. 90'

Output Impedance 822e (normalized 50 Q). G-3390

G-3387

'BO'I--+-+--+--+---t"-p"-t"

-,

-90·

Iiii SCS-11tOMSON ':"JI ~U©IRI@~~I<©'irIRl@Il9U©!l

3/3

409

I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz.

TO-72


c B

E

ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Ie Ptot T stg , Tj October 1988

Parameter

Value

Unit

= 0) Collector-ermitter Voltage (IB = 0) Emitter-base Voltage (Ic = 0)

2.5

V

Collector Current

50

mA

Total Power Dissipation at T amb <; 25°C at Tease <; 25°C

200 300

mW mW

- 65 to 200

°C



20

V

12

V

1/2

411


Max Max

583 875


Parameter

Test Conditions

Min.

Typ.

Max.

Unit

20 1

nA IlA


VCB=15V VCB=15V

V(BR) CBO


Ic = 1 jlA

20

V

VCEO(sus)

Collector -em itter Sustaining Voltage (IB = 0)

Ic = 3 mA

12

V


IE=10jlA

2.5

V

VCE (sat)


Ic = 10 mA

IB = 1 mA

0.4

V

VBE(sat)

Base-emitter Saturation Volt~ge

Ic = 10 mA

IB = 1 mA

1

V

hFE

DC Current Gain

Ic = 3 mA

VCE = 1 V

hIe


Ic = 2 mA f = 1 kHz

VCE = 6 V

IT


Ic = 5 mA 1= 100 MHz

VCE = 6 V

C re

Reverse Capacitance

Ic = 0 1=1 MHz

VCE = 6 V

NF

Noise Figure

Ic=1.5mA 1= 200 MHz

VCE = 6 V Rg=125Q

G pe

Power Gain (neutralized)

Ic = 5 mA 1=200 MHz

VCE=12V Rg = 50 Q

Oscillator Power Output

Ic = 12 mA 1=500 MHz


Ic = 2 mA I =31.9 MHz

ICBo

V(BR)EBO

Po rbb,Cb·c

2/2 412

.

Tamb = 150°C

25

70

250

25

90

300

0.9

1.4

2

GHz

0.7

1

pF

3

4.5

dB

15

dB

21

VCB=10V mW

20 VCB = 6 V 3

7

14

ps

2N5320 2N5321 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5320 and 2N5321 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments. The complementary PNP types are respectively the 2N5322 and 2N5323.

TO-39


c B

E


Symbol

= 0)

VCBO


VCEV


VCEO


VEBO


= 1.5 V)

= 0)

= 0)

Value

Unit

2N 5320

2N5321

100

75

V

100

75

V

75

50

V

6

5

V

A

Ic

Collector Current

2

IB

Base Current

1

A

Total Power Dissipation at T amb :s; 25°C at T case :s; 25°C

1 10

W W

- 65 to 200

°C



1/2

413


17.5 175

Max Max

ELECTRICAL CHARACTERISTICS(T case = 25 "C unless otherwise specified) Symbol

Parameter

ICBo

lEBO

V(BR)CEV

V(BR)CEO

.

V(BR)EBO

VCE(sa!)

.

VBE

hFE

.

.

For 2N5320 VCB =BOV For 2N5321 VCB = 60 V


For 2N5320 VEB = 5 V For 2N5321 VEB = 4 V

Collector-emitter Breakdown Voltage (VBE = 1.5 V)

Ic =0.1 mA

Collector-Emitter Breakdown Voltage (IB = 0)

Ic = 10 mA


IE =0.1 mA


Ic = 500 mA

Base-Emitter Voltage

Ic = 500 mA

DC Current Gain

For2N5320 Ic = 500 mA Ic = 1 A For 2N5321 Ic =500 mA

>tA

5

>tA

0.1

j.lA

0.5

j.lA

75 50

V V

For2N5320 For 2N5321

6 5

V V

Is = 50 mA For2N5320 For 2N5321

O.B

V V

VCE = 4 V For 2N5320 For 2N5321

1.1 1.4

V V

VCE = 4 V VCE = 2 V

0.5

30 10

130

250

40 50

ton

Turn-on Time

Ic = 500 mA IS1 = 50 mA

Vcc=30V

toll

Turn-off Time

Ic = 500 mA Vcc=30V IS1 =-ls 2 = 50 mA 1 %.

~

0.5


VCE = 4 V f=10MHz

=

Unit

V V

VCE = 4 V

300 .us. duty cycle

Max.

100 75

Ic = 50 mA

=

Typ.

For 2N5320 For 2N5321


A."'!I 414

Min.

fT


2/2

Test Conditions

Collector Cutoff Current (I E = 0)

SCS-1lI0MSON UI;lllli:liI@rn~rnli:1i"IiI@IIlDIi:$

MHz

BO

ns

BOO

ns

2N5322 2N5323 MEDIUM-POWER AMPLIFIERS DESCRIPTION The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial and commercial equipments.

TO-39


c

:~:

E

S_S896


Value

Parameter

= 0)

Vcso


VCEV


VCEO


VESO


= 1.5 V)

= 0)

= 0)

Unit

2N5322

2N5323

- 100 -100

-75

V

-75

V

-75

- 50 -5

V

-6

V

Ie

Collector Current

-2

Is

Base Current

-1

A

1 10

W W

- 65 to 200

DC



" "

25 DC 25 DC


A

1/2

415

I

..

I


Max Max

17.5 175

ELECTRICAL CHARACTERISTICS(T case = 25 'C unless otherwise specified) Symbol

Parameter

ICBO

lEBO

V(BR)CEV

V (BR)CEO

.

V(BR)EBO

VCE(sat)

.

VBE

hFE

.

.

For 2N5322 VCB = - 80 V For 2N5323 VCB = - 60 V


For 2N5322 VEB = - 5 V For2N5323 VEB =-4 V

Collector-emitter Breakdown Voltage (VBE=1.5V)

Ic=-0.1mA


Ic =- 10 mA


IE = -0.1 mA


Ic = - 500 mA


Ic = - 500 mA

DC Current Gain

Unit

- 0.5

f.lA

-5

I1A

- 0.1

f.lA

- 0.5

I1A V V

For 2N5322 For2N5323

-75 - 50

V V


-6 -5

V V

IB =- 50 mA For 2N5322 For 2N5323

- 0.7 - 1.2

V V

VCE=-4V For 2N5322 For 2N5323

- 1.1 -1.4

V V

VCE=-4V VeE =-2 V

30 10

130

250

VeE=-4V

40

VCE=-4V

50

ton

Turn-on Time

Ic =- 500 mA IB1=-50mA

Vcc=-30V

= 300 fls. duty cycle = 1 %.

Max.

- 100 - 75

Ic = - 50 mA f=10MHz

Turn-off Time

Typ.

For 2N5322 For 2N5323


• Pulsed. pulse duration

416

For2N5322 Ie =- 500 mA Ie =- 1 A For2N5323 Ic = - 500 mA

Min.

h

toff

2/2

Test Conditions


Ie =- 500 mA Vcc = - 30 V IB1 =-IB2=-50mA

MHz ns 100 ns 1000

2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications.

TO-39



Parameter

Vcso


VCEO


VESO


=

=

0) =

0)

0)

ICM


Ptot


T stg , T J October 1988

25 "C <; 25°C

<;


Value

Unit

- 200

V

- 200

V

-4

V

1

A

1 10

W W

- 55 to 200

°C 1/2

417

2N5415S THERMAL DATA Thermal Resistance Junction-case Thermal Resistance Junction-ambient

ELECTRICAL CHARACTERISTICS (T amb Parameter

Symbol

=

Max Max

17.5 175


Typ.

Max.

Unit

ICBo


VCB=-175V

- 50

j.lA

ICEO

Collector Cutoff Current (lB = 0)

VCE=-150V

- 50

JlA

lEBO


V EB = - 4 V

- 20

JlA

V(BR)CEO

VCE(Sa') VBE hFE

. .

fr CCBO

.

.


418

- 200

Ic = -- 2 mA

V


Ic = - 50 mA

IB =- 5 mA

- 2.5

V

Base-Emitter Voltage

Ic =-50 mA

VCE=-10V

- 1.5

V

DC Current Gain

Ic =- 50 mA

VCE=-10V


Ic = - 10 mA f = 5 MHz

VCE=-10V

IE = 0 f = 1 MHz

VCB=-10V


• Pulsed: pulse duration = 300 fls. duty cycle

2/2

Min.

=

1 %.

30

150

15

MHz

15

pF

PACKAGES

419

I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I

PACKAGE TO·72

MECHANICAL DATA

DIMENSIONS mm

A B

inches

min

max

-

5.3

-

12.7

min'

max 0.208

-

0.500

C

-

5.8

-

0.228

D

-

4.9

-

0.193

E G

1.16 0.49

0.045 0.019

H

typo 45°

typ.45°

L

typ.2.54

typ.0.100

pin 1: EMITIER - pin 2: BASE pin 3: COLLECTOR - pin 4: SHIELD

421

PACKAGES TO-39

,,#J MECHANICAL OAT A

DIMENSIONS

inches

mm min

max

min

A

-

6.6

-

B C D E

12.7

F G H L

-

-

-

9.4 8.5 0.9 1.2 0.49

45° typ 5.08 typ

0.500

max 0.260

-

-

0.370 0.334 0.035 0.047 0.019 45° typ 0.200 typ

pin 1: Emitter - pin 2: Base - pin 3: Collector

422

PACKAGE TO-18

MECHANICAL DATA

DIMENSIONS mm

inches

min

max

min

A

-

max.

5.3

-

0.208

B

12.7

-

0.500

-

C

-

5.8

-

0.228

D

-

4.9

-

0.193

1.16

-

0.045

0.49

-

E G

0.019

H

typ.45°

typ.45°

L

typ.2.54

typo 0.100

pin 1: Emitter - pin 2: Base - pin 3: Collector

423

PACKAGES SOT-32

. " MINIATURE PACKAGE WITH REVERSED TO-220 PINOUT

,

1 2

3

MECHANICAL OAT A

DIMENSIONS mm min A

B C

D E F G

H M P(-0304/1

L M N

P

inches max

7.8 10.8 2.7 0.9 2.2 typo 0.49 0.75 4.4 typo 2.54 typo 15.7 typo 1.2 typo 3.8 typo 3.0 3.2

7A 10.5 2.4 0.7

min 0.295 0.413 0.094 0.027 0.087 0.019 0.173 0.100 0.618 0.047 0.149 0.118

max 0.307 0.425 0.106 0.035 typo 0.029 typo typo typo typo typo 0.126

pin 1: Emitter - pin 2: Collector - pin 3: Base

*: WITHIN THIS REGION THE CROSS-SECTION OF THE LEADS IS UNCONTROLLED

424

PACKAGE SOT-23

MECHANICAL DATA

DIMENSIONS

inches

mm

p

I----B----I

PC-0300

min

max

min

max

A

0.93

1.04

0.036

0.041

B

2.8

3

0.110

0.118

C

1.2

1.4

0.047

0.055

D

2.1

2.5

0.082

0.098

E

1.9

2.05

0.074

0.080

F

0.95

1.05

0.037

0.041

G

0.45

0.60

0.017

0.023

H

0.15

-

0.006

-

L

0.065

0.115

0.003

0.004

M

0.013

0.1

0.0005

0.004

N

0.06

-

0.003

P

0.45

0.6

0.017

0.023

R

0.37

0.46

0.014

0.018

-

pin 1: Emitter - pin 2: Base - pin 3: Collector .

425

NOTES

NOTES

NOTES

NOTES

SALES OFFICES

EUROPE DENMARK

ITALY

2730 HERLEV Herlev Torv, 4 Tel. (45-42) 94.85.33 Telex: 35411 Telelax: (45-42) 948694

20090 ASSAGO (MI) V.le Milanoliori - Strada 4 - Palazzo N4/A Tel. (39-2) 89213.1 (10 linee) Telex: 330131 - 330141 SGSAGR Telelax: (39-2) 8250449

FINLAND

40033 CASALECCHIO 01 RENO (BO) Via R. Fucini, 12 Tel. (39-51) 591914 Telex: 512442 Telelax: (39-51) 591305

LOHJA SF-08150 Karlalankatu, 2 Tel. 12.155.11 Telelax. 12.155.66

FRANCE 94253 GENTILLY Cedex 7 - avenue Gailleni - BP. 93 Tel.: (33-1) 47.40.75.75 Telex: 632570 STMHQ Telelax (33-1) 47.40.79.10 67000 STRASBOURG 20, Place des Hailes Tel. (33) 88.75.50.66 Telex: 870001 F Telelax: (33) 88.22.29.32

00161 ROMA Via A Torlonia, 15 Tel. (39-6) 8443341 Telex: 620653 SGSATE I Telelax: (39-6) 8444474

NETHERLANDS 5652 AR EINDHOVEN Meerenakkerweg 1 Tel.: (31-40) 550015 Telex: 51186 Telelax: (31-40) 528835

SPAIN GERMANY 6000 FRANKFURT G utleutstrabe 322 Tel. (49-69) 237492 Telex: 176997689 Telelax: (49-69) 231957 Teletex: 6997689~STVBP 8011 GRASBRUNN Bretonischer Ring 4 Neukelerloh Technopark Tel.: (49-89) 46006-0 Telex: 528211 Telelax (49-89) 4605454 Teletex: 897107~STDISTR 3000 HANNOVER 1

Eckenerstrasse 5 Tel. (49-511) 634191 Telex 175118418 Teletex: 5118418 cslbeh Telelax: (49-511) 633552 8500 NURNBERG 20 ErlenstegenstrasS8, 72

Tel.: (49-911) 59893-0 Telex: 626243 Telelax: (49-911) 5980701 5200 SIEGBURG Franklurter Str 22a Tel. (49-2241) 660 84-86 Telex 889510 Telelax. (49-2241) 67584 7000 STUTTGART Oberer Kirchhaldenweg 135 Tel. (49-711) 692041 Telex: 721718 Teielax: (49-711) 691408

08021 BARCELONA Calle Platon, 64 th Floor, 5- Door Tel. (34-3) 4143300-4143361 Telelax: (34-3) 2021461 28027 MADRID Calle Albacete, 5 Tel. (34-1) 4051615 Telex 27060 TCCEE Telefax: (34-1) 4031134

SWEDEN S-16421 KISTA BorgarfJordsgatan, 13 - Box 1094 Tel. (46-8) 7939220 Telex 12078 THSWS Telefax: (46-8) 7504950

SWITZERLAND 1218 GRAND-SACONNEX (GENEVA) Chemin Francois-Lohmann, 18/A

Tel. (41-22) 7986462 Telex: 415493 STM CH Telefax: (41-22) 7984869

UNITED KINGDOM and EIRE MARLOW, BUCKS Planar House, Parkway Globe Park Tel. (44-628) 890800 Telex: 847458 Telefax (44-628) 890391

SALES OFFICES

AMERICAS

ASIA / PACIFIC

JAPAN

BRAZIL

AUSTRALIA

05413 sAo PAULO R. Henrique Schaumann 286-CJ33 Tel. (55-11) 883-5455 Telex (391 )11-37988 "UMBR BR" Telelax: 11-551-128-22367

NSW 2027 EDGECLIFF Suite 211, Edgecliff centre 203-233, New South Head Road Tel. (61-2) 327.39.22 Telex 071 126911 TCAUS Telelax: (61-2) 327.61.76

TOKYO 108 Nisseki - Takanawa Bid. 4F 2-18-10 Takanawa Minato-Ku Tel. (81-3) 280-4121 Telelax: (81-3) 280-4131

CANADA BRAMPTON, ONTARIO 341 Main Sl. North Tel. (416) 455-0505 Telelax: 416-455-2606

U.S.A. NORTH & SOUTH AMERICAN MARKETING HEADQUARTERS 1000 East Bell Road Phoenix, AZ 85022 (1 )-(602) 867-6100

CHINA BEIJING Liason Office Beijing No.5 Semiconductor Device Factory 14 Wu Lu Tong Road Da Sheng Man Wai Tel. (861) 2024378 Telex 222722 STM CH

HONG KONG

ALABAMA Huntsville - (205) 533-5995

WANCHAI 22nd Floor - Hopewell centre 183 Queen's Road East Tel. (852-5) 8615788 Telex: 60955 ESGIES HX Telelax: (852-5) 8656589

ARIZONA Phoenix - (602) 867-6340

INDIA

SALES COVERAGE BY STATE

CALIFORNIA Santa Ana - (714) 957-6018 San Jose - (408) 452-8585 COLORADO Boulder (303) 449-9000 ILLINOIS Schaumburg - (708) 517-1890 INDIANA Kokomo - (317) 459-4700 MASSACHUSETTS Lincoln - (617) 259-0300 MICHIGAN Livonia - (313) 462-4030 NEW JERSEY Voorhees - (609) 772-6222 NEW YORK Poughkeepsie - (914) 454-8813 NORTH CAROLINA Raleigh - (919) 787-6555 TEXAS Carrollton - (214) 466-8844 FOR RF AND MICROWAVE POWER TRANSISTORS CONTACT THE FOLLOWING REGIONAL OFFICE IN THE U.S.A. PENNSYLVANIA Montgomeryville - (215) 362-8500

NEW DELHI 110001 LiasonOffice 62, Upper Ground Floor World Trade Centre Barakhamba Lane Tel. 3715191 Telex: 031-66816 STMIIN Telelax: 3715192

MALAYSIA PULAU PI NANG 10400 4th Floor Suite 4-03 Bangunan FOP-123D Jalan Anson Tel. (04) 379735 Telelax (04) 379816

KOREA SEOUL 121 8th lloor Shinwon Building 823-14, Yuksam-Dong Kang-Nam-Gu Tel. (82-2) 553-0399 Telex: SGSKOR K29998 Telelax: (82-2) 552-1051

SINGAPORE SINGAPORE 2056 28 Ang Mo Kio - Industrial Park 2 Tel. (65) 4821411 Telex: RS 55201 ESGIES Telelax: (65) 4820240

TAIWAN TAIPEI 12th Floor 571, Tun Hua South Road Tel. (886-2) 755-4111 Telex: 10310 ESGIE TW Telelax: (886-2) 755-4008

I:

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informations previously supplied. Cover design by Keit & Koppel. Segrate, Italy Typesetting and layout on Desk Top Publishing by AZIMUT, Henin Bt., France Printed by Garzanti, Cernusco S.lN., Italy

© 1990 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The NetherlandsSingapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.

1989 Small Signal Transistors 1ed

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