Design and Simulation of 80 kHz High Frequency Converter Using CD 4047IC CMOS

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Design and Si ulation of 80 kHz High Freq ency Conver er Using CD 4047IC CMOS 1

2

Mary Htun , Soe Winn , Win Moet Moet Htwe

3

1

Student, �Professor, �Assistant Lecturer Dep Departme tment of of Ele Elecctri tri al Power Engineering, Pyay Technological Uni versity The Republic of the Union of Myanmar ABSTRACT The electrical power appliances which onvert source frequency to another frequency level is known as freque quency ncy conver nverte terr. This research rch pro posed a novel design method to achieve the 80 kHz igh frequency conv conver erte ter. r. In this this desi design gn,, the the circ circui uits ts h ve been made which contains step-down transformer, i nverter circuit using MOSFETs, CD 4047IC and step-up transfor transformer. mer. Single Single phase phase source source is use use d as a source. Therefore ore, th the rreectification is used to c onvert the AC source to DC source and to supply the 12V by using voltage regulator. Inverter is used to onvert DC to AC. Circuit simulation was done by using Proteus software. OSFET high Keywords: Analog RC oscillation, frequency switching, single pha e frequency converter, full bridge power recti ication, high frequency transformation

I. INTRODUCTION The researc research h focuses focuses to design design singl singl e phase high frequen frequency cy applian appliance, ce, which which necessar necessar y to process elec lectrica ricall power wer to suit variou ious appli ppli ances used in environments where dissimilar fre quencies are mandatory[1].Solid state power r frequency conv conver erte ters rs are are use used d for for conv conver erti ting ng 50 50 z utility line power to high frequency power. Many varied appl applic icat atio ions ns like like swit switch chin ing g mod modee po po wer supplies, melting machine, radar, and c ommunication equipment and so on. Major issue of using melting machin machinee can can oper operate ate at high high frequ frequen en cy instead of conve conventi ntiona onall 50Hz 50Hz which which is to ma ke equipment smaller, lighter and efficient [3].In his research,, 50Hz frequency is converted to 80kHz output without changing line voltage for melting machine. CD 4047IC is used to generate required oscillation for

desired frequency by Ana log RC oscillation method. By changing the values of resistor and capacitor inputs of of CD CD4047IC is is ap applied to obtain 80 kHz frequency. To get alter ating voltage, push transformer (centre tapped transformer) must be controlled by switching de ices. There are three different forms of AC output generated: square wave, modified modified sine wave, wave, and pur pur sine wave. The square wave typ type is the simplest me thod. Besides, it is best suited to low-sensitivity appli cations such as lighting and hea heating ting [9]. [9]. A mod modif ifie ied d sine wave can damage to devices li like: la laser pr printers, l aptop computer, power tool tools, s, digi digita tall clo clock ckss and and med medii al equipment. The The out outpu putt of of vol volta tage ge regu regula latt r, DC regulated voltage is supplied to the inverter. Output of inverter is low voltage hence centre tapped transformer is used to step up the voltage up to 220 V. This voltage is used to dr drive th the load. In In Fi Figure1.s hows the block diagram of the model.

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Figure. Figure.1. 1. Block Block Diagram Diagram o the Purposed Model II. DESIGN SELECTION AND IMPLEMENTATION The design circuit contains s ep-down transformation and rectification for freq ency oscillation, DC regula regulatio tions, ns, RC osc oscill illat ation ionss f r desired frequency, DC

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International Journal of Trend in

cientific Research and Development (IJTSRD) ISSN: 2456-6470

to AC inversion and step-up transfor ation voltage lev level. Ste Step-down own Transfo sformer mer, Rec Rectifi tificc ation, Voltage Regu Regula lato tor, r, RC osci oscill llat ator or and and MOS MOSF F ET switching inverter ar are ma main co components of of th the pr pro posed model. A. Step-down Transformer A tran transf sfor orme merr is a dev devic icee that that tra trans nsfo forr s voltage and current level to another without chan ging is power rati rating ng and and fre frequ quen ency cy.. In In thi thiss prop propo o sed converter system 220/24V step-down transforme transforme is selected to tran transf sfor orm m hig high h volt voltag agee int into o low low vol vol age level for implementation.

calcula calculate te para paramete meterr primar primar inductance (Lp) and secondary inductance, (L s) respectively. AC is converted to DC by using bridge rectifier circuit. Next Next,, cap capac acit itor or can can be calc calcul ulaa ted from eq (3). Finally, it is reduced to 12V (V cc) ith 7812 regulator. This voltage is to supply step-up tr nsformer. .

a

=

N p

C .Voltage Regulator A vol volta tag ge regu regula lato torr is is an inte integr grat ated ed ci rcuit (IC) that provides a constant constant fixed fixed output output voltag voltag regardless of a change in the load or input voltage. The rectified DC power supply is regulated to 12V using voltage regulator LM 7812 and it is used to p rovide step-up transformer. And LM 7805 IC has been used to supply 5V os oscillation ge generator IC IC C OS CD4047. This IC IC has a built-in built-in protec protection tion from from th e high current. In voltage voltage regulator, regulator, the capacitors capacitors hav hav been used in order to minimize the voltage fluct ations in the circ circui uitt and and main mainta tain in the the con const stan antt vol voltt ge across the input as well as output of the circuit. 1)

12V Regulation

Vp

N s

Vs

(1)

Vs

CP

=

L s

×

Vp

L p 10

B. Rectification Rectif Rectifica icatio tion n is a proc process ess of conver converti ti ng alternating current or voltage into direct current or voltage, which converts bidirectional voltage to unidirectional voltage. They are classified as unc ontrolled and controlled rectifiers by switching characteristic. Uncontrolled rectifier makes use of power semiconductor device while controlled ectifier makes use SCR, GTO, MOSFET, thyristor. They are half wave and full wave rectification into two group of uncont uncontro rolle lled d rectif rectifica icatio tion n [6].Fu [6].Full ll brid brid e rectification is used for efficiency purpose.

=

C

4

=

0.48V

×

I

dc

(2)

(3)

dc

Where, CP=coupling factor C =capacitor 2)

5V Regulation

Figure.3 Figure.3 Complete Complete struc structur tur of 12V to 5V Power Suppl LM 781 7812 2 reg regul ulat ator or outp output ut,, 1 V has to be chopped to 5V for for fre frequ quen ency cy gen gener erat ator or I . Finally, it is reduced to 5V 5V with with LM 7805 7805 regula regulato to . D .Inverter An in inverter is is an an ele elecctrica ical ci ci rcuit capable of turning DC power to AC power, hile at the same time regula regulatin ting g the the volta voltage ge,, curr curree t and frequency of the signa signal. l. Inve Inverte rters rs are const constru ruct ct d with various sensitive electronic and electrical components such as MOSFET, IGBT, transistors (FET, JFET), Bi-stable multi vibrators etc. There are different types of MOSFET available but this inverter is designed by using IRFZ44N channel type of MOSFET.IRFZ44N is power MOSFET which h ndles high frequency , voltage and current. current. N-channe N-channe l is more efficiency than p-chan p-channel nel .This .This MOSFET MOSFET has been used turning on and off at 80 80 kHz kHz freque frequenc nc as source to drive the output of two MOSFET is co nected in parallel to the input of transformer.

Figure.2 Structure of 12V Power Supply The turn turn ratio of step-down step-down transforme transforme in this design is equal to 9 from eq (1). Then, it is utilized to

III. METHODOLOGY The CD404 CD4047IC 7IC is capabl capablee o operating in either the mono monoss tabl tablee or as tabl tablee mo e. In as table mode, it


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requires an external capacitor (between pins 1 and 3) and an an external external resistor (between pin s 2 and 3) to determine the output frequency in the s table mode. As table table operati operation on is enable enable by a hig level or low leve levell at at the the as tabl tablee inp input ut.. The The out out put frequency depe depends nds on on the timin timing g compo compone nents nts.C .C 4047IC is a low power CMOS IC that can operate between 3 to 15volts DC.

Figure Figure.4. .4. Pin Pin Conf Config igura uratio tion n of C

=

f =

4.4R1C1 1 T

=

TABL I Frequency adjust ment by R1 Variable Resistor Period Frequency 28k 80.40µs 94.51kHz 26.6k 11.41µs 87.64kHz 25.2k 11.83µs 84.5kHz 23.8k 12.45µs 80.32kHz 22.4k 13.10µs 76.33kHz 21k 13.98µs 71.53kHz 19.6k 14. 2 µ s 67.93kHz

4047IC

The circu circuit it diagram diagram in Figure Figure (4) (4) i s the typical application of the CD 4047IC in the s table mode. The timing elements are capacitor C 1 nd resistor R 1 .By a combination of pins 8, 9 and 12 are connected into into groun round, d, outp output ut puls pulsee wil willl be be ava avail il ble from pins 10 and 11. T

If 28k Ω resistor and 100pF ca pacitor are used, 80 kHz frequency will be achieved. hen R1 and C1 can be made by adjustments and me sure the result with the oscill illosc oscope. Whe When usin using g a v lue of 100pF for C 1 and 28k Ω for R1 the theoretical requency is 81.16 kHz; however however in simula simulation tion resulte resulte with a frequency of 80 kHz kHz app appro roxi xima mate tely ly.. The The desi desired frequency is varied by the value of R 1 and C1 as as s own in Table I.

(4)

IV. DESIGN CALCULATIO C. Design Design Calcul Calculati ation on o Transformer Flux density 1.2 Tesla is assu ed. The e.m.f per turn, Et

=

1 .2

(5)

kVA

0.227 R 1C1

A frequency (f) adjustment control has been provided by R1. There There is no no theoret theoretical ical limitatio limitatio on the values of either R 1 or C1. To ensure frequ ncy stability, however, C1 must must be gr greate eaterr th th n the stray capacitances associated with the circuit design, and R 1 should be much larger than the CMOS 'on' resistance with which it is in series.

Area of core,

A

i

LV winding current, I

Conductor size,

s

a

1

=

4.44f m Te

=

(6)

P out

(7)

V s

=

cu rent curr curren en density

Numbe Numberr of turns turns= = turn turn per per vol vol ts × volts Volume of conductor= Area × length

(9) (10)

Weight Output power

= density × volume = secondary power

(11)

Input power P in

=1.1×Po

(12)

Primary power = Input pow er VP × Ip =Pin p I

Figure Figure.5. .5. Circu Circuit it Diag Diagram ram of Fre Freque quen n y Converter

(8)

p

=

(13)

in

V p


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International Journal of Trend in Total losses

= copper losses + iron losses p

Efficiency


=

P

out

out × p.f

+

(14)

= 32.54 V 2V

×

Vavg

(15)

100%

total losses

For Figure 2, 220 V to 24V AC step-down transformers can be used because the calculated secondary voltage is 20.715 V . Choose, C1 = 2200 µF , I dc Capacitor, C1

TABLE II Frequency Conversion in Trans ormer Parameter Step-down Ste -up Transformer Tr nsformer 115VA,220/24V, 100VA,12/220V, f=50Hz f=80kHz Current Ip=0.6A Ip= .2A

Is =4.79A

Is = .45A

Area of core

Ai=0.00 =0.00145 1451m 1m

Ai=0.00 0.0000 0069 69m m

Conductor Size

ap=0.2 =0.26m 6mm m

ap=3.06 .06mm

as=2.08mm

as= .15mm

Np=570 turns

Np 3turns

Ns=60turns

Ns 50turns

2

Volume of conductor Weight eight Total losses Efficiency

2

-

-

V=4.914×10 m

V= .7×10 m

W= 440 grams grams 16.235W 85%

W 24grams 2.2 99W 97

D. Calculation of Power Control ircuit For bridge rectifier circuit, Input voltage = 220 V, 50 Hz , AC sour e The secondary voltage of transformer, s (rms) = 24 V The desired output current, I DC = 0.5 A The diode cut-in voltage is assumed to be V r = 0.7 V (0.7V for Si and 0.3 for Ge)

V r(pp)

(16)

V0 (max) =Vs(max)–2Vr

(17)

1A

T × I dc

=

(19)

2×V

4.54V

=

V dc

=

V

−

o(max)

r(pp)

(20)

2

= 30.27V In this circuit, capacitor C 1 = 2200µF is used and sele select cted ed to to give give sui suita tabl blee val val ue for regulated power supply. Since the operational DC current for control circuit can be less than the the de sired output current, the standard 2200 µ F capacitor is chosen for C 1. It is also used to be more good the storage capacity. E. Calculation of MOSFET witching Losses In this system, for power M SFET IRFZ44N driver, conside considerati ration on for power power losse losse s has two sources. They are the on-state loss, the of -state loss, the turn-on swit switch chin ing g los losss and and the the tur turnn-off switching loss. The requ requir ired ed val value uess can can be obt obtai ain n d from the datasheet of IRFZ44N.

Inter ternal re resis sistanc tancee of of MOS MOSF F T, RDS = 22mΩ, Drain to source current, I D = 9A, Leakage current, IDSS = 250 µA, Rise time, tr = 75nS, Fall time, t f = 40nS from datasheet [7]. The switchin switching g freque frequency ncy f = 1 6 kHz P

out Output current, I out= Vout

(21)

=0.435A P

in Drain current = ID = Vin η

Vs(max) = 2 Vs(rms) = 33.94 V

=

r(pp)

V

of

( 18)

π

=20.175V

A tran transf sfor orme merr is a dev devic icee that that tra trans nsfo forr s voltage and current lev level from on one AC sy system to to an other. In table II, II, fre frequen quency cy conv conver ersi sion on of of tra trans nsfo forr er has been designed. For frequency 50 Hz step down transformer, output voltage 24 V and igh efficiency 85 % can be used in inverter design as well as battery charger. With the aid of rectifier, the output voltage could could be be set set and and use to supply supply DC loa loa . But, applied load is required 80 kHz to reduce the ffective cross section of the conductor, loss and size. So, frequency 80 kHz is used for step up transformer.

Number turns

o(max)

=

=

85% ,

P in

=

Pout η

(22) (23)

= 117.64W ID = 9.8 T

=

1 f


(24)

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=62.5µsec Assume d = 50% = 0.5 T 62.5 × 10

−

6

=

t on

+

t off + t r

+

enables the evaluation of dif erent power circuits of different ratings at an early d esign stage. Models for IGBT (or) MOSFET switches, electro-mechanical components, different active nd passive components, and and swit switch chin ing g con contr trol olle lers rs c n be used to evaluate power electronics systems acc urately.

t f

= ton + toff + 75nS +40nS

ton = toff =

(T − t r

−

t f )

.2 µsec µ sec

2

The on-state loss can be calculated by following equation, I P on

2

D

×

=

R DS(on)

×

t on

(25)

T

= 1.05W The on-state power loss of MOSFET is 1.05 W. From the datasheet, V DS = 55 V and I DSS = 250 uA. The off-state loss can be calculated by following equation, Poff = = VDS(max) × I DSS ×

t off

(26)

T

= 0.0068 W The off-state power loss of MOSFET is 0.0068 W. V. OPERATION OF THE FREQUENC CONVERTER The The circ circui uitt diag diagra ram m of freq freque uenc ncy y conv conv rter using CD 4047 4047IIC and and MOSF MOSFET ET IRFZ IRFZ44 44N. N. In t is circuit, 5V power supply is connected to the pin 4, 5 and 6.In them, the pin 4 and 5 are complement astable of the IC. Remaining pins are grounded. Next, 100pF capacit capacitor or is connec connected ted between between the p in 1 and 3 a variable resistor 28k Ω is is connected bet een pin 2 and 3 to generate generate the the output output frequency frequency o the IC. The output frequency pin 10 and 11 are co nnected to the MOSFET through resistor R 2 and R3 w ich to prevent to the the loa load d of of the the MOSF MOSFET ET .The .The curr curr nt is made to flow positive half of the primary coil of transformer through Q 1 this is done when the pin 10 becomes high and negative negative half is done by opposit current flow through Q 2 th the primary coil of trans ormer, this is done when pin 11 is high. By swit hing the two MOSFET current is generated AC [5]. VI.

SIMULATION

RESULT

OF

SINGLE

PHASE

CONVERTER

Proteus is a powerful tool used to simul ate and power electronics circuit designs. Proteus has large database of confi configu gura rable ble power power compo compone nent nt mod els along with existing models from various semiconductor manufa manufact cture urers. rs. The power powerfu full Prote Prote s simulation

Figure6. Simulation of Freq uency Converter using Proteus So tware VII. CONCLUSION In this research, the proposed design is described the meth method od of high high freq freque uen n y converter. Design proc proced edur ures es were were calc calcul ulat at d and performance simulation was done by Prote s. The presented circuit is the sample of 80 kHz fr quency converter. The target of this paper is freq ency conversion from 50Hz to 80 kHz; 220V.AC system is not directly conver converted ted low frequenc frequency y t high frequency. So, MOSFE MOSFET T swit switchi ching ng device devicess are directly driven by the switching pulses of CD40 7IC to convert high frequency frequency 80 kHz. The outpu waveform of frequency converter will generate is app roximately square wave. This method produces a uch more similar AC wave wavefor form m than than tha thatt of othe otherr . Most of the electrical appl applia ianc nces es are are des desig igne ned d for for t he 80 kHz square wave like like meltin melting g machin machine, e, rad rad r in electrical power system. Finally, the basic d mands defined by the operator have also been addre ssed, such as equipment smalle smaller, r, ligh lighter ter,, high high effic efficien ientt y and long lifetime. ACKNOWLEDGMENT Firstly, the author would like to acknowledge particular thanks to Dr. yunt Soe, Rector for permitting to attend the M aster program at Pyay Techno hnolog logica ical Univ Univer ersi sity ty.. M ch gratitude is owed to Princ incipa ipal of of Py Pyay Technol hnolog ogical University, for his kind kind perm permis issi sion on to carr carry y out out t his research. The author is deeply thankful to her su ervisor, Dr. Soe Winn, Profe Professo ssor, r, Hea Head d of of Elec Electri tricc al Power Engineering, Pyay Pyay Tech Technol nologi ogica call Univer Universit sit y, for his helpful and for


Page: 664



providing guidelines, valuable advice, and ideas for deve develo lop p the the rese resear arch ch.. And And,, the the aut aut or is deeply grateful grateful to her teacher teacher Daw Win Moet Moet Htwe, Assistant Le Lecturer, De Department of of El El ctrical Power Enginee neering ing, Pyay Pyay Tec Technic hnicaal Univ Univee sity, for her valuable instructions. Finally, I would like to thank my parents, friends and colleague for supporting to me.

Conference on Energy Systems and Technologies 18-21 Feb. 2013, Cairo, E ypt. nd 4. Marty Brown, Brown, 2011, 2011, Powe Power supply Cookbook, 2 Edition printed by Butter worth-Heinemann Book Company, Inc.

REFERENCES 1. Akshata Akshata A. Supekar, Supekar, P.M. Kurulka Kurulkar, K.P. rathod, “Design and Simulation of Powe Conditioning th System (PCS) for Defence Appli cations,” 12 IEEE INDICON 17-20 17-20 Dec.2015 Dec.2015, New Delhi, India.

6. Power

2. Bettina Bettina

Rubino; Rubino; LuigiAbb LuigiAbbatel atelll i; Giuseppe Catalisano; Simone Buonomo; “1200V SiC MOSFET and N- off SiC JFET per ormances and driving in high power-high fre uency power converter; Nurnberg, PCIM 2013

3. Reyad Abdel-Fadil, Ahmad Eid,

azen AddelSala Salam; m; “El “Elec ectr tric icaal Dist Distri ribu buti tion on Po er Systems of nd Modern Civil Aircrafts,” 2 International

5. IC CD 4047IC 4047IC Datas Datashee heet acquired from Harris

Semic Semicond onduc uctor tor SCHS04 SCHS044 4 2003.

– Revised September

Electronics han book by Dr. P. S. Bimbhra.

7. IRFZ44N

MOSFET atasheet acquired from SiHF Z44N Vishay silico ix.

8. A Mamun A, M Elahi, M Quamruzzaman, M

Tomal, 9. Design

an and Im Implementation of Single Phase

Inverter https://en.wikipedia.org/w iki/Power_inverter 10. S. J. Rober Robert, t, Synchr Synchronou onous Rectification in High-

Performance Power Co verter Design, Texas Instruments, Instruments, www.ti.com.


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Design and Simulation of 80 kHz High Frequency Converter Using CD 4047IC CMOS

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