DISCRETE SEMICONDUCTORS
ook, halfpage
M3D186
2N3904
NPN switching transistor Product specification Supersedes Supersedes data data of September September 1994 File under Discrete Semiconductors, SC04
1997 Jul 15
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
FEATURES
PINNING
• Low curr current ent (max (max.. 200 mA)
PIN
• Low volt voltage age (max (max.. 40 V).
DESCRIPTION
1 2 3
APPLICATIONS
collector base emitter
• High-speed switching. DESCRIPTION
1 handbook, halfpage
NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906.
1
2 3
2 3
MAM279
Fig.1 Fig.1 Simpli Simplifie fiedd outl outline ine (TO-92 (TO-92;; SOT5 SOT54) 4) and symbol. QUICK REFERENCE DATA SYMBOL
VCBO VCEO IC Ptot hFE fT toff
1997 Jul 15
PARAMETER
collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time
CONDITIONS
open emitter open base
MIN.
V V mA mW
100 300
−
−
240
MHz ns
− −
2
UNIT
60 40 200 500 300
−
Tamb ≤ 25 ° C IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 20 20 V; V; f = 10 100 M MH Hz ICon = 10 mA; IBon = 1 mA; IBoff = − 1 mA
MAX.
−
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
LIMITING VALUES
In accordance with the Absolute Maximum Maximum Rating System (IEC 134). SYMBOL
VCBO VCEO VEBO IC ICM IBM Ptot Tstg T j Tamb
PARAMETER
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS
open emitter open base open collector
MIN.
60 40 6 200 300 100 500 +150 150 +150
− − − − − −
Tamb ≤ 25 ° C; note note 1
MAX.
− − 65 − − 65
UNIT
V V V mA mA mA mW °C °C °C
Note
1. Transistor Transistor mounted mounted on an FR4 FR4 printedprinted-circu circuitit board. board. THERMAL CHARACTERISTICS SYMBOL
Rth j-a j-a
PARAMETER
CONDITIONS
VALUE
UNIT
25 0
K /W
thermal resistance from junction to ambient note 1
Note
1. Transistor Transistor mounted mounted on an FR4 FR4 printedprinted-circu circuitit board. board. CHARACTERISTICS Tamb = 25 ° C. SYMBOL
ICBO IEBO hFE
VCEsat VBEsat Cc Ce fT 1997 Jul 15
PARAMETER
CONDITIONS
collector cut-off current emitter cut-off current DC current gain
IE = 0; VCB = 3 0 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA collec collector tor-em -emitt itter er satur saturati ation on volta voltage ge IC = 10 mA; IB = 1 mA; no note 1 IC = 50 mA; IB = 5 mA; no note 1 base-emitter saturation voltage IC = 10 mA; IB = 1 mA; no note 1 IC = 50 mA; IB = 5 mA; no note 1 collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz transition frequency IC = 10 mA; VCE = 20 2 0 V; V; f = 100 MH M Hz 3
MIN. − −
MAX.
50 50
60 80 100 60 30
−
−
−
200 200 850 950 4 8
30 0
−
− − − −
UNIT
nA nA
−
300 − −
mV mV mV mV pF pF MHz
Philips Semiconductors
Product specification
NPN switching transistor SYMBOL
F
2N3904
PARAMETER
CONDITIONS
noise figure
MIN.
IC = 100 µ A; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz
−
MAX.
UNIT
5
dB
65 35 35 240 200 50
ns ns ns ns ns ns
Switching times (between 10% and 90% levels); see Fig.2
ton td tr toff ts tf
turn-on time delay time rise time turn-off time storage time fall time
ICon = 10 mA; IBon = 1 mA; IBoff = − 1 mA − − − − − −
Note
1. Pulse ulse test test:: tp ≤ 300 µ s; δ ≤ 0.02.
VBB
ndbook, full pagewidth
VCC
RB oscilloscope
(probe)
RC
450 Ω R2
Vi
Vo
(probe) 450 Ω
DUT
R1 MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3 . 9 kΩ; RC = 270 Ω . VBB = − 1.9 V; VCC = 3 V. Oscilloscope input impedance Z i = 50 Ω .
Fig.2 Test circuit for switching times.
1997 Jul 15
4
oscilloscope
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E d
A
L b
1 e1
2
D
e
3 b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions) UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2 5.0
0.48 0.40
0.66 0.56
0.45 0.40
4.8 4.4
1.7 1.4
4.2 3.6
2.54
1.27
14.5 12.7
2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SO SOT54
1997 Jul 15
REFERENCES IE IEC
JEDEC
EIAJ
TO-92
SC-43
5
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Philips Semiconductors
Product specification
NPN switching transistor
2N3904
DEFINITIONS Data sheet status
Object Objective ive specifi specificat cation ion Preliminar Preliminaryy specific specification ation Prod Produc uctt spe speci cific ficat atio ionn
This This data data sheet sheet contai contains ns target target or goal goal spec specific ificati ations ons for produc productt deve develop lopmen ment. t. This data sheet contains contains preliminar preliminaryy data; data; supplement supplementary ary data may be published published later. later. This This data data shee sheett con conta tain inss fina finall pro produ duct ct spec specifi ifica catition ons. s.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information
Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jul 15
6
Philips Semiconductors
Product specification
NPN switching transistor
2N3904 NOTES
1997 Jul 15
7
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SCA55
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117047/00/02/pp8
Date of release: 1997 Ju Jul 15 15
Document order number:
9397 75 750 02 02642
