UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Integrantes: Cristhian Llasha Mercedes Sánchez Roger Toaza Práctica de Electrónica de Potencia PRACTICA No 1 DISPOSITIVOS DISPOSITIV OS SEMICONDUCTORES
OBJETIVO GENERAL Describir el funcionamiento de un diodo semiconductor e interpretar su curva característica. OBJETIVOS PARTICULARES Identificar las terminales de distintos tipos de diodos mediante el multímetro.
Determinar el estado del diodo (conducción) (conducció n) aplicando la polarización polarizac ión directa e inversa. Construir la curva característica (real) de los los diodos semiconductores.
INTRODUCCIÓN Unas cuantas décadas que han seguido a la introducción del transistor, hacia finales de los años cuarenta, han sido testigos de un cambio asombroso en la industria de la electrónica. La miniaturización que se ha lograda nos ha dejado sorprendidos de sus alcances. Sistemas Sis temas completos aparecen apare cen ahora sobre una oblea de silicio, miles de veces más pequeña que un solo elemento de las redes iniciales. El tipo más simple de dispositivo constituido como un semiconductor es el diodo que desempeña un papel importante en los sistemas electrónicos; Con sus características que son muy similares a la de un interruptor, aparece en una amplia variedad de aplicaciones que van desde las más sencillas a las más complejas. El diodo semiconductor se forma uniendo un material material tipo P con uno tipo N, construidos de la misma base: germanio (Ge) o silicio (Si), mediante técnicas especiales. En el momento en que son unidos los dos materiales, los electrones y los huecos en la región de la unión se combinan, dando por resultado una falta de portadores en la región cercana a la unión. A esta región de iones positivos y negativos descubiertos se le llama región de agotamiento o de empobrecimiento, o barrera de unión, debido a la disminución de portadores en ella.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
En la figura 1, se muestra el símbolo y el aspecto físico de un diodo rectificador, la flecha que simboliza el ánodo representa la dirección del "flujo convencional de corriente y el cátodo se identifica con una banda en los diodos pequeños. La aplicación de un voltaje a través de sus terminales permite tres posibles polarizaciones: polarizaciones : Sin polarización (VD=0); Polarización directa (VD>0) y Polarización inversa (VD<0 .) Un diodo semiconductor tiene polarización inversa cuando se asocia el material tipo P a un potencial negativo y el material tipo N a un potencial positivo. La polarización directa se da cuando se aplica un voltaje positivo al material tipo P y un potencial negativo al material tipo N. A la corriente que existe bajo las condiciones de polarización polarización inversa se le llama corriente corrient e de saturación inversa (IS). Mediante el empleo de la física del estado sólido se ha llegado a encontrar que la corriente a través del diodo semiconductor es una función del voltaje aplicado entre sus terminales, de la siguiente manera:
ID: es la corriente en el diodo, medida en amperes. IS: es el valor de la corriente de saturación inversa, es del orden de los nanoamperes o de microamperes. K: es una constante constante que depende también del material del dispositivo, 11600/η con η=1 para Ge y η=2 para Si. T: es la temperatura temperatura ambiente ambiente expresada expresada en °K, °K, (°K = °C + 273).
MATERIAL •
4 Diodo de Silicio IN4001 o IN4004.
• 4 Diodos Zener a 9 volts.
•
2 Diodos de Germanio 0A90.
• 4 LED de diferente color.
•
1 Resistor de 220 Ω a 1/2 W.
• 1 Resistor de 1 KΩ a 1/2 1/2 W.
•
1 Resistor variable de 10KΩ.
•
Multímetros; Multímet ros; Analógico y Digital.
• Tablilla de experimentación experimentación (protoboard). (protoboard). • Fuente de voltaje variable de 0 a 30 V.
Generador de señales.
• Osciloscopio.
Tres puntas para osciloscopio. osciloscopio .
• Juego de alambres para conexión.
•
•
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
DESARROLLO EXPERIMENTAL EXPERIMENTO 1. IDENTIFICACIÓN DE TERMINALES Y PRUEBA DE DIODOS. a) Por observación, observación , identifique identifiqu e el Ánodo y Cátodo de los distintos distinto s diodos que está utilizando, dibuje y anote sus observaciones. observaciones .
Tensión en directa 0.5, A PARTIR DE 0,5 v este diodo trabaja Tensión en inversa 0, el diodo esta quemada Resistencia Directa es mínima Resistencia inverso 0
Empleando un “MULTIMETRO ANALÓGICO”, como primera prueba, en la función de “OHMS” compruebe el inciso anterior, conectando cone ctando el ohmetro en los extremos del diodo en polarización directa y polarización inversa, como se indica en la figura 1, reportando en cada caso la resistencia medida:
b)
Polarización Directa
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Polarización inversa
EXPERIMENTO 2. CURVA CARACTERISTICA DE UN DIODO SEMICONDUCTOR . a)
Arme el circuito que se muestra en la figura 2, utilizando un diodo de Silicio, Verificando que los instrumentos se conecten en la polaridad indicada.
b)
Partiendo de cero volts, aumente gradualmente gradualment e la tensión de la fuente V1 en incrementos incremento s de 0.1 volts hasta que el diodo alcance su voltaje de conducción, anote los valores de VD e ID, en en la tabla 1.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Tabla 1.
0.1 0.2 0.3 0.4 0.5 0.6 0.7
c)
VD (mV) 100 200 300 400 500 600 700
ID (uA) 0.306 2.47 17.5 121.2 837.84 5770 38880
Invierta la polaridad del diodo y repita el inciso anterior.
Tabla 2 0.1
VD (mV) -100
ID (nA) -45.57
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
0.6 -600 -53.76 0.7 -700 -53.8 d) Realice el procedimiento del inciso b, con una de carga RL de 1 KΩ, como se muestra en la figura 3, mida el voltaje del diodo VD, la corriente ID, registre sus datos en la tabla 2.
Tabla 3 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VD (mV) 99.68 197.62 286.52 352.05 393.96 420.33 439.54
ID (uA) 319.18 nA 2.36 13.43 48.01 106.63 179.63 260.34
Repita el inciso b y c, empleando el Diodo Emisor de Luz (LED), como se muestra en la figura 3 y anote las mediciones en la tabla 4
e)
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
DIRECTA
Tabla 3 0,1 0,2
MV 100 200
MA 13,87 0
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
INVERSA
0,1 0,2 0,3 0,4 0,5 0,6 0,7
MV -100 -200 -300 -400 -499,99 -599,99 -699,99
PA -100,1 -200,2 -300,3 -400,4 -500,4 -6000,509 -700,69
Construya las gráficas de la curva característica caracter ística de los diodos en polarización directa con los valores obtenidos de las tablas anteriores.
f)
DIRECTA LITERAL B 300 250 200 150 100 50 0 0
10 0
200
300
400
500
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
DIRECTA LITERAL D 300 250 200 150 100 50 0 0
10 0
200
300
400
500
DIRECTA LITERAL E 16 14 12 10 8 6 4 2 0 0
100
200
300
400
500
600
700
8 00
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
EXPERIMENT O 3. CARACTERIZACI EXPERIMENTO CARACTERIZACIÓN ÓN DE UN DIODO ZENER EN POLARIZACI POLARIZACIÓN ÓN INVERSA. a)
Seleccione el diodo Zener de 10 volts y construya el circuito que se muestra en la figura 5.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Tabla 1 Fuente 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 c)
Vab 21.996 999.990 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 9.750 9.752 9.754 9.756 9.758 9.760
nV mV V V V V V V V V V V V V V V
Partiendo de 0 volts, volts, realice incrementos incrementos de voltaje en la fuente V1 hasta hasta alcanzar los 15 volts, y obtenga los valores ID indicados en la parte media de la tabla 4 y anote los valores de voltaje VAB correspondiente a cada valor de la
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Tabla 3 Fuente 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
R 0.001000000000000000000 0.000098115188383045500 0.000000000097904836499 0.000000000097904836499 0.000000000097904836499 0.000000000097904836499 0.000000000097904836499 0.000000000097904836499 0.000000000097904836499 0.000000000097998649796 0.000000038978483876900 0.007814102564102560000 0.004342831700801420000 0.003007398273736130000 0.002300330033003300000 0.001862595419847330000
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
cada valor de voltaje VAB indicado y obtenga el valor de la resistencia del diodo RZ.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
EXPERIMENTO 5. CARACTERISTICAS CARACTERISTICA S DEL DIODO DE GERMANIO EN FRECUENCIAS ALTAS. a)
Utilice el diodo de Germanio y construya el circuito que se muestra en la figura 6.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
Frecuencia 10 Hz
500 Hz
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1 MHz
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c)
Con el osciloscopio, observe y registre el voltaje pico de la señal de salida obtenida en la resistencia, realice 10 lecturas a diferentes frecuencias.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
CUESTIONARIO 1.
¿Qué son los los materiales materiales semiconductores semiconductores intrínsecos intrínsecos y extrínsecos? extrínsecos? Los semiconductores semiconduct ores extrínsecos, extrínseco s, son aquellos en que se ha introducido un elemento contaminante, llamado impureza, generalmente del grupo III o V de la tabla periódica, que cambia drásticamente las propiedades de conducción del material intrínseco, reduciendo enormemente la resistividad del mismo. Los Semiconductores Semiconduct ores Intrínsecos Intrínseco s son aquellos materiales que presentan una conductividad nula a bajas temperaturas, pero que pueden ser débilmente conductores a temperatura ambiente, debido a que la anchura de la Banda Prohibida no es elevada, lo que hace que la resistividad del material, con ser alta no sea infinita. Algunos de los semiconductores intrínsecos, o en estado de máxima pureza más conocidos son el Silicio (Si), el Germanio (Ge), o el Arseniuro de Galio (AsGa). La tabla muestra
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
5.
Explique qué pasa si se aumenta el voltaje de polarización inversa a un diodo semiconductor y se tiene una sobrecarga. El diodo diodo al ser polarizado polarizado en inversa tiene un valor de tensión establecido por el fabricante, este tiene una zona de ruptura; si se incrementa la tensión esta puede destruir o quemar el diodo dejándolo inservible. Investigue Investig ue cuatro tipos de diodos y describa el funcionamiento funcionamie nto brevemente. DIODO RECTIFICADOR: RECTIFICADOR: Los diodos rectificadores rectificadores son aquellos dispositivos semiconductores que solo conducen en polarización directa (arriba de 0.7 V) y en polarización inversa no conducen. DIODO ZÉNER: ZÉNER: Un diodo Zener es es un semiconductor semiconductor que se distingue distingue por su capacidad de mantener un voltaje constante en sus terminales cuando se encuentran polarizados inversamente, y por ello se emplean como elementos de control, se les encuentra con capacidad de ½ watt hasta 50 watt y para tensiones de 2.4 voltios hasta 200 voltios. DIODO EMISOR DE LUZ (LED’s): Es un diodo di odo que entrega luz al
6.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
10. ¿Qué es
resistencia estática y resistencia dinámica? Resistencia Resistenc ia estática: Si el diodo está trabajando en DC, en un punto de trabajo determinado y constante (V,I) de la característica, el diodo presentará una resistencia también constante llamada resistencia estática. Resistencia Resistenc ia dinámica: Si el diodo trabajo con voltajes variables, es decir que el punto de trabajo (V.I) se va a mover con el tiempo por la curva característica, la resistencia que va a presentar el diodo también va a variar, dependiendo esta del punto de trabajo en cada instante.
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UNIVERSIDAD TÉCNICA DE MBATO FACULTAD DE INGENIERÍA EN SISTEMAS, ELECTRÓNICA E INDUSTRIAL CARRERA DE INGENIERÍ A INDUSTRIAL SEPTIEMBRE 2017 – MARZO 2017 AMBATO AMBATO-ECUADOR
la unión pn detendrá la conducción de la corriente eléctrica, y el diodo dejará de funcionar como una vía eléctrica. Debido a que el silicio es relativamente relativament e fácil y barato de obtener y procesar, los diodos de silicio son más frecuentes que los diodos de germanio. Diodos de germanio Los diodos de germanio se fabrican de una manera similar a los diodos de