SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor
V DS @ T jmax
650
V
R DS(on)
0.38
Ω
I D
11
A
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated
P-TO220-3-31
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
• Extreme dv dv /dt /dt rated rated • High peak current capability • Improved transconductance
1
2
3
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP11N60C3
P-TO220-3-1
Q67040-S4395
11N60C3
SPB11N60C3
P-TO263-3-2
Q67040-S4396
11N60C3
SPI11N60C3
P-TO262-3-1
Q67042-S4403
11N60C3
SPA11N60C3
P-TO220-3-31 Q67040-S4408
11N60C3
Maximum Ratings Parameter
Symbol
Value SPP_B SPP_B_I
Continuous drain current
Unit SPA A
I D
T C
= 25 °C
11
11 1)
T C
= 100 °C
7
71)
33
33
Pulsed drain current, t p limited by T jmax
I D puls
A
Avalanche energy, single pulse
E AS
340
340
E AR
0.6
0.6
Avalanche current, repetitive t AR limited by T jmax
I AR
11
11
A
Gate source voltage static
V GS
±20
±20
V
Gate source voltage AC (f >1Hz)
V GS
±30
±30
Power dissipation, T C = 25°C
P tot
125
33
Operating and storage temperature
T , T stg
mJ
I D=5.5A, V DD=50V
Avalanche energy, repetitive t AR limited by T jmax2) I D=11A, V DD=50V
-55...+150
W °C
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter
Symbol
Drain Source voltage slope
dv /dt
Value
Unit
50
V/ns
Values
Unit
V DS = 480 V, I D = 11 A, T j = 125 °C
Thermal Characteristics Parameter
Symbol min.
typ.
max.
Thermal resistance, junction - case
R thJC
-
-
1
Thermal resistance, junction - case, FullPAK
R thJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
R thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R thJA_FP
-
-
80
SMD version, device on PCB:
R thJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 3)
-
35
-
-
-
260
Soldering temperature,
T sold
K/W
°C
1.6 mm (0.063 in.) from case for 10s 4) Electrical Characteristics, at T =25°C unless otherwise specified Parameter
Symbol
Conditions
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D=0.25mA
Drain-Source avalanche
V (BR)DS V GS=0V, I D=11A
Values
Unit
min.
typ.
max.
600
-
-
-
700
-
2.1
3
3.9
V
breakdown voltage Gate threshold voltage
V GS(th)
I D=500µA, V GS =VDS
Zero gate voltage drain current
I DSS
V DS=600V, V GS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance R DS(on)
Gate input resistance
R G
µA
T j=25°C
-
0.1
1
T j=150°C
-
-
100
V GS=30V, V DS=0V
-
-
100
V GS=10V, I D=7A
nA Ω
T j=25°C
-
0.34
0.38
T j=150°C
-
0.92
-
f =1MHz, open drain
-
0.86
-
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter
Transconductance
Symbol
g fs
Conditions
V DS≥2*I D*R DS(on)max,
Values
Unit
min.
typ.
max.
-
8.3
-
S pF
I D=7A
Input capacitance
C iss
V GS=0V, V DS=25V,
-
1200
-
Output capacitance
C oss
f =1MHz
-
390
-
Reverse transfer capacitance
C rss
-
30
-
-
45
-
-
85
-
Effective output capacitance,5) C o(er)
V GS=0V,
energy related
V DS=0V to 480V
Effective output capacitance,6) C o(tr) time related
Turn-on delay time
t d(on)
V DD=380V, V GS=0/10V,
-
10
-
Rise time
t r
I D=11A,
-
5
-
Turn-off delay time
t d(off)
R G=6.8Ω
-
44
70
Fall time
t f
-
5
9
-
5.5
-
-
22
-
-
45
60
-
5.5
-
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
V DD=480V, I D=11A
V DD=480V, I D=11A,
nC
V GS=0 to 10V
Gate plateau voltage
V (plateau) V DD=480V, I D=11A
V
1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f . AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter
Symbol
Inverse diode continuous
I S
Conditions
Values
Unit
min.
typ.
max.
-
-
11
-
-
33
T C=25°C
A
forward current
Inverse diode direct current,
I SM
pulsed Inverse diode forward voltage
V SD
V GS =0V, I F=I S
-
1
1.2
V
Reverse recovery time
t rr
V R =480V, I F =I S ,
-
400
600
ns
Reverse recovery charge
Q rr
di F /dt =100A/µs
-
6
-
µC
Peak reverse recovery current
I rrm
-
41
-
A
Peak rate of fall of reverse
di rr /dt
-
1200
-
A/µs
T j=25°C
recovery current Typical Transient Thermal Characteristics Symbol
Value
Unit
SPP_B_I
SPA
R th1
0.015
0.15
R th2
0.03
R th3
Symbol
Value
Unit
SPP_B_I
SPA
C th1
0.0001878
0.0001878
0.03
C th2
0.0007106
0.0007106
0.056
0.056
C th3
0.000988
0.000988
R th4
0.197
0.194
C th4
0.002791
0.002791
R th5
0.216
0.413
C th5
0.007285
0.007401
R th6
0.083
2.522
C th6
0.063
0.412
T j
K/W
R th 1
R th,n
T case
P to t (t) C th 1
C th 2
C th,n T am b
External Heatsink
Ws/K
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 1 Power dissipation
2 Power dissipation FullPAK
P tot = f (T C)
P tot = f (T C)
140
SPP11N60C3
35
W
W 120 110 25
100 t o t
P
t o t
90
P
20
80 70
15
60 50
10
40 30
5
20 10 0 0
20
40
60
80
100
120
°C
0 0
160
20
40
60
80
100
120
T C
3 Safe operating area
4 Safe operating area FullPAK
I D = f ( V DS )
I D = f (V DS)
parameter : D = 0 , T C=25°C
parameter: D = 0, T C = 25°C
10 2
10 2
A
A
10 1
10 1
D I
°C 160 T C
D I
10 0
10 0
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
10 -1
10 -2
0
1
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
10 -1
2
3
10 -2
0
1
2
3
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 5 Transient thermal impedance
6 Transient thermal impedance FullPAK
Z thJC = f (t p)
Z thJC = f (t p)
parameter: D = t p/T
parameter: D = t p/t
10 1
10 1
K/W
K/W
10 0
C J h t
Z 10
10 0
C J h t
-1
Z 10
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
10 -2
10 -3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
s t p
-1
D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse
10 -2
10 -3
10
10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10
-1
t p
7 Typ. output characteristic
8 Typ. output characteristic
I D = f (V DS); T j =25°C
I D = f (V DS); T j =150°C
parameter: t p = 10 µs, V GS
parameter: t p = 10 µs, V GS
40
22
20V 10V 8V
A 32
A 18
7V
24
20V 8V 7V 7.5V 6V
16
28 D I
s 10
6,5V
D I
14 12
5.5V
20 6V
10
16 8 12
5,5V
5V
6 4.5V
8 4 0
5V
4
4,5V
2
4V
0
1
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 9 Typ. drain-source on resistance
10 Drain-source on-state resistance
R DS(on)=f (I D)
R DS(on) = f (T j)
parameter: T j=150°C, V GS
parameter : I D = 7 A, V GS = 10 V 2.1
2
SPP11N60C3
Ω
Ω 1.8 4.5V
4V ) n o ( S D
R
5V
6V
5.5V
1.6
) n o ( S D
1.4
1.6 1.4
R
1.2 1.2
1 0.8
1
0.6 0.8
98%
0.6
0.4 0
0.4
6.5V 8V 20V 2
4
6
8
10
12
typ
0.2
14
16
A I D
0 -60
20
-20
20
60
°C
180
T j
11 Typ. transfer characteristics
12 Typ. gate charge
I D = f ( V GS ); V DS≥ 2 x I D x R DS(on)max
V GS = f (QGate)
parameter: t p = 10 µs
parameter: I D = 11 A pulsed
40
A
100
16
SPP11N60C3
V
25°C
32 12 28 D I
24 20 16
S G
150°C
V
10
8
6
12 4 8 4 0
2
0
0,2 V DS max
0,8 V DS max
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 13 Forward characteristics of body diode
14 Typ. switching time
I F = f (VSD)
t = f (I D), inductive load, T j =125°C
parameter: T j , tp = 10 µs
par.: V DS =380V, V GS=0/+13V, R G=6.8Ω
2 SPP11N60C3
10
70
ns A
60 td(off)
55 50
10 1 F I
t
45 40 35 30 25
10 0 T j = 25 °C typ
20
T j = 150 °C typ
15
T j = 25 °C (98%)
0.4
0.8
1.2
1.6
2
td(on)
10
T j = 150 °C (98%) 10 -1 0
tf
2.4
V
3
5
tr
0 0
2
4
6
8
12
A I D
V SD
15 Typ. switching time
16 Typ. drain current slope
t = f (R G ), inductive load, T j=125°C
di /dt = f(R G ), inductive load, T j = 125°C
par.: V DS =380V, V GS=0/+13V, I D=11 A
par.: V DS =380V, V GS=0/+13V, I D=11A
350
3000
ns
A/µs
250 t
t 2000 d / i d
200
150
td(off) td(on) tr tf
1500
1000 100
50
0
di/dt(off)
500
0
di/dt(on)
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 17 Typ. drain source voltage slope
18 Typ. switching losses
dv /dt = f(R G), inductive load, T j = 125°C
E = f (I D), inductive load, T j=125°C
par.: V DS =380V, V GS=0/+13V, I D=11A
par.: V DS =380V, V GS=0/+13V, R G=6.8Ω
140
0.04
V/ns 120
mWs
dv/dt(off)
110 t d / v d
*) Eon includes SPD06S60 diode commutation losses
0.03
100 0.025
90
E
80 0.02 70 60
0.015
50 40
Eon*
0.01
dv/dt(on)
30
0.005 Eoff
20 10 0
10
20
30
40
50
0 0
70
Ω
2
4
6
8
I D
R G
19 Typ. switching losses
20 Avalanche SOA
E = f (R G), inductive load, T j=125°C
I AR = f (t AR)
par.: V DS =380V, V GS=0/+13V, I D=11A
par.: T j ≤ 150 °C
0.24
12
A
11
*) Eon includes SPD06S60 diode commutation losses
A
mWs 9 8 0.16
Eoff
R
A I
E
7 6
0.12 5 4
0.08 Eon*
0.04
T j(START)=25°C
3
T j(START)=125°C
2 1
0
0
-3
-2
-1
0
1
2
4
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 21 Avalanche energy
22 Drain-source breakdown voltage
E AS = f (T j)
V (BR)DSS = f (T j)
par.: I D = 5.5 A, V DD = 50 V SPP11N60C3
350
720
V
mJ
S 680 S D ) R 660 B (
250 S A
V
E
200
640 620
150
600 100 580 50
560
0 20
40
60
80
100
120
°C
540 -60
160
-20
20
60
100
T j
T j
23 Avalanche power losses
24 Typ. capacitances
P AR = f (f )
C = f (V DS)
parameter: E AR =0.6mJ
parameter: V GS =0V, f =1 MHz 10 4
300
pF W
C iss 10 3
R A
200
P
C
10 2
150
C oss
100 10 1 50
0
4
5
180
°C
6
10 0
C rss
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 25 Typ. C oss stored energy E oss=f (V DS)
7.5
µJ
6 5.5 s s o
E
5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
100
200
300
400
V
600
V DS
Definition of diodes switching characteristics
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO-220-3-1 B
10 ±0.4 3.7 ±0.2
6 . 0 ±
8 3 . 5 1
C
A 1.27±0.13 2 . 0 ±
8 . 2
0.05
8 4 . 0 ±
8 9 . 9
9 . 0 ±
3 2 . 5
5 . 0 ±
5 . 3 1
0.5 ±0.1
3x 0.75 ±0.1
2.51±0.2
1.17 ±0.22 2x 2.54
4.44
0.25
M
A B C
All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D2-PAK)
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO-262-3-1 (I2-PAK) 10 ±0.2
A
0...0.3 8.5
B
1)
4.4
1.27
3 . 0 ±
1
3 . 0 ±
0.05
) 1
5 5 . 6 7 . 1 1
C
2 . 0 ±
2.4
2 . 0 ±
5 5 . 4
5 2 . 9
5 . 0 ±
5 . 3 1
0.5 ±0.1
0...0.15 2.4
1.05 3 x 0.75 ±0.1 2 x 2.54 1)
0.25
M
A B C
Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK) dimensions
P-TO220-3-31
[mm]
symbol
[inch]
min
max
min
max
A
10.37
10.63
0.4084
0.4184
B
15.86
16.12
0.6245
0.6345
C
0.65
0.78
0.0256
0.0306
D
2.95 typ.
0.1160 typ.
E
3.15
3.25
0.124
0.128
F
6.05
6.56
0.2384
0.2584
G
13.47
13.73
0.5304
0.5404
H
3.18
3.43
0.125
0.135
K
0.45
0.63
0.0177
0.0247
L
1.23
1.36
0.0484
0.0534
M
2.54 typ.
0.100 typ.
N
4.57
4.83
0.1800
0.1900
P
2.57
2.83
0.1013
0.1113
T
2.51
2.62
0.0990
0.1030
SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Published by Infineon Technologies AG Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. ,
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.
