datasheetSVF7N65T

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary TM

F-Cell structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially especially tailored tailored to minimize minimize on-state on-state resistan resistance, ce, provide provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

FEATURES ∗

7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V

∗

Low gate charge

∗

Low Crss

∗

Fast switching

∗

Improved dv/dt capability

NOMENCLATURE

SilanVDMOSCode ofF-Cellprocess Nominalcurrent,using1or2digits: Example:4denotes4A, 10denotes10A, 08denotes0.8A NdenotesNChannel

Packageinformation. Example:T:TO-220;F:TO-220F. NominalVoltage,using2digits Example:60denotes600V, 65denotes650V. SpecialFeaturesindication,M SpecialFeaturesindication,Maybeomitted. aybeomitted. Example:Edenotesembeded Example:EdenotesembededESDstructure ESDstructure

ORDERING INFORMATION Part No.

Package

Marking

Material

Packing

SVF7N65T

TO-220-3L

SVF7N65T

Pb free

Tube

SVF7N65F

TO-220F-3L

SVF7N65F

Pb free

Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn

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SVF7N65T/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics

Ratings

Symbol

Unit

SVF7N65F

SVF7N65T

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

TC = 25°C

Drain Current

7.0

ID

TC = 100°C

Drain Current Pulsed

IDM

Power Dissipation(TC=25°C)

28

PD

-Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range

A

4.0

A

145

46

W

1.16

0.37

W/°C

E AS

435

mJ

TJ

-55

+150

°C

Tstg

-55

+150

°C

～

～

THERMAL CHARACTERISTICS Characteristics

Ratings

Symbol SVF7N65T

SVF7N65F

Unit

Thermal Resistance, Junction-to-Case

RθJC

0.86

2.7

°C/W

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

120

°C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics

Symbol

Drain -Source Breakdown Voltage

BVDSS

Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance

Min.

Typ.

Max.

Unit

VGS=0V, ID=250µA

650

--

--

V

IDSS

VDS=650V, VGS=0V

--

--

10

µA

IGSS

VGS=±30V, VDS=0V

--

--

±100

nA

VGS(th)

VGS= VDS, ID=250µA

2.0

--

4.0

V

RDS(on)

VGS=10V, ID=3.5A

--

1.1

1.4

Ω

--

917.7

--

--

98.6

--

--

1.90

--

--

29.00

--

--

48.00

--

--

39.00

--

--

33.00

--

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

Turn-on Rise Time

tr

Turn-off Delay Time

td(off)

Test conditions

VDS=25V,VGS=0V, f=1.0MHZ

VDD=10V, RG=25Ω, ID=7.0A (Note 2,3)

Turn-off Fall Time

tf

Total Gate Charge

Qg

VDS=520V, ID=7.0A,

--

15.50

--

Gate-Source Charge

Qgs

VGS=10V

--

5.40

--

Gate-Drain Charge

Qgd

--

4.50

--


(Note 2,3)

REV:1.1

pF

ns

nC

2011.02.15 Page 2 of 8

SVF7N65T/F_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics

Continuous Source Current

Symbol

IS

Test conditions

Integral

Reverse

Junction

Diode

in

P-N the

Min.

Typ.

Max.

--

--

7.0

--

--

28.0

Unit

A

Pulsed Source Current

ISM

Diode Forward Voltage

VSD

IS=7.0A,VGS=0V

--

--

1.4

V

Reverse Recovery Time

Trr

IS=7.0A,VGS=0V,

--

365

--

ns

Reverse Recovery Charge

Qrr

dIF/dt=100A/µS(Note 2)

--

3.4

--

µC

MOSFET

Notes:

1.

L=30mH, I AS AS=5.0A, VDD=100V, RG=25Ω,starting TJ=25°C;

2. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 3. Essentially independent of operating temperature.


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SVF7N65T/F_Datasheet TYPICAL CHARACTERISTICS


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SVF7N65T/F_Datasheet TYPICAL CHARACTERISTICS(continued)


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SVF7N65T/F_Datasheet TYPICAL TEST CIRCUIT

GateChargeTestCircuit&Waveform

VGS

SameType asDUT

50KΩ

Qg

10V

VDS

200nF

12V

300nF

Qgs

Qgd

VGS DUT 3mA

Charge

ResistiveSwitchingTestCircuit&Waveform

RL

VDS

VDS 90%

VGS VDD RG DUT

10%

VGS 10V

td(on)

tr ton

td(off)

tf toff

UnclampedInductiveSwitchingTestCircuit&Waveform

E AS =

L

VDS

BVDSS 1 2 2 LI AS BVDSS - VDD

BVDSS ID

I AS

RG DUT 10V

ID(t)

VDD

VDS(t)

VDD tp

Time

tp


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SVF7N65T/F_Datasheet PACKAGE OUTLINE TO-220-3L

UNIT: mm

TO-220F-3L

UNIT: mm


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SVF7N65T/F_Datasheet Silan reserves the right to make changes to the information herein for the improvement of the design and

•

performance without further notice! Customers should obtain the latest relevant information before placing orders and should verify that such infor mation is complete and current. •

All semi con duc to r pr od uct s malf unc ti on or fail wit h so me pro babi lit y u nd er spec ial co ndi ti ons . When usi ng Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property.

•

Silan will supply the best possible product for customers!

ATTACHMENT Revision History Date

REV

2010.12.13

1.0

2011.02.15

1.1

Description

Page

Original Modify “ABSOLUTE MAXIMUM RATINGS” and “ELECTRICAL CHARACTERISTICS”


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2011.02.15 Page 8 of 8

datasheetSVF7N65T

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